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Optical Drivers

This document summarizes key optical drivers and detectors used in fiber optic systems. It discusses light emitting diodes (LEDs) and laser diodes, how they operate, their characteristics and common packaging. It also covers photodiodes, avalanche photodiodes and optical amplifiers used as optical detectors to convert received light signals to electrical signals. The document provides details on their operation, performance parameters and typical applications in fiber optic systems.

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Abdirihman
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66 views

Optical Drivers

This document summarizes key optical drivers and detectors used in fiber optic systems. It discusses light emitting diodes (LEDs) and laser diodes, how they operate, their characteristics and common packaging. It also covers photodiodes, avalanche photodiodes and optical amplifiers used as optical detectors to convert received light signals to electrical signals. The document provides details on their operation, performance parameters and typical applications in fiber optic systems.

Uploaded by

Abdirihman
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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OPTICAL DRIVERS AND DETECTORS

IDC

Light sources
G

Characteristics required
Effective coupling to fibres down to 8.5 microns diameter Easily modulated with linear characteristics igh output power igh reliability !mall si"e and weight #ow cost

IDC

#ight emitting diodes $#EDs%


&ade from p' and n'type semiconductor substrates &ost common materials
( )allium aluminium arsenide $)a*l*s% for 8++ to ,++ nm wavelengths ( )allium arsenide $)a*s% for ,-+ nm ( )allium arsenide phosphorous $)a*s.% for //+ nm $red for plastic fibres% ( Indium gallium arsenide phosphide $In)a*s.% for 0-++ and 055+ nm

IDC

. ' type substrate


( &ore protons than electrons ' holes ( *pply 1ve voltage

2 ' type substrate


( &ore electrons than protons ( *pply 've voltage

Electrons and holes flow toward the 3unction and combine4 emitting photons 5orbidden bandgap determines the energy of the emitted photon
IDC

Basic LED operation

#ight Emission

p ' region

6ias 7oltage

'

'1 '

n ' region

IDC

'1 '
8ecombination

1
9unction

Bandgap determines photon energy emission

Energy $e7%

'

Conduction 6and $5ree Electrons%

6andgap $w%

hf *mount of Energy released when electron drops to valence band and recombination occurs

IDC

7alence 6and 1 $6ound Electrons ' 5ree oles%

'

#ED geometry
!tandard #EDs emit light in all directions 5ibre #EDs must emit light in a narrower confined beam :ypes
( 6urrus
G

* hole is etched into the substrate for fibre ;ses a very thin active region to confine the light

( Edge emitting diodes


G

IDC

Edge emitting LED


-++ m &etal

. ' 8egion 5+ m *ctive #ayer n ' 8egion $substrate% !i<2 Insulating #ayer &etal 0++
IDC

#ight Emission

&etal !tripe Confines Charge Carriers #aterally

<perating characteristics
<utput power
( 0 m= ma>. Down to several =

.ower consumption
( ?+ to 0++ m*4 0.? to 0.8 74 up to 08+ m=

!pectral widths
( - d6 optical power bandwidth ( @+ nm at 85+ nm4 8+ nm at 0-++ nm ( Increased spectral width causes increased dispersion

<perating lifetime
IDC

( =hen output power has dropped by - d6 ( A 00 years


Cont.

DIODE AND LASER CHARACTERISTICS

IDC

&odulation
( &ostly digital ' $#ED turned on and off% ( *nalogue possible $requires forward DC bias%

:emperature effects
( <perating range '/5 to 0?5 degrees C ( <utput power decreases with temperature +.+0? d6 B CC

IDC

Practica LED pac!ages


5ibre a% #E2! #ED :<08 &etal Cap #E2! coupling $for large fibres A0+++ microns%

eader

5ibre :ransparent =indow &icrolens #ED


IDC

b%

&icrolensed #ED $5+ micron fibres%

&etal Cap

:<08

eader

Diode Packaging

IDC

Integrated Connectors

IDC

ANALOG AND DIGITAL DIODE CONTROLS

IDC

Laser diodes
#aser Dlight amplification by stimulated emission of radiationE G <perate on similar principles to edge #EDs. G * resonant optical cavity
G

8eflective ends Dc biased .hotons striFe electrons and stimulate further photon emission #ight amplified and escapes as laser beam
IDC

Laser diode operation

IDC

<perating characteristics
<utput power
( 0m= to several hundred m=

.ower consumption
( -+ to ?5+ m*4 0.? to ? 74 -+ to 5++ m=

!pectral width
( 0 nm at 85+nm4 - nm at 0-++nm

#ifetimes
( 00 years at ?? degrees C ( 0 year at G+ degrees C
IDC

&odulation
( &ostly digital
G

!witched onBoff close to threshold *bove threshold current

( *nalogue possible
G

:emperature effects
( :hreshold current increases with temperature ' 0.5 H per degree C ( <utput power decreases as temperature increases

IDC

Laser diode po"er # current # temperature cur$es

IDC

VCSEL
7ertical Cavity !urface Emitting #aser G Cheap laser diode G #ess energy required for laser operation G Emits narrow4 more circular beam G <perate at 85+ and 0-++ nm G !peeds up to 0+ )bps
G
IDC

VCSEL Chip

IDC

ANALOG AND DIGITAL LASER CONTROL CIRCUITS

IDC

Laser diode pac!age


Insulation Contact =ire #aser Diode Circuit Connection

5ibre .igtail

)rooved 6locF
IDC

:hreaded )round :erminal

Cap

Laser diode transmitter modu e


.hotodetector

#aser Diode

Diode :erminal

)rooved 6locF

5ibre
IDC

Laser

od!"e

IDC

Laser sa%ety &


*ll laser devices should be considered ha"ardous to the human eye. Under no circumstances look directly into the laser path! G :he 0-++ and 055+ nm wavelengths are invisible to the human eye but will burn the retina.
G

IDC

Optica detectors
G

Converts photon light energy to electrical energy

G G
IDC

&ust be very low inherent noise device .rovide amplification of low level signals

.in photodiodes
;se reverse process of the #ED Common response times of +.5 to 0+ ns $? ) " to 0++ & "%. !pecial devices down to 0+ ps $0++ ) "%

IDC

Pin photodiode
.hoton

'

'
7 .1

1
I Intrinsic 8egion n1 8# 7<;:

IDC

*valanche photodiodes
igh reverse bias voltages cause an increasing avalanche of charges in the semiconductor areas.
( Increased sensitivity to incoming light ( Internal amplification ( :wice the response time for standard devices

*dvantages

Disadvantages
( &ore comple> ( Increase costs ( #ess reliable
IDC

;sed for low signal to noise requirements and long distance telecommunications.

A$a anche photodiodes

IDC

IDC

APD Recei#er

IDC

*mplifiers
8equired because the very low levels of light produce tiny currents in the detectors
( * light signal of 0 = will produce /++ n* in a pin diode ( need to amplify..

Can be 5E:
( )reater sensitivity at lower data rates I lowest noise

<r bipolar
( 5or high data rates

IDC

Optical amplifiers
*mplification without conversion to electrical energy ;se stimulated emission principle for single photon pass Doped fibres
( Erbium for 055+ nm ( .raseodymium for 0-++ nm

!emiconductor lasers
( .roblems matching wide diameter fibre cores to small laser areas ( *ctive layer narrow ' , m to 0 m

IDC

Doped 'i(re Amp i%ier


.ump laser ,8+nm Erbium doped fibre 8aises energy of Erbium atoms

Incident #ight 05@+nm


IDC

!timulates Emission at 05@+nm

*mplified <utput 05@+nm

IDC

ED$A

IDC

Semiconductor Laser Amp i%ier


!emiconductor #aser *mplifier Core Core

I2.;: 5I68E Incident light beam *ctive #ayer


IDC

<;:.;: 5I68E <utput light beam

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