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Tic 108

The document provides specifications for a family of P-N-P-N silicon reverse-blocking thyristor semiconductor products (TIC108A-S). It details their electrical characteristics including continuous current ratings from 100V to 800V, gate trigger currents from 0.2 to 1.2 mA, and thermal characteristics such as junction to case thermal resistance of ≤ 3.5 °C/W. Mechanical data shows the products use a TO-220 package with pin 1 for cathode, pin 2 for anode, and pin 3 for gate.

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Daniela Cardenas Lubo
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© Attribution Non-Commercial (BY-NC)
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Download as PDF, TXT or read online on Scribd
152 views

Tic 108

The document provides specifications for a family of P-N-P-N silicon reverse-blocking thyristor semiconductor products (TIC108A-S). It details their electrical characteristics including continuous current ratings from 100V to 800V, gate trigger currents from 0.2 to 1.2 mA, and thermal characteristics such as junction to case thermal resistance of ≤ 3.5 °C/W. Mechanical data shows the products use a TO-220 package with pin 1 for cathode, pin 2 for anode, and pin 3 for gate.

Uploaded by

Daniela Cardenas Lubo
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PDF, TXT or read online on Scribd
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SEMICONDUCTORS

TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M, TIC108N, TIC108S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
5 A Continuous On-State Current 20 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 1 mA Compliance to ROHS

ABSOLUTE MAXIMUM RATINGS Symbol


VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL

Ratings
Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 80C case temperature ( see note2) Average on-state current (180 conduction angle) at(or below) 80C case temperature (see Note3) Surge on-state current (see Note4) Peak positive gate current (pulse width 300 s) Peak power dissipation (pulse width 300 s) Average gate power dissipation (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds

Value A B C D E M S N

Unit
V V A A A A W W C C C

100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 5 3.2 20 0.2 1.3 0.3 -40 to +110 -40 to +125 230

02/10/2012

COMSET SEMICONDUCTORS

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SEMICONDUCTORS

TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M, TIC108N, TIC108S


THERMAL CHARACTERISTICS Symbol
tgt tq RJC RJA

Ratings
Gate-controlled VAA = 30 V, RL = 6 Turn-on time RGK(eff) = 5 k, Vin = 50 V Circuit-communicated VAA = 30 V, RL = 6 Turn-off time IRM 8 A Junction to case thermal resistance Junction to free air thermal resistance

Value
2.9

Unit

s 13.3 3.5 62.5 C/W

ELECTRICAL CHARACTERISTICS
TC=25C unless otherwise noted

Symbol
IDRM IRRM IGT

Ratings
Repetitive peak off-state current Repetitive peak reverse current Gate trigger current

Test Condition(s)
VD = Rated VDRM RGK = 1 k, TC = 110C VR = Rated VRRM, IG = 0 TC = 110C VAA = 6 V, RL = 100 tp(g) 20s VAA = 6 V, RL = 100 RGK = 1 k, tp(g) 20s TC = -40C VAA = 6 V, RL = 100 RGK = 1 k, tp(g) 20s VAA = 6 V, RL = 100 RGK = 1 k, tp(g) 20s TC = 110C VAA = 6 V, RGK = 1 k initiating IT = 20 mA VAA = 6 V, RGK = 1 k initiating IT = 20 mA TC = -40C ITM = 5A (see Note6) VD = Rated VD, RGK = 1 k TC = 110C

Min
0.2 0.4 0.2 -

Typ
0.6 80

Max
400 1 200 1.2 1 10

Unit
A mA A

VGT

Gate trigger voltage

IH

Holding current

mA 15 1.7 V V/s

VTM dv/dt

Peak on-state voltage Critical rate of rise of off-state voltage

02/10/2012

COMSET SEMICONDUCTORS

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SEMICONDUCTORS

TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M, TIC108N, TIC108S


Notes: 1. 2. 3. 4. 5. These values apply when the gate-cathode resistance RGK = 1k These values apply for continuous dc operation with resistive load. Above 80C derate linearly to zero at 110C. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80C derate linearly to zero at 110C. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. This value applies for a maximum averaging time of 20 ms.

6.

This parameters must be measured using pulse techniques, tW = 300s, duty cycle 2 %, voltagesensing contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch) from de device body.

MECHANICAL DATA CASE TO-220

02/10/2012

COMSET SEMICONDUCTORS

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SEMICONDUCTORS

TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M, TIC108N, TIC108S


PINNING

Pin 1 : Pin 2 : Pin 3 :

kathode Anode Gate

Revised September 2012



Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors products are not authorized for use as critical components in life support devices or systems.

www.comsetsemi.com
02/10/2012 COMSET SEMICONDUCTORS

[email protected]
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