POIN T NINE

D1010 TetraFET

DaFET

Te c h n o l o g i e s , I n c .

150W - 28V - 500MHz

GOLD METALLISED MULTI-PURPOSE
SILICON DMOS RF FET
FEATURES
METAL GATE

ABSOLUTE MAXIMUM RATINGS

EXTRA LOW Crss

BROAD BAND
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN

(TCASE = 25C unless otherwise stated)

PD
BVDSS
VGSS
ID
Tstg
Tj
RTHj-case

APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from DC to 500 MHz

Power Dissipation
389W
Drain-source breakdown voltage
70V
Gate-source voltage
20V
Drain Current
20A
Storage temperature
- 65 to 150C
Maximum operating junction temperature
200C
Thermal resistance junction-case
Max. 0.45C/W

ELECTRICAL CHARACTERISTICS (TCASE = 25C unless otherwise stated)

Parameter

Test Conditions

BVDSS
IDSS
IGSS
VGS(th)
gfs

Breakdown voltage, drain source

Drain leakage current
Gate leakage current
Gate threshold voltage
Transconductance (300s pulse)

GPS

VSWR

Common source power gain

Drain efficiency
Load mismatch tolerance

Ciss
Coss
Crss

Input capacitance
Output capacitance
Reverse transfer capacitance

Min. Typ. Max.

PER SIDE
VGS=0
ID=100mA
VDS=28V
VGS=0
VGS=20V
VDS=0
ID=10mA
VDS=VGS
VDS=10V
ID=4A

70

1
3.2

TOTAL DEVICE
PO=150W
VDS=28V IDQ=2A
f=500MHz

VDS=0V
VDS=28V
VDS=28V

4
1
7

10
60
20:1

PER SIDE
VGS=-5V f=1MHz
VGS=0
f=1MHz
VGS=0
f=1MHz

Unit
Vdc
mAdc
Adc
Vdc
Mhos

dB
%

240
100
10

pF
pF
pF

DIMENSIONS
E

D
P
B
I
F
J

M
O

DM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
P

Millimeter
19.05
10.9
45
9.78
5.71
27.94
1.52R
10.16
22.22
0.13
2.72
1.65
5.08
34.04
1.65R

TOL
.50
.25
.05
.13
.13
.13
.13
.13
MAX
.02
.13
.13
.50
.13
.13

Inches
.750
.430
45
.385
.225
1.100
.060R
.400
.875
.005
.I07
.065
.200
1.340
.065R

TOL
.020
.010
5
.005
.005
.005
.005
.005
MAX
.001
.005
.005
.020
.005
.005

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and
metal flange is beryllium oxide. Beryllium oxide dust is
highly toxic and care must be taken during handling
and mounting to avoid damage to this area. THESE
DEVICES MUST NEVER BE THROWN AWAY WITH
GENERAL INDUSTRIAL OR DOMESTIC WASTE.

U.S. PATENTS 5,121,176 & 5,179,032

GLOBAL PATENTS PENDING

2697 Lavery Court #8 Newbury Park, CA 91320 (805) 375-6600 Fax: (805) 375-6602 www.point9.com www.rfmosfet.com

POIN T NINE

D101 TetraFET D1010 TetraFET

Te c h n o l o g i e s , I n c .

180

90

180

17

160

80

160

16

140

70

140

15

120

60

120

14

P out 100
W

80

V ds = 28V
Idq = 2A
f =400MHz

60
40
20
0
0

10

50 Efficiency

P out 100

40 %

30

60

20

40

10

20

0
20

15

13 Gain

80

12 dB

V ds = 28V
Idq = 2A
f =400MHz

10
9

0
0

Pout
Drain Efficiency

P in W

11

10
P in W

Figure 1 Power Output and Efficiency

vs. Power Input.

8
20

15
Pout
Gain

Figure 2 Power Output & Gain

vs. Power Input.

IMD3

D1010

f 1 = 400 MHz
f 2 = 400.1MHz
Idq = 2A
V ds = 28V

-10

-20

dBc

OPTIMUM SOURCE AND LOAD IMPEDANCE

-30

Frequency
MHz
400

-40

-50
0

20

40

60

80

100

120

140

160

ZS

ZL

1.7 + j0.1

2.7 + j1

180

P out W PEP

Figure 3 IMD vs. Output Power.

2697 Lavery Court #8 Newbury Park, CA 91320 (805) 375-6600 Fax: (805) 375-6602 www.point9.com www.rfmosfet.com

POIN T NINE

D101 TetraFET D1010 TetraFET

Te c h n o l o g i e s , I n c .

Typical S Parameters
! Vds=28V
Idq=1A per side
# MHZ S MA R 50
!Freq
!MHz
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
260
270
280
290
300
310
320
330
340
350
360
370
380
390
400
410
420
430
440
450
460
470
480
490
500

S11
mag
0.729
0.72
0.725
0.745
0.758
0.773
0.794
0.81
0.831
0.841
0.852
0.862
0.871
0.885
0.895
0.901
0.905
0.911
0.915
0.922
0.933
0.927
0.93
0.938
0.939
0.94
0.942
0.95
0.944
0.951
0.952
0.954
0.963
0.953
0.96
0.96
0.96
0.963
0.964
0.966
0.964
0.965
0.965
0.967
0.968
0.967
0.966
0.967
0.967

ang
-173.6
-172.9
-171.7
-171.5
-170.7
-171
-170.6
-170.6
-170.9
-171.4
-171.8
-172.1
-172.6
-173.1
-173.5
-174.1
-175.2
-175
-175.8
-175.8
-176.4
-176.4
-177.3
-177.2
-178.4
-178.6
-179
-179.9
-179.3
-179.5
179.6
-179.9
179.2
178.9
178.3
178.4
177.7
177.5
177
176.5
176.8
176.5
175.6
175.3
175.1
175.2
174.8
174.3
173.9

S21
mag
20.47
20.57
18.45
14.74
12.21
10.35
8.943
7.829
6.878
6.107
5.449
4.877
4.373
3.949
3.574
3.246
2.948
2.688
2.486
2.313
2.16
2.013
1.866
1.729
1.617
1.502
1.433
1.359
1.3
1.238
1.184
1.115
1.04
0.964
0.9
0.847
0.802
0.744
0.704
0.721
0.704
0.677
0.64
0.605
0.576
0.552
0.53
0.512
0.503

ang
103.6
97.4
91.1
85.1
79.6
75.6
70.5
65.7
61.9
58.6
54.9
52.4
48.8
46.1
42.4
40.4
38.5
36.6
36
35
33.7
31.9
29.5
27.4
26.1
24.8
24.5
25.1
24.1
22.3
20.4
18.3
15.7
13.8
13
13.1
13.1
12.6
16.9
16.3
14.6
12.1
10.3
9.7
8.8
9.4
9.7
9.4
9.5

S12
mag
0.011
0.012
0.012
0.011
0.011
0.01
0.01
0.009
0.009
0.008
0.007
0.007
0.006
0.006
0.006
0.005
0.005
0.005
0.005
0.006
0.006
0.006
0.007
0.007
0.008
0.008
0.009
0.01
0.011
0.012
0.012
0.013
0.013
0.014
0.014
0.015
0.015
0.015
0.015
0.017
0.018
0.018
0.019
0.019
0.019
0.02
0.02
0.021
0.022

ang
25
13.7
7.4
3.1
0.7
-1.1
-2.4
-3.2
-2.6
-2.4
-1
1.9
4.8
8.8
13.8
19.7
26.8
35.5
42.5
50.3
56.4
60.1
62.9
66.7
70.8
73.5
76.7
80.4
81.3
81.5
80.4
79
77.5
77.5
78.1
78.6
79.6
78.6
82.9
84
83.1
81.8
80.5
81
81.2
82.4
83.6
83.2
83.8

S22
mag
0.557
0.5664
0.5848
0.6097
0.6365
0.6634
0.6935
0.712
0.734
0.7559
0.7685
0.7902
0.8089
0.8248
0.8333
0.8413
0.8512
0.8696
0.871
0.8817
0.8865
0.8966
0.8999
0.9096
0.9101
0.9152
0.9159
0.923
0.9216
0.9297
0.9345
0.9344
0.9394
0.9382
0.943
0.9437
0.9458
0.9475
0.9492
0.9527
0.9499
0.9556
0.9593
0.9546
0.9598
0.9599
0.9608
0.9604
0.9596

ang
-172.3
-169.2
-167.8
-165.5
-164.4
-163.7
-163.8
-164
-163.6
-164
-164.8
-165.2
-166
-165.9
-166.9
-167.7
-168.5
-168.5
-169.4
-169.4
-170.3
-171
-171.5
-171.4
-172.3
-172.5
-173
-173.6
-173.9
-174.8
-174.8
-175.4
-175.6
-176.2
-176.2
-176.8
-176.9
-177.2
-177.5
-177.3
-178.2
-178.2
-178.8
-179
-179.7
-179.4
-179.9
179.8
179.5

2697 Lavery Court #8 Newbury Park, CA 91320 (805) 375-6600 Fax: (805) 375-6602 www.point9.com www.rfmosfet.com

POIN T NINE

D1010 TetraFET D1010 TetraFET

Te c h n o l o g i e s , I n c .

+28V
100nF

Gate-Bias

100
5.6K

3K

100nF
5 x 5mm
contact
pad

100uF

5 x 5 mm
contact pad

10nF
L1

T2
L2

91pF
T4
D1010
T1

30pF

2-18pF

680pF

2-18pF
2-18pF

30pF
T5
T3
680pF

D1010

91pF
5 x 5mm
contact
pad

5 x 5 mm
contact pad

T6

2-18pF

D1010 TEST FIXTURE

Substrate 1.6mm PTFE/ glass, Er= 2.5
All microstrip lines W= 4.4mm
T1
T2,3
T4,5
T6
L1
L2

12cm
7.5cm
7cm
11cm
6.5 turns
6.5 turns

50W UT85 semi-rigid coax on ferrite core

15W UT85-15 semi-rigid coax
15W UT85-15 semi-rigid coax
50W UT85 semi-rigid coax on ferrite core
25swg enamelled copper wire on Fair-Rite FT50B-43 core
25swg enamelled copper wire, 4mm internal diameter

2697 Lavery Court #8 Newbury Park, CA 91320 (805) 375-6600 Fax: (805) 375-6602 www.point9.com www.rfmosfet.com

*D1010
*PSPICE MODEL FOR POINT NINE RF N-CHANNEL VERTICAL DMOS POWER FET
*May 2004

*
GATE
*
I
DRAIN
*
I
I
SOURCE
*
I
I
I
.SUBCKT D1010 10 20 30
*Cin1,Cin2 & Lin model the input side of the package
Cin1
10
30
0.79p
Lin
10
11
0.38n
Cin2
11
30
0.79p
LG
11
12
0.6n
;Gate bond wire inductance
CGS
12
13
184p
;Gate-source capacitance
MOS
14
12
13
13 D1010 L=0.9U W=0.224
;D G S B
LEVEL1
JFET
16
13
14
D1010
;D G S
DBODY 13
16
D1010
;P N
LS
13
30
0.2n
;Source bond wire inductance
CGD
12
16
4p
;Gate-drain feedback capacitance
*Cout1,Cout2 & Lout model the output side of the package
Cout1
16
30
1.38p
Lout
16
20
0.73n
Cout2
20
30
1.15p
.MODEL D1010
.MODEL D1010
.MODEL D1010

NMOS (VTO=4.76 KP=2.81E-5 LAMBDA=0.032 RD=0.019 RS=0.077)

NJF (VTO=-4.3 BETA=1 LAMBDA=0.54)
D
(CJO=328.8P RS=0.25 VJ=0.7 M=0.35 BV=75)

.ENDS

2697 Lavery Court #8 Newbury Park, CA 91320 (805) 375-6600 Fax: (805) 375-6602 www.point9.com www.rfmosfet.com