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2 SC 5584

This document provides specifications for the 2SC5584 power transistor. It is a silicon NPN triple diffusion mesa transistor intended for use in horizontal deflection output applications. The document lists maximum ratings and electrical characteristics including breakdown voltages, current ratings, gain, saturation voltages, transition frequency and storage/fall times.

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Javier Longoni
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155 views

2 SC 5584

This document provides specifications for the 2SC5584 power transistor. It is a silicon NPN triple diffusion mesa transistor intended for use in horizontal deflection output applications. The document lists maximum ratings and electrical characteristics including breakdown voltages, current ratings, gain, saturation voltages, transition frequency and storage/fall times.

Uploaded by

Javier Longoni
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Power Transistors

2SC5584
Silicon NPN triple diffusion mesa type
Unit: mm

For horizontal deflection output


(10.0) (6.0) (2.0) (4.0)

20.00.5 3.30.2

5.00.3 (3.0)

I Features
High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO)
26.00.5

(3.0)

(1.5)

(1.5) 2.00.3 3.00.3 1.00.2 0.60.2 5.450.3 10.90.5 (1.5) 2.70.3

I Absolute Maximum Ratings TC = 25C


Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25C Ta = 25C Tj Tstg VEBO ICP IC IB PC Rating 1 500 1 500 600 7 30 20 8 150 3.5 150 55 to +150 C C Unit V V V V A A A W

20.00.5 (2.5) Solder Dip

1: Base 2: Collector 3: Emitter TOP-3L Package

Marking Symbol: C5584 Internal Connection


C B

Junction temperature Storage temperature

I Electrical Characteristics TC = 25C 3C


Parameter Collector cutoff current Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 1 000 V, IE = 0 VCB = 1 500 V, IE = 0 Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time VEB = 7 V, IC = 0 VCE = 5 V, IC = 10 A IC = 10 A, IB = 2.5 A IC = 10 A, IB = 2.5 A VCE = 10 V, IC = 0.1 A, f = 0.5 MHz IC = 10 A, Resistance loaded IB1 = 2.5 A, IB2 = 5.0 A 3 2.7 0.2 7 Min Typ Max 50 1 50 14 3 1.5 V V MHz s s Unit A mA A

(2.0)

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