Duration 2 weeks: Lab Sessions 1 and Lab Session 2 Experiment # 1: Switching Characteristics of Power Devices:

Objective:
To study the switching characteristics, of power diodes and power mosfets and understand the parameters involved in switching times and switching power losses.

Equipment and Components:

Background:
Power semiconductor diode is the power level counter part of the low power signal diodes with which most of us have some degree of familiarity. These power devices, however, are required to carry up to several KA of current under forward bias condition and block up to several KV under reverse biased condition. These extreme requirements call for important structural changes in a power diode which significantly affect their operating characteristics. These structural modifications are generic in the sense that the same basic modifications are applied to all other low power semiconductor devices (all of which have one or more p-n junctions) to scale up their power capabilities. It is, therefore, important to understand the nature and implication of these modifications in relation to the simplest of the power devices, i.e., a power semiconductor diode. A power diode is a two terminal p-n junction device and a p-n junction normally formed by allowing diffusion and epitaxial growth structure of a power diode and symbol are shown in figure below.

High power diodes are silicon-rectifiers that can operate at high junction temperatures. Power diodes have larger Power, Voltage and Current handling capabilities than ordinary signal diodes. In addition, the switching frequencies of power diodes are low as compared to signal diodes. The voltage current characteristics of power diodes is shown in figure below.

When the anode potential is positive with respect to cathode, the diode is said to be forward biased, the diode conducts and behaves essentially as a closed switch. A conducting diode has a relatively small forward voltage drop across it and the magnitude of the drop would depend on the manufacturing process and temperature. When cathode potential is positive with respect to anode, the diode is said to be reversed. It behaves essentially as an open circuit. Under reverse biased condition, a small reverse current is known as leakage current in the range of A or mA flows and leakage current increases slowly in magnitude with the reverse voltage until the avalanche voltage is reached .The forward voltage drop when it conducts current, is in the range of 0.8 to 1V.Diodes with ratings as high as 4000V and 2000A are available. Following the end of forward conduction in diode, reverse current flows for a short time. The device doesnt attain its full blocking capability until the reverse current ceases. The reverse current flows in the interval called rectifier recovery time. During this time, charge carriers stored in the diode at the end of forward conduction are removed. The recovery time is in range of a few s(1-5) s in a conventional diode to several hundred nanoseconds in fast recovery diodes. This recovery time is of great significance in high frequency operation. The recovery characteristics of conventional and fast recovery diodes are shown in figure below.

Switching Characteristics of Power Diodes Power Diodes take finite time to make transition from reverse bias to forward bias condition (switch ON) and vice versa (switch OFF). Behavior of the diode current and voltage during these switching periods are important due to the following reasons. Severe over voltage / over current may be caused by a diode switching at different points in the circuit using the diode. Voltage and current exist simultaneously during switching operation of a diode. Therefore, every switching of the diode is associated with some energy loss. At high switching frequency this may contribute significantly to the overall power loss in the diode. Turn-ON behavior of a power Diode: Diodes are often used in circuits with di/dt limiting inductors. The rate of rise of the forward current through the diode during Turn ON has significant effect on the forward voltage drop characteristics. A typical turn on transient is shown in Fig. 2.12.

It is observed that the forward diode voltage during turn ON may transiently reach a significantly higher value V fr compared to the steady slate voltage drop at the steady current IF. In some power converter circuits (e.g voltage source inverter) where a free wheeling diode is used across an asymmetrical blocking power switch (i.e GTO) this transient over voltage may be high enough to destroy the main power switch. Vfr (called forward recovery voltage) is given as a function of the forward diF/dt in the manufacturers data sheet. Typical values lie within the range of 10-30V. Forward recovery time (tfr) is typically within 10 us. This transition is generally not observable for models used in simulation softwares. Observed Turn OFF behavior of a Power Diode: Following figure shows a typical turn off behavior of a power diode assuming controlled rate of decrease of the forward current.

Salient features of these characteristics are: The diode current does not stop at zero, instead it grows in the negative direction to Irr called peak reverse recovery current which can be comparable to IF. In many power electronic circuits (e.g. choppers, inverters) this reverse current flows through the main power switch in addition to the load current. Therefore, this reverse recovery current has to be accounted for while selecting the main switch. Voltage drop across the diode does not change appreciably from its steady state value till the diode current reaches reverse recovery level. In many power electric circuits this may create an effective short circuit across the supply, current being limited only by the stray wiring inductance. Also in high frequency switching circuits (e.g, SMPS) if the time period t4 is comparable to switching cycle qualitative modification to the circuit behavior is possible. Towards the end of the reverse recovery period if the reverse current falls too sharply, (low value of S), stray circuit inductance may cause dangerous over voltage (Vrr) across the device. RC snubber may be used for protection. During the period t5 large current and voltage exist simultaneously in the device. At high switching frequency this may result in considerable increase in the total power loss.

Power Mosfets:
The structure of Power Mosfets is different than the small signal counterpart. Many physical devices in parallel form a Power Mosfet. Switching characteristics can be understood by considering effects of Cgs, Cgd and rDS of the transistor in addition to normal working of the device. Following figures show the switching graphically for a step change in VGG:

Turn-off characteristics are as shown below:

These will be explored in this lab exercise.

Simulation

The above circuit is to be used to study the switching characteristics of MOSFET and Power Diode. You may simulate the circuit in simulation software of your choice. Values of inductor and switching voltage VGG is to be chosen appropriately for the circuit behavior to be observed in steady state (after the transients have settled). Choose IFR640 (or similar transistor) and a power diode with small rON (~1m). Once the waveforms for the circuit

Exercises:
1. Obtain a plot of VD and ID on the same screen to observe the behavior. It may not be possible for you to observe the voltage overshoot during turn-on. Extra credit (+50%) for the first group who can use better diode model to observe voltage overshoot. a. Measure the value of t0, t1, t2 and Max VD during forward recovery. b. Measure the value of t3, t4, t5, IRR, VRR and QRR during reverse recovery. c. Estimate the value of rON for the diode. d. Calculate the switching losses for diode during state transitions. Obtain the plot of VGS, VDS and ID with reference to VGG when the circuit has attained steady state. a. Measure don, tri, and tfv in the turn-on switching characteristics. b. Measure VGS (th) and VGS (Io ) . c. Using the following Equation, estimate the average switching power loss during the turn-on.

2.

d. e.

Measure d(off ) trv and tfi in the turn-on switching characteristics. Using the following equation, calculate the average switching power loss during the turn-on.