AN11158

Understanding power MOSFET data sheet parameters

Rev. 4 4 February 2014 Application note
Document information
Info Content
Keywords MOSFET.
Abstract This application note describes the content of power MOSFET data sheet
parameters
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Application note Rev. 4 4 February 2014 2 of 28
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NXP Semiconductors AN11158
Understanding power MOSFET data sheet parameters

Revision history
Rev Date Description
v.4 20140204 Equation 2 on page 8 corrected
v.3 20130107 figure cross reference correction and temperature qualifier added on page 10
v.2 20120816 second release
v.1 20120416 initial release
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Application note Rev. 4 4 February 2014 3 of 28
NXP Semiconductors AN11158
Understanding power MOSFET data sheet parameters
1. Introduction
This user manual explains the parameters and diagrams given in an NXP Semiconductors
Power MOSFET data sheet. The goal is to help an engineer decide what device is most
suitable for a particular application.
It is important to pay attention to the conditions for which the parameters are listed, as
they can vary between suppliers. These conditions can affect the values of the
parameters making it difficult to choose between different suppliers. Throughout this
document, the data sheet for the BUK7Y12-55B is used as an example. BUK7Y12-55B is
an automotive-qualified part in an SOT669 (LFPAK56) package, with a voltage rating of
55 V.
The layout of this data sheet is representative of the general arrangement of NXP power
MOSFET data sheets.
NXP Power MOSFETs are designed with particular applications in mind. For example,
switching charge is minimized where switching losses dominate, whereas on-resistance is
minimized where conductive losses dominate.
2. Data sheet technical sections
2.1 Product profile
This section provides the overview of the device; giving the designer the key information
regarding device suitability. The general description describes the technology used; key
features and example applications are listed.
The quick reference data table contains more detailed information and the key parameters
for the intended application. An example of a quick reference data table is shown in
Table 1 Quick reference data.

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
> 25 C; T
j
s 175 C - - 55 V
I
D
drain current V
GS
=10 V; T
mb
=25 C;
Figure 1
- - 61.8 A
P
tot
total power dissipation T
mb
=25 C; Table 3 - - 105 W
Static characteristics
R
DS(on)
drain-source on-state resistance V
GS
=10 V; I
D
=20 A;
T
j
=25 C;
- 8.2 12 mO
Dynamic characteristics
Q
GD
gate-drain charge I
D
=20 A; V
DS
=44 V;
V
GS
=10 V;
- 14.8 - nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
=61.8 A; V
sup
s 55 V;
R
GS
=50 O; V
GS
=10 V;
T
j(init)
=25 C: unclamped
- - 129 mJ
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NXP Semiconductors AN11158
Understanding power MOSFET data sheet parameters
The general format for describing a parameter is to provide the official symbol and then
the correct parameter name. Any relevant conditions and information are listed after the
parameter names. The values and units of the values are entered in the last two columns.
All entries conform to IEC60747-8.
The quick reference data parameters are described in more detail in the characteristics
section of the data sheet. The following list is an introduction to some of the key issues
together with their interpretation:
V
DS
- the maximum voltage between drain and source that the device is guaranteed to
block in the off state. This section of the data sheet deals with the most commonly used
temperature range, as opposed to the full temperature range of the device.
I
D
- the maximum continuous current the device can carry with the mounting base held
continuously at 25 C with the device fully on. In the example provided in Table 1, I
D

requires a V
GS
of 10 V.
P
tot
- the maximum continuous power the device can dissipate with the mounting base
held continuously at 25 C.
R
DS(on)
(drain-source on state resistance) - the typical and maximum resistance of the
device in the on-state under the conditions described. R
DS(on)
varies greatly with both T
j

and the gate-source voltage (V
GS
). Graphs are provided in the data sheet to assist in
determining R
DS(on)
under various conditions.
Q
GD
(gate-drain charge) - an important switching parameter that relates to switching loss,
along with Q
GS
and Q
G(tot)
. Q
GD
is inversely proportional to R
DS(on)
, therefore choosing an
appropriate balance between R
DS(on)
and Q
GD
is critical for optimal circuit performance.
Q
OSS
(output charge) - an increasingly important switching parameter in modern
MOSFETs, as the other switching parameters have been optimized.
E
DS(AL)S
(non-repetitive drain-source avalanche energy) - describes the maximum energy
allowed in any voltage spike or pulse that exceeds the V
DS
rating of the device. Exceeding
this rating, runs the risk of damaging the device. This parameter describes what is
commonly referred to as "ruggedness" that is the ability of the device to withstand
overvoltage events.
2.2 Pinning information
This section describes the internal connections and general layout of the device. Note that
the symbol is for an enhancement n-channel MOSFET with the source and body tied
together, and a parallel diode between the source and drain. The parallel diode is known
as the body diode and is inherent in power MOSFETs. N-channel power MOSFETs have
the body diode between drain and source, as shown in Table 2.
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NXP Semiconductors AN11158
Understanding power MOSFET data sheet parameters

2.3 Ordering information
The ordering section provides information on how to order the device.
2.4 Limiting values
The limiting values table provides the range of operating conditions allowed for the
MOSFET. The conditions are defined in accordance with the absolute maximum rating
system (IEC60134). Operation outside of these conditions is not guaranteed, so it is
recommended that these values are not exceeded. Doing so runs the risk of immediate
device failure or reduced lifetime of the MOSFET. The avalanche ruggedness conditions,
when given, describe the limited conditions for which the V
DS
rating can be exceeded.
To calculate how the limiting values change with temperature, they are read together with
the derating curves provided.
The limiting values table for the BUK7Y12-55B is given as an example of a standard
limiting values table, in Table 3.

Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 S source
2 S source
3 S source
4 G gate
mb D mount base: connected to drain
mb
1 2 3 4
S
D
G
mbb076
Table 3. Limiting values
In accordance with the absolute maximum rating system IEC 60134
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
> 25 C; T
j
s 175 C - - 55 V
V
DGR
drain-gate voltage R
GS
=20 kO - - 55 V
V
GS
gate-source voltage 20 - +20 V
I
D
drain current V
GS
=10 V; T
mb
=25 C;
Table 1; Figure 1
- - 61.8 A
V
GS
=10 V; T
mb
=100 C;
Table 1
- - 43.7 A
I
DM
peak drain current V
GS
=10 V; T
mb
=25 C;
pulsed; Figure 1
- - 247 A
P
tot
total power dissipation T
mb
=25 C - - 105 W
T
stg
storage temperature 55 - +175 C
T
j
junction temperature 55 - +175 C
Source-drain diode
I
S
source current T
mb
=25 C - - 61.8 A
I
SM
peak source current t
p
s 10 s; pulsed;
T
mb
=25 C
- - 247 A
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Application note Rev. 4 4 February 2014 6 of 28
NXP Semiconductors AN11158
Understanding power MOSFET data sheet parameters
[1] Single pulse avalanche rating limited by a maximum junction temperature of 175 C
[2] Repetitive avalanche rating limited by an average junction temperature of 170 C
[3] Refer to application note AN10273 for further information
V
DS
(drain-source voltage) - the maximum voltage the device is guaranteed to block
between the drain and source terminals in the off-state for the specified temperature
range. For the BUK7Y12-55B, the temperature range is from +25 C to +175 C. For
operation below 25 C, the V
DS
rating reduces due to the positive temperature coefficient
of avalanche breakdown. This is covered in Section 2.4.1 of this document.
V
GS
(gate-source voltage) - the maximum voltage the device is specified to block between
the gate and source terminals. Some NXP data sheets specify different values for DC and
pulsed V
GS
. In these cases the DC value is a constant gate voltage over the lifetime of the
device at the maximum T
j
, whilst the higher-value pulsed-rating is for a shorter, specified
accumulated pulse duration at the maximum specified T
j
.
Gate-oxide lifetime reduces with increasing temperature and/or increasing gate voltage.
This means that V
GS
lifetimes or ratings quoted for lower junction temperatures are
significantly greater than if specified at higher temperatures. This can be important when
comparing data sheet values from different manufacturers.
V
DGR
(drain-gate voltage) is typically the same value as the V
DS
rating.
I
D
(drain current) - the maximum continuous current the device is allowed to carry under
the conditions described. This value can be related to either package construction, or the
maximum current that would result in the maximum T
j
. As such it depends on an assumed
mounting base temperature (T
mb
), the thermal resistance (R
th
) of the device, and its
R
DS(on)
at maximum T
j
.
Note that some suppliers quote the "theoretical" silicon limit, while indicating the package
limited limit in the characteristic curves.
I
DM
(peak drain current) - the maximum drain current the device is allowed to carry for a
pulse of 10 s or less.
P
tot
(total power dissipation) is the maximum allowed continuous power dissipation for a
device with a mounting base at 25 C. The power dissipation is calculated as that which
would take the device to the maximum allowed junction temperature while keeping the
mounting base at 25 C. In reality, it is difficult to keep the mounting base at this
temperature while dissipating the 105 W that is the calculated power dissipation for the
BUK7Y12-55B. In other words, P
tot
indicates how good the thermal conductivity of the
device is, and its maximum allowed junction temperature.
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
=61.8 A; V
sup
s 55 V;
R
GS
=50 O; V
GS
=10 V;
T
j(init)
=25 C: unclamped
- - 129 mJ
E
DS(AL)R
repetitive drain-source
avalanche energy
see Figure 3
[1][2][3]
- - - mJ
Table 3. Limiting values continued
In accordance with the absolute maximum rating system IEC 60134
Symbol Parameter Conditions Min Typ Max Unit
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NXP Semiconductors AN11158
Understanding power MOSFET data sheet parameters
Note that some other semiconductor vendors quote performance when mounted on a
copper PCB usually 1 inch square. In practice, this information is rather meaningless as
the semiconductor vendor has no control over how the device is cooled. See AN10874 -
LFPAK MOSFET thermal design guide. AN10874 describes different techniques that can
be used during the design phase to ensure that the PCB layout provides optimum thermal
performance.
T
stg
(storage temperature) is the temperature range in which the device can be stored
without affecting its reliability. Long term storage should be in an inert atmosphere to
prevent device degradation, for example, by tarnishing of the metal leads.
T
j
(junction temperature) is the operational temperature range of the device. Typically, T
j

is the same as the storage temperature. Outside of this range, device parameters are
outside the range of the data sheet and device lifetime is reduced.
I
S
(source current) - the maximum continuous current of the MOSFET body diode, which
is briefly discussed in Section 2.2. The same considerations apply as for I
D
.
I
SM
(peak source current) - the maximum current pulse that the MOSFET body diode is
guaranteed to carry. The same considerations apply as for I
DM
.
E
DS(AL)S
(non-repetitive drain-source avalanche energy) - the maximum allowed single
overvoltage energy pulse under the conditions specified. For this example, the conditions
are the maximum continuous drain current allowed for a mounting base temperature of
25C. The avalanche energy allowed is the energy pulse that would raise the device
temperature from 25 C to its maximum allowed T
j
, while the mounting base temperature
is held at 25 C.
The avalanche energy is specified for the maximum continuous drain current. Some
vendors specify the avalanche energy for a different current and higher inductive load,
which can increase the apparent avalanche energy for an inferior performance. An
example is given with the derating curve as described in Section 2.4.3 of this document.
E
DS(AL)R
(repetitive drain-source avalanche energy) - the maximum amount of energy
allowed in any single avalanche event when there is more than one avalanche event.
There are thermal constraints on a repeated avalanche operation that are in section 2.4.3
of this document. There are also the standard thermal requirements in addition to the
energy requirements for repetitive avalanche events. These requirements are assessed
with the thermal characteristic curves as described in Section 2.5. Avalanche
performance is covered in detail in application note AN10273.
This parameter is only listed on NXP data sheets where the repetitive avalanche capability
has been assessed. It is not shown in NXP data sheets where it has not been assessed,
for example non-automotive MOSFETs.
2.4.1 Derating curves
The derating curves are provided immediately after the tabulated limiting value data, and
help the designer calculate how the limits change with temperature.
2.4.1.1 Continuous drain current
The followings procedure serves as an example to calculate the maximum continuous
drain current for the BUK7Y12-55B. Assume an application with a mounting base
temperature T
mb
of 75 C.
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Application note Rev. 4 4 February 2014 8 of 28
NXP Semiconductors AN11158
Understanding power MOSFET data sheet parameters
Refer to the graph depicted in Figure 1 which depicts the continuous drain current as a
function of mounting base temperature.
Figure 1 shows that for a T
mb
of 75 C, the maximum continuous drain current has
reduced from 61.8 A, listed at 25 C, to 50 A.
The maximum current at any T
mb
, is the current that increases T
j
to the maximum allowed
temperature (175 C). P =I
2
R
DS(on)
represents the power dissipation at T
j
, where the
R
DS(on)
used is the maximum value for the maximum T
j
. Therefore, the allowed current is
proportional to the square root of the allowed power dissipation.
The power dissipation allowed for a given T
mb
is proportional to the allowed temperature
increase. This means that the derating curve shown, is based on the following equations:
(1)
(2)
At the maximum allowed junction temperature of 175 C, this current has decreased to
zero.

2.4.2 Power dissipation
Power dissipation varies with different temperatures. However, in this case, the power
dissipation curve is normalized. The allowed power is presented as a percentage of the
allowed power dissipation at 25 C, as opposed to an absolute value.
Example:
By observing the curve in Figure 2, the allowed power dissipation for a T
mb
of 75 C is
approximately 66 % of that allowed at 25 C.
Fig 1. Continuous drain current as a function of mounting base temperature
I
D
T
mb
( )
2
T
j
T
mb

T
j
25 C

------------------------
I
D
T
mb
( ) I
D
25 C

( )
T
j
T
mb

T
j
25 C

------------------------ =
003aac507
0
25
50
75
100
0 50 100 150 200
Tmb (C)
ID
(A)
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NXP Semiconductors AN11158
Understanding power MOSFET data sheet parameters
The graphic data in Figure 2, shows the maximum continuous power dissipation (P
tot
) at
25 C is 105 W.
This means that the maximum power dissipation allowed at 75 C, is 66 % of 105 W which
is 70 W.
Equation 3 is the equation to calculate power dissipation:
(3)

The curves provided in Figure 1 and Figure 2 are read in conjunction with the limiting
values tables. The information extracted, assists in calculating the maximum current
allowed and the power dissipation with respect to temperature.
2.4.3 Avalanche ruggedness
Avalanche ruggedness is covered in detail in AN10273.
Fig 2. Normalized total power dissipation as a function of mounting base temperature
P
tot
T
mb
( ) P
tot
25 C

( )
T
j
T
mb

T
j
25 C

------------------------ =
T
mb
(C)
0 200 150 50 100
03na19
40
80
120
P
der
(%)
0
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NXP Semiconductors AN11158
Understanding power MOSFET data sheet parameters

A simple example for the BUK7Y12-55B, using the information in AN10273, is extracted
from the limiting values Table 3:
With I
D
=61.8 A, V
sup
s 55 V, R
GS
=50 O, V
GS
=10 V and T
j(init)
=25 C unclamped, the
maximum E
DS(AL)S
is 129 mJ .
An avalanche event has a triangular pulse shape, so the average power is calculated as
(0.5 V
DS
I
DS
).
AN10273 states that the assumed breakdown voltage is 130 % of the rated voltage
(55 V 1.3).
Figure 3 shows a maximum current of just above 60 A at 25 C (the limiting values Table 3
shows that it is actually 61.8 A).
The time for the maximum avalanche energy can be read from Figure 3 as 60 s.
This means that the maximum avalanche energy allowed is:
0.5 (55 V 1.3) 61.8 A 60 s =133 mJ .
This value is approximately the 129 mJ quoted in the limiting value Table 3.
If a competitor quotes avalanche energy at 40 A, the graph shows that the avalanche time
is now 200 s. The avalanche energy is now 0.5 (55 V 1.3) 40 A 200 s =286 mJ .
Ruggedness events lie outside the Safe Operating Area (SOA).
2.4.4 Safe Operating Area (SOA)
The Safe Operating Area (SOA) curves are some of the most important on the data sheet.
Single-shot and repetitive avalanche rating
(1) Single pulse; T
j
=25 C
(2) Single pulse; T
j
=150 C
(3) Repetitive
Fig 3. Avalanche current as a function of avalanche period
aaa-002469
10
-1
1
10
10
-3
10
-2
10
-1
1
(1)
(2)
(3)
10
2
I
AL
(A)
t
AL
(ms)
10
maximum avalanche pulse
60 s
40 A avalanche pulse
200 s
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NXP Semiconductors AN11158
Understanding power MOSFET data sheet parameters

The SOA curves show the voltage allowed, the current and time envelope of operation for
the MOSFET. These values are for an initial T
mb
of 25 C and a single current pulse. This
is a complex subject which is further discussed in the appendix (Section 3.1).
2.5 Thermal characteristics
This section describes the thermal impedance as a function of pulse duration for different
duty cycles. This information is required to determine the temperature that the silicon
reaches under particular operating conditions, and whether it is within the guaranteed
operation envelope.
The thermal characteristics are shown in Figure 5. The thermal impedance changes with
pulse length because the MOSFET is made from different materials. For shorter
durations, the thermal capacity is more important, while for longer pulses, the thermal
resistance is more important.
The thermal characteristics are used to check whether particular power loading pulses
above the DC limit would take T
j
above its safe maximum limit. Repetitive avalanche
pulses must be considered in addition to the constraints specific to avalanche and
repetitive avalanche events.

Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aad475
10
-1
1
10
10
2
10
3
1 10 10
2
10
3
VDS (V)
ID (A)
DC
Limit RDSon = VDS / ID
100 ms
10 ms
1 ms
100 s
tp = 10 s
Table 4. Characteristics table
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to mounting base see Figure 5 - - 1.42 K/W
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NXP Semiconductors AN11158
Understanding power MOSFET data sheet parameters

Thermal resistance (R
th
) and thermal impedance (Z
th
) are related because the thermal
resistance is the steady-state measure of how the device blocks heat flow. Thermal
impedance is how the device responds to transient thermal events. It involves different
thermal capacities of parts of the device and the thermal resistances between these parts.
Under DC conditions, Z
th
is equal to R
th
. Equation 4 represents the temperature rise for a
particular power dissipation:
(4)
A worked example is discussed in the appendix (Section 3.1.2).
2.6 Electrical characteristics
This section is used to determine whether the MOSFET would be suitable in a particular
application. This section differs from the previous two sections that are used to determine
whether the MOSFET would survive within the application. The examples in this section
are taken from the data sheet for the BUK7Y12-55B unless otherwise stated.
2.6.1 Static characteristics
The static characteristics are the first set of parameters listed in this section and an
example is shown in Table 5:

Fig 5. Thermal characteristics
003aac479
10
-3
10
-2
10
-1
1
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th (j-mb)
(K/W)
= 0.5
0.2
0.1
0.05
single shot
0.02
t
p
T
P
t
t
p
T
=
AT
j
Z
th j mb) ( )
Power =
Table 5. Static characteristics
List of constants and limitations relating to the table i.e. voltages, currents and temperatures
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)DSS
drain-source
breakdown voltage
I
D
=250 A; V
GS
=0 V; T
j
=25 C 55 - - V
I
D
=250 A; V
GS
=0 V; T
j
=55 C 50 - - V
V
GS(th)
gate-source
threshold voltage
I
D
=1 mA; V
DS
=V
GS
; T
j
=25 C 2 3 4 V
I
D
=250 mA; V
DS
=V
GS
; T
j
=55 C - - 4.4 V
I
D
=1 mA; V
DS
=V
GS
; T
j
=175 C 1 - - V
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NXP Semiconductors AN11158
Understanding power MOSFET data sheet parameters
V
BR(DSS)
(drain-source breakdown voltage) - an expansion of the parameter listed and
explained in Section 2.4. This section lists the maximum voltage the device is guaranteed
to block between the drain and source terminals in the off-state over the entire MOSFET
temperature range. The temperature range is from 55 C to +175 C. The current
between the drain and the source terminals of the BUK7Y12-55B, is guaranteed to be
below 250 A for the voltage and temperature range. The range is 50 V or less if the
device is cooler than +25 C, and 55 V or below if the device is between +25 C and
+175C.
The effect of temperature on the off-state characteristics is twofold. The leakage current
increases with temperature, turning the device on. Competing against the leakage current
increase, the breakdown voltage also increases with temperature.
V
GS(th)
(gate-source threshold voltage) is important for determining the on-state and the
off-state of the MOSFET. V
GS(th)
is defined where V
DS
=V
GS
, although it is sometimes
quoted for a fixed V
DS
(e.g. 10 V).
Note that the definition of the threshold voltage for a particular current where the gate and
drain are shorted together, can differ from examples in textbooks. The parameter in
textbooks describes a change in the physical state of the MOSFET and is independent of
the MOSFET chip size. The parameter used in the data sheet is for a specified current
and is dependent on the chip size, as the current flow is proportional to the chip area.
The threshold voltage in the data sheet is defined in a way that is best for routine
measurement, but not how the actual device would typically be used. Consequently, the
graphs provided in Figure 6 support the parameter.
I
DSS
drain leakage
current
V
DS
=55 V; V
GS
=0 V; T
j
=25 C - 0.02 1 A
V
DS
=55 V; V
GS
=0 V; T
j
=175 C - - 500 A
I
GSS
gate leakage
current
V
DS
=0 V; V
GS
=20 V; T
j
=25 C - 2 100 nA
V
DS
=0 V; V
GS
=20 V; T
j
=25 C - 2 100 nA
R
DS(on)
drain-source
on-state resistance
V
GS
=10 V; I
D
=20 A; T
j
=175 C; - - 27.6 mO
V
GS
=10 V; I
D
=20 A; T
j
=25 C; - 8.2 12 mO
Table 5. Static characteristics continued
List of constants and limitations relating to the table i.e. voltages, currents and temperatures
Symbol Parameter Conditions Min Typ Max Unit
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Application note Rev. 4 4 February 2014 14 of 28
NXP Semiconductors AN11158
Understanding power MOSFET data sheet parameters

The first graph shows the variation in the threshold voltage for the typical and limit devices
over the rated temperature range. All the MOSFETs are guaranteed to have a threshold
voltage between the lines.
Consequently, for the BUK7Y12-55B at 25 C, if V
DS
and V
GS
are both less than 2 V, all
devices carry less than 1 mA. Also, all devices carry more than 1 mA if V
DS
and V
GS
are
both greater than 4 V. At 175 C, the lower limit has fallen to 1 V, while the upper limit has
fallen to 2.5 V. The lower limit is usually more important as it determines when the device
is guaranteed to be turned off, and what noise headroom an application needs.
The second graph shows how the device turns on around this threshold voltage. For the
BUK7Y12-55B, the current increases 100,000 times for an increase in gate voltage of less
than 1 V. An example is given for the situation when the drain-source voltage is fixed at
5 V.
I
DSS
(drain leakage current) guarantees the maximum leakage current that the device
passes at its maximum rated drain-source voltage during the off-state. It is important to
note how much higher I
DSS
is at high temperature, which is the worst case.
I
GSS
(gate leakage current) guarantees the maximum leakage current through the gate of
the MOSFET. The I
GSS
is important when calculating how much current is required to
keep the device turned on. Because it is a leakage current through an insulator, this
current is independent of temperature, unlike I
DSS
.
R
DS(on)
(drain-source on-state resistance) is one of the most important parameters. The
previous parameters guarantee how the device functions when it is off, how it turns off and
what leakage currents could be expected. These factors are important when battery
capacity is an issue in the application.
Gate-source threshold voltage as a function of junction
temperature
I
D
=1 mA; V
DS
=V
GS
Subthreshold drain current as a function of gate-source
voltage
T
j
=25 C; V
DS
=5 V
Fig 6. Supporting figures for threshold voltage parameter
T
j
(C)
60 180 120 0 60
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03aa35
V
GS
(V)
0 6 4 2
10
4
10
5
10
2
10
3
10
1
I
D
(A)
10
6
min typ max
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Understanding power MOSFET data sheet parameters
R
DS(on)
is a measure of how good a closed-switch the MOSFET is, when turned-on. It is a
key factor in determining the power loss and efficiency of a circuit containing a MOSFET.
The on-resistance R
DS(on)
I
D
2
gives the power dissipated in the MOSFET when it is
turned fully on. Power MOSFETs are capable of carrying tens or hundreds of amps in the
on-state.
Power dissipated in the MOSFET makes the die temperature rise above that of its
mounting base. Also when the MOSFET die temperature increases, its R
DS(on)
increases
proportionally. Maximum recommended junction temperature is 175 C (for all NXP
packaged MOSFETs).
Using the BUK7Y12-55B data sheet as an example:
R
th(j-mb)
temperature rise per Watt between junction (die) and mounting base =
1.42 K/W (1.42 C/W).
Maximum power dissipation for temperature rise of 150 K (T
mb
=25 C, T
j
=175 C) =
150

1.42
=105.63 W.
Maximum R
DS(on)
at a die temperature (T
j
) of 175 C =27.6 mO.
Therefore, at steady state with T
mb
=25 C and T
j
=175 C, P =105.63 W =
I
max
2
R
DS(on)(175 C)
.
Therefore:
(5)
=61.86 A (rounded down to 61.8 A in the data sheet).
The R
DS(on)
of the MOSFET depends on gate-source voltage, and there is a lower value
below which it rises very sharply. The ratio of the R
DS(on)
increase over temperature is
different for different gate drives. The red dashed line in Figure 7 shows the curve for a
higher temperature and demonstrates the differences.
I
max
P
max ( )175C
R
DS on ( )175C
-------------------------------
105.63W
0.0276O
--------------------- = =
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NXP Semiconductors AN11158
Understanding power MOSFET data sheet parameters

If an application requires good R
DS(on)
performance for lower gate-source voltages, then
MOSFETs are made with lower threshold voltages, e.g. the BUK9Y12-55B. However, the
lower threshold voltage of such a device means that it has a lower headroom for its
off-state at high temperature. This lower headroom often means that a device with a
higher threshold voltage is needed.
A typical curve showing how resistance increases with temperature is shown in Figure 8.

This diagram is for illustrative purposes only and not to be taken as an indication of hot R
dson

performance for any device
Fig 7. Drain-source on-state resistance as a function of gate-source voltage at 25 C and
high temperature
Fig 8. Normalized drain-source on-state resistance factor as a function of junction
temperature
V
GS
(V)
4 20 16 8 12
aaa-002470
R
DSon
(m)
14
21
7
28
35
0
Hot R
DSon
003aad695
0
0.4
0.8
1.2
1.6
2
2.4
-60 0 60 120 180
T
j
(C)
a
a
R
DS on ( )
R
DS on ( )25 C
------------------------------- =
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2.6.2 Dynamic characteristics
The dynamic characteristics determine the switching performance of the device. Several
of these parameters are highly dependent on the measurement conditions. Consequently,
understand the dynamic characteristics before comparing data sheets from suppliers with
different standard conditions. Table 6 is a sample dynamic characteristics table.

2.6.2.1 Gate charge
Q
G(tot)
, Q
GS
, and Q
GD
are all parameters from the same gate charge curve. They describe
how much gate charge the MOSFET requires to switch, for certain conditions. This is
particularly important in high frequency switching applications. Much of the power loss
occurs during switching, when there are significant voltage and current changes
simultaneously between the drain, gate and source. In the blocking state, there are
significant voltages but negligible currents. In the full-on state, there are significant
currents and small voltages.
The gate charge parameters are dependent on the threshold voltage and the switching
dynamics as well as the load that is being switched. There is a difference between a
resistive load and an inductive load.
An example of a gate charge curve is shown in Figure 9:
Table 6. Dynamic characteristics
List of constants and limitations relating to the table i.e. voltages, currents and temperatures
Symbol Parameter Conditions Min Typ Max Unit
Q
G(tot)
total gate charge I
D
=20 A; V
DS
=44 V; V
GS
=10 V - 35.2 - nC
Q
GS
gate source
charge
- 9.24 - nC
Q
GD
gate drain charge - 14.8 - nC
C
iss
input capacitance V
DS
=25 V; V
GS
=0 V; f =1 MHz;
T
j
=25 C
- 1550 2067 pF
C
oss
output capacitance - 328 394 pF
C
rss
reverse transfer
capacitance
- 153 210 pF
t
d(on)
turn-on delay time V
DS
=30 V; V
GS
=10 V; R
L
=1.5 O;
R
G(ext)
=10 O
- 19.3 - ns
t
r
rise time - 29.4 - ns
t
d(off)
turn-off delay time - 43.2 - ns
t
f
fall time - 22 - ns
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Because the capacitance varies with voltage and current, it is better to look at the gate
charge data than the capacitance data when determining switching performance. This is
especially true if the gate-driver circuit for the MOSFET is limited to a particular current,
and a rapid switch is required.
The gate charge curve describes what happens to a MOSFET which has a drain supply
limited to a particular current and voltage. The operation of the test circuit means that
during the gate charge curve, the MOSFET is provided with either a constant voltage or a
constant current.
During this time, the drain-source voltage begins to fall because the increased charge on
the MOSFET allows easier conduction. Consequently, although the gate-source voltage is
constant, the drain-gate voltage is falling.
Eventually the capacitance stops increasing and any further increases in gate charge
increase the gate-source voltage. This characteristic is sometimes referred to as the
"Miller plateau" as it refers to the time during which the so-called Miller capacitance
increases. The Miller plateau is also known as the gate-drain charge (Q
GD
).
During this period, there are significant currents and voltages between the drain and
source, so Q
GD
is important when determining switching losses.
Fig 9. Gate charge curve also showing drain-source currents and voltages
V
G
V
D
I
D
Q
GS
(plateau)
Q
GS
(plateau)
Q
GS
(plateau)
Q
G
(tot)
aaa-002471
Q
GD
Q
GD
Q
GS
(th)
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NXP Semiconductors AN11158
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Once the end of the Miller plateau is reached, the gate-source voltage increases again,
but with a larger capacitance than before Q
GS
had been reached. The gradient of the gate
charge curve is less above the Miller plateau.
The gate-charge parameters are highly dependent on the measurement conditions.
Different suppliers often quote their gate-charge parameters for different conditions,
demanding care when comparing gate charge parameters from different sources.
Higher currents lead to higher values of gate-source charge because the plateau voltage
is also higher. Higher drain-source voltages, lead to higher values of gate-drain charge
and total gate charge, as the plateau increases.
The drain-source currents and voltages during the gate charge switching period are
shown in Figure 10
If the MOSFET starts in the off state (V
GS
=0 V), an increase in charge on the gate initially
leads to an increase in the gate-source voltage. In this mode, a constant voltage (V
DS
) is
supplied between the source and drain.
When the gate-source voltage reaches the threshold voltage for the limiting current at that
drain-source voltage, the capacitance of the MOSFET increases and the gate-voltage
stays constant. This is known as the plateau voltage and the onset charge is referred to as
Q
GS
. The higher the current is, the higher the plateau voltage (see Figure 10).

2.6.2.2 Capacitances
Capacitance characteristics are generally less useful than the gate charge parameters, for
the reasons already discussed. However, they are still listed on data sheets. The three
capacitances that are normally listed are as follows:
C
ISS
(input capacitance) is the capacitance between the gate and the other two
terminals (source and drain).
C
OSS
(output capacitance) is the capacitance between the drain and the other two
terminals (gate and source).
Fig 10. Features of gate charge curve
Q
G
(nC)
V
GS
(V)
Q
tot
reduced V
DS
reduced I
DS
Q
GS
Q
GD
aaa-002472
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C
RSS
(reverse transfer capacitance) is the capacitance between the drain and the
gate.
Semiconductor capacitances generally depend on both voltage and the frequency of the
capacitance measurement. Although it is difficult to compare capacitances measured
under different conditions, many suppliers specify a measurement frequency of 1 MHz.
Consequently, the capacitances vary with drain-source voltage (see Figure 11). However,
the capacitances also vary with gate-source voltage, which is why the gradients in the
gate-charge curve vary for different voltages (see Figure 9).
The relationship between charge, voltage and capacitance in the gate charge curve is
AQ =AC AV. For different gradients at different gate voltages, the capacitance changes
significantly with gate-source voltage.

2.6.2.3 Switching times
Most manufacturers quote resistive load switching times. However, extreme care is
needed when comparing data from different manufacturers, as they are highly dependent
on the resistance of the gate drive circuit used for the test. In devices for fast switching
applications, the gate resistance of the MOSFET is often quoted as capacitive time
constants which are equally dependent on resistance and capacitance.
2.6.3 Diode characteristics
The diode characteristics are important if the MOSFET is being used in the so-called
"third quadrant". The third quadrant is a typical arrangement where the MOSFET replaces
a diode to reduce the voltage drop from the inherent diode forward voltage drop. In such a
situation, there is always a small time period when the MOSFET parasitic diode is
conducting before the MOSFET turns on. For such applications, the diode switching
parameters are important. In addition, diode reverse recovery contributes to the power
losses as well as oscillation, which can cause EMC concern.
V
GS
=0 V; f =1 MHz
Fig 11. Capacitances as a function of drain source voltage
003aad473
10
2
10
3
10
4
10
-1
1 10 10
2
VDS (V)
C
(pF)
Ciss
Crss
Coss
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2.7 Package outline
This section describes the package outline dimensions and tolerances.
3. Appendices
3.1 Safe Operating Area (SOA) curves
To highlight the key features, Figure 12 provides an idealized SOA curve for a
hypothetical MOSFET. Data for a hypothetical MOSFET for a single pulse length, is
shown to highlight the region where it deviates from the ideal curve.

The dashed line (5) is to emphasize where the curve deviates from the ideal. In reality,
there is a single curve with a change of gradient where the linear mode derating becomes
important.
R
DS(on)
limit
R
DS(on)
is region (1) of the graph and Equation 6 represents the limiting line:
(6)
The limit is when the MOSFET is fully on and acting as a closed switch with a resistance
that is no greater than the hot R
DS(on)
.
(1) R
DS(on)
limit (V
DS
/I
DS
is constant)
(2) Maximum pulsed drain current (I
DS
is constant)
(3) Maximum pulsed power dissipation (V
DS
I
DS
is constant)
(4) Maximum allowed voltage (V
DS
is constant)
(5) Linear mode derating - a departure from the ideal behavior shown in (3) due to operation within a
regime of positive feedback, and potential thermal runaway
Fig 12. Idealized SOA curve at a single time pulse for hypothetical MOSFET
V
DS
(V)
1 10
3
10
2
10
10
1
10
2
I
DS
(A)
10
-1
aaa-002473
(1)
(2)
(3)
(5)
(4)
V
DS
I
DS
--------- R
DS on ( )
175 C

( ) s
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Understanding power MOSFET data sheet parameters
Constant current region
The constant current region is region (2) of the graph. It is the maximum pulsed drain
current, which is limited by the device manufacturer (for example, the wire-bonds within
the package).
Maximum power dissipation (linear mode) limit
In this region, the MOSFET is acting as a (gate) voltage-controlled current source. This
means that there are significant voltages and currents applied simultaneously, leading to
significant power dissipation. Line (3) shows the idealized curve, whereas the dotted line
(5) shows where it deviates from the ideal.
The limiting factor for the SOA curve in region (5), is the heating applied during a
rectangular current and voltage pulse. Even in the ideal situation, this curve depends on
the transient thermal impedance of the MOSFET, which is covered in Section 2.5.
The transient thermal impedance varies with the pulse length. This is due to the different
materials in the MOSFET having different thermal resistances and capacities. The
differences create a thermal equivalent to an RC network from the junction (where the
heat is generated) to the mounting base. Equation 7 is the calculation used to determine
the ideal curve in this region.
(7)
The ideal situation accurately describes the situation for sufficiently high current densities.
However, it is overly optimistic for low current-densities, i.e. towards the bottom right of
region (3). Low current densities and high voltages can lead to thermal runaway in the
linear mode operation. Thermal runaway is discussed in the following section.
Thermal runaway in linear mode
Power MOSFETs are often considered to be immune to thermal runaway due to the
temperature coefficient of resistance, which means that as temperature rises, current falls.
This is only true for MOSFETs that are fully on (i.e. in region 1), but it is not the whole
story.
When a MOSFET is turned on, there are two competing effects that determine how its
current behaves with increasing temperature. As the temperature rises, the threshold
voltage falls. The MOSFET is effectively turned on more strongly, thereby increasing the
current. In opposition, the resistance of the silicon increases with increasing temperature,
thereby reducing the current. The resultant effect for a constant drain-source voltage, is
shown in Figure 13. This situation occurs when the gate-source voltage of a MOSFET is
being used to control the current, or when the MOSFET is switched sufficiently slowly.
P I
D
V
DS

T
j max ) ( )
T
mb

Z
th j-mb ( )
---------------------------------- Cons t tan = = =
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The resistance increase dominates at high currents, meaning that localized heating leads
to lower currents. The threshold-voltage drop dominates at low currents, meaning that
localized heating lowers the threshold voltage. This condition effectively turns on the
device more, leading to higher currents and a risk of thermal runaway.
Consequently, for a given V
DS
, there is a critical current below which there is a
positive-feedback regime and a subsequent risk of thermal runaway. Above this critical
current, there is negative feedback and thermal stability. This critical current is known as
the Zero Temperature Coefficient (ZTC) point.
This effect reduces the SOA performance for low currents and high drain-source voltages.
The constant power line must be reduced as shown in region (5). For short switching
events, this effect is insignificant. However, as the duration of the switching event
becomes longer, for example to reduce electromagnetic interference, the effect becomes
more important and potentially hazardous.
Voltage-limited region
The device is limited by its breakdown voltage V
DS
which is shown in region (4). The quick
reference data provides values for V
DS
at temperatures of 25 C and above. In the
hypothetical MOSFET shown in Figure 13, the rating is 100 V. For the BUK7Y12-55B, the
voltage is 55 V.
3.1.1 Safe operating area for temperatures above 25 C
When taking measurements from the SOA curve there are two main assumptions:
1. Operation temperature of 25 C
2. It is a rectangular pulse
However, some pulses are not rectangular and do not occur at 25 C. For these instances,
the use of Equation 8 can be used.
Fig 13. Transfer characteristics for a hypothetical MOSFET, showing regions of positive
and negative temperature coefficient
V
GS
(V)
I
D
(A)
aaa-002474
25 C
175 C
negative temp.
coefficient
positive temp.
coefficient
ZTC point
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Understanding power MOSFET data sheet parameters
(8)
Where T
j(max)
is the maximum die temperature of 175 C and T
j(amb)
is the ambient
temperature of the system. For example, in automotive applications, the two main ambient
temperatures used are 85 C for in-cabin (inside the driver compartment) and 105 C for
under the hood (near and around the engine).
It is worth noting that using the ambient temperature in calculations for worst case
analysis, can be misleading. It is misleading because the temperature of the MOSFET
mounting base before it is switched on can be higher. For example, a design has 10
MOSFETs and 9 are powered. The mounting base temperature of the 10
th
MOSFET
(which is off) is likely to be similar to that of the other 9 MOSFETs that are ON. So if the
ambient is 105 C, and the mounting base temperature of the 9 MOSFETs that are ON is
125 C, T
j(amb)
of the 10
th
MOSFET is 125 C and not 105 C. Calculations under these
conditions are conservative and are more suitable for worst case analysis (Equation 9).
(9)
Note: Use R
th(j-mb)
instead of Z
th(j-mb)
in a DC application (not pulsed). Above
approximately 100 ms, Z
th
is indistinguishable from R
th
.
3.1.1.1 Example calculations
Calculate the max DC I
DS
for a BUK9277-55A, with V
DS
=40 V at 25 C
Rewrite Equation 10 to bring out I
DS
as the main subject (P
av
is the average power, and is
I
DS
V
DS
for the DC situation). As it is a DC situation, replace Z
th
with R
th
.
(10)
(11)
(12)
Therefore, the maximum DC current rating for these conditions is 1.28 A.
3.1.2 Example using the SOA curve and thermal characteristics
Consider the following application during linear mode operation:
Device BUK7Y12-55B, square current pulses of the following:
I
pulse
=20 A
V
pulse
=40 V
f =2 kHz
t
pulse
=100 s
T
amb
=25 C
T
j rise ( )max
T
j max ( )
T
j amb ( )
2
3
---P
av
Z
th
t
av
2
------
\ .
| |
= =
T
j rise ( )max
T
j max ( )
T
j amb ( )
P
av
Z
th t
av
( )
= =
T
j rise ( )
I
DS
V
DS
Z
th av ( )
=
T
j rise ( )
V
DS
R
th

----------------------- I
DS
=
175 C 25 C
40 V 2.93 K W
-------------------------------------------- 1.28 A =
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Understanding power MOSFET data sheet parameters
3.1.2.1 Calculation steps
The SOA curve is initially checked to see whether any single pulse would cause a
problem. Observing the SOA curve, it can be seen that the 20 A, 40 V pulse lies between
the 100 s and 1 ms lines. This indicates that the pulse lies within acceptable limits.
The duty cycle for the pulses is now calculated using a frequency of 2 kHz for 100 s
pulses. These values give a duty cycle of 0.2. The SOA curve demonstrates that for
100 s, the line with the duty cycle (o) has a transient thermal impedance of 0.4 K/W.
The power dissipation for the square pulse is 20 A 40 V, which equals 800 W.
Using Equation 8, the temperature rise for the 100 s pulse is calculated as being 800 W
0.4 K/W, which equals 320 K. With a starting temperature of 25 C, the temperature rise
results in a finishing temperature of 345 C. As the MOSFET junction temperature must
not exceed 175 C, the MOSFET is not suitable for this application.
If the application requires a single pulse, then the curve shows that the transient thermal
impedance for a 100 s pulse is 0.1 K/W. As a result, the temperature rise is 800 W
0.1 K/W which equals 80 K. The finishing temperature is then 105 C for a starting
temperature of 25 C. The device is able to withstand this, thereby confirming what the
SOA curve already indicated.
3.1.2.2 Derating for higher starting temperatures
The example Safe Operating Area calculations were performed for a mounting base
temperature of 25 C. At higher mounting base temperatures, the SOA curves must be
derated, as the allowed temperature rise is reduced. The allowed power of the pulse is
reduced proportionally to the reduced temperature rise. For example, with a mounting
base temperature of 25 C, the allowed temperature rise is 150 C. At 100 C, the allowed
temperature rise is half of that (75 C). The allowed power is half of that allowed at 25 C.
Because of the effects of linear-mode operation, the current is maintained but the allowed
drain-source voltage is derated.
The 100 C derating for the BUK7Y12-55B is shown in Figure 14.
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Example:
Is a 1 ms pulse of 30 A and 15 V allowed at 100 C for the BUK7Y12-55B?
At 25 C, it can be seen that a V
DS
of 20 V is allowed for 30 A, and 1 ms. Therefore, at
100 C, a V
DS
of 10 V is allowed.
A 1 ms pulse of 30 A and 15 V at 100 C is outside the permitted safe operating area and
is consequently not allowed.
4. References
[1] The Impact of Trench Depth on the Reliability of Repetitively Avalanched
Low-Voltage Discrete Power Trench nMOSFETs - Alatise et al, IEE Electron Device
Letters, Volume 31, No7, J uly 2010, pages 713-715.
[2] Semiconductor Devices - Physics and Technology S.M.Sze, 1985, J ohn Wiley &
Sons.
[3] Application Note AN10273 - Power MOSFET single-shot and repetitive avalanche
ruggedness rating.
[4] Application Note AN10874 - LFPAK MOSFET thermal design guide.
Fig 14. SOA curve showing derating for 100 C
I
D
(A)
1 10
3
10
2
10
1
10
10
3
10
-1
V
DS
(V)
limit R
DSon
= V
DS
/ I
D
aaa-002475
10
2
DC
t
p
= 10 s
1 ms
10 ms
100 ms
100 s
T
MB
= 25 C; I
DM
is single pulse
0.5 V at 100C 5 V at 100C 50 V at 100C
20 V, 30 A at 25C
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5. Legal information
5.1 Definitions
Draft The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
5.2 Disclaimers
Limited warranty and liability Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customers own
risk.
Applications Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customers sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customers applications and
products planned, as well as for the planned application and use of
customers third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customers applications or products, or the application or use by customers
third party customer(s). Customer is responsible for doing all necessary
testing for the customers applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customers third party
customer(s). NXP does not accept any liability in this respect.
Export control This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Evaluation products This product is provided on an as isand with all
faultsbasis for evaluation purposes only. NXP Semiconductors, its affiliates
and their suppliers expressly disclaim all warranties, whether express, implied
or statutory, including but not limited to the implied warranties of
non-infringement, merchantability and fitness for a particular purpose. The
entire risk as to the quality, or arising out of the use or performance, of this
product remains with customer.
In no event shall NXP Semiconductors, its affiliates or their suppliers be liable
to customer for any special, indirect, consequential, punitive or incidental
damages (including without limitation damages for loss of business, business
interruption, loss of use, loss of data or information, and the like) arising out
the use of or inability to use the product, whether or not based on tort
(including negligence), strict liability, breach of contract, breach of warranty or
any other theory, even if advised of the possibility of such damages.
Notwithstanding any damages that customer might incur for any reason
whatsoever (including without limitation, all damages referenced above and
all direct or general damages), the entire liability of NXP Semiconductors, its
affiliates and their suppliers and customers exclusive remedy for all of the
foregoing shall be limited to actual damages incurred by customer based on
reasonable reliance up to the greater of the amount actually paid by customer
for the product or five dollars (US$5.00). The foregoing limitations, exclusions
and disclaimers shall apply to the maximum extent permitted by applicable
law, even if any remedy fails of its essential purpose.
Translations A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
5.3 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
NXP Semiconductors AN11158
Understanding power MOSFET data sheet parameters
NXP B.V. 2014. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 4 February 2014
Document identifier: AN11158
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section Legal information.
6. Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Data sheet technical sections. . . . . . . . . . . . . . 3
2.1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 4
2.3 Ordering information. . . . . . . . . . . . . . . . . . . . . 5
2.4 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.4.1 Derating curves . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4.1.1 Continuous drain current . . . . . . . . . . . . . . . . . 7
2.4.2 Power dissipation . . . . . . . . . . . . . . . . . . . . . . . 8
2.4.3 Avalanche ruggedness . . . . . . . . . . . . . . . . . . . 9
2.4.4 Safe Operating Area (SOA) . . . . . . . . . . . . . . 10
2.5 Thermal characteristics. . . . . . . . . . . . . . . . . . 11
2.6 Electrical characteristics. . . . . . . . . . . . . . . . . 12
2.6.1 Static characteristics. . . . . . . . . . . . . . . . . . . . 12
2.6.2 Dynamic characteristics . . . . . . . . . . . . . . . . . 17
2.6.2.1 Gate charge . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.6.2.2 Capacitances . . . . . . . . . . . . . . . . . . . . . . . . . 19
2.6.2.3 Switching times. . . . . . . . . . . . . . . . . . . . . . . . 20
2.6.3 Diode characteristics . . . . . . . . . . . . . . . . . . . 20
2.7 Package outline . . . . . . . . . . . . . . . . . . . . . . . 21
3 Appendices . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.1 Safe Operating Area (SOA) curves . . . . . . . . 21
3.1.1 Safe operating area for temperatures
above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.1.1.1 Example calculations . . . . . . . . . . . . . . . . . . . 24
3.1.2 Example using the SOA curve and thermal
characteristics. . . . . . . . . . . . . . . . . . . . . . . . . 24
3.1.2.1 Calculation steps . . . . . . . . . . . . . . . . . . . . . . 25
3.1.2.2 Derating for higher starting temperatures. . . . 25
4 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5 Legal information. . . . . . . . . . . . . . . . . . . . . . . 27
5.1 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5.2 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5.3 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 27
6 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28