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Essay Question

This document contains essay questions for a semiconductor devices course. It includes three sections: Section A asks students to calculate voltage gains for various stages of multistage amplifiers. Students are asked to draw equivalent circuits and calculate gains for a two-stage RC coupled amplifier and a two-stage direct coupled amplifier. Section B asks students to compare and contrast n-channel and p-channel JFETs, n-channel and p-channel enhancement MOSFETs, and n-channel and p-channel depletion MOSFETs in terms of their physical structures, symbols, characteristics, and basic operation circuits. Section C asks students to draw the physical structures and schematic symbols of a silicon controlled rect

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90 views

Essay Question

This document contains essay questions for a semiconductor devices course. It includes three sections: Section A asks students to calculate voltage gains for various stages of multistage amplifiers. Students are asked to draw equivalent circuits and calculate gains for a two-stage RC coupled amplifier and a two-stage direct coupled amplifier. Section B asks students to compare and contrast n-channel and p-channel JFETs, n-channel and p-channel enhancement MOSFETs, and n-channel and p-channel depletion MOSFETs in terms of their physical structures, symbols, characteristics, and basic operation circuits. Section C asks students to draw the physical structures and schematic symbols of a silicon controlled rect

Uploaded by

AnnaIzzat
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
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Department of Electrical Engineering

EE201-SEMICONDUCTOR DEVICES ESSAY QUESTIONS


NAME REGISTRATION NO. PROGRAMME LECTURERS NAME DATE REMINDER: Cheating or plagiarism will not be tolerated. All parties involved in cheating or plagiarism will be given zero mark on the specified assessment.

Learning Outcome

CLO1 B1a,b,c(6) B2a,b,c(6) B3a,b,c(6) C1a(6) C2(5)

CLO2 A1(10) A2(15) B1d(4) B2d(4) B3d(4) C1b(4) 41

CLO3

CLO4

CLO5

Score

29

PREPARED BY : Course Lecturer

APPROVED BY : Course Coordinator

Date :

Date :

A. ESSAY QUESTION - MULTITSTAGES (25 marks) Instruction: This section consists of TWO essay questions. Answer all questions

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1. For a two stage RC coupled amplifier shown in Figure 1.1, calculate the approximate value of:a) voltage gain for the first stage (CLO2, 3marks) b) voltage gain for the second stage (CLO2, 3marks) c) voltage gain for the amplifier (CLO2, 3marks) d) voltage gain for the amplifier in dB (CLO2, 1marks) ( Please draw and label ac equivalent an circuit in your answer, neglect VBE and 25mV assume re = ( ) and = 50 IE
0.75M 4K 0.75M 4K 15V

16K

2. For a two stage Direct coupled amplifier shown in Figure 1.2, calculate the approximate value of:a) IE1, IE2, VCE1 and VCE 2 ( CLO2, 8 marks) b) c) d) e) voltage gain for the first stage voltage gain for the second stage voltage gain for the amplifier voltage gain for the amplifier in dB ( CLO2, 2 marks) ( CLO2, 2 marks) ( CLO2, 2 marks) ( CLO2, 1 marks)

( Please draw and label ac equivalent an circuit in your answer, neglect VBE and 25mV assume re = ( ) IE
6K 8K 180K 6K 15V

20K

1K

1K

B. ESSAY QUESTION-FET (30 marks)

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1. Draw the differences between n-channel JFET and p-channel JFET with regard to: a) Physical structure (CLO1, 2marks) b) Schematic symbols (CLO1, 2marks) c) I-V characteristics (CLO1, 2marks) d) Basic operation circuit (CLO2, 4marks) 2. Draw the differences between n-channel E-MOSFET and p-channel EMOSFET with regard to: Physical structure (CLO1, 2marks) Schematic symbols (CLO1, 2marks) I-V characteristics (CLO1, 2marks) Basic operation circuit (CLO2, 4marks) 3. Draw the differences between n-channel D-MOSFET and p-channel DMOSFET with regard to: a) Physical structure (CLO1, 2marks) b) Schematic symbols (CLO1, 2marks) c) I-V characteristics (CLO1, 2marks) d) Basic operation circuit (CLO2, 4marks)

a) b) c) d)

C. ESSAY QUESTION-OTHERS SEMICONDUCTOR DEVICES (15 marks)

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1. From the others electronic devices below a) Draw the physical structure and schematic symbols for i. Silicon Controlled Rectifier (SCR) ii. Uni-junction Transistor (UJT) iii.DIAC (CLO1, 6.1.1, 6 marks)
b)

Explain the application of these devices. i. Silicon Controlled Rectifier (SCR) ii. DIAC (CLO2, 6.1.3, 4 marks)

2. Draw and label completely IV characteristic curve for SCR. (CLO1, 6.1.2, 5 marks)

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