Scribd
Upload
33 views1 page

2SD2045

This document provides specifications and characteristics for the 2SD2045 silicon NPN triple diffused planar transistor. The first section lists the transistor's maximum ratings for voltages, currents and temperatures. Subsequent sections provide its electrical characteristics like current and voltage values, gain and frequency response. Graphs show typical characteristics like saturation voltage, gain and frequency response at different currents and temperatures. Dimensions and a diagram of the transistor package are also given. The document concludes with safe operating area and power derating curves.

Uploaded by

Dmitry Davydov
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
33 views1 page

2SD2045

This document provides specifications and characteristics for the 2SD2045 silicon NPN triple diffused planar transistor. The first section lists the transistor's maximum ratings for voltages, currents and temperatures. Subsequent sections provide its electrical characteristics like current and voltage values, gain and frequency response. Graphs show typical characteristics like saturation voltage, gain and frequency response at different currents and temperatures. Dimensions and a diagram of the transistor package are also given. The document concludes with safe operating area and power derating curves.

Uploaded by

Dmitry Davydov
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

Darlington

sAbsolute maximum ratings


Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2045 120 120 6 6(Pulse10) 1 50(Tc=25C) 150 55 to +150

2SD2045
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=3mA IC=3A, IB=3mA VCE=12V, IE=1A VCB=10V, f=1MHz 2SD2045 10max 10max 120min 2000min 1.5max 2.0max 50typ 70typ V V
16.2

Equivalent circuit
B

(2.5k)(200) E

Silicon NPN Triple Diffused Planar Transistor


(Ta=25C) Unit V V V A A W C C

Application : Driver for Solenoid, Motor and General Purpose


(Ta=25C) Unit

External Dimensions FM100(TO3PF)


0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6

A
mA
23.00.3

9.50.2

a b

MHz pF

1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1

3.3

0.8

sTypical Switching Characteristics (Common Emitter)


VCC (V) 30 RL () 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 3 IB2 (mA) 3 ton (s) 0.5typ tstg (s) 5.5typ tf (s) 1.5typ

3.35

Weight : Approx 2.0g a. Type No. b. Lot No.

I C V CE Characteristics (Typical)
6
20mA

V CE ( sat ) I B Characteristics (Typical)


Collector-Emitter Saturation Voltage V C E (s a t) (V ) 3

I C V BE Temperature Characteristics (Typical)


(V C E =2V) 6

5m

2m

mA
0.7m A

5 Collector Current I C (A)

5 Collector Current I C (A)

0.5m

p)

Cas

25C

2A
1

C (

0.1

0.5

10

50

100

1 Base-Emittor Voltage V B E (V)

30C

125

(Case

(Cas

4A

e Te

eT

I C =8A

mp) Temp )

.4 m B= 0

em

3.0

Collector-Emitter Voltage V C E (V)

Base Current I B (mA)

h FE I C Characteristics (Typical)
(V C E =2V) 10000 5000 DC Curr ent Gain h F E

h FE I C Temperature Characteristics (Typical)


(V C E =2V) 10000 5000

j- a (C /W)

j-a t Characteristics
5

Typ
D C Cur r ent Gai n h F E

12
1000 500

1000 500

C 25 C 0 3

Transient Thermal Resistance

0.5

100 50 0.03 0.1 0.5 1 5 6

100 50 0.03 0.1 0.5 1 56

0.2

10 Time t(ms)

100

1000

Collector Current I C (A)

Collector Current I C (A)

f T I E Characteristics (Typical)
(V C E =12V) 120 20

Safe Operating Area (Single Pulse)


50

P c T a Derating

100 Cut -off Fre quen cy f T ( MH Z ) 5 Collector Cur rent I C (A) 80

M aximum Power Dissipa ti on P C ( W)

Typ

10
1m s

40
W ith

10 ms

DC

In

30

fin ite

60

1 0.5 Without Heatsink Natural Cooling 0.1

he at si

20

nk

40

20

10 Without Heatsink 0

0 0.05 0.1

0.5

5 6

0.05 3

10

50

100

200

25

50

75

100

125

150

Emitter Current I E (A)

Collector-Emitter Voltage V C E (V)

Ambient Temperature Ta(C)

143

You might also like