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(B) Zener Diode Characteristics: S.No Particulars Specification Range Quantity

The document describes an experiment to plot the volt-ampere characteristics of a Zener diode and determine its breakdown voltage. Components used include a Zener diode, resistor, power supply, voltmeter, ammeter and breadboard. Forward bias characteristics are measured by varying voltage and recording current. Reverse bias characteristics are measured by varying reverse voltage and recording reverse current. Static and dynamic resistances are calculated in forward and reverse bias before and after breakdown. The experiment verifies the V-I characteristics of the Zener diode and determines values like static and dynamic resistances.

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Brandon Johnson
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124 views

(B) Zener Diode Characteristics: S.No Particulars Specification Range Quantity

The document describes an experiment to plot the volt-ampere characteristics of a Zener diode and determine its breakdown voltage. Components used include a Zener diode, resistor, power supply, voltmeter, ammeter and breadboard. Forward bias characteristics are measured by varying voltage and recording current. Reverse bias characteristics are measured by varying reverse voltage and recording reverse current. Static and dynamic resistances are calculated in forward and reverse bias before and after breakdown. The experiment verifies the V-I characteristics of the Zener diode and determines values like static and dynamic resistances.

Uploaded by

Brandon Johnson
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
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1.

(B) ZENER DIODE CHARACTERISTICS


AIM :
1. To plot Volt-Ampere characteristics of Zener diode.
2. To find Zener break down voltage in reverse biased condition.
3. To calculate static and dnamic resistances of the Zener diode in both forward and reverse
biased conditions !before" after break down voltages#.
COMPONENTS REQUIRED:
S.NO PARTICULARS SPECIFICATION RANGE QUANTITY
1
Zener diode $Z %.& - 1
2
'esistor - 1(( ) 1
3
'egulated *ower +uppl - !(-3(# V 1
,
Voltmeter - !(-1# V 1
% Ammeter
- !(-1((# mA
!(-%((# -A
1
1
&
.read .oard - - 1
/
0onnecting wires - - 1eeded
FORMULA USED:
+tatic forward 'esistance 'dc 2 Vf 3 4f )
5namic forward 'esistance rac 2 6Vf364f )
+tatic 'everse 'esistance 'dc 2 Vr3 4r )
5namic 'everse 'esistance rac 2 6Vr364r )
THEORY:
An ideal *-1 7unction diode does not conduct in reverse biased condition. A 8ener diode
conducts e9cellentl even in reverse biased condition. These diodes operate at a precise value of voltage
called break down voltage. A 8ener diode when forward biased behaves like an ordinar *-1
:unction diode. A 8ener diode when reverse biased can either undergo avalanche break down or 8ener
break down.
Avalanche break down;- 4f both p-side and n-side of the diode are lightl doped" depletion
region at the :unction widens. Application of a ver large electric field at the :unction ma rupture
covalent bonding between electrons. +uch rupture leads to the generation of a large number of
charge carriers resulting in avalanche multiplication.
Zener break down;- 4f both p-side and n-side of the diode are heavil doped" depletion region
at the :unction reduces. Application of even a small voltage at the :unction ruptures covalent
bonding and generates large number of charge carriers. +uch sudden increase in the number of
charge carriers results in 8ener mechanism.
TABULATION:
FORWARD CHARACTERISTICS REVERSE CHARACTERISTICS
VOLTAGE (V) CURRENT (mA) VOLTAGE (V) CURRENT (A)
PROCEDURE:
F!"#!$ B%#&'$ C($%)%(:
1. 0onnect the circuit as shown in fig.
2. Var V8f graduall and note down the corresponding readings of 48f.
3 +tep +i8e is not fi9ed because of non linear curve and var the <- a9is variable !i.e. if output
variation is more" decrease input step si8e and vice versa#.
,. Tabulate different forward currents obtained for different forward voltages.
R'*'!&' B%#&'$ +($%)%(:
1. 0onnect the circuit as shown in fig.
2. Var V8r graduall and note down the corresponding readings of 48r.
3. +tep +i8e is not fi9ed because of non linear curve and var the <- a9is variable !i.e .if output
variation is more" decrease input step si8e and vice versa#.
,. Tabulate different reverse currents obtained for different reverse voltages.
RESULT:

Thus the V-4 characteristics of the Zener 5iode is plotted and verified.
+tatic forward 'esistance 2
5namic forward 2
+tatic 'everse 'esistance 2
5namic 'everse 2
CIRCUIT DIAGRAMS:
FORWARD BIAS:,
REVERSE BIAS:,
MODEL GRAPH:
R'#&(%(- Q.'&)%(& :,
FZ 5.1
(/,0/) V
1K
A K
A
(/,1) V
V
(/,1//)mA
(/,1//)2A
A
3 A
(/,0/) V
13
FZ 1.1
V
(/,1/) V
1. =hat is a 8ener diode> ?ow it differs from an ordinar diode>
2. @9plain the concept of 8ener breakdown>
3. =hat is avalanche breakdown>
,. =hat tpe of biasing must be used when a 8ener diode is used as a regulator>
%. 0urrent in a 1= A 1(V 8ener diode must be limited to a ma9imum of what value>
&. =hat are the advantages of 8ener diode>
/. +tate reason wh an ordinar diode suffers avalanche breakdown rather than 8ener
breakdown>
B. 4f impurities in a 8ener diode increases what happens to the forward voltage>
C. 0an 8ener be used as a rectifier>
1(. +pecifications of the 8ener diode>

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