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Classification of Defects in Solids: Planar Defects

This document discusses different types of planar and bulk defects in materials. It describes planar defects such as stacking faults, grain boundaries, twin boundaries and interfaces. It also discusses bulk defects including precipitates, vacancy agglomeration, and cracks/pits/grooves. Key planar defects include stacking faults, tilt boundaries, twist boundaries and phase boundaries. Dissociation of a perfect dislocation can create a stacking fault between partial dislocations. Bulk defects incorporate precipitates, D-defects and cracks/voids.

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Bala Chandar
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29 views

Classification of Defects in Solids: Planar Defects

This document discusses different types of planar and bulk defects in materials. It describes planar defects such as stacking faults, grain boundaries, twin boundaries and interfaces. It also discusses bulk defects including precipitates, vacancy agglomeration, and cracks/pits/grooves. Key planar defects include stacking faults, tilt boundaries, twist boundaries and phase boundaries. Dissociation of a perfect dislocation can create a stacking fault between partial dislocations. Bulk defects incorporate precipitates, D-defects and cracks/voids.

Uploaded by

Bala Chandar
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PDF, TXT or read online on Scribd
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MSE 310 Electrical Prop of Matls Knowlton

Planar Defects in Materials

Classification of Defects in Solids: Planar defects: Planar defects:


Stacking faults
o {311} defects in Si o Inversion domain boundaries o Antiphase boundaries (e.g., super dislocations): analogous to partials but in an ordered material (GaN)

Interfaces Grain boundaries


o o o o Phase boundaries Tilt boundaries Twist boundaries Twin boundaries

MSE 310 Electrical Prop of Matls Knowlton

Planar Defects in Materials

Comparison of Packing of Atoms in the FCC & HCP Structures:

Blakemore, Solid State Physics 2nd Ed (Cambridge, 1985)

MSE 310 Electrical Prop of Matls Knowlton

Planar Defects in Materials

Comparison of Packing of Atoms in the FCC Structures:


Stacking sequence in FCC Crystals for (111) planes: ABCABC

Plane A Or A sites

Plane B Or B sites

Plane C Or C sites

MSE 310 Electrical Prop of Matls Knowlton

Dislocations in Materials

Mentioned earlier: Propagation of a dislocation that leaves the crystal unchanged in its atomic arrangement is referred to as a perfect dislocation. Example: b for perfect dislocation in FCC lattice:
b = ao/2 [110]

If the Elastic Strain Energy around a dislocation is large enough, the dislocation may dissociate into two dislocations whose b's are smaller. Driving Force: Reducing strain energy This will occur if:
2 b12 > b2 + b32

Franks rule:

The "smaller" dislocations are called Partial Dislocations. The dissociation of a perfect dislocation into partial dislocations will create a planar defect between the two partial dislocations referred to as a Stacking Fault (SF). Stacking Fault: discontinuity in the stacking sequence. The distance between two partial dislocation represents a balance between the action of two forces:
The stress fields of the partials cause mutual repulsion. The energy of the SF that stretches between them causes attraction.

MSE 310 Electrical Prop of Matls Knowlton

Dislocations in Materials

Partial Dislocations:
Dissociation of a perfect dislocation into Partial Dislocations and the creation of a Stacking Fault (SF) is shown below:

Stacking sequence in FCC Crystals for (111) planes: Unfaulted: ABCABC Faulted: ABCA/CABC Or Faulted: ABCAB/ABC

I think Hull & Bacon?

MSE 310 Electrical Prop of Matls Knowlton

Dislocations in Materials

Partial Dislocations:
Stacking Sites in {111} planes of a FCC crystal:
Stacking sequence in FCC Crystals for (111) planes: Unfaulted: ABCABC Intrinsic Stacking Fault: ABCA/CABC Exstrinsic Stacking Faulted: ABCAB/ABC

Plane B Or B sites

Plane C Or C sites

Plane B Or B sites

Partial dislocation

Faulted Section

Partial dislocation

=b

Plane C Or C sites
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MSE 310 Electrical Prop of Matls Knowlton

Planar Defects in Materials

Planar defects:
Stacking faults
o {311} defects in Si
Rod-like defect along <110> direction Consists of interstitials precipitating on {311} plans Deposits as a single monolayer of 5-7 member hexagonal rings of Si. This atomic arrangement provides a way to insert planes of I w/o dangling bonds giving rise to a very stable defect.

Eaglesham, Stolk, Gossmann & Poate, APL, 65, (1994) 2305


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MSE 310 Electrical Prop of Matls Knowlton

Planar Defects in Materials

Planar defects:
Grain boundaries:
o High angle o Low angle o Phase boundary:
two phases rather than one in a polycrystalline material.

W. McCallister, 5th Ed

MSE 310 Electrical Prop of Matls Knowlton

Planar Defects in Materials

Planar defects:
Tilt boundary is a special type of small angle grain boundary:
o Boundary is defined by an array of edge dislocations that are perpendicular to the angle of misorientation, .

Twist boundary is another special type of small angle grain boundary


o Boundary is defined by an array of screw dislocations that are parallel to the angle of misorientation, .

W. McCallister, 5th Ed

MSE 310 Electrical Prop of Matls Knowlton

Planar Defects in Materials

Planar defects:
Twin boundary:
o Special type of grain boundary o It is defined by symmetry across the boundary
Mirror plane

o Region between boundary is call a twin. o They are created by:


Applied mechanical shear forces Thermal annealing following plastic deformation

W. McCallister, 5th Ed

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MSE 310 Electrical Prop of Matls Knowlton

Bulk Defects in Materials

Bulk/Volume defects:
Precipitates Vacancy agglomeration (see Shimura, S/C Silicon Crystal Technology, p.57, fig. 3.29b)
o D-defects in Si

Cracks, grooves, pits

D-defects known to cause gate oxide degradation D-defects created during crystal growth
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MSE 310 Electrical Prop of Matls Knowlton

Bulk Defects in Materials

Bulk/Volume defects:
Cracks Pits Grooves

SEM of MOCVD GaN


Work performed while at HP Labs

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