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13007

transistor para fuentes de 220v

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Javier Canaviri
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143 views7 pages

13007

transistor para fuentes de 220v

Uploaded by

Javier Canaviri
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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FJP13007 NPN Silicon Transistor

FJP13007
NPN Silicon Transistor High Voltage Switch Mode Application
High Speed Switching Suitable for Electronic Ballast and Switching Regulator

TO-220 2.Collector 3.Emitter

1.Base

Absolute Maximum Ratings


Symbol
VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current

Ta = 25C unless otherwise noted

Parameter

Value
700 400 9 8 16 4 80 150 -65 ~ 150

Units
V V V A A A W C C

Collector Dissipation (Ta = 25C) Junction Temperature Storage Temperature

2004 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FJP13007 Rev. C

FJP13007 NPN Silicon Transistor

Electrical Characteristics
Symbol
BVCEO IEBO hFE1 hFE2 VCE(sat)

TC = 25C unless otherwise noted

Parameter
Collector-Emitter Breakdown Voltage Emitter Cut-off Current DC Current Gain * Collector-Emitter Saturation Voltage

Conditions
IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCE = 10V, IC = 0.5A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50

Min.
400

Typ.

Max
1

Units
V mA

8 5

60 30 1 2 3 1.2 1.6 V V V V V MHz 110 1.6 3.0 0.7 pF s s s

VBE(sat) fT Cob tON tSTG tF

Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Storge Time Fall Time

* Pulse Test: PW 300s, Duty Cycle 2%

hFE Classification
Classification
hFE1

H1
15 ~ 28

H2
26 ~ 39

2 FJP13007 Rev. C

www.fairchildsemi.com

FJP13007 NPN Silicon Transistor

Typical Performance Characteristics


Figure 1. DC Current Gain
100

Figure 2. Saturation Voltage


VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10

VCE = 5V

I C = 3 IB

hFE, DC CURRENT GAIN

VBE(sat)

10

0.1

VCE(sat)

1 0.1

10

0.01 0.1

10

100

IC[A], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

Figure 3. Collector Output Capacitance


1000 1000

Figure 4. Turn On Time

Cob[pF], OUTPUT CAPACITANCE

tR, tD [ns], TURN ON TIME

100

tR

100

10

tD, VBE(off)=5V

VCC=125V IC=5IB
1 0.1 1 10 100 1000 10 0.1 1 10

VCB[V], COLLECTOR-BASE VOLTAGE

IC[A], COLLECTOR CURRENT

Figure 5. Turn Off Time


10000

Figure 6. Forward Biased Safe Operating Area


100

tSTG, tF [ns], TURN OFF TIME

VCC=125V IC=5IB

IC[A], COLLECTOR CURRENT

tSTG
1000

10s
10

DC

1ms

100s

100

tF

0.1

10 0.1

10

0.01 1 10 100 1000

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

3 FJP13007 Rev. C

www.fairchildsemi.com

FJP13007 NPN Silicon Transistor

Typical Performance Characteristics

(Continued)

Figure 7. Reverse Biased Safe Operating Area


100

Figure 8. Power Derating


100 90

IC[A], COLLECTOR CURRENT

10

PC[W], POWER DISSIPATION

Vcc=50V, IB1=1A, IB2 = -1A L = 1mH

80 70 60 50 40 30 20 10

0.1

0.01 10 100 1000 10000

0 0 25 50
o

75

100

125

150

175

VCE[V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

4 FJP13007 Rev. C

www.fairchildsemi.com

FJP13007 NPN Silicon Transistor

Mechanical Dimensions

TO-220
9.90 0.20
1.30 0.10 2.80 0.10

4.50 0.20

(8.70) 3.60 0.10

(1.70)

1.30 0.05

+0.10

9.20 0.20

(1.46)

13.08 0.20

(1.00)

(3.00)

15.90 0.20

1.27 0.10

1.52 0.10

0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]

10.08 0.30

18.95MAX.

(3.70)

(45 )

0.50 0.05

+0.10

2.40 0.20

10.00 0.20

Dimensions in Millimeters

5 FJP13007 Rev. C

www.fairchildsemi.com

FJP13007 NPN Silicon Transistor

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx
ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E2CMOS EnSigna FACT FACT Quiet Series

FAST FASTr FPS FRFET GlobalOptoisolator GTO HiSeC I2C i-Lo ImpliedDisconnect

Across the board. Around the world. The Power Franchise Programmable Active Droop

ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP

Power247 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SerDes SILENT SWITCHER SMART START SPM

Stealth SuperFET SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET UniFET VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY


FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms


Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

Rev. I14

6 FJP13007 Rev. C

www.fairchildsemi.com

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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