Abstract
Abstract
ABSTRACT
Transparent electronics is an emerging science and technology field focused on producing invisible electronic circuitry and opto-electronic devices. Applications include consumer electronics, new energy sources, and transportation; for example, automobile windshields could transmit visual information to the driver. Glass in almost any setting could also double as an electronic device, possibly improving security systems or offering transparent displays. In a similar vein, windows could be used to produce electrical power. Other civilian and military applications in this research field include real-time wearable displays. As for conventional Si/III V-based electronics, the basic device structure is based on semiconductor junctions and transistors. However, the device building block materials, the semiconductor, the electric contacts, and the dielectric/passivation layers, must now be transparent in the visible a true challenge! Therefore, the first scientific goal of this technology must be to discover, understand, and implement transparent high-performance electronic materials. The second goal is their implementation and evaluation in transistor and circuit structures. The third goal relates to achieving application-specific properties since transistor performance and materials property requirements vary, depending on the final product device specifications. Consequently, to enable this revolutionary technology requires bringing together expertise from various pure and applied sciences, including materials science, chemistry,physics, electrical/electronic/circuit engineering, and display science.
In order to produce a transparent-electronics-based system, appropriate materials must be selected, synthesized, processed, and integrated together in order to fabricate a variety of different types of devices. In turn, these devices must be chosen, designed, fabricated, and interconnected in order to construct circuits, each of which has to be designed, simulated, and built in such a way that they appropriately function when combined together with other circuit and ancillary non-circuit subsystems. Thus, this product flow path involves materials devices circuits systems, with each level of the flow more than likely involving multi -feedback iterations of selection, design, simulation, fabrication,integration, characterization, and optimization . From this perspective, devices constitute a second level of the product flow path. The multiplicity, performance, cost, manufacturability, and reliability of available device types will dictate the commercial product
space in which transparent electronics technology will be able to compete. Thus, an assessment of the device tool set available to transparent electronics is of fundamental interest, and is the central theme of this chapter . Passive, linear devices - resistors, capacitors, and inductors comprise the first topic discussed. Passive devices are usually not perceived to be as glamorous as active devices, but they can be enabling from a circuit system perspective,and they are also the simplest device types from an operational point-of-view. Together, these two factors provide the rationale for considering this topic initially. Next, two-terminal electronic devices - pn junctions, Schottky barriers,hetero junctions, and metal-insulator-semiconductor (MIS) capacitors constitute the second major topic. The motivation for this topical ordering is again associated with their relative operational complexity, rather than their utility. The third and final major topic addressed is transistors. This is the most important matter considered in this chapter. Most of this discussion focuses on TTF Ts,since they are perceived to be the most useful type of transistor for transparent electronics. Additionally, a very brief overview of alternative transistor types -static-induction transistors, vertical TFT s, hot electron transistors, and nano wire transistors - is included. This is motivated by recognizing the desirability of achieving higher operating frequencies than are likely obtainable using TTFT s with minimum gate lengths greater than ~2-10 m, a probable lower -limit dimensional constraint for many types of low-cost, large-area applications. Alternative transistors such as these offer possible routes for reaching higher operating frequencies, in the context of transparent electronics.