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Advanced Power Electronics Corp.: AP85T03GH/J

This document provides specifications for an N-channel enhancement mode power MOSFET. It includes key information such as: - Package type: TO-252 surface mount package suitable for low voltage applications - Maximum ratings: Drain-source voltage of 30V, continuous drain current of 75A - Electrical characteristics: On-resistance of 6mΩ, gate threshold voltage of 1-3V - Thermal characteristics: Junction-case thermal resistance of 1.4°C/W - Switching characteristics: Turn-on delay time of 11ns, rise time of 77ns

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Díaz Rivero Cesar Enrique
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133 views4 pages

Advanced Power Electronics Corp.: AP85T03GH/J

This document provides specifications for an N-channel enhancement mode power MOSFET. It includes key information such as: - Package type: TO-252 surface mount package suitable for low voltage applications - Maximum ratings: Drain-source voltage of 30V, continuous drain current of 75A - Electrical characteristics: On-resistance of 6mΩ, gate threshold voltage of 1-3V - Thermal characteristics: Junction-case thermal resistance of 1.4°C/W - Switching characteristics: Turn-on delay time of 11ns, rise time of 77ns

Uploaded by

Díaz Rivero Cesar Enrique
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

AP85T03GH/J

Pb Free Plating Product

Advanced Power
Electronics Corp.

N-CHANNEL ENHANCEMENT MODE


POWER MOSFET

Low Gate Charge

Simple Drive Requirement


Fast Switching

30V

RDS(ON)

6m

ID

RoHS Compliant

BVDSS

75A

Description

G D
S

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP85T03GJ) is available for low-profile applications.
G

TO-252(H)

TO-251(J)

Absolute Maximum Ratings


Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

VGS

Gate-Source Voltage

20

ID@TC=25

Continuous Drain Current, VGS @ 4.5V

75

ID@TC=100

Continuous Drain Current, VGS @ 4.5V

55

IDM

Pulsed Drain Current

350

PD@TC=25

Total Power Dissipation

107

Linear Derating Factor

0.7

W/

TSTG

Storage Temperature Range

-55 to 175

TJ

Operating Junction Temperature Range

-55 to 175

Thermal Data
Symbol

Parameter

Value

Units

Rthj-c

Thermal Resistance Junction-case

Max.

1.4

/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

110

/W

Data & specifications subject to change without notice

200823053-1/4

AP85T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

30

BVDSS

Drain-Source Breakdown Voltage

BVDSS/Tj

Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA

0.02

V/

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V, ID=45A

VGS=4.5V, ID=30A

10

VDS=VGS, ID=250uA

VDS=10V, ID=30A

32

VDS=30V, VGS=0V

uA

Drain-Source Leakage Current (Tj=175 C)

VDS=24V, VGS=0V

500

uA

Gate-Source Leakage

VGS=20V

100

nA

ID=30A

33

52

nC

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance
o

IDSS

Drain-Source Leakage Current (Tj=25 C)


o

IGSS

VGS=0V, ID=250uA

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=24V

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

24

nC

Qoss

Output Charge

VDD=15V,VGS=0V

24.5

39

nC

VDS=15V

11

ns

td(on)

Turn-on Delay Time

tr

Rise Time

ID=30A

77

ns

td(off)

Turn-off Delay Time

RG=3.3,VGS=10V

35

ns

tf

Fall Time

RD=0.5

67

ns

Ciss

Input Capacitance

VGS=0V

2700 4200

pF

Coss

Output Capacitance

VDS=25V

550

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

380

pF

Min.

Typ.

Source-Drain Diode
Symbol

Parameter
2

Test Conditions

Max. Units

VSD

Forward On Voltage

IS=45A, VGS=0V

1.3

trr

Reverse Recovery Time

IS=30A, VGS=0V,

28

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/s

10

nC

Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.

2/4

AP85T03GH/J
300

150

T C =25 C

ID , Drain Current (A)

ID , Drain Current (A)

o
T C = 175 C

10V
7.0V
6.0V

250

200

150

100

4.5V

50

V G =4.0V

100

4.5V

V G =4.0V

50

0
0

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

13

2.0

I D =30A
T c =25

I D =45A
V G =10V
Normalized RDS(ON)

11

RDS(ON) (m )

10V
7.0V
6.0V

1.5

1.0

0.5
2

10

-50

25

100

175

T j , Junction Temperature ( o C)

V GS , Gate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance


v.s. Junction Temperature

30

2.5

T j =25 o C

Is (A)

VGS(th) (V)

T j =175 o C

20

1.5

10

0.5

0.2

0.4

0.6

0.8

V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

1.2

-50

25

100

175

T j ,Junction Temperature ( C)

Fig 6. Gate Threshold Voltage v.s.


Junction Temperature
3/4

AP85T03GH/J
f=1.0MHz
14

10000

I D =30A
V DS =15V
V DS =20V
V DS =24V

10

C iss

C (pF)

VGS , Gate to Source Voltage (V)

12

1000

C oss
C rss

100

10

20

30

40

50

60

70

11

16

21

26

31

V DS ,Drain-to-Source Voltage (V)

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

1000

Normalized Thermal Response (Rthjc)

100us
100

ID (A)

1ms
10ms
10

1ms
o

T c =25 C
Single Pulse

DC

DUTY=0.5

0.2

0.1

0.1

0.05

PDM

t
0.02

0 01

Duty factor = t/T


Peak Tj = PDM x Rthjc + T C

Single Pulse

0.01
0.1

10

100

0.00001

0.0001

V DS , Drain-to-Source Voltage (V)

Fig 9. Maximum Safe Operating Area

0.001

0.01

0.1

t , Pulse Width (s)

Fig 10. Effective Transient Thermal Impedance

VG

VDS
90%

QG
4.5V
QGS

QGD

10%
VGS
td(on) tr

td(off) tf

Fig 11. Switching Time Waveform

Charge

Fig 12. Gate Charge Waveform

4/4

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