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RF Device Data

Data on RF transistors and circuits

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RF Device Data

Data on RF transistors and circuits

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M) MOTOROLA

RF DEVICE DATA
VOLUME I

Volume I

Selector Guide

Discrete Transistor
Data Sheets

Case Dimensions

Volume II

Selector Guide

Amplifier Data Sheets

Tuning, Hot Carrier and

PIN Diode Data Sheets

Technical Information

Case Dimensions

Cross Reference and

Sales Offices

MOTOROLA
RF DEVICE DATA
Volume I
Prepared by
Technical Information Center

Extensive changes have been made to the sixth edition of the RF Data Manual. In March, 1988, Motorola
acquired the RFDevices Division ofTRW. The RFproducts manufactured bythe acquired facilities were included

for the first time in the fifth edition of the RF Data Book. During the past 2 years, a consolidation of products
has taken place with the result being the deletion ofa large number of products previously included in the fifth
edition. However, an equally large number of new products has resulted in the data book remaining as a 2
volume set.

Once again, Volume 1 contains all Discrete Transistors (along with the Discrete portion of the RF Selection
guide).All other devices, primarily amplifiers along with tuning diodes, are included in Volume 2. Also in Volume
2 is a greatly expanded section on Applications. The many diverse Application Notes from the TRW facilities

in California and France have been integrated along with the previously available application notes from the
RF facility in Arizona. This data forms one ofthe most comprehensive groups of RF application available in the
industry today.
HOW TO USE THIS RF DATA BOOK:

Note thatall devices in a given section Discrete Transistors, Amplifiers and Tuning Diodes are organized
in conventional alphanumeric order.

If you know the part for which you desire technical data, simply turn tothe appropriate page in Volume 1 or
2. If you are seeking a replacement for a competitor's part, then use the Cross Reference in Volume 2 to find

the Motorola recommended replacement. If you have a requirement for a specified frequency band, then use
the Selector Guide (in both Volumes 1 and 2) to find a suitable part with the desired voltage, output power,
gain or other requisite characteristic.

Although information in these books has been carefully checked, no responsibility for inaccuracies can be
assumed by Motorola. Please consult your nearest Motorola Semiconductorsales office for further assistance
regarding any aspect of Motorola RF Products.

Motorola reserves the right tomake changes without further notice to any products herein toimprove reliability,
function ordesign. Motorola does not assume any liability arising out of the application or use of any product
or circuit described herein; neither does it convey any license under its patent rights nor the rights of others.
Motorola products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, orapplications intended tosupport orsustain life, orfor any other application in
which the failure of the Motorola product could create a situation where personal injury or death may occur.

Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer

shall indemnify and hold Motorola and itsofficers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or

indirectly, anyclaim of personal injury or death associated with such unintended or unauthorized use, even if
such claim alleges that Motorola was negligent regarding thedesign or manufacture ofthe part. Motorola and

<g> are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Employment Opportunity/Affirmative

Action Employer.

Sixth Edition

First Printing
MOTOROLA INC., 1990

Printed in U.S.A.

Previous Printing 1988

..AN Rignts ReServed"

DATA CLASSIFICATION
Product Preview
Data sheets herein contain information on a product under development. Motorola reserves the

right to change or discontinue these products without notice.

Advanced Information
Datasheets hereincontaininformation on new products. Specifications and information are subject
to change without notice.

Formal

For a fully characterized device there must be devices in thewarehouse and price authorization.

Designer's
The Designer's Data Sheet permits the design of mostcircuits entirely from the information pre
sented. Limit curves representing boundaries on device characteristics aregiven to facilitate
"worst case" design.

Designer's, Epicap, MACRO-T, MACRO-X and TMOS are trademarks of Motorola Inc.
Annular Semiconductors patented by Motorola Inc.

MASTER INDEX

Device Number
2N2857

2N3553

2N3866.A

Description
RF Small-Signal Transistor

Page
Number
2-2

High Frequency Transistor

High Frequency Transistors

2-8
2-10

2N3924

RF Power Transistor

2-14

2N3948
2N4427

High Frequency Transistor

High Frequency Transistors
High Frequency Transistor

2-17
2-19
2-23

2N4428

RF Power Transistor

2-25

2N4957, 2N4958, 2N4959

2N5031, 2N5032

High Frequency Transistors

2-27
2-36

2N5108

High Frequency Transistor

2-40
2-44

2N3959, 2N3960

2N5109
2N5160

RF Power Transistor

2-50

2N5179

RF High Frequency Transistor

High Frequency Transistor

2-54
2-60
2-64
2-67
2-70

2N6166

RF Power Transistor
RF Power Transistor
RF Power Transistor
High Frequency Transistors
RF Power Transistor
High Frequency Transistor
RF Power Transistors
RF Power Transistor
RF Power Transistor
RF Power Transistor
RF Power Transistor
RF Power Transistor
RF Power Transistor

2-90
2-97
2-100
2-103
2-106
2-109
2-112

2N6304, 2N6305

High Frequency Transistors

2-116

2N6439
2N6603

RF Power Transistor

2-121

High
High
High
High

2-125
2-129
2-133
2-135

2N5583
2N5641

2N5642
2N5643

2N5835, 2N5836, 2N5837

2N5849

2N5943

2N5944, 2N5945, 2N5946

2N6080
2N6081
2N6082
2N6083
2N6084

2N6604
2N6618

2N6679
2N6985

2N6986

Frequency
Frequency
Frequency
Frequency

Transistor
Transistor
Transistor
Transistor

2-73
2-79
2-83

Push-Pull RF Power Transistor

2-137
2-141

2-1033
2-1047
2-1051

BF432L

High Frequency Transistor

High Frequency Transistor
High Frequency Transistor

BF433
BFR90
BFR91

RF Low Power Transistor

2-1037

High Frequency Transistor

2-145
2-148

BFR92,A
BFR93.A

RF Transistors
RF Transistors

2-151
2-152

BFR96

High
High
High
High

8F430L

BF431L

BFRC96
BFW92A

BFX89

Frequency
Frequency
Frequency
Frequency

Transistor
Transistor
Transistor
Transistor

MOTOROLA RF DEVICE DATA

2-153
2-153
2-161
2-166

MASTER INDEX continued

Page
Device Number
BFY90

BT500
BT500F
JO2015A
JO3037

JO3501, JO3502
JO4036
JO4045
LT1001A
LT1814
LT1817
LT1839

LT2001
LT3005
LT3014
LT3046
LT5817
LT5839

MD4957
MM4018
MM4049

MM8000, MM8001
MM8009
MMBR536L

MMBR571L
MMBRS01L
MMBR911L

MMBR920L
MMBR930L

MMBR931L
MMBR941
MMBR951
MMBR2060L
MMBR2857L

MMBR4957L
MMBR5031L
MMBR5179L
MMC4049
MPS536
MPS571

MPS901
MPS911
MPS1983
MPS3866
MRA0500-19L
MRA0510-50H

MRA0610 SERIES
MRA0610H SERIES

Description
High Frequency Transistor

Number
2-166

RF Bias Source
RF Bias Source
UHF Power Transistor
UHF Power Transistor
UHF Power Transistors
VHF Power Transistor
VHF Power Transistor

2-170
2-171
2-172
2-173
2-174
2-176
2-179

High Frequency Transistor

2-182
2-185
2-187
2-189
2-191
2-195
2-198
2-202
2-206
2-208
2-210

Power Transistor

2-214

High Frequency Transistor

High Frequency Transistors

2-216
2-220

RF Power Transistor

2-222

High Frequency Transistor

High Frequency Transistor
RF Amplifier Transistor
High Frequency Transistor
High Frequency Transistor
RF Amplifier Transistor
RF Amplifier Transistor
High Frequency Transistor
High FrequencyTransistor
RF Amplifier Transistor

2-235
2-241
2-225
2-251
2-226
2-227
2-228
2-927
2-938
2-229

RF Transistor

2-230

RF Amplifier Transistor
RF Amplifier Transistor
RF Amplifier Transistor
High Frequency Transistor
High FrequencyTransistor
High Frequency Transistor
High FrequencyTransistor
High Frequency Transistor
High Frequency Transistor
RF Amplifier Transistor

2-231
2-233
2-234
2-216
2-235
2-241
2-247
2-251
2-247
2-257

UHF
UHF
UHF
UHF

2-258
2-260
2-262
2-268

Power Transistor
Power Transistor
Power Transistors
Power Transistors

MOTOROLA RF DEVICE DATA

Description

Device Number

Page
Number

MRA1000-14L

UHF Power Transistor

MRA1000-3.5L

UHF Power Transistor

2-270

MRA1000-7L

UHF Power Transistor

2-273

MRA1014 SERIES

Microwave Power Transistors

2-278

MRA1014H SERIES
MRA1214-55H
MRA1300-10L

Microwave Power Transistors

Microwave Power Transistor

2-285
2-287

Microwave Linear Power Transistor

Microwave Power Transistors

2-290
2-292

Microwave
Microwave
Microwave
Microwave
Microwave

Power
Power
Power
Power
Power

Transistors
Transistors
Transistors
Transistors
Transistors

2-296
2-298
2-302
2-309
2-312

Microwave
Microwave
Microwave
Microwave

Power
Power
Power
Power

Transistors
Transistors
Transistors
Transistors

2-318
2-325
2-327
2-332

MRAU17 SERIES
MRA1417H SERIES
MRA1600 SERIES
MRA1720 SERIES

MRAL1417 SERIES
MRAL1720 SERIES

MRAL2023 SERIES

MRAL2023-18.H
MRAL2023H SERIES
MRAL2327 SERIES
MRAL2327-12H
MRF134

MRF136,Y
MRF137
MRF138
MRF140
MRF141
MRF141G

MRF148
MRF150
MRF151
MRF151G
MRF154
MRF161

MRF162
MRF163
MRF171
MRF172
MRF174

MRF175GV.GU
MRF175LV.LU
MRF176GV.GU
MRF0211L
MRF221
MRF224
MRF226
MRF227
MRF229

MRF232
MRF233

2-276

Microwave Power Transistor

N-Channel TMOS Broadband RF Power FET
RF Power Field Effect Transistors
N-Channel MOS Broadband RF Power FET
N-Channel MOS Linear RF Power FET
N-Channel MOS Linear RF Power FET
N-Channel Broadband RF Power MOSFET
N-Channel MOS Broadband RF Power FET
N-Channel MOS Linear RF Power FET
N-Channel MOS Linear RF Power FET
N-Channel Broadband RF Power MOSFET
N-Channel MOS Broadband RF Power FET
Power Field Effect Transistor
N-Channel MOS Broadband RF Power FET
N-Channel MOS Broadband RF Power FET
N-Channel MOS Broadband RF Power FET
N-Channel MOS Broadband RF Power FET
N-Channel MOS Broadband RF Power FET
N-Channel MOS Broadband RF Power FET
N-Channel MOS Broadband RF Power FETs
N-Channel MOS Broadband RF Power FETs
N-Channel MOS Broadband RF Power FETs

2-336
2-337
2-345
2-355
2-363
2-368
2-373
2-379
2-384
2-389
2-394
2-400
2-406
2-412
2-420
2-428
2-436
2-444
2-452
2-460
2-467
2-473

High Frequency Transistor

2-480

RF
RF
RF
RF
RF
RF
RF

2-100
2-109
2-484
2-486
2-490
2-494
2-498

Power Transistor
Power Transistor
Power Transistor
Power Transistor
Power Transistor
Power Transistor
Power Transistor

MOTOROLA RF DEVICE DATA

MASTER INDEX continued

Description

Device Number

MRF260
MRF261
MRF262
MRF264

RF
RF
RF
RF
RF
RF
RF
RF

MRF313

High Frequency Transistor

2-531

MRF314.A
MRF315.A

RF
RF
RF
RF
RF
RF
RF
RF
RF
RF

2-533
2-537
2-541
2-545
2-549
2-553
2-557
2-561
2-565
2-569

MRF234
MRF237

MRF240.A
MRF247

MRF316
MRF317
MRF321
MRF323
MRF325
MRF326
MRF327
MRF329
MRF338
MRF340
MRF342
MRF344
MRF390
MRF392
MRF393
MRF401
MRF406
MRF410

MRF421.MP
MRF422.MP
MRF426

MRF427.A
MRF428

MRF429.MP
MRF430
MRF433
MRF448
MRF449A

MRF450.A
MRF454

MRF455.A
MRF464.A
MRF466
MRF475
MRF476
MRF477
MRF479

Power Transistor
Power Transistor
Power Transistors
Power Transistor
Power Transistor
Power Transistor
Power Transistor
Power Transistor

Page
Number

Power
Power
Power
Power
Power
Power
Power
Power
Power
Power

Transistors
Transistors
Transistor
Transistor
Transistor
Transistor
Transistor
Transistor
Transistor
Transistor

2-502
2-506
2-508
2-512
2-515
2-519
2-523
2-527

RF Power Transistor
RF Power Transistor
RF Power Transistor
RF Power Transistor
Push-Pull RF Power Transistor
Push-Pull RF Power Transistor
Push-Pull RF Power Transistor
RF Power Transistor
RF Power Transistor
RF Power Transistor
RF Power Transistors
RF Power Transistors
RF Power Transistor
RF Power Transistors
RF Power Transistor
RF Power Transistors
RF Power Transistor
RF Power Transistor
RF Power Transistor
RF Power Transistor
RF Power Transistors
RF Power Transistor
RF Power Transistors
RF Power Transistors
RF Power Transistor
RF Power Transistor
RF Power Transistor
RF Power Transistor

2-573
2-577
2-581
2-585
2-589
2-593
2-597
2-601
2-604
2-608
2-612
2-616
2-620
2-624
2-628
2-632
2-636
2-640
2-642
2-646
2-648
2-650
2-652
2-654
2-658
2-662
2-666
2-670

RF Power Transistor

2-674

MOTOROLA RF DEVICE DATA

viii

Description

Device Number
MRF485
MRF486

MRF492.A
MRF497

MRF501.MRF502
MRF511
MRF515
MRF517
MRF521
MRF522
MRF524

MRF525
MRF531
MRF534
MRF536
MRF542

MRF543
MRF544
MRF545
MRF546
MRF547

MRF548
MRF549
MRF553
MRF555
MRF557
MRF559

MRF571, MRF572
MRF580.A, MRF581.A
MRF586, MRF587
MRF604
MRF607
MRF627
MRF630
MRF641
MRF644
MRF646
MRF648
MRF650

MRF652.S
MRF653.S
MRF654
MRF660
MRF750
MRF752

MRF754
MRF837

MRF838.A
MRF839,F

RF
RF
RF
RF

Power
Power
Power
Power

Transistor
Transistor
Transistors
Transistor

Page
Number
2-678
2-681
2-684
2-687

High Frequency Transistors

High Frequency Transistor
High Frequency Transistor
High Frequency Transistor
High Frequency Transistor
High Frequency Transistor
High Frequency Transistor
High Frequency Transistor
High Frequency Transistor
High Frequency Transistor
High Frequency Transistor
High Frequency Transistor
High Frequency Transistor
High Frequency Transistor
High Frequency Transistor
High Frequency Transistor
High Frequency Transistor
High Frequency Transistor
High Frequency Transistor

2-690
2-692
2-697
2-700
2-705
2-705
2-705
2-712
2-716
2-216
2-216
2-718
2-720
2-722
2-725
2-729
2-731
2-718
2-720

RF Low Power Transistor

RF Low Power Transistor
RF Low Power Transistor

2-733
2-738
2-742

High Frequency
High Frequency
High Frequency
High Frequency

2-747
2-754
2-764
2-772

Transistor
Transistors
Transistors
Transistors

RF Power Transistor
RF Power Transistor

2-782
2-784

High Frequency Transistor

2-786

RF Power Transistor
RF Power Transistor
RF Power Transistor
RF Power Transistor
RF Power Transistor
RF Power Transistor
RF Power Transistors
RF Power Transistors
RF Power Transistor
RF Power Transistor
High Frequency Transistor
High Frequency Transistor

2-790
2-794
2-798
2-802
2-806
2-810
2-816
2-820
2-824
2-828
2-832
2-836

High Frequency Transistor

2-840

RF Low Power Transistor

RF Power Transistors
RF Power Transistors

2-844
2-850
2-854

MOTOROLA RF DEVICE DATA

MASTER INDEX continued

Description

Device Number

MRF890
MRF891
MRF892
MRF894

RF
RF
RF
RF
RF
RF
RF
RF
RF
RF
RF

MRF898
MRF901
MRF904

RF Power Transistor

2-903

High Frequency Transistor

2-907
2-913

MRF840

MRF841.F
MRF842
MRF844

MRF846
MRF847

MRF873.S

MRF905
MRF911
MRF914
MRF931
MRF941
MRF942
MRF951
MRF952

MRF961
MRF962
MRF965
MRF966
MRF1000MA
MRF1000MB
MRF1002MA
MRF1002MB
MRF10030
MRF1004MA
MRF1004MB
MRF1008MA
MRF1008MB
MRF1015MA
MRF1015MB
MRF1035MA
MRF1035MB
MRF1090MA
MRF1090MB
MRF1150M
MRF1150MA
MRF1150MB
MRF1250M
MRF1325M

Power Transistor
Power Transistors
Power Transistor
Power Transistor
Power Transistor
Power Transistor
Power Transistors
Power Transistor
Power Transistor
Power Transistor
Power Transistor

Page
Number
2-859
2-863
2-869
2-873
2-876
2-880
2-883
2-887
2-891
2-895
2-899

RF Oscillator Transistor

2-917

High Frequency Transistor

2-919
2-922
2-925
2-927
2-933
2-938
2-946
2-153
2-153
2-153

N-Channel
Microwave
Microwave
Microwave
Microwave

2-951

Dual-Gate GaAs FET

Pulse Power Transistor
Pulse Power Transistor
Pulse Power Transistor
Pulse Power Transistor

2-956
2-956
2-960
2-960

Microwave Long Pulse Power Transistor

2-1059

Microwave
Microwave
Microwave
Microwave
Microwave

Transistor
Transistor
Transistor
Transistor
Transistor

2-964
2-964
2-968
2-968
2-972

Microwave Pulse Power Transistor

Microwave Pulse Power Transistor
Microwave Pulse Power Transistor

2-972
2-976
2-976

Microwave
Microwave
Microwave
Microwave
Microwave

2-980
2-980
2-984
2-988
2-988

Pulse
Pulse
Pulse
Pulse
Pulse

Power
Power
Power
Power
Power

Transistor
Transistor
Transistor
Transistor
Transistor

MRF1946.A

Microwave Pulse Power Transistor

Microwave Pulse Power Transistor
RF Power Transistors

2-992
2-996
2-1000

MRF2369

High Frequency Transistor

2-1004

MOTOROLA RF DEVICE DATA

Description

Device Number

Page
Number

MRF2628

RF Power Transistor

2-1009

MRF3866

High Frequency Transistor

2-1013

MRF4070

RF Power Transistor

2-1015

MRF4427

High Frequency Transistor

2-1019
2-1023

RF Power Transistor
RF Power Transistor

2-1025
2-1028

High Frequency Transistor

High Frequency Transistor
High Frequency Transistor

2-705
2-1031
2-1033

MRF5160
MRF5174

MRF5175
MRF5211L
MRF5583
MRF5711L
MRF5812

RF Low Power Transistor

2-1037

MRF5943

High Frequency Transistor

2-1041

MRF8372

RF Low Power Transistor

2-1043

MRF9011L

High
High
High
High

2-1047
2-1051
2-927
2-938

MRF9331L

MRF9411L
MRF9511L
MRF10005
MRFC521
MRFC544

Frequency
Frequency
Frequency
Frequency

Transistor
Transistor
Transistor
Transistor

Microwave Power Transistor

2-1055

MRFC581.A

High Frequency Transistor

High Frequency Transistor
High Frequency Transistor
High Frequency Transistor
High Frequency Transistors

2-705
2-722
2-725
2-754
2-764

MRFC966
MRFQ17

N-Channel Dual-Gate GaAs FET

High Frequency Transistor

2-951
2-1063

MRFQ19

High Frequency Transistor

2-1065

MRW2000 SERIES

Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave

2-1067
2-1074
2-1076
2-1078
2-1080
2-1085
2-1090
2-1093
2-1096
2-1100
2-1103
2-1103
2-1106

MRFC545
MRFC572

MRW2301.F
MRW2304.F
MRW2307.F
MRW3000 SERIES
MRW52001 SERIES
MRW52102 SERIES
MRW52104 SERIES
MRW53001 SERIES
MRW53102 SERIES
MRW53505
MRW53605
MRW54001
PT4572A
PT4579

PT9700B SERIES
PT9730 SERIES
PT9790

PT9798
PTE801
RF1029
RF1030

Power Transistors
Power Transistors
Power Transistors
Power Transistors
Power Transistors
Linear Power Transistors
Linear Power Transistors
Linear Power Transistors
Linear Power Transistors
Linear Power Transistors
Linear Power Transistor
Linear Power Transistor
Linear Power Transistor

High Frequency Transistor

High Frequency Transistor
UHF Power Transistors

2-1110
2-1113
2-1116

VHF
SSB
SSB
UHF
UHF
UHF

2-1123
2-1129
2-1132
2-174
2-1134
2-1136

Power
Power
Power
Power
Power
Power

Transistors
Transistor
Transistor
Transistor
Transistor
Transistor

MOTOROLA RF DEVICE DATA

X
UJ
Q

tn w w * 'In '<n 'co "co "eo

E S S ovc c c c e

BBBoBBBBB
.22
.52 i2 ; w t5 to wot

OOOcOOOOOOOOOOO

XXXXXXXXXX

U.U.U.U.LLU.U.U.U.U.

0.0.0. toO_0-0_0_Q.Q.Q-0-0-Q.Q.

T "

CM * CM

3333333333

xxxVxxxxxxxxxxx

U.U-U-ll.U_U_LLll.U-U-LLU.LI.U.

g co

333Z>>>>>>33333

7Z M

CO CO t- tJ- CO
oomoio

OC CC I- H h-

Description

Device Number

Page
Number

TPM405
TPM425
TPM4040
TPM4100
TPM4130
TPV364
TPV375
TPV385
TPV387
TPV394A
TPV590
TPV591
TPV593
TPV595A

UHF Power Transistor

UHF Power Transistor
UHF Power Transistor
UHF Power Transistor
UHF Power Transistor
VHF Linear Power Transistor
VHF Linear Power Transistor
VHF Linear Power Transistor
VHF Linear Power Transistor
VHF Linear Power Transistor
UHF Linear Power Transistor
UHF Linear Power Transistor
UHF Linear Power Transistor
UHF Linear Power Transistor

2-1268
2-1272
2-1274
2-1277
2-1278
2-1281
2-1284
2-1287
2-1289
2-1291
2-1294
2-1297
2-1300
2-1303

TPV596A
TPV597
TPV598
TPV657
TPV693
TPV695A
TPV695B

UHF
UHF
UHF
UHF
UHF
UHF
UHF
UHF
VHF
UHF
UHF
UHF
UHF
UHF

2-1307
2-1309
2-1312
2-1314
2-1319
2-1320
2-1322
2-1323
2-1324
2-1329
2-1331
2-1334
2-1337
2-1339

TPV698
TPV3100
TPV5051
TPV5055B
TPV7025

TPV8100B
TPV8200B

Linear Power Transistor

Linear Power Transistor
Linear Power Transistor
Linear Power Transistor
Linear Power Transistor
Linear Power Transistor
Linear Power Transistor
Linear Power Transistor
Linear Power Transistor
Linear Power Transistor
Linear Power Transistor
Linear Power Transistor
Linear Power Transistor
Linear Power Transistor

MOTOROLA RF DEVICE DATA

xiv

Volume I

Selector Guide

1-1

Table of Contents

Page
Number
RF Power TMOS FETs
To 150 MHz HF/SSB

1-3
1-3

To 225 MHz VHF AM/FM

To 500 MHz UHF AM/FM

1-3

RF Power Bipolar Transistors

1.5-30 MHz, HF/SSB

14-30 MHz, CB/Amateur Band
27-50 MHz, Low-Band FM Band

1-4
1-4
1-5

VHF
30-200 MHz Band
66-88 MHz Band

1-5
1-6

88-108 MHz, FM Broadcast Band

1-6

136-174 MHz High Band

225 MHz, Ultra High Band

1-6
1-7

UHF

100-400 MHz Band

100-500 MHz Band
500-1000 MHz Band
400-512 MHz Band

1-8
1-8
1-9
1-9

800 MHz

806-960 MHz Band

Microwave

1-10

L-Band Pulse Power

1-11

L-Band Long Pulse Power

1-12

2 GHz Narrowband CW
2.3 GHz Narrowband CW
3 GHz Narrowband CW
0.6-2.7 GHz Broadband Common Base

1-13
1-13
1-13
1-14

L-Band CW, Narrowband, Common Base

1-15

Power Oscillators

1-15

Linear

To 1 GHz, Class A

VHF Ultra Linear for TV Applications

UHF Ultra Linear for TV Applications

1-15
1-16
1-16

Microwave Linear Power

Bias Devices

1-17
1-17

RF Small-Signal Transistors

Selection by Package

1-18

Plastic SOE Case

Ceramic SOE Case
Metal Can

1-18
1-20
1-21

Low-Noise

1-23

CATV, MATV and Class A Linear

1-24

High Voltage
High-Speed Switches

1-25
1-26

UHF and Microwave Oscillators

1-26

High Reliability (MIL) Transistors

Complementary Devices

1-26
1-26

MOTOROLA RF DEVICE DATA

1-2

RF Power TMOS FETs

Motorola RF Power MOSFETs, (trademark TMOS), are constructed using a planar process to enhance manufacturing
repeatability. Theyare N-channel field effect transistors with an oxide insulated gate which controls vertical current flow.
Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced thermal stability
and lower noise. The FETs listed in this section are specified for operation in RF Power Amplifiersand are grouped by frequency
range of operation and type of application. Arrangement within each group is by order of first voltage then increasing output
power.

TO 150 MHz HF/SSB

For military and commercial HF/SSB fixed, mobile, and marine transmitters.

Device

Typical IMD

Gps

Pout
Output Power

Input Power
Typical

Gain dB @

Watts

30 MHz

d3dB

dn dB

Typical

"JC
c/w

Package/Style

VDD = 28 Volts

I MRF138

| MRF140

0.6

-30

-60

1.5

211-07/2

150

4.7

-60

0.6

211-11/2

Vqd = 50 Volts
MRF148

0.5

-35

-60

1.5

211-07/2

MRF150

150

2.9

-32

-60

0.6

211-11/2

MRF153

300

-25

MRF154

600

-25

0.25

368-01/2

0.13

368-01/2

TO 225 MHz VHF AM/FM

For VHF military and commercial aircraft radio transmitters.

Device

Pout
Output Power

Input Power
Typical

Gps (Typ)/Freq.

Typical

OJC

Watts

dB/MHz

Efficiency %

c/w

Package/Style

VDD = 28 Volts
MRF134

0.2

14'150

MRF136

0.38

16/150

3.2

211-07/2

MRF136Y

1.2

14/150

1.8

319B-01/1

MRF137

0.75

16/150

1.8

211-07/2

MRF141

150

10/175

0.6

211-11/2

MRF141G

300

10/175

0.35

MRF171

211-07/2

1.4

15/160

1.5

MRF172

4.7

12.3/150

0.8

MRF174

125

8.3

11.8/150

0.65

211-11/2

MRF175GV

200

14/225

0.44

375-01/2

MRF175LV

100

14/225

0.65

333-04/1

211-07/2
211-11/2

VDD = 50 Volts
MRF151

150

7.5

13/175

0.6

211-11/2

MRF151G

300

7.5

16'175

0.35

375-01/2

MRF176GV

200

17/225

0.44

375-01/2

79-057

TO 500 MHz UHF AM/FM

For VHF/UHF military and commercial aircraft radio transmitters.

VDD = 28 Volts
MRF158R(1)
MRF160R(1)

0.02

20/400

0.04

20/400

79-05/7

MRF161

0.4

13.5/400

244-04/3

MRF162

0.65

13.6/400

3.5

244-04/3

MRF163

244-04/3

1.6
0.4

12/400

MRF166C(1)
MRF164W(1)

17/400

2.5

319-05/3

0.4

17/400

1.5

412-01/1

MRF175GU

150

9.5

12/400

0.44

375-01/2

MRF175LU

100

10/400

0.65

333-04/1

VDD - 50 Volts
MRF176GU

375-01/2

(1) To be introduced

I New introduclions

MOTOROLA RF DEVICE DATA

1-3

RF Power Bipolar Transistors

Motorola's broad fine of bipolar RF power transistors are characterized for operation in RF power amplifiers. Typical applications
are in military and commercial landmobile, avionics and marine radio transmitters. Groupings are by frequency band and type
of application. Within each group, the arrangement of devices is by major supply voltage rating, then in the order of increasing
output power. Details of package dimensions begin on Page 62. Alldevices are NPN polarity except where otherwise noted.

HF Transistors
1.5-30 MHz, HF/SSB
Designed for broadband operation, these devices feature specified Intermodulation Distortion at rated power output. Applications
include mobile, marine, fixed station, and amateur HF/SSB equipment, operating from 12.5,13.6, 28 or 50 volt supplies.
Pout
Output Power
Device

Watts

GPE (MIn)

Input Power
Watts (Max)

Power Gain

0JC

dB @ 30 MHz

c/w

Package/Style

0.1

17.5

1.2

221A-04/1
221A-04/1

0.125

8.6

211-07/1

0.95

5.9

221A-04/2

1.25

2.2

1.25

211-07/1
221A-04/2

211-11/1

VCc = 12.5 or 13.6 Volts

MRF476
MRF475
MRF433
MRF479
MRF406

3
12
12.5
15
20

PEP/CW
PEP/CW
PEP/CW
PEP/CW
PEP/CW

MRF477

40 PEP/CW

MRF421

100 PEP/CW

0.6

10
10
15
25
25
40
40
80
80
150

PEP/CW
PEP/CW
PEP/CW
PEP/CW
PEP/CW
PEP/CW
PEP/CW
PEP/CW
PEP/CW
PEP/CW

0.5

4.4

211-07/1

0.5

4.4

145A-09/1
221A-04/1

25
75
150
150
150
250
600

PEP/CW
PEP/CW
PEP/CW
PEP/CW
PEP/CW
PEP/CW
PEP/CW

Vqc = 28 Volts
MRF410
MRF410A
MRF485
MRF426

MRF401
MRF466
MRF486
MRF464
MRF464A
MRF422

1.5

3.4

0.16

2.5

211-07/1

1.25

3.5

145A-09/1

1.25

211-07/1

1.25

221A-04/2

2.53

0.7

211-11/1

2.53

0.7

145A-10/1

0.6

211-11/1

0.4

2.2

211-11/1

2.4

15(3)

211-07/1

7.5

0.5
0.8

211-11/1

7.5
4.8

15(3)

0.5

211-11/1

15.7

0.6

211-11/1

0.2

368-01/1

Vqc = 50 Volts
MRF427

PT9798
MRF42B
MRF429
PT9790
MRF448
MRF430

211-11/1

14-30 MHz, CB/AMATEUR BAND

These HF transistors are designed for economical, high-volume use in CW, AM and SSB applications.
Vcc = 12.5 or 13.6 Volts
MRF476

0.1

17.5

221A-04/1

MRF475

0.4

221A-04/1

1.5

211-07/1

1.5
1

MRF450
MRF450A
MRF455
MRF455A
MRF454

145A-09/1
211-07/1
145A-09/1

0.7

211-11/1

MOTOROLA RF DEVICE DATA

1-4

HF TRANSISTORS (continued)

27-50 MHz, LOW-BAND FM BAND

For use in the FM "Low-Band," for Mobile communications.
Pout
Output Power
Device

Gpe (MIn)
Power Gain

fljC

Watts

Pin
Input Power
Watts (Max)

dB @ 50 MHz

c/w

Package/Style

VCc = 12.5 or 13.6 Volts

MRF475
MRF497

0.4

221A-04/1

221A-04/2

MRF492

5.6

0.7

211-11/1

VHF Transistors
30-200 MHz BAND

Designed forMilitary Radio and Commercial Aircraft VHF bands,these 28-volt devicesinclude the all-gold metallized MRF314/
15/16/17 high-reliability series.

Pin
Input Power

Gpe (Min)/Freq.

Output Power

Power Gain

0JC

Watts

Watts (Max)

dB/MHz

c/w

Pout

I
Device

Package/Style

Vqc = 28 Volts
2N3553

2.5

0.25

10/175

79-04/1

PT9730

0.2

13/175

17.5

2N5641

8.4/175

11.6

MRF340
PT9732
PT9734

0.4

13/136

11.6

0.5

12/175

8.8

145D-01/1
144B-05/1
221A-04/2
145D-01/1

11.8/175

5.8

145D-01/1

2NS642

5.9

145A-09/1

3
1.9

8.2/175

MRF342

11/136

3.2

PT9731
MRF314
MRF314A

2.5

10/175

3.9

221A-04/2
145D-01/1

10/150

2.2

211-07/1

10/150

2.2

2N5643

6.9

2.9

145A-09/1
145A-09/1

MRF315
MRF315A
PT9733
MRF344

5.7

7.6/175
9/150

1.6

211-07/1

5.7

9/150

1.6

145A-09/1
145D-01/1
221A-04/2

7/175

2.1

6/136

MRF316 (4)
MRF317 (4)

10/150

0.8

316-01/1

100

12.5

9/150

0.65

TP9386

150

10/175

0.7

316-01/1
316A-01/1

(4) Internal Impedance Matched

MOTOROLA RF DEVICE DATA

1-5

VHF TRANSISTORS (continued)

66-88 MHz BAND

Power output chains up to 25 watts output are obtainable in the international VHF FM
are optimized.

'Mid-Band" for which these transistors

Gpe (Min)

Pout
Output Power

Pin
Input Power

Power Gain

0JC

Watts

Watts (Max)

tfB/MHz

C/W

Package/Style

MRF229

1.5

0.15

10/90

MRF232
MRF233

7.5

0.95

9/90

8.8

79-05/5
145A-09/1

1.5

10/90

3.5

14SA-09/1

MRF234

2.8

9.5/90

2.5

145A-09/1

Device

Vqc = 12.5 Volts

88-108 MHz, FM BROADCAST BAND

These parts are designed forsolid state transmitterapplicationsin the FMbroadcast band. They feature diffused ballast resistors
and gold metallization that enhances long term reliability.
Pout
Output Power
Device

Gpe (Min)

Pin
Input Power
Watts (Max)

Power Gain
dB/MHz

10.3/108

1.5

211-11/1

150

9.2/108

0.75

211-11/1

20/108

0.35

375-01/2

Watts

fljC
c/w

Package/Style

VCc - 28 Volts Bipolar

TP9380
TP9383

VCC = 50 Volts TMOS

iL.:Mfr";;~

300

136-174 MHz HIGH BAND

The "workhorse" VHF FM High-Band is served by Motorolawith the broadest range of devices and package combinations in
the industry.

Watts

Pin
Input Power
Watts (Max)

2N4427

MRF604

MRF553

Pout
Output Power

Gpe (Min)
Power Gain

OJC

dB @ 175 MHz

*C/W

0.1

26-03/1

1.5

0.11

11.5

MRF607

1.75

0.12

11.5

317D-02/2
79-04/1

2N6080
MRF220
MRF237

0.25

14.6

0.25

14.6

0.25

79-05/5

0.5

14.6

221A-04/2

145A-09/1
221A-04/2

Device

| Package/Style

VCc = 12.5 Volts

MRF260
MRF212
MRF261
2N6081

4.7

5.2

3.5

6.3

5.9
5.7

1.25

79-04/1

145A-09/1
211-07/1

145A-09/1

(continued)
^

New introductions

MOTOROLA RF DEVICE DATA

1-6

VHF TRANSISTORS (continued)

136-174 MHz, HIGH BAND (continued)

Pout

Gpe (Min)

Pin
Input Power
Watts (Max)

Power Gain

fljc

Watts

dB @ 175 MHz

C/W

Package/Style

MRF221
MRF262

3.5

6.3

5.7

211-07/1

3.5

6.3

4.7

221A-04/2

MRF2628
TP2317

0.95

244-04/1

2.2

145D-01/1

6.2

145A-09/1

Output Power

Vcc = 12.5 Volts continued

2N6082
TP2325
2N6083
MRF238
MRF239
MRF264

9.1

5.2

2.4

221A-04/2

1.6

1.8

211-07/1
145A-09/1

145D-01/1

6
6
8.1

6.2
5.7

3.7

MRF1946
MRF1946A
TP2330
TP2330F

30
30
30
30
30
30

TP2335

2N6084

MRF224
MRF240
MRF240A

MRF4070 (4)
MRF247 (4)

2.7
2.2
2.7
2.7
2.7

25
30

2.2

3.8

2.8
14.3

4.5

2.2
2.2
1.8

14.3

4.5

2.2

145D-01/1
145A-09/1
14SA-09/1
145A-09/1

211-07/1

1450-01/1
145A-09/1
211-07/1
145A-09/1

2.2

211-07/1

1.8

316-01/1

0.7

316-01/1

225 MHz, ULTRA HIGH BAND

Specifically designed andcharacterized for the225MHz band, thesedevices eliminate theguesswork required when adapting
175 MHz characterized devices to this application.
Pout
Watts

Pin
Input Power
Watts (Max)

0.15

Output Power
Device

GpE(MIn)
Power Gain

dB @ 225 MHz

C/W

8.2
13.5

79-04/1

0.13

21.8

79-05/5

Package/Style

Vqc = 12.5 Volts

MRF207
MRF227
MRF208
MRF226
TP2033
TP2037

4.7

1.6

3.9

145A-09/1
145A-09/1
145D-01/1

4.5

8.9
8.9

3.9
2.2
2.2

145D-01/1

(4) Internal Impedance Matched

MOTOROLA RF DEVICE DATA

1-7

UHF TRANSISTORS (continued)

400-512 MHz BAND (continued)
GpE (Mln)/Freq.

Pout
Output Power

Pin
input Power

Watts

Power Gain
dB/MHz

TP5002

1.5

0.075

TP5002S
TP5015

1.5

0.075

1.34

11/470

67470:

Device

fljC
C/W

Package/Style

13/470

244C-01/1

13/470

Vcc = 24 Volts

TRS025
TP5040
TP5060

28' : -J

249A-01/1
319-06/2

....

319-06/2 -''"

9/470

39S-01/1

11.2

6.5/470

0.7

827-01/1

TP5050

11.2

6.5/470

1.5

316A-01/1

TP5060
MRF338

13.4

6.5/470

0.7

827-01/1

7.3/470

0.7

333-04/1

Vcc = 28 Volts

800 MHz Transistors

806-960 MHz BAND

Designedspecifically forthe 800 MHzmobileradio band,types MRF840 through847 offersuperiorgainand ruggedness, using
the uniqueCS-12 package,whichminimizes common-element impedance, and thus maximizes gainand stability. Devices are
listed for mobile and base station applications.
Output Power

Pin
Input Power

Watts

Pout
Device

Gp (M!n)/Freq.
Power Gain
dB/MHz

C/W

Package/Style

0JC

Vcc = 12-5 Volts Class C (Except as Noted)

MRF559 (8)
MRF581 (8)
MRF837(8)
MRF8372 (8)
TP3009 (8)
TP3009S(8)
MRF838 (8)
MRF838A(8)
MRF5S7(8)
TP3010 (8)
TP3010S (8)
MRF839 (8)
MRF639F(8)
TP3013 (8)
MRF840 (4)

. TP30M$K9);

0.5

0.08

8/870

317-01/2

0.6

0.06

10/870

317-01/2

0.75

0.11

8/870

317-01/1

0.75

0.11

8/870

0.75

0.14

0.75

0.14

7.5/900
7.5/900

0.22

6.5/870

0.22

6.5/870

1.5

0.23

8/870

1.5

0.3

7/900

1.5

0.3

7/900

0.46

8/870

0.46

8/870

0.71

7.5/900

TP3015(9)
MRF873 (4)
MRF842 (4)
MRF844 (4)
MRF846 (4)
MRF847 (4)

10
18
15
20
30
40
45

319-06/1

6/870

7/900

3.2

7.5/915

2.5

319-06/2

319-06/1

6/870

1.5

5.2/870

1.5

4.3/870

1.2

319-06/1
319-06/1
319-06/1

4.5/870

319-06/1

- '2

(4) Internal Impedance Matched

(8) Common Emitter
(9) Common Emitter Class AB

305B-01/1
305C-01/1
305A-01/1
319-06/2
319-06/2

3.1

2.5

751-02/1
305B-01/1

305C-01/1
305A-01/1
305-01/1
317D-02/2

New introductions

MOTOROLA RF DEVICE DATA

1-10

319-36/2"

800 MHz TRANSISTORS (continued)

806-960 MHz BAND (continued)

Pin
Input Power

Gp (Min).'Freq.
Power Gain

OJC

Class

Watts

dB/MHz

-c/w

Pout
Output Power
Device

Watts

Package/Style

Vcc = 24 Volts
MRF890

0.25

9/900

305-01/1

TP3019

ABor A

0.25

9/960

305-01/1

9/960

ABor A

0.25

305A-01/1

MRF891 (4)

0.63

9/900

319-06/2

TP3021

ABor A

10/960

319-06/2

MRF892 (4)
MRF894 (4)

8.5/900

3.5

319-06/1

7/900

1.5

319-06/1

MRF89S (4)

7.900

333A-04/1

244C-01/1

TP3019S

Vcc = 26 Volts
TP3020A

2.2

0.28

9960

TP3005
TP3004
TP3022A
TP3030

ABor A

0.57

319-06/2

ABor A

0.63

8.5/960
9/900

319-06/2

2.12

8.5/960

319-06/2

3.65

8/900

2.5

319-06/2

TP3031

8/960

2.5

319-06/2

TP3024A (6)

35.5

6.35

7,5/960

395-01/1

TP3040 (4)
TP3061 (4)
TP3060 (4)
TP3062 (6)

7.11

7.5'960

1.8

319-06/2

7.13

8/960

1.2

333A-02/2

10.67

7.5/900

1.2

333A-02/2

7/960

1.2

398-01/1

Microwave Transistors
L-BAND PULSE POWER

These products are designed to operate in short pulse width, 10 us, low duty cycle, 1%, power amplifiers operating in the 960
to 1215 MHz band. All devices have internal impedance matching. The prime application is avionics equipment for distance
measuring (DME), area navigation (TACAN) and interrogation (IFF). All devices offered with hermetic option.

Device

Vcc = 18 Volts -

Gp (Min)

Pout
Output Power

Pin
Input Power

Power Gain

0JC

Watts

dB (a 1090 MHz

"C/W

MRF1000MA

0.2

0.02

332-04/2

MRF1000MB

0.2

0.02

332A-03/2

MRF1000MC

0.2

0.02

361A-01/2

(4) Internal Impedance Matched

(6) Internal Impedance Matched Push-Pull Transistors

Package/Style

Class A & AB Common Emitter

New introductions

MOTOROLA RF DEVICE DATA

1-11

MICROWAVE TRANSISTORS (continued)

L-BAND PULSE POWER (continued)

Device

Pout
Output Power

Gp (Min)

Input Power

Power Gain

fljC

Watts

dB @ 1090 MHz

c/w

0.2

Package/Style

Vqc = 35 Volts Class B & C Common Base

MRF1002MA

MRF1002MB
MRF1002MC
MRF1004MA
MRF1004MB
MRF1004MC
MRF1008MA
MRF1008MB

MRF1008MC

332-04/1

0.2

332A-03/1

0.2

361A-01/1

0.4

332-04/1

0.4

332A-03/1

0.4

361A-01/1

0.8

332-04/1

0.8

332A-03/1

0.8

361A-01/1

Vcc = 50 Volts Class C Common Base

MRF1015MA

1.5

332-04/1

MRF1015MB
MRF1015MC
MRF1035MA
MRF1035MB
MRF1035MC
MRF1090MA

1.5

332A-03/1

1.5

361A-01/1
332-04/1

3.5

332A-03/1

3.5

361A-01/1

0.6

332-04/1

0.6

332A-03/1

0.6

361A-01/1

0.3

336-03/2

MRF1090MB
MRF1090MC
MRF1150M

150

10
10
10
7.8

MRF11S0MA

150

7.8

0.3

332-04/1

MRF11S0MB

150

7.8

0.3

332A-03/1

MRF1150MC
MRF1250M

150

7.8

0.3

250

0.15

MRF1325M

325

0.15

361A-01/1
336-03/2
336-03/2

L-BAND LONG PULSE POWER

These products are designed for pulse power amplifier applications in the 960 to 1215 MHz frequency range. They are capable
of handling up to 10 /is pulses in long pulse trains resulting in up to a 50% duty cycle over a 3.5 millisecond interval. Overall
duty cycle is limited to 25% maximum. The primary applications for devices of this type are military systems, specifically JTIDS
and commercial systems, specifically Mode S. Package type is hermetic.

Device

VCc = 28 Volts -

Power Gain

Watts

dB @ 1215 MHz

c/w

Package/Style

0.71

8.5

336E-02/1

11.2

9.5

120

0.6

- Class C Common Base

MRF10030

MRF10120

Pin
Input Power

Watte

- Class C Common Base

MRF10005

VCc = 36 Volts -

Gpe (Min)

Pout
Output Power

New introductions

MOTOROLA RF DEVICE DATA

1-12

376A-01/1

;3ssbT/i;'"j

MICROWAVE TRANSISTORS (continued)

2 GHz NARROWBAND CW

The MRW2000 Series of NPN Silicon microwave power transistors are designed for common base service in amplifier or
oscillator applications in the 1 to 2.3 GHz frequency range.
Pout

GpB (Min)

Output Power

input Power

Power Gain

8JC

Watts

dB @ 2 GHz

C/W

Package/Style

Device

Vcc = 28 Volts Class B & C Common Base

MRW2001 (10)
MRW2003 (10)
MRW2005 (10)
MRW2010 (10)
MRW2015(10)
MRW2020 (10)

0.13

0.48

15
8.5

0.8

3.8

3.5

328F-01/2
328F-01/2
328F-01/2
328F-01/2
393-01/1

5.2

393-01/1

2.3 GHz NARROWBAND CW

The MRW2300 Series are common-base configured transistors in hermetic packages with guaranteed performance charac
teristics at 2.3 GHz. They feature diffused ballast resistors and gold metallizationfor extreme ruggedness and reliability. All are
available with TX equivalent screening.
Pout

GpB (Min)

Output Power

Pin
Input Power

Power Gain

0JC

Watts

dB @ 2.3 GHz

C/W

Package/Style

MRW2301
MRW2304

1.5

0.24

0.64

35
17

328F-01/2

MRW2307

8.5

328F-01/2

Device

Vcc = 20 Volts
I

328F-01/2

3 GHz NARROWBAND CW

The MRW3000 Series are the industry's first 100% VSWR tolerant 3 GHz devices. They are common-base configured in
hermetic packages (with or without flanges) and rated for 28 volt operation.

Device

Gpb (Min)

Pout
Output Power

Pin
Input Power

Power Gain

0JC

Watts

dB @ 3 GHz

C/W

Package/Style

328F-01/2
328F-01/2
328F-01/2

VCc = 28 Volts
MRW3001

0.2

MRW3003

0.75

MRW3005

1.6

8.5

(10) Availablein Hangetess package (Case 328-02/1) by placing suffix"F" after device number

MOTOROLA RF DEVICE DATA

1-13

MICROWAVE TRANSISTORS (continued)

0.6-2.7 GHz BROADBAND COMMON BASE

The MicRoAmp transistor employs MOS capacitors and other matching elements to transform the input, and in some devices,
the output impedance to a more manageable level prior to the point where package parasitics can reduce the bandwidth
capability (U.S. Patent 3,713,006). These devices are assembled in common-base configuration and include an all-gold metal
system and diffused ballast resistors for long life.Those epoxy-sealed devices followed by Note 11 are also available in hermetic
packages and TX equivalent.

Device

Instantaneous

Min

Frequency
Range
FL-FH (MHz)

Output

Min

Power

Gain

OJF

Watts

c/w

Package/Style

VCC = 22 V
2

394-01/1

1400-1700

7.4

394-01/1

1400-1700

7.4

4.5

394-01/1

1400-1700

2.5

394-01/1

1700-2000

7.5

394-01/1

1700-2000

6.5

394-01/1

1700-2000

6.5

4.5

394-01/1

MRAL1720-20

1700-2000

2.5

MRAL2023-1.5(11)
MRAL2023-3(11)
MRAL2023-6(11)
MRAL2023-12(11)
MRAL2023-18(11)

2000-2300

1.5

394-01/1

2000-2300

394-01/1

2000-2300

6.8

394-01/1

2000-2300
2000-2300

6.8

4.5

394-01/1

6.5

2.5

394-01/1

MRAL2327-1.3

2300-2700

1.3

5.5

394-01/1

MRAL2327-3
MRAL2327-6

2300-2700

6.6

394-01/1

2300-2700

394-01/1

MRAL2327-12(11)

2300-2700

4.5

394-01/1

MRAL1417-2
MRAL1417-6
MRAL1417-11
MRAL1417-25
MRAL1720-2
MRAL1720-5
MRAL1720-9

1400-1700

394-01/1

Vcc = 28 Volts
MRA0610-3(11)
MRA0610-9(11)
MRA0610-18A(11)
MRA0610-40A

MRA1014-2(11)
MRA1014-6(11)
MRA1014-12(11)
MRA1014-3S
MRA1214-5SH

MRA1300ylOL
MRA1417-2(11)
MRA1417-6(11)
MRA1417-11 (11)

600-1000

7.8

600-1000

7.8

394-01/1

600-1000

7.8

394-01/1

600-1000

2.5

394-01/1

1000-1400

8.2

394-01/1

1000-1400

7.4

394-01/1

1000-1400

7.8 -

1000-1400

1200-1400

6.5

.. 1.0

SOOrlSOO . ^

394-01/1

2.5

394-01/1

1.4

402-01/1

fcl......

. ..._J38<mw: :

1400-1700

7.4

394-01/1

1400-1700

7.4

4.5

394-01/1

MRA1417-25A

1400-1700

2.5

394-01/1

MRA1720-2
MRA1720-5
MRA1720-9

1700-2000

7.5

394-01/1

1700-2000

6.5

1700-2000

6.5

4.5

394-01/1

MRA1720-20

1700-2000

2.5

394-01/1

(11) Hermetic package (393-01/1) is available by placing suffix "H" after device number

4.5

New introductions

MOTOROLA RF DEVICE DATA

1-14

394-01/1

MICROWAVE TRANSISTORS (continued)

L-BAND CW, NARROWBAND, COMMON BASE

The MRA1600 Series microwave power transistors is primarily intended for large-signal output and driver amplifier stages for
satellite up/down links. Each is designed for Class C, common base amplifier applications.
Instantaneous

Min

Frequency
Range

Output

Min

Power

Gain

FL-FH (MHz)

Watts

c/w

Device

Package/Style

Vqc = 28 Volts
MRA1600-2

1600-1660

8.4

MRA1600-13

1600-1660

7.6

4.5

394-01/1

MRA1600-30

1600-1660

2.5

394-01/1

POWER OSCILLATORS

These oscillator devices are common collector configuration with diffused ballast resistors, gold metallization and hermetic
packages to provide high reliability in severe environmental conditions. Each is fully characterized for power oscillator
applications.
Output Power Watts/(<i Freq. GHz

Operating
Conditions

VCE"C
Device

V/mA

Minimum

Typ (ii Low F

Typ @ Mid F

Typ (S High F

Package/Style

TP62601
TP62602

20/220

1.25 2

1.85/2.5

1.35/2

0.85'3

20/440

2.5/2

2/2.5

1.3/3

328F-01/3
328F-01/3

TP63601

20/120

0.6/2.3

0.75/2.3

0.5/2.8

0.28/3.3

328F-01/3

TP63602

20/230

1.2/2.3

1.52.3

1/2.8

0.55/3.3

328F-0V3

0.35/4

0.15'5

328F-01/3

0.65/4

0.15/5

328F-01/3

TP64601

20 120

0.3/4

0.55.-3

TP64602

20/240

0.55/4

1.2/3

III

Linear Transistors
The following sections describe a wide variety of devices specifically characterized for linear amplification. Included are low
power and high power parts covering frequencies from 100 MHz to 4 GHz.

TO 1 GHz, CLASS A
These devices offer a selection of performance and price for linear amplification to 1 GHz. The "MRA" prefix parts are input

matched and feature high overdrive and extreme ruggedness capability.

P0 @ 1 dB
Comp. Point

Gss (Min)/Freq.
Small Signal Gain

OJC

Watts

dB/MHz

c/w

Package/Style

3.5

10/1000

19/0.6

145D-01/1

9/1000

19/1.2

145D-01/1

MRA1000-14L

8/1000

19/2.4

2.1

145D-01/1

MRA0500-19L

8 500

19/3.5

1.5

145D-01/1

244A-01/1

3.5

244A-01/1

3.5

244A-01/1

Device

Vcc = 19 Volts
MRA10O0-3.5L
MRA1000-7L

Vcc = 25 Volts

RF1029

1.5

8/1000

RF1030

7.5/1000

RF1031

4.5

7/1000

RF1032

6.5/1000

New introductions

MOTOROLA RF DEVICE DATA

1-15

LINEAR TRANSISTORS (continued)

VHF ULTRA LINEAR FOR TV APPLICATIONS

The following devices have been characterized forultra-linear applicationssuch as low-powerTV transmitters in Band III. Each
features diffused ballast resistors and an all-gold metal system to provideenhanced reliability and ruggedness.
Gp (Mln)ZFreq.
Device

Pref

Power Gain

Watts

dB/MHz

3 Tone

IMD (12)

C/W

Package/Style

244C-01/1

Vcc = 28 Volts
TPV394A
TPV364
TPV385
TPV375
TPV387
TPV376
TPV3100
TPV387
TPV3100

15/225

-58

2.5

10/225

-54

145D-01/1

14/225

-53

1.5

316A-01/1

8/225

-51

1.5

211-11/1

13/225

-50

316A-01/1

7.5/225

-53

14/225

-51

0.8

827-01/1

90 (13)
100(13)

10/225

316A-01/1

13/225

0.8

827-01/1

250(13)

13/225

0.35

375-01/2

Vcc = 50 Volts TMOS

TPV1325B

UHF ULTRA LINEAR FOR TV APPLICATIONS

The following devices have been characterized for ultra-linearapplications such as low-power TV transmitters in Band IV and
V. Each features diffused ballast resistors and an all-goldmetal system to provide enhanced reliability and ruggedness.
Gp (MIn)/Freq.
Device

3 Tone

IMD (12)

Pref

Power Gain

Watts

dB/MHz

C/W

Package/Style

fljC

Vcc = 20 Volts
TPV590

0.25

14/860

-58

TPV591

0.5

13/860

-58

TPV596

0.5

-58

-60

305B-01/1
305B-01/1
244C-01/1
244C-01/1
244C-01/1

TPV597

11.5/860
10.5/860

TPV598

7/860

Vcc = 25 Volts
TPV693
TPV593
TPV698
TPV657
TPV595A

1.8

9.5/860

-60

244C-01/1

8.5/860

-60

244C-01/1

8.5/860

-54

6.2

244C-01/1

8/660

-58

2.5

8.5/860

-47

2.5

395-01/1

TPV695A

9.5/860

-47

2.5

395-01/1

-45

TPV7025
TPV8100B

8.5/860

110

9/860

30(13)

8.5/860

50(13)
50(13)
180 (13)

6.5/860

827-01/1

1.5

398-01/1

0.6

398-01/1

Vcc = 26 Volts
TPV695B

395-01/1

VCc = 28 Volts
TPV5051
TPV5055B

TPV8200B

(12) Vision Carrier: -8 dB; Sound Carrier: -7 dB. Sideband Carrier:

(13) Output power at 1 dB compression in Class AB

1.8

395-01/1

7/860

1.5

398-01/1

7.5/860

0.4

397-01/1

-16dB

MOTOROLA RF DEVICE DATA

1-16

LINEAR TRANSISTORS (continued)

MICROWAVE LINEAR POWER

Common emitter microwave devices are offered for a wide variety of uses in small and medium signal, Class A, AB and C
applications up to 4 GHz.The use of all-gold metalsystems, diffused ballastresistorsand hermeticpackagingresults in devices
that display excellent reliability even in military environment. Manypart types are available with off-the-shelf TX equivalent
screening.

Device

Gss (Min) @ Freq.

Small Signal Gain

-30 dB

Emitter

Comp.

Psat

IMD

Current

dB/GHz

Watts

1dB

Package/Style

Vce = 20 V
MRW52001
MRW52101
MRW52201
MRW52401

MRW52501 (14)
MRW52601 (14)
MRW52102
MRW52202
MRW52402

672

1.8

2.5

1.5

220

400-01/1

6/2

1.8

2.5

1.5

220

5/2

1.8

2.5

1.5

220

572

1.8

2.5

1.5

220

328E-01/2
401A-01/1
328G-01/1

5/2

1.8

2.5

1.5

220

401-01/1

6/2

1.8

2.5

1.5

220

328F-01/1

672

3.6

440

328E-01/2

5/2

3.6
3.6

440

401A-01/1

5/2

440

326G-01/1

MRW52502 (14)

5/2

3.6

440

401-01/1

MRW52602
MRW52104
MRW52204
MRW52504

672

3.6

440

328F-01/1

5/2

7.2

880

328E-01/2

512

7.2

880

401A-01/1

512

7.2

880

401-01/1

MRW52604(14)

5/2

7.2

880

328F-01/1

MRW53001

673

0.8

120

MRW53101
MRW53201
MRW53401

673

0.8

120

328E-01/2

5/3

0.8

120

401A-01/1

5/3

0.8

120

328G-01/1

MRW53501 (14)
MRW53601 (14)

5/3

0.8

120

6/3

0.8

120

MRW53102

6/3

1.6

1.5

230

MRW53202
MRW53402

5/3

1.6

1.5

230

5/3

1.6

1.5

230

401-01/1
328F-01/1
328E-01/2
401A-01/1
328G-01/1

MRW53502

5/3

1.6

1.5

230

401-01/1

MRW53602 (14)

5/3

1.6

1.5

230

328F-01/1

MRW53505

5/3

600

401-01/1

MRW53605
MRW54001
MRW54101
MRW54201

6/3

600

5/4
674

0.5

0.8

0.5

120

0.8

0.5

120

5/4

0.5

0.8

0.5

120

MRW54501 (14)

5/4

0.5

0.8

0.5

120

MRW54601 (14)

6/4

0.5

0.8

0.5

120

328F-01/1
400-01/1
328E-01/2
401A-01/1
401-01/1
328F-01/1

0.5

400-01/1

BIAS DEVICES

The BT500 and BT500F bias devices are used to provide the proper bias point for Class AB linear amplifiers. They feature
excellent thermaltracking and simpleexternalcircuitry. The BT500 is a hermetic, metal sealed device.

v(BR|EBO

IF
Device

Typ

hpE

Mln-Max

Package/Style

20-100

036-03/1

20-100

211-07/1

Bias Devices for Class AB 28-50 Volt Transistors

BT500

BT500F

500

(14) Available inJTXequivalent by replacing "TRW with "TX" prefix

MOTOROLA RF DEVICE DATA

1-17

RF SMALL-SIGNAL BIPOLAR TRANSISTORS (continued)

RF Small-Signal
Bipolar Transistors

RF Small-Signal Transistor

\18
20

Gain Characteristics
S 6
X

Curve numbers apply to transistors

listed in the subsequent tables

y 5
Q

E 4

Q
o

Selection by Package

In small-signal RF applications, the package style is often

determined by the end application or circuitconstruction tech
nique. To aid the circuit designer in device selection, the
Motorola broad range of RF small-signal amplifiertransistors
is organized by package. Devices for other applications such

/ 10

2.5

L^\

/
1

ceding tables. These devices are NPN polarity unless oth

as oscillators or switches are shown in the appropriate pre

^
9

^
l^

J*
'/ ^

11/

fil
3

"~~~~

100

150

Ifj. COLLECTOR CURRENT (mA)

erwise designated.
PLASTIC SOE CASE
Noise Figure

Gain-Bandwidth

fr
Device

Curve
No.

Maximum Ratings

Gain

NF (

GHz

Page

V(BR)CEO

Typ

MHz

Typ

MHz

Volts

-20

4.5

500

-10

-30

625

500

625

Package

Case 29-04/2, TO-226AA

MPS536 (5)
MPS571

5
6

500

900

625

500

16.5

500

625

400

625

MPS901

4.5

2.5

MPS911

1.7

0.8

MPS3866

Case 317-01/2 MACRO-X

2.8

1000

-10

-70

750

4.5

1000

-10

300

512

150

1000

1C00

500

15.5

500

200

2500

500

15.5

500

200

2500

870

200

2500

1000

375
400

MRF521 (5)

4.2

-50

MRF536 (5)

-20

MRF559

100

MRF571

1.5

1000

MRF581

MRF581A

1.8

MRF837

2000

1000

2.5

1000

12.5

1000

3.8

500

1.7

2000

12.5

2000

400

1.7

2000

12.5

2000

100

1000

500

100

500

1000

750

4.5

MRF911

MRF931

MRF941

MRF951

7.5

MRF2369

MRF901

MRF961

4.5

500

1.5

1000

(continued)

MOTOROLA RF DEVICE DATA

1-18

PLASTIC SOE CASE (continued

Noise Figure

Gain-Bandwidth
Curve
No.

ft @

Device

Maximum Ratings

Gain

NF @

GHz

Page

Typ

MHz

V(BR)CEO

Typ

MHz

Volts

Package

Case 317A-01/2 MACRO-T continued

BFR90

2.4

500

180

BFR91

1.9

500

160
500

BFR96

4.5

500

14.5

500

100

BFW92A

4.5

2.7

500

180

MRF580

500

200

2500

MRF580A

1.8

500

200

2500

5.5

250

400

3000

5.5

250

400

3000

175

500

3000

12.5

470

400

3000

870

400

3000

350

*c\

Case 317D-01/2.3
MRF542(15)

MRF553

MRF555

MRF557

MRF543 (5) (15)

Case 318-07/6 SOT-23

BFR92

3.4

BFR93

3.4

BFS17

1.3

MMBR536 (5)

5.5

-20

MMBR571

MMBR901

MMBR911

MMBR920

4.5

MMBR930

5.5

MMBR941

MMBRS51

MMBR931

MMBR2060

1.0

MMBR28S7

MMBR4957(5)

1.2

-2

MMBR5031

MMBR5179

1.4

500

2.5

4.5

500

1.9

1000

500

-10

16.5

500

1000

500

2.4

500

1.9

350

-30

350

500

350

500

350

500

350

2.1

2000

8.5

2000

400

2.1

2000

7.5

2000

100

500

4.3

1000

350

3.5

450

12.5

450

350

4.5

450

12.5

450

350

450

-30

350

2.5

450

350

4.5

200

350

Case 318A-05/1 SOT-143

MRF0211L

5.5

MRF52111.(5)

4.2

-50

MRF5711L

MRF9011L

3.8

1.8

1000

9.5

1000

580

2.8

1000

-10

-70

580

1.6

1000

13.5

1000

580

2.3

1000

10.2

1000

300

MRF9331L

MRF9411L

MRF9511L

2.5

1000

12.5

1000

2.1

2000

9.5

2000

400

2.1

2000

100

500

(S) PNP

(15) Common Base Configuration

MOTOROLA RF DEVICE DATA

1-19

SELECTION BY PACKAGE (continued)

PLASTIC SOE CASE (continued

Noise Figure

Gain-Bandwidth
Curve
No.

fT @
Device

GHz
Typ

Ic
mA

Maximum Ratings

Gain

NF @

Page

V(BR)CEO

Typ

MHz

Typ

MHz

Volts

1000

Package

Case 751-02/1 SO-8

10.5

400

175

400

1500

400

-40

-400

1000

250

-30

-500

1000

15.5

500

200

1500

250

400

1000

870

200

1500

500

300

1000

14.6

500

150

1000

MRF3866

0.8

MRF4427

1.6

MRF5160 (5)

0.8

-50

MRF5583 (5)

2.1

-35

MRF5812

5.5

500

MRF5943

1.5

3.4

200

MRF8372

MRFQ17

2.25

MRFQ19

5.3

3.5

500

CERAMIC SOE CASE

Case 144D-06/1
2N5947

1.5

3.8

200

250

400

5000 I W

MRF511

2.1

7.3

200

250

5000 |

2.5

300

11.5

300

200

5000

250

600

9000

Case 244A-01/1.3
LT2001

MRF546 (15)

MRF547(15)(5)
MRF548(1S)
MRF549(15)(5)
PT4572A

2
2

2.5

5.5

250

-70

-600

9000

5.5

250

400

5000

5.5

250

-70

-400

5000

300

200

5000

2.3

300

Case 244C-01/1
TP3401

150

TP3402

300

500

200

4300

10.5

500

400

9500

Case 244D-01/1
LT4217

5.5

2.5

500

400 | 5000

TP3098

2.6

100

6.5

500

11.5

500

200 J 5000

150

500

200

Case 249A-01/1
TP3401S

(5)PNP
(15) Common Base Configuration

MOTOROLA RF DEVICE DATA

1-20

4300

CERAMIC SOE CASE (continued)

Noise Figure

Gain-Bandwidth

Device

Maximum Ratings

Gain

Curve

tj @

No.

NF @

GHz

Page

Typ

Max

MHz

Min

MHz

V(BR)CEO

. Package

Case 303-01/1
2N6603

5.5

1000

400

2N6604

5.5

2.7

1000

500

2.2

2000

300

4000

900

1000

-10

-50

620

2N6618

(fl dB ^ 18.5 dBm Typ @ 4 GHz)

2N6679

MRF522 (5)

4.2

-50

MRF572

1.5

1000

750

MRF942

1.7

2000

12.5

2000

300

MRF952

7.5

MRF962

4.5

2.8

1000

1.7

2000

12.5

2000

100

600

500

16.5

500

100

750

Case 305B-01/1
LT3005

TP3400

125

2.S

300

200

5000

500

14.5

860

400

5000

1000

750

3.1

300

500

200

5000

200

A~
nr

Case 358-01/1

J MRF573

Case 401-01/1
LT3014

METAL CAN

Case 2043/10, TO-206AF

2N2857

1.6

4.5

450

12.5

450

2N4957 (5)

1.6

-2

450

-30

200

2N4958 (5)

1.5

-2

3.3

450

-30

200

2N4959 (5)

1.5

-2

3.8

450

-30

200

2N5031

1.6

2.5

450

200
200

2N5032

1.5

450

2N5179

1.4

4.5

200

2N6304

1.8

4.5

450

200

2N6305

1.8

5.5

450

200

BFR99 (5)

1.7

-10

600

-25

-50

225

BFX89

1.6

6.5

500

200

(5) PNP

MOTOROLA RF DEVICE DATA

1-21

SELECTION BY PACKAGE (continued)

METAL CAN (continued)

Noise Figure

Gain-Bandwidth
Curve
No.

fT @
Device

GHz
Typ

Ic
mA

Maximum Ratings

Gain

NF @

dB 1

Page

Max

MHz

Min J MHz

V(BR)CEO

200

Package

Case 20-03/10, TO-206AF

1.7

500

21 (16)

200

MM4049 (5)

-20

3(16)

500

11.5

500

-10

-30

200

MRF501

4.5(16)

200

15(16)

200

MRF502

1.2

4(16)

200

17 (16)

200

MRF524 (5)

BFY90

4.2

-50

2.5

500

-10

-50

200

MRF904

1.5(16)

450

16(16)

450

200

MRF914

4.5

2(16)

500

15(16)

500

200

2.5

300

15.S

300

150

2500

4.5

2(16)

500

100

750

1000

7000

400

5000

400

5000

400

2500

-30

-500

5000

fi
JF
*/

Case 26-03/1

| LT3046
J MRF965

7
-

Case 79-04/1, TO-205AD

2N3553
2N3866

0.5

0.7

2N3866A
2N5109

1.5

2N5583 (5)

1.5

-100

2N5943

1.5

LT1001A

LT4239
MM8000

0.8

MM8001
MRF517

2.1

MRF525 (TO-39CE)

3(16)

3.4 (16)

11.4(16)

200

400

3500

200

3000

2.5

300

13.5

2.5

500

400

3000

2.7(16)

200

11.4(16)

200

400

3500

2.7 (16)

200

11.4(16)

200

400

3500

7.5

300

10(16)

300

150

2500

400

150

2500

250

400

3500

1.4

MRF545(5)

1.2

-50

16.5 (16)

90
2.5

200

MRF586

200

300

MRF544

PT4579

175

100

2.3

3500

15.5 (16)

250

-70

500

200

2500

300

200

3000

(5) PNP
(16) Typical

MOTOROLA RF DEVICE DATA

1-22

Low-Noise
The Small-Signal devices listed are designed for low noise and high gain amplifier mixer, and multiplier applications. Each
transistor type is available in various packages. Polarity is NPN unless otherwise noted.
Curve Number

Case

Package

^
\x

Name

Number

MACRO-T

317A-01/2

MACRO-X

317-01/2

.1" Ceramic

303-01/1

.07" Ceramic

303 A-01.-1

MICRO-X
(To Be Introduced)

358-01/1

TO-206AF

20-03-10

TO-226AA

SOT-143

2N6618

SO-8

751-03-1

MRF951(18)
MRF942

2N6679(18) MRF952(18)

2N6617

MRF953(18)

MRF521

MRF522

MRF523

MMBR951(18)
MRF9411

MRF9511(18)

MRF5211

20
2

<
o

and

Noise Figure
o

MRF581

MRF572

MRF911

2N6603

2N6604

MPS571

BFR91

MRF901

MRF573

MRF904

MRF914

MPS901

MPS911

MMBR941
-

versus

MRF580

(5) PNP

Frequency

MRF571

MRF2369(17)

MRF524

(17) Higher Voltage Version

(18) Higher Current Version

Gain

MRF943
-

3(5)

MRF941
-

318-07-6

318A-05 1

29-04/2

SOT-23

%
*\9

MOTOROLA RF DEVICE DATA

1-23

MMBR571

MMBR901 MMBR911

MRF5711

MRF0211(17)

MRF5812

MRF9011

CATV, MATV and Class A Linear

ForClass A linear CATV/MATV applications. Listed according to increasing gain-bandwidth (fr).

Device

MRF501

Distortion Specifications

Noise Figure

Nominal Test
Conditions

VCE"C

MHz

Typ/Freq.

VoIts/mA

Typ

dB/MHz

6/5

1000

4:5/200

20-03/10

2nd
Order
IMD

3rd
Order

IMD

12 Ch.
CrossMod.

Output
Level
dBmV

V(BR)CEO
V

Package/
Style

MRF502

6/5

1200

4/200

2N5179

6/10

1400

3.2/200

20-03/10

6/5

1500

4/450

318-06/6

2N5109

15/50

1500

3/200

2N5943

15/50

1500

3.4/200

MRF5943

15/50

1500

3.4/200

MMBR5179

MRF5583 (5)

-4

-50

+ 50

79-04/1

751-02/1

-30

751-02/1

10/-100

1500

BFX89

5/25

1600

2.5/500

20-03/10

BFY90

5/25

1700

2.5/500

2043/10

2N6304

5/10

1800

3.2/450

20-03/10

2N6305

5/10

1600

4/450

2043/10

10/-2

2000

3/450

-30

318-06/6

1.9/450

318-06/6

7.3/200

144D-06/1

MMBR49S7 (5)

6/5

2000

MRF511

20/80

2100

MRFQ17

12.5/50

2200

PT4572A

14/90

2500

2.3/300

PT4579

14/90

2500

2.3/300

MMBR5031

-50

-65

-57

+50

751-02/1

244A-01/1

79-04/1

1(28)

244A-01/1

+45

7944/1

TP3098

15/100

2600

6.5/500

MRF517

15/60

2700

6.5/300

LT1001A(19)

14/90

3000

2.5/300

79-04/1

LT2001

14/90

3000

2.5/300

244A-01/1

LT3005

14/90

3000

2.5/300

305B-01/1
401-01/1

-60

-72

-57

LT3014(19)

14/90

3000

3.1/300

LT3046

14/90

3000

2.5/300

2643/1

TP3400

18/125

3000

7/500

305B41/1

MMBR920

10/14

4500

2.4/500

31846/6

BFW92A

10/10

4500

2.7/500

317A41/2

MRF586

15/90

4500

3/500

7944/1

BFR96

10/50

4500

2/500

317A41/2

MRF961

10/50

4500

2/500

31741/2

MRF962

10/50

4500

2/500

30341/1

MRF96S

10750

4500

2/500

2643/1

1.2(28)

-50

-72

+ 50

(continued)

(5) PNP

(19)Available hiJTXequivalent by roptedng "LT wttti TX" prefix

(26)Output in volts according to DIN45004B

MOTOROLA RF DEVICE DATA

1-24

Noise Figure

Nominal Test

Distortion Specifications

Output

VCE'lC

MHz

Typ/Freq.

Order

3rd
Order

Cross-

Level

V(BR)CEO

Votts/mA

Typ

dB/MHz

IMD

Mod.

dBmV

Device

2nd

12 Ch.

Conditions

Package/
Style

BFR90

10/14

5000

2.4/500

317A-01/2

BFR91

5/30

5000

1.9/500

317A41/2

LT4217

14/90

5000

4/500

244D41/1

LT4239 (19)

14/90

5000

4/500

79-04/1

MRF581

10/75

5000

2/500

-65

+ 50

31741/2
31741/2

MRF581A

10/75

5000

1.8/500

-65

+ 50

MRF5812

10/75

5000

1.8/500

-65

+ 50

75142/1

MRF587

15/90

5500

3/500

-72

+ 50

144D46/1

TP3401

12.5/150

5000

1.2(20)

244C41/1

TP3401S

12.5/150

5000

1.2(20)

249A41/1

TP3402

12.5/300

5000

1.6(20)

244C41/1

30341/1

2N6679

-52

(Has Pi dB of 18.5 dBm Typ @ 4 GHz)

High-Voltage
These discrete devices are specially designed for CRT driver applications requiring high frequency response and high voltage,
such as high resolution color graphics video monitors, Gold metallized dice are used to insure high reliability and improved
ruggedness.

V(BR)CEO

V(BR)CBO

Device

'C(max)
mA

hpE

T/VCE.IC

CCB/VCE

Package/

GHz/V, mA

pF/V

Style

NPN

LT1814 (19)

120

400

20-60

1/15, 50

3.5/15

40141/2

LT1B17

120

400

20-60

1/15, 50

2.5/15

244D41/2

LT1839 (19)

120

300

20-60

1/15, 50

2.5/15

7944/1

MRF544

120

400

15-

1.4/10,50

1.8/10

7944/1

MRF542

120

400

15-

MRF546

120

600

15-

MRF548

120

400

15-

LT5817

-65

-80

-400

15-60

LT5839 (19)

-65

-80

-300

15-60

MRF545

-70

-100

-400

15-

MRF543

-70

-100

-400

15-

MRF547

-70

-100

-600

15-

MRF549

-70

-100

-400

15-

70/-65

120/-80

2/10

317D41/3

3.6/10

244A41/3

2/10

244A41/3

1.5/10, -60

1.5/-10

244D41/2

1.5/10, -60

1.5/-10

7944/1

1.2/25, -50

2/-10

7944/1

PNP

2/-10

317D42/3

3.6/-10

244A41/3

2/-10

244A41/3

NPN-PNP Pair
CR820

40(16)

(16) Typical

(19) Available in JTX equivalent by replacing "LT" and "TX" prefix

(20) Output In volts according to DIN45004B

MOTOROLA RF DEVICE DATA

1-25

1/+15, 50

2.5/+15

High-Speed Switches
The transistors listed beloware for use as high-frequency current-mode switches. They are also suitable for RF amplifier and

oscillator applications. The devices are listed in ascending order of collector current. Thesedevices are NPN polarity unless
otherwise designated.
Test
Conditions

rb'Cc

C/VCE

MHz

mA/Votts

Min

P
Max

Package/Style

10/10

1300

2243/1

2N3960

10/10

1600

2243/1

2N5835

10/6

2500

5(16)

2043/10

Device
2N3959

20/5

4000

MRF914

20/10

4500(16)

2N5S83 (5)

50/10

1000

8(16)

2N5836

50/6

2000

6(16)

2643/1

2N5943

50/15

1200

5.5(16)

7944/1

2N5837

100/3

1700

6(16)

2643/1

MM4049 (5)

2043/10

7944/1

UHF and Microwave Oscillators

The transistors listed below are for UHFand microwaveoscillator applications as initial signal sources or as output stages of

limited range transmitters. Devices are listed inorder of increasing output power.
Test Conditions

Pout

Vcc

MHz

Volts

Min

Typ

Package/Style

2N5179

500

1400

2043/10

2N2857

500

1600

2043/10

MM8009

1680

200

1400

7944/1

2N5108

1680

300

1400

7944/1

500(16)

2200

2643/1

800

7944/1

Device

1680

MRF905

2N3866

400

1000

MPS3866

400

1000

800

2944/2

MRF3866

400

1000

800

75142/1

Complementary

High Reliability
(MIL) Transistors

Devices

The listed devices are active per QPL-19500 (Qualified

Products List).Fordetailed specification, see indicatedpage
numbers.

The transistor complements listed are suitable for most

applications requiring NPN and PNP devices of similar RF

characteristics. Special matching of complementary transis
tors is available upon request. See indicated pages for

Page#

JAN

JTX

JTXV

JANS

2N2857

2N3553

2N3866

2N3959

Device

specifications.

NPN

Page#

X
1-21

2N3960

2N2857

2N4957

2N3866

1-8

2NS109
2N6603
2N6604

2N5943

1-22

MRF904
MRF571

(5) PNP

(16) Typical

MOTOROLA RF DEVICE DATA

1-26

1-18

PNP

2N4958
2N5160
2N5583
MM4049
MRF521

Page#
1-21
1-8

1-22
1-22

1-18

Volume I

Discrete Transistor
Data Sheets

2-1

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N2857

The RF Line

NPN SILICON
RF SMALL-SIGNAL
TRANSISTORS

NPN SILICON RF SMALL-SIGNAL TRANSISTORS

. .. designed primarily for use in high-gain, low-noise amplifier, oscil

lator, and mixer applications. Can also be used in UHF converter
applications.

High Current-Gain-Bandwidth Product -

fj = 1.6 GHz (Typ) @ Iq = 8.0 mAdc

Low Collector-Base Time Constant -

Characterized with Scattering Parameters

Ideal for Micro-Power Applications

rb'Cc = 15 ps (Max) @Ie = 2.0 mAdc

"""-I
G

.7]
'MAXIMUM RATINGS

lU-O
Value

Unit

VCEO

Vdc

Collector-Base Voltage

VCB

Vdc

Emitter-Base Voltage

VEB

2.5

Vdc

Collector Current - Continuous

mAdc

Total Device Dissipation @T^ 25C

Rating
Collector-Emitter Voltage

Symbol

Derate above 25C

TotalDevice Dissipation @Tc 25C

Oerote above 25C

Storage Temperature Range

STYLE M:
PINV EMITTER
2 BASE
3 COLLECTOR
4CASE

Tstg

200

1.14

mW/C

NOTE ALLRULES ANDNOTES ASSOCIATEO WITH TO-72

OUTLINE SHALLAPPLY
MILLIMETERS

INCHES

MAX

531

5S4

0209

452

495

0178

0195

C
D
E

432
041

533

0170

0210

053

0016

0021

041

300

1.72

mW/C

-65 to +200

076

091

J ) 071
X

1270

635

117

122
_

45BSC
127BSC

M
N
P

048

0030

0016

254BSC

00(6
0036
00(3
0028
0500
0250
45BSC

1 127

(TO-72)

MOTOROLA RF DEVICE DATA

2-2

0019

0100BSC

0050BSC

CASE 20-03
TO-206AF

'indicates JEDEC Registered Data.

MAX

1 0050

2N2857

'ELECTRICAL CHARACTERISTICS (TA - 25C unless otherwise noted)

Characteristic
Symbol |

Min

| Typ

Max

"f"

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage**

tip "3.0 mAdc. IB =0)

V(BR)CEO

Collector-Base BreakdownVoltage
(C 1.0 jAdc, Ie =0)
Emitter-Base BreakdownVoltage
<lE = 10jiAdc, lc =0)

v(BR)CB0

v(BB)EB0

2.5

Collector Cutoff Current

Vdc

CBO

(VCB - 15 Vdc, l - 0)

pAdc
0.01

ON CHARACTERISTICS
DC Current Gain

"FE

(IC" 3.0 mAdc, Vce 1.0 Vdc)

150

1000

1900

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product
C 5.0 mAdc. Vce " 6-0 Vdc. f = 100 MHz)
Collector-Base Capacitance

(VCB " 10 Vdc. Ie " 0, f " 0.1 to 1.0 MHz)

Small-Signal Current Gain

C " 2.0 mAdc. VC 6.0 Vdc. f = 1.0 kHz)

Collector-Base Time Constant

Ccb

1.0

hfe

220

rb'Cc

E " 2.0 mAdc. VCB - 6.0 Vdc. f - 31.9 MHz)

4.0

Noise Figure (Figure 1)

(lE-0.1 mAdc. Vce - 1.0Vdc.RS=50ohms,f=450MHz)

(IC -1.5 mAdc,VC=6.0Vdc,Rs =50ohms,f =450MHz)

5.8
4.1

4.5

FUNCTIONAL TEST

Common-Emitter AmplifierPower Gain (Figure 1)

E =0.1 mAdc,VCe " 1-0Vdc, f =450 MHz)
(IC1SmAdc,VCE6.0Vdc.f 450MHz)

Jpe
12.5

PowerOutput (Figure 2)

(IE 12 mAdc. VCb 10 Vdc. f - 500 MHz)

^Indicate* JEOEC Registered Oat*.

Motorola quaranteet this datain addition to JEOE^ Registered Data.

fT isdefined as thefrequency atwhich |h(Jextrapolate* to unity.

Micro-Power Specifications.

MOTOROLA RF DEVICE DATA

2-3

2N2857

FIGURE 2 - TEST CIRCUIT FOR

OSCILLATOR POWER OUTPUT

FIGURE 1 - TEST CIRCUIT FOR NOISE

FIGURE AND POWER GAIN

C<pjtiunc<nfiKt in pF

3F1-

0.3-M)7x

as-son
JT

T~"?r"T*

Ki -Atl
I
/ 0.W.O toJH

i;
LI - 1 tret 116 AWG win. W

0.0.11/4" ton).

CtucitinctvjIuMinBF

L1.L2-SiMrUtadbnsrail.1-t/riaii)>dt/4"*. iMttO

output fromwiplifin. tiinoCI. C3.red C4tot

n ten 1/2" horn nana nrtictl tins* arita.

L3 - 1/2turn IIS AWGwin. lottttd 1/4" tram>m)

imiumim output.

101 InwchmgicoiioKlionitotismlgtotntottnd

pinlidnl2.
- banal biwlttd timid to iottu content lad (ram

RF votlratttr.

(El WWlBttiMnt BtMlisplad to outputttraMiol

tmpiilitt.tdjutl C2forminimum indication!! input
(F) RtpM atpl (A|. IBI.nd(CIto dtmaxot if retunino

oiimrxtdbmlaO.
NnitnUittioa Pronoun:

(A) Diawl4504IK>ii=al9n>ntw(Nt1tiRs-S0otinn|
to jnpst ttnnfauh of nsfifac.
IB) CoitnactSO^IunRFootlmttrKtmwtptittniRtnlt
ol tmplitkr.

FIGURE 4 - NOISE FIGURE versus SOURCE

RESISTANCE AND COLLECTOR CURRENT

FIGURE 3 - NOISE FIGURE versus FREQUENCY

1 1

I f 1.0 mAdc
8.U

7.0

VcE*B.0Vdc .
J / 105MHz

- = ==^

9.0

~ Rs Optimum | 250 Chrni 0105 and 20C

^^""-x

MHz]

U 100Ohms @450MHz

-V

sSU,M-)
->.^jJ
dB|

6.0

x. ^s
"V Ks

-V

3.5 dB

4.0
3.0

^_
A

^:
'^

"-fH-S^ZJ
=;4.5dB-===-

-.:

2.0

1.0
0

100

1.0

200

2.0

FIGURE 5 - NOISE FIGURE versus SOURCE

RESISTANCE AND COLLECTOR CURRENT

3.0

IC. COLLECTOR CURRENT(mAdc)

I. FREQUENCY (MHi)

0.7

1.0

5.0

IC,COLLECTOR CURRENT (mAdc)

MOTOROLA RF DEVICE DATA

2-4

5.0

2N2857

FIGURE 6 - CURRENT-GAIN-

FIGURE 7 - NOISE FIGURE AND POWER GAIN

BANDWIDTH PRODUCT

versus COLLECTOR CURRENT

11
tS 1.8
O

8.0

--.

5 M

6.0

1.0

i i.2

RS * 50 Oh ns
1 450 M

2.0

Jf 0.4
0

3.0

5.0

7.0

0.5

IC. COLLECTOR CURRENT (mAdc)

0.7

1.0

2.0

5.0

7.0

IC, COLLECTOR CURRENT (mAdc)

FIGURE 8 - INPUT ADMITTANCE

FIGURE 9 - OUTPUT ADMITTANCE

versus FREQUENCY

vce = b.o vdc

vce 6.o vdc

IC 15 mAdc

nAdc

^
+jbj,

9ie

9oe

10
0

200

300

400

500

600

100

150

200

I. FREQUENCY (MHz)

300

400

500 600

t, FREQUENCYMHz)

FIGURE 10-FORWARD TRANSFER

FIGURE 11 -REVERSE TRANSFER

ADMITTANCE versus FREQUENCY

vce = 6.0 vdc

VcE = 6.0Vdc

nAdc

IC 1.5

nAdc

40
Sle

-jb

J)/

\
-|fe

S^
-9te

200

300

400

500 600

300

I. FREQUENCY (MHz)

400

I. FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-5

500

600

2N2857

FIGURE 13 - S22. OUTPUT REFLECTION COEFFICIENT

12 - Slf, INPUT REFLECTION COEFFICIENT

350

330,

3S0

340

330

VA
//r.
'~~~iianHi'jtvm'm
'./:;js6oiiiu'^\
.

j-'i--\--^5

;;

-->C >:._Ohm'

190

200

210

FIGURE 14 - S12. REVERSE TRANSMISSION COEFFICIENT

350

340

160

170

180

190

200

210

FIGURE 15- S21. FORWARD TRANSMISSION COEFFICIENT

330

350?

190

MOTOROLA RF DEVICE DATA

2-6

340

200

3M?_

210

2N2857

FIGURE 16- S|1#INPUT REFLECTION COEFFICIENT AND S22.OUTPUT REFLECTION COEFFICIENT

MOTOROLA RF DEVICE DATA

2-7

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N3S53

The RF Line
2.5 W-175 MHz
HIGH FREQUENCY
TRANSISTOR

NPN SILICON HIGH-FREQUENCY TRANSISTOR

NPN SILICON

. . . designed for amplifier and oscillator applications in military

and industrial equipment. Suitable for use as output, driveror predriver stages in VHF equipment.

Specified 175 MHz. 28 Vdc Characteristics Output Power = 2.5 Watts

Minimum Gain = 10 dB

Efficiency = 50%

MAXIMUM RATINGS
Unit

Symbol

Rating

VCEO
VCB

Collector-Emitter Voltage

Collector-Bate Voltage

VEB

Emitter-Bate Voltage

STYLE I:

PIN 1 EMITTER

1.0

Collector Current

Total Device Oittipation

7.0

Watts

mW/C

Tj. Tg

-65 to +200

>Tc - 25C

Derate above 25C

Operating and Storage Junction

-II- pin,

iSoUCTOR l*l036<00>|T|AlHj

Temperature Range
Indicates JEDEC Registered Data.
NOTES

1 DIMENSIONING ANDTOLERANCING PER ANSI

Y14SM. 1982

2 CONTROLLING DIMENSION: INCH

3 DIMENSION J MEASURED FROM DIMENSION A

FIGURE 1 - OUTPUT POWER versus FREQUENCY

MAXIMUM

4 0IMENSION B SHALL NOTVARYMORE THAN 025

100101 INZONE R.THIS ZONE CONTROLLED FOR
AUTOMATIC HANDLING.

5 DIMENSION f APPLIES BETWEEN DIMENSION P

AM) L DIMENSION 0 APPLIES BETWEEN
DIMENSION L ANDK MINIMUM. LEAD DIAMETER
ISUNCONTROLLED INDIMENSION P AND
BEYOND DIMENSION KMINIMUM.
INCHES

MILLIMETERS
DM

I
P

200

300

0250

0016

0021
0041

023
041

ISO

0240

053
104

6 tO
041

f
f
G
H
J
K

100

660

0335

939

850

048
5 03 BSC
072
086
114
074
1905
1270
635
45 BSC
_

1.21

254

0009

0019
0.200 BSC
0034
00*5
0029
0750
0500
0250
45 ISC
0050
0100
0028

TO-205AO

(TO-39)

MOTOROLA RF DEVICE DATA

2-8

0370

0016

CASE 79-04

f, FREQUENCYIMHi)

MAX

mm
0335
0305

MAX

MM
851
7.75

2N3553

ELECTRICAL CHARACTERISTICS ITA= 25C unless otherwise noted)

Characteristic

Symbol

Typ

Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage ID

vCE0(sus)

V(BR)EB0

4.0

Vdc

(IC = 200 mAdc, lB-0)

Emitter-Base Breakdown Voltage

Oe-0.1 mAdc, lc-0)

Collector Cutoff Current

'CEO

(VCE-30Vdc. IB = 0)
Collector Cutoff Current

0.1

Vdc

mAdc

'CEX

(VCE- 30 Vdc. VBE(0ff) = 15 Vdc, Tc = 200CI

mAdc

5.0

(VCE 65 Vdc. VBE(ofl) = 1.5 Vdc)

1.0

Emitter Cutoff Current

ebo

(VBE = 4.0 Vdc. Ic 0)

0.1

mAdc

ON CHARACTERISTICS
DC Current Gain

r-FE

(IC = 250mAdc, Vce " 5.0 Vdc)

Collector-Emitter Saturation Voltage

vCE(sat)

(IC " 250 mAdc, lB 50 mAdc)

1.0

Vdc

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product

(IC = 100 mAdc. VCE = 28 Vdc, f = 100 MHz)

Output Capacitance

'T
Cob

500

8.0

MHz

0.25

Watt

IVcb = 30 Vdc, lE - 0, f = 100 kHz)

FUNCTIONAL TESTS

Power Input

IVCE 28 Vdc. Pout = 2.5 Watts, f = 175 MHz)

Common-Emitter Amplifier Power Gain

Gpe

10
-

(VCE = 28 Vdc, Pout 2.5 Watts, f = 175 MHz)

Collector Efficiency

(VCE = 28 Vdc, Pout = 2.5 Watts, f = 175 MHz)

'Indicates JEDEC Registered Data
(1) Pulsed thru a 25 mH inductor.

FIGURE 2 - 175 MHz TEST CIRCUIT SCHEMATIC

LI -2 Turns #16 AWQ WIro 3/16" I.D., 1/4" Long

L2 -2 Turns #16 AWG WIro 3/16" I.D., 1/4" Long
L3 - 3 Turns #16 AWG Wire 3/8" I.C., 3/8" Long

#*3.0-35 pF

3.0-35 pF

28 Vdc
<-

-#*RF Input >-

0.009 fiF

MOTOROLA RF DEVICE DATA

2-9

-C RF Output

3* 3.10-35 pF

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N3866
2N3866A

The RF Line
LOW-400 MHz

HIGH FREQUENCY
TRANSISTOR

NPN SILICON HIGH FREQUENCY TRANSISTOR

NPN SILICON

... designed for amplifier and oscillator applications in military and

industrial equipment. Suitable for use as output, driver or pre-driver
stages in VHF and UHF equipment.

Specified 400 MHz, 28 Vdc Characteristics

Output Power = 1.0 Watt
Minimum Gain = 10 dB

Efficiency = 45%

Large Signal Series Equivalent Impedances

S-Parameter Characterization

rr-G*D

NOTES

1 DIMENSIONING AND TOURANONG PER ANSI

YMSM. 19S2
2 CONTROLLING DIMENSION INCH
3 DIMENSION J MEASURED FROM DIMENSION A
MAXIMUM

4 DIMENSION B SHALL NOT VARYMORE THAN 0 25

100101 IN ZONE R. THIS ZONE CONTROLLEDFOR

'MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

VEBO
'C
PD

3.5

Vdc

0.4

Adc

Collector Current Continuous

Total Device Dissipation @Tc 2^0

Derate Above 25C
Storage Temperature Range

MILLIMETERS
DM
A

5.0

28.6

Tstg

AUTOMATIC HANDLING.
5 DIMENSIONF APPLIESBETWEENDIMENSIONP
ANDL. DIMENSIOND APPLIESBETWEEN
DIMENSIONL AND K MINIMUM LEADDIAMETER
IS UNCONTROLLED IN DIMENSIONP AND
BEYONDDIMENSIONK MINIMUM
INCHES

MSN 1 MAX

1 MAX

851 ' 939

Watts

775

850

0305

0335

660

0240

0260

610
041

063

0016

0021

E
f

023 | 104

0009

0041

041 ! 048

0016

0019

G
H
J

5 08 BSC
072
086
074
1.14

'Indicates JEDEC Registered Data

I
M
P
R

1270

19 OS

635
45' BSC
127
254
_

0200 BSC

0028 { 0034
0029

0045

0500

1 0750

0250 1

TO-205AD

(TO-39)

MOTOROLA RF DEVICE DATA

45'BSC
0050
0100
_

CASE 79-04

2-10

0370

0335

mW/C
C

-65 to +200

2N3866, 2N3866A
'ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted).
Characteristic

Symbol

Min

VCEO(sus)

VCER(sus)

Vdc

V(BR)EBO

3.5

Vdc

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage

dC = 5.0 mAdc, Ib = 0)
Collector-Base Sustaining Voltage
dC = 5.0 mAdc, Rbe = 10 M
Emitter-Base Breakdown Voltage
E = 100 uAdc, lc = 0)
Collector Cutoff Current

'CEO

(Vce = 28 vdc, is = o)
Emitter Cutoff Current

ebo

, (VBe = 3.5 Vdc, lc = 0)

1 Collector CutoffCurrent

0.02

mAdc

0.1

mAdc

'CEX

(VcE = 30 Vdc,VBe = -1.5 Vdc(Rev.), Tc = 200C)

mAdc
-

<VCE = 55 Vdc,VBe = -1.5 Vdc (Rev.)

Vdc

5.0
0.1

ON CHARACTERISTICS
OC Current Gain

dc = 360 mAdc, Vce = 5.0 Vdc)

dC = 50 mAdc, Vqe = 5.0 Vdc)

Both

5.0
10
25

2N3866
2N3866A

Collector-EmitterSaturation Voltage
dC " 100 mAdc, lB = 20 mAdc)

VCE(sat)

200
200
1.0

Vdc

DYNAMIC CHARACTERISTICS

Current-Gain Bandwidth Product

dC = 50 mAdc, Vce = 15 Vdc, f = 200 MHz)

MHz

2N3866
2N3866A

500
800

Output Capacitance

(VCB " 28Vdc,lE = 0, f

Cob

1.0 MHz)

3.0

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

GPE

(VCC " 28 Vdc, Pout = 1.0 W, f = 400 MHz)

Collector Efficiency

(VCC " 28 Vdc, Pout

1.0 W,f = 400 MHz)

'Indicates JEDEC Registered Data.

FIGURE 1 - 400 MHz TEST CIRCUIT SCHEMATIC

CV. 3.0-35 pF
C2.CS: 8.0 60 pF
C3: 12 OF

C4: 1000 pF
C6: 0.9-7.0 pF
Li: Two turns #18 Wire.
t/4" ID, 1/8" long
L2: FERRITE RF Choke,

One Turn, z 450 Ohms

L3.L4: RF Choke, 0.1 MH

L5: 2-3/4 Turns. #18 Wire,
1/4" ID. 3/16" long
B1: 5.6 Ohms

MOTOROLA RF DEVICE DATA

2-11

2N3866, 2N3866A

FIGURE 2 - POWER OUTPUT versus

FREQUENCY (Class C)

FIGURE 3 - CURRENT-GAIN - BANOWIOTH PRODUCT

vce 28 v
_

2.0

Pin-200mW
.

100 mW

s^^ 50

i.o

25 mW

<? 0.8
0.7

VCE = 15 Vdc
200

400

300

500

600

I. FREQUENCY (MHi)

FIGURE 4 -

100

120

140

160

IC.COLLECTOR CURRENT ImA)

FIGURE 5 - OUTPUT CAPACITANCE

COLLECTOR-BASE TIME CONSTANT

8.0

%
z

3 40
(-

en 4.0

VcE"5Vd c
f-31.81. IHi
10

5.0

Vce. COLLECTORflASE VOLTAGE IV0LTS)

IC.COLLECTOR CURRENT (mA)

FIGUR E 6 - OUTPUT POWER versus INPUT POWER

(CLASSC)

FIGURE 7 - SMALL-SIGNAL CURRENT GAIN

V
*

f-175 MHz

2JO

15 Vdc
80 mAdc

vce
ic

Ihftlld B)

VCE"28V

<**

13. 5V

0.5

3 r> -*-*

20 V

- H.(h(e>.
-7

100

200
I. FREQUENCY (MHz)

Pin. INPUTPOWER IitW

MOTOROLA RF DEVICE DATA

2-12

400

600

800

2N3866, 2N3866A

FIGURE 8 - LARGE-SIGNAL SERIES EQUIVALENT

IMPEDANCES

FIGURE 9 - Sn AND S22 versus FREQUENCY

FIGURE 10 - S21 versus FREQUENCY

.30

10?

tfl

3sn

340

FIGURE 11 - S12 versus FREQUENCY

no"

30"

350

340

330
320

310"

7C,

If; SO mAdc,

300

,VCE - 15 Vdc '

'. lc 50 mAdc

VCE-15 Vdc

4o''.>l>W,,-.:.;

100

1290

'0(

280

80'

|20

J760

100

1750

740

230

?'/!
a:s

Y \-f\
00

.*;!)

280"
1270
260

;250

M|240

170

:.-:-.

I301"

: . 150"

730

160

170

180

190

200

210

130

150

MOTOROLA RF DEVICE DATA

2-13

160

170

iiiiiSlMM
180

190

200

210

?3n>

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N3924

The RF Line
NPN SILICON
RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

... optimized Annular transistor for large-signal poweramplifier and driver applications to 300 MHz.
Designed for 13.6 Volt Operation
High Output Power 4.0 W Min @ f = 175 MHz
Multiple-Emitter Construction for Excellent High-Frequency
Performance

Guaranteed Safe Operating Area

VcEO(sus) Measured at lc = 200 mAdc

STYLE I

PIN I EMITTER

|L p

2 BASE

3COLLECTOR lii*OM?!*Jli**LHJ,J

NOTES
1 DIMENSIONING AND T0LERANCINGPER ANSI
V14 5M, 1982
2 CONTROLLING DIMENSION INCH
3 DIMENSIONJ MEASUREDFROM DIMENSIONA
MAXIMUM
4 DIMENSION 6 SHALL NOT VARYMORE THAN 0 75
100101IN ZONE R THISZONECONTROLLED FOR
AUTOMATICHANDLING
5 DIMENSIONf APPLIESBETWEENDIMENSIONP
AN0 L DIMENSION0 APPLIESBETWEEN
DIMENSION L ANDK MINIMUM LEADDIAMETER
IS UNCONTROLLED IN DIMENSIONP AND
BEYONDDIMENSION K MINIMUM

MAXIMUM RATINGS <TA = 25Cunless otherwise noted)

MILLIMETERS
OtM

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Unit

7 75 1

850

Vdc

~030S | 0335 |

VCEO

610
041

660

0240 1 0260

023

053
104

0009_j 0W1 i

041

048

0016 1 0019 '

VCB

Vdc

VEB

4.0

Vdc

0.S

Adc

Power Dissipation @ Tc = 25C

7.0
40

Derate above 25C

Operating and Storage Junction

meres

KIN I MAX 1

1 MAX

851 ] 939 ,

Value

Collector Current

Emitter-Base Voltage

MIN

Symbol

D
E
F

Watts
mWTC

-65 to +200

Temperature Range

0016 1 0071

0700 BSC
0034

soaBSC
072
0.74

086

0078

114

0029

0045

1770

1905

0500

0750

635 1 -

Tj. Tstg

0335 1 0 370 ;

P
R

0750

45 BSC
127

254

TO-205AD

(TO-39)

MOTOROLA RF DEVICE DATA

2-14

I 0050

0100 1 -

CASE 79-04

'Indicates JEDEC Registered Data.

45 BSC

2N3924

ELECTRICAL CHARACTERISTICS (Ta = 25"C unless otherwise noted)

Symbol

Min

Collector-Emitter Sustaining Voltage (Figure 2)

(IC = 200 mAdc)

VCEO(sus)

Vdc

Collector-Base Breakdown Voltage

V(BR)CBO

Vdc

v(BR)EBO

4.0

Vdc

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS

(IC = 0.25 mAdc, Ie = 0)

Emitter-Base Breakdown Voltage

(IE = 1.0 mAdc, lc = 0)

Collector Cutoff Current

cbo

(Vcb 16 Vdc, l = 0)
(Vcb = 15 Vdc, Ie = 0, TA = 150C)

mAdc
-

0.1
5.0

DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product

dC = 100 mAdc, Vce = 136 Vdc. f = 100 MHz

Output Capacitance

Cob

(Vcb = '3-6 Vdc, Ie = 0, f = 100 kHz

350

12.5

MHz

1.0

Watt

FUNCTIONAL TESTS

Power Input

Test Circuit Figure 1

Common-Emitter Amplifier

Gpe

6.0

Power Gain

VCe = 136 Vdc, Rs = 50 ohms,

RL = 50 ohms, f = 175 MHz

Collector Efficiency

Pout - 4- Watts

FIGURE 1 175 MHz TEST CIRCUIT

7.3

RQURE 2 PULSE TEST CIRCUIT

C3> L3

Pulsed @ 0

60 Hz
50% Duty

hl
son

RD ,
nRe,av

Scope

Cycle 0P

" Jcsjcejc?

+VCC
13.6 Vdc

C-|, C2, C4
C3
C5
C6
C7

5-50 pF (Air variable)

7-100 pF (Air variable)
470 pF (Disc ceramic)
0.01 pF (Disc ceramic)

To Scope
-o Horizontal

Sensing

0.001 ix? (Disc ceramic)

Li 1Vi turns #14 AWG tinned

wire; %" ID Air wound;
winding length Via"; base

tapped 1 turn from ground

12 RFC
L3 2 turns #14 AWG tinned wire;
W IDAir wound; winding
length Vi"

MOTOROLA RF DEVICE DATA

2-15

2N3924

CLASS C DESIGN DATA FOR VC = 13.6 Vdc, TC = 25C

(Emitter Grounded Directly to the Chassis No Tuned-Emitter Techniques Used)
FIGURE 5 PARALLEL EQUIVALENT INPUT RESISTANCE
12

Port = 2-0 W-

Ba0
55 6.0

FIGURE 3 POWER OUTPUT versus FREQUENCY

**o ut = 4.0W

4.0

35 7.0

I 5X1

= 0. 25 VIV

05 W

s
v

53.0

2.0

LOW 1.5 W

100

200

300

f, FREQUENCY (MHz)

\ \
\

RGURE 6 PARALLEL EQUIVALENT INPUT CAPACITANCE

2.0

300

270

c240
1.0
70

200

100

210

300

f, FREQUENCY (Mrbl

Pout = WW

| 180
2 150

g120

FIGURE 4 POWER OUTPUT versus POWER INPUT

8.0

Pout ==4.owNv>

7 60
30

| 6.0

13.6 Vdc

0
30

Vce = ISVdc^

200

100

300

f, FREQUENCY (MHz)

4.0
FIGURE 7 PARALLEL EQUIVALENT OUTPUT CAPACITANCE
f=i; 5 MHz

f 2.0

-B30

0.5

1.0

1.5

2.0

Pin.TOWER INPUT (WATTS)

^- P0i

25
h

Pout =2-0W\

5 20

J15
10
30

100

f, FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-16

200

300

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N394S

The RF Line
LOW-400 MHz

HIGH FREQUENCY
TRANSISTOR
NPN SILICON

NPN SILICON HIGH-FREQUENCY TRANSISTOR

. . . designed for amplifier applications in industrial and com

mercial equipment. Suitable for use as output, driver or pre-driver

stages in UHF equipment.

Specified 400 MHz, 13.6 Vdc Characteristics -

Output Power = 1.0 Watt

Minimum Gain = 6.0 dB

Efficiency = 45%

STYLE1

PIN I EMITTER

4D >fl

2 BASE

3COLLECTOR 1*I0MWI [l] A| H|

NOTES

'MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

Vceo

Vdc

Collector-Bate Voltage

VCB
VEB
>C
PD

Vdc

3.5

Vdc

400

mAdc

Emitter-Base Voltage
Collector Current Continuous

Total Device Dissipation & T/x = 25C

Derate above 25C

Operating and Storage Junction

Temperature Range

TJ.Tg

1.0

Watt

5.71

mW/C

-65 to +200

THERMAL CHARACTERISTICS

MAXIMUM.

4 DIMENSIONS SHALL NOTVARY MORE THAN 025

10.0101 IN ZONER. THISZONECONTROLLED FOR
AUTOMATIC HANDLING.
5 DIMENSION F APPLIES BETWEEN DIMENSION P
ANDI. DIMENSION D APPLIESBETWEEN
DIMENSION LANDKMINIMUM. LEAD DIAMETER
. IS UNCONTROLLED IN DIMENSION P AND
BEYOND DIMENSION K MINIMUM.
DM

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RflJC

C/W

Thermal Resistance, Junction to Ambient

R9JA

175

C/W

Characteristic

1 DIMENSIONING AND T0LERANC1NG PER ANSI

YI4.5M, 1382.
2 CONTROLLING DIMENSION: INCH
3 DIMENSION J MEASURE0FROMDIMENSION A

'Indicates JEDEC Registered Data

A
B
C

MILLIMETERS
MAX
MM
933
SSI
775
850
610
660

041

E
F

073

053
104

077

074

1.14

12.70
635

1905

0021
0041

0016

0019

0028
0079

0500
0250

0100

CASE 79-04
TO-20SAD

(TO-39)

MOTOROLA RF DEVICE DATA

2-17

0045

0750

45 BSC

177

754

0260

0200 BSC
0034

086

45" BSC

M
R

0.240
0016
0009

048
5 08 BSC

N
J

INCHES
MW
MAX
0335
0370
0305
0335

041

0050
-

2N3948
'ELECTRICAL CHARACTERISTICS (TA 25C unlessotherwise noted)
I

Symbol

Characteristic

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage

vCEO(sus)

V(BR)CB0

V(BH)EB0

3.5

Vdc

(IC 5.0 mAdc, \g = 0)

Collector-Base Breakdown Voltage

Vdc

(lC"0.1 mAdc, Ie=0I

Emitter-Base Breakdown Voltage

Vdc

(lE -0.1 mAdc, lc = 0)

Collector Cutoff Current

MAdc

cbo

(Vcb "15 Vdc, 'E = >

0.1

(Vcb - 15 Vdc, Ie =0, TA 150C)

100

ON CHARACTERISTICS
DC Current Gain

hFE

700

MHz

(IC - 50 mAdc, VCE * 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Current-Gain Bandwidth Product

(IE 50 mAdc, VCe " 15 Vdc. f = 200 MHz)

Output Capacitance

cob

4.5

(Vcb " is vdc, i = o, f = 1.o mhz)

FUNCTIONAL TEST

Power Gain

(VCc 13-6 Vdc, f =400 MHz, Pin = 0.25 W)

Output Power

Gpe

6.0

pout

1.0

Collector Efficiency

Watt

'Indicates JEDEC Registered Data

FIGURE 1 - 400 MHz RF AMPLIFIER TEST CIRCUIT

LI - 2 Turns #18 Tinned WIro, 3/16 I.D.

1/4" Long, Air Wound.
L2 - 2 Turns #18 Tinned WIro, 1/2 I.D.,
3/16" Long, Air Wound.

0.01 uF

Air Variable Capacitors

13.6 Vdc

1-10 pF"

Q-^RF
9-35 pF

RF Input >

t3r

FIGURE 2 - OUTPUT POWER versus FREQUENCY

2.0

1-10* pF^v

FIGURE 3 - PARALLEL EQUIVALENT OUTPUT CAPACITANCE

Pm*1.SWtlt
200 m

1.5

Pin SOtriW ^^*

1.0

.OWatt ^.^^

^ ^ ^3 7^

sia0mW"'* ^/*"*

^^ ^

K
^ \

IS mW
0.5

"^^s,

Si 20

^v.
^

tog

200

f. FREQUENCY (MHi)

f. FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-18

MOTOROLA

SEMICONDUCTOR

2N3959
2N3960

TECHNICAL DATA

The RF Line
1.8 GHz - 10 mAdc

HIGH FREQUENCY
TRANSISTORS
NPN SILICON

NPN SILICON HIGH-FREQUENCY TRANSISTORS

. designedfor high-speedcurrent-mode logic switching applications.

High Current-Gain-Bandwidth Product -

fT = 1800 MHz (Typ) @ Iq = 10 mAdc

Low Input and Output Capacitance CjD and C0b = 2.5 pF (Max)
Excellent Current-Mode Performance -

tr = 1.7 ns (Typ) @ lc = 30 mAdc

Low Collector-Base Time Constant -

rD'Cc = 25 ps (Max) @Iq = 10 mAdc- 2N3959

Current-Mode logic operation, because of the absence of storage time,

offers improved high-speed performance for digital applications. In addition,
the low impedance drive circuit offers improved delay, rise, and fall times.

The basic characteristics of importance in current-mode logic applications

are Current-GainBandwidth Product Iff), Input and Output Capacitance

(Cjt,and C0D),and BaseSpreading Resistance (r'D).

The 2N3959 and 2N3S60 offer a combination of extremely high fj valuss,
low capacitances, and low base spreading resistance which results in excep
tionally high speed in current-mode logic circuits.

i
-F t\

sunn
ruM

-^u-o

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage

Symbol

Value

Unit

STYLE1:
PINT EMITTER
2. BASE
3. COLLECTOR

VcEO

Vdc

Collector-Base Voltage

VCB

Vdc

Emitter-Base Voltage

VEB

4.5

Vdc

Total PowerDissipation @T^ " 25C

400

MAX

mW/C

531
452

584

0209

4.95

0178

0195

750

02t0

mW/C

0
E

533
0533

0.170

4.3

4.32
0.406

0.016

0021

-65 to +200

Derate above 25C

Total Power Dissipation &Tq 25C

2.3

Oerate above 25C

Operating and Storage Junction

WUMETERS

TJ.Tstg

G
H

Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Ambient

Thermal Resistance. Junction to Case

Symbol

Max

Unit

RflJA

0.436

C/mW

R0JC

0.233

C/mW

0.762

0483
0(06
2.54 BSC
0.914
117
0.711

12.70

L
M

1 1.27

0030

0250

(TO-18)

MOTOROLA RF DEVICE DATA

2-19

45'BSC
0.050 BSC

CASE 22-03
TO-206AA

'Indicates JEDEC Registered Data.

0230

0016
0019
otoo BSC
0.036
0046
0028
0048
0600

45* BSC
1.27BSC

N
P

INCHES
MAX

1 0050

2N3959, 2N3960
ELECTRICAL CHARACTERISTICS (TA - 25C unless otherwise noted.)
| Fig. No. | Symbol

Characteristic

Typ

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR|CEO

V(BR)CBO

v(BR)EB0

Vdc

4.5

Vdc

(lc- lOmAdc, lB-0)

Collector-Base Breakdown Voltage

(lC=10>jAdc, lE-0)
Emitter-Base Breakdown Voltage

(lE= lOuAdc, lc-0)

Collector Reverse Current

MAdc

'cex

(vCe '0 Vd, vEb 2.0 vdc)

0.005

MAdc

1.0

MAdc

(VCe - 10 Vdc, VEb 2.0 Vdc, TA - 150C)

5.0

Base Cutoff Current

<BL

(VCE - 10 Vdc, Veb 2.0 Vdc)

Collector Forward Current

"CEX

(VCe = 5.0 Vdc, VBE - 0.4 Vdc)

ON CHARACTERISTICS
DC Current Gain

hFE

(lC - 1-0 mAdc, VCE - 1 0 Vdc)

(IC - 10 mAdc, Vce = 1 0 Vdc)
(lC " 30 mAdc. Vce " 1 0 Vdc)

40
25

Collector-Emitter Saturation Voltage

400

vCE(sat)

Vdc

(lC 1-0 mAdc, Ib = 0.1 mAdc)

0c 30 mAdc, Ib - 3.0 mAdc)
Base-Emitter "on" Voltage

0.2
0.3

VBE(on|

Vdc

(lC 1-0 mAdc, Vce " 1.0 Vdc)

(lC " 30 mAdc, Vce " 1.0 Vdc)

0.8
1.0

DYNAMIC CHARACTERISTICS
Current-GainBandwidth Product

MHz

(lC 5.0 mAdc, Vce ** 4.0 Vdc, f = 100 MHz)

2N3959

1000

2N3960

1300

(IC10mAdc,VCE= 10 Vdc. f = 100 MHz)

2N3959

1300

2N3960

1600

2N3959

1000

(lC - 30 mAdc, VCe - 4.0 Vdc, f = 100 MHz)

2N3960

Output Capacitance

'
4

Cob

Cib

rb'Cc

1200
-

2.0

2.5

1.5

2.5

(Vcb " 4.0 Vdc, lE - 0, f 1.0 MHz)

Input Capacitance

(VEb " 0.5 Vdc, lc - 0, f - 100 MHz)

Collector-Base Time Constant

(lC 5.0 mAdc, Vce " 4.0 Vdc)

2N3959

(lC- 10mAdc. VcE" lOVdcl

2N3959

2N3960

dC" 30mAdc, Vce = 4.0 Vdc)

2N3959

2N3960

SWITCHING CHARACTERISTICS (Figure 7)

Turn-On Delay Time

'd(on)

(lC 10 mAdc, Vqu, - 1.0 Vdc)

(lC - 30 mAdc, Vout 1.0 Vdc!

Both Devices
2N3959

3.0
-

2N3960

2.2
1.7

Turn-Off Delay Time

'd(off)

(IC - 10 mAdc, Vout 1.0 Vdc)

(lC - 30 mAdc, Vout - 1.0 Vdc)

ns
-

1.6

Fall Time

(lC " 10 mAdc. Vout - 1.0 Vdc)

(lC 30 mAdc, Vou, - 1.0 Vdc)

2.0

Rise Time

(lC - 10 mAdc, Vout = 1.0 Vdc)

(lC - 30 mAdc. Vout - 1.0 Vdc)

2.4

Both Devices
2N3959

3.3
-

2N3960

2.3

1.9

'Indicates JEDEC Registered Data.

MOTOROLA RF DEVICE DATA

2-20

2N3959, 2N3960

FIGURE 2 - TYPICAL CURRENT-GAIN - BANDWIDTH

PRODUCT

FIGURE 1 - TYPICAL DC CURRENT GAIN

ISO

ta 100C

100

I 40

1.8

1.6

1.4

5S"C

2.0

2.2

2.0

1.0

1
ta- 5C
vce- ov

2S9C

.s*

| 50

^^
z

7.6

3.0

S.0

7.0

1.2

1.0

2.0.

3.0

7.0

70 100

FIGURE 4 - TYPICAL JUNCTION CAPACITANCE

FIGURE 3 - TYPICAL COLLECTOR-BASE TIME CONSTANT

5.0

IC. COLLECTOR CURRENT(mAI

IC. COLLECTOR CURRENT(mA)

rT*"
Cd,

S 20

p 16
3

Cjb

12
o

S
3 8.0

-J

,0 4.0
'e
0
8.0

0.1

0.2

lC. COLLECTOR CURRENT(mA)

MOTOROLA RF DEVICE DATA

2-21

0.3

0.5
1.0
2.0
3.0
Vr. REVEHSEVOLTAGE(VOLTS)

5.0

2N3959, 2N3960

TURN-ON AND TURN-OFF TIMES

FIGURES

FIGURE 6 - Vout - 2.0 Vdc

Vout = 1.0 Vdc

I
30
20

s.
Ss
>

S.
-

Tj 25C
RS RL
Vjn V00

^S_

Vout'2V

Tj 25C

"~"

Vin v0UI

ns -Rl

7.0

k^.if
V

/.u

's.\

"' 5.0
2N3S59'
i(ot

""**"S

S+

JN3S60}*--"

""*

'\N
Vs^

dlof

l( lot ) '
in

1.0

2.0

3.0

4.0

5.0

7.0

2.0

3.0

4.0

5.0

7.0

lC. COLLECTOR CURRENT(mA)

IC. COLLECTOR CURRENT (mAI

FIGURE 7 -

SWITCHING TIMES TEST CIRCUIT

Ovcc (*5.3 V)

I ^~
Innut PiiIca
0
^ Input
Puh

ToScopa
Channel 1

J18

Ground

Pianos

6 dB pad
t

4::i\j

tf.tf< 1.0ns
Pulso Width as 10 MS

^ To Scopo
Channel 2

-L- C,=s2.SpF

L_.L_J hiTV '

VEe (-25.3 VI (
This test set up is designed to simulate

a cascado of identical stages. .'.The sourco

V,n' Vout- 2volIs. VBB-1.0V

rosistanco (Rg) oquals tho load rosistanco

(HL). Values used in tha test are shown

lc ImAI

In tho table.

For Vin - Vout - 1 V. VBB - +0.5 V.

RL & RK vsluos appropriotoly reducod.

BL mi

rk mi

2.0 k

8.2

680

2.4

200

180

0.8

24.0

MOTOROLA RF DEVICE DATA

2-22

RElkSl)

1.0

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N4427

The RF Line
1W-175 MHz

HIGH FREQUENCY
TRANSISTOR

NPN SILICON HIGH FREQUENCY TRANSISTOR

NPN SILICON

. . . designed for amplifier, frequency multiplier, or oscillator

applications in military and industrial equipment. Suitable for use
as output driver or pre-driver stages in VHF and UHF equipment

Specified 175 MHz, 12 Vdc Characteristics Output Power = 1.0 Watt

Minimum Gain = 10 dB

Efficiency = 50%

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

VCEO

Vdc

'Collector-Base Voltage

VCB

Vdc

'Emitter-Base Voltage

VEB

Vdc

400

mAdc

400

mAdc

1.0

Watt

S.71

mW/C

'Collector-Emitter Voltage

'Collector Current Continuous

'Base Current Continuous

Total Device Dissipation@T^ =2SC

Derate above 25C

STYLE 1

PIN 1. EMITTER

_JU-DJPl

2 BASE

3COLLECTOR I+1 *036100141 (glTr] A| Hfe|

NOTES

V DIMENSIONING AND T0LERANCING PERANSI

Total Device Dissipation Tq 2SC

3.5

Watts

mW/C

-65 to + 200

Derate above 25C

'Storage Temperature Range

Tstg

ri4.5M. 1982

? CONTROLLING DIMENSION: INCH

3 DIMENSION J MEASURED FROMDIMENSION A
MAXIMUM

4 DIMENSION B SMALLNOTVARY MORE THAN025

(0.0101 IN20NE R. THIS20NE CONTROLLED FOR

Indicate* JEOEC Registered Data

AUTOMATICHANDLING

5 DIMENSION FAPPLIES BETWEEN DIMENSION P

ANDL DIMENSION DAPPLIES BETWEEN
DIMENSION L ANDKMINIMUM. LEAD DIAMETER
IS UNCONTROLLED IN DIMENSION PAN0
BEYOND DIMENSION K MINIMUM

FIGURE 1 -POWER OUTPUT versus FREQUENCY

1.6
1.4

^ OXBW^O^Os^
>y 0.08 wS^ >

MHUMETERS

S. 0X*wX

1X03 W"S.

3
O

| 0.6

MIN | MAX

8.51

7.75 | 850

0.335 I 0.370
0305

0335

610 ; 660

0240

0260

041 | 063

0016

E
f

0.23

1.04

0.009

0021
0041

041 I 048

00t6

0019

5.08 BSC
072
086
074
114

0028

tvi^S.

J
K

0,4

0.3
50

1270

1
70

tOO

150

200

300

f, FREQUENCY(KHi)

0203 BSC

1905

635 I -

Vi C'l 2Vd :

9.39

C
0

Pin OX

INCHES

MIN 1 MAX

DIM

2-23

0750

0250

254

45' BSC

127
-

0.100

CASE 79-04
TO-205AD

(TO-39)

MOTOROLA RF DEVICE DATA

0045

0500

45 BSC

0034

0029

0050
-

2N4427
ELECTRICAL CHARACTERISTICS (Tc = 25C unlessotherwise noted)

Characteristic

Symbol

Max

Min

Unit

OFF CHARACTERISTICS

'Collector-Emitter Sustaining Voltage

Vdc

vCEO(sus)

C "5.0 mAdc, lB-0)

'Collector-Emitter Sustaining Voltage

Vdc

vCER(sus)

(lC " 5.0 mAdc, RBE 10 ohms)

'Collector Cutoff Current

mAdc

'CEO

(Vce-12Vdc, 'b*>

0.02

'Collector Cutoff Current

mAdc

'CEV

(Vce * 40 Vdc, VBE - -1.5 Vdc)

0.1

(Vce " T2Vdc, VBE - -1.6 Vdc, Tc - +150C)

5.0

'Emitter Cutoff Current

mAdc

'EBO

(VEB-2.0Vdc. IC= 0>

0.1

ON CHARACTERISTICS

'DC Current Gain

hFE

dC - 100 mAdc. Vce " 5.0 Vdc)

dC - 360 mAdc, Vce " 5.0 Vdc

200

10
5.0

'Collector-Emitter Saturation Voltage

Vdc

vCE(sat)

(IC 100 mAdc, lB - 20 mAdc)

0.5

DYNAMIC CHARACTERISTICS
'Current-Gain Bandwidth Product

MHz

(lC - 60 mAdc. VCE - 15 Vdc. f - 200 MHz)

500

'Output Capacitance

cob

(Vca - 12 Vdc, l 0, f - I.O MHz)

4.0

FUNCTIONAL TEST

'Power Input (Figure 2)

(Pout" 1 0 W, Vce " 12 Vdc, f - 175 MHz)

100

Gpe

Common-Emitter Amplifier Power Gain

(Pin - 100 mW, Vce - 12 Vdc, f 175 MHz)

'Collector Efficiency (Figure 2)

<pout" 1 0 w- VCC" 12 Vdc, f - 175 MHz)

'Indicates JEDEC Registered Oata

FIGURE 2 - 175 MHx RF AMPLIFIER CIRCUIT FOR POWER-OUTPUT TEST

-l

<C1.C2.

RF Input)RF Output

L3: 2 turns No.

C3,tndC4: 3-30pF

16 win.

C5: 1.000 pF
C6: 0.01 jiF

1/4" ID.

LI: 2 turns No.

16 wire.

3/16" 10,

1/4" long
L2: Ftrritt choke,
Z-450 ohms

MOTOROLA RF DEVICE DATA

2-24

1/4" long
L4: 4 turns No.
16 win.

3/8" 10,

378"long
Q: 2N4427

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N4428

The RF Line
0.75 W - 500 MHz
RF POWER
TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON

. . . designed primarily for use in large signal VHF and UHF

amplifier output stages in military and industrial communications
applications.

Specified 28 Volt, 500 MHz Characteristics Output Power = 750 mW

Typical Gain = 10 dB
Efficiency = 35%

'MAXIMUM RATINGS
Symbol

Value

Unit

VCEO

Vdc

VCB

Vdc

VEB

3.5

Vdc

425

mAdc

Base Current - Continuous

150

mAdc

Total Device Dissipation @Tc25C

3.5

Watts

mW/C

-65 to +200

Rating

Collector-Emitter Voltage
Collector-Base Voltage

Emitter-Base Voltage
Collector Current Continuous

PIN I EMITTER

Derate above 25C

Operating and Storage Junction

Temperature Range

STYLE1

Tj.Tjtg

NOTES:
1. DIMENSIONING ANDT0LERANCING PERANSI

'indicates JEDEC Registered Data.

FIGURE 1 - 600 MHz TEST CIRCUIT

ISM pF

2 STUB

TUNER

-0

Y14.5M.1932.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION J MEASURED FROMDIMENSION A
MAXIMUM.
4 DIMENSION B SHALLNOTVARY MORETHAN0.25
10.0101 INZONER. THISZONECONTROLLED FOR
AUTOMATIC HANDLING.
5. DIMENSION F APPLIES BETWEEN OtMENSONP
AND L DIMENSIOND APPLIESBETWEEN
DIMENSION L ANDKMINIMUM. LEAD DIAMETER
IS UNCONTROLLED IN DIMENSION P AND
BEYOND DIMENSION K MINIMUM.

10 pF

2 STUB
TUNER

_JU_Dm

2 BASE

3COLLECTOR 11036180141 ""[7] A| Hj

-If"

MHUMETERS
MIN
MAX
851
939
775
850

0335
0305

C
0

610

660

0240

0.41

E
F

023
041

053
104
043

0009

0021
0041

0016

0019

5 08 BSC
06*

0028

DM
A

OpF 5*

G
H
J

0.72
074

1.14

1905

1270

6.35

45" BSC
127
254

P
R

INCHES
MAX

0.016

0200 BSC
0034
0045
0500
0750
0029
0 250

0100

CASE 79-04
TO-205AD

(TO-39)

MOTOROLA RF DEVICE DATA

2-25

45 BSC

0370

0335
0260

0050
-

2N4428

ELECTRICAL CHARACTERISTICS(Tc 25C unlessotherwise noted)

Characteristic

Symbol

Typ

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage

(lC " 20 mAdc. IB - 0)

VCEO(sus)

VCER(sus)

Collector-Emitter Sustaining Voltage

(lC - 20 mAdc, Rqe 10ohms)

Collector Cutoff Current

Vdc

mAdc

'CEX

(VCe = 55 Vdc, VBE(on) =-1.5 Vdc)

Emitter Cutoff Current

<EBO

1.0
mAdc

(VEb - 3.5 Vdc, lC 0)

0.1

ON CHARACTERISTICS
DC Current Gain

"FE

(lC - 50 mAdc, Vce - 5.0 Vdc)

C " 400 mAdc, Vce " 5.0 Vdc)

20
5.0

200

DYNAMIC CHARACTERISTICS
Current-Gein-Bartdwidth Product

700

1000

MHz

(1 c 50 mAdc, Vce 20 Vdc, f =200 MHz)

Output Capacitance

Cob

3.5

1.2

(Vcb - 28 Vdc, It; - 0. f - 1.0 MHz)

FUNCTIONAL TEST

Power Input

(Figure 1)

(Pout" 'SO mW, Vce 28 Vdc, Rs - 50 Ohms,

f - 500 MHz)

Collector Efficiency (Figure 1)

(Pout" 750 mW, Vce " 28 Vdc, Rs - 50 Ohms,

f = 500 MHz)

'Indlcatos JEDEC Registered Data.

FIGURE 3 - OUTPUT POWER versus FREQUENCY

FIGURE 2 - CURRENT-GAIN-BANDWIDTH PRODUCT

: 1500

TEST CIHCUIT FIGURE 1

]
vce-

VCE- 15 Vdc

28 Vdc

1.25
Pin'lOOmW

75 mW

500

50 mW

25 mW

^^
20

350

400

f. FREQUENCY (MHt)

IC.COLLECTOR CURRENT{mAI

MOTOROLA RF DEVICE DATA

2-26

MOTOROLA

SEMICONDUCTOR

2N4957
2N4958
2N4959

TECHNICAL DATA

The RF Line
lC = -30 mA
PNP SILICON HIGH FREQUENCY TRANSISTORS

HIGH FREQUENCY
TRANSISTORS

... designed for high-gain, low-noise amplifier, oscillator and

mixer applications.

PNP SILICON

Low Noise Figure @ 450 MHz

NF = 3.0 dB (Max) 2N4957
= 3.3 dB (Max) 2N4958
= 3.8 dB (Max) 2N4959

High Power Gain @ 450 MHz

Gpe = 17 dB Win} 2N4957

= 16 dB (Min) 2N4958
= 15dB(Min) 2N4959

High Current-Gain Bandwidth Product

fj = 1.2 GHz (Min) @ |E = -2.0 mAdc 2N4957

= 1.0 GHz (Min) @ Ie = -2.0 mAdc 2N4958, 2N4959

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

-30

Vdc

Collector-Base Voltage

vCBO

-30

Vdc

Emitter-Base Voltage

Vebo

-3.0

Vdc

Collector Current Continuous

-30

mAdc

Total Power Dissipation @ T^ = 25^

Derate above 25C

Operating and Storage Junction

Temperature Range

TJ' Tstg

200

1.14

mWVC

-65 to +200

'Indicates JEOEC Registered Data.

STYLE 10:
PIN 1 EMITTER
2. BASE
3. COLLECTOft
4 CASE
NOTE:ALL RULESAND NOTESASSOCIATED KITH TO-72
OUTLINE SHALLAPPLY
MUJKETERS
KM

KIN

5J1

4S2

4.32

041

E
F

041

495
533

0178

0.195

0.170

0210

053
076
048

0016
-

0016

0036

0046

0028

0O48

1270

I
M

6JS

45'BSC
127 BSC

0100 BSC

1.17

091
0.71

0503

| 127

(TO-72)

2-27

0250
45 BSC
0050 BSC

CASE 20-03
TO-206AF

MOTOROLA RF DEVICE DATA

0021
0033
0019

1.22

INCHES
MIN
MAX
0209
0233

254 BSC

G
H

MAX
584

1 0050

2N4957, 2N4958, 2N4959

'ELECTRICAL CHARACTERISTICS (TA = 25*C unless otherwise noted.)

Symbol

Min

Collector-Emitter Breakdown Voltage

C = -1.0 mAdc, Ib = 0)

V(BR)CEO

-30

Vdc

Collector-Base Breakdown Voltage

C = -100/iAdc, Ie = 0)

V(BR)CBO

-30

Vdc

Emitter-Base Breakdown Voltage

V(BR)EBO

-3.0

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS

Vdc

E = -lOOjiAdc, lc = 0)
Collector Cutoff Current

jxAdc

"CBO

(vCb = -lovdciE = oi
(vCb = -io vdc, ie = o, ta = isox)

-0.1
-100

ON CHARACTERISTICS
DC Current Gain

hFE

150

1200

1600

2500

1000

1500

2500

0.4

0.8

flC = -2.0 mAdc, Vce = -10 Vdc)

DYNAMIC CHARACTERISTICS

Current-Gain Bandwidth Product (1)

MHz

(l = -2.0 mAdc, Vce = -10 Vdc, f = 100 MHz)

2N4957

2N4958, 2N4959

Collector-Base Capacitance
(Vcb = -io vdc, Ie = o, f = 1.0 mhz)

Ccb

Small-Signal Current Gain

hfe

200

rb'Cc

1.0

8.0

(lC = -2.0 mAdc, VCE = " 10 Vdc, f = 1.0 kHz)

Collector-Base Time Constant

(IE = -2.0 mAdc, Vcb = -10 Vdc, f = 63.6 MHz)

Noise Figure

C = -2.0 mAdc, Vce = -10 Vdc, f = 450 MHz)

2N4957
2N4958

dB
-

2N4959

2.6

3.0

2.9

3.3

3.2

3.8

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

dB J

Gpe

(Vce = -10 Vdc, lC = -20 mAdc, f = 450 MHz)

2N4957

2N4958

2N4959

'Indicates JEDEC Registered Data.

(1) ff is defined as the frequency at which |hfe| extrapolates to unity.

MOTOROLA RF DEVICE DATA

2-28

25
-

25
25

2N4957, 2N4958, 2N4959

FIGURE 1 NOISE FIGURE AND POWER GAIN

FIGURE 2 UNILATERAUZED POWER GAIN

versus FREQUENCY

TEST CIRCUIT

i
ii^
COMMON EMITTER

HQ.SOOI.ml

> p Jtr t

COMMONBASE

L.5 ^t3
Cl.OjCl.C4.es 1 0-10 f VKMk far DaktK
nawtTypa Capacrtar

11 SinrniM has t Siati 10>

vce
ic-

Long.1/4"Oiwntw
L SMcfliti4InaS>Sucllt}S

La^. 1/4- !>. twU l/l '

-10 Vdc
-2.0 mA

IraaKtlEM

13 OS"logl<1(4WGW>lO}nai

IrommlPnanfltgU

100

200

300

500

700 1000 1500

I. FREQUENCY (MHi)

RGURE 4 NOISE RGURE AND POWER GAIN

versus COLLECTOR CURRENT

FIGURE 3 NOISE FIGURE versus FREQUENCY

(H$&lc OPTIMIZED FOR BROAD BANC PERFORMANCE)

f = 450 MHi

tjVce " -lOVde

ilRS-150
JJlC -1.0mA

Dill

l TlrT

lllll'l

lllllljl

8.0

Si 60

jtM

6" 0

llll

/l
/

illr

3.0

1|lf 1I

nil

Rs150
" VCE

Opt
20

/'
<

,'
/

TYPICAL. /.

(tf

TYPICAL
2.0

1" u

if 111

"ffl

1.0

-0.2 -0.3

-0.5-0.7-1.0

-2.0-3.0

-5.0-7.0-10

lOCOLLEaOfl CURRENT (mAdc)

l FREQUENCYIMKJl

FIGURE 5 CONTOURS OF NOISE RGURE versus

SOURCE RESISTANCE AND COLLECTOR CURRENT

RGURE 6 CONTOURS OF NOISE RGURE versus

SOURCE RESISTANCE AND COLLECTOR CURRENT

1000

700
r"

1 300
5

203

SCO

1.81
N

A
V

1 2.0 dB

o
3 5dB

70
I
X

TT
-
i-

-0.2 -03

100

vce- -nvtlc

1 1

N F = 3.5 <a

20 1 = msMm
10

n
s?

203

=r 3 OdB

^ 'v

300

'"o
N
V

1.8 dB

-2. ita -

3.0(183

50
30

vce- -iovdc

N F = 9.5 d 8

1 1

-0.5-0.7-1.0

-2.0 -3.0

-5.0-7.0-10

-0.2

-0.3

-05 -0.7 -1.0

-2.0

-30

lC COLLECTOR CURRENT (mAdc)

lC COLLECTOR CURRENT ImAdcl

MOTOROLA RF DEVICE DATA

2-29

-5.0 -7.0 - tO

2N4957, 2N4958, 2N4959

COMMON EMITTER CIRCUIT DESIGN DATA

Vce = -10 Vdc lc = -2.0 mA

FIGURE 7 - TRANSDUCER GAIN
versus FREQUENCY

FIGURE 8 - LINVILL STABILITY FACTOR

versus FREQUENCY

till

(NOTE 11

(NOTE 1)
Ran ge of

~-^ 1.2

Uncondi-

Pot tntill. .tionil

3.0

nsta

>ility Stability

2.0
2.0

4.0*
10*

1.0

tOO

200

FIGURE 9 -

100

200

300

500 700 1000 1500

f. FREQUENCY (MHz)

1. FREQUENCY IMHi)

FIGURE 10 -

LOAD ADMITTANCE

versus FREQUENCY (IMAGINARY)

versus FREQUENCY (REAL)

k- 10

(1 0TE )

(NO TEI )

4.0

k - 1.2V
2.0

ioo^^

1^
100

200

100

200

300

I. FREQUENCY(MHi)

f. FREQUENCY(MHr)

FIGURE 12 - SOURCE ADMITTANCE

FIGURE 11 -SOURCE ADMITTANCE

versus FREQUENCY (IMAGINARY)

versus FREQUENCY (REAL)

1
(NOT Ell

6
E

(NOTE 1)

s
4

kt0

k=l.2v

4.0X
O

4.0.
o

2.0.

>IE

2
45

tOO

200

300

500 EDO

I. FREQUENCY IMHi)

I, FREQUENCY (MHt)

"C" is less than 1.0. the circuit is unconditionally stable. When "C" is greater
than 1.0. the circuit is potentially unstable.
The Stern "K" factort has been defined to determine the stability of a

NOTE1

Figures 7 through 18areincluded to assist the circuitdesigner in determin

ing the stability of his particular circuit. Two stability criteria aregiven in

practicalamplifier terminated in finite load and source admittances. If "K"

is greaterthan 1.0. the circuit will be stable. If less than 1.0, the circuit will

these figures.

The Linvill "C" factor' is a measure of transistor stability when (he input

be unstable. For further details, see Application Note AN-215A

I "Sutxlitv and Ponwr Gam ol Tuned Transistor Amplilnn." Arthur P. Sltm. Proc.

and output are terminatedin the worst-case (opencircuit)condition.When

* "Transistorsand Actiw Circuits." LinrSI and Gibbons. McGrm Hill. 1961

IRE.. March 1967.

MOTOROLA RF DEVICE DATA

2-30

2N4957, 2N4958, 2N4959

COMMON BASE CIRCUIT DESIGN DATA

Vce = -10 Vdc lc = -2.0 mA

FIGURE 14 - LINVILL STABILITY FACTOR
versus FREQUENCY

FIGURE 13 - TRANSDUCER GAIN

versus FREQUENCY
ll

(NOTED

NOTE 1)

k- 1.2

2.0

Rangeoi

\
\

Rangeol

Unconditional -Pottn

4.0

Stability Instability

\ 1

1 |

\ 1

500

200

700

LOAD ADMITTANCE

0.8

FIGURE 16 -

1 1 1

(NOTE 11

2
8.0

4.0/

0.4

k* 10 /

S 6.0
o

0.2

4.0

2
2

3 6.0

/ 4.0/
300

500

700

2.0

^^^\i
500

1.2 thr i l 1

| *&

y,2.0/

10 10

"""~1.2
0
2 DO

3 8.0

*" 2.0^

(NOTE 1)

1500

LOAD ADMITTANCE

1000

| 12

k-10/
<z

700

versus FREQUENCY (IMAGINARY)

versus FREQUENCY (REAL)

1 "

500

f. FREQUENCY<MHj)

I. FREQUENCY (MHll

FIGURE 15 -

300

2.0

700

500

I, FREQUENCY (MHi)

700

..FREQUENCY (MHr)

FIGURE 17 -SOURCE ADMITTANCE

FIGURE 18 - SOURCE ADMITTANCE

versus FREQUENCY (REAL)

versus FREQUENCY (IMAGINARY)

k 1.2

(NOTE 11

75"
t

"io"

f. FREQUENCY (MHtl

f. FREQUENCY (MHi)

MOTOROLA RF DEVICE DATA

2-31

2N4957, 2N4958, 2N4959

FIGURE 19 SMALL-SIGNAL CURRENT GAIN

FIGURE 20 POLAR hfe

versus FREQUENCY
0

vX
3

-2.0

\ IhfelldB)

31
2

J! no

40
u

- V

vce - -h

C = - 2.0 mA

200

-10
-12

I -14

\
^lmlh(e) Ns

N<
Re(hfe

Vdc

I& = -10 Vdc

<300

-8.0

\ N.

700?

-6.0

s
o

1500MHz/

-4.0

^---

iooV

-16
-18
-20

*;. ^v.

SL>5

-22
-24

-26

|'c -

50V

-28

*.,:

50 70

100

200

300

-30

500 700 1000 1500

- 6.0 - 4.0 - 2.0

2.0

f, FREQUENCY (MHz)

4.0

6.0

Re (tyel

FIGURE 21 fj versus COLLECTOR CURRENT

FIGURE 22 DC CURRENT GAIN

8.0

5""

/
fcg 20
OVdc

-2.0

-4.0

-6.0

-0.1 -0.2

-8.0

-0.5

IOCOLLECTOR CURRENT ImAdcl

-1.0

-2.0

-5.0

-10

-20

-50

-100

lC. COLLECTOR CURRENT (mAdc)

FIGURE 23 CAPACITANCE

FIGURE 24 COLLECTOR CHARACTERISTICS

3 0

2.0

Tc = 26 C

I ,0

C,n

p^i

| 0.7

VERTICAL SCALE

,!rV
x\

lC = -l.OmADIV

O 0.5

""""""""^

Ccb
lb = -0.02 mASTEP

msssmmsssm
-0.1 -0.2

-0.5

-1.0

-2.0

-5.0

-10

-20

-50 -100

HORIZONAL SCALE-VCe = -1.0V.OIV

REVERSE VOLTAGE (VOLTS)

Apply reverso bias between colleclo

and base and measure capacitance

between these terminals. Emitter is

everse bias between emitter

^-^ J Applv '"
measure capacitance

fy^\ an<' base

b'1st and

Of(

I between

these lerminals. Collector is

Apply reverse bias between collector

and base and measure capacitance
between these terminals. Emitter is

guarded.

open.

L- Cjb6

MOTOROLA RF DEVICE DATA

2-32

2N4957, 2N4958, 2N4959

Y PARAMETERS versus CURRENT
(f = 450 MHz)
COMMON EMITTER

COMMON BASE

Vcb = -10 vdc

Vce = -io vdc

Vcb = -isvdc

FIGURE 25 -

Vce = -isvdc

FIGURE 26 -

INPUT ADMITTANCE

*i"ie

gSE
9ie,

Is 8.0

__..

6.0

S? 4.0
z

.s 2.0
>-

0
FIGURE 28 -

FIGURE 2 7 - FORWARD TRANSFER ADMITTANCE

-t^
S^

<^C rr"^

;*<? '"-"""

Ib|h

lblc
V

;;40

v-*

FORWARD TRANSFER ADMITTANCE

fca^. .

-Sib

- ;

=-= s s -

n
:IGURE 29 -

FIGURE 30 - OUTPUT ADMITTANCE

OUTPUT ADMITTANCE

4.0

*i"oe

1.0

9oe
1

FIGURE 31 -

FIGURE 32 -

REVERSE TRANSFER ADMITTANCE

1.4

-ibrb
<

:-==""

1.2

ffo.4
a:

= <0.(

-2.0

-4.0

-6.0

-2.0

lc. COLLECTOR CURRENT (mAdc)

-4.0

-6.0

lc. COLLECTOR CURRENT (mAdc)

MOTOROLA RF DEVICE DATA

2-33

-8.0

2N4957, 2N4958, 2N4959

COMMON BASE y PARAMETER VARIATIONS

(Vcb = -10 Vdc, lc = -2.0 mAdc)
y PARAMETERS versus FREQUENCY

POLAR y PARAMETERS versus FREQUENCY

FIGURE 34 - v^ INPUT ADMITTANCE

FIGURE 33 - yib INPUT ADMITTANCE

Sib

-5.0

45t
too.

_-IO

E 30
z

1-15

1500 MHz

--20

-ibib

"s^UOO

1000

-25

100

200

300

500

700

1000

450

600^

750

-30

1500

5.0

f. FREQUENCY (MHz)

gjj,(mrrthoj)

FIGURE 35 -vfb FORWARD TRANSFER ADMITTANCE

FIGURE 36 - vfb FORWARD TRANSFER ADMITTANCE

-5

-ma
40

600 ''u

1000

POO^

450

I 30

-IM

1500 MHz

1 20

*ibfb

So o

/200

-10

#100

-20
-30

100

200

300

500

200

1000

1500

-40

-30

-20

-10

..,.,

5(b(mmhoi)

f, FREQUENCY (MHz)

FIGURE 38 - yob OUTPUT ADMITTANCE

FIGURE 37 - yob OUTPUT ADMITTANCE

P 1500 MHz
,

J 8.0-

r
t 10

1 6.0 T_i
j
t750
i

.bob

100

200

300

4.0

600
450

9ob .

500

700

1000

2.0 300
200
0

1500

2.0

4.0

6.0

8.0

FIGURE 39-yrb REVERSE TRANSFER ADMITTANCE

45 MHz
100 1
1
200
300
1

1
-0.4

450

1
600

|-0.8

750

1
1000

<1.2

1
1200
1

-1.6

300

FIGURE 40 - yrb REVERSE TRANSFER ADMITTANCE

200

gob(mmhos)

f. FREQUENCY (MHz)

500

700

1000

1500

J 1500
-1.6

-1.2

-0.8

-0.4

grb (mmhoi)

f. FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-34

*0.4

a
o

en
<

VsT

jb(e(mmhos)

(mmhoi)

yrl. REVERSE TRANSFER ADMITTANCE

ooo

uiooq

s~\f

S -

s
o

"s 3

^- jt.

jbol(mmhos)

Vg. OUTPUT ADMITTANCE (mmhoi)

5 a

(mmhoi)

jbj, (mmhos)

lip

Yft. FORWARD TRANSFER ADMITTANCE

Yj,.INPUT ADMITTANCE (mmhot)

jj>

J 1
31

oil

jbje.(mmhoi)

_N P> P> _ _ MUM

^.O OOQOON>AOCaON^.

O
c
3

-1

-4

>
O

o
c
3D

z
(>

=1
m

^
=}

<
m

s
3
o

Br.
<0
Ol

*>
(D

j>i

IO
fc
<o
en

MOTOROLA

SEMICONDUCTOR

2N5031
2N5032

TECHNICAL DATA

The RF Line
2.5 dB @ 450 MHz - 2IM5031
3.0 dB @ 450 MHz - 2N5032

HIGH FREQUENCY
TRANSISTORS

NPN SILICON HIGH-FREQUENCY TRANSISTORS

NPN SILICON

. . . designed primarily for use in high-gain, low-noise, smallsignal amplifiers.

High Current-Gain - Bandwidth Product -

Low Noise Figure @ f = 450 MHz -

fj = 1000 MHz (Min) @ \q = 5.0 mAdc

NF = 2.5 dB (Max) - 2N5031
= 3.0 dB (Max) - 2N5032

High Power Gain

Gpe = 14 dB (Min) @f = 450 MHz

'MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage

Emitter-Bess Voltage
Collector Current Continuous

Total DeviceDissipation @Ta " 2SC

. Symbol

Value

Unit

VcEO

Vdc

VCBO

Vdc

VEBO

3.0

Vdc

mAdc

200

1.14

mW/C

TJ'Tstg

-65 to +200

Derate above 2SC

Operating end Storage Junction
Temperature Range

V^1

NOTE: AU RULES ANDNOTES ASSOCIATED WITHTO-72

OUTLINE SHALLWW.

'Indicates JEDEC Rogittorod Data.

STYLE 10:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
4. CASE

B
C
D
E
F

lOUMETERS
MAX
UN
5J1
584
*S1
13?
0.41

H
K
L

043

2 54 BSC
OSI
0.71
12.70
635

117
127
_

45" BSC

M
N

177 BSC

07X

0173

0.195
0710
0021

0.170

0.016

076

041

G
1

4
S33
053

MCKES
MAX

0.209

0016

1 .77

CASE 20-03

TO-206AF

(TO-72)

MOTOROLA RF DEVICE DATA

2-36

00
0019

0.100 BSC
0035
00*6
0043
0028
0500
0750
45" BSC
0050 BSC

I 0050

2N5031, 2N5032

ELECTRICALCHARACTERISTICS (Ta =25C unlessotherwisenoted)

Characteristic

Symbol

Min

v(BR(CE0

v(BR)CB0

V(BR)EB0

Tvp

Max

Unit

OFF CHARACTERISTICS

'Collector-Emitter Breakdown Voltage

(lC-1.0 mAdc, lB-0>
'Collector-Base Breakdown Voltage
(lC 0.01 mAdc. Ie - 0)

'Emitter-Base Breakdown Voltage

Vdc

3.0

Vdc

(lE-0.01 mAdc, lc-0>

'Collector Cutoff Current

'CBO

WcB-6.0Vdc.lE-0)

1.0

nAdc

ON CHARACTERISTICS

I 'DC Current Gain

hFE

I (lc -1.0 mAdc. Vce- 6.0 Vdc)

300

DYNAMIC CHARACTERISTICS

'Current-Gain-Bandwidth Product

1000

C - 5.0 mAdc, Vce " 6.0 Vdc, f - 100 MHz)

'Output Capacitance
(Vce - 6.0 Vdc. ie - o, f - o.i mhz)

ccb

Collector-Base Time Constant

1.3

rb'Cc

(lC - 6.0 mAdc, Vce - 6.0 Vdc, f = 31.8 MHz)

'Noise Figure (Figure 1)
(lC - 1.0 mAdc, VCe " 6.0 Vdc, f =450 MHz)

5.0

3500

MHz

1.5

PF
ps

2N5031

2.5
3.0

2N5032

FUNCTIONAL TEST

'Common-Emitter AmplifierPower Gain (Figure 1)

Qpe

(Vce " 60 Vdc. lc - 10 mAdc. f - 450 MHz)

'Indicates JEDEC Registered Data.

"'Tuned for Minimum Nolte.

FIGURE 1 - POWER GAIN AND NOISE FIGURE TEST CIRCUIT

FIGURE 2 - COLLECTOR-BASE CAPACITANCE versus VOLTAGE

_
2.5r-

jSHIilO(GltOUKOEDI

CI.CJ.M. CI-OJ-!0,f
O-01-S.lpF

1.0

CJ.CS -503 if
1 - HI

n-iat
v**mn
II -1/4- tcts fiat SaUar Rand. 11/1" lano.
an* T Iraai mncUlft in aarlUal

U - IH- lnsl<M.SaMaiRtM. M/riaaa

head l/rrtamlaaaxinaitfaiaariM
am AWd. aNdl adatn rha MCbl.

OWMtravnaaiaMaalCr. Oviawiyaii
tl/irtoaanm*
L< - l/I Tan Hi Vir aaovt 11 art S7"

!.0

lon|. (owfLSI

4.0

6.0

8.0

VCB.COLLECTOR - BASEVOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-37

2N5031, 2N5032

FIGURE 4-Sn AND S22

FIGURE 3 - CURRENT-GAIN-BANDWIDTH PRODUCT

VCE 6.0 Vile

3.0

5.0

7.0

IC.COLLECTOR CURRENT(mAdc)

FIGURE 6-S21

FIGURES -Si2

^'^OrVtT lffW/WM
vK\\>Vn
V2 r^JJ^C^xJK^v

' 77-Cr~-'050 MHOO

r~ff- 6S0HL^---3^g|nPp^rrti "Pi

'I'llJ/l JSb

fti oj\\Yx^bQ^CTr^

^^\S\ /fÔC sjC-T / 1 A\ Jr\ jvVÔ^/^yîi

"T\ \ .OOvN. 7^ 7^?J

'/\/i5o\ihX/ //ri
\. /

jC /

l\JwPvY s21 WolUgei>vc3?

E "EeSX
V
Ratios) >V/*3
f5pr\-\x
\ a. >^>

2-38

nLUr

ic-IOiA*<^^

VCE-60V4C N^

TT\ ZG-ZL-iOOtiim vX^

/"-A-/. /

rAtHrr

MOTOROLA RF DEVICE DATA

"TT\\

1 \ \A-*V\A^"\&2

hAaPv^I

2N5031, 2N5032

FIGURE 7 - NOISE FIGURE versus FREQUENCY

FIGURE 8 - POWER GAIN versus FREQUENCY

4 n

IC -1.0 mAi 1c

Vc t - u

2N5D32/
TUNED FOR

- MINIMUM
2N503

2N5032

2.0

NoiSE

1.0

100

200

300

400

500

80 SO 100

f. FREQUENCY (MHi)

200

300

(.FREQUENCY (MHz)

FIGURE 10 - OUTPUT ADMITTANCE versus FREQUENCY

FIGURE 9 - INPUT ADMITTANCE versus FREQUENCY

VCE-6.

IVdc

VCE-6.0 Vdc
ic*io tnAdc

ici. JraAdc

t>M

b
9oe

100

150

200

300

400

500

200

300

400

500

FIGURE 12 - REVERSE TRANSFER

ADMITTANCE versus FREQUENCY

FIGURE 11 - FORWARD TRANSFER

ADMITTANCE versus FREQUENCY

vce * bo vdc
ic-1-0 mAdc

Vce S.0 Vdc

IC- 1-0 mAdc

Sra

Sfa

brl*
*

100

-IX.

ISO

200

300

400

700

f. FREQUENCY(MHz)

f. FREQUENCY (MHz)

SQ0

700

200

1000

(.FREQUENCY (MHz)

300

400

(.FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-39

500

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N5108

LOW-1 GHz

HIGH FREQUENCY
TRANSISTOR
NPN SILICON

NPN SILICON HIGH-FREQUENCY TRANSISTOR

... designed for amplifier, frequency multiplier, or oscillator applica
tions in military and industrial equipment. Suitable for use as output,
driver, or pre-driver stages in UHF equipment and as a fundamental
frequency oscillator at 1.68 GHz.

Specified 1 GHz, 28 Vdc Characteristics Output Power = 1.0 Watt

Minimum Gain - 5.0 dB

Efficiency = 35%

Typical 1.68 GHz, 28 Vdc Characteristics Output Power = 0.3 Watt

Efficiency = 15%

rrS

STYLE1

PIN 1 EMITTER
2 BASE

3COLLECTOR

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

vCEO

Vdc

'Collector-Emitter Voltage
(RBE" lOOhmi)

VCER

Vdc

'Collector-Base Voltage
'Emitter-Base Voltage

VCB

Vdc

VEB

3.0

Vdc

'Collector Current Continuous

0.4

Adc

'Total DeviceDissipation<e> Tc 26C

3.5

Watts

0.02

W/C

Derate above 25C

'Storage Temperature Range

Tstg

-65 to +200

IT)AJ [ Hr;

NOTES:
1. OtMENSIONING ANO T0LERANC1NG PER ANSI
YI4SM. 1982.
2. CONTROUING DIMENSION:INCH
3 OlMENStONJ MEASUREDFROMOlMENStONA
MAXIMUM.
4 DIMENSIONB SHALLNOT VARYMORETHAN0.25
10.0101 IN ZONER. THISZONECONTROLLED FOR.
AUTOMATIC HANDLING
S. DIMENSIONF APPLIESBETWEENDIMENSIONP
AND L DIMENSION0 APPLES BETWEEN
DIMENSIONL ANDK MINIMUM.LEADDIAMETER
IS UNCONTROLLED IN DIMENSION P AND
BEYONDDIMENSIONK MINIMUM.
MILLIMETERS
DM

851

7.75
6.10
041

C
E
F
G
H

a.M

INC1UES
Mm
MAX
0335
0370
0.395
0.335

660
0.53
1.04

02(0
0016
0.009

MM 1 MAX

'indicates JEDEC Registered Data.

JU-Q
![ *03SI0W)

0.23
041

0.(8

508BSC

J
K

0.72
0.74

066
1.14

12.70

1905

635

P
R

45BSC

1 1.27

2.S4 1 -

0019
0.016
02TO8SC
0.028

0.034

0029
0500

0.045
0750

0.250

(TO-39)

2-40

45BSC
0050
0.100
_

CASE 7904
TO-205AD

MOTOROLA RF DEVICE DATA

0.260
0021
0041

2N5108

ELECTRICALCHARACTERISTICS (TC 25C unlessotherwisenoted)

Charactef Istic

Symbol

Min

VcER(sus)

V(BR)CB0

Vdc

V(BR)EB0

3.0

Vdc

Typ

Max

Unit

OFF CHARACTERISTICS

'Collector-EmitterSustainingVoltage
Uc " 5.0 mAdc. Rbe " 10 ohms)
Collector-Base Breakdown Voltage

Vdc

(IC -0.1 mAdc, lg-0)

'Emitter-BaseBreakdownVoltage
E - 0.1 mAdc. Ic - 0)
'Collector Cutoff Current

'CEO

uAdc

(Vce - 15 Vdc. IB - 0)
'Collector Cutoff Current

CES

(VcE-S0Vdc.VBE-0)

(VCE- 16 Vdc. VBE - 0, TC 150C)

1.0

uAdc

mAdc

0.5

Vdc

ON CHARACTERISTICS

Collector-Emitter Saturation Voltage

VCE (sat)

(lC - 100 mAdc. IB - 10 mAdc)

DYNAMIC CHARACTERISTICS

'Current-Gain-Bandwidth Product

1200

MHz

(lC - 50 mAdc. Vce " 15 Vdc. f - 200 MHz)

'Output Capacitance
IVcb 30 Vdc. Ig - 0. f - 1.0 MHz)

Cob

1.3

3.0

FUNCTIONAL TEST

'Common-Emitter Amplifier PowerGain(Figure 1)

(Pout - 10 W. VCC - 28 Vdc. IC - 102 mAdc.

GpE

5.0

pout

1.0

f- 1.0 GHz)

Power Output (Figure 1)

Watt

(Pj 316 mW, Vce - 28 Vdc. f - 1.0 GHz)

'Collector Efficiency
(Pj- 316 mW. Vce " 28 Vdc, f - 1.0 GHz)
Power Output (Oscillator) (Figure 2)

0.3

peut

(VCE 20 Vdc, VEB - 1.5 Vdc, f - 1.68 GHz)

(Minimum Efficiency - 15%)
'Indicates JEOEC Registered Data.

MOTOROLA RF DEVICE DATA

2-41

Watt

2N5108

FIGURE 1-1 GHz RF AMPLIFIER OUTPUT

POWER TEST CIRCUIT

VCC-+28V
BIAS
TEE

dl: 1" Input lint, ctnttr conductor width 0.260"

d2: 1" Output lint, ctntcr conductor width 0.126"

Q: 2N5I08
Ft: 3.9 ohms

T1,T2: Microlib Ooubhj StubTumr,or Equtalent

BatTn: MicroUb 08N,or Equivtltnt
TransistorMount: 1/32" Microttripboard

Not*: Imptdinct masurtmtfltsiramtda it transistorsockitpins.

FIGURE 2 - 1.68 GHz RF OSCILLATOR OUTPUT

POWER TEST CIRCUIT

+VCc

-Vce

-I't-

LI. 12 -1/16" Microstrip Botrd. Lintstra 0.16"

widtind 1.31" long.
L3 - 1/16" Microstrip Boird. 0.16" widi and
0.65" long.
L4-RFChckt.3.6(jHy

VEB

CI - 0.4 pF - 6.0 pF Johinson 4640

C2 - 1.0 pF - 10 pF Johnson 43S5
C3.C4-25pFFttdthru

R - 2.0k ohmsMinisters Trimpot

"im

/fc:

MOTOROLA RF DEVICE DATA

2-42

2N5108

FIGURE 3 - OUTPUT POWER versus INPUT POWER

'-I

P 0.9

Vce28 Vdc

1.1

FIGURE 4 - OUTPUT POWER versus FREQUENCY

0.8

1.5

I"
0.6

i= 1.0 GH

2 0.5

I 0.4

0.3
" 0.2

0.1
0

0.2

0.3

0.6

Pin. POWERINPUT (WATTS)

FIGURE 5 -

OUTPUT POWER

0.7
0.!
f, FREQUENCY (GHz)

FIGURE 6 - OSCILLATOR OUTPUT POWER

versus COLLECTOR-EMITTER VOLTAGE

versus COLLECTOR CURRENT

i
_

riri-0 31 W
f = 1.0 GHz

to
cc

s
s

y
rC/

r^1c

I o.

i o

/, /j,

A
5.0
10
15
20
25
VCE.COLLECTOR-EMITTER VOLTAGE (VOLTS)

J>
40

lC, COLLECTOR CURRENT (mAdc)

FIGURE 7 CURRENT-GAIN-BANDWIDTH

FIGURE 8

PRODUCT versus CURRENT

COLLECTOR BASE

CAPACITANCE versus VOLTAGE

VCE

15 V

< 500

100

lC. COLLECTOR CURRENT (mAdc)

Vcb. COLLECTOR-BASE VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-43

120

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N5109

The RF Line
1.2 GHz @ 50 mAdc

HIGH FREQUENCY
TRANSISTOR

NPN SILICON HIGH-FREQUENCY TRANSISTOR

NPN SILICON

... designed specifically for broadband applications requiring good

linearity. Useable as a high frequency current mode switch to
200 mA.

Low Noise Figure - @ f = 200 MHz

NF = 3.0 dB (Typ)

High Current-Gain - Bandwidth Product fT = 1200 MHz (Min) @ \q = 50 mAdc

-GaD

MAXIMUM RATINGS
Rating

Symbol

Value

vCEO
VCBO

Vdc

Collector-Base Voltage

Vdc

Emitter-Base Voltage

Collector-Emitter Voltage

Unit

VebO

3.0

Vdc

Base Current Continuous

400

mAdc

Collector Current Continuous

400

mAdc

Total Device Dissipation Tc =75C(1

2.5

Watt

mW/C

-65 to +200

Derate above 25C

Storage Temperature Range

Tstg

f~1Ej i__L c

STYLE 1.

PIN 1 EMITTER

_4-D!H

2 BASE

3COLLECTOR | j> 036 (0 OUUgjJT^A

(1) Total Device Dissipation at TA - 25C is 1.

Indicates JEDEC Registered Date.

NOTES:

FIGURE 1 - RF AMPLIFIER FOR VOLTAGE

1. DIMENSIONING AND T0LERANCING PERANSI

Y14.SM. 1982.
2. CONTROLLING DIMENSION INCH.
3. DIMENSIONJ MEASUREDFROMDIMENSIONA

GAIN TEST CIRCUIT

MAXIMUM.

4 DIMENSION B SHALLNOTVARY MORETHAN0 75

10010) IN ZONE R. THIS ZONE CONTROLLED FOR
AUTOMATICHANDLING.

IZ|-75m

I2i75 m

5. DIMENSION F APPLIES BETWEEN DIMENSION P

AND L DIMENSION0 APPLIESBETWEEN
DIMENSION IANO K MINIMUM. LEAD DIAMETER
IS UNCONTROLLED IN DIMENSION P ANO
BEYOND DIMENSION K MINIMUM.
DM

851

7 75
610

041

023
041

G
H

VCC

CI.C2.C3.CS
C4
CS.C7
C(
Rl

0002..F
O.OJF
ISCOpf
II pF
4.7 k. 1/4 W

6 JII. 1/2 W

R]
R4

330II. I W
200II.I/4W

4Tinl]0*>t

INCHES
'
MIN 1 MAX

MUMETFJtS
utm
MAX

939
850

0305 | 0335

660

0240 1 0260

0335

053
104

0016
0009

048

0016 1 0019
0.200 BSC

5.08 BSC
072
074

086

0028

0034

114

1270

1905

635

0029
0500
0250

0045

45'BSC
127
254

Bilitir wound on "Indaiu Gcn<l"

0100

TO-205AD

(TO-39)

2-44

0750
_

45 BSC

CASE 79-04

MOTOROLA RF DEVICE DATA

0021
0041

Cwt CFI02 01.01 Wiimtnl

0370

0050
_

2N5109
ELECTRICAL CHARACTERISTICS <TC - 25Cunless otherwise noted)
Characteristic

Symbol

Typ

"OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage

(lC - 5.0 mAdc, lB - 0)

Collector-Emitter Sustaining Voltage (1)

(C 5.0 mAdc, RBE - 10 fl)

Collector Cutoff Current

vCE0(sus)

VCER(sus)

'CEO

(VCE - 15 Vdc, lB 0)
Collector Cutoff Current

(Vce = 35 Vdc, VBE -1.5 V)

Emitter Cutoff Current

'EBO

(VBE = 3.0 Vdc, lC - 0)

Vdc

CEX

(VCE - IS Vdc, VBE =-1.5 V, TC - 150C)

Vdc

uAdc

5.0

mAdc

5.0

mAdc

100

fiAdc

'ON CHARACTERISTICS
DC Current Gain

hFE

(lC - 360 mAdc, VCE = 5.0 Vdc)

(lC 50 mAdc, Vce 15 Vdc)

5.0

120

DYNAMIC CHARACTERISTICS

'Current-Gain - Bandwidth Product

0C - 50 mAdc, VCE = 15 Vdc, f =200MHz)

MHz

1200

'Collector-Base Capacitance

Ccb

(Vca - 15 Vdc, lE - 0, f - 1.0 MHz)

Noise Figure

1.8

3.5

3.0

pF
dB

(lC D10 mAdc, VqE - 15 Vdc, f > 200MHz)

(Figure 2)
FUNCTIONAL TEST

'Common-Emitter Amplifier VoltageGain(Figure 1)

Gyg

i*C mSO mAdc. Vqc " 15 Vdc, f -50 to

216 MHz)

Power Input (Figure 2)

0.1

(IC=50mAdc, Vce* 15 Vdc, R$ 50ohms,

Pout" 1-26 mW, f - 200 MHz)
'IndicatesJEOEC Registered Data.

(1) Pulsed thru a 25 mH Inductor; 50% Duty Cycle

FIGURE 2 - 200 MHz TEST CIRCUIT

CI.C2.C3 1.0-30pF
C4
C5
C6.C7
CJ

MOTOROLA RF DEVICE DATA

2-45

1.0-20pF
10.000pF
1.000 pF
0.01 F

II 4-1/2 turn. No. 22 wkt. 3/18" M).

14 3-1/2 turm. No. 22 win. 3/16" IJ).
L2.L3 0.82 u RFC
R1 2400KMS.2WATTS

2N5109

FIGURE 4 - COLLECTOR-BASE TIME CONSTANT

FIGURE 3 - CURRENT-GAIN - BANDWIDTH PRODUCT

2.5

vce- IS Vdc

VCE' IS Vdc

100

120

140

160

>C. COLLECTOR CURRENT (mAdc)

100

120

140

1Mil
111

3.0
2.0

sCtb
5

'< - - = :: VBE( ) =

0.3

5.0

<
u

7.0

100

200

3.0

5 0.2

ISO

FIGURE 6 - CAPACITANCES versus REVERSE VOLTAGE

FIGURE 5 - SATURATION VOLTAGES

5.0

lC. COLLECTOR CURRENT (mAdc)

300

1.0
0.1

500

"V^CeD

2.0

0.2

0.3

0.5 0.7 1.0

2.0

3.0

5.0 7.0

Vn. REVERSEVOLTAGE(VOLTS)

lC.COLLECTOR CURREN T(mAdc)

MOTOROLA RF DEVICE DATA

2-46

2N5109

FIGURE 8 -

FIGURE 7 40

INPUT ADMITTANCE versus FREQUENCY

INPUT ADMITTANCE

versus COLLECTOR CURRENT

I
vce is vdc

vce-is vdc

lC* 50 mAdc

1-200 MHz
40
Die

30
""

~8i~

****

b
10
^

- Bj_
0

200

300

500

700

1000

I. FREQUENCY (MHz)

FIGURE 9 -

REVERSE TRANSFER ADMITTANCE

100

FIGURE 10 - REVERSE TRANSFER ADMITTANCE versus

versus FREQUENCY

COLLECTOR CURRENT

Vce- 15 Vdc

V( b' I* Vdc

ln- 50 mAdc

lC. COLLECTOR CURRENT(mAdcl

I-20 I MHz

14
-B IS

-bre

Bra 0

-Ire

Hi i

200

300

500

I. FREQUENCY (MHz)

FIGURE 11 -

FORWARD TRANSFER ADMITTANCE

100

FIGURE 12 - FORWARD TRANSFER ADMITTANCE versus

COLLECTOR CURRENT

Vrc-ISVHr

lC. COLLECTORCURRENT (mAdc)

versus FREQUENCY

J? m

lC - 50 ntAdc

l-20( MHz

-1 It

u
<
ce

-bf.

1 100
o

! It

s-ioo

200

300

500

700

I. FREQUENCY (MHz)

lC. COLLECTOR CURRENT (mAdc)

MOTOROLA RF DEVICE DATA

2-47

100

2N5109

FIGURE 13 -

OUTPUT ADMITTANCE versus FREQUENCY

FIGURE 14 -

OUTPUT ADMITTANCE versus COLLECTOR

CURRENT

VCE =

'C = OmAdc

1- 200 MHz

y
10
Soe

0
200

300

500

I. FREQUENCY (MHz)

FIGURE 15 -

INPUT REFLECTION COEFFICIENT versus

20"

10"

350"

100

FIGURE 16 - OUTPUT REFLECTION COEFFICIENT versus

FREQUENCY

30"

lC.COLLECTOR CURRENT (mAdc)

FREQUENCY

3400

3300

_.,,,,,_,___.

350

,..-_,

340_ - , , , 330
,^,-,-,7

VQE=15Vdc

500 n

SSgg

:,', lC =35 mAdc gKSJ

m zG =zL5on.;x^

3310

300

7 ' -*^J>

290

70 r/

280

mm 230

100MHzV

' \V^300MH7 .V-'280

BVtHjfUU

270

260

100

250

I10

240

120

270
260

im
240
;230

... \
150

160

170

180

190

200

150

210

160

MOTOROLA RF DEVICE DATA

2-48

170

180

190

200

-2200
210

2N5109

FIGURE 17 -

FIGURE 18 -

REVERSE TRANSMISSION

FORWARD TRANSMISSION COEFFICIENT

versus FREQUENCY

COEFFICIENT versus FREQUENCY

350

340

330

30"

211"

10"

lC -35mAdc &

330

.vfcS

lC -35 mAdc SjS

'310o

i?5 "*i

ZG-^L

.NvfaJ300

150
FIGURE 19 -

3-10

-vcfi5Ve

V'CE 15Vdc'

3'jO"

160

170*" 180 T90'

INPUT REFLECTION COEFFICIENT AND OUTPUT REFLECTION

COEFFICIENT versus FREQUENCY

MOTOROLA RF DEVICE DATA

2-49

200

210

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N5160

The RF Line
lc = -400 mA
POWER TRANSISTOR

PNP SILICON RF POWER TRANSISTOR

PNP SILICON

... designed for amplifier, frequency multiplier or oscillator applica

tions in military and industrialequipment. Suitable for use as Class A,
B, or C output driver, or pre-driver stagesin VHF and UHF.

High Power Gain GpE = 8.0 dB (Min) @ f = 400 MHz,

14.5 db (Typ) @ 175 MHz No Emitter Tuning

Power Output Pout = 1- Watt <Min @ f = 400 MHz

= 1.5 Watt (Typ) @ f = 175 MHz
Resists Burnout When Load is Shorted or Opened

-CaD

Designed for Use in Complementary Circuitswith 2N3866

MIL-S-19500 Processed Versions Available as MRF5160HX,
MRF5160HXV

MAXIMUM RATINGS

Rating
Collector-Emitter Voltsge

Symbol

Value

Unit

VceO

-40

Vdc

Collector-Base Voltage

VCB

-60

Vdc

Emitter-Base Voltage

VEB

-4.0

Vdc

Collector Current

-0.4

Adc

Total Device Dissipation (a Tc = 25C

5.0

Watts

28.6

mwrc

TJ. TStg

-65 to +200

Derate above 25C

Operating and Storage Junction

NOTES
1 DIMENSIONINGANO T01ERANCING PER ANSI
Y14 5M.1982
2 CONTROLLING DIMENSION INCH
3 DIMENSIONJ MEASUREDfROM DIMENSIONA
MAXIMUM

4 DIMENSIONB SHALLNOT VARY MORETHAN025

100101 IN ZONE R THIS ZONE CONTROLLEDFOR
AUTOMATIC HANDLING
5 DIMENSIONf APPLIESBETWEENDIMENSIONP
AND L DIMENSION D APPLIES BETWEEN
DIMENSIONL AND K MINIMUM LEADDIAMETER
IS UNCONTROLLED IN OlMENStONP ANO
BEYONDDIMENSION K MINIMUM

Temperature Range

MttUMITERS
(KM

'Indicates JEDEC Registered Data.

INCHES

MIN | MAX

MM J MAX

851 I
B 1 775

939
850

0335

610
041

660
053

0240 | 0260

023

104

D
E
f

< 041 I 048

5 08 BSC

0016 1 0021

0009 ] 0041
0016 I 0019
0200 BSC

072 I

086

0029

0034

074

114

0029

0045

1270 I 1905
635 1 -

0500

0750

L
M
P

0250

127

254

1 0050
0100 1 -

TO-205AD

(TO-39)

2-50

45'BSC

45 BSC

CASE 79-04

MOTOROLA RF DEVICE DATA

I 0370

0305 j 0335 '

2N5160
'ELECTRICAL CHARACTERISTICS (TA = 25C unlessotherwise noted)
Characteristic

Symbol

Min

VCEO(sus)

-40

Vdc

V(BR)EBO(sus)

-4.0

Vdc

Typ

Max

Unit

OFF CHARACTERISTICS

Cotlector-Emitter Sustaining Voltage

dC = -5.0 mAdc, Ib = 0)
Emitter-Base Breakdown Voltage
(IE = -0.1 mAdc, lc = 0)
Collector Cutoff Current

>CEO

(VCE = -28 Vdc, Ib = 0)

Collector Cutoff Current

>CES

(VCE = -60Vdc,VBE = 0)
Collector Cutoff Current

>CBO

IVcb= -28Vdc,lE = 0)

-20

^Adc

-0.1

mAdc

-1.0

MAdc

ON CHARACTERISTICS
DC Current Gain

hFE

(|C = -50 mAdc, Vqe -5.0 Vdc)

DYNAMIC CHARACTERISTICS

Current-Gain Bandwidth Product

500

900

MHz

C -50 mAdc, Vqe -15 Vdc, f = 200 MHz)

Collector-Base Capacitance

Ccb

(VCB = -28 Vdc, Ie = 0, f 0.1 to 1.0 MHz)

2.5

4.0

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

(Vqe = -28 Vdc, Pjn = 0.16 Watt, f = 400 MHz)
(VCE -28 Vdc, Pin = 50 mW. f = 175 MHz)

Gpe

dB
8.0

8.8
14.5

Power Output

Watt

(Vce = -28 Vdc, Pjn = 0.16 Watt, f = 400 MHz)

(Vce = -28 Vdc, Pjn = 50 mW, f = 175 MHz)

1.0

1.2

1.4

Collector Efficiency

(VCE = -28 Vdc, Pjn = 0.16 Watt, f = 400 MHz)

'Indicates JEDEC Registered Data.

FIGURE 1 - 400-MHz TEST CIRCUIT

Cj-IOpF
C* C3, C4, C5 - 1.0- 10pFvariable
C5- 2400pF feed through
C7-0.004 MF

x*irr

C8 - 0.01 mF
L,-30nH, 1 turn, No. 20 AWG
L2-75nH,3turns,No.20AWG
L3- 0.33MH, R.F.C.

MOTOROLA RF DEVICE DATA

2-51

2N5160

RGURE 3 POWER OUTPUT

versus POWER INPUT

RGURE 2 POWER OUTPUT

versus FREQUENCY

VCF =

-78V

NJ
N

s
_Pjn = 75 m w.

\ *,.

I, VCE =

.100s

<mW>^mW*"

-28V/mv^

f -

175 Mu'

-13.5 V

\
2

0.5

150

100

200

300

250

400

Pjn, POWER INPUT (mW)

I, FREQUENCY (MHz)

RGURE 5 PARALLEL INPUT

IMPEDANCE versus FREQUENCY

RGURE 4 PARALLEL INPUT

IMPEDANCE versus FREQUENCY

+ J40

100

vce = ~
70

VCE= " 28 V

|+j35

50
p

= LOW

K0 it =io

a +j3o
I

075*

'5W

+|25

3 30

s
>-

3 20

+ J15
100

200

100

400

300

RGURE 7 CURRENT-GAIN BANDWIDTH

PRODUCT versus COLLECTOR CURRENT

RGURE 6 PARALLEL OUTPUT

CAPACITANCE versus FREQUENCY

vce

VCE= -10 V

28V-

8
S

200

f. FREQUENCY |MHz>

f. FREQUENCY (MHj)

0.8

0.6

-- "out -

'-u "

07 fW

I 0.4

Jr
100

150

200

250

300

0
-50

400

-100

-150

I&COLLECTOR CURRENT ImA)

I. FREQUENCY MHz)

MOTOROLA RF DEVICE DATA

2-52

-200

2N5160

FIGURE 8 - 2NS160 300-MHz COMPLEMENTARY POWER OUTPUT CIRCUIT

500pF _j}M
-0+56V

f* 470 pF
RFC

L-i'

Q<5.0

-Jr COUPLING

5.0 pF

-aI

CAP

RG-50O

qx 0.001 *F

RL-50Q

ISOrtH

1 Q
1.0-l0pF

1.0-t0pF

^-Kj 2N386S

^*.0-t0pF

?^1.0-10pF

RFC

. Q * 5.0

FIGURE 9 - COMPLEMENTARY CIRCUIT - POWER OUTPUT versus POWER INPUT

3.0
1

S
i3
3

O
ce

1.0

1( 3

IS J

20 0

Pin, POWER INPUT (mW)

MOTOROLA RF DEVICE DATA

2-53

2! 0

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N5179

The RF Line
4.5 dB @ 200 MHz

HIGH FREQUENCY
TRANSISTOR
NPN SILICON

NPN SILICON RF HIGH FREQUENCY TRANSISTOR

... designed primarily for use in high-gain, low-noise amplifier, oscil

lator, and mixer applications. Can also be used in UHF converter
applications.

HighCurrent-Gain- Bandwidth Product f-r = 1.4 GHz (Typ) @ Iq = 10 mAdc

Low Collector-Base Time Constant -

rb'cc =14ps (Max)@lg = 2.0 mAdc

Characterized with Scattering Parameters

Low Noise Figure NF = 4.5dB (Max)@f

200 MHz

rB~i.

li
-JU-o

'MAXIMUM RATINGS
Rating

Collector-Emitter Voltage

Symbol

Value

Unit

VCEO

Vdc

STYLE 10:
PINV EWITTER
2 BASE
3 COLLECTOR
4. CASE

V^J

Applicable 1.0 to 20 mAdc

Collector-8s Voltage

VCB

Vdc

Emitter-Base Voltege

VEB

2.5

Vdc

mAdc

Collector Current

Total Device Dissipation @T/\ " 25C

Oerate above 25C

Total Device Dissipation @Jq - 25C

Derate above 25C

Storage Temperature Range

Tstg

NOTE: ALLRULES ANONOTES ASSOCIATED WITH TO72

OUTLINE SHALLAPPLY
NCI IES

MILLIMETERS

200

1.14

mW/C

300

1.71

mW/C

-65 to +200

MAX

131

452

0209
0179

03X

C
0

432
041

584
495
533
053
076

0170

0210

001S

0XI2I

048

0016

E
F

041

2 54 BSC

G
H
J
K
I
M

'indicates JEDEC Regittared Data.

N
P

0.91
0.71

12.70
635

117

122

0250

1 127

(TO-72)

2-54

45* BSC
0050 BSC

CASE 20-03
TO-206AF

MOTOROLA RF DEVICE DATA

0030
0019

0 ICOBSC
0046
0036
0048
0028
0500

45 BSC
1.27 BSC

0195

1 0050

2N5179

'ELECTRICAL CHARACTERISTICS (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage

vCEO(sus)

Vdc

0C = 3.0 mAdc. IB = 0)

Collector-BaseBreakdown Voltage
C " 0.001 mAdc, lg 0)

V(BR)CB0

Emitter-BaseBreakdown Voltage
(IE - 0.01 mAdc, lc - 0)

v(BR)EBO

Vdc

20
Vdc
2.S

Collector Cutoff Current

'CBO

(VCB 15 Vdc, l - 0)
(VCB* IS Vdc. l - 0, TA - 150C)

uAdc
0.02
1.0

ON CHARACTERISTICS
DC Current Gain

"FE

(lC * 3.0 mAdc, Vce " 1 Vdc)

Collector-Emitter Saturation Voltage

dC" 10 mAdc, lB= 1.0 mAdc)

vCE(sat)

Base-Emitter Saturation Voltage

dC 10 mAdc, Ib - 1.0 mAdc)

vBE(sat)

Vdc

Vdc
1.0

DYNAMIC CHARACTERISTICS

Current-Gain - Bandwidth Product (T)

C = 5.0 mAdc, VCE 6.0 Vdc, f = 100 MHz)

MHz

300

Collector-Base Capacitance

2000

ccb

(VCB " 10 Vdc, l - 0, f = 0.1 to 1.0 MHz)

pF
_

Small-Signal Current Gain

1.0

hfe

C "2.0 mAdc, Vce "6.0 Vdc, f- 1.0 kHz)

Collector-Base Time Constant

300

3.0

'b'Cc

(IE " 2.0mAdc, VCb- 6.0 Vdc, f 31.9 MHz)

Noise Figure (See Figure t)

(lC* IS mAdc, Vce " 6.0 Vdc,R$ - 50 ohms, f = 200 MHz)

dB
_

4.5

FUNCTIONAL TEST

Common-Emitter AmplifierPowerGain (SeeFigure1)

(VCE" 6.0 Vdc, Ic 5.0 mAdc, f - 200 MHz)

Power Output (See Figure 2)

(VCB - 10 Vdc.IE 12 mAdc, fS500 MHz)

'Indicates JEDEC Roflijtorod Values.

Q)f-r Is definod as tho froquancy atwhich |hf0| extrapolates tounity.

MOTOROLA RF DEVICE DATA

2-55

2N5179

FIGURE 2 - BOO MHz OSCILLATOR CIRCUIT

FIGURE 1 - 200 MHz AMPLIFIER POWER GAIN

AND NOISE FIGURE CIRCUIT

IMWSJ i

FRSMUn -

1*1

JSHIEIO

)\
w-

I jr Q

JT. ! IEXTERNAL

source oaj^ <

>-&

. Tit a

FVs,0l

0.1.F
0MIF

Noll 1 - Couul Lint output networkcontesting ol:

2Gtfltnl RtdioTypt874TEEornsuintait
I Gttwtl RtdioTypt 874-020AdjusttbftStaborteuintiflt
I Gtfltnl RtdioTyp*874-lA Adjusts!* Lin orcquiaftM
I Gtnml RtdioTypt 874WN3Short-circuit ttrnuutioa ortsMtn1
Not*2 - RFC 0.2 |iH Otimh*2-4S0or tquivtftflt
Not! 3 - Utd Numan 4 last) (lotting

1LI 1-3/4 Turns. I8 AWG.OS" L. 0.5" Oitmtttf

L2 2 Turns. 16 AWG,0.5" 1.0.5" Oitmtln

13 2 Turns. 13AWG. 0.25"L.0.5"Oitmtttf (Position 1" hornL2I

LI - 2 turns 1S AWGwin. 3/8 inch 00.1-1/4 inch long

Q-2N5I79

FIGURE 3 - NOISE FIGURE

FIGURE 4 - NOISE FIGURE versus SOURCE

versus FREQUENCY

RESISTANCE and COLLECTOR CURRENT

1 1 11

VCE-6.0 Vdc
lC 1.0 mAdc

^ 100 Ohms O460 MHz

J
S'
S

100

1.0

200

2.0

3.0

lC. COLLECTOR CURRENT(mAdc)

I. FREQUENCY (MHi)

FIGURE 5 - NOISE FIGURE versus SOURCE

RESISTANCE and COLLECTOR CURRENT

0.7

1.0

2.0

3.0

5.0

lC.COLLECTOR CURRENT (mAdc)

MOTOROLA RF DEVICE DATA

2-56

7.0

5.0

2N5179

FIGURE 6 - CURRENT-GAIN-BANDWIDTH PRODUCT

If)
Ifi
14

17
in
(IR

as
04

4.0

5.0

6.0

7.0

8.0

9.0

lC. COLLECTOR CURRENT (mAdc)

FIGURE 7 - INPUT ADMITTANCE

FIGURE 8 - OUTPUT ADMITTANCE

versus FREQUENCY

vce'6.0 vdc
lC -1.5 mAdc

vce -6.o /dc

lC -1.5 mAdc
jbc rj

Sit

So*

200

300

400

500

600

200

I, FREQUENCY(MHi)

300

400

500

600

I. FREQUENCY (MHz)

FIGURE 9 - FORWARD TRANSFER

ADMITTANCE versus FREQUENCY

FIGURE 10 - REVERSE TRANSFER

ADMITTANCE versus FREQUENCY

1
vce-6.0 vdc
lC -1.5 mAdc

VcE-6.0Vde
lC -1.5 nAdc
9f>

'
-i

-Jbf,

y
s.

/
'>
s

JX
V

\
i t

300

400

500

600

200

I. FREQUENCY (MHz)

300

400

(.FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-57

2N5179
FIGURE 11- $11, INPUT REFLECTION COEFFICIENT
30

350

340

FIGURE 12-S22. OUTPUT REFLECTION COEFFICIENT

330

FIGURE 13-S-I2. REVERSE TRANSMISSION COEFFICIENT

350

340

160

WO"

180

190

700

350

170

180

190

340

330

200

FIGURE 14-S21. FORWARD TRANSMISSION COEFFICIENT

330

350

340

330

mmmmmmmiiimmm3320

150

210

IE0

MOTOROLA RF DEVICE DATA

2-58

170

180

190

200

210

2N5179

FIGURE 15-Sii. INPUT REFLECTION COEFFICIENTAND S22. OUTPUT REFLECTION COEFFICIENT

MOTOROLA RF DEVICE DATA

2-59

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2NS583

The RF Line
\q = -500 mA
HIGH FREQUENCY
TRANSISTOR
PNP SILICON HIGH FREQUENCY TRANSISTOR
PNP SILICON

... designed for applications in high frequency amplifiers and

non-saturated switching circuits. High gain-bandwidth product
characteristic provides excellent performance in a variety of small
signal and linear amplifier applications.

High Current-Gain Bandwidth Product

fr = 1300 (Min) <a lc = -100 mAdc

Low Collector-Base Time Constant

rD'Cc = 8.0 ps (Typ) (ft \q = -50 mAdc

MIL-S-19500 Processed Versions Available as MRF5583HX,
MRF5583HXV

rr-ra

STYUI

PIN 1 EMITTER

||.. P

2 BASE

3COLLECTOR l+l*0>0) IT| A[ H

NOTES:

MAXIMUM RATINGS

Rating
Collector-Emitter Voltage

Symbol

Value

Unit

VCEO

-30

Vdc

'Collector-Base Voltage

VCB

-30

Vdc

'Emitter-Base Voltage

VEB

-3.0

Vdc

'Collector Current Continuous

-500

mAdc

Total Device Dissipation ( T/\ = 25C

Derate above 25C

'Total Device Dissipation (a Jq = 25C

Derate above 25C

'Operating and Storage Junction

Temperature Range

Tj. Tstg

1. DIMENSIONING ANDT0LERANCING PERANSI

Y145M. 1S32.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION J MEASURED FROMDIMENSION A
MAXIMUM.
4 DIMENSION B SHALL NOT VARY MORETHAN 025

(0 0101IN ZONER. THISZONECONTROLLED FOR

AUTOMATICHANDLING.

5. DIMENSION F APPLIES BETWEEN DIMENSION P

AND L DIMENSION0 APPLIESBETWEEN
DIMENSION L AND K MINIMUM. LEADDIAMETER
IS UNCONTROLLED IN DIMENSION P ANO

1.0

Watt

5.71

mW/C

5.0

Watts

DOM

28.6

mW/*C

-65 to +200

'Indicates JEDEC Registered Data.

8EY0ND DIMENSION K MINIMUM.

INCHES

MHUMETERS

MIN I MAX

851

0.335

939

7.75 | 850

0305 I 0335

810
041

650

0240

0260

053

0.016

023
0.41

104
048

0.009

0021
0041

5.08 BSC
066

0.72

074

114

12.70

1905

6.35

M
P
R

0016 1 0019
0200 BSC
0034

0028
0029
0.500
0.250

45 BSC
127

254

0045
0750
_

45* BSC
_

0.100

CASE 79-04
TO-205AD

(TO-39)

2-60

0370 I

C
0
E
F

MOTOROLA RF DEVICE DATA

MIN 1 MAX

0050
-

2N5583

'ELECTRICAL CHARACTERISTICS Ha = 25Cunless otherwise noted.)

Rgure No.

Characteristic

Symbol

Mln

V(BR)CEO

-30

Vdc

V(BR)CBO

-30

Vdc

V(BR)EBO

-3.0

Vdc

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (1)

C = -10 mAdc, Ib = 0)

Collector-Base Breakdown Voltage

dC = -10/zAdc, Ie = 0)
Emitter-Base Breakdown Voltage

E = -100 MAdc, lc = 0)
Collector Cutoff Current

ICBO

-50

nAdc

-0.5

/iAdc

(Vcb = -20Vdc,le = 0)
Emitter Cutoff Current

>EBO

<VEB= -2.0 Vdc, lC = 0)

ON CHARACTERISTICS

, DC Current Gain (Note 1)

C = -40 mAdc, Vce = -2.0 Vdc)

dC = -100 mAdc, Vce = -2.0 Vdc)
C = -300 mAdc, Vce = -5.0 Vdc)
Collector-Emitter Saturation Voltage (Note 1)
dC = -100 mAdc, Ib = -10 mAdc)
Base-Emitter On Voltage (Note 1)

"FE

2,3

VCE(sat)

VBE(on)

C = -100 mAdc, VCe = -2.0 Vdc)

100

-0.6

-0.8

Vdc

-0.84

-1.8

Vdc

SMALL-SIGNAL CHARACTERISTICS

1 'Current-Gain BandwidthProduct

! dc = -40 mAdc. Vce = -10 Vdc, f = 100 MHz)

(lc = -100 mAdc, Vce = -10 Vdc, f = 100 MHz)

I 'Collector-Base Capacitance

CCb

Ceb

'b'Cc

(Vcb = -15 Vdc, e = 0. f = 1.0 MHz)

'Emitter-Base Capacitance

<VEB = -0.6 Vdc, IC = 0, f = 100 kHz)

Collector-Base Time Constant

MHz
1000

1300

1500

2.5

5.0

8.0

(lC = -50 mAdc, Vcb = -10 Vdc, f = 63.6 MHz)

SWITCHING CHARACTERISTICS

Delay Time
Rise Time

(Vce = - 31.4 Vdc, lc = -150 mAdc,

RC = 160 Ohms, Re = 26.6 Ohms)

Fall Time

9,10

'Indicates JEDEC Registered Data.

Note 1. Pulse Test: Pulse Width <s300 /is. Duty Cycle

MOTOROLA RF DEVICE DATA

2-61

1.0
2.1
1.8

2N5583

RGURE 2 COLLECTOR SATURATION REGION

RGURE 1 DC CURRENT GAIN

100

;Ta= 175C<& Vc= -2.0 Vdc

1 1 1 1 11

!C= "

.... II 1 1 1 U4-

10 mA

-100 mA

-200 mA

r*>

-55C<& VCe= -2.0 Vdc

& -1.6

TA = 25C

-OS

A
V

\
Fi -0.4

\
-3.0

-5.0-7.0-10

-20 -30

-50-70-100

-0.2

-200-300

-0.5

-1.0

-2.0

RGURE 3 "ON" VOLTAGES

-0.2

-0.5-1.0-2.0

-5.0-10-20

0.7-0.6-0.5-0.4-0.3-0.2-0.1 0
ReverseBias

-50-100-200

'.[' ceb

-50 -100 -200

0.1 0.2 0.3 0.4 0.5 0.6 0.7

ForwardBias

RGURE 6 TEMPERATURE COEFFICIENTS

-2.0

-20

VfiE. BASE-EMITTER VOLTAGE (VOLTS!

RGURE 5 CAPACITANCES

:::

-10

RGURE 4 COLLECTOR CURRENT versus BASE VOLTAGE

Irj, COLLECTOR CURRENT (mA)

-5.0

lB, BASE CURRENT (mA)

lC. COLLECTOR CURRENT (mA)

"1~-

-1.5

/
c?

|-0.5

1 0

i 7'

5 5.0

Ta = 100 to175C
eVcforVcEisatl

.. f*b

3.0

+0.5

8+1.0

= -55to100C

+ 1.5

2.0

+ 2.0

0VBfor VBE
TA == -55 to 175C

+ 2.5

1.0

-0.2-03-0.5

-1.0

-2.0-3.0-5.0

-10

-20-30-40

1 1
-5.0

I II

-10

-30 -50

lC. COLLECTOR CURRENT (mA)

REVERSE VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-62

-100

-300

2N5583

RGURE 7 CURRENT-GAIN BANDWIDTH PRODUCT

3000

1 III

FIGURE 8 COLLECTOR-BASE TIME CONSTANT

f == 100 MHz

= 25C

f = 63.6 MHz

2000

Vce= -10 Vdc

1
q

"i s

1000
.

700

v
A

<* y

VCB= -5.0 Vdc

500

VCB

= -10 Vdc

3 300
-5.0 -7.0-10

-20

-30

-50 -70-100

-200 -300

-10

-20

t, COLLECTOR CURRENT (mA)

-40

-50

-60

-70

-80

-90 -100

lC.COLLECTOR CURRENT (mAI

RGURE 9 SWITCHING TIMES

-30

FIGURE 10 SWITCHING TIMES TEST CIRCUIT

vccs

-30V

V" VCC = -31<

Vrlr

Vout_rL
p~^ Scope 2

~i_r

tffrr Vce = -31.4Vd

PW = 100 ns

Duly Cycle = 2.0%

= 50 Ohms

Vj = -5.0 Vdc

I"
it
Z_
10

-20 -30

-50

-100

-200-300 -500

-1000

lOCOLLECTOR CURRENT (mAI

MOTOROLA RF DEVICE DATA

2-63

vec

Ohms

Volts

-50

526

-34.4

-150

160

26.6

-31.4

-300

13.3

-30.6

-500

46.5

8.0

-30.3

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N5641

The RF Line
7.0 W-175 MHz

RF POWER
TRANSISTOR
NPN SILICON

NPN SILICON RF POWER TRANSISTOR

... designed primarily for wideband large-signal amplifier stages in

the 125-175 MHz frequency range.

Specified 28 Volt, 175 MHz Characteristics Output Power = 7.0 Watts

Minimum Gain = 8.4 dB

Efficiency = 60%

Characterized from 125 to 175 MHz

Includes Series Equivalent Impedances

STYLE 1:
FIN1. EMITTER
2. BASE
3. EMITTER
4 COLLECTOR

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Vceo

Vdc

NOTES:

1. DIMENSIONING ANDT0U1RANCING PERANSI

Collector-Emitter Voltage
Collector-Base Voltage

VCB

Vdc

Emitter-Bate Voltage

VEB

4.0

Vdc

1.0

Adc

Collector Current Continuous

Total Device Dissipation @Tc =25C

Derate above 25C

Operating and Storage Junction

Tj.Tstg

Y145M. 1932.

2. CONTROLLING DIMENSION: INCH.

MUWETERS

DIM

KIN

9*0
8.13
17.02
0.S4

Watts

mW/C

-65 to +200

Temperature Range

'Indicates JEDEC Registered Data.

D
E
F
J
K
M
N

MAX
178

038
20.07
0.83

1.78
5

557

0.08

0.18

12.45
45'NOM
Ml
152
_

1.27

INCHES
MAX
KN
0J35

0370
0.320

0.050
_

2-64

0.060
0050

7.59

120

0299

0337

4.01

0.153

2.11

4.52
2.54
135
20*

0.083

0.178
0.100

OJ098

0132

10"

2.49

10*

CASE 1448-05

MOTOROLA RF DEVICE DATA

0330

0.790
0.870
0.035
0.025
0070
0235
0215
0.007
0.003
0.490
45*N0M

2N5641

'ELECTRICAL CHARACTERISTICS (Tc = 25C unlessotherwise noted.)

Charcctsristic

Symbol

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (Note 1)

V(BR|CEO

V(BR)CES

V(BR)EBO

4.0

Vdc

C =200mAdc, lB-0)
Collector-Emitter Breakdown Voltage

f'C = 200 mAdc, VBe - 0)

Emitter-Base Breakdown Voltage

(l= 5.0 mAdc, lc " 0)

Collector Cutoff Current

'CBO

(VCB -30 Vdc, lE-0)

1.0

mAdc

ON CHARACTERISTICS

IDC Current Gain

hFE

5.0

(lc = 100 mAdc,Vce 5.0 Vdc)

DYNAMIC CHARACTERISTICS

lOutput Capacitance

C0b

| (VCB=30Vdc,lE-0,f =0.1 to 1.0 MHz)

8.5

FUNCTIONAL TEST

Common-Emitter Amplifier Power Gain (Figure 1)

GPE

8.4

12.5

(Pout " 7 Watts, VCe " 28 Vdc, f = 175 MHz)

Collector Efficiency (Figure 1)

(Pout = 7 Watts, VCE = 28 Vdc, f = 175 MHz)

Note 1: Pulsed through 26 mH inductor.
'Indicates JEDEC Registered Data.

FIGURE 1 - 175 MHz TEST CIRCUIT SCHEMATIC

*
HF Input >

LI
jytyv

RFC
Q <S.O

C1.C3, C4

5.0 to 80 pF

9.0 - 180 pF

0.1 nF

1-1/4 Straight #14 AWG

L2
L3

3 Turns #16 AWG. 14" I.D.

0.22 MH

MOTOROLA RF DEVICE DATA

2-65

Jff /~\ <RF Output

2N5641

FIGURE 2 - OUTPUT POWER versui FREQUENCY

FIGURE 3 - OUTPUT POWER versui FREQUENCY

9.0
8.0

6.0

Pin'0.8 Watt
0.6 Watt

1,0

3.0

S^UWatt
0.4Watt\
3.0

,,0.1Watt

0.2Wtt%.

\Ti

0.6 Watt

\0.2Watt

N^O.1 Watt
Vcc= 13.6Vdc

Vce* 28 Vdc
ISO

ISO

200

I. FREQUENCY (MHr)

200

300

1. FREQUENCY (MHj)

FIGURE 4 - SERIES EQUIVALENT IMPEDANCE

Zql* - Conjugate ofthe optimum load impedance into which the device output operates atagiven output power, voltage and frequency.

MOTOROLA RF DEVICE DATA

2-66

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N5642

The RF Line
20 W-175 MHz

RF POWER
TRANSISTOR
NPN SILICON

NPN SILICON RF POWER TRANSISTOR

... designed primarily for wideband large-signal amplifier stages in

the 125-175 MHz frequency range.

Specified 28 Volt, 175 MHz Characteristics Output Power = 20 Watts

Minimum Gain = 8.2 dB

Efficiency = 60%

Characterized from 125 to 175 MHz

Includes Series Equivalent Impedances

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

vCEO

Vdc

Collector-Base Voltage

VCB

Vdc

Emitter-Base Voltage

Collector-Emitter Voltage

VEB

4.0

Vdc

Collector Current - Continuous

3.0

Adc

Total Device Dissipation <5> Tc = 25C

Derate above 25C

Operating and Storage Junction

Temperature Range

TJ.Tstg

NOTES:
1. DIMENSIONING ANO T0LERANCINGPERANSI

Y14.5M. 1S82.
2. CONTROLLING DIMENSION: INCH.

DIM

Watts

171

mW/C

-65 to +200

B
C
D

6*6

5.S7

1.78
009

0.18

J
K
L

'Indicates JED EC Registered Data.

M0UMETERS
MIN
MAX
9.40
9.78
8.13
&38
17.02
20.07

1245
140

M
P

1.78

INCHES
MW
MAX
0385
0320
0330
0.670
0.790
0.370

0215
0.070

0.003
0490
0055

45' NOM

1.27

2-67

0.007

0070

45* NOM

7.59

7.80

0.299

0.050
0307

4.01

4.52

0.100
0.132

211

2.54

0.158
0033

249

3.35

0098

CASE 145A-09

MOTOROLA RF DEVICE DATA

0.235

0.178

2N5642

ELECTRICAL CHARACTERISTICS (Tc - 25Cunless otherwise noted.)

Characteristic

| Symbol |

Min

v(BR)CEO

V(BH)CES

v(BR)EB0

4.0

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (Note 1)

Vdc

(lC2 200 mAdc, l8 = 0)

Collector-Emitter Breakdown Voltage

Vdc

llc = 200 mAdc. VBE = 0)

Emitter-Base Breakdown Voltage

(lE" lOmAdc, lC-0)

Collector Cutolf Current

'CBO

1.0

mAdc

(VCB 30Vdc.lE*0)
ON CHARACTERISTICS
DC Current Gain

5.0

"FE

(lC = 200 mAdc, Vce " 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

cob

(VCB = 30Vdc. IE = 0.1 = 0.1 to 1.0 MHz)

FUNCTIONAL TEST

Common-Emitter Amplifier Power Gain (Figure 1)

Gpe

8.2

10.2

(Pout = 20 Watts, VCE - 28 Vdc. f = 175 MHz)

Collector Efficiency (Figure 11

(Pout " 20 Watts, VCE = 28 Vdc, f = 175 MHzl

Note 1: Pulsed through 25 mH inductor
'Indicates JEDEC Registered Data.

FIGURE 1 -

175 MHz TEST CIRCUIT SCHEMATIC

-TY-VO

*F input > Q

'"YW
RFC
5.0

3.0 30 pF

C2.C3.C4 9.0-180 pF
CS

0.1 uF

1" Straight #14 AWG

1 Turn #16 AWG. 1/4" I.D.

0.22 UH

MOTOROLA RF DEVICE DATA

2-68

Uf f~\

<RF Output

2N5642

FIGURE 2 - OUTPUT POWER versus FREQUENCY

FIGURE 3 - OUTPUT POWER versus FREQUENCY

5.0 Wj

iiS

3
a.

I.OWatT

9.0

3
O

8.0

Pin-

0.25

WtttX

7.0

\ \ ! . S Warn

2.fNX

l.sN Watts\\
Wall

Pin-I.OWatiN.

4.0

>
\

6.0

vce 28

0.5Wat t \

7.0

Vce = 13.6 Vdc

Jdc

3.0

100

150

200

, FREQUENCY(MHil

I. FREQUENCY(MHz)

FIGURE 4 - SERIES EQUIVALENT IMPEDANCE

MOTOROLA RF DEVICE DATA

2-69

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

The RF Line
40 W-175 MHz

RF POWER
TRANSISTOR
NPN SILICON

NPN SILICON RF POWER TRANSISTOR

... designed primarily for wideband large-signal amplifier stages in

the 125-175 MHz frequency range.

Specified 28 Volt, 175 MHz Characteristics Output Power = 40 Watts

Minimum Gain = 7.6 dB

Efficiency = 60%
Characterized from 125 to 175 MHz

Includes Series Equivalent Impedances

STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage

Symbol

Value

Unit

VcEO

Vdc

Collector-Base Voltage

VCB

Vdc

Emitter-Base Voltage

VEB

4.0

Vdc

5.0

Adc

Collector Current Continuous

Total Device Dissipation @Tc " 25C

Derate above 2SC

Operating and Storage Junction
Temperature Range

Tj.Tjtg

Watts

342

mW/C

-65 to -1-200

NOTES
1. DIMENSIONING ANO T0LERANCINGPERANSI
YI4SM. 1982.
2. CONTROLLING DIMENSION:INCH

INCHES

MIN

9.40

978

0.370

MAX
0.385

8.13

0.320

0330

C
D
E

17.02
546

838
2007

0.670
0.215

0793

J
K

'Indicates JEDEC Registered Data.

MILLIMETERS
MAX

DOM

M
P
R

S
T
U

1.78
0.03
12.45

537

ots

1.40
178
45"N0M

7.59
401
2.11
249

IBM

0.070
0.003
0.490

2-70

0007

0055

0070
45*NOM

1.27
780

0.299

0307

452

0.158

254

0.033

0178
0100

335

0.038

0132

CASE 145A-09

MOTOROLA RF DEVICE DATA

0235

0050

2N5643

'ELECTRICAL CHARACTERISTICS (Tc - 25C unless otherwise noted.)

Characteristic

| Symbol |

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (Note 1)

V|BR)CE0

V(BR)CES

V(BR)EB0

4.0

Vdc

(IC= 200mAdc, lB= 0)

Collector-Emitter Breakdown Voltage

(lC 200 mAdc, VB = 0)

Emitter-Base Breakdown Voltage

(lE = 10mAdc, lc0)

Collector Cutoff Current

'CBO

(VCB= 30 Vdc, lE = 0)

1.0

mAdc

ON CHARACTERISTICS
DC Current Gain

5.0

"FE

(lC " 500 mAdc. Vce " 5.0 Vdc)

DYNAMIC CHARACTERISTICS

IOutput Capacitance

cob

(VCB 30 v"c. l 0, f = 0.1 to 1.0 MHz)

FUNCTIONAL TEST

Common-Emitter Amplifier Power Gain (Figure 1)

<pout " 40 Watts, VCE = 28 Vdc, f = 175 MHz)

GPE

Collector Efficiency (Figure 1)

7.6

8.1

<pout =40 Watts. VC = 28 Vdc. f = 175 MHz)

Note 1: Pulsed through 25 mH inductor
'Indicates JEDEC Registered Data.

FIGURE 1 - 175 MHz TEST CIRCUIT SCHEMATIC

^C5

-O

O-

"J? Q <HFO"
> Q

W
RFC
Q < 5.0

C1.C2.C3, C4

ARCO 464 25-280 pF

0.1 (IF

LI
L2
L3

1" Straight #14 AWG

1 Turn #16 AWG, 1/4" I.D.
0.22 fiH

MOTOROLA RF DEVICE DATA

2-71

2N5643

FIGURE 2 - OUTPUT POWER versus FREQUENCY

FIGURE 3 - OUTPUT POWER versus FREQUENCY

V \
30

. 7.0 Witts

\4.0Wittl>

Pjn-5.0Wit.tt

N2.0WittV

3
O
OC

"N.

7.0

Pin*0.5WaHX

.0WittsN

XOWitttV.

2.0Wttts\

S.0

VCC-28 Vdc

Vce-13.6 Vdc
100

ISO

200

150

200

f, FREQUENCY (MHt)

f. FREQUENCY (MHz)

FIGURE 4 - SERIES EQUIVALENT IMPEDANCE

Zql* =Cotfup^dth optimum tolditr^iecJtna^

MOTOROLA RF DEVICE DATA

2-72

MOTOROLA

SEMICONDUCTOR

2N5835
2N5836
2N5837

TECHNICAL DATA

The RF Line
2.5 GHz @ 10 mAdc -

2N5835

2.0 GHz @ 50 mAdc -

2N5836

1.7 GHz @ 100 mAdc--2N5837

NPN SILICON HIGH-FREQUENCY TRANSISTORS

HIGH FREQUENCY

... designed primarily for use in fact current-mode switching

circuits in military and industrial equipment. Suitable for use in
general high-frequency amplifier applications to 1.5 GHz.

TRANSISTORS
NPN SILICON

2N5835 10 mAdc, 6.0 Vdc Characteristics

fT = 2.5 GHz (Min)

re'Cc = 5.0 ps (Typ)

tr = 250 ps (Typ)
2N5836 50 mAdc, 6.0 Vdc Characteristics

fT = 2.0 GHz (Min)

rD'Cc = 6.0 ps (Typ)
tr = 320 ps (Typ)
2N5837 100 mAdc, 3.0 Vdc Characteristics

fj = 1.7 GHz (Min)

rb'Cc = 6.0 ps (Typ)
tr = 650 ps (Typ)

TO-206AF
2N5835

MIL-S-1S500 Processed Versions Available as MRF5836HX,

MRF5836HXV

'MAXIMUM RATINGS
Rating

Symbol

2N5835

2NS836

2N5837

Unit

Collector-Emitter Voltage

VCEO

5.0

Vdc

Collector-Base Voltage

VCBO

bmitter-uase voltage

VEBO

3.5

Collector Current Continuous

200

300

mAdc

Total Device Dissipation @Ta = 2SUC

Derate above 25C

200

300

mW
mW/C

Total Device Dissip8tion@Tc = 1(XrC

0.75
7.5

1.14

Derate above 100T

Storage Junction Temperature Range

Tstg

Vdc
Vdc

Watts

mW/C

55 to +200

STYLE 1:

Indicotot JEOEC Registered Data

PIN1.EMJTTER

V2V\~"^i

2.BASE
3. COLLECTOR

531

584

4U
432

041

495
533
053

SX^

PIN1 EMITTER
2. BASE
3. COLLECTOR
(CASE

041

G
H

091

1.17

122

on
1370

63S

NOTE ALLRULES ANONOTES ASSOOATEO WITHT072

OUTLINE SHALLAPPLY

0.U

2S4BSC

DM
A

MUMETERS
MAX
564

MOKES

MAX

531
452

0203

O230

495

0.178

0.195

0170

0210

165

216

0065

0OJ5

0016

0021

0406

0021

0.533
1.02
0483

0.016

0030

0016

0019

0100 BSC
0.036
00*6
0M8

0023
0500

0250

45'BSC
127 BSC

M
P

WCHES
MAX
UN
0230
0178
0195
0209

076

E
F

STYLE 10

KHUMETERS
MAX

0.305

G
H

0.914

1.17

0711

122

J
K

45' BSC
0050BSC

I 1.2?

1 0050

M
N
P

2.54 BSC

12.70

6JS
45* BSC
1.27BSC
_

1 1.27

0040
0.019
0.012
0.100 BSC
0.036
0046
0.028
0.048

0SM

0250

45* BSC

0.050 BSC

TO-206AF

CASE 26-03
TO-206AB

(TO-72)

(TO-46)

CASE 20-03

MOTOROLA RF DEVICE DATA

2-73

1 0.050

2N5835, 2N5836, 2N5837

'ELECTRICALCHARACTERISTICS (TA= 25C unless otherwise noted)
Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

V(BR|CBO

(lc = 10uAdc, lE=0)

(lC = 100 /iAdc, Ie - 0)

Vdc

2N5835
2N5836

2N5837

Emitter-Base Breakdown Voltage

V(BR)EBO

3.5

Vdc

(lE = lOOpAdc. IC =0)

Collector Cutoff Current

uAdc

'CBO

(VCb = 7.5 Vdc. IE 0)

(VCb = 10 Vdc. IE 0)
(VCb = 5.0 Vdc, lE = 0)

2N5835
2N5836
2N5837

Emitter Cutoff Current

0.01

ebo

100

uAdc

(Veb = 3.0 Vdc, lC = 0)

ON CHARACTERISTICS
DC Current Gain

hFE

(lC = 10 mAdc, Vce " 6.0 Vdc)

dC = 50mAdc. Vce = 60 Vdc)
(lC = 100 mAdc, VCe = 3.0 Vdc)

2N5835
2N5836
2N5837

Base-Emitter On Voltage

25
25

25
Vdc

VBE(on)

(lC " 10 mAdc, Vce = 60 vdc>

(IC = 50 mAdc, VCE =6.0 Vdc)

2N5835
2N5836

(lc - 100 mAdc, VCe = 3.0 Vdc)

2N5837

0.9

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product (D
(lC = 10 mAdc. Vce " 6-0 Vdc, f = 200 MHz)
(lC = 50 mAdc. Vce " 6.0 Vdc. f = 200 MHz)

GHz

<lc= 100 mAdc, VCe " 30 Vdc, f - 200 MHz)

2N5835

2.5

2N5836

2.0

2NS837

1.7

Collector-Base Capacitance

Ccb

(vCb = io Vdc, iE = o. f = o.i to 1.0 mhz)

2N5835
2N5836

(Vcb 5.0 Vdc. ie = 0. f = 0.1 to 1.0 MHz)

2N5837

Collector-Base Time Constant

0.8
3.5

5.0

'b'Cc

(lC = 10 mAdc. Vce " 60 Vdc, f =63.6 MHz)

(lC = 50 mAdc, Vce = 6.0 Vdc. f - 63.6 MHz)
(lC = 100 mAdc, Vce " 3.0 Vdc, f =63.6 MHz)

2N5835

5.0

2N5836

2N5837

6.0

SWITCHING CHARACTERISTICS <2)

Rise Time (See Figure 1)

0c "10 mAdc)
(lc =40mAdc)

2N5835
2N5836

Or =100 mAdc)

2N5837

r
-

250
320
650

Indicates JEOEC Registered Data

IT isdefined astho froquancy at which |h,0| extrapolates to unity.

@ Typical values shown in addition to JEDEC Registerod Data.
FIGURE 1 - SWITCHING TIME TEST CIRCUIT

To OscilloscopeVenial Inputs

(Tektronix 568 or Equivalent)

Channel 1

Channel 2

Vin

Vottt

This test set-up is designedto simulate

a cascadeol identicalstages. RssRv.
Vin-Voufl-OV
Qrefis a transistorof the
sametype as the transistor
under test.

tf,tf< 0.5 ns

-O -0.5 Vdc

Wlr

Ohms

380

100

100
200

38
19

5.0

-4.5 Vdc - 2N5835.2N5836

-2.5Vdc-2N5837

MOTOROLA RF DEVICE DATA

2-74

2N5835, 2N5836, 2N5837

FIGURE 2 - SWITCHING TIME

FIGURE 3 -

CURRENT-GAIN-BANDWIDTH PRODUCT

2N5835

900

Vin-Vo,,
700
VCE" 10V

600
3
UJ

VCE" 5.0 V

':\
-

-**^

2fi 5835

200
100

2.0

lC. COLLECTOR CURRENT(mAdc)

3.0

5.0

7.0

FIGURE 4 - CURRENT-GAIN-BANDWIDTH PRODUCT

FIGURE 5 - CURRENT-GAIN-BANDWIDTH PRODUCT

2N5836

2N5837

;r 4.o

I 3.5

V CE- i.0Vdc

3.0

V(JE-IOVdc

2.5

2 OVc

5.0 Vdt

2 0.1.0 Vdc

0
20

lC. COLLECTOR CURRENT(mAdc)

8.0

2N 58. :s

100

lC. COLLECTOR CURRENT(mAdc)

FIGURE 6 - COLLECTOR-BASE TIME CONSTANT

FIGURE 7 -

COLLECTOR-BASE CAPACITANCE

VCE'6.0 Vdc
2N 582

VCE* 3.0 Vdc

7 N5837

V fF" 6.0 Vdc

2N5 837

~2N5t 36

1
2.0

3.0

5.0 7.0

lC. COLLECTOR CURRENT(mAdc)

100

200

2.0

lC. COLLECTOR CURRENT(mAdc)

3.0

4.0

5.0

6.0

7.0

8.0

VCB.COLLECTOR-BASE VOLTAGE(VOLTS)

MOTOROLA RF DEVICE DATA

2-75

2N5835, 2N5836, 2N5837

2N5835 SCATTERING PARAMETERS

dC = 5.0 mAdc, Vce = 6.0 Vdc. Zq = Z\_ = 50 Ohms)

FIGURE B-S,,, INPUT REFLECTION COEFFICIENT

FIGURE 9 - S22. OUTPUT REFLECTION COEFFICIENT

FIGURE 11 - S21. FORWARD TRANSMISSION COEFFICIENT

FIGURE 10 - S12. REVERSE TRANSMISSION COEFFICIENT

JO"

JiO

150

160

170

3S0

330

190

200

210

iV v-, "".'',!~:ttM6W . ;>: <-.''':

\, ,\"' \

,,p

^^^^^^^^^^^

'mm^mm:^m^^M
ISO"

160

170

180

190

200

310

MOTOROLA RF DEVICE DATA

2-76

110

2N5835, 2N5836, 2N5837

2N5836 SCATTERING PARAMETERS

dC 100 mAdc, VcE = 10 Vdc. Zq = Z|_ = 50 Ohms)

FIGURE 12 -Sf], INPUT REFLECTION COEFFICIENT

FIGURE 13 - S22. OUTPUT REFLECTION COEFFICIENT

FIGURE 14 - S12. REVERSE TRANSMISSION COEFFICIENT

350

340

FIGURE 15 - S21. FORWARD TRANSMISSION COEFFICIENT

330

20"

350

340

330

.' :m^mmwwm^

;:':..*
310

50'

;::

3 280

':::'-:::.-::-:.;.r-'.'--:'." ':'; 3,c

W'~ '

" m.

'--OSGHi.v 06'"/07 0.8 09 10 ,;".'

:#
: mm,,
1 r^

S2| VOLTAGE RATIOS

."i;''\'
260

150

160

170

180

190

200

100

210

X ^

150

MOTOROLA RF DEVICE DATA

2-77

160

170

160

190

200

210

2N5835, 2N5836, 2N5837

2N5837 SCATTERING PARAMETERS

dC = 100 mAdc, Vce = 3.0 Vdc, Zg = Zl = 50 Ohms)

FIGURE 16 - S11f INPUT REFLECTION COEFFICIENT

FIGURE 17 - S22. OUTPUT REFLECTION COEFFICIENT

FIGURE 18 - S-|2. REVERSE TRANSMISSION COEFFICIENT

350

340

FIGURE 19 - S21. FORWARD TRANSMISSION COEFFICIENT

330

. _10

0
350
340
330
.____^^^^^^^^

(260

j!50

IHt*

'//M 2<o

i;c

230

-JO0

V-.V-.V.V-

:
150

160

170

180

190

200

':-^m^:m^: \iiai sg%^L.':-.;:

160

210

MOTOROLA RF DEVICE DATA

2-78

160

170

180

190

200

218

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N5849

The RF Line
40 W-50 MHz
RF POWER
TRANSISTOR

NPN SILICON

NPN SILICON RF POWER TRANSISTOR

. . . designed primarily for use in large-signal amplifier output stages,

the 2N5849 is intended for use in industrial communications equip
ment operating at frequencies to 80 MHz.

Specified 12.5 Volt, 50 MHz Characteristics Output Power = 40 Watts

Minimum Gain = 7.5 dB

Efficiency = 50%

rr^S=:

MAXIMUM RATINGS
Rating

Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous

Total Device Dissipation @Jq 25C

Symbol

Value

Unit

VcEO

Vdc

VCB

Vdc

VEB

4.0

1. DIMENSIONING ANDT0LERANONG PERANSI

Y14.5M. 1982.
2. CONTROLLING DIMENSION: INCH.

Vdc

7.0

Adc

100

Watts

571

mW/C

A
B
C

Tstg

-65 to +200

Derate above 25C

Storage Temperature Range

NOTES:

*lndicato JEOEC Rogisterod Data.

5.46

1.78

0.08

12.45

This device is designed for RF operation. The total device dissipation

rating applies only when the device is operated as an RF amplifier.

MUIMETERS
MN
MAX
9.40
9.78
813
838
17.02
20.07

M
r
R
s
T

5.97

0.18

1*0
1.78
45'NOM
1.27

INCHES
UN
MAX
0.370
0385
0.320
0.330
0.670
0.790
0.215
0.235
0.070

0.003
0.490

2-79

0.055
0070
45'NOM

0.050
0307

7.59

7.60

4.01

4.52

2.11
2.49

2.54

0.083

0.100

3.35

0.093

0132

0.299
0.158

CASE 14SA-09

MOTOROLA RF DEVICE DATA

0.007

0.178

2N5849
"ELECTRICAL CHARACTERISTICS (Tc = 25Cunless otherwise noted)
Symbol

Min

Collector-Emitter Breakdown Voltage! 1)

(lC = 200 mAdc. IB - 0)

V(BR)CEO

Collector-Emitter Breakdown Voltaged)

(lC = 100 mAdc, VB - 0)

V(BR)CES

Emitter-Base Breakdown Voltage

V(BR)EB0

4.0

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS
Vdc

Vdc

(l-10 mAdc, lc = 0)
Collector Cutoff Current

'CES

(VCe * 15 Vdc, VBE - 0, TA - +125CI

Collector Cutoff Current

'CBO

mAdc

1.0

mAdc

(VCb - IS Vdc. IE = 0)
ON CHARACTERISTICS
DC Current Gain

3.0

"FE

dC - 2.4 Adc, Vce " 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Cspacitance

Cob

(VCB 12.5 Vdc, Ie - 0, f - 0.1 to 1.0 MHz)

FUNCTIONAL TEST

Common-Emitter Amplifier Power Gain

7.5

(Pout" 40 W, VCc - 125 Vdc, f = 50 MHz>

Collector Efficiency

(Pout "* 40 w. VCC " 12-5 Vdc, f 50 MHz)

'Indicates JEOEC Rogiiterod Data.

(l)Pultod thru a 25 mH Inductor.

FIGURE 1 - 50 MHz POWER GAIN TEST CIRCUIT

<> VCC

+1
I
I n / 1000
iuw pF
1&ZZZ 0Adtz 0.07-ir fi

*f^L "T^ "F<X tvI

25-280pF. Arco464 or Equhrtltnt

80-4B0 pF. Arco 4S6 or Equivtlsnt

C3 0-75pF, Ktmmntund MAPC 75 or Equwtlmt

050 pF, UmmartiMd MAPC50 or Equ'mltflt

1 Turn #14 AWG 5/16" 1.0.

2-1/2 Toms #22 AWG on 3/8" Ftrritt Bead

U
L4

IS Turns #1S AWG 3/8" 1.0.2 Uvtrs. 9 Tumi Etch

4 Turns#14 AWG7/16" I.D.7/16" Long

MOTOROLA RF DEVICE DATA

2-80

2N5849

FIGURE 2 -

FIGURE 3 - POWER OUTPUT versus FREQUENCY

POWER OUTPUT versus POWER INPUT

VCC-12.5 Vdc

f-Si )MHl

vcc-i J.5Vdc
_

40
=

.OW"'

Pin- 6.0 y
S.0W

y
4.0 W'

i&y
1.0

2.0

3.0

4.0

5.0

6.0

7.0

8X1

f. FREQUENCY(MHi)

Pin. INPUT POWER(WATTS)

FIGURE 5 - PARALLEL EQUIVALENT INPUT

FIGURE 4 - PARALLEL EQUIVALENT INPUT

CAPACITANCE versus FREQUENCY

RESISTANCE versus FREQUENCY

3000

5.0

Vce-12.5 Vdc

vcc-i .5 Vdc
2500

g 4.0
X

1500

|3.0

"'S,S^0U-20W

S
5S

S^oul -20W

2X1

500

(N.

j -500

-40W

.$ IX)
cc

-1000

-1500

I. FREQUENCY(MHt)

f. FREQUENCY (MHt)

FIGURE 6 - PARALLEL EQUIVALENT OUTPUT

FIGURE 7 - DC SAFE OPERATING AREA

CAPACITANCE versus FREQUENCY

I00O

vcc-i

lrin

-TC

.5 Vdc

7.0

>CMax

600

5 5"
% 700

3
5

3.0

BUU

201 /

tr
3

500

2.0

^ 400
BVCEO*in
300

1.0

0.3

I. FREQUENCY (MHt)

0.5

0.7

IX)

2X>

3.0

5.0

7.0

VCE.COLLECTOR-EMITTER VOLTAQE(VOLTS)

MOTOROLA RF DEVICE DATA

2-81

2N5849

40 WATT, 50 MHz TRANSMITTER SCHEMATIC

0.005 nF
15 pF

43 nH

5-80 pF

25-280 pF

0.15 <iH

^n 25-280 pf

> JUT* ^"^

ipF^'
Po-40W
Pin 20 mW

*FerroxcubePart Number

RFC1 - 20Turns #18AWG, 3/16"I.D.. 2 Layers.

Ovcrtll Gain 33 dB

10 Turns Each, CloseWound.

OverallEfficiency 59.254

RFC2 - 18Turns. #18AWG.3/16" I.D.. 2 Layers.

9 Turns Each. Close Wound.

MOTOROLA RF DEVICE DATA

2-82

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N5943

The RF Line
1.2 GHz-50 mAdc

NPN SILICON
HIGH-FREQUENCY
TRANSISTOR

NPN SILICON HIGH-FREQUENCY TRANSISTOR

NPN SILICON

. . . designed specifically for broadband applications requiring low

cross-modulation distortion and low-noise figure. Characterized for
use in CATV applications.
Low Noise Figure @f = 200 MHz
NF (Narrowband) = 3.4 dB (Typ)

NF (Broadband) = 6.8 dB (Typ)

High Current-Gain - Bandwidth Product -

Completely Characterized with s and y-Parameters

fj = 1200 MHz (Min) @ lc = 50 mAdc

"MAXIMUM RATINGS
Rating

-{*]
Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VebO

3.5

Vdc

Collector Current Continuous

400

mAdc

Total DeviceDissipation @T/\ > 25C

1.0

Watt

5.7

mW/C

3.S

Watts

0.02

w/c*

Derate above 25C

Total Device Dissipation @Tq < 25C

Derate above 25C

Operating and Storage Junction
Temperature Range

TJ-Tstg

Vdc

-65 to +200

STYLE 1:

PIN 1.EMITTER

.^...pjn

2 BASE

3COLLECTOR I+I*03SH).014KS)|t|A|h1

'Indicates JEDEC Registered Data.

NOTES:
1. DIMENSIONINGAND TOLERANCINGPER ANSI
Y14.5M. 1982.
2. CONTROLLINGDIMENSION: INCH.

FIGURE 1 - NARROW-BAND TEST CIRCUIT

3. DIMENSIONJ MEASUREDFROMDIMENSIONA
MAXIMUM.
4. DIMENSIONB SHALL NOT VARY MORE THAN 025
(0.010) IN ZONE R. THIS ZONE CONTROLLED FOR.
AUTOMATICHANDLING.
5. DIMENSION FAPPLIESBETWEEN DIMENSION P
ANO L DIMENSION D APPLIES BETWEEN
DIMENSIONI AND K MINIMUM. LEAD DIAMETER
IS UNCONTROLLEDIN DIMENSION P ANO
BEYONDOlMENStON K MINIMUM.
DIM
A
B

C
D

041

023
041

G
H

LI-2 turns #20wire

l/4"ID.3/tS"tong
L2- 5 turns #18 win

1/4" 10,5/8" long,

tapped 1-3/4 turns
(torn collector

All capacitorsin pF
unltss othtrwist noted.

MILLIMETERS
mm
MAX
851
939
775
850
6.10
660

053
104

0016

0009

0041

048

0016

5 08 BSC
072
086
074
114
1270

635

45 BSC
127
254

MAX
0370

0.305
0240

0335
0260
0021

INCHES
MIN
0335

1905
_

0028

2-83

0034

0029

0045

0500
0.250

0750
_

45'BSC

1 0050
0100 i -

CASE 79-04
TO-20SAD

(TO-39)

MOTOROLA RF DEVICE DATA

0019

0.200 BSC

2N5943

'ELECTRICAL CHARACTERISTICS (Ta = 25C unlessotherwisenoted)

Characteristic

| Symbol |

Mln

V(BR)CEO

V(BR)CB0

V(BR)EB0

3.5

Unit

TVP

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

He "5.0 mAdc, lB"0)

Collector-Base Breakdown Voltage

Vdc

Uc-100uAdc. IE = 0)
Emitter-Base Breakdown Voltage

dE" 100uAdc, lc-0)

Collector Cutoff Current

'CEO

Vdc

(lAdc

pAdc

(VCE - 20 Vdc, Ib - 0)
Collector Cutoff Current

'CBO

(VCB - 15 Vdc, lE = 0)

ON CHARACTERISTICS

hFE

DC Current Gain

300

(lC - 50 mAdc, VCe * IS Vdc)

Collector-Emitter Saturation Voltage

vCE(sat)

(lC 100 mAdc, Ib 10 mAdc)

Base-Emitter Saturation Voltage

vBE(sat)

(lC - 100 mAdc, Ib " 10 mAdc)

0.15

0.2

Vdc

0.88

1.0

Vdc

DYNAMIC CHARACTERISTICS

Current-Gain Bandwidth Product (Figure 2)

MHz

C 25 mAdc, VC - 15 Vdc, f - 200 MHz)

(lC - 50 mAdc, VCE - 15 Vdc, f 200 MHz)
dC - 100 mAdc. VCE " 16 Vdc, f - 200 MHz)

1000

Collector-Base Capacitance (Figure 5)

(Vcb " 3 v<fc' >E - 0, f - 100 kHz)

Ccb

Emitter-Base Capacitance (Figure 5)

Ceb

(VEB 0.5 Vdc. IC - 0. f - 100 kHz)

Small-Signal Current Gain

1350

1200

1550

1000

1425

1.0

1.6

2.5

8.4

hfe

rb'Cc

2.0

2400

350

(lC " 50 mAdc, Vce " 15 Vdc, f - 1.0 kHz)

Collector-Base Time Constant

5.5

(IE 50 mAdc, VCb " 15 vdc<f " 31.8 MHz)

Noise Figure

(lC - 30 mAdc. VCE - 15 Vdc. f - 200 MHz) (Figure1)

3.4

(lc 35 mAdc. VCe " 15 Vdc. f-200 MHz) (Figures6. 11, 14) (1)

6.8

8.0

FUNCTIONAL TEST

Gpe

Common-Emitter Amplifier Power Gain

(lC 10 mAdc, VCe " 15 Vdc, f = 200 MHz) (Figure 1)

dC - 50 mAdc, VCE - 15 Vdc, f - 250 MHz) (Figure6)

11.4
7.0

Intermodulation Distortion (Figure 7)

7.6
-

-50

(lC 50 mAdc. VCE 15 Vdc, V^j, - +50 dBmV)

Cross Modulation Distortion (Figure 8)

dC - 50 mAdc, VcE - 15 Vdc, Vout - +40 dBmV)

(lC - 50 mAdc. VcE 15 Vdc, Vout - +50 dBmV)

dB
-

-67
-45

'Indicates JEOEC Registered Data.

(1) Includes nol figure of post-amplifiar and matching pad.

MOTOROLA RF DEVICE DATA

2-84

-42

2N5943

FIGURE 2 - CURRENT-GAIN 2.5

FIGURE 3 - COLLECTOR-BASE TIME CONSTANT

BANDWIDTH PRODUCT

vce- IS Vdc

VCE- 15 Vdc

2.0

1.5

1.0

0.5

100

120

140

ISO

lC.COLLECTOR CURRENT (mAdc)

3.0

100

120

140

160

FIGURE 5 - CAPACITANCES versus REVERSE VOLTAGE

FIGURE 4 - SATURATION VOLTAGES

5.0

lC. COLLECTOR CURRENT(mAdc)

\II'1
1

ic/i

2.0

VBEI ut) =

\C lb

. 50

3.0

<
<

>- 0.2

2.0

0.1

0.0S

1.0

100

200

300

0.1

500

0.2

0.3

0.5 0.7 1.0

2.0

3.0

5.0 7.0

Vr. REVERSE VOLTAGE (VOLTS)

lC. COLLECTOR CURRENT (mAdc)

FIGURE 6 - BROADBAND TEST CIRCUIT

1.0-10pF

C2.C7

0.01 (iF

C3
0.5-6.0pF
C4.C6 1500 pF

OUTPUT C5

J0HANS0N 2351 OR EQUIVALENT

JOHANSON 4642 OR EQUIVALENT

470pF
2 TURNS AWG#26.5/32" I.D.
111HMOLDED CHOKE
5 TURNS AWG#26.3/32" I.D.
FERRITE CHOKE. 3TURNS #30 ON
STACKPOLE 57-0156 BEAD

2 TURNS AWG#26,3/32" I.O.

AWG #30 TRIFILAR WOUND 1-9-9 ON

STACKPOLE570985. #11 TOROIO

270 OHMS
18 OHMS
150 OHMS

GARLOCKTEFLON SOCKET

MOTOROLA RF DEVICE DATA

2-85

2N5943

FIGURE 8 -

FIGURE 7 - CROSS-MODULATION DISTORTION versus

CROSS-MODULATION

DISTORTION versus OUTPUT LEVEL

COLLECTOR CURRENT

1 -,0

VcE-15Vdc 1

Vl-P ' 15 Vdc

Channel 13

Chtnntl 3

-20

cc
a

-50

-30
ic- 20 mAdc

-60
35 mAdc

1
25

lC. COLLECTOR CURRENT(mAdc)

FIGURE 9 -

NARROWBAND NOISE FIGURE versus

FIGURE 10 - NARROWBAND NOISE FIGURE versus

COLLECTOR CURRENT

COLLECTOR CURRENT
10

105 M"

^r1

I I

RS-I :on,v CE-6X

H1
1
1

7.0

I 6.0

TO 20 Vdc

fs 10012. VCE" 6.0 TO 20 Vdc

" Rs 50n. VCE-6.0 TO20 Vdc

Rs 250Il.VcE =6.0TO 20VdcJ

8.0

RS - 250 fl, Vce-6.0 TO 20Vdc

OUTPUT LEVEL (dBmV)

RS-5 JR.Vc

^zz

:6.0T l20Vd

z" 3.0

2.0

100

lC. COLLECTOR CURRENT (mAdc)

FIGURE 11 -

BROADBAND NOISE FIGURE versus

FIGURE 12 -

FREQUENCY

1 1

VrF15Vd

R,
VC :-6 0t >20

1-200 MHz

8.0

Vdc

6.0

lC 70 mAdc

OtVK* and Circ uit

SUmACc
3

4.0

30 mAdc

| 3.0

10 mAdc

E
6.0
Od riceOnly

u.*

2.0

5.0

4.0

100

NARROWBAND NOISE FIGURE versus

COLLECTOR CURRENT
9.0

lC. COLLECTOR CURRENT (mAdc)

100

200

I. FREQUENCY(MHz)

lC. COLLECTOR CURRENT(mAdc)

MOTOROLA RF DEVICE DATA

2-86

2N5943

FIGURE 14- INPUT ADMITTANCE

versus COLLECTOR CURRENT

FIGURE 13- INPUT ADMITTANCE versus FREQUENCY

-VcE-15

Vdc

VcE 15 Vdc

IC-50 mAdc

f 200 MHz

40
Sis

~8te

t>
0

to
.

bit
10

200

300

500

f, FREQUENCY (MHz)

FIGURE 15 -

100

lC. COLLECTOR CURRENT(mAdc)

REVERSE TRANSFER ADMITTANCE

FIGURE 16 -

REVERSE TRANSFER ADMITTANCE versus

versus FREQUENCY

COLLECTOR CURRENT

l E-15Vae

Vce- 15 Vdc"^

If - 200 MHz

Ifi- 50 mAdc

-bre

6.0
-Oft

Bra -0

-r

200

300

500

f. FREQUENCY(MHz)

FIGURE 17 -

FORWARD TRANSFER ADMITTANCE

FIGURE 18 -

100

FORWARD TRANSFER ADMITTANCE versus

versus FREQUENCY
400

lC. COLLECTOR CURRENT (mAdc)

COLLECTOR CURRENT

250

Vce . 15 Vdc

lC 50 mAdc

I-20C MHz

300

200

150

-1 le

-bf,
too

100

1 It

0
.

-100

0
200

300

500

(.FREQUENCY (MHz)

lC. COLLECTOR CURRENT (mAdc)

MOTOROLA RF DEVICE DATA

2-87

100

2N5943

FIGURE 20 -

OUTPUT ADMITTANCE versus COLLECTOR

FIGURE 19- OUTPUT ADMITTANCE versus FREQUENCY

CURRENT

VCE=
ic-

0 mAdc

l = 200MHr

5.0

Doe

"
200

300

500

I
700

1000

FIGURE 21 -

100

lC.COLLECTOR CURRENT ImAdc)

I. FREQUENCY (MHr)

INPUT REFLECTION COEFFICIENT versus

FIGURE 22 -

OUTPUT REFLECTION COEFFICIENT versus

FREQUENCY

30"

350

340

330

150

160

170

180

190

200

210

170

MOTOROLA RF DEVICE DATA

2-88

180

350

190

340

200

330

210

2N5943

FIGURE 23 -

REVERSE TRANSMISSION

FIGURE 24 -

FORWARD TRANSMISSION COEFFICIENT

COEFFICIENT versus FREQUENCY

350

340

versus FREQUENCY

330

10
0
350
.--*

340
330
- -.---.-,.--

40 :'

~""~VC-'SVt jl&il

~fc2 VcE' IS Vdc"

I,(. :./.../. 7 lc -35mAdc

lC - 3i nA:

O' ?Jj - Zl.* 50J! .

310

:;-::.

300

310o
3QQ3

222

230

270

260

280<>

wo- /; $/;, 260

'_ ,Wm~hz

2500

250
, /

240

'240

230

1
"1

150

160

170

190

FIGURE 25 -

200

210

150

160

170

180

190

INPUT REFLECTION COEFFICIENT AND OUTPUT REFLECTION

COEFFICIENT versus FREQUENCY

MOTOROLA RF DEVICE DATA

2-89

200

210

MOTOROLA

SEMICONDUCTOR

2N5944

TECHNICAL DATA

2N5945
2N5946
The RF Line
2.0,4.0, 10 W-470 MHz
RF POWER

TRANSISTORS

NPN SILICON RF POWER TRANSISTORS

NPN SILICON
. . . designed for 7.0 to 15 Volts, UHF large signal amplifier applica

tions required in industrial and commercial FM equipment operating

in the 400 to 960 MHz range.

Specified 12.5 Volt, 470 MHz Characteristics Power Output = 2.0 W - 2N5944
4.0 W -2N5945
10W-2N5946

Minimum Gain = 9.0 dB - 2N5944

8.0 dB - 2N5945
6.0 dB -

2N5946

Efficiency = 60% Minimum

Characterized with series equivalent large-signal impedance

parameters

rA~i

p
8-32 NC 24

MAXIMUM RATINGS
Rating

Symbol

'Collector-Emitter Voltage

vCEO

'Collector-Base Voltage

vCBO

Emitter-Base Voltage

2N5944 | 2N5945 | 2N5946

r-?

JLLe r

Unit
Vdc

DIM
/i

vEBO

INCHES

MILLIMETERS

Vdc

MIN

MAX

MIN

MAX

Vdc

7.06

7.26

0.278

0.286

6.20

6.50

0.244

0.256

Collector Current - Continuous

0.4

0.8

2.0

Adc

TotalDevice Dissipation @Tc=25C'1I

14.99

16.51

0.590

0.650

5.0

37.5

Watts

5.46

5.96

0.215

0.235

28 5

35 5

214

mW/C

1.40

1.65

0.055

0.065

1.52

0.08

in lbs.

11.05

Derate above 25C

'Storage Temperature Range

Tstg

-65 to+20

Stud Torque'2)

Indicates JEDEC Registered Data

11iThose devicos are designed lor RF operation

(2)For ropeatod assembly use 5 in lbs.

0.17
-

1.27

0003
0.435

45 N0M

The total device dissipation rating

applios onlv when the devices arc operated as RF amplifiers.

0.060

0.007
-

45 NOM
0050

3.00

3.25

0118

0.128

1.40

1.77

0.055

0070

292

368

0.115

0.145

STYLE 1:

PIN1. EMITTER
CASE 244-04

2. BASE
3 EMITTER

4 COLLECTOR

MOTOROLA RF DEVICE DATA

2-90

2N5944, 2N5945, 2N5946

'ELECTRICAL CHARACTERISTICS (TC = 25C unlessotherwise noted)
Typ

Symbol

Characteristic
OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR,CE0

Vdc

dC - 50 mAdc, lB 0)

2N5944

C 100 mAdc. IB = 0)
Or 200 mAdc. IB = 0)

2N5945
2N5946

Collector-Emitter Breakdown Voltage

Vdc

V(BR)CES

(1C= 50 mAdc, VBE = 0)

(lC = 100 mAdc. Vqe = 0)
(lC = 200 mAdc, VBE = 0)

2N5944
2N5945
2N5946

Emitter-Base Breakdown Voltage

V(BR!EB0

Vdc

(lE 1.0 mAdc. lc - 0)

2N5944

4.0

<IE 2.0 mAdc, lC = 0)

(1 = 4.0 mAdc, 1c 0)

2N5945

4.0

2N5946

4.0

Collector Cutoff Current

mAdc

ices

(Vce = 15 Vdc, VB = 0. TC = 55C)

2N5944

2N5945.2N5946
Collector Cutoff Current

0.2

0.5

20
mAdc

'CBO

(VCB = 15Vdc. Ie=0)

2N5944.2N5945

1.0

2.0

2N5946
ON CHARACTERISTICS

DC Current Gain

"FE

C 100 mAdc, VC 5.0 Vdc)

2N5944

lie " 200 mAdc, Vce = 5.0 Vdc)

(lC = 500 mAdc, VCe = 5.0 Vdc)

2N5945

2N5946

DYNAMIC CHARACTERISTICS

Output Capacitance

C0b

(VCB = 12.5 Vdc, lE = 0. f = 1.0 MHz)

2N5944

2N5945
2N5946

FUNCTIONALTEST (Figures 20 and 21).

Common-Emitter Amplifier Power Gain

Gpe

tVCC = 12.5 Vdc, Pout = 2.0 W, lc(max) =267 mAdc.

2N5944

9.0

2N5945

8.0

9.0

2N5946

6.0

7.0

f = 470 MHz)

<VCc = 12.5 Vdc, Pout = 4.0 W, lc<max) = 533mAdc,

f = 470 MHz)

(Vce = 12.5 Vdc, P0ut = 10 W. lC(max) = 1.33Adc.

f = 470 MHz)

Collector Efficiency

(VCc = 12-5 Vdc, Pout = 2.0 W. Ic(max) = 240 mAdc,

2N5944

2N5945

2N5946

f = 470 MHz)

(VCc " 12.5 Vdc. Pout = 4.0 W. Ic(max) = 500 mAdc.

f = 470 MHz)

(Vce =12.5 Vdc, Pout = 10 W, lc(max) = 1.3 Adc.

f = 470 MHz)
'Indicate-! JEDEC Registered Data

These devices are available in various packages, such as a studless

stripline package, TO-205AD (TO-39)and also in chip form on beryllium

oxide carriers for hybrid assemblies.
For further information, contact your nearest Motorola representative
or the factory representative.

MOTOROLA RF DEVICE DATA

2-91

2N5944, 2N5945, 2N5946

2N5944
TYPICAL PERFORMANCE DATA

FIGURE 2 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 1 - SERIES EQUIVALENT IMPEDANCE

4.0

1
(> 470 MHt

Pin-200mW

3.0

S 2.0

g 1.0

Zol Conjusate oftheoptimum load impedance intowhich thedevice output

operates at a givenoutputpower, voltage and frequency.
VCC* 12.5Vdc,Pout* 20 W

7.0

8.0

9.0

VCC.SUPPLYVOLTAGE(VOLTS)

FIGURE 4 - OUTPUT POWER versus FREQUENCY

FIGURE 3 - OUTPUT POWER versus INPUT POWER

vc : -12.6 Vdc

Vcc-12-5

Vdc
1*470 MHz

Pin 320 mW

| 3.0

200 mW

$
o

160 mW

2.0

80 mW

i i.o

200

300

400

470

Pjn. INPUTPOWER (mW)

FIGURE 6 - OUTPUT POWER versus INPUT POWER

FIGURE 5 - OUTPUT POWER versus INPUT POWER

Vce*
~

490

I. FREQUENCY (MHz)

.5 Vdc

_vc ;-13.

Vdc
f-96( MHz

f*4 70 MHt

1.0

160

0.2

240

0.4

0.6

Pjn. INPUTPOWER (WATTS)

Pin.INPUTPOWER (mW)

MOTOROLA RF DEVICE DATA

2-92

0.8

2N5944, 2N5945, 2N5946

2N5345

TYPICAL PERFORMANCE DATA

FIGURE 7 -

FIGURE 8 - OUTPUT POWER versus SUPPLY VOLTAGE

SERIES EQUIVALENT IMPEDANCE

8.0

Pin*0.6Wm

1-470 MHz

j2 6.0
I
S

S 40
=>
=>

5 2.0

Zol* - Conjugate of theoptimum load impedance intowhich thedevice output

operates at a givenoutputpower, voltage andfrequency.
Vce-125 Vdc, P0Uf 40 W

7.0

8.0

9.0

Vce. SUPPLY VOLTAGE (VOLTS)

FIGURE 10 - OUTPUT POWER versus FREQUENCY

FIGURE 9 - OUTPUT POWER versus INPUT POWER

vec

| 7.0 _v(

C-12. iVdc
I-47C MHz

-12.5 Vdc

j= 6.0

Pin"
"0.6W

f 5.0
0.4 W

3.0

01V

1.0

0.3

0.5

0.7

0.9

420

*40

Pin.INPUTPOWER(WATTS)

460

f. FREQUENCY (MHz)

FIGURE 11 - OUTPUT POWER versus INPUT POWER

FIGURE 12 - OUTPUT POWER versus INPUT POWER

vec 7.5 Vdc

i -470MH z

Z 8.0 _vc

iz 3.0
<

Vdc
960 MHz

<r
UJ

^ 6.0
3

o
.3

S 40
2.0

0.2

0.4

1.25

0.6

1.75

2.25

Pin.INPUTPOWER(WATTS)

Pin.lNPUTPOWER (WATTS)

MOTOROLA RF DEVICE DATA

2-93

2.75

2N5944, 2N5945, 2N5946

2N5946
TYPICAL PERFORMANCE DATA

FIGURE 14 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 13- SERIES EQUIVALENT IMPEDANCE

1
Pjn*2.5Wittt

Zql* = Conjugate ofthe optimum load impedance into which the device output
operates at a given output power, voltage andfrequency.

7.0

Vce-12.5 Vdc.Pout-12 W

8.0

9.0

10
11
12
13
VccSUPPLYVOLTAGE(VOLTS)

FIGURE 16 - OUTPUT POWER versus FREQUENCY

FIGURE 15 - OUTPUT POWER versus INPUT POWER

Vce 12.5 Vdc

VC(

I-47G MHz

Pin-3.0 W

i'b

2.5 W
2.0 W

1.5 W

ft
3
O

LOW

"**

0.5 W

1.0

2.0

3.0

4.0

460

Pin. INPUT POWER (WATTS)

FIGURE 17 - OUTPUT POWER versus INPUT POWER

1 _VC

C*7.5 Vdc
I-47C MHz

5.0

1 3.0

1.0

1.5

480
f. FREQUENCY (MHz)

2.0

Pin. INPUTPOWER(WATTS)

MOTOROLA RF DEVICE DATA

2-94

500

2N5944, 2N5945, 2N5946

FIGURE 18 10-WATT BROADBAND UHF AMPLIFIER

r~n -

PARTS LIST^
C1.C2.C4.C13.C14

0.9-7.0 pF ARCO 400 or equivalent

C3.C7.C8

L1.L3

3.9 (iH Molded Choke MILLER or equivalent

L2.L4

5 Turns #18 AWG Enameled 0.2" I.D.

25 pF UNELCO or equivalent

21.Z2.23

C5.C11

0.1 (IF Ceramic 35 V

C6.C12

680 PF ALLEN BRADLEY Foedthru

C9.C10

1.0 uF. 35 V Tantalum

FERROXCUBE Forrito Choko VK200 20/4B

Microstrip Lines (See Template Below)

2N5944

2N5946

FIGURE 19 -

OUTPUT POWER versus FREQUENCY

VCC ; 12.5 Vdc

Pi
10W AMPLIFIER PERFORMANCE

vCc

12.5 Vdc

Frequency

Pout

MHz

Amp

440

250

8.5

1.5

450

250

1.6

460

250

1.6

470

250

10.9

1.5

480

250

8.2

1.2

(ill

.,.!!

450

460

470

1. FREQUENCY (MHz)

P.C. Board

3x2x0.062 Inch G 10 Per Templat

FIGURE 20 PC BOARD PHOTOMASTER

10 WATT BROADBAND AMPLIFIER
FIGURE 21 PHOTO OF 10 WATT BROADBAND AMPLIFIER

MOTOROLA RF DEVICE DATA

2-95

48D

2N5944, 2N5945, 2N5946

NOTE: The Printed Circuit Board shown is 75% of the original.

RGURE 22 470 MHz TEST CIRCUIT

Bead

|_1

TL3

TL2

h-Q=0-

C3:

TTT

<vCc

TL4

02 _

TL1

50 >Q? At" LZZt tbTux

044:

01, 02, 08,010 Johanson Trimmer. JMC #5501

TL1 Micro Strip 0.26* x 2.9*

C3 100 pF Unelco 350 Vdc J101

C415pFUnolco

TL2
TL3
TL4
TL5

C5 680 pF All8n Bradley Feed-Thru

06 0.1 fif Monolithic
C7 1 uF Tantalum Sprague 10% 35 Vdc
C9 5 mF Electrolytic 5-25 Vdc

Micro
Micro
Micro
Micro

Strip
Strip
Strip
Strip

0.055" x 3.9*
0.055" x 2.9*
0.26* x 2.9"
0.50" x 1.2*

L1 #18 AWG Wire 0.750" Long

L2 VK200 20/4B

B1 Ferroxcube Bead, 56-530-65-3B

RGURE 23 470 MHz TEST CIRCUIT SCHEMATIC

MOTOROLA RF DEVICE DATA

2-96

Board 0.062* Glass Teflon

2 oz. Cu CLAD

er = 2.55

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N6080

The RF Line
4.0 W-175 MHz

RF POWER
TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON

... designed for 12.5 Volt VHF large-signal power amplifierapplica

tions required in military and industrial equipment operating to
300 MHz.

Specified 12.5 Volt, 175 MHz Characteristics Output Power = 4.0 W

Minimum Gain = 12 dB

Efficiency = 50%

Characterized with Series Equivalent Large-Signal Impedance

Parameters

MAXIMUM RATINGS
Rating

Symbol

Value

Collector-Emitter Voltage

VcEO

Vdc

Collector-Base Voltage

VcbO

Vdc

Emitter-Base Volt8ge

vEBO

4.0

Vdc

1.0

Adc

Watts

Collector Current -

Continuous

Total Device Dissipation @Tc 25C (2)

Derate above 25C
Storage Temperature Range

Tstg

Stud Torque (1)

68.5

Unit

mW/C

-65 to +200

6.5

in. Ib.

STYLE 1:
PIN 1. EMITTER
J. BASE
3. EMITTER
4. COLLECTOR

NOTES:
1. DIMENSIONING ANO T0LERANCINGPERANSI

Y14.5M. 1382.
2. CONTROLLINGDIMENSION: INCH

DM
A

(2) These devices are designed for RF operation. The total device dissipation rating applies
only when the devices are operated as RF amplifiers.

9.40

8.13

17.02
5.46

"Indicates JEDEC Registered Data.

(1) For repeated assembly use 5 in Ib.

KUMETERS
MM
MAX

J
K

1.78
0.06
12.45

1.40

M
P

9.78
833
20.07
5.97

0.18

1.78
45N0M
1.27

INCHES
MIN
MAX
0.370
0.385
0120
0.330
0.670
0.790
0215
0.235
0070

0003

0490
0055

0070
45N0M

0.050

7.59

7 60

0.299

0.307

4.01

2-11
249

452
2.54
3.35

0.158
0083

0100

0098

0132

CASE 145A-09

2-97

s
U

MOTOROLA RF DEVICE DATA

0.007

0.178

2N6080

ELECTRICAL CHARACTERISTICS (Tc= 25C unless otherwise noted.)

Characteristic

| Symbol |

Min

V(BR)CEO

V|BR)CES

V(BR)EB0

4.0

Typ

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

0c = lOmAdc. Iq-O)
Collector-Emitter Breakdown Voltage

Vdc

(lC= 5.0 mAdc. VBE=0)

Emitter-Base Breakdown Voltage

Vdc

(lE= I.OmAdc, lc- 0)

Collector Cutoff Current

'CES

5.0

mAdc

0.25

mAdc

(VC " 15 Vdc. V8E = 0. Tc = +55C)

Collector Cutoff Current

CBO

<VCb- 15 Vdc, Ie-O)

ON CHARACTERISTICS
OC Current Gain

hFE

5.0

(lC ' 0.25 Adc, Vce " 5.0 Vdc)

DYNAMIC CHARACTERISTICS

C0b

Output Capacitance

(VCb - 15 Vdc, lE - 0, f = 0.1 MHz)

FUNCTIONAL TEST

Common-Emitter Amplifier Power Gain

(Pout " 40 w- VCC" 12.5 Vdc. f = 175 MHz)

Collector Efficiency

<pout" 4.0 W, Vce = ^-B Vdc, f -175 MHz)

'Indicates JEDEC Registered Oata.

FIGURE 1 - 175 MHz TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-98

<
o

Pout.OUTPUTPOWER (WATTS)
O

/ V V *rf

7 'T'k

-P-A-'

--/ /
i
fr
pj-

Poul. OUTPUT POWER (WATTS)

/ // /

^II

H
2Z

Pout. OUTPUTPOWER(WATTS)

. *A -*'

Z
O)
o
00
o

MOTOROLA

SEMICONDUCTOR

2N6081
MRF221

TECHNICAL DATA

The RF Line
15 W-175 MHz

RF POWER
TRANSISTORS

NPN SILICON RF POWER TRANSISTORS

NPN SILICON

. . . designed for 12.5Volt VHF large-signal power amplifier applica

tions required in commercial and industrial equipment operating to
300 MHz.

l wunrnnj

i Ml

now

*~HM I MUX
111 i ts>

odj i i n

tin

I D | 1

Specified 12.5 Volt, 175 MHz Characteristics WIS

Minimum Gain = 6.3 dB

1 QM&o^ueTaiu*CA6'VA*S'

Efficiency = 60%

i cotcug wnwo. iv*

Characterized with Series Equivalent Large-Signal Impedance

Parameters

ixst
niTn
ICOlUCtW

MAXIMUM RATINGS
Unit

Symbol

Value

Collector-Emitter Voltage

VCEO

Vdc

Collector-Bass Voltage

vCB0

Vdc

Emitter-Base Voltage

VEB0

4.0

Vdc

2.5

Adc

Watts

177

mW/C

-65 to +200

6.5

in. lb.

Rating

Collector Current Continuous

Total Device Dissipation @Tc - 25C (1)

Derate above 25C
Storage Temperature Range

Tstg

Stud Torque (21

'Indicates JEDEC Registered Data for 2N6081.

(1) These devicesaredesigned for RF operation. The total devicedissipation rating applies
only when the devices are operated as RF amplifiers.
(2) For repeated assembly use 5 in. lb.

MOTOROLA RF DEVICE DATA

2-100

1 IMWCWiGueTOUUIOlG*"
2 COwTROUMCIWtNSXM INCH

ooo ; -

on i oki ;

1 1 1 tin 1

i i

h"r
i

Output Power = 15 W

11'

I I t j 11
-

B-WM

THOU

- | cm
'" I 191
! OK'

> S IB j

l | ll ,
\ T

L-<!_1.

in!

io 1 m '

! im i

2N6081, MRF221
'ELECTRICAL CHARACTERISTICS <TC = 25Cunless otherwise noted.)
Characteristic
Symbol T

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(IC-20mAdc, lB=0)
Collector-Emitter Breakdown Voltage

(IC-10mAdc,VBE-0)
Emitter-Base Breakdown Voltage

(l - 2.0 mAdc, lC=0)

Collector Cutoff Current

V(BR)CE0

Vdc

V(BR)CES

Vdc

V(BR)EB0

4.0

Vdc

'CES

<VCE 15 Vdc,VB- 0, TC- +55C)

Collector Cutoff Current

ICBO

(VCB-15Vdc,lE-0)

8.0

mAdc

0.5

mAdc

ON CHARACTERISTICS
DC Current Gain

6.0

"FE

(lC - 0.5 Adc, VCe " 50 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

C0b

IVcb " 15 Vdc, Ie - 0, f = 0.1 MHz)

FUNCTIONAL TEST

Common-Emitter Amplifier Power Gain

Gpe

6.3

<pout" 's w. VCC '2.5 Vdc. f = 175 MHz)

Collector Efficiency

(Pout 15 W, VCe = 12.5 Vdc, f = 175 MHz)

'Indicates JEDEC Registered Data for 2N6081.

FIGURE 1 - 175 MHz TEST CIRCUIT

11L

1 11 1000 12.
111

'pOO^PT4 F "p pF

RF
OUTPUT
RF
.
INPUT'

Q--r^
;tc2

rwT
RFC TKIOOpF

C1.2,3,4 5.0-80 pF ARCO462

LI StraighlWire.#14AWG.
13/8" Long

7jZ100 pF

, s C3

L2 1Turn.#14 AWG. 3/8" 10. LengthPlut Leads 1"

RFC VK200 20/48. FERR0XCUBE.

MOTOROLA RF DEVICE DATA

2-101

2N6081, MRF221

FIGURE 2 20

FIGURE 3 - OUTPUT POWER versus FREQUENCY

OUTPUT POWER versus INPUT POWER

Pin-4.0 W

Vce " 1J s Vde

1*1 75 MHz

V^3J)W

\ . 2.0 W*
o
a.

5.0

LOW

12.5

" 3.0
2.0

1.0

2.0

3.0

180

Pin. INPUTPOWER (WATTS)

220

I. FREQUENCY (MHi)

FIGURE 5 - SERIES EQUIVALENT IMPEDANCE

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

Pin-3 5W
f-1 '5 MHz

fin

9.0

VCC. SUPPLY VOLTAGE (VOLTS)

Zol* = Conjugate oftheoptimum load impedance into which (hedevice output

operates at a given output power, voltage andfrequency.

MOTOROLA RF DEVICE DATA

2-102

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N6082

The RF Line
25 W - 175 MHz

RF POWER
TRANSISTOR
NPN SILICON

IMPIM SILICON RF POWER TRANSISTORS

. . . designed for 12.5 Volt VHF large-signal amplifier applications

required in commercial and industrial equipment operating to
300 MHz.

Specified 12.5 Volt, 175 MHz Characteristics Output Power = 25 W

Minimum Gain - 6.2 dB

Efficiency = 65%

STYLE 1:
PIN 1 EMITTER ,*-

2BASE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

Vceo

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

Collector Current Continuous

Total Device Dissipation @ Tc = 25C(2)

Derate above 2SC

Storage Temperature Range

f \

3. EMITTER
4. COLLECTOR

NOTES:

1. DIMENSIONING ANDT0LERANCING PER ANSI

5.0

Adc

Watts

.37

WVC

Y14.5M. 1982.

2. CONTROLLING DIMENSION: INCH.

DIM
A

Tsta

Stud TorqueO)

-65 to +200
6.5

in.ib.

C
D

Mndlcatos JEDEC Rogistorod Data for 2N6082.

(l)For Repeated Assembly Uta 5 In. lb.

(2)Thesodevicataredotlgned for RF oparation. Tho total dovico distipotionrating opplioi

only when tho devices era oporatod uRF amplifiers.

MILLIMETERS
MIN
MAX
940
978
813
8.38
1702
2007
546

1.7S

J
X

008

12.45
1.40

1.78
45'NOM

M
P

597

018

INCHES
MIN
MAX
0370

0330

0670

0790
0235

0.215

0070
0003

0.490

0055

0070
45 NOM

7.59

4.01

452

0.158

211
249

254

0083

0178
0100

335

0098

0.132

0299

CASE 145A-09

2-103

0007

1.27
780

MOTOROLA RF DEVICE DATA

03S5

0320

0050
0307

2N6082

ELECTRICAL CHARACTERISTICS(TC 25C unlettotherwito noted).

Characteristic

Symbol |

Min

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CE0

V(BR)CES

V(BR)EBO

4.0

(lC- 100mAdc, Ib"0)

Collector-Emitter Breakdown Voltage

(lc-1SmAdc, VB-0)
Emitter-Bate Breakdown Voltage

(lE-5.0 mAdc, lC-0)

"CES

Collector Cutoff Current

(Vce " 15Vdc. VflE - 0.Tp 55C

*CBO

Collector Cutoff Current

(Vcb 16 Vdc. l - 0)
ON CHARACTERISTICS

hFE

DC Current Cain

<IC - 1.0 Adc, VCE 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Cob

Output Capacitance

130

(VCB - 16 Vdc,l 0. f - 0.1 MHi)

FUNCTIONAL TEST

GPE

Common-Emitter Amplifier Power Gain

'Pout- 26W. VCc" 12.5 Vdc,f- 175 MHz)

Collector Efficiency

(Pout- 25 W.VCC - 12.5 Vdc,f - 175 MHz)

Indicates JEDEC Registered Data for 2N6082.

FIGURE 1-175 MHz TEST CIRCUIT

lOOpF TfZOAnf,
I 1000 pF

"shield
LI
RF

INPUT'

0*1
!C2

CI 2 34

u c*

r^C~
^lOOpf

RFC-< TKIOOpF

5.0-80pF ARCO 462

"{.1 SlfirjhtW.rt.lUAWG. 1-3/8" Long

I Turn.#14 AWG.3/8" ID.LtnglhPluiLmJj =1"

RFC VK20O-20/4B. FEHROXCUBE.

MOTOROLA RF DEVICE DATA

2-104

2N6082

FIGURE 2 - OUTPUT POWER versus INPUT POWER

FIGURE 3 - OUTPUT POWER versus SUPPLY VOLTAGE

25 MH

150 m

175 MHz

Pi 6.0V
= 1751AHi
225 MHi

I 20
&
3
O

IC-12

2.0

4.0

6.0

8.0

5.0

6.0

7.0

Pin. INPUTPOWER(WATTS)

8.0

9.0

VCC. SUPPLY VOLTAGE (VOLTS)

FIGURE 4 -SERIES EQUIVALENT IMPEDANCE

Zql* = Conjugate oftheoptimum load impedance into which thedevice output

operates at a givenoutputpower, voltage andfrequency.

MOTOROLA RF DEVICE DATA

2-105

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N6083

The RF Line
30 W -

175 MHz

RF POWER
TRANSISTOR
NPN SILICON

NPN SILICON RF POWER TRANSISTORS

. . . designed for 12.5 Volt VHF large-signal amplifier applications

required in commercial and industrial equipment operating to
300 MHz.

Specified 12.5 Volt, 175 MHz Characteristics Output Power = 30 W

Minimum Gain 5.7 dB

Efficiency = 65%

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

VcEO

Vdc

Collector-Base Voltage

VcbO

Vdc

Emitter-Base Voltage

vebo

4.0

Vdc

Collector Current Continuous

S.O

Adc

Total Device Dissipation @ Tc = 25C(2)

Watts
VWC

Rating

.37

Derate above 25C

Storage Temperature Range

Stud Torqued)

Tsta

STYLEV.
PIN 1 EMITTER
2. BASE
1 EMITTER
4. COLLECTOR

NOTES:
1 DIMENSIONING AND TOLERANDNGPERANSI
V14.5M. 1982.
2 CONTROLLING DIMENSION:INCH.

DIM
A

MOUMETERS
M
MAX
940
978

MAX

0370
0.320

0.385
0330

-65 to +200

813

8.38

1702

2007

6.5

in.lb.

5.46

557

E
K

1.78
008
12.45

1.(0

Indicates JEOEC Registered Data for 2N6083.

(l)For Repeated Assembly Ute 6 in. tb.

(2)Tho devices ere designed tor RF operation. The total device dissipation rating applies
only whon the devices are operated as RF amplifiers.

0.18

1.78
tS-KOW

M
P

7.59

1.27
7.80

S
T

4.01

4.52

2.11

249

INCHES

0670

0790

0.215

0235

0070
0.003

0.490

2-106

0070
0055
45-NOM

0050

0.299

0-307

2.54

0158
0.083

0.100

3 35

0093

0132

CASE 145A-09

MOTOROLA RF DEVICE DATA

0007

0.178

2N6083

'ELECTRICAL CHARACTERISTICS (Tc 25Cunless otherwise noted.)

J Symbol I

Characteristic

Miri

TypT

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

v<BR)CEO

V(BR)CES

V(BR)EB0

4.0

Vdc

(IC= lOOmAdc. IB = 0)
Collector-Emitter Breakdown Voltage

(IC = 15 mAdc, VBe = 0)

Emitter-Bass Breakdown Voltage

(IE-5.0 mAdc, lc-0)

Collector Cutoff Current

CES

(VCE " 15 Vdc,VBE - 0, TC +55C)

Collector Cutoff Current

'CBO

(VCB = 15 Vdc, lE = 0)

mAdc

1.0

mAdc

ON CHARACTERISTICS
DC Current Gain

5.0

hFE

<lc - 1-0 Adc, VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

110

130

<VCB = 15 Vdc, lE = 0, f - 0.1 MHz)

FUNCTIONAL TEST

Common-Emitter Amplifier Power Gain

5.7

<pout = 30 W, VCC = 12.5 Vdc, f = 175 MHz)

Collector Efficiency

(Pout * 30 W, Vcc " 12.5 Vdc, f =175 MHz)

Indicates JEDEC Registered Data for 2N6083.

FIGURE 1 -

175 MHz TEST CIRCUIT

llf ^TNO.IpF^fs

lflFC

I 1000 pF

Rf .
INPUT'

LI
-rww

Q*l
:C2

SHIELD

C4j

RFC* TfelOOpF

="01.2,3.4 5.0-80pF ARCO 462

LI StratghlWits.#14 AWG. 1-3/8" Long

7p 100 pF / n C3

L2 1Turn.#14 AWG. 3/B" 10. LengthPlusLestlf 1"

RFC VK200-20/48. FERROXCUBE.

MOTOROLA RF DEVICE DATA

2-107

2N6083

FIGURE 3 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 2 - OUTPUT POWER versus INPUT POWER

25 MH

ISO Ml

fir 6.0 V

175 MH/

175 AHz
225 MHz

:c = i2

2.0

4.0

6.0

8.0

5.0

6.0

7.0

8.0

9.0

VCC. SUPPLY VOLTAGE (VOLTS)

Pin. INPUTPOWER(WATTS)

FIGURE 4 - SERIES EQUIVALENT IMPEDANCE

,ao*<-c^

trmmw rr.-tt&x
Zqi' = Conjugate oftheoptimum load impedance into which thedevice output
operates at a given output power, voltage andfrequency.

MOTOROLA RF DEVICE DATA

2-108

MOTOROLA

SEMICONDUCTOR

2N6084
MRF224

TECHNICAL DATA

The RF Line
40 W -

175 MHz

RF POWER
TRANSISTORS
NPN SILICON

NPN SILICON RF POWER TRANSISTORS

. . . designed for 12.5 Volt VHF large-signal amplifier applications

2N6084

1 [

f"J

required in commercial and industrial equipment operating to

300 MHz.

Specified 12.5 Volt. 175

MHz Characteristics -

Output Power = 40 W

STYll I
m i [unci
>ua
lfKTTEi
ICOUKTW

Minimum Gain = 4.5 dB

Efficiency = 70%

NOTES
i {WCiisKNSuioiOUui<CM:rtau
I14SK 1J

; COKTaOUMj DMNSON ACn

Mtwrttn
0M

i ku

1.1

i n i obs

ll | 0W>

DO)

in
on
DCS

Oil

oil i i w
no i in

00)0 ; -

ta
a-WH

CASE 145A-09

KM*
m,

| in

oon
ont
itn 1 I0 1 IDS
s-wh

1 OBO

on) i ox)

im 1 nil

in 1 mil*

ow>

) I tea i tin

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

Rating

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

vEB0

4.0

Vdc

Collector Current Continuous

7.0

Adc

Total Device Dissipation @ Tc = 25C(2)

80
.46

Watts
W/C

-65 to +200

6.S

in.lb.

Derate above 25C

MRF224

JTYUt
Hll [MCTTtK
iwnw

ICOUiCTOK

Storage Temperature Range

Tsta

Stud TorquelD

wns

i omis&mc uo touuhciw n*
USITUSM iw
1 CmtWUNCOWNSKM MCH

'Indicates JEOEC Registered Data for 2N6084.

(DFor Repeated Assembly Use S In. lb.

(2)These dovlees are designed for RF operation. T
only whon tho devices are oporated as RF ampl

he total devic e dissipation ra ting

applies

SLJHM I KU I m* ttuj

pi 1 m lnwl iim

fieri.

pT;
w
J.I WHJ14-!"-!--,

'
in I )) I tnTT oi
Ml
-is.LjM4.m4ja. I
Ht j IW j 00B j OIQS J
i t I 1H'
)ii , ; out up ;

CASE 211-07

MOTOROLA RF DEVICE DATA

2-109

2N6084, MRF224
'ELECTRICAL CHARACTERISTICS (Tc - 25Cunless otherwise noted).

Characteristic

Symbol |

Min

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Hc 100mAdc, lB - 0)

V(BR)CEO

V(BR)CES

V(BR)EBO

4.0

Collector-Emitter Breakdown Voltage

(lc - 20 mAdc, VBE= 0)

Emitter-Base Breakdown Voltage

(lE - 10 mAdc, lc- 0)

Collector Cutoff Current

'CES

(VCE 15 Vdc,VBE - 0, TC- +55C)

Collector Cutoff Current

'CBO

<VCB-15Vdc.lE = 0)

Vdc

2.5

mAdc

ON CHARACTERISTICS
DC Current Gain

5.0

"FE

(IC - 1.0 Adc, VCE- 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

170

200

(VCB - 15 Vdc, lE - 0, f 0.1 MHz)

FUNCTIONAL TEST

Common-Emitter Amplifier Power Gain

GpE

4.5
-

(Pout" 40 W. VCC 12.5 Vdc, f = 175 MHz)

Collector Efficiency

lpout"40w. VCC 12.5 Vdc, f= 175 MHz)

Indicates JE DEC Registered Data for 2N6084.

FIGURE 1 - 175 MHz TEST CIRCUIT

loo<jF ;;o.iif;

I 1000 pF
_L

SHIELD

LI
RF
.
INPUT'

\M.

Q*-r
:C2

RFC-< TfelOOpF

C1.2.3.4 5.&80pF ARC0462

LI StrightWin).#14AWG. 1-3/8" Long

noopF

L2 1 Turn.#14 AWG. 3/8" ID. LengthPlusLenls = 1"

RFC VK20020/4B.FERROXCUBE.

MOTOROLA RF DEVICE DATA

2-110

2N6084, MRF224

FIGURE 2 -

OUTPUT POWER versus INPUT POWER

50 MH

FIGURE 3 -

OUTPUT POWER versus SUPPLY VOLTAGE

175 MHi

Pin" 14W
'200M \x

I SO

1 175 MH;

o
a.

Vc : i2.i Vdc

6.0

8.0

30
20

5.0

6.0

7.0

Pin. INPUTPOWER(WATTS)

8.0

9.0

VCC.SUPPLY VOLTAGE (VOLTS)

FIGURE 4 - SERIES EQUIVALENT IMPEDANCE

' Zql* = Conjugate oftheoptimum load impedance into which the device output
operates at a given output power, voltage andfrequency.

MOTOROLA RF DEVICE DATA

2-111

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N6166

The RF Line
100 WATTS -

150 MHz

RF POWER
TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON

... designed for VHF power amplifier applications in military and in

dustrial equipment. Particularly suited for use in Class AB, B, or C
amplifier applications to 200 MHz

Specified 28-Volt, 150-MHz Characteristics Output Power = 100 Watts

Minimum Gain = 6.0 dB

Efficiency = 60%

Specified 13.5-Volt, 150 MHz Characteristics Output Power = 30 Watts

Minimum Gain - 4.5 dB

Parallel Impedance Characterization

MAXIMUM RATINGS
Rating

Symbol

Collector-Emitter Voltage

vCEO

Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous

Total Device Dissipation @Tc =25CI1)

Vdc

VcbO

Vdc

vEBO
c

4.0

Vdc

9.0

Adc

117

Watts

0.667

W/C

-66 to +150

Tstg

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Unit

Derate above 25C

Storage Temperature Range

Value

Symbol

Max

Unit

9jC

1.5

C/W

Indicates JEDEC Registered Data.

2. BASE
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND T0LERANCINGPER
ANSI Y14.5M. 1932.
2. CONTROLLING DIMENSION:INCH.
MULMETERS
MAX

DM
A

MH
24.39

B
C
0
E
H

11.92
5.82
2.16
2.14

(UThis device Is detignod for RF operation.

INCHES
WtN

0.960

0.993

12.95

0.465

0510

693

0.229

0-275

3.93

0.085
0.084

0.155
0.110
0.178
0.007

366

2.79
4.52

0.06

0.17

K
M

17.78
4S*N0M

Q
R
U

2.93
6.23
18.29

3JO

647
1854

0.144
0.003
0.700

2-112

45*N0M
0.130
0255
0.245
0.730
0.720
0.115

CASE 211-10

MOTOROLA RF DEVICE DATA

MAX

25.14

The total dovlce dissipation rating applies

only when the device is operated as an RF amplifier.

STYLE 1:
PIN 1. EMITTER

8WWG

2N6166
ELECTRICAL CHARACTERISTICS (Tc = 25C unlessotherwisenoted)

Characteristic

Symbol

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BH)CEO

V(BR)CES

v(BR)EB0

4.0

Vdc

He3 200mAdc, Ib =0)

Collector-Emitter Breakdown Voltage

Vdc
-

(lC 200 mAdc, VB = 0)

Emitter-Base Breakdown Voltage

Vdc

(Ip. 10mAdc, lc" 0)

Collector Cutoff Current

'CES

5.0

mAdc

3.0

mAdc

(Vce 30 Vdc,VBE = 0, TC = 55C)

Collector Cutoff Current

'CBO

(VCB = 30Vdc, lE0)

ON CHARACTERISTICS
DC Current Gain

hFE

5.0

He ' 500 mAdc. VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

C0b

130

(Vcb - 28 Vdc, Ig = 0, f = 1.0 MHz)

FUNCTIONAL TEST

Common-Emitter Amplifier Power Gain

Gpe

6.0

GpE

4.5

(P out " 100 W, Vce " 28 Vdc,

lC (Max) = 5.95 Adc, f = 150 MHz)
Common-Emitter Amplifier Power Gain

lpout 30W, VCC - 13.5 V, f = 150 MHz)

Collector Efficiency

(Pout = 100VV,Vcc = 28Vdc.

Iq (Max) = 5.95 Adc, f 150 MHz)
Indicates JEDEC Registered Data.

FIGURE 1 -

150 MHz TEST CIRCUIT

Z~C7 ~IC8 ^C9 ZpCIO

28 Vdc

-<-

>r
qa*y
cb

RF
OUTPUT

LI 114" #16 AWG.Straight

L2 #16 AWGp-V^->V(^-DIAi4"
CI. C6 2.7-30 pF, Arco 461 or Equivalent
C2,C5 9.0-180pF. Area 463 or Equivalent
C3 100 pF Underwood
C4 25 pF Underwood
C7 0.01 /if Ceramic Disc

VJ L_

I ^1I *" h

L3 1/8" WideCopper Strap

C8 0.1 uF Ceramic Disc

C9 2400 pF Button
CIO 5.0uF/50V

RFC 0.15 pH J.W.Miller

BEAD: FERR0XCUBE 56-590 65 3B

MOTOROLA RF DEVICE DATA

2-113

-j % j-j" y

2N6166

OUTPUT POWER versus FREQUENCY

FIGURE 2 - VCc - 28 Vdc

FIGURE 3-VCc 13.5 Vdc

25 W

Pin = ow

N20W'S

...

15w"^
40

^OIV
2.5 W

125

ISO

175

125

150

I, FREQUENCY (MHz)

FIGURE 4 -

175

I. FREQUENCY (MHz)

OUTPUT POWER versus INPUT POWER

FIGURE 5 - OUTPUT POWER versus SUPPLY VOLTAGE

120

Pi.20W

I* 150 MHz
28 Vdc 1-151 MHz

g 100

100

VCC 13.5 V

10W

o? 40

Pin. INPUTPOWER (WATTS)

FIGURE G- PARALLEL EQUIVALENT t^i'-T RESISTANCE

versus FREQUENCY
8.0

1
Pout"

VCC.SUPPLYVOLTAGE(VOLTS)

100 W

B4.0
_, <

125

150

175

(.FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-114

2N6166

FIGURE 7 - PARALLEL EQUIVALENT INPUT CAPACITANCE

versus FREQUENCY

-Vcc-

Pout"

5$"?
5 -400
3

m ^ -600
< 5
-800

150

(.FREQUENCY (MHz)

FIGURE 8 -

PARALLEL EQUIVALENT OUTPUT CAPACITANCE

versus FREQUENCY
160

1
Vcc - 28 Vdc
Pouf

00 W

juj120
ai-

os
"<

uj< 80
J

340
0

150

I. FREQUENCY(MHz)

MOTOROLA RF DEVICE DATA

2-115

MOTOROLA

SEMICONDUCTOR

2N6304
2N6305

TECHNICAL DATA

The RF Line
1.4 GHz @ 10 mAdc - 2N6304

1.2 GHz @ 10 mAdc - 2N6305

NPN SILICON HIGH-FREQUENCY TRANSISTORS

HIGH FREQUENCY
TRANSISTORS

... designed for use as low-noise, high-gain, general-purpose amplifiers.

NPN SILICON

High Current-Gain - Bandwidth Product

fT = 1.4 GHz (Min) @ lc = 10 mAdc - 2N6304

= 1.2 GHz (Min) @ Iq = 10 mAdc - 2N6305

Low Noise Figure

NF 4.5 dB (Max) @ f = 450 MHz - 2N6304

High Power Gain

= 5.5 dB (Max) @ f = 450 MHz - 2N6305

Gpe= 15 dB (Min) @f = 450 MHz - 2N6304

= 12 dB (Min) @ f = 450 MHz - 2N6305

'MAXIMUM RATINGS
Rating
Collector-Emitter Voltege

Symbol

Value

Unit

VCEO

Vdc

1.0 to 20 mAdc

Collector-Base Voltage

vCBO

Emitter-Base Voltage

VEBO

3.0

Vdc

mAdc

Collector Current

Continuous

Total Continuous Device Dissipation

@TA-25C
Derate above 25C
Storage Temperature Range

Tstg

200

1.14

mW/C
C

-65 to +200

'Indicates JEDEC Registered Data.

FIGURE 1 - TEST CIRCUIT FOR NOISE FIGURE AND POWER GAIN
STYLE 10

C2 -A
03 5.0 V
V*

PW1. EMITTER

2 BASE
3COLLECTOR
4 CASE

V*S^

R5.05on; r *~*

NOTE:All RULESAND NOTESASSOCIATED WITHTOR

OUTLINESHALL APPLY.
MCHES

UUKETHS

Ctptcfcoct valuesin pF

I
1-

SOt)

<68k

MAX

531

0209

0233

B
C
0
E

452
432

5W
495

0178
0170

0195

11.12-Silvn-pitted bas rod, 1.1/2" Ionian) 1/4" dia. Install

el last 1/2" from nearest vertical chassis surface.

13 - 1/2 turn f 18 AWG win. located 1/4" from and

parallelto 12.
* - External tnttrtetd shield to isolate collector lead from
emitter and boa leads.

Ntutratuation Procedure:

(A) Connect450-MHz signalgenerator (with Rs 50 ohms)

to input terminalsof impiifitr.
(S) tonneci50^mRFmltaietSfKrosoulputtcrminals

Apply VE. >ndwith signalgenerator adjustedfor 5 mV

output fromamplifier, tune CI. C3.<ndC4foe

G
H
J

maximum output.
Interchange connectionsto signalgenerator and

RF vofttnetcr.

Withsufficientsignal applied to output terminate of

amplifitr.adiiHtC2lor minimumindicationat Input.

N
P

Repeatsteps (A). (81. and (CI to determine if retiming

isnectsstry.

of amplifier.

0.41

041

533

0.53
075
048
1.17
122

2-116

0016

0019

O.10OBSC
OOtf
owe

0035
0028

0.500

0.250

45' esc
1.27BSC

0210

002!

0030

2 54 BSC
091
071
12.70
35

1 1.27

45'BSC
o.05o esc

CASE 20-03
TO-206AF

(TO-72)

MOTOROLA RF DEVICE DATA

0016

1 0050

2N6304, 2N6305
'ELECTRICAL CHARACTERISTICS (Tt\ = 25 C unless otherwise noted)
Symbol

Characteristic

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CE0

V(BR)CBO

V(BR)EB0

Vdc

(IC =5X)mAdc, Ib=0)

Collector-Base Breakdown Voltage

Vdc

C"0.1 mAdc, Ie0)

Emitter-Base Breakdown Voltage

Vdc

(lE-0.1 mAdc, lC" 01

Collector Cutoff Current

"CBO

nAdc

(Vcb " 5.0 Vdc, Ie - 0)

ON CHARACTERISTICS
DC Current Gain

hFE

1400

250

(lC " 2j0 mAdc, Vqe " 5.0 Vdc)

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product

2N6304

(lC = 10 mAdc, Vce 5.0 Vdc, f -100 MHz)

2N6305

MHz

1200

Ccb

Collector-Base Capacitance

1.0

(VCB - 10 Vdc, lE 0, f - 1.0 MHz)

Small-Signal Current Gain

hfe

250

(lC 2J0 mAdc, Vce " 50 Vdc. f - 1D kHz)

Collector-Base Time Constant

2N6304

2.0

'b'Cc

(IE * 2.0 mAdc, Vcb 5-0 Vdc, f = 31.8 MHz) 2N6305

12
-

2.0

Noise Figure

(lC " 2X1 mAdc, Vce 50 Vdc, R5 50ohms,

f - 450 MHz)

2N6304

(Figure 1)

2N6305

45
55

FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain

I Uc - 20 mAdc, Vce"5.0Vdc, f 450 MHz)

1 (Finureli

Gpe

2N6304
2N6305

15
12

'Indicates JEOEC Registered Data.

FIGURE 2 - COLLECTOR-BASE CAPACITANCE
versus COLLECTOR BASE VOLTAGE

2.0

Z I*

1.6

1.4

j
2

1-2

1.0
0.8

? 0.6
i

0.4

I *
"

n
0.2

1.0

2.0

S.0

VCB.COLLECTOR-BASE VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-117

2N6304, 2N6305

FIGURE 3 - CURRENT-GAIN-BANDWIDTH

FIGURE 4 - COLLECTOR-BASE TIME

PRODUCT versus COLLECTOR CURRENT

CONSTANT versus EMITTER CURRENT

Z3UU

2250

V(,E 10 Vdc

2000

^v-

-"""vr-P- 5.0Vdc

_ 1750

VCB 5.0 Vd

| 1500
1250

750

500
,

250
5.0

1.0

2.0

3.0

lc. COLLECTOR CURRENT (mAdcl

FIGURES -

5.0

IE. EMITTERCURRENT(mAdc)

REVERSE TRANSFER

FIGURE 6 - INPUT ADMITTANCE

versus FREQUENCY

ADMITTANCE versus FREQUENCY

Vje " 5.0Vdc

lC-2 .QmAdc

1 90 Vce'5. J Vdc
IC-2-

/
f

jl>i*
"ibre
V

-grt

100

150

200

300

400

500

BOO

800 1000

ISO

200

300

400

500

600 700 800

1000

f. FREQUENCY (MHi)

1, FREQUENCY (MHz)

FIGURE 8 - FORWARD TRANSFER

ADMITTANCE versus FREQUENCY

FIGURE 7 -OUTPUT ADMITTANCE

versus FREQUENCY
20

Vce * s-Vdc
18

lr 2.0 mAdc

Jf.

VCE-UIVdc
I f 2- )mAdc_

14
12
s

-i t>fe

bJJ

\*e^

S
m

400

500 600 700 800 1000

(.FREQUENCY (MHz)

400
I. FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-118

500

GOO 700 800 1000

2N6304, 2N6305
FIGURE9 -Sn.lNPUTREFLECTION

FIGURE 10 - S22. OUTPUT REFLECTION

COEFFICIENT

-10_

-20_

-30f

150

160

170

180 -170

-160"

-150s

150"

FIGURE 11 -S!2. REVERSE TRANSMISSION COEFFICIENT

20
10
0
-10
-20
:-"-V^^^;:-:i::::--^: M

-30
! '

ISO"

170"

180

-170

-160

FIGURE 12 - S21. FORWARD TRANSMISSION COEFFICIENT

-10

-20

150

"tftttffOH
/...''.
160

no0""

;..-''"

-30

400

i40ot".;'-;'/''--

-150

. -':i "

-f70" ~-160""-150

160

MOTOROLA RF DEVICE DATA

2-119

170"

180

-170

-160

-150

2N6304, 2N6305

FIGURE 13-S-m. INPUT REFLECTION COEFFICIENT AND S22.

OUTPUT REFLECTION COEFFICIENT

MOTOROLA RF DEVICE DATA

2-120

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N6439

The RF Line
60 W - 225-400 MHz

CONTROLLED "Q"
BROADBAND RF POWER
TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

... designed primarily for wideband large-signal output amplifier

stages in the 225-400 MHz frequency range.

NPN SILICON

Guaranteed Performance in 225-400 MHz Broadband Amplifier

@ 28 Vdc

Output Power = 60 Watts over 225-400 MHz Band

Minimum Gain = 7.8 dB @ 400 MHz

Built-in Matching Network for Broadband Operation Using

Double Match Technique

100% Tested for Load Mismatch at all Phase Angles

with 30:1 VSWR

Gold Metallization System for High Reliability Applications

tIT

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

Vebo

4.0

Vdc

146

Watts

0.83

W/C

Tstg

-65 to +200

Symbol

Max

Unit

RflJC

1.2

C/W

Total Device Dissipation @Tc 25C

(11

Derate above 25C

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

STYLE 1:

PIN1. EMITTER
2.C01LECT0H
3 EMITTER
4 BASE
NOTE:

FLANGE IS ISOLATED IN ALLSTYLES

DIM

(1) These devices are designed for RF ope ration. The total
only when the devices are operated as RF amplif ere.
* Indicates JEDEC Registered Data.

device c

ssipation rating applies

KUMETERS
MIN
MAX
25.14
2433
12 45
1295
597
7
533
558

MAX

0993
0510
0300
0220

0490

023$

2.16

304

SOS
1829
0.10
1029

533

0.210
0.0S5
0203

18.54

0.720

0730

0006
0.440

381
N

WO KES

KIN
0960

381
2.92
305
1194

0.15

0004

11.17

0.405

40$

0150

0160

431

0.150

0170

3.30

0.115

0130

3.30
1257

0.120
0470

0.130

CASE 316-01

MOTOROLA RF DEVICE DATA

2-121

0120

0210

0495

2N6439

ELECTRICAL CHARACTERISTICS (Tc = 25Cunless otherwise noted)

Characteristics

Symbol

Typ

Max

Unit

OFF. CHARACTERISTICS

Collector-Emitter Breakdown Voltage

<IC" 50 mAdc, Ifj-0)

Collector-Emitter Breakdown Voltage

(lC 50 mAdc, Vbe - 0)

Emitter-Base Breakdown Voltage

(IE - 5.0 mAdc, lc - 0)

Collector Cutoff Current

V(BR)CE0

V(BR)CES

V(BR)EBO

4.0

'CBO

(VcB30Vdc, Ie-0)

Vdc

2.0

mAdc

ON CHARACTERISTICS
DC Current Gain

"FE

100

(lC 1.0 Adc, Vce - 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

C0b

(VCB= 28 Vdc, l - 0, f = 1.0 MHz)

BROADBAND FUNCTIONAL TESTS (Figure 6)
Common-Emitter Amplifier Power Gain

Gpe

7.8

8.5

(Vce 28 Vdc, Pout - 60 W,f 225-400 MHz)

Electrical Ruggedness

No Degradation in Pout

(Pout = 60 W. VCc = 28 Vdc, f - 400 MHz,VSWR 30:1

all phase angles)

NARROW BAND FUNCTIONAL TESTS (Figure 1)

Common-Emitter Amplifier Power Gain

Gpe

7.8

(Vce - 28 Vdc, Pout - 60 W, f - 400 MHz)

Collector Efficiency

Vce - 28 Vdc, Pout 60 W, f - 400 MHz)

' Indicates JEDEC Registered Data.

FIGURE 1 -400 MHz TEST AMPLIFIER (NARROW BAND)

X"
L1

J<
-^

C2 5

,n
C9;kci07p;
1
VCC - 28 V

MOTOROLA RF DEVICE DATA

2-122

C1-C4, C11
CS-C8

4-40pF
33 pF

1000 pF

C10

S.OuF

ri
LI. L2

is n
3/16" x 1" Coppor Strap

I.SuH

10UH

1 Turn #16 AWG, 5/16" I.D.

2N6439

NARROW BAND DATA

FIGURE 2 - Pout versus FREQUENCY

100

FIGURE 3 -

OUTPUT POWER versus INPUT POWER

120

vCcr 28Y

225 MHz

Pin-8.0 W
1

VCC

6.0 W

28 V

400 MHz

1 60

4.0 W

| 40

3
a

-S 40

2.0 W

20
300

350

ft
2.0

4.0

6.0

1, FREQUENCY (MHz)

FIGURE 4 -

FIGURE S -

POWER-GAIN versus FREQUENCY

8.0

Pin. INPUT POWER (WATTS)

OUTPUT POWER versus SUPPLY VOLTAGE

ICO

pout = 60W
Vce = 28V

j? 80

1 400 MHz

_Pjn - 5.0 W_

4.0 W
3

3
O

9.0

- 20
.

300

350

400

450

I. FREQUENCY (MHz)

FIGURE 6 OUTPUT POWER versus SUPPLY VOLTAGE

100

1-225 MHz

Pin" 6.0

60
4 .OW

f 40
3

a? 20

VCC. SUPPLY VOLTAGE (VOLTS)

_ _

VCC. SUPPLY VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-123

2N6439
FIGURE 7 225-400 MHz BROADBAND TEST CIRCUIT SCHEMATIC

" L""hQ<
^/^"\[io"n Li

Board Material 0.031" Thick TofIon-Fiberglass

68 pF

C2. C4, C8. CIO

C3, CB. C11
C6, C7

27 pF
IOpF

T1.T2

51 pF

Ftl

Farrlto Bead Choke, Forroxcubo VK200 19/4B

Farroxcube S6-590-65/4B Ferrlto Bead

25 Ohmi (UT25) Miniature Coaxial Cable. 1 turn

11 n, 1 W

20 n, 1/4 W
10 Turns, #22 AWG, 1/8" I.D.

C12

1-10PFJOHANSON
100 PF

C13, CIS
C14.C16

680 PF
1.0 (IF, 35 V Tantalum

C17

0.1 uF, ERIE Red Cap

4 Turni, #16 AWG. 1/4" I.D.

6 Turns. #24 AWG. 1/8" I.D.'

1" x 0.25" Microstrip Lino

L4, L5

BROADBAND DATA (Circuit. Figure 7)

FIGURE 8 POWER GAIN versus FREQUENCY

FIGURE 9 -

EFFICIENCY versus FREQUENCY

too

Pout
"Vce

60VV
28 \ 1

2 6.0

2.0

Pou 60 H
VCc - 28 If

1 |
250

300

350

250

I, FREQUENCY (MHz)

FIGURE 10 -

300

(.FREQUENCY (MHz)

INPUT VSWR versus FREQUENCY

FIGURE 11 -

SERIES EQUIVALENT INPUT-OUTPUT IMPEDANCE

6.0

5.0

Pou ,60 W
~~vc ;-28 V

>
3

I 3.0
Zqi.'=Conjugtte eltheoptimum lozd impedance
into which the device output operates at a

2.0

givenoutputpower,voltageendfrequency.

225
275
350
400

450

1.0

250

300

350

I. FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-124

0.7 + JI.6 2.2-J1.8

0.9 + J2.2 2.1 -(0.9
2.2 + J2.1 2.1-J0.1
U + jO.6 2.0 (02
0.5 + J1.S 1.9 + J0.9

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N6603

The RF Line
NF = [email protected]

HIGH FREQUENCY
TRANSISTOR
NPN SILICON

NPN SILICON HIGH FREQUENCY TRANSISTOR

... designed for use in high-gain, low-noise, small signal, narrow and wideband
amplifiers. Ideal for use in microstrip thin and thick film applications.

Low Noise Figure

NF = 2.0 dB (Typ) @ f = 1.0 GHz
= 2.9dB(Typ)@f = 2.0GHz

High Power Gain

MAG = 17 dB (Typ) @ f = 1.0 GHz
= 11dB(Typ)@f = 2.0GHz

Ion Implantation and Gold Metallization

Metal/Ceramic Hermetic Package

JAN. JTX, JTXV Available

MAXIMUM RATINGS (TA= 25C Free Air Temperature)

Rating

Symbol

Value

Unit

VCEO
vCBO
vEBO

Vdc

3.0

Vdc

Collector CurrentContinuous

mAdc

Total Device Dissipation @> Tc * 125C

Collector-Emitter Voltage
Collector-Bese Voltage
Emitter-Base Voltage

Derate Above 100C

Storage Temperature Range

400

5.33

mW/C

-65 to +200

iAr
Cx
STYLE1:
PIN1.
2.
3
4.

'Indicates JEOEC Registered Data

COLlEaOR
EMITTER
8ASE
EMITTER

NOTE:
1. DIMENSION "K" APPLIESTO AIL LEADS
2. DIRECTION OF 45* CUTON PIN 11S VENDOR
OPTION.

089

140

INCHES
MAX
0105
0035
OOSS

0.41

061

0016

0024

MRFS01

- 4 Lead Plastic Macro-T Case 302-01

089

- 100 mil Metal/Ceramic Case 303-01

003
4.45

109
015

003$

M R F302

0003

00O
0.036

684

0.175

0230

MRF904

- T0-72

Specification and Package Options

Devices using the same die type as the 2N6603:

MILUMETEBS
MAX

DIM

MIN

2.29

267

0090

MMBR901 - MiniBloc Plastic (SOT-231 TO-236

MRFC901 -UnencapsulatedChip

CASE 303-01

MOTOROLA RF DEVICE DATA

2-125

2N6603
ELECTRICAL CHARACTERISTICS <TA - 25Cunless otherwise noted)
Symbol

Min

V(BR)CEO

Vdc

V(BR)CBO

Vdc

V(BR)EB0

3.0

Characteristtc

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC 1.0 mAdc, lB=0)

Collector-Base Breakdown Voltage

(lC - 0.1 mAdc, Ig - 0)

Emitter-Base Breakdown Voltage

(IE -0.1 mAdc, lc-0)

Collector Cutoff Current

'CBO

(VCB-15Vdc, Ie-0)

Vdc

nAdc

0.75

2.5

ON CHARACTERISTICS
OC Current Gain

"FE

Ccb

0.25

Common-Emitter Amplifier Power Gain

Gpe

(VCE - 10 Vdc, lc - 15 mA, f - 1.0 GHz-Figure 2)

Spot Noise Figure (R$ Optimum-Figure 2)
(VCE " 10 Vdc, lc = 5.0 mA, f - 1.0 GHz)

1.0

Qnf

0C - 15 mAdc, VCE - 10 Vdc)

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance (1)

VCB " 10 Vdc, Ig - 0,0.1 MHz < f < 1.0 MHz)

FUNCTIONAL TEST

Power Gain at Optimum Noise Figure

(VCE - 10 Vdc. lc - 5.0 mA. f - 1.0 GHz)

TYPICAL 2 GHz PERFORMANCE

Maximum Available Gain (Figure2) '2)

MAG

(VCE 10 Vdc. IC = 15 mA. f - 2.0 GHz)

Noise Figure (R OptimumFigure2)
IVCe " 10 Vdc. lc - 5.0 mA. f - 2.0 GHz)

2.9

'Indicates JEOEC Registered Data.

(1)

Ccb measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to

the guard terminal of the bridge.

(2)

MAG is calculated from the S-Parameters using the equation MAG

IS21I2
(1-ISn|2)(1-|S22l2)

FIGURE 1 - BLOCK DIAGRAM FOR POWER GAIN AND NOISE FIGURE

Signal
RF Power Gain

Gonerator

VBE
Etta*

Jl
*"?

^^F

Bias

Microlab/FXRSF31

Tee

Double Slug Turtsrs

W
wh_

or Equivalent

> 3dB

Ailtoch Model 75
Noise Diode

Automatic NF
Meter or

Equivalent

MOTOROLA RF DEVICE DATA

2-126

2N6603
FIGURE 3 - OUTPUT CAPACITANCE versus VOLTAGE

FIGURE 2 - POWER GAIN AND NOISE FIGURE

versus FREQUENCY

VCE- OV

!C IS mA
S 2
o

I"2

Cob

5 2

J AG

0.50
Ccb

3I
.NF

I'L
0.1

0.2

5 mA)-

Ccb

MILSTO 7503 Method 3241)

Cob

MILSTO 7508 Method 3238)

0.3

2.0

4.0

6.0

1
8.0

VCB, COLLECTOR-BASE VOLTAGE (Vdc)

FREQUENCY (GHi)

FIGURE 4 - CURRENT GAIN-BANDWIDTH PRODUCT

FIGURE 5 - POWER GAIN versus COLLECTOR CURRENT

versus COLLECTOR CURRENT

6.0

MAG

B2H2

TE ST-'Ol;z
vc E-10V

5 10

f-1.0 GHz

vCE-tov

lC,COLLECTOR CURRENT (mA)

FIGURE 6 -

NOISE FIGURE versus COLLECTOR CURRENT

5.0

4.0

IC.COLLECTOR CURRENT (mA)

.01 Hi

vc :*1 DV

lC.COLLECTOR CURRENT (mA)

MOTOROLA RF DEVICE DATA

2-127

2N6603
COMMON EMITTER SCATTERING PARAMETERS
FIGURE 7 - INPUT AND OUTPUT REFLECTION

FIGURE 8 - FORWARD AND REVERSE TRANSMISSION

COEFFICIENTS versus FREQUENCY

~S2t

1200^

'v'iuN
150/

^^^^SO0

"""T3 S|2??'2J)GHi\

STV^A \ 30

0.5

o.?V

JUmH \ \ \ \ \ I
w ora; oMfoxej o.oa i r

-t50Y

-jrs//~M

-Uff^*-90

VCE-10V.lc-15mA.
S - PARAMETERS

VCE

Frequency

(Volts)

(mA)

(MHz)

IS11I

IS21I

L<t>

IS12I

IS22I

5.0

100

0.69

-30

12.16

160

0.026

03S

-16

S21

S22

SI 2

200

0.65

-61

11.03

143

0.046

034

-31

500

-122

7:05

111

0.074

0.56

-54

1000

0.63
0.64

-168

4.13

0.087

0.39

-68

2000

0.65

170

2.14

0.107

0.33

-91

100

032

-SO

18.74

154

0.022

031

-22

200

054

-92

1553

135

0337

0.74

-40

500

0.62

-146

8.49

104

0.052

0.43

-62

1000

0.65

-172

4.66

0.065

059

-75

2000

0.67

162

2.38

0.094

0.26

-97

100

0.42

-70

22.72

150

0.019

037

-26
-44

200

0.51

-113

17.72

130

0.030

0.68

500

0.63

-157

836

100

0342

0.38

-64

1000

0.66

-178

430

0356

-75

2000

0.69

159

2.43

0390

056
0.24

100

0.39

-.116

2437

142

0.014

030

-29

200

0.55

-145

17.17

120

0.021

0.58

-42

0.67

-97

-171

736

0.030

0.34

-49

1000

0.69

175

4.18

0.047

059

-56

2000

0.71

157

2.13

0.084

0.29

-81

100

0.71

-27

1231

161

0.021

036

-13

500

S11

200

0.67

-55

11.10

145

0.039

037

-25

500

0.63

-115

7.44

114

0.064

0.62

-44

1000
2000

0.64

-153

4.43

0.077

0.46

-55

0.64

172

257

0.094

0.39

-76

100

0.55

-43

18.77

155

0318

032

-18

200

0.55

-83

1630

137

0331

0.78

-32

500

0.60

-140

936

0.046

0.49

-48

1000

0.63

5.02

0.058

0.36

-56

2000

0.65

-168
164

106
85

2.55

0.084

0.33

-76

100

0.46

-60

23.14

152

0.016

030

-21

200

031

-103

1839

131

0327

0.72

-36

500

0.61

-152

937

102

0337

0.43

-49

1000

0.64

-175

551

0.049

0.33

-54

2000

0.66

161

2.61

0.079

0.31

-74

100

0.39

-98

27.29

144

0.013

033

-24

200

053

-135

19.38

122

0.019

0.63

-35

500

0.64

-167

0327

0.41

-39

1000

0.66

177

9.11
4.77

0.042

036

-45

2000

0.69

157

2.41

0.074

0.35

-67

MOTOROLA RF DEVICE DATA

2-128

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N6604

The RF Line

NF 2.7 dB@ 1.0 GHz

HIGH FREQUENCY
TRANSISTOR
NPN SILICON

NPN SILICON HIGH FREQUENCY TRANSISTOR

... designed for use in high-frequency, low-noise, small-signal,

narrow and wideband amplifiers. Ideal for use in microstrip thin
and thick film applications.

Low Noise Figure - NF = 2.7 dB (Typ) @ f = 1.0 GHz

High PowerGain - G-j(max) = 16 dB (Typ)@f = 1.0 GHz

High Current Specified Performance @ lc a 30 mA

Ion Implantation and Gold Metallization

Metal/Ceramic Hermetic Package

JAN, JTXV Available

MAXIMUM RATINGS (Ta 2SOC Free Air Temperature)

Symbol

Value

Unit

VceO
VCBO
vEBO

Vdc

3.0

Vdc

Collector CurrentContinuous

mAdc

Total Device Dissipation @Tq - 125C

Rating

Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage

Derate Above 75C

Storage Temperature Range

Tstg

500

636

mW/C

-65 to +200

~iAr
STYLE1:
PIN 1.
2.
3.
4.

'Indicates JEDEC Registered Data.

COLLECTOR
EMITTER
BASE
EMITTER

NOTE:

1. DIMENSION"*"APPLIES TOAll LEAOS.

2. DIRECTION OF45*CUTON PIN11S VENDOR
OPTION.

Specifications and Package Options

Devices using the same die type as the 2N6604:

MIN

- 4 Lead Plastic Macro-T Case 302-01

223

MRF914

- TO-72

C
0

049
041
089
0.08

MM8R930 -

MiniBloc Plastic (SOT-23) TO-236

3 Lead Plastic Macro-T Case 302A-01

J
K

BFR91

BFRC91

- Unencapsulated Chip

140

INCHES
MAX
MIN
0105
0090
0055
0035

061

0016

MtLUMETERS
MAX

MRF911

4.45

267

0035

0043

0003

584

0.175

0006
0.230

CASE 303-01

MOTOROLA RF DEVICE DATA

2-129

0024

1.09
0.15

2N6604
ELECTRICAL CHARACTERISTICS (TA - 25C unless otherwise noted)

Symbol |

Characteristic

Min

Typ

'OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC-IX) mAdc, Ib=0>

Collector-Base Breakdown Voltage
(IC-0.1 mAdc, lr;=0)
Emitter-Base Breakdown Voltege

(Ir; -0.1 mAdc, lc =0)

Collector Cutoff Current

V(BR)CEO

V(BR)CB0

V(BR)EB0

3.0

'CBO

(Vcb" 15 Vdc, Ie"0)

Vdc

nAdc

ON CHARACTERISTICS
DC Current Gain

200

"FE

(lc *30mAdc, Vce 10Vdc)

'DYNAMIC CHARACTERISTICS

Collector-Base Capacitance (1)

(Vcb "10 Vdc. l = 0,0.1 MHz< f < 1.0 MHz)

Ccb

0.30

Gpe

"FUNCTIONAL TEST

Common-Emitter Amplifier Power Gain (Figure 2)

(Vce - 10 Vdc,lc 30 mAdc. f - 1.0 GHz)

Spot Noise Figure (Rj - Optimum - Figure 2)
(VCE " 10 Vdc, IC 5.0 mAdc, f - 1.0 GHz)
Power Gain at Optimum Noise Figure
(Vce - 10 Vdc, lc - 5.0 mAdc, f - 1.0 GHz)

GNF

9.0

3.0

TYPICAL 2 GHz PERFORMANCE

Maximum Unilateral Gain (Figure 2) (2)

G|j<max)

(Vce " 10 Vc*c> 'C = 3 mAdc. f = 2.0 GHz)

Noise Figure (Rg Optimum Figure 2)

4.3

(VC " 10 Vdc. lc = 5.0 mAdc. f * 2.0 GHz)

'Indicates JEDEC Registered Data.

(1) Ccb measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to
the guard terminal of the bridge.

(2) Gu(max) iscalculated from tho S-Psrometsri using thsaquation G(j(max> -

'_2V
(1-IS11|2)(1-|S22I2

FIGURE 1 - BLOCK DIAGRAM FOR POWER GAIN AND NOISE FIGURE

MOTOROLA RF DEVICE DATA

2-130

2N6604

FIGURE 2 - POWER GAIN AND NOISE FIGURE

FIGURE 3 - OUTPUT CAPACITANCE versus VOLTAGE

versus FREQUENCY
2.0

VCE- 10 V
lc-30mA

5 3

Gij(ntxx)

621I2"

^V,

Cob

4|
31

Ccb*~"

NF(lc-5mA)

Ctb(MIL STO-7503 Method 3241)

Ck (MIL STD750BMethod 323S)

0.1

0.2

0.3

0.5

1.0

2.0

4.0

S.0

8.0

VCS, COLLECTOR-BASE VOLTAGE (Vdc)

FREQUENCY (6Hz)

FIGURE 5 - POWER GAIN versus COLLECTOR CURRENT

FIGURE 4 - CURRENT GAIN-BANDWIDTH PRODUCT

versus COLLECTOR CURRENT

Gu(mtx)

IS2)l2

TES T-1.0 GHi

vce 10V

.1.0

1 1.0 GHi

vCE-10 v

!(. COLLECTOR CURRENT (mA)

lc. COLLECTOR CURRENT (mA)

FIGURE 6 - NOISE FIGURE versus COLLECTOR CURRENT

J
'

LOG u

v<:e-

5.0

lC.COLLECTOR CURRENT (mA)

MOTOROLA RF DEVICE DATA

2-131

2N6604
COMMON EMITTER SCATTERING PARAMETERS
FIGURE 7 - INPUT AND OUTPUT REFLECTION

FIGURE 8 - FORWARD AND REVERSE TRANSMISSION

COEFFICIENTS versus FREQUENCY

SO0

-1200

vce 10v. ic-m wa.

VCE 10V. Ic M mA.

S - PARAMETERS

vce

Frequency

(Volts)

(mA)

(MHz)

5j0

100

200

S21

SI 2

S22

IS11I

L<t>

IS21I

L<t>

IS12I

L<t>

IS22I

L<t>

0.72

-40

12.37

153

0.028

031

-18

-78

-32

0.65

10.38

133

0.048

0.76

500

0.61

-137

5.75

100

0.067

030

-45

1000

0.61

-168

3.13

0.082

0.41

-54

2000

0.63

161

1.58

0.112

0.41

-80

0.024

035

-27

100

0.57

-60

1934

146

200

035

-105

14.70

125

500

0.59

-155

7.12

0.051

0.37

-55

1000

0.61
0.64

-178

3.77

0.069

0.29

-62

156

1.91

0.106

0.30

-86
-39

2000
30

S11

0.038

0.64

-43

100

0.43

-111

3038

135

0.016

0.72

200

033

-145

19.35

114

0.022

0.46

-57

500

0.62

-173

8.42

0.035

0.24

-69

1000

0.63

172

4.36

0.058

0.18

-76

2000

0.67

151

2.19

0.099

0.21

-99

100

0.46

-134

32.34

129

0.013

0.64

-42

200

037

-158

19.19

110

0.018

0.40

-56

500

0.64

-178

8.13

0.031

0.22

-62

1000

0.65

170

4.17

0.053

0.19

-70

2000

0.70

150

2.10

0.092

0.22

-97

100

0.74

-36

12.34

154

0.023

0.93

-15

200

0.67

-71

10.56

135

0.040

0.81

-25

500

039

-131

6.09

102

0.058

0.57

-36

1000

038

-164

3.32

0.073

0.5O

-44

2000

0.60

164

1.67

0.098

0.49

-69

100

0.60

-52

19.75

148

0.020

0.87

-21

200

0.56

-95

15.30

127

0.032

0.69

-33

500

036

-149

0.044

0.45

-41

1000

0.58

-174

7.69
4.07

0.061

0.39

-47

-70

2000

0.61

159

2.03

0.095

0.39

100

0.44

-94

32.03

136

0.014

0.75

-31

200

030

-135

20.76

115

0.021

0.52

-41

500

037

-168

9.13

0.032

0.33

-43

1000

175

4.71

0.052

0.29

-48

2000

039
034

154

2.34

0.089

0.30

-72

100

0.44

-117

3336

129

0.012

0.68

-31

200

0.52

-150

19.94

109

0.017

0.47

-36

039

500

-174

832

0.028

1000

0.61

173

4.38

0.049

0.32

-43

2000

0.66

152

2.21

0.083

0.34

-70

MOTOROLA RF DEVICE DATA

2-132

0.34

-35

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA
The RF Line

2N6618

NPN Silicon

High Frequency Transistor

... designed for use in high-frequency, low-noise, small-signal, narrow and wideband

NPN SILICON
HIGH FREQUENCY
TRANSISTOR

amplifiers. Ideal for use in microstrip thin and thick film applications.
Low Noise Figure NF = 1.8 dB (Typ) @ f = 2 GHz
High Power Gain Ga = 12 dB (Typ) @ f = 2 GHz
Ion Implantation and Gold Metallization

NF = 2.2 dB MAX @ 2 GHz

Metal/Ceramic Hermetic Package

Capableof MIL-S-19500 and MIL-STD-750/883 Environmental and Test Requirements

MAXIMUM RATINGS (Ta = 25"CFree AirTemperature)
Rating

Symbol

Value

Unit

VcEO

Vdc

VcBO

Vdc
Vdc
mAdc

Collector-Emitter Voltage
Collector-Base Voltage

vebo

1.5

Collector Current Continuous

Total Device Dissipation C Tq = 125C

300

mW7C

Emitter-Base Voltage

Derate Above 125C

Storage Temperature Range

Junction Temperature

Lead Temperature (Soldering 10 seconds each lead)

Tstg

-65 to +200

200

250

CASE 303-01, STYLE 1

indicates JEDEC Registered Data.

ELECTRICAL CHARACTERISTICS (TA

25C unless otherwise noted)

Characteristic

Symbol

Min

V(BR)CES

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

He = 100 M, 'B - 0)

Vdc

| Collector-Base Breakdown Voltage (Vce = 10 V)

CEO

500

nAdc

Collector Cutoff Current (Vcb = 10 Vdc, l = 0)

ICBO

100

nAdc

ON CHARACTERISTICS

DC Current Gain (lc = 3 mAdc, Vce = 10 Vdc)

hFE

100

250

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance (1)

Ccb

0.14

(Vcb = io vdc, ic = o, f = i MHz)

FUNCTIONAL TEST

Common-Emitter Associated Gain

(Vce = 1 Vdc< 'C = 3 mAdc, f = 2 GHz)

Minimum Noise Figure

nfmin

1.8

2.2

(Vce = 10 Vdc, lc = 3 mAdc, f = 2 GHz)

'Indicates JEDEC Registered Data.

(1) Ccb measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the guard
terminal of the bridge.

MOTOROLA RF DEVICE DATA

2-133

2N6618

TYPICAL S-PARAMETERS
Vce = 10 V, lc = 3 mA

s1t

S21

(MHz)

Mag.

Ang.

100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
5000
6000

0.89
0.89
0.84
0.83
0.80
0.78
0.73
0.72
0.71
0.70
0.64

-17

9.30

-34

-97

0.64

Mag.

Ang.

S22

Mag.

Ang.

Mag.

Ang.

168

0.01

0.99

-6

9.05

156

0.01

0.97

-11

-50

8.78

146

0.02

0.93

-14

-63

8.12

138

0.03

0.92

-17

-76

7.39

129

0.03

0.88

-21

-87

6.83

123

0.04

0.83

-23

6.31

117

0.04

0.82

-24

-106

6.01

110

0.04

0.80

-25

-112

5.43

105

0.04

0.80

-27

-120

5.12

101

0.04

0.74

-28

-143

3.60

0.05

0.70

-34

-161

2.82

0.05

0.67

-37

0.62

-174

2.30

0.05

0.69

0.62

175

1.S0

0.06

0.70

-56

0.61

165

1.66

0.06

0.73

-68

-52

0.61

157

1.46

0.06

0.78

-70

0.62

142

1.18

0.08

0.76

-82

0.60

127

0.98

-9

0.09

0.78

-95

1
f = 2 GHz
10 V

VCF =*

VCF = 10V
"C == 3mA

3 12

~GNF"

g 3

lC, COLLECTOR CURRENT (mA)

f, FREQUENCY (GrW

Rgure 1. NFmin and Associated Gain

Rgure 2. NFmin and Associated Gain versus

versus Frequency

Collector Current

-VCE =

VCE == 3V

*vce = IV

lC, COLLECTOR CURRENT (mA)

Rgure 3. IS21I2. Insertion Gain versus Biasat 2 GHz

MOTOROLA RF DEVICE DATA

2-134

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA
The RF Line

2N6679

NPN Silicon

High Frequency Transistor

... designed for use in high-frequency, small-signal, narrow and wideband amplifiers.
Ideal for use in microstrip thin and thick film applications.

NPN SIUCON
HIGH FREQUENCY
TRANSISTOR

High Output Power Pi dB = 18-5 dBm Typ @ f = 4 GHz

High Power Gain Gj = 10.5 dB Typ @ f = 4 GHz

Gt = 10.5 dB TYP @ 4 GHz

High Current Specified Performance @ lc = 25 mA

Ion Implantation and Gold Metallization
Metal/Ceramic Hermetic Package

Capable of MIL-S-19500 and MIL-STD-750/883 Environmental and Test Requirements

MAXIMUM RATINGS (TA = 25C FreeAirTemperature)

Rating

Collector-Emitter Voltage

Symbol

Value

Unit
Vdc

VCEO

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

VEBO

1.5

Vdc
mAdc

Collector Current Continuous

Total Device Dissipation (a Tq = 87"C

900

mWVC

Tstg

-65 to +200

200

250

Derate Above 87C

Storage Temperature Range

Junction Temperature

Lead Temperature (Soldering 10 seconds each lead)

CASE 303-01, STYLE 1

'Indicates Ratings Same As or Greater Than JEDEC Registered Data.

ELECTRICAL CHARACTERISTICS (TA = 25Cunless otherwise noted)

Symbol

Min

V(BR)CES

500

nAdc

100

nAdc

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

HC = 100 uA, Vbe = 0)

' Collector-Emitter Leakage Current

'CEO

(VCE = 15 V)

Collector Cutoff Current

ICBO

(Vcb = 15 Vdc, Ie = 0)

ON CHARACTERISTICS
DC Current Gain

"FE

100

220

(lC = 15 mAdc, Vce = IS vdc'

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance (1)

Ccb

0.27

(Vcb = io vdc, ic = o, f = 1 mhz)

FUNCTIONAL TEST

Tuned Gain (2)

18.5

dBm

(Vce = 15 Vdc, lc = 25 mAdc, f = 4 GHz)

Power Output at 1 dB Compression

p1dB

(VCe = 15 Vdc, lc = 25 mA, f = 4 GHz)

'Indicates JEDEC Registered Data.

(1) Cc5 measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the guerd
terminal of the bridge.

|S21|2(1-|rsl2)(1-|'I[2)

T~|(1 -SnlsNI-S22n.)-Si2S2iiLisl2

Is " Source reflection coefficient.

fi. - Load reflection coefficient.

MOTOROLA RF DEVICE DATA

2-135

2N6679

TYPICAL S-PARAMETERS
VCE = 15 V, lc = 25 mA

811

S21

(MHz)

Pill

|S2ll

100

0.60

-76

38.6

500

0.67

-158

12.7

1000

0.68

-178

1500

0.68

170

2000

0.69

162

3.4

S
L*

S22

IS12I

L4>

IS22I

141

0.01

0.83

-20

0.02

0.50

-27

6.6

0.03

-32

0.04

53
54

0.46

4.4

0.47

-41

0.05

0.47

-50

2500

0.69

154

2.7

0.06

0.49

3000

0.69

146

2.3

0.07

0.53

-70

3500
4000
4500
5000
5500

0.69

138

1.93

0.08

0.55

-79

0.69

131

1.7

0.09

0.57

-89

0.69

123

1.5

0.10

0.59

-97

0.69

114

1.35

-9

0.12

0.62

-106

0.69

106
98

1.23

-19

0.14

0.64

-113

1.11

-28

0.15

0.68

-122

1.01

-37

0.17

0.69

-130

6000
6500

0.69
0.69

-59

"Vqe = 15V"
Iq = 25mA
S

1 = 4 GHz

Vce = uv

Pun

i 10
- IS21I2-

tlti ED

3< 8

c/>

.bt"

6
4

0.2

0.4

0.6

Rgure 1. IS21I2 and Tuned Gain

Rgure 2. Power Output at 1 dB Compression and

Small-Signal Gain versus Collector Current

versus Frequency

Vpr - IS V

^VCE

lOCOLLECTOR CURRENT (mA)

f, FREQUENCY IGH2)

^vJ?

= 5V

= 2V

lC, COLLECTOR CURRENT (mA)

Rgure3. IS21I2. Insertion Gain versusBias at 4 GHz

MOTOROLA RF DEVICE DATA

2-136

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N6985

The RF Line

NPN Silicon Push-Pull

RF Power Transistor
125 WATTS, 30-400 MHz

... designed primarily for wideband large-signal output and

driver amplifier stages in the 30-400 MHz frequency range.

CONTROLLED "Q"
BROADBAND PUSH-PULL
RF POWER TRANSISTOR
NPN SIUCON

Specified 28 Volt, 400 MHz Characteristics

Output Power = 125 W

Typical Gain = 10 dB (Class C), 11 dB (Class AB)
Efficiency = 55% (Typ)
Hermetic Package to Meet Stringent Environmental
Requirements
Built-in Input Impedance Matching Networks for Broadband
Operation
Push-Pull Configuration Reduces Even Numbered Harmonics
Gold Metallization System for High Reliability

100% Tested for Load Mismatch

CASE 382-01, STYLE 1

MIL-S-19500 Processed Versions Available as MRF6985HX,

MRF5985HXV

<1
3>
- 5 (FLANGE)

The 2N6S85 is two transistors in a single package with separate base and collector leads and emitters
common. This arrangement provides the designer with a space saving device capable of operation in a
push-pull configuration.

MAXIMUM RATINGS

Symbol

Value

Collector-Emitter Voltage

VcEO

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

Rating

Unit

vebo

Vdc

Collector Current Continuous

Adc

Total Device Dissipation @> Jq = 25C(1)

270
1.54

Watts
WVC

Tstg

-65 to +150

200

Symbol

Max

Unit

Rwc

0.65

"C/W

Derate above 25C

Storage Temperature Range

Junction Temperature
THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

(1) These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF push-pull amplifiers.
* Indicates JEDEC Registered Data.

MOTOROLA RF DEVICE DATA

2-137

2N6985

ELECTRICAL CHARACTERISTICS <TC = 25C unless otherwise noted.)

Characteristic

Symbol

Min

v<BR)CEO

Vdc

Collector-Emitter Breakdown Voltage

(lC = 50 mAdc, Vbe = 0)

V(BR)CES

Vdc

Emitter-Base Breakdown Voltage

v(BR)EBO

Vdc

Typ

Max

Unit

OFF CHARACTERISTICS (NOTE 1)

Collector-Emitter Breakdown Voltage

(lC = 50 mAdc. Iq = 0)

E = 6 mAdc, lc = 0)
Collector Cutoff Current

>CBO

(VCB = 30 Vdc, lE = 0)

mAdc

ON CHARACTERISTICS (NOTE 1)
DC Current Gain

hFE

C = 1 Adc, VCe = 5 Vdc)

100

115

DYNAMIC CHARACTERISTICS (NOTE 1)

Output Capacitance
(Vcb = 28 Vdc, l = 0. f = 1 MHz)

Cob

FUNCTKj NAL TEST (NOTE 2 See Figure 1)

Comm on-Emitter

Amplifier Power Gain

Gpe

(VCC = 28 Vdc, Pout = 125 W, f = 400 MHz)

Collector Efficiency

(Vce = 28 Vdc, Pout = 125 W. f = 400 MHz)

Load Mismatch

(VCc = 28 Vdc, Pout = 125 W, f = 400 MHz

VSWR = 30:1, all phase angles)

No Degradation in Output Power

NOTES: 1. Each transistor chip measured separately.

2. Both transistor chips operating in push-pull amplifier.

* Indicates JEDEC Registered Data.

^C16^Jci7_lci8^]ci9
C1, C2 240 pF, 100 Mil Chip Cap (ATC) or Equivalent
C3 4.7 pF, 100 Mil Chip Cap (ATC) or Equivalent
C8 12 pF, 100 Mil Chip Cap (ATC) or Equivalent
CS 27 pF, 100 Mil Chip Cap (ATC) or Equivalent
C6 20 pF, 100 Mil Chip Cap (ATC) or Equivalent
C7 12 pF, 100 Mil Chip Cap (ATC) or Equivalent
C9, C10 270 pF, 100 Mil Chip Cap (ATC)or Equivalent
C11. C12, C16, C17 470 pF 100 Mil Chip Cap (ATC) or Equivalent
C13, C18 680 pF Feedthru
C14, C19 0.1 iiF Erie Redcap or Equivalent

B1 Balun, 50 fl Semi-Rigid Coaxial Cable 86 Mil OD, 2" L

B2 Balun, SO (1 Semi-Rigtd Coaxial Cable 86 Mil OD, 2* L
Z1
Z2
Z3
Z4
Z5

CIS 20iiF,S0V

Microstrip
Microstrip
Microstrip
Microstrip
Microstrip

Line
Line
Line
Line
Line

6S0
220
280
300
450

Mil
Mil
Mil
Mil
Mil

L
L
L
L
L

x
x
x
x
x

12S
12S
12S
125
125

Mil
Mil
Mil
Mil
Mil

W
W
W
W
W

Board Material 0.06" Toflon-Fibergless, er = 2.55,

2 oz. Cu. CLAD, Double Sided

LI, L2 0.15 ftH Molded Choke With Ferrite Bead

L3,14 2-1/2 Turns #20 AWG. 0.200 ID
LS. L6 3-1/2 Turns #18 AWG, 0.200 ID

Rgure 1. 400 MHz Test Fixture

MOTOROLA RF DEVICE DATA

2-138

2N6985

OUTPUT POWER versus INPUT POWER

CLASS C

1 SoOrV Hi

225 N Hz

^lOOMKz

^ -"400 MHz

225 MHz

400 MHz

/
/
I 30 /
/,

/
/

to
0

INPUT POWER (WATTSI

INPUT POWER (WATTS)

Rgure 3. Vce = 13.5 V

Figure2. VCc = 28 V

OUTPUT POWER versus SUPPLY VOLTAGE

CLASSC
160

Pin = 10VV^,

Pin=14W
140

= 7W

S> 120

= 5W

ioo
w

I80

| 6
o

40
20
0

SUPPLY VOLTAGE (VOLTS)

Rgure 4.1 = 225 MHz

Rgure 5. f = 400 MHz

160

|^100
5

60
f = 400 M Hz
VCC = 28
>CQ = 200 mA

8 40

Figure 6. Series Equivalent Input/Output Impedance

8
10
12
14
INPUTPOWER(WATTS)

Rgure 7. Class AB Output Power versus Input Power

Input and output impedances are measured from baso to base end
collector to collector respectively.

MOTOROLA RF DEVICE DATA

2-139

2N6985

NOTE: The Printed Circuit Board shown is 75% of the original.

Figure 8. Test Circuit Photomaster

Figure 9. Test Fixture Photo

MOTOROLA RF DEVICE DATA

2-140

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

2N6986

The RF Line

NPN Silicon Push-Pull

RF Power Transistor
100 WATTS, 30-500 MHz

... designed primarily for wideband large-signal output and

driver amplifier stages in the 30-500 MHz frequency range.
Specified 28 Volt, 500 MHz Characteristics
Output Power = 100W
Typical Gain = 10.3 dB (Class AB); 9 dB (Class C)
Efficiency = 55% (Typ)

CONTROLLED "Q"
BROADBAND PUSH-PULL
RF POWER TRANSISTOR
NPNSIUCON

Built-in Input Impedance Matching Networks for Broadband

Operation

Push-Pull Configuration Reduces Even Numbered Harmonics

Go.J Metallization System for High Reliability

100% Tested for Load Mismatch

Hermetic Package to Meet Stringent Environmental

Requirements

CASE 382-01, STYLE 1

MIL-S-19500 Processed Versions Available as MRF6986HX,

MRF6986HXV

<1
3>
5 (FLANGE)

4>
<2

The 2N6386 is two transistors in a single package with separate base and collector leads and eminers
common. This arrangement provides the designer with a space saving device capable of operation in a
push-pull configuration.

MAXIMUM RATINGS

Rating

Symbol

Value

Collector-Emitter Voltage

VceO

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

Unit

vebo

Vdc

Collector Current Continuous

Adc

Tot8l Device Dissipation <&, Tq = 25X (1)

270
1.54

Watts

Tstg

-65 to +150

200

Symbol

Max

Unit

Rfwc

0.65

"C/W

Derate above 25C

Storage Temperature Range

Junction Temperature

W/C

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

1) These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF push-pull amplifiers.
* Indicates JEDEC Registered Data.

MOTOROLA RF DEVICE DATA

2-141

2N6986

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.)

Symbol

Min

Collector-Emitter Breakdown Voltage

C = 50 mAdc, lg = 0)

v(BR)CEO

Collector-Emitter Breakdown Voltage

(lC = 50 mAdc, Vbe = 0)

V(BR)CES

Vdc

Emitter-Base Breakdown Voltage

(IE = 5 mAdc, lc = 0)

V(BR)EBO

Vdc

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS (NOTE 1)

Collector Cutoff Current

'CBO

Vdc

100

115

mAdc

(Vcb = 30 Vdc, l = 0)
ON CHARACTERISTICS (NOTE 1)
DC Current Gain

hFE

dC = 1 Adc, Vce = 5 Vdc)

DYNAMIC CHARACTERISTICS (NOTE 1)

Output Capacitance

Cob

(Vcb = 28 Vdc, lE = 0, f = 1 MHz)

FUNCTIONAL TEST (NOTE 2 See Rgure 1)
Common-Emitter Amplifier Power Gain

Gpe

7.5

(Vce = 28 Vdc, Pout = 100 W, f = 500 MHz)

Collector Efficiency

(Vce = 28 Vdc, Pout = 100 W, f = 500 MHz)

Load Mismatch

<!>

(Vce = 28 Vdc, Pout = 100 W, f = 500 MHz

No Degradation in Output Power

VSWR - 30:1, all phase angles)

NOTES: 1. Each transistor chip measured separately.
2. Both transistor chips opereting in push-pull amplifier.
* Indicates JEDEC Registered Data.

CIO C11

V 1

C12

C13 C14 C15

-L

C16

L1-L2 0.15 iM Molded Choke with Ferrite Bead

L3-L4 2-1/2 Turns #20 AWG 0.200* ID
L5-L6 3-1/2 Turns #18 AWG 0.200" ID

C1, C2, C7, C8 240 pF 100 mil Chip Cap

C3 12 pF 100 mil Chip Cap
C4 10 pF 100 mil Chip Cap
CS 36 pF 100 mil Chip Cap
C6 12 pF 100 mil Chip Cap
C9, C13 1000 pF 100 mil Chip Cap
C10, C14 680 pF Feedthru Cap
C11, C15 0.1 pF Ceramic Disc Cep
C12.C16 60mF6OV

B1. B2 Balun SOO Semi Rigid Coax, 86 mil OD, 2" Long
Z1.
23.
Z5,
Z7,

Z2
24
Z6
Z8

450
340
280
600

mil Long x 125 mil W. Microstrip

mil Long x 125 mil W. Microstrip
mil Long x 125 mil W. Microstrip

mil Long x 126 mil W. Microstrip

Board Material 0.03" Teflon-Fiberglass. r = 2.55.

2 oz. Copper Clad both sides.

Rgure 1. 500 MHz Test Fixture

MOTOROLA RF DEVICE DATA

2-142

2N6986

OUTPUT POWER versus INPUT POWER

CLASSC

/100 MHz

140

| '
1100

400 MHz

'225 MHz

/
/

/tOO MHz

5> 60

***~~ 00 MHz

I40

3 40

a400MHz

2
tj 60

| 80

_225MHr

500 MHz

/
7
/,/

1vfj
6

INPUT POWER (WATTS)

Rgure 2. Vce = 28 V

Rgure 3. Vce = 13.5 V

OUTPUT POWER versus SUPPLY VOLTAGE

CLASSC
120

Pin = 10W,

120

\=n\\S

= 8W

_'00

j 100

^=6 V

'W-

^
16

SUPPLY VOLTAGE (VOLTSI

SUPPLY VOLTAGE (VOLTS)

Rgure 4. f = 225 MHz

Figure 5. f = 500 MHz

5J120

tioo
vec = 28V P0UT= 100W
fMHz
100
225
400
500

Z|N
ZOL*
0.6 + jO
7.0 - J5.2
0.5 + J2.5 4.0 - J2.8
2.4 + J6.0 2.8 - jl.2
5.6 + J5.6 2.2 - jO.4

f = 500 M to
o

vce = 28
200 mA

'CO =

: Zql* = Conjugate oftheoptimum

;.loadimpedance intowhich thedevice
i operatesata givenoutputpower, volt' age, and frequency.

INPUT POWER (WATTS)

Rgure 6. Series Equivalent Input/Output Impedance

Rgure 7. Class AB Output Power versus Input Power

Input and output impedances are measured from base to base and
collector to collector respectively.

MOTOROLA RF DEVICE DATA

2-143

2N6986

NOTE: The Printed Circuit Board shown is 75% of the original.

Figure 8. Test Circuit Photomaster

Figure 9. Test Fixture Photo

MOTOROLA RF DEVICE DATA

2-144

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

BFR90

The RF Line
fT= 5.0 GHz @ 14 mA
HIGH FREQUENCY

NPN SILICON HIGH FREQUENCY TRANSISTOR

TRANSISTOR

.. . designed primarily for use in high-gain, low-noise, small-signal

amplifiers. Also used in applications requiring fast switching times.

High Current-Gain Bandwidth Product

Low Noise Figure

NPN SILICON

fj = 5.0 GHz (Typ) @ Iq = 14 mA

NF =2.4dB (Typ) @f = 0.5 GHz
= 3.0dB (Typ) @f = 1.0 GHz

High Power Gain

Gmax = 18 dB (Typ) @ f = 0.5 GHz

= 12 dB (Typ)@f = 1.0 GHz

MAXIMUM RATINGS
Rating

Symbol

Value

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

vEBO

3.0

Vdc

mAdc

180

2.0

mW/C

Collector Current

Continuous

Total Device Dissipation @T& 60C

Derate Above 60 C
Storage Temperature Range

Tstg

Unit

65 to +150

f
L

\
( V

i* T'j

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance Junction to Ambient

Symbol

Max

Unit

R0JA

BOO

"c/w

EZ
1_H

' -T
c

STYLE2.

FIGURE 1 - POWER DERATING

PIN 1. COLLECTOR
2. EMITTER
3. BASE

NOTE.

DIMENSION D NOTAPPLICABLE INZONE N

\
100

M LUVETERS

INCHES

DIM

MAX

4.44

0.175

0.205

1.90

521
2.54

0075

0100

084

099

0033

0039

020

030

0008

0012

G
K

076
724

114

0030

0045

813

0285

0320

10S4

1143

0415

165

100

150

200

Ta. AMBIENT TEMPERATURE (C)

CASE 317A-01

MOTOROLA RF DEVICE DATA

2-145

MAX

0450
0065

BFR90

ELECTRICAL CHARACTERISTICS (Tc - 25C unless otherwise noted)

Symbol

Characteristic

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BB)CE0

Vdc

(IC-1.0 mAdc. Ib-O)

Collector-Base Breakdown Voltage

V(BR)CB0

Vdc

(IC-0.1 mAdc, l"0)

Emitter-Base Breakdown Voltage

V|BR)EBO

Vdc

(lE-0.1 mAdc,lc-0)

3.0

Collector Cutoff Current

nAdc

'CBO

<VCB-10Vdc. IE=0)

ON CHARACTERISTICS
DC Current Gain

hFE

(lC - 14 mAdc, VCe 10 Vdc)

" |

250

DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product

GHz

(lC - 14 mAdc, VCe 10 Vdc, f = 0.5 GHz)

5.0

Collector-Base Capacitance

(Vcb " 10 Vdc. IE 0, f 1.0 MHz)

0.5

1.0

FUNCTIONAL TESTS

Noise Figure

(lC 2.0 mAdc, Vce " 10 Vdc, f = 0.5 GHz)

(lC 2.0 mAdc, Vce " 10 Vdc, f = 1.0 GHz)
Power Gain at Optimum Noise Figure

2.4

3.0

Gnf

(lC 2.0 mAdc, Vce " 1 Vdc, f = 0.5 GHz)

(lC " 2.0 mAdc, Vce " 1 Vdc. f = 1.0 GHz)
Maximum Available Power Gain (1)

Gmax

(lC - 14 mAdc, VCe " 10 Vdc, f = 0.5 GHzl

(lC - 14 mAdc, VCe " 10 Vdc, f = 1.0 GHzl

IS-jsI2
(DGn

(1-lSi -i I2) (I-IS22I2'

FIGURE 2 - POWER GAIN AND NOISE

FIGURE versus FREQUENCY

VCE I0V

N^
GnMI 2.0

FIGURE 3 -

vce-to v

1 11

S^ ^Gmj, 1*mA
mA

POWER GAIN AND NOISE

FIGURE versus COLLECTOR CURRENT

s s

I "

N>,

8.0

NF 2.( mA

N>>

4.0

3.2

0.3

0.4

0.5
0.7
I. FREQUENCY (GHj)

1.0
lC. COLLECTOR CURRENT (mA)

MOTOROLA RF DEVICE DATA

2-146

BFR90
FIGUF IE4-Sn PARAMETERS

Frequency (MHz)

Vce
(Volts)

5.0

200

500

800

S11

L<t>

S11

L<t>

S11

t<t>

S11

2.0

0.77

0.48

0.33

-125

0.27

-160

0.28

170

5.0

0.52

-60

0.25

110

0.18

-150

0.18

170

0.21

145

0.33

-75

0.15

-125

0.13

-175

0.15

150

0.20

130

0.20

-95

0.12

155

0.14

165

0.17

145

0.22

130

0.17

116

0.14

-170

0.17

160

0.21

145

0.26

130

2.0

0.79

0.50

-80

0.33

-115

0.26

-150

0.25

175

5.0

0.56

0.27

-95

0.16

-135

0.13

-175

0.17

150

0.39

0.16

-105

0.10

-150

0.10

165

0.15

140

0.25

-75

0.10

-120

0.09

-175

0.12

150

0.18

130

0.25

-75

0.10

-120

0.09

-175

0.12

150

0.18

130

FIGURE 5 -

(Volts)

5.0

1500

(mA)

Frequency (MHz)

vce

1000

200

S22 PARAMETERS

500

800

1000

1500

ic
(mA)

S22

L<t>

S22

L<>

S22

Ut>

2.0

0.89

0.69

0.61

-35

0.55

-35

0.52

5.0

0.75

0.55

0.50

0.47

-30

0.43

0.64

0.49

0.45

-25

0.43

-30

0.40

-35

0.57

0.47

0.44

0.43

-25

0.40

-35

0.55

0.47

-20

0.46

-20

0.44

-25

0.42

2.0

0.91

0.74

0.66

-30

0.62

-35

0.59

-40

5.0

0.79

0.61

-25

0.56

-25

0.54

0.51

-35

0.70

0.56

0.53

0.51

-25

0.48

-35

0.63

0.54

-25

0.53

-20

0.51

-25

0.49

-35

0.63

0.56

-15

0.55

0.54

-25

0.52

-35

FIGURE 6 -S21 PARAMETERS

Frequency (MHz)

VCE
(Volts)

500

800

(mA)

S21

L<t>

S21

L4>

140

3.81

105

2.73

2.20

1.70

5.0

9.92

125

5.24

3.50

2.80

2.10

12.33

115

5.82

3.79

2.90

2.20

13.62

105

6.00

3.88

2.95

2.25

13.41

105

5.80

3.74

2.85

2.15

2.0

5.77

145

3.88

110

2.80

2.25

1.75

5.0

10.05

130

5.42

3.60

2.85

2.10

12.56

115

6.00

3.90

3.05

2.25

13.77

110

6.13

3.92

3.05

2.20

13.23

105

5.79

3.70

2.85

2.15

FIGURE 7 -Si2

(Volts)

5.0

1500

5.76

Frequency (MHz)

vce

1000

>C
2.0

5.0

200

PARAMETERS

500

800

1000

1SO0

ic
(mA)

S12

L<t

S12

L<t>

S12

L<t>

2.0

0.06

0.10

0.12

0.14

0.17

5.0

0.05

0.08

0.12

0.15

0.19

0.04

0.08

0.12

0.15

0.20

0.04

0.08

0.12

0.15

0.20

0.03

0.07

0.11

0.15

0.19

0.12

0.15

2.0

0.05

0.03

0.11

5.0

0.04

0.07

0.10

0.13

0.17

0.04

0.07

0.10

0.13

0.17

0.03

0.07

0.10

0.13

0.17

0.03

0.06

0.10

0.13

0.17

MOTOROLA RF DEVICE DATA

2-147

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

BFR91

The RF Line
fT= 5.0 GHz @ 30 mA
HIGH FREQUENCY
TRANSISTOR

NPN SILICON HIGH FREQUENCY TRANSISTOR

NPN SILICON

.. . designed primarily for use in high-gain, low-noise, small-signal

amplifiers. Also used in applications requiring fast switching times.

High Current-Gain - Bandwidth Product -

Low Noise Figure

NF = 1.9 dB (Typ) @ f = 0.5 GHz

High Power Gain -

fj = 5.0 GHz (Typ) @ Iq = 30 mA

Gmax = 16 dB (Typ) @ f = 0.5 GHz

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

vCF.O

Vdc

Collector-Base Voltage

vCBO

Vdc

vEBO

2.0

Vdc

mAdc

180

2.0

mW/'C

-65 to +150

Emitter-Base Voltage
Collector Current

Continuous

Total Device Dissipation (? TA 60C

Derate Above 60 C

Storage Temperature Range

Tstg

II
; ( >^
Jv

T
t

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance Junction to Ambient

Symbol

Max

RflJA

500

Unit

c/w

^
STYLE2

PIN1 COLLECTOR
2 EMITTER
2 BASE

FIGURE 1 -

POWER DERATING

NOTE:
DIMENSION 0 NOTAPPLICABLE INZONE N

200

INCHES

MLLIVETEP.S

ISO

100

144

153

521
254

MAX

MIN

VAX

0125 | 0205
0075

0100

0B4

099

0033

0039

0.20

090

0.008

0012

026

114

0030

0045

813

0285

0320

1143

0415

0450

n
a.

0
s

IC n

2 0

Ta. ambient TEMPERATURE ("CI

MOTOROLA RF DEVICE DATA

2-148

224
toy
_

165

CASE 317A-01

0 ::;

BFR91

ELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise notedl

Characteristic

Symbol

Typ

Min

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

V(BR)CE0

(lC" 1.0mAdc, lg = 0)

Collector-Base Breakdown Voltage

Vdc

v(BR)CBO

(IC"0.1 mAdc, lE=0)

Emitter-Base Breakdown Voltage

Vdc

v(BR)EBO

(lE -0.1 mAdc, lc = 0)

2.0

Collector Cutoff Current

nAdc

>CBO

(VCB-5.0Vdc, Ie=0)

ON CHARACTERISTICS
OC Current Gain

"FE

(lC 30 mAdc, Vce " 5.0 Vdc>

250

DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product

GHz

(lC 30 mAdc, VCg = 5.0 Vdc, f = 0.5 GHz)

5.0

Collector-Base Capacitance

ccb

(VCB - 10 Vdc, iE = 0, f - 1.0 MHz)

0.7

1.0

FUNCTIONAL TESTS

Noise Figure

(lC - 2.0 mAdc, VC = 5.0 Vdc, f - 0.5 GHz)

(lC - 2.0 mAdc, VCE 5.0 Vdc. f = 1.0 GHz)

1.9

2.5

Power Gain at Optimum Noise Figure

Gnf

(lC - 2.0 mAdc, Vce " 5.0 Vdc, f - 0.5 GHz)

(lC - 2.0 mAdc, Vce = 5.0 Vdc, f = 1.0 GHz)

8.0

Maximum Available Power Gain (1)

Gmax

(lC - 30 mAdc, Vce = 50 Vdc, f = 0.5 GHz)

(lC - 30 mAdc, Vce = 50 Vdc. f = 1.0 GHz)

d8
16

lS2il2

ID G

(l-lS1l|2)(|-|S22l2)

FIGURE 2 POWER GAIN AND NOISE

FIGURE versus FREQUENCY

FIGURE 3 - POWER GAIN AND NOISE

FIGURE versus COLLECTOR CURRENT
1
vce 5.o vdc

Or,o x

I-0.5G Hi

Gmax

.MmA

12
\

20 mA

00
0

NF 2.

N^
X

""NF

0.3

0.4

0.5

I. FREQUENCY (GHi)

lC. COLLECTOR CURRENT ItnAI

MOTOROLA RF DEVICE DATA

2-149

BFR91

FIGURE 4 - Sij PARAMETERS

Frequency (MHz)
VCE
(Volts)

5.0

1000

800

500

200

1500

"C
(mA)

S11

L<t>

S11

Lt>

S11

2.0

0.72

-65

0.51

125

0.46

-165

0.47

170

0.51

145

5.0

0.49

-90

0.35

-ISO

0.34

175

0.36

155

0.41

135

L<t>

0.34

-110

0.28

-165

0.29

165

0.32

145

0.36

130

0.26

-130

0.24

180

0.27

155

0.30

140

0.34

125

0.24

-145

0.24

175

0.27

155

0.30

140

0.34

125

2.0

0.74

-60

0.51

-120

0.45

-160

0.45

170

0.49

150

5.0

0.52

0.33

140

0.31

175

0.32

160

0.37

145

0.36

0.24

155

0.24

170

0.27

155

0.31

140

0.25

-115

0.19

-170

0.21

160

0.24

145

0.29

130

0.22

-120

0.19

-175

0.21

160

0.25

145

0.20

130

FIGURES- S22 PARAMETERS

Frequency (MHz)

vCe
(Volts)

5.0

200

1000

800

500

1600

"c
(mA)

S22

L<S>

S22

Lt>

S22

L<t>

S22

2.0

0.83

0.62

-35

0.5S

-40

0.51

-45

0.49

5.0

0.66

-30

0.45

-35

0.40

0.37

-40

0.34

0.52

-35

0.36

0.32

0.30

-35

0.27

-50

0.42

-35

0.30

-30

0.27

-30

0.26

-30

0.22

0.38

0.28

0.26

-30

0.25

0.21

-40

2.0

0.86

0.67

-30

0.62

-35

0.58

0.56

-50

5.0

0.71

0.53

0.48

-30

0.45

-35

0.43

-40

0.59

-30

0.45

0.41

-30

0.40

-30

0.37

0.50

0.40

0.38

-25

0.37

0.34

-40

0.47

0.40

0.38

-25

0.37

-30

0.34

-35

FIGURE 6 - S21 PARAMETERS

Frequency (MHz)

vce

(Volts)

(mA)

1000

800

500

1500

S21

/<*

S21

L4>

S21

L<S>

5.25

130

3.06

2.10

1.70

1.20

5.0

8.72

120

4.34

2.84

2.30

1.60

10.85

110

4.92

3.22

2.60

1.80

12.13

105

5.34

3.44

2.75

1.90

12.50

100

5.42

3.47

2.75

1.90

2.0

5.36

135

3.20

2.20

1.85

1.30

5.0

9.05

120

. 4.55

3.00

2.45

1.65

11.37

110

5.22

3.40

2.65

1.85

12.83

105

5.64

3.63

2.75

2.00

13.10

100

5.62

3.63

2.75

2.00

2.0

5.0

200

S21

FIGURE 7 - S12 PARAMETERS

Frequency (MHz)

1000

800

500

200

1500

vCe

(Volts)

(mA)

S12

L<t>

S12

L<t>

S12

Z.0

2.0

0.08

0.11

0.12

0.14

0.17

5.0

0.06

0.09

0.13

0.17

0.22

0.05

0.09

0.14

0.19

0.24

0.05

0.07

0.15

0.19

0.25

0.04

0.10

0.15

0.19

0.25

2.0

0.06

0.09

0.10

0.12

0.15

5.0

0.05

0.08

0.11

0.15

0.19

5.0

0.05

0.08

0.12

0.16

0.21

0.04

0.08

0.13

0.17

0.22

0.04

0.08

0.13

0.17

0.22

MOTOROLA RF DEVICE DATA

2-150

MOTOROLA

SEMICONDUCTOR ^mmmmmmmm

BFR92
BFR92A

TECHNICAL DATA
The RF Line

NPN Silicon

High Frequency Transistors

... designed primarily for use in high-gain, low-noise, small-signal UHF and
microwave amplifiers constructed with thick and thin-film circuits using sur

RF TRANSISTORS

face mount components.

NPN SILICON

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Co/tecror-Emiltcr Voltage

vCEO

11,

Vdc

Collector-Base Voltage

VCBO

:>o

Vdc

Emitter-Base Voltage

vEBO

2 0

Vdc

Collector Current Continuous

mAdc

Operating and Storage Junction

Temperature Range

TJ.Tstg

-55 to

( 150

THERMAL CHARACTERISTICS
Symbol

Max

Unit

350

2.8

mW C

Storage Temperature

Tstq

150

Thermal Resistance Junction to Ambient

RJA

357

c w

Characteristic

"Total Device Dissipation, Tft = 25C

Derate above 25C

CASE 318-07. STYLE 6

SOT-23
LOW PROFILE

Package mounted on 99.5% alumina 10 x 8 x 0,6 mm.

DEVICE MARKING
BFR92. T1. 12
BFR92A. T1.T2

PI
P2

ELECTRICAL CHARACTERISTICS (TA

25 C unless otherwise noted.)

Symbol

Min

Collector-Emitter Breakdown Voltage (1)

(lC = 10 mA)

v(BR)CEO

Collector-Base Breakdown Voltage

(lC = 100 mA)

v(BR)CBO

Emitter-Base Breakdown Voltage

(lC = 100 /A)

v(BR)EBO

2.0

Characteristic

Max

Unit

OFF CHARACTERISTICS

Collector Cutoff Current

BFR92

(VCB = 10 V)

!CBO

BFR92A

Vdc

ON CHARACTERISTICS

DC Current Gain

"FE

(lC = 14 mA. Vce = 10 V)

BFR92

25
-

BFR92A

Collector-Emitter Saturation Voltage (1)

dC = 25 mA. IB = 5.0 mA)

vCE(sat)

Base-Emitter Saturation Voltage (1)

vBE(sat)

(lC = 25 mA, lB 5.0 mA)

0.5

Vdc

1.2

Vdc

SMALL-SIGNAL CHARACTERISTICS

Current-Gain Bandwidth Product

(lC = 14 mA, VCe = 10 V. I

500 MHz)

Noise Figure

(VCE = 1-5V. IC - 3.0 mA. RS = 50 II. f

3.0

500 MHz)

3.0

GHz

(Typ)

Capacitance-Collector to Base

Ccb

(Vcb = 10 Vdc. f = 1.0 MHz)

0.7

(Typ)

ID Pulse Width 300 ^s, Duty Cycle - 2.0%.

MOTOROLA RF DEVICE DATA

2-151

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

BFR93

BFR93A
The RF Line

NPN Silicon

High Frequency Transistors

... designed primarily for use in high-gain, low-noise, small-signal UHF and
microwave amplifiers constructed with thick and thin-film circuits using sur

RF TRANSISTORS

face mount components.

NPN SILICON

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

vEBO

2.0

Vdc

Collector Current Continuous

mAdc

Operating and Storage Junction

Temperature Range

TJ. Tstg

-55 to * 150

Symbol

Max

Unit

350

2.8

mW C

Rating

THERMAL CHARACTERISTICS
Characteristic

Total Device Dissipation, Ta = 25"C

Derate above 25C

CASE 318-07, STYLE 6

Storage Temperature

Tstq

150

Thermal Resistance Junction to Ambient

RflJA

357

SOT-23
LOW PROFILE

Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.

DEVICE MARKING
BFR93 = R1
BFR93A = R2

ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.

Symbol

Min

Collector-Emitter Breakdown Voltage (1)

(lC = 10 mA)

v(BR)CEO

Collector-Base Breakdown Voltage

v(BR)CBO

V(BR)EBO

2.0

Characteristic

Max

Unit

OFF CHARACTERISTICS
Vdc

Vdc

(lC " 10 mAI

Emitter-Base Breakdown Voltage

(lC

Vdc

100 tiA)
"CEO

Collector Cutoff Current

(VCE = 10 V)
Collector Cutoff Current

'CBO

(Vcb = 10 V)
ON CHARACTERISTICS

"FE

DC Current Gain(l)

(lC 30 mA. Vce

dC 30 mA. Vce

5.0 V)
5.0 V)

BFR93A
BFR93

Collector-Emitter Saturation Voltage (1)

(lC

VCE(sat)

0.5

Vdc

1.2

Vdc

35 mA, lB = 7.0 mA)

Base-Emitter Saturation Voltage (1)

(lC - 35 mA, Ib

VBEIsat)

7.0 mA)

SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product

3 0

GHz

(lC = 30 mA. Vce 50 V, f - 500 MHz)

Noise Figure

(VCe

5.0 V. IC

2.0 mA. RS

50 SI.f = 30 MHz)

(II Pulse Width * 300 jis. Duty Cycle 2.0%

MOTOROLA RF DEVICE DATA

2-152

3.0

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

BFR96
BFRC96
MRF961
MRF962
MRF965

The RF Line

NPN SILICON HIGH FREQUENCY TRANSISTORS

The BFR96 series transistors use the same state-of-the-art micro

wave transistor chip which features fine-line geometry, ion-implanted

arsenic emitters and gold top metalization. These transistors are

intended for low-to-medium power amplifiers requiring high gain,

fj = 4.5 GHz @ 50 mA

low noise figure, and low intermodulation distortion. The BFR96

and MRF961 are particularly suitable for broadband MATV/CATV

amplifiers. The MRF962 uses a hermetic stripline, ceramic package

HIGH FREQUENCY

and is intended for high reliability applications up to 2 GHz. The

TRANSISTOR

MRF965 makes an excellent VHF/UHF Class C driver amplifier for

several hundred milliwatts power output.

NPN SILICON

BFRC96

a
MAXIMUM RATINGS
Ratings

BFR96

MRF961

MRF962

MRF965

Case 317A-01

Case 317-01

Case 303-01

Chip

Style 2

Style 1

Case 26-03
Style 1

Symbol

Values

Unit

Collector-Emitter Voltage

vci:o

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

vEBO

3.0

Vdc

100

mAdc

0.75

0.5

0.75

Watts

Tj - 200C

7.5

mW/C

-65 to + 150

-65 to +150

-65 to -t-200

-65 to + 200

Collector Current - Continuous

Total Device Dissipation <s> Tc !00c'' I

DerateaboveT<; 100C

Vdc

max

Storage Temperature

Tstg

*JOTE 1. Case temperature measured on colic ctor

-65 to + 200

lead im mediately

adj cent to body of package.

MOTOROLA RF DEVICE DATA

2-153

BFR96, BFRC96, MRF961, MRF962, MRF965

ELECTRICAL CHARACTERISTICS (Tc - 25C unlets otherwisenoted)

Characteristic

| Symbol |

Min

| Typ "T

V(BR)CEO

V(BR)CB0

V(BR)EB0

3.0

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

(lC- 1.0 mAdc, Ib0)

Collector-Base Breakdown Voltage

Vdc

(lC- 100pAdc, lE -01

Emitter-Base Breakdown Voltage

Vdc

(lE = lOOpAdc, lc-0)

Collector Cutoff Current

'CBO

100

nAdc

(VCB- 10 Vdc, lE-0)

ON CHARACTERISTICS

DC Current Gain

"FE

(lC SO mAdc, Vce " ,0 Vdc>

DYNAMIC CHARACTERISTICS

Current-Gain Bandwidth Product

GHz

4.5

1.2

1.5

1.6

2.0

(lC " B0 mAdc, Vce " 10 Vdc. f - 0.5 GHzl

Collector-Base Capacitance

Ccb

(Vcb * 10 Vdc. Emitter Guarded)

BFRS6. MRF981. MRFS62

MRF965

FUNCTIONAL TESTS

Noise Figure

2.0

(lc 10 mAdc, Vce " 10 Vdc, f - 0.5 GHz)

G|j(max)/

Maximum Unilateral Gain/Insertion Gain

(lC " 50 mAdc, Vce " '0 Vdc. f 0.5 GHz)

BFRS6.MRF965

IS21I2

-/12

MRF961
MRF362

14.5/13

-/13.5

17/15

-/15

20.5/165

IS21I2
NOTE1. Gu(max)|(l-ISiil2)(l-|S22l2>

FIGURE 1 -MAXIMUM UNILATERAL GAIN versus FREQUENCY

1
vc
c

<
a

FIGURE 2 - IS2112 versus FREQUENCY

*N
^

I 16
i

8.0

1 40
o

1
05

0.7

0.S

1.0

0.7

I. FREQUENCY (GHt)

MOTOROLA RF DEVICE DATA

2-154

1.0

BFR96, BFRC96, MRF961, MRF962, MRF965

FIGURE 3 - MAXIMUM UNILATERAL GAIN versus

FIGURE 4 - GAIN-BANDWIDTH PRODUCT versus

COLLECTOR CURRENT

I
MRFSS2

VCE'I0V

vce- 5.0 V

/
vce

BFRS6.MRFS6S

BFRS6Str

^^*~

tov

lC.COLLECTOR CURRENT (mA)

lc. COLLECTOR CURRENT (mA|

FIGURE 6 - NOISE FIGURE versus COLLECTOR CURRENT

FIGURE 5 - NOISE FIGURE versus FREQUENCY

vce-

1 OS GHi
-"

VCE to V

3.0

y
^
2.0

ic
0.1

0.2

10 niA

0.3
I. FREQUENCY IGHr)

0.5

lC.COLLECTOR CURRENT (mAI

FIGURE 7 - COLLECTOR-BASE CAPACITANCE versus

FIGURE 8 - OUTPUT POWER AND EFFICIENCY

COLLECTOR-BASE VOLTAGE

versus INPUT POWER (MRF965)

5 4.0

3.0

2.0

^J
\

pmii.

1 M0 MHj

80?

400

SttFi gur(9

^" RF9

soj

& 1.0
BF R96. MRF 961.1 (RFS .2

2.0

6.0

Vce. COLLECTOR BASE VOLTAGE (Vdcl

Ptn. INPUT POWER (mW)

FIGURE 9 - MRF965 CLASS C AMPLIFIER @ 500 MHz, 400 mW

Vce

LI - Copper Strip; 1/4" Wide X 1" Long

10pF

X 0.008" Thick

L2-3/4", #18 AWG

L3 - 2 Turni. #18 AWG, 1/4" ID

0.1 MF _[T

Button ^P

(3-30) pF - Arco 19A115282 1

or equivalent
(1 -10) pF Johonton Piston

(3-30)pF

<3-30)pF

Trimmer or oquivatent
Bead -

tt (1- 10) pF

(3-30) pF

MOTOROLA RF DEVICE DATA

2-155

Indiana General #56-590-65

BFR96, BFRC96, MRF961, MRF962, MRF965

BFR96 COMMON-EMITTER S-PARAMETERS

INPUT/OUTPUT REFLECTION

FORWARD/REVERSE TRANSMISSION

COEFFICIENTS versus FREQUENCY

(VCE - 10 V. IC = 50 mA)

(VCE 10 V, lc - 50 mA|

|S0

vce

(Volts)

(mA)

(MHz)

lll

IS21I

LC-

IS12I

lSjl

5.0

100

0.51

-95

15.04

121

0.047

0.58

-48

Sll

S21

S22

S12

300

0.43

-163

5.87

0.082

500

0.46

174

3.61

0.120

0.19

-63

700

0.48

162

2.65

0.161

0.15

-64

0.26

-63

1000

0.48

146

1.92

0.220

0.12

-79

1500

0.54

121

1.40

0.320

0.13

-118

100

0.39

-122

19.41

112

0.037

0.42

-68

300

0.39

-176

6.81

0.079

0.16

-94

500

0.42

166

4.11

0.129

0.10

-103

700

0.44

156

3.05

0.176

0.06

-119

1000

0.44

142

2.20

0.244

0.06

-159

1500

0.49

118

1.62

0.348

0.10

177

100

0.35

-140

21.10

106

0.032

0.33

-81

300

0.38

176

7.11

0.081

0.13

-116

500

0.42

162

4.28

0.133

0.09

-136

0.07

-163

700

0.43

153

3.16

0.183

1000

0.42

140

2.28

0.252

0.08

165

1500

0.47

116

1.66

0.357

0.12

155

0.039

100

0.53

-83

15.96

124

0.65

-36

300

0.38

-154

6.44

0.070

0.35

-41

500

0.41

-179

3.98

0.102

0.30

-39

700

0.42

166

2.94

0.138

0.27

-39

1000

0.42

151

2.12

0.191

0.24

-47

1500

0.49

125

1.50

0.278

0.22

-72

100

0.38

-104

20.85

115

0.032

0.48

-48

300

0.32

-169

7.54

0.070

0.23

-48

500

0.35

170

4.61

0.109

0.19

-43

700

0.37

160

3.37

0.152

0.16

-39

1000

0.37

146

2.43

0.210

0.13

-44

1500

0.43

121

1.73

0.304

0.10

-74

100

0.33

-119

22.59

109

0.029

0.39

-51

300

0.30

-176

7.74

0.069

0.19

-47

500

0.34

166

4.70

0.113

0.16

-40

700

0.36

158

3.45

0.156

0.14

-35

1000

0.36

144

2.46

0.217

0.11

-39

1500

0.42

119

1.75

0.310

0.08

-72

MOTOROLA RF DEVICE DATA

2-156

BFR96, BFRC96, MRF961, MRF962, MRF965

MRF961 COMMON-EMITTER SPARAMETERS

INPUT/OUTPUT REFLECTION
COEFFICIENTS versus FREQUENCY

FORWARD/REVERSE TRANSMISSION

(VCe = 10 V. lc = 50mA)

(VCE - 10 V, lc = 50mA)

vce

(Volls)

(mA)

(MHz)

5.0

S 11

Sl2

S22

I-;*

S21

Sl2

..'.''

s22

100

0.65

-101

16.61

125

0.047

0.61

-56

300

0.64

-160

6.61

0.064

0.27

-87

500

0.66

-178

4.01

0.078

0.19

-98

700

0.68

171

2.93

0.093

0.16

-108

1000

0.68

160

2.07

0.119

0.16

-124

0.72

143

1.43

0.158

0.21

-141

100

0.60

-129

22.41

115

0.034

0.49

-84

0.63

-172

7.94

0.049

0.26

0.66

174

4.78

0.071

0.21

100

0.67

166

3.45

0.092

0.20

0.67

156

2.46

0.124

0.21

0.71

140

1.73

0.173

0.24

0.59

-147

25.12

109

0.025

0.42

0.64

-178

8.47

0.046

0.28

0.67

171

5.05

0.070

0.26

0.68

s 1

500

COEFFICIENTS versus FREQUENCY

100

164

3.67

0.093

0.67

154

2.60

0.128

0.72

138

1.83

0.178

0.65

-90

0.26

17.47

128

0.040

0.67

0.61

-154

7.31

0.057

0.33

0.62

-174

4.46

0.069

0.25

0.64

175

3.27

0.084

0.22

0.64

163

2.33

0.106

0.20

0.69

145

1.56

0.140

022

0.51

0.57

-116

24.36

119

0.030

0.58

-167

8.10

0.045

0.61

178

5.43

0.070

0.14

0.63

169

3.93

0.084

0.10

0.62

159

2.78

0.112

0.67

142

1.91

0.156

0.55

-132

26.97

112

0.024

0.57

-173

0.20

0.12

9.32

0.042

0.60

174

5.58

0.064

0.11

0.62

167

4.04

0.086

0.08

0.61

158

2.85

0.08

141

1.96

0.12

0.115

0.158

MOTOROLA RF DEVICE DATA

2-157

175

-140

-158

BFR96, BFRC96, MRF961, MRF962, MRF965

MRF962COMMON-EMITTER SPARAMETERS
INPUT/OUTPUT REFLECTION
COEFFICIENTS versus FREQUENCY

ORWARD/REVERSE TRANSMISSION
COEFFICIENTS versus FREQUENCY

(VCE-10V, lc-50mA)

(VCe - 10 V, lC" 50 mA)

vCE

(Volts)

(mA)

(MHz)

ISnl

IS2il

S12

IS22I

5.0

100

0.70

-102

17.42

128

0.044

0.65

-57

Sil

S21

S12

S22

300

0.75

-156

7.11

0.058

0.32

-97

500

0.78

-170

4.36

0.064

0.26

-110

700

0.78

-176

3.16

0.071

0.23

-117

1000

0.78

176

2.26

0.078

0.24

-126

1500

0.79

167

1.51

0.092

0.31

-133

100

0.69

-131

24.24

118

0.029

0.56

-87

300

0.77

-167

8.76

0.039

0.35

-137

500

0.79

-176

5.26

0.046

0.32

-150

700

0.80

178

3.82

0.055

0.31

-158

1000

0.79

173

2.72

0.067

0.32

-164

1500

0.81

164

1.82

0.086

0.34

-167

100

0.71

-147

27.72

113

0.021

0.53

-107

300

0.78

-173

9.59

0.030

0.41

-152

500

0.81

179

5.72

0.038

0.39

-163

700

0.81

176

4.09

0.048

0.38

-169

1000

0.81

171

2.89

0.061

0.38

-175

1500

0.82

163

1.96

0.082

0.40

-177

100

0.71

-92

18.77

131

0.037

0.70

-44

-69

300

0.74

-150

8.09

100

0.051

0.34

500

0.75

-166

5.01

0.056

0.27

-75

700

0.76

-174

3.62

0.064

0.24

-79

1000

0.76

179

2.58

0.071

0.24

-88

1500

0.77

168

1.72

0.085

0.31

-104

100

0.67

-120

27.10

122

0.027

0.57

-68

300

0.73

-163

10.27

0.035

0.27

-110

500

0.76

-174

6.21

0.043

0.22

-124

700

0.77

-179

4.48

0.051

0.20

-132

1000

0.77

175

3.19

0.062

0.20

-139

1500

0.78

166

2.13

0.080

0.25

-142

100

0.68

-137

31.53

116

0.020

0.49

-85

300

0.74

-169

11.17

0.028

0.27

-131

500

0.77

-177

6.69

0.037

0.24

-144

700

0.77

178

4.82

0.047

0.23

-152

1000

0.77

173

3.42

0.059

0.23

-158

1500

0.79

165

2.30

0.078

0.27

-159

MOTOROLA RF DEVICE DATA

2-158

BFR96, BFRC96, MRF961, MRF962, MRF965

MRFS65COMMON-EMITTER SPARAMETERS

COEFFICIENTS versus FREQUENCY

FORWARD/REVERSE TRANSMISSION
COEFFICIENTS versus FREQUENCY

IVCE-10V, lc =50mAI

(VCE 10 V, lc 50 mA)

INPUT/OUTPUT REFLECTION

VCE

1(Volts)

/ 5.0

S22

(MHz)

ISnl

18211

IS12I

|S22I

100

0.56

-102

13.87

121

0.054

0.58

-62

~T0

S12

S21

300

0.57

-158

5.47

0.084

0.32

-94

500

0.56

-169

3.40

0.110

0.27

-106

700

0.52

178

2.53

0.136

0.39

-115

1000

0.55
0.54

167

1.79

0.181

0.35

-112

150

1.27

0.242

0.43.

-122

100

0.48

-129

17.61

112

0.041

0.47

-85

300
500

0.55

-169

6.38

0.076

0.30

-J25

1500

Sll

'C
(mA)

0.54

-176

3.97

0.111

0.27

700

0.50

172

2.94

0.114

0.30

-143

1000

0.53

162

2.08

0.198

0.32

-135

1500

0.50

146

1.50

0.267

0.37

-140

100

0.47

-144

19.34

107

0.035

0.42

300

0.55

-173

6.72

0.073

0.31

-138

500

0.53

-179

4.17

0.112

0.29

-ISO
-153

-138

-100

700

0.50

168

3.10

0.147

0.33

1000

0.53

159

2.19

0.206

0.32

-146

1500

0.50

143

1.59

0.277

0.36

-149

100

0.56

-92

14.67

123

0.047

0.63

-50

300

0.53

-152

6.00

0.077

0.34

-73

500

0.53

-165

3.74

0.100

0.29

-82

0.124

0.31

-93

700

0.49

-177

2.76

1000

0.52

170

1.96

0.166

0.38

-94

1500

0.51

153

1.36

0.221

0.46

-108

100

0.46

-117

19.10

115

0.49

0.50

-164

7.09

0.036
0.071

300

0.26

-99

500

0.49

-172

4.39

0.102

0.23

-110

700

0.45

175

3.25

0.133

0.25

-119

1000

0.49

164

2.28

0.181

0.30

-112

1500

0.47

148

1.61

0.246

0.37

-120

-68

100

0.42

-131

20.99

110

0.033

0.41

-79

300

0.49

-169

7.46

0.069

0.24

-111

500

0.48

700

-175

4.63

0.103

0.21

-123

0.45

172

3.40

0.136

0.25

-129

1000

0.48

162

2.39

0.188

0.29

-119

1500

0.45

146

1.70

0.251

0.35

-126

MOTOROLA RF DEVICE DATA

2-159

BFR96, BFRC96, MRF961, MRF962, MRF965

BFRC96 CHIP TOPOGRAPHY

Nominal Chip Size; 0.014" X 0.016" X 0.005'

Prom r.v:.iii.-jtion. Gold
Back MoialiJation: Gold

Emitier/Base Bond Pad: 2.8 mil Dia.

=Emitlor Fingers: 10

= Baso Fingors: 1 1
Emitter Diffusion: lonlmplantod Arsenic

MOTOROLA RF DEVICE DATA

2-160

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

BFW92A

The RF Line
fT = 4.5 GHz@ 10 mA
HIGH FREQUENCY

NPN SILICON HIGH FREQUENCY TRANSISTOR

TRANSISTOR
. . designed primarily for use in MATV I CATV amplifiers and other
broadband linear applications demanding high power gain with low

NPN SILICON

noise over a wide current range.

High Power Gain

MAG = 1 6 dB (Typ) @ f = 0.5 GHz

Low Noise Figure

NF = 2.7 dB (Typ) @ f = 0:5 GHz

Ion-Implanted Arsenic Emitters

Gold Top Metal

Silicon Nitride Passivation

Industry Standard Plastic Macro-T Package

Compatible with Other BFW92 Types

L
D

; (

MAXIMUM RATINGS
Rating

Collector-Emitter Voltage

Symbol

Value

Unit

VCEO

Vdc
Vdc

Collector-Base Voltage

vCBO

Emitter-Base Voltage

vlB0

Vdc

Collector-Current Continuous

mAdc

Total Device Dissipation (Si Tc = 105C

180

4.0

mW"=C

-65 to 150

Derate Above 105C

Storage Temperature Range

Tstg

H
K

71*
,'
u l_J
_ .
c

STYLE2;

PIN1 COLLECTOR

THERMAL CHARACTERISTICS

2. EMITTER

Characteristic

Thermal Resistance Junction to Case (2)

Symbol

Max

Unit

RJC

250

C/W

3 BASE

\:-e

NSIOND NOT APPLICABLE IN ZONE

Note Case temperature measured on collector lead

Immediately adjacent to body ol package

; MILLIMETERS
DIM
A
C

INCKES

MIN ' MAX

MIN

444

521

D175

0 205

1.90

2.54

a o;5

0100

2-161

MAX

084

099

3033

020

030

0008

OCT?

G
X

076

1.14

0030

0 04S

;:;

813

I
N

10.54

1143

165

0415
_

CASE 317A-01

MOTOROLA RF DEVICE DATA

0 C33

3 32:
0450

LP 065

BFW92A
ELECTRICAL CHARACTERISTICS |TC =2SC unless otherwise noted)

| Characteristic

Symbol "J"

Min

Typ

Max

UnlC

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(IC= 1.0 mAdc. Ib = 0)
Collector-Base Breakdown Voltage

(IC=0.1 mAdc. lg = 0)
Emitter-Base Breakdown Voltage
(l = 0.1 mAdc. lc =0)
Collector Cutoff Current

V{BR)CE0

V{BH)CB0

v(BR)EB0

2.5

'CBO

(VCB=10 Vdc, 'E = 0)

Vdc

nAdc

ON CHARACTERISTICS
DC Current Gain

"FE

150

(lC = 2.0 mAdc, Vce : 1.0 Vdc)

DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product

GHz

flC = 10 mAdc. Vce = 10 Vdc. f = 0.5 GHz)

Collector-Base Capacitance
(Vcb = 10 Vdc. f = 1.0 MHz, Emitter Guarded)

Ccb

0.5

1.0

FUNCTIONAL PERFORMANCE

Optimum Noise Figure (Tuned)

NFop,

(lC = 10 mAdc, Vce = 10 Vdc. f = 0.5 GHz)

Noise Figure (Untuned. R5 = RL= 50 11)
dC = 10 mAdc. Vce = 10 Vdc. f = 0.5 GHz)
Maximum Available Gain (1)

2.7

3.0

MAG

dC = 10 mAdc. Vce = 10 Vdc. f = 0.5 GHz)

Insertion Gain

IS21I2

dC = 10 mAdc, Vce = 10 Vdc. f = 0.5 GHz)

<1>Gr,

IS21I2

(HSn|2)(HS22l2>

FIGURE 1 30-900 MHz BROADBAND AMPLIFIER

1.1 k

-0+24V

-wv-

r1
-pC4
-pC5
-4-O.luF

io.1 uF

3 3^"

0.1 pF

<RL =75n
vCe = iov
lC = 10 mA

RS = 75 n
IC2

(3-10) pF
C3. C4. C5 0.1 fiF Chip Capacitor

LI. L2 3.3 iH Molded Inductor

All Resistors 1 /4 W. 20%

MOTOROLA RF DEVICE DATA

2-162

o
3)

Sro

II o

o
<

T <:

rf. GAIN-BANDWIDTH PRODUCT (GHz)

MAG. MAXIMUM AVAILABLE GAIN (dB)

N
o

o
c
o

- o

o
-t

o
o>

-< ***

J
i

s
SI

/
/
/

f>J

|S2il2. INSERTION GAIN (dB)

MAG. MAXIMUM AVAILABLE GAIN (dB)

S c

-1

3
>

> +

^0 |

, -n

et < 3

?*r 3

1
'

Is >

"5"

Pout- OUTPUT POWER (dBm)

c
II rri
-

GP. POWER GAIN (dB)

BFW92A

FIGURE 8 NOISE FIGURE

FIGURE 9 - NOISE FIGURE

versus COLLECTOR CURRENT

Untuned. Rg =RL =SO (I

101

-1 = 1.0(>Hi-

_ 4.0

^-'-

t = 0.5 BKl

3.0

S3
o

2.0

vce

= 10 Vdc

vce = 10 Vdc
2.0

a
o

1.0

5.0

lC.COLLECTOR CURRENT (mA|

It COLLECTOR CURRENT |mA)

FIGURE 11 FIGURE 10 -

NOISE FIGURE versus FREQUENCY

Untuned Rs = Rl = so f*

5.0

vce = 10 Vdc

| 30

3.0

lC = 5.0 mA

= 10 Vdc

= 50 nA
o

2 0

z
z

0.2

0.3

0 5

0 7

0.2

0.3

0 5

I. FREQUENCY (GHi)

I. FREQUENCY |GHi|

FIGURE 12 - Cjb INPUTCAPACITANCE versus

FIGURE 13 - COLLECTOR-BASE CAPACITANCE

versus COLLECTOR-BASE VOLTAGE

EMITTER BASE VOLTAGE

_ 20

J 1.5
u

2 i.o
<
u

c()0

3
tt.

A 0.5
c b

0.5

1.0

1.5

2.0

2.5

2.0

4.0

6.0

8.0

Vcb- COLLECTOR-BASE VOLTAGE (Vdc)

VBE. 8ASE-EMM1TTER VOLTAGE (Vdc)

MOTOROLA RF DEVICE DATA

2-164

BFW92A
BFW92A COMMON-EMITTER SPARAMETERS
INPUT/OUTPUT REFLECTION

FORWARD/REVERSE TRANSMISSION

COEFFICIENTS versus FREQUENCY

(Vce =10 V. lc = 10mA)

(Vce = 10 V. lc=10mA)

Coordinates in Ohms

-|50

-30

Si 1

S22

Sl2

S21

VCE

(Volts)

(mA)

(MHz)

isni

IS21I

IS12l

IS221

5.0

100
200
500
800
1000
100
200
500
800
1000
100
200
500
800
1000
100
200
500
800
1000
100
200
500
800
1000
100
200
500
800
1000
100
200
500
800
1000
100
200
500
800

0.71
0.49
0.21
0.17
0.16
0.52
0.31
0.14
0.15
0.16

-33
-60
-119
-161
176
-46
-75
-150
173
154

11.2

145

122
92
78
71

69
62
61
60
60
67
65
67
65
64

0.87
0.70
0.48
0.44
0.44

-18
-26
-30
-36
-40

0.40
0.22
0.14
0 16
0.17
0.33
018
014
0.17
0.18
0.27
0.15
0.16
0.19
0.20
0.73
0.53
0.21
0.14
0.11
0.57
0.35
0.12
0.09
0.09
0.46
026
0.09
009
010
0.39
021
008
010
0.11
0.34
0 17
0.08

-55
-88
-170
161
145

0 031
0.052
0.094
0.137
0 164
0.027
0.044
0.089
0.135
0.164
0.025
0.041
0.087
0.134
0.164
0.023
0.039
0.086
0 133
0.164
0.022
0038
0.085
0.132
0.163
0.026
0.044
0.082
0.120
0.143
0.023
0.038
0078
0.118
0.144
0.021
0.035
0.076
0117

078
0.58
0.40
0.37
0.37
0.72
0.52
0.36
0.34
0.35
0.68
049
035
0.33
0.34
0.65
0.47
0.35
0.33
0.33
0.90
0.75
0.57
0.53
0.53
0.82
0.65
0.50
0.47
0.48
0.77
060
0.47
0.45
046

-23
-29
-29
-34
-38
-26
-29
-27
-33
-37
-27
-28
-26
-32
-37
-27
-27
-25
-31
-36

5.0

1000

100
200
500
800
1000
100
200
500
800
1000

Oil

0.13

-62
-99
178
155
142
-69
-111

172
153
140
-30
-52
-98
-136
-161
-39
-62
-117
-163

168
-46
-68
-137
177
153
-50
-73
-154
168
148
-54
-79
-166
162
144

30
25
166
11.2
5.2
3.3
2.8
19.7
12.1
54
35
2 9
21 1
125
55
35
29
21.9
12.7
5.5
35
2.9
11.1
8.8
4.7

3.1
2.6
16.7
11.5
5.4
3.5
2.9
19.9
126
56
37
30

21 5
13 0
57

37
3 0
223
130
57
37
3 0

135
113
88
76
70
129
109
86
76
69
125
106
85
75
69
122
104
85
75
69
146
124
94
80
73
137
115
89
78
71
130
110
87
77
71

0143

126
107
86
76
71

0020
0034
0.075
0.117
0 142

123
105
86
76
70

0.019
0.033
0.075
0116
0141

MOTOROLA RF DEVICE DATA

2-165

69
68
70
68
66
69
69
72
69
67
70
71
73
70
68
71
63
62
62
62

70
66
69
67
66
70
68
71
69
68

70
71
72
70
69
70
71
73
70
69

0 74
0.58

0.46
0.45
0.45
0.71
0.57
047
045
046

-14

-21
-25
-30
-34
-18
-23
-23
-28
-32
-20
-22
-21
-27

-31
-21
-21
-20
-27
-31
-20
-20
-19
-26
-30

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

BFX89
BFY90

The RF Line
fj = 2.0 GHz @ 10 mA

HIGH FREQUENCY

NPN SILICON HIGH-FREQUENCY TRANSISTORS

TRANSISTORS

... designed for VHFand UHF applications where high-gain, lownoise and good intermodulation characteristics are required.
Particularly suited for wideband MATVamplifiers.
High Current-Gain Bandwidth Product fr
1.2 GHz (Min) <> lc = 25 mAdc BFX89
1.3 GHz (Min) @ lc = 25 mAdc BFY90

NPN SILICON

Low Noise Figure NF

6.5 dB (Max) @ f = 500 MHz BFX89
5.0 dB (Max) @ f = 500 MHz BFY90

High Power Gain Gpe

19 dB (Min) @ f = 200 MHz BFX89

21 dB (Typ) @ f = 200 MHz BFY90

JEDEC Equivalents 2N6304. 2N6305

l~A-|

-fr
_!

1U-D
MAXIMUM RATINGS

Rating

STYLE 10.

Symbol

Value

Unit

Collector-Emitter Voltage

VcEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

vEBO

2.5

Vdc

Collector-Current Continuous

mAdc

Total Continuous Device Dissipation

@TA = 25C

MAX

200

531

584

0209

1.14

mWVC

-65 to +200

a
c
D
E
F
6

452
4.32
041

4. CASE

NOTE:All RULESAND NOTESASSOCIATEDWITHTO 72

OUTLINE SHALL APPLY.

MUMETERS

Derate above 25C

Storage Temperature Range

PIN1 EMITTER
2. BASE
3.C0UKT0H

V<^

Tstg

INCHES
MM
MAX
0230

495

0178

0.195

533

0170

0210

053
076

0016

048

0016

254 BSC
091
117

0036

00(6

031

0028

0043

1270

041

122
_

35
45" BSC
127 BSC

1 1.27

MOTOROLA RF DEVICE DATA

2-166

0.019

0.100 BSC

0500

0250

45'BSC
0050 BSC

CASE 20-03
TO-206AF

(TO-72)

0.021

0.030

1 0.050

BFX89, BFY90

ELECTRICAL CHARACTERISTICS (Ta =25C unless otherwise noted)

Characteristic

Symbol I

Min

Typ

OFF CHARACTERISTICS

V(BR|CEO

Collector-Emitter Breakdown Voltage

Vdc

UC= lOmAdc. Ib = 0)
Collector Cutoff Current

'CBO

150

nAdc

(VCB= 15 Vdc. Ie = 0)
ON CHARACTERISTICS
DC Current Gain

"FE

dC = 2.0 mAdc. VCe = 1 0 Vdc)

(lC = 25 mAdc. VC = 1 0 Vdc)

125

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance (1)

(Vcb = 10 Vdc. Ie = 0. f = 1.0 MHz)

BFX89
BFY90

Ccijo

Emitter-Base Capacitance

BFY90

cibo

0.85

1.7

0.85

1.5

2.0

(Veb = 0.5 Vdc. Ic = 0. f = 1.0 MHz)

Current-Gain-Bandwidth Product (2)

GHz

(lC = 2.0 mA. VCE = 5.0 Vdc. f = 500 MHz)

BFX89

(lC = 25 mA. VCe = 5-0 Vdc. f = 500 MHz)

BFX89

1.2

BFY90

1.3

1.0

BFY90

1.7

FUNCTIONAL TEST

Common-Emitter Amplifier Power Gain (2)

BFX89

(Vce = 10 Vdc. lc = 8.0 mA. f = 200 MHz)

BFY90

Spot Noise Figure (R$ = Optimum) (2)

(Vce = 5.0 Vdc. lc = 2.0 mA. f = 500 MHz)

BFX89
BFY90

Gpe

21
NF

Notes 1. Pin 4 is not grounded.

2. Pin 4 is grounded.

2.5

6.5

2.5

5.0

|S21IJ

3. Gu(max)is calculatedIromthe S-Parameters using the equationGu(max)

(1-ISii|2)(1.|S22l2)

FIGURE 2 POWER GAIN versus

FIGURE 1 -

COLLECTOR CURRENT

POWER GAIN versus FREQUENCY

VC = s.ov

1C= 2.0

Gu|ma)

V'CE= 10\
1 = 5( OMI l

G(nMi|
S

|S2tl2
2
;

0.1

0.1 s

0.2

0.3

0.4

lC.COLLECTOR CURRENT (mA)

I. FREQUENCY (GHt)

MOTOROLA RF DEVICE DATA

2-167

BFX89, BFY90

FIGURE 4 FIGURE 3 NOISE FIGURE versus FREQUENCY

NOISE FIGURE versus

COLLECTOR CURRENT

b.U

/
4.U

/
/

_6.0

/
= 4.0
\ CE = 5.0 V

vce = 5.0V
>c = 2.0 mA

1 = 50 0 MHz

0.2

0.3

0.4

0.7

1.0

I. FREQUENCY (GHz)

lC.COLLECTOR CURRENT (mA)

FIGURE 5 - CURRENT GAIN-BANDWIDTH PRODUCT

versus COLLECTOR CURRENT

FIGURE 6 - OUTPUT CAPACITANCE versus VOLTAGE

_2.0

'CE= 1OV

^2.0

g 1.5

"mm^T

V CE

=5 0V
1.0

1 = bU0 MHt

C0t

1.0

o0.5

Ccb

c cbIN lL-s: 0-75 IBM ethor. 324 11

c obWI1L-S1 0-75 0BM ether, 323 6)

5.0

4.0

lC.COLLECTOR CURRENT (mA)

8.0

Vcb.COLLECTOR-BASE VOLTAGE (Vdc)

MOTOROLA RF DEVICE DATA

2-168

BFX89, BFY90
COMMON EMITTER SCATTERING PARAMETERS
FIGURE 7 - INPUT AND OUTPUT REFLECTION

FIGURE8 - FORWARD AND REVERSE TRANSMISSION

COEFFICIENTS versus FREQUENCY

jSO

Vce = 10 V. IC = 10 mA
-J50
Coordinates in Ohms
S -

1 VCE

(Volts)

(mA)

5.0

2.0

5.0

Frequency
(MHz)

2.0

5.0

0.81

200

0.64

S21
IC

IS21I

S22

S12
IC

IS12I

IS22I

-11

-37

5.76

148

0.031
0.050

-66

4.56

127

0.95
0.87

400

0.41

-105

2.91

102

0.071

0.79

-23

800

0.26

-157

1.63

0.105

0.75

-34

1000

0.23

179

1.38

0.129

0.74

-41

100

0.60

-54

9.73

133

0.026

0.87

-13

-17

200

0.41

-84

6.33

112

0.040

0.78

-17

400

0.26

-121

3.54

0.064

0.73

-21

800

0.19
0.17

-169

1.89

0.112

0.72

-31

168

1.59

0.140

0.71

-39

100

0.71

-66

12.13

122

0.022

0.81

-14

200

0.28

-96

7.11

104

0.036

0.73

-15

400

0.19

-133

3.85

0.064

0.70

-19

800

0.18

-178

2.00

0.115

0.71

-30

1000

0.17

160

1.66

0.143

0.70

-37

100

0.26

-88

12.79

112

0.019

0.76

-13

200

0.20

-122

7.04

0.034

0.71

-13

400

0.20

-156

3.68

0.062

0.70

-18

800

0.23

165

1.88

0.114

0.71

-30

1000

0.24

146

1.56

0.145

0.70

-38

100

0.83

-34

5.82

150

0.025

0.96

200

0.66

-61

4.60

129

0.042

0.89

-15

400

0.42

-97

2.98

104

0.059

0.83

-20

-9

800

0.25

-147

1.69

0.088

0.80

-31

1000

0.20

-172

1.42

0.108

0.79

-38

100

0.63

-48

9.94

135

0.021

0.90

-11

200

0.43

-76

6.54

114

0.034

0.82

-15

400

0.26

-108

3.72

0.054

0.77

-19

800

0.16

-155

1.98

0.095

0.77

-24

1000

0.14

180

1.65

0.119

0.76

-36

100

0.47

-57

12.42

125

0.019

0.85

-12

200

0.30

-83

7.43

106

0.031

0.78

-14

400

IShI

100

1000
10

PARAMETERS

S11

0.19

-113

4.04

0.054

-18

0.14

-160

2.09

0.098

78
84

0.75

800

0.75

-28

1000

0.13

173

1.73

0.121

0.75

-35

100

0.32

-71

13.05

114

0.017

0.81

-11

200

0.21

-99

7.27

0.029

0.77

-12

400

0.16

-135

3.81

0.052

0.76

-16

800

0.17

177

1.96

0.096

0.76

-28

1000

0.18

154

1.62

0.120

0.76

-35

MOTOROLA RF DEVICE DATA

2-169

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

BT500
The RF Line

RF Bias Source
... designed for use in Class AB amplifiers to provide a thermally tracked bias source.
Gold Metallized Die for Improved Reliability
Hermetic Package

BIAS SOURCE
FOR
CLASS AB
RF DEVICES

CASE 036-03, STYLE 1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

VEBO

Vdc

200

Tstg

-65 to +200

Emitter-Base Voltage

Operating Junction Temperature

Storage Temperature Range

ELECTRICAL CHARACTERISTICS
Characteristic

Typ

Symbol

Min

V(BR)EBO

1.3

hFE

100

Max

Unit

OFF CHARACTERISTICS

Emitter-Base Breakdown Voltage

E = 5 mA, lc = 0)
Emitter-Base Forward Voltage
(IE = 500 mA)

Vdc

ON CHARACTERISTICS
DC Current Gain

dC = 100 mA, Vce = 5 V)

ADJUSTMENT FOR ICq

10-12O

@5W

+5Vdc -^-

vw-

1/iMjj"

Figure 1. Suggested Circuit for BT500

MOTOROLA RF DEVICE DATA

2-170

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

BT500F
The RF Line

RF Bias Source
... designed for use in Class AB amplifiers to provide a thermally tracked bias source.

BIAS SOURCE
FOR
CLASS AB
RF DEVICES

Gold Metallized Die for Improved Reliability

Isolated SOE Style Package

.380 SOE F

CASE 211-07, STYLE 1

MAXIMUM RATINGS

Rating
Emitter-Base Voltage

Symbol

Value

Unit

Vebo

Vdc

200

Tstg

-65 to +150

Operating Junction Temperature

Storage Temperature Range

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Min

V(BR)EBO

1.3

hfE

100

Typ

Max

Unit

OFF CHARACTERISTICS

Emitter-Base Breakdown Voltage

E = 5 mA, lC = 0)
i Emitter-Base Forward Voltage

(>E = 500 mA)

Vdc

ON CHARACTERISTICS
DC Current Gain

C = 100 mA, VCE = 5 V)

10n 20 T

ADJUSTMENT FOR lCQ

TRIMP0T *^

-5Vdc^

Figure 1. Suggested Circuit for BT500F

MOTOROLA RF DEVICE DATA

2-171

CD6150

MOTOROLA

(See LT4217)

SEMICONDUCTOR
TECHNICAL DATA

JO2015A

The RF Line

UHF Power Transistor

The JO2015A is an internally matched NPN silicon UHFpower transistor. Its multicell
design allows optimum heat dissipation and operating efficiency.A slotted-grid finger
structure assures uniform current injection. Ruggedability and long-term reliability are
guaranteed by unique, diffused silicon ballasting resistors coupled with a refractory-gold

50 W 400 MHz
UHF POWER
TRANSISTOR

passivated metallization system.

50W-Pout(65W-Psat)
28V-VCc

225-400 MHz

Internally Matched

Gold Metallization

.500 J ZERO

CASE 316A-01, STYLE 1

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

Rating

VceO

Vdc

Collector-Base Voltage

VcbO

Vdc

Emitter-Base Voltage

VebO

3.5

Vdc
Adc

Collector Current Continuous

Operating Junction Temperature

200

Tstg

-65 to +200

Symbol

Max

Unit

RflJC

1.25

Storage Temperature Range

c
X

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise notedl

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage 0c = 50 mA, In, = 0)

V(BR)CEO

Collector-Base Breakdown Voltage (lc = 100 mA, Ig - 0)

V(BR)CBO

Emitter-Base Breakdown Voltage (!g = 5 mA, lc = 0)

V(BR)EBO

3.5

hFE

Vdc
Vdc

Vdc

ON CHARACTERISTICS

DC Current Gain (lc = 1 A. VCe = 10 V)

100

DYNAMIC CHARACTERISTICS

Output Capacitance (Vcb = 28 V, l = 0, f = 1 MHz)

Cob

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

Gpe

(Vce = 28 v' pout = 50 W, f = 400 MHz, Iq = 100 mA)

Collector Efficiency

(Vce = 28 V, Iq = 100 mA, Pout = 50 W, f = 400 MHz)

Load Mismatch

<!>

No Degradation in
Output Power

(Vce = 28 V, Pout = 50 W, f = 400 MHz,

Load VSWR = 10:1, All Phase Angles)

Saturated Output Power (Vce = 28 V,f = 400 MHz, Iq = 100 mA)

psat

MOTOROLA RF DEVICE DATA

2-172

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

JO3037
The RF Line

NPN Silicon
UHF Power Transistor

37 W 512 MHz
RF POWER

... designed primarily for 12.5 Volt wideband, large-signal amplifier applications in

TRANSISTOR

industrial and commercial FM equipment operating to 512 MHz.

NPN SILICON

Specified 12.5 Volt, 470 MHz Characteristics:

Output Power 37 Watts
Gain 4.9 dB, Min

Efficiency 60%, Typ

Internally Matched for Broadband Operation

Tested for Load Mismatch Stress

Gold Metallization for Improved Reliability

Diffused Ballast Resistors

.500 J ZERO

CASE 316A01, STYLE 1

MAXIMUM RATINGS

Symbol

Value

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

Vdc

Rating

Unit

vEBO

Collector Current Continuous

Adc

Total Device Dissipation @ Tc = 2S*C

Watts

0.48

W/"C

200

Tstg

-65 to t 150

Symbol

Max

Unit

RJC

2.1

'CW

Derate above 25X

Operating Junction Temperature

Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (lc = 50 mA, lg

v(BR)CEO

Collector-Base Breakdown Voltage (lc = 50 mA, Ie = 0)

V(BR)CBO

Emitter-Base Breakdown Voltage (Ie 5 mA, lc - 0)

v(BR)EBO

Collector Cutoff Current (Vce " 15 V, Vbe = 0)

!CES

Vdc

mAdc

ON CHARACTERISTICS

DC Current Gain (lc = 1 A. VCe = 5 V)

"FE

Gpe

4.9

200

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

(Vce - 12.5 V, Pjn = 12 W, f = 470 MHz)
Collector Efficiency

(VCe = 12-5 V, Pout = 37 W. f = 470 MHz)

Load Mismatch

<1>

(Vce = 15.5 V. P|n = 12 W. f = 470 MHz,

Load VSWR = 20:1, All Phase Angles)

MOTOROLA RF DEVICE DATA

2-173

No Degradation in
Output Power

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

JO3501
JO3502
PTE801

The RF Line

NPN Silicon
UHF Power Transistors

2 W, 15 W. 35 W

... designed for 24 Volt UHF large-signal applications in industrial and commercial FM
equipment operating at frequencies to 960 MHz.
Specified 24 Volt, 960 MHz Characteristics:
PTE801

JO3501

JO3502

2W
9dB
45%

15W
9.2 dB
55%

35 W
7.7 dB
55%

C.E.

C.B.

Output Power
Gain, Min

Efficiency
Configuration

960 MHz
UHF POWER

TRANSISTORS
NPN SILICON

Gold Metallization for Improved Reliability

Diffused Ballast Resistors

CASE 828-01, STYLE 1

JO3501

MAXIMUM RATINGS

Rating

Symbol

PTE801 JO3501 JO3502

Unit

CASE 319C-01, STYLE 1

VCEO

Vdc

JO3502

Collector-Base Voltage

VCES

Vdc

Emitter-Base Voltage

VEBO

Adc

Collector-Emitter Voltage

Vdc

Collector Current Continuous

Operating Junction Temperature

200

Tstg

-65 to +150

Symbol

Max

Unit

RflJC

22 | 4.6 | 2.3

"C/W

Storage Temperature Range

0.75

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

.200 SOE

MOTOROLA RF DEVICE DATA

2-174

CASE 305B-01, STYLE 1

PTE801

JO3501, JO3502, PTE801

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Collector-Emitter Breakdown Voltage

dC = 5 mA, Ib = 0)
(lC = 5 mA <B = 0)
OC = 25 mA, Ib = 0)

PTE801
JO3501
JO3502

Collector-Emitter Breakdown Voltage

C = 5 mA, Vbe = 0)
(C = 25 mA, Vbe = >
(lC = 25 mA, Vbe = 0)

Collector Cutoff Current

(Vce * 25 V, VflE = 0)

Typ

Max

Vdc

V(BR)CES
55

50
50
Vdc

V(BR)EBO
PTE801
JO3501
JO3502
PTE801

Unit
Vdc

PTE801
JO3501
JO3502

Emitter-Base Breakdown Voltage

E = 1 mA. lc = 0)
(IE = 5 mA, lc = 0)
E = 5 mA, lc = 0)

Min

V(BR)CEO

4
4

Ices

JO3501

J03502

2
5

mAdc

ON CHARACTERISTICS
DC Current Gain

(lC = 100 mA, Vce "5 V)

(lC = 1 A, Vce = 5 V)
C = 1 A, Vce = 5 V)

"FE

PTE801
J03501
JO3502

10
10
10

150
-

100
100

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

PTE801

GPE

(Vce = 24 V. Pout = 2 W, f = 360 MHz)

Common-Base Amplifier Power Gain

(Vce = 24 V, Pout = 15 W, f = 960 MHz)

(Vce = 24 V, Pout = 35 W, f = 960 MHz)

GpB

JO3501
JO3S02

Collector Efficiency

(Vce " 24 V, Pout "= 2 W, f = 960 MHz)

(Vce = 24 V, Pout = 15 W, f = 960 MHz)
(Vce = 24 V, Pout = 35 W, f = 960 MHz)

dB
9.2
7.7
%

PTE801
JO3501
JO3502

MOTOROLA RF DEVICE DATA

2-175

45
55
55

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

JO4036
The RF Line

NPN Silicon
VHF Power Transistor

36 W 175 MHz
RF POWER
TRANSISTOR
NPN SILICON

... designed primarily for 12.5 Volt wideband, large-signal amplifier applications in
industrial and commercial FM equipment operating to 175 MHz.
Specified 12.5 Volt, 175 MHz Characteristics:
Output Power 36 Watts
Gain 7.8 dB, Min

Internally Matched for Broadband Operation

Tested for Load Mismatch Stress

Gold Metallization for Improved Reliability

Diffused Ballast Resistors

CASE 316A-01, STYLE 1

(.500 J ZERO)
MAXIMUM RATINGS

Rating

Symbol

Value

Collector-Emitter Voltage

VcEO

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

Unit

vEB0

Vdc

Collector Current Continuous

6.5

Adc

Total Device Dissipation @ Tq = 25C

100
0.57

Watts
wrc

Derate above 25C

Operating Junction Temperature

Storage Temperature Range

200

Tstg

-65 to +150

Symbol

Max

Unit

RftJC

1.75

"C/W |

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (lc - 50 mA, Ib = 0)

V(BR)CEO

Collector-Base Breakdown Voltage (lc - 50 mA, Ie - 0)

V(BR|CBO

Emitter-Base Breakdown Voltage (Ie = 5 mA, lc = 0)

V(BR)EBO

Collector Cutoff Current (Vce = 15 V, Vbe = n>

ices

4
-

Vdc

Vdc
Vdc
mAdc

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

(Vce = 12.5 V, Pin = 6 W, f = 175 MHz)

Gre

Load Mismatch

7.8

<l>

Load VSWR = 20:1, All Phase Angles)

IRL

(Vce = 12.5 V, Pjn = 6 W, f = 175 MHz, Circuit in Figure 7)

MOTOROLA RF DEVICE DATA

2-176

No Degradation in
Output Power

(Vce = 15.5 V. Pin = 6 W. f = 175 MHz,

Input Return Loss

JO4036
TYPICAL CHARACTERISTICS
60

Pin = 10W
Pin = 6W

Ig 40

Pj = 4W

<&*

2 30

Pin == 2.5Vk
Pin = 1W

1h
1
1
13S

145

1S5

175

165

(.FREQUENCY (MHz)

Pin, INPUT POWER (WATTS)

Figure 1. Output Power versus Frequency

Rgure 2. Output Power versus Input Power

P0-i-45W
36W

2SW

R
50
15 W

VCC = 12-5 V
Port = 45W

135

145

155

165

175

135

145

155

165

175

I, FREQUENCY (MHz)

f, FREQUENCY (MM

Figure 4. Series Input Impedance versus Frequency

Rgure 3. Collector Efficiency versus Frequency

180

160

R
2

g 140

CU s r

V<x = 12.5 V
Pout = 45W -

rS>
+X
60
135

145

155

165

175

f.FREQUENCY (MHz)

VCb- COLLECTOR-BASE VOLTAGE (VOLTS)

Rgure 5. Series Output Impedance versus Frequency

Rgure 6. Output Capacitanceversus Voltage

MOTOROLA RF DEVICE DATA

2-177

JO4036

x^'
^Tn

JCr

CI, C2 25 pF
C3,C4 SOpF
C5 250 pF
C6 200 pF
C7 160 pF
C8lOOpF
C9. CIO 40pF
C11 25 pF
C12, C13 1000 pF
C14 0.001 mF
CIS 0.01 mF
C16 25fiF
L1 2T 18 AWG .2" dia.

sr*.

JC9

>t\

JCll

L2 .2*hairpin .125"wide x .025 thick copper strip

L3 .1" x .2*wide x .005" thick copper loop
L4 .3" hairpin 18 AWG
L5 3T18AWG. .2" dia.
L6 4T18AWG, .2" dia.
RFC 2-1/2T on VK-211-07/38 ferroxcube

T1 .2"width .5" length from package as ref.

T2 .2" width .4* length from package as ref.
NOTES:

1. All capacitors in signal path are Underwood ElectricCorp.

Case Type J101.

2. Position CS and C6 as close to pkg. as possible.

Rgure 7. Broadband Test Rxture

CI 25 pF
C2.C4 80 pF
C3 30 pF
C5 250 pF
C6 200 pF
C7 ISO pF
C8lOOpF
C9, CIO 40 pF
C11 10 pF
C12, C14 1000 pF
C13 15 pF
C15 5>iF25V

C16 O.OOIKDisc

C17 0.01 m1 KV Disc

LI 2T .2" dia. 18 AWG .250" long
L2 .2" hairpin .125" wide x .025 thick
RFC1 2-1/2T on VK-211-07/3B ferroxcube

L3 .3" hairpin #18 AWG

L4 3T .2" dia. #10 AWG .500" long
L5 4T .2" dia. #18 AWG .400" long
L6 .5" x .2"
L7 .4" x T

L8 .1" x .2" wide x .005" thick

Material: .062" Epoxy Board, Copper Clad 2 Sides

Rgure 8. Test Rxture Component Layout

MOTOROLA RF DEVICE DATA

2-178

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

The RF Line

NPN Silicon
VHF Power Transistor

45 W 175 MHz
RF POWER
TRANSISTOR
NPN SILICON

... designed primarily for-12.5 Volt wideband, large-signal amplifier applications in

industrial and commercial FM equipment operating to 175 MHz.
Specified 12.5 Volt,175 MHz Characteristics:
Output Power 45 Watts
Gain 6.5 dB, Min

Internally Matched for Broadband Operation

Tested for Load Mismatch Stress

Gold Metallization for Improved Reliability

Diffused Ballast Resistors

CASE 316A-01. STYLE 1

(.500 J ZERO)

MAX/MUM RATINGS

[^""
| Collector-Emitter Voltage

Rating

Collector-Base Voltage
Collector CurrentContinuous

I Total Device Dissipation (a Tq = 25C

Value

VCEO

Vdc

VCES

Vdc

6.5

Adc

100

Watts

0.57

W/C

200

Tstg

-65 to +150

Symbol

Max

| UnH

Rejc

1.75

C/W

Derate above 25C

Operating Junction Temperature

Storage Temperature Range

Unit

Symbol

c |

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage 0c = 50 mA, Ib = 0)

V(BR)CEO

Collector-Emitter Breakdown Voltage 0c = 50 mA, Vbe = )

V(BR)CES

Collector Cutoff Current (Vce = 15 V, Vbe = r

Ices

Vdc
Vdc

200

mAdc

ON CHARACATERISTICS

DCCurrent Gain 0c = 1 A, Vce = 5 V)

"FE

Gpe

6.5

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

(Vce = 12.5 V, Pjn = 10 W, f = 175 MHz)

Load Mismatch

No Degradation in
Output Power

(Vce = 15.5 V, Pjn = 10 W, f = 175 MHz,

Load VSWR = 20:1, All Phase Angles)
Input Return Loss

IRL

(Vce = 12.5 V, Pjn = 10 W, f = 175 MHz, Circuit in Figure 7)

MOTOROLA RF DEVICE DATA

2-179

'
|

JO4045
TYPICAL CHARACTERISTICS

>in =

15W

10 w

***

1= 135 MHz

1
5
i

2.5 W

/
I

o?
CLASS r

= 12.5 V

135

<i
/ r

vce

175 MHz

As* ^

//
Y

CLASS C

"vCc

= 12.5 V

145

1S5

165

175

(FREQUENCY (MHz)

Pin, INPUT POWER (WAnS)

Rgure 1. Output Power versus Frequency

Rgure 2. Output Power versus Input Power

P0 + 55W

""'

45 W

fc
70
z

35 W

25 W

3 50

CLAa;>(.

class t

V(x = 12.5 V
Pout = 45W
n

135

145

155

165

175

135

145

f, FREQUENCY (MHz)

155

165

f, FREQUENCY (MHz)

Rgure 3. Broadband Collector Efficiency

Rgure 4. Series Input Impedance

160

. 140
8

Cli~

VCc = 12.5 V

" Pout = 45W "

100

+X
135

145

155

^'-T-

165

175

f, FREQUENCY (MHz)

Vcr. COLLECTOR-BASE VOLTAGE (VOLTS)

Rgure 5. Series Output Impedance

Rgure 6. Output Capacitance

MOTOROLA RF DEVICE DATA

2-180

JO4045

Broadband Test Fixture

ST32

Ci?,

C1.C2 25 pF
C3.C4 80 pF
C5 250 pF
C6 200 pF
C7 150 pF
C8lOOpF
C9.C10 40 pF
C11 25 pF
C12, C13 lOOOpF
C14 0.001 mF
C15 0.01 itf
C16 25 mF
L1 2T 18 AWG .2" dia.

L2 .2' hairpin .125" wide x .025 thick copper strip

L3 .1" x .2" wide x .005" thick copper loop
U .3" hairpin 18 AWG
L5 3T IS AWG, .2* dia.
L6 4T 18 AWG, .2* dia.
RFC 2-1/2T on VK-211-07/38 ferroxcube

T1 .2" width .5" length from package as ref.

T2 .2" width .4" length from package as ref.
NOTES:

1. All capacitors in signal path are Underwood Electric Corp.

Case Type J101.
2. Position C5 and C6 as close to pkg. as possible.

Figure 7. Broadband Test Fixture

CI 25 pF
C2. C4 80 pF
C3 30 pF
C5 250 pF
C6 200 pF
C7 150 pF
C8 100 pF
C9, CIO 40 pF
C11 10 pF
CI 2, C14 1000 pF
C13 15 pF
C15 5mF25V

C16 0.001 K Disc

C17 0.01 Ml KV Disc

L1 2T .2" dia. 18 AWG .250" long

L2 .2" hairpin .125" wide x .025 thick
RFC1 2-1/2T on VK-211-07/3B ferroxcube

L3 .3" hairpin #18 AWG

L4 3T .2" dia. #10 AWG .500* long
L5 4T .2" dia. #18 AWG .400* long
L6.5"x.2"
L7 .4" x .2"

L8 .1" x .2" wide x .005" thick

Material: .062" Epoxy Board. Copper Clad 2 Sides

Rgure 8. Test Fixture Component Layout

MOTOROLA RF DEVICE DATA

2-181

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

The RF Line

NPN Silicon

High Frequency Transistor

lC = 200 mA
HIGH FREQUENCY

... designed for ultra-linear communications or instrumentation applications. Low noise

figure combined with high-output capability gives this device an exceptional dynamic
range. Gold metallization and diffused emitter ballasting are combined to achieve the
high reliability demanded by the most severe communications requirements. High gain
makes this transistor ideal for broadband applications.

TRANSISTOR
NPN SILICON

Low Noise 2.5 dB Typ @ f = 300 MHz

High Gain IS21I2 Typ = 13.5 dB@f = 300MHz

Low Distortion ITO = 45 dBm Typ @ f = 300 MHz
Gold Metallization
Diffused Ballast Resistors

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

vEBO

3.5

Vdc

Collector Current Continuous

200

mAdc

Operating Junction Temperature

200

Tstg

-65 to +200

Storage Temperature Range

ELECTRICAL CHARACTERISTICS
Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage dc = 5 mA, Ib - 0)

v(BR)CEO

Collector-Base Breakdown Voltage (lc = 1 mA, lg = 0)

V(BR)CBO

Emitter-Base Breakdown Voltage (lg = 0.1 mA, lc = 0)

V(BR)EBO

3.5

Collector Cutoff Current (Vcb = 10 V, lg = 0)

'CBO

Vdc
Vdc

Vdc

MAdc

ON CHARACTERISTICS

DCCurrent Gain flc = 50 mA, Vce = 5 V)

"FE

Collector-Emitter Saturation Voltage (lc = 50 mA, In. = 5 mA)

VcE(sat)

100

500

300
-

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance (Vcb = 10 V, lg = 0, f = 1 MHz)

Ccb

PF
(continued)

MOTOROLA RF DEVICE DATA

2-182

LT1001A

ELECTRICAL CHARACTERISTICS continued

Symbol

Characteristic

Max

Typ

Mln

Unit

FUNCTIONAL TESTS

Noise Figure, Minimum (Vce = 8 V, lc = 50 mA, f = 300 MHz)

Cutoff Frequency (Vce = 14 V, lc = 90 mA)

nfmin

Maximum Unilateral Gain (Vce = 14 V, lc = 90 mA, f = 300 MHz)

Insertion Gain (Vce = 14 V, lc = 30 mA, f = 300 MHz)
Output Power @ 1 dB Compression

2.5

GUMAX
IS21I2
po1dB

GHz

13.5

dBm

(VCE = 14 V, lc = 30 mA, f = 300 MHz)

Third Order Intercept (Vce = 14 V, lc = 30 mA, f = 300 MHz)

ITO

TYPICAL CHARACTERISTICS

vce

= 14 f

100

150

100

150

200

lC, COLLECTOR CURRENT ImA)

tC,COLLECTOR CURRENT (mA|

Rgure 1. Third Order Intercept and 1 dB Compression

Rgure 2. Gain-Bandwidth Product versus

versus Current

Collector Current

Vce = 8V
lC = 50mA

ganf (dB)

Vce = 14 V
-f = 300 M Kr

~~1

^ _/...
N 7
j vsr
f
*;
3

NF(dB)
2

0.1

0.15

0.2

0.3

0.4 0.5

0.7

0.9 1

100

150

200

lC, COLLECTOR CURRENT (mA)

f, FREQUENCY (GHz)

Figure 3. Noise Figure and Associated Gain

versus Frequency

Figure 4. GuMAX versus Collector Current

MOTOROLA RF DEVICE DATA

2-183

LT1001A

I
6

I s
)/
I

vce =8V
- ( = 300M*

^
"

100

ISO

l&COLLECTOR CURRENT (mA)

Figure 5. Noise Figure versus Collector Current

1
1

: ! II

100

150

200

TC. CASE TEMPERATURE TO

i' 1 I !
I

Figure 6. Dissipation versus Temperature

1
*
5

5
*

]
,

| 3.5 vl

[ """SsCob

i 2.53

-viCrf,

J,.8

""')

t i '

.^s^

- -

"tsJ '
NOTE:
THISDEVICE HAS AN
INTERNAL EMITTER
BALLAST RESISTOR
OF 1.5 OHMS

t
1.2

1
0 0.3

0.5

6 B 10 15 20 25

Vd,.COLLECTOR-BASE VOLTAGE (VI

Rgure 7. Junction Capacitance versus Voltage

100

150

200

Figure 8. Collector Saturation Characteristics

Sll

lC. COLLECTOR CURRENT (mAI

S22

S12

S21

vce

(Volts)

(mA)

(GHz)

Mag

l4>

Mag

t-4>

0.1

0.44

-132

12.52

101

0.05

0.44

-78

0.26

0.35

-168

6.32

0.08

0.3

0.35

175

4.31

0.12

0.23

-94

0.4

161

3.28

0.15

0.23

-103

0.5

0.36
.036

146

2.67

0.19

70'

0.24

-110

0.6

0.37

136

2.28

0.26

-120

0.37

124

2.02

0.23
0.27

0.7

0.29

-127
-136

0.2

-86

0.8

0.36

114

1.81

0.3

0.32

0.9

0.36

105

1.64

0.34

-144

0.35

1.52

0.38

0.65

-152

0.1

0.41

-127

13.58

103

0.04

0.46

-48

0.2

0.38

-158

7.14

0.06

0.38

-57

0.3
0.4

0.39

-173

4.85

0.08

0.39

-66

0.38

-178

3.65

0.1

0.42

-75

0.5

0.39

174

3.02

0.13

0.43

-79

0.6

0.39

168

2.54

0.46

0.15
0.17

2.2

0.49

-85
-92

0.7

0.39

161

0.8

0.39

156

1.91

0.19

0.53

-96

0.9

0.39

150

1.69

0.22

0.57

-102

0.4

144

1.53

0.24

0.59

-105

Hgure 9. Common Emitter S-Parameters

MOTOROLA RF DEVICE DATA

2-184

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

LT1814
The RF Line

NPN Silicon

High Frequency Transistor

fT = 1000 MHz MIN

HIGH FREQUENCY
TRANSISTOR
NPN SILICON

... specifically designed for CRT driver applications requiring high voltage and high
frequency, such as high resolution color graphics video monitors.

High Voltage V(br)CEO = l2 v Min

High Cutoff Frequency fT = 1000 MHz Min
Low Output Capacitance CCD = 2.5 pF Max @ Vcb = 15 V

Gold Metallization

Hermetic SOE Package

CASE 401-01, STYLE 2

(GP-14)

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Base Voltage

VCBO

120

Vdc

Emitter-Base Voltage

VEBO

Vdc

400

mAdc

200

Tstg

-65 to +200

Rating

Collector Current Continuous

Operating Junction Temperature

Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Min

V(BR|CBO

120

V(BR)EBO

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage (lc = 0.1 mA, lg = 0)

Emitter-Base Breakdown Voltage (Ie = 0.1 mA, lc - 0)

Vdc
Vdc

Collector Cutoff Current (Vce = 80 V, Vbe >

CES

100

jiAdc

Collector Cutoff Current {Vqb = 80 V. Ig = 0)

'CBO

fiAdc

ON CHARACTERISTICS

DC Current Gain (lc = 50 mA, Vce = 5 V)

hFE

Collector-Emitter Saturation Voltage (lc - 50 mA, Iq = 5 mA)

VCE(sat)

800

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance (Vcb = 15 V, lg = 0, f = 1 MHz)

CCb

FUNCTIONAL TESTS

Cutoff Frequency (Vce = 15 V, lc = 50 mA, f = 250 MHz)

Insertion Gain (Vce = 10 V, lc = 50 mA, f = 200 MHz)

|S21I2

Maximum Oscillation Frequency

'MAX

(VCe = 10 V, lC = 80 mA, f = 200 MHz)

MOTOROLA RF DEVICE DATA

2-185

GHz
dB
GHz

LT1814
TYPICAL CHARACTERISTICS

vce

1 1
= 10 V

250 MHz
400

1.5

300

200

100
10

Vce,roiLECTOR-EMITTER VOLTAGE (V)

-f 0.5

Rgure 2. Safe Operating Area

100

120

10 COLLECTOR CURRENT (mA)

Rgure 1. Gain Bandwidth Product versus

Collector Current

4.5
5

3.5

2.5

1.5

0.5

Vet,, C0LLECT0R-8ASE VOLTAGE (V)

Rgure 4. Junction Capacitance versus Voltage

100

150

200

To CASE TEMPERATURE (X)

Rgure 3. Power Dissipation versus Temperature

MOTOROLA RF DEVICE DATA

2-186

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

LT1817
The RF Line

NPN Silicon

High Frequency Transistor

fr = 1000 MHz MIN

HIGH FREQUENCY
TRANSISTOR
NPN SIUCON

... specifically designed for CRT driver applications requiring high voltage and high
frequency, such as high resolution color graphics video monitors.

High Voltage V(br)cbO = 120 V Min

High Cutoff Frequency fT = 1000 MHz Min

Low Output Capacitance CCD = 2.5 pF Max @ Vcb = 15 V

Gold Metallization

Common Base Configuration

CASE 244D-01, STYLE 2

(TO-117A)

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

Rating

VcEO

Vdc

Collector-Base Voltage

VcBO

120

Vdc
Vdc

mAdc

Emitter-Base Voltage

Vebo

Collector Current Continuous

400

Operating Junction Temperature

200

Tstg

-65 to +200

Storage Temperature Range

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (lc = 1 mA, Iq - 0)

V(BR)CEO

Collector-Base Breakdown Voltage (lc = 0.1 mA, Ie - 0)

V<BR)CBO

120

{ Emitter-Base Breakdown Voltage(Ie = 0.1 mA, lc = 0)

V(BR)EBO

| Collector Cutoff Current (Vcb = 80 V, l = 0)

ICBO

Collector Cutoff Current (Vce = 80 V, Vbe = 0>

'CES

Vdc

Vdc
Vdc

fiAdc

100

fiAdc

ON CHARACTERISTICS

I DC Current Gain (lc = 50 mA, Vce = 5V)

"FE

Collector-Emitter Saturation Voltage (lc - 50 mA, Ib - 5 mA)

VCE(sat)

20
-

60
800

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance (Vcb = 15 V, lg = 0, f = 1 MHz)

Ccb

FUNCTIONAL TESTS

Cutoff Frequency (Vce = 15 V, lc = 50 mA, f = 200 MHz)

Insertion Gain (Vce = 10 V, lc = 50 mA, f = 200 MHz)

IS21I2

MOTOROLA RF DEVICE DATA

2-187

GHz
dB

LT1817

TYPICAL CHARACTERISTICS

VCE = 10 V
'0 = 2MMrtt

1
z

1.5

-1 "

| 300

400

200

D
<->

100
0

Vc, COLLEaOR-EMITTER VOLTAGE (V)

0.5

Rgure 2. Safe Operating Area

100

120

t, COLLECTOR CURRENT (mAI

Rgure 1. Gain Bandwidth Product versus

Collector Current

45
4

3.5
3

I
\

2.5

*-^

Vcb, COLLECTOR-BASE VOLTAGE (V)

Rgure 4. Junction Capacitance versus Voltage

100

150

200

TC, CASE TEMPERATURE (C)

Rgure 3. Power Dissipation versus Temperature

MOTOROLA RF DEVICE DATA

2-188

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

The RF Line

NPN Silicon

High Frequency Transistor

fj = 1000 MHz MIN

HIGH FREQUENCY
TRANSISTOR
NPN SILICON

... specifically designed for CRT driver applications requiring high frequency and high
voltage, such as high resolution color graphics video monitors.

High Voltage V(BR)CBO = 120 V Min

High Cutoff Frequency fT = 1000 MHz Min

Low Output Capacitance CCD = 2.5 pF Max @ Vcb = 15 V

Gold Metallization

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VcBO

120

Vdc

Emitter-Base Voltage

vEBO

Vdc

300

mAdc

Collector Current Continuous

Operating Junction Temperature

Storage Temperature Range

200

Tstg

-65 to +200

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage 0c = 1 mA, Ib = 0)

V(BR)CEO

Collector-Base Breakdown Voltage (lc - 0.1 mA, Ie = 0)

V(BR)CBO

120

Emitter-Base Breakdown Voltage (Ie = 0.1 mA, lc = 0)

V(BR)EBO

Collector Cutoff Current (Vcb = 80 V, Ie = 0)

ICBO

Collector Cutoff Current (Vce = 80 V, Vbe = 0)

'CES

Vdc
Vdc
Vdc

fiAdc

100

/tAdc

ON CHARACTERISTICS

DCCurrent Gain (lc = 50 mA, Vce = 5 V)

Collector-Emitter Saturation Voltage 0c = 50 mA, \q = S mA)

VCE(sat)

20
-

800

2.5

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance (Vcb = 15 V, l = 0. f = 1 MHz)

Ccb

FUNCTIONAL TESTS

Cutoff Frequency (Vce = 10 V, lc = 80 mA, f = 250 MHz)

Insertion Gain (Vce = 10 V, lc = 50 mA, f = 200 MHz)

|S21I2

MOTOROLA RF DEVICE DATA

2-189

GHz
dB

LT1839

TYPICAL CHARACTERISTICS

VCE =

10 V

J 300

50 MHz

z
cc

1.5

inn

v\
10

0.5

VCE, COLLECTOR-EMITTER VOLTAGE IV)

Rgure 2. Safe Operating Area

100

120

lOLCETR,C

lG COLLECTOR CURRENT (mAI

Rgure 1. Gain Bandwidth Product versus

Collector Current

J
2

Vcb. COLLECTOR-BASE VOLTAGE (V)

Rgure 4. Junction Capacitance versus Voltage

100

150

200

To CASE TEMPERATURE TO

Rgure 3. Power Dissipation versus Temperature

MOTOROLA RF DEVICE DATA

2-190

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

LT2001
The RF Line

NPN Silicon

High Frequency Transistor

>C = 200 mA
HIGH FREQUENCY
TRANSISTOR
NPN SIUCON

... designed for ultra-linear communications or instrumentation applications. Low noise

figure combined with high-output capability gives this device an exceptional dynamic
range.

Low Noise 2.5 dB Typ @ f = 300 MHz

High Output P0i dB = 26 dBm Typ @ f = 500 MHz

LowDistortion ITOtyp = 46 dBm (a f = 500 MHz

Diffused Ballast Resistors

CASE 244A-01, STYLE 1

(TO-117A)
MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

vEbo

3.5

Vdc

200

mAdc

200

Tstg

-65 to +200

Collector Current Continuous

Operating Junction Temperature

Storage Temperature Range
ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-EmitterBreakdown Voltage Oc = 5 mA, Ib = 0)

V(BR)CEO

Collector-Base Breakdown Voltage Oc = 1 mA, lg = 0)

V(BR)CBO

Emitter-Base Breakdown Voltage (Ie - 0.1 mA, lc - 0)

V(BR)EBO

3.5

Collector Cutoff Current (Vcb = 10 V, Ie = 0)

ICBO

Vdc
Vdc
Vdc

/xAdc

ON CHARACTERISTICS

DCCurrent Gain Oc = 50 mA, Vce = 5 V)

hFE

Collector-EmitterSaturation Voltage 0c = 50 mA, \qI\q = 10)

VCE(sat)

Ccb

nfmin

100
500

300

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance (Vcb = 10 V,lg = 0, f = 1 MHz)

1.2

FUNCTIONAL TESTS

Noise Figure, Minimum (Vce = 8 V, lc = 50 mA, f = 300 MHz)

Cutoff Frequency (Vce = 14 V, lc = 90 mA)

Maximum Unilateral Gain (Vce = 14 V, lc - 30 mA, f = 500 MHz)

Insertion Gain (Vce = 14 V, lc = 90 mA, f = 500 MHz)

gumax
IS21I2

Output Power <S> 1 dB Compression

PoldB

(Vce = 14 V, lc = 90 mA, f = 500 MHz)

Third Order Intercept (Vce = 14 V, lc = 90 mA, f = 500 MHz)

ITO

MOTOROLA RF DEVICE DATA

2-191

2.5

3
14
11.5
26

GHz
dB
dB
dBm

dBm

LT2001

vce. :

S21

Sll

S22

S12

(Volts)

(mA)

(GHz)

Mag

i-<t>

Mag

0.1

0.49

-119

15.08

114

0.03

0.47

-57

0.2

0.43

-159

9.12

0.05

0.33

-58

0.3

0.42

177

6.39

0.06

0.31

-71

0.4

0.42

165

4.88

0.08

0.31

-76

0.1

0.33

-87

0.12

0.32

-98

0.5

0.42

152

3.91

0.6

0.45

141

3.29

0.7

0.44 .

135

2.83

0.14

0.35

-106

0.8

0.46

126

2.5

0.16

0.38

-126

0.18

0.39

-136

0.4

-145

0.9

0.48

118

2.21

0.48

114

1.98

0.2

0.1

0.51

-132

17.28

111

0.02

0.51

0.2

0.49

-163

9.25

0.04

0.4

0.3

0.51

-177

6.34

0.05

0.37

39
43

0.4

0.52

174

4.76

0.06

0.36

3.89
3.27

0.08

0.1

0.39
0.41

69
79

0.5

0.49

171

0.6

0.51

166

0.7

0.52

161

2.78

0.11

0.42

0.8

0.53

158

2.44

0.13

0.43

0.9

0.54

155

2.19

0.15

0.47

0.54

151

1.93

0.16

0.47

104

Figure 9. Common Emitter S-Parameters

MOTOROLA RF DEVICE DATA

2-192

LT2001

Vce = m v
( = 500 MK1 ^"

.^rro

ta
o

vce

= 14V

$
2

| 30
^""idBCO

rIPRESSION

100

150

200

100

150

200

lC. COLLECTOR CURRENT (mA)

lC COLLECTOR CURRENT (mA)

Rgure 1. Third Order Intercept

Rgure 2. Gain-Bandwidth Product versus

and 1 dB Compression versus Current

Collector Current

20 5

GaNF
~

VCE = 8V
IC = 5l mA

vce

12 S

= 14 V

f = 500 M Hz

0.1

0.15

0.2

0.3

0.4 0.5 0.6 0.7 0.80.91

100

150

200

lC, COLLECTOR CURRENT ImA)

(.FREQUENCY (GHzl

Rgure 3. Noise Figure and Associated

Gain versus Frequency

Rgure4. Gumax versus Collector Current

MOTOROLA RF DEVICE DATA

2-193

LT2001

8
5
7

Vce = ^v
f = 500 MHz

z
o

SJ 6
s

=>
O

1 3

2
i

100

150

200

TC, CASE TEMPERATURE CCI

lC, COLLECTOR CURRENT (mAI

Rgure 5. Noise Rgure versus Collector Current

Rgure 6. Dissipation versus Temperature

tab
I
JQ

NOTE:

Ccb'

?1J5

THIS DEVICE HAS AN

INTERNAL EMITTER
BALLAST RESISTOR
OF 1.5OHMS

1.2

_[__!

0 0.3

0.5

3 4 5 6 8 10 15 20 25

100

150

200

lCCOLLECTOR CURRENT (mA)

Vcb. COLLECTOR-BASE VOLTAGE (V)

Rgure 7. Junction Capacitance versus Voltage

Rgure 8. Collector Saturation Voltage

versus Current

MOTOROLA RF DEVICE DATA

2-194

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

LT3005

The RF Line

NPN Silicon

High Frequency Transistor

lC = 200 mA
HIGH FREQUENCY
TRANSISTOR
NPN SILICON

... designed for ultra-linear communications or instrumentation applications. Low noise

High Gain IS21I2 = 14dBTyp@f = 500 MHz

High Output P01 dB = 26 dBm Typ @ f = 500 MHz

Gold Metallization
Diffused Ballast Resistors

.200 SOE

CASE 305B-01, STYLE 1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

vebo

3.5

Vdc

0.2

Adc

Emitter-Base Voltage
Collector Current Continuous

Operating Junction Temperature

Storage Temperature Range

200

Tstg

-65 to +200

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-EmitterBreakdown Voltage Oc = 5 mA, Iq = 0)

V(BR)CEO

Collector-Base Breakdown Voltage 0c - 1 mA, Ie = 0)

V(BR)CBO

Emitter-Base Breakdown Voltage (lg = 0.1 mA, lc - 0)

V(BR)EBO

3.5

Collector Cutoff Current (Vcb = 10 V, Ie = 0)

ICBO

Vdc
Vdc
Vdc

pAdc

ON CHARACTERISTICS

| OC Current Gain Oc =50 mA, Vce =5V)

hFE

| Collector-Emitter Saturation Voltage Oc = 100 mA, Ic/Ib = 10)

VCE(sat)

100

500

300
-

DYNAMIC CHARACTERISTICS

Collector-BaseCapacitance (Vcb = 10 V, Ie = 0, f = 1 MHz)

Cch

1.1

pF
(continued)

MOTOROLA RF DEVICE DATA

2-195

LT3005

ELECTRICAL CHARACTERISTICS continued

Symbol | Min

Characteristic

Typ

| Max

Unit

FUNCTIONAL TESTS

Noise Figure, Minimum (Vce = 8 V, lc = 50 mA, f = 300 MHz)

Cutoff Frequency (Vce = 1* V, lc = 30 mA)

nfmin
fT

Maximum Unilateral Gain (Vce = 14 V, lc = 90 mA, f = 500 MHz)

Insertion Gain (Vce = 14 V, lc = 90 mA, f = 500 MHz)
Output Power (a' 1 dB Compression

GUMAX
IS21I2
po1dB

2.5

GHz
dB
dB

dBm

(Vce = 14 V, lc = 90 mA, f = 500 MHz)

Third Order Intercept (Vce = 14 V, lc = 30 mA, f = 500 MHz)

Maximum Oscillation Frequency (Vce = 14 V, lc = 90 mA)

ITO

fMAX

dBm

GHz

TYPICAL CHARACTERISTICS

E = 14V

e
en

I 40

rro

IdBC IMPRESSION

VCE

f = 500 MHz

= 14\

o
a.

I 30

100

200

150

100

150

200

lC, COLLECTOR CURRENT (mAI

t, COLLECTOR CURRENT (mA)

Rgure 1. Third Order Intercept and 1 dB Compression

Rgure 2. Gain-Bandwidth Product versus

versus Current

Collector Current

Va = 8V

GANF

v CE = 4V
f = 500 MHz

IC = 50mA

/ ' .
NF

0.1

0.2

0.3

0.5

0.7

100

150

200

!&COLLECTOR CURRENT (mA)

f. FREQUENCY (GHi)

Figure 4. Gu^^x versus Collector Current

Rgure 3. Noise Rgure and Associated Gain

versus Frequency

MOTOROLA RF DEVICE DATA

2-196

LT3005

TYPICAL CHARACTERISTICS

VCE == 8V

MMHi

5
3

100

lC, COLLECTOR CURRENT (mA)

Rgure 5. Noise Rgure versus Collector Current

s
if

100

150

200

Tr> CASE TEMPERATURE (C)

Rgure 6. Dissipation versus Temperature

:cob:

NOTE:
THIS DEVICE HAS AN
INTERNAL EMITTER
BALLAST RESISTOR
OF 1.5 OHMS

CebS

o
1.5
1.2
1

0.3

0.5

100

150

200

V^ COLLECTOR-BASE VOLTAGE (V)

lC COLLECTOR CURRENT (mA)

Rgure 7. Junction Capacitance versus Voftage

Rgure 8. Collector Saturation Characteristics

MOTOROLA RF DEVICE DATA

2-197

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

The RF Line

NPN Silicon

High Frequency Transistor

lC = 200 mA
HIGH FREQUENCY
TRANSISTOR
NPN SIUCON

... designed for ultra-linear communications or instrumentation applications. Low noise

High Gain IS21I2 = 14 dBTyp@f = 500MHz

Low Distortion ITO = 45 dBm Typ

High Output P01 dB = 26 dBm Typ @ f = 500 MHz

Hermetic Package

Gold Metallization
Diffused Ballast Resistors
CASE 401-01. STYLE 1
(GP-14 S)

MAXIMUM RATINGS

Symbol

Value

Vceo

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VebO

3.5

Vdc

Collector Current Continuous

0.2

Adc

Operating Junction Temperature

200

Tstg

-65 to +200

Rating
Collector-Emitter Voltage

Storage Temperature Range

Unit

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (lc = 5 mA, Iq = 0)

V(BR)CEO

Vdc

Collector-Base Breakdown Voltage (lc = 1 mA, Ie = 0)

V(BR)CBO

Vdc

Emitter-Base Breakdown Voltage (l = 0.1 mA, lc = 0)

V(BR)EBO

3.5

Collector Cutoff Current (Vcb = 10 V, Ie = 0)

>CBO

Vdc

/uAdc

ON CHARACTERISTICS

DC Current Gain (lc = 50 mA, Vce = 5 V)

"FE

Collector-Emitter Saturation Voltage flc = 50 mA, Iq/'b = 10>

VCE(sat)

100

500

300

j mV

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance (Vcb = 10 V, Ie = 0, f = 1 MHz)

Ccb

MOTOROLA RF DEVICE DATA

2-198

LT3014

ELECTRICAL CHARACTERISTICS continued

Symbol

Characteristic

Typ

Min

Max

Unit

FUNCTIONAL TESTS

Noise Figure, Minimum (Vce = 8 V, lc = 50 mA, f = 300 MHz)

Cutoff Frequency (Vce = 14 V, lc = 90 mA)

NFMIN

Maximum Unilateral Gain (Vce " 14 V, lc = 90 mA, f = 500 MHz)

Insertion Gain (Vce = 14 V, lc = 90 mA, f = 500 MHz)
Output Power @ 1 dB Compression
(Vce = 14 V, lc = 90 mA, f = 500 MHz)

gumax
|S2ll2

MaximumOscillation Frequency (Vce ~ 14 V,lc - 90 mA)

ITO

fMAX

PoldB

Third Order Intercept (Vce = 14 V, Ic = 90 mA, f = 500 MHz)

3.1

4.5

GHz
dB
dB
dBm

dBm

GHz

TYPICAL CHARACTERISTICS

= 14 V

vce

Vce= 14V

f = 500MH

yS^WQ '

ju 40
^*

*"ld8C0 APRESSI0N

0?
20

100

150

200

lC, COLLECTOR CURRENT (mA)

100

150

200

lC COLLECTOR CURRENT (mA|

Rgure 1. Third Order Intercept and 1 dB Compression

Rgure 2. Gain-Bandwidth Product versus

versus Current

Collector Current

Vce = 14V
VCE = 8V
ic = s )mA
3

'ANf N

i = 500MHt

/ I

12 5

0.1

0.15

0.3

0.5

0.7

f. FREQUENCY (GHz)

100

150

200

lC COLLECTOR CURRENT (mA)

Rgure 3. Noise Figure and Associated Gain

versus Frequency

Rgure4. GuMAX versusCollector Current

MOTOROLA RF DEVICE DATA

2-199

LT3014

TYPICAL CHARACTERISTICS

Vce = 8V

( = 500MHi

100

lC, COLLECTOR CURRENT (mAI

100

150

200

Tc,CASE TEMPERATURE (C|

Rgure 6. Dissipation versus Temperature

Rgure 5. Noise Rgure versus Collector Current

1 5
2 3.5 V,

3
_

2.5

Cnh

J1*

NOTE:
THISDEVICE HAS AN
INTERNALEMITTER
BALLAST RESISTOR
OF 1.5 OHMS

<*>'

1.5

0 0.3

0.5

3 4

6 8 10 15 20 25

100

150

200

lC.COLLECTOR CURRENT (mA)

Vet,, COLLECTOR-BASE VOLTAGE (V)

Rgure 8. Collector Saturation Characteristics

Rgure 7. Junction Capacitance versus Voltage

MOTOROLA RF DEVICE DATA

2-200

LT3014

S21

S11

S22

VCE

(Volts)

(mA)

(GHz)

Mag

L4>

Mag

L4>

Mag

0.1

0.78

-124

20.68

116

0.03

0.66

-71

0.2

0.76

-158

11.31

0.03

0.37

0.3

0.77

-176

7.83

0.04

0.35

0.4

0.79

172

5.92

0.04

0.35

-82
-95
-101

0.5

0.79

163

4.67

0.04

0.37

-111

0.6

0.8

154

3.92

0.04

0.38

-121

0.7

0.81

147

3.35

0.04

0.42

-124

0.8

140

2.84

0.04

0.45

-142

0.47

0.9

0.8

134

2.49

0.05

32
34

0.78

129

2.19

0.05

0.5

-150
-154

0.1

0.76

-121

0.02

0.58

-46

0.77

-151

21.95
12.27

116

0.2

0.03

0.42

-56

0.3

0.78

-164

8.38

0.03

0.38

-62

0.4

0.79

-171

6.3

0.03

0.38

-70

0.5

0.78

-173

5.01

0.03

0.44

-75

0.6
0.7

0.79

-178

4.14

0.03

0.47

-81

0.79

179

3.47

0.03

0.49

-87

0.8

0.79

176

3.02

171

2.65

0.51
0.54

-92

0.8

0.03
0.04

0.9
1

0.8

168

2.33

0.04

0.56

-104

Rgure 9. Common Emitter S-Parameters

MOTOROLA RF DEVICE DATA

2-201

-99

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

LT3046
The RF Line

NPN Silicon

High Frequency Transistor

Iq = 150 mA
HIGH FREQUENCY
TRANSISTOR
NPN SIUCON

... designed for ultra-linear communications or instrumentation applications.

Low Noise 2.5 dB Typ @ f = 200 MHz

High Gain IS21I2 = 15 dBTyp@ f = 300MHz

Low Distortion ITO = 45 dBm Typ @ f = 300 MHz

CASE 26-03, STYLE 1

(TO-46)

MAXIMUM RATINGS

Rating

Symbol

Value

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

Unit

VEBO

3.5

Vdc

Collector Current Continuous

0.15

Adc

Operating Junction Temperature

200

Tstg

-65 to +200

Storage Temperature Range

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-EmitterBreakdown Voltage (Iq = 5 mA, Iq = 0)

V(BR)CEO

Collector-Base Breakdown Voltage (lc = 1 mA, lg = 0)

V(BR)CBO

Emitter-Base Breakdown Voltage (Ie = 0.1 mA, lc = 0)

V(BR)EBO

3.5

Collector Cutoff Current (Vcb = 10 V, Ie = 0)

'CBO

Vdc
Vdc
Vdc

pAdc

ON CHARACTERISTICS

DC Current Gain (lc = 50 mA, Vce = 5 V)

Collector-Emitter Saturation Voltage (lc = 50 mA, \q/\q - 10)

VCE(sat)

70
-

100
300

300
-

DYNAMIC CHARACTERISTICS

I Collector-Base Capacitance (Vcb 1QV,Ie = Q,I 1MHz)

Ccb

1.5

PF
(continued)

MOTOROLA RF DEVICE DATA

2-202

LT3046

ELECTRICAL CHARACTERISTICS continued

Symbol

Characteristic

Typ

Min

Max

Unit

FUNCTIONAL TESTS

Noise Figure, Minimum (Vce = 8 V, lc = 25 mA, f = 300 MHz)

Cutoff Frequency (Vce = 14 V, lc = 40 mA)

nfmin

Maximum Unilateral Gain (Vce = 14 V, lc = 40 mA, f = 300 MHz)

2.5

Insertion Gain (Vce = 14 V, lc = 40 mA, f = 300 MHz)

umax
|s2il2

Output Power @ 1 dB Compression

PoldB

15.5

GHz

17.5

dBm

(VCe = 14 V, lc = 40 mA. f = 300 MHz)

Third Order Intercept (Vce = 14 V, lc = 40 mA, f = 300 MHz)

ITO

TYPICAL CHARACTERISTICS

Vc = 14V
VCE

1 = 300 MHz

TC = ?$r

= 14 V

/^Im**
g

St ,

I 2

^IdBCOl UPRESSIGN

100

150

200

lC, COLLECTOR CURRENT (mAI

100

150

200

lC, COLLECTOR CURRENT (mA)

Figure 1. Third Order Intercept and 1 dB Compression

Rgure 2. Gain-Bandwidth Product versus

versus Current

Collector Current

Vce = 8V
lC = 20mA

Ganf

WB)V

NF(c Bl
0.1

0.15

0.2

0.3

0.4

0.6

0.8

(.FREQUENCY (GHi)

100

150

200

t, COLLECTOR CURRENT (mA)

Rgure 3. Noise Figure and Associated Gain

versus Frequency

Figure 4. GUmax versus Collector Current

MOTOROLA RF DEVICE DATA

2-203

LT3046

TYPICAL CHARACTERISTICS

Vce = 8V
f = 300 MHz

100

150

200

Tc,CASE TEMPERATURE CO

t, COLLECTOR CURRENT (mA)

Rgure 6. Dissipation versus Temperature

Rgure 5. Noise Figure versus Collector Current

800

6
n:

*
<

700

*vx

600
500

ii*:

2.5

400

22
2
1.8

NOTE:
THIS DEVICEHAS AN

300

1.2
1

0 03

0.5

6 8 10 15 20125

INTERNAL EMITTER
BALLAST RESISTOR
OF 1.5 OHMS

_J
100

150

200

lC, COLLECTOR CURRENT (mA)

Vcb. COLLECTOR BASE VOLTAGE (V)

Rgure 8. Collector Saturation Characteristics

Rgure 7. Junction Capacitance versus Voltage

MOTOROLA RF DEVICE DATA

2-204

1
0>

CJ1 00

-NMWftOl^J-'-'

OO000>-JOl-2J01-i

lOBMOIOlE

jbboboo

J000>0>o>coo>

1111

u->u>MuuEa<k

AOlOlOvlOlJlOtM

AW--

'-* '-^ -

ooo0oooooo

&M->ITiOUI->ISM^

aiaia>o)MMoai(s^

1 1 1 1 1 1 1

5883S222

'ftM-IO000t"-O>-

0ooooo0opp

&U10)00M0)^Ob^

>j>j>j'jj'>i<jMrj)oi

pppopppopp

ftt>inOQMIOa

->MMNIOU6ia^
boprob>iouiigo"^L, 0>G>00O|jO>UUi.',
uos-<ogsiaaag w w m " b n 5 j

iD^aoaxt

fc<otj>j'jyo>g>*k-'

-.__._.!

nSn^-'IooSmm

ooo0oooooo

p0oooooooo
-> l o

is <n is n

_,oooopoooo
ia ix> -^ in in u u K> '--

M
o

_,ooooooooo

r->

CO
o
J>

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

LT5817
The RF Line

PNP Silicon

High Frequency Transistor

lC = -400 mA
HIGH FREQUENCY
HIGH VOLTAGE
TRANSISTOR
PNP SILICON

... specifically designed for CRT driver applications requiring high voltage and high

frequency, such as high resolution color graphics video monitors.

PNP Complement to LT1817

High Voltage V(br)cbO = -80 V Min

High Cutoff Frequency fT = 1500 MHz Min

Low Output Capacitance CCD = 2.5 pF Max 6< Vqb = -15 V

Gold Metallization

Common Base Configuration

CASE 2440-01, STYLE 2

(TO-177AI
MAXIMUM RATINGS

Rating

Symbol

Value

Collector-Emitter Voltage

Vceo

-65

Vdc

Collector-Base Voltage

VCBO

-80

Vdc

Emitter-Base Voltage

vEBO

-3

Vdc

-400

mAdc

Collector Current Continuous

Operating Junction Temperature

Storage Temperature Range

Unit

200

Tstg

-65 to +200

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (lc = -1 mA, Ib = 0)

V(BR)CEO

-65

Collector-Base Breakdown Voltage (Iq = -0.1 mA, lg = 0)

V(BR)CBO

-80

Emitter-Base Breakdown Voltage (lg = -0.1 mA, lc = 0)

V(BR)EBO

-3

Collector Cutoff Current (Vcb = -50 V. Ie = 0)

ICBO

Collector Cutoff Current (Vce = - 50 V, Vbe = m

'CES

Vdc
Vdc
Vdc

-20

/xAdc

-100

ftAdc

ON CHARACTERISTICS

DC Current Gain (lc = - 50 mA, Vce = - 5 V)

hFE

Collector-Emitter Saturation Voltage flc = - 50 mA, Ib = - 5 mA)

VcE(sat)

800

2.5

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance (Vcb = -15 V. Ig = 0, f = 1 MHz)

Ccb

FUNCTIONAL TESTS

Cutoff Frequency (Vce = -15 V, lc = -50 mA, f = 200 MHz)

Insertion Gain (Vce = -15 V, lc = - 50 mA, f = 200 MHz)

1.5

IS21!2

MOTOROLA RF DEVICE DATA

2-206

GHz
dB

LT5817

TYPICAL CHARACTERISTICS

vce

-10 V

o = 250 MHl2

-400

-10

-20

-30

-40

-50

-60

-70

Vce, COLLECTOR-EMITTER VOLTAGE (V)

-' 0.5

Figure 3. Safe Operating Area

-20

-40

-60

-80

-100

-120

lC. COLLECTOR CURRENT (mAI

Figure 1. Gain Bandwidth Product versus

Collector Current

S 35
a

I 2.5

5
1
5

-0

-2

-4

-6

-8

-10

-12

-14

-16

VCb. COLLECTOR-BASE VOLTAGE (V)

Rgure 4. Junction Capacitance versus Voltage

100

150

200

TC, CASE TEMPERATURE CC)

Figure 2. Power Dissipation versus Temperature

MOTOROLA RF DEVICE DATA

2-207

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

LT5839
The RF Line

PNP Silicon

High Frequency Transistor

lC = -300 mA
HIGH FREQUENCY
HIGH VOLTAGE
TRANSISTOR
PNP SILICON

... specifically designed for CRT driver applications requiring high frequency and high
voltage, such as high resolution color graphics video monitors.
PNP Complement to LT1839

High Voltage V(br)CBO = -80 V Min

High Cutoff Frequency fT = 1500 MHz Min

Low Output Capacitance CCD = 2.5 pF Max ( Vcb = -15 V

Gold Metallization

CASE 79-04, STYLE 1

(TO-39)

MAXIMUM RATINGS

Rating

Symbol

Value

Collector-Emitter Voltage

VcEO

-65

Vdc

Collector-Base Voltage

VcBO

-80

Vdc

Emitter-Base Voltage

Unit

VEBO

-3

Vdc

Collector Current Continuous

-300

mAdc

Operating Junction Temperature

200

Tstg

- 65 to + 200

Storage Temperature Range

ELECTRICAL CHARACTERISTICS
Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (lc = -1 mA, Ib = 0)

V(BR)CEO

-65

Collector-Base Breakdown Voltage (lc = -0.1 mA, lg = 0)

V(BR)CBO

-80

Emitter-Base Breakdown Voltage (Ie = -0.1 mA, lc = 0)

V(BR)EBO

-3

Collector Cutoff Current (Vcb = - 50 V, lg = 0)

ICBO

Collector Cutoff Current (Vce = -50 V, Vbe = 0)

'CES

Vdc
Vdc
Vdc

-20

pAdc

-100

txAdc

ON CHARACTERISTICS

DC Current Gain (lc = -50 mA, Vce = -5 V)

hFE

Collector-Emitter Saturation Voltage 0c = - 50 mA, Ib = - 5 mA)

VCE(sat)

20
-

800

2.5

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance (Vcb = -15 V, lg = 0, f = 1 MHz)

Ccb

FUNCTIONAL TESTS

Cutoff Frequency (Vce = -10 V, lc = -50 mA, f = 250 MHz)

Insertion Gain (Vce = -10 V, lc = -50 mA, f = 200 MHz)

1.5

|S21I2

MOTOROLA RF DEVICE DATA

2-208

GHz
dB

LT5839

TYPICAL CHARACTERISTICS

vce = -1 ov
0 =-- 250 MHz

| -300

1.5

-200
oc

8
3-iod
o

-0

-10

-20 -30

-40 -50

-60 -70

Vce. COLLECTOR-EMITTER VOLTAGE (V)

Rgure 2. Safe Operating Area

-20

-40

-60

-80

-100

-120

lC, COLLECTOR CURRENT (mA|

Rgure 1. Gain Bandwidth Product versus

Collector Current

i
3
o

-5

-10

-15

-20

-25

-30

Vcb, COLLECTOR-BASE VOLTAGE (V)

Rgure 4. Junction CapacKance versus Voltage

100

150

200

Tc, CASE TEMPERATURE CO

Figure 3. Power Dissipation versus Temperature

MOTOROLA RF DEVICE DATA

2-209

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MD4957

The RF Line
MULTIPLE DEVICES

DUAL PNP SILICON

AMPLIFIER

DUAL PNP SILICON ANNULAR 450 MHz AMPLIFIER

... designed for high-gain, low-noise amplifier, oscillator, and
mixer applications.

Low Noise Figure NF = 3.0 dB (Typ) <S 450 MHz

6.0 dB (Typ) (a 1.0 GHz

High Power Gain Gpe = 18 dB (Typ) (a 450 MHz

13 dB (Typ) (a 1.0 GHz

High Gain-Bandwidth Product fr = 1500 MHz (Typ)

Low Collector-Base Capacitance CCD = 0.8 pF (Typ)

MAXIMUM RATINGS (each side)

Rating

Symbol

Value

Unit

VCEO

Vdc

Collector-Base Voltage

VCB

Vdc

Emitter-Base Voltage

veb

3.0

Vdc

mAdc

Tj. T8tg

-65 to +200

Collector-Emitter Voltage

Collector Current

Operating and Storage Junction

STYLE1:
PIN I. COLLECTOR

Temperature Range

Total Device Dissipation @ T/\ - 25C

Derate above 25C

2. BASE
3. EMITTER
4 OMITTED

One

Both

Side

Sides

200

400

1.15

2.3

mW/X

5. EMITTER
6. BASE
7. COLLECTOR
8. OMITTED

HGURE 1 NOISE FIGURE (TYPICAL) versus FREQUENCY

9
8

KUlttlETERS

vce = wv*

lC = 2.0mA

A
B

C
D
E
F
G

5
4

J
K

I
M
N
P

Mm
8.51
7.7S
4.19
0.41

MAX
9.40
8.51
4.70
0.53

1.02
0.41
0.43
5.CSBSC
0.71
074

12.70
635

0.86
1.14

45* BSC
254 BSC

1 177

INCHES
KM
0335
O30S
0165
0016
_

0.2

0.3

0.4

0.5

0750
45'BSC
0.100 BSC

CASE 65442

f, FREQUENCY (GHz)

MOTOROLA RF DEVICE DATA

2-210

0.040

0.015
0.019
0700 BSC
0034
0.028
0.029
0045
0.590

0.1

MAX
0.370
0.335
0.185
0021

1 0050

MD4957

ELECTRICAL CHARACTERISTICS (Ta = 25Cunless otherwise noted)

Characteristic

Symbol

Min

V(BR)CEO

Vdc

V(BR)CBO

Vdc

V(BR)EBO

3.0

Vdc

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

C = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage

(lC = 100 fiAdc. Ie = 0)

Emitter-Base Breakdown Voltage

(IE = 100 ftAdc. lc = 0)

Collector Cutoff Current

<CBO

"FE

1000

0.1

/iAdc

(Vcb = 20 Vdc, l = 0)
ON CHARACTERISTICS
DC Current Gain

150

Uc = 2.0 mAdc, Vce = 10 Vdc)

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product

1500

MHz

(lC = 2.0 mAdc. Vce = 10 Vdc, f = 100 MHz)

Collector-Base Capacitance

Ccb

0.8

1.5

(Vcb = 10 Vdc, l = 0. f = 100 kHz)

Small-Signal Current Gain
(lC = 2.0 mAdc, Vce = 10 Vdc. f = 1.0 kHz)

hfe

Collector-Base Time Constant

'b'Cc

3.0

200

(l = 2.0 mAdc, Vcb = 10 Vdc, f = 63.6 MHz)

Noise Figure

(lC = 2.0 mAdc, Vce = 10 Vdc, f = 450 MHz) Figure 2

(lC = 2.0 mAdc, Vce = 10 Vdc, R$ = 50 Ohms, f = 1.0 GHz)

6.0

FUNCTIONAL TESTS

Gpo

Common-Emitter Amplifier Power Gain

(Vce = 10 Vdc, lc = 2.0 mAdc, f = 450 MHz)

(Vqe - 10 Vdc, lc = 2.0 mAdc, Rs = 50 Ohms, f = 1.0 GHz)

dB
18

RGURE2 - NOISERGUREANDPOWERGAINTESTCIRCUIT

. vou,

|OHf50"
0.4-6.0 pF

'Button type capacitors

"Variable air piston type capacitors
1. LI silver plated brass bar, 1.0
in. Ig by 0.25 in od.
2. L2 sliver plated brass bar, 1.5
in. Ig by 0.25 in od. Tap is
0.25 in. from collector

3. L3 Viturn of AWG No. 16 wire

0.25 in. from and parallel to
L2.

4. The noise source is a hot-cold body

(All type 70 or equivalent) with a

test receiver (All type 136 or
equivalent).
5. Each half of dual transistor

tested separately.

MOTOROLA RF DEVICE DATA

2-211

MD4957

COMMON EMITTER Y PARAMETER VARIATIONS

Y PARAMETERS VS FREQUENCY

Y PARAMETERS VS CURRENT

VCE =10 Vdc

lc = 2.0 mA

VC = 10Vic

Vce = 15Vdc
f = 450 MHz

FIGURE 3 - INPUTADMinANCE

RGURE 7 - INPUT ADMinANCE

_bi

8 M
1 12

b..

i w

4*^

fc.

*"" 20
0

RGURE4 - FORWARDTRANSFER ADMinANCE

RGURE 8 - FORWARD TRANSFER ADMITTANCE

Ci.

-tx.

40
.

-b..
RGURE 5 - OUTPUT ADMITTANCE

RGURE 9 - OUTPUT ADMrTTANCE

*_
..

RGURE 10- REVERSETRANSFffl ADMrTTANCE

RGURE S - REVERSETRANSFH ADMITTANCE

_b
IU

-b

I|
-=rf

1=^

0.01
08

-fc.

<00l
06

200

300

4.0

6.0

l COLLECTOR CURRENT ImA)

I. FREQUENCY IMHil

MOTOROLA RF DEVICE DATA

2-212

8.0

MD4957

COMMON BASE Y PARAMETER VARIATIONS

Y PARAMETERS versus CURRENT

Y PARAMETERS versus FREQUENCY

VCB=10Vde

VCB= 10Vdc

lc = 2.0mA

Vca= 15Vdc f = 450 MHz

RGURE 15- INPUT ADMinANCE

FIGURE11 - INPUTADMrTTANCE
80

1 70
I 60

INPUT ADMinANCE

1 60

- _,.!

^^"

M so

fcb

I 40
| 30

^"*"

J 20

....

-D,b

1 20
-6*

*? 10
0

RGUREIS- FORWARD TRANSFER ADMinANCE

RGURE12 - FORWARD TRANSFER ADMITTANCE

I M

, ___

1 70

-In.

% 60

^/i>

ftlk

25 40

40
-grt

I 30
^

bit

f 10
^

0
RGURE 17- OUTPUT ADMinANCE

RGURE 13 - OUTPUT ADMinANCE

tlnh
b.b

E 2.0

RGURE 18-REVBISETRANSFER ADMinANCE

RGURE 14- REVERSE TRANSFER ADMinANCE

-ft*

0.6

rtf""1 -

-ft*

| os

0.4

1 03
-fcl

0.01

e
200

0
2.0

300

4.0

6.0

I,. COLLECTOR CURRENT ImA)

f. FREQUENCY IMtb)

MOTOROLA RF DEVICE DATA

2-213

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MM4018

The RF Line
lC = -400 mA
RF POWER
TRANSISTOR
PNP SILICON

PNP SILICON RF POWER TRANSISTOR

... designed for amplifier, frequency multiplier or oscillator appli

cations in military and industrial equipment. Suitable for use as

Class A, B, or C driver, or pre-driver stages in VHFapplications.

Power Output Pout = 0.5 W (Min) (a f = 175 MHz
High Current-Gain Bandwidth Product

fj = 900 MHz(Typ) (a \q = -50 mAdc

MAXIMUM RATINGS

Rating

Symbol

Value

VCEO

-20

Vdc

Collector-Base Voltage

VCB

-40

Vdc

Emitter-Base Voltage

Vdc

Collector-Emitter Voltage

Unit
STYLE1:

Veb

-4.0

Collector Current Continuous

-0.4

Adc

Total Device Dissipation (a Jq = 25C

5.0

Wans

28.6

mW/C

Tj. Tstg

-65 to +200

Derate above 25C

Operating and Storage Junction

Temperature Range

FIGURE 1 - 175 MHz OUTPUT POWER TEST CIRCUIT

PIN 1.EMITTER

NOTES:

1. DIMENSIONING ANDT0LERANONG PERANSI

Y14.5M,1932.
2. CONTROLLING DtVENSION:INCH.
3. DIMENSION J MEASURED FROMDIMENSION A
MAXIMUM.
4. DIMENSION B SHALL NOTVARY MORE THAN0.25
100101 IN ZONE R. THIS ZONE CONTROLLED FOR
AUTOMATIC HANDLING.
5. DIMENSION F APPLIES BETWEEN DIMENSION P
AND L DIMENSION0 APPLIESBETWEEN
DIMENSION I ANDK MINIMUM. LEAD DIAMETER
IS UNCONTROLLED IN DIMENSION P AND
BEYOND DIMENSION K MINIMUM.

DM
A
B

RG'SOft

C
0

.[Up

2 BASE

1COLLECTOR I I<>">'' M lH|

E
f

KUJMETERS
KM
MAX
8.51
?
7.75
850
6.10
6.60

J
K

L
M
P

C1.C2

3.0-30pF.AHC0 461 OR EQUIVALENT

C3.C4
LI
L2
L3

8.0-80 pF.ARCO 462 OR EQUIVALENT

100nH,4 TURNSNO.18 AWG. 1/4" I.D.,5/8" LENGTH
40 nH. 2 TURNSNO. 18 AWG.1/4" I.D.. 1/2" LENGTH
200 nH. 8 TURNSNO. 18 AWG.1/4" 1.0.. 7/8" LENGTH

MOTOROLA RF DEVICE DATA

2-214

MAX
0370

0.305

0.335
0260
0.021
0041

0.240
0.016
0009

0.41

0.23
0.41

1.04

0.72

OSS

0.028

0034

0.74

1.14

0.029
0.500
0250

0045
0.750

043
5.03 BSC

q
H

mcKES
MM
0.335

12.70
l?
635
45* BSC
1.27

2.54

CASE 79-04
TO-205AD

(TO-39)

0.016
0019
020Q BSC

45" BSC

0.100

0050
-

MM4018
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic

Typ

| Max

| Unit |

Symbol

Min

V(BR)CEO

-20

Vdc

V(BR)CBO

-40

Vdc

V(BR)EBO

-4.0

Vdc

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC = -5.0 mAdc, Ib = 0)

Collector-Base Breakdown Voltage

(lC = -5.0 mAdc, Ie = 0)

Emitter-Base Breakdown Voltage

HE = -1.0 mAdc, lc = 0)
Collector Cutoff Current

'CEO

-20

fiAdc

-0.1

mAdc

-10

(iAdc

(Vce = -15 Vdc, Ib = 0)

Collector Cutoff Current

>ces

(Vce = -40 vdc, Vbe = o)

Collector Cutoff Current

ICBO

(vCb = -15 Vdc, Ie = o)

ON CHARACTERISTICS
DC Current Gain

"FE

dC = -50 mAdc, Vce = -5.0 Vdc)

DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product

900

3.5

MHz

dC = -50 mAdc, Vce = ~15 Vdc, f = 200 MHz)

Output Capacitance

Cob

(Vcb = -125 Vdc, Ie = 0, f = lOO kHz)

FUNCTIONAL TESTS

Power Output (Figure 1)

Pout

0.5

Watt

(Pin = 50 mW. Vce = -12.5 Vdc, f = 175 MHz)

Collector Efficiency (Figure 1)

(Pj = 50 mW, Vce = -12.5 Vdc, f = 175 MHz)

HGURE 3 PARALLEL EQUIVALENT OUTPUT

CAPACITANCE versus FREQUENCY

HGURE 2 POWER OUTPUT versus POWER INPUT

0.7

5> 0.6

+ 20

Vce = -12.5 Vdc

Vce = -12-5 Vdc

0.5

+10

75 MHz

| 0.4
2 0.3
pout

150

100

Pjn. POWER INPUT ImWI

HGURE 5 PARALLEL EQUIVALENT INPUT

CAPACITANCE versus FREQUENCY

RESISTANCE versus FREQUENCY

+ 100

VCC= -12.5 V

Vrx= -12.5 Vdc

% +50

300

f. FREQUENCY IMHz)

RGURE 4 PARALLEL EQUIVALENT INPUT

200

= 0.5 W

a
z

8 30
UJ

J? -50

pout == 0.5

pout == 0.5W

100

^ 10

150
150

200

300

150

200

(.FREQUENCY (MHz)

f, FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-215

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MM4049

MMC4049
MRF534
MRF536

The RF Line

PNP SILICON HIGH-FREQUENCY TRANSISTORS

... designed for use as a high-frequency current mode switch.

Because of the extremely high Current-Gain Bandwidth this
transistor also makes an excellent RF amplifier and oscillator.
High Current-Gain Bandwidth Product

fj = 4.0 GHz (Min) <</ \q = -20 mAdc MM4049, MRF534

fj - 5.0 GHz (Min) (a \q = - 20 mAdc MRF536

Iq = -30 mA

Low Collector-Base Capacitance

HIGH FREQUENCY
TRANSISTORS

CCD - 1.25 pF (Max) f VqB " ~50 Vdc

PNP SILICON

MMC4049

j B

MM 1049

MRF534

Case 20-03

Case 22-03
TO-206AA

Case 317-01

Style 1

Style 2

TO-2 06AF

Chip

MAXIMUM RATINGS

Ratings

MRF536

Styl e

Symbol

Macro-X

Values

Unit

Collector-Emitter Voltage

vCEO

-10

Collector-Base Voltage

vCBO

-15

Vdc

Emitter-Base Voltage

vEBO

-4.5

Vdc

Collector Current Continuous

-30

mAdc

Total Device Dissipation @ T/\ = 25C

300

200

300

Tj max=200T

1.14

1.71

2.40

mW/C

-65 to *200

-65 to +200

-65 to *200

-65 to -150

Derate above 25C

Operating and Storage junction

Temperature Junction

TJ. Tstg

MOTOROLA RF DEVICE DATA

2-216

Vdc

MM4049, MMC4049, MRF534, MRF536

ELECTRICAL CHARACTERISTICS |TA = 25C unless otherwise noted)
Symbol

Characteristic

Typ

Min

Uni* 1

Max

OFF CHARACTERISTICS
Vdc

V(BR)CEO

Collector-Emitter Breakdown Voltage

(lC = -2.0 mAdc. In. = 0)

V(BR)CBO

Collector-Base Breakdown Voltage

(lc = -IQOuAdc. IE = 0)
Emitter-Base Breakdown Voltage

V(BR)EBO

(Ig = -100 nAdc. |C = Q)

ICBO

Collector Cutoff Current

(VCB = -10Vdc,lE =
ON CHARACTERISTICS
OC Current Gain

200

hFE

4.0

(lC = - 25 mAdc, Vce = " 2.0 Vdc)

DYNAMIC CHARACTERISTICS

Current-Gain Bandwidth Product

MRF534, MM4049

(lC = -20 mAdc, Vce = -5.0 Vdc, f = 500 MHz)

MRF536

GHz

5.0

Collector-Base Capacitance

Ccb

1.3

(Vcb = -5.0 Vdc, Ie = 0, f = 1.0 MHz)

FUNCTIONAL TESTS
MAG

Maximum Available Gain

(lC = -15 mAdc, Vce = - 5.0 Vdc, f = 500 MHz)

MRF534

(Iq = -15 mAdc, Vce = - 5.0 Vdc, f = 500 MHz)

MM4049

11.5

MRF536

8.5

I {Iq - -15 mAdc, Vce

- 5.0 Vdc, f = 1.0 GHz)

RGURE 2 MAXIMUM AVAILABLE GAIN versus

COLLECTOR CURRENT

FIGURE 1 CURRENT-GAIN BANDWIDTH

PRODUCT versus CURRENT

Vce = -5.ov

u, 14
i

MRF534 MM4IVW

MRF534500Mrte

1 12

MRF536

MRF5361.0GH2

r^.

8.0
2 6.0
s

Vce = -5.0 V

o" 4.0

f = 1.0 GHt

= 2.0

1
-5

-10

-15

-20

-5.0

-25

FIGURE 3 NOISE FIGURE versus FREQUENCY

vCF = -5.0 V
IC= -3.0m/\
8.0

MRF534
o

-10

-15

lC. COLLECTOR CURRENT (mA)

Iq.COLLECTOR CURRENT (mAdc)

4.0
MRF536
M W4049

0.2

0.4

0.6

f. FREQUENCY (GHz)

MOTOROLA RF DEVICE DATA

2-217

-20

MM4049, MMC4049, MRF534, MRF536

MRF534 COMMON-EMITTER S-PARAMETERS

S11

S21

S12

S22

vce

(Volts)

(mA)

(MHz)

isl

L<t>

|S21I

|SI

IS22I

-5.0

200

0.734

-22

3.70

126

0.066

0.507

-39

-10

-20

-10

-5.0

-10

-20

400

0.580

-28

2.56

108

0.116

0.409

-48

600

0.444

-37

2.09

0.158

0.403

-52

800

0.400

-47

1.80

0.195

0.364

-56

1000

0.366

-47

1.55

0.234

0.348

-69

200

0.645

-27

5.36

124

0.058

0.394

-43

400

0.503

-33

3.44

106

0.109

0.316

-52

600

0.376

-43

2.68

0.153

0.323

-52
-55

800

0.333

-54

2.24

0.192

0.290

1000

0.295

-54

1.91

0.233

0.276

-71

200

0.586

5.90

122

0.053

0.338

-52
-60

400

0.454

-28
-34

3.73

105

0.099

0.259

600

0.329

-46

2.87

0.143

0.267

-58

800

0.289

-59

2.38

0.181

0.240

-59

1000

0.248

-58

2.04

0.221

0.235

-75

200

0.752

-21

4.28

125

0.066

0.550

-28

400

0.624

107

0.123

0.495

-38

0.512

-26
-34

2.77

600

2.19

0.168

0.503

-44

800

0.476

-44

1.86

0.207

0.464

-51

1000

0.447

-45

1.60

0.246

0.443

-64

200

0.685

-24

5.47

123

0.060

0.442

-33

400

0.553

-28

3.46

105

0.113

0.385

-42

600

0.433

-37

2.68

0.156

0.397

-46

800

0.391

-49

2.25

0.194

0.362

-51

1000

0.359

-47

1.92

0.233

0.342

-65

200

0.621

-26

6.38

121

0.055

0.372

-40

400

0.488

-31

3.97

104

0.103

0.316

600

0.365

-41

3.04

0.145

0.332

-50

800

0.323

-52

2.51

0.182

0.301

-54

1000

0.290

-50

2.13

0.219

0.288

-68

-48

MM4049 COMMON-EMITTER S-PARAMETERS

S21

S22

Sl2

Vce

(Volts)

(mA)

(MHz)

IS11I

L4>

fell

IS12I

IS22I

-5.0

200

0.634

-31

6.37

120

0.060

0.711

-23
-30

0.469

-34

0.107

0.602

600

0.379

-40

2.90

0.147

0.587

-33

800

0.368

-51

2.32

0.183

0.550

-36

1000

0.381

-54

1.93

0.223

0.528

-44

400

-10

-20

-10

-5.0

-10

-20

3.95

200

0.523

-29

7.79

112

0.056

0.632

-23

400

0.418

-28

3.74

0.104

0.543

-29
-32

600

0.344

-34

3.20

0.146

0.542

800

0.345

-46

2.54

0.184

0.513

-34

1000

0.366

-50

2.09

0.225

0.493

-42

200

0.454

-25

8.43

106

0.065

0.584

-21

400

0.390

-23

4.67

0.105

0.513

-27

600

0.325

-30

3.31

0.148

0.620

-30

800

0.327

-44

2.61

0.188

0.497

-32

1000

0.351

-48

2.15

0.231

0.476

-41

200

0.731

-25

5.83

121

0.053

0.736

-18

400

0.589

-30

3.65

0.096

0.654

-26

600

0.502

-38

2.71

0.132

0.645

-29

800

0.496

-49

2.21

0.164

0.612

-33

1000

0.499

-54

1.83

0.198

0.592

-42

200

0.643

-25

7.37

114

0.668

-18

400

0.542

-27

4.28

0.051
0.094

0.600

-25

600

0.466

-34

3.10

0.132

0.603

-28

800

0.465

-46

2.49

0.166

0.577

-31

1000

0.476

-51

2.05

0.202

0.557

-40

200

0.570

-23

8.44

109

0.049

0.621

-18

400

0.496

-24

4.73

0.093

0.562

-24

600

0.427

-31

3.38

0.131

0.572

-27

800

0.427

-43

2.69

0.165

0.551

-30

1000

0.445

-47

2.21

0.203

0.532

-38

MOTOROLA RF DEVICE DATA

2-218

MM4049, MMC4049, MRF534, MRF536

MRF536 COMMON-EMITTER S-PARAMETERS
S 1

(mA)

(MHz)

ISllI

<l>

S21

IS12I

-5.0

400

0.401

-74

5.38

108

0.090

5.0

-10

-20

-10

5.0

-10

</>
54

!S22l

. </

0.490

-48
64

800

0.181

102

3.03

0.138

0.350

1200

0.136

157

2.13

0.181

0.320

1600

0.151

175

1.68

0.210

0.270

2000

0.160

1.44

0.240

0.269

-100

400

0.289

-94

6.58

103

0.076

0.379

-56

148

800

0.140

-137

3.55

0.122

0.266

-73

1200

0.174

169

2.46

0.165

0.238

-77

1600

0.196

154

1.93

0.196

0.198

2000

0.227

130

1.65

0.230

0.202

-110

400

0.233

-118

7.28

0.066

0.296

-65

800

0,163

169

3.88

0.110

0.204

0.153

0.179

0.143

1200

0.233

156

2.65

1600

0.253

144

2.06

0.185

2000

0.290

1.75

0.220

0.160

-121

400

0.478

-54

5.14

109

0.0S6

0.535

-39

800

0.279

-66

2.90

0.141

0.420

1200

0.166

-97

2.08

0.184

0.388

0.330

123

1600

0.151

-123

1.67

0.209

2000

0 1 10

158

1.44

0.243

0.313

-90
-47

400

0.356

6.59

105

0.075

0.418

800

0.182

3.59

0.125

0.311

1200

0.119

141

2.53

0.166

0.284

-67

1600

-20

S22

S12

S21

vce
(Volts)

0.131

166

-62

2.00

0.193

0.230

-76

0.226

0.222

-98

2000

0.135

154

1.72

400

0.260

7.66

101

0.066

0.328

800

0.124

122

4.09

0.111

0.236

-69

1200

0.148

172

2.83

0.152

0.216

-71

1600

0.172

158

2.22

0.182

0.172

2000

0.201

130

1.88

0.214

0 17 1

104

MMC4049 CHIPTOPOGRAPHY

Nominal Chip Size: 12 x 22 mils

Front Metalization: Aluminum
Back Metalization: Aluminum
Emitter/Base Bond Pad. 4.0 * 4.0 mils

"Emitter Fingers: 2
((Base Fingers: 3

MOTOROLA RF DEVICE DATA

2-219

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MM8000

MM8001

The RF Line
NPN SILICON
AMPLIFIER

TRANSISTORS
NPN SILICON HIGH-FREQUENCY TRANSISTOR

.. . designed for high-frequency C.A.T.V. amplifier applications. Suit

able for use as output driver or pre-driver stages in VHF and UHF
equipment.
High Current-Gain-Bandwidth Product -

fT = 900 MHz (Min) @ lC = 50 mAdc (MM8001)

Low Output Capacitance
Cob = 3.5 pF (Max) @ Vcb = 30 Vdc
Low Noise Figure NF = 2.7 dB (Typ) @ \q = 10 mAdc

NOTES

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current

Total Device Dissipation (u Trj = 25CC

Symbol

Value

Unit

3 DIMENSION J MEASURED FROM 0IMENSI0N A

MAXIMUM.

vCEO

Vdc

4 DIMENSION B SHALL NOT VARYMORE THAN 0 25

10.0101IN ZONE R THIS ZONE CONTROLLEDFOR

VCB

Vdc

AUTOMATICHANDLING
5 DIMENSION F APPLIES BETWEEN DIMENSIONP

VEB

3.5

Vdc

AND L. 0IMENSI0N D APPLIES BETWEEN

0.4

Adc

IS UNCONTROLLEDIN DIMENSION P AND

BEYOND DIMENSION X MiNlMuM

3.5

Watts

mW.C

-65 to -200

Derate above 2B"C

Operating and Storage Junction

t. DIMENSIONINGAND T0LERANCING PER ANSI

YU5M. 1982
2 CONTROLLINGDIMENSION INCH

Tj. TS,g

DIMENSION L ANDK MINIMUM LEAD DIAMETER

Temperature Range

MIN

MIS

8 SI

939

0 335

B
C

775 [ 8S0

3 33!

6 to

660

041

053

:oie

3 021

E
F

023

104

C 009

OKI

041

3 48

0016

0 019

H
J

1
M
P

:.:.

086
114

635
45- BSC
127

254

TO-205AD

ITO-39)

::::

C 200 BSC

5 08 BSC
072
0.74

CASE 79-04

2-220

MAX
...

MOTOROLA RF DEVICE DATA

I-.C HES

Millimeters

DIM

0O28 ' 0034

0029

3 04!

' :

45
-

0100

BSC
0 050

- 1

MM8000, MM8001
ELECTRICAL CHARACTERISTICS (Tc = 25C unlessotherwise noted)
Symbol

Min

Collector-Emitter Sustaining Voltage

(lC = S.0 mAdc, Ib = 0)

VCEO(sus)

Vdc

Collector-Base Breakdown Voltage

(lC = 0.1 mAdc, Ig = 0)

V(BR)CBO

Vdc

Emitter-Base Breakdown Voltage

V(BR)EBO

3.S

Vdc

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS

(Ig = 0.1 mAdc, lc = 0)

Collector Cutoff Current

<CE0

pcAdc

(Vce = 28 Vdc, Ib = 0)
ON CHARACTERISTICS

DC Current Gain

dC = 50 mAdc, Vce

"FE

IS Vdc)

DYNAMIC CHARACTERISTICS

Current-Gain Bandwidth Product

MHz

(lC = 25 mAdc, VCE = 15 Vdc, f = 200 MHz)

(lC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)

(lC = 100 mAdc, Vce = 15 Vdc, f = 200 MHz)

MM8000

550

MM8001

700

MM8000

700

MM8001

900

MM8000

700

MM8001

300

Output Capacitance
(Vcb b so vdc, Ie = o, f = i.o mhz)

Cob

Noise Figure
Figure 1
(lC = 10 mAdc, Vce 15 Vdc, f = 200 MHz)

3.5

2.7

11.4

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

Gpe

Figure 1

(lC = 10 mAdc, Vce = 15 Vdc, f = 200 MHz)

FIGURE 1 -

200 MHz TEST CIRCUIT

Pin (Rg-SOn)

Pout (Zl-S0

Cl.C2.C3: 1.0 - 30 pF
C: 1.0-MpF
C5: 10.000 pF
C6.C7: 1000 pF
Cs: 0.01 pF

Li: 4-1/2 tuna. No. 22

AWG wirt. 3/t6" I.D.

L4: 3-1/2tuna. No. 22

AWGwirt. 3/16" I.D.

L2.L3: 0.82 itH HFC

Ft): 240ohm*,2mxm

6-VEE

+VCC

MOTOROLA RF DEVICE DATA

2-221

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MM8009

The RF Line
0.9 W-1.0 GHz

RF POWER
TRANSISTOR
NPN SILICON

NPN SILICON RF POWER TRANSISTOR

... designed for amplifier, frequency multiplier, or oscillator applica

tions in military and industrial equipment. Suitable for use asoutput,
driver, or pre-driver stages in UHF equipment and as a fundamental
frequency oscillator at 1.68 GHz.

i-LJ

High Output Power - Pout = 0.9 Watt (Min) @f = 1.0 GHz

High Current-Gain-Bandwidth Product -

Ideal for Radiosonde Applications -

fj = 1000 MHz <Min) @ Iq = 50 mAdc

Pout (Oscillator) = 300 mW (Typ) @ f = 1.68 GHz

NOTES

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage

MAXIMUM.

Symbol

Value

Unit

VcEO

Vdc

VCB
veb

Vdc

3.0

Vdc

Collector Current Continuous

400

mAdc

Total Device Dissipation @T^ 25C

1.0

Watt

5.71

mW/C

Collector-Base Voltage
Emitter-Base Voltage

Derate above 25C

Total Device Dissipation @Tq 25C

4 (XMENSI0N B SHAU NOT VARY MORETHAN0 25

(0 0101INZONER. THISZONECONTROLLED FOR
AUTOMATICHANDLING
5 DIMENSIONF APPLIESBETWEENDIMENSION P
AND L DIMENSION0 APPLIESBETWEEN
DIMENSIONL ANDK MINIMUM.LEADDIAMETER

IS UNCONTROLLED INDIMENSION P AND

BEYONDDIMENSIONK MINIMUM.

MILLIMETERS
MIN
MAX
851
939

DIM
A

Derate above 25C

Operating and Storage Junction

Temperature Range

"*>-'

1 DIMENSIONING ANDT0LERANCING PERANSI

Y145M. 1982
2. CONTROLLING DIMENSION INCH
3. DIMENSIONJ MEASUREDFROM DIMENSION A

TJTstg

3.5

Watts

mW/C

c
0
E
F

-65 to +200

6
H

7.75

850

610
041

660

023

104

041

048

053

5 08 BSC
072

086

074

114

12.70

1905

6.35

M
9
R

127

254

(TO-39)

2-222

MAX
0370
0335
0260

0016
0021
0041
0009
0016
0019
020C BSC
0034
0028

0.029
0500

0045

0.750

0250

45 BSC

CASE 79-04
TO-205AD

MOTOROLA RF DEVICE DATA

INCHES
Mm
0335
0305
0240

45'BSC
-

0100

0050
-

MM8009
ELECTRICAL CHARACTERISTICS (Tc = 25C unlessotherwisenoted)
Characteristic

Symbol

Min

V(BR)CB0

V(BR)EBO

3.0

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

Vdc

(lC-100nAdc, lE-0)
Emitter-Base Breakdown Voltage

Vdc

(le100*iAdc, lc-0)
"CEO

Collector Cutoff Current

100

uAdc

(Vce-15 Vdc. 'B">

CES

Collector Cutoff Current

(Vce - 35 Vdc, VBE " 0)

ON CHARACTERISTICS
DC Current Gain

hFE

1000

(lC - 100 mAdc, VCe 5.0 Vdc)

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product

MHz

(lC - 50 mAdc, VCE 15 Vdc'f " 10 MHz>

Cot

Output Capacitance

2.3

(VCB" 30 Vdc, Ig - 0, f - 1.0 MHz)

3.0

FUNCTIONAL TEST

Power Output

(Figure 1)

pout

0.9

Wan

(Pm- 316 mW, Vce " M v<Jc- ** 1- GHz*

Power Output (Oscillator) (Figure 21

0.3

pout

Watt

(Vce " 20 Vdc, Veb - 1-5Vdc, f - 1.68GHzl

(Minimum Efficiency -15%)
Collector Efficiency

FIGURE 1 -

(Pin - 316 mW, Vce " 28 Vdc, f - 1.0 GHz)

1.0 GHz POWER AMPLIFIER TEST CIRCUIT

FIGURE 2 - 1.68 GHz POWER OSCILLATOR TEST CIRCUIT

Vce*M V
IloirtoBim
Tttbo

i-o.osr
(R-2.SS

L-RFC1U.3SH
CI - 0.4 F - ta pF Mum 4SH

tt6"50f

CJ-UpF IOpFJgkni4ia
CS.C4-pfFMMra
n-nOMaPMflSMam)

8o*dii

Zl
Zl

0.2JO"I.O" I

Tillon

O.I2S-H.0"( ,.aoeo<R 2.5S

Q. IMUON

JSotuu
ti.tj If krotab OwWt Slab Twin.
BiuTm; Micro!* OSN. w EquMtnt
R

MOTOROLA RF DEVICE DATA

2-223

MM8009

FIGURE 3 - POWER OUTPUT versus POWER INPUT

FIGURE 4 - POWER OUTPUT versus FREQUENCY

1
VCE-28 Vdc
I- 1.0 GHi

vce * m vac
Pjn*3t0mW

S
S

0.5

0.2

0.7

Pin.POWER INPUT(WATTS)

0.B

I. FREQUENCY (GHz)

FIGURE 5 - POWER OUTPUT versus VOLTAGE

FIGURE 6 - OSCILLATOR POWER OUTPUT versus CURRENT

0.5

1-1.0 GHi

* 0.8

vce- 24 V

= 1.68

Pjn-OIIW

'CE'ZOV;

S0.4

0.3

r>
o
cc

0.2
o

5.0

VCE.COLLECTOR EMITTER VOLTAGE (VOLTS)

100

lC. COLLECTOR CURRENT(mAdc)

FIGURE 7 - CURRENT-GAIN-BANDWIDTH PRODUCT

FIGURE 8 - OUTPUT CAPACITANCE versus VOLTAGE

CE-15 Vdc

'E* n

% 3.0

5.0

lC. COLLECTOR CURRENT (mAdc)

VCB.COLLECTOR-BASE VOLTAGEIVOLTSI

MOTOROLA RF DEVICE DATA

2-224

MMBR536L (See MPS536)

MMBR571L (See MPS571)

MOTOROLA

SEMICONDUCTOR mmmm^^t^m
TECHNICAL DATA

MMBR901L
The RF Line

Die Source Same as MRF901

NPN Silicon

High Frequency Transistors

... designed primarily for use in high-gain, low-noise, small-signal UHF and
microwave amplifiers constructed with thick and thin-film circuits using sur

RF AMPLIFIER TRANSISTOR
NPN SILICON

face mount components.

High Power Gain Gpe = 12 dB Typ <& f = 1 GHz

Low Noise Figure NF = 1.9 dB Typ @ f = 1 GHz
MAXIMUM RATINGS

Symbol

Value

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

Rating

Unit

vEBO

3.0

Vdc

Collector Current Continuous

mAdc

Operating and Storage Junction

TJ-Tstg

-55 to 150

Symbol

Max

Unit

350

2.8

mW'C

Tstg

150

RflJA

357

C/W

Temperature Range
THERMAL CHARACTERISTICS
Characteristic

Total Device Dissipation, Ta, = 25C

Derate above 25C

CASE 318-07. STYLE 6

SOT-23

Storage Temperature
Thermal Resistance Junction to Ambient

LOW PROFILE

Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.

DEVICE MARKING
MMBR901L = 7A

ELECTRICAL CHARACTERISTICS <TA = 25eC unless otherwise noted.

Characteristic

Symbol

Min

v(BR)CEO

Vdc

v(BR)CBO

Vdc

v(BR)EBO

2.0

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(Iq = 1.0 mAdc, Ig = 0)

Collector-Base Breakdown Voltage

(lc

0.1 mAdc, Ie

Emitter-Base Breakdown Voltage

Vdc

(lE - 0.1 mAdc, lc - 0)

ICBO

Collector Cutoff Current

nAdc

(Vcb = 15 Vdc, l - 01
ON CHARACTERISTICS

hFE

DC Current Gain

200

dC = 5.0 mAdc, VCE ~- 5.0 Vdc)

SMALL-SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

1.0

(vCb = io vdc. Ie = o. f = 1- MHz>

Gpe

Common-Emitter Amplifier Power Gain

12(Typ)

(Vce = 6.0 Vdc. lc = 5.0 mAdc. f = 1.0 GHz)

Noise Figure

(lc = 5.0 mAdc, VCe = 6.0 Vdc. f = 1.0 GHz)

MOTOROLA RF DEVICE DATA

2-225

1.9 (Typ)

MMBR911L (See MPS911)

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MMBR920L

The RF Line

NPN Silicon

High Frequency Transistor

... designed for thick and thin-film circuits using surface mount compo
nents and requiring low-noise, high-gain signal amplification at frequencies

RF AMPLIFIER TRANSISTOR

to 1 GHz.

High Gain Gpe = 15dB Typ @f = 500 MHz

NPN SILICON

Low Noise NF = 2.4 dB Typ (u f = 500 MHz

MAXIMUM RATINGS
Rating

Symbol

Value

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

Unit

vEBO

3.0

Vdc

Collector Current Continuous

mAdc

Operating and Storage Junction

Temperature Range

Tj. Tstg

-55 to -150

Symbol

Max

Unit

350

2.8

mW/X

Tstg

150

R"JA

357

c w

THERMAL CHARACTERISTICS
Characteristic

Total Device Dissipation, Ta = 25X

Derate above 25X

CASE 318-07. STYLE 6

SOT-23

Storage Temperature
Thermal Resistance Junction to Ambient

LOW PROFILE

Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.

DEVICE MARKING
MMBR920L = 7B

ELECTRICAL CHARACTERISTICS (TA = 25X unless otherwise noted.

Characteristic

Symbol

Min

v(BR)CEO

V(BR)CBO

v(BR)EBO

2.0

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

(lC = 1.0 mAdc, Ib = 0)

Collector-Base Breakdown Voltage

Vdc

(lC = 0.1 mAdc, Ie = 0)

Emitter-Base Breakdown Voltage

(Ig = 0.1 mAdc, lc = 0)

Collector Cutoff Current

!CBO

Vdc

nAdc

(vCb = 1 vdc, Ie = o)
ON CHARACTERISTICS
DC Current Gain

hFE

250

(lc = 14 mAdc, VCE = 10 Vdc)

SMALL SIGNAL CHARACTERISTICS

Current-Gain Bandwidth Product

4.5

GHz

(lC = 14 mAdc, VCe = 1 Vdc. f = 0.5 GHz)

Collector-Base Capacitance

Ccb

1.0

(Vcb = io vdc, ig = o. f = i.o mhz)

Noise Figure

C = 2.0 mAdc. VCe = 10 Vdc, f = 0.5 GHz)

dB
2.4
-

(lC = 2.0 mAdc, Vce = 10 Vdc. f = 1.0 GHz)

3.0

Common-Emitter Amplifier Power Gain

Gpe

(lC = 2.0 mAdc, Vce = ,0 Vdc, f = 0.5 GHz)

(lC

2.0 mAdc, VCe

dB
15
-

10 Vdc, f = 1.0 GHz)

MOTOROLA RF DEVICE DATA

2-226

MOTOROLA

SEMICONDUCTOR i h ^ h h
TECHNICAL DATA

MMBR930L
The RF Line

NPN Silicon

High Frequency Transistor

... designed for thick and thin-film circuits using surface mount compo
nents and requiring low-noise, high-gain signal amplification at frequencies

AMPLIFIER TRANSISTOR

to 1 GHz.
NPN SILICON

High Gain Gpe = 11 dB Typ & f = 500 MHz

Low Noise NF = 1.9 dB Typ (< f = 500 MHz
MAXIMUM RATINGS

Symbol

Value

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

Rating

Unit

VEBO

3.0

Vdc

Collector Current Continuous

mAdc

Operating and Storage Junction

Temperature Range

Tj. TStg

-55to + 150

Symbol

Max

Unit

350

2.8

mW7X
X
X/W

THERMAL CHARACTERISTICS
Characteristic

Total Device Dissipation. l/\ = 25X

Derate above 25X

Storage Temperature

Tstg

150

Thermal Resistance Junction to Ambient

RJA

357

CASE 318-07, STYLE 6

SOT-23
LOW PROFILE

(TO-236AA/AB)

Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.

DEVICE MARKING

1 MMBR930L

ELECTRICAL CHARACTERISTICS (TA = 25X unless otherwise noted.:

Characteristic

Symbol

Min

V(BR)CEO

V(BR)CBO

v(BR)EBO

3.0

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

(lC = 1.0 mAdc, lB = 0)

Collector-Base Breakdown Voltage

Vdc

UC = -1 mAdc, Ig = 0)
Emitter-Base Breakdown Voltage

Vdc

(IE = 0.1 mAdc, lc = 0)

Collector Cutoff Current

XBO

nAdc

(vCb = 5.o vdc. Ie = o>

ON CHARACTERISTICS

hFE

DC Current Gain

dC = 30 mAdc, VCe

250

5.0 Vdc)

SMALL-SIGNAL CHARACTERISTICS

Collector-Base Capacitance

ccb

1.0

(vCB = 1 vdc, iE = o. f = i.o MHz)

Noise Figure

dC = 2.0 mAdc, VCE = 5.0 Vdc, f - 0.5 GHz)

dC = 2.0 mAdc, VCE
5.0 Vdc. f = 1.0 GHz)

1.9

2.5

Gpe

Common-Emitter Amplifier Power Gain

(lC = 2.0 mAdc. Vce = 5.0 Vdc. f - 0.5 GHz)

(lC - 2.0 mAdc, VCE - 5.0 Vdc, f = 0.5 GHz)

dB
-

11
8.0

MOTOROLA RF DEVICE DATA

2-227

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MMBR931L
Die Source Same as MRF931

The RF Line

NPN Silicon

High Frequency Transistor

... designed primarily for use in low-power amplifiers to 1 GHz. Ideal for
pagers and other battery operated systems where power consumption is

RF AMPLIFIER TRANSISTOR

critical.

NPN SILICON

MAXIMUM RATINGS

Rating

Symbol

Value

Collector-Emitter Voltage

vCEO

5.0

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

Unit

vEBO

2.0

Vdc

Collector Current Continuous

5.0

mAdc

Operating and Storage Junction

Temperature Range

Tj. Tstg

-55 to - 150

Symbol

Max

Unit

0.4

mW C

THERMAL CHARACTERISTICS
Characteristic

Total Device Dissipation, T/^ = 25X

Derate above 25X

CASE 318-07, STYLE 6

SOT-23
LOW PROFILE

Storage Temperature

Tstq

150

Thermal Resistance Junction to Ambient

RtfJA

2500

C W

(TO-236AA/AB)

Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.

DEVICE MARKING
MMBR931L = 7D

ELECTRICAL CHARACTERISTICS (TA = 25X unless otherwise noted.

Symbol

Min

Collector-Emitter Breakdown Voltage

(lC
0.1 mAdc. Ib = 0)

V(BR)CEO

5.0

Collector-Base Breakdown Voltage

v(BR)CBO

v(BR)EBO

2.0

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS

Vdc

dC = 0.01 mAdc. IE = 0)
Emitter-Base Breakdown Voltage

(IE = 0.1 mAdc. lc = 0)

Collector Cutoff Current

!CBO

Vdc

nAdc

(Vcb = 5.0 Vdc. l = 0)

ON CHARACTERISTICS
DC Current Gain

I'FE

150
-

dC = 0.25 mAdc. VCE = 1.0 Vdc)

SMALL-SIGNAL CHARACTERISTICS

Collector-Base Capacitance

ccb

0.5

(VCB - 1.0 Vdc. IE = 0, f = 1.0 MHz)

Noise Figure

4.3

(IE = 0.25 mAdc, Vce = 1-0 Vdc, f = 1.0 GHz)

Power Gain at Optimum Noise Figure

GNF

(lE = 0.25 mAdc, Vce = 1-0 Vdc, f = 1.0 GHz)

MOTOROLA RF DEVICE DATA

2-228

MMBR941L
MMBR951L

MOTOROLA

(See MRF941)
(See MRF951)

SEMICONDUCTOR
TECHNICAL DATA

MMBR2060L

The RF Line

NPN Silicon

High Frequency Transistor

... designed primarily for use in high-gain, low-noise amplifier, oscillator
and mixer applications. Packaged for thick or thin-film circuits using surface

RF AMPLIFIER TRANSISTOR

mount components.
NPN SILICON

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

mAdc

Rating

Collector Current Continuous

Operating and Storage Junction

Tj. Tstg

-55 to - 150

Symbol

Max

Unit

350

2.8

mWVX

Temperature Range
THERMAL CHARACTERISTICS
Characteristic

Total Device Dissipation, Ta = 25X

Derate above 25X

Storage Temperature

Tstq

150

Thermal Resistance Junction to Ambient

PflJA

357

CASE 318-07, STYLE 6

SOT-23

LOW PROFILE

X/W

(TO-236AA/AB)

Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.

DEVICE MARKING
MMBR2060L

ELECTRICAL CHARACTERISTICS (TA - 25X unless otherwise noted.

Symbol

Characteristic

Min

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (lc = 1.0 mAdc, Ib = 0)

Collector Cutoff Current (Vcb

v(BR)CEO

10 Vdc, Ie = 0)

'CBO

Emitter Cutoff Current (Veb = 4.0, lc =- 0)

!eB0

Vdc

nAdc

100

/xAdc

ON CHARACTERISTICS

DC Current Gain

hFE

(lC = 5.0 mAdc, VCe = 5.0 Vdc)

Collector-Emitter Saturation Voltage

VcE(sat)

0.38

Vdc

0.98

Vdc

dC = 80 mAdc, Ib = 8.0 mAdc)

Base-Emitter Saturation Voltage
dC = 40 mAdc, Ib = 20 mAdc)

vBE(sat)

SMALL-SIGNAL CHARACTERISTICS

1.0 (Typ)

Small-Signal Current Gain

dC = 20 mAdc, Vce
1 Vdc. f = 500 MHz)

hFE

2.0

Collector-Base Capacitance
(VCB = 10 Vdc, lE = 0)

Ccb

Emitter-Base Capacitance

Ceb

Current-Gain Bandwidth Product

dC = 20 mAdc, Vce

GHz

1-0 Vdc, f = 100 MHz)

1.0

3.0

3.5 (Typ)

(vEb = 0.5 vdc, ic = o)

Noise Figure

(Vce = 10 Vdc, Ie = 1.5 mAdc, f = 450 MHz)

Common-Emitter Amplifier Power Gain

Gpe

(VCe = 1 Vdc, lE = 1.5 mAdc, f = 450 MHz)

MOTOROLA RF DEVICE DATA

2-229

12.5 (Typ)

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MMBR2857L

The RF Line

Die Source Same as 2N2857

NPN Silicon

High Frequency Transistor

... designed primarily for use in high-gain, low-noise amplifier, oscillator

and mixer applications. Packaged for thick or thin-film circuits using surface

RF AMPLIFIER TRANSISTOR

mount components.
NPN SILICON
MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Collector-Emitter Voltage

VCES

Vdc

Emitter-Base Voltage

vEBO

2.5

Vdc

Collector Current Continuous

mAdc

Operating and Storage Junction

Temperature Range

TJ. Tstg

-55 to

t 150

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

350

"Total Device Dissipation, T/\ = 25X

Derate above 25X

Unit
mW

2.8

Storage Temperature

Tstq

150

Thermal Resistance Junction to Ambient

RfUA

357

CASE 318-07. STYLE 6

SOT-23
LOW PROFILE

(TO-236AA/AB)

Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.

DEVICE MARKING
MMBR2857L

ELECTRICAL CHARACTERISTICS (TA - = 25X unless otherwise noted.

Characteristic

Symbol

Min

Collector-Emitter Breakdown Voltage

(lC = 3.0 mAdc. Ib = 0)

V(BR)CEO

Collector-Base Breakdown Voltage

dC = 1.0 /.Adc, lE = 0)

v(BR)CBO

Collector-Emitter Breakdown Voltage

dC = 3.0 mAdc, Ie = 0)

V(BR)CES

Emitter-Base Breakdown Voltage

(IE = 10/iAdc, lc = 0)

v(BR)EBO

2.5

Max

Unit

OFF CHARACTERISTICS

Collector Cutoff Current

ICBO

(VCb = 15 Vdc, lE = 0)

0.05

Vdc

MAdc

ON CHARACTERISTICS
DC Current Gain

hFE

dC = 3.0 mAdc. Vce = 1 Vdc)

SMALL-SIGNAL CHARACTERISTICS

Current-Gain-Bandwidth Product

dC = 4.0 mAdc, VCE - 10 Vdc. f

100 MHz)

1000

MHz
-

(Typ)

Collector-Base Capacitance

Ccb

1.0

(vCb = io vdc. Ie - o, f = 0.1 mhz)

Small-Signal Current Gain

dC = 2.0 mAdc, VCE

hfe

6.0 Vdc, f

Noise Figure

(lC = 1.5 mAdc, Vce

6.0 Vdc, Rs

1.0 kHz)

50 !!, f

4.5 (Typ)

450 MHz)

Common-Emitter Amplifier Power Gain

Gpe

(lC = 1.5 mAdc. VCe = 6.0 Vdc. f = 450 MHz)

MOTOROLA RF DEVICE DATA

2-230

12.5 (Typ)

MOTOROLA
SEMICONDUCTOR H ^ ^ ^

MMBR4957L

TECHNICAL DATA

Die Source Same as 2N4957

The RF Line

PNP Silicon

High Frequency Transistor

lC = -30 mA

... designed for high-gain, low-noise amplifier oscillator and mixer applica
tions. Specifically packaged for thick and thin-film circuits using surface

HIGH FREQUENCY

mount components.

TRANSISTOR

High Gain Gpe = 17dB Typ (a f = 450 MHz

PNP SILICON

Low Noise NF = 3 dB Typ (u f = 450 MHz

MAXIMUM RATINGS

Symbol

Value

Collector-Emitter Voltage

Rating

VCEO

-30

Vdc

Collector-Base Voltage

vCBO

-30

Vdc

Emitter-Base Voltage

Unit

vEBO

-3.0

Vdc

Collector Current Continuous

-30

mAdc

Operating and Storage Junction

Temperature Range

Tj. Tstg

-55 to 150

Symbol

Max

Unit

350

2.8

mW C

THERMAL CHARACTERISTICS
Characteristic

'Total Device Dissipation, T/\

25X

Derate above 25X

CASE 318-07. STYLE 6

SOT-23
LOW PROFILE

(TO-236AA/AB)

Storage Temperature

Tstq

150

Thermal Resistance Junction to Ambient

RJA

357

X
cw

Package mounted on 99.5 alumina 10 x 8 x 0.6 mm.

DEVICE MARKING
MMBR4957L

ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted.

Characteristic

Symbol

Min

v(BR)CEO

-30

V(BR)CBO

-30

v(BR)EBO

-3.0

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

(lC = -1.0 mAdc. Ib = 0)

Collector-Base Breakdown Voltage

[lC

Emitter-Base Breakdown Voltage

(IE =

Vdc

100/.Adc. lc = 0)

Collector Cutoff Current

(VCb

Vdc

100/<Adc, Ie = 0)

'CBO

-0.1

uAdc

-10 Vdc. lc = 0)

ON CHARACTERISTICS

DC Current Gain

dC = . 2.0 mAdc. VCe -

"FE

1200(Typ)

150

10 Vdc)

SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product

MHz
-

(IE = - 2.0 mAdc. VCe = - 10 Vdc. f = 100 MHz)

Collector-Base Capacitance

Ccb

(Vcb -10 Vdc, Ie = 0. f

Common-Emitter Amplifier Power Gain

(VCe

1 Vdc, lc =

Gpc

17 (Typ)

2.0 mAdc, f - 450 MHz)

Noise Figure

(lC = -2.0 mAdc. Vce =

0.8

1.0 MHz)

1 Vdc. f = 450 MHz)

MOTOROLA RF DEVICE DATA

2-231

3.0 (Typ)

MMBR4957L

COMMON EMITTER S-PARAMETERS

Sll

S21

S22

S12

Vce

(Volts)

(mA)

MHz

Pill

Ltb

|S2li

.:<*>

IS12I

/-*

IS22I

L<t>

-5.0

0.1

0.61

-37

9.28

148

0.03

0.90

-16

-10

0.3

0.39

-83

5.56

112

0.07

0.69

-27

0.5
0.7

0.30

-107

3.73

0.09

0.62

-30

0.26

-125

2.79

0.12

0.59

-34

0.9

0.24

-140

2.26

0.14

0.58

-38

1.2

0.24

-158

1.78

0.17

0.58

-45

1.5

0.23

-172

1.49

0.20

0.58

-51

2.0

0.23

156

1.17

024

0.56

-61

2.5

0.25

133

0.98

0.29

0.54

-72

3.0

0.29

105

0.85

0.34

0.50

-83

0.1

0.42

-55

11.54

138

0.03

0.84

-18

0.3

0.28

-108

5.81

104

0.06

0.64

-25

0.5

0.25

-132

3.72

0.08

0.59

-28

0.7

0.25

-148

2.77

0.11

0.58

-32

0.9

0.25

-162

2.23

0.13

0.57

-37

1.2

0.26

-177

1.74

0.16

0.57

-43

0.19

0.57

-50

0.24

0.56

-60

0.26

170

1.46

62
54

2.0

0.27

142

1.14

2.5

0.30

122

0.95

0.29

0.53

-72

3.0

0.34

0.82

0.35

0.50

-83

1.5

-15

0.1

0.24

-90

6.83

129

0.02

0.80

-12

0.3

0.24

-136

3.17

107

0.05

0.72

-19

0.5

0.27

0.7

-153
-167

2.23

0.08

0.69

-26

0.29

1.75

0.10

0.66

-32

0.9

0.31

-178

1.47

0.12

1.2

0.32
0.32

168

1.20

0.15

0.64

-46

155

1.03

0.18

0.63

-53

-65

1.5

-10

-5.0

-15

-38

2.0

0.34

130

0.83

0.24

0.60

2.5

0.36

111

0.71

0.31

0.57

-78

3.0

0.41

0.64

0.37

68
64

0.51

-90

0.92

-14

0.1

0.65

-33

9.36

149

0.03

0.3

0.42

-73

5.77

114

0.06

0.72

0.5

0.31

-95

3.91

0.09

0.65

-29

0.7

0.26

-111

2.94

0.11

0.62

-32

0.9

0.24

-126

2.39

0.14

0.61

-37

1.2

0.23

-144

1.87

0.17

0.60

1.5

0.21

-159

1.58

0.19

0.60

-43
-49

0.20

166

2.0

-10

0.65

-25

1.24

0.23

0.58

-58

2.5

0.21

141

1.04

0.27

0.56

-69

3.0

0.25

109

0.90

0.32

0.52

-79

0.1

0.49

-46

12.33

141

0.03

0.87

-17

0.3

0.30

-91

6.45

107

0.06

0.66

-24

0.5

0.25

-114

4.19

0.08

0.61

-27

0.7

0.23

-132

3.10

0.11

0.59

-31

0.9

0.22

-147

2.50

0.13

0.58

-35

1.2

0.23

-164

1.96

0.16

0.58

-41

1.5

0.23

-178

1.63

0.18

0.58

-47

2.0

0.23

150

1.27

0.23

0.57

-57

2.5

0.25

128

1.06

0.28

65
64

0.55

-67

3.0

0.30

101

0.92

0.33

0.51

-78

0.1

0.38

-57

12.51

135

0.02

0.84

0.3

0.25

-107

5.97

103

0.05

0.66

-21

0.5

0.23

-130

3.84

0.08

0.63

-25

0.7

0.23
0.24

-147

2.84

0.10

0.61

-29

0.9

-161

2.29

0.12

0.61

-34

1.2

0.26

-177

1.80

0.15

0.60

-41

-17

1.5

0.26

1.50

0.18

2.0

0.27

141

1.17

0.23

0.59

-57

2.5

0.29

120

0.97

0.28

0.57

-68

3.0

0.34

0.84

0.34

0.53

-79

170

MOTOROLA RF DEVICE DATA

2-232

0.61

-47

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MMBR5031L

The RF Line

Die Source Same as 2N5031

NPN Silicon

High Frequency Transistor

... designed for thick and thin-film circuits using surface mount compo

nents and requiring low-noise, high-gain signal amplification at frequencies

RF AMPLIFIER TRANSISTOR

to 1 GHz.
NPN SILICON

High Gain Gpe = 17 dB Typ (a f = 450 MHz

Low Noise NF = 2.5 dB Typ < f = 450 MHz
MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

3.0

Vdc

Collector Current Continuous

mAdc

Operating and Storage Junction

Tj. Tstg

-55 to +150

Symbol

Max

Unit

300

2.4

mVW'C

Rating

Temperature Range
THERMAL CHARACTERISTICS
Characteristic

CASE 318-07. STYLE 6

Total Device Dissipation, Ta = 25C

Derate above 25C

SOT-23

LOW PROFILE

Storage Temperature

Tstq

150

Thermal Resistance Junction to Ambient

RfJJA

417

(TO-236AA/AB)

Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.

DEVICE MARKING
MMBR5031L = 7G

ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted.

Characteristic

Symbol

Min

V(BR)CEO

v(BR)CBO

v(BR)EBO

3.0

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

(lC = 1.0 mAdc, Ib = 0)

Collector-Base Breakdown Voltage

Vdc

(lC = 0.01 mAdc, Ie = 0)

Emitter-Base Breakdown Voltage

Vdc

(Ig = 0.01 mAdc, lc = 0)

Collector Cutoff Current

XBO

nAdc

(vCb = 6.0 vdc, ig = o)

ON CHARACTERISTICS
DC Current Gain

"FE

1,000

300

(lC = 1.0 mAdc. VCe = 6.0 Vdc)

SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product

MHz

(Typ)

(lC = 5.0 mAdc, Vce = 6.0 Vdc, f = 100 MHz)

Collector-Base Capacitance

Ccb

1.5

2.5 (Typ)

(vCe = 6.o Vdc, ig = o, f = o.i mhz)

Noise Figure

(lC = 1.0 mAdc, Vce = 6.0 Vdc, f = 450 MHz)

Gpe

Common-Emitter Amplifier Power Gain

(lC = 1.0 mAdc, VCe = 6.0 Vdc, f = 450 MHz)

MOTOROLA RF DEVICE DATA

2-233

17 (Typ)

MOTOROLA

SEMICONDUCTOR mmm^mam^m
TECHNICAL DATA

MMBR5179L

The RF Line
Die Source Same as 2N5179

NPN Silicon

High Frequency Transistor

... designed for small-signal amplification at frequencies to 500 MHz. Specif
ically packaged for use in thick and thin-film circuits using surface mount
components.

High Gain Gpe = 15dB Typ < f = 200 MHz

RF AMPLIFIER TRANSISTOR

Low Noise NF = 4.5 dB Typ (a f = 200 MHz

NPN SILICON

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

VEBO

2.5

Vdc

Collector Current Continuous

mAdc

Operating and Storage Junction

Temperature Range

Tj. Tstg

-55 to

t 150

THERMAL CHARACTERISTICS

Symbol

Max

Unit

350

2.8

mW C

Storage Temperature

Tstq

150

Thermal Resistance Junction to Ambient

R0JA

357

cc/w

Characteristic

Total Device Dissipation, T/\ = 25C

Derate above 25:C

CASE 318-07. STYLE 6

SOT-23

LOW PROFILE

Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.

(TO-236AA/AB)

DEVICE MARKING
MMBR5179L -

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.

Symbol

Min

Collector-Emitter Breakdown Voltage

dC = 3.0 mAdc, lB = 0)

v(BR)CEO

Collector-Base Breakdown Voltage

(lC = 0.01 mAdc. l = 0)

v(BR)CBO

Emitter-Base Breakdown Voltage

(IE = 0.01 mAdc, lc = 0)

v(BR)EBO

2.5

Characteristic

Max

Unit

OFF CHARACTERISTICS

Collector Cutoff Current

!CBO

Vdc

0.02

Vdc

/iAdc

(Vcb = is vdc, ie = o)
ON CHARACTERISTICS
DC Current Gain

"FE

dC = 3.0 mAdc, Vce = 10 Vdc)

Collector-Emitter Saturation Voltage

VCE(sat)

HC = 10 mAdc, Ib = 1.0 mAdc)

Base-Emitter Saturation Voltage

vBE(sat)

0.4

Vdc

1.0

Vdc

dC = 10 mAdc, Ib = 1.0 mAdc)

SMALL SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product

(lC = 5.0 mAdc. VCe = 6.0 Vdc. f = 100 MHz)

MHz

(Typ)

Collector-Base Capacitance

(vCb = io vdc. Ie = o, f

1,400

Ccb

1.0

o.i to 1.0 mhz)

Small Signal Current Gain

hfe

dC = 2.0 mAdc. Vce = 6.0 Vdc. f = 1.0 kHz)

Noise Figure

4.5 (Typ)

(lC = 1.5 mAdc. VCe = 6.0 Vdc, Rs = 50 11. f = 200 Mhz)

Common-Emitter Amplifier Power Gain

Gpe

(VCE = 6.0 Vdc, lc = 5.0 mAdc. f = 200 MHz)

MOTOROLA RF DEVICE DATA

2-234

15 (Typ)

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MPS536
MMBR536L

PNP Silicon High Frequency

Transistors
... this high current gain-bandwidth transistor makes an excellent RF amplifier and
oscillator. It is available in the surface mount SOT-23 as well as the popular TO-92
low cost plastic packages.
High Current Gain-Bandwidth Product

fj = 5.5 GHz (Typ) (a lc = -20 mA MMBR536

fj = 4.5 GHz (Typ) <5 lc = -20 mA MPS536

|c = -30 mA
LOW NOISE
HIGH FREQUENCY

TRANSISTORS

High Gain
GNF = 14 dB (Typ)
Low Collector-Base Capacitance

Ccb = 0.8 pF (Typ) fa VCB = -5 Vdc

Tape and Reel Packaging Options

CASE 29-04, STYLE 2

TO-92
MPS536

CASE 318-07, STYLE 6

SOT-23
LOW PROFILE
MMBR536L

MAXIMUM RATINGS

Symbol

MPS536

MMBR536L

Unit

Collector-Emitter Voltage

VCEO

-10

Vdc

Collector-Base Voltage

vCBO

-15

Vdc

Emitter-Base Voltage

VEBO

-4.5

Vdc

-30

625

200*

1.6

mW/C

Tstg

-65 to +150

Rating

Collector Current Continuous

Power Dissipation <?i Ta = 25C

Derate above 25C

Storage Temperature
Free air

DEVICE MARKING
MMBR536L = 7R

MOTOROLA RF DEVICE DATA

2-235

MPS536, MMBR536L

ELECTRICAL CHARACTERISTICS (Tc = 25C 'For both package types unless otherwise noted)
Symbol

Min

Collector-Emitter Breakdown Voltage 0c = - 2 mA, Iq = 0)

V(BR)CEO

-10

Collector-Base BreakdownVoltage (lc = -100 /tA, lg = 0)

V(BR)CBO

-15

Emitter-Base Breakdown Voltage (Ig - -10 pA, lc = 0)

V(BR)EBO

-4.5

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS

Collector Cutoff Current (Vcb = -10 Vdc, Ig = 0)

ICBO

Vdc

-10

nAdc

ON CHARACTERISTICS

DCCurrent Gain (lc = -20 mA, Vce = -5 V)

hFE

200

DYNAMIC CHARACTERISTICS

Current Gain-Bandwidth Product

GHz

C = -20 mAdc, Vce = -5 Vdc, f = 1 GHz)

MPS536

4.5

0.8

MMBR536L

5.5

Collector-Base Capacitance

Ccb

1.2

(Vcb = -5 vdc, ie = o, f = 1 mhz)

FUNCTIONAL TESTS

Gain (a Noise Figure

Gnf

(lC = -10 mAdc, Vce =

-5 Vdc)

f = 500 MHz

f = 1 GHz

Noise Figure

dC = -10 mAdc, Vce =

-5 Vdc)

f = 500 MHz

4.5

f = 1 GHz

IC.I

V(k2 -

GAnw = lid (k
I I

ks-1

\MMBR536l
MMBR536

MPSKJ?**
>S3S

VCE = -5V
f = 1 >Hz

Vce= -&v

It =

-5

-10

-15

-20

0.2

0.3

l&COLLECTOR CURRENT (mA)

-30mA

Jr 0
0.5

(.FREQUENCY (GHzl

Rgure 1. Current Gain-Bandwidth Product

Rgure 2. Maximum Available Gain (GAmax)

versus Collector Current

versus Frequency

MOTOROLA RF DEVICE DATA

2-236

MPS536, MMBR536L

MPS536

MMBR536L

n
Gu max

.Gymiut

s^Umax

*- IS

52,|2-

S21I:

| 10

(1 - ISnMll - IS^IZ)

v^'

PZir

Mil'

(1 - K,,12)11 - IS^lZl

"*s 10
10
E

\l ^^>

V CE = ->
"C = -20 niA

0
0.2

VCE =
lr -

0.3

0.5

-5V

-20 mA

0.3

f, FREQUENCY (GHz)

0.5

f, FREQUENCY (GHzl

and Insertion Gain (IS21I2)

Rgure 4. Maximum Unilateral Gain (Gumax)

and Insertion Gain (IS21I2)

versus Frequency

Rgure 3. Maximum Unilateral Gain (Gumax)

MPS 5:J&MMBR5361

M >S536/rV MBR53I6L
8

f = 500 MHz
a

f = 1 GHz

f = IG to

f-51 X)MHz

z
z

VCE =

Vqe = -5V

-5V
0

-4

-8

-12

-16

-4

!C. COLLECTOR CURRENT (mA)

-8

-12

-16

lC. COLLECTOR CURRENT (mA)

Figure 5. Gain at Noise Figure versus

Figure 6. Noise Figure versus Collector Current

Collector Current

MOTOROLA RF DEVICE DATA

2-237

-20

MPS536, MMBR536L

MPS536

'"*

Ccb
z

3
(= 1MHz

f = 1MHz

0
-1

-2

-3

-2

VBe. BASE-EMITTER VOLTAGE (Vdc)

-4

-6

-8

VCB, COLLECTOR-BASE VOLTAGE (Vdc)

Rgure 7. Input Capacitance versus

Emitter-Base Voltage

Rgure 8. Output Capacitance versus

Collector-Base Voltage

MMBR536L

Ccb

1 = 1M to

?
f = 1M to
0

-1

-2

-3

VBE. BASE-EMITTER VOLTAGE (Vdc)

-4

-6

Vce, COLLECTOR-BASE VOLTAGE (Vdc)

Rgure 10. Output Capacitance versus

Collector-Base Voltage

Rgure 9. Input Capacitance versus

Emitter-Base Voltage

MOTOROLA RF DEVICE DATA

2-238

MPS536, MMBR536L

MPS536

INPUT/OUTPUT REFLECTION COEFFICIENT

FORWARD/REVERSE
TRANSMISSION COEFFICIENTS

versus

FREQUENCY

Vce = -10 V. Iq = -10 mA

Vce = -10 V. lc = -10 mA

-90

MPS536

COMMON EMITTER S-PARAMETERS

S21

S22

S12

Vce

(Volts)

(mA)

(MHz)

Pill

L4>

Pail

Z.<fr

IS12I

L4>

IS22I

-10

-5

200

0.60

-43

6.60

125

0.07

0.71

-35
-43

-10

-20

500

0.30

-60

3.64

0.14

0.47

1000

0.17

-103

2.11

0.22

0.32

-69

1500

0.15

156

1.70

0.30

0.22

-112

2000

0.28

200

0.48

110

1.29

0.33

0.25

-174

-52

8.78

118

0.06

0.62

-42

500

0.21

-66

4.31

0.12

0.37

-46

1000

0.12

-122

2.40

0.20

0.24

-73

1500

0.18

138

1.90

0.29

0.16

-126

2000

0.32

104

1.41

0.33

0.23

200

0.38

-59

10.21

112

0.06

0.54

170
-46

500

0.14

-76

4.72

0.12

0.30

-47

1000

0.11

-144

2.58

0.20

0.19

-74

1500

0.22

132

1.99

0.29

49
34

0.12

-139

2000

0.35

103

1.46

0.33

0.22

161

MOTOROLA RF DEVICE DATA

2-239

MPS536, MMBR536L

MMBR536L

MMBRS36L

INPUT/OUTPUT REFLECTION COEFFICIENTS

FORWARD AND REVERSE TRANSMISSION COEFFICIENTS

versus

FREQUENCY

VCe = -10 V, lc = -10 mA

Vce = -10 V, lc = -10 mA

+ 90

MMBR536L
COMMON EMITTER S-PARAMETERS

S11

(mA)

(MHz)

Pill

^<f>

-10

-5

200

0.60

500

-10

-20

Si2

S21

vce
(Volts)

S22

fell

*-+

P2ll

L<t>

P22l

<L<t>

-44

6.47

126

0.07

0.68

-35

0.14

0.37

-70

3.57

1000

0.27

-105

2.16

0.22

0.40

-69

1500

0.24

-138

1.62

0.29

0.37

-87

0.48

-50

2000

0.22

-166

1.38

0.33

0.34

-103

200

0.48

-54

8.65

120

0.06

0.58

-40

500

0.30

-82

4.32

0.12

0.38

-58

1000

0.24

-122

2.52

0.20

0.32

-78

1500

0.24

-155

1.84

0.27

0.30

-96

2000

0.24

178

1.54

0.32

0.28

-112

200

0.39

-63

10.10

115

0.06

0.49

-50

-94

4.77

0.11

0.32

1000

0.24

-136

2.72

0.19

0.27

-65
-84

1500

0.24

-167

0.26

-102

2000

0.26

168

1.96
1.63

58
46

0.32

0.25

-119

500

0.25

MOTOROLA RF DEVICE DATA

2-240

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MPS571
MMBR571L

The RF Line

NPN Silicon

High Frequency Transistors

lC = 80 mA
... designed for low noise, wide dynamic range front-end amplifiers and low-noise
VCO's. Available in a surface-mountable plastic package, as well as the popular
TO-226AA (TO-92) package. This Motorola series of small-signal plastic transistors offers

LOW NOISE
HIGH FREQUENCY
TRANSISTORS

superior quality and performance at low cost.

High Gain-Bandwidth Product

fT = 8 GHz (Typ) @ 50 mA
Low Noise Figure
NF = 2 dB (Typ) @ 500 MHz
High Gain

Gnf = 17 dB (Typ) (a 30 mA/500 MHz

State-of-the-Art Technology
Fine Line Geometry
Ion-Implanted Arsenic Emitters
Gold Top Metallization and Wires

CASE 29-04, STYLE 2

TO-226AA

(TO-92)
MPS571

Silicon Nitride Passivation

Tape and Reel Packaging Options

%
CASE 318-07, STYLE 6
SOT-23
LOW PROFILE
MMBR571L

MAXIMUM RATINGS

Ratings

Symbol

Collector-Emitter Voltage

MPSS71

MMBR571L

Unit

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

Vdc

Collector Current Continuous

Power Dissipation @ T/\ = 25C

625

200

(Free Air)

Storage Temperature

Tstg

DEVICE MARKING
MMBR571L = 7X

MOTOROLA RF DEVICE DATA

2-241

-55 to +150

MPS571, MMBR571L
ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted)
Symbol

Min

Typ

Collector-Emitter Breakdown Voltage

(lC = 1 mA, lB = 0)

V(BR)CEO

Collector-Base Breakdown Voltage

V(BR)CBO

v(BR)EBO

2.5

Characteristic

Max

Unit

OFF CHARACTERISTICS

(lC = 0.1 mA, lE = 0)

Emitter-Base Breakdown Voltage

(IE = 50 /xAdc, Iq = 0)
Collector Cutoff Current

"CBO

Vdc

300

jiAdc

(Vcb = 8 Vdc, lE = 0)
ON CHARACTERISTICS
DC Current Gain

fFE

C = 30 mAdc. VCE = 5 Vdc)

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance

Ccb

0.7

(Vcb = 10 Vdc, Ie = 0, f = 1 MHz)

Current Gain-Bandwidth Product

GHz

(Vce = 5 Vdc, lc = 50 mAdc, f = 1 GHz) MPS571

MMBR571L

FUNCTIONAL TESTS

Gain @ Noise Figure

Gnf
MPS571

f
f
MMBR571Lf
f

(lC = 10 mAdc, Vce = 5 Vdc)

Noise Rgure
(lC = 10 mAdc, Vce = 5 Vdc)

=
=
=
=

0.5 GHz
1 GHz
0.5 GHz
1 GHz

16.5
10.5

MPS571

f = 0.5 GHz

f = 1 GHz

|Si7

2.6

Rgure 2. Current Gain-Bandwidth versus

Rgure 1. Maximum Available Gain

versus Frequency
II

2.6

f = 1 GHz

aMAX
A

MMBR571Lf = 0.5 GHz

IrII

Collector Current @ 1 GHz

Ik +

N MBR57"

va = 5V
ic = 30rrlA

3 10

:> ^

MPS 571

/
II

Jto(IBR5711
1

vrF

= 5V

f =

GHz

MPS"1-

Jr 0
1

IGCOLLECTOR CURRENT (mAI

f. FREQUENCY (GHzl

MOTOROLA RF DEVICE DATA

2-242

100

MPS571, MMBR571L

Figure 3. Input Capacitance versus

Emitter Base Voltage
(a) TO-92 MPS571

(b) SOT-23 MMBR571L

MHz

1 =

g3
Cib
_

cib

f = 1 MHz

VB, BASE-EMITTER V0LTA6E (Vdc)

VBE, BASE-EMITTER VOLTAGE (Vdc)

Figure 4. Output Capacitances versus

Collector-Base Voltage
(a) TO-92 MPS571

(b) SOT-23 MMBR571L

2.5

f =

MHz

c ib

V
A

<^
^

"Si

<: -.

Cob
H

Ccb

8 0-6

f = 1 MHz
0

Vcb. COLLECTOR-BASE VOLTAGE (Vdc)

Vcb, COLLECTOR-BASE VOLTAGE (Vdc)

Figure 5. Gain at Noise Figure versus

Collector Current

(a) TO-92 MPS571

(b) SOT-23 MMBR571L

16
^

= 500*

I = 500 MHz

1?
f -

/ , ^-

i Q

1 = IG to

VCE ==

VCE

= 5V

lC. COLLECTOR CURRENT (mAI

lC. COLLECTOR CURRENT ImAI

MOTOROLA RF DEVICE DATA

2-243

MPS571, MMBR571L

Rgure 6. Noise Figure versus Collector Current

(a) TO-92 MPS571

(b) SOT-23 MMBR571L

v
V

f = 1 GHz

( = 1

f = 5 0 MHz

1 = 500 MHz

Vce = 5V

vce

lOCOLLECTOR CURRENT (mA)

= 5V

lC. COLLECTOR CURRENT (mA)

Rgure 7. Gain at Noise Rgure and Noise

Rgure versus Frequency
(a) TO-92 MPSS71

(b) SOT-23 MMBR571L

_20

:e = sv

Vce = 5V

''( ; = 10mA

H 15

3 5
e

S10

5 io

0.2

1.5

0.5

0.2

0.3

0.5

(.FREQUENCY (GHzl

I. FREQUENCY (GHzl

Figure 8. Maximum Unilateral Gain and

Insertion Gain versus Frequency
(a) TO-92 MPS571
30

b) SOT-23 MMBR571L

n
GyMAX = -

P2ir

I I I

GuMAX = -

N
S

CD
o

vCE = 5 1
lc = 30ntA

^=20

CO
o

s^GuMAX

I'5

3 ,5

IS21

Vce = 5V
IC = 30mA

ci. 20

i/>

5
'

P2ir

UM/

-IS-i 2**" v

0.3

0.6

1.5

0.6

f, FREQUENCY (GHzl

f. FREQUENCY (GHzl

MOTOROLA RF DEVICE DATA

2-244

MPS571, MMBR571L

TO-92 MPS571

INPUT/OUTPUT REFLECTION COEFFICIENTS

FORWARD/REVERSE TRANSMISSION

versus FREQUENCY

COEFFICIENTS versus FREQUENCY

Vce = 5 V. IC = 30 mA

Vce = 5 V, lc = 30 mA

COMMON EMITTER S-PARAMETERS

VCE

(Volts)

(mA)

(MHz)

200

S21

S11

s12

S22

Pill

t-6

IS21I

L4>

IS12I

>t>

IS22I

0.62

-80

8.22

122

0.07

0.63

-44

500

0.40

-148

4.52

0.11

0.36

1000

0.39

155

2.51

0.16

0.23

-78

1500

0.46

122

1.86

0.23

0.15

-114

2000

0.59

100

1.50

0.31

0.14

173

200

0.33

-121

12.88

105

0.05

0.37

-59

-58

500

0.28

-175

5.62

0.10

0.18

-67

1000

0.32

143

2.99

0.19

0.08

-94

1500

0.40

117

2.14

0.27

0.07

171

2000

0.55

1.74

0.35

0.198

117
-62

200

0.23

-143

13.65

0.05

0.26

500

0.23

169

5.75

0.11

0.13

-68

1000

0.30

130

3.05

0.21

0.04

-136
130

1500

0.41

106

2.11

0.29

0.12

2000

0.56

1.70

0.36

0.26

102

200

0.21

-158

13.96

0.05

0.21

-61

500

0.23

162

5.82

0.11

-66

1000

0.30

128

3.09

0.21

0.03

-149

1500
2000

0.41

105
84

2.11

28
11

39
23

0.12
0.27

127

1.70

0.29
0.36

0.56

MOTOROLA RF DEVICE DATA

2-245

100

MPS571, MMBR571L

SOT-23 MMBR571L

INPUT/OUTPUT REFLECTION COEFFICIENTS

versus FREQUENCY

FORWARD/REVERSE TRANSMISSION
COEFFICIENTS versus FREQUENCY

Vce = 5 V, lc = 30 mA

ISO0

COMMON EMITTER S-PARAMETERS

S2i

S11

S22

Sl2

vCE

(Volts)

(mA)

(MHz)

ISnl

t.+

|S21I

IS12I

IS22I

200

0.68

-82

8.41

126

0.07

0.61

-45

500

0.52

-142

4.62

1000

0.50

179

2.57

72
57

0.10
0.14

1.82

0.19

0.35

-60

53
58

0.26

-71

0.24

-77
-86

1500

0.51

161

2000

0.52

143

1.48

0.24

0.22

200

0.46

-125

13.65

108

0.05

0.35

-73

500

-169

6.03

0.09

0.17

-94

1000

0.43
0.44

168

3.20

0.16

0.14

-111

1500

0.45

152

2.21

0.22

0.11

-118

2000

0.46

137

1.80

0.29

0.10

-131

200
500

0.42

-148

14.79

102

0.04

0.26

-87

0.41

-177

6.31

0.09

0.14

-115

1000

0.42

165

3.35

0.16

0.12

-135

1500

0.44

151

0.23

0.11

-144

2000

0.44

135

2.29
1.84

0.30

0.10

-157

200

0.41

-159

15.14

0.04

0.21

500

0.42

179

6.38

0.09

0.13

-124

0.16

0.12

-143

0.23
0.30

0.10

-151

0.09

-163

1000

0.43

163

3.35

1500

0.44

148

2.32

2000

0.45

134

1.84

MOTOROLA RF DEVICE DATA

2-246

-96

MOTOROLA

SEMICONDUCTOR

MPS901
MPS1983

TECHNICAL DATA

The RF Line

lC = 30 mA
HIGH FREQUENCY
TRANSISTORS

NPN SILICON HIGH-FREQUENCY TRANSISTOR

NPN SILICION

... designed primarily for use in high-gain, low-noise small-signal

amplifiers.

High Current-Gain-Bandwidth Product fr = 4.5 GHz (Typ)

<a> lc = 15 mAdc

High Power Gain Gpe = 12 dB (Typ) @ f = 900 MHz

Low Noise Figure NF = 2.4 dB (Typ) @ f = 900 MHz

Low Feedback Capacitance CCD = 0.5 pF (Typ) @

Vcb = 10 V
Die Source Same as MRF901

MAXIMUM RATINGS
Rating

STYLE2:
mi. BASE

Symbol

Value

Unit

Collector-Emiller Voltage

VcEO

Vdc

2. EWTTEft
3. COLLECTOR

Collector-Base Voltage

vCBO

Vdc

NOTES:

Emitter-Base Voltage

vEBO

Vdc

1. CONTOUROF PACKAGE BEYOND ZONE"f IS

Collector Current - Continuous

Total Device Dissipation(a Tq 25"C

300

Derate above 25"C

Operating Junction Temperature

Storage Temperature Range

UNCONTROLLED

2. DIMT APPLES BETWEEN "H" AND1". DIM

"0" & "S" APPUESBETWEEN "L" & 1270mm
(O.S'IFROMSEATINGPLANE.LEADDIMIS
UNCONTROLLED IN "H"& BEYOND12.70mm
10.51 FROMSEATINGPLANE
3. CONTROLLING DIM: INCH

150

Tstg

55 to '150

DM
A

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance. Junction to Ambient

Symbol

Max

Unit

RHJA

200

f
G
H

J
K

I
N
P
R
S

WUMHERS
Mm
MAX
432
533
4.45
5.20
3.18
4.19
0.41
055
0.41
048
1.15
139
254

2.42

12.70
6.35
2.04

2.93
3.43
0.39

INCHES
MM
MAX
0.170
0210
0.175
0205
0.125
0.165
0.016

0016
0045

0.095
0.500

0.5?

0.135
0.015

CASE 29-04
TO-226AA

(TO-92)

MOTOROLA RF DEVICE DATA

2-247

0019

0055
0.1KI
0.105

0.250
0.060
0.115

0022

0.105
_

0020

MPS901, MPS1983
ELECTRICAL CHARACTERISTICS <TC =25C unless otherwise noted)
Symbol

Min

Collector-Emitter Breakdown Voltage

(lC = 1.0 mAdc. Ib = 0)

V(BR)CE0

Collector-Base Breakdown Voltage

dC = 0.1 mAdc. Ig = 0)

v(BR)CBO

Emitter-Base Breakdown Voltage

(IE = 0.1 mAdc. lc = 0)

v(BR)EB0

Characteristic

Typ

Unit

OFF CHARACTERISTICS

Collector Cutoff Current

'CBO

Vdc

nAdc

(VCb= 15 Vdc. Ifj = 0)

ON CHARACTERISTICS
DC Current Gain

"FE

200

(lC = 10 mAdc. Vce = 10 Vdc)

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product

4.5

0.5

GHz

lC = 15 mAdc. Vce = 10 Vdc. f = 1.0 GHz)

Collector-Base Capacitance

CCb

1.0

(VCB= 10 Vdc. l = 0. f = 1.0 MHz)

Noise Figure (Figure 1)
dC = 5.0 mAdc. Vce = 10 Vdc. 1 = 900 MHz)

2.4

FUNCTIONAL TESTS

Common-Emittbr Amplifier Power Gain (Figure 1)

Gpe

dC = 10 mA. VCe = 10 Vdc. f = 900 MHz)

FIGURE 1 -

900 MHz TEST CIRCUIT SCHEMATIC

Vcc= 10 Vdc
vbe

DUT

RF Input >-

-CI
Bias

Slug Tuner

Bias

-Q-

Tee

Slug Tuner

Tee

FIGURE 2

- CURRENT GAIN-BANDWIDTH PRODUCT

versus COLLECTOR CURRENT

6.0

Vc ;='

a
a

4.0

| 3.0
ar

101

I 1.0
10

It COLLECTOR CURRENT (mA)

MOTOROLA RF DEVICE DATA

2-248

-< RF Output

MPS901, MPS1983

FIGURE 4 - IS2V2 versus FREQUENCY

FIGURE 3 - MAXIMUM AVAILABLE GAIN

versus COLLECTOR CURRENT

VCE = 10 V
S

500 MKi

= 10 V

Vl5mA
15
5.0 mA

5.0

0
015

0 4

Iq. COLLECTOR CURRENT ImA)

0 5

0 7

1.E

I. FREQUENCY (GHz)

FIGURE 5 - NOISE FIGURE versus

COLLECTOR CURRENT

FIGURE 6 - NOISE FIGURE versus FREQUENCY

1 1

vrf = 10

'c = 5.0

1
I

= 10 \

i = 900 M Hi

4.0

010

015

Iq. COLLECTOR CURRENT (mA)

FIGURE 7 -

INPUT CAPACITANCE versus

FIGURE 8

EMITTER-BASE VOLTAGE
2.2

0.3
0.4
I. FREGUENCY (GHt)

0.5

0.7

1.0

COLLECTOR-BASE CAPACITANCE

versus COLLECTOR-BASE VOLTAGE

1.2

| |
(= 1.0 MHz

2.0

0.2

1.0 L

1.8

0.8

1 = 1.0 MHj

1.2

0.2

in
J

0 5

2 0

2 5

0 3

4 0

VEB. EMITTER-BASE VOLTAGE (Vdc)

8 0

Vcb. COLLECTOR-BASE VOLTAGE (Vdc)

MOTOROLA RF DEVICE DATA

2-249

MPS901, MPS1983
TABLE I

vce

(Volts)

(mA)

(MHz)

5.0

100

200
500
1000

1500
10

0 76
0.60
028
027
043

35
-63
127
148
113

S12
A/.

>Sl2l

IS22'

942
7 98
479
271
2.02

142

0.03

122
84

0.05

0.09
015
0.21

55
51
42

0.85
0.70
0.53
042
0.28

003
004
008
015
022

0.02
004
0 08
015
0 22

66
66
66
57

50
23

1500

136
109

100
200
500
1000
1500

042
0.26
017
026
043

17 80

105
169
131
108

11 50
527

100
200
500
1000

033

117

0 22
017

171

18 66
11 54
5 16
280
2 07

113
95
71

51
87
151

120

S22

IS21I

1480
1080
523
286
2 12

131
108
77
47
22

123
101
74

2 86

46
21

2 12

98
72

-18
-26

-35
-51
-79

075
0 60

048

039
025

26
-31
-48
-75

069
056
047
039
025

-22
-23
-28
-47
-73

0 66

68
67

055

-21
-21
27
-45

-22

002
0 03
008
0.15
022

58
45

048
040
0 27

002

0 64

70
68
60
47

055
050
042
0 30

129

100
200

028

103

0 22

500
1000

0 20
0 32

138
169

18 It
11 03
4 94

128

2 68

1500

0 49

106

1 98

0 03
008
015
022

100
200

031
028
0 28
0 39
055

127

16 10

109

0 02

0 64

156

9 69
432
2 37
1 73

70
70
63

057

053

-25

003
0 07
0.14

-16
-16

021

046
034

500
1000

1500

107

160
125
104

028
0 45

1500

S21
l.\.

057
036
018
025
042

100
200
500
1000

Si 1

ISnl

-71

-20
19
-25
-44

TABLE II

S11

S21

vce

(Volts)

(mA)

(MHz)

IS11I

IJb

5.0

100
200

079

500

028

1000

023
038

33
58
117
153

1500
10

060
039
016

-135

020

138

037

111

100
200
500
1000
1500

0.46
028
014
022
038

-61
-94

100
200

037
0.23
0.14
023
0.40

100
200
500

1000
1500
30

116

100
200
500
1000
1500

500
1000
1500

063

100
200
500
1000
1500

0.32
0 22
0.19
0 26
0.43
0.29
022

0 20
031
0.47

-48
79

-154

131
109
-72
-105
-172
128
108
-86
-119
-176

127
107
-103
-135
165
125
106

S12

S22

IS21I

Z.A

IS12I

Z.I.

IS22"

9 36
797
4 87
280
2 09

144

003
004
007
013
019

68
58
57
56
48

088
0 74
060
0 50
0.38

-15
-22

14 87
11 06
538
2 97
221

132

002
003
007
013
0.20

079
0.65
0.56
0.47
0.36

-18
-21
-28
-44
-66

002
003
007
013
020

66
66

0 74
062
055
0.48
036

-18

002
003
0.07

-17

013
020

62
51

071
061
0.56
0 48
0 37

68
69

68
70
72
66
55

124
86
53
26

110
79

50
25

1820
11 94
5.45
297
221

124

19.38
11 97
536
291
216

119

19 40
11 67
528
2.82
2.09

115
97
74
46
21

002
003
0.06
0.13
0.19

1829

112

0.02

10.86
263

95
72
44

1 95

003
006
012
019

482

102
76
48
24

99
74
47

MOTOROLA RF DEVICE DATA

2-250

63
64
59
49

61
50

68
69

63
53

0 70
061
0.57
0.50
0.40

-31
-46

-19
-26
-42
-64

-18
-24
-41

-64

-16
-16

-23
-41
-63

070
0.62

-14

0.59
0.53
043

-22
-41
-64

-15

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA
The RF Line

MPS911
MMBR911L

NPN Silicon

High Frequency Transistors

... designed for low noise, wide dynamic range front-end amplifiers and low-noise
VCO's. Available in a surface-mountable plastic package, as well as the popular
TO-226AA (TO-92) package. This Motorola series of small-signal plastic transistors offers
superior quality and performance at low cost.

lC = 60 mA
LOW NOISE
HIGH FREQUENCY

TRANSISTORS
NPN SILICON

High Gain-Bandwidth Product

fy = 7 GHz (Typ) @ 30 mA
Low Noise Figure
NF = 1.7 dB (Typ) <5> 500 MHz
High Gain
Gnf = 1? dB (Typ) < 10 mA/500 MHz
State-of-the-Art Technology
Fine Line Geometry
Ion-Implanted Arsenic Emitters

Gold Top Metallization and Wires

CASE 29-04. STYLE 2

TO-226AA

Silicon Nitride Passivation

(TO-92)

Tape and Reel Packaging Options

MPS911

CASE 318-07, STYLE 6

SOT-23
LOW PROFILE
MMBR911L

MAXIMUM RATINGS

Ratings

Symbol

Collector-Emitter Voltage

MPS911

MMBR911L

Unit

VcEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

Vdc

Collector Current Continuous

Power Dissipation (5 Ti\ = 25C

625

mA
200

(Free Air)

Storage Temperature

Tstg

DEVICE MARKING
MMBR911L = 7P

MOTOROLA RF DEVICE DATA

2-251

-55 to +150

MPS911rMMBR911L
ELECTRICAL CHARACTERISTICS (Tc = 25C unlessotherwise noted)
Symbol

Min

Collector-Emitter Breakdown Voltage

(IC = 1 mA, Ib = 0)

V(BR)CEO

Vdc

Collector-Base Breakdown Voltage

(lC = 0.1 mA, l = 0)

V(BR)CBO

Vdc

Emitter-Base Breakdown Voltage

(IE = 0.1 mA, lc = 0)

V(BR)EBO

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS

Collector Cutoff Current

ICBO

(Vcb = 15Vdc,lE = 0)

Vdc

nAdc

ON CHARACTERISTICS
DC Current Gain

hpE

200 J

(lC = 30 mAdc, Vce = 10 Vdc)

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance

Ccb

(Vcb = 10 Vdc, Ie = 0, f = 1 MHz)

Current Gain-Bandwidth Product

PF
GHz

(Vce = 10 Vdc, lc = 30 mAdc, f = 1 GHz) MPS911

MMBR911L

FUNCTIONAL TESTS

Gain (5 Noise Figure

C = 10 mAdc, Vce = 10 Vdc)

GNF
MPS911

f = 0.5 GHz

f = 1 GHz

MMBR911LI = 0.5 GHz

f = 1 GHz

Noise Figure
dC = 10 mAdc, Vce = 1Vdc)

16.5
17

MPS911

f = 0.5 GHz
f = 1 GHz

MMBR911Lf = 0.5 GHz

MPS911

y, >

*-**

M MBR91 1L

'/
1/
'

vrE = 1t V
1 == 1GH

lC. COLLECTOR CURRENT ImA)

Rgure 1. Current Gain-Bandwidth versus

Collector Current @ 1 GHz

MOTOROLA RF DEVICE DATA

2-252

f = 1 GHz

?**

1.7
2.7

2.9

MPS911, MMBR911L

Figure 2. Input Capacitance versus

Base-Emitter Voltage
(a)TO-92MPS911

(b) SOT-23 MMBR911L

2.5

% 2
Cib

ii.5

I 15
"Cjb-

'=>

1
z

^0.5

= 1 Mh

"0.5

VB. BASE-EMITTER VOLTAGE (Vdc)

Vbe. BASE-EMITTER VOLTAGE (Vdc)

Rgure 3. Output Capacitances versus

Collector-Base Voltage
(a) TO-92 MPS911

(b) SOT-23 MMBR911L

2.5

I 2

a 2

= 1M

Si 1 e;

3 '

Cob

~0.5
8

0.5

Ccb

Vcb, COLLECTOR-BASE VOLTAGE (Vdc)

Figure 4. Gain at Noise Figure versus

Collector Current

(a)TO-92MPS911

(b) SOT-23 MMBR911L

1
1
f = 500 MHz

1 16

\ -

IG)

t = 1GI Ir

o
z

Vce - 10V
20

vc ; = 10V

t. COLLECTOR CURRENT ImA)

lC. COLLECTOR CURRENT (mAI

MOTOROLA RF DEVICE DATA

2-253

MPS911, MMBR911L

Figure 5. Noise Figure versus Collector Current

(a)TO-92MPS911

(b) SOT-23 MMBR911L

1 = IG

Hi
.

. f = 500 MH2 _^- 500 MrU

Vce = 10V

lC, COLLECTOR CURRENT (mAI

lC. COLLECTOR CURRENT (mA)

Figure 6. Gain at Noise Figure and Noise

Figure versus Frequency
(a)TO-92MPS911

(b) SOT-23 MMBR911L

</t

Vce = 10V
lC = 10nlA

0
02

0.5

f. FREQUENCY (GHzl

(.FREQUENCY (GHz)

Figure 7. Maximum Unilateral Gain and

Insertion Gain versus Frequency
(a) TO-92 MPS911

(b) SOT-23 MMBR911L

VCE = ov
lC = 30 mA

iyMA

*=20
J5*
W

515
10

5
02

0.5

I. FREQUENCY (GHzl

I. FREQUENCY (GHz)

MOTOROLA RF DEVICE DATA

2-254

MPS911, MMBR911L

TO-92 MPS911
+ 90

INPUT AND OUTPUT REFLECTION COEFFICIENTS

versus FREQUENCY

FORWARD AND REVERSE TRANSMISSION

COEFFICIENTS versus FREQUENCY

Vce = 10 V, lc = 30 mA

VCE = 10 V. 'C = 30 mA

COMMON EMITTER S-PARAMETERS

vce

(Volts)

(mA)

(MHz)

S21

S11

S22

Pill

|S21I

<-4>

IS12I

B22l

*-4>

200

0.78

-46

4.42

134

0.06

0.95

-18

500

0.46

-107

3.35

0.10

-30

0.30

172

2.23

0.14

56
54

0.78

1000

-48
-107

1500

0.41

118

1.66

0.20

0.66
0.57

2000

0.60

1.43

0.29

0.46

-70

200

0.72

-55

8.75

126

0.05

0.87

-23

500

0.31

-107

5.23

0.09

0.68

-31

-46

1000

0.18

178

3.05

0.15

0.57

1500

0.27

2.22

0.22

0.50

-66

2000

0.45

122
94

1.90

0.30

0.38

-97
-24

200

0.48

-64

12.79

114

0.04

0.74

500

0.16

-100

6.19

0.09

0.60

-29

1000

0.09

165

3.45

0.17

-44

1500

112

2.50

0.25

2000

0.22
0.41

0.50
0.41

2.14

0.32

0.26

-98

200

0.29

-67

15.30

106

0.04

0.65

-23

500

0.08

-92

6.76

0.09

0.55

-27

1000
1500

0.06

144

3.71

0.17

75
64

0.46

-43

0.20

108

2.65

0.25

0.37

-63

2000

0.38

2.25

0.32

0.23

-94

200

0.20

-70

16.04

103

0.04

0.61

-22

500

0.05

-97

6.90

0.09

0.53

-25

1000

0.07

138

3.76

0.17

0.46

-41

1500

0.20

2.68

0.25

0.37

-61

2.28

0.32

0.24

-91

15.26

0.04

0.62

-18
-23

2000

0.38

109
90

200

0.13

-78

-65

500

0.03

-145

6.48

0.09

0.56

1000

0.11

126

3.55

0.17

0.49

-40

1500

0.24

105

2.56

0.25

0.39

-62

2000

0.43

2.17

0.32

0.25

-95

MOTOROLA RF DEVICE DATA

2-255

MPS911, MMBR911L

SOT-23 MMBR911L
+ J50

INPUT/OUTPUT REFLECTION COEFRCIENTS

versus FREQUENCY

FORWARD AND REVERSE TRANSMISSION

COEFRCIENTS versus FREQUENCY

Vce = 10 V, lc = 30 mA

COMMON EMITTER S-PARAMETERS

vce

(Volts)

(mA)

(MHz)

S21

S11

S22

S12

Pill

ISail

IS12I

t-4>

IS22I

s-4>

200

0.82

-45

4.14

145

0.06

0.88

-16

500

0.60

-96

3.23

112

0.09

0.71

-27

1000

0.47

-149

2.16

0.11

0.62

-34

1500

0.46

-179

1.59

0.13

0.58

-43

2000

0.47

162

1.35

0.16

0.56

-51

200

0.66

-63

8.63

134

0.75

-25

0.55

-31

0.48

-36

500

0.43

-117

5.29

100

0.05
0.07

1000

037

-163

3.05

0.11

1500

0.38

176

2.17

0.15

0.45

-44

2000

0.40

160

1.81

0.19

0.43

-51

-83

12.70

200

0.49

124

0.04

0.62

-30

500

0.33

-134

6.42

0.07

0.44

-32

1000

0.32

-171

3.53

0.12

0.41

-36

1500

0.35

173

2.46

0.16

0.38

-45

2000

0.37

159

2.04

0.20

0.35

-52

200

0.36

-103

15.25

114

0.03

0.52

-32

500

0.28

-149

6.95

0.06

0.39

-30

1000

0.29

-176

3.73

0.12

0.37

-35

1500

0.33

172

0.17

0.34

-43

0.36

158

2.60
2.14

2000

0.21

0.32

-52

200

0.32

-114

15.64

109

0.03

-29

500

0.27

-156

6.92

0.06

1000

0.29

-178

3.71

0.12

0.48
0.38
0.37

1500

0.34

170

2.58

0.16

0.34

-44

2000

0.37

156

2.13

0.21

0.32

-51

MOTOROLA RF DEVICE DATA

2-256

-27

-33

MPS1983 (See MPS901)

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MPS3866
Die Source Same as 2N3866

The RF Line
lc = 400 mA
MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

3.5

Vdc
Adc

NPN SILICON

Collector Current Continuous

0.4

Total Device Dissipation <& T^ = 25C

625

5.0

mW/C

Derate above 25C

Total Device Dissipation (a Tq = 25C

Derate above 25C

Tj. Tstg

Operating and Storage Junction

Temperature Range

HIGH FREQUENCY
TRANSISTOR

1.5

Wans

mW/C

-55 to +150

THERMAL CHARACTERISTICS

Symbol

Max

Unit

Thermal Resistance, Junction to Case

Rftjc

83.3

c/w

Thermal Resistance, Junction to Ambient

RflJA

200

CAV

Characteristic

CASE 29-04, STYLE 2

TO-226AA

(TO-92)

ELECTRICAL CHARACTERISTICS (Ta = 25Cunless otherwise noted.)

Symbol

Min

V(BR)CER

Vdc

VCEO(sus)

Vdc

V(BR)EBO

3.5

Vdc

Characteristic

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC = 5.0 mAdc, Rbe = 10 n)

Collector-Emitter Sustaining Voltage

(lC = 5.0 mAdc, Ib = 0)

Emitter-Base Breakdown Voltage

(Ig = 100 uAdc, lc = 0)

Collector Cutoff Current

'CEO

0.02

5.0

mAdc

IVCE = 28 Vdc, lB = 0)
Collector Cutoff Current

mAdc

>CEX

(Vce = 30 Vdc, VBe = -1.5 Vdc (Rev.), TC = 150C)

(Vce = 55 Vdc, Vbe = -1.5 Vdc (Rev.)

0.1

Emitter Cutoff Current

ebo

0.1

mAdc

(VBE = 3.5 Vdc, lc = 0)

ON CHARACTERISTICS

DC Current Gain

hFE

(lC = 360 mAdc, Vce = 5.0 Vdc)(1)

dC = 50 mAdc, Vce = 5.0 Vdc)

5.0
10

Collector-Emitter Saturation Voltage

dC = 100 mAdc, Ib - 20 mAdc)

VcE(sat)

200
1.0

Vdc

SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product

500

MHz

(lC = 50 mAdc, VCe = 15 Vdc, f = 200 MHz)

Output Capacitance

cobo

3.0

(Vcb = 28 Vdc, l = 0, f = 1.0 MHz)

FUNCTIONAL TEST

Amplifier Power Gain

Gpe

(Vce = 28 Vdc, Pout = 1.0 W, f = 400 MHz)

Collector Efficiency

(Vce = 28 Vdc, Pout = 1.0 W, f = 400 MHz)

(1) Pulse Test: Pulse Width s 300 us, Duty Cycle =s 2.0%.

MOTOROLA RF DEVICE DATA

2-257

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRA0500-19L
The RF Line

UHF Power Transistor

... designed primarily for wideband, large-signal output and driver amplifier stages to

8dB

500 MHz.

TO 500 MHz
19 WATTS
BROADBAND
UHF POWER
TRANSISTOR

Designed for Class A Linear Power Amplifiers

Specified 19 Volt, 500 MHz Characteristics:
Output Power 19 Watts, 1 dB Compression
Power Gain 8 dB Min, Small-Signal
Built-in Matching Network for Broadband Operation
Gold Metallization for Improved Reliability

Diffused Ballast Resistors

CASE 145D-01. STYLE 1

(.380 SOE)

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

VEBO

3.5

Vdc

117
0.667

Watts
W/C

Rating

Total Device Dissipation <5> Tc = 25C

Derate above 25C

Operating Junction Temperature

Storage Temperature Range

200

Tstg

-65 to +150

Symbol

Max

RfJJC

1.5

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case (Tc = 70C)

Unit

CAV |

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage dc = 25 mA, Ib = 0)

V(BR)CEO

Collector-Emitter Breakdown Voltage dc = 25 mA, Vbe = 0)

V(BR)CES

Vdc

Collector-Base Breakdown Voltage dc = 25 mA, Ig = 0)

V(BR)CBO

Vdc

Emitter-Base Breakdown Voltage (Ie = 5 mA, lc = 0)

V(BR)EBO

3.5

Collector Cutoff Current (Vcb = 19 V, l = 0)

ICBO

Vdc

Vdc
mAdc

ON CHARACTERISTICS

DC Current Gain dc = 1 A, Vce = 5 V)

"FE

DYNAMIC CHARACTERISTICS

Output Capacitance (Vcb = 24 V, l = 0, f = 1 MHz)

Cob

pF
(continued)

MOTOROLA RF DEVICE DATA

2-258

MRA0500-19L

ELECTRICAL CHARACTERISTICS continued

Characteristic

Symbol

Min

GSS

Typ

Max

Unit

FUNCTIONAL TESTS

Common-Emitter Amplifier Small-Signal Gain

(Vce = 19 V, Pjn = 1 mW, f = 500 MHz)

Load Mismatch

No Degradation in

(Vce = 19 V. lc = 3.5 A, Pout = 19 W, f = 500 MHz,

Output Power

Load VSWR = oo:1. All Phase Angles)

Overdrive (Vce = 19 V lc = 3.5 A, f = 500 MHz)

P'"over

(No degradation)

Output Power, 1 dB Compression Point

PoldB

(Vce = 19 V, f = 500 MHz, lc = 3.5 A)

MOTOROLA RF DEVICE DATA

2-259

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRA0510-50H

The RF Line

UHF Power Transistor

... designed primarily for wideband, large-signal output and driveramplifier stages in

7dB

the 500 to 1000 MHz frequency range.

Designed for Class AB Linear Power Amplifiers

500-1000 MHz
50 WATTS
BROADBAND
UHF POWER
TRANSISTOR

Specified 28 Volt, 1000 MHz Characteristics:

Output Power 50 Watts
Power Gain 7 dB Min, Class AB

Built-in Matching Network for Broadband Operation

Gold Metallization for Improved Reliability

Diffused Ballast Resistors

Hermetic Package for Military/Space Applications

CASE 391-01, STYLE 1

(HLP-42)

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VcEO

Vdc

Collector-Base Voltage

VcbO

Vdc

Emitter-Base Voltage

VEBO

Vdc

Total Device Dissipation (<i Tq = 25C

125

Watts

0.715

W/C

200

Tstg

-65 to +200

Symbol

Max

Unit

Rtfjc

1.4

CAV

Derate above 25C

Operating Junction Temperature

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, RF,Junction to Case (Tc = 70C)

ELECTRICAL CHARACTERISTICS
Symbol

Min

Collector-EmitterBreakdown Voltage dc = 25 mA, Vbe ~ 0)

V(BR)CES

Collector-Base Breakdown Voltage dc = 25 mA, lg = 0)

V(BR)CBO

Emitter-Base Breakdown Voltage (Ie = 5 mA. lc = 0)

V(BR)EBO

Collector-Emitter Breakdown Voltage dc = 25 mA, Rbe = 1 ft)

V(BR)CER

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS (Note 1)

Collector Cutoff Current (Vcb = 30 V, Ie = 0)

ICBO

Vdc
Vdc
Vdc

Vdc

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain dc = 1A, Vce = 5V)

C0D

DYNAMIC CHARACTERISTICS (Note 1)

Output Capacitance (Vcb = 28 V, Ig =0, f = 1MHz)

Note 1. Each transistor chip measured separately.

pF
(continued)

MOTOROLA RF DEVICE DATA

2-260

MRA0510-50H
ELECTRICAL CHARACTERISTICS continued
Symbol

Characteristic

Typ

Min

Unit

FUNCTIONAL TESTS (Note 2)

GPEi

Common-Emitter Amplifier Power Gain

(VcE = 28 V, Pout = 50 W, f = 1 GHz. IcQ = 2 x 120 mA)

Load Mismatch

(VCE = 28 V, lCQ = 2 x 120 mA, Pout

No Degradation in
Output Power

50 W, f = 1 GHz.

Load VSWR = 5:1, All Phase Angles)

GPE2

Broadband Power Gain

6.5

(Vce 28 V, Pout = 45 W, f = 500 MHz& 1 GHz.

ICQ = 2 x 120 mA)
Note 2. Both transistor chips operating in push-pull amplifier.

TYPICAL CHARACTERISTICS

JX y/
b

Vcc = 2J V
Po = 50 rV
ONE SIDE

ONLY y
4

vcc => 28V

Po = SOW

/ R

ONES IDEONLY
2

r?
.JX
0

500

600

700

BOO

900

1000

f. FREQUENCY (MHz)

Rgure 1. Input Impedance versus Frequency

500

600

700

800

900

1000

I. FREQUENCY (MHz)

Figure 2. Output Impedance versus Frequency

MOTOROLA RF DEVICE DATA

2-261

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRA0610
Series

The RF Line

UHF Power Transistors

... designed primarily for wideband, large-signal outputand driver amplifier stages in

7 to 7.8 dB

the 600 to 1000 MHz frequency range.

Designed for Class C, Common Base Power Amplifiers

600-1000 MHz
3 TO 40 WATTS

Specified 28 Volt, 1000 MHz Characteristics:

Output Power 3 to 40 Watts
Power Gain 7 to 7.8 dB Min, Common Base
Collector Efficiency 50 to 55%

BROADBAND
UHF POWER
TRANSISTORS

Built-in Matching Network for Broadband Operation

Gold Metallization for Improved Reliability

Diffused Ballast Resistors

CASE 394-01, STYLE 1

(MRA .25)

MAXIMUM RATINGS

Rating

Symbol

-3

-9

18A

Collector-Base Voltage

VcES

Emitter-Base Voltage

VEBO

3.5

Collector Current Continuous

Operating Junction Temperature

Storage Temperature Range

0.5

1.5

-40A

Unit
Vdc
Vdc

2.5

Adc

200

Tstg

-65 to +150

THERMAL CHARACTERISTICS
Symbol

Characteristic

Thermal Resistance, RF, Junction to Case

Rwc

Max

Unit

2.5

"C/W

ELECTRICAL CHARACTERISTICS
Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-EmitterBreakdown Voltage
dC = 20 mA, Vbe = 0)
(lC = 60 mA, Vbe = 0)
dc = 100 mA, Vbe = >
dC = 200 mA, Vbe = 0)
Emitter-Base Breakdown Voltage
(IE = 0.25 mA, lc = 0)
(IE = 0.75 mA, lc = 0)
(IE = 1.25 mA, lc = 0)
(IE = 2.5 mA, lc = 0)

MRA0610-3
-9
-18A
-40A

Collector Cutoff Current

MRA0610-3

(vCb = 28 v, iE = oi

-9

MRA0610-3
-9
-isa
-40A

V(BR)CES

Vdc
50

50
50

v(BR|EBO

Vdc
3.5

3.5
3.5

3.5

ICBO

0.5
-

mAdc

1.5

-18A

2.5

-40A

(continued)

MOTOROLA RF DEVICE DATA

2-262

MRA0610 Series
ELECTRICAL CHARACTERISTICS continued
Typ

Symbol

Characteristic

Max

Unit

ON CHARACTERISTICS

hFE

DC Current Gain

(lC = 0.1 A. VCe = 5 V)

(lC = 0.3 A. Vce = 5 V)
Oc = 0.5 a, vCe = 5 v)
dc = i a, vCe = 5 v)

100

MRA0610-3
-9

100

-18A

100

-40A

100

DYNAMIC CHARACTERISTICS

Output Capacitance

MRA0610-3

(Vcb = 28 v, ie = o, f = i mhz)

Cob

- 9

-18A
-40A

4.5

14
28

FUNCTIONAL TESTS

Common-Base Amplifier Power Gain

(VCe
(VCe
(Vce
(Vce

=
=
=
=

28 V, Pout
28 V, Pout
28 V, Pout
28 V, Pou,

=
=
=
=

MRAL0610-3
-9
-18A
-40A

7.8

28 V, Pout
28 V, Pout
28 V, Pout
28 V, Pout

7.8
7.8
7

Collector Efficiency

(VCE =
(Vce =
(Vce =
(VCe =

GPB

3 W, f = 0.6 & 1 GHz)

9 W, f = 0.6 fit 1 GHz)
18 W, f = 0.6 & 1 GHz)
40 W, f = 0.6 & 1 GHz)

= 3 W. f = 0.6 8t 1 GHz)
= 9 W, f = 0.6 & 1 GHz)
= 18 W, f = 0.6 & 1 GHz)
= 40 W, f = 0.6 & 1 GHz)

MRAC610-3
-9
-18A
-40A

55
50

TYPICAL CHARACTERISTICS

MRA0610-3 3 WATTS BROADBAND

'Pin - 0.4VV
3

Pjn = 0.3W
2

Ai = 0-2W/

&
t-

^
o

1.5

Pin = 0.15 W

"-"^

Figure 2. Series Equivalent Input/Output Impedance

0.8

VCC = 28 V
Pin = 0.1W

0.6

0.4

0.3

b
z

0.2

GOO

700

800

900

1000

^/po =3V\

f. FREQUENCY (MHj)

Figure 1. Power Output versus Frequency

600

700

800

900

1000

f. FREQUENCY (MHz)

Rgure 3. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-263

MRA0610 Series
TYPICAL CHARACTERISTICS

MRA0610-9 9 WATTS BROADBAND

Rgure 5. Series Equivalent Input/Output Impedance

600

700

800
900
f, FREQUENCY (MHz)

1000

VCC = 28 V

Figure 4. Power Output versus Frequency

sP0 = 9 W

600

700

800
900
f, FREQUENCY IMHil

1000

Rgure 6. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-264

MRA0610 Series
TYPICAL CHARACTERISTICS

MRA0610-18A 18 WATTS BROADBAND

Pin = W

Pin =2Wj

Pin = 1.6W

_ '5

i.
i
o

^"*

f = 0.6 GHz

Pin = L3W

Pin = 1 W
~~~

Pin = 0.6W

3
"

Pin = 0.4V1

600

700

800

Figure 8. Series Equivalent Input/Output Impedance

Vce = 28 V

900

f, FREQUENCY (MHz)

Figure 7. Power Output versus Frequency

Po =

8wy

600

700

800

900

1000

f, FREQUENCY (MHzl

Rgure 9. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-265

MRA0610 Series
TYPICAL CHARACTERISTICS

MRA0610-40A 40 WATTS BROADBAND

Pin = 6-8 W

p.-.T'sMr

40
30

Pin = 3.5W

Pin = 2.5W

5 ,0
1 8

Pen = 15 V,i

SF,

1 .
o? 4

Pj = 1W

600

700

800

900

1000

Rgure 11. Series Equivalent Input/Output Impedance

Vce = 28 V

(.FREQUENCY (MHz)

Rgure 10. Power Output versus Frequency

-\
&

Po = 40W
a

N
\%

z
=

0.1

700

800

900

0.01

1000

f. FREQUENCY (MHz)

=
600

Rgure 12. Efficiency versus Frequency

0.001

110

130

150

170

190

210

Tj. JUNCTION TEMPERATURE ("CI

Figure 13. MTTF Factor versus Junction Temperature

Note: Divide by lc2 to obtain metal lifetime in hours

MOTOROLA RF DEVICE DATA

2-266

MRA0610 Series

MRA0610-3

220pF
Chip

Output

'Foilwraporplatearound lo groundplane.Board material 0 020 inchglasslelionv = 2.55.

(1) Bypasscapacitor to ground lorshuntinductor (220pFchip)
(2) Use 8+ bypassolOOl and \\t capacitorsat this poml

Rgure 14. Test Circuit Boards for MRA0610 Series

(Not to Scale)

MOTOROLA RF DEVICE DATA

2-267

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRA0610H
Series

The RF Line

UHF Power Transistors

... designed primarily for wideband, large-signal outputanddriver amplifier stagesin

7.8 dB
600-1000 MHz

the 600 to 1000 MHz frequency range.

Designed for Class C, Common Base Power Amplifiers

3 TO 18 WATTS
BROADBAND
UHF POWER
TRANSISTORS

Specified 28 Volt, 1000 MHz Characteristics:

Output Power 3 to 18 Watts
Power Gain 7.8 dB Min, Common Base

Collector Efficiency 50 to 55%

Built-in Matching Network for Broadband Operation

Gold Metallization for Improved Reliability
Diffused Ballast Resistors

Hermetic Package for Military/Space Applications

CASE 393-01, STYLE 1

(HLP-11)

MAXIMUM RATINGS

Rating

Symbol

Collector-Base Voltage

VCES

Emitter-Base Voltage

VEBO

Collector Current Continuous

Operating Junction Temperature

Storage Temperature Range

18H

50
3.5
0.5

Unit
Vdc
Vdc

1.5

2.5

Adc

200

Tstg

-65 to +200

THERMAL CHARACTERISTICS
Symbol

Characteristic

Thermal Resistance, RF, Junction to Case

Max

R9JC

Symbol

Min

Typ

Unit
4

C/W

Max

Unit

ELECTRICAL CHARACTERISTICS
Characteristic

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC = 20 mA, Vbe = 0)
(lC = 60 mA, Vbe = 0)
dC = 100 mA, Vbe = 0)

MRA0610- 3H
- 9H
-18H

Emitter-Base Breakdown Voltage

(IE = 0.25 mA, lc = 0)

MRA0610- 3H

V(BR)CES

Vdc
50

Vdc
3.5

- gH

3.5

(l = 1.25 mA, lc = 0)

-18H

3.5

MRA0610- 3H

(vCb = 28 v, iE = o)

. sh

V(BR|EBO

<l = 0.76 mA, lc = 0)

Collector Cutoff Current

50
50

ICBO
-

-18H

0.5
1.5
2.5

mAdc

ON CHARACTERISTICS
DC Current Gain

dC = 100 mA, Vce = 5 V)

(lC = 300 mA, Vce = 5 V)
dC = 500 mA, Vce = 5 V)

hFE
MRA0610- 3H
- 9H
-18H

10
10
10

100
100

100

(continued)

MOTOROLA RF DEVICE DATA

2-268

MRA0610H Series

ELECTRICAL CHARACTERISTICS continued

Min

Symbol

Characteristic

| Typ

Max

Unit

4.5

DYNAMIC CHARACTERISTICS

Output Capacitance

MRA0610- 3H

(Vcb = 28 V,Ie = 0, f = 1 MHz)

Cob

- 9H
-18H

10
14

FUNCTIONAL TESTS
dB

GpB

Common-Base Amplifier Power Gain

(Vce = 28 V, Pout = 3 W, f = 600 MHzand 1 GHz) MRA0610- 3H

(Vce = 28 V, Pout = 9 W, f = 600 MHz and 1 GHz)
- 9H
(Vce = 28 V, Pout = 18 W, f = 600 MHz and 1 GHz)
-18H

7.8

Collector Efficiency

(Vce = 28 V, Pout = 3 W, f = 600 MHz and 1 GHz) MRA0610- 3H

(Vce = 28 V,P0ut = 9 W, f = 600 MHz and 1 GHz)
- 9H
(Vce = 28 V, Pout = 18 W, f = 600 MHz and 1 GHz)
-18H

55
55

TYPICAL CHARACTERISTICS

Note: Divide by lc2 to obtain metal lifetime in hours.

100

10 =

EE\

^\
3

0.1

"' =
E

*" \

0.01

110

130

150

170

190

210

Tj, JUNCTION TEMPERATURE lC)

Rgure 1. MTTF Factor versus Junction Temperature

MOTOROLA RF DEVICE DATA

2-269

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRA1000-3.5L
The RF Line

UHF Power Transistor

... designed primarilyfor wideband, large-signal output and driver amplifierstages to

10 dB

1000 MHz.

TO 1000 MHz
3.5 WATTS
BROADBAND
UHF POWER

Designed for Class A Linear Power Amplifiers

Specified 19 Volt, 1000 MHz Characteristics:
Output Power 3.5 Watts

TRANSISTOR

Power Gain 10 dB, Small-Signal

Built-in Matching Network for Broadband Operation
Gold Metallization for Improved Reliability
Diffused Ballast Resistors

CASE 145D-01. STYLE 1

(.380 SOE)
MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

VEBO

3.5

Vdc

Watts

0.125

W7C

Total Device Dissipation (S Tc = 25C

Derate above 25C

Operating Junction Temperature

Storage Temperature Range

200

Tstg

-65 to +150

Symbol

Max

THERMAL CHARACTERISTICS

ifl

Characteristic

Thermal Resistance, Junction to Case (Tc = 70C)

Unit

RaJC

c/w

ELECTRICAL CHARACTERISTICS
Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-EmitterBreakdown Voltage dc = 10 mA, Ib = 0)

V(BR)CE0

Collector-Emitter BreakdownVoltage dc = 10 mA,Vbe - )

V(BR)CES

Collector-Base Breakdown Voltage dc = 10 mA, Ie = 0)

V(BR)CBO

Emitter-Base Breakdown Voltage (Ie = 5 mA, lc = 0)

V(BR)EBO

3.5

Collector Cutoff Current (Vcb = 30 V, Ie = 0)

(CBO

Vdc
Vdc
Vdc

Vdc
mAdc

ON CHARACTERISTICS

| DC Current Gain dc = 250 mA, Vce = 5V)

hFE

Cob

DYNAMIC CHARACTERISTICS

| Output Capacitance (Vcb = 24 V. Ig = 0, f = 1MHz)

(continued)

MOTOROLA RF DEVICE DATA

2-270

MRA1000-3.5L

ELECTRICAL CHARACTERISTICS continued

Characteristic

Symbol

Min

GSS

Typ

Unit

Max

FUNCTIONAL TESTS

Common-Emitter Amplifier Small-Signal Gain

(Vce = 19 V. Pin = 1 nW.f = 1 GHz,lc = 600 mA)

<l>

Load Mismatch

No Degradation in
Output Power

(Vce " 19 V, lc = 600 mA, Pout = 3.5 W, f = 1 GHz,

Load VSWR = oo:1, All Phase Angles)

pinover

Overdrive (Vce = 19 V, lc = 600 mA, f = 1 GHz)

1.75

(No degradation)

TYPICAL CHARACTERISTICS

vce

(Volts)

(mA)

(GHz)

600

Sll
Mag

S12

S21

S22

Mag

0.03

0.55

-164

0.5

0.91

174

1.78

0.6
0.7

0.9

173

1.64

0.03

0.58

-170

0.87

171

1.53

0.03

0.63

-159

0.8

0.85

168

1.61

0.03

0.68

-157

0.9

0.82

168

1.49

0.03

0.74

-158

0.78

168

1.5

-7

0.03

-4

0.83

-160

Rgure 1. Common Emitter S-Parameters

fnq.

Zn(Qhflts)

Z'OL

(MKrf

500

-&31

2.36

14.6
112
11.7
955
7.72

1000

4.67

2.53
3.18
4.14
5.13
5.33
5.04

600
700

800

2.74

-4.07
-aos

3.36
4.12

-9.65
-a72

4.99

-8.74

036

VCC= WV,PC = 3.5W

Z*ol Conjugateof the optimum lead impedanceinto which the device output operatesat a given frequency, output power and voltage.

Rgure 2. Z(N and Z*QL versus Frequency

100

200

300

400

500

600

700

800

Pj, INPUT POWER (mW)

Rgure 4. Power Input versus Power Output

Zo = 5oa
Vce = 19 V, P0 = 3.5 W, Z0 = 50 11

Rgure 3. Series Equivalent Input/Output Impedance

MOTOROLA RF DEVICE DATA

2-271

MRA1000-3.5L

VSUPPLY = 21.6Vdc
VSUPPLY

VBIAS

3x1111

Vce = '9vdc
1T1P41

rfinH

zTJ-Hh-<RF0UT

LI 7T. 20 Gauge on 200 Mil Ferrite Toroid

L2 8T. 20 Gauge. 100 Mil Dia.

L3 11T. 20 Gauge, 100 Mil Dia.
L4 8T, 20 Gauge, on 275 Mil Ferrile Toroid

CI, C3, C5, C6. C7 500 pF ATC

C2.C4 0.8-10 pFJFD
C9 0.1 /iF. 50 V. Ceramic

Zl 50 !1. microstripline. ( = 0.110A

Z2 10 II, microstripline. < = 0.162A

Z3, Z4 50 II, microstripline, ( = 0.052A
Z5 24 0, microstripline. ( - 0.080A
Z6 50 !!, microstripline, < - 0.125A

17 k!l | 2.7 Yili '80!^ 4.7 '

vb/as

Figure 6. Bias Circuit

R1.R2 1511. 1/4 Watt

Figure 5. 1 GHz Test Circuit

Test Circuit Mask

MRA1000-3.5L
(Not lo Scale)

Board Material = 1/32 Teflon-Fiberglass

Figure 7. Test Circuit Mask

MOTOROLA RF DEVICE DATA

2-272

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRA1000-7L
The RF Line

UHF Power Transistor

... designed primarily for wideband, large-signal outputand driver amplifier stages to

9dB
TO 1000 MHz
7 WATTS
BROADBAND
UHF POWER
TRANSISTOR

1000 MHz.

Designed for Class A Linear Power Amplifiers

Specified 19 Volt, 1000 MHzCharacteristics:
Output Power 7 Watts
Power Gain 9 dB Min, Small-Signal

Built-in Matching Network for Broadband Operation

Gold Metallization for Improved Reliability
Diffused Ballast Resistors

CASE 145D-01. STYLE 1

(.380 SOE)

MAXIMUM RATINGS
Rating

Symbol

Value

Unit
Vdc
Vdc

Collector-Emitter Voltage

VCEO

Collector-Base Voltage

VCBO

Emitter-Base Voltage

VEBO

3.5

Vdc

Watts

0.25

W7T

Total Device Dissipation < ' Tc = 25C

Derate above 25C

200

Operating Junction Temperature

Storage Temperature Range

'stg

-65 to +150

Symbol

Max

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case (Tc = 70C)

Unit
C/W

Rfljc

ELECTRICAL CHARACTERISTICS
Characteristic

Typ

Max

Unit

Symbol

Min

V(BR)CEO

Vdc
Vdc
Vdc

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage dc = 20 mA, Ig = 0)

V(BR)CES

Collector-Base Breakdown Voltage dc = 20 mA, Ie = 0)

V(BR)CBO

Emitter-Base Breakdown Voltage Oe = &mA- 'C = )

V(BR)EBO

3.5

Collector-Emitter Breakdown Voltage dc = 20 mA, Vbe = >

Collector Cutoff Current (Vcb = 19 V, Ig = 0)

Vdc
15

CBO

mAdc

ON CHARACTERISTICS

DC Current Gain dc = 1 A, Vce = 5 V)

"FE

DYNAMIC CHARACTERISTICS

Output Capacitance (Vcb = 24 V, Ie = 0, f = 1 MHz)

Cob

pF
(continued)

MOTOROLA RF DEVICE DATA

2-273

MRA1000-7L
ELECTRICAL CHARACTERISTICS continued
Characteristic

Symbol

Typ

Min

Max

Unit

FUNCTIONAL TESTS

Common-Emitter Amplifier Small-Signal Gain

<VCE = 19 V,f = 1 GHz, lC = 1.2 A)

Gss

Load Mismatch

No Degradation in
Output Power

(VCe = 19 V,lC = 1.2 A, Pout = 7 W, f = 1 GHz.

Load VSWR = x:1, All Phase Angles)
Overdrive(Vce = 19 V,lc = 1.2 A, f

1 GHz)

P'"over

(No degradation)

Output Power, 1 dB Compression Point

3.5

PoldB

(VCE = 19 V.f = 1 GHz, IC = 1.2 A)

TYPICAL CHARACTERISTICS
S11

S21

S22

S12

VCE

(Volts)

(mA)

(GHz)

Mag

1200

0.5

0.95

174

1.08

0.02

0.7

-179

0.6

0.94

173

1.01

0.03

0.7

-177

0.7

0.92

171

0.97

0.03

0.71

-176

0.8
0.9

0.9

169

0.03

0.72

-175

0.87

168

0.99

0.03

0.76

-174

0.83

168

0.99

-9

0.03

0.82

-174

0.97

Figure 1. Common Emitter S-Parameters

Fnsq.
AMU

500

600
700
800
900
1000

Zol* lOhms)

Za(Ohra)

fan

869

0.51

8.69
8.39
8.01
7.00
4.95

-1.14
-1.74

1.30
1.59
2.05
2.67

2.53
301
3.88
4.63
5.19
5.17

-2.21
-2.74
-2.64

3.40
4.61

VCC = 19 V, P0 = 7 W

Rgure 2. Z|n and Zql* versus Frequency

9
8
7

0.2

0.4

0.6

0.8

1.2

1.4

Pjn.INPUT POWER (WATTS)

Rgure 3. Power Output versus Power Input

Vce = 19 V, P0 = 7 W, Zo = 50 Ohms

Figure 4. Series Equivalent Input/Output Impedance

MOTOROLA RF DEVICE DATA

2-274

MRA1000-7L

"QC15 |*JC6 P}C7 ..

1J ^Tixi797

m&u

652

-MILS-f-MILS^HMILS-

CIO

RF
OUT

1 =_tCJ2 ?ci3

C8 33 pF ATC
C9. C13 0.3-1.3 pF Johanson
C10 6.2pF ATC
C11 1-16 pF Johanson
C12 3pFATC
C14 33 pF ATC
C15 18 pF ATC
2000 Mils
T1. T2 50 Ohm. I
Zl 12.5 Ohm. i 914 Mils. 32 Mil. Telion (, 2.55)

L1 7T. 20 Gauge on 200 Mil Forritc Torroid

12 7T. 20 Gauge. 100 Mil Dia.
L3 5T. 20 Gauge. 100 Mil Dia.
L4 8T. 20 Gauge, on 200 Mil Ferrite Torroid
R1.R2 15 Ohm. 14 Watt

CI. C2 500 pF ATC

C3 25 iF, Electrolytic
C4 3.3pF ATC
C5 5.6pF ATC
C6 1.6pF ATC
C7 t.2 pF ATC

Z2 12.5 Ohm. ( - 2392 Mils. 32 Mil, Tollon (.r = 2.55)

Figure 5. 1 GHz Test Circuit

VSUPPLY
3xiin

.122 $ $

5W
vcc

VBIAS

Figure 6. Bias Circuit

MRA1000-7L
(Not to Scale)
Board Material

1/32". Glass Teflon, K = 2.55

Figure 7. Test Circuit Mask

MOTOROLA RF DEVICE DATA

2-275

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRA1OOO-14L
The RF Line

UHF Power Transistor

... designed primarily for wideband,large-signal output and driveramplifier stages to

8dB

1000 MHz.

TO 1000 MHz

Designed for Class A Linear Power Amplifiers

14 WATTS
BROADBAND
UHF POWER
TRANSISTOR

Specified 19 Volt, 1000 MHz Characteristics:

Output Power 14 Watts

Power Gain 8 dB, Small-Signal

Built-in Matching Networkfor Broadband Operation

Gold Metallization for Improved Reliability
Diffused Ballast Resistors

CASE 145D-01, STYLE 1

(.380 SOE)

MAXIMUM RATINGS
Rating

Symbol

Value

Collector-Emitter Voltage

VceO

Vdc

Collector-Base Voltage

Vcbo

Vdc

Emitter-Base Voltage

vebo

3.5

Vdc

83
0.48

Watts
W/C

Total Device Dissipation @ Tc = 25C

Derate above 25C

Operating Junction Temperature

Storage Temperature Range

Unit

200

Tstg

-65 to +150

Symbol

Max

Unit

RflJC

2.1

C/W

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case (Tc = 70C)

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

MIn

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter BreakdownVoltage dc = 25 mA, Ir = 0)

V(BR)CEO

Collector-Emitter Breakdown Voltagedc = 25 mA,Vqe = 0)

V(BR)CES

Collector-Base Breakdown Voltage dc = 25 mA, Ig = 0)

V(BR)CBO

Emitter-BaseBreakdownVottage He = 5 mA, lc = 0)

V(BR)EBO

3.5

Collector Cutoff Current (Vcb = 19 V, lg = 0)

>CBO

Vdc

Vdc
Vdc
mAdc

ON CHARACTERISTICS

DCCurrent Gain dc = 1 A, Vce = 5 V)

hFE

C0D

DYNAMIC CHARACTERISTICS

Output Capacitance (Vcb = 24V, lg = 0, f = 1 MHz)

pF
(continued)

MOTOROLA RF DEVICE DATA

2-276

MRA1000-14L

ELECTRICAL CHARACTERISTICS continued

Unit

Max

Typ

Symbol

Characteristic

FUNCTIONAL TESTS

Common-Emitter Amplifier Smatl-Signal Gain

GSS

IVCE = 19 V,Pjn = 1 mW, f = 1 GHz, Ic = 2.4 A)

Load Mismatch

No Degradation in
Output Power

(VcE = 19 V, Ic = 2.4 A, Pout = 14 W, f = 1 GHz,

Load VSWR = x:1. All Phase Angles)

Overdrive (Vce = 19 V, Ic = 2.4 A, f = 1 GHz)

(No degradation)

Output Power, 1 dB Compression Point

(VCE = 19 V, f = 1 GHz, Ic = 2.4 A)

PoldB

TYPICAL CHARACTERISTICS

***

Vcc = 19V
P0 = 14W

+ JX

'0 = 14W

900

tOO

950

850

900

950

1000

f, FREQUENCY (MHz)

f, FREQUENCY IMHi)

Figure 2. Output Impedance versus Frequency

Figure 1. Input Impedance versus Frequency

S-PARAMETERS

S11

S22

S12

S21

VCE

(Volts)

(mA)

(GHz)

Mag

/.*

Mag

<t>

Mag

L4>

Mag

*-<t>

2400

0.5

0.98

175

0.56

0.02

0.84

177

0.6

0.97

174

0.53

0.02

0.83

177

0.7

0.S6

173

0.5

0.03

0.83

176

0.8

172

0.52

0.03

0.83

176

0.9

0.36
0.94

168

0.5

0.03

0.83

176

0.91

165

0.52

0.03

0.85

175

MOTOROLA RF DEVICE DATA

2-277

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRA1014
Series

The RF Line

Microwave Power Transistors

... designed primarily forwideband, large-signal outputand driver amplifier stages in

7 to 8 dB
1-1.4 GHz
2 TO 35 WATTS
BROADBAND
MICROWAVE POWER
TRANSISTORS

the 1 to 1.4 GHz frequency range.

Designed for Class C, Common Base Power Amplifiers
Specified 28 Volt, 1.4 GHz Characteristics:
Output Power 2 to 35 Watts
Power Gain 7 to 8.2 dB

Collector Efficiency 45 to 50%

Built-inMatching Network for Broadband Operation

Gold Metallization for Improved Reliability
Diffused Ballast Resistors

CASE 394-01, STYLE 1

(MRA .25)

MAXIMUM RATINGS

Rating

Symbol

-2

-12

-35

Unit

Collector-Base Voltage

VcES

Vdc

Emitter-Base Voltage

vebo

3.5

Vdc

Collector Current Continuous

Operating Junction Temperature

200

Tstg

-65 to +150

Storage Temperature Range

0.5

Adc

THERMAL CHARACTERISTICS
Characteristic

Symbol

Thermal Resistance, RF, Junction to Case

R&jc

Max
15

Unit
4.5

2.5

C/W

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

dC = 20 mA, VBE = 0)

(IC = 40 mA, Vbe = 0)

dC = 80 mA, VBE = 0)
dC = 200 mA, Vbe = 0)
Emitter-Base Breakdown Voltage
(l = 0.25 mA, Ic = 0)
E = 0.5 mA, Ic = 0)

MRA1014-2
-6
-12
-35
MRA1014-2
-6

(lE = 1 mA, lC = 0)
(IE = 2.5 mA, Ic = 0)

V(BR)CES

MRA1014-2

(VCb = 28 V, lE = 0)

-6

V(BR)EBO

Vdc
3.5

3.5

ICBO

-12

-12
-35

Collector Cutoff Current

Vdc
50

-35

0.5

mAdc

5
(continued)

MOTOROLA RF DEVICE DATA

2-278

MRA1014 Series

ELECTRICAL CHARACTERISTICS continued

Symbol

Characteristic

Min

Typ

Max

Unit

ON CHARACTERISTICS

hFE

DC Current Gain

dC
(lC
(lC
dc

= 0.1 A, Vce = 5 V)
= 0.2 A, VCE = 5 V)
= 0.4 A, VCE = 5 V)
= 1 a, vCe = 5 v)

MRA1014-2

100

-6

100

-12

100

-35

100

4.5

DYNAMIC CHARACTERISTICS
MRA1014-2

Output Capacitance

(Vcb = 28 V, lE = 0, f = 1 MHz)

Cob

-6
-12

-35

8
12

(1)

FUNCTIONAL TESTS

Common-Base Amplifier Power Gain

(Vce = 28 V, Pout = 6 W, f = 1.0 & 1.4 GHz)

(Vce = 28 V, Pout = 12 W, f = 1.0 & 1.4 GHz)
(VCE = 28 V, Pout = 35 W, f = 1.0 & 1.4 GHz)

MRA1014-2

28 V, Pout
28 V, Pout
28 V, Pout
28 V, Pout

8.2

-6
-12

7.4

7.8

-35

Collector Efficiency

(VCe =
(Vce =
(VCe =
(VCe =

GPB

(Vce = 28 V, Pout = 2 W, f = 1.0 & 1.4 GHz)

7
%

=
=
=
=

2 W, f = 1.0 & 1.4 GHz)

6 W, f = 1.0 & 1.4 GHz)
12 W, f = 1.0 & 1.4 GHz)
35 W, f = 1.0 & 1.4 GHz)

MRA1014-2
-6
-12
-35

(1) Not measureable because of output matching network.

MOTOROLA RF DEVICE DATA

2-279

45
50
50
50

MRA1014 Series

TYPICAL CHARACTERISTICS
MRA1014-2 2 WATTS BROADBAND

Pin = 0.4W

Pin = 0.3W

Pin= 0.2W

Pin = 0.15W

Pjn-"W

Figure 2. Series Equivalent Input/Output Impedance

Vce = 28 V
1

1.1

1.2

1.3

1.4

f. FREQUENCY (MHz)

Rgure 1. Power Output versus Frequency

^\S, = MW
55

1.1

1.2

f, FREQUENCY (MHz)

Figure 3. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-280

MRA1014 Series

TYPICAL CHARACTERISTICS

MRA1014-6 6 WATTS BROADBAND

Figure 5. Series Equivalent Input/Output Impedance

VCc = 28 V
1

1.1

1.2

1.3

f, FREQUENCY (MHz)

Figure 4. Power Output versus Frequency

1.1

Pin = 1.1W

1.2

1.3

1.4

f, FREQUENCY (MHz)

Figure 6. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-281

MRA1014 Series

TYPICAL CHARACTERISTICS

MRA1014-12 12 WATTS BROADBAND

Rgure 8. Series Equivalent Input/Output Impedance

Vce = 28 V
1

1.1

1.3

1.4

(.FREQUENCY (MHz)

Rgure 7. Power Output versus Frequency

\pin =

7
1.1

1.2

1.3

f, FREQUENCY (MHz)

Rgure 9. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-282

MRA1014 Series

TYPICAL CHARACTERISTICS

MRA1014-35 35 WATTS BROADBAND

Pjn = 7W

>m = 55W-

jn4JiW

^in =3.5W
Pin = 2.8W.

Figure 11. Series Equivalent Input/Output Impedance

Vce = 28 V
1

1.1

1.2

1.4

f, FREQUENCY (MHz)

Rgure 10. Power Output versus Frequency

\Pin =7W

1.1

1.2

1.3

f. FREQUENCY (MHz)

Rgure 12. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-283

MRA1014 Series
The graph shown below displays MTTF in hours x ampere2
emitter current for each of the devices. Life tests at elevated
temperatures have correlated to better than r 10% to the theo

retical prediction for metal failure. Sample MTTF calculations

based on operating conditions are included below.

TEST CIRCUIT BOARDS FOR MRA1014 SERIES

NOIE Sceiswl 1

V
MRA1014-2

;\ \
:= \

0.01

1
\

110

130

150

170

Tj, JUNCTION TEMPERATURE IT)

Example of MTTF for MRA1014-12 Conditions

P0 = 12W

Pin = 2 W
Vce 28 V
i) = 50

TFLANGE = 70X
ic

...JSOxPa.oj^A
Ic x VCC

PDISS Pin * VCC. IC - P0 13.99 W

TJUNC = TFLANGE * "JF x PD|SS - 132.9T
MTTF -

0.7 x 106 Hrs.Amp2

ic2

953,095 Hrs

MTTF = 108.8 Yrs

'Foilwrapo' platearound10ground plane Boardmaterial0 020 menglass tetionV = 2 SS

|i| Bypass capacitor lo ground(ISOpFcn.pj
I?) Use B+ bypass ol 0 01 and V capacitors ai litis poini

Figure 13. MTTF Factor

|3) 10 turns 120 enamel dose wound on 0 0<0 mandril

(Normalized to 1 Ampere2 Continuous Duty)

Figure 14. Test Circuit Boards (Not to Scale)

MOTOROLA RF DEVICE DATA

2-284

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRA1014H
Series

The RF Line

Microwave Power Transistors

... designed primarily for wideband, large-signal output and driver amplifier stages in

7.4 to 8 dB
1-1.4 GHz
2 TO 12 WATTS
BROADBAND
MICROWAVE POWER
TRANSISTORS

the 1 to 1.4 GHz frequency range.

Designed for Class C, Common Base Power Amplifiers

Specified 28 Volt, 400 MHz Characteristics:
Output Power 2 to 12 Watts
Power Gain 7.4 to 8 dB

Collector Efficiency 35 to 50%

Built-in Matching Network for Broadband Operation

Gold Metallization for Improved Reliability

Diffused Ballast Resistors

Hermetic Package for Military/Space Applications

CASE 333-01, STYLE 1

(HLP-11)
MAXIMUM RATINGS

Symbol

Rating

-2H

-6H

Collector-Base Voltage

VcES

Emitter-Base Voltage

Vebo

3.5

Collector Current Continuous

Operating Junction Temperature

Storage Temperature Range

-12H

Vdc
Vdc

0.5

Unit

Adc

200

Tstg

-65 to +200

THERMAL CHARACTERISTICS

Characteristic

Symbol

j Thermal Resistance, RF, Junction toCase

Unit

Max

R&jc

4.5

C/W

Symbol

Min

Typ

Max

Unit

ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

dC = 20 mA, Vbe = 0)
(lC = 40 mA, VBe = 0)
dC = 80 mA, VBe = 0)
Emitter-Base Breakdown Voltage

(IE = 0.5 mA, Ic = 0)

(IE = 1 mA, Ic = 0)
dE = 2 mA, Ic = 0)
Collector Cutoff Current

(Vcb = 28 V, lE = 0)

Vdc

V(BR)CES
MRA1014- 2H
- 6H
-12H

50
50

Vdc

V(BR)EBO
MRA1014- 2H
- 6H

3.5

-12H

3.5

MRA1014- 2H

3.5

0.5

ICFJO

- 6H

mAdc

-12H

ON CHARACTERISTICS
DC Current Gain

dc = 100 mA, Vce = 5 V)

dC = 200 mA, Vce = 6 v>
dC = 400 mA, Vce = 5V)

hFE

MRA1014- 2H

- 6H

-12H

100

100
100

(continued)

MOTOROLA RF DEVICE DATA

2-285

MRA1014H Series

ELECTRICAL CHARACTERISTICS continued

Symbol

Characteristic

Min

Typ

Max

Unit

4.5

DYNAMIC CHARACTERISTICS

Output Capacitance

MRA1014- 2H

(Vcb = 28 V, lE = 0, f = 1 MHz)

Cob

- 6H

-12H

FUNCTIONAL TESTS

Common-Base Amplifier Power Gain

GPB

(VCe = 28 V, Pout = 2 W, f = 1.0 & 1.4 GHz)

(Vce = 28 V, Pout = 6 W, f = 1.0 & 1.4 GHz)
(Vce = 28 V, Pout = 12 W, f = 1.0 & 1.4 GHz)

MRA1014- 2H

7.4

-12H

Collector Efficiency

dB
8

- 6H

7.8
%

(Vce = 28 V, Pout = 2 W, f = 1.0 & 1.4 GHz)

(Vce = 28 V, Pout = 6 W, f = 1.0 & 1.4 GHz)
(VCE 28 V, Pout = 12 W, f = 1.0 & 1.4 GHz)

MRA1014- 2H

- 6H

-12H

MOTOROLA RF DEVICE DATA

2-286

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRA1214-55H
The RF Line

Microwave Power Transistor

... designed primarily for wideband, large-signal output and driver amplifier stages in
the 1.2 to 1.4 GHz frequency range.

6.5 dB
1.2-1.4 GHz
50 WATTS
MICROWAVE

Designed for Class C, Common-Base Pulse Power Amplifiers

Specified 28 Volt, 1.4 GHz Characteristics:
Output Power 50 W CW, Min
100 W Pulse, Typ

POWER
TRANSISTOR

Power Gain 6.5 dB Min, CW

Collector Efficiency 45% Min, CW

Built-in Matching Networks Input and Output for Broadband Operation

Gold Metallization for Improved Reliability

Diffused Ballast Resistors

Hermetic Package for Military/Space Applications

CASE 402-01, STYLE 1

(HLP-15M)
MAXIMUM RATINGS

Rating

Collector-Base Voltage
Collector Current Continuous

Operating Junction Temperature

Storage Temperature Range

Symbol

Value

VcES

Vdc

7.5

Adc

Unit

200

Tstg

-65 to +200

Symbol

Max

Unit

ReJC

1.4

CAV

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, RF, Junction to Case

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage dc = 120 mA, Vbe = 0)

V(BR)CES

Collector-Base Breakdown Voltage dc = 15 mA, lg = 0)

V(BR)CBO

V(BR)EBO

3.5

Emitter-Base Breakdown Voltage (Ig = 2 mA, Ic = 0)

Collector Cutoff Current (Vcb = 28 V, Ie = 0)

ICBO

7.2

Vdc
Vdc
Vdc
mAdc

FUNCTIONAL TESTS

Common-Base Amplifier Power Gain

GPB

6.5

Collector Efficiency (VCe = 28 V, Pout = 50 W CW, f = 1.4 GHz)

Load Mismatch

>l>

(Vce = 28 V, Pout = 50 W CW, f = 1.4 GHz)

(VCE = 28 V, Pout = 50 W, f = 1.4 GHz,

Load VSWR = 3:1, All Phase Angles)

MOTOROLA RF DEVICE DATA

2-287

No Degradation in
Output Power

MRA1214-55H
TYPICAL CHARACTERISTICS

120

^V^osat
Pir

=20W^

f^iew^-Pin = 127W

Pjn = 10W_

"50/ts, 10%

Vce = 32V
Pin5W

Pin = 8W

1200

1250

1300

1350

1200

1400

1250

f, FREQUENCY (MHz)

1300

1350

1400

f, FREQUENCY (MHz)

Figure 2. Power versus Frequency Short Pulse

Figure 1. Input Return Loss versus Frequency

100

2 ms, 10%

Vce = 28V

^^^..^Mt

50/is, 10%
2 ms. 10%

Pin = 135W

Jin-11W
Pin = &8W

Pin = 5.5W

1200

1250

1300
1350
f, FREQUENCY (MHz)

1200

1250

1300

1350

1400

f, FREQUENCY (MHz)

Figure 3. Efficiency versus Frequency

Hgure 4. Power versus Frequency Long Pulse

MOTOROLA RF DEVICE DATA

2-288

MRA1214-55H

00,000

10,000

1.000

100
110

120

130

140

150

160

170

180

190

200

Tj. JUNCTION TEMPERATURE (C|

1200

Note: Divide MTTF factor by Ic2

1250

1300

to obtain metal lifetime in hours.

Example Calculation

PqHOO)

14C

Figure 6. Power versus Frequency CW

For P0 = 50 W, ijc = 45%

TF = 50T
.

1350

(.FREQUENCY (MHz)

501100)

'C " TT
= ,-a>-, = 3.97 Amp
vCOc
(281(45)
PO = VCc'c-Po + Pin
= 128)13.97) - 50 W + 11.2 = 72.3 W

Tj = OjcPd + TF = 151*C
MTTF - 254,000 Hours

Figure 5. MTTF versus Junction Temperature

Note: Consult factory for artwork transparency

PART DETAILS
NO.

PURPOSE

VALUE

DESCRIPTION

1-2 mil.

Brass

(1)
(2)
(3)
(4)

Foil wrapped around or through to ground.

DC blocking capacitor
Vqc bypass capacitor to ground.
Positron to obtain maximum output power.
DC filter capacitor to ground.

100 pF
0.1 /iF
120 pF
50 aiF (50 V)

Ceramic Chip (ATC)

Ceramic Chip
Ceramic Chip
Tantalum, Electrolytic

(SI

Wire inductor with Ferrite Beads.

RF input connector.
RF output connector.

#28 AWG
50 ohms
50 ohms

Wire

(6)
(7)

Figure 7. Series Equivalent Input/Output Impedance

"N" Type
"N" Type

BOARD MATERIAL: Double-sided. 20 mil. Glass/Teflon (cr = 2.55) 2 oz. Copper

SUBSTRATE MOUNTING: Solder to brass or copper heat sink (2" x 4.1" x 0.5").

Figure 8. Printed Circuit Board Layout (Not to Scale)

MOTOROLA RF DEVICE DATA

2-289

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRA1300-10L

Advance Information
The RF Line

Microwave Linear
Power Transistor

8.0 dB
500-1500 MHz
10 WATTS
MICROWAVE

... designed primarilyfor wideband, large-signaloutput and driver amplifierstages in

the 500-1500 MHz frequency range.
Designed for Class A Common-Emitter Linear Power Amplifiers

LINEAR POWER
TRANSISTOR

Specified 25 Volt, 1300 MHz Characteristics:

Output Power 10 Watts
Power Gain 8.0 dB, Min

Gold Metallization for Improved Reliability

Diffused Ballast Resistors

MAXIMUM RATINGS

Rating

Symbol

Value

Collector-Emitter Voltage

VcEO

Vdc

Collector-Base Voltage

VcES

Vdc

Emitter-Base Voltage

Unit

VEB0

3.5

Vdc

Power Dissipation

Operating Junction Temperature

200

Tstg

-65 to +150

Symbol

Max

Unit

Rjc

2.1

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage dc = 25 mA, Ir, = 0)

V(BR)CEO

Collector-Emitter Breakdown Voltage dc = 25 mA, V{je - )

V(BR)CES

Collector-Base Breakdown Voltage dc = 25 mA, lg = 0)

V(BR)CBO

Emitter-Base Breakdown Voltage (If; = 5.0 mA, Ic = 0)

V(BR)EBO

3.5

Collector Cutoff Current (Vcb = 25 v- >E = )

CBO

Vdc

Vdc
Vdc
Vdc
20

mAdc

ON CHARACTERISTICS

DC Current Gain (Ic = 1.0 A, Vce = 5.0 V)

hFE

| 20 | | 80 |

DYNAMIC CHARACTERISTICS

Output Capacitance (Vcb = 25 V, Ir; = 0, f = 1.0 MHz)

C0b

pF
(continued)

This document contains information on a new product. Specifications and information herein are subject to change without notice.

MOTOROLA RF DEVICE DATA

2-290

MRA1300-1OL

ELECTRICAL CHARACTERISTICS continued

Characteristic

Symbol

Min

Typ

Gpe

7.0

8.0

6.5

Max

Unit

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

(VCe = 25 V. IC = 1.8 A. Pout = 10 W, f =

Common-Emitter Amplifier Power Gain

GpE

(VCE = 25 V, lC = 1.8 A. Pout = 10 W, f =

1400 MHz)

Load Mismatch

<t>

(Vce = 25 V, lE = 1.8 A, Pout = 10 W, f =

Load VSWR = x:1. All Phase Angles)

1300 MHz)

No Degradation in
Output Power

1300 MHz

Input Overdrive

6.0

(Vce = 25 Vdc. Ic = 1.8 A, f = 1300 MHz)

S11

vce
(Volts)

'C
(Amperes)

1.8

S21
t<t>

S22

Sl2
t<t>

td,

/ <fr

(deg.)

fell

0.97

178

0.55

0.01

0.97

177

0.39

0.01

700

0.96

177

0.46

0.01

0.84

-177

800

0.94

176

0.44

0.01

0.84

-177

900

0.93

175

0.44

0.01

-3

0.84

-176

1000

0.90

175

0.45

0.01

-19

0.86

-175

1100

0.87

176

0.46

-18

0.01

-36

0.89

-175

1200

0.86

178

0.44

-41

0.01

-64

0.92

-176

1300

0.88

-180

0.37

0.01

-91

0.95

-178

0.95
0.94

-180

MHz

ISnl

500
600

(deg.)

IS12I

(deg.)
8

1400

0.92

-179

0.28

-90

0.01

-128

1500

0.94

-179

0.20

-108

0.01

-169

Figure 1. Common-Emitter S-Parameters

'C =

1.8 A

vce

= 25 V

12 V
1

P[N. INPUT POWER (Wl

Figure2. Output Power versus Input Power

MOTOROLA RF DEVICE DATA

2-291

I822I

(deg.)

0.83

-177

0.83

-177

178

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRA1417
Series

The RF Line

Microwave Power Transistors

7 to 8 dB
1.4-1.7 GHz
2 TO 25 WATTS
BROADBAND
MICROWAVE POWER

... designed primarily for wideband, large-signal output and driver amplifier stages in
the 1.4 to 1.7 GHz frequency range.
Designed for Class C, Common Base Power Amplifiers
Specified 28 Volt, 1.7 GHz Characteristics:
Output Power 2 to 25 Watts

TRANSISTORS

Power Gain 7 to 8 dB Min

Collector Efficiency 40 to 45% Min

Built-in Matching Network for Broadband Operation
Gold Metallization for Improved Reliability

Diffused Ballast Resistors

CASE 394-01, STYLE 1

(MRA .25)
MAXIMUM RATINGS

Symbol

Rating

-11

-6

25A

Unit

Collector-Base Voltage

VcES

Vdc

Emitter-Base Voltage

vebo

3.5

Vdc

0.5

Adc

Collector Current Continuous

Operating Junction Temperature

200

Tstg

-65 to +150

Storage Temperature Range

THERMAL CHARACTERISTICS

Symbol

Characteristic

Thermal Resistance, RF, Junction to Case

Rfljc

Max
15

Unit
2.5

CAV

Max

Unit

4.5

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

dC
dc
dC
dC

=
=
=
=

20 mA, Vbe = 0)
40 mA, Vbe = o)
80 mA VBE = 0)
160 mA, Vbe = o)

Eminer-Base Breakdown Voltage

(IE
(IE
(IE
(IE

=
=
=
=

0.25 mA, Ic = 0)
0.5 mA, Ic = 0)
1 mA, Ic = 0)
2 mA, lC = 0)

Vdc

V(BR)CES
MRA1417-2
-6
-11
*25A

50
50

50
Vdc

V(BR)EBO
MRA1417-2
-6
-11
-25A

Collector Cutoff Current

MRA1417-2

(Vcb = 28 V, lE = 0)

-6

3.5

3.5
3.5

3.5
0.5

ICBO

-11

25A

mAdc

2
4

(continued)

MOTOROLA RF DEVICE DATA

2-292

MRA1417 Series

ELECTRICAL CHARACTERISTICS continued

Symbol

Characteristic

Min

Typ

Max

Unit

ON CHARACTERISTICS
DC Current Gain

(lC =
(lC =
(lC =
dc =

hFE

0.1 A, VCE =
0.2 A, Vce =
0.4 A, VCE =
0.8 A, Vce =

5 V)
5 V)
5 V)
5 V)

MRA1417-2

-6

-11

-25A

100
100

DYNAMIC CHARACTERISTICS

Output Capacitance

MRA1417-2

(VCB = 28 V, l = 0, f = 1 MHz)

Cob

-6
-11

-25A

4.5

(1)

FUNCTIONAL TESTS

Common-Base Amplifier Power Gain

(VCE =
(VCE =
WCE =
(Vce =

28 V, Pout
28 V, Pout
28 V, Pout
28 V, Pout

=
=
=
=

GPB

2 W, f = 1.4 & 1.7 GHz)

6 W, f = 1.4 & 1.7 GHz)
11 W, f = 1.4 & 1.7 GHz)
25 W, f = 1.4 & 1.7 GHz)

MRA1417-2
-6
-11
-25A

7.4
7.4
7

Collector Efficiency

(Vce = 28 V, Pout = 2 W, f = 1.4 & 1.7 GHz)

MRA1417-2

(VCe = 28 V, Pout = 6 W, f = 1.4 & 1.7 GHz)

(VCe = 28 V, Pout = 11 W, f = 1.4 & 1.7 GHz)
(Vce = 28 V, Pout = 25 W, f = 1.4 & 1.7 GHz)

-6
-11
-25A

45
45

(1) Not measurable because of output matching network.

TYPICAL CHARACTERISTICS

MRA1417-2 2 WATTS BROADBAND

Pin = 0.4W
40

Pin = 0.3W

1
>

|
2
3

Pin = 0.2W

Pin = 0.15W_

Q? "

Figure 3. Series Equivalent Input/Output Impedance

VCC = 28 V

Ot
M0

145

lit

1 Si

160

I 70

(.FREQUENCY(GHz)

Rgure 1. Power Output versus Frequency

^Pi -o 3W

><_>

z
o

140

14i

I JO

I Si

164

(.FREQUENCY (GHz)

Rgure 2. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-293

MRA1417 Series
TYPICAL CHARACTERISTICS

MRA1417-6 6 WATTS BROADBAND

140

IPin

14S

ISO

ISS

= 0.9W

ItS

170

f, FREQUENCY (GHz)
140

145

I SO

ISS

165

I '0

Rgure S. Efficiency versus Frequency

f, FREQUENCY (GHz)

Rgure 4. Power Output versus Frequency

Figure 6. Series Equivalent Input/Output Impedance

VCC = 28 V

too

TYPICAL CHARACTERISTICS
MRA1417-11 11 WATTS BROADBAND

too

400

~>s

= 2 (V

-Pin = 1.6W^
f^ too

--jn_

jg so

, = 1W^,

^n = 0.8Wr>

s ,0

Pin = 1.6'

S^n = 0 63 W
M

140

145

1 SO

I SS

160

165

I JO

f, FREQUENCY (GHz)
10

14S

ISO

ISS

160

l(S

Figure 8. Efficiency versus Frequency

f, FREQUENCY (GHz)

Rgure 9. Series Equivalent Input/Output Impedance

Vce = 28 V

Rgure 7. Power Output versus Frequency

TYPICAL CHARACTERISTICS

MRA1417-25A 25 WATTS BROADBAND

\ l1n- 4.4 W
5

145

I SO

I 55

165

I 70

f. FREQUENCY (GHz)

'".'a litrbTsTrbr6T-T?o

Rgure 11. Efficiencyversus Frequency

(.FREQUENCY (GHz)

Rgure 12. Series Equivalent Input/Output Impedance

Vce = 28 V

Rgure 10. Power Output versus Frequency

MOTOROLA RF DEVICE DATA

2-294

MRA1417 Series

The graph shown below displays MTTF in hours x ampere2

emitter current for each of the devices. Life tests at elevated

temperatures have correlated to better than 10% to the theo

retical prediction for metal failure. Sample MTTF calcalations

based on operating conditions are included below.

110

130

ISO

170

190

Tj, JUNCTION TEMPERATURE ("CI

Example of MTTF for MRA1417-11 Condition*

P0 - 11W
Pin -2W
VCC - 28 V
il - 45%

TFLANGE - WC

ic x Vce

PDISS - Pin + VCC- lC " Po " 15.44 W

Tjunc - TFLANGE JF * PDISS - 139.4'C

.-,r

0-36 x 106 Hrs. Amp2

MTTF -

53.9 Yrs

MTTF =

lC2

- 472,360 Hrs

Board mtltritl: 18 mi (Wtctrie Oktma ttfbn fiberojtu.

'Gravidthrcugh to btckuMgrand [tat.
|1|8|pt3i lOOpF dip capicitar.
I2IVCC bnwttd by 0l(rf d>P nl S><F ctetrotrtic

Figure 13. MTTF Factor

Figure 14. Test Circuit Boards

(Normalized to 1 Ampere3 Continuous Duty)

(Not to Scale)

MOTOROLA RF DEVICE DATA

2-295

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRA1417H
Series

The RF Line

Microwave Power Transistors

... designed primarily for wideband, large-signal output and driver amplifier stages in

7.4 to 8 dB
1.4-1.7 GHz
2 TO 11 WATTS
BROADBAND
MICROWAVE POWER
TRANSISTORS

the 1.4 to 1.7 GHz frequency range.

Designed for Class C, Common Base Power Amplifiers
Specified 28 Volt, 1.7 GHz Characteristics:
Output Power 2 to 11 Watts
Power Gain 7.4 to 8 dB, Min

Collector Efficiency 40 to 45% Min

Built-in Matching Network for Broadband Operation
Gold Metallization for Improved Reliability

Diffused Ballast Resistors

Hermetic Package for Military/Space Applications

CASE 393-01, STYLE 1

(HLP-11)

MAXIMUM RATINGS

Symbol

Rating

Collector-Base Voltage
Emitter-Base Voltage

-2H

-6H

VcES

VebO

3.5
1

0.5

-11H

Unit
Vdc
Vdc
Adc

Collector Current Continuous

Operating Junction Temperature

200

Tstg

-65 to +200

Storage Temperature Range

THERMAL CHARACTERISTICS

Symbol

Characteristic

Thermal Resistance, RF, Junction to Case

Unit

Max

Rwc

Symbol

Min

C/W

4.5

ELECTRICAL CHARACTERISTICS
Characteristic

] Typ

Max

Unit

OFF CHARACTERISTICS

(lC = 20 mA, VBe = o>

(lC = 40 mA, VBE = 0)

(lC = 80 mA, Vbe = 0)

50
50

MRA1417- 2H
- 6H

-11H

Vdc

V(BR)EBO

Emitter-Base Breakdown Voltage

(lE = 0.25 mA, Ic = 0)

(IE = 0.5 mA, Ic = 0)
(Ic. = 1 mA, Ic = 0)

Vdc

V(BR)CES

Collector-Emitter Breakdown Voltage

3.5
3.5
3.5

MRA1417- 2H
- 6H
-11H

0.5

Collector Cutoff Current

MRA1417- 2H

(VCb = 28 V, lE = 0)

- 6H

-11H

CBO

mAdc

ON CHARACTERISTICS
DC Current Gain

(lC = 100 mA. Vce = 5 v)

dC = 200 mA. VCe = 5 V)
dC = 400 mA, Vce = 5V)

"FE
MRA1417- 2H
- 6H
-11H

10
10

100
100
100

(continued)

MOTOROLA RF DEVICE DATA

2-296

MRA1417H Series
ELECTRICAL CHARACTERISTICS continued

= Characteristic

Symbol

Typ

Min

Max

Unit

DYNAMIC CHARACTERISTICS

I Output Capacitance

MRA1417- 2H

IVcb =28 V, lE =0, f = 1MHz)

4.5

Cob

- 6H

-11H

FUNCTIONAL TESTS

Common-Base Amplifier Power Gain

Gpb

(VCE = 28 V, Pout = 2 W, f = 1.4 & 1.7 GHz)

(VCE = 28 V, Pout = 6 W, ( = 1.4 8t 1.7 GHz)

MRA1417- 2H
- 6H

(VCE = 28V, Pout =! 11 W, f = 1.4& 1.7GHz)

" .:'

8 .
7.4

-11H

7.4

Collector Efficiency

(VCE = 28 V, Pout = 2W, f = 1.4 & 1.7 GHz)

(Vce = 28 V, P0ut = 6W,f = 1.4 & 1.7 GHz)
(VCE = 28 V, Pout = 11 W, f = 1.4 & 1.7 GHz)

MRA1417- 2H

- 6H

-11H

45'

TYPICAL CHARACTERISTICS

The graph shown below displays MTTF in hours x ampere2

emitter current for each of the devices. Life tests at elevated

temperatures have correlated to better than * 10% to the theo

retical prediction for metal failure. Sample MTTF calculations

based on operating conditions are included below.

i\
10 =

-\
Examplo of MTTF for MHA1417-11H Condition

P0 = 11 W

0.1

Pin -2W
VCc - 28 V
17 = 45% - " "

TFLANGE - 70"C

1e x VCC

PDISS Pin + VCC. lC - Po = 16-44W

TJUNC TFLANGE + JF* PDISS " 139.4'C

..,
MTTF

0.36 x1Q6 Hrs. Amp2 ._,,1J

j-Tj
- 472.3S0 H

MTTF = 53.9 Yrs

0.001

110

130

ISO

170

190

Tj, JUNCTION TEMPERATURE (C|

Figure 1. MTTF Factor

(Normalized to 1 Ampere2Continuous Duty)

MOTOROLA RF DEVICE DATA

2-297

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRA1600
Series

The RF Line

Microwave Power Transistors

... designed primarily for large-signal output and driver amplifier stages for mobile sat
ellite up links.

7.0 to 8.4 dB
1600-1660 MHz

Designed for Class C, Common Base Power Amplifiers

Specified 28 Volt, 1640 MHz Characteristics:
Output Power 2.0 to 30 Watts

2.0 to 30 WATTS
NARROWBAND
MICROWAVE POWER
TRANSISTORS

Power Gain 7.0 to 8.4 dB Min

Collector Efficiency 39% to 45% Min

Internally Compensated

Gold Metallization for Improved Reliability

Diffused Ballast Resistors

CASE 394-01

(MRA .25)

MAXIMUM RATINGS

Symbol

Rating

-2

-13

Unit

Collector-Base Voltage

VCES

Vdc

Emitter-Base Voltage

VEBO

3.5

Vdc

Collector Current Continuous

Operating Junction Temperature

Storage Temperature Range

0.5

4.0

8.0

Adc

200

Tstg

-65 to +150

|
I
J

THERMAL CHARACTERISTICS

RflJC

4.5

2.5

Unit
CAV

Symbol

Min

Typ

Max

Unft

Symbol

Characteristic

Thermal Resistance, RF, Junction to Case (Rated Pout'

Max

ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC = 20 mA, VbE = 0)

dC * 80 mA, VbE = 0)
(lC = 160 mA, VbE = 0)

Collector Cutoff Current

50
50
Vdc

V(BR)EBO

Emitter-Base Breakdown Voltage

(lE = 0.25 mA. Ic = 0)

(lE = 1.0 mA, Ic = 0)
(IE = 2.0 mA, Ic = 0)

Vdc

V(BR)CES

MRA1600-2
-13
-30
MRA1600-2
-13
-30
MRA1600-2

(VCB = 28 V, lE = 0)

3.5

'CBO

mAdc

0.5

-13

2.0

-30

4.0

(continued!

MOTOROLA RF DEVICE DATA

2-2S8

MR A1600 Series

ELECTRICAL CHARACTERISTICS continued

Symbol

Characteristic

Unit

Typ

Min

ON CHARACTERISTICS

I DC CurrentGain

"FE

(lC = 0.1 A, VcE = 5.0 V)

(lC = 0.4 A, VCE = 5.0 V)

MRA1600-2

dc = 0.8 A, VCE = 5.0 V)

-13

-30

100
100

100

DYNAMIC CHARACTERISTICS

Output Capacitance

MRA1600-2

(VCb = 28 V, lE = 0, f = 1.0 MHz)

4.5

Cob

-13

-30

(1)

FUNCTIONAL TESTS

Common-Base Amplifier Power Gain

GpB

<VCE = 28 V, Pout = 2.2 W, f = 1.60 and 1.64 GHz) MRA1600-2

(VCE = 28 V, Pout = 12.7 W, f = 1.60 and 1.64 GHz)
-13
(VCE = 28 V, Pout = 30 W, f = 1.60 and 1.64 GHz)
-30

dB
8.4

7.6

7.0

Collector Efficiency

<VCE = 28 V, Pout = 2.2 W, f = 1.60 and 1.64 GHz) MRA1600-2

<VCE = 28 V, Pout = 12.7 W, f = 1.60 and 1.64 GHz)
-13
(VCE = 28 V, Pout = 30 W, f = 1.60 and 1.64 GHz)
-30

(1) Not measurable because of shunt inductor bypass.

TYPICAL CHARACTERISTICS
MRA1600-2
^^

P|N = 0.7V

P|N = ( hVtfA

P|N = <.4W_

*"""

2 50
o

P,N = 0.3W

# 30

1.6

1.65

1.6

(.FREQUENCY (GHz)

1.65

I, FREQUENCY (GHz)

Figure 1. Output Power versus Frequency

Rgure 2. Efficiency versus Frequency

f
GHz

"IN

JX|N

R0<2>

JX0<2

1.500

17.662

10.579

8.813

-17.216

1.525

17.146

10.661

8.001

- 17.786

1.550

16.608

10.328

7.240

-18.350
- 19.386

1.575

16.087

9.986

6.728

1.600

15.596

9.635

6.408

1.625

15.149

9.273

6.164

- 20.950

1.650

14.643

8.913

5.793

-21.495

1.675

14.214

8.541

5.416

- 22.565

13.823

8.581

5.027

-23.122

1.700

- 20.420

Figure 3. Input/Output Impedances (P0 = 2.2 W, Vqe = 28 V)

(2) Zol' - R0 * JX0 is ,noconjugate of theoptimum load impedance into which thedevice output operates at a given output power, voltage and
frequency.

MOTOROLA RF DEVICE DATA

2-299

MRA1600 Series

TYPICAL CHARACTERISTICS
MRA1600-13

Po =

70
z

~P|N = 3W
I5

13 W

"2.5W
-2W

jjj 60

1.55

1.6

1.65

1.55

f, FREQUENCY (GHz)

1.6

1.65

(.FREQUENCY (GHz)

Rgure 5. Efficiency versus Frequency

Rgure 4. Output Power versus Frequency

JX0<1>

GHz

R|N

JX|N

R0<1

1.500

6.840

10.887

4.293

-4.342

1.525

6.581

10.452

4.175

-3.308

1.550

6.333

10.465

3.877

-3.475

1.575

6.119

10.026

3.497

- 3.479

1.600

5.904

9.588

3.087

-3.047

1.625

9.150

2.707

-3.049

1.650

5.699
5.482

8.714

2.320

-3.489

1.675

5.259

8.277

2.004

-3.491

1.700

5.121

7.838

1.732

-3.492

Rgure 6. Input/Output Impedances (P0 = 12.7 W, Vqe = 28 V)

"> Zol'

Rq + JXo is the conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and

frequency.

MRA1600-30

Po =

=**1N 3W

I7Wj

5.5W

56
-^

15 W

30W

*4.5W

-4W

<e io

1.55

1.6

165

f. FREQUENCY (GHzl

(.FREQUENCY (GHz)

Rgure 8. Efficiency versus Frequency

Figure 7. Output Power versus Frequency

MOTOROLA RF DEVICE DATA

2-300

MRA1600 Series

TYPICAL CHARACTERISTICS
MRA1600-30
f

JX0<->

GHz

"IN

JX|N

R01>

1.500

6.169

4.308

6.310

2.579

1.525

6.012

4.312

5.782

2.514

1.550

5.815

3.882

1.575

5.659

3.452

4.835

1.297

1.600

5.447

3.022

4.425

0.866

1.625

5.353

3.023

4.107

0.433

1.650

5.194

2.592

3.746

-0.434

1.675

5.029

2.161

3.475

-0.869

1.700

4.912

1.729

3.247

-1.304

5.228

1.727

Rgure 9. Input/Output Impedances (PQ - 30 W, Vce - 28 v'

(1) Zol* = R0 + JX0 'S the conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and
frequency.

(2)

.100 pF CHIP CAP

100pF

(1) Bypass 100 pF Chip Cap

(21 Vce Bypassed by 0.1 pF Chip Cap and 5 pF Electrolytic

'Ground thru to back side GND Plane
Board Material: 18 Mil Dielectric thickness

Teflon Fiberglass

Figure 10. Test Circuit Boards for MRA1600 Series

(not to scale)

MOTOROLA RF DEVICE DATA

2-301

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MR A1720
Series

The RF Line

Microwave Power Transistors

... designed primarily for wideband, large-signal output and driver amplifier stages in
the 1.7 to 2 GHz frequency range.

6 to 7.5 dB
1.7-2 GHz
2 TO 20 WATTS
BROADBAND

Designed for Class C, Common Base Power Amplifiers

Specified 28 Volt, 2 GHz Characteristics:
Output Power 2 to 20 Watts

MICROWAVE POWER
TRANSISTORS

Power Gain 6 to 7.5 dB Min

Collector Efficiency 35 to 40% Min

Built-in Matching Network for Broadband Operation
Gold Metallization for Improved Reliability

Diffused Ballast Resistors

CASE 394-01. STYLE 1

(MRA .25)

MAXIMUM RATINGS

Symbol

Rating

-2 | -5

-9

-20

UnH

Collector-Base Voltage

VcES

Vdc

Emitter-Base Voltage

vebo

3.5

Vdc

0.5

4 | 8

Adc

Collector Current Continuous

Operating Junction Temperature

200

Tstg

-65 to +150

Storage Temperature Range

THERMAL CHARACTERISTICS

Symbol

Characteristic

Thermal Resistance. RF, Junction to Case

RflJC

Unit

Max
15

4.5

2.5

c/w

ELECTRICAL CHARACTERISTICS
Symbol

Characteristic

Min

Typ

Max

UnH

OFF CHARACTERISTICS

(IC =
(lC =
(lC =
(lC =

20 mA, Vbe = 0)
40 mA, Vbe = 0)
80 mA, Vbe = )
160 mA, VBe = >

MRA1720-2

-5

-9

0.25 mA, Ic = 0)
0.5 mA, Ic = 0)
1 mA, lC = 0)
2 mA, Ic = 0)

-20

Vdc

V(BR)EBO

Emitter-Base Breakdown Voltage

(l =
(lE =
(lE =
(IE =

Vdc

V(BR)CES

Collector-Emitter Breakdown Voltage

MRA1720-2

3.5

-5

3.5

-9

3.5

-20

3.5

Collector Cutoff Current

MRA1720-2

(VCB = 28 V, lE = 0)

-5

>CBO

-20

MOTOROLA RF DEVICE DATA

2-302

0.5

mAdc

MRA1720 Series

ELECTRICAL CHARACTERISTICS continued

Symbol

Characteristic

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

dc
dc
(lC
(lC

=
=
=
=

0.1 A, VCe
0.2 A, VCe
0.4 A, VcE
0.8 A, VCe

hFE

=
=
=
=

5 V)
5 V)
5 V)
5 V)

MRA1720-2

-5

100

-9

100

-20

100

DYNAMIC CHARACTERISTICS

Output Capacitance

MRA1720-2

(Vcb = 28 V, lE = 0, f = 1 MHz)

4.5

Cob

-5

-9

-20

(1)

FUNCTIONAL TESTS

Common-Base Amplifier Power Gain

(VCe = 28 V, Pout = 20 W, f = 1.7 & 2.0 GHz)

MRA1720-2
-5
-9

=
=
=
=

28 V,
28 V,
28 V,
28 V,

Pout
Pout
P0ut
Pout

7.5

6.5
6
%

=
=
=
=

2 W, f = 1.7 & 2.0 GHz)

5 W, f = 1.7 & 2.0 GHz)
9 W, f = 1.7 & 2.0 GHz)
20 W, f = 1.7 & 2.0 GHz)

MRA1720-2
-5
-9
-20

(1) Not measureable because of shunt inductor bypass.

6.5

-20

Collector Efficiency

(VCE
(Vce
(VCE
(VCe

GPB

(Vce = 28 V, Pout = 2 W, f = 1.7 & 2.0 GHz)

(VcE = 28 V, Pout = 5 W, f = 1.7 & 2.0 GHz)
(Vce = 28 V, Pout = 9 W. f = 1.7 & 2.0 GHz)

MOTOROLA RF DEVICE DATA

2-303

40
40

MRA1720 Series

TYPICAL CHARACTERISTICS

MRA1720-2 2 WATTS BROADBAND

Pin = 0.45W

Pin = 0.25W

_Pin =tt17 W

1H 0.8'

0.6

0.4

Rgure 2. Series Equivalent Input/Output Impedance

VCc = 28 V
1.7

1.75

1.8

1.85

1.9

1.95

f. FREQUENCY IGHd

Figure 1. Power Output versus Frequency

z
uj

1.7

1.75

1.8

1.85

1.9

1.95

f. FREQUENCY (GHil

Rgure 3. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-304

MRA1720 Series

TYPICAL CHARACTERISTICS

MRA1720-5 5 WATTS BROADBAND

Pin - 1-1 W
6

Pjn = 0.75W

Pjn =0;6W^,

Pin - 0-5W
Pin = 0.4W

jg 0.8

0.6
O

0.4

0.2

Rgure 5. Series Equivalent Input/Output Impedance

VCC = 28 V
0.1

1.7

1.75

1.8

1.85

1.9

1.95

f, FREQUENCY (GHz)

Rgure 4. Power Output versus Frequency

\Pin = 1.1 w

1.7

1.75

1.8

1.85

1.9

1.95

(.FREQUENCY (GHz)

Rgure 6. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-305

MRA1720 Series

TYPICAL CHARACTERISTICS
MRA1720-9 9 WATTS BROADBAND

Pin =

Pin = 1.5W
-

Pin = 1.25 W
5

1
Pin = 1W

Pin =

0.6 W

Il!L=
1.7

1.75

aa w

Rgure 8. Series Equivalent Input/Output Impedance

Vce = 28 V

1.8

1.85

1.9

1.95

f. FREQUENCY (GHz)

Rgure 7. Power Output versus Frequency

| 46
Pin = 2 W

1.7

1.75

1.8

1.85

1.9

1.95

f. FREQUENCY (GHil

Rgure 9. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-306

MRA1720 Series

TYPICAL CHARACTERISTICS

MRA1720-20 20 WATTS BROADBAND

100

Pin = 5W

Pin = 4W
Pin-3W_
cc

^"1

Pin" 2-5W

= 2W

Rgure 11. Series Equivalent Input/Output Impedance

Vce = 28 V
1.7

1.75

1.8

1.85

1.95

f, FREQUENCY (GHz)

Rgure 10. Power Output versus Frequency

Pin = !>W

1.7

1.75

1.8

1.85

1.9

1.95

f, FREQUENCY (GHz)

Rgure 12. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-307

MRA1720 Series

The graph shown below displays MTTF in hours x ampere2

emitter current for each of the devices. Life tests at elevated

temperatures have correlated to better than + 10% to the theo

retical prediction for metal failure. Sample MTTF calculations

based on operating conditions are included below.
100

lllf^
Ml

\4%

ILa, i~.-i

lOOpf

Ce*wcCh

Vv
^~

0.01

110

130

150

170

190

210

Tj,JUNCTION TEMPERATURE (C)

Example of MTTF for MRA1720-9 Conditions
P0 = 9W
Pin =2W
VCC " 28 V
ij = 40%
TFLANGE = 7CTC

FM rap or pine moid u gnidd (dn

|l) Bypasscapacitortogro*d (1OOpf wranw cho)

|2) um Vce bypassot tOOpf en*. 0 l>rfcho antfVf
Boardmaterial0 020 menglass teflon. 2 55

100 x P.

- = 0.803 A
ic x Vce
PDISS = Pin + VCC-"C " Po = 15.48W

lC " 'C =

Rgure 14. Test Circuit Boards (Not to Scale)

TJUNC = TpLANGE + JF x 15.48 = 139.6C

0.4 x 1Q6Hrs. Amp2
MTTF

"Cz

= 620.338 Hrs

MTTF = 70.8 Yrs

Rgure 13. MTTF Factor versus Junction Temperature

MOTOROLA RF DEVICE DATA

2-308

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRAL1417
Series

The RF Line

Microwave Power Transistors

7 to 8 dB
1.4-1.7 GHz
2 TO 25 WATTS
BROADBAND
MICROWAVE POWER
TRANSISTORS

... designed primarily for wideband, large-signal output and driver amplifier stages
the 1.4 to 1.7 GHz frequency range.
Designed for Class C, Common Base Power Amplifiers
Specified 22 Volt, 1.7 GHz Characteristics:
Output Power 2 to 25 Watts
Power Gain 7 to 8 dB Min

Collector Efficiency 40 to 45%

Built-in Matching Network for Broadband Operation
Gold Metallization for Improved Reliability

Diffused Ballast Resistors

CASE 394-01. STYLE 1

(MRA .25)

MAXIMUM RATINGS

Symbol

Rating
Collector-Base Voltage

Emitter-Base Voltage

-2

-6

-11

-25

Unit

VCES

Vdc

VebO

3.5

Vdc

0.5

Adc

Collector Current Continuous

Operating Junction Temperature

200

Tstg

-65 to +150

Storage Temperature Range

THERMAL CHARACTERISTICS

Symbol

Characteristic

| Thermal Resistance, RF, Junctionto Case

Rfljc

Unit

Max
15

4.5

2.5

C/W

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Eminer Breakdown Voltage

dC = 20 mA, Vbe = 0)
dC = 40 mA, Vbe = 0)

(lC = 80 mA, Vbe = 0)

(lC = 160 mA, VBe = 0)
Emitter-Base Breakdown Voltage
E = 0.25 mA, Ic = 0)
(Ig = 0.5 mA, Ic = 0)
(lE = 1 mA, Ic = 0)
E = 2 mA, Ic = 0)

Vdc

V(BR)CES
MRAL1417-2
-6
"11

42
42

-25

Vdc

vIBR)EBO
MRAL1417-2
-6

3.5
3.5

-11

3.5

-25

3.5

Collector Cutoff Current

MRAL1417-2

(VCb = 22 V, lE = 0)

-6
-11

MOTOROLA RF DEVICE DATA

0.5

'CBO

-25

2-309

1
2
4

mAdc

MRAL1417 Series

ELECTRICAL CHARACTERISTICS continued

Symbol | Min

Characteristic

Typ

Max

UnH

ON CHARACTERISTICS
DC Current Gain

C
dc
dC
C

=
=
=
=

0.1 A, Vce
0.2 A. Vce
0.4 A, VCE
0.8 A, Vce

=
=
=
=

hFE

5 v)
5 V)
5 V)
5 V)

MRAL1417-2

-6

-11

-25

100
100
100

100

FUNCTIONAL TESTS

Common-Base Amplifier Power Gain

(Vce
(VCE
(VCe
(Vce

=
=
=
=

22 V, Pout
22 V. Pout
22 V. Pout
22 V, Pout

=
=
=
=

2 W, f = 1.4 & 1.7 GHz)

6 W, f = 1.4 & 1.7 GHz)
11 W, f = 1.4 & 1.7 GHz)
25 W, f = 1.4 & 1.7 GHz)

GPB
8

-6

7.4

-11

7.4

-25

Collector Efficiency

(VCE =
(Vce =
(Vce =
(VCe =

MRAL1417-2

22 V, Pout
22 V, Pout
22 V, Pout
22 V, Pout

=
=
=
=

2 W, f = 1.4 & 1.7 GHz)

6 W, f = 1.4 & 1.7 GHz)
11 W, f = 1.4 & 1.7 GHz)
25 W, f = 1.4 & 1.7 GHz)

MRAL1417-2

-6

-11

-25

TYPICAL CHARACTERISTICS

MRA114I7-2 Device Impsdtnce

MHAL1417-11 Device Irapedasee

ZOUTIQI

Freq.
1.4GHJ
1.456HI
1.5GHz
1.55GHz
1.6GHz
I.65GHI
1.7GHt

R
6.17

ZatQ)

ZoSTtQI

-18.8
-19.0
-19.1
-18.9
-18.8
-18.7
-18.8

19.2
18.3
17.4

12.7
12.4

16.6
15.9
15.2
14.5

8.18
B.27
7.86
7.25
6.55
5.89
5.23

-9.16
-8.05
-7.23
-8.72
-6.54
-6.53
-6.78

13.6
13.9
14.2

11.2

6.67
7.08
7.25
7.14
&71
aoo

Freq.
1.4GHz

1.456Hz
1.5GHz
1.55GHz
1.6GHz
1.65GHz

12.1
11.9
11.6
11.3
11.1

MRAL1417-6 Device (mpedtnee

1.46H2
1.45GHJ
1.56KI
1.55GHz
1.66Hz
1.6SGH]
I.7GHJ

3.40
4.28
5.17

-4.15
-3.80
-3.32
-2.09
-1.00
-0.56
-0.66

5.46
5.09
4.76
4.45
4.22
138
3.80

6.74
6.45
6.14
5.71
5.41
5.09
4.77

3.80

7.76
7.33

&47
5.80
5.16

4.73
3.71
2.77

i*
US
1.1
10.4

9.78
9.17
&63
aoa

MRAL1417 25 Deviee ImpetJance

ZasrJQ)

Frtq.

-5.42

1.7GHz

ZMiQI

ZjiIQ)

14.6
15.2
15.9
16.8

ZourlQ)

Freq.
1.4GHz
1.45GHz
1.5GHz
1.55GHz
1.6GHz
1.65GHz
1.7GHz

t0.4

9.77

9.23
8.75
8.49
8.42

ZuB)

3.61
3.41
3.16
2.80
2.61
2.34

6.70
6.62
6.34
6.09
5.88

4.56
3.98
144
2.95

Figure 1. Z|n and Zqut versus Frequency

MOTOROLA RF DEVICE DATA

2-310

**'

MRAL1417 Series

MRAL1417-11

BojnJ rmltral: 18 ml lidKtricthxkms ttfbn fibcrgtm.

'Grand thraogh ta haciiniggrand pUcc
(llBrpKi IDOpF chipctptdta.

I2IVCC bvpntcdby 0.V chip md 5(iF chclrat/iic.

Figure 2. Test Circuit Boards (Not to Scale)

MOTOROLA RF DEVICE DATA

2-311

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

The RF Line

Microwave Power Transistors

6 to 7.5 dB
1.7-2 GHz

... designed primarily for wideband, large-signal output and driver amplifier stages in

2 TO 20 WATTS
BROADBAND
MICROWAVE POWER
TRANSISTORS

the 1.7 to 2 GHz frequency range.

Designed for Class C, Common Base Power Amplifiers
Specified 22 Volt, 2 GHz Characteristics:
Output Power 2 to 20 Watts
Power Gain 6 to 7.5 dB, Min

Collector Efficiency 35 to 40%, Min

Built-in Matching Network for Broadband Operation

Gold Metallization for Improved Reliability

Diffused Ballast Resistors

CASE 394-01, STYLE 1

(MRA .25)

MAXIMUM RATINGS

Symbol

Rating
Collector-Base Voltage
Emitter-Base Voltage

-2

-5

-9

UnH

Vces

Vdc

VebO

3.5

Vdc

Collector Current Continuous

Operating Junction Temperature

200

Tstg

-65 to +150

Storage Temperature Range

0.5

Adc

THERMAL CHARACTERISTICS

Symbol

Characteristic

Thermal Resistance, RF, Junction to Case

Rfljc

Max
15

Unit

2.5 | C/W

4.5

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC
(lC
(lC
dC

=
=
=
=

20 mA, Vbe = 0)
40 mA, VBe = 0)
80 mA, VBe = 0)
160 mA, Vbe = 0)

Eminer-Base Breakdown Voltage

(l =
(l =
dE =
(IE =

0.25 mA, Ic = 0)
0.5 mA, Ic = 0)
1 mA, Ic = 0)
2 mA, Ic = 0)

Vdc

V(BR)CES
MRAL1720-2
"5
-9
-20

42
42

42
Vdc

V(BR)EBO
MRAL1720-2
-5
-9
-20

Collector Cutoff Current

MRAL1720-2

(Vcb = 22 V, lE = 0)

-5

3.5
3.5

3.5
0.5

ICBO

-9
-20

MOTOROLA RF DEVICE DATA

2-312

3.5

1
-

2
4

mAdc

MRAL1720 Series
ELECTRICAL CHARACTERISTICS continued

Symbol

Characteristic

Max

Typ

Min

Unit

ON CHARACTERISTICS
DC Current Gain

(lC
(lC
dC
dC

= 0.1
= 0.2
= 0.4
= 0.8

"FE

A, Vce
A, VcE
A, VcE
A, VCE

=
=
=
=

5 V)
5 V)
5 V)
6 V)

100

MRAL1720-2

-5

100

-9

100

-20

100

DYNAMIC CHARACTERISTICS

Output Capacitance

MRAL1720-2

(Vcb = 28 V, lE = 0, f = 1 MHz)

Cob

-5

-9

-20

4.5

8
12

(1)

FUNCTIONAL TESTS

Common-Base Amplifier Power Gain

(Vce =
(Vce =
(VCE =
(Vce =

22 V, Pout
22 V. Pout
22 V, Pout
22 V, Pout

2 W, f = 1.7 & 2.0 GHz)

5 W, f = 1.7 & 2.0 GHz)
9 W, f = 1.7 & 2.0 GHz)
20 W, f = 1.7 & 2.0 GHz)

MRAL1720-2
-5
-9
-20

=
=
=
=

2 W, f = 1.7 & 2.0 GHz)

5 W, f = 1.7 & 2.0 GHz)
9 W, f = 1.7 & 2.0 GHz)
20 W, f = 1.7 & 2.0 GHz)

MRAL1720-2
-5
-9
-20

7.5

=
=
=
=

22 V, Pout
22 V, Pout
22 V, Pout
22 V, Pout

6.5

Collector Efficiency

(Vce
(Vce
(VCe
(VCE

GPB

=
=
=
=

45
40

(1) Not measurable because of output matching network.

TYPICAL CHARACTERISTICS
MR A L1720-2

Pin =

0.45 W
-

Pin = 0.35W

Pin =ojy
Figure 2. Series Equivalent Input/Output Impedance

Pin = 025W

VCC = 22 V

0J8

^_
S

0.6

Pin =

0.2 W

0.4

"t 48

Pin =
1.7

1.75

1.8

1.85

1.9

0.35 W

1.95
1.8

f, FREQUENCY (GHz)

1.9

I. FREQUENCY (GHz)

Figure 1. Power Output versus Frequency

Figure 3. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-313

MRAL1720 Series

TYPICAL CHARACTERISTICS

MRAL1720-5

10
_

Pin-

1?YY

|
Pin = 0.8W

Pin = 0.6W

Pin = 0.5W
2

Rgure 5. Series Equivalent Input/Output Impedance

Pin =

Vce = 22 V

0.4 W

| 0.8
S
= 0.6

0.4

0.2

Pin =

0.1

1.8

1.1 W

1.8-1.9

1.9

f, FREQUENCY (GHz)

Rgure 6. Efficiency versus Frequency

Rgure 4. Power Output versus Frequency

MOTOROLA RF DEVICE DATA

2-314

MRAL1720 Series

TYPICAL CHARACTERISTICS

MRAL1720-9

Pin:=

Rgure 8. Series Equivalent Input/Output Impedance

VCC = 22 V
VCC = 22 V

Pin = 1.5W*-

Pin == 1.75 W

Pin =

125 W
58

Pin = 1W*
56

1.8

1.9

1.8

f, FREQUENCY (GHz)

Rgure 9. Efficiency versus Frequency

Figure 7. Power Output versus Frequency

MOTOROLA RF DEVICE DATA

2-315

MRAL1720 Series

TYPICAL CHARACTERISTICS

MRAL1720-20

f=2GjlU 17GHz
| >s> 1.7GHz
f = 2 GHz
OUTPUT

Pin_ = 5W
Pin - <W

Pin ==

Rgure 11. Series Equivalent Input/Output Impedance

VCc = 22 V

Pin =*2W

Pin =

1.7

1.8

f, FREQUENCY (GHz)

1.8

1.9

I, FREQUENCY (GHz)

Rgure 10. Power Output versus Frequency

Rgure 12. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-316

MRAL1720 Series
100

~~ \
MRAL1720-20

MRAL1720-9

The graph shown displays MTTF in hours x ampere2

emitter current for each of the devices. Life tests at elevated

temperatures have correlated to better than 10% to the

theoretical prediction for metal failure. Sample MTTF
calculations based on operating conditions are included below.
=
a.

Example of MTTF for MRA1720-9 Conditions

P0 -9W
Pin =2W
VCC - 28V

I
CO
cc

1 0.1

>j - 40%

TFLANGE - 7*C

100 x P0

.., .

Ir - 'E =

" O-803 A
U
Vc VCC
PDISS -Pin + VCC-IC-B= 15.48W
TJUNC " TFLANGE + JF " 15.48 = 139.6T
0.4 x 108 Hrs. Amp2 -..

MTTF =

MTTF -

j-j

= 620,338 Hrs

MRAU720-5'
0.01

MRAL1720-2

70.8 Yrs

0.001

110

130

150

170

190

210

Tj,JUNCTION TEMPERATURE CO
Figure 13. MTTF Factor versus Junction Temperature

100 pf
CERAMICCAP

MRAL1720-2

SO n*

MRAL17209

100 pf CHIP

MRAL1720S

MRA11720-20
Foci wrapor pitta aroundto groundptjne.
IDBypta aoKtoa a ground(TOO pf coamic chip).
171 Un Vcetvpra i41( pFchip.0.1^F chipandSMF.
Ekardmtttrul 0.020 mcrij!mi.tflwi, 2.55

II Ct. CS - 0.1^F chipcapacitor

aa.c3.C4- ipF
3ICS- tOOpFIATC)
41a S0,<f50\WEI<aroMic

51' - 1 maShimthrugroundplana
(1 Malarial - G!as$.Tf)on

, = Z.S5

Rgure 14. Test Circuit Boards (Not to Scale)

MOTOROLA RF DEVICE DATA

2-317

Thictnen - .020 in.

1.0 01 copper

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRAL2023
Series

The RF Line

Microwave Power Transistors

... designed primarily for wideband, large-signal output and driver amplifier stages in

6.8 to 8 dB
2-2.3 GHz
1.5 TO 12 WATTS
BROADBAND
MICROWAVE POWER
TRANSISTORS

the 2 to 2.3 GHz frequency range.

Designed for Class C, Common Base Power Amplifiers
Specified 22 Volt, 2.3 GHz Characteristics:
Output Power 1.5 to 12 Watts
Power Gain 6.8 to 8 dB Min

Collector Efficiency 35 to 40% Min

Built-in Matching Network for Broadband Operation
Gold Metallization for Improved Reliability

Diffused Ballast Resistors

CASE 394-01. STYLE 1

(MRA .25)

MAXIMUM RATINGS

Rating

Symbol

1.5

-3

-6

-12

Unit

Collector-Base Voltage

VcES

Vdc

Emitter-Base Voltage

VEBO

3.5

Vdc

Collector Current Continuous

Operating Junction Temperature

200

Tstg

-65 to +150

Storage Temperature Range

0.25

0.5

1.25

2.5

Adc

THERMAL CHARACTERISTICS

Symbol

Characteristic

Thermal Resistance, RF, Junction to Case

Rwc

Max
30

Unit
8

4.5

C/W

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC =
dC =
dC =
dc =

10 mA, Vbe = 0)
20 mA, Vbe = 0)
50 mA, Vbe = 0)
100 mA, Vbe = o)

V(BR)CES
MRAL2023-1.5
"3
-6
-12

Emitter-Base Breakdown Voltage

(l
(IE
(IE
(IE

=
=
=
=

Vdc
42

Vdc

v(BR)EBO

0.2 mA, Ic = 0)
0.4 mA, Ic = 0)
1 mA, Ic = 0)
2 mA, IC = 0)

MRAL2023-1.5
-3
-6
-12

Collector Cutoff Current

MRAL2023-1.5

(VCb = 22 V, lE = 0)

3.5
3.5

3.5
0.25

ICBO

-3

0.5

-6

1.25

-12

2.5

MOTOROLA RF DEVICE DATA

2-318

3.5

mAdc

MRAL2023 Series

ELECTRICAL CHARACTERISTICS continued

Symbol

Characteristic

Min

Typ

Max

UnH

ON CHARACTERISTICS
DC Current Gain

dc =
(lC =
dC =
dC =

"FE

0.1 A. VCE = 5 V)
0.2 A, Vce = 5 V)
0.5A,VCE = SV)
1 A. VCE = 5 V)

MRAL2023-1.5
-3

-6

-12

90
SO

90
90

DYNAMIC CHARACTERISTICS

Output Capacitance

MRAL2023-1.5

(Vce = 22 B, lE = 0, f = 1 MHz)

Cob

3.5

-3

-6

(1)

FUNCTIONAL TESTS

Common-Base Amplifier Power Gain

GPB

(Vce = 22 V, Pout'" 1-6 W. f 2.0 & 2.3 GHz)

(Vce = 22 V, P0ut = 3 W. f = 2.0 & 2.3 GHz)
(Vce = 22 V, Pout = 6 W, f = 2.0 & 2.3 GHz)
(Vce = 22 V, Pout = 12 W, f = 2.0 & 2.3 GHz)

MRAL2023-1.5
-3

8
8

-6
-12

Collector Efficiency

6.8
6.8
%

(VCe " 22 V. Pout = 15 W, f = 2.0 & 2.3 GHz)

(Vce = 22 V, Pout = 3 W, f = 2.0 & 2.3 GHz)
(Vce = 22 V, Pout = 6 W, f = 2.0 & 2.3 GHz)

(Vce = 22 V. P0ut 12 W, f = 2.0 & 2.3 GHz)

MRAL2023-1.5
-3
-6

-12

(1) Not measurable because of output matching network.

MOTOROLA RF DEVICE DATA

2-319

MRAL2023 Series

TYPICAL CHARACTERISTICS
MRAL2023-1.5

2
n.

f\it in

= 0.19 W
= 0.15VV

1'
Pin = 0.12W

_Pin =

0.09W

Rgure 2. Series Equivalent Input/Output Impedance

Vce = 22 V
0.1

2.05

2.1

2.15

I. FREQUENCY (GHz)

Rgure 1. Power Output versus Frequency

r Pto-

0.19 W^

\
2

2.05

2.1

2.15

2.2

/
2.25

2.3

f, FREQUENCY (GHi)

Rgure 3. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-320

MRAL2023 Series

TYPICAL CHARACTERISTICS
MRAL2023-3

Pin =

^~~~

0.5 W

_Pin = 0.4W
Pin = 03W

1
"

Pin =

0.25 W

Pin = 0.2W

0.2

Figure S. Series Equivalent Input/Output Impedance

0.1

Vce = 22 V

2.05

2.1

2.15

2.2

2.25

2.3

(.FREQUENCY (GHz)

Rgure 4. Power Output versus Frequency

Pin =

2.05

2.1

2.15

2.2

).5W

2.25

2.3

I. FREQUENCY (GHz)

Figure 6. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-321

MRAL2023 Series

TYPICAL CHARACTERISTICS
MRAL2023-6

hn - w v

Pj = 0.95 W

= 0.76 W

2
p

n0-6

Rgure 8. Series Equivalent Input/Output Impedance

Vce = 22 V
2

2.05

2.1

2.15

2.2

2.25

2.3

(.FREQUENCY (GHz)

Rgure 7. Power Output versus Frequency

Pin =

2.05

2.1

1.2 W

2.15

2.2

225

f, FREQUENCY (GHz)

Figure 9. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-322

MRAL2023 Series

TYPICAL CHARACTERISTICS
MRAL2023-12

100
80

Pi, = 2.5*
Pin = 2W
""*

Pj1

n=un

= 1-251 V ,-

= 1W

Figure 11. Series Equivalent Input/Output Impedance

Vce = 22 V
1

2.05

2.1

2.15

2.2

2.25

2.3

(.FREQUENCY (GHz)

Rgure 10. Power Output versus Frequency

Pin =

2.05

2.1

2.15

2.5 W

2.2

2.25

2.3

f. FREQUENCY (GHz)

Rgure 12. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-323

MRAL2023 Series
The graph shown below displays MTTF in hours x ampere2
emitter current for each of the devices. Life tests at elevated
temperatures have correlated to better than 10% to the theo

retical prediction for metal failure. Sample MTTFcalculations

based on operating conditions are included below.
0,000,000
\

1,000,000

100.000

V
10,000

1.000

100
100

120

140

160

180

200

220

240

Tj. JUNCTION TEMPERATURE PC)

Example of MTTF for MRA2023-12 Conditions

P0 - 12 W
Pin =2.5W
Vce = 22 V
r, = 40%

TFLANGE = 7*C

nc " Vce

POISS = Pin + Vce- 'C - Po = 2-42 W

TJUNC = TFLANGE + lJF " PDISS> = 161.89X
MTTF =

2.05 x 105 Hrs. Amp2

r~5

ic2

110.834 Hrs

MTTF = 12.65 Yrs

Rgure 13. MTTF Factor versus Junction Temperature

Rgure 14. Test Circuit Boards (Not to Scale)

MOTOROLA RF DEVICE DATA

2-324

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRAL2023-18
MRAL2023-18H

The RF Line

Microwave Power Transistors

... designed primarily for wideband, large-signal output and driver amplifierstages in

7dB
2-2.3 GHz
18 WATTS
BROADBAND
MICROWAVE POWER
TRANSISTORS

the 2 to 2.3 GHz frequency range.

Designed for Class C, Common Base Power Amplifiers

Specified 22 Volt, 2.3 GHz Characteristics:
Output Power 18 Watts
Power Gain 7 dB Min

Collector Efficiency 35%, Min

Built-in Matching Network for Broadband Operation

Gold Metallization for Improved Reliability
Diffused Ballast Resistors

Hermetic Package for Military/Space Applications

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Base Voltage

VcES

Vdc

Emitter-Base Voltage

Rating

CASE 393-01, STYLE 1

(HLP-11)
MRAL2023-18H

VebO

3.5

Vdc

Collector Current Continuous

Adc

Operating Junction Temperature

200

Tstg

-65 to +150
-65 to +200

Symbol

Max

Unit

Rejc

2.5

x/w

Symbol

Min

Storage Temperature Range

MRAL2023-18
MRAL2023-18H

THERMAL CHARACTERISTICS
Characteristic

CASE 334-01, STYLE 1

(MRA .25)
MRAL2023-18

Thermal Resistance, RF, Junction to Case

ELECTRICAL CHARACTERISTICS (Tc = 25Cunless otherwise noted)

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage dc - 160 mA, Vgr: == 0)

V(BR)CES

Emitter-Base Breakdown Voltage (lg = 2 mA, Ic - 0)

V(BR)EBO

3.5

Collector Cutoff Current (Vcb = 22 V, lg = 0)

ICBO

Vdc

Vdc
4

mAdc

ON CHARACTERISTICS

DC Current Gain dc = 800 mA, Vce = 5 V)

"FE

GpB

100

FUNCTIONAL TESTS

Common-Base Amplifier Power Gain

(Vce = 22 V, Pout = 18 W, f = 2.0 & 2.3 GHz)

Collector Efficiency (Vce = 22 V, Pout = 18 W, f = 2.0 & 2.3 GHz)

MOTOROLA RF DEVICE DATA

2-325

MRAL2023-18, -18H Series

TYPICAL CHARACTERISTICS

The graph shown below displays MTTF in hours x ampere2

emitter current for each of the devices. Life tests at elevated
temperatures have correlated to better than 10% to the theo

retical prediction formetalfailure. Divide MTTF by Ic2 forMTTF

in a particular application.
100

10
=

0.1

0.01

110

130

ISO

170

190

210

Tj, JUNCTION TEMPERATURE (C)

Rgure 1. MTTF Factor versus Junction Temperature

(a) MRAL2023-18

Bard material - 0.018" dielectric thickness teflon fiberglass.

- Ground area to backside of board.

Ci-Cj 100 pFporcelain ceramic chip.

C*
- 0.1 yf ceramic chip.
Cs
- 50>F. 50V electrolytic.
Rici

- 5 turns g 28AWG, ~0.125" 4a.

MRAL2023-1BH

MRAL2023-1SH

(b) MRAL2023-18H

Figure 2. Test Circuit Boards (Not to Scale)

MOTOROLA RF DEVICE DATA

2-326

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRAL2023H
Series

The RF Line

Microwave Power Transistors

... designed primarily for wideband, large-signal output and driver amplifier stages in

6.8 to 8 dB
2-2.3 GHz
1.5 TO 12 WATTS
BROADBAND

the 2 to 2.3 GHz frequency range.

Designed for Class C, Common Base Power Amplifiers

Specified 22 Volt, 2.3 GHz Characteristics:
Output Power 1.5 to 12 Watts

MICROWAVE POWER
TRANSISTORS

Power Gain 6.8 to 8 dB

Collector Efficiency 35 to 40%

Built-in Matching Network for Broadband Operation

Gold Metallization for Improved Reliability

Diffused Ballast Resistors

Hermetic Package for Military/Space Applications

CASE 393-01, STYLE 1

(HLP-11)
MAXIMUM RATINGS

Symbol

Rating

1.5H

-3H

-6H

Collector-Base Voltage

VcES

Emitter-Base Voltage

VEBO

3.5

0.25

-12H

Vdc
Vdc
2.5

1.25

0.5

Unit

Adc

Collector Current Continuous

Operating Junction Temperature

200

Tstg

-65 to +200

Storage Temperature Range

THERMAL CHARACTERISTICS

Symbol

Characteristic

Thermal Resistance, RF, Junction to Case

R&jc

Unit

Max
30

4.5

"C/W

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC
dc
dc
dC

=
=
=
=

10 mA, Vbe = 0)
20 mA, Vbe = )
50 mA, VBe = )
100 mA, Vbe = 0)

Emitter-Base Breakdown Voltage

(l = 0.2 mA, Ic = 0)
(IE = 0.4 mA, Ic = 0)

Vdc

V(BR)CES
MRAL2023-1.5H
3H
- 6H
12H

42
42

42
Vdc

V(BR)EBO
MRAL2023-1.5H
- 3H

3.5

- 6H
-12H

3.5

(IE = 1 mA, Ic = 0)
E = 2 mA. Ic = 0)
Collector Cutoff Current

MRAL2023-1.5H

(VCb = 22 V. IE = 0)

- 3H
-

3.5
3.5

0.25

<CBO

-12H

MOTOROLA RF DEVICE DATA

2-327

0.5
1.25

2.5

mAdc

MRAL2023H Series
ELECTRICAL CHARACTERISTICS continued
Symbol

Characteristic

Min

Typ

Max

Unit

ON CHARACTERISTICS
DC Current Gain

(lC
dc
dc
dC

=
=
=
=

0.1 A, Vce = 5 V)
0.2 A, VCe = 5 V)
0.5 A, Vce = 5 V)
1 A, VCE = 5 V)

MRAL2023-1.5H
- 3H
- 6H
- 12H

"FE
10

DYNAMIC CHARACTERISTICS

Output Capacitance

MRAL2023-1.5H
- 3H

(VCB = 22 V, lE = 0, f = 1 MHz)

Cob

3.5

-12H

(1)
(1)

FUNCTIONAL TESTS

Common-Base Amplifier Power Gain

(Vce
(VCe
(VCE
(VCe

=
=
=
=

22 V, Pout
22 V, Pout
22 V, Pou,
22 V, Pout

=
=
=
=

GPB

1.5 W. f = 2.3 GHz)

3 W, f = 2.3 GHz)
6 W. f = 2.3 GHz)
12 W, f = 2.3 GHz)

=
=
=
=

22 V, Pout
22 V, Poul
22 V, Pout
22 V, Poul

=
=
=
=

6.8

-12H

Collector Efficiency

(VCE
(VCe
(VCE
(Vce

MRAL2023-1.5H

6.8

1.5 W, f = 2.3 GHz)

3 W, f = 2.3 GHz)
6 W, f = 2.3 GHz)
12 W, f = 2.3 GHz)

MRAL2023-1.5H

-12H

Note 1. Not measurable because of output matching network.

TYPICAL CHARACTERISTICS
MRAL2023-1.5H

pin == 0.24W

Pin = 0.2W

0.8

Pin =

0.15 W

Pin =

0.12 W

Pin =

0.09 W

Figure 2. Series Equivalent Input/Output Impedance

I 0.6
0.4

0.1

2.05

2.1

2.15

2.2

225

Pin =

2.3

0.24 W

f, FREQUENCY (Gtal

Rgure 1. Power Output versus Frequency

2.05

2.1

2.15

2.2

2.25

f. FREQUENCY (GHz)

Rgure 3. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-328

MRAL2023H Series
TYPICAL CHARACTERISTICS
MRAL2023-3H

8
6

Pin ~

osw.

Pin = 0.4W

Pin =

0.3 W

Pin =

0.25 W.

0.8

0.6

Rgure 5. Series Equivalent Input/Output Impedance

Pin == 0.2W
0.2

PirT = 0.3 V
0.1

2.05

2.1

2.15

2.2

2.25

2.3

f, FREQUENCY (GHz)

Rgure 4. Power Output versus Frequency

2.05

2.1

2.15

2.2

2.25

2.3

f, FREQUENCY (GHz)

Rgure 6. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-329

MRAL2023H Series
TYPICAL CHARACTERISTICS
MRAL2023-6H

100
80
60

= 1.2 W

Pjn = 0.85W

= 0.75W

Pin = 0.6 W"

Figure 8. Series Equivalent Input/Output Impedance

Pin =

2.05

0.5 W

2.1
2.15
2.2
f. FREQUENCY (GHz)

225

2.3

-Pin = UW

Rgure 7. Power Output versus Frequency

2.05

2.1

2.15

2.2

2.25

2.3

f, FREQUENCY (GHz)

Rgure 9. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-330

MRAL2023H Series
TYPICAL CHARACTERISTICS
MRAL2023-12H

Pin = 2.5/ 1/

Pi = 2W
Pir .= 1.7 W

Pi = 1.5Vv

^*P n =

1-2

Figure 11. Series Equivalent Input/Output Impedance

S+ = 1W
The graph shown below displays MTTF in hours x ampere2
2

2.05

2.1

2.15

2.2

2.25

emitter current for each of the devices. Life tests at elevated

2.3

temperatures have correlated to better than 10% to the theo

f. FREQUENCY (GHz)

retical prediction formetalfailure. Divide MTTF by Ic2foractual

Rgure 10. Power Output versus Frequency

MTTF in a particular application.

10.000.000 E3
~

1.000.000 =

\
48

100.000

E\
z

10.000 =

vPin =25Vi^

1.000 =
2

2.05

2.1

2.15

2.2

2.25

2.3

(.FREQUENCY (GHz)
-

Rgure 12. Efficiency versus Frequency

100

120

140

160

180

200

220

240

Tj. JUNCTION TEMPERATURE l8CI

Rgure 13. MTTF Factor versus Junction Temperature

MOTOROLA RF DEVICE DATA

2-331

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRAL2327
Series

The RF Line

Microwave Power Transistors

5.5 to 6.8 dB

... designed primarily for wideband, large-signal output and driver amplifier stages in
the 2.3 to 2.7 GHz frequency range.

2.3-2.7 GHz
1.3 TO 12 WATTS
BROADBAND
MICROWAVE POWER

Designed for Class C, Common Base Power Amplifiers

Specified 22 Volt, 2.7 GHz Characteristics:

Output Power 1.3 to 12 Watts

Power Gain 5.5 to 6.8 dB Min, Common Base
Collector Efficiency 30 to 40% Min

TRANSISTORS

Built-in Matching Network for Broadband Operation

Gold Metallization for Improved Reliability

Diffused Ballast Resistors

CASE 394-01, STYLE 1

(MRA .25)

MAXIMUM RATINGS

Rating

Symbol

Collector-Base Voltage

VcES

Emitter-Base Voltage

vebo

Operating Junction Temperature

Storage Temperature Range

-3

-1.3

-6

-12

Unit
Vdc

3.5

Vdc

200

Tstg

-65 to +150

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, RF, Junction to Case

Symbol

RtfJC

Max

Unit

Min

Typ

4.5

C/W

Max

Unit

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

dC
dC
(lC
dC

=
=
=
=

10
20
50
80

mA, Vbe
mA, VBe
mA, VB
mA, Vbe

=
=
=
=

0)
0)
0)
0)

Collector-Base Breakdown Voltage

dC = 0.5 mA, l = 0)
dC = 1 mA, l = 0)
dC = 2.5 mA, !E = 0)
dC = 8.0 mA, l = 0)
Emitter-Base Breakdown Voltage
dE = 0.2 mA, lC = 0)

V(BR)CES
MRAL2327-1.3
-3
-6
-12

Vdc

v(BR)CBO
MRAL2327-1.3
-3
-6
-12

38
38

v(BR)EBO

<lE = 0.4 mA, Ic = 0)

dE = 1 mA. Ic = 0)
(l = 2 mA, Ic = 0)

MRAL2327-1.3
-3
-6
-12

Collector Cutoff Current

MRAL2327-1.3

(Vcb = 22 V, lE = 0)

Vdc
42

Vdc
3.5

3.5
3.5

3.5
0.25

'CBO

-3
-6
-12

mAdc

0.5

1.25
2.0

(continued)

MOTOROLA RF DEVICE DATA

2-332

MRAL2327 Series
ELECTRICAL CHARACTERISTICS continued
Symbol

Characteristic

Max

Typ

Min

Unit

ON CHARACTERISTICS
DC Current Gain

(lC
dC
(lC
(lC

=
=
=
=

100
200
500
800

mA,
mA,
mA,
mA,

"FE

Vce
VCe
Vce
Vce

=
=
=
=

5
5
5
5

V)
v>
V)
V)

MRAL2327-1.3

-3

-6

-12

100

FUNCTIONAL TESTS

Common-Base Amplifier Power Gain

MRAL2327-1.3
-3
-6

(VCE = 22 V, Pout = 12 W, f = .2.7 GHz)

5.5

22 V, Pout
22 V, Poul
22 V, Pout
22 V, Pout

6.6
7

-12

6.8

Collector Efficiency

(Vce =
(VCE =
(VCE =
(Vce =

GPB

IVCE = 22 V, Pout = 1.3 W. f = 2.7 GHz)

(VCE = 22 V, Pou, = 3 W, f = 2.7 GHz)
(Vce = 22 V, Pout = 6 W, f = 2.7 GHz)

=
=
=
=

1.3 W, f = 2.7 GHz)

3 W, f = 2.7 GHz)
6 W, f = 2.7 GHz)
12 W, f = 2.7 GHz)

MRAL2327-1.3
-3
-6
-12

35
35

TYPICAL CHARACTERISTICS

MRAL2327-1.3

MRAL2327-3

Pin = 0.4W

~^
0.3 W

Pin = 0.81 W

I E 111

0.51W
1

0.41 W

0.2 W

0.3 !W

2.4

2.5

2.6

2.4

f, FREQUENCY IGHjI

2.5

2.6

2.7

f. FREQUENCY (GHz)

Rgure 1. Power Output versus Frequency

Rgure 2. Power Output versus Frequency

f-,

Pou = 1.3W^-

# 35

a
B-

42
\ 'CC-

f out

Vce = 22V

22V _
= 3W

2.4

2.5

2.6

2.4

f. FREQUENCY (GHz)

2.6

I. FREQUENCY IGHj)

Figure 2. Collector Efficiency versus Frequency

Figure 4. Collector Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-333

MRAL2327 Series

TYPICAL CHARACTERISTICS

MRAL2327-6

MRAL2327-12

P 20

I
2.5 W

"Pin = 1-5 W

1.2W

0^5W

0.75 W

1.5 W

0.6 W

2.3

2.4

2.5

2.6

2.7

!.3
2.:

2.2

2.4

2.5

2.6

2.7

f, FREQUENCY (GHz)

f, FREQUENCY (6Hz)

Rgure 5. Power Output versus Frequency

Rgure 7. Power Output versus Frequency

><_>

H 45

40
V CC

FOut

= 22V
= 6W

Vcc = 22 V
pout = 12 W

-I
2.4

2.5

2.2

2.6

2.3

2.4

2.5

2.6

f, FREQUENCY (GHz)

(, FREQUENCY (GHz)

Rgure 6. Collector Efficiency versus Frequency

Rgure 8. Collector Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

2-334

MRAL2327 Series

The graph shown below displays MTTF in hours x ampere^

emitter current for each of the devices. Life tests at elevated

temperatures have correlated to better than * 10% to the theo

retical prediction for metalfailure. Divide MTTF by Iq2for MTTF

in a particular applications.
10.000,000 r=

MRAL2327-1.3

F"
MRAL2327-3

100

MRAL2327-6

120

140

160

180

200

220

240

Tj, JUNCTION TEMPERATURE lC|

Figure 10. MTTF Factor versus Junction Temperature

Figure 9. Circuit Boards

(Not to scale.)

Board material 0.018" dielectric thickness Teflon fiberglass

* Ground through to back side of board
CI, C3 100 pF porcelain ceramic chip
C4 0.1 nF ceramic chip
C5 50 /iF. 50 V electrolytic
RFC1 5 turns #22 AWG. -0.125 dia.

MOTOROLA RF DEVICE DATA

2-335

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

Advance Information

MRAL2327-12H

The RF Line

Microwave Power Transistor

... designed primarily for wideband, large-signal output and driver amplifier stages in

7.0 dB

the 2.3 to 2.7 GHz frequency range.

2.3-2.7 GHz
12 WATTS

Designed for Class C, Common Base Power Amplifiers

BROADBAND
MICROWAVE POWER
TRANSISTOR

Specified 22 Volt, 2.7 GHz Characteristics:

Output Power 12 Watts
Power Gain 7.0 dB Min, Common Base

Collector Efficiency 45% Min

Built-in Matching Network for Broadband Operation
Gold Metallization for Improved Reliability
Diffused Ballast Resistors

Hermetic Package for Military/Space Applications

CASE 393-01, STYLE 1

(HLP-11)
MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Base Voltage

VcES

Vdc

Emitter-Base Voltage

VebO

3.5

Vdc

200

Tstg

-65 to +200

Symbol

Max

Unit

RJC

4.5

C/W

Operating Junction Temperature

Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case (RF)

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage dc = 80 mA, Vbe = 0)

V(BR)CES

Collector-Base Breakdown Voltage dc = 8.0 mA. Ig = 0)

V(BR)CBO

Emitter-Base Breakdown Voltage (l = 2.0 mA, Ic = 0)

v(BR)EBO

3.5

Collector Cutoff Current (Vcb = 22 v- 'E = >

'CBO

2.0

Vdc
Vdc

Vdc
mAdc

ON CHARACTERISTICS

DC Current Gain dc = 800 mA, Vce = 50 v<

"FE

FUNCTIONAL TESTS

Common-Base Amplifier Power Gain

GPB

7.0

(VcE = 22 V, Pout = 12 W, f = 2.3 and 2.7 GHz)

Collector Efficiency

(Vce = 22 V, Pout = 12 W, f = 2.3 and 2.7 GHz)

This document contains information on a new product. Specifications and information herein are subject to change without notice.

MOTOROLA RF DEVICE DATA

2-336

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF134

The RF MOSFET Line

5.0 W

N-CHANNEL ENHANCEMENT-MODE
RF POWER FIELD-EFFECT TRANSISTOR

... designed for wideband large-signal amplifier and oscillator

applications in the 2.0 to 400 MHz range.

2.0-400 MHz

N-CHANNEL MOS
BROADBAND RF POWER

FET

Guaranteed 28 Volt, 150 MHz Performance

Output Power = 5.0 Watts

Minimum Gain = 11 dB

Efficiency 55% (Typical)

Small-Signal and Large-Signal Characterization

Typical Performance at 400 MHz, 28 Vdc, 5.0 W

Output = 10.6 dB Gain

100% Tested For Load Mismatch At All Phase Angles With

30:1 VSWR

Low Noise Figure 2.0 dB (Typ) at 200 mA, 150 MHz

Excellent Thermal Stability, Ideally Suited For Class A Operation

G O

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain Source Voltage

VDSS

Vdc

Drain Gate Voltage

VDGR

Vdc

VQS

Vdc

0.9

Adc

17.5

Watts

0.10

W/C

Tstg

-65 to+150

(RGS=1.0Mn>
Gate Source Voltage
Drain Current Continuous

Total Device Dissipation <> Tc = 25C

Derate above 25C

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case

Symbol

Max

Unit

R0JC

C/W

Handling and Packaging MOS devices are susceptible to damage from electrostaticcharge.
Reasonable precautions in handling and packaging MOS devices should be observed.

1~E

1~T
NOTES
1 DIMENSIONINGAND TOIERANCING PER
ANSI Y14 5M, 1332
2 CONTROLLINGDIMENSION INCH
MTUIMETtRS
MAX
2514

DIM
A

MtN
2439

940

c
D
E

582
54?

216
381

266
457

INCHES
MtN

MAX

0960

0990

990

0370

0390

713

0229

596

0215

0235

0035

0105

0.11

015

0150
0004

0180

J
K

10.04

0395

0405

623
2007

1028
50'
330
647
2057

0790

0.8t0

18.29

1854

0.720

0 730

0
R

288

2-337

0006

40"

5(7

0113

0130
0255

0245

CASE 211-07

MOTOROLA RF DEVICE DATA

0281

MRF134
ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted)
Characteristic

Symbol

Min

V(BR)DSS

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Vdc

(VGS = 0. ID= 5.0 mA)

Zero Gate Voltage Drain Current

loss

1.0

mAdc

1.0

uAdc

6.0

Vdc

(VDS = 28V,VGS = 0)
Gate-Source Leakage Current

IGSS

(VGS = 20V,VDS = 0)
ON CHARACTERISTICS

Gate Threshold Voltage

vGS(th)

1.0

3.5

9is

110

(lD='0mA,VDS=10V)
Forward Transconductance

mmhos

(VDs=10V, lD = 100 mA)

DYNAMIC CHARACTERISTICS

Input Capacitance

Cjss

7.0

9.7

2.0

(VDs = 28 V, VGS = 0. f = 1.0 MHz)

Output Capacitance

C0ss

(Vds = 28 V, Vqs = 0. f = 1.0 MHz)

Reverse Transfer Capacitance

Crss

2.3

(VDS = 28 V. Vqs = 0. f = 1.0 MHz)

FUNCTIONAL CHARACTERISTICS

Noise Figure

(Vds = 28 Vdc. Id = 200 mA. f = 150 MHz)

Gps

Common Source Power Gain

(Vdd = 28 Vdc. Pout = 5.0 W.

IDQ= 50 mA)

f = 150 MHz (Fig. 1)

f = 400 MHz(Fig. 14)

10.6

Drain Efficiency (Fig. 1)

<VDD = 28 Vdc, Pout = 5.0 W, f = 150 MHz. Idq = 50 mA)

Electrical Ruggedness (Fig. 1)

No Degradation in Output Power

<l>

(V0d = 28 Vdc, Pou, = 5.0 W. f = 150 MHz. IDQ= 50 mA.

VSWR 30:1 at all Phase Angles)

FIGURE 1 150 MHz TEST CIRCUIT

RF Input

'Bias Adjust
C1.C4 Arco406, 15-115 pF
C2 Arco 403, 3-35 pF
C3 - Arco 402.1.5-20 pF
CS. C6. C7, C8, CI 2 0.1 pF Erie Redcap
C9 10 MF, 50 V
C10. C11 680 pF Feedthru

L3 20 Turns, #20 AWG Enamel Wound on R5

L4 Ferroxcube VK-200 19/4B

R168 n, LOW Thin Rim

R2 10kn, 1/4W
R3 10 Turns, 10 kn Beckman Instruments 8108
R4 1.8kn,1/2W
R5 - 1.0 MO. 2.0 W Carbon
Board G10, 62 mils

D1 1N5925A Motorola Zener

LI 3 Turns, 0.310" ID, #18 AWG Enamel, 0.2" Long

L2 3-1 /2 Turns. 0.310" ID. &18 AWG Enamel, 0.25' Long

MOTOROLA RF DEVICE DATA

2-338

MRF134

FIGURE 3 -

FIGURE 2 OUTPUT POWER versus INPUT POWER

OUTPUT POWER versus INPUT POWER

10
1 MHz

too

.150-

8fj

f MHz

4.0

100

225
4UU

150
22b

rr 3.0
S

| 4.0
cF z.u

^
/ ^

Voo = 28 V
dq = 50 mA

2C 0

6( )0

4 10

y^
j**^

400

8C 0

vnn = 13.5 V
>oa -50 mA

y
3

400

200

600

800

10C

Pin.INPUT POWER (MIUWATTS)

Pin- INPUT POWER (MIUWATTS)

FIGURE 4 -

7^
J 1.0 A

| 2.0

kv
#

^"^

OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE B -

OUTPUT POWER versus SUPPLY VOLTAGE

f= lOOMHz

f = 150 MHz
80

Pin= 800 mW,

i 6.0

"41 10 mW_

%
r

--"""j IOmW_

1 2.0

'00 = 50 mA"

Vqq. SUPPLY VOLTAGE (VOLTS)

V0D. SUPPLY VOLTAGE (VOLTS)

FIGURE 6 OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 7 -

f = 22S MHz
8.0

OUTPUT POWER versus SUPPLY VOLTAGE

f = 400 MHz

8.U

Pi*. = 80P mllV

6.0

'00 = 50 mA

S
3

400 nriW

200nnW

4.0
a.

J 2.0
n

Von SUPPLY VOLTAGE (VOLTS)

Vdo- SUPPLY VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-339

MRF134

FIGURE 9 -

FIGURE 8 OUTPUT POWER versus GATE VOLTAGE

500

1 1 1

V00= 28V
IfjQ = 50 mA
Pjn= Constant

S> 5.0

DRAIN CURRENT versus GATE VOLTAGE

(TRANSFER CHARACTERISTICS)

Vqs = 10 V

400 MHz,

400
3

%
S 3.0

^ 300

1 20

3
CC

-"in

0
-2.0

-1.0

y*
0

VGS|th) = 3.5V

1.0

2.0

3.0

4.0

1.0

2.0

V
^v

v00 =

1
28V

FIGURE 11 -

5.0

6.0

7.0

8.0

MAXIMUM AVAILABLE GAIN

versus FREQUENCY

I 4-4-

Iqq = 200 mA

4.0

VGS. GATE-SOURCE VOLTAGE (VOLTS)

FIGURE 10 GATE-SOURCE VOLTAGE versus

CASE TEMPERATURE

3.0

Typical DeviceShown

rii 100

VcctiM = 3.5 V

Vqs.GATE-SOURCE VOLTAGE (VOLTS)

1.020

' 150 MHz

lpo = 100 mA

Z. 0.980

'V s

3
s

s,
lot 1= 5 ImA

IS2.I2

iHSn ') (1-1 S2 zKl

s 20

0.940

ca 0.920

Vqs = 28 V

"'0

00 mAdc

100

125

150

FIGURE 13 FIGURE 12 -

100

f. FREQUENCY (MHz)

Tfj. CASE TEMPERATURE (C)

CAPACITANCE versus VOLTAGE

MAXIMUM RATED FORWARD BIASED

SAFE OPERATING AREA

1
-vgs

= ov -

JT 20

0.3

0.2

TC = 25C

g 0.1

I 12

3 0.07
I 0.05

-OM

^003

tJ8.0

1
1

0.02

4.0

8.0

5.0

Vqs. DRAIN-SOURCE VOLTAGE (VOLTS)

Vqs.DRAIN-SOURCE VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-340

100

MRF134

FIGURE 14 - 400 MHz TEST CIRCUIT

R3'

T . r
JT^

T <VDD=28V
C13 =FC14

--nor-v^

Ccio liS

Vy-j
CI

RFInput V-^lH

~|)\< RF Output

hrf

* Bias Adjust
C1. C6 270 pF. ATC 100 mils
C2. C3. C4. C5 0-20 pF Johanson

R2 10 kO. 1/4W

R3 10 Turns. 10kfl Beckman Instruments 8108

R4 1.8 k(l. 1/2 W

C7. C9. CIO. C14 0.1 (iF Erie Redcap. 50 V

C8 - 0.001 nF

LI -

6 Turns. 1/4" ID. #20 AWG Enamel

Z1
Z2
Z3
Z4
Z5

L2 -

Ferroxcube VK-200 19/4B

Board Glass Teflon. 62 mils

C11 10 mF, 50 V
C\2. C13 680pF Feedthru
D1 1N5925A Motorola Zener

1.4" x 0.166" Microstrip

1.1" x 0.166" Microstrip
0.95" x 0.166" Microstrip
2.2" x 0.166" Microstrip
0.85" x 0.166" Microstrip

R1 68 iJ. LOW Thin Film

FIGURE 15 -

LARGE-SIGNAL SERIES EQUIVALENT

INPUT/OUTPUT IMPEDANCES. Z[nt. Zql*

MOTOROLA RF DEVICE DATA

2-341

MRF134

FIGURE 16 -

COMMON SOURCE SCATTERING PARAMETERS

VDS = 28 V. ID= 100 mA

S,1

S21

S22

S12

(MHz)

ism

IS21I

lS-121

L4>

IS22

<t>

1.0

0.989

-1.0

11.27

179

0.0014

0.954

-1.0

2.0

0.989

-2.0

11.27

179

0.0028

0.954

-2.0

5.0

0.988

-5.0

11.26

176

0.0069

0.954

-4.0

0.985

-10

11.20

173

0.014

0.951

-9.0

0.977

-20

10.99

166

0.027

0.938

-18

0.965

-30

10.66

159

0.039

0.918

-26

0.950

-39

10.25

153

0.051

0.895

-34

0.931

-47

9.777

147

0.060

0.867

-42

0.912

-53

9.359

142

0.069

0.846

-49

0.892

-58

8.960

138

0.077

0.828

-56

0.874

-62

8.583

135

0.085

0.815

-62

0.855

-66

8.190

131

0.091

0.801

-68

100

0.833

-70

7.808

128

0.096

0.785

-74

110

0.827

-73

7.661

125

0.101

0.784

-77

120

0.821

-76

7.515

122

0.107

0.784

-82

130

0.814

-79

7.368

119

0.113

0.784

-85

140

0.808

-82

7.222

116

0.119

0.783

-88

150

0.802

-86

7.075

114

0.125

0.783

-90

160

0.788

-89

6.810

112

0.127

0.780

-92

170

0.774

-92

6.540

110

0.128

0.774

-94

180

0.763

-94

6.220

108

0.130

0.762

-98
-100

190

0.751

-97

5.903

106

0.132

0.760

200

0.740

-100

5.784

104

0.134

0.758

-103

225

0.719

-104

5.334

100

0.136

0.757

-107

250

0.704

-108

4.904

0.139

0.758

-110

275

0.687

-113

4.551

0.141

0.757

-114

300

0.673

-117

4.219

0.141

0.750

-117

325

0.668

-120

3.978

0.142

0.757

-120

350

0.669

-123

3.737

0.142

0.766

-121

375

0.662

-125

3.519

0.143

9.0

0.768

-123

400

0.654

-127

3.325

0.142

8.0

0.772

-124

425

0.650

-129

3.170

0.140

7.0

0.772

-125

450

0.638

-131

3.048

0.141

6.0

0.783

-125

475

0.614

-132

2.898

0.136

6.0

0.786

-126

500

0.641

-133

2.833

0.136

5.0

0.795

-127

525

0.638

-135

2.709

0.135

5.0

0.801

-127

550

0.633

-137

2.574

0.133

4.0

0.802

-128

575

0.628

-138

2.481

0.131

5.0

0.805

-128

600

0.625

-140

2.408

0.129

5.0

0.814

-128

625

0.619

-142

2.334

0.128

5.0

0.818

-129

650

0.617

-144

2.259

0.125

6.0

0.824

-130

675

0.618

-146

2.192

0.123

7.0

0.834

-130

700

0.619

-147

2.124

0.122

8.0

0.851

-131

725

0.618

-150

2.061

0.120

9.0

0.859

-132

750

0.614

-152

1.983

0.118

0.857

-133

775

0.609

-154

1.908

0.119

0.865

-133

800

0.562

-155

1.877

0.118

0.872

-133

825

0.587

-156

1.869

0.119

0.869

-134

850

0.593

-158

1.794

0.118

0.875

-135

875

0.597

-160

1.749

0.119

0.881

-135

900

0.598

-162

1.700

0.118

0.889

-136

925

0.592

-164

1.641

0.115

0.888

-138

950

0.588

-166

1.590

0.112

0.877

-138

975

0.586

-168

1.572

0.108

0.864

-137

1000

0.590

-171

1.551

0.107

0.863

-137

The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port. The scattering parameters
were measured on the MRF134 device alono with no external components.

MOTOROLA RF DEVICE DATA

2-342

MRF134

FIGURE 17 Si 1, INPUT REFLECTION COEFFICIENT

FIGURE 18 - Si 2. REVERSE TRANSMISSION COEFFICIENT

versus FREQUENCY

VDS =28V

versus FREQUENCY

l0 =100 mA

VDS =28V

FIGURE 19- S21, FORWARD TRANSMISSION COEFFICIENT

FIGURE 20 - S22< OUTPUT REFLECTION COEFFICIENT

versus FREQUENCY

VDS =28V

lD= 100 mA

versus FREQUENCY

lD= 100 mA

VDS =28V

MOTOROLA RF DEVICE DATA

2-343

lD= 100 mA

MRF134

DESIGN CONSIDERATIONS

GAIN CONTROL

The MRF134 is a RF power N-Channel enhancement mode fieldeffect transistor (FET) designed especially for VHF power amplifier

Power output of the MRF134 may be controlled from its rated

value down to zero (negative gain) by varying the dc gate voltage.

and oscillator applications. Motorola RF MOS FETs feature a ver

This feature facilitates the design of manual gain control. AGC

tical structure with a planar design, thus avoiding the processing

difficulties associated with V-groove vertical power FETs.
Motorola Application Note AN-211A, FETs in Theory and Prac
tice, is suggested reading for those not familiar with the construc

ALC and modulation systems. (See Figure 8.)

tion and characteristics of FETs.

lar VHF transistors are suitable for MRF134. See Motorola Appli

AMPLIFIER DESIGN

Impedance matching networks similar to those used with bipo

The major advantages of RF power FETs include high gain, low

cation Note AN 721, Impedance Matching Networks Applied to

noise, simple bias systems, relative immunity from thermal run

away, and the ability to withstand severely mismatched loads

RF Power Transistors. The higher input impedance of RF MOS

without suffering damage. Power output can be varied over a

signal scattering parameters and large signal impedances are pro

wide range with a low power dc control signal, thus facilitating

manual gain control. ALC and modulation.

vided. While the s-paramters will not produce an exact design

solution for high power operation, they do yield a good first
approximation. This is an additional advantage of RF MOS power

DC BIAS

The MRF134 is an enhancement mode FET and, therefore, does

not conduct when drain voltage is applied. Drain current flows

when a positive voltage is applied to the gate. See Figure 9 for a
typical plot of drain current versus gate voltage. RF power FETs
require forward bias for optimum performance. The value of

quiescent drain current (Iqq) is not critical for many applications.

The MRF134 was characterized at Iqq 50 mA, which is the
suggested minimum value of Iqq. For special applications such

FETs helps ease the task of broadband network design. Both small

FETs.

RF power FETs are triode devices and. therefore, not unilateral.

This, coupled with the very high gain of the MRF134, yields a
device capable of self oscillation. Stability may be achieved by
techniques such as drain loading, input shunt resistive loading,
or output to input feedback. The MRF134 was characterized with
a 68-ohm input shunt loading resistor. Two port parameter sta
bility analysis with the MRF134 s-parameters provides a useful-

as linear amplification, Iqq may have to be selected to optimize

tool for selection of loading or feedback circuitry to assure stable

the critical parameters.

operation. See Motorola Application Note AN-215A for a discus

The gate is a dc open circuit and draws no current. Therefore,

the gate bias circuit may generally be just a simple resistive
divider network. Some special applications may require a more
elaborate bias system.

FIGURE 21 -

sion of two port network theory and stability.

Input resistive loading is not feasible in low noise applications.

The MRF134 noise figure data was generated in a circuit with
drain loading and a low loss input network.

150 MHz TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-344

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF136
MRF136Y

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode MOSFETs
15 W, 30 W 2-400 MHz
N-CHANNEL
MOS BROADBAND
RF POWER FETs

... designed for wideband large-signal amplifier and oscillator applications in the 2 to
400 MHz range, in either single ended or push-pull configuration.
Guaranteed 28 Volt, 150 MHz Performance
MRF136

MRF136Y

Output Power = 15 Watts

Output Power = 30 Watts

Narrowband Gain = 16 dB (Typ)

Efficiency = 60% (Typical)
Small-Signal and Large-Signal

Broadband Gain - 14 dB (Typ)

Efficiency = 54% (Typical)

Characterization
100% Tested For Load

Mismatch At All Phase

Angles With 30:1 VSWR

MRF136Y

CASE 211-07, STYLE 2

MRF136

Space Saving Package For

Push-Pull Circuit

Applications MRF136Y
Excellent Thermal Stability,
Ideally Suited For Class A
Operation

(Flange)

Facilitates Manual Gain

Control, ALC and

CASE 319B-01. STYLE 1

Modulation Techniques

MRF136Y

MAXIMUM RATINGS

Rating

Value

Symbol

Unit

MRF136

MRF136Y

Drain-Source Voltage

vdss

Vdc

Drain-Gate Voltage (Rqs = 1 Mil)

V0GR

Vdc

Adc

100

Watts

0.314

0.571

W/C

Gate-Source Voltage

vqs

Drain-Current Continuous

Total Device Dissipation (u Tc = 25C

Derate above 25C

Storage Temperature Range

Operating Junction Temperature

Vdc

2.5

Tstg

-65 to +150

200

THERMAL CHARACTERISTICS
Max

Symbol

Characteristic

Thermal Resistance, Junction to Case

Rjc

Unit

MRF136

MRF136Y

3.2

1.75

C/W

Handling and Packaging MOS dovicesare susceptibleto damage fromelectrostatic charge.Reasonable precautionsin handlingand packaging MOS
devices should be observed.

MOTOROLA RF DEVICE DATA

2-345

MRF136, MRF136Y
ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted)
Symbol

Min

Drain-Source Breakdown Voltage

(Vqs = 0, lD = 5 mA)

V(BR)DSS

Zero-Gate Voltage Drain Current

(VDS = 28 V, VGS = 0)

loss

Gate-Source Leakage Current

(Vqs = 40 V, VDS = 0)

'GSS

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS (NOTE 1)

Vdc

mAdc

/uAdc

Vdc

ON CHARACTERISTICS (NOTE 1)

Gate Threshold Voltage

VGS(th)

9fs

250

400

5.5

<VDs = 10 V, Id = 25 mA)
Forward Transconductance

mmhos

(Vds = 10 V. Id = 250 mA)

DYNAMIC CHARACTERISTICS (NOTE 1)

Input Capacitance

Ciss

(Vds = 28 V, Vqs = 0, f = 1 MHz)

Output Capacitance

Coss

pF
pF

(VDS = 28 V, Vqs = 0, f = 1 MHz)

Reverse Transfer Capacitance

Crss

(Vds = 28 V, Vqs = 0, f = 1 MHz)

FUNCTIONAL CHARACTERISTICS (NOTE 2)

Noise Figure

MRF136

Gps

(Vds = 28 Vdc, Id = 500 mA, f = 150 MHz)

Common Source Power Gain (Figure 1)

(Vdd = 28 Vdc, Pout = 15 W, f = 150 MHz,lDQ = 25 mA)

Common Source Power Gain (Figure 2)

MRF136Y

(Vdd = 28 Vdc, Pout = 30 W, f = 150 MHz,lDQ = 100 mA)

Drain Efficiency (Figure 1)

(Vdd = 28 Vdc, Pout = 15 W, f = 150 MHz,Idq =

Drain Efficiency (Figure 2)

MRF136
25 mA)
MRF136Y

(Vdd = 28 Vdc, Pout = 30 W, f = 150 MHz, IDq =

Electrical Ruggedness (Figure 1)

100 mA)
MRF136

(Vdd = 28 Vdc, P0ut = 15 W, f = 150 MHz, lDQ =

<!>

No Degradation in Output Power

<!>

No Degradation in Output Power

25 mA,

VSWR 30:1 at all Phase Angles)

Electrical Ruggedness (Figure 2)

MRF136Y

(VDd = 28 Vdc, Pout = 30 W, f = 150 MHz, lDQ =

100 mA,

VSWR 30:1 at all Phase Angles)

Notes: 1. For MRF136Y, each side measured separately.

2. For MRF136Y measured in push-pull configuration.

MOTOROLA RF DEVICE DATA

2-346

MRF136, MRF136Y

RFC2

CIO

^x=r

<VDd= +28V

'ikDI

RFC1

-i-

-wv-

|Viorv-w
CI

RF INPUT y J^i

orv-v-\_

)|-

C4^ 5^C3

tnr>r>n>

-<RF OUTPUT

:C5 _J_

OUT

*<-

C1, C2 Arco 406, 15-115 pF or Equivalent

C3 Arco 404, 8-60 pF or Equivalent
C4 43 pF Mini-Unelco or Equivalent
C5 24 pF Mini-Unelco or Equivalent
C6 680 pF, 100 Mils Chip
C7 0.01 jiF Ceramic

R1 27 11, 1 W Thin Film

C8 100 mF, 40 V
C9 0.1 /iF Ceramic
C10, C11 680 pF Feedthru

R3 10 Turns, 10 kn
R4 1.8 Ml, 1/2 W

L1 2 Turns, 0.29" ID, #18 AWG, 0.10" Long

L2 2 Turns, 0.23" ID, #18 AWG, 0.10" Long
L3 2-1/4 Turns, 0.29" ID, #18 AWG, 0.125" Long
RFC1 20 Turns, 0.30" ID, #20 AWG Enamel Closewound
RFC2 Ferroxcube VK-200 19/4B
R2 10 Ml. 1/4 W

D1 1N5925A Motorola Zener

Board Material 0.062" G10,1 oz. Cu Clad, Double Sided

Hgure 1.150 MHz Test Circuit (MRF136)

I. BIAS

Tadjust

^D1

1C11
RFC1

-0^0-<VnD= +28V

14 4 Iy
RF INPUT >
-<RFOUTPUT

CI 5 pF
C2, C3, C4, C6, C7, C9, C11 0.1 /iF Ceramic
C5, C8 680 pF Feedthru
C10 15 pF
D1 1N4740 Motorola Zener
RFC1 17 Turns, #24 AWG Wound on R5

T1 Primary Winding 3 Turns #28 Enameled Wire.

Secondary Winding 2 Turns #28 Enameled Wire.
Both windings wound through a Fair/Rite Balun 65 core.
Part #2865002402.

RFC2 Ferroxcube VK-200-19/4B or Equivalent

R1 10 Ml, 1/4 W
R2, R3 560 0, 1/2 W
R4 10 Turns. 10 Ml

R5 56 Ml, 1 W
R6 1.6 Ml, 1/4 W

T2 1:1 Transformer Wound Bifilar 2 Turns Twisted Pair

#24 Enameled Wire through a Indiana General Balun Q1

core. Part #18006-1-01. Primary winding center tapped.

Board Material 0.062" G10, 1 oz. Cu Clad, Double Sided

Rgure 2. 30-150 MHz Test Circuit (MRF136Y)

MOTOROLA RF DEVICE DATA

2-347

MRF136, MRF136Y

MRF136

/TS0 MH^

f = 100 MHz

f = 100 MHj.

200 MHz

**M50 MHz

X^OOMHz
VDD = 28V
'DC = 25 mA

200

400

600

vdd - ,J-3 v

lDQ = 25mA

800

200

400

600

BOO

1000

Pj. INPUT POWER (MIUWATTSI

Pj. INPUT POWER (MILLWATTSI

Figure 3. Output Power versus Input Power

Figure 4. Output Power versus Input Power

E
1

f == 400 Mr

^"VDO = 28V

Pin = 600mW^-*"

lDQ = KittA

-""iOOmW

-^'^OOrnW 1

-*^V| )D = '3. 5V

'OC

/,. y

Pln. INPUT POWER (WATTS)

= 25 mA

Vdd.SUPPLY VOLTAGE (VOLTS)

Rgure 6. Output Power versus Supply Voltage

Rgure 5. Output Power versus Input Power

f = 100 MHz

Pjn =900mW^<^'
21

Pin
18

-'""hx

18
mW

0.70 W

'300 TlW

-""a tow

lDQ =

25 mA

'DQ =

25 mA

Vdd.SUPPLY VOLTAGE (VOLTS)

Vfjo,SUPPLY VOLTAGE (VOLTSI

Rgure 7. Output Power versus Supply Voltage

Figure 8. Output Power versus Supply Voltage

f = 150 MHz

f = 200 MHz

MOTOROLA RF DEVICE DATA

2-348

MRF136, MRF136Y

Pin =

'dd =

|I 10

28 V

410 MHz

Pin = CONSTANT

I 8
I ,'.

~SHC

TYP CAL DEVICE

'YN. Vcsiihl

150 MHz

6
5 mA

'DQ

-8-4

3-2-1

Vqs.GATE-SOURCE VOLTAGE IVOLTS)

vdd, supply voltage ivoltsi

Figure 9. Output Power versus Supply Voltage

Figure 10. Output Power versus Gate Voltage

f = 400 MHz

MRF136

MRF136
2

1.8

16
SHOWN, Vcstthl =

1.2

0.8

I 0.6
3,0.4

-\ ^

*--

100

125

150

(Transfer Characteristics)*

Figure 12. Gate-Source Voltage versus

Case Temperature*

MRF136/MRF136Y

175

RF136Y-

TC, CASE TEMPERATURE ("CI

V
80

25 mA
v

Figure 11. Drain Current versus Gate Voltage

v \

vG S = IV
f = 1M Hz

1F13
s

SCc s

25 C

s-.

*20

*vl ss

0 2

250 mA"
\
V

VGs,GATE-SOURCE VOLTAGE IVOLTSI

500 mA

~ZL

0.2

10 , /

vds - 28 V

ID = 750mA

/
/

\ 1.4
I

; I

VDs. DRAIN-SOURCE VOLTAGE IVOLTSI

Vds,DRAIN-SOURCE VOLTAGE IVOLTSI

Figure 13. Capacitance versus Drain-Source Voltage*

Figure 14. DC Safe Operating Area

MRF136/IVIRF136Y

MRF136/MRF136Y

Data shown applies to MRF136 and each half of MRF136Y.

MOTOROLA RF DEVICE DATA

2-349

100

MRF136, MRF136Y
MRF136Y

TYPICAL PERFORMANCE IN BROADBAND TEST CIRCUIT

(Refer to Figure 2)
16
14

1501

IHi/

Vfju - <"

lDQ = 100 mA
Pout - 30W

/"&\ IHz

vnr
idq

= 28 v
= 100 mA

4
2
0

0.5

1.5

Pin, INPUT POWER (WATTS)

100

{.FREQUENCY(MHz)

Figure 15. Output Power versus Input Power

Figure 16. Power Gain versus Frequency

1
Vm

= 28 V

lDQ = 1(K)mA
BUI

Vdd - zov
- IrjQ = 100mA
_ Pjn = CONST/kNT

150 MHz/

/30MHJ

20 _ TYPICAL 0EVICE

SHOWN. Vgsmi)-

2 15
h-

I 10
0

120

100

-4-2

(.FREQUENCY (MHz)

VGS. GATE-SOURCE VOLTAGE IVOLTSI

Rgure 17. Drain Efficiency versus Frequency

Rgure 18. Output Power versus Gate Voltage

TYPICAL 400 MHz PERFORMANCE

VDD

Iqq = 100mA

TYPICAL DEVICE
SHOWN.Vgs (th)

s
a

= 3V

20
V )D = 28 V

'0Q

= 100 rnA

g 10

1.5

2.5

-3-2-1

Vqs. GATE-SOURCE VOLTAGE (VOLTS)

Pin, INPUT POWER (WATTS)

Rgure 19. Output Power versus Input Power

Rgure 20. Output Power versus Gate Voltage

f = 400 MHz

MOTOROLA RF DEVICE DATA

2-350

MRF136, MRF136Y

Figure 21. Large-Signal Series Equivalent

Input Impedance, Zjnt

Figure 22. Large-Signal Series Equivalent

Output Impedance, Zol*

MRF136

Rgure 23. Input and Output Impedance

MRF136Y

MOTOROLA RF DEVICE DATA

2-351

MRF136, MRF136Y

MRF136

Sj1

S 11

S1 2

(MHz)

ism

L4>

IS21I

l<b

2.0

0.988

-11

41.19

173

5.0

0.970

-27

40.07

0.923

-52

35.94

S3 2

I51Z
0.006

IS22

0.729

-12

164

0.014

0.720

-31

149

0.026

0714

-58

0.837

-88

27.23

129

0.040

0.690

-96

0.784

-111

20.75

117

0.046

0.684

-118

0.751

-125

16.49

108

0.048

0.680

-131

0.733

-135

13.41

103

0.050

0.679

-139

0.720

-142

11.43

0.050

0.678

-145

0.709

-147

9.871

0.050

0.679

-149

0.707

-152

8.663

0.051

0.683

-153
-155

0.706

-155

7.784

0.051

0.682

100

0.708

-157

7.008

0.051

0.680

-157

110

0.711

-159

6.435

0.051

0.681

-158
-159

120

0.714

-161

5.899

0.051

0.682

130

0.717

-163

5.439

0.052

0.684

-160

140

0.720

-164

5068

0.052

0.684

-161

150

0.723

-165

4.709

0.052

0.686

-161

160

0.727

-166

4.455

0.052

0690

-161

170

0.732

-167

4.200

0.052

0.694

-162

180

0.735

-168

3.967

0.052

0.699

-162

190

0.738

-169

3.756

0.052

0.703

-163

200

0.740

-170

3.545

0.052

0.706

-163

225

0.746

-171

3.140

0.053

0717

-163

250

0.742

-172

2.783

0.053

0.724

-163

275

0.744

-173

2.540

0.054

0.724

-163

300

0.751

-174

2323

0055

0.736

-163

325

0.757

-175

2.140

0.058

0.749

-163

350

0.760

-176

1.963

0.059

0758

-163

375

0762

-177

1 838

0.062

0768

-163

400

0.774

-179

1.696

0.065

0.783

-163

425

0775

-179

1.590

0.068

0 793

-163
-163

450

0.781

179

1.493

0.071

0 805

475

0.787

+177

1.415

0.074

0813

-164

500

0.792

+176

1.332

0.079

0 82b

-164

525

0.797

+175

1 259

0.083

0831

-164

550

0.801

175

1.185

0.088

0843

-164

575

0.810

+174

1.145

0.094

0.855

-164

600

0.816

+173

1.091

0.101

0.869

-165

625

0.818

171

1.041

0.106

0.871

-165

650

0.825

+170

0.994

0.112

0.884

-165

675

0.834

+169

0.962

0.119

0890

-165

700

0.837

+168

0.922

0.127

0.906

-166

725

0.836

+167

0.879

0.133

0.909

-167

750

0.841

+166

0.838

0.140

0.917

-167

775

0.844

+165

0.824

0.148

0933

-167

800

0.846

+163

0.785

0.154

0.941

-168

Rgure 24. Common Source Scattering Parameters

VDs = 28 V, lD = 0.5 A

MOTOROLA RF DEVICE DATA

2-352

MRF136, MRF136Y

MRF136

+my^C^Z- 11^7^+60

--X^O800MHrN\ + 30

150//

JwQy& J>^00V^A3r| OtO (00~-OMfSS ^yn\\] 1I

I 012 i on_LsMd^

21 oil [o14
1 I "

^&%ij4~L

i50\^\

/-30

\r>. /\7

-120^CJ^ -^^-&)
-90"

Rgure 26. S-|2>Reverse Transmission Coefficient

Rgure 25. S-|, Input Reflection Coefficient

versus Frequency
Vds = 28 V lD = 0.5 A

versus Frequency

Vds = 28 v

Rgure 27. S21, Forward Transmission Coefficient

versus Frequency
vDs = 28 v iD = 0.5 a

Id = 0.5 a

Rgure 28. S22. Output Reflection Coefficient

versus Frequency
vDs = 28 v iD = 0.5 a

MOTOROLA RF DEVICE DATA

2-353

MRF136, MRF136Y

DESIGN CONSIDERATIONS

The MRF136 and MRF136Y are RF power N-Channel

ulation schemes into system designs. A full range of

enhancement mode field-effect transistors (FETs)

power output control may require dc gate voltage ex

designed especially for HF and VHF power amplifier

cursions into the negative region.

applications. Motorola RF MOS FETs feature planar

design for optimum manufacturability.

AMPLIFIER DESIGN

Motorola Application Note AN211A, FETs in Theory

and Practice, is suggested reading for those not familiar

with bipolar transistors are suitable for the MRF136 and

Impedance matching networks similar to those used

with the construction and characteristics of FETs.

MRF136Y. See Motorola Application Note AN721, Imped

The major advantages of RF power FETs include high

ance Matching Networks Applied to RF Power Transis

gain, low noise, simple bias systems, relative immunity

from thermal runaway, and the ability to withstand

tors. Both small signal scattering parameters (MRF136

only) and large signal impedance parameters are pro

severely mismatched loads without suffering damage.

Power output can be varied over a wide range with a low

vided. Large signal impedances should be used for net

work designs wherever possible. While the s parameters

will not produce an exact design solution for high power

power dc control signal, thus facilitating manual gain

control, ALC and modulation.

The MRF136 and MRF136Y are enhancement mode

operation, they do yield a good first approximation. This

is particularly useful at frequencies outside those pre
sented in the large signal impedance plots.
RF power FETs are triode devices and are therefore not

FETs and, therefore, do not conduct when drain voltage

is applied without gate bias. A positive gate voltage

a device capable of self oscillation. Stability may be

DC BIAS

unilateral. This, coupled with their very high gain, yields

causes drain current to flow (see Figure 11). RF power

FETs require forward bias for optimum gain and power

output. A Class AB condition with quiescent drain current

(Idq) in the 25-100 mA range is sufficient for many ap

plications. For special requirements such as linear am

plification, Iqq may have to be adjusted to optimize the

critical parameters.

The MOS gate is a dc open circuit. Since the gate bias

achieved using techniques such as drain loading, input

shunt resistive loading, or feedback. S parameter stability
analysis can provide useful information in the selection
of loading and/or feedback to insure stable operation. The
MRF136 was characterized with a 27 ohm input shunt
loading resistor, while the MRF136Y was characterized
with a resistive feedback loop around each of its two
active devices.

circuit does not have to deliver any current to the FET, a

For further discussion of RF amplifier stability and the

simple resistive divider arrangement may sometimes

suffice for this function. Special applications may require

use of two port parameters in RF amplifier design, see

Motorola Application Note AN215A on page 6-204 in the

more elaborate gate bias systems.

RF Device Data (DL110 Rev 1).

GAIN CONTROL

LOW NOISE OPERATION

Power output of the MRF136 and MRF136Y may be

controlled from rated values down to the milliwatt region
(>20 dB reduction in power output with constant input

and noise figure may vary significantly with gate driving

Input resistive loading will degrade noise performance,

power) by varying the dc gate voltage. This feature, not

impedance. A low loss input matching network with its

gate impedance optimized for lowest noise is

available in bipolar RF power devices, facilitates the in

recommended.

corporation of manual gain control, AGC/ALC and mod

Figure 29. MRF136

Test Circuit

MOTOROLA RF DEVICE DATA

2-354

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF137

The RF MOSFET Line

30 W

N-CHANNEL ENHANCEMENT-MODE
RF POWER FIELD-EFFECT TRANSISTOR

2.0-400 MHz

N-CHANNEL MOS

BROADBAND RF POWER

. . . designed for wideband large-signal output and driver stages in

the 2.0 to 400 MHz range.

FET

Guaranteed 28 Volt, 150 MHz Performance

Output Power = 30 Watts

Minimum Gain = 13 dB

Efficiency = 60% (Typical)

Small-Signal and Large-Signal Characterization

Typical Performance at 400 MHz, 28 Vdc, 30 W
Output = 7.7 dB Gain

100% Tested for Load Mismatch at All Phase Angles

with 30:1 VSWR

Low Noise Figure 1.5 dB (Typ) at 1.0 A, 150 MHz

Excellent Thermal Stability, Ideally Suited for Class A Operation

Facilitates Manual Gain Control, ALC and Modulation Techniques

MAXIMUM RATINGS

Symbol

Value

Unit

Drain-Source Voltage

Rating

V0ss

Vdc

Drain-Gate Voltage

Vdgr

Vdc

(RGs=1.0Mn)
Gate-Source Voltage

Vqs

Vdc

Drain Current Continuous

5.0

Adc

Total Device Dissipation @ Tc = 25C

Derate above 25 C

Storage Temperature Range

Operating Junction Temperature

100

Watts

0.571

W/C

Tstg

-65 to+150

200

Thermal Resistance, Junction to Case

Symbol

R0JC

1 DIMENSIONING AND TOIERANCING PER

ANSI YI4 5M. 1982
2 CONTROLLING DIMENSION INCH
MILLIMETERS

THERMAL CHARACTERISTICS
Characteristic

r~r
NOTES

Max
1.75

INCHES

MM
2433

MAX
2614

MIN

MAX

0960

0990

9 40

990

0370

0390

DIM

582
547

713
996

0229

Unit

0215

0235

0C/W

E
H

2 16
381

266
457

0035
0.150
0004
0395

0105
0180

0281

Oil

015

Handling and Packaging MOS devices are susceptible to damage from electrostatic charge.

1004

1028

Reasonable precautions in handling and packaging MOS devices should be observed.

50*
330

0.113

0130

647

0245

0255

2057
1854

0.790

0810
0730

288

623
2007

1829

0720

CASE 211-07

MOTOROLA RF DEVICE DATA

2-355

0006
0405
50*

MRF137

ELECTRICAL CHARACTERISTICS (Tc= 25C unless otherwise noted)

Characteristic

Symbol

Min

V(BR)DSS

Typ

Unit

Max

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Vdc

(VGS = 0, Iq = 10 mA)
Zero Gate Voltage Drain Current

dss

4.0

mAdc

1.0

jiAdc

6.0

Vdc

(VDS= 28 V, VGS = 0)
Gate-Source Leakage Current

gss

<VGS=20V.VDS = 0)
ON CHARACTERISTICS

Gate Threshold Voltage

vGS(th)

1.0

3.0

Sfs

500

750

(VDs = 10 V, Id = 25 mA)
Forward Transconductance

mmhos

(Vds = 10 V, Id = 500 mA)

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

(Vds = 28 V. Vqs = 0, f = 1.0 MHz)

Output Capacitance

Coss

(VDs = 28 V. Vqs = 0. f = 1.0 MHz)

Reverse Transfer Capacitance

Crss

(Vds = 28 V. Vqs = 0, f = 1.0 MHz)

FUNCTIONAL CHARACTERISTICS

Noise Figure

1.5

(VDS = 28 Vdc. ID = 1.0 A. i = 150 MHz)

Gps

Common Source Power Gain

(VDo = 28 Vdc. Pout = 30 W.

lDQ=25mA)

f = 150 MHz (Figure 1)

f = 400 MHz (Figure 14)

7.7

Drain Efficiency (Figure 1)

(VDd = 28 Vdc. Pout = 30 W. f = 150 MHz. IDQ= 25 mA)

Electrical Ruggedness (Figure 1)

No Degradation in Output Power

(VDd = 28 Vdc, P0ut = 30 W, f = 150 MHz, lDQ = 25 mA.

VSWR 30:1 at All Phase Angles)
FIGURE 1 -

150 MHz TEST CIRCUIT

RFC2
C9

;srnnnrv-^

CI Arco 406, 15-115 pF, or equivalent

C2 Arco 403. 3.0-35 pF. or equivalent
C3 56 pF Mirti-Unleco, or equivalent
C4 Arco 404, 8.0-60 pF. or equivalent
C5 680 pF. 100 Mils Chip
C6 0.01 (iF, 100 V, Disc Ceramic
C7 100 MF.40 V
C8 0.1 ftF, 50 V, Disc Ceramic
C9, CIO 680pF Feedthru

LI
L2
L3
RFC1

<+ vDd=28 V

2 Turns. 0.29" ID, #18 AWG Enamel. Closewound

1Vi Turns, 0.2" ID. 018 AWG Enamel, Closewound
2 Turns, 0.2" ID, 018 AWG Enamel, Closewound
20 Turns. 0.30" ID, 020 AWG Enamel, Closewound

RFC2 Ferroxcube VK-200 19/4B

R1 10 Mi. Vi W Thin Film

R2 10 kn. V4W
R3 10 Turns. 10 kO
R4 1.8 kn, ttW
Board G10.62 Mils

01 1N5925A Motorola Zener

MOTOROLA RF DEVICE DATA

2-356

MRF137

FIGURE 3 -

FIGURE 2 OUTPUT POWER versus INPUT POWER

OUTPUT POWER versus INPUT POWER

1 /

f = 100 MHz/

1 = 100 MHi

,^150 MHz

ISO MHz

200 MHz

t
200 MHz

s
oc

jg 10

A
y

voo = 13 5 V
Iqq = 25 mA

voo = 28V
'00 = 25 mA

1
05

1.!

, INPUT POWER (WATTS)

P.n.INPUT POWER (WATTSI

FIGURE 6 -

FIGURE 4 OUTPUT POWER versus INPUT POWER

OUTPUT POWER versus SUPPLY VOLTAGE

f= 100 MHz

, 1 = 400 MHz

Irjg = 25 mA

P,=10W^.
40

05 W

Vfl 0=13 5V_

'DO r

0
20

8.0

Pin. INPUT POWER (WAnSI

FIGURE 6 -

25 in A

Vgo SUPPLY VOLTAGE IVOLTSI

FIGURE 7 -

OUTPUT POWER versus SUPPLY VOLTAGE

f = 200 MHz

f= 160 MHz
50

Pin = 1.5

in 0 75 W

20 W

*""'"l 5W

0.5W

fc 20

^ 0

'00 = 25

ido = ; 5

Vdd.SUPPLY VOLTAGE (VOLTS)

Vqd. supply voltage (vcltsi

MOTOROLA RF DEVICE DATA

2-357

75 W

MRF137

FIGURE 8 OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 9 -

OUTPUT POWER versus GATE VOLTAGE

f = 400 MHz
50

<?
vo D= 28V
ioo = 25 mA
"Pin = Constant"

Pin:= 8.0W

400 MHz

5 30
5.0 W

Typical Device

Shown. VGS(th) =3.0V

Z 20

/150 MHz

<DQ = 25

15.0

-9.0 -8.0

-6.0

Vdd.SUPPLY VOLTAGE (VOLTS)

FIGURE 10 - DRAIN CURRENT versus GATE VOLTAGE

(TRANSFER CHARACTERISTICS)

FIGURE 11 -

1.0 20 3.0

1.0 A
<

.Shown. Vr.s/thi = 3.0 V

Iq = 125 A

3 1.00

__ 750 mA

/
'OS = '0

GATE SOURCE VOLTAGE versus

<^\

r
2.0

-2.0

CASE TEMPERATURE

3.0

-4.0

Vqs. GATE-SOURCE VOLTAGE (V01TSI

s X

^>. 500mA

0.S6

1.0

\25 mA

Vos = 28 V

1.0

2.0

3.0

4.0

5.0

6.0

7.0

VGS. GATE-SOURCE VOLTAGE (VOLTS)

NS ^

JOmA-

N
100

125

150

175

Tc. CASE TEMPERATURE |C|

FIGURE 12 - CAPACITANCE versus

DRAIN-SOURCE VOLTAGE

FIGURE 13 -

DC SAFE OPERATING AREA

180
5.0

s = IV
f = 1.01 (Hz

160

TC= 25C -

s.N

140
120

5 20

Spa

S
s

~:::

| 1.0

100

-C;

0.5

60
40

Vv5SS,

70
0

4.0

8.0

1.0

2.0

Vqs. 0RAIN-S0URCE VOLTAGE (VOLTS)

5.0

Vds. orain-source voltage (volts)

MOTOROLA RF DEVICE DATA

2-358

100

MRF137

FIGURE 14 -

400 MHz TEST CIRCUIT

RFC2

CIO C11 C12

C13

Bias

<VDD=28V

Adjust r~-R3

Input

>lH~~zl~>H~-z2-

CI. C2. C3, C4 0-20 pF Johanson, or equivalent

C5. C8 270 pF, 100 Mil Chip
C6, C7 24 pF Mini-Unleco, or equivalent

R4 1.8 kit. '/iW

Z1 2.9" 0.166" Microstrip

Z2. Z4 0.35" 0.166" Microstrip
Z3 0.40" x 0.166" Microstrip
Z5 1.05" 0.166" Microstrip
Z6 1.9" * 0.166" Microstrip

C9 0.01 jiF, 100 V, Disc Ceramic

C10 100 MF,40 V
C11 0.1 pF. 50 V, Disc Ceramic
CI2. CI 3 -

680 pF Feedthru

RFC1 6 Turns, 0.300" ID. 20 AWG Enamel. Closewound

D1 1N5925A Motorola Zener

RFC2 Ferroxcube VK-200 19/4B

R1.R2 10kfl, V*\N

R3 10 Turns, 10kn

Board Glass Teflon. 62 Mils

FIGURE 15 - LARGE-SIGNAL SERIES EQUIVALENT INPUT AND OUTPUT IMPEDANCE. Zm. Zql*

'Zol "" Conjugate of the optimum loadimpedance

-,. /

into which the device operates at a given output

power, voltage, and frequency.

MOTOROLA RF DEVICE DATA

2-359

MRF137

FIGURE 16 -

COMMON SOURCE SCATTERING PARAMETERS

BO O SYSTEM

V0S =28 V, lD =0.75 A

S11

S21

S12

S22

(MHz)

IS-MI

<t>

IS21I

l<t>

IS12I

IS22I

Z<*

2.0

0.977

-32

59.48

163

0.011

0.661

-36

5.0

0.919

-70

48.67

142

0.024

0.692

-78

0.852

-109

33.50

122

0.032

0.747

-117

0.817

-140

19.05

106

0.037

0.768

-146

0.814

-153

13.11

0.038

0.774

-157

0.811

-159

9.88

0.038

0.782

-162

0.812

-164

7.98

0.038

0.787

-165

-168

0.813

-166

6.66

0.038

0.787

0.815

-168

5.708

0.038

0.787

-169

0.816

-170

5.003

0.038

0.787

-170

0.817

-171

4.560

0.038

0.787

-171

100

0.817

-172

4.170

0.039

0.787

-172

110

0.818

-173

3.670

0.039

0.788

-172

120

0.820

-173

3.420

0.039

0.788

I -173

130

0.821

-173

3.170

0.039

0.788 j -173

140

0.822

-174

2.980

0.039

0.788

150

0.823

-175

2.826

0.039

0.788

-173

160

0.824

-175

2.650

0.039

0.790

-174

170

0.825

-176

2.438

0.039

0.792

-174

180

0.827

-176

2.325

0.039

0.793

-174

190

0.829

-177

2.175

0.039

0.796

-174

200

0.831

-177

2.084

0.039

0 799

-174

-173

225

0.836

-178

1.824

0.039

0.805

-174

250

0.846

-178

1.621

0.039

0.816

-174

275

0.853

-179

1.462

0.039

0.822

-174

300

0.853

-179

1.319

0.040

0.833

-174

325

0.856

-179

1.194

0.040

0.828

-174

350

0.857

179

1.089

0.040

0.842

-174

375

0.861

+179

1.014

0.042

0.849

-174

400

0.865

+178

0.927

0.043

0.856

-174

425

0.875

+178

0.876

0.045

0.866

-174

450

0.881

+178

0.810

0.046

0.870

-174

475

0.886

+177

0.755

0.046

0.875

-174

500

0.887

+177

0.694

0.051

0.888

-174

525

0.888

+176

0.677

0.052

0.890

-174

550

0.896

+176

0.625

0.055

0.898

-174
-174

575

0.907

+175

0.603

0.058

0.913

600

0.910

+175

0.585

0.061

0.918

-174

625

0.910

+174

0.563

0.065

0.945

-174

650

0.920

174

0.543

0.069

0.952

-174

675

0.938

+173

0.533

0.074

0.974

-174

700

0.943

+171

0.515

0.078

0.958

-176

725

0.934

+170

0.491

0.079

0.953

-177

750

0.940

170

0.475

0.084

0.943

-177

775

0.953

+169

0.477

0.090

0.957

-177

800

0.959

+168

0.467

0.093

0.957

-179

MOTOROLA RF DEVICE DATA

2-360

MRF137

FIGURE 18 - S-12. REVERSETRANSMISSION COEFFICIENT

FIGURE 17 - S11. INPUT REFLECTION COEFFICIENT

versus FREQUENCY

V0S =28 V

Vqs =28 v

lD =0.75 A

Id =0.75 a

+t2o^r^-_

Z^T800 MH'/X
150//

\+30

Zj^sNr|bo MHzV
/^y/QOr "nO^ooMHz\
g^V*f50MHz| |

0 I 1 OS

iso\\

1MI !-\-03w

V^'SC?-

/-30

-l200^~-~-~_c_____ -~^^-<60o
-90

FIGURE 19 - S21, FORWARD TRANSMISSION COEFFICIENT

FIGURE 20 - S22. OUTPUT REFLECTION COEFFICIENT

versus FREQUENCY

v0s =28 v

vDs =28 v

Id =0.75 a

+30

-150

MOTOROLA RF DEVICE DATA

2-361

id =0.75 a

MRF137

DESIGN CONSIDERATIONS

The MRF137 is a RF power N-Channel enhancement mode field-

divider network. Some special applications may require a more

elaborate bias system.

effect transistor (FET)designed especially for VHF power amplifier

applications. Motorola RF MOS FETs feature a vertical structure

GAIN CONTROL

Power output of the MRF137 may be controlled from its rated

with a planar design, thus avoiding the processing difficulties

associated with V-groove vertical power FETs.

value down to zero (negative gain) by varying the dc gate voltage.

Motorola Application Note AN-211A, FETs in Theory and Prac

tice, is suggested reading for those not familiar with the construc

This feature facilitates the design of manual gain control,

AGC/ALC and modulation systems. (See Figure 9.)

tion and characteristics of FETs.

The major advantages of RF power FETs include high gain, low

noise, simple bias systems, relative immunity from thermal run
away, and the ability to withstand severely mismatched loads

without suffering damage. Power output can be varied over a

wide range with a low power dc control signal, thus facilitating
manual gain control, ALC and modulation.
DC BIAS

The MRF137 is an enhancement mode FET and, therefore, does

not conduct when drain voltage is applied. Drain current flows

when a positive voltage is applied to the gate. See Figure 10 for

AMPLIFIER DESIGN

Impedance matching networks similar to those used with bipo

lar VHF transistors are suitable for MRF137. See Motorola Appli

cation Note AN-721, Impedance Matching Networks Applied to

RF Power Transistors. The higher input impedance of RF MOS

FETshelps ease the task of broadband network design. Both small

signal scattering parameters and large signal impedances are pro
vided. While the s-parameters will not produce an exact design
solution for high power operation, they do yield a good first
approximation. This is an additional advantage of RF MOS power
FETs.

a typical plot of drain current versus gate voltage. RF power FETs

RF power FETs are triode devices and, therefore, not unilateral.

require forward bias for optimum performance. The value of

This, coupled with the very high gain of the MRF137, yields a
device capable of self oscillation. Stability may be achieved by
techniques such as drain loading, input shunt resistive loading,

quiescent drain current (Iqq) is not critical for many applications.

The MRF137 was characterized at Iqq = 25 mA, which is the
suggested minimum value of Iqq. For special applications such
as linear amplification, Iqq may have to be selected to optimize
the critical parameters.

The gate is a dc open circuit and draws no current. Therefore,

the gate bias circuit may generally be just a simple resistive

or output to input feedback. Two port parameter stability analysis

with the MRF137 s-parameters provides a useful tool for selection

of loading or feedback circuitry to assure stable operation. See
Motorola Application Note AN-215A for a discussion of two port
network theory and stability.

FIGURE 21-150 MHz TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-362

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF138

The RF MOSFET Line

30 W

2.0-175 MHz

N-CHANNEL MOS
LINEAR RF POWER

N-CHANNEL ENHANCEMENT-MODE
RF POWER FIELD-EFFECT TRANSISTOR

FET

... designed for power amplifier applications in industrial, commer

cial and amateur radio equipment to 175 MHz.
Superior High Order IMD
Specified 28 Volts, 30 MHz Characteristics
Output Power = 30 Wans
Power Gain = 17 dB (Typ)
Efficiency = 40% (Typ)

IMD(d3) (30 W PEP)= -30 dB (Typ)

IMD(d11) (30 W PEP)= -60 dB (Typ)

100% Tested For Load Mismatch At All Phase Angles With

30:1 VSWR

G O

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain-Source Voltage

VDss

Vdc

Drain-Gate Voltage (Rqs = 1 MH)

VDGR

Vdc

Gate-Source Voltage

VGS

Vdc

Drain Current Continuous

6.0

Adc

Total Device Dissipation @ Tq = 25C

Storage Temperature Range

2 CONTROLLING DIMENSION INCH

MIUJMETERS

Derate above 25C

Operating Junction Temperature

NOTES:
1 DIMENSIONING AND TOLERANCING PER
ANSI Y14 5M. 1382

Watts

MIN

MAX

MIN

W/C

2439
9*0

2514
990
713

0960

0.990

0370

0390

Tstg

-65 to+150

200

C
D

582
547

216

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case

INCHES

115

0.66

Symbol

Max

Unit

R0JC

1.52

C/W

381
on

10 04

288

623
2007
1829

S
U

0229

MOTOROLA RF DEVICE DATA

2-363

0281

596

0.215

0235

266

0035

0105

457

0150
0004

0006

0395

0405

015
1028
5C
3.30
647
2057
1854

0.160

40'

50*

0.113
0.245

0130
0255

0.790

0810

0720

0730

Handling and Packaging MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.

MAX

CASE 211-07

MRF138
ELECTRICAL CHARACTERISTICS (Tc=25Cunless otherwisenoted)

| Symbol

Characteristic

| Min |

Typ

| Max j~

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

(VqS = 0. Ip = 10 mA)

V(BR)DSS

Zero Gate Voltage Drain Current

'DSS

(VDs=28V,VGS = 0)
Gate-Source Leakage Current

gss

(VGS=20V,VOS = 0)

Vdc

5.0

mAdc

100

nAdc

6.0

Vdc

2.5

Vdc

ON CHARACTERISTICS

Gate Threshold Voltage

vGS(th)

(VDs=10V, lD=10mA)
Drain-Source On-Voltage
(Vgs=10V.ID = 2.5A)

1.0

VDS(on)

Forward Transconductance

9fs

3.0

0.8

1.2

mhos

(VDS=10V, lD=2.5A)
DYNAMIC CHARACTERISTICS

Input Capacitance

Cjss

VDS = 28 V, VGS = 0 V.f = 1.0 MHz)

Output Capacitance

Coss

(VDS= 28 V, Vqs = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

Crss

(VDS= 28 V, Vqs = 0, f = 1.0 MHz)

FUNCTIONAL TESTS (SSB)

Common Source Amplifier Power Gain

GpS

(VDD = 28 V. Pout = 30 W (PEP),

DO=100 mA)

(30 MHz) (Fig. 1)

(150 MHz) (Fig. 6)

Drain Efficiency (Figure 1)

(30 W PEP)

(VDd= 28 V,f = 30 MHz,IdQ= 100 mA)

(30WCW)

Intermodulation Distortion (Figure 1)

IMD(d3)
IMD(dii)

(VDd = 28 V, Poul = 30 W (PEP),

f = 30; 30.001 MHz, lDQ = 100 mA)

Load Mismatch (Figure 1)

(VDD= 28 V, Pout = 30 W (PEP), f = 30; 30.001 MHz,

-30

-60

dB
-

No Degradation in Output Power

<l>

lDQ = 100 mA, VSWR30:1 at all Phase Angles)

CLASS A PERFORMANCE

Intermodulation Distortion (1) and Power Gain

(VDD= 28 V, Pout = 10 W (PEP), f1 = 30 MHz,

f2 = 30.001 MHz,l0Q=10A)

GPS

IMD{d3)
IMD(d9-i3)

-50
-70

(1) To MIL-STD-1311 Version A. Test Method 2204B. Two Tone. Reference Each Tone.

FIGURE 1 2-60 MHz BROADBAND TEST CIRCUIT

^-L

Bias + >

28 V

Output

CI 2 Arco 406 Variable

LI VK200 20/4B Ferrite Choke or Equivalent (3.0 uH)

L2 Ferrite Bead(s). 2.0 pH
CI, C2, C3, C4, C5, C6 0.1 <iFCeramic Chip or Equivalent
C7 10 MF. 100 V Electrolytic
C8 10 pF Dipped Mica
C9 68 pF Dipped Mica
CIO, C11 47 pF Dipped Mica

R1, R2 200 0.1 /2 W Carbon

R3 - 2.2 n, 1/2 W Carbon
R4 330 0,1.0 W Carbon

T1 4:1 Impedance Transformer

T2 1:4 Impedance Transformer

MOTOROLA RF DEVICE DATA

2-364

MRF138

FIGURE 2 POWER GAIN versus FREQUENCY

FIGURE 3 -

15 20

OUTPUT POWER versus INPUT POWER

-40

150 MHz

lDQ = 100 mA
Pout= 30W (PEP)

1 10

Vqq= 28 V. Igo = 100 mA

| 60

3 40

30 MHz

5.0

y
0

2.d

0
3

7.G

200

too

1.0

FIGURE B -

FIGURE 4 - IMD versus Pout

-."30
a

1.S

Pin.INPUT POWER (WATTS)

f. FREQUENCY (MHz)

COMMON SOURCE UNITY CURRENT

GAIN FREQUENCY versus DRAIN CURRENT

2000

1-40

1800

| 1600
*6

150 MHz

S 1400

-50

Vrjs =28 V, IgQ =100 mA, Tone Separation 1.0 kHz

1000

1 800

o-30r

600

]L 400

'OS = 20 V

/
//

1200

Vqs = 10 V

/
r

200
0

i b

lO. DRAIN CURRENT (AMPS)

Pout- OUTPUT POWER (WATTS PEP)

FIGURE 6-160 MHz TEST CIRCUIT

O +28 Vdc

RF Output

C1 91 pF Unelco Type MCM 01/010

C2, C4 0.1 jiF Erie Red Cap
C3 Allen Bradley 680 pF Feed Thru
C5 1.0 pF, SO Vdc Electrolytic

RFC1 VK200 21/4B

C6 Arco 402 Varible

T1 4:1 Transformer, 1.75*

C7 Arco 404 Variable

L2 4Turns* 18 AWG. 5/16'ID

R1 = 1.0 Ohm, 1/4 W Carbon
R2 2000 Ohm, 1/4 W Carbon

Subminiature Coaxial Cable

LI 2 Turns tt 18 AWG, 6/16* ID

MOTOROLA RF DEVICE DATA

2-365

T1 4:1 Impedance Ratio

Transformer, Line

Impedance = 25(1

MRF138

FIGURE 7 -

GATE VOLTAGE versus DRAIN CURRENT

FIGURE 8 -

DC SAFE OPERATING AREA

s
\

iM
1 u

N,^

= 25

2= 1.0

0.8

0.6

/,'

S(M

vr s= 10 V

= 1.2 mhos

0.2
0

1.0

6 4:
}0
50
6 fl
8 6
VGs. GATE-SOURCE VOLTAGE IVOLTSI

FIGURE 9 -

1.0

50 70

2(5

V0S. DRAIN-SOURCE VOLTAGE (V0LTSI

LARGE-SIGNAL SERIES EQUIVALENT

INPUT/OUTPUT IMPEDANCE. Zint. ZOL"

MOTOROLA RF DEVICE DATA

2-366

100

MRF138

RF POWER MOSFET CONSIDERATIONS

MOSFET CAPACITANCES

DRAIN CHARACTERISTICS

The physical structure of a MOSFET results in capac

itors between the terminals. The metal oxide gate struc

the full-oncondition. Thison-resistance, VoS(on)- occurs

ture determinesthe capacitorsfromgate-to-drain (Cgrj),

andgate-to-source (CgS). The PN junction formed dur

One figure of merit for a FET is its static resistance in

in the linear region of the output characteristic and is
specified under specific test conditions for gate-source

ing the fabrication of the RF MOSFET results in a junc

voltage and drain current. For MOSFETs, VQS(on) has a

tion capacitance from drain-to-source (Cfjs).

positive temperature coefficient and constitutes an

important design consideration at high temperatures
because it contributes to the power dissipation within

These capacitances are characterized as input (Cjss),

output (Coss) and reverse transfer (Crss) capacitances
on data sheets. The relationships between the interterminal capacita nces and those given on data sheets are
shown below. The Cjss can be specified in two ways:

the device.

GATE CHARACTERISTICS

The gate of the RF MOSFET is a polysilicon material,

and is electrically isolated from the source by a layer of
oxide. The input resistance is very high on the order

1. Drain shorted to source and positive voltage at the

gate.

2. Positive voltage of the drain in respect to source a nd

zero volts at the gate. In the latter case the numbers
are lower. However, neither method represents the
actual operating conditions in RF applications.

of 1C)9 ohms resulting in a leakage current of a few

nanoamperes.

Gate control is achieved by applying a positive voltage

slightly in excess of the gate-to-source threshold

voltage, VQS(th)Gate Voltage Rating Never exceed the gate voltage

rating. Exceeding the rated Vqs can result in permanent
damage to the oxide layer in the gate region.
Gate Termination The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the devices due to voltage build-up
on the input capacitor due to leakage currents or pickup.
LINEARITY AND GAIN CHARACTERISTICS

In addition to the typical IMD and power gain data

presented,- Figure 5 may give the designer additional

information on the capabilities of this device. The graph
represents the small signal unity current gain frequency

Gate Protection These devices do not have an

internal monolithic zener diode from gate-to-source. If

gate protection is required, an external zener diode is
recommended.

at a given drain current level. This is equivalent to fr for

bipolar transistors. Since this test is performed at a fast
sweep speed, heating of the device does not occur. Thus,
in normal use, the higher temperatures may degrade
these characteristics to some extent.

EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY

Collector

Drain

Emitter

Source

Base

Gate

V(BR)CES

v(BR)0SS

lC
'CES
>EBO

ID
'DSS
'GSS

vBE(on)
vCE(sat)

VQS(th)
Vos(on)

Qb
cob

Cj68
cojs

"fa

D
, vCE(sst)
"CE(S8t>
[-j

VDSlon)
'DS(on,= f*j

MOTOROLA RF DEVICE DATA

2-367

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF140

The RF MOSFET Line

150W

2.0-150 MHz

N-CHANNEL MOS
LINEAR RF POWER

N-CHANNEL ENHANCEMENT-MODE
RF POWER FIELD-EFFECT TRANSISTOR

FET

. .. designed primarily for linear large-signal output stages in the

2-150 MHz frequency range.
Specified 28 Volts, 30 MHz Characteristics
Output Power = 150 Watts

Power Gain = 15 dB (Typ)

Efficiency = 40% (Typ)
Superior High Order IMO

IMD(d3)(150WPEP)=-30dBTyp
IMD(d11) (150 W PEP)= -60 dB Typ
100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR

G O

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain Source Voltage

VDSS

Vdc

Drain Gate Voltage

Vdgo

Vdc
Vdc

Gate Source Voltage

vqs

Drain Current Continuous

Adc

Total Device Dissipation @ Tc = 25C

300

Watts

1.7

W/C

Derate above 25C

Storage Temperature Range

Operating Junction Temperature

Tstg

-65 to +150

200

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

SEATING PLANE
STYLE 2:
PIN 1. SOURCE
2. GATE
3. SOURCE
4. DRAIN
MILLIMETERS

OIM

MAX

MIN

MAX

24.38

25.15

0.990

B
C
0
E
F

11.81
5 82

12.95
6.98

5.46
2.13
0.08
18.29

2.79
0.18
18.54

0.S60
0.465
0.229
0.216
0.084

G
K

Symbol

RfljC

Max

0.6

Unit
C/W

Handling and Packaging MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should ba observed.

MOTOROLA RF DEVICE DATA

2-368

INCHES

MIN

L
M

N
Q

11.05

5,97

6.22
6.48
45 NOM
4.52
3.66
2.92
3.30

0.003
0.720
0.435
0.246
45
0.144
0.115

CASE 211-11

0.510
0.275
0.235
0.1 to
0.007
0.730
-

0.255
NOM
0.178
0.130

MRF140

ELECTRICAL CHARACTERISTICS (Tc= 25C unless otherwise noted)

Symbol |

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

V(BR)DSS

Vdc

(VGS = 0. ID= 100 mA)

] Zero Gate Voltage Drain Current

toss

5.0

mAdc

1.0

iAdc

5.0

Vdc

1.5

Vdc

(VDS = 28 Vdc. VGS = 0)

I Gate-Body Leakage Current

'GSS

J (VGS =20Vdc, Vqs =0)

ON CHARACTERISTICS

Gate Threshold Voltage

vGS(th)

3.0

1.0

(Vqs = 10 V,ID = 100 mA)

vDS(on)

Drain-Source On-Voltage

4.0

(V<;s= 10 V. ID= JOAdc)

Forward Transconducta nee

9fs

mhos

(VOS= 10V.ID = 5.0A)

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

450

100

(Vds =28 v. vqs =o, f = 1 o mhzj

Output Capacitance

Coss

(vDs = 28 v, vGS =o, f = 1.o MHz)

Reverse Transfer Capacitance

Crss

(VDS= 28 V, VGS = 0, f = 1.0 MHz)

FUNCTIONAL TESTS (SSB)

Common Source Amplifier Power Gain

Gps

(30 MHz)

6.0

Orain Efficiency

(VDd = 28 V, Pou, = 150 W (PEP), lDQ = 250 mA) (150 MHz)

(VDd = 28 V, Pou, = 150 W (PEP), f = 30; 30.001 MHz.

ID IMax) = 6.5 A)

IMD(d3,
IMD(d11)

Intermodulation Distortion (1)

(Vdd = 28 V. Pout = 150 W (PEP), f1 = 30 MHz.

f2 = 30.001 MHz, lDQ. = 250 mA)

-30

-60

dB
-

Load Mismatch

(VDd = 28 V. Pou, = 150 W (PEP), f = 30; 30.001 MHz,

lDQ= 250 mA, VSWR30:1 at all Phase Angles)

No Degradation n Output Power

(t) To Mll-STO-1311 Version A. Test Method 2204B. Two Tone. Reference Each Tone.

FIGURE 1 -

30 MHz TEST CIRCUIT (CLASS AB)

"JT^t

C8/-p->
C4

R1,

--^;aW|^

^ ^cTo^
>

Output

CI 820 pF Dipped Mica

C2. C5, C6, C7, C8, C9 0.1 pF Ceramic Chip or
Monolythic with Short Leads

L1 VK200/4B Ferrite Choke or Equivalent. 3.0 pH

L2 Ferrite Bead(8), 2.0 pH

C3 Arco 469

R31.On/1.0 W Carbon

C4 560 pF Unencapsutated Mica or Dipped Mica

T1 16:1 Broadband Transformer

R1, R2 51(1/1.0 W Carbon

T2 1:25 Broadband Transformer

with Short Leads

CIO 10 fiF/100 V Electrolytic

MOTOROLA RF DEVICE DATA

2-369

MRF140

FIGURE 2 POWER GAIN versus FREQUENCY

FIGURE 3 - OUTPUT POWER versus INPUT POWER

160

| 80
g 40
5

Vqo = 28 V. IDQ = 250 mA

5> 10

'on = 2 8'
l00 - 250 mA

s.o

n
j .0

160

of 120

Poul = 'BO W(P EP|

1 Mill 1

Mill 1
5 0

40
0

100

2.0

200

f. FREQUENCY (MHt)

3.0

4.0

5.0

Pjn.INPUT POWER (WATTS)

FIGURE g - COMMON SOURCE UNITY GAIN

FREQUENCY versus DRAIN CURRENT

FIGURE 4 - IMD versus Pout

1UUU

5-30

1-35
3 -40
3

800

~**l

-45

Vdd= 28 V. Idq = 250 mA.

Tons Separation =1.0 kHz

= 20V-

400

3 -30

VDS = itnr*

-35

^.200

-40
-45

-SO

100

120

140

180

Pout- OUTPUT POWER (WATTS PEP)

FIGURE 6 GATE VOLTAGE versus

DRAIN CURRENT

80
o.

6.0

a 40

VtJ 5= 10 V
Of* = 6.0rnhos

In, DRAIN CURRENT (AMPS)

2.0

0
2.0

4.0

6.0

8.0

VGS. GATE-SOURCE VOLTAGE IVOLTSI

MOTOROLA RF DEVICE DATA

2-370

MRF140

FIGURE 7 SERIES EQUIVALENT IMPEDANCE

Z0= 10Ohms;
vdd =28 v
u Idq = 250 mA
POU, = 150W?EP-

Zql* = Conjugate oltheoptimum loadimpedance

into which the device output operates at a

givenoutputpower, voltageandfrequency.
Gate Shunted by 25 Ohms.

FIGURE 8 -

150 MHz TEST CIRCUIT (CLASS AB)

RFC2

<+28 Vdc

-4{-^d) RF Output
RF Input

C5 1.0 pF, 15 WV Tantalum

L|
L2
L3
L4

C6 150 pF Unelco J101

RFC1 5.6 pH Molded Choke

C7 25 pF Unelco J101

RFC2 VK200-4B

C9 Arco 262 or equivalent

CIO 0.05 pF Ceramic

R1, R2 150 a

C1. C2. C8 Arco 463 or equivalent

C3 25 pF Unelco
C4 0.1 jiF Ceramic

C11 15 iF, 35 WV Electrolytic

MOTOROLA RF DEVICE DATA

2-371

3/4- #18 AWG into Hairpin

Printed Line, 0.200" * 0.500"
7/8" #16 AWG into Hairpin
2 Turns #16 AWG, 5/16 ID

1.0 W Carbon

MRF140

RF POWER MOSFET CONSIDERATIONS

MOSFET CAPACITANCES

DRAIN CHARACTERISTICS

The physical structure of a MOSFET results in capac

itors between the terminals. The metal oxide gate struc

thefull-on condition. This on-resistance, Vogjon)- occurs

One figure of merit for a FET is its static resistance in

turedetermines thecapacitors from gate-to-drain (Cgfj),

in the linear region of the output characteristic and is

and gate-tosource(Cgs). The PN junction formed dur

specified under specific test conditions for gate-source

ing the fabrication of the RF MOSFET results in a junc

voltage and draincurrent. For MOSFETs, Vos(onjhas a

tion capacitance from drain-to-source (Cfjs).

These capacitances are characterized as input (Cjss),

positive temperature coefficient and constitutes an

output (Coss) and reverse transfer (Crss) capacitances

important design consideration at high temperatures,

because it contributes to the power dissipation within

on data sheets. The relationships between the inter-

the device.

terminal capacitances and those given on data sheets are

shown below. The Cjss can be specified in two ways:

GATE CHARACTERISTICS

1. Drain shorted to source and positive voltage at the

The gate of the RF MOSFET is a polysilicon material,

and is electrically isolated from the source by a layer of
oxide. The input resistance is very high on the order

gate.

2. Positive voltage of the drain in respect to source and

of 109 ohms resulting in a leakage current of a few

zero volts at the gate. In the latter case the numbers

nanoamperes.

are lower. However, neither method represents the

actual operating conditions in RF applications.

Gate control is achieved by applying a positive voltage

slightly in excess of the gate-to-source threshold

Cgd
Gate

voltage, VQS(th)Gate Voltage Rating Never exceed the gate voltage

rating. Exceeding the rated Vqs can result in permanent

Drain

V
=F-cds

CiSS = Cgd +CgS

coss = Cgd +C(JS
crss = CgjJ

damage to the oxide layer in the gate region.

Gate Termination The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the devices due to voltage build-up
on the input capacitor due to leakage currents or pickup.

LINEARITY AND GAIN CHARACTERISTICS

In addition to the typical IMO and power gain data

presented. Figure 5 may give the designer additional
information on the capabilities of this device. The graph
represents the small signal unity current gain frequency
at a given drain current level. This is equivalent to fr 'of
bipolar transistors. Since this test is performed at a fast

Gate Protection These devices do not have an inter

nal monolithic zener diode from gate-to-source.

gate protection is required, an external zener diode is

recommended.

sweep speed, heating of the device does not occur. Thus,

in normal use, the higher temperatures may degrade

these characteristics to some extent.

EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY

Collector

Drain

Emitter

Source

Base

Gate

V(BR)CES

V(BR)DSS

VCBO
'C
"CES
'EBO

vDGO
'D
"DSS
'GSS

vBE(on)
vCE(sat)

VGS(th)
Vos(on)

Cjb
Cob

Cjss
Coss
Sfs

hfe

VCE(sat)
RCE(satl =-ic~"

VDS(on)

rDS{on>= ~~io~~

MOTOROLA RF DEVICE DATA

2-372

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA
The RF MOSFET Line

MRF141

RF Power Field-Effect Transistor

N-Channel Enhancement-Mode MOSFET
... designed for broadband commercial and military applications at frequencies to

150 W, 28 V, 175 MHz

175MHz. The high power, high gain and broadband performance of this device makes
possible solid state transmitters for FM broadcast or TVchannel frequency bands.

N-CHANNEL
BROADBAND
RF POWER MOSFET

Guaranteed Performance at 30 MHz, 28 V:

Output Power 150 W

Gain 18 dB (22 dB Typ)

Efficiency 40%

Typical Performance at 175 MHz, 50 V:

Output Power 150 W

Gain 13 dB
Low Thermal Resistance

Ruggedness Tested at Rated Output Power

Nitride Passivated Die for Enhanced Reliability
CASE 211-11, STYLE 2

MAXIMUM RATINGS

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Vdc

Drain-Gate Voltage

vdgo

Vdc

vqs

Vdc

Adc

300

Watts

1.71

W/C

Tstg

-65 to +150

200

Symbol

Max

Unit

RflJC

0.6

C/W

Rating

Gate-Source Voltage
Drain Current Continuous

Total Device Dissipation (w Jq = 25C

Derate above 25C

Storage Temperature Range

Operating Junction Temperature
THERMAL CHARACTERISTICS

Characteristic

J Thermal Resistance, Junction to Case

NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

MOTOROLA RF DEVICE DATA

2-373

MRF141

ELECTRICAL CHARACTERISTICS (Tc = 25C unlessotherwise noted)

Characteristic

Symbol

Min

Drain-Source Breakdown Voltage

(Vqs = 0, Id = 100 mA)

V(BR)DSS

Zero Gate Voltage Drain Current

IDSS

Typ

Max

Unit

OFF CHARACTERISTICS (Note 1)

IVDS = 28 V, VGs = 0)
Gate-Body Leakage Current
(Vqs = 20 v, vDS = >

<GSS

Vdc

mAdc

/xAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage (Vds = 10 V, Id = 100 mA)

VGS(th)

Drain-Source On-Voltage (Vqs = 10 V, Id = 10 A)

vDS(on)

Forward Transconductance (Vds = 10 V. Id = 5 A)

9fs

Vdc

mhos

DYNAMIC CHARACTERISTICS (Note 1)

Input Capacitance (Vds = 28 V,Vqs = 0, f = 1 MHz)

Ciss

Output Capacitance (Vds = 28 V,Vqs = 0, f = 1 MHz)

Coss

Reverse Transfer Capacitance (Vds = 28 V,Vqs = 0, f = 1 MHz)

Crss

350

420
40

pF
pF

FUNCTIONAL TESTS

Common Source Amplifier Power Gain, f = 30; 30.001 MHz

Gps

(V0D = 28 V, Pout = 150 W (PEP).IDQ = 250 mA)

dB
16

f = 175 MHz

Drain Efficiency

(Vdd = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,

lDQ = 250 mA, lD (Max) = 5.95 A)
Intermodulation Distortion (1)

(VDD = 28 V, Pout = 150 W (PEP), fl = 30 MHz,

IMD(d3)
IMD,dH)

f2 = 30.001 MHz, Idq = 250 mA)

Load Mismatch

-30

-28

-60

</<

(VDD = 28 V, Pou, = 150 W (PEP), f = 30; 30.001 MHz,

lDQ = 250 mA, VSWR 30:1 at all Phase Angles)

No Degradation in Output Power

CLASS A PERFORMANCE

Intermodulation Distortion (1) and Power Gain

GPS

(VDD = 28 V, Pout = 50 W (PEP), f1 = 30 MHz.

IMD(d3,
IMD(d9_i3)

f2 = 30.001 MHz, lDQ = 4 A)

-50

-75

(1) To MIL-STD-1311 Version A. Test Method 2204B. Two Tone. Reference Each Tone.

-J.C8ou xr^r
-
C1

j-<

28 V

OUTPUT

?R2

CI 820 pF Dipped Mica

LI VK2004B Ferrite Choke or Equivalent. 3 pH

L2 Ferrite Bead(s). 2 pH

C2. C5. C6. C7. C8. C9 0.1 pF Ceramic Chip or

Monolythic with Short Leads

R1.R2 51 il 1 W Carbon

C3 Arco 469

R3 1 11 1 W Carbon

C4 560 pF Unencapsulated Mica or Dipped Mica

T1 16:1 Broadband Transformer

with Short Leads

T2 1:25 Broadband Transformer

C10 10 pF 100 V Electrolytic

Board Material 0.062" Fiberglass IG10I.

1 oz. Copper Clad. 2 Sides, <r
5

Figure 1. 30 MHz Test Circuit

MOTOROLA RF DEVICE DATA

2-374

MRF141

TYPICAL CHARACTERISTICS

1.04

UX)t11

1.03
1.02

'0 = 5AL=>

1 01

1.00
0.99

0.98

JJA

0.97

0.96
5
~
":

CSs>2A

0.94

1A""

0.93

Tc = 25C

0.5A-"

0.92

0.25 A\

0.91

non

100

TC, CASE TEMPERATURE (XI

Vqs. DRAINTO-SOURCE VOLTAGE (VOLTS)

Figure 2. DC Safe Operating Area

Figure 3. Gate-Source Voltage versus

Case Temperature

2000

VD<; - 2CV
.

^J/DS = 10 V

'^ISS"1

/a / '

E 1000

O200

'/
f

If
0

=^_

Vds. DRAIN-SOURCE VOLTAGE (VOLTS)

Iq. DRAIN CURRENT (AMPSI

Figure 4. Common Source Unity Gain Frequency

Figure 5. Capacitance versus Drain-Source Voltage

versus Drain Current

f = 175 MHz

Vq[) = 28V
'do

-- VDD - 2 X\l
'DO = 250mA
poul = 1 jUW
VDD = 28V
'DC
10

too

f. FREQUENCY (MH2)

Pin. INPUT POWER IWATTS)

Figure 6. Power Gain versus Frequency

Figure 7. Output Power versus Input Power

MOTOROLA RF DEVICE DATA

2-375

MRF141

TYPICAL CHARACTERISTICS

280

f = 175 MHz

1 = 30 MHz

240

Idq = 250mA

|200

Iqq - 250mA

Pm = 4W

^Ss

2 160

Pin = 20W

---'
1W^

fc 120

^14W

^8W

^L
12

18
20
22
SUPPLYVOLTAGE IVOLTSI

Figure 10. Input and Output Impedances

, d5

o
i

45
.

Vdd = 28V.f = 30MHz. TONE SEPARATION = 1kHz

*
0

Figure 9. Output Power versus Supply Voltage

Figure 8. Output Power versus Supply Voltage

SUPPLYVOLTAGE(VOLTSI

'DQ = 500 mA
60

100

120

140

160

Pout. OUTPUT POWER IWATTSI

Rgure 11. IMD versus Pout (PEP)

MOTOROLA RF DEVICE DATA

2-376

180

200

MRF141

RF POWER MOSFET CONSIDERATIONS

GATE CHARACTERISTICS

MOSFET CAPACITANCES

The gate of the MOS FtT is a polysilicon material, and

is electrically isolated from the source by a layer of oxide.

The physical structure of a MOSFET results in capaci

tors between the terminals. The metal anode gate struc

ture determines the capacitors from gate-to-drain (Cgd),

and gate-to-source(Cgs). The PNjunctionformed during

The input resistance is very highon the order of 10^

the fabrication of the MOS FET results in a junction capac

nanoamperes.

itance from drain-to-source (Cfjs).

These capacitances are characterized as input (Cjss),
output (C0ss)and reverse transfer (Crss) capacitances on

slightly in excess of the gate-to-source threshold voltage,

VGS(th)-

ohms resulting in a leakage current of a few

Gate control is achieved by applying a positive voltage

Gate Voltage Rating Never exceed the gate voltage

rating. Exceeding the rated Vqs can result in permanent
damage to the oxide layer in the gate region.
Gate Termination The gate of this device is essen
tially capacitor. Circuits that leave the gate open-circuited
or floating should be avoided. These conditions can result
in turn-on of the device due to voltage build-up on the
input capacitor due to leakage currents or pickup.

data sheets. The relationships between the inter-terminal

capacitances and those given on data sheets are shown

below. The Cjss can be specified in two ways:

1. Drain shorted to source and positive voltage at the
gate.

2. Positive voltage of the drain in respect to source and

zero volts at the gate. In the latter case the numbers
are lower. However, neither method represents the
actual operating conditions in RF applications.

GATE

-i-Cds

Gate ProtectionThis device does not have an internal

monolithic zener diode from gate-to-source gate protec

tion is required, an external zener diode is recommended.

Using a resistor to keep the gate-to-source impedance
low also helps damp transients and serves another
important function. Voltage transients on the drain can
be coupled to the gate through the parasitic gate-drain
capacitance. Ifthe gate-to-source impedance and the rate
of voltage change on the drain are both high, then the

Ciss ~ Cgd - CgS

Coss = CgrJ = Cfjs

signal coupled to the gate may be large enough to exceed

the gate-threshold voltage and turn the device on.
HANDLING CONSIDERATIONS

LINEARITY AND GAIN CHARACTERISTICS

In addition to the typical IMD and power gain data

presented. Figure 4 may give the designer additional
information on the capabilities of this device. The graph
represents the small signal unity current gain frequency
at a given drain current level. This is equivalent to fy for
bipolar transistors. Since this test is performed at a fast
sweep speed, heating of the device does not occur. Thus,
in normal use, the higher temperatures may degrade
these characteristics to some extent.

When shipping, the devices should be transported only

in antistatic bags or conductive foam. Upon removal from
the packaging, careful handling procedures should be
adhered to. Those handling the devices should wear
grounding straps and devices not in the antistatic pack
aging should be kept in metal tote bins. MOSFETs should
be handled by the case and not by the leads, and when
testing the device, all leads should make good electrical
contact before voltage is applied. As a final note, when
placing the FET into the system it is designed for, sol
dering should be done with a grounded iron.
DESIGN CONSIDERATIONS

The MRF141 is an RF Power, MOS, N-channel enhance

DRAIN CHARACTERISTICS

One figure of merit for a FET is its static resistance in

the full-on condition. This on-resistance, Vos(on)- occurs

in the linear region of the output characteristic and is
specified under specific test conditions for gate-source

voltage and drain current. For MOSFETs, Vos(on) nas a

positive temperature coefficient and constitutes an
important design consideration at high temperatures,
because it contributes to the power dissipation within the
device.

ment mode field-effect transistor (FET) designed for HF

and VHF power amplifier applications.
Motorola Application Note AN-211A, FETs in Theory
and Practice, is suggested reading for those not familiar
with the construction and characteristics of FETs.

The major advantages of RF power MOSFETs include

high gain, low noise, simple bias systems, relative immu
nity from thermal runaway, and the ability to withstand
severely mismatched loads without suffering damage.
Power output can be varied over a wide range with a low
power dc control signal.

MOTOROLA RF DEVICE DATA

2-377

MRF141

DC BIAS

The MRF141 is an enhancement mode FET and, there

The gate is a dc open circuit and draws no current.

fore, does not conduct when drain voltage is applied.

Drain current flows when a positive voltage is applied to
the gate. RF power FETs require forward bias for opti

Therefore, the gate bias circuit may be just a simple resis

tive divider network. Some applications may require a

mum performance. The value of quiescent drain current

(lDQ) 's nt critical for many applications. The MRF141
was characterized at Iqq = 250 mA, each side, which is

GAIN CONTROL

the suggested minimum value of Iqq. For special appli

cations such as linear amplification. IrjQ may have to be

its rated value down to zero (negative gain) by varying

the dc gate voltage. This feature facilitates the design of

selected to optimize the critical parameters.

manual gain control, AGC/ALC and modulation systems.

more elaborate bias system.

Power output of the MRF141 may be controlled from

MOTOROLA RF DEVICE DATA

2-378

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

The RF MOSFET Line

MRF141G

RF Power Field-Effect Transistor

N-Channel Enhancement-Mode MOSFET
... designed for broadband commercial and military applications at frequencies to
175 MHz.The high power, high gain and broadband performance of this device makes

300 W, 28 V, 175 MHz

N-CHANNEL

possible solid state transmitters for FM broadcast or TV channel frequency bands.

BROADBAND
RF POWER MOSFET

Guaranteed Performance at 175 MHz, 28 V:

Output Power 300 W

Gain 12 dB (14dB Typ)
Efficiency 50%

Low Thermal Resistance 0.35C/W

Ruggedness Tested at Rated Output Power

Nitride Passivated Die for Enhanced Reliability
GO-

OS
GO-

(Flange)

MAXIMUM RATINGS

Rating

Drain-Source Voltage
Drain-Gate Voltage

Gate-Source Voltage
Drain Current Continuous

l Total Device Dissipation (a Tc = 25C

Derate above 2SC

[ Storage Temperature Range

Operating Junction Temperature

CASE 375-01, STYLE 2

Symbol

Value

Unit

VqsS

Vdc

vdgo

Vdc

vqs

*40

Vdc

Adc

500

Watts

2.85

wye

Tstg

-65 to +150

200

Symbol

Max

Unit

RflJC

0.35

c/w

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

MOTOROLA RF DEVICE DATA

2-379

MRF141G

ELECTRICAL CHARACTERISTICS (Tc = 2SC unless otherwise noted)

Characteristic

Symbol

Min

Drain-Source Breakdown Voltage

(Vqs = 0, Id = 100 mA)

V(BR)DSS

Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0)

loss

mAdc

Gate-Body Leakage Current

(Vqs = 20 v, vDs = )

<GSS

AiAdc

Vdc

Typ

Max

Unit

OFF CHARACTERISTICS (Note 1)

Vdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage (Vds = 10 V,Id = 100 mA)

VGS(th)

Drain-Source On-Voltage (Vqs = 10 V,Id = 10 A)

VDS(on)

ForwardTransconductance (Vds = 10 V,Id = 5 A)

Sfs

5 | Vdc

mhos

DYNAMIC CHARACTERISTICS (Note 1)

Input Capacitance (Vds = 28 V,Vqs = 0, f = 1 MHz)

Qss

Output Capacitance (Vds = 28 V,Vqs = 0, f = 1 MHz)

C0ss

Reverse Transfer Capacitance (Vds = 28 V,Vqs = 0, f = 1 MHz)

crss

350
420

pF
pF
pF

FUNCTIONAL TESTS (Note 2)

Common Source Amplifier Power Gain

(VDd = 28 V,Pout = 300 W, lDQ = 500 mA, f = 175 MHz)

Gps

Drain Efficiency

(Vdd = 28 V,Pout = 300 W, f = 175 MHz, lD (Max) = 21.4 A)

Load Mismatch

<t>

(VDD = 28 V, Pout = 300 W, lDQ = 500 mA, f = 175 MHz,

No Degradation in Output Power

VSWR 5:1 at all Phase Angles)

Notes: 1. Each side measured separately.
2. Measured in push-pull configuration.

"TLYlY
Rt 100 Ohm. 1/2 W

T1 9:1 RF Transformer. Can be made of 15-18 Ohm

R2 1 kOhm. 1/2 W
CIArco 402. 1.5-20 pF
C2 Arco 406. 15-115 pF

T2 1:9 RF Transformer. Can be made of 15-18 Ohm

C3. C4. C8. C9. C10 1000 pF Chip

CS. C110.1 pf Chip
CS 330 pF Chip
C7 200 pF and 180 pF Chip* in Parallel
C12 0.47 pF Ceramic Chip, Kernel 1215 or Equivalent

Board Material 0 062" Fiberglass (G10).

1 or Copper Clad, 2 Sides. <f
5

C13 Arco 403. 3-35 pF

NOTE: For stability, the input transformer T1 must be loaded

L1 10 Turnt AWG #16 Enameled Wire.

Close Wound, 1/4" I.O.

L2 Ferrite Beads of Suitable Material for

1.5-2 *iH Total Inductance

Semirigid Co-Ax, 62-90 Mils O.D.

Semirigid Co-Ax. 90-100 Mils O.O.

with ferrite toroids or beads to increase the common

modo inductance. For operation below 100 MHz. The

same is required for tho output transformer
See pictures for construction details.

Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or Equivalent.

Rgure 1.175 MHz Test Circuit

MOTOROLA RF DEVICE DATA

2-380

MRF141G

TYPICAL CHARACTERISTICS

too

g 1.03

'0 = >A^

3 102
1 1.01

1.00
2 0.99

S 093

.JIA

3 0.96

^>V2A

0.95
8 0.94

1A^

g 0.93

TC = 25C

0.5A-'

w 0.92

100

0.25A\

3 0.91

I
0

-25

100

Tc,CASE TEMPERATURE CO

Vds,drain-to-source voltage ivoltsi

NOTE: Data shown applies to each half of MRF141G.

Hgure 2. DC Safe Operating Area

Hgure 3. Gate-Source Voltage versus

Case Temperature

2000

coss

Vn<; = 2C V-

^j/qs = 1(?v

1000
z

/.*

Ciss-

200

'/
h
If
f

z
3

vds. drain-source voltage ivoltsi

lD, DRAIN CURRENT (AMPS)

NOTE: Data shown applies to each half of MRF141G.

Hgure 4. Common Source Unity Gain Frequency

Hgure 5. Capacitance versus Drain-Source Voltage

versus Drain Current

Pin = 30W^-

1 = 175 M <z

tz 300

|
CC

S-.

'DO =

250mAx2

O-^20W^

250

^---<10W

5
s

fc 150

vdd = ^ IV
IrjQ = 2 x 250mA
P0u, = 300W

5 100

I IIIII
10

f. FREQUENCY IMHil

SUPPLYVOLTAGE (VOLTS)

Figure 6. Power Gain versus Frequency

Hgure 7. Output Power versus Supply Voltage

MOTOROLA RF DEVICE DATA

2-381

MRF141G

TYPICAL CHARACTERISTICS

Zql* = Conjugate of theoptimum load impedance

intowhichthe deviceoutputoperatesat a
givenoutputpower, voltageandfrequency.

Hgure 8. Input and Output Impedances

RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES

LINEARITY AND GAIN CHARACTERISTICS

The physical structure of a MOSFET results in capaci

tors between the terminals. The metal anode gate struc

In addition to the typical IMD and power gain data

presented. Figure 4 may give the designer additional
information on the capabilities of this device. The graph
represents the small signal unity current gain frequency

ture determines the capacitors from gate-to-drain(Cgrj),

and gate-to-source (CgS). The PN junction formed during
the fabrication of the MOS FET results in a junction capac

itance from drain-to-source (C(js).

These capacitances are characterized as input (Cjss),
output (Coss) and reverse transfer (Crss) capacitances on

at a given drain current level. This is equivalent to fj for

bipolar transistors. Since this test is performed at a fast
sweep speed, heating of the device does not occur. Thus,
in normal use, the higher temperatures may degrade

data sheets. The relationships between the inter-terminal

capacitances and those given on data sheets are shown

these characteristics to some extent.

below. The Cjss can be specified in two ways:

1. Drain shorted to source and positive voltage at the

DRAIN CHARACTERISTICS

One figure of merit for a FET is its static resistance in

the full-on condition. This on-resistance, Vps(on)<occurs

gate.

2. Positive voltage of the drain in respect to source and

zero volts at the gate. In the latter case the numbers
are lower. However, neither method represents the
actual operating conditions in RF applications.

in the linear region of the output characteristic and is

specified under specific test conditions for gate-source

voltage and drain current. For MOSFETs,VDSlon) nas a

positive temperature coefficient and constitutes an
important design consideration at high temperatures,
because it contributes to the power dissipation within the
device.
GATE CHARACTERISTICS

C(JS

GATE

The gate of the MOS FET is a polysilicon material, and

is electrically isolated from the source by a layer of oxide.

ciss = Cgd = Cgs

C0SS = Cgd = C(JS
^rss = Cgd

The input resistance is very high on the order of 10^

ohms resulting in a leakage current of a few
nanoamperes.

Gate control is achieved by applying a positive voltage

slightly in excess of the gate-to-source threshold voltage,

vGS(th)-

SOURCE

Gate Voltage Rating Never exceed the gate voltage

rating. Exceeding the rated Vqs can result in permanent
damage to the oxide layer in the gate region.

MOTOROLA RF DEVICE DATA

2-382

MRF141G

Gate Termination The gate of this device is essen

tially capacitor. Circuits that leave the gate open-circuited
or floating should be avoided. These conditions can result
in turn-on of the device due to voltage build-up on the
input capacitor due to leakage currents or pickup.
Gate ProtectionThis device does not have an internal

monolithic zener diode from gate-to-source gate protec

tion is required, an external zener diode is recommended.
Using a resistor to keep the gate-to-source impedance
low also helps damp transients and serves another
important function. Voltage transients on the drain can
be coupled to the gate through the parasitic gate-drain
capacitance. If the gate-to-source impedance and the rate
of voltage change on the drain are both high, then the
signal coupled to the gate may be large enough to exceed
the gate-threshold voltage and turn the device on.
HANDLING CONSIDERATIONS

When shipping, the devices should be transported only

Motorola Application Note AN-211A, FETs in Theory

and Practice, is suggested reading for those not familiar
with the construction and characteristics of FETs.

The major advantages of RF power MOSFETs include

The MRF141G is an enhancement mode FET and, there

fore, does not conduct when drain voltage is applied.
Drain current flows when a positive voltage is applied to
the gate. RF power FETs require forward bias for opti
mum performance. The value of quiescent drain current
dDQ) is not critical for many applications. The MRF141G
was characterized at Iqq = 250 mA, each side, which is

the suggested minimum value of Iqq. For special appli

cations such as linear amplification. Iqq may have to be
selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current.
Therefore, the gate bias circuit may be just a simple resis
tive divider network. Some applications may require a
more elaborate bias system.

placing the FET into the system it is designed for, sol

dering should be done with a grounded iron.

GAIN CONTROL

DESIGN CONSIDERATIONS

its rated value down to zero (negative gain) by varying

Power output of the MRF141G may be controlled from

The MRF141G is an RF Power, MOS, N-channel

enhancement mode field-effect transistor (FET)designed

for HF and VHFpower amplifier applications.

the dc gate voltage. This feature facilitates the design of

manual gain control, AGC/ALCand modulation systems.

MOTOROLA RF DEVICE DATA

2-383

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF148

The RF MOSFET Line

30 W

2.0-176 MHz

N-CHANNEL MOS
LINEAR RF POWER

N-CHANNEL ENHANCEMENT-MODE
RF POWER FIELD-EFFECT TRANSISTOR

FET

. ..designed for power amplifier applications in industrial, commer

cial and amateur radio equipment to 175 MHz.

Superior High Order IMD

Specified 50 Volts. 30 MHz Characteristics

Output Power = 30 Watts

Power Gain = 18 dB (Typ)

Efficiency = 40% (Typ)

IMD(d3) (30 W PEP)= -35 dB (Typ)

'MD(dl 1) (30 W PEP)= -60 dB (Typ)

100% Tested For Load Mismatch At All Phase Angles With

30:1 VSWR

MAXIMUM RATINGS

Symbol

Value

Unit

Drain Source Voltage

Rating

VDSS

120

Vdc

Drain Gate Voltage

VDGO

120

Vdc

vqs

Vdc

Gate Source Voltage

Drain Current Continuous

6.0

Adc

Total Device Dissipation @ Tfj = 25C

116

Watts

0.66

W/C

Tstg

-65 to +150

200

Derate above 25C

Storage Temperature Range

Operating Junction Temperature

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Symbol

RflJC

Max
1.52

Unit
C/W

Handling and Packaging MOS devices are susceptible to damago from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.

MOTOROLA RF DEVICE DATA

2-384

NOTES

1 DIMENSIONING AND TOUftANONG f*R

ANSI Y14 5M. 1982.
2 CONTROLLING DIMENSION INCH
INCHES

2439

miuw ETERS
MIN
MAX
2514

0960

0990

940

0370

0390

582

713

0229

547

596

0215

0235

216

266

0065

0105

990

MAX

0281

381

457
015

Oil
1004

0150
0004

0180

1028

0395

0405

40"

so*

40*

a
R

28a

0113

0130

623

330
647

0245

200?

2057

0790

0255
08t0

1829

18.54

0720

0730

CASE 211-07

0006
50*

MRF148
ELECTRICAL CHARACTERISTICS (Tc= 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

(Vqs = 0, Iq = 10 mA)

V(BR)DSS

Zero Gate Voltage Drain Current

(VOS= 50V.VGS = 0.)

dss

Gate-Body Leakage Current

igss

(VGs=20V,V0S = 0)

125

Vdc

1.0

mAdc

100

nAdc

5.0

Vdc

5.0

Vdc

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 V, lD = 10 mA)

vGS(th)

Drain-Source On-Voltage
(VGS = 10V.ID = 2.5A)

VDS(on)

Forward Transconductance

8fs

1.0

0.8

3.0

1.2

mhos

(VDS=10V, lD=2.5A)
DYNAMIC CHARACTERISTICS

Input Capacitance

ciss

(VDs = 50 V, Vqs = 0 V,f = 1.0 MHz)

Output Capacitance

Coss

(VDS= 50 V. VGS = 0. t = 1.0 MHz)

Reverse Transfer Capacitance

CrSs

(VDS= 50 V, VGS = 0, f = 1.0 MHz)

8.0

PF
PF
PF

FUNCTIONAL TESTS (SSB)

Common Source Amplifier Power Gain

(30 MHz)
(Vdd = 50 V, Pout = 30 W (PEP), Idq = lOO mA) (175 MHz)
Drain Efficiency

Gps

(30 W PEP)

(VDd= 50 V.f = 30 MHz. Idq = 100 mA)

(30 W CW)

IMD(d3)
IMD(d11)

Intermodulation Distortion

. (v0D = 50 v. pout = 30 w (pepj,

1=30; 30.001 MHz, Idq = 100 mA)

-35
-

-60

dB
-

Load Mismatch

(VDd = 50 V, Pout = 30 W (PEP),f = 30; 30.001 MHz,

lDQ = 100 mA. VSWR 30:1 at all Phase Angles)

No Degradation in Output Power

CLASS A PERFORMANCE

Intermodulation Distortion (1) and Power Gain

(vDd = 50 v. pout = io w <pep>. f1 = 30 MHz,

f2 = 30.001 MHz.Idq = 1.0 A)

Gps

IMD(d3)

-50

IMP(d9-13)

-70

(1) To MtL-STD-1311 Version A. Test Method 2204B. Two Tone. Reference Each Tone.

FIGURE 1 -

Bias

2-60 MHz BROADBAND TEST CIRCUIT

0-10 V -

C1, C2, C3, C4, C5, C6 0.1 pf Ceramic Chip or Equivalent

C7 10 mF. 100 V Electrolytic
C8 100 pF Dipped Mica
LI VK200 20/4B Ferrite Choke or Equivalent (3.0 pH)
L2 Ferrite Bead(s), 2.0 pH

R1.R2 200 0,1/2 W Carbon

R3 4.7 0,1 /2 W Carbon

R4 470 a LOW Carbon

T1 4:1 Impedance Transformer
T2 1:2 Impedance Transformer

MOTOROLA RF DEVICE DATA

2-385

MRF148

FIGURE 2 -

FIGURE 3 OUTPUT POWER versus INPUT POWER

POWER GAIN versus FREQUENCY

V00 = 50 V20

40 V

vnn = sov
>0Q = 100 mA
P0Ul = 30 W (PEP)

0
5.0

100

0.5

200

1.0

1.5

2.0

Pin. INPUT POWER (WATTS)

f. FREQUENCY (MHl)

FIGURE 5 -

FIGURE 4 - IMD versus Pout

COMMON SOURCE UNITY GAIN

FREQUENCY versus DRAIN CURRENT

VDS = 30V
15

vos =15 V^

Vqd= SO V. Iqq = 100 mA. TONE SEPARATION 1.0kHt

^ -40

<15

-50()

1.0

2.0

Iq. DRAIN CURRENT (AMPS)

Pout. OUTPUT POWER (WATTS PEP)

FIGURE 6 -

150 MHz TEST CIRCUIT

O +50 Vdc
0-6

RF Output

CI 91 pF Unelco Type MCM 01 /010

C2, C4 O.I pF Erie Red Cap

C3 Allen Bradley 680 pF Feed Thru
C5 1.0 pF, 50 Vdc Electrolytic
C6 15 pF Unelco Type JIOI
C7 24 pF Unelco Type MCM 01/010

L2 4 Turns # 18 AWG. 5/16" ID

R1 = 1.0 Ohm, 1 /4 W Carbon
R2 2000 Ohm, 1 /4 W Carbon
RFC1 VK200 21 /4B

T1 4:1 Transformer, 1.75"

Subminiature Coaxial Cable

LI 2 Turns # 18 AWG. 5/16' ID

MOTOROLA RF DEVICE DATA

2-386

i-i.son
.12.5(1

T1 4:1 Impedance Ratio

Transformer, Line

Impedance = 25 0

MRF148

FIGURE 7 -

GATE VOLTAGE versus DRAIN CURRENT

/
/

5
<

| 10
a

/
0

3.0

/
50

TC='25C

1 1.0

/
60

S. 2.0

/
/

.Si.

/
/

r
f

1.0

FIGURE 8 - DC SAFE OPERATING AREA (SOA)

fill

vos = 10 V
g|s = 1.2 mho

8.0

n i

i .2

0.4

0.7 1.0

VGS. GATE-SOURCE VOLTAGE (VOLTS)

2 3

7 0 10

2 1

VDS. DRAIN-SOURCE VOLTAGE (VOLTS)

FIGURE 9 - IMPEDANCE COORDINATES - 50-OHM

CHARACTERISTIC IMPEDANCE

Zol" = Conjugate ol the optimun loadimpedance

into whichthe device oulpul operates al a
givenoulpul power,vollageand frequency.

MOTOROLA RF DEVICE DATA

2-387

7 ) 100 2C

MRF148

RF POWER MOSFET CONSIDERATIONS

MOSFET CAPACITANCES

DRAIN CHARACTERISTICS

The physical structure of a MOSFET results in capac

itors between the terminals. The metal oxide gate struc

the full-on condition. Thison-resistance, VoS(on). occurs

turedetermines the capacitors from gate-to-drain (Cgd),

and gate-to source (Cgs). ThePN junction formed dur

in the linear region of the output characteristic and is

specified under specific test conditions for gate-source

ing the fabrication of the RF MOSFET results in a junc

tion capacitance from drain-to-source (CdS).
These capacitances are characterized as input (Cjss),
output (C0ss) and reverse transfer (Crss) capacitances

voltage and drain current. For MOSFETs, V[)S(on) has a

on data sheets. The relationships between the interterminal capacitances and those given on data sheets are

the device.

shown below. The CjSScan be specified in two ways:

GATE CHARACTERISTICS

One figure of merit for a FET is its static resistance in

positive temperature coefficient and constitutes an

important design consideration at high temperatures,

because it contributes to the power dissipation within

The gate of the RF MOSFET is a polysilicon material,

and is electrically isolated from the source by a layer of
oxide. The input resistance is very high on the order

1. Drain shorted to source and positive voltage at the

gate.

2. Positive voltage of the drain in respect to source and

zero volts at the gate. In the latter case the numbers
are lower. However, neither method represents the
actual operating conditions in RF applications.

of 1fj9 ohms resulting in a leakage current of a few

nanoamperes.

Gate control is achieved by applying a positive voltage

slightly in excess of the gate-to-source threshold

voltage, VQS(th)Cgd

Gate Voltage Rating Never exceed the gate voltage

Drain

rating. Exceeding the rated Vqs can result in permanent

Gate

;Cds

ciss = Cgd +CgS

coss = Cgd +Cds
Crss = Cgd

damage to the oxide layer in the gate region.

Source

LINEARITY AND GAIN CHARACTERISTICS

Gate Protection These devices do not have an inter

nal monolithic zener diode from gate-to-source.

If
gate protection is required, an external zener diode is

In addition to the typical IMD and power gain data

presented. Figure 5 may give the designer additional

information on the capabilities of this device. The graph
represents the small signal unity current gain frequency
at a given drain current level. This is equivalent to fr for
bipolar transistors. Since this test is performed at a fast

recommended.

sweep speed, heating of the device does not occur. Thus,

in normal use, the higher temperatures may degrade
these characteristics to some extent.

EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY

Collector
Emitter
Base

Drain
Source
Gate

V(BR)CES

V(BR)DSS

VcBO
lC
CES

vDGO
"D
'DSS

lEBO

RCE(sat)

'GSS

VBE(on)

VGS(th)

vCE(sat)

VDSIon)

Cjb
C0b

Cjss
C0ss

hf0

Bfs

. VCBsat)

'DS(on)-

MOTOROLA RF DEVICE DATA

2-388

vDS(on)
<D

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF150

The RF MOSFET Line

150W

N-CHANNEL ENHANCEMENT-MODE
RF POWER FIELD-EFFECT TRANSISTOR
. .. designed primarily for linear large-signal output stages in the

N-CHANNEL MOS
LINEAR RF POWER

2-175 MHz frequency range.

2.0-175 MHz

FET

Specified 50 Volts, 30 MHz Characteristics

Output Power = 150 Watts

Power Gain = 17 dB (Typ)

Efficiency = 45% (Typ)
Superior High Order IMD

IMD(d3) (150 W PEP) = -32 dB (Typ)

IMD(di i) (150 W PEP)= -60 dB (Typ)
100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR

STYLE 2
PIN I
2
3
4.

SOURCE
GATE
SOURCE
DRAIN

MAXIMUM RATINGS

Rating

Symbol

Value

Drain Source Voltage

Vqss

125

Vdc

Drain Gate Voltage

vDG0

125

Vdc

vqs

Vdc

Gate Source Voltage

Drain Current Continuous

Totat Device Dissipation @ Tq =25C

Adc

300

Watts

1.71

W/C

Derate above 25 C

Storage Temperature Range

Operating Junction Temperature

Unit

33
r~r
NOTES:

1 DIMENSIONING AND TOIERANCING PER

Tstg

-65 to +150

200

ANSI Y145M. 1982

2 CONTROLLING DIMENSION INCH

MIN

1295

2439
1182
582

549

596

214

279
4 52
017

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Symbol
R0JC

J Max
0.6

Unit
C/W

Handling and Packaging MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.

MOUMETERS
MAX
2514

DIM

J
K
M
Q

366

693

008
1105
45' NOM

2.93

625

330
647

1829

1854

INCHES
MIN 1 MAX
0960
0990
0465
0510
0229
0275
0216
0235
0034
0144

0003

0435

2-389

45' NOM
0.115

0130

0246

0.255

0720

0730 1

CASE 211-11

MOTOROLA RF DEVICE DATA

0110
0.178
0007

MRF150

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted)

Characteristic

Symbol

| Min |

V(BR)DSS

125

Typ

Unit

Max

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Vdc

|Vgs = 0. Id = 100 mA)

Zero Gate Vottage Drain Current

dss

5.0

mAdc

1.0

pAdc

5.0

Vdc

5.0

Vdc

(Vqs = so v. vGS =0)

Gate-Body Leakage Current

igss

(VGS = 20V,VDS = 0)
ON CHARACTERISTICS
1.0

vGS(th)

Gate Threshold Voltage

3.0

(V0s= 10 V, lD= 100 mA)

Drain-Source On-Voltage

vDS(on)

VGS=10V.ID = 10A)
Forward Transconductance

5.0

4.0

9fs

mhos

(VDS=10V.ID = 5.0A(
DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

350

(Vqs = 50 V, Vqs =0 V, I = 1.0 MHz)

Output Capacitance

Coss

250

(Vqs = 50 V. Vqs = 0. f = 1.0 MHz)

Crss

Reverse Transfer Capacitance

(VDs = 50 V. Vqs = 0. f = 1.0 MHz)

FUNCTIONALTESTS (SSB)

Gps

Common Source Amplifier Power Gain

(VDD = 50 V. Pout = 150 W (PEP). IDQ = 250 mA)

8.0

Drain Efficiency

(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,

lD (Max) = 3.75 A)

IMD(d3)

Intermodulation Distortion (1)

(VDD = 50 V. Pou, = 150 W (PEP).(1 = 30 MHz.

-32

IMD(d11)

-60

dB
-

12 = 30.001 MHz. IDQ = 250 mA)

Load Mismatch

(VDD = 50 V, Pout = 150 W (PEP),f = 30; 30.001 MHz.

Iqq = 250 mA.VSWR30:1 at all Phase Angles)

No Degradation in Output Power

CLASS A PERFORMANCE

Intermodulation Distortion (1) and Power Gain

(VDd = 50 V. Pou, = 50 W (PEP), f1 = 30 MHz,

f2 = 30.001 MHz, lDQ = 3.0 A)

Gps

IMD(d3)
IMD(d9-l3)

-50

dB
-

-75

(1) To MIL-STD-1311 Version A. Tost Method 2204B. Two Tone. Reference Each Tone.
FIGURE 1-30 MHz TEST CIRCUIT (CLASS AB)

Bias +^
0-12 V ->I

lit

a-v C9

^ttrOj- -1.* J>

^
RF

Input

PIP-

-HO)

Oulpul

a/*" i^^r
T

^--^ C3 |

CI 470 pF Dipped Mica

C2, C5, C6, C7. C8, C9 0.1 fiF Ceramic Chip or
Monolythic with Short Leads
C3 200 pF Unencapsulated Mica or Dipped Mica

CIO10mF/100V Electrolytic
LI VK2CO/4B Fenite Choke or Equivalent, 3.0 pH
L2 Ferrite Bead(s). 2.0 fiH
R1.R2 510/1.0 W Carbon

R3 3.3 n/1.0 W Carbon (or 2*6Jfl/1/2W in Parallel

with Short Leads

C4 15 pF Unencapsulated Mica or Dipped Mica

with Short Leads

CIO

T1 9:1 Broadband Transformer

T2 1:9 Broadband Transformer

MOTOROLA RF DEVICE DATA

2-390

MRF150

FIGURE 2 -

POWER GAIN versus FREQUENCY

FIGURE 3 -

OUTPUT POWER versus INPUT POWER

- vDd= 50 V
'00 = 250 mA

5 to

| 250

pout = 150W (PEP)

I 200

vDD =so v _

J ,50
100

40 V
50
0
2.0

5.0

100

200

f. FREQUENCY (MHz)

1
5.0

4.0

Pin. INPUT POWER (WATTS)

FIGURE S - COMMON SOURCE UNITY GAIN

FREQUENCY versus DRAIN CURRENT

FIGURE 4 - IMD versus Pout

-30

IUUU

jo -35

*-"*"

150 M It

g-40

|-45

-50

1 800
>-

Vqo =50 V.Iqq =250 mA.TONE SEPARATION = 1.0kHz

400

=. 200

100

120

140

$=15^

160

/;
/

P0ul. OUTPUT POWER (WATTS PEP)

GATE VOLTAGE versus

DRAIN CURRENT
10

to
a.

8.0
"

S
<

i 6
oc

3
u

ID. DRAIN CURRENT (AMPS)

FIGURE 6 -

4.0

<
oc

a
CO

vos

" 2.0

= 10 V

Bls:" 5.0 mhos

2.0

4.0

6.0

8.0

Vqs-GATE-SOURCE VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-391

vds= 30v

MRF150

FIGURE 7 -

SERIES EQUIVALENT IMPEDANCE

NOTE Gale Shunlcd By 25 Ohms.

FIGURE 8 -

150 MHz TEST CIRCUIT (CLASS AB)

RFC2

< -50 Vdc

Bias )

vvv

0-12 V

RF Output

Input (&#-

C1. C2. C8 Arco 463 or equivalent

C3 25 pF Unelco

D1 1N5347 Zener Diode

C4 0.1 pF Ceramic
C5 1,0/iF. 15 WV Tantalum
C6 250 pF Unelco J101
C7 25 pF Unelco J101

L1 3/4" #18 AWG into Hairpin

L2 Printed Line. 0.200' * 0.500"
L3 TW16AWG into Hairpin
L.4 2Turnsfl16 AWG. 5/16 ID

C9 Arco 262 or equivalent

RFC1 5.6 j,H Choke

CIO 0.05 pF Ceramic

C11 15/jF. 60 WV Electrolytic

R1. R2 '150H. LOW Carbon

RFC2 VK2O0-4B

MOTOROLA RF DEVICE DATA

2-392

MRF150

RF POWER MOSFET CONSIDERATIONS

MOSFET CAPACITANCES

DRAIN CHARACTERISTICS

The physical structure of a MOSFET results in capac

itors between the terminals. The metal oxide gate struc

thefull-on condition. Thison-resistance, VQS(on). occurs

One figure of merit for a FET is its static resistance in

turedetermines thecapacitors from gate-to-drain (Cgd),

and gate-tosource (Cgs). The PN junction formeddur

in the linear region of the output characteristic and is

specified under specific test conditions for gate-source

ing the fabrication of the RF MOSFET results in a junc

tion capacitance from drain-to-source (C<js).

voltage and drain current. ForMOSFETs, VoS(on) has a

positive temperature coefficient and constitutes an

These capacitances are characterized as input (Cjss),

output (Coss) and reverse transfer (Crss) capacitances
on data sheets. The relationships between the interterminal capacitances and those given on data sheets are
shown below. The Cjss can be specified in two ways:

1. Drain shorted to source and positive voltage at the

gate.

2. Positive voltage of the drain in respect to source and

important design consideration at high temperatures,

because it contributes to the power dissipation within
the device.

GATE CHARACTERISTICS

The gate of the RF MOSFET is a polysilicon material,

and is electrically isolated from the source by a layer of
oxide. The input resistance is very high on the order

zero volts at the gate. In the latter case the numbers

of 109ohms resulting in a leakagecurrent of a few

are lower. However, neither method represents the

nanoamperes.

Gate control is achieved by applying a positive voltage

actual operating conditions in RF applications.

slightly in excess of the gate-to-source threshold

voltage, VQS(th)Gate Voltage Rating Never exceed the gate voltage

Drain

Gate

V
Cds

rating. Exceeding the rated Vqs can result in permanent

damage to the oxide layer in the gate region.
Gate Termination The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the devices due to voltage build-up

C|SS = Cgd +CgS

COSS = Cgd +Cds
crss = Cgd

on the input capacitor due to leakage currents or pickup.

LINEARITY AND GAIN CHARACTERISTICS

Gate Protection These devices do not have an inter

In addition to the typical IMD and power gain data

presented. Figure 5 may give the designer additional
information on the capabilities of this device. The graph

nal monolithic zener diode from gate-to-source.

recommended.

represents the small signal unity current gain frequency

at a given drain current level. This is equivalent to fr for
bipolar transistors. Since this test is performed at a fast
sweep speed, heating of the device does not occur. Thus,
in normal use, the higher temperatures may degrade
these characteristics to some extent.

EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY

Collector

Drain
Source
Gate

Emitter
Base

V(BR)CES

V(BR)DSS

vCBO

VDGO

'C
'CES

ID
'DSS
'GSS

'EBO

vBE(on)
vCE(sat)

VGS(th)
VDS(on)

Cib
Cob

Cjss
C0Ss
flfs

hfe

RCE(sat>

. vCE(sat)

VDS(on)

~iT~

'DS(on)=J3

MOTOROLA RF DEVICE DATA

2-393

gate protection is required, an external zener diode is

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

The RF MOSFET Line

MRF151

RF Power Field-Effect Transistor

N-Channel Enhancement-Mode MOSFET
... designed for broadband commercial and military applications at frequencies to
175 MHz. The high power, high gain and broadband performance of this device makes

150 W. 50 V. 175 MHz

N-CHANNEL

possible solid state transmitters for FM broadcast or TV channel frequency bands.

BROADBAND
RF POWER MOSFET

Guaranteed Performance at 30 MHz, 50 V:

Output Power 150 W

Gain 18dB (22 dB Typ)
Efficiency 40%

Typical Performance at 175 MHz, 50 V:

Output Power 150 W

Gain 13 dB
Low Thermal Resistance

Ruggedness Tested at Rated Output Power

Nitride Passivated Die for Enhanced Reliability

MAXIMUM RATINGS

Symbol

Value

Unit

Drain-Source Voltage

Vqss

125

Vdc

Drain-Gate Voltage

Vogo

125

Vdc

vqs

Vdc

Rating

Gate-Source Voltage
Drain Current Continuous

Total Device Dissipation ( Tc = 25C

Adc

300

Watts

1.71

W/C

Tstg

-65 to +150

200

Symbol

Max

Unit

ReJC

0.6

c/w

Derate above 25C

Storage Temperature Range

Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

MOTOROLA RF DEVICE DATA

2-394

MRF151

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwisenoted)

Symbol

Min

Drain-Source Breakdown Voltage

(Vqs = 0, Iq = 100 mA)

V(BR)DSS

125

Zero Gate Voltage Drain Current

(VDS = 50 V, Vqs = 0)

'DSS

Gate-Body Leakage Current

(VGS = 20 V, VDS = 0)

>GSS

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS
Vdc

mAdc

jiAdc

Vdc

ON CHARACTERISTICS

Gate Threshold Voltage (Vqs = 10 V, Iq = 100 mA)

vGS(th)

Drain-Source On-Voltage {Vqs = 10 V, Iq = 10 A)

vDS(on)

Forward Transconductance (Vqs = 10 V, Id = 5 A)

9fs

Vdc

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance (Vqs = 50 V,Vqs = 0, f = 1 MHz)

C'iss

Output Capacitance {Vqs = 50 V, Vqs = 0. f = 1 MHz)

Coss

Reverse Transfer Capacitance (Vqs = 50 V,Vqs = 0, f = 1 MHz)

Crss

350

225
20

FUNCTIONAL TESTS

Common Source Amplifier Power Gain, f = 30; 30.001 MHz

Gps

IVDD = 50 V, Pout = 150 W (PEP), Idq = 250 mA)

dB
18

f = 175 MHz

Drain Efficiency

(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,

ID (Max) = 3.75 A)
Intermodulation Distortion (1)

(VDD = 50 V, Pout = 150 W (PEP), f1 = 30 MHz,

IMD(d3)

f2 = 30X01 MHz, Idq = 250 mA)

IMD(d11)

Load Mismatch

-32

-30

-60

(Vdd = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,

lDQ = 250 mA, VSWR 30:1 at all Phase Angles)

No Degradation in Output Power

CLASS A PERFORMANCE

Intermodulation Distortion (1) and Power Gain

(vDd = 50 v, pout = so w (pep>, n = 30 mhz,

f2 = 30.001 MHz, lDQ = 3 A)

GPS

IMD(d3)
IMD(d9-i3)

-50

-75

(1) To MIL-STD-1311 Version A, Tost Method 2204B, Two Tone. Reference Each Tone.

BIAS +>

0-12 V->_^
OUTPUT
RF
INPUT

f^\

.R3

T3i<LrfHh

f 1 I

CI 470 pF Dipped Mica

C2. C5. C6. C7. C8. C9 0.1 pF Ceramic Chip or

C10 10 /iF/100 V Electrolytic

LI VK200 4B Ferrite Choke or Equivalent. 3 pH
L2 Ferrite Beadls). 2 pH

Monolythic with Short Leads

C3 200 pF Unencapsulated Mica or Dipped Mica

R1. R2 51 IM W Carbon

with Short Leads

R3 3.3 IK1 W Carbon (or 2 x 6.8 I! V; W in Parallel)

C4 15 pF Unencapsulated Mica or Dipped Mica

T1 9:1 Broadband Transformer

T2 1:9 Broadband Transformer

with Short Leads

Board Material 0.062" Fiberglass (G10),

1 oz. Copper Clad. 2 Sides. r - 5

Figure 1. 30 MHz Test Circuit

MOTOROLA RF DEVICE DATA

2-395

MRF151

< +50Vdc

BIAS

vw-

0-12 V

C4^r

;:C5

L1
nnnr,

-I*

I RF OUTPUT

RFC1

?C1
^

'
sR2 V\

01 1N5347 Zener Diode

C1, C2, C8 Arco 463 or equivalent

C3 25 pF Unelco
C4 0.1 pF Ceramic
C5 1 pF. 16 WV Tantalum
C6 250 pF Unelco J101
C7 25 mF Unelco J101
C9 Arco 262 or equivalent
CIO 0.05 pF Ceramic
C11 15 pF. 60 WV Electrolytic

LI 3/4" #18 AWG into Hairpin

L2 Printed Line. 0.200" x 0.500"
L3 1" #16 AWG into Hairpin
L4 2 Turns #16 AWG. 5'16 ID

RFC1 5.6 pH Choice

RFC2 VK200-4B

R1. R2 150 11. 1 W Carbon

Board Material 0.062" Fiberglass IG10).

1 oz. Copper Clad. 2 Sides. r = 5

Figure 2. 175 MHz Test Circuit

TYPICAL CHARACTERISTICS

_ 1.04

1000

500

<_>

2 100

<_>

g 1.02

"cis$

I 1.01

"FT
58

gO.99

^
<*
^~

g 0.98

S 1.03 '*-> s^
- ^v

F^
-^
[\

= 5A

.-"

0.97

-2A-

S 0.96

1 095

S1A

K> 0.94

0.93

Crss

"-0.92
to v**

i?0.91

100 mA\K0.mA\

0.90

Tc.CASE TEMPERATURE |C)

vds DRAIN-SOURCE VOLTAGE (VOLTS)

Figure 4. Gate-Source Voltage versus

Figure3. Capacitance versus Drain-SourceVoltage

Case Temperature

MOTOROLA RF DEVICE DATA

2-396

MRF151

TYPICAL CHARACTERISTICS

2000

100

Vo* =- 30V

V_Vrr -

,cu

s
1000

run :s;^
N,

TC = J5C
1

1
20

ID. DRAIN current iaupsi

vds, drain-to-source voltage woltsi

Rgure 5. DC Safe Operating Area

Rgure 6. Common Source Unity Gain Frequency

versus Drain Current

300

|
vdd = 50V.

100

-40V.

'do

I
10

VjX) = 50V
>Dq = 250rrlA
pcttrt = 150V

50J/^

rtH7100

III
5

V DD =

^.200

100

1 = 30 Mm*

,/ ^'

'DO

Rgure 7. Power Gain versus Frequency

Rgure 8. Output Power versus Input Power

1
4

Pj, INPUT POWER (WATTS)

f, FREQUENCY (MHz)

-05.

'DO

Vdd = 50V.I = 30MHz.TONE SEPARATION = 1kHz

dK
"&,

'OQ
.

100

120

140

160

Pout, OUTPUT POWER (WATTS PEPI

Rgure 9. IMD versus Pout

MOTOROLA RF DEVICE DATA

2-397

MRF151

TYPICAL CHARACTERISTICS

te Shunted (

Figure 10. Series Equivalent Impedance

RF POWER MOSFET CONSIDERATIONS
LINEARITY AND GAIN CHARACTERISTICS

MOSFET CAPACITANCES

The physical structure of a MOSFET results in capaci

tors between the terminals. The metal anode gate struc

ture determines the capacitors from gate-to-drain (Cgd),

and gate-to-source(CgS). The PN junction formedduring
the fabrication of the MOS FET results in a junction capac
itance from drain-to-source (Cfjs).
These capacitances are characterized as input (Cjss),

output (Coss) and reverse transfer (Crss) capacitances on

In addition to the typical IMD and power gain data

presented. Figure 6 may give the designer additional
information on the capabilities of this device. The graph
represents the small signal unity current gain frequency
at a given drain current level. This is equivalent to fj for
bipolar transistors. Since this test is performed at a fast
sweep speed, heating of the device does not occur. Thus,
in normal use, the higher temperatures may degrade

data sheets. The relationships between the inter-terminal

capacitances and those given on data sheets are shown

these characteristics to some extent.

below. The Cjss can be specified in two ways:

DRAIN CHARACTERISTICS

One figure of merit for a FET is its static resistance in

1. Drain shorted to source and positive voltage at the

the full-on condition. This on-resistance, Vps{on)< occurs

gate.

2. Positive voltage of the drain in respect to source and

zero volts at the gate. In the latter case the numbers
are lower. However, neither method represents the
actual operating conditions in RF applications.

in the linear region of the output characteristic and is

specified under specific test conditions for gate-source

voltage and drain current. For MOSFETs, Vrjs(on) nas a

positive temperature coefficient and constitutes an
important design consideration at high temperatures,
because it contributes to the power dissipation within the
device.

GATE CHARACTERISTICS

^iss = Cgd = Cgs

Coss = Cgrj = Cfjs
Qss = Cgd

GATE

The gate of the MOS FET is a polysilicon material, and

is electrically isolated from the source by a layer of oxide.

The input resistance is very high on the order of 10^

ohms resulting in a leakage current of a few
nanoamperes.

Gate control is achieved by applying a positive voltage

slightly in excess of the gate-to-source threshold voltage,
SOURCE

VGS(th)-

MOTOROLA RF DEVICE DATA

2-398

MRF151

DESIGN CONSIDERATIONS
The MRF151 is an RF Power, MOS, N-channel enhance

Gate Voltage Rating Never exceed the gate voltage

ment mode field-effect transistor (FET) designed for HF

and VHF power amplifier applications.

Motorola Application Note AN-211A, FETs in Theory

and Practice, is suggested reading for those not familiar
with the construction and characteristics of FETs.

The major advantages of RF power MOSFETs include

Gate ProtectionThis device does not have an internal

monolithic zener diode from gate-to-source gate protec

tion is required, an external zener diode is recommended.

Using a resistor to keep the gate-to-source impedance
low also helps damp transients and serves another
important function. Voltage transients on the drain can

power dc control signal.

DC BIAS

be coupled to the gate through the parasitic gate-drain

The MRF151 is an enhancement mode FET and, there

capacitance. If the gate-to-source impedance and the rate

of voltage change on the drain are both high, then the
signal coupled to the gate may be large enough to exceed
the gate-threshold voltage and turn the device on.

fore, does not conduct when drain voltage is applied.

Drain current flows when a positive voltage is applied to

the gate. RF power FETs require forward bias for opti

mum performance. The value of quiescent drain current

HANDLING CONSIDERATIONS

When shipping, the devices should be transported only

aging should be kept in metal tote bins. MOSFETs should

be handled by the case and not by the leads, and when
testing the.device, all leads should make good electrical
contact before voltage is applied. As a final note, when

placing the FET into the system it is designed for, sol

dering should be done with a grounded iron.

dDQ) is not critical for many applications. The MRF151

was characterized at Idq = 250 mA, each side, which is
the suggested minimum value of Idq- For special appli
cations such as linear amplification. Idq may have to be
selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current.

Therefore, the gate bias circuit may be just a simple resis

tive divider network. Some applications may require a
more elaborate bias system.
GAIN CONTROL

Power output of the MRF151 may be controlled from

its rated value down to zero (negative gain) by varying
the dc gate voltage. This feature facilitates the design of
manual gain control, AGC/ALC and modulation systems.

MOTOROLA RF DEVICE DATA

2-399

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

The RF MOSFET Line

MRF151G

RF Power Field-Effect Transistor

N-Channel Enhancement-Mode MOSFET
... designed for broadband commercial and military applications at frequencies to
175 MHz. The high power, high gain and broadband performance of this device makes
possible solid state transmitters for FM broadcast or TV channel frequency bands.

300 W, 50 V, 175 MHz

N-CHANNEL
BROADBAND
RF POWER MOSFET

Guaranteed Performance at 175 MHz, 50 V:

Output Power 300 W

Gain 14 dB (16dB Typ)
Efficiency 50%

Low Thermal Resistance 0.35OW

Ruggedness Tested at Rated Output Power

Nitride Passivated Die for Enhanced Reliability
GO-

OS
GO-

[Flange)

MAXIMUM RATINGS

CASE 375-01, STYLE 2

Symbol

Value

Unit

Drain-Source Voltage

VDSS

125

Vdc

Drain-Gate Voltage

VqG0

125

Vdc

vqs

Vdc

Drain Current Continuous

Adc

Total Device Dissipation (a Tc = 25C

500

Wans

2.85

W/C

Rating

Gate-Source Voltage

Derate above 25C

Storage Temperature Range

Operating Junction Temperature

Tstg

-65 to +150

200

Symbol

Max

Unit

Rojc

0.35

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

MOTOROLA RF DEVICE DATA

2-400

MRF151G

ELECTRICAL CHARACTERISTICS (Tc = 25Cunless otherwise noted)

Symbol

Min

Drain-Source Breakdown Voltage

(Vqs = 0, Id = 100 mA)

V(BR)DSS

125

Zero Gate Voltage Drain Current

'dss

Characteristic

Typ

Max

UnH

OFF CHARACTERISTICS (Each Side)

Vdc

mAdc

fiAdc

Vdc

(vDs = so v, vqs = o)
Gate-Body Leakage Current

gss

(Vqs = 20 V, VDS = 0)
ON CHARACTERISTICS (Each Side)

Gate Threshold Voltage (Vds = 1 V, Id = 10 mA)

VGS(th)

Drain-Source On-Voltage (Vgs = 10 V, Id = 10 A)

VDS(on)

Forward Transconductance (Vds = 10 V, Id = 5 A)

9fs

1
-

Vdc
mhos

DYNAMIC CHARACTERISTICS (Each Side)

Input Capacitance (Vds = 50 V, Vqs = 0, f = 1 MHz)

Cjss

Output Capacitance (Vds = 50 V VGS = 0, f = 1 MHz)

C0ss

Reverse Transfer Capacitance (Vds = 50 V, Vqs = 0, f = 1 MHz)

Crss

350

225

pF
pF
PF

FUNCTIONAL TESTS

Common Source Amplifier Power Gain

Gps

(VDd = 50 V, Pout = 300 W, lDQ = 500 mA, f = 175 MHz)

Drain Efficiency

(VDD = 50 V, Pout = 300 W, f = 175 MHz, Id (Max) = 11 A)

Load Mismatch

<l>

(Vdd = 50 V, Pout = 300 W, Idq = 50O mA,

No Degradation in Output Power

VSWR 5:1 at all Phase Angles)

" 1"1C5

BIAS 0-6 V

"Jl

f~"Tl_l

Q "^f_1OUTPUT

j LI

OUT

<fl*

(3> <*><*>

C2?

R1 100 Ohms. 1/2 W

R2 I kOhm, 1/2 W

T1 9:1 RF Transformer. Can be made of 15-18 Ohm

CIArco 406. 15-115 pF

C2 Arco 402, 1.5-20 pF
C3, C4, C7, C8, C9 1000 pF Chip
C5. CIO 0.1 pF Chip
C6 330 pF Chip
CM 0.47 pF Ceramic Chip, Kernel 1215 or

T2 1:4 RF Transformer. Can be made of 25-35 Ohm

Semirigid Co-Ax, 62-90 Mils O.D.

Semirigid Co-Ax, 90-100 Mils O.D.
Board Material 0.062" Fiberglass IG10),
1 oz. Copper Clad. 2 Sides, <r = 5
NOTE: For stability, the input transformer T1 must be loaded
with ferrite toroids or beads to increase the common

Equivalent (100 V)

mode inductance. For operation below 100 MHz. The

same is required for the output transformer.

C12 Arco 403, 3-35 pF

LI 10 Turns AWG #16 Enameled Wire,
Close Wound. 1/4" I.D.

See Figure 6 for construction details of T1 and T2.

12 Ferrite Beads ol Suitable Material for

1.5-2 pH Total Inductance

Unless Otherwise Noted. All Chip Capacitors are ATC Type 100 or Equivalent.

Figure 1.175 MHz Test Circuit

MOTOROLA RF DEVICE DATA

2-401

MRF151G

TYPICAL CHARACTERISTICS

2000

i
Vnr -

500

1
1

^T-4^

CISS

100

1000

2
<

_f-rss
10

Vds.drain-source voltage ivoltsi

Rgure 2. Capacitance versus Drain-Source Voltage*

1.02

(XI

1.03

= 5A

1.01
I

0.99
0.98
0.97

- Tr = JW-

0.98

^"-v.,

0.95
0.94

S1A

0.93

>0.92
'0.91

100 mA\250.mA\

0.30
0

Rgure 3. Common Source Unity Gain

Frequency versus Drain Current*

Data shown applies lo each half of MRF151G.

. 1.04

ID. DRAIN CURRENT (AMPSI

Vos- DRAIN-T0S0URCE VOLTAGE (VOLTS)

TC. CASE TEMPERATURE lCI

Rgure 4. Gate-Source Voltage versus

Case Temperature*

Figure 5. DC Safe Operating Area

HIGH IMPEDANCE
WINDINGS
9!

IMPEDANCE
RATIO

CONNECTIONS
10 LOW IMPEDANCE

WINDINGS

Rgure 6. RF Transformer

MOTOROLA RF DEVICE DATA

2-402

MRF151G

TYPICAL CHARACTERISTICS

350

_f -

50UHl

300

N175

5 250

MHz

j" 200
2

P ,S0
o

100

'200
MHz
Vnn

"Vqd = duv

rov

1W = 2x2 50 mA
-R out = 150rV

Pjn. INPUT POWER IWATTSI

Figure 7. Output Power versus Input Power

30
f. FREQUENCY (MHz)

100

Figure 8. Power Gain versus Frequency

Zol* = Conjugate oftheoptimum load impedance

intowhichthe deviceoutputoperates at a
given outputpower, voltage and frequency.

Rgure 9. Input and Output Impedance

MOTOROLA RF DEVICE DATA

2-403

200

MRF151G

RF POWER MOSFET CONSIDERATIONS

MOSFET CAPACITANCES

GATE CHARACTERISTICS

The physical structure of a MOSFET results in capaci

tors between the terminals. The metal anode gate struc

The gate of the MOS FET is a polysilicon material, and

is electrically isolated from the source by a layer of oxide.

ture determines thecapacitors from gate-to-drain (Cgd),

and gate-to-source (CgS). The PN junction formed during

The input resistance is very high on the order of 1fj9

ohms resulting in a leakage current of a few

the fabrication of the MOSFET results in a junction capac

itance from drain-to-source (C<js).
These capacitances are characterized as input (Cjss),
output (Coss)and reverse transfer (Crss)capacitances on

VGS(th)-

data sheets. The relationships between the inter-terminal

capacitances and those given on data sheets are shown

rating. Exceeding the rated Vqs can result in permanent

below. The Cjss can be specified in two ways:

1. Drain shorted to source and positive voltage at the
gate.

2. Positive voltage of the drain in respect to source and

zero volts at the gate. In the latter case the numbers
are lower. However, neither method represents the
actual operating conditions in RF applications.

nanoamperes.

Gate control is achieved by applying a positive voltage

slightly in excess of the gate-to-source threshold voltage,
Gate Voltage Rating Never exceed the gate voltage
damage to the oxide layer in the gate region.
Gate Termination The gates of this device are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These condi
tions can result in turn-on of the device due to voltage
build-up on the input capacitor due to leakage currents
or pickup.
Gate ProtectionThis device does not have an internal

monolithic zener diode from gate-to-source gate protec

tion is required, an external zener diode is recommended.

Using a resistor to keep the gate-to-source impedance

low also helps damp transients and serves another
important function. Voltage transients on the drain can

be coupled to the gate through the parasitic gate-drain

GATE

capacitance. If the gate-to-source impedance and the rate

of voltage change on the drain are both high, then the
signal coupled to the gate may be large enough to exceed
the gate-threshold voltage and turn the device on.

ClSS = Cg(J = CgS

^OSS = Cg(J = CdS
Crss = Cgd

HANDLING CONSIDERATIONS

When shipping, the devices should be transported only

LINEARITY AND GAIN CHARACTERISTICS

In addition to the typical IMD and power gain data

presented. Figure 3 may give the designer additional

information on the capabilities of this device. The graph

represents the small signal unity current gain frequency
at a given drain current level. This is equivalent to rj for
bipolar transistors. Since this test is performed at a fast
sweep speed, heating of the device does not occur. Thus,
in normal use, the higher temperatures may degrade
these characteristics to some extent.

in antistatic bags or conductive foam. Upon removal from

the packaging, careful handling procedures should be
adhered to. Those handling the devices should wear
grounding straps and devices not in the antistatic pack
aging should be kept in metal tote bins. MOSFETs should
be handled by the case and not by the leads, and when
testing the device, all leads should make good electrical
contact before voltage is applied. As a final note, when
placing the FET into the system it is designed for, sol
dering should be done with a grounded iron.
DESIGN CONSIDERATIONS

The MRF151G is an RF Power, MOS, N-channel

DRAIN CHARACTERISTICS

One figure of merit for a FET is its static resistance in

the full-on condition. This on-resistance, VoS(on)' occurs

in the linear region of the output characteristic and is
specified under specific test conditions for gate-source

voltage and drain current. For MOSFETs, Vps(on) nas a

positive temperature coefficient and constitutes an
important design consideration at high temperatures,
because it contributes to the power dissipation within the
device.

enhancement mode field-effect transistor (FET) designed

for HF and VHF power amplifier applications.
Motorola Application Note AN-211A, FETs in Theory
and Practice, is suggested reading for those not familiar
with the construction and characteristics of FETs.

The major advantages of RF power MOSFETs include

MOTOROLA RF DEVICE DATA

2-404

MRF151G

DC BIAS
The MRF151G is an enhancement mode FET and, there

fore, does not conduct when drain voltage is applied.

Drain current flows when a positive voltage is applied to
the gate. RF power FETs require forward bias for opti
mum performance. The value of quiescent drain current

(lDQ)'S not critical for many applications. The MRF151G

was characterized at Iqq = 250 mA, each side, which is
the suggested minimum value of Idq. For special appli
cations such as linear amplification. Idq may have to be
selected to optimize the critical parameters.

The gate is a dc open circuit and draws no current.

Therefore, the gate bias circuit may be just a simple resis

tive divider network. Some applications may require a
more elaborate bias system.
GAIN CONTROL

Power output of the MRF151G may be controlled from

its rated value down to zero (negative gain) by varying
the dc gate voltage. This feature facilitates the design of
manual gain control, AGC/ALC and modulation systems.

MOTOROLA RF DEVICE DATA

2-405

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF154

The RF MOSFET Line

RF Power Field Effect Transistor

N-Channel Enhancement-Mode MOSFET
600 W, 50 V, 80 MHz
N-CHANNEL
BROADBAND
RF POWER MOSFET

... designed primarily for linear large-signal output

stages in the 2-100 MHz frequency range.
Specified 50 Volts, 30 MHz Characteristics
Output Power = 600 Watts
Power Gain = 17 dB (Typ)

Efficiency = 45%(Typ)

GOCASE 368-01, STYLE 2

(HOG PAC)
OS

MAXIMUM RATINGS

Rating
Drain-Source Voltage

Drain-Gate Voltage
Gate-Source Voltage

Symbol

Value

VDSS

125

Vdc

vdgo

125

Vdc

Unit

vgs

Vdc

Drain Current Continuous

Adc

Total Device Dissipation @ Tc - 25C

1350

Watts

7.7

W/C

Tstg

-65 to +150

200

Symbol

Max

Unit

fjc

0.13

*c/w

Derate above 25 C

Storage Temperature Range

Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Handling and Packaging MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging
MOS devices should be observed.

MOTOROLA RF DEVICE DATA

2-406

MRF154
ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted)
Characteristic

Symbol

Min

V(BR)DSS

125

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Vdc

mAdc

pAdc

Vdc

(Vqs = 0, Id = 100 mA)

Zero Gate Voltage Drain Current

<DSS

(vDs = so v, Vqs = 01
Gate-Body Leakage Current

IQSS

IVGS = 20V,VDS = 0)
ON CHARACTERISTICS

Gate Threshold Voltage

(Vds = 10 V, Id = 100 mA)

VGS(th)

Drain-Source On-Voltage
(Vqs = 10 V, Id = 40 A)

VDS(on)

Forward Transconductance

9fs

1600

1000

200

mhos

(vDs = io v. Id = 20 A)
DYNAMIC CHARACTERISTICS

CjS8

Input Capacitance

(VDS = 50 V, Vqs = OV, f = I MHz)

Output Capacitance
(Vds = 50 V, Vqs = 0, f = 1 MHz)

C0ss

Reverse Transfer Capacitance

Crss

(Vds = 50 V, Vqs = O,f = I MHz)

FUNCTIONAL TESTS

Common Source Amplifier Power Gain

Gps

(Vdd = 50 V, Pout = 600 W, lDQ = 800 mA, f = 30 MHz)

Drain Efficiency

(Vdd = 50 V, Pout = 600 W, Idq = 800 mA, f = 30 MHz)

IMD(d3)

Intermodulation Distortion

(Vdd = so v, pout = 600 w(pepi, m = 30 mhz,

f2 = 30.001 MHz, Idq = 800 mA)

-25
"

dB
"

Input

T JC1_JC2
# sp C3
J_

C1.C3.C8 Arco 469

C2 330 pF
C4 680 pF
C5. C19. C20 0.47 pF. RMC Type 2225C
C6, C7, C14, C15, C16 0.1 pF
C9.C10.C11 470 pF
C12lOOOpF
C13 Two Unencapsulated 1000 pF Mica, in Series
C17, C18 0.039 pF
C21 10 mF/IOO V Electrolytic
R1, R2 10 Ohms/2W Carbon

LI 2 Turns #16 AWG, 1/2" ID, 3/8" Long

L2, L3 Ferrite Beads, Fair-Rite Products Corp. #2673000801

T1 RF Transformer, 1:25 Impedance Ratio. See Motorola
Application Note AN-749, Figure 4 for details.
Ferrite Material: 2 Each, Fair-Rite Products
Corp. #2667540001

All capacitors ATC type 100/200 chips or equivalent unless otherwise noted.

RGURE 1 30 MHz TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-407

MRF154
25

<
VD0< = 50V

11
vdc) = 40V

15
10

DQ = 800mA)
10

1 1 1

.. 1 J.. 1

vdd = 50V
lDQ = 800mA
Pout = 600 W
I

2.0

5.0

Pin. INPUT POWER (WATTS)

I, FREQUENCY (MHz)

Figure 2. Power Gain versus Frequency

Rgure 3. Output Power versus Input Power

10.000

H
1
1
:::vgi

5000

f - 1M

= 2
3.

_o?s

1000

a
<_>

500

Pres_

200
i

100

200

Rgure 4. DC Safe Operating Area

TYPICAL DEVICESHf. )WN

I
VGS(th) = 3.5 V

/
'/

//
//
//

J 10

100

| |

v0s = 30 V

M4*
'

Vds

19 \

gfs = 24rr,ihos

Rgure 5. Capacitance versus Drain Voltage

2 m
vos = 10 /

Vds.DRAIN VOLTAGE {VOLTS)

Vos.DRAIN-SOURCE VOLTAGE (VOLTS)

VGS. GATE-SOURCE VOLTAGE (VOLTS)

lD. DRAIN CURRENT (AMPS)

Rgure 6. Gate Voltage versus Drain Current

Rgure 7. Common Source Unity Gain Frequency

versus Drain Current

MOTOROLA RF DEVICE DATA

2-408

MRF154

Figure 8. Series Equivalent Impedance

BIAS

30-40V

ir
IC1

\ 1"h i
(t>
=

B14

C11

TEMP. TRACKING

CI 1000 pF Ceramic
C2, C3, C4, C8, C9, CIO, C11 0.1 pF Ceramic

R8 Thermistor, 10 k <25'C), 2.5 k <75*C)

C5 10 mF/100V Electrolytic
C6, C7 0.1 pF Ceramic, (ATC 200/823 or Equivalent)
01 28 V Zener, 1N5362 or Equivalent

R9, RIO100 Ohms

R11.R121.0 k
R13, R14 60-100 Ohms, 4 x 2 W Carbon in Parallel

D31N4148
IC1 MC1723

T1 9:1 Transformer, Trifilar and Balun Wound on Separate

Fair-Rite Products Corp. Balun Cores #286100012, 5 Turns Each.

LI, L2 Fair-Rite Products Corp. Ferrite Beads #2673000801

R1, R2, R3 lOkTrimpot

T2 1:9 Transformer, Balun 50 Ohm CO-AX Cable RG-188,

R7 10 k

Low Impedance Lines W.L. Gore 16 Ohms CO-AX Type CXN

R41.0 k/LOW

1837.

R5 10 Ohms
R6 2.0 k

Each Winding Threaded Through Two Fair-RiteProducts Corp.

#2661540001 Ferrite Sleeves (6 Each).
XTR MRF154

Rgure 9.20-80 MHz 1 kW Broadband Amplifier

MOTOROLA RF DEVICE DATA

2-409

MRF154
RF POWER MOSFET CONSIDERATIONS

MOSFET CAPACITANCES

oxide. The input resistance is very high on the order

The physical structure of a MOSFET results in capaci

tors between the terminals. The metal oxide gate struc

of 10^ ohms resulting in a leakage current of a few

nanoamperes.

Gate control is achieved by applying a positive voltage

turedetermines the capacitors from gate-to-drain (Cgd),

and gate-tosource (CgS). ThePN junction formed during

slightly in excess of the gate-to-source threshold voltage,

the fabrication of the RF MOSFET results in a junction

VGS(th)-

capacitance from drain-to-source (C(js).

These capacitances are characterized as input (Cjss),
output (Coss) and reverse transfer (Crss) capacitances on

Gate Voltage Rating Never exceed the gate voltage

rating. Exceeding the rated Vqs can result in permanent

damage to the oxide layer in the gate region.

data sheets. The relationships between the interterminal

capacitances and those given on data sheets are shown
below. The Cjss can be specified in two ways:
1. Drain shorted to source and positive voltage at the

Gate Termination The gates of these devices are

essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the devices due to voltage build
up on the input capacitor due to leakage currents or
pickup.

gate.

2. Positive voltage of the drain in respect to source and

zero volts at the gate. In the latter case the numbers
are lower. However, neither method represents the
actual operating conditions in RF applications.

Gate Protection These devices do not have an in

ternal monolithic zener diode from gate-to-source. The

addition of an internal zener diode may result in detri
mental effects on the reliability of a power MOSFET. If
gate protection is required, an external zener diode is

O Drain

recommended.

-C

GateO

ApCds

ciss = Cgd + Cgs

Coss = Cgd + CfJs
cres = cgd

MOUNTING OF HIGH POWER RF

POWER TRANSISTORS

O Source

LINEARITY AND GAIN CHARACTERISTICS

In addition to the typical IMD and power gain data

presented, Figure 5 may give the designer additional in
formation on the capabilities of this device. The graph
represents the small signal unity current gain frequency

at a given drain current level. This is equivalent to fj for

The package of this device is designed for conduction

cooling. It is extremely important to minimize the thermal
resistance between the device flange and the heat
dissipator.
Since the device mounting flange is made of soft cop
per, it may be deformed during various stages of han
dling or during transportation. It is recommended that
the user makes a final inspection on this before the device
installation. 0.0005" is considered sufficient for the

bipolar transistors. Since this test is performed at a fast

sweep speed, heating of the device does not occur. Thus,

flange bottom.
The same applies to the heat dissipator in the device

in normal use, the higher temperatures may degrade

mounting area. If copper heatsink is not used, a copper

head spreader is strongly recommended between the de
vice mounting surfaces and the main heatsink. It should

these characteristics to some extent.

DRAIN CHARACTERISTICS

be at least 1/4" thick and extend at least one inch from

One figure of merit for a FET is its static resistance in

the full-on condition.This on-resistance, VoS(on)< occurs

in the linear region of the output characteristic and is
specified under specific test conditions for gate-source

voltage and drain current. For MOSFETs, Vos(on) has a

positive temperature coefficient and constitutes an im

portant design consideration at high temperatures, be

cause it contributes to the power dissipation within the
device.

the flange edges. A thin layer of thermal compound in

all interfaces is, of course, essential. The recommended

torque on the 4-40 mounting screws should be in the

area of 4-5 Ibs.-inch, and spring type lock washers along

with flat washers are recommended.

For die temperature calculations, the A temperature

from a corner mounting screw area to the bottom center
of the flange is approximately 5C and 10C under normal
operating conditions (dissipation 150 W and 300 W

respectively).
The main heat dissipator must be sufficiently large and

GATE CHARACTERISTICS

The gate of the RF MOSFET is a polysilicon material,

and is electrically isolated from the source by a layer of

have low R#for moderate air velocity, unless liquid cool

ing is employed.

MOTOROLA RF DEVICE DATA

2-410

MRF154
ratings should be consulted on these aspects prior to

CIRCUIT CONSIDERATIONS

At high power levels (500 W and up), the circuit lay

out becomes critical due to the low impedance levels and
high RF currents associated with the output matching.
Some of the components, such as capacitors and induc
tors must also withstand these currents. The component
losses are directly proportional to the operating fre
quency. The manufacturers specifications on capacitor

design.

Push-pull circuits are less critical in general, since the

ground referenced RF loops are practically eliminated,
and the impedance levels are higher for a given power
output. High power broadband transformers are also eas
ier to design than comparable LC matching networks.

EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY

Collector
Emitter
Base

Drain
Source
Gate

V(BR)CES

V(BR)DSS

VCBO
lC
ices
ebo

vDGO
'D
"dss
'gss

VBE(on)
VCE(sat)

VQS(th)
VDS(on)

Cjb
Cob
hfe

Cjss
Coss
Qfs

VCE(sat)
RCE(sat) =j

vDS(on)
'DS(on) =j

MOTOROLA RF DEVICE DATA

2-411

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF161

The RF MOSFET Line

5.0 W

2.0-400 MHz

N-CHANNEL MOS
BROADBAND RF POWER

N-CHANNEL ENHANCEMENT-MODE
RF POWER FIELD-EFFECT TRANSISTOR

... designed for wideband large-signal amplifier and oscillator

applications in the 2.0 to 400 MHz range.

FET

Guaranteed 28 Volt, 400 MHz Performance

Output Power = 5.0 Watts

Minimum Gain = 11 dB

Efficiency = 50% (Typical)

Small-Signal and Large-Signal Characterization

100% Tested for Load Mismatch At All Phase Angles
With 30:1 VSWR

Low Noise Figure 3.0 dB (Typ) at 100 mA, 400 MHz

Excellent Thermal Stability, Ideally Suited For Class A
Operation
Facilitates Manual Gain Control, ALC and Modulation

Techniques

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain-Source Voltage

vDss

Vdc

Drain-Gate Voltage

Vdgr

Vdc

(RGS = 1.0 Mil)

Gate-Source Voltage

vqs

=40

Vdc

Drain Current Continuous

0.9

Adc

Total Device Dissipation Co Tc = 25C

Derate above 25C

17.5

Wans

0.10

wrc

-65 to +150

Storage Temperature Range

Operating Junction Temperature

Tsta
Tj

200

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

C
0
E
f
J
K

Thermal Resistance, Junction to Case

Rfljc

x/w

M
P

Handling and Packaging MOS devices are susceptible to damage irom electrostatic charge.
Resonabla precautions in handling and packaging MOS devices should be observed.

$
T
U

MUIMEItRS
UN
MAX
706
726
620
650

moHES
KM
0278
0244

1493

1651

ossa

0650

$
1

696
165

0065

152
008

am
0055
0.060

017

0.003

0007

110$
45" NOM

300
1*0

325

292

0435

2-412

0235

45'NOM
0050

177

0118
0055

0128
0070

363

0.115

0145

CASE 244-04

MOTOROLA RF DEVICE DATA

MAX

0285
0256

MRF161

ELECTRICAL CHARACTERISTICS (Tc = 25X unless otherwise noted)

Min J Typ

Symbol

Characteristic

Max

Unit |

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

V(BR)DSS

Vdc

1.0

mAdc

1.0

ptAdc

6.0

Vdc

(Vqs = 0, Id = 5.0 mA)

Zero Gate Voltage Drain Current

IDSS

(VDS = 28 V, Vqs = 0)
Gate-Source Leakage Current

igss

(Vqs = 40 v, vDs = o>

ON CHARACTERISTICS

I Gate Threshold Voltage

vGS(th)

1.0

3.0

9fs

110

(Vds = 1 v. Id w mA)
Forward Transconductance

mmhos

(Vds = iov, id = 100 mA)

DYNAMIC CHARACTERISTICS

Input Capacitance

Cjss

7.0

9.7

(VDS = 28 V, Vqs = 0, f = 1.0 MHz)

Output Capacitance

C0ss

(VDS = 28 V, Vqs = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

crss

2.3

(VDS = 28 V, Vqs = 0, f = 1.0 MHz)

FUNCTIONAL CHARACTERISTICS (Figure 1)
Noise Figure

3.0

(Vos = 28 Vdc, Id = 100 mA, f = 400 MHz,

Zs = 67.6 + J14.1,Z|_ = 14.5 + J25.7)
Common Source Power Gain

GpS

13.5

(VDD " 28 Vdc, Pout = 5.0 W, f = 400 MHz, lDQ = 50 mA)

Drain Efficiency

(Vdd = 28 Vdc, Pout = 5.0 W, f = 400 MHz,Idq = 50 mA)

Electrical Ruggedness

No Degradation in Output Power

<i>

(VDD = 28 Vdc, Pout = 5.0 W, f = 400 MHz, lDQ = 50 mA,

VSWR 30:1 at All Phase Angles)

RGURE 1 400 MHz TEST CIRCUIT

C12jC13

CI. C2. C13 0.1 pf. 50 V Ditc Ceramic

C3 0.01 (if. 100 V Disc Ceramic
C4. C10 220 pF. 100 Mil Chip Cap
C5 1-10 pF Johanson or Equivalent
C6 5.0 pF MiniUnloco or Equivalem
C7 1-20 pF Johanson or Equivalent
C8 15 pF. 100 Mil ATC Chip Cap or Equivalent
C9. C11 2.2. 100 Mil ATC Chip Cap or Equivalent
C12. C14 680 pF Feedthru
CIS 50 pf. 35 V

C14 C15_|_*

IlTX^

LI 1-34 Turns. 0.185" 10 0.08" Long #20 AWG Enamel (25 nH)

L2 #20 AWG Enamel. Hairpin/^Jo.363" H0.5 nHI

-4 *-0.185"

L3 1-34 Turns. 0.128" 10 0.11" Long *ia AWG Enamel 115 nH)

L4 #18 AWG Enamel. Hairpin/^0.410" M2.5 nH)

-*l *-0.185"

RFC1 10 Turns. 0.300" 10 #20 AWG Enamel Closewound

RFC2 Ferroxcube VK 200

Z1 0.B2" i 0.164" Microstrip IZo - 50 III

R1 1.6U1. 1'4W
R2 10 Turns 10 Ml
R3 10 k. 1/2 W

Z2. Z3 0.60" x 0.25" Microstrip

D1 1N5347B Motorola Zener or Equivalent

Board-Glass Teflon. 62 Mils. , * 2.56

Z4 0.76" x 0.164" Microstrip IZo - 50 II)

MOTOROLA RF DEVICE DATA

2-413

MRF161

RGURE 2 OUTPUT POWER versus INPUT POWER

RGURE 3 OUTPUT POWER versus INPUT POWER

3.0

Voo = 28 V
w = 50 mA

-VDD
2.0

= 13.5 V-50 mA

f = 100 MHz

1 = 100 MHz

225 MHz

3.0

-225 MHz
300 MHz

-300 MHj

1
400 MHj

1- 400 MHz
0

100

200

300

400

500

100

200

Pin. INPUT POWER (MiLUWATTS)

300

400

500

Pin,INPUT POWER (MILLIWATTS)

RGURE 4 OUTPUT POWER versus SUPPLY VOLTAGE

RGURE 5 OUTPUT POWER versus SUPPLY VOLTAGE

f = 400 MHz

f = 300 MHz
1

Pin = 500 mW^

Pin = juumvv^*

7.0

'00 =

50 mA

'DO =

6.0

50 mA

00 mW"

200 mW^

50 mW

100 mW

3.0
X

i2.0

2.0

vdd. supply voltage ivoltsi

Vdd.supply voltage ivoltsi

RGURE 6 OUTPUT POWER versus SUPPLY VOLTAGE

RGURE 7 OUTPUT POWER versus SUPPLY VOLTAGE

f = 100 MHz

f = 225 MHz

8.0

Pin = 100mW

Pin = 2DOmWj,

7.0

'D0 =

50 mA

7.0

"DO -

6.0

*"**

50 mA

6.0

' 50mWT

5.0

50 mW

4.0
F5mW

| 3.0

3.0

g20

8 2-0
1.0
0

VDD. SUPPLY VOLTAGE (VOLTS)

Vqd. SUPPLY VOLTAGE IVOLTSI

MOTOROLA RF DEVICE DATA

2-414

MRF161

RGURE 9 DRAIN CURRENT versus GATE VOLTAGE

RGURE 8 OUTPUT POWER versus GATE VOLTAGE

(TRANSFER CHARACTERISTICS)
6.0

500

- | = 400 MHz
_

5.0

Pjn = Consum

iC 400

Vrve = 78 V Inn = SOm ^

5 4.0

=t 300

Typical Device
Shown,Vfisith) =

_ Shown. Vnsithi = 3.0V_

3.0

3.0 V

E;
Vnc, == 10V-

1
1.0
0

1.0

2.0

3.0

2.0'

5.0

4.0

3.0

4.0

5.0

7.0

6.0

Vqs.GATE-SOURCE VOLTAGE IVOLTSI

VGS. GATE-SOURCE VOLTAGE (VOLTSI

RGURE 11 CAPACITANCE versus VOLTAGE

RGURE 10 GATE-SOURCE VOLTAGE versus

CASE TEMPERATURE
1.200

1.100

0.980

0960

^v ^

vos = 28V .

X
'S

k- "

100 mi

I 16

sL
"s

N.
*

<
u

0.940

Coss

<-> 8 0

1
0.920

4 0

0.900
75

100

Vqs. DRAIN SOURCE VOLTAGE (VOlTSl

TC. CASE TEMPERATURE |C)

MOTOROLA RF DEVICE DATA

2-415

8.0

MRF161

RGURE 12 MAXIMUM RATED FORWARD BIASED

SAFE OPERATING AREA
1

TC = 25C

"007

5 0 05
CE

^,003
0 02

100

V0s. DRAIN SOURCE VOLTAGE IV01TS)

RGURE 13 LARGE-SIGNAL SERIES EQUIVALENT INPUT AND

OUTPUT IMPEDANCE, Zj, Zql*

MOTOROLA RF DEVICE DATA

2-416

MRF161
RGURE 14 COMMON SOURCE SCATTERING PARAMETERS
50 OHM SYSTEM

Vqs = 28 V, Id = 250 mA

S22

Sl2

S21

S11

(MHz)

isii!

|S21I

L<t>

|SI

Z.<f>

IS22I

2.0

1.000

-1.69

13.64

178

0.002

0.947

-1.84

5.0

1.000

-4.63

13.60

176

0.005

0.945

-4.00

0.997

-8.95

13.70

173

0.010

0.941

-7.92

0.989

-17.49

13.36

167

0.022

0.929

-15.8

0.977

-26

13.07

162

0.032

0.915

-23

0.968

-34

12.76

156

0.042

0.902

-30

0.949

-42

12.31

151

0.050

0.885

-37

0.930

-49

11.88

146

0.058

0.866

-43

0.913

-56

11.45

141

0.066

0.846

-49

0.897

-62

10.96

137

0.072

0.831

-55

0.885

-68

10.50

133

0.078

0.817

-60

100

0.867

-74

10.00

129

0.081

0.800

-65

110

0.853

-78

9.54

125

0.085

0.787

-69

120

0.838

-84

8.92

122

O.OSO

0.775

-74

130

0.819

-88

8.75

119

0.093

0.762

-78

140

0.812

-92

8.30

116

0.096

0.755

-81

150

0.800

-36

7.95

113

0.098

0.742

-86

160

0.785

-99

7.54

111

0.100

0.735

-89

170

0.775

-103

7.25

109

0.102

0.728

-93

180

0.765

-105

6.85

106

0.103

0.725

-96

190

0.755

-108

6.60

104

0.104

0.720

-98

200

0.740

-111

6.20

100

0.106

0.719

-99

225

0.735

-116

5.71

0.110

0.715

-103

250

0.723

-121

5.17

0.112

0.708

-107

275

0.720

-124

4.80

0.113

0.706

-110

300

0.716

-128

4.43

0.112

7.0

0.706

-113

325

0.715

-130

4.17

0.111

4.0

0.717

-115

350

0.715

-133

3.87

0.111

3.0

0.720

-117

375

0.715

-135

3.67

0.111

1.0

0.728

-118

400

0.711

-137

3.43

0.109

0.729

-119

425

0.714

-139

3.25

0.104

0.738

-120

450

0.717

-140

3.11

0.104

-2.0

0.743

-121

475

0.719

-141

2.95

0.103

-3.0

0.757

-122

500

0.722

-142

2.81

0.102

-4.0

0.770

-122

525

0.723

-144

2.69

0.099

-6.0

0.777

-123

550

0.727

-144

2.55

0.097

-6.0

0.787

-123

675

0.729

-145

2.46

0.097

-7.0

0.802

-124

600

0.733

-146

2.37

0.094

-7.0

0.814

-124

625

0.734

-147

2.29

0.090

-8.0

0.824

-126

650

0.740

-148

2.19

0.087

-8.0

0.830

-127

675

0.749

-149

2.12

0.085

-6.0

0.849

-127

700

0.758

-149

2.07

0.084

-6.0

0.879

-127

725

0.761

-150

1.99

0.082

-5.0

0.886

-127

750

0.763

-151

1.93

0.081

-4.0

0.905

-127

775

0.765

-151

1.90

0.079

-3.0

0.919

-128

800

0.770

-152

1.83

0.076

-1.0

0.921

-128

MOTOROLA RF DEVICE DATA

2-417

MRF161

RGURE 15 S^, INPUTREFLECTION COEFRCIENT

RGURE 16 Sl2, REVERSETRANSMISSION COEFFICIENT

versus FREQUENCY

VDS = 28 V, Iq = 250 mA

vDs = 28 v, iD = 250 mA

RGURE 17 S2v FORWARDTRANSMISSION COEFRCIENT

RGURE 18 S22. OUTPUT REFLECTION COEFFICIENT

versus FREQUENCY

Vds = 28 V, Id = 250 mA

Vqs = 28 V, lD = 250 mA

MOTOROLA RF DEVICE DATA

2-418

MRF161

DESIGN CONSIDERATIONS

The MFSF161 is a RF power N-Channel enhancement

mode field-effect transistor (FET) designed especially for

UHF power amplifier and oscillator applications. Moto

simple resistive divider network. Some applications may

require a more elaborate bias system.
GAIN CONTROL

rola RF MOS FETs feature a vertical structure with a

Power output of the MRF161 may be controlled from

planar design, thus avoiding the processing difficulties

associated with V-groove vertical power FETs.
Motorola Application Note AN211A, FETs in Theory
and Practice, is suggested reading for those not familiar

its rated value down to zero (negative gain) by varying

the dc gate voltage. This feature facilitates the design of

manual gain control, AGC ALCand modulation systems.
(See Figure 8.)

with the construction and characteristics of FETs.

The major advantages of RF power FETs include high

gain, low noise, simple bias systems, relative immunity
from thermal runaway, and the ability to withstand
severely mismatched loads without suffering damage.
Power output can be varied over a wide range with a low
power dc control signal, thus facilitating manual gain

AMPLIFIER DESIGN

control, ALC and modulation.

task of broadband network design. Both small signal scat

tering parameters and large signal impedances are pro
vided. While the s-parameters will not produce an exact
design solution for high power operation, they do yield
a good first approximation. This is an additional advan
tage of RF MOS power FETs.
RF power FETs are triode devices and, therefore, not
unilateral. This, coupled with the very high gain of the
MRF161, yields a device capable of self oscillation. Sta
bility may be achieved by techniques such as drain load
ing, input shunt resistive loading, or output to input feed
back. Two port parameter stability analysis with the
MRF161 s-parameters provides a useful tool for selection
of loading or feedback circuitry to assure stable opera
tion. See Motorola Application Note AN215A for a dis
cussion of two port network theory and stability.

DC BIAS

The MRF161 is an enhancement mode FET and, there

fore, does riot conduct when drain voltage is applied.

Drain current flows when a positive voltage is applied to

the gate. See Figure 9 for a typical plol of drain current

versus gate voltage. RF power FETs require forward bias
for optimum performance. The value of quiescent drain
current (Iqq) is not critical for many applications. The
MRF161 was characterized at Iqq 50 mA, which is the
suggested minimum value of IrjQ. For special applica
tions such as linear amplification, Iqq may have to be
selected to optimize the critical parameters.

The gate is a dc open circuit and draws no current.

Therefore, the gate bias circuit may generally be just a

Impedance matching networks similar to those used

with bipolar UHF transistors are suitable for the MRF161.
See Motorola Application Note AN721, Impedance
Matching Networks Applied to RF Power Transistors. The
higher input impedance of RF MOS FETs helps ease the

FIGURE 19 400 MHz TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-419

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF162

The RF MOSFET Line

15 W

N-CHANNEL ENHANCEMENT-MODE
RF POWER FIELD-EFFECT TRANSISTOR

2.0-400 MHz

N-CHANNEL MOS

BROADBAND RF POWER

designed for wideband large-signal oulpul and driver applica

tions in the 2.0 to 400 MHz range.

FET

Guaranteed 28 Volt. 400 MHz Performance

Output Power - 15 Watts
Minimum Gam = 11 dB

Efficiency = 50% (Typical)

Small-Signal and Large-Signal Characterization

100% Tested for Load Mismatch At All Phase Angles
With 30:1 VSWR

Low Noise Figure - 2 0 dB (Typ) ai 300 mA. 400 MHz

Excellenl Thermal Stability. Ideally Suited For Class A Operai.-m

Facilitates Manual Gain Conirol. ALCand Modulation Techniques

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Vdc

Drain-Gale Voltage

VDGR

Vdc

jTi

<RGS- 1 OMIII
Gate Source Voltage

STYLE3:

VGS

Vdc

Drain Current - Continuous

Adc

2 GATE

T013I Device Dissipation <tt- Tq =25C

Walls

4 MAIN

Tstg

-65 to 150

200

PIN1 SOURCE

3 SOURCE

Derate above 25"C

Storage Temperature Range

Operating Junction Temperature

0286

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case

Symbol

RrtJC

Max

Unit
C W

Handling and Packaging

MOS devices are susceptible lo damage from elecirosianc charge
Reasonable prec3ulions in handling and packaging MOS devices should be observed

DIM
A

KHUHETERS
urn
MAX
726
706

INCHES
KM

0278
0244

620

650

14 S9

1651

0590

S46
140

596

0J15
0055
0060

0235

0003
0435

0007

E
f
J
X
M
t

165

152
003

017

DOS
45 NOM
_

127

2-420

0256
OEM

0.065
_

45" NOM
_

0050

S
T

300
140

325

0118

0128

177

0055

0070

252

368

0115

0145

CASE 244-04

MOTOROLA RF DEVICE DATA

MAX
0286

MRF162

ELECTRICAL CHARACTERISTICS (Tc = 25"C unless otherwise noiedl

Characteristic

Symbol

Min

V(BR)DSS

Typ

Max

Unit

OFF CHARACTERISTICS
Drain-Source Breakdown Voltage

Vdc
-

(VGS = 0. ID = 5.0 mA)

Zero Gate Voltage Dram Current

'DSS

mAdc

1 0

/iAdc

Vdc

(VDS i 28 V. VGS = 0)
Gate-Source Leakage Current

'gss

(VGS = 40 V, VDS - 0)
ON CHARACTERISTICS

Gate Threshold Voltage

vGS(th)

91s

250

400

rnmhos

C,ss

(VDS= 10 V. ID = 25 mA)
Forward Transconductance

(VDS= 10 V, lD= 250 mA)

DYNAMIC CHARACTERISTICS

Input Capacitance

C,ss

(VDS = 28 V. VGS = 0. 1 = 1 0 MHz)

Output Capacitance

f-oss

(VDs = 28 V, Vqs = 0. f = 1.0 MHz)

Reverse Transfer Capacitance

(VDs = 28 V. VGS = 0, I = 1.0 MHz)

FUNCTIONAL CHARACTERISTICS (Figure 1)
Noise Figure

(VDs = 28 Vdc, Iq = 300 mA. f = 400 MHz.

Zs = 5.9 * j7 8 11. Z|_= 3.78 |5 75 !!)
Common Source Power Gain

Gps

136

(VDD = 28 Vdc, Pou, = 15 W, 1 =400 MHz. ID0 = 50 mA>

Drain Efficiency

(VDD = 28 Vdc. Pou, = 15 W. f = 400 MHz. ID0 = 50 mA)

No Degradation in Oulpul Power

Electrical Ruggedness

(VDD = 28 Vdc. Poui = 15 W. f = 400 MHz, Idq = 50 mA.

VSWR 30:1 at All Phase Angles)
FIGURE 1

400 MHz TEST CIRCUIT

RFC2

-AAA,

Bias

Adjust

Inpul >~T~" I Z1

* CI

CI. C2. C3 1-20pF Johanson or Equivalent

- 10 Turns 10 k!!

C4. C7 -

1 6k!>. 1 4 W

270 pF. 100 Mil Chip Cap

C5 18 pF Mini-Unleco or Equivalent

RFC1

C6 12 pF, 100 Mil Chip Cap

10 Turns. 0 300" ID "20 AWG

Enamel Closewound

C8 0.01 pF. 50 V Disc Ceramic

RFC2

C9. C10. C12 - 0.1 pF. 50 V Disc Ceramic

C11. C14 680 pF Feedthru
C13 20^F. 50 V

Z1 -

1 5" 0 250" Microstrip

0.6"* 0 250" Microstrip

1 3" 0 250" Microstrip

D1 1N5925A Motorola Zener

Z4 0 85" 0 250" Microstrip

R1 10 kll. 1/4 W

Board

MOTOROLA RF DEVICE DATA

2-421

Ferroxcube VK 200

19 4B

Glass Teflon. 62 Mils..,

2 56

MRF162

FIGURE 2 -

f = too rv

OUTPUT POWER versus INPUT POWER

HzS

FIGURE 3 - OUTPUT POWER versus INPUT POWER

25 MH i ^ "

100 MHz/

.300 MHz

225 MHz^ ^mtmjL---'

400 MHz^.
-400 WHi

/
1/

/ //

Vdd = zb v

// /
// /
9/
V

,,'
VDD = 13.5 V
Iqq = 50 mA

Pjn.INPUT POWER (WATTS)

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 5

OUTPUT POWER versus SUPPLY VOLTAGE

400 MHz
1

Pin.INPUT POWER (WATTS)

'DO= 50 mA

300 MHz
1

'DO = 50 mA
18

. Pin = 10 w

0 6 Vt1

^-'

04 W

1?
<

0
Q_

0.3 W

t6.0
-

10
0.2 W

& 8.0

40
2.0
0

Vrjrj. SUPPLY VOLTAGE (VOLTS)

FIGURE 6 -

OUTPUT POWER versus SUPPLY VOLTAGE

vDd. supply voltage ivoltsi

FIGURE 7

OUTPUT POWER versus SUPPLY VOLTAGE

225 MHz

100 MHz

Iqq - 50 mA
p

18
w

iZrf^~
^7*^0

irs vv^

I 14
|>2

<^-"' t .35 W
0.2 v

'DO= 50 mA

= 0.5 VU^^

01 W-

| 80

6.0

o?4.0
20
0

Voq.SUPPLY VOLTAGE (VOLTS)

VDo. SUPPLY VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-422

MRF162

FIGURE 8 -

FIGURE 9 - DRAIN CURRENT versus GATE VOLTAGE

(TRANSFER CHARACTERISTICS)

OUTPUT POWER versus GATE VOLTAGE

2.0

1.8

18
f = 400 Mr
v>

1.6

pin = Consli nl'

V|,S = 28 V
>o j = 50m A

I U

VDS = '0 V J

I 0.8

Typical Oevice

5.0

>wn. VGS|th) = 3.0V

0.6

o. 4.0

0.4
0.2

2.0

-2.0

t;
fc 8.0
3
O

-1.0

1.0

2.0

3.0

4.0

5.0

6.0

VGs. GATE-SOURCE VOLTAGE (VOLTS)

CAPACITANCE versus

DRAIN-SOURCE VOLTAGE

,. Ifj= 750 mA

g 1.03

| 102

3.0

FIGURE 11 -

CASE TEMPERATURE
1.04

2.0

VGS, GATE-SOURCE VOLTAGE (VOLTS)

FIGURE 10 GATE-SOURCE VOLTAGE versus

/
J

S
o
a.

Typical Device

Shown. VGS(,h) = 3 0 V

JS = 28 V

\ 'GS = OV

-500 m A

1.01
% 1.00

1 = 1.0 MHz

5 0.99
25 JmA

S 0.38

y>ISS '

N. 2 5 mA

Crss

.5=0.95
0

1Q0

125

ISO

175

Tc CASE TEMPERATURE (C|

8.0

Vos.DRAIN-SOURCE VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-423

MRF162

FIGURE 12 - DC SAFE OPERATING AREA

SO
ST 3.0

. . .

f 2.0

1 ,0
<_>

I05
0.2
01

1.0

2.0

3.0

5.0

Vas. 0RAIN-S0URCE VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-424

100

MRF162

FIGURE 15 -

COMMON SOURCE SCATTERING PARAMETERS

50 OHM SYSTEM

VDS = 28 V. In =0.5 A
S11

S22

S12

S21

(MHz)

iS-n:

IS21I

S121

.'<b

|S22I

2.0

0.996

-11

34.29

171

0007

0 730

5.0

0.983

-27

33.00

159

0016

0729

-30

.:<!>

0.943

-51

31 76

147

0030

0728

-57

0.871

-86

24.38

130

0047

0726

-94

0.833

-109

18.82

118

0054

0727

-116

0.811

-123

14.93

110

0058

0728

129

0.796

-133

12.42

105

0.060

0729

138

0.788

-140

10.45

101

0.061

0729

~--"l43""*"
148

0.782

-145

9.13

0061

0 729

0.779

-149

8.01

0.062

0 731

151

0.777

-152

7 12

0062

7 1

0733

153

100

0.776

-155

6.48

0062

0735

155

110

0.775

-157

5.92

0062

0737

156

120

0.775

-158

5.45

0 062

0 739

158

130

0.775

-160

5.03

0062

1 5

0 741

159

140

0.775

-161

469

0062

0 4

0743

159

150

0.775

-162

437

0061

-06

0 744

160

0.777

-163

4 10

0062

-1 3

0746

161

170

0.777

-163

387

0061

2 2

0748

161

180

0.778

-164

365

0 061

2 8

0 750

161

190

0.780

-165

3.46

0061

0753

162

200

0.781

-165

3.29

0060

-42

0 755

162

225

0.784

-166

287

0060

-58

0765

163

250

0.788

-166

257

0059

-77

0 770

163

275

0.790

-167

230

0 059

-9 0

0 780

163

300

0.792

-167

220

0059

0795

163

325

0.794

-168

1.94

0059

-12

0 812 ~~

163

350

0.794

-169

1.78

0058

0 815

163

375

0.799

-169

1.67

0057

-16

0826

163

400

0.805

-169

1 56

0055

0 836

163

425

0.815

-169

1 45

0054

-17

0862

163

450

0.825

-169

1.39

0053

-17

0860

162

475

0.834

-170

1.32

0052

-17

0 871

162

500

0.837

-170

1 23

0 051

-16

0 871

-162

525

0.838

-171

1.16

0050

-14

0872

-162

550

0.843

-171

1.11

0.048

-13

0 883 "

-162

575

0.845

-172

1.07

0048

-12

0894

162

600

0.855

-172

1.03

0046

0.901

-163

625

0.856

-173

0.977

0045

-9 0

0905

163

650

0.875

-173

0.947

0044

0921

163

675

0.885

-173

0.914

0044

-5.0

0 938

163

700

0888

-174

0.873

0043

-40

0 949

164

725

0.892

-174

0 841

0.042

-1.0

0947

164

750

0.900

-174

0.821

0043

0970

-164

775

0910

-175

0814

0044

4 0

0978

-164

800

0.918

-176

0.775

0045

0978

164

MOTOROLA RF DEVICE DATA

2-425

MRF162

FIGURE 16 - Sn. INPUT REFLECTION COEFFICIENT

FIGURE 17 - S12. REVERSE TRANSMISSION COEFFICIENT

versus FREQUENCY

VDS

28 V. ID

versus FREQUENCY

0.5 A

VDS

28 V. ID 0.5 A
4

JO"

120^-

^60

\*30

150/ / /\s"

7CA8OO MHz ' 100 MK

l
f^ r i 1 1 II
11 1
M0611061104110311m\I oiL-y
91
V^AOO MHz* I yiso

^A^/ySJOO MHz/
150 \ \

/\_

-120^.^^

FIGURE 18 - S21. FORWARD TRANSMISSION COEFFICIENT

FIGURE 19

versus FREQUENCY

VDs

28 V. ID

150 /

/ />f-

ijOOMlB^vJ^00

JmJMHz N. ^

N. Ys^_
-120^'-^^

S22. OUTPUT REFLECTION COEFFICIENT

VDS

\.30

~J226 MHz \s*

~JfW0MHz\ \
2*8o3mHz J I
W
i zolITS
;ol 60I i
soll40Il 301
10L-7
-150 \ \

_^^60

versus FREQUENCY

0.5 A

120^

/-w

/-30

^^-^-60"

MOTOROLA RF DEVICE DATA

2-426

28 V. I0

0.5 A

MRF162

simple resistive divider network. Some applications may

DESIGN CONSIDERATIONS

require a more elaborate bias system.

The MRF162 is a RF power N-Channel enhancement

mode field-effect transistor (FET) designed especially for

UHF power amplifier and oscillator applications. Moto

GAIN CONTROL

rola RF MOS FETs feature a vertical structure with a

Power output of the MRF162 may be controlled from

planar design, thus avoiding the processing difficulties

associated with V-groove vertical power FETs.

its rated value down to zero (negative gain) by varying

the dc gate voltage. This feature facilitates the design of

manual gain control, AGC/ALC and modulation systems.

Motorola Application Note AN-211A, FETs in Theory

and Practice, is suggested reading for those not familiar

(See Figure 8.)

with the construction and characteristics of FETs.

The major advantages of RF power FETs include high

gain, low noise, simple bias systems, relative immunity
from thermal runaway, and the ability to withstand
severely mismatched loads without suffering damage.

AMPLIFIER DESIGN

power dc control signal, thus facilitating manual gain

Impedance matching networks similar to those used

with bipolar UHFtransistors are suitable for the MRF162.
See Motorola Application Note AN-721, Impedance
Matching Networks Applied to RF Power Transistors. The
higher input impedance of RF MOS FETs helps ease the

control, ALC and modulation.

task of broadband network design. Both small signal scat

DC BIAS

vided. While the s-parameters will not produce an exact

Power output can be varied over a wide range with a low

tering parameters and large signal impedances are pro

current (Iqq) is not critical for many applications. The

MRF162 was characterized at Iqq ~ 50 mA, which is the

design solution for high power operation, they do yield

a good first approximation. This is an additional advan
tage of RF MOS power FETs.
RF power FETs are triode devices and, therefore, not
unilateral. This, coupled with the very high gain of the
MRF162, yields a device capable of self oscillation. Sta
bility may be achieved by techniques such as drain load
ing, input shunt resistive loading, or output to input feed

suggested minimum value of Iqq. For special applica

back. Two port parameter stability analysis with the

tions such as linear amplification, Idq may have to be

MRF162 s-parameters provides a useful tool for selection

of loading or feedback circuitry to assure stable opera
tion. See Motorola Application Note AN-215A for a dis
cussion of two port network theory and stability.

The MRF162 is an enhancement mode FET and, there

fore, does not conduct when drain voltage is applied.

Drain current flows when a positive voltage is applied to
the gate. See Figure 9 for a typical plot of drain current
versus gate voltage. RF power FETs require forward bias
for optimum performance. The value of quiescent drain

selected to optimize the critical parameters.

The gate is a dc open circuit and draws no current.

Therefore, the gate bias circuit may generally be just a

FIGURE 20

400 MHz TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-427

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF163

The RF MOSFET Line

25 W

N-CHANNEL ENHANCEMENT-MODE
RF POWER FIELD-EFFECT TRANSISTOR

2.0-400 MHz

N-CHANNEL MOS
BROADBAND RF POWER

. . . designed for wideband large-signal output and driver applica

tions in the 2.0 to 400 MHz range.

FET

Guaranteed 28 Volt. 400 MHz Performance

Output Power = 25 Watts

Minimum Gain = 10 dB

Efficiency = 50% (Typical)

Small-Signal and Large-Signal Characterization

100% Tested for Load Mismatch At All Phase Angles

With 30:1 VSWR

Low Noise Figure 2.5 dB (Typ) at 500 mA. 400 MHz

Excellent Thermal Stability. Ideally Suited For Class A Operation

Facilitates Manual Gain Control. ALC and Modulation Techniques

/
1

/
1-1

)'TTD

-.-

-- 1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Vdc

Drain-Gate Voltage

vdgr

Vdc

vqs

Vdc

5.0

Adc

87.5

Watts

0.500

W/C

Tstg

-65 to +150

200

(RGS=10M(l)
Gate-Source Voltage
Drain Current Continuous

Total Device Dissipation @ Jq = 25C

Derate above 25C

Storage Temperature Range

Operating Junction Temperature

STYLE 3
FINI SOURCE
J. GATE
lSOuacE
4 DRAIN

DM
A

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case

Symbol

Max

Unit

RflJC

c/w

Handling and Packaging MOS devices are susceptible to damage from electrostatic charge
Reasonable precautions in handling and packaging MOS devices should be observed

B
C
D
E

MUMETERS
KN
MAX

MCKES
MM
MAX

7.06

0278
0744

650

1459

1651
596

546
140

1.57

006

11.05

M
t

S
T
U

165
_

017
_

45" NOM
177

2-428

0756

0735
0065

0003

0007

0435

0650

45* NOM
-

300
140

325

0118

177

232

368

0055
0115

CASE 244-04

MOTOROLA RF DEVICE DATA

0786

0530
0715
0055
0069

0050

0178
0070
0145

MRF163
ELECTRICAL CHARACTERISTICS (Tc= 25Cunlessotherwisenoted)
Characteristic

Symbol

Min

Drain-Source Breakdown Voltage

(Vqs = 0. ID= 10 mA)

V(BR)DSS

Zero Gate Voltage Drain Current

>DSS

Typ

OFF CHARACTERISTICS
-

Vdc

4.0

mAdc

1.0

uAdc

6.0

Vdc

<VDs=28V.Vgs = 0)
Gate-Source Leakage Current

loss

(vGS =4ov. vDs =o

ON CHARACTERISTICS

Gate Threshold Voltage

vGS(th)

1.0

3.0

8fs

500

750

(VDS= 10 V, lD=25mA)
Forward Transconductance

mmhos

(VDs = 10 V. ID = 500 mA)

DYNAMIC CHARACTERISTICS

Input Capacitance

Cjss

(VDS = 28 V. Vqs = 0. f = 1.0 MHz)

Output Capacitance

Coss

(VDS = 28 V. Vqs = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

Crss

(Vds = 28 V. Vqs = 0, f = 1.0 MHz)

FUNCTIONAL CHARACTERISTICS (Figure 1)
Noise Figure

2.5

(Vos = 28 Vdc. Id = 500 mA. f =400 MHz.

Zs = 3.23 +J2.57 O. Z|_= 2.11 +J2.97 0)
Common Source Power Gain

Gps

(VDd= 28 Vdc, P00t = 25 W. t = 400 MHz.Idq = 25 mA)

Drain Efficiency

(VDd= 28 Vdc. Pout = 25 W. f = 400 MHz. Idq = 25 mA)

Electrical Ruggedness

No Degradation in Output Power

(V0d = 28 Vdc, Pout = 25 W, f = 400 MHz. Idq = 25 mA,

VSWR 30:1 at All Phase Angles)
FIGURE 1 -

400 MHz TEST CIRCUIT

RFC2

Bias

1 Tci2 ri,_L _L

T~
T=C10

^ v0d =28 v

t~f

-~C9
-*

JO-

WV-i

l( T ^ Output

Input ^""T" I Z1

C6=

DUT

*C1

C5 i

CI. C2, C3 1-20 pF Johanson or Equivaleni

R2 10 Turns 10 kll
R3- 1.6 kll. 1/4 W

C4. C8 270 pF. 100 Mil Chip Cap

C5. C6 18 pF Mini-Unleco or Equivalent
C7 12 pF Mini-Unleco or Equivalent

RFC1 -

10 Turns. 0.300" ID 20 AWG

Enamel Closewound

C9 0.01 uF. 50 V Disc Ceramic

RFC2 -

CIO. CJ1, C13 0.1 pF. 50 V Disc Ceramic

C14 20 uF. 50 V
D1 1N5925A Motorola Zener

Z1
Z2
Z3
Z4

R1 10 kll. 1/4 W

Board Glass Teflon. 62 Mils. tr = 2 56

CI2. CI5 680 pF Feedthru

MOTOROLA RF DEVICE DATA

2-429

Ferroxcube VK-200 -

1.350" 0 250"
- 0.600" 0.250"
0 710" 0 250"
1 300" * 0.250"

19/4B

Microstrip
Microstrip
Microstrip
Microstrip

MRF163

FIGURE 2 OUTPUT POWER versus INPUT POWER

f = 100 MHz

I30

FIGURE 3 20

225 MHt

OUTPUT POWER versus INPUT POWER

f =100 MHi/

225 MHz

300 A

4UI MHz"

f J

g 15

300 MHt

400 MHi

Vqd = '35 V

Vnn = zb v

Iqq = 25 mA

3 ,0
5.0
0

1.0

0.5

2.0

1.5

2.5

2.0

Pin. INPUT POWER (WATTS)

FIGURE 4 -

OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 5 - OUTPUT POWER versus SUPPLY VOLTAGE

f = 400 MHz
40

3.0

Pin.INPUT POWER (WATTS)

f = 300 MHz
40

lOQ = 25 mA

i3o

>D | = 25m \

Pin= 1.5

o
a.

=3
CW

J '0

"""""oTw

. 22

FIGURE 6 -

Vdd. supply voltage ivoltsi

Vqd. SUPPLY VOLTAGE (VOLTS)

OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 7 -

OUTPUT POWER versus SUPPLY VOLTAGE

f = 225 MHz

f = 100 MHz

Iqq = 25 mA
ll 0 = 25 ( lA

-Pin=0

I 30

Pin=

0.5 W

0.25 t

t 20

Z 20

1
r

'5W
O

J 10
0

Vod. supply voltage ivoltsi

vod. supply voltage ivoltsi

MOTOROLA RF DEVICE DATA

2-430

MRF163

FIGURE 8 -

OUTPUT POWER versus GATE VOLTAGE

FIGURE 9 -

DRAIN CURRENT versus GATE VOLTAGE

(TRANSFER CHARACTERISTICS)
J.U

s
(2 20
f = 400 MH

"Pit

V OS= 28

V
Q= 25m \

Sg 15
o

= Consta itl

Shown. Vcsithl = 3.0 V

f 20

K
=3

Vds = 10 V

T rpica Dev

S down.

-5.0

Ves(ih) =30 V

/
0
-8.0

-6.0

-4.0

-2.0

2.0

6.0

Vqs-GATE-SOURCE VOLTAGE (VOLTS)

FIGURE 10 GATE-SOURCE VOLTAGE versus

FIGURE 11 -

CASE TEMPERATURE

1.02

ID = 125 A

180

1.0 A

160

i.oo

_750

^
~

0.98

B 120

* \ 5 30

1
Vf s = ov .
1 = 10 Pl/IHt

25 mA
00 mA-

V
20

0.92

-25

CAPACITANCE versus

i 80
o

0.94

vos = 28

2 100

5.0

Vs-

DRAIN-SOURCE VOLTAGE

200

3.0

VGS. GATE-SOURCE VOLTAGE (VOLTS)

100

125

150

175

Tc. CASE TEMPERATURE (C|

Vos. DRAIN-SOURCE VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-431

MRF163

FIGURE 12 -

DC SAFE OPERATING AREA

10
7.0
5.0

TC = 25C--

3.0

I 2.0

^iv
V.

S 1-0
CC

3 0.7
S

0.5

= 0.3
a

0.2

2.0

3.0

5.0

Vqs. DRAIN-SOURCE VOLTAGE (VOLTS)

FIGURE 13 -

INPUT AND OUTPUT IMPEDANCE

MOTOROLA RF DEVICE DATA

2-432

100

MRF163

FIGURE 14 -

COMMON SOURCE SCATTERING PARAMETERS

SO OHM SYSTEM

vDs =28 v. iD =0.5 a

Sll

(MHz)

S21

S12

S22

|S11I

IS21I

<t>

IS12I

/<*.

IS22I

2.0

0.985

-30

56.97

166

0.010

63.9

0.611

-36

0.875

-105

34.12

125

0.032

30.6

0.736

-116

0.841

-145

16.17

104

0.038

+9.2

0.798

-152

0.833

-162

8.201

92.7

0.038

+1.6

0.800

-165

0.836

-167

5.496

86.8

0.037

-2.5

0.802

-168

100

0.838

-170

4.121

82.3

0.039

-3.0

0.804

-170

125

0.838

-171

3.255

78.6

0.039

-5.8

0.809

-170

150

0.840

-172

2.718

74.3

0.037

-8.5

0.815

-171

175

0.844

-173

2.326

70.8

0.037

-9.6

0.819

-171

200

0.849

-173

2.027

67.2

0.036

-10.4

0.824

-171

225

0.851

-173

1.782

64.0

0.036

-10.3

0.833

-171

250

0.857

-173

1.593

60.9

0.034

-11.7

0.839

-171

275

0.862

-173

1.438

58.9

0.035

-11.1

0.844

-171

300

0.866

-173

1.319

55.6

0.033

-12.1

0.846

-170

325

0.872

-173

1.209

52.3

0.032

-12.7

0.861

-170

350

0.875

-173

.1.110

49.0

0.031

-13.4

0.873

-170

375

0.879

-173

1.030

46.7

0.031

-12.2

0.876

-170

400

0.882

-173

0.366

44.1

0.030

-14.6

. 0.883

-170

425

0.888

-173

0.904

41.3

0029

-13.4

0.888

-170

450

0.891

-173

0.836

39.4

0.028

-11.7

0.895

-170

475

0.893

-173

0.792

37.1

0027

-88

0902

-170

500

0.901

-173

0.748

35.2

0027

-6.1

0.911

-170

525

0.906

-173

0.715

32.4

0.025

-60

0.921

-170

550

0.911

-173

0.679

30.2

0.024

-6.0

0.928

-170

575

0.912

-173

0.637

28.7

0.024

-3.9

0.934

-170

600

0.913

-173

0.605

26.9

0.024

-1.0

0.939

-170

625

0.919

-174

0.579

25.3

0.024

1.0

0.947

650

0.921

-174

0.566

23.0

0.025

+10.1

0.961

-170

675

0.927

-174

0.540

22.6

0.025

12.1

0.963

-170

700

0.927

-174

0.510

19.9

0.025

+16.5

0.966

-170

725

0.927

-173

0.485

19.5

0.026

+23.1

0.967

-170

750

0.933

-174

0.481

17.4

0.026

+25.3

0.967

-170

775

J 0.937

-174

0.453

17.2

0.028

+28.0

0.976

-170

800

0.942

-174

0.448

16.8

0.030

+33.8

0.976

-170

MOTOROLA RF DEVICE DATA

2-433

MRF163

FIGURE 16 - Si2- REVERSE TRANSMISSION COEFFICIENT

FIGURE 15 - Sn- INPUT REFLECTION COEFFICIENT

versus FREQUENCY

VDS = 28 V. ID =0.5 A

VDS =28 V. ID =0.5 A

FIGURE 17 - S21. FORWARD TRANSMISSION COEFFICIENT

FIGURE 18 - S22- OUTPUT REFLECTION COEFFICIENT

versus FREQUENCY

VDS =28 V. ID =0.5 A

vDs =28 v. iD =0.5 a

MOTOROLA RF DEVICE DATA

2-434

MRF163

simple resistive divider network. Some applications may

DESIGN CONSIDERATIONS

The MRF163 is a RF power N-Channel enhancement

mode Vie\d-e1lect transistor (FET) designed especially for

require a more elaborate bias system.

UHF power amplifier and oscillator applications. Moto

GAIN CONTROL

rola RF MOS FETs feature a vertical structure with a

Power output of the MRF163 may be controlled from

planar design, thus avoiding the processing difficulties

associated with V-groove vertical power FETs.

its rated value down to zero (negative gain) by varying

Motorola Application Note AN-211A, FETs in Theory

and Practice, is suggested reading for those not familiar

the dc gate voltage. This feature facilitates the design of

manual gain control, AGC/ALC and modulation systems.
(See Figure 8.)

with the construction and characteristics of FETs.

The major advantages of RF power FETs include high

AMPLIFIER DESIGN

gain, low noise, simple bias systems, relative immunity

from thermal runaway, and the ability to withstand
severely mismatched loads without suffering damage.

Power output can be varied over a wide range with a low

power dc control signal, thus facilitating manual gain

Impedance matching networks similar to those used

with bipolar UHF transistors are suitable for the MRF163.

See Motorola Application Note AN-721, Impedance

Matching Networks Applied to RF Power Transistors. The

fore, does not conduct when drain voltage is applied.

Drain current flows when a positive voltage is applied to

higher input impedance of RF MOS FETs helps ease the

task of broadband network design. Both small signal scat
tering parameters and large signal impedances are pro
vided. While the s-parameters will not produce an exact
design solution for high power operation, they do yield
a good first approximation. This is an additional advan
tage of RF MOS power FETs.

the gate. See Figure 9 for a typical plot of drain current

versus gate voltage. RF power FETs require forward bias

unilateral. This, coupled with the very high gain of the

control, ALC and modulation.

DC BIAS

The MRF163 is an enhancement mode FET and, there

for optimum performance. The value of quiescent drain

current (Iqq) is not critical for many applications. The

MRF163 was characterized at Idq 25 mA, which is the

suggested minimum value of Iqq. For special applica

tions such as linear amplification, Iqq may have to be
selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current.
Therefore, the gate bias circuit may generally be just a

FIGURE 19 -

RF power FETs are triode devices and, therefore, not

MRF163, yields a device capable of self oscillation. Sta
bility may be achieved by techniques such as drain load

ing, input shunt resistive loading, or output to input feed

back. Two port parameter stability analysis with the
MRF163 s-parameters provides a useful tool for selection
of loading or feedback circuitry to assure stable opera
tion. See Motorola Application Note AN-215A for a dis
cussion of two port network theory and stability.

400 MHz TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-435

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF171

The RF MOSFET Line

45 W

N-CHANNEL MOS
BROADBAND RF POWER

N-CHANNEL ENHANCEMENT-MODE
RF POWER FIELD-EFFECT TRANSISTOR

FET

. . . designed primarily for wideband large-signal output and driver

stages in the 2,0-200 MHz frequency range.

2.0-200 MHz

Guaranteed Performance at 1 50 MHz. 28 Vdc

Output Power = 45 Watts

Minimum Gain = 12 dB

Efficiency = 50% (Min)

Facilitates Manual Gain Control. ALC and Modulation Techniques

100% Tested For Load Mismatch At All Phase Angles With

Excellent Thermal Stability, Ideally Suited for Class A Operation

30:1 VSWR

Low Noise Figure 1.5 dB Typ at 1.0 A, 150 MHz

STYLE 2
PIN 1 SOURCE
2 GATE

3 SOURCE
4 DRAIN

G O

MAXIMUM RATINGS

Symbol

Value

Unit

VDSS

Vdc

vdgr-

Vdc

vgs

-40

Vdc

Drain Current Continuous

4.5

Adc

Total Device Dissipation @ Tc = 25C

Rating
Drain-Source Voltage
Drain-Gate Voltage

Gate-Source Voltage

Operating Junction Temperature

Thermal Resistance, Junction to Case

NOTES.
1 DIMENSIONING ANDTOLEHANClNG PER
ANSIYI4 5M. 1982

2 CONTROLLING DIMENSION INCH

115

Watts
W/C
MM

MIN

VAX

MIN ' MAX

Tstg

-65 to *150

A
B

2439
940

2514

3 960

0990 1

990

0390

200

C
D
E

582
547

713

D229

::;

2.16

:;;

381

266
4 57

0215
0085

0.11

015

0 M4

C006

10 M

1028

0 255

0 405

THERMAL CHARACTERISTICS
Characteristic

066

Derate above 25C

Storage Temperature Range

iumc

Symbol

RflJC

Max
1.52

Unit

C/W

RqS= 1.0 Mn

Handling and Packaging MOS devices are susceptible to damage from electrostatic
charge. Reasonable precautions in handling and packaging MOS devices should bo
observed.

INCHES

MILLIMETERS

S
U

SO'

0 153

40'

2-436

2 ISO

50*

283

330

an?

3 130

623

647

0245

325!

20 07

2057

0 '50

08IC1

IS 25

1854

0720

0730

CASE 211-07

MOTOROLA RF DEVICE DATA

0 22!

"**

MRF171

ELECTRICAL CHARACTERISTICS (Tc=25C unlessotherwisenoted)

Symbol

Min

V(BR)DSS

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Vdc

|Vqs = 0, lD= 10 mA)

Zero Gate Voltage Drain Current

dss

5.0

mAdc

1.0

fiAdc

6.0

Vdc

|VDS=28V,Vgs = 0)
Gate-Source Leakage Current
(VGs = 20V,V0S = 0)

gss

ON CHARACTERISTICS

Gate Threshold Voltage

vGS(th)

1.0

3.0

91s

0.7

1.1

(Vqs = 10 V, Iq = 25 mA)
Forward Transconductance

mhos

(VDS=10V,Id=1.0A)
DYNAMIC CHARACTERISTICS

Input Capacitance

Cjss

(VDS= 28 V, Vqs = 0, f = 1.0 MHz)

Output Capacitance

Coss

(VDs = 28 V, Vqs = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

Crss

(vDs =28 v. Vqs =o, f = 1.o mhz)

FUNCTIONAL CHARACTERISTICS

Noise Figure

1.5

(Vos = 28 Vdc, Id = 1 0 A. *= 150 MHz)

Common Source Power Gain (Figure 1)

GpS

(Vdd = 28 Vdc. Pout = 45 W, f = 150 MHz. Idq = 25 mA)

Drain Efficiency (Figure 1)

(Vdd = 28 Vdc, Pout = 45 W. f = 150 MHz, Idq = 25 mA)

Electrical Ruggedness (Figure 1)

No Degradation ir Output Power

i!i

(Vdd = 28 Vdc. P0ut = 45 W. f = 150 MHz, Ido. = 25 mA.

VSWR 30:1 at all Phase Angles)
FIGURE 1 -

150 MHz TEST CIRCUIT

RFC2

R3
WV

Bias

^p p^C12

Adjust

"A/WrAt r
C16
pL.C13 1C14 C15

|R1

"TC17

?feC9

>5-)|

VDD=28V

Input

tw>-n_
L1

?^C1

CI. C6, C7 1.0-20 pF Johanson

C2, C4, C5. C8 63 pF ATC Chip (100 mils)
C3. CIO. CI8 680 pF ATC Chip (100 mils)
C9 12 pF ATC Chip (100 mils)
C11. C13, C14, C17 - 0.1 pF Erie Redcap. 50 V
C12 25MF.50V
C15, CI 6 680 pF Feedthru

L3 1-1/4 Turns. #18 AWG, 0.21" ID

L4 2 Turns, #18 AWG. 0.23" ID, 0.15" Long

RFC1 20 Turns, #20 AWG Enameled, 0.3" ID,
Close Wound

RFC2 15 Turns. #20 AWG Enameled on 2.0 W.

10 n Resistor

R1 10 kn, 10 Turns Helipot 7216-R10K-L.25

01 1N5925A Motorola Zener

R2 10 Ml. 1/4 W
R3 1.8 Wl. 1/2 W
R4-47n. 1/2 W

L1 2 Turns, #18 AWG. 0.3' ID, 0.3' Long

L2 1-1/4 Turns. #18 AWG. 0.21" ID

MOTOROLA RF DEVICE DATA

2-437

MRF171

FIGURE 2 -

FIGURE 3 -

OUTPUT POWER versus INPUT POWER

100MM:/

150 MHr^

200 MrLt

i 'u

' /

zrz"

1 '0

'DO = 25

/ Yz

2.0

3.0

4.0

1.0

FIGURE 4 -

2.0

4 0

Pln. INPUT POWER IWATTS)

Pm. INPUT POWER (WATTS)

FIGURE 5 -

OUTPUT POWER versus SUPPLY VOLTAGE

f = 150 MHz

f 100 MHi

'DQ= 25

2 0W,

I ow

v0D. supply voltage ivoltsi

FIGURE 6 -

Vrjrj. SUPPLY VOLTAGE (VOLTS)

OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 7 -

POWER GAIN versus FREQUENCY

f = 200 MHz
2b

= 45

l0Q =

25 mA

= 28\

Pin = 4 0W^

\
V

Mty,

2.0 W

I 40
S

o
*

10
"

1 30

1 U

1 40

1 0

I. FREQUENCY |MHr|

VrjQ. SUPPLY VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-438

1 0

2 0

220

MRF171

FIGURE 8 -

OUTPUT POWER versus GATE VOLTAGE

FIGURE 9 - DRAIN CURRENT versus GATE VOLTAGE

(TRANSFER CHARACTERISTICS)

blh

/
f= 150 MHz

' Pjn= Consttnt'

Iqq - 25 mA
Vod= 28 V

30
o

| 20

Typical OavtceS lawn

VGS(th) = 3.0V

o? 10

-8 0

"% 0

-4 0

-2 0

()

2.0

2.0
3.0
4!0
5"0
670
Vgs- GATE-SOURCE VOLTAGE (VOLTS)

6.0

Vgs. GATE-SOURCE VOLTAGE (VOLTS)

FIGURE 10 -

FIGURE 11 CAPACITANCE versus

GATE-SOURCE VOLTAGE versus

DRAIN VOLTAGE

CASE TEMPERATURE
1.2

VQfJ

8.0

200

1.1

Vfi 5 = 0 V
f = 1.0 f /IHz

ID= 15 A
150
1.0 A

\
\

100

coss

15mA .
50

*"**
0.7
-25

100

125

150

8 0

4 0

175

V0s.DRAIN-SOURCE VOLTAGE (VOLTS)

TC. CASE TEMPERATURE (C)

FIGURE 12 -

DC SAFE OPERATING AREA

tc =25c:

1.0

2.0

3.0

5.0 7.0

vds. drain-source voltage (vdltsi

MOTOROLA RF DEVICE DATA

2-439

T"
24

MRF171

FIGURE 13 COMMON SOURCE SCATTERING PARAMETERS

VDS = 28 V. ID = O.B A
S21

S11

S22

S12

IS21I

|Sl2J

<t>

|S22)

-50

72.4

153

0.014

0.674

-59

(MHz)

ism

2.0

0.966

5.0

0.891

-97

50.8

128

0.025

0.757

-109

0.841

-132

30.1

110

0.030

0.801

-141

0.821

-155

15.9

0.032

0.818

-160

0.817

-162

10.7

0.032

0.822

-166

0.816

-167

8.06

0.032

0.823

-169

0.816

-169

6.45

0.032

0.825

-171

0.816

-171

5.37

0.032

0.826

-172

0.816

-172

4.60

0.032

0.828

-173

0.816

-172

4.01

0.032

0.829

-174

0.816

-173

3.56

0.033

0.830

-174

100

0.816

-173

3.15

0.034

0.832

-174

110

0.816

-173

2.85

0.035

0.832

-175

120

0.816

-173

2.59

0.036

0.832

-175

130

0.817

-174

2.40

0.036

0.832

-175

140

0.817

-174

2.23

0.037

0.834

-175

150

0.820

-174

2.09

0.037

0.835

-175

160

0.823

-174

1.97

0.037

0.836

-175

170

0.825

-175

1.85

0.037

0.839

-175

180

0.826

-175

1.75

0.037

0.840

-175

190

0.829

-175

1.66

0.037

0.843

-175

200

0.832

-175

1.59

0.038

0.845

-175

250

0.844

-176

1.24

0.039

0.856

-175

300

0.855

-176

1.02

0.042

0.867

-174

350

0.862

-177

0.88

0.047

0.878

-174

400

0.868

-178

0.76

0.052

0.885

-174

450

0.873

-179

0.67

0.059

0.897

-174

500

0.907

+179

0.63

0.067

0.892

-175

MOTOROLA RF DEVICE DATA

2-440

MRF171

FIGURE V4-Sn. INPUT REFLECTION COEFFICIENT

FIGURE 15 - S12. REVERSE TRANSMISSION COEFFICIENT

versus FREQUENCY

VDS = 28V

lD = 0.5A

VDS = 28V

lD = 0.5A

|50

FIGURE 16 - 621 FORWARDTRANSMISSION COEFFICIENT

FIGURE 17 S22. OUTPUT REFLECTION COEFFICIENT

versus FREQUENCY

VDS = 28V

versus FREQUENCY

lD = 0.5A

VDS = 28V
j50

180

MOTOROLA RF DEVICE DATA

2-441

lD 0.5 A

MRF171

DESIGN CONSIDERATIONS

The MRF171 is a RF power N-Channel enhancement

mode field-effect transistor (FET) designed especially for

UHF power amplifier and oscillator applications. Moto

simple resistive divider network. Some applications may

require a more elaborate bias system.
GAIN CONTROL

rola RF MOS FETs feature a vertical structure with a

Power output of the MRF171 may be controlled from

planar design, thus avoiding the processing difficulties

its rated value down to zero (negative gain) by varying

associated with V-groove vertical power FETs.

the dc gate voltage. This feature facilitates the design of

manual gain control, AGCALC and modulation systems.

Motorola Application Note AN-211A, FETs in Theory

and Practice, is suggested reading for those not familiar

(See Figure 8.)

with the construction and characteristics of FETs.

The major advantages of RF power FETs include high

The MRF171 is an enhancement mode FET and, there

fore, does not conduct when drain voltage is applied.

current Odq) is not critical for many applications. The

MRF171 was characterized at Iqq 25 mA, which is the
suggested minimum value of Iqq. For special applica
tions such as linear amplification, Iqq may have to be
selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current.

Therefore, the gate bias circuit may generally be just a

AMPLIFIER DESIGN

Impedance matching networks similar to those used

with bipolar UHF transistors are suitable for the MRF171.
See Motorola Application Note AN-721, Impedance
Matching Networks Applied to RF Power Transistors. The
higher input impedance of RF MOS FETs helps ease the
task of broadband network design. Both small signal scat
tering parameters and large signal impedances are pro
vided. While the s-parameters will not produce an exact
design solution for high power operation, they do yield
a good first approximation. This is an additional advan
tage of RF MOS power FETs.
RF power FETs are triode devices and, therefore, not

unilateral. This, coupled with the very high gain of the

MRF171, yields a device capable of self oscillation. Sta
bility may be achieved by techniques such as drain load

ing, input shunt resistive loading, or output to input feed

back. Two port parameter stability analysis with the

MRF171 s-parameters provides a useful tool for selection

of loading or feedback circuitry to assure stable opera
tion. See Motorola Application Note AN-215A for a dis
cussion of two port network theory and stability.

FIGURE 18 150 MHz TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-442

MRF171

RGURE 19 LARGE-SIGNAL SERIES EQUIVALENT

INPUT/OUTPUT IMPEDANCE

MOTOROLA RF DEVICE DATA

2-443

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF172

The RF MOSFET Line

80 W

N-CHANNEL MOS
BROADBAND RF POWER

N-CHANNEL ENHANCEMENT-MODE
RF POWER FIELD-EFFECT TRANSISTOR

. . . designed primarily for wideband large-signal output and driver

FET

stages in the 2.0-200 MHz frequency range.

2.0-200 MHz

Guaranteed Performance at 150 MHz, 28 Vdc

Output Power = 80 Watts
Minimum Gain = 10 dB

Efficiency = 50% (Min)

Excellent Thermal Stability, Ideally Suited for Class A Operation

Facilitates Manual Gain Control, ALCand Modulation Techniques

100% Tested For Load Mismatch At All Phase Angles With

30:1 VSWR

Low Noise Figure 1.5 dB Typ at 2.0 A. 150 MHz

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain Source Voltage

VDSS

Vdc

Drain Gate Voltage

VdGR

Vdc

vgs

Vdc

9.0

Adc

220

Watts

1.26

W/C

Tstg

-65 to* 150

200

<RGS=1.0MO.)
Gate Source Voltage
Drain Current Continuous

Total Device Dissipation @ Tfj = 25C

Derate above 25C

Storage Temperature Range

Operating Junction Temperature

1 DIMENSIONING ANDTOLERANONG PER

Thermal Resistance, Junction to Case

ANSIV14SM, 1982

2 CONTROLLING DIMENSION INCH

THERMAL CHARACTERISTICS
Characteristic

NOTES

Symbol

Max

Unit

Rojc

0.80

C/W

MILLIMETERS
DIM

MIN

MAX

INCHES
MIN
MAX>

::i-

25 ::

. ~:

ns:

1295

0465

::-:

C
D
E

582

698
596
2 79

0 229
0216

0275

Reasonable precautions in handling and packaging MOS devices should be observe i.

: u

366

452

0.08

017

1105

Handling and Packaging MOS devices are susceptible to damage trom electr static charge.

549

uCiJ
0144
0 003

2-444

0235
0110
0007

0435
45' NOM
_

0115

45 NOM
293
3 30
625
647

0 246

0255

1854

:?;:

: :::

CASE 211-11

MOTOROLA RF DEVICE DATA

0990

0130

MRF172

ELECTRICAL CHARACTERISTICS (Tc= 25Cunlessotherwisenoted)

Characteristic

Symbol

Min

VjBRJDSS

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Vdc

lVGS = 0.lD=50mA)
Zero Gate Voltage Drain Current
(VDS=28V,VGs = 0)

dss

Gate-Source Leakage Current

>GSS

5.0

mAdc

1.0

pMc

6.0

Vdc

(VGS= 20 V, V0S = 0)
ON CHARACTERISTICS

Gate Threshold Voltage

vGS(th)

1.0

3.0

9fs

1.2

1.8

(Vos = 10 V. ID= 50 mA)

Forward Transconductance

mhos

(vDs = iov. Id = 2.0 A)

DYNAMIC CHARACTERISTICS

Cjs8

Input Capacitance

100

135

1.5

(VDs = 28 V. Vqs = 0. f = 1.0 MHz)

Output Capacitance
(Vds = 28 V. Vqs = 0. f = 1.0 MHz)

Coss

Reverse Transfer Capacitance

Crss

(Vqs = 28 V. Vqs = 0. f = 1.0 MHz)

FUNCTIONAL CHARACTERISTICS (Figure 1)
Noise Figure

(VDd = 28 Vdc. ID= 2.0 A. f = 150 MHz)

Common Source Power Gain

Gps

12.3

(Vdd = 28 Vdc. P0ut = 80 W. f = 150 MHz, lDQ = 50 mA)

Drain Efficiency

(Vdd = 28 Vdc, P0ut = 80 W, f = 150 MHz. Idq = 50 mA)

Electrical Ruggedness

No Degradation n Output Power

(Vod = 28 Vdc. Pout = 80 W. f = 150 MHz. Idq = 50 mA.

VSWR 30:1 at all Phase Angles)
FIGURE 1 -

150 MHz TEST CIRCUIT

Vdd1 28v
Bias

Adjust

R3 Lc9 1C10|

WV*

-1 TT:"!

RFInput >

RF Output

L1 #16AWG. 1-1/4 Turns, 0.213" ID

CI 26 pF Unleco
C2, C5. C7 Arco 462. 5-80 pF
C3 100 pF Unleco

L2 #16 AWG, Hairpin _/l_T 25"

L3 - #14 AWG. Hairpin"" ^62" -HAT047'

K-0.2'

C4 40 pF Unleco
C6 60 pF Unleco
C8 Arco 463. 9-180 pF
C9, C11, CI 4 0.1 fiF Erie Redcap
C10-50MF.S0V
CI2. CI3 680 pF Feedthru

L4 10 Turns #16 AWG Enameled Wire on R1

RFC1 18 Turns #16 AWG Enameled Wire. 0.3" ID

ri "ion. 2.0 W
R2 1.8.kn,1/2W
R3 10 kfl, 10 Turn Bourns
R4 10 kn, 1/4 W

D1 1N6925A Motorola Zener

MOTOROLA RF DEVICE DATA

2-445

MRF172

FIGURE 3 -

FIGURE 2 OUTPUT POWER versus INPUT POWER

OUTPUT POWER versus INPUT POWER

I4U

Ji --

100 M

120

100 MHz
60

150 MHz^

too
150 M *t
n ,-^
r
^

/ /
A y/*'

u
r

200 M

Vnu = 28V
Iqq = 50 mA

2!5

ifo

V0D= 13.5 V
Iqq = 5u mA

1
2.0

FIGURE 4 -

6.0

4.0

Pin. INPUT POWER (WATTS)

8.0

1
14

Pjr, INPUT POWER IWATTS)

FIGURE 6 -

OUTPUT POWER versus SUPPLY VOLTAGE

f= 150 MHz

f= 100 MHz
140

120

Pm= 4.0W

iqq = 50n
100

3.0 W

P.n= 8.0

iqq = 50n
100

6.0 W

2.0 W

4.0 W

LOW

2.0 W-

n
i0

2 )

Vqo. SUPPLY VOLTAGE (VOLTS)

Vgo. SUPPLY VOLTAGE (VOLTS)

FIGURE 6 OUTPUT POWER versus SUPPLY VOLTAGE

f = 200 MHz

FIGURE 7 POWER GAIN versus FREQUENCY

120
.

= 50n

Pin =

100
10W

8.0 W

4.0 W

Von. SUPPLY VOLTAGE (VOLTS)

100

120

140

f. FREQUENCY (MHt)

MOTOROLA RF DEVICE DATA

2-446

160

180

200

220

MRF172

FIGURE 9 DRAIN CURRENT versus GATE VOLTAGE

FIGURE 8 - OUTPUT POWER versus GATE VOLTAGE

(TRANSFER CHARACTERISTICS)
80

1
1= 150 MHz

Pin=
fc

lorstint

% = 28 V
'00 = 50 mA

5.0

4.0

/
f

[=1(

a 50

Typic. lOevice Show ti.VGsth)=3.0V

I 40

, TypicalDeviceShown, Vgsi

h)=3.0V.

| 30
2.0

3 20
a?
10

- 4

-12

-10

-8.0 -6.0

-4.0

-2.0

2.0

4.0

6.0

1.0

2.0

3.0

4.0

5.0

vGs. gate-source voltage (volts)

Vgs. GATE-SOURCE VOLTAGE (VOLTS)

FIGURE 10 GATE-SOURCE VOLTAGE versus

FIGURE 11 -

CASETEMPERATURE

CAPACITANCE versus

DRAIN VOLTAGE

vos

= 28V

i = 0V

In = 3.0 A

1.0

2 400

io= 1.0 A

500 mA
,^^

3 300
u

0 mA

200

.^OM

s^iss

0.8
100

v is*"""

0.7
25

100

125

150

4.0

175

Tc. CASE TEMPERATURE (C)

8.0

FIGURE 12 -

DC SAFE OPERATING AREA

50
</>

Tc = 25C

3 i.o
<

Vgs. DRAIN-SOURCE VOLTAGE (VOLTS)

6.0

vos. DRAIN-SOURCE VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-447

100

MRF172

FIGURE 13 -

COMMON SOURCE SCATTERING PARAMETERS

VDS = 28 V, lD =2.0 A
S11

' (MHz)

S21

S3 2

Sl2

ism

IS21I

l<t>

|S12I

|S22J

2.0

0.928

-112

87.5

122

0.013

0.776

-128

5.0

0.902

-149

40.5

104

0.015

0.857

-158

0.897

-164

20.7

0.016

0.872

-169

0.896

-172

10.4

0.016

0.876

-174
-176

0.896

-175

6.94

0.016

0.877

0.896

-176

5.20

0.017

0.878

-177

0.897

-177

4.15

0.017

0.879

-177

0.897

-177

3.45

0.017

0.880

0.898

-178

2.95

0.018

0.881

-177

0.899

-178

2.57

0.019

0.882

-177
-177

0.901

-178

2.27

0.020

0.883

100

0.903

-178

2.00

0.021

0.885

-177

110

0.905

-178

1.80

0.022

0.887

-177
-177

120

0.907

-178

1.62

0.024

0.888

130

0.908

-178

1.51

0.026

0.895

-177

140

0.909

-178

1.39

0.027

0.895

-177

150

0.910

-178

1.30

0.028

0.895

-177

160

0.911

-178

1.22

0.029

0.897

-177

170

0.912

-179

1.14

0.030

0.899

-177

180

0.921

-179

1.08

0.032

0.900

-177
-177

190

0.921

-179

1.01

0.033

0.903

200

0.922

-179

0.974

0.035

0.905

-177

210

0.920

-179

0.928

0.036

0.907

-176
-176

220

0.915

-179

0.872

0.038

0.907

230

0.915

-179

0.828

0.040

0.914

-176

240

0.917

-179

0.793

0.042

0.917

-176

250

0.922

-179

0.772

0.044

0.918

-176

260

0.927

+179

0.744

0.046

0.920

-176

270

0.928

+179

0.714

0.048

0.920

-176

280

0.929

+179

0.689

0.049

0.923

-176

290

0.929

+179

0.662

0.051

0.923

-176

300

0.938

+179

0.642

0.053

0.923

-176

MOTOROLA RF DEVICE DATA

2-448

MRF172

FIGURE 14 - S-i 1, INPUT REFLECTION COEFFICIENT

FIGURE 16 - Si 2- REVERSE TRANSMISSION COEFFICIENT

versus FREQUENCY

VDS = 28V

versus FREQUENCY

lD = 2.0A

VDS = 28 V

+iS0

FIGURE 16 - S21. FORWARD TRANSMISSION COEFFICIENT

FIGURE 17 - S22. OUTPUT REFLECTION COEFFICIENT

versus FREQUENCY

Vqs = 28 V
*\Vfi^

versus FREQUENCY

lD = 2.0 A

90
*30 MHz

VDS = 28 V
j50

600

J 150 MHlN

+150/

\+30

- 100 MHz,

5J 4( 3[ 2[V^

150 MHii

.300 MHz

J-VP

-150 \

-20v*'

lD = 2.0 A
90

"-60O

MOTOROLA RF DEVICE DATA

2-449

lD = 2.0 A

MRF172

DESIGN CONSIDERATIONS

The MRF172 is a RF power N-Channel enhancement

mode field-effect transistor (FET) designed especially for

suggested minimum value of Iqq. For special applica

tions such as linear amplification, Iqq may have to be
selected to optimize the critical parameters.

UHF power amplifier and oscillator applications. Moto

The gate is a dc open circuit and draws no current.

rola RF MOS FETs feature a vertical structure with a

Therefore, the gate bias circuit may generally be just a

planar design, thus avoiding the processing difficulties

associated with V-groove vertical power FETs.

simple resistive divider network. Some applications may

require a more elaborate bias system.

Motorola Application Note AN-211A, FETs in Theory

and Practice, is suggested reading for those not familiar

GAIN CONTROL

with the construction and characteristics of FETs.

Power output of the MRF172 may be controlled from

its rated value down to zero (negative gain) by varying
the dc gate voltage. This feature facilitates the design of
manual gain control, AGC/ALC and modulation systems.
(See Figure 8.)

The major advantages of RF power FETs include high

gain, low noise, simple bias systems, relative immunity
from thermal runaway, and the ability to withstand

severely mismatched loads without suffering damage.

Power output can be varied over a wide range with a low

power dc control signal, thus facilitating manual gain

AMPLIFIER DESIGN

Impedance matching networks similar to those used

control, ALC and modulation.

DC BIAS

The MRF172 is an enhancement mode FET and, there

fore, does not conduct when drain voltage is applied.

current (Idq) is not critical for many applications. The

MRF161 was characterized at Iqq = 50 mA, which is the

with bipolar UHF transistors are suitable for the MRF172.

See Motorola Application Note AN-721, Impedance
Matching Networks Applied to RF Power Transistors. The
higher input impedance of RF MOS FET's helps ease the
task of broadband network design. Both small signal scat
tering parameters and large signal impedances are pro
vided. While the s-parameters will not produce an exact
design solution for high power operation, they do yield
a good first approximation. This is an additional advan
tage of RF MOS power FETs.

FIGURE 18-150 MHz TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-450

MRF172

FIGURE 19 - SERIES EQUIVALENTINPUTIMPEDANCE.Z,,

FIGURE 20 - SERIES EQUIVALENT OUTPUTIMPEDANCE. ZQL*

MOTOROLA RF DEVICE DATA

2-451

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF174

The RF MOSFET Line

125 W

2.0-200 MHz

N-CHANNEL MOS
BROADBAND RF POWER

N-CHANNEL ENHANCEMENT-MODE

RF POWER FIELD-EFFECT TRANSISTOR

FET

. . . designed primarily for wideband large-signal output and driver

stages in the 2.0-200 MHz frequency range.

Guaranteed Performance at 150 MHz, 28 Vdc

Output Power = 125 Watts
Minimum Gain = 9.0 dB

Efficiency = 50% (Min)

Excellent Thermal Stability, Ideally Suited for Class A Operation

Facilitates Manual Gain Control, ALC and Modulation Techniques

100% Tested For Load Mismatch At All Phase Angles With

30:1 VSWR

Low Noise Figure 3.0 dB Typ at 2.0 A. 1 50 MHz

D o

STYLE 2
PIN 1 SOURCE
2 GATE
3 SOURCE
4 DRAIN

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain Source Voltage

VDSS

Vdc

Drain Gate Voltage

VDGR

Vdc

SUIWG

|RGs= 10 Mil)
Gate Source Voltage

vqs

: 40

Vdc

Drain Current Continuous

Adc

Total Device Dissipation @ Trj = 25C

270

Watts

1.54

W/C

Tstg

-65 to* 150

200

Derate above 25C

Storage Temperature Range

Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

RflJC

0.65

C/W

Handling and Packaging MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.

NOTES

1 DIMENSIONING ANDTOLERANONG PER

ANSIY14.5M.1982
2 CONTROLLING DIMENSION INCH
MILLIMETERS

INCHES

DIM

MIN

MAX

MIN

MAX

::-

2S14

: 9?:

1182

0465

":':

:S.-

1295
698

D
E

549

595

;::

214

2 79

3 084

0110

452

: 144

0178

J
K

o r-:-3

OKI

11 OS

008

017
_

293

330

R
U

15:9

IBM

NOV
647

0 229

2-452

::-:

0435
45" NOM
_

0115

. ;.

0 .-46
:::

CASE 211-11

MOTOROLA RF DEVICE DATA

:;;-

0 730

MRF174

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted)

| Symbol

Characteristic

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

V(BR)DSS

Vdc

lVGS = 0.tD=50mA)
Zero Gate Voltage Drain Current

dss

mAdc

1.0

tiAdc

6.0

Vdc

(VDS= 28 V. Vqs = 0)
Gate-Source Leakage Current

IQSS

(vGs =20v. vDs =o>

ON CHARACTERISTICS

Gate Threshold Vottage

(vDs = lov, iD= 100 mA)

VGS(th)

1.0

3.0

flfs

1.75

2.5

175

230

3.0

Forward Transconductance

mhos

(VDs=10V.ID=3.0A)
DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

(VDS= 28 V. VGS = 0. i = 1.0 MHz)

Output Capacitance

Coss

(VDS= 28 V. Vqs = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

Crss

(Vos = 28 V. Vqs = 0. f = 1.0 MHz)

FUNCTIONAL CHARACTERISTICS (Figure 1)
NF

Noise Figure

(VDd = 28 Vdc, lD= 2.0 A1 = 150 MHz)

Common Source Power Gain

GpS

9.0

11.8

(Vod = 28 Vdc, Pout = 125 W, f = 150 MHz, Idq = 100 mA)

Drain Efficiency

(VDD = 28 Vdc, Pout = 125 W, f = 150 MHz. IDQ = 100 mA)

Electrical Ruggedness

No Degradation in Output Power

<!>

(VDd= 28 Vdc. Pout = 125 W, f = 150 MHz. IDQ= 100 mA.

VSWR 30:1 at all Phase Angles)

FIGURE 1 -

1 BO MHz TEST CIRCUIT

vDd = 28 V

C12 f ^ C13
Bias

Adjust

R3 Lc9 !cio|

?p ^

D\ i2

1J_C14

?pC11

jrf

RFInput >

< RF Output

LI #16 AWG. 1-1/4 Turns. 0.213-ID

CI 35 pF Unleco
C2. C5 Arco 462. 5-80 pF
C3 100 pF Unleco
C4 26 pF Unleco
C6 40 pF Unleco
C7-Arco 461. 2.7-30 pF
C8 Arco 463. 9-180 pF
C9, C11. CI 4 0.1 /iF Erie Redcap

L2 #16 AWG, Hairpin _/T_~E0-25"

L3-#14 AWG. Hairpin^ ^62" -HAT*"'

1 0.2L4 10Turns#16 AWG Enameled Wire on R1
RFC1 18 Turns #16 AWG Enameled Wire, 0.3' ID
ri ion. 2.0 W
R2 1.8kn,1/2W

CIO 50i*F.50V

R3 10 kn. 10 Turn Bourns

R4 10 Ml, 1/4 W

CI 2. CI 3 680 pF Feedthru
D1 1N5926A Motorola Zener

MOTOROLA RF DEVICE DATA

2-453

MRF174

FIGURE 2 -

FIGURE 3 -

OUTPUT POWER versus INPUT POWER

80l
_

.'Twimmt

100 ""

~^200MHi

| 50

x.y
<y

J 20
4.0

6.0

8.0

_vdd = 13.SV
l00 - 100 mA

,10

2.0

4.0

6.0

Pjn.INPUT POWEB (WATTS)

8.0

Pin.INPUT POWER (WATTS)

FIGURE 4 OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 6 OUTPUT POWER versus SUPPLY VOLTAGE

f= 100 MHz

f = 150 MHz

160
140

Pin = 6.0

|QQ =

\lf~^

00 mA

'00 =

120

.n= I2ffi^

00 mA

4.0W^-

2.0

8.0

&-*

4.0 W^

Vod. supply voltage ivoltsi

Vod. supply voltage (volts)

FIGURE 6 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 7 -

f= 200 MHz

POWER GAIN versus FREQUENCY

140

"DQ =

00 mA

in=l61

120

1.100
^

I 80

vdd. supply voltage (voitsj

100

120

140

f. FREQUENCY (MHt)

MOTOROLA RF DEVICE DATA

2-454

160

180

200

220

MRF174

FIGURE 9 DRAIN CURRENT versus GATE VOLTAGE

FIGURE 8 -

(TRANSFER CHARACTERISTICS)

OUTPUT POWER versus GATE VOLTAGE

VU s = io

4.0

2.0

Typical Device Shown, Vqs th)=3.0V

Typical Device Shown. Vos(th) - 3.0V

-14 -12 ^10 -8.0 -8.0 -4.0 -2.0

tfi t$

2.0

1.0

Vqs. GATE-SOURCE VOLTAGE (VOLTS)

3.0

4.0

5.0

VGS. GATE-SOURCE VOLTAGE (VOLTS)

FIGURE 11 -

FIGURE 10 GATE-SOURCE VOLTAGE versus

CASE TEMPERATURE

CAPACITANCE versus

DRAIN VOLTAGE
1000

VDD = 28

= 4.0 A

3.0 A
2.I A

""--J1
0.8
-25

100

125

0 mA

150

175

8.0

FIGURE 12 -

DC SAFE OPERATING AREA

1 6.0

\
,t

g 4.0

.5(

VDS. DRAIN-SOURCE VOLTAGE (VOLTS)

T& CASE TEMPERATURE (C)

1.0
0.6
0.4
0.2

2.0

4.0

Vds. DRAIN-SOURCE VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-455

100

MRF174

FIGURE 13 COMMON SOURCE SCATTERING PARAMETERS

VDS =28 V. ID =3.0 A

S21

Sl2

S22

(MHz)

ism

IS21I

1^12)

IS22I

2.0

0.932

-133

74.0

112

0.011

0.835

-151

5.0

0.923

-160

31.6

0.011

0.886

-168

0.921

-170

16.0

0.011

0.896

-174

0.921

-175

8.00

0.011

0.899

-177

0.921

-177

5.32

0.011

0.900

-178

0.921

-177

3.98

0.012

0.901

-178

0.922

-178

3.17

0.012

0.902

-178

0.923

-178

2.63

0.012

0.903

-178

0.924

-178

2.24

0.013

0.904

-178

0.925

-178

1.95

0.013

0.906

-178

0.927

-178

1.72

0.014

0.907

-178

100

0.930

-178

1.50

0.016

0.910

-178

110

0.930

-178

1.31

0.018

0.912

-178

120

0.931

-178

1.19

0.019

0.914

-178

130

0.942

-178

1.10

0.019

0.919

-178

140

0.936

-178

1.01

0.021

0.921

-178

150

0.938

-178

0.936

0.021

0.922

-178

160

0.938

-178

0.879

0.022

0.923

-178

170

0.940

-178

0.830

0.023

0.923

-177

180

0.942

-178

0.780

0.024

0.924

-177

190

0.942

-178

0.737

0.026

0.928

-177

200

0.952

-178

0.705

0.027

0.929

-177

210

0.950

-178

0.668

0.029

0.934

-177

220

0.942

-178

0.626

0.030

0.933

-177

230

0.943

-178

0.592

0.032

0.939

-177
-177

240

0.946

-177

0.566

0.033

0.941

250

0.952

-177

0.545

0.035

0.943

-177

260

0.958

-177

0.523

0.036

0.946

-177

270

0.956

-177

0.500

0.038

0.943

-177

280

0.960

-177

0.481

0.039

0.946

-177

290

0.956

-178

0.460

0.042

0.944

-177

300

0.955

-178

| 0.443 |

0.043

0.947

-177

MOTOROLA RF DEVICE DATA

2-456

MRF174

FIGURE 15 - S12. REVERSE TRANSMISSION COEFFICIENT

FIGURE 14 - S-i -i. INPUT REFLECTION COEFFICIENT

versus FREQUENCY

VDS =28 V

VDS =28V

lD = 3.0 A

lD =3.0A

120^-

--Zr^sLso0

tU 300 MHz

zrw \

rH250 MHzf\

150*/

Nf\A\\

--Jf200 MHzvVN 30

>s*15'0MHz.'W

03(^02] "^

05 1 ru

^lOOMHzYjJt
CkSO MHz\-T\
30 MHz

-15oV\

3Q0

-120\^

FIGURE 16 - S21. FORWARDTRANSMISSION COEFFICIENT

FIGURE 17 - S22< OUTPUT REFLECTION COEFFICIENT

versus FREQUENCY

VDS =28 V

lD =3.0 A

+1200^-^r^H rt30 MHz

IJ^MHzOOA+30'

+150/.

TfiogMHz>A >
7*150 MHz \ VA-

,5 / 4 (3

(HHji gJOOMHzfT,

J^<&fi

| |

150V\

III0

/-30"

-120^\I^" ~\^y$>

MOTOROLA RF DEVICE DATA

2-457

lD =3.0 A

MRF174

DESIGN CONSIDERATIONS

the suggested minimum value of Iqq. For special appli

cations such as linear amplification, Iqq may have to be

The MRF174 is a RF power N-Channel enhancement

mode field-effect transistor (FET) designed especially for
UHF power amplifier and oscillator applications. Moto

selected to optimize the critical parameters.

The gate is a dc open circuit and draws no current.

rola RF MOS FETs feature a vertical structure with a

Therefore, the gate bias circuit may generally be just a

simple resistive divider network. Some applications may

planar design, thus avoiding the processing difficulties

associated with V-groove vertical power FETs.

require a more elaborate bias system.

Motorola Application Note AN-211A, FETs in Theory

and Practice, is suggested reading for those not familiar

GAIN CONTROL

with the construction and characteristics of FETs.

Power output of the MRF174 may be controlled from

its rated value down to zero (negative gain) by varying
the dc gate voltage. This feature facilitates the design of

The major advantages of RF power FETs include high

gain, low noise, simple bias systems, relative immunity
from thermal runaway, and the ability to withstand
severely mismatched loads without suffering damage.

manual gain control, AGC ALC and modulation systems.

(See Figure 8.)

Power output can be varied over a wide range with a low

power dc control signal, thus facilitating manual gain

AMPLIFIER DESIGN

control, ALC and modulation.

Impedance matching networks similar to those used

with bipolar UHF transistors are suitable for the MRF174.

DC BIAS

See Motorola Application Note AN-721, Impedance

The MRF174 is an enhancement mode FET and, there

Matching Networks Applied to RF Power Transistors. The

higher input impedance of RF MOS FET's helps ease the

fore, does not conduct when drain voltage is applied.

Drain current flows when a positive voltage is applied to
the gate. See Figure 9 for a typical plot of drain current

task of broadband network design. Both small signal scat

tering parameters and large signal impedances are pro
vided. While the s-parameters will not produce an exact
design solution for high power operation, they do yield

versus gate voltage. RF power FETs require forward bias

for optimum performance. The value of quiescent drain

current (Iqq) is not critical for many applications. The

a good first approximation. This is an additional advan

tage of RF MOS power FETs.

MRF174 was characterized at Idq = 100 mA, which is

MOTOROLA RF DEVICE DATA

2-458

MRF174

FIGURE19 - SERIES EQUIVALENTINPUTAND OUTPUTIMPEDANCE, Zin, Zql*

MOTOROLA RF DEVICE DATA

2-459

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF175GV
MRF175GU

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode
... designed for broadbandcommercialand military applications using push pullcircuits
at frequencies to 500 MHz. The high power, high gain and broadband performance of
these devices makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.

N-CHANNEL MOS
BROADBAND

RF POWER FETs
200/150 WATTS
28 VOLTS
500 MHz

Guaranteed Performance

MRF175GV (S 28 V, 225 MHz ("V" Suffix)

Output Power 200 Watts
Power Gain 14 dB Typ
Efficiency 65% Typ
MRF175GU @ 28 V, 400 MHz ("U" Suffix)
Output Power 150 Watts

fr3

Power Gain 12 dB Typ

Efficiency 55% Typ
100% Ruggedness Tested At Rated Output Power

30I?""*

IFIangel

Low Thermal Resistance

Low Crss 20 pFTyp (a Vqs = 28 V

MAXIMUM RATINGS

Rating

Symbol

Value

Drain-Source Voltage

VQSS

Vdc

Drain-Gate Voltage

vdgr

Vdc

IRGS = 1 Mfl)
Gate-Source Voltage

Unit

vqs

Vdc

Drain Current Continuous

Adc

Total Device Dissipation @ Tc = 25C

400

Watts

2.27

WVC

Derate above 25C

Storage Temperature Range

Operating Junction Temperature

Tstg

-65 to +150

200

Symbol

Max

Unit

Rwc

0.44

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case

Handling and Packaging MOSdevices are susceptibleto damage from electrostatic charge. Reasonable precautionsin handlingand packaging MOS
devices should be observed.

MOTOROLA RF DEVICE DATA

2-460

MRF175GV, MRF175GU

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted)

Symbol

Min

Drain-Source Breakdown Voltage <Vqs = 0, Iq = 50 mA)

V(BR)DSS

Zero Gate Voltage Drain Current (Vqs = 28 V,Vqs = )

'OSS

Gate-Source Leakage Current [Vqs - 20 V, Vqs = 0)

gss

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS (Note 1)

Vdc

2.6

mAdc

uAdc

Vdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage (Vqs = 10 V, Iq = 100 mA)

VGS(th)

Drain-Source On-Voltage (Vqs = 10 V, Iq = 5 A)

VDS(on)

Forward Transconductance {Vqs - 10 V, Irj = 2.5 A)

9fs

Vdc

1.5

mhos

DYNAMIC CHARACTERISTICS (Note 1)

Input Capacitance (Vqs - 28 V, Vqs = 0, f = 1 MHz)

Ciss

' Output Capacitance (Vqs - 28 V, Vqs = 0.f = 1 MHz)

Coss

Reverse Transfer Capacitance (Vrjs = 28 V, Vqs = 0, f = 1 MHz)

crss

180

200

pF
pF
pF

FUNCTIONAL CHARACTERISTICS MRF175GV (Figure 1) (Note 2)

Common Source Power Gain

GpS

(VDD o 28 Vdc, Pout = 200 W, f = 225 MHz, lDQ = 2 x 100 mA)

Drain Efficiency

(Vdd = 28 Vdc, Pout = 200 W, f = 225 MHz, Iqq = 2 x 100 mA)

Electrical Ruggedness

No Degradation in Output Power

(Vqd = 28 Vdc, Pout = 200 W, f = 225 MHz. IDq = 2 x 100 mA

VSWR 10:1 at all Phase Angles)
Note 1. Each side of device measured separately.
Note 2. Measured in push-putl configuration.

-A/W

BIAS0-6 V

-l

f
I
-1L i

28V

II
R2>

PftiLU
'

^iTjiY
C1
C2, C3, C7. C8
C4. C9
C5
C6
C10

Arco 404, 8-60 pF

1000 pF Chip
0.1 pF Chip
160 pF Chip
100 pF and 130 pF Chips in Parallel
0.47 pF Chip. Kemet 1215 or Equivalent

10 Turns AWG #16 Enamel Wire. Close

Wound. 1/4" I.D.
Ferrite Beads of Suitable Material for
1.5-2 pH Total Inductance

100 Ohms. 1/2 W

R2
T1

1 k Ohm. 1/2 W
4:1 Impedance Ratio RF Transformer.

Can Be MAdo of 25 Ohm Semirigid Coax,

47-52 Mils 0.0.

1:9 Impedance Ratio RF Transformer.

Can Be MAdc of 15-18 Ohms Semirigid
Coax. 62-90 Mils O.D.

Board material .062" fiberglass (G10I,

Two sided, 1 oz. copper, *r 5

NOTE: For stability, the input transformer T1 should be loaded

with ferrite toroids or beads to increase the common

mode inductance. For operation below 100 MHz. The

Unless otherwise noted, all chip capacitors

same is required for the output transformer.

are ATC Type 100 or Equivalent.

Figure 1. 225 MHz Test Circuit

MOTOROLA RF DEVICE DATA

2-461

MRF175GV, MRF175GU

ELECTRICAL CHARACTERISTICS (Tc = 25X unlessotherwise noted)

Characteristic

Symbol

Min

Typ

Gps

Max

UnH

FUNCTIONAL CHARACTERISTICS MRF175GU (Figure2) (Note 1)

Common Source Power Gain

(VDD = 28 Vdc, Pout = 150 W, f = 400 MHz, lDQ = 2 x 100 mA)

Drain Efficiency

IVdd = 28 Vdc, Pout = 150W,f = 400 MHz, lDQ = 2 x 100 mA)

Electrical Ruggedness

No Degradation in Output Power

<l>

(VDd = 28 Vdc,P0ut = 150W, f = 400 MHz, Idq = 2 x 100 mA

VSWR10:1 at all Phase Angles)
Note 1. Measured in push-pull configuration.

C14
BIAS

C12

_LR2|
-

C15

mdz S_L
I

f D.U.T. ^

L6 C18

3 -

i
n

28V

-nrufHi-Hi

I>^
n^wxi-u

TC16

81
B2

Balun 50 f) Semi Rigid Coax 0.086O.D.2Long

Balun 50 (1 Semi Rigid Coax 0.141" O.D. 2' Long

CI. C2, C8, C9

C3, C5, C7

C14. C15

270 pF ATC Chip Cap

1-20 pF Trimmer Cap
IS pF ATC Chip Cap
33 pF ATC Chip Cap
0.01 pF Ceramic Cap
1 pF 50 V Tantalum
680 pF Feedthru Cap

C18

20 pF 50 V Tantalum

C4
C6

CIO. C12. C13. C16, C17

C11

0.180--j

C17-

L_ 0.200"

LI, 12

Hairpin Inductor #18 Wire

13. L4
L5
L6
R1
R2. R3

12 Turns #18 Enameled Wire 0.340" I.D.

Ferroxcube VK200 20/4B

3 Turns #16 Enamoled Wire 0.340" I.D.

21. 22
23. 24
25, 26

Microstrip Line 0.400* x 0.250"

Microstrip Line 0.870' x 0.250*
Microstrip Line 0.500* x 0.250"

1 kit 1/4 W Resistor

10 kll 1/4 W Resistor

Board material 0.060* Teflon-fiberglass.

<r = 2.55, copper clad both sides, 2 oz. copper.

Rgure 2. 400 MHz Test Circuit

MOTOROLA RF DEVICE DATA

2-462

MRF175GV, MRF175GU

TYPICAL CHARACTERISTICS

4000

s=a

vjiS=K

l
z

3
o

10
z

5 1000

= 25C

vds. drain-source voltage ivoltsi

Ig.DRAIN CURRENT (AMPS)

Rgure 4. DC Safe Operating Area

Rgure 3. Common Source Unity Current Gain

Frequency versus Drain Current
u

vdd = 28V
_

1.1

VOS = 10

'D =

3
2A

I 2TYI CALO VICES HOWN VGSlt! | = 3

0.9

100 mA
0.8
2

100

125

Tc,CASE TEMPERATURE ("CI

Vgs. GATE-SOURCE VOLTAGE (VOLTS)

Rgure 5. Drain Current versus Gate Voltage

Rgure 6. Gate-Source Voltage versus

(Transfer Characteristics)

Case Temperature

uuu

=HI

... -

f -

500

1 Ml '

Coss
200

Cj ;s
100

Crss
20

10
0

Vqs. DRAIN-SOURCE VOLTAGE IVOLTSI

Figure 7. Capacitance versus Drain-Source Voltage*

'Data shown applies to each half of MRF175GV/GU.

MOTOROLA RF DEVICE DATA

2-463

150

175

MRF175GV, MRF175GU

TYPICAL CHARACTERISTICS
MRF175GV
300

320

1200

240

280

idq

= 2 x 100 mA

**""8W

2 160

120

**"4W

J 80

Vnn = 7RV

DQ = 2x100 mA

1 = 225 MHz

:^-

1 1 1

Pin, POWER INPUT (WATTS)

18
20
22
24
V0d. SUPPLY VOLTAGE (VOLTS)

Rgure 9. Output Power versus Supply Voltage

Rgure 8. Power Input versus Power Output

f = 225 MHz

MRF175GU

200
180

Pjn = 14W

j 160

f = 4C )MHz

500 mm-

I 140
g 120

100

10W

I 120

100
I 80

i 80
= 6W

I 60

j? 40

0
12

vds = Z8v

Vdd. SUPPLY VOLTAGE (VOLTSI

P|N, INPUT POWER (WATTS)

Rgure 10. Output Power versus Supply Voltage

Rgure 11. Output Power versus Input Power

f = 400 MHz

MRF175GV
30

P DUt = !00W
20

VDS
<DQ

= 28V
= 2x100 mA

P(,ut

= iso w-

| 1

100

200

f, FREQUENCY (MHz)

Rgure 12. Power Gain versus Frequency

MOTOROLA RF DEVICE DATA

2-464

MRF175GV, MRF175GU

INPUT AND OUTPUT IMPEDANCE

vdd - 28V Idq =

ZlN

i
MHt

2 x 100 mA

ZOL*
OHMS

OHMS

(Pout = 1 W)
500
400
300
225

1.35 +
1.60 +
1.75 1.95 -

J4.00
J2.20
jO.20
J2.30

1.70 +
2.00 +
2.60 +
3.10 -

J2.70
jl.20
jO.20
J0.25

NOTE: Input and output impedance values given are measured from gate to gate and drain to drain respectively.

Rgure 13. Series Equivalent Input/Output Impedance

RF POWER MOSFET CONSIDERATIONS

TheCjssgiven inthe electricalcharacteristics table was

MOSFET CAPACITANCES

The physical structure of a MOSFET results in capaci

tors between the terminals. The metal oxide gate struc

ture determines thecapacitors from gate-to-drain (Cgd),

andgate-to-source ICgs). The PN junction formed during
the fabrication of the MOSFET results in a junction capac

itance from drain-to-source (C(js).

These capacitances are characterized as input (Cjss),
output (Coss)and reverse transfer (Crss)capacitances on
data sheets. The relationships between the interterminal
capacitances and those given on data sheets are shown
below. The Cjss can be specified in two ways:
1. Drain shorted to source and positive voltage at the
gate.

2. Positive voltage of the drain in respect to source and

zero volts at the gate. In the latter case the numbers

measured using method 2 above. It should be noted that

Cjss, Coss, and Crss are measured at zero drain current

and are provided for general information about the
device. They are not RF design parameters and no
attempt should be made to use them as such.
LINEARITY AND GAIN CHARACTERISTICS

In addition to the typical IMD and power gain, data

presented in Figure 3 may give the designer additional

information on the capabilities of this device. The graph
represents the small signal unity current gain frequency
at a given drain current level. This is equivalent to f-rfor
bipolar transistors. Since this test is performed at a fast
sweep speed, heating of the device does not occur. Thus,
in normal use, the higher temperatures may degrade
these characteristics to some extent.

are lower. However, neither method represents the

actual operating conditions in RF applications.

One figure of merit for a FETis its static resistance in

the full-on condition. This on-resistance, Vos(on) occurs
in the linear region of the output characteristic and is
specified under specific test conditions for gate-source
voltage and drain current. For MOSFETs,VQS(on) has a
positive temperature coefficient and constitutes an
important design consideration at high temperatures,

DRAIN

GATE

DRAIN CHARACTERISTICS

=t= Cds

Ciss - CgrJ + (
Coss = Cgd +
Crss = Cgd

because it contributes to the power dissipation within the

device.

GATE CHARACTERISTICS

O SOURCE

The gate of the MOSFET is a polysilicon material, and

is electrically isolated from the source by a layer of oxide.

MOTOROLA RF DEVICE DATA

2-465

MRF175GV, MRF175GU

The input resistance is very high on the order of 10^

ohms resulting in a leakage current of a few

placing the FET into the system it is designed for, sol

dering should be done with grounded equipment.

nanoamperes.

Gate control is achieved by applying a positive voltage

slightly in excess of the gate-to-source threshold voltage,
VGS(th)Gate Voltage Rating Neverexceed the gate voltage
rating (or any of the maximum ratings on the front page).
Exceeding the rated Vqs can result in permanent damage
to the oxide layer in the gate region.
Gate TerminationThe gates of this device are essen

tially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions

can result in turn-on of the devices due to voltage build

up on the input capacitor due to leakage currents or
pickup.

Gate Protection These devices do not have an inter

nal monolithic zener diode from gate-to-source. If gate

protection is required, an external zener diode is
recommended.

Using a resistor to keep the gate-to-source impedance

low also helps damp transients and serves another
important function. Voltage transients on the drain can

be coupled to the gate through the parasitic gate-drain

capacitance. Ifthe gate-to-source impedance and the rate
of voltage change on the drain are both high, then the

signal coupled to the gate may be large enough to exceed

the gate-threshold voltage and turn the device on.
HANDLING CONSIDERATIONS

Whenshipping,the devices should be transported only

be handled by the case and not by the leads, and when

testing the device, all leads should make good electrical
contact before voltage is applied. As a final note, when

DESIGN CONSIDERATIONS

The MRF175G is a RF power N-channel enhancement

mode field-effect transistor (FETs) designed for HF, VHF

and UHF power amplifier applications. Motorola RF MOS

FETsfeature a vertical structure with a planar design.

Motorola Application Note AN-211A, FETs in Theory
and Practice, is suggested reading for those not familiar
with the construction and characteristics of FETs.

The major advantages of RF power FETs include high

The MRF175G is an enhancement mode FETand, there

fore, does not conduct when drain voltage is applied.

Drain current flows when a positive voltage is applied to
the gate. RF power FETs require forward bias for opti
mum performance. The value of quiescent drain current
dDQ) is not critical for many applications. The MRF175G
was characterized at Iqq = 100 mA, per side, which is
the suggested minimum value of Idq. For special appli
cations such as linear amplification, Iqq may have to be
selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current.

Therefore, the gate bias circuit may be just a simple resis

tive divider network. Some applications may require a
more elaborate bias system.
GAIN CONTROL

Power output of the MRF176 may be controlled from

its rated value down to zero (negative gain) by varying

the dc gate voltage. This feature facilitates the design of
manual gain control, AGC/ALC and modulation systems.

MOTOROLA RF DEVICE DATA

2-466

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF175LV
MRF175LU

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode
... designed for broadband commercial and militaryapplications using single ended cir
cuits at frequencies to 400 MHz. The high power, high gain and broadband performance
of e8ch device makes possible solid state transmitters for FM broadcast or TVchannel
frequency bands.
Guaranteed Performance

N-CHANNEL
BROADBAND
RF POWER FETs
100 WATTS
28 VOLTS
400 MHz

MRF175LV <S> 28 V, 225 MHz ("V" Suffix)

Output Power 100 Watts
Power Gain 14 dB Typ
Efficiency 65% Typ
MRF175LU <S 28 V, 400 MHz ("U" Suffix)
Output Power 100 Watts
Power Gain 10 dB Typ
Efficiency 55% Typ

100% Ruggedness Tested At Rated Output Power

Low Thermal Resistance

All Gold Metal System For Ultra Reliability

Low Crss 20 PF TYP @ VDS = 28 V

CASE 333-03

MAXIMUM RATINGS

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Vdc

Gate-Source Voltage

VGS

Vdc

Adc

270

Watts

1.54

W/C

Rating

Drain Current Continuous

Total Device Dissipation @ Tc = 25C

Derate above 25C

-65 to +150

Storage Temperature Range

'stg

Operating Junction Temperature

200

Symbol

Max

THERMAL CHARACTERISTICS
Characteristic

Rwc

Thermal Resistance, Junction to Case

UnH
"C/W

Handling andPackaging MOS devices aresusceptible to damage from electrostatic charge. Reasonable precautions in handling andpackaging MOS
devices should be observed.

MOTOROLA RF DEVICE DATA

2-467

MRF175LV, MRF175LU

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage (Vqs = 0, Id = 50 mA)

V(BR|DSS

Zero Gate Voltage Drain Current (Vds = 28 V, Vqs - 0)

loss

Gate-Source Leakage Current (Vqs = 20 V. Vds = )

IGSS

Vdc

2.5

mAdc

pAdc

Vdc

ON CHARACTERISTICS

Gate Threshold Voltage (Vds = 10 V, Id = 100 mA)

VGS(th)

Drain-Source On-Voltage (Vqs = 10 V, Id = 5 A)

vDS(on)

Forward Transconductance (Vds ~ 1 v> 'D = 2.5 A)

flfs

1.5

Vdc
mhos

DYNAMIC CHARACTERISTICS

Input Capacitance (Vds = 28 V,Vqs = 0, f = 1 MHz)

ciss

Output Capacitance (Vds = 28 V,Vqs = 0, f = 1 MHz)

Coss

Reverse Transfer Capacitance (Vds = 28 V,Vqs = 0, f = 1 MHz)

Crss

180
200
20

FUNCTIONALCHARACTERISTICS MRF17SLV(Figure 1)
Common Source Power Gain

Gps

(Vdd = 28 Vdc, Pout = 100 W, f = 225 MHz, Idq = 100 mA)

Drain Efficiency

(VDD = 28 Vdc, Pout = 100 W, f = 225 MHz, lDQ = 100 mA)

Electrical Ruggedness

No Degradation in Output Power

(Vdd = 28 Vdc, Pout = 100 W, f = 225 MHz, Idq = 100 mA

VSWR 30:1 at all Phase Angles)

FUNCTIONALCHARACTERISTICS MRF17SLU (Figure 2)

Common Source Power Gain

Gps

(Vdd = 28 Vdc, Pout = 100 W, f = 400 MHz, Idq = 100 mA)

Drain Efficiency

(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, lDQ = 100 mA)

Electrical Ruggedness

No Degradation in Output Power

(Vdd = 28 Vdc, Pout = 100 W, f = 400 MHz, Idq = 100 mA

VSWR 30:1 at all Phase Angles)

RFC1

< +28Vdc

CI. C2. CS
C3. C7
C4
CS
C6
C9

C10
C11

Arco 483 or Equivalent

25 pF Unelco Cap
1000 pF Chip Cap
0.01 pF Chip Cap
250 pF Unelco Cap
Arco 462 or Equivalent
1000 pF ATC Chip Cap
10 pF 100 V Electrolytic

Hairpin Inductor #18 Wire

J] 0.45'

_TL 032'

0.15"| |*~f

Stripline Inductor 0.200* x 0.500*

Hgure 1. 225 MHz Test Circuit

MOTOROLA RF DEVICE DATA

2-468

Hairpin Inductor #16 Wire

0.2--H k
L4
RFC1
R1
R2

2 Turns #16 Wire 5/16" ID

VK200-4B
1 k 1/4 W Resistor
100 (1 Resistor

MRF175LV, MRF175LU

C11 CI2

C13 C14

ywv>
tee
* * try^nr^t

Tal-T-rolHI

-<GND

<"T

IN>

C1.C8
C2. C4. C6, C7
C3
C5

270 pF ATC Chip Cap

1-20 pF Trimmer Cap
15 pF Mini Unelco Cap
33 pF Mini Unelco Cap
0.1 pF Ceramic Cap

C9, CIO. C12

C11.C14

680 pF Feed Thru Cap

C13

50 pF Tantalum Cap

1N5352 Zener Diode

Hairpin Inductor #18 Wire

0.25--H \~-~~f

R1
R2
R3

10 k 1/4 W Resistor
10 k Variable Resistor
1.5 k 1/4 W Resistor

Z1
Z2
Z3

Microstrip Line 0.950" x 0.250"

Microstrip Line 1" x 0.250"
Microstrip Line 0.550" x 0.250"

0.4"
12
L3

12 Turns #18 Wire 0.450" ID

Ferroxcube VK200 20/4B

Board Material 0.062" Teflon

fiberglass, t, = 2.56. 1 oz. copper

clad both sides

Hgure 2. 400 MHz Test Circuit

TYPICAL CHARACTERISTICS
4000

- -

^ 3000

V( s-

V
_ .

2000
x

vn S=1

- -

-Tr = 25 X

1000

Vqs. DRAIN-SOURCE VOLTAGE (VOLTS)

In, DRAIN CURRENT (AMPS)

Hgure 3. Common Source Unity Current Gain

Frequency versus Drain Current

Figure 4. DC Safe Operating Area

vos = 10
3

TYI ICALD MCES rIOWN

vGS(th) - >

-25

Tc.CASE TEMPERATURE TO

Vgs.GATE-SOURCE VOLTAGE IVOLTSI

Hgure 5. Drain Current versus Gate Voltage

Hgure 6. Gate-Source Voltage versus

(Transfer Characteristics)

Case Temperature

MOTOROLA RF DEVICE DATA

2-469

100

MRF175LV, MRF175LU

TYPICAL CHARACTERISTICS
1000

11 1
v

ss = ov

f -

500

1 Ml '

Coss
~ 200

MSS

n 100

tfSS

Vos,DRAIN-SOURCE VOLTAGE (VOLTS)

Hgure 7. Capacitance versus Drain-Source Voltage

MRF175LV

MRF175LU

Pin - ""

^in = 14^

= 10Wg""

=2W

60
73 w

= 6W

I <0

a?
f = 225M Hz

>cIQ = 100 mA
2

-idq

= 100 mA

Vdd,supply voltage ivoltsi

SUPPLY VOLTAGE (VOLTSI

Hgure 9. Output Power versus Supply Voltage

Hgure 8. Output Power versus Supply Voltage

f = 400 MHz

160
140

1120

2 20

100

Vrv

M J

'DO =
l*Ot I =

100m/I

1 = 225 MH

00 MH

I 6

| 40

vdd = 28V
DQ = 100mA

1UU w

20
0

100

200

Pin. INPUT POWER (WATTS)

(.FREQUENCY (MHz)

Hgure 10. Power Gain versus Frequency

Figure 11. Output Power versus Input Power

MOTOROLA RF DEVICE DATA

2-470

MRF175LV, MRF175LU

INPUT AND OUTPUT IMPEDANCE

Vdd = av 'DO = 100 mA

(Pout = 100W)
f
MHz

30
100
150
175

225
300
400

Z|N

zol'

Ohms

2.80 - J4.00
1.40 - J2.80
1.10 - jl.90

1.00 0.95 0.95 +

1.05+

jl.25
jO.65
jO.20

jl.15

3.65 2.60 2.10 1.80 1.50 1.35 1.45 +

jl.30
jl.50
jl.40
jl.20

jO.80
jO.30
jO.55

ZqL' = CONJUGATE OF THE OPTIMUM

LOADIMPEDANCE INTOWHICH THE
DEVICE OPERATES AT A GIVENOUTPUT

POWER, VOLTAGE, ANDFREQUENCY.

RF POWER MOSFET CONSIDERATIONS

MOSFET CAPACITANCES

zero volts at the gate. In the latter case the numbers

The physical structure of a MOSFET results in capaci

tors between the terminals. The metal oxide gate struc

are lower. However, neither method represents the

ture determines thecapacitors from gate-to-drain (Cqrj),

actual operating conditions in RF applications.

and gate-to-source (CgS). ThePN junction formed during

the fabrication of the FETresults in a junction capacitance
from drain-to-source (Cfjs).

O DRAIN

These capacitances are characterized as input (Cjss),

output (Coss)and reverse transfer (Crss)capacitances on

c9d S
GATE

data sheets. The relationships between the interterminal

capacitances and those given on data sheets are shown

below. The C;ss can be specified in two ways:

iCds

cgs ^

1. Drain shorted to source and positive voltage at the

gate.

OSOURCE

2. Positive voltage of the drain in respect to source and

MOTOROLA RF DEVICE DATA

2-471

Cjss = Cgd + CgS

Coss = Cgd + l-ds
Crss = Cgd

MRF175LV, MRF175LU

UNEARITY AND GAIN CHARACTERISTICS

signal coupled to the gate may be large enough to exceed

In addition to the typical IMD and power gain data

presented, Figure 3 may give the designer additional
information on the capabilities of this device. The graph
represents the small signal unity current gain frequency
at a given drain current level. This is equivalent to fr for
bipolar transistors. Since this test is performed at a fast

the gate-threshold voltage and turn the device on.

sweep speed, heating of the device does not occur. Thus,

in normal use, the higher temperatures may degrade

HANDLING CONSIDERATIONS

Whenshipping,the devices should be transported only

these characteristics to some extent.

DRAIN CHARACTERISTICS

One figure of merit for a FET is its static resistance in

the full-on condition. Thison-resistance, Vos(on)< occurs

in the linear region of the output characteristic and is
specified under specific test conditions for gate-source

voltageand draincurrent. ForMOSFETs, Vos(on) "as a

positive temperature coefficient and constitutes an

important design consideration at high temperatures,

because it contributes to the power dissipation within the
device.

be handled by the case and not by the leads, and when

testing the device, all leads should make good electrical
contact before voltage is applied. As a final note, when
placing the FET into the system it is designed for, sol
dering should be done, with a grounded iron.
DESIGN CONSIDERATIONS

The MRF175L is a RF power N-channel enhancement

mode field-effect transistors (FET)designed for HF,VHF
and UHF power amplifier applications. Motorola FETs
feature a vertical structure with a planar design.
Motorola Application Note AN-211A, FETs in Theory
and Practice, is suggested reading for those not familiar

GATE CHARACTERISTICS

with the construction and characteristics of FETs.

The gate of the FET is a polysilicon material, and is

electrically isolated from the source by a layer of oxide.
The input resistance is very high on the order of 109
ohms resulting in a leakage current of a few

The major advantages of RF power FETs include high

nanoamperes.

power dc control signal.

Gate control is achieved by applying a positivevoltage

slightlyin excess of the gate-to-sourcethreshold voltage,
vGS(th)Gate Voltage Rating Never exceed the gate voltage
rating. Exceeding the rated Vqs can result in permanent

DC BIAS

The MRF175L is an enhancement mode FET and, there

fore, does not conduct when drain voltage is applied.

Drain current flows when a positive voltage is applied to
the gate. RF power FETs require forward bias for opti

damage to the oxide layer in the gate region.

Gate Termination The gates of these devices are
essentially capacitors. Circuits that leave the gate open-

mum performance. The value of quiescent drain current

(lDQ) is not critical for many applications. The MRF175L
was characterized at Iqq = 100 mA, which is the sug
gested minimum value of Iqq. For special applications
such as linear amplification, Iqq may have to be selected

circuited or floating should be avoided. These conditions

can result in turn-on of the devices due to voltage build

up on the input capacitor due to leakage currents or
pickup.

to optimize the critical parameters.

The gate is a dc open circuit and draws no current.

Gate Protection These devices do not have an inter

nal monolithic zener diode from gate-to-source. If gate

Therefore, the gate bias circuit may be just a simple resis

tive divider network. Some applications may require a

protection is required, an external zener diode is

recommended.

more elaborate bias system.

Using a resistor to keep the gate-to-source impedance

low also helps damp transients and serves another
important function. Voltage transients on the drain can

GAIN CONTROL

be coupled to the gate through the parasitic gate-drain

its rated value down to zero (negative gain) by varying

the dc gate voltage. This feature facilitates the design of

Power output of the MRF175L may be controlled from

capacitance. Ifthe gate-to-source impedance and the rate

of voltage change on the drain are both high, then the

manual gain control. AGC/ALC, and modulation systems.

MOTOROLA RF DEVICE DATA

2-472

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF176GV
MRF176GU

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode
... designed for broadband commercial and military applications using push pull circuits
at frequencies to 500 MHz.The high power, high gain and broadband performance of
these devices makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.

Electrical Performance

N-CHANNEL MOS
BROADBAND

RF POWER FETs
200/150 WATTS
50 VOLTS
500 MHz

MRF176GV <5 50 V, 225 MHz ("V" Suffix)

Output Power 200 Watts

Power Gain 17 dB Typ

Efficiency 55% Typ

MRF176GU <a 50 V, 400 MHz ("U" Suffix)

Output Power 150 Watts

Power Gain 14 dB Typ
Efficiency 50% Typ
100% Ruggedness Tested At Rated Output Power

(Flange)

Low Thermal Resistance

Low Crss 7 pF Typ (a Vqs = 50 V

CASE 37501, STYLE 2

MAXIMUM RATINGS

Symbol

Value

Drain-Source Voltage

VDSS

125

Vdc

Gate-Source Voltage

vgs

Vdc

Rating

Unit

Drain Current Continuous

Adc

Total Device Dissipation Cr Tc = 25C

400

Watts

2.27

W/X

Tstg

-65 to +150

200

Symbol

Max

Unit

Rjc

0.44

C/W

Derate above 25C

Storage Temperature Range

Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Handling and Packaging MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS
devices should be observed.

MOTOROLA RF DEVICE DATA

2-473

MRF176GV, MRF176GU

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted)

Characteristic

Symbol

Min

V(BR)DSS

125

Typ

Max

Unit

OFF CHARACTERISTICS (Note 1)

Drain-Source Breakdown Voltage {Vqs = 0, Irj = 100 mA)

Zero Gate Voltage Drain Current (Vos = 50 V,Vqs = 0)

loss

Gate-Source Leakage Current {Vqs = 20 V,Vqs - 0)

>GSS

Vdc

2.5

mAdc

/iAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage (Vqs = 10 V, Iq = 100 mA)

VGS(th)

Drain-Source On-Voltage (Vqs = 10 V, Iq = 5 A)

VDS(on)

Forward Transconductance (Vqs = 10 V, Iq = 2.5 A)

Ofs

Vdc

mhos

DYNAMIC CHARACTERISTICS (Note 1)

Input Capacitance (Vos = 50 V,Vqs = 0, f = 1 MHz)

Cjss

Output Capacitance (Vqs = 50 V,Vqs = 0, f = 1 MHz)

C0ss

Reverse Transfer Capacitance (Vqs = 50 V,Vqs = 0, f = 1 MHz)

Crss

180

110
7

FUNCTIONAL CHARACTERISTICS MRF176GV(Figure 1) (Note 2)

Common Source Power Gain

Gps

(Vdd = 50 Vdc, Pout = 200 W, f = 225 MHz, Iqq = 2 x 100 mA)

Drain Efficiency

(Vqd = 50 Vdc, Pout = 200 W, f = 225 MHz, Idq = 2 x 100 mA)

Electrical Ruggedness

No Degradation in Output Power

(Vdd = 50 Vdc, Pout = 200 W, f = 225 MHz, lDQ = 2 x 100 mA

VSWR 10:1 at all Phase Angles)
Notes:

1. Each side of device measured separately.

2. Measured in push-pull configuration.

50V

R1 100 Ohms. Vi W
R2IK Ohms, WW

LI 10 Turns AWG #16 Enameled Wire.

Close Wound. V- I.D.
L2 Ferrite Beads of Suitable Material

CI Arco 404. 8-60 pF

C2. C3, C6. C8 1000 pF Chip

C4. C9 0.1 pF Chip
C5180 pF Chip
C7 Arco 403. 3-35 pF
C10 0.47 /iF Chip. Kernel 1215 or Equivalent

for 1.5-2 pH. Total Inductance

T1 4:1 Impedance Ratio RF Transformer.

Can Be Made of 25 Ohm Semirigid

Co-Ax, 47-62 Mils O.D.

T2 1:4 Impedance Ratio RF Transformer.

Can Be Made of 25 Ohm Semirigid

Board material .062" fiberglass IG10).

Two sided, 1 oz. copper. <r 3 5

Co-Ax. 62-90 Mils O.D.

Unless otherwise noted, all chip capacitors

are ATC Type 100 or Equivalent

NOTE: For stability, the input transformer T1 should be loaded

with ferrite toroids or beads to increase the common

mode inductance. For operation below 100 MHz. The

same is required for the output transformer.

Figure 1. 225 MHz Test Circuit

MOTOROLA RF DEVICE DATA

2-474

MRF176GV, MRF176GU

ELECTRICAL CHARACTERISTICS (Tc = 25Cunless otherwise noted)

Characteristic

Symbol

Min

Typ

Gps

Max

Unit

FUNCTIONAL CHARACTERISTICS MRF176GU (Figure 2) (Note 1)

Common Source Power Gain

(Vdd = 50 Vdc, P0ut = 150 W, f = 400 MHz, Idq = 2 x 100 mA)

Drain Efficiency

(Vdd = 50 Vdc, Pout = 150 W, f = 400 MHz, Idq = 2 x 100 mA)

Electrical Ruggedness

No Degradation in Output Power

(VDD = 50 Vdc, Pout = 150 W, f = 400 MHz, lDQ = 2 x 100 mA

VSWR 10:1 at all Phase Angles)
Note 1. Measured in push-pull configuration.

C11

C12

BIAS'

>/j\

C13=i=

1 T I

sgv

hinrvYVTir

I 1

H-^H^H

R1 1 M! Vt W Resistor

AC14="=

R2. R3 10 till V*W Resistor

CI, C2, C9, C10 270 pF ATC Chip Capacitor

C3 15 pF ATC Chip Cap

C4, C8 1-20 pF Piston Trimmer Cap
C5 27 pF ATC Chip Cap
C6. C7 22 pF Mini Unelco Capacitor

L5,16 13T #18 W.250ID

.200

C11, C13. C14, C15, C16 0.01 pF Ceramic Capacitor H

C12 1 pF 50 V Tantalum Cap
C17. C18 680 pF Feedthru Capacitor

C19 10 pF 100V Tantalum Cap

,400*

^^^^

LI, 12 Hairpin Inductor #18 W-'

L3, L4 Hairpin Inductor #18W

L7 Ferroxcube VK-200 20/4B

L8 3T#18W.340ID

.200" H H

*^A_

Z1. Z2 Microstrip Line .400L x .250W

Z3. Z4 Microstrip Line 450L x .250W

B1 Balun, 50 II Semirigid Coax .086 OD 2" Long

B2 Balun. 50 II Semirigid Coax .141 OD 2" Long

-200"

Ckt Board Material .060" teflon-fiberglass, copper clad both sides. 2 oz. copper,

<r =255

Figure 2. 400 MHz Test Circuit

TYPICAL CHARACTERISTICS

Vr>r - inv._
3000

s
vds

= 15 v \

-J-|

3
o

tooo

0123456789

Vqs.drain-source voltage ivoltsi

id, drain current iampsi

Rgure 3. Common Source Unity Current*

Gain-Frequency versus Drain Current

Figure 4. DC Safe Operating Area

Data shown applies to each half of MRF176GV/GU

MOTOROLA RF DEVICE DATA

2-475

MRF176GV, MRF176GU

TYPICAL CHARACTERISTICS

INPUTAND OUTPUT IMPEDANCE

MRF176GU/GV

Vdd = 50V lDQ = Zx1M"nA

f
MHi

ZlN

ZOL*

OHMS

(Pout = 150Wl
500
400
300
225

1.60 +
1.85 +
2.00 2.05 -

225
150

2.05 2.50 3.20 5.50 7.50 -

J2.70
(075
jl.10
J2.S0

2.60 +
3.00 4.80 6.50 -

J0.10
J1.90
J3.10
J3.50

(Pou) = 200 W)

100

50
30

J2.50
J4-80
J6.00
J7.00
J6.50

5.00 8.20 11.00 14.00 17.00 -

J4.20
(5.00
J5.20
J5.00
J4.00

Zol* = CONJUGATE OF THE OPTIMUM

LOADIMPEDANCE INTOWHICHTHE
DEVICE OPERATESAT A GIVENOUTPUT

POWER, VOLTAGE, AND FREQUENCY.

NOTE: Input and output impedance values given are measured from gate to gate and drain to drain respectively.

Figure 5. Series Equivalent Input/Output Impedance

500

200

Ciss

,^ Pout = 200W
cr

5100

| 50

v \

| 15

.vGs = ov.
f = 1MHz

Pout = 1S0"WN \

vds = 50V
idq = 2 x 100 mA

c, SS

5
10

Vds.DRAIN-SOURCE VOLTAGE IVOLTSI

100

200

f. FREQUENCY (MHz)

Figure 6. Capacitance versus Drain-Source Voltage"

Figure 7. Power Gain versus Frequency

'Data shown applies to each half of

MRF176GV/GU

MRF176GV
300

320

1 1
Vrjo = 50V

280

240

"DO ==

Pin =

2x11 OmA

200

vdd = 40V

| 160

100

kn.
7"*MVI>

1 1 1
032343S3840

Pin.POWER INPUT (WATTSI

44464850

Vos.SUPPLY VOLTAGE IVOLTS)

Figure 9. Output Power versus Supply Voltage

Figure 8. Power Input versus Power Output

f = 225 MHz

MOTOROLA RF DEVICE DATA

2-476

MRF176GV, MRF176GU

TYPICAL CHARACTERISTICS
MRF176GU
200

1 = 400 MHz

160

500 MHz

j 160

1 - 400 MHz

I 140
g 120

| 100

/
/

1"
o? 40

vdd = 40V
idq = 2 x 100 mA

vnn = 50V
'DO = 2 x 100 mA

P|N, INPUT POWER (WATTS)

P|N.INPUT POWER (WATTS)

Figure 10. Output Power versus Input Power

VDD = 40 V

Hgure 11. Output Power versus Input Power

VDD = 50 V

P|N = 12w
= 8W

= 4W

if 40

idq
20

= 2x10C mA

Vdd. >UpPLY VOLTAGE (VOLTS)

Hgure 12. Output Power versus Supply Voltage

f = 400 MHz

MOTOROLA RF DEVICE DATA

2-477

MRF176GV, MRF176GU

RF POWER MOSFET CONSIDERATIONS

MOSFET Capacitances

specified under specific test conditions for gate-source

The physical structure of a MOSFET results in capaci

tors between the terminals. The metal oxide gate struc

voltage and drain current. For MOSFETs, Vps(on) has a

ture determines the capacitors from gate-to-drain (Cgd),

and gate-to-source (Cgs). The PN junction formed during

positive temperature coefficient and constitutes an

important design consideration at high temperatures,
because it contributes to the power dissipation within the

the fabrication of the MOSFET results in a junction capac

device.

itance from drain-to-source (C,js).

These capacitances are characterized as input (Cjss),
output (Coss) and reverse transfer {Crss) capacitances on
data sheets. The relationships between the interterminal
capacitances and those given on data sheets are shown
below. The Cjss can be specified in two ways:
1. Drain shorted to source and positive voltage at the
gate.

Gate Characteristics

The gate of the MOSFET is a polysilicon material, and is

electrically isolated from the source by a layer of oxide. The

input resistance is veryhigh on the orderof 109ohms

resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage
slightly in excess of the gate-to-source threshold voltage,

VGS(th)-

2. Positive voltage of the drain in respect to source and

zero volts at the gate. In the latter case the numbers
are lower. However, neither method represents the
actual operating conditions in RF applications.

Gate Voltage Rating Never exceed the gate voltage

rating (or any of the maximum ratings on the front page).

Exceeding the rated Vqs can result in permanent damage

to the oxide layer in the gate region.
Gate Termination The gates of this device are essen
tially capacitors. Circuits that leave the gate open-circuited
or floating should be avoided. These conditions can result in
turn-on of the devices due to voltage build-up on the input
capacitor due to leakage currents or pickup.

The Cjss given in the electrical characteristics table was

measured using method 2 above. It should be noted that

Cjss, Coss, and Crss are measured at zero drain current

and are provided for general information about the
device. They are not RF design parameters and no
attempt should be made to use them as such.

Gate Protection This device does not have an internal

monolithic zener diode from gate-to-source. The addition of

an internal zener diode may result in detrimental effects on
the reliability of a power MOSFET. If gate protection is

Q DRAIN

required, an external zener diode is recommended.

GATE

-r-cds

Ciss = Cgd + Cgs

Coss = Cgd + Cds
Crss = Cgd

HANDLING CONSIDERATIONS

The gate of the MOSFET, which is electrically isolated from

the rest of the die by a very thin layer of S1O2. may be
damaged if the power MOSFET is handled or installed
improperly. Exceeding the 40 V maximum gate-to-source

Cgf^
6 SOURCE

voltage rating, Vesfmax).can rupture the gate insulation and

destroy the FET. RF Power MOSFETs are not nearly as
susceptible as CMOS devices to damage due to static dis
charge because the input capacitances of power MOSFETs
are much larger and absorb more energy befoie being
charged to the gate breakdown voltage. However, once
breakdown begins, there is enough energy stored in the gatesource capacitance to ensure the complete perforation of the
gate oxide. To avoid the possibility of device failure caused
by static discharge, precautions similar to those taken with
small-signal MOSFET and CMOS devices apply to power

Linearity and Gain Characteristics

In addition to the typical IMD and power gain, data
presented in Figure 3 may give the designer additional
information on the capabilities of this device. The graph
represents the small signal unity current gain frequency
at a given drain current level. This is equivalent to fj for
bipolar transistors. Since this test is performed at a fast
sweep speed, heating of the device does not occur. Thus,
in normal use, the higher temperatures may degrade

MOSFETs.

these characteristics to some extent.

When shipping, the devices should be transported only in

antistatic bags or conductive foam. Upon removal from the
packaging, careful handling procedures should be adhered
to. Those handling the devices should wear grounding straps
and devices not in the antistatic packaging should be kept in
metal tote bins. MOSFETs should be handled by the case

Drain Characteristics

One figure of merit for a FET is its static resistance in

the full-on condition. This on-resistance, VrjS(on)< occurs

in the linear region of the output characteristic and is

MOTOROLA RF DEVICE DATA

2-478

MRF176GV, MRF176GU

and not by the leads, and when testing the device, all leads
should make good electrical contact before voltage is applied.
As a final note, when placing the FET into the system it is
designed for, soldering should be done with grounded
equipment.
The gate of the power MOSFET could still be in danger
after the device is placed in the intended circuit. If the gate

The major advantages of RF power FETs include high gain,

low noise, simple bias systems, relative immunity from ther
mal runaway, and the ability to withstand severely mis
matched loads without suffering damage. Power output can
be varied over a wide range with a low power dc control
signal, thus facilitating manual gain control, ALC and
modulation.

may see voltage transients which exceed VQS(max)> the

circuit designer should place a 40 V zener across the gate
and source terminals to clamp any potentially destructive
spikes. Using a resistor to keep the gate-to-source imped
ance low also helps damp transients and serves another
important function. Voltage transients on the drain can be
coupled to the gate through the parasitic gate-drain capaci
tance. Ifthe gate-to-source impedance and the rate of voltage
change on the drain are both high, then the signal coupled
to the gate may be large enough to exceed the gate-threshold
voltage and turn the device on.
DESIGN CONSIDERATIONS

The MRF176G Is a RF power N-channel enhancement

mode field-effect transistor (FETs) designed for VHF and
UHF power amplifier applications. Motorola RF MOSFETs
feature a vertical structure with a planar design, thus avoiding
the processing difficulties associated with V-groove MOS
power FETs.
Motorola Application Note AN-211A, FETs in Theory and
Practice, is suggested reading for those not familiar with the
construction and characteristics of FETs.

DC BIAS

The MRF176G is an enhancement mode FET and, there

fore, does not conduct when drain voltage is applied. Drain

current flows when a positive voltage is applied to the gate.
RF power FETs require forward bias for optimum perfor
mance. The value of quiescent drain current (Idq) is not
critical for many applications. The MRF176G was character

ized at Idq = 100 mA, per side, which is the suggested

minimum value of Idq- For special applications such as linear
amplification, Idq may have to be selected to optimize the
critical parameters.
The gate is a dc open circuit and draws no current. There
fore, the gate bias circuit may generally be just a simple
resistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL

Power output of the MRF176 may be controlled from its

rated value down to zero (negative gain) by varying the dc

gate voltage. This feature facilitates the design of manual

gain control, AGC/ALC and modulation systems.

MOTOROLA RF DEVICE DATA

2-479

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF0211L

The RF Line

NPN Silicon

High-Frequency Transistor
SURFACE MOUNT
HIGH FREQUENCY

... designed primarily for use in the high-gain, low-noise small-signal amplifiers
for operation up to 3.5 GHz. Also usable in applications requiring fast switching

TRANSISTOR
NPN SILICON

times.

High Current-Gain-Bandwidth Product fj = 5.5 GHz (Typ) @ Ic = 40 mAdc

Low Noise Figure <&) f = 1 GHz NF(matched) = 1.8 dB (Typ)

High Power Gain GpB (matched) = 13 dB (Typ)

Surface Mount SOT-143 Offers Improved RF Performance

Lower Package Parasitics
Higher Gain
Tape and Reel Packaging Options
Higher Voltage Version of MRF5711
Electrically Similar to NEC NE 02133

CASE 318A-05, STYLE 1

LOW PROFILE
MRF0211L

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

Rating

VcEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

2.5

Vdc

Collector-Current Continuous

mAdc

Total Device Dissipation (a T/\ = 25C

0.58

Watts
mW/C

0.58

Watts

7.73

mW/C

Tjmax

150

Tstg

-65 to +150

Derate above 25C

4.64

Total Device Dissipation (a Tq = 75C (Note 1)

Derate above 75C

Maximum Junction Temperature

Storage Temperature Range

THERMAL CHARACTERISTICS

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RfiJA

216

C/W

Thermal Resistance, Junction to Case

RflJC

130

C/W

Characteristic

DEVICE MARKING
MRF0211 = 15

ELECTRICAL CHARACTERISTICS (Tc = 25Cunless otherwise noted.)

Symbol

Characteristic

Min

Typ

Max

UnH

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (Iq = 1 mAdc, Ir = 0)

V(BR)CEO

Collector-Base Breakdown Voltage dc - 0.1 mAdc, I-: = 0)

V{BR)CBO

Emitter-Base Breakdown Voltage (Ig = 50 jiAdc, Ic = 0)

V(BR)EBO

2.S

Collector Cutoff Current (Vcb = 15 vdc> 'E = 0)

ICBO

Mote 1. Case Temperature is measured on the collector lead where it first contacts
the printed circuit board closest to the package.

MOTOROLA RF DEVICE DATA

2-480

Vdc
Vdc

Vdc

ftAdc
(continued

MRF0211L

ELECTRICAL CHARACTERISTICS continued (Tc = 25T unless otherwise noted.)

Characteristic

Symbol

Min

hFE

Typ

Max

Unit

ON CHARACTERISTICS
DC Current Gain

(lC = 30 mAdc, Vce = 5 Vdc)

300

DYNAMIC CHARACTERISTICS

Collector-BaseCapacitance
(Vcb = 10 Vdc, 1E = 0, f = 1 MHz)

Figure 1

Ccb

Current Gain Bandwidth Product

(Vce = 10 Vdc, Ic = 40 mA, f = 1 GHz)

Figure 7

Figure 4

GNFmin

0.7

5.5

pF
GHz

FUNCTIONAL TESTS

Gain at Noise Figure (Tuned)

(Vce = 10 Vdc. Ic = 5 mAdc)

f = 0.5 GHz

f = 1 GHz

Noise Figure (Tuned)

(Vce = 10 Vdc, Ic = 5 mAdc)

Figure 4
f = 0.5 GHz

Power Gain in 50 n System

NFmin
0.9

f = 1 GHz

1.8

f = 2 GHz

Figure 2

GNF

Figure 2

9.5

2.7

(Vce = 10 Vdc, Ic = 5 mA, f = 1 GHz)

Noise Figure in 50 n System

(Vce = 1 Vdc' Ic = 5 mA, f = 1 GHz)

S212

Insertion Gain

13.5

15.5

(Vce = 10 Vdc, Ic = 25 mA, f = 1 GHz)

Maximum Unilateral Gain

GUmax

(VCe = 10 Vdc, Ic = 25 mA, f = 1 GHz)

TYPICAL CHARACTERISTICS
2

~~1

vce =6Vdc

1.8

f = 1 MHz
24

rr1.6

**-^ ICi=!MT

1 1 II1

Zo = 5on
rs = rL = o

g 1.4
z

1 18

{1.2
<->

1
o

3g0.8

_cob_

0.6

"Ccb"

12
u

0.4

0.2

0.5

Vcb. COLLECTOR-BASE VOLTAGE (VOLTS)

f. FREQUENCY (GHz)

Figure 1. Device Capacitances versus Voltage

Figure 2. Gain and Noise Figure

versus Frequency

vce =6Vdc

vbe
D.U.T.

RF INPUT >

BIAS
TEE

"SLUG TUNER

SLUG TUNER

s-e
TEE

MICR0LAB

2-481

"MICR0LAB/FXR

HW-XXN

SF -

AS APPLICABLE

SF - 31N > 1 GHz

Figure 3. Functional Circuit Schematic

MOTOROLA RF DEVICE DATA

-< RF OUTPUT

'BIAS

11N < 1 GHz

MRF0211L

GNp (a 500MHz

Gnf (& 1 GHj

5
z

10 /

y
NF( x 1bHi
L-

2 S3

NF(5>500MHz

Vce == 10V
0.5

lC- COLLECTOR CURRENT (mA)

f. FREQUENCY (GHz)

Rgure 4. Gain at Noise Rgure and Noise Rgure

Rgure 5. Gain at Noise Rgure and Noise Rgure

versus Frequency

versus Collector Current

1 II

f = 1MHz
Vce = 10 V

IS21I2

GUmax ~ 1 - ISkIZUI - IS<nl2|

fc 6

*-\
28
24

55 20

I 16

/"
\

12
Va = 10 V
'C = 25mA
02

. -IC,,|2_
1=211

0.5

I. FREQUENCY (GHz)

lC, COLLECTOR CURRENT (mAI

Rgure 7. Gain-Bandwidth Product

Rgure 6. Unilateral-Gain and Insertion Gain

versus Frequency

versus Collector Current

MOTOROLA RF DEVICE DATA

2-482

MRF0211L

COMMON EMITTER S-PARAMETERS

S21

S11

S22

S12

vce

(Volts)

(mA)

(MHz)

Pill

L4>

toil

L<t>

IS12I

IS22I

100

0.84

-50

13.2

151

0.04

0.90

-22

0.74

-35

200

0.81

-87

10.4

130

0.06

500

0.74

-139

5.6

100

0.07

0.50

-48

1000

0.68

-175

2.9

0.09

0.42

-58

1500

0.66

167

0.09

0.44

-67

2000

0.65

149

1.5

0.11

0.44

-73

100

0.76

-66

20.6

144

0.03

0.83

-32

200

0.73

-106

14.8

122

0.05

0.62

-49

-63

500

0.69

-153

7.1

0.06

0.36

1000

0.65

178

3.7

0.08

0.28

-71

1500

0.62

162

2.5

0.09

0.30

-77

2000

0.61

1.9

0.12

0.20

-78

100

0.65

-89

28.8

134

0.03

0.71

-44

200

0.67

-126

18.2

114

0.04

0.48

-64

500

0.65

-163

8.3

0.27

-80

1000

0.63

172

4.2

0.05
0.07

0.20

-90

1500

0.60

158

2.8

0.10

0.22

-92

2000

0.59

142

2.2

0.13

0.20

-90

100

0.62

-110

30.4

126

0.02

0.62

-49

200

0.66

-142

18.0

109

0.03

0.41

500

0.66

-171

7.9

0.04

0.25

-65
-79

1000

0.64

168

4.1

0.06

0.20

-91

1500

0.62

155

2.7

0.10

0.20

-93

2000

0.60

2.1

0.13

0.14

-90

100

0.86

-46

13.2

153

0.03

0.92

-18

200

0.82

-81

10.6

132

0.05

0.80

-28

500

0.72

-134

5.9

102

0.07

0.57

-38

1000

0.65

-171

3.2

0.08

0.49

-46

1500

0.63

169

2.1

0.08

0.52

-55

2000

0.61

149

1.6

0.10

0.53

-61

100

0.77

-60

20.7

145

0.03

0.85

-26

140

200

0.72

-98

15.2

124

0.04

0.66

-38

500

0.65

-147

7.5

0.44

-46

1000

0.59

-177

3.9

0.06
0.07

0.37

-51

1500

0.58

165

2.6

0.09

0.39

-59
-62

2000

0.56

0.13

0.40

100

0.67

-80

29.4

136

0.02

0.75

-35

200

0.66
0.63

-118

19.3
8.9

116

0.03

0.53

-48

500

145

-158

0.33

-55

0.61

175

4.6

0.05
0.07

1000

0.26

-60

1500

0.58

161

3.1

0.09

0.29

-65

2000

0.57

144

2.3

0.12

0.30

-65

100

0.65

-99

32.2

129

0.02

0.67

-38

200

0.65
0.64

-135

19.5

110

0.03

0.45

-48

500

-167

8.5

0.04

0.31

-51
-55

1000

0.61

170

4.2

0.06

0.26

1500

0.59

157

2.9

0.09

0.30

-61

2000

0.58

141

2.3

63
54

0.11

0.31

-63

MOTOROLA RF DEVICE DATA

2-483

MRF221 (See 2N6081)

MRF224 (See 2N6084)

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF226
The RF Line
13 W-225 MHz

RF POWER

TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON

... designed for 12.5 Volt large-signal power amplifier applica

tions in communication equipment operating at 225 MHz.

Specified 12.5 Volt, 225 MHz Characteristics

Output Power = 13 Watts
Minimum Gain = 9.0 dB

Efficiency = 50%
Characterized With Series Equivalent Large-Signal Impedance
Parameters

Designed to Withstand Load Mismatch at all Phase Angles with

20:1 VSWR

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage

Symbol

Value

Unit

VcEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

Collector Current - Continuous

2.6

Adc

Total Device Dissipation @Tc 25C*1'

Watts

257

mW/C

Derate above 25C

Storage Temperature Range

-65 to+150

Tstg

Stud Torque (2)

6.5

C
In. Lb.

STYLE 1:

2\(o

2BASE

| \

(1) This device is designed for RF operation. The total device dissipation rating applies
only when the device is operated as a Class C RF amplifier.

3 EMITTER

(2) For repeated assembly, use 5 In. Lb.

4. COLLECTOR

^
R

FIGURE 1 - 225 MHz TEST CIRCUIT SCHEMATIC

cio H==3

RFC 2
CI

v/;

C12

T c"f T< 12'5V

Cl_

EH- -0~ -{ls|-

Input 'E

C3*|= C4iRFClJ
CI,2.8.9

C6: :

C5: *

IS pF Chip Cap 50 V

-\ ( RF
2^ Output

C7:

NOTES:
1. DIMENSIONINGAND TOIERANCING PER ANSI
Y145M. 1982.
2 CONTROLLINGDIMENSION:INCH.

KM
A

B
C
D
E
J

RFC 2

0.15pH Molded Choke

15 pF UNELCO

O.IS x 3.15 inch Microstrip

C4.6

SOpF UNELCO

0.15 x 0.55 inch Mlcroitrip

0.15 x 1.4 inch Microstrip

25 pF UNELCO
7.0 pF UNELCO

0.15 x 2.35 Inch Microstrip

C10.12

680 pF Feedthru ALLEN BRAD LEY

0.15 x 0.5 Inch Microstrip

C11

I.OjiF, 35 V Tantalum

Board s O10 3 x 5 x 0.062 Inch

RFC 1.3

Ferroxcube VK200

K
L
M
P
R

S
T
U

UUiMETBtS
MIN
MAX
978
940
838
8.13
1702
2007
545

1.78
006

124$
1.40

5.97

018

0.330
0790

0.215

0235

0.070
0003

0.490

1.78

0.055

2.11
249

0385

0.320
0.670

45 NOM
1.27
7.59
780
4.01

INCHES
MAX

MIN

0J70

452
264

335

MOTOROLA RF DEVICE DATA

2-484

0070
45* NOM

0299
0.158
0.033
0.098

CASE 145A-09

ER-5

0007

0050

0.307
0178

0.100
0132

MRF226

ELECTRICAL CHARACTERISTICS (Tc- 25C unless otherwise noted.)

Characteristic

Symbol

| Min

Max

OFF CHARACTERISTICS

Collector Emitter Breakdown Voltage

V(BR)CEO

V(BR)CBO

Vdc

V(BR)EBO

4.0

Vdc

(lC-15mAdc, lB = 0)
Collector-Base Breakdown Voltage

(lC ~ 5.0 mAdc, Ie- 0)

Emitter-Base Breakdown Voltage

(l- 2.5 mAdc, lC0)

Collector Cutoff Current

CBO

0.25

mAdc

(VCb-"5 Vdc, 'E00*

ON CHARACTERISTICS
OC Current Gain

hFE

5.0

GpE

9.0

(lC - 250 mAdc, VCE - 5.0 Vdc)

FUNCTIONAL TEST (Figure II
Common-Emitter Amplifier Power Gain

IPout " 13 W, VCc " 12.5 Vdc, f - 225 MHz)

Collector Efficiency

IPout " 13 w. VCc " 12.5 Vdc, f - 225 MHz)

FIGURE 2 -

FIGURE 3 - SERIES EQUIVALENT IMPEDANCE

OUTPUT POWER versus INPUT POWER

|,s
s

13.SV,

12.5 V

SI2.S

5
& to
O

7.S

if
5.0
2.5

1.0

1.5

2.0

2.S

Zol* = Conjugate oftheoptimum loadimpedance intowhich thedevice output

3.0

operatesat a givenoutputpower, voltageand frequency.

Pin. INPUTPOWER (WATTS)

MOTOROLA RF DEVICE DATA

2-485

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF227

The RF Line

3W-225MHz

RF POWER
TRANSISTOR
NPN SILICON

NPN SILICON RF POWER TRANSISTOR

... designed for 12.5 Volt large-signal power amplifier applica

tions in communication equipment operating at 225 MHz. Ideally
suited for Class E citizens band radio.

Specified 12.5 Volt, 225 MHz Characteristics

Output Power = 3.0 Watts
Minimum Gain = 13.5 dB

Efficiency = 60%

Characterized With Series Equivalent Large-Signal Impedance

Parameters

Grounded Emitter TO-206AF (TO-39) Package for High Gain

and Excellent Heat Dissipation
Replaces Medium Power Stud Mount Devices

NOTES:
1. DIMENSIONING AND T0LERANCINGPERANSI
Y14.SM.1982.
2. CONTROLLINGDIMENSION: INCH
3. DIMENSIONJ MEASUREDFROMDIMENSIONA
MAXIMUM.
4 DIMENSION6 SHALL NOT VARY MORE THAN 025

10.010) IN ZONER. TKS ZONECONTROLLED FOR

MAXIMUM RATINGS
Symbol

Value

Collector-Emitter Voltage

Rating

VCEO

Vdc

Collector-Base Voltage

vCBO

Vdc

600

mAdc

8.0

Watts

mW/C

-65 to +200

Collector Current Continuous

TotalPower Dissipation @Tc * 25C

Derate above 25C
Storage Temperature Range

Tstg

Unit

AUTOMATICHANDLING.
5 DIMENSIONF APPLIESBETWEENDIMENSION P
AND L DIMENSION0 APPLIES BETWEEN
DIMENSIONL AND K MINIMUM.LEAD DIAMETER
IS UNCONTROLLEDIN 0MEN30N P AND
BEYOND DIMENSION K MINIMUM.

DIM
A

B
C
0
E
F

MILLIMETERS
MH
MAX
9.02
9.29
801
MO
4.20

4$7

044
053
0.44
0(8
0*1
048
5.08 BSC

072

066

074
12.70

19.05

K
L
M
P
R

6.35

1.01

45* BSC

2.54

1.27

INCHES
MAX
0.365
0.315
0.335
0.180
0.165
0.017
0.021
0.017
0035
0.016
0.019
0200 esc
0034
0.028
0.040
0.029
asco
0750
0250
45* BSC
mm
QJ5S

0.100 1 -

CASE 79-05
TO-206AF

(TO-39)

MOTOROLA RF DEVICE DATA

2-486

1 0.050

MRF227

ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted.)

Characteristic

| Symbol |

Min

V(BH)CEO

V(BR)CES

V(BR)EBO

4.0

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

(lC = 50mAdc. IB = 0>

Collector-Emitter Breakdown Voltage

He " 50 mAdc, Vpjg 0)

Emitter-Base Breakdown Voltage

(IE- 1.0mAdc, lc = 0)
Collector Cutoff Current

"CES

(VCE " 15 Vdc,VBE = 0. Tc = 55C)

Collector Cutoff Current

*CBO

IVCB" 15Vdc,lE"0)

mAdc

1.0

mAdc

ON CHARACTERISTICS
DC Current Gain

hFE

200

(lC - 100 mAdc, VCe " 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

C0b

IVCB 12.5 Vdc, l - 0. f = 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

GPE

13.5

lpout " 30 W. VCc - 12.5 Vdc. f 225 MHz)

Collector Efficiency

IPout " 3.0 W, VCc = 12.5 Vdc, f = 225 MHz)

FIGURE 1 -

225 MHz TEST CIRCUIT

C1.C2.C3.C4 ARCO 420

1000 pF. UNELCO

0.047 pF, ERIE

1.0 pF. TANTALUM

#18 AWO. 1" Wiro Length

5_[_ C6_|_ C7j_ -<*

VK200-4 Ferroxcube

1 Turn. #18 AWO, 1/4" ID x

2" Wiro Longth

0.15 MH DELE VAN Molded Choko

Board - Glass Teflon, 6n = 2.56, t 0.062'

T I T

Input/Output Connectors Typo N

MOTOROLA RF DEVICE DATA

2-487

MRF227

FIGURE 2 -

INPUT POWER veraui OUTPUT POWER -

12.5 V

5.0

*2 4J)

1-225 MHi

fc 2.0

0.1

0.2

Pj. INPUTPOWER (WATTS)

FIGURE 4 - INPUT POWER versus OUTPUT POWER - 7.5 V

FIGURE 3 - INPUT POWER versus OUTPUT POWER - 13.6 V

s.u

5.0

1
1-225MHi

r
s

.Vc i: 6Vo ti

% 3.0

g 3.0

f> 225 MHz

o
a.

. (Tunaiia-tWniill

5
5

H 2.0

1.0

0
0.1

0.1

0.2

FIGURE 5 - OUTPUT POWER verms SUPPLY VOLTAGE

5.0

0.2

Pin, INPUTPOWER (WATTS)

Pin. INPUTPOWER (WATTS)

I 225 MHz
" (lu mde JW Kit)"

3-0
o.

1 2.0
3
.3

o? 1.0
0

4.0

6.0

8.0

VCC. SUPPLY VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-488

MRF227

FIGURE 6 - SERIES EQUIVALENT IMPEDANCE

Zol* = Conjugate of theoptimum load impedance intowhich thedevice output

operatesat a givenoutputpower, voltage andfrequency.

MOTOROLA RF DEVICE DATA

2-489

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF229

The RF Line

1.5 W -90 MHz

RF POWER
TRANSISTOR
NPN SILICON

NPN SILICON RF POWER TRANSISTORS

. . . designed for 12.5 Volt, mid-band large-signal amplifier appli

cations in industrial and commercial FMequipment operating in the
40 to 100 MHz range.

Specified 12.5 Volt, 90 MHz Characteristics Output Power = 1.5 Watts

Minimum Gain = 10 dB

Efficiency = 55%

100% Tested for Load Mismatch at all Phase Angles with

30:1 VSWR

Characterized with Series Equivalent Large-Signal Impedance

Parameters

Characterized with Parallel Equivalent Large-Signal Impedance

Parameters

MRF229 - Emitter Connected to Case

STYU 5
PIN I COLLECTOR
2 BASE

3 EMITTER

Itl <036I0014I |

Hi
G

Tt
NOTES

1 DIMENSIONINGAND T0LERANONG PER ANSI

Y14 5M.1982

MAXIMUM RATINGS

? CONTROLLINGDIMENSION INCH

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

VEBO

! .0

Vdc

Collector Current -Continuous

Total Device Dissipation @Tc = 25C 11)

II ^

Adc

5.0

Watts

28.6

mW/C

TStr|

-65 to + 200

Derate above 25C

Storage Temperature Range

3 DIMENSION J MEASURED FROM DIMENSION A

4 DIMENSIONSSHALLNOTVARY MORETHAN025
10 0101 IN ZONE R THIS ZONE CONTROLLEDFOR
AUTOMATICHANDLING

5 DIMENSION f APPLIES BETWEEN DIMENSION P

AND L DIMENSION D APPLIES BETWEEN

DIMENSION LANDK MINIMUM. LEAD DIAMETER

IS UNCONTROLLED IN DIMENSION P AND
BEYONDDIMENSION K MINIMUM

Characteristic

Thermal Resistance. Junction to Case

Symbol

M.ix

Unit

R0jc

C W

(11This device is designed lor RF operation. The total device dissipation rating applies
only when the device is operated as a Class C RF Amplifier.

INC HES

MILUMETERS
DIM

THERMAL CHARACTERISTICS

A
B
C
0
E
r

MAX

MIN

9 29

0 355

0366

801

850

0 315

0180

: 20

45?

0 165

041

:-::

0017

014

088

0 017

0021
oc;;

041

043

0016

0019

508 BSC

072 | 086

074 j 101

J
K

12 70

635

M
P

IS 05
_

0200 BSC
0029

0034
0040

0 5M

0 750

002B

0250

45 BSC

- | .77
254 | -

0100

TO-206AF

(TO-39)

2-490

45" BSC

CASE 79-05

MOTOROLA RF DEVICE DATA

MAX

0050
-

MRF229
ELECTRICAL CHARACTERISTICS (Tc = 2SC unless otherwise noted)
Characteristic

Symbol

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR|CEO

V(BR)CES

V(BR)EBO

4.0

Vdc

(lc = 25mAdc, lB = 0)
Collector-Emitter Breakdown Voltage

Uc=25mAdc,VBE"0l
Emitter-Base Breakdown Voltage

(IE = 0.25 mAdc. Iq-O)

Collector Cutoff Current

ICBO

0.5

mAdc

IVCB-15Vdc,lE=0)
ON CHARACTERISTICS

hFE

DC Current Gain

5.0

(lC - 250 mAdc, Vqe - 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

C0b

(Vcb " 12.5 Vdc, lg - 0, f 1.0 MHz)

FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain

GpE

(Vce " 12.5 Vdc, Pout 1.5 W, f = 90 MHz)

Collector Efficiency

(Vce " 12.5 Vdc, Pout = 15 W, f = SO MHz)

Load Mismatch

<Vcc-12.5Vdc.Pout=1-5W.

No Degradation in
Output Power

f-90MHz.Tc<25C)

FIGURE 1-90 MHz TEST CIRCUIT SCHEMATIC

CI
5.0 80 pF. ARCO 462
C2.C6 25-280 pF. ARCO 464
C3
250 pF UNELCO
C4
10 pF UNELCO

9.0-180 pF. ARCO 463

1000pF UNELCO
0.47 pf ERIE Disc Ceramic

20 pF. 15 Vdc TANTALUM

2 Turns. #18 AWG. 3/8" I.D. 3/8" Long

2.5 Turns, #20 AWG, on Ferrita Bead.
FERROXCUBE 56-590-65-3B

3 Turns, SM8 AWG, 3/8" I.D.. 1/2" Long

0.68 uH, 9230-16 MILLER Molded Choko
Ferrita Bond, FERROXCUBE 56-590 65-3B
4.7 OHM. 1/2 W. 1016 Carbon

Input/Output Connectors Type BNC

MOTOROLA RF DEVICE DATA

2-491

MRF229

FIGURE 3 - OUTPUT POWER versus FREQUENCY

FIGURE 2 - OUTPUT POWER versus INPUT POWER

VCC
50 MHi

Pin-150 mW

90 MHz

2.0

.100 mW

SOmW

g: 1.0
VCc= 12.5V

100

150

60
70
(.FREQUENCY (MHi)

Pin! INPUT POWER (mW)

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

2.5

Pin* 150 mW
l 90 MHi

Vce. SUPPLY VOLTAGE (VOLTS)

SERIES EQUIVALENT OUTPUT IMPEDANCE

SERIES EQUIVALENT INPUT IMPEDANCE

Zql* - Conjugate oftheoptimum loadimpedance intowhich thedevice output

operates at a given output power,voltageand frequency.

MOTOROLA RF DEVICE DATA

2-492

100

EPQARUILV 1RUESIT0ANC S

MRF229

FIGURE 7 - PARALLEL EQUIVALENT INPUT CAPACITANCE

FIGURE 6 - PARALLEL EQUIVALENT INPUT RESISTANCE

versus FREQUENCY

versus FREQUENCY
1

Vcc = 12BVdc
Pout= 1-5W

Vce 12.5 Vdc

Pout15W

-|20

3 5200
is

U
Js10

FIGURE 9 - PARALLEL EQUIVALENT OUTPUT CAPACITANCE

versus FREQUENCY

FIGURE 8 - PARALLEL EQUIVALENT OUTPUT RESISTANCE

versus FREQUENCY

Vce 12.5 Vdc

Pout'1-5 W

VCC- 125 Vdc

Pout-1-5*

g80
uj

-J

I. FREQUENCY(MHi)

5 c 80
1

> B

2 2 6
-1

-J

2 40
IS

" 20

cS 20

100

I. FREQUENCY (MHi)

MOTOROLA RF DEVICE DATA

2-493

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF232

The RF Line

7.5 W - 90 MHz

RF POWER
TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON

...designed for 12.5 Volt, mid-band large-signal amplifier appli

cations in industrial and commercial FM equipment operating in the

40 to 100 MHz range.

Specified 12.5 Volt, 90 MHz Characteristics Output Power = 7.5 Wans

Minimum Gain = 9.0 dB

Efficiency = 55%

100% Tested for Load Mismatch at all Phase Angles with 30:1

Characterized with Series Equivalent Large-Signal Impedance

VSWR

Parameters

Characterized with Parallel Equivalent Large-Signal Impedance

Parameters

MAXIMUM RATINGS
Rating

Symbol

Value

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

Unit

VEBO

4.0

Vdc

Collector Current Continuous

2.0

Adc

Total DeviceDissipation @Tg 25C (1)

Derate above 25C

Storage Temperature Range
Stud Torque (2)

Tstg
-

Watts

114

mW/C

-65 to +150
6.5

STYlil:

PIN 1. EMITTER
2 BASE
3. EMITTER
4 COLLECTOR

NOTES:
1. DIMENSIONINGAND TOLERANCINGPER ANSI
YU.SM. 1982
2 CONTROLLINGDIMENSION:INCH.

In. Lb.
DM
A

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

RejC

8.75

C/W

C
0
E

MtlUMETERS
MIN
MAX
9.40
9.73
20.07

0.320
0670

0790

5.46

5.97

0.215

0235

0.070
0C03

0007

1.78

0.03
12.45
140

only when the device is operated as a Class C RF Amplifier.

12) For repeated assembly use 5 In. Lb.

R
S
T
U

0.18

1.78

0.490

0055

45 NOM

(1) This device is designed for RF operation. The total device dissipation rating applies

1.27

2-494

0070

45'NOM

0050

7.59

7.80

0.299

0J07

4.01

4.52

0.159

0.178

2-11
2.49

*54

0.083

0100

3.35

ores

0.132

CASE 145A-09

MOTOROLA RF DEVICE DATA

0330

8.13
17.02

K
L

838

INCHES
MIN
MAX
0.370
0335

MRF232

ELECTRICAL CHARACTERISTICS (Tc= 25C unless otherwise noted.)

Symbol

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

V(BR)CES

V(BR)EB0

4.0

Vdc

OC" 50 mAdc, lB = 0)
Collector-Emitter Breakdown Voltage

Vdc

(lc = 50 mAdc, VBE = 0)

Emitter-Base Breakdown Voltage

llE = 2.5mAdc, lc-0)

Collector Cutoff Current

'CBO

1.0

mAdc

(VCB= 15 Vdc. Ie = 0)
ON CHARACTERISTICS
DC Current Gain

hFE

He - 500 mAdc, Vce = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

C0b

<VCB- 12.5 Vdc. 1 = 0. f = 1.0 MHz)

FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain

Gpe

9.0

(VCC- 12.5Vdc,Pout=7.5W,f = 90 MHz)

Collector Efficiency

<VCc = 12.5 Vdc, Pout = 7.5 W, f = 90 MHz)

Load Mismatch

(VCc " 12-5 Vfc. Pout = 7.5 W,

No Degradation in
Output Power

f =90MHz.Tc<25C)

FIGURE 1 - SO MHz TEST CIRCUIT SCHEMATIC

#*-&

er^\
M

>
C2

*r> C3

C1.C6

5.0-80 pF. ARCO 462

C2.C5

9.0 180 pF, ARCO 463

FERROXCUBE VK200 20-4B Ferrite Choke

C3.C4

100 pF UNELCO

3 Turns, #18 AWG, 5/16" I.D., 3/8" Long

1000 pF UNELCO

10 Turns. #22 AWG. on R1

4.7 pF, 15 Vdc. TANTALUM

340 Ohm. 1 W Carbon

3 Turns. #18 AWG, 3/8" I.O., 3/8" Long

Input/Output Connoctors - Type BNC

MOTOROLA RF DEVICE DATA

2-495

MRF232

FIGURE 2 - OUTPUT POWER versus INPUT POWER

Vce 12.5

FIGURE 3 - OUTPUT POWER versus FREQUENCY

^ Pin-0.75W

^
50 M Hz
8.0

| 7.0

~\^

0.5 W

S 6.0

g 5.0

^^
\

Vce 12.5 V

0.4

0.6

.INPUTPOWER WATTS)

f. FREQUENCY (MHi)

FIGURE 4 -OUTPUT POWER versus SUPPLY VOLTAGE

FIGURES - SERIES EQUIVALENT IMPEDANCE

Pin-0.75 W
f-8 0 MHz

115i5.0 \
11.CH5.2 J*
9.8i5.65
9.815.65

t-"i
10

100

3.0il0 I 7.0-J6.8
7.0-J6.B V

Vet SUPPLY VOLTAGE (VOLTS)

2qi* = Conjugate oftheoptimum toad impedance intowhich Ihedevice output

operatesal a given outputpower, voltage andfrequency.

MOTOROLA RF DEVICE DATA

2-496

MRF232

FIGURE 6 - PARALLEL EQUIVALENT INPUT RESISTANCE

FIGURE 7 - PARALLEL EQUIVALENT INPUT CAPACITANCE

versus FREQUENCY

versus FREQUENCY
1000

1
Vr.r-12.5 Vdc

.Vce 12.5 Vdc

Pout" 7-5W

Pout 7.5W
800
i-

>~I5

^IlO
~ 5 5.0

100

I, FREQUENCY (MHz)

FIGURE 8 - PARALLEL EQUIVALENT OUTPUT RESISTANCE

versus FREQUENCY

f. FREQUENCY (MHi)

CfQlE
AUinLIV.PEAl (CIANNpPPCUFEIl1

FIGURE 9 - PARALLEL EQUIVALENT OUTPUT CAPACITANCE

versus FREQUENCY
O
o

Vce -12.5 Vdc

Vce 12.5 Vdc

Pout* 7-5W

Pouf 7.5W

-x20
-> X

> o 300
a

28
5 -

I. FREQUENCY(MHz)

I. FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-497

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF233

The RF Line
15 W - SO MHz

RF POWER
TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON

...designed for 12.5 Volt, mid-band large-signal amplifier appli

cations in industrial and commercial FM equipmentoperating in the
40 to 100 MHz range.

Specified 12.5 Volt, 90 MHz Characteristics Output Power = 15 Watts

Minimum Gain = 10 dB

Efficiency = 55%

100%Tested for Load Mismatch at all Phase Angleswith

30:1 VSWR

Characterized with Series Equivalent Large-Signal Impedance

Parameters

Characterized with Parallel Equivalent Large-Signal Impedance

Parameters

STYLE 1
MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VebO

4.0

Vdc

Collector Current Continuous

3.5

Adc

Total Device Dissipation @Trj =25C(1)

Derate Above 25C

Storage Temperature Range
Stud Torque (2)

Tstg
-

Watts

285

mW/C

-65 to +150

6.5

Inlb

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

RflJC

3.5

PIN 1 EMITTER
2. BASE
3 EMITTER
4 COLLECTOR

NOTES
1 DIMENSIONINGAND TOLERANCINGPER ANSI
Y145M. 1932
2 CONTROLLING DIMENSION:INCH

MILLIMETERS
MN

940

97a

813
1702

838

0.320

0330

20.07

0670

0.790

5.97

0.215
0.070

0235

0.003

0007

Unit

E
J

C/VV

L
M
P
R

(1) This device is designed for RF operation. The total device dissipation rating applies
only when the device is operated as a Class C RF Amplifier.
(2) For repeated assembly use 5 In. Lb.

INCHES
MM
MAX

S
T
U

1.78
003

12.45
1.40

MAX

0.18

178
45* NOM

7.59
4.01

127

0370

0490

2-498

0055

0070
45 NOM

0050
0307

780

0.239
0.158

0178

2.11

452
2.54

0083

2.49

335

0.098

0100
0132

CASE 14SA-09

MOTOROLA RF DEVICE DATA

0385

MRF233

ELECTRICAL CHARACTERISTICS!^ = 25C unless otherwisenoted).

Symbol

Characteristic

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

V(BR)CES

V(BR)EBO

4.0

Vdc

(lC* 100mAdc, I13-O)

Collector-Emitter Breakdown Voltage

(lc = 50mAdc, Vbe -0)

Emitter-Base Breakdown Voltage

Vdc

(lg 5.0 mAdc, lC0)

Collector Cutoff Current

'CBO

1.0

mAdc

(VCB - 15 Vdc, lE - 0)
ON CHARACTERISTICS

DC Current Gain

5.0

hFE

(lC = 1 0 Adc, VCE ' 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

cob

100

120

(Vcb * 12-5 Vdc> 'E " - ' " 10 MHz)

FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain

Gpe

(VCc 12-5 Vdc- pout = 15 W, f = 90 MHz)

Collector Efficiency

(VCc = 12.5 Vdc, Pout - 15 W, f = 90 MHz)

Load Mismatch

No Degradation in

<Vcc-12.5Vdc.Pout=1SW,

Output Power

f =90 MHz, TC25C)

FIGURE 1 - 9 0 MHz TEST CIRCUIT SCHEMATIC

-*-

rg> ^_ r* -1_

Input >-

C1.C3
C2.C4
C5
C6
C7
LI

9.0 180 pF, ARCO 463

25-280 pF ARCO 464
1000 pF UNELCO
0.01 fiF ERIE Disc Ceramic
1.0 flF, 35 Vdc TANTALUM
2 Turns. #18 AWG. 3/8" I.D.. 1/4" Long

0 22 *JH, 9230 04 MILLER Moldod Choko

2.2 MH. 9230200 MILLER Molded Choko

L4
LS

2 Turns, ft 18 AWG. 3/8" I.D.. 3/8" Long

10 Turns, #16 AWG. Wound On R2.

15 Ohm. 1/2 W. 10% Carbon

68 Ohm. 1 Wott. 10% Carbon

Input/Output Connoctors - Typo BNC

MOTOROLA RF DEVICE DATA

2-499

MRF233

FIGURE 2 - OUTPUT POWER versus INPUT POWER

FIGURE 3 - OUTPUT POWER versus FREQUENCY

Vce 12.5 \
1.5 W

_ 20

MHi

Pin 1J)W

""-

0.SW

2.
tr

90 MHi

5 to

>5.0

Vce-12.5 V

1.0

1.5

2.0

Pin. INPUTPOWER(WATTS)

100

I. FREQUENCY(MHi)

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 5 - SERIES EQUIVALENT IMPEDANCE

Pin-1.5 W

8.0

9.0

VCC.SUPPLYVOLTAGE (VOLTS)

Zql' = Conjugate ofthe optimum load impedance into which thedevice output
operates at a given output power, voltage andfrequency.

MOTOROLA RF DEVICE DATA

2-500

MRF233

FIGURE 7 - PARALLEL EQUIVALENT INPUT CAPACITANCE

FIGURE 6 - PARALLEL EQUIVALENT INPUT RESISTANCE

versus FREQUENCY

Vce 12.5Vdc
Pout-15 W
8.0

SS6.0

til 4.0
3
jj
i z 2.0

CPARoLuEt. COUATP 8g

I. FREQUENCY(MHz)

I. FREQUENCY (MHt)

FIGURE 0 - PARALLEL EQUIVALENT OUTPUT CAPACITANCE

FIGURE 8 - PARALLEL EQUIVALENT OUTPUT RESISTANCE

versus FREQUENCY

versus FREQUENCY
500

VCC=12.5 Vdc
Poul-15 W

Vce-12.5 Vdc
Pout* 15W
400

S5 '6

is
= S

g ST

= z 300

UJ -

< ta
s

100

I. FREQUENCY (MHt)

I, FREQUENCY(MHi)

MOTOROLA RF DEVICE DATA

2-501

100

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF234

The RF Line
25 W - 90 MHz

RF POWER

TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON

...designed for 12.5 Volt, mid-band large-signal amplifier appli

cations in industrial and commercial FM equipment operating in the
40 to 100 MHz range.

Specified 12.5 Volt, 90 MHz Characteristics Output Power = 25 Watts

Minimum Gain = 9.5 dB

Efficiency = 55%

100% Tested for Load Mismatchat all Phase Angleswith

30:1 VSWR.

Characterized with Series Equivalent Large-Signal Impedance

Parameters

Characterized with Parallel Equivalent Large-Signal Impedance

Parameters

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VcEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

Vdc

vEBO

4.0

Collector Current Continuous

4.0

Totel Device Dissipation @Tc " 25C (1)

Watts

400

mW/C

Derate above 25C

Storage Temperature Range
Stud Torque (2)

Tstg
-

Adc

-65to+150

6.5

In. Lb.

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Symbol

RfljC

Max
2.5

Unit

C/W

(1)This device is designed for RFoperation. The total device dissipation rating applies
only when the device is operated as a Class C RF Amplifier.
. (2) For repeated assembly use 5 In. Lb.

STYLE 1
PIN 1 EMITTER
2 BASE

3 EMITTER
4 COLLECTOR

NOTES

1 DIMENSIONING ANDTOLERANCING PERANSI

V14 5M. 1982

2 CONTROLLING DIMENSION: INCH

OEM
A

MUIMETERS
Mn
MAX
940

9.18
833
2007

813

1702

548
178

597

008
1245

018

E
J
K

I
M
P

140

178
45* NOM

1.27

INCHES
KM
MAX
0370
0385
0330
0320
0790
0670
0215

0070
0003

0490

0055
0070
45 NOM

0050

759

780

0239

401

4.52

0.158

0178

211
249

254

0083

0100

335

0098

0132

CASE 145A-09

2-502

S
U

MOTOROLA RF DEVICE DATA

0235
0007

0307

MRF234

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.)

Symbol

Characteristic

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR|CEO

V(BR)CES

Vdc

V(BR)EBO

4.0

Vdc

(lC 200 mAdc. IB = 0)

Collector-Emitter Breakdown Voltage

<IC - 200 mAdc, VB 0)

Emitter-Base Breakdown Voltage

(IE-5.0mAdc, lc-0)
Collector Cutoff Current -

CBO

1.0

mAdc

<VCB= 15 Vdc, Ie-0)

ON CHARACTERISTICS

hFE

DC Current Gain

5.0

(lC- I.OAdc, VCe = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

C0b

100

120

(VCB= 12.5Vdc, Ie = 0,I = 1.0MHz)

FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain

Gpe

9.5

(VCc = 12.5 Vdc. Pout - 25 W. f = 90 MHz)

Collector Efficiency

(VCC" 12.5 Vdc, Pout - 25 W. f = 90 MHz)

Load Mismatch

No Degradation in
Output Power

<VCc=12.5Vdc.P0Ut=25W.

f-90MHz,TC<25C

FIGURE 1 - 90 MHz TEST CIRCUIT SCHEMATIC

)V Q
CnR
*+.
Ou

C1.C4

5.0-80 pF, ARCO 462

22 pH. 9230 52 MILLER Moldod Choke

C2.C3

25-280 pF, ARCO 464

2 Turns. #14 AWG. 3/8" I.D.. 1/4" Long

10OOpFUNELCO

10 Turns. #18 AWG. 1/4" I .D.. wound on R2

0.047 (iF. ERIE disc ceramic

IOuF. 16 Vdc TANTALUM

15 Ohms. 1/2 W, 10%

47 Ohm, 1 W Carbon

1 Turn, #16 AWG. 3/8" I.D.. 1/8" Long

0.22 pH. 9230 04 MILLER Molded Choko

Input/Output Connector Typo BNC

MOTOROLA RF DEVICE DATA

2-503

MRF234

FIGURE 2 - OUTPUT POWER versus INPUT POWER

FIGUR E 3 - OUTPUT POWER versus FREQUENCY

VCC" 12.5 V.
t- 30

xSOMHr

^^SOMHz

2.0

3.0

P,n. INPUTPOWER(WATTS)

I. FREQUENCY(MHt)

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE S - SERIES EQUIVALENT IMPEDANCE

Pm* 3.0 W
f 90 MHi

1
Ul

S 20
3

J'0
0

8.0

9.0

10
11
12
13
14
Vce.SUPPLYVOLTAGE (VOLTS)

Zol* - Conjugate oftheoptimum load impedance into which thedevice output

operates at a given output power, voltage andfrequency.

MOTOROLA RF DEVICE DATA

2-504

MRF234

FIGURE 6 - PARALLEL EQUIVALENT INPUT RESISTANCE

versus FREQUENCY

FIGURE 7 - PARALLEL EQUIVALENT INPUT CAPACITANCE

versus FREQUENCY
2000

VCC' 12.SVdc
Pout 26W

Vce 12.5Vdc
Pout 25W
z -S.0

<
>

x
o

^^_

'
3fe
< ui dO

EL
QUCPEtAVRAoLEL0Nm.(ACpITOUNFPAECIT/

Cjo.PAR INPUT

I. FREQUENCY (MHz)

1;o>
0

I, FREQUENCY (MHi)

FIGURE 8 - PARALLEL EQUIVALENT OUTPUT RESISTANCE

FIGURE 9 - PARALLEL EQUIVALENT OUTPUT CAPACITANCE

versus FREQUENCY

1000

Vce-125 V'dc
Pout' 25 W

Vce-125 Vdc

Pout* 25 W

SCJ8.0
<

z rr 800
^

= 5

2 S6.0

._.

ce 5 4.0

(.FREQUENCY (MHi)

f. FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-505

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF237

The RF Line
4W-175MHz

NPN SILICON RF POWER TRANSISTOR

RF POWER
TRANSISTOR

... designed for 12.5 Volt large-signal power amplifier applications

in communication equipment operating to 225 MHz.

NPN SILICON

Specified 12.5 Volt, 175 MHz Characteristics Output Power = 4.0 Watte
Minimum Gain = 12dB

Efficiency = 50%

Characterized With Series Eouivalent Large-Signal Impedance

Parameters

Grounded Emitter TO-39 Package for HighGain and Excellent

Heat Dissipation

Replaces Medium Power Stud Mount Devices

MAXIMUM RATINGS
Rating

Symbol

Value

vCEO
VCBO
vEBO
<C
PD

Vdc

4.0

Vdc

Collector-Emitter Voltage

Collector-8ase Voltage
Emitter-Base Voltage
Collector Current - Continuous

Total PowerDissipation @Jq- 25C

Derate above 25C

Storage Temperature Range

Unit

1.0

Adc

8.0

Watts

45.7

mW/C
C

Tstg

-65 to +200

Symbol

Max

Unit

RflJC

C/W

s+,r^
STYLES
PIN 1. COLLECTOR
2 BASE

| | <fr 0.36 IP 0141 | T| A| H|

3 EMITTER

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case

ELECTRICAL CHARACTERISTICS <TC 25C unless otherwise noted.)

Characteristic

| Symbol | Min | Typ | Max | Unit |

VfBRICEO

Vdc

3. DIMENSION J MEASURED FROM DIMENSION A

4 DIMENSION B SHALLNOT VARYMORETHAN025
10.0101IN ZONE R. THISZONE CONTROLLED FOR
AUTOMATIC HANDLING

MAXIMUM

Collector-Emitter Breakdown Voltage

(lC "5.0 mAdc, Vbe-0)

V(BR)CES

Emitter-Base Breakdown Voltege

V(BR)EBO

4.0

Vdc

(VCB= 15Vdc, lE-0)

'CBO

0.25

mAdc

IS UNCONTROLLED IN DIMENSION P AND

BEYOND DIMENSION K MINIMUM.
MILOMETERS

ON CHARACTERISTICS
DC Current Gain

5 DIMENSION F APPLIES BETWEEN 0IMENSI0NP

ANDI DIMENSION 0 APPLIES BETWEEN
DIMENSION I AND K MINIMUM.LEADDIAMETER

(lg= I.OmAdc. Ic = 0)
Collector Cutoff Current

1. DIMENSIONING ANDT0LERANCING PERANSI

YI4.5M. 1932.
2 CONTROLLING DIMENSION: INCH

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

dC = 10 mAdc, Ib = 0)

NOTES

"FE

5.0

MAX

902

9?9

801
420

850
457

0355
0.315

0366
0335

0.165

044

0017

044

088
043

0017

0180
0021
0035
0019

C
0

0C - 250 mAdc, VC = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

(VCB = 15 Vdc, l - 0, f - 0.1 MHz)

G
H
J

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

I
M

Gre

IPout" 4.0 W, VCC - 12.5 Vdc,

f= 175 MHz!

Collector Efficiency

lpout" 4.0 W, VCC = 12.5 Vdc,

INCHES

MW
A

041

SOS BSC
06$

072
074

12.70
635

101
1905

45* BSC
1.27

254

0016
0203 BSC
0034

0028

0040
0750
0250
45 BSC
0050
0100
0029
0500

CASE 79-05
TO-206AF

(TO-39)

f- 175 MHz)

MOTOROLA RF DEVICE DATA

2-506

MRF237

FIGURE 1 - 17SMKz TEST CIRCUIT SCHEMATIC

7p C7

ic8
C8 C9^
C9 7^

12.5 Vdc
<-

:6
C6

S*Z Ou tput

L2
JVYYL

Input

^r-

3*C1

C1.C4.C5
C2
C3
C6
C7
C8
C9
CIO

5nC2

3.0- 180 pF, ARCO 463

1/2 Turn, #16 AWG. 0.5" I.D.

1.75- 30 pF, ARCO 461

40 pF, UNELCO
0.01 uF, ERIE
0.1 UF. ERIE REDCAP
1-OjlF, TANTALUM
1000 pF, UNELCO
100pFUNELCO

L2
L3

1". #16 AWG

0.76" #16 AWG

L4.L5

1 Turn. #16 AWG. 0.5" I.D.

0.15 MH Moldod Choke

1.2 UH Moldod Choke

Beads

FERRITE Beads, FERROXCUBE

#56 570-65/3B

FIGURE 3 - OUTPUT POWER versus FREQUENCY

FIGURE 2 - OUTPUT POWER versus INPUT POWER

6.0

1
2b0 mW

5.0

150n W

5 4.0

4.0

80mW

s
1-

3.0
1-

Vce

75 MHz.

VCC= 2.5 Vdc

12.5V

I 2.0

2.0

1.0

100

200

ISO

300

160

170

1,FREQUENCY (MHz)

Pin. INPUTPOWER (mW)

FIGURE S - SERIES EQUIVALENT IMPEDANCE

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

6.0

5.0

| 4.0
a.

| 3.0
1-175 MHz

Pin-2 00 mW "
s

2.0

1.0

8.0

9.0

11
12
13
14
VCC.SUPPLY VOLTAGE (VOLTS)

Zol' = Conjugate ofthe optimum load impedance into which the device output

operates at a given output power, voltage andfrequency.

MOTOROLA RF DEVICE DATA

2-507

MOTOROLA

SEMICONDUCTOR

IY1RF240

TECHNICAL DATA

MRF240A

The RF Line
40 W - 145-175 MHz

RF POWER
TRANSISTORS

NPN SILICON RF POWER TRANSISTORS

... designed for 13.6 volt VHF large-signal class C and class AB

NPN SILICON

linear power amplifier applications in commercial and industrial

equipment.

High Common Emitter Power Gain

Specified 13.6 V, 160 MHz Performance:

Output Power = 40 Watts
Power Gain = 9.0 dB Min

Efficiency = 55% Min

Load Mismatch Capability at Rated Voltage and RF Drive

Silicon Nitride Passivated

Low Intermodulation Distortion, d3 =-30 dB Typ

MAXIMUM RATINGS
Rating

Collector-Emitter Voltage

Symbol

Value

Unit

Vdc

Collector-Base Voltage

Vceo
vCBO

Vdc

Emitter-Base Voltage

vEBO

4.0

Vdc

'C
PD

8.0

Adc

100

Watts

0.57

W/OC

Tstg

-65 to +150

Collector Current Continuous

Total Oevice Dissipation @Tc = 25C ID

Derate above 25C

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case 12)

Symbol

Max

Unit

RflJC

1.75

C/W

ID This device is designed for RF operation. The total device dissipation ratingapplies
only when the device is operated as an RF amplifier.

(2) Thermal Resistance is determined under specified RF operating conditions by infra

red measurement techniques.

STYU1:
pin i. emttes
2. BASE
3 EMITTER
ICOUiCTOd

NOTES

1. DCUENSIONMG ANDTOURANONGPENANSI
Y14SM. 1932

2. CONINXUNG DOOMSON. INCH

MumrExs

smii

PM1 EUCTH

wits

imrrnn

I. RUENSIOKKG ANDTOURANCINGPCD
ANSI VMM. 19(2
.

4C0UKTO

i ccttraouMGMaNSON not

IDASE

MAX

9.40
913

9 79
139
2007
5J7

17.02

HUMtms
OM
A

1
C

9
I

MAX
u

0370

713
596
2
457

OJP

0390
orn

216
Ml
0"
tow

SO1

q
R
S

2(9
633
mi

IMS

H
t

MRF240A
CASE 211-07

MM
2439
9J
Ml
S47

OtS

330
617
20S7
lM

0215
00*5
0150
octx
0395
C
0113
024S
0790
oto

01N

pros
0
V
0130

Pff5
0110
07M

1.79
137

0070
coca
0499

0037

0055
0070
45* NOM

7.SS
401

7*>
452

0151

0050
0307
0171

3.11
2.43

2M
335

0C3
0099

0100
0132

oas

45'NOM

01M

MOTOROLA RF DEVICE DATA

2-508

1.71
009
12.45
1.40

me*s
MH
MM

news
MM
MAX
0370
0339
0320
0330
0170
0790
0735
0315

0399

CASE14SA-09
MRF240

MRF240, MRF240A

ELECTRICAL CHARACTERISTICS (Tc - 25C unless otherwise noted)

Typ

Unit

Max

Symbol

Min

V(BR)CE0

V(BR|CES

V(BR|EB0

4.0

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

(lc 20 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage

Vdc

(lc - 20 mAdc, VBE = 0)

Emitter-Base Breakdown Voltage

Vdc

(lE - 5.0 mAdc, lc - 0)

Collector Cutoff Current

CBO

mAdc

(Vcb" 15 Vdc, Ie = 0)

ON CHARACTERISTICS

DC Current Gain

"FE

150

125

(lC - 4.0 Adc, VCE 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output. Capacitance

Cob

(VCb = 12.5 Vdc, lE - 0. f * 1.0 MHz)

FUNCTIONAL TESTS

Gpe

Common-Emitter Amplifier Power Gain

9.0

(Vce " 13.6 Vdc, Pout - 40 W, f - 160 MHz)

Collector Efficiency

IVcc - 13.6 Vdc, Pout = 40 W, f = 160 MHz)

TYPICAL SSB PERFORMANCE

IMD(d3)

Intermodulation Distortion (1)

-30

(Vce 13.6 Vdc. Pout = 35 W(PEP),

f 1 = 146 MHz, f2 = 146.002 MHz,

ICQ" 50mAdc)
(1) To MIL-STD-1311 Version A, Test Method 22048, Two Tone, Reference Each Tone.
FIGURE 1 - 160 MHz TEST CIRCUIT SCHEMATIC
C10
-o

}|
CI

<RF Output

T&-*

IS.*

7SC3
*T>

j RFC1

^:c4

7&C

Boed

200 pF. 350 Vdc. UNELCO

100 pF. 350 Vdc. UNELCO
40 pF. 350 Vdc. UNELCO
80 pF. 350 Vdc, UNELCO

C10.C11 680 pF ALLEN BRADLEY Food thru

1.020 pF, ARCO Trlmmor

100 pF 350 Vdc. UNELCO

Bead

FERROXCUBEBoad

HFC3

FERROXCUBE Choke. VK200-4B

RFC1
HFC2

1.2 x 0.6 cm Brass Pad

0.15 mH Moldod Choke

10 Turns. #18 AWG on 470 Ohm.

1.2 x 0.6 cm Brass Pad and

1 Watt Resistor

Board:

0.1 pF ERIE Disc Ceramic

3.3 x 0.2 cm AIRLINE Inductor

1.0 MF TANTALUM

1.0 x 0.2 cm AIRLINE Inductor

MOTOROLA RF DEVICE DATA

2-509

2.0 x 0.2 cm AIRLINE Inductor

G10. r * 5. t - 62 mils
2 sided, 2 oz. Clad

Connectors:

Typo N

MRF240, MRF240A

FIGURE 2 - POWER GAIN versus FREQUENCY

FIGURE 3 -

OUTPUT POWER versus INPUT POWER

Pout 40 W

vce- 13.6 V

"*f 145 MHi

5
o

* 160 MHz
1

9.0

1* 175 MHr

160

170

2.0

3.0

f. FREQUENCY (MHt)

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 5 - OUTPUT POWER versus SUPPLY VOLTAGE

145 MHz

160 MHz

Pin *
12

4.0

P,n. INPUT POWER(WATTS)

<ia vi

1
4.0W

- 4.0"W
'30 W

5
i-

8.0

9.0

8.0

9.0

VCC.SUPPLYVOLTAGE (VOLTS)

FIGURE 6 - OUTPUT POWER versus SUPPLY VOLTAGE

175 MHz

Pin" 5.0W "

I .
= 4.0 W

= 3.0 W

'/
>.0

.14

Vce. SUPPLY VOLTAGE IV0LT.S)

Vce. SUPPLY VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-510

MRF240, MRF240A

FIGURE 7 - SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES

MOTOROLA RF DEVICE DATA

2-511

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF247

The RF Line
75 W -

175 MHz

CONTROLLED Q

RF POWER

NPN SILICON RF POWER TRANSISTOR

TRANSISTOR

. . . designed for 12.5 Volt VHF large-signal amplifier applications

in industrial and commercial FM equipment operating to 175 MHz.

NPN SILICON

Specified 12.5 Volt, 175 MHz Characteristics Output Power = 75 Watts

Minimum Gain = 7.0 dB

Efficiency = 55%

Characterized With Series Equivalent Large-Signal Impedance

Internal Matching Network Optimized for Minimum Gain

Parameters

Frequency Slope Response Over the Range 136 to 175 MHz

Load Mismatch Capability at Rated Pout and Supply Voltage

tIT

STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. EMITTER
4 BASE

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Vdc

Collector-Emitter Voltage

vCEO

Collector-Base Voltage

VcbO

Vdc

Emitter-Base Voltage

vEBO

4.0

Vdc

Collector Current Peak

Total Device Dissipation @Tq = 25C (1)

Derate Above 25C
Storage Temperature Range

Adc

250
1.43

Watts

Ts9

-65 to +150

W/C

NOTE

FLANGE IS IS0L4TED INAIL STYLES

KUBKTBIS

Characteristic

Thermal Resistance, Junction to Case

Symbol
(2)

RfljC

Max
0.7

MCKES
MAX
KN

DM
A

KW
2433

MAX
25-14

0960

0990

Unit

1245

1295

0490

0510

5.97

7.62

0.235

C/W

C
D

533

558

0210

0300
0220

E
f

2.16

304

0065

0170

503

5.33
1854

0200
0720

015

0004
0.405

0.210
0730
0006

THERMAL CHARACTERISTICS

(1) This device is designed for RF operation. The total device dissipation rating applies
only when the device is operated as an RF amplifier.

H
J

(2) Thermal Resistance is determined under specified RF operating conditions by infra

red measurement techniques.

1829
010

1029
381

11.17

406

0150

381

431

0.150

a
R
U

2.92
305

330

0115

330

11.94

12.57

0120
0470

CASE 316-01

MOTOROLA RF DEVICE DATA

2-512

0440

0160
0.170
0.130
0.130

0495

MRF247

ELECTRICAL CHARACTERISTICS <TC - 25C unless otherwise noted

Characteristic

Typ

Symbol

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V{BR)CEO

V(BR)CES

V(BR(EB0

4.0

Vdc
-

(lc 100 mAdc, lB - 0)

Collector-Emitter Breakdown Voltage

Vdc

(lC - 50 mAdc, VBE 0)

Emitter-Base Breakdown Voltage

Vdc

(lE 10 mAdc, lc " 0)

ON CHARACTERISTICS

DC Current Gain

hpE

150

235

300

(lC - 5.0 Adc, VCe = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

C0b

Output Capacitance

(VCB - 15 Vdc, lE = 0, f = 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

GPE

7.0

8.5

(Vce " 12-5 Vdc- pout " 75 Watts, f - 175 MHz)

Collector Efficiency

(Vce " l2-5 Vdc. pout " 75 Watt$. f " 175 MHz)
Load Mismatch

No Degradation In Output Power

(VCc " 12.5 Vdc, Pout = 75 Watts, f 175 MHz,

VSWR = 30:1 All Phase Angles)

FIGURE 2 - POWER GAIN versus FREQUENCY

FIGURE 1 - OUTPUT POWER versus INPUT POWER

150 M
175 M

Hr^>

136 M

vec-

4.0

6.0

8.0

Pout W
Vce 125 V

12.5 V

ISO

160

I, Frequency (MHz)

Pin INPUTPOWER (WATTS)

MOTOROLA RF DEVICE DATA

2-513

MRF247

FIGURE 3 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

136 MHz

150 MHz

I
Pin'

I2WN

8.0 W^ks

>"< y^
>>

^ y <^

***~

^A 4y
4>'
.

Vce SUPPLY VOLTAGE (VOLTS)

Vce. SUPPLY VOLTAGE (VOLTS)

FIGURE S - OUTPUT POWER versusSUPPLYVOLTAGE

175 MHz

FIGURE 6 - SERIES EQUIVALENT IMPEDANCES

Pin 12 Wv

8.0WN

| 10D
S

60
3
40

11
12
13
14
15
Vce. SUPPLY VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-514

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF260

The RF Line
5W

136-175 MHz

RF POWER
TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON

... designed for 12.5Volt VHFlarge-signal power amplifier appli

cations in commercial and industrial equipment.

Low-Cost Common-Emitter TO-220AB Package

Specified 12.5 V, 175 MHz Performance:

Output Power

5.0 Watts

Power Gain

10 dB Min

Efficiency

55% Min

Load Mismatch Capability at High Line and Rated RF Input

Other Devices in the Series:
MRF261
MRF262
MRF264

10 Watts
15 Watts
30 Watts

! rn *.._rf
MAXIMUM RATINGS
Symbol

Valuo

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VcBO

Vdc

VebO

4.0

Vdc

Collector Current Continuous

1.0

Adc

Total Device Dissipation @Tc " 25C (1)

Watts

68.5

mW/C

Tstg

-65 to+ 150

Rating

Emitter-Base Voltage

Derate above 25C

Storage Temperature Range

Thermal Resistance, Junction to Case (2)

: EMITTER

3 COLLECTOR

NOTES

4 EMITTER

1 KUENSOWNG AK0 TOLERANOKG PERANSI

Y145M. 1962

1 C0NTROUJNGDIMENSION INCH

3 OUUKmESAZONEWHEREALlSOOYANO
IEA0 IRREGUtARITIES AREALLOWED

Symbol

Max

Unit

RfljC

14.6

C/W

(1) This device is designed for RF operation. The total device dissipation rating applies
only when the device is operated as an RF amplifier.

(2) Thermal Resistance is determined under specified RF operating conditions by infra

red measurement techniques.

mas

KUJWTBS
MAX

MAX

1441

15)5

0510

0630

966

ton

0340

0<05

0160

0193
0035
OH?

THERMAL CHARACTERISTICS
Characteristic

STYLE?
PIN1DASE

401

0C4

1.4J

H
1

ISO
036

OH
3)3
264
393
055

1270

143)

115

n,
0
i*

139
533
3M
in
1
64?

s
T

264
!04

115

59)
ON

115

0035
0143

009}
0110
0014

0055

0190
0-100

0310
0120

0060
00(5

0055

0?P
00)0

00<5
-

CASE 221A-04
TO-220AB

MOTOROLA RF DEVICE DATA

2-515

0033

0500
00*5

13)
304 1

0105
0155

-W

0110
0355
OOSO

0060

MRF260

ELECTRICALCHARACTERISTICS (Tc- 25C unless otherwise noted)

Characteristic

1 Symbol |

Min

V(BR)CEO

V(BR)CES

v(BR|EBO

4.0

Typ

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lc- 10 mAdc, Ib=0)

. Collector-Emitter Breakdown Voltage

(lc-5.0 mAdc, VBE-0)

Emitter-Base Breakdown Voltage

(lf-1.0 mAdc, le^O)

Collector Cutoff Current

'CBO

(vCb 15 vdc, Ie*oi

Vdc

0.25

mAdc

ON CHARACTERISTICS
DC Current Gain

hFE

(lC " 250 mAdc, Vce 5.0 Vdc)

DYNAMIC CHARACTERISTICS
Output Capacitance

Cob

IVcb = 15 Vdc, lE 0. f - 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

Gpe

<VCc " 12.5 Vdc, Pout = 5.0 W, f - 175 MHz)

Collector Efficiency -'

(VCc = 12.5 Vdc, Pou't = 5.0 W. f - 175 MHz)

FIGURE 1 - 175 MHz TEST CIRCUIT

< RF Output
C3

RF Input >-

^Cl

7-A

C1 -

40 pF Underwood

C2, CS - Johanson Trimmer WJMC-5501

C3 60 pF Underwood
C4 25 pF Underwood
C6 1000 pF Underwood
C7 - 0.1 JiF Erie Red Cap
C8 - IOOjuF Electrolytic. 15 V

LI - 1-1/2 Turns, #18 AWG. 3/16" ID. I = 1/8"

L2 - 3 Turns. #18 AWG. 5/16" ID. I - 1/4"
r -

ion. LOW

B -

Ferroxcube Bead 56-590-65-3B

RFC1 -

0.15 uH Molded Coil

RFC2 - 0.15 uH Molded Coil

RFC3 -

Ferroxcubo VK200 20 4B

Board Material:

Teflon Fiborglass G10, thicknoss - 0.062 inches.

MOTOROLA RF DEVICE DATA

2-516

MRF260

FIGURE 3 - OUTPUT POWER versus INPUT POWER

FIGURE 2-- POWER GAIN versus FREQUENCY

1 138 MHt

7.0

^ ...

!g 6.0

ISO MHz
Hi

S4U

B.U

o 3.0

Fout-5 OW
b.U

\ /CC'1 Z.5V

Vce 12.5 V

4.U

1.0

n
130

1SO

1 SO

1 ID

1.2

180

170

0.3

0.4

0.5

0.6

0.7

Q.f

Pin,INPUT POWER (WATTS)

f, FREQUENCY (MHz)

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 5 - OUTPUT POWER versus SUPPLY VOLTAGE

138 MHz

150 MHz

6.0

8.0

6.0

8.0

VCC. SUPPLY VOLTAGE (VOLTS)

VCC, SUPPLY VOLTAGE (VOLTS)

FIGURE 6 - OUTPUT POWER versus SUPPLY VOLTAGE

176 MHz

6.0

8.0

VCC.SUPPLY VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-517

MRF260

FIGURE 7 - SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES

FIGURE8- 175 MHz TEST AMPLIFIER

MOTOROLA RF DEVICE DATA

2-518

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF261

The RF Line
10 W

136-175 MHz

NPN SIUCON RF POWER TRANSISTOR

RF POWER
TRANSISTOR

... designed for 12.5 VoltVHF large-signal power amplifierappli

NPN SILICON

cations in commercial and industrial equipment.

Low-Cost, Common-Emitter TO-220AB Package

Specified 12.5 V, 175 MHz Performance

Output Power = 10 Watts
Power Gain = 5.2 dB Min

Efficiency = 50% Min

Load Mismatch Capability at High Line and RF Overdrive

Other Devices in the Series
MRF260
MRF262
MRF264

5.0 Watts
15 Watts
30 Watts

MAXIMUM RATINGS
Symbol

Value

Unit

Collector-Emitter Voltage

VcEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

Collector-Current Continuous

2.0

Adc

Total Device Dissipation @ Tc = 25C (1)

Watts

171

mW/C

-65 to +150

Rating

Derate above 25C

Storage Temperature Range

smt?
PIN 1 BASE

2 EMITTER

Tstg

3 COLLECTOR
4 EMITTER

NOTES

1 DIMENSIONING ANOTOLERANCING K ANSI

YI4 5M. 1983

3 CONTROLLING DIMENSION INCH

3 IXM2 DEFINES A ZONEWHERE ALLBOOT AND

LEADIRREGULARITIES AREALLOWED

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case (2)

Symbol

Rwc

Max
5.85

Unit

c/w

(1)This device is designed for RFoperation. The total device dissipation rating applies
only when the device is opereted as an RF amplifier.
(2) Thermal Resistance is determined under specified RF operating conditions by infrared
measurement techniques.

MCKES

KUWHtSS

DIM
A

1441

966

407

064

361

342

310

MAX
1575
1038
483
OH
373
366
393

MM
0670
0380
0160

0035

0147
0105

036

055

0014

13 70

1437

I
N

139

0500
004S

483

354

R
s
T

1.04
H5
597

379
139
647

000

V
z

US
-

137
_

304

0190
0100
0080
004S

0315
0000
0045
-

CASE 221A-04
TO-220AB

MOTOROLA RF DEVICE DATA

2-519

019)
0035

0143

0O5

0095
OHO

533
304

MAX

0630

0155
0033

05S3
0055
03t0
0130
0110
0055
03S5
0050

0080

MRF261

ELECTRICAL CHARACTERISTICS (Tc =25C unless otherwisenoted)

Characteristic

Symbol

Mln

Collector-Emitter Breakdown Voltage

dC = 50 mAdc, Is = 0)

V(BR)CEO

Vdc

Collector-Emitter Breakdown Voltage

dC = 50 mAdc. Vbe = o

V(BR)CES

Vdc

Emitter-Base Breakdown Voltage

dE = 2.5 mAdc, lc = 0)

V(BR)EBO

4.0

Typ

Max

UnH

OFF CHARACTERISTICS

Collector Cutoff Current

CBO

(VCB = 15Vdc, l=0)

1.0

Vdc

mAdc

ON CHARACTERISTICS
DC Current Gain

hpE

dC = 250 mAdc, VCE= 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

C0b

(VCB = 15Vdc. IE = 0, f = 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

(Vce = 12.5 Vdc. Pout = 10 W. f = 175 MHz)

Collector Efficiency

(Vce = 12.5 Vdc, P0ut = 10 W, f = 175 MHz)

Gpe

5.2

7.0

FIGURE 1 176-MHz TEST CIRCUIT

r^^r-^
<RF Ou

CI 10 pF Underwood

L1 - 2 Turni. #18 AWG. 5/16" ID

U2 - 1-1/2 Turns. #18 AWG. 5/16" I

C2, C6 Johanson Trimmer #5501

C3 60 pF Underwood
C4 - 150 pF Underwood
C5 100 pF Underwood

R - ion. LOW
B -

Ferroxcube Bead 56-590-65-38

RFC1 - 0.15 pH Molded Coil

RFC2 - 6 Turns #18 Wire, 5/16" ID

C7, C8 15 pF Underwood
C9 1000 pF Undorwood

RFC3 -

C10 - 0.1 pf Erie Red Cap

C11 - 100 pF Electrolytic. 15 Vdc

VK200-20/4B

Board Material Teflon Fiberglass

t - 0.062"

MOTOROLA RF DEVICE DATA

2-520

MRF261

FIGURE 3 - OUTPUT POWER versus INPUT POWER

FIGURE 2 - POWER GAIN versus FREQUENCY

VCc-12-5 W
Po ,-iow

1- 136 MHj.

=150MHix\

vec- 12.5 V

= 175MH*

140

ISO

1.0

160

2.0

3.0

Pjn.INPUT POWER (WATTS)

f. FREQUENCY (MHi)

FIGURE 5 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

150 MHz

136 MHz
20

^Pj'n-lOW

X" Pin"4-W

2.5W

2.51 V

1.01 1
= LOW

8.0

VCC.SUPPLY VOLTAGE (VOLTS)

Vce,SUPPLY VOLTAGE (VOLTS)

FIGURE 6 - OUTPUT POWER versus SUPPLY VOLTAGE

175 MHz

Pin=4.0W

~ 1.0 w

VCC. SUPPLY VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-521

MRF261

FIGURE 7 - SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES

MOTOROLA RF DEVICE DATA

2-522

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF262

The RF Line
15 W

136-175 MHz

RF POWER
TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON

... designed for 12.5Volt VHFlarge-signal power amplifier appli

cations in commercial and industrial equipment
Low-Cost Common-Emitter TO-220AB Package

Specified 12.5 V, 175 MHz Performance:

Output Power
15 Watts
Power Gain

6.3 dB Min

Efficiency

55% Min

Load Mismatch Capability at Rated Voltage and RF Drive

Other Devices in the Series:
MRF260
MRF261
MRF264

5.0 Watts
10 Watts
30 Watts

turns
turn

<fr

L*-j

MAXIMUM RATINGS

h
Value

Unit

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

I-J

Emitter-Base Voltage

VebO

4.0

Vdc

Collector Current Continuous

2.5

Adc

Total Device Dissipation @> Tc =25C (1)

Watts

225

mW/C

Storage Temperature Range

Tstg

-65 to+150

Symbol

Derate above 25C

P^"'t

Rating

HE]

*1C

JT~

N U-

*}-i

PINS BASE

1EMITTER

3COLLECTOR
4 EMITTER

NOTE!

1 0 MENSIOMNGAM) TOliMNCING PE* ANSI

Y AMI. 1962

2 0 ONTROUING DIMENSION INCH

} 0 311 DEFINESA 20NE WHEREAil. BOOVAND
I AD IRREGULARITIES ARE AUOWE0

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

MUMETERS '

Unit

C/W
4.38
R9JC
(1) This device is designed for RF operation. The total device dissipation rating applies

Thermal Resistance. Junction to Case (2)

only when the device is operated as an RF amplifier.

(2) Thermal Resistance is determined under specified RF operating conditions by infra

MAX

urn

14(8

I5 75

06)0

966

1 MAX

0620

03S3 | 0*05 |

407

I02S
4S2

064

068

361

373

0142 1 0147

266

0095 ; 0105

red measurement techniques.

INCHES

242

393

036

12 70

055
1427

l
N

115
483

0
R

254
204

>I5

T
U
V

597
00)
115

0160 ! 0190 '

0025 1 0036

0110

1 0155

0014 1 0022

0500 1 0562

139

0045 1 0055

633
304

0190 1 0210

279

0000
0045

0110
0055

0236

0265

139
647
127

204 i

0103 1 0120

0KO | 0050
0045 1

CASE 221A-04
TO-220AB

MOTOROLA RF DEVICE DATA

2-523

1 0060

MRF262

ELECTRICAL CHARACTERISTICS (Tc- 25C unless otherwise noted)

Characteristic

| Symbol |

Min

V(BR)CEO

VfBRICES

V(BR)EBO

4.0

Typ

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

dC -20 mAdc, lg = 0)
Collector-Emitter Breakdown Voltage

(lC-10 mAdc. Vbe-0)

Emitter-Base Breakdown Voltage

(IE "2.0 mAdc. lc = 0)

Collector Cutoff Current

CBO

(VCB-15Vdc, lE=0)

Vdc

0.5

mAdc

ON CHARACTERISTICS
DC Current Gain

"FE

(Ip-500 mAdc.Vqe " 5.0 Vdc)

DYNAMIC CHARACTERISTICS
Output Capacitance

Cob

(VCb * 15 vdc. 'e o.f " 1 0 MHi

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

Gpe

6.3

8.2

(VCC " 125 Vdc, Poul - 15 W. f - 175 MHz)

Collector Efficiency

(VCC- 12.5 Vdc, Pout - 15 W. f - 175 MHr)

FIGURE 1 - 175 MH* TEST CIRCUIT

RF Input y

]((RF Output

CI 10 pF Underwood

LI L2 -

C2, C6 Johanson Trimmer #5501

C3 60 pF Undorwood

2 Turns. #18 AWG. 5/16" ID

1-1/2 Turns. #18 AWG. 5/16" ID

R-10D, LOW
B Ferroxcube Bead 56-590-65-38

C4 - ISO pF Underwood
C5 100 pF Underwood
C7, C8 - 15 pF Undorwood
C9 1000 pF Undorwood

RFC1 - 0.15pH Moldod Coil

HFC2 - 6 Turns #18 Wire. 5/16" ID
RFC3 -

CIO - 0.1 pF Erio Rod Cap

C11 - 100 uF Electrolytic. IS Vdc

VK200 20/4EJ

Board Material Toflon Fibarglots

t - 0.062"

MOTOROLA RF DEVICE DATA

2-524

MRF262

FIGURE 2 - POWER GAIN versus FREQUENCY

FIGURE 3 - OUTPUT POWER versus INPUT POWER

- 136 MHz

i20
is

"150 MHi

Poufl5W
Vce* 12.5 V
1

150

160

2.0

I, FREQUENCY (MHi)

3.0

Pin.INPUTPOWER (WATTS)

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 5 - OUTPUT POWER versus SUPPLY VOLTAGE

136 MHz

150 MHz

Pin'2.25 W

1
-1.5V1

-0.75

Pin-2.25W

H
3

-1.5W

0.75W

ty
4.0

6.0

8.0

4.0

VCC.SUPPLYVOLTAGE(VOLTS)

6.0

8.0

VCC.SUPPLY VOLTAGE (VOLTS)

FIGURE 6 - OUTPUT POWER versus SUPPLY VOLTAGE

175 MHz

0.75W

2.0

4.0

6.0

8.0

VCC.SUPPLYVOLTAGE(VOLTS)

MOTOROLA RF DEVICE DATA

2-525

MRF262

FIGURE 7 - SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES

FIGURE B -

175 MHz TEST AMPLIFIER

MOTOROLA RF DEVICE DATA

2-526

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF264

The RF Line
30 W

136-175 MHz

NPN SILICON RF POWER TRANSISTOR

RF POWER
TRANSISTOR

... designed for 12.5-volt VHF large-signal power amplifier applica

tions in commercial and industrial FM equipment.

NPN SILICON

Low-Cost, Common-Emitter TO-220AB Package

Specified 12.5 V, 175 MHz Performance
Output Power = 30 Watts
Power Gain = 5.2 dB Min

Efficiency = 60% Min

Load Mismatch Capability at High Line and RF Overdrive

Other Devices in the Series

MRF260

5.0 Watts

MRF261

10 Watts

MRF262

15 Watts

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

Rating

VCEO

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

Collector-Current Continuous

6.0

Adc

Total Device Dissipation @ Ta = 25C (1)

80
0.64

Watts

mW/C

-65 to+150

Derate above 25C

Storage Temperature Range

Tstg

felt
...

l J

STVU2:
PIN 1. BASE

7. EMITTER
1C0UECT0A
4 EMITTER

NOTES

1 DIMENSIONING AND TOIERANONG PERANSI

Y14SM. ISM
2 CONTROUINGDIMENSION:INCH
} WZ DEFINESA ZONE WHERE All 600Y AW
LEAD IRREGULARITIESARE AUOWED
M0 ms

KWMtTtRS

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case (2)

Symbol

Max

Unit

R0JC

1.56

C/W

MAX

MAI
>M
407
on

IS 75

0570
0390
0160

0620
0405

002S
0142

003S
0147

0095

0105
0155

C
0
F

W
on

J1
t
3 S3

0110

0014

0072

WTO

14 77

0500

IIS
410

139

0045

0SS2
0055

0190

0210

254

304

otoo

0120

304
US
5S7

139

oots
0235

i
K
I

t
u
v

000

IIS

(47
127

204

0000
004S
-

CASE 221A-04
TO-220AB

MOTOROLA RF DEVICE DATA

2-527

0190

Ml
Jit
taj
OK

(DThis device is designed for RF operation. The total device dissipation rating epplies
only when the device is operated as an RF amplifier.
(2) Thermal Resistance is determined under specified RF operating conditions by infrared
measurement techniques.

ton

0110
0OS5
0755
OOSO

MRF264

ELECTRICAL CHARACTERISTICS (Tc =25c unless otherwisenoted)

Unit

Symbol

Min

Collector-Emitter Breakdown Voltage

dC = 20 mAdc, Ib = 0)

V(BR)CE0

Vdc

Collector-Emitter Breakdown Voltage

V(BR)CES

Vdc

V(BR)EBO

4.0

Vdc

Characteristic

Typ

Max

OFF CHARACTERISTICS

(lc = 20 mAdc, Vbe = 0)

Emitter-Base Breakdown Voltage
dE = 5.0 mAdc. lc = 0)
Collector Cutoff Current

Ices

(VCB = 15Vdc, lE = 0)

5.0

mAdc

ON CHARACTERISTICS
DC Current Gain

"FE

dC = 500 mAdc, Vce = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance
(VCB = 15 Vdc. IE = 0. f = 1.0 MHz)

C0b

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

Gre

5.2

6.0

(Vce = 125 Vdc. Pout = 30 W. f = 175 MHz)

Collector Efficiency

(Vce = 12.5 Vdc. Pout = 30 W. f = 175 MHz)

FIGURE 1 - 175 MHz TEST CIRCUIT

RF Input))-

^RF Output

C1. C5 1.0-20 pF Johanson

C2 - 25 pF Unolco
C3
C4
C6
C7

120 pF Unelco
100 pF Unolco
15 pF Unolco
1000 pF Unolco

C8 0.1 pF Erlo Rodcop

C9 - 100 pF, Eloctrolytic. 15 Vdc

2-1/2 Turns, #16 AWG 0.35" ID

2 Turns, #16 AWG 0.25" ID
0.15 pH Molded Choko

RFC1 -

5 Turns. #18 AWG 0.25" It

RFC2 -

Ferroxcube VK200 21/4B

R1 - 10n, 2.0W
B -

Forroxcubo Boad 56 590 65-3B

MOTOROLA RF DEVICE DATA

2-528

MRF264

FIGURE 2 - POWER GAIN versus FREQUENCY

FIGURE 3 - OUTPUT POWER versus INPUT POWER

VCc'12.5 V

P0UI* 30 W
VCC 12.5 V

3.0

I = 136 M H*.

'1S0M Hi
= 17SM

HrN

2 6.0
a

S.0

4.0

150

160

1.0

2.0

3.0

I, FREQUENCY (MHz)

4.0

5.0

6.0

7.0

8.0

FIGURE 5 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 4 - OUTPUT POWER SUPPLY VOLTAGE

150 MHz

136 MHz
70

-Pln

^^
"flow
6.0W.S O^

**"

6.0Ws "O

>* :>

o
t-

9.0WJ
^~

L<3KV --*"

*^~ _
*^~

VCC. SUPPLY VOLTAGE (VOLTS)

FIGURE 6 -

OUTPUT POWER versus SUPPLY VOLTAGE

175 MHz

| 50

. Pi*'

o:
.

9.0

Pin. INPUT POWER (WATTS)

12WS
9.0W J hs
ROW

r\^r^

^*"-"

Vce. SUPPLY VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-529

MRF264

FIGURE 7 - SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES

Pout" 30W. Vce *125V

Zin

ZOL*

Ohms

150

1.44 +J1.4
1.S5+|l.92

175

I.67 + J2.22

4.16+ J0.48
336 +J0.65
3.59 + jl.W

1
MHz

136

Zqi' Conjugate of ths optimum load impedance

into which tha device oparates at a given
output power, voltage, and Irtquancy.

MOTOROLA RF DEVICE DATA

2-530

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF313

The RF Line

1.0 W - 400 MHz

HIGH FREQUENCY
TRANSISTOR
NPN SILICON

NPN SILICON HIGH FREQUENCY TRANSISTOR

... designed for wide band amplifier, driver or oscillator applications
in military, mobile, and aircraft radio.

Specified 28 Volt, 400 MHz Characteristics Output Power = 1.0 Watt

Minimum Gain = 15 dB

Efficiency = 45%.

Emitter Ballast and Low Current Density for Improved MTBF

Common Emitter for Improved Stability

MAXIMUM RATINGS
Rating

Value

Unit

Collector - Emitter Voltage

VcEO

Vdc

Collector - Base Voltage

VCBO

Vdc

Emitter - Base Voltage

VebO

3.0

Vdc

150

mAdc

6.1

Watts

mW/C

Collector Current - Continuous

Total DeviceDissipation @Tq 25C

Derate above 25C
Storage Temperature Range

Tstg

-65 to +150

Thermal Resistance, Junction to Case

Symbol

Max

Unit

RflJC

28.5

C/W

STYLE 1:
PIN 1. EMITTER

2. BASE
3. EMITTER
4. COLLECTOR

MILLIMETERS
DIM
A

0
E
F

THERMAL CHARACTERISTICS
Characteristic

=Q=

rr"

Symbol

J
K
M

INCHES
MAX

MIN
SOB
2.41

MAX

5.59

0.200

0220

3.30

0095

0130

1.40

1.65
1.27

0065
0.055
0050
0.M0
0.035
0.025
0007
0003
0435
45 NOM

102
064
0.08

0.89
0.18

11.05
45 NOM

CASE 305A-01

MOTOROLA RF DEVICE DATA

2-531

MRF313

ELECTRICAL CHARACTERISTICS (Tc - 25Cunless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

VfBRICES

Vdc

V(BR)CBO

Vdc

V(BR)EBO

3.0

Vdc

|lc 10mAdc, lB = 0)
Collector-Emitter Breakdown Voltage

(lC-5.0 mAdc. VBE-0)

Collector-Base Breakdown Voltage

(IC-0.1 mAdc, Ie-0)

Emitter-Base Breakdown Voltage

(lE = 1.0mAdc. lrj-0)

Collector Cutoff Current

'CEO

1.0

mAdc

(VCe - 20 Vdc, lB 0)
ON CHARACTERISTICS

DC Current Gain

. hFE

(lC = 100 mAdc, Vce = 10 Vdc)

150

DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product

2.5

GHz

0c- 100 mAdc, VCE - 20 Vdc, f 200 MHz)

Output Capacitance

3.5

C0b

(Vcb " 28 Vdc, l - 0, f 1.0 MHz)

5.0

FUNCTIONAL TEST

Common-Emitter Amplifier PowerGain''"

Gpa

(VCC - 28 Vdc, Pout = 1.0 W, f - 400 MHz)

Collector Efficiency

(VCfj - 28 Vdc, Pout = 1.0 W, f - 400 MHz)

Series Equivalent Input Impedance

Zin

6.4-J4.8

Ohms

IVCC - 28 Vdc, Pout - 1.0 W. f 400 MHz)

Series Equivalent Output Impedance

75-J45

Zout

(VCc " 28 Vdc, Pout - 1.0 W, f - 400 MHz)

Ohms

(1) Class C

FIGURE 1-400 MHz POWER GAIN TEST CIRCUIT

t < +

^ Cai *28 Vdc

<
Output

RF Input >

C1.C2.C4
C3
CS
C6

C7.C8
C9

1.0-20 pF JOHANSON 9063

1.0-10 pF JOHANSON
150 pF Chip
0.1 uF

6S0 pF Feedthru
1.0 UF TANTALUM

L1.L3
L2

5 Turns, AWG #20, W I.D.

Ferrita Bud. FERROXCUBE
No. 66-590-65/48

FERROXCUBE VK200-20/4B

Input/Output Connectors Type N

Board - Glass Teflon, e - 2.56, t - 0.062"

MOTOROLA RF DEVICE DATA

2-532

4.7 Ohms. X W

2.0" x 0.1" MICROSTRIP LINE

Z2.Z3

2.6" x 0.1" MICROSTRIP LINE

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF314
MRF314A

The RF Line
30 W-30-200 MHz

RF POWER
TRANSISTORS

NPN SILICON RF POWER TRANSISTORS

NPN SILICON

. .. designed primarily for wideband large-signal driver and output

amplifier stages in the 30-200 MHz frequency range.

Guaranteed Performance at 150 MHz, 28 Vdc

Output Power = 30 Watts
Minimum Gain - 10 dB

100% Tested for Load Mismatch at All Phase

Angles with 30:1 VSWR

Gold Metallization "System for High Reliability Applications

KUHZTERS
om
a

MAX
2514

12439

.._

9*L, 0370_

940

7t3

tT"S47"
MRF314

0215

0235

216

266

0085

0105

3(1 i

457

01H

OISJ

Oil

015

OKU

0006

0395

0405

M !
0

Rating

Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous

Total Device Dissipation@Tc =25C (1)

Derate above 25C

Storage Temperature Range

CASE 211-07

Symbol

vCEO
VcBO
VEBO
'C
PD

Tstg

Value

Unit

Vdc

4.0

Vdc

Adc

Watts

0.47

W/C

-65 to+150

0229

MAX

0S
0393
0281

_i_

MAXIMUM RATINGS

MCKES
KM
0960

596

I0M 1 1028
r
21)

50
330

641

0113
0245

X
0130
02

2057
1854

0790
0720

oto
07M

943 : . 9.76

0370

113 ! 838

0320
0670
0215
0070
0003
0490

623
2007

1829

THERMAL CHARACTERISTICS
Characteristic

Thermel Resistance, Junction to Case

Symbol

Max

Unit

RflJC

2.13

C/W

(1)Thesedevices aredesigned forRF operation. The totaldevice dissipation

STYLE I
PIN 1 EMITTER
2BASE
3 EMITTER
4 COUECTOR

ratingappliesonly when the devices areoperated as RF amplifiers.

c
0
E
J
(

MRF314A

CASE 14SA-09

MOTOROLA RF DEVICE DATA

2-533

I
M

1702

546

1 2007

I7J

597
-

001 | 018
1245

140 1 178
45-NOM
759
401

211 1 254

00S3

249

0091

127
780
452

0235
-

0037

0055
0070
45 OM

t
R
S
T

0335
0330
0790

0299
0158

0050
0M7 I
0178
0100
0133

MRF314, MRF314A

ELECTRICAL CHARACTERISTICS (Tc - 25Cunless otherwise noted)

Characteristics

Typ

Symbol

Min

V(BR)CEO

Vdc

V(BR)CES

Vdc

V(BR)CBO

V(BR)EBO

4.0

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

<IC =30mAdc, lB-0)

Collector-Emitter Breakdown Voltage

(lC - 30 mAdc, Vgff =0)

Collector-Base Breakdown Voltage

Vdc

tlC =30mAdc, lE=0)

Emitter-Bese Breakdown Voltage

(lE = 3.0 mAdc. lc " 0)

Collector Cutoff Current

'CBO

Vdc

3.0

mAdc

(VcB-30Vdc, lE-0)
ON CHARACTERISTICS

DC Current Gain

hFE

(lC=1.5Adc, VCE'

5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

C0b

(VCb " 30 Vdc, l - 0, f - 1.0 MHz)

FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain

Gpe

13.5

(VCc " 28 Vdc, Pout = 30 W, f = 150 MHz)

Collector Efficiency

IVCc " 28 Vdc, Pout - 30 W. f - 150 MHz)

Load Mismatch

(Vce 28 Vdc, Pout = 30 W. f ISO MHz,

No Degration in Power Output

VSWR -30:1 all phase angles

FIGURE 1 -

150 MHz TEST CIRCUIT

OOC +28 Vdc

]^V-V-V>

-_^

1^<^RF 0utput

RF Input y~)\

CI. C7 - 18 pF. 100 mil ATC

C2 - 68 pF, 100 mil ATC
C3, C6 - Johanson #JMC S501
C4 CS -

R1. R2- 10 n. LOW

RFC1 -

15 uH Moldod Coll

RFC2 - 2 Turns. 2.5" #20 Wiro. ID - 0.2"

270 pF, 100 mil ATC

240 pF. 100 mil ATC

RFC3 -

C8, C9 100 pF Underwood

Forroxcube VK200-19/4B

CIO 1.0 uF Tantalum

Z1 - Microstrip 0.168" W x 1.6" L

22 - Microstrip 0.168" W x 1.2" L

LI -

Board Glass Teflon eR =B2.B5

2 Turns, 2.8" #20 Wire, ID - 0.275"

MOTOROLA RF DEVICE DATA

2-534

MRF314, MRF314A

TYPICAL PERFORMANCE CURVES

FIGURE 2 - OUTPUT POWER versus INPUT POWER

30 MHz

70 MH;

50 MH

ISO MHi

100 MHi

200 MHi

3
i-

VCC. 28 V

3
O

5.0
1.0

P.n. INPUT POWER (WATTS)

FIGURE 3-- OUTPUT POWER

versus

INPUT POWER

30
-

50 MHi

30 MH r

7OMHi

100 MHi

- n

.-M
700 M Hi
lb

n v

5.0

S
Pjn.INPUT POWER IWATTSI

FIGURE 5 - EFFICIENCY (n%) versus FREQUENCY

FIGURE 4 - POWER GAIN versus FREQUENCY

50
30 W

VCC

60 '

28 V

100

120

vec-

m-30*vs's

140

160

ISO

200 220

f. FREQUENCY(MHi)

100

120

140

f. FREQUENCY(MHi)

MOTOROLA RF DEVICE DATA

2-535

160

28 V

180

200

220

MRF314, MRF314A

FIGURE 6 - SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCE

Zin

ZOL*

MHz

OHMS

18.0-J12.1
16.5-J12.1
15.0-jl 1.8
12.9 -jlO.8
11.9-J9-4

2.4 -J3.4

1.6-12.6

0.8 -jO.8
0.7 -jO.5
0.9+ J0.9
1.3+J1.2

100
150

200

11.5-J8.1

Zql' = Conjugate ofIhe optimum load impedance into which thedevice output operates at a given output power, voltage andfrequency.

FIGURE 7 -

TEST FIXTURE

MOTOROLA RF DEVICE DATA

2-536

MOTOROLA

SEMICONDUCTOR

MRF315
MRF315A

TECHNICAL DATA

The RF Line
45 W -

30-200 MHz

RF POWER
TRANSISTORS

NPN SILICON RF POWER TRANSISTORS

NPN SILICON

... designed primarily for wideband large-signal output amplifier

stages in the 30-200 MHz frequency range.

Guaranteed Performance at 150 MHz, 28 Vdc

Output Power = 45 Watts

Minimum Gain = 9.0 dB

100% Tested for Load Mismatch at All Phase

style i

Angles with 30:1 VSWR

PIN 1. EMITTER

J.MS

Gold Metallization System for High Reliability Applications

3 CUITTER
4 COLLECTOR

TT
WUWETERS
KJ

tux

A
t

2439
9*0
5*2
547

216

H
J
K
M

3 SI
Oil
1004

oseo
0310
urn
0215
0085
0150

MRF315

"1
596
266
457
015

2SS
633

R
S
u

990

CASE 211-07

INCHES

2007

182?

KM
0J

0393
0711

ore
0105
otao
in
0405
w
OIM

ton
so330
64?

0395

2057
1854

079)

0J55
0110

0720

0730

40-

0113
me,

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

Vceo

Vdc

Colfector-Bese Voltage

vCBO

Vdc

Emitter-Base Voltage

vEBO

4.0

Vdc

'C
PD

4.0

Adc

110

Watts

0.63

W/C

Collector Current Continuous

Total DeviceDissipation <> Tc " 25C (1)

Derate above 25C
Storage Temperature Range

STYLE 1

T*tg

-65 to +150

THERMAL CHARACTERISTICS

PIN I EMITTER

2BASE

3 EMITTER
4 COLLECTOR

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

RfljC

1.59

C/W

004

KHUMETERS
KM I MAX
9 40

] 978

(1) These devices are designed for RF operation. The total device dissipation

813 ; B38
170? 1 2007

rating applies only when the devices are operated as RF amplifiers.

546

j 597

178
003 1
1245 .

MOTOROLA RF DEVICE DATA

2-537

016

s
T

759
401

Ml
249

0670 I 0790
0215 | 0235
0070

0003 1 0007
0490 | -

I 1.78

0055 ! 0070

| 1.27

0299

1-40
45' NOM

MRF315A

CASE 145A-09

INCHES
KN . MAX

0.370 I 0.385
0320 I 0330

I 760
452

I 2W

1 335

45* NOM

1 0050
1 0307

0158 ' 0178

0033
0100

0098

1 0132

MRF315, MRF315A

ELECTRICALCHARACTERISTICS (Tc =25C unless otherwise noted)

Characteristics

Symbol

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(IC-40mAdc. IB0)

V(BRICEO

V(BR)CES

v(BR)CBO

Vdc

v(BR|EBO

4.0

Vdc

Collector-Emitter Breakdown Voltage

Vdc

(lC-40 mAdc, Vbe-0)

Collector-Base Breakdown Voltage

<IC-40mAdc, lE =0)
Emitter-Base Breakdown Voltage

(lE -4.0 mAdc, lc-0)

Collector Cutoff Current

'CBO

(Vcb = 30 Vdc, It:-0)

4.0

mAdc

ON CHARACTERISTICS
DC Current Gain

"FE

C - 2.0 Adc, VCE 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

IVcb - 30 Vdc, lE 0, f - 1.0 MHt)

FUNCTIONAL TESTS (Figure 1)

Common-Emitter Amplifier Power Gain

(Vce " 28 Vdc, Pout - 45 W, f = 150 MHz)

Collector Efficiency

GPE

9.0

(VCc - 28 Vdc, Pout - 45 W, f - 150 MHz)

Load Mismatch

(VCc - 28 Vdc, Pout - 45 W, f = 150 MHz,

No Degradation in Power Output

VSWR - 30:1 all phase angles)

FIGURE 1 - 150 MHz TEST CIRCUIT

HFC3
C9

-K
C1

^-v-v>^_r~^7~|_
- "6 jk

T )l
CI -

7rZ C4

TrZ C5

30 pF. 100 mil ATC

LI -0.5" #18 Wire

C2 - 47 pF, 100 mil ATC

C3, C7 - Johanson #JMC 6501
C4, CS - 200 pF, 100 mil ATC
C6-24pF, 100 mil ATC
CO - 27 pF, 100 mil ATC
C9. CIO - 100 pF Underwood

L2 - 2 Turns, 1.5" #20 Wire. ID - 0.15"

Z1. 22 - Microstrip 0.168" W x 1.25" L
RFC1 -

15 itH Molded Coll

RFC2 - 2 Turns, 2.5" #18 Wire, ID - 0.2"

RFC3 - Ferroxcube VK200-19/4B
J

C11 1.0 uF Tantalum

R1. R2- 10n. LOW

Board - Glass Teflon cr * 2.55

MOTOROLA RF DEVICE DATA

2-538

< RF
Output

MRF315, MRF315A

TYPICAL PERFORMANCE CURVES

FIGURE 2 -

OUTPUT POWER versus INPUT POWER

SO MHz

30 MHi

70 MHi

tilOO MHi.

t^KO MH*

200 MHi
20

vcc -*
10
0

0.03

0.05

0.3

0.5

1.0

Pin. INPUT POWER (WATTS)

FIGURE 3 - OUTPUT POWER versus INPUT POWER

30 MHz 50 MHi
70MHI
100 MHz -

ISO MHz -

200 MHz _

i: .5

5.0
0
0.03

0.3

0.5

1.0

Pjn. INPUT POWER (WATTS)

FIGURE 4 -

FIGURE 5 -

POWER GAIN versus FREQUENCY

EFFICIENCY versus FREQUENCY

pout" n w
80

P ,-45 W
vc C-28 V

40
100

100

140

I, FREQUENCY (MHz)

I. FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-539

MRF315, MRF315A

FIGURE 6 -

SERIES EQUIVALENT INPUT-OUTPUT IMPEDANCE

Zql" = Conjugate oftheoptimum load impedance into which thedevice output operates at a given output power, voltage I
FIGURE 7 -

TEST FIXTURE

MOTOROLA RF DEVICE DATA

2-540

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF316

The RF Line
80 W-30-200 MHz

CONTROLLED "Q"
BROADBAND RF POWER
TRANSISTOR
NPN SILICON RF POWER TRANSISTOR

NPN SILICON

... designed primarily for wideband large-signal output amplifier

stages in the 30200 MHz frequency range.

Guaranteed Performance at 150 MHz, 28 Vdc

Output Power = 80 Watts

Minimum Gain = 10 dB

Built-in Matching Network for Broadband Operation

100% Tested for Load Mismatch at all Phase Angles

with 30:1 VSWR

Gold Metallization System for High Reliability Applications

-rr

MAXIMUM RATINGS
Symbol

Value

Unit

Collector-Emitter Voltage

Rating

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Bete Voltage

VEBO

4.0

Vdc

9.0

Adc

Collector Current Continuous

Peak

Total Device Dissipation @Tq = 25C 11)

13.5

NOTE

220

Watts

1.26

W/C

Tstg

-65 to+150

Derate above 25C

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

STYIE1:
PIN1. EUTTTER
2. COLLECTOR
3. EMITTER

DM
A
B

Symbol

Max

Unit

RfljC

C/W

(1) This device is designed for RF operation. The total device dissipation rating applies
only when the device is operated as an RF amplifier.

tWS

FLANGE IS IS0LATE0 IN ALLSTYLES

C
D

KULWETERS
KN
MAX
2514
2438
I29J
1245
597
762
558
533
216
304

508

1829

010

1029
381
3B1

N
0
A
U

292
305
1194

MCHES
KN

0990

0.490

05tO

0.235

0300

0210

0.220
0120

0035
0200
0.720
0004

0.210

0440

406
431

0405
0150
0150

3.30

0115

0170
0130

330
12.57

0.120

0130

0.470

0495

533
1854
015
1117

CASE 31641

MOTOROLA RF DEVICE DATA

2-541

MAX

0960

0.730
0.006

0.160

MRF316

ELECTRICAL CHARACTERISTICS (Tc - 25Cunless otherwise notedl

Symbol

Characteristics

Typ

Unh

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

VfBRICEO

V(BR)CES

Vdc

Collector-Base Breakdown Voltage

(lC = S0mAdc, lE=0)

v(BR)CB0

Vdc

Emitter-Base Breakdown Voltage

v(BR)EB0

4.0

Vdc

(ICo50mAdc, Ib"0)
Collector-Emitter Breakdown Voltage

(lC-50 mAdc, VBE "0)

(IE-5.0 mAdc. lc-0)

Collector Cutoff Current

CBO

lVCB30Vdc, Ie-OI

5.0

mAdc

ON CHARACTERISTICS
DC Current Gain

"FE

lie - 4.0 Adc, Vce - S.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

C0b

130

200

IVCB - 28 Vdc, l - 0, f - 1.0 MHz)

NARROW BAND FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain

Gpe

(Vce " 28 Vdc. Pout - 80 W, f - 150 MHz)

Collector Efficiency

IVCc " 28 Vdc, Pout - 80 W, f = 160 MHz)

Load Mismatch

No Degradation in Power Output

IVCc - 28 Vdc, Pou, - 80 W CW, f - 150 MHz,

VSWR 30:1 atl phase angles)

FIGURE 1 - ISO MHz TEST AMPLIFIER

C12

;kc2 ic3 t{

"lOSSC

LI -0.8", #20 Wire

L2 - 1.0". #20 W Ira

C1 -22pF 100 mil ATC

C2, C3 - 24 pF 100 mil ATC

C4. C11 - 0.8-20 pF JMC #5501 Johanson

RFC1, RFC4- 0.15 MH Moldod Coll
RFC2, RFC3 Ferroxcubo Bead 50-59O-65-3B
RFC5 - 2.5". #20 Wire, 1.5 Turns

CS - 200 pF 100 mil ATC

C6 - 240 pF 100 mil ATC
C7 - Dipped Mica 1000 pF
C8 - 0.1 fiF Erie Red Cap
C9. C10, C12 - 30 pF 100 mil ATC

RFC6 -

Ferroxcubo VK200 -

ri - ion. 1/2W
R2, R3 - 10 fl, 1 W

C13 1.0 uF Tantalum

MOTOROLA RF DEVICE DATA

2-542

19/48

MRF316

TYPICAL PERFORMANCE CURVES

FIGURE 2 -

OUTPUT POWER versus INPUT POWER

120
30 MHz

100 MHi

50 MHt

ISO MHr

% 100

1 8
5

y
y

0.3

0.4

0.5

0.7

1.0

2.0

3.0

4.0

5.0

Pin.INPUT POWER (WATTS)

FIGURE 3 -

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

f = 100 MHz

POWER GAIN versus FREQUENCY

Pin'O-OW^

6.0 W

1"
CC

4.0 W

2.0 W

z
o

C-28V
a

6.0

100

140

VCC,SUPPLY VOLTAGE (VOLTS)

I. FREQUENCY (MHz)

FIGURE 6 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 5 - OUTPUT POWER versus SUPPLY VOLTAGE

f -150 MHz
I20

f - 200 MHz
110

Pin" 8.0 W

Pfc,-MW

6.0 W

4.0 W

4.0 W
in

2.0 W

2.0 W
60

k "

o? 30

VCC. SUPPLY VOLTAGE (VOLTS)

Vce.SUPPLY VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-543

MRF316

FIGURE 7 - SERIES EQUIVALENT INPUT-OUTPUT IMPEDANCE

1.2-J2.4
1.1-J2.2
0.3+J0.7
0.6+J1.2
0.9+J1.6
2.2+J0.3
0.3+J0.8

5.5-J6.8
4.5-J6.0
2.7-J3.5
2.3-J2.6
2.0-J1.7
1.9-11.3
2.0-J0.9

/>s^ TX/X / \ / \ A

Zol' = Conjugate olIhe optimum load impedance into which thedevice output operates ata given output power, voltage and frequency.
FIGURE 8 -

TEST FIXTURE

MOTOROLA RF DEVICE DATA

2-544

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF317

The RF Line
100W-30-200MHZ

NPN SILICON RF POWER TRANSISTOR

CONTROLLED Q
BROADBAND RF POWER
TRANSISTOR

. . . designed primarily for wideband large signal output amplifier

stages in 30-200 MHz frequency range.

NPN SILICON

Guaranteed Performance at 150 MHz and 28 Vdc

Output Power = 100W

Minimum Gain = 9 dB

Built-in Matching Network for Broadband Operation

100% Tested for Load Mismatch at All Phase Angles with

30:1 VSWR

Gold Metallization System for High Reliability

High Output Saturation Power - Ideally Suited for 30 W Carrier/

120 vV Peak AM Amplifier Service

Guaranteed Performance in Broadband Test Fixture

MAXIMUM RATINGS
Symbol

Value

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

vEBO

4.0

Vdc

Adc

Rating

Collector Current - Continuous

- Peak (10 seconds )

Total DeviceDissipation > Trj =25C (1)

STYLE1:
PIN1. EMITTER
2. COLLECTOR
3. EMITTER
4. BASE

18
270

Watts

1.54

W/C

-65 to +150

Derate Above 25C

Storage Temperature Range

Unit

Tstg

NOTE:
FLANGE IS ISOLATED IN ALLSTYLES.

THERMAL CHARACTERISTICS
Thermal Resistance. Junction to Case

(1) This device is designed for RF operation. The tc tal device

only when the device is operated as an RF amp lifier.

c/w

0.65

RJC
dis sipation

rating appl

MUM ETERS
MAX
S14

DIM

KIN

24.33

1245

12.95
7.62

$?'

D
E
F

533
216
soa

558
104

18.29

18.54

015

o.to
1023
381
381

Q
R

292
306

1194

5J3

1117

406
4.31

3.30
330
1257

M0 HES
MAX
0930
0.490
0510
0735
0J00
0210
0220
ones
0120
0J210
0200
0720
0730
0004
0006
0405
0440
KIN

0960

0150

0170

0115
0120

0130
0133

0470

0495

CASE 316-01

MOTOROLA RF DEVICE DATA

2-545

0160

0150

MRF317

ELECTRICAL CHARACTERISTICS (Tc 25Cunless otherwise noted.)

Characteristic

Symbol

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC 100 mAdc. Ig 0)

Collector-Emitter Breakdown Voltage

(lC- 100 mAdc. VBf = 0)

Collector-Base Breakdown Voltage

llc= 100 mAdc. lE-0)

Emitter-Base Breakdown Voltage

VlBRICEO

V(BR)CES

v(BR)CB0

V(BR)EBO

4.0

Vdc
-

Vdc

(Ir; = 10 mAdc. Irj - 0)

Collector Cutoll Current

(VCB - 30 Vdc. Ig

ICBO

5.0

mAdc

ON CHARACTERISTICS

DC Current Gain

(lC 5.0 Adc. Vce

hFE

200

250

5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

(Vcb 28 Vdc, lE

0.1

cob

1.0 MHz)

FUNCTIONAL TESTS (FIGURE 2)

Common-Emitter Amplifier Power Gain

GpE

9(1

clB

(VCc= 28 Vdc. P0u, = 100 W. 1= 150 MHz . lc<Max) - 6.5 Adc)

Collector Efficiency

(VCc= 28 Vdc, Pout = 100 W, f = 150 MHz , lc(Max) =6.5 Adc)

Load Mismatch

I-

No Degradation in Output Powei

(VCc = 28 Vdc. Pou| = 100 W CW.f 150 MHz.VSWR 30:1

all phase angles)

FIGURE 1 - BROADBAND (110-160 MHz) TEST FIXTURE

MOTOROLA RF DEVICE DATA

2-546

MRF317

FIGURE 2 - 110-160 MHz BROADBAND AMPLIFIER - TEST FIXTURE

LI -50nH

CI, C9 - 39 pF. 100 mil ATC

C2 - 120 pF. 100 mil ATC

L2 -6.0nH

C3. C4 - 360 pF, 100 mil ATC

L 3 - 8.0 nH

L4- 32 nH

CS 1000 pF Dipped Mica

RFC1 -

C6. C7 - 100 pF. 100 mil ATC

C8 - 18 pF, 100 mil ATC*

0.15 uH Molded Coil

RFC2. RFC3 - Ferroxcubo Bond 56-590-65/36

RFC4 - 1 Turn. #18 Wire. 2.0" L

CIO - 43 pF. 100 mil ATC

C11 - 60 pF, Underwood

RFCS -

Ferroxcube VK200 19/4B

CI2 0.1 uF Erie Redcep

C13 - 1000 pF. Underwood J102

RFC6 -

7 Turn*. #18 Wire, 0.3" ID

ri -

i o n 1/2W

R2, R3 - 10 n 1 W
'Combination of C6. C7, C8 oquals 220 pF.

FIGURE 4 - SERIES EQUIVALENT

INPUT-OUTPUT IMPEDANCE

FIGURE 3 - POWER GAIN versus FREQUENCY

BROADBAND TEST FIXTURE

9.0

8.0

7.0

Fou,-100W
cc

6.0

135

I. FREQUENCY (MHz)

Zol*" Conjugtie ofthe optimum lotd impedence into which the device output operates
tt i given output power, votuge. indfrequency.

FIGURE 5 -

EFFICIENCY versus FREQUENCY

FIGURE 6 - INPUT VSWR versus FREQUENCY

BROADBANO TEST FIXTURE

BROADBAND TEST FIXTURE

Pou -100W
Vt C-28V
60

2
e

l 4

poul -100W
c C= 2BV

20
135

135

I. FREQUENCY (MHz)

f, FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-547

MRF317

TYPICAL PERFORMANCE CURVES

FIGURE 7 - OUTPUT POWER versus INPUT POWER
30 MHt

50 MHt 100 MH;

150 MH/
200 MHt

VCC ' 28 V

*
20

0.5

1.0

2.0

5.0

Pin.INPUT POWER (WATTS)

FIGURE 9 - POWER OUTPUT versus SUPPLY VOLTAGE

FIGURE 8 - POWER GAIN versus FREQUENCY

f = 100 MHz
120

pin - ic^y
*

' ' I0W

vcc = 28 V

p mil

8.0 W

100

6.0 W

100

120

140

160

180

200

FIGURE 10 - POWER OUTPUT versus SUPPLY VOLTAGE

FIGURE 11 - POWER OUTPUT versus SUPPLY VOLTAGE

f = ISO MHz

f - 200 MHz

VCc. SUPPLY VOLTAGE (VOLTS)

I. FREQUENCY (MHt)

100

10W

10W'

fin"

100
8.0 W

BOW
80

&
=

6.0 W

80
60

^
s*

of 40

<S'
>>

"y^

20
20

VCc.SUPPLY VOLTAGE (VOLTS)

Vce. SUPPLY VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-548

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF321

The RF Line
10 W - 400 MHz

RF POWER

TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON

. . . designed primarily for wideband large-signal driver and predriver

amplifier stages in the 200-500 MHz frequency range.

Guaranteed Performance at 400 MHz and 28 Vdc

Output Power = 10 Watts

Minimum Gain = 12 dB

Efficiency = 50%

100% Tested for Load Mismatch at All Phase Angles with

30:1 VSWR

Gold Metallization System for High Reliability

Computer-Controlled Wirebonding Gives Consistent

Input Impedance

MAXIMUM RATINGS

Rating

Symbol

Value

Collector-Emitter Voltage

VcEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

Vebo

4.0

Vdc

1.1

Adc

Collector Current - Continuous

Unit

1.5

Peak

Total Device Dissipation @T^ ' 25C (1)

Derate above 25C

Storage Temperature Range

Tstg

Watts

160

mW/C
C

-65to+150

only when the device is operated as an RF amplifier.

THERMAL CHARACTERISTICS

Thermal Resistance. Junction to Case

Symbol

Max

Unit

RflJC

6.4

C/W

WUMETKS
MAX

A
C

706
630
1499

1651

546

596

140

152

J
K
M

008

(1) This device is designed for RF operation. The total device dissipation rating applies

Characteristic

STYLE 1
PIN 1 EMITTER
2 BASE
3 EMITTER
4 COLLECTOR

1105
_

726
650

165
-

017
-

45 NOM
U7

MO HES
MAX
MM
0266
0278
0244
0256
0650
0593
0215
0235
0065
0055
0060
0007
0.003
-

0435
45'NOM
-

300

325

0118

0128

1(0

177

0055

0070

292

368

0115

0.145

CASE 244-04

MOTOROLA RF DEVICE DATA

2-549

0053

MRF321

ELECTRICAL CHARACTERISTICS (Tc - 2SC unless otherwise noted.)

Characteristic

| Symbol |

Min

V(BR)CE0

V(BR)CES

v(BR)CB0

V(BR)EB0

4.0

Typ |

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

dC 20 mAdc. IB=0)
Collector-Emitter Breakdown Voltage

(lC = 20 mAdc, VgE " 0)

Collector-Base Breakdown Voltage

(lc = 20 mAdc. le =0)

Emitter-Base Breakdown Voltage

dE - 2.0 mAdc. lc * 0)
Collector Cutoff Current

'CBO

(VCB = 30Vdc, lE-0)

Vdc

1.0

Vdc

mAdc

ON CHARACTERISTICS
DC Current Gain

hFE

(lC -500 mA. Vqe - 5 vdc>

DYNAMIC CHARACTERISTICS
Output Capacitance

C00

(VCb = 28 Vdc, lE - 0. f = 1.0 MHz)

FUNCTIONAL TESTS (FIGURE 1)
Common-Emitter Amplifier Power Gain

GPE

(VCc 28 Vdc. Pout - 10 W. f 400 MHz)

Collector Efficiency

(Vce " 28 Vdc. pout 10 W. f =400 MHz)

Load Mismatch

No Degradation in Output Power

(VCc = 28 Vdc. Pout = 10. f = 400 MHz.VSWR = 30:1

all phase angles)

FIGURE 1 - 400 MHz TEST CIRCUIT

-Lc10Tcii

C12T
12

tHZIOti"

;f6

C1.C2.C3- 1.0-20 pF Johanson Trimmer (JMC 5501)

C3, C4 47 pF ATC Chip Capacitor
C5. C10 - 0.1 pF Erie Redcap
C7 - 0.5-10 pF Johanson Trimmer (JMC 5201)
CS 0.018 jjF Vitramon Chip Capacitor
C9 - 200 pF UNELCO Capacitor
C11.C12 -SBOpF Feedthru
C13 - 1 pf. 50 Volt Tantalum Capacitor

5.1 n. 1/4 Watt

120 St. 1 Watt
20 n. 1/2 Watt
47 47. 1/2 Watt

11 .W. N Output

L1 0.33 pH Molded Choke with Ferroxcubo Bead

(Ferroxcube 56-590-6S/4B) on Ground End o( Coil
L2 - 4 Turns #20 Enamel. 1/8" ID
L3 - 6 Turns #20 Enamel, 1/4" ID
L4 -

Ferroxcube VK200 19/4B

21 Microstrip 0.1' Wx 1.35" L

Z2 - Microstrip 0.1' Wx0.55" L
Z3 Microstrip 0.1' W x 0.8" L

24- Microstrip 0.1" Wx 1.75" L

Ol -

-bcl3
-Li,
0.

1N4001

Board - Glass Teflon, eR - 2.56. t - 0.062"

Input/Output Connectors Typo N

MOTOROLA RF DEVICE DATA

2-550

MRF321

FIGURE 3 - OUTPUT POWER versus INPUT POWER

FIGURE 2 - OUTPUT POWER versus FREQUENCY

y\\

Pin.= LOW

200 MHt

500^-

'400

5 8.0

).7W-

2
6.0

).5W-

3
~

of 4.0

vcc 28 v

0.3 W

I I

0.2 W

>s0- iis
300

2.0

400

600

S00

Pi-. INPUT POWER (mW)

f. FREQUENCY (MHi)

FIGURE 5 -POWER GAIN versus FREQUENCY

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

-tow
VCC 28V

Pin*

0.5 W-

z '*

8.0

"^ ( .35
6.0

S tr

1
2

4.0

en
u, 5.0

< = 400 MHz

2.0

7,0

300

400

f. FREQUENCY (MHt)

Vcc.SUPPLY VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-551

MRF321

FIGURE 6 -

SERIES EQUIVALENT IMPEDANCE

Zqi' = Conjugate ofthsoptimum load impedance into which the device output operates atagiven output power, voltage and frequency.

MOTOROLA RF DEVICE DATA

2-552

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF323

The RF Line
20 W - 400 MHz

RF POWER
TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON

... designed primarily for wideband large-signal driver and predriver

amplifier stages in the 200-500 MHz frequency range.

Guaranteed Performance at 400 MHz and 28 V

Output Power = 20 Watts

Minimum Gain = 10 dB

Efficiency = 50%

100% Tested for Load Mismatch at all Phase Angles with

30:1 VSWR

Gold Metallization System for High Reliability

Computer-Controlled Wirebonding GivesConsistent Input

Impedance

MAXIMUM RATINGS
Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

72.

Adc

Rating

Collector Current Continuous

3.0

Peak

Total Device Dissipation @Tq " 25C (1)

Derate above 25C

Storage Temperature Range

Tstg

Watts

310

mW/C

-65to+150

STYLE I
PIN 1 EMITTER
2 BASE
3 EMITTER
4C0UECT0R

(1) This device is designed (or RF operation. The total device dissipation rating applies
only when ths device is operated as an RF amplifier.
DM
A

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

RfljC

3.2

C/W

MUUMETEDS
MAX
726
70S
620
6.50
1499
16.51
596
5*6
K

1.40

E
F
J

003

1105

P
S

162

1*5

0.17

45* NOM
1.27
3X0
3.25
_

140

1.77

2.92

368

WO KES

MAX

0273

0286

0244
0256
05
0650
0215
0.J3S
0055
0.065
COM
0.003
0007
0435
45* NOM

0118
0055
0115

CASE 244-04

MOTOROLA RF DEVICE DATA

2-553

0.050

0128
0070
0.145

MRF323

ELECTRICAL CHARACTERISTICS |TC - 25Cunless otherwise noted.)

Symbol

Min

V(BR)CEO

V(BR)CES

V(BR)CB0

V|BR)EB0

4.0

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS.

Collector-Emitter Breakdown Voltage

Vdc

(lC-20mAdc, lB-0)
Collector-Emitter Breakdown Voltage

He - 20 mAdc. VBE - 0)
Collector-Base Breakdown Voltage

Vdc

(lc = 20mAdc. Ie =0)

Emitter-Base Breakdown Voltage

Vdc

(IE - 2.0 mAdc. IC 0'

Collector Cutoff Current

'CBO

<VCB-30Vdc, lE = 0)

2.0

mAdc

ON CHARACTERISTICS
DC Current Gain

hFE

(lC - 1-0Adc, Vce =5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

(Vcb "28 v"c< ie o. f - i-o mhz)

FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain

Gpe

(VCc 28 Vdc, Pout = 20 W, f =400 MHz)

Collector Efficiency

(VCc 28 Vdc, Pout = 20 W, f - 400 MHz)

Load Mismatch

(Vce 28 V, Pout 20 W. f =400 MHz,

No Degradation in Output Power

VSWR = 30:1 all phase angles)

FIGURE 1 -400 MHz TEST CIRCUIT

C1, C2, C6 - 1.0-20 pF Johonson Trimmer (JMC 5501)

C3. C4 - 47 pF ATC Chip Capacitor
CS. C8 0.1 pF Erie Redcap
C7 0.5-10 pF Johanson Trimmer (JMC 5201)
C9. C10 - 680 pF Foodthru
C11 - 1.0 pF 50 Volt Tantolum
C12 0.018 liF Vitramon Chip Capacitor

L2
L3
L4
Z1
Z2
Z3
Z4

6 Turns #20 Enamol, J4" IO, Closewound

4 Turns #20 Enamel, 1/8" ID, Closewound
- Forroxcubo VK200 - 19/4B
- Microstrip 0.1" W x 1.35" L
- Microstrip 0.1" W x 0.55" L
- Microstrip 0.1" W x 0.8" L
- Microstrip 0.1" W x 1.75" L

Board - Glass Teflon Gr - 2.56 t - 0.062"

R1 -5.1 n 1/4 Watt

LI 0.33 MH Moldod Choko with Ferroxcubo Bead
(Ferroxcubo 56-590-65/4B) on Ground End

Input/Output Connectors Typo N

MOTOROLA RF DEVICE DATA

2-554

MRF323

FIGURE 3 - OUTPUT POWER versus INPUT POWER

FIGURE 2 - OUTPUT POWER versus FREQUENCY

500

400

200 MHz
-

v\ SN

"in" .0W -

VCC-28V

2.0 W

0.7 W

o. 5.0

/
V
0

400

/ /
/ /
/ /
/ / /
/ ,' /

LOW

-0.4W

300

2.5 W

1.5 W

b.U

S>
1-

/
/

i 0

VCC
2 .0

3 .0

= 28V

4.0

Pi. INPUTPOWER (WATTS)

I. FREOUENCY(MHz)

FIGURE 5 - POWER GAIN versus FREQUENCY

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

Pina

Po20W
vCc M V

1.8 W.

1. IW

tzh <

400 M Hz

300

400

I. FREQUENCY (MHz)

Vcc.SUPPLY VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-555

CO
CM

2
oc

MOTOROLA
.^^
SEMICONDUCTOR
TECHNICAL DATA

30 W - 225-400 MHz

CONTROLLED "Q"
BROADBAND RF POWER

NPN SILICON RF POWER TRANSISTOR

TRANSISTOR

.'.. designed primarily for wideband large-signal output and driver

NPN SILICON

amplifierstages in the 100-500 MHz frequency range.

Specified28 Volt, 400 MHz Characteristics Output Power = 30 Watts

Minimum Gain = 8.5 dB

Efficiency = 54% (Min)

Built-in Matching Networkfor BroadbandOperation

UsingInternal MatchingTechniques
100%Tested for-A-oad Mismatch at all Phase Angles with 30:1
VSWR

Gold Metallization for High Reliability Applications

MAXIMUM RATINGS
Symbol

Value

Unit

VcEO

Vdc

/ Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

3.4

Adc

Rating

Collector-Emitter Voltage

Collector Current - Continuous

4.5

-Peak

TotalDevice Dissipation @Jq - 25C (1)

Derate above 25C
Storage Temperature Range

Tstg

Watu

0.47

W/C

-65 to +150

STYLE I:
PIN1 EMITTER

2 COLLECTOR
3 EMITTER
4 BASE
N0T

FLANGE IS ISOLATED INAll STYLES

DM
A
B

C
0

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

RflJC

2.13

C/W

304

0085

0170

508

533

1879

010
1079

I8.M
015

0700
0.720
0004

only when the device is operated as an RFamplifier.

osto

0300
0770

(1)This device is designed for RFoperation. The total devicedissipationratingapplies

0490
0735
0710

0960

THERMAL CHARACTERISTICS

MCHES
MAX
0990

KUMETBtS
MAX
7514
1245
12?S
762
537
533
558
MIN

2433

0
R
U

2.16

1117

0405

3.81
381

406

0150

0210
0730
0006
04(0
0160

431

0150

0170

297

333

0115

0133

305
1194

330

0120
0470

0130

1257

CASE 316-01

MOTOROLA RF DEVICE DATA

2-557

0495

MRF325
ELECTRICAL CHARACTERISTICS <TC =25C unless otherwise noted.)
Characteristic

Symbol

Typ

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC " 30 mAdc, lB - 0)
Collector-Emitter Breakdown Voltage
(lC 30 mAdc, VBE 0)

V|BR)CEO
V(BR)CES

Emitter-BaseBreakdown Voltage

V(BR)EBO

4.0

V(BR)CBO

(IE -3.0 mAdc, lc 0)

Collector-BaseBreakdown Voltage
(lC " 30 mAdc, l =0)
Collector Cutoff Current'

Vdc

'CBO

IVCB" 30 Vdc, lE 0)

Vdc

3.0

mAdc

ON CHARACTERISTICS
DC Current Gain

hFE

(lC * 1.5 Adc. Vcg = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

cob

IVCB =28 Vdc, Ig =0. f 1.0 MHz)

FUNCTIONAL TESTS (Figure 1)

Common-Emitter Amplifier Power Gain

GpE

8.5

9.5

Collector Efficiency

(Vce " 28 Vdc. Pou, - 30 W, f - 400 MHz)

IVCc 28 Vdc, Pout =30 W, f - 400 MHz)

Load Mismatch

*" -

(VCC - 28 Vdc. Pout - 30 W,

No Degradation in Output Power

f - 400 MHz. VSWR * 30:1 all angles)

FIGURE 1 - 400 MHz TEST CIRCUIT

, cx: j jc.,1 ,jj- j

L2
DUT

-<,

TrCID-^ClO-r

^C4?k C5P>

-,(

jZ C9 7?
1

-L

CI. C9 - 1.0-10pF Johanson Capacitor (JMC S201)

C2, C3. C6, C7 - 1.0-20 pF Johanson Capacitor (JMC 5S01)
C4. C5 - 36 pF ATC 100-mil Chip Capacitor
CB- 100 pF UNELCO
CIO. C13 - 1.0 uF SO V Tantalum
C11. C14 - 680 pF Feedthru
C12 0.1 pF Erie Redcap

L3
21
Z2
Z3

LI - 8 Turns #26 AWG Enameled. 1/16" ID Closewound

Board - Glass Tof Ion r - 2.66, t - 0.062"

L2 - 14 Turns, #22 AWG Enameled, Closowound on a 470 n,

2 Wan Resistor with Ferroxcube Bead (#56-590-6S/4B)
on Cold End of L2

with Ferroxcube Bead (#66-690-66/48) on Ground End

- Ferroxcube VK2O0-19/4B Ferrite Choko

- Microstrip 0.19" W x 0.88" L
- Microstrip 0.28" W x 1.0" L
- Microstrip 0.31" W x 1.25" L

Input/Output Connoctors Typo N

OUT Socket Lead Frame Etched from 80-mtl-Thick Copper

MOTOROLA RF DEVICE DATA

2-558

MRF325

FIGURE 2 - OUTPUT POWER versus INPUT POWER

/ 225 MHi

400 MHt

Vce 28 Vdc

1.0

2.0

3.0

4.0

P,. INPUT POWER (WATTS)

FIGURE 3 - OUTPUT POWER versus

FIGURE 4 - OUTPUT POWER versus

SUPPLY VOLTAGE - 225 MHz

SUPPLY VOLTAGE - 400 MHz

Pin
_

1.7W-

LOW-

I 30

4.0 W

3.0 W-

2.0 W
0.6 W.

J ,0

1 = 400 MHt

1*22 MHz

Vcc.SUPPLY VOLTAGE (VOLTS)

V,.,.. SUPPLY VOLTAGE(VOLTS)

MOTOROLA RF DEVICE DATA

2-559

MRF325

FIGURE S - SERIES EQUIVALENT IMPEDANCE

MOTOROLA RF DEVICE DATA

2-560

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF326

The RF Line

40 W - 225-400 MHz

CONTROLLED "Q"
BROADBAND RF POWER
TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

... designed primarily for wideband large-signal output amplifier

NPN SILICON

stages in the 100-500 MHz frequency range.

Guaranteed Performance @ 400 MHz, 28 Vdc

Output Power = 40 Watts

Minimum Gain = 9.0 dB

Built-in Matching Network for Broadband Operation

100% Tested for Load Mismatch at all Phase Angles

with 30:1 VSWR

Gold Metallization System for High Reliability Applications

,-r-i

MAXIMUM RATINGS
Symbol

Value

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

4.5

Adc

110

Watts

0.63

W/C

Tstg

-65 to +160

Symbol

Max

Unit

Rating

Collector Current Continuous

Derate above 25C

Storage Temperature Range

ElLrE=i.
T

STYLE 1
PIN V EMITTER

2 COLLECTOR
3 EMITTER
4 BASE
NOTE

FLANGE IS ISOLATED IN All STVIES

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

6.0

Peak

Total Device Dissipation @Tq " 2SC (1)

Unit

RflJC

1.6

C/W

WUIKETERS
MAX
25.14
24 38
1245
12.95
KIN

INCHES

0990

0490

0510
0300

597

762

0235

513

SSB
304

0210
0095

0120

509
1879
010

533
1854

0200

0210

0730

015

0720
00)4

1023

11.17

0405

0440

381

406

381

431

0150
0150

0170

292
30S
1194

330
330

0115
0120

0130

1257

0470

0495

(DThis device is designed (or RF operation. The total device dissipation rating applies
only when the device is operated as an RF amplifier.

2t6

R
U

CASE 316-01

MOTOROLA RF DEVICE DATA

2-561

MAX

0.960

0220

0006

0160

0130

MRF326

ELECTRICAL CHARACTERISTICS (Tc- 25C unless otherwise noted)

Characteristics
| SymboT

Typ

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC 40 mAdc, lB - 0)
Collector-Emitter Breakdown Voltage
(lC " 40 mAdc, VgE * 0)
Emitter-Base Breakdown Voltage

(lE -4.0 mAdc. lc-0)

Collector-Base Breakdown Voltage

(lC-40mAdc, Ig-O)
Collector Cutoff Current

V(BH)CEO

V(BR|CES

V|BR)EBO

4.0

V(BR)CBO

>CBO

(Vcb " 30 Vdc. IE =0)

Vdc

4.0

mAdc

ON CHARACTERISTICS
OC Current Gain

"FE

dc 2jo Adc. vCE s-o vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

(VCb = 28 Vdc. IE' 0,f-1.0MHz)

FUNCTIONAL TESTS (Figure 1)

Common-Emitter Amplifier Power Gein

GpE

9.0

(VCc" 28 Vdc, Pout- 40 W, f - 400 MHz, lc Max - 2.85Adc)

Collector Efficiency

<VCc - 28Vdc,Pout - 40 W, f - 400 MHz, lc Max - 2.85Adc)

Load Mismatch

No Degradation
in Power Output

(VCc - 28 Vdc. Pout - 40 W CW.f - 400 MHz,

VSWR = 30:1 all phase angles)

FIGURE 1 - 400 MHz TEST AMPLIFIER

Input'

H Z1 ryI Z2

<nCI

5sC2

C37* ?7. 7Z.

C1 - 1.0-10 pF Johanson, Capacitor (JMC 6201)

C2, C3, C6, C8 1.0-20 pF Johanson Cepaeitor
C4, CS - 36 pF ATC "B" Style Chip Capacitor
C7. C9, C13 - 100 pF UNELCO Capacitor
C11 -680pF Feedthru
C10 - 1.0 MF GO V Tantalum
C12 - 0.1 pF Erie Redcap
LI - 8 Turns #28 AWG Enameled. 1/16" IO Closewound

R2, R3 - 10 Ohm 1.0 W Carbon

Z1 - Microstrip 0.19" W x 1.28" L

L2, LS -

Board Glass Teflon r - 2.S6 t - 0.062"

L3 - 8 Turns #20 AWG Enameled, 1/4" ID Closewound

L4 -

4 Turns #26 AWG 0.1" ID

R1 -

10 Ohm 2.0 W Cerbon

Z2 - Microstrip 0.28" W x 1.0" L

Z3 - Microstrip 0.31" W X 1.0" L
Z4 - Microstrip 0.31" W x 0.9" L

Ferroxcube VK200-19/4B Ferrite Choke

Input/Output Connectors Type N UGS8 A/U

MOTOROLA RF DEVICE DATA

2-562

MRF326

FIGURE 3 - OUTPUT POWER versus SUPPLY VOLTAGE

f - 225 MHz

FIGURE 2 - OUTPUT POWER versus INPUT POWER

3.8 W
225 M

\z/ X^4 10 MHi

2.6 W-

1.8W-

| 20

20
Vt C-28

a? 10

1.0

2.0

3.0

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

f = 400 MHz
SO

<y
Pin" 4.3 W.
2.8 W

Vcc.SUPPLYVOLTAGE (VOLTS)

Pin.INPUT POWER (WATTS)

2.0 W

VCC. SUPPLY VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-563

p *to

o
2

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF327

The RF Line
80 W-100-500 MHz

CONTROLLED "Q"
BROADBAND RF POWER

NPN SILICON RF POWER TRANSISTOR

TRANSISTOR
NPN SILICON

... designed primarily for wideband large-signal output amplifier

stages in the 100-500 MHz frequency range.

Guaranteed Performance @ 400 MHz, 28 Vdc

Output Power = 80 Warn over 225-400 MHz Band

Built-in

Minimum Gain - 7.3 dB @ 400 MHz

Matching Network for

Broadband Operation Using

Double Match Technique

100% Tested for Load Mismatch at all Phase Angles

Gold Metallization System for

Characterized for 100-500 MHz

with 30:1 VSWR

High Reliability Applications

tIT

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

Vcbo

Vdc

Emitter-Base Voltage

Vebo

4.0

Vdc

9.0

Adc

Collector Current Continuous

Total Device Dissipation ft? Tc " 2SC (1)

PIN1 EMITTER

250
1.43

W/C

Tstg

-65to+150

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Symbol

RflJC

Max

0.7

(1) This device is designed for RF operation. The tota 1device dissip ation rating ap
only when the device is operated as an RF amplif er.

2 COLLECTOR
3 EMITTER

Watts

Derate above 2SC

Storage Temperature Range

STYLE 1:

12.0

-Peak

Unit

C/W
jlies

NOTE

'BASE

FLANGE IS ISOLATED INALLSTYLES

MUMETEflS
MAX

INCHES

MAX

2433

2514

09GO

0990

1245

1295

0490

0510

597

762

533
216

0235
0210

0.300
0220

304

00S5
0203

0120

558

E
F

503

1873

533
1854

010
1029

015
1117

381

406

381

431

L
N
0

292

305
1194

333
330

1257

0730

0405
0150
0150
0115
0.1J0
0470

0440

CASE 316-01

MOTOROLA RF DEVICE DATA

2-565

0210

0720
0034

0006
0.160
0170
0133

0133
0495

MRF327
ELECTRICAL CHARACTERISTICS <TC - 25C unless otherwise noted.)
Characteristic

Symbol

Typ

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lc-80mAdc.lB-0)

v|BR)CE0

Collector-Emitter Breakdown Voltage

V(BR)CES

IIC=80 mAdc. Vbe" 0)

Emitter-Base Breakdown Voltage

(IE"8.0mAdc, lc =0)
Collector-Base Breakdown Voltage

Vdc

V(BR)EB0

4.0

V(BRICBO

Vdc

(lC - 80 mAdc, lc 0)
Collector Cutoff Current

CBO

(VCB=30Vdc, lE-0)

5.0

mAdc

ON CHARACTERISTICS
DC Current Gain

hFE

(lC 4.0 Adc, vCe so vo

DYNAMIC CHARACTERISTICS

Output Capacitance

cob

(VCb - 28 Vdc, Ig =0, f = 1.0 MHz)

100

145

FUNCTIONAL TESTS (Figure 1)

Common-Emitter Amplifier Power Gain

GPE

7.3

9.0

(VCc " 28 Vdc. Pout " 80 W, f 400 MHz)

Collector Efficiency

(VCc 28 Vdc, Pout - 80 W, f = 400 MHz)

Load Mismatch

(Vce " 28 V. Pout =80 W, f =400 MHz.VSWR 30:1

No Degradation in Output Power

all phase angles)

FIGURE 1-400 MHz TEST CIRCUIT

CI, C2, C7, CS, C9 - 1.0-20 pF Piston Trimmer (Johanson JMC 6601)
C3, C4 - 36 pF ATC 100 mil Chip Capacitor
CS. C6 - 43 pF ATC 100-mil Chip Capecltor
C10- 100 pF UNELCO
C11. CI 6 - 0.1 uF Erie Redcap
C12, C13 - 680 pF Feedthru
CI 4 -

L4 - 6 Tums #20 AWG Enameled, 3/16" ID Closewound

L6 4 Turns #22 AWG Enameled, 1/8" ID Closewound
Z1 Z2 Z3 -

Microstrip 0.2" W x 1.5" L

Microstrip 0.17" W x 1.16" L
Microstrip 0.17" W x 0.63" L

R1, R2 - ion 2 Watt

Board - Glass Teflon Sr - 2.56. t - 0.062"

1.0 F 60 V Tantalum

LI 4 Turns #22 AWG Enameled, 3/16" ID Closewound with Ferroxcubo

Input/Output Connectors Type N

Bead (#66-690-66/4B) on Ground End of Coil

L2 - Ferroxcube VK200-19/4B Ferrite Choke

OUT Socket Lead Frame Etched from 80-mil-Tttick Copper

L3 - 7 Turns #18 AWG. 11/16" Long, Wound on a 100 kn 2 Watt Resistor

MOTOROLA RF DEVICE DATA

2-566

MRF327
FIGURE 3 - OUTPUT POWER versus FREQUENCY

FIGURE 2 - POWER GAIN versus FREQUENCY

120

P ml-80W
V CC-28V

1
-I5W

t
S

,10 W

^7.5 W.

VCC-28V

5.0 W

3 *

7.0

5.0

200

300

200

400

300

400

f, FREQUENCY (MHt)

I, FREQUENCY (MHi)

FIGURE 5 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

f = 400 MHz

f - 225 MHz

to*""

^in 15W

r9.0W

-10W.

6.0 W
6.0 W

Vcc.SUff>LY VOLTAGE (VOLTS)

FIGURE 6 - OUTPUT POWER versus INPUT POWER

120

^ToOMHz

"^m

^400

100

Vcc.SUPPLY VOLTAGE (VOLTS)

3
o

| 60
73

a. 40

vcc

5.0

P,. INPUT POWER (WATTS)

MOTOROLA RF DEVICE DATA

2-567

28 V

CM
CO

<
o

u. to
S

>
UJ

CC A,

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF329

The RF Line
100 W - 100-500 MHz

CONTROLLED "Q"

NPN SILICON RF POWER TRANSISTOR

BROADBAND RF POWER
TRANSISTOR

... designed primarily for wideband large-signal output and driver

amplifier stages in the 100-500 MHz frequency range.

NPN SILICON

Specified 28 Volt, 400 MHz Characteristics Output Power = 100 Watts

Minimum Gain = 7.0 dB

Efficiency = 50% (Min)

Built-in Matching Network for Broadband Operation

Using Double Match Technique

100% Tested for Load Mismatch at All Phase Angles

Gold Metallization System for High Reliability

Replacement for MR F328

With 3:1 VSWR

-L*3-

rvrr/.

rTji

MAXIMUM RATINGS
Symbol

Value

Unit

Vdc

Collector-Base Voltage

VCEO
VCBo

Vdc

STYLE I
PIN 1. EMITTER
2. COLLECTOR
3 EMITTER

Emitter-Base Voltage

VEBO

4.0

Vdc

i BASE

9.0

Adc

Rating

Collector-Emitter Voltage

Collector Current Continuous

12.0

-Peak

TotalDevice Dissipation @Tc 25C (1)

Derate above 25C

Storage Temperature Range

Tstg

270

Watts

1.54

W/C

-65 to +150

' I I Lill
NOTES:
1 DIMENSIONING ANDTOLERANCING PER ANSI
YI4.5M,1982.
2. CONTROLLING DIMENSION: INCH

MILLIMETERS
DM
A
B

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case (2)

Symbol

Max

Unit

RfljC

0.65

C/W

C
0
E
F

KIN
24.51

9.91
6.73
483
2.42
5.47

INCHES
MAX

MIN

MAX
25.02
10.41

0965

7.24

0265

5.33

0190

osss
0.410
0295
0210

0.095

0115

2.92
5.96

1842 BSC

0390

0.215
0235
0.725 BSC

3.94

4.44

(1) This device is designed for RF operation. The total device dissipation rating applies

0.155
0.004

010
4.95

0.15

only when the device is operated as an RF amplifier.

(2) Thermal Resistance is determined under specified RF operating conditions by infrared
measurement techniques.

521

0195

19.55

0740

0770

10.60
10.16
3.42

0415
0.390
0.120

0425
0400

N
P
0

16.80
10.54
9.91

3.05

CASE 333-03

MOTOROLA RF DEVICE DATA

2-569

0175

0006
0205

0135

MRF329

ELECTRICAL CHARACTERISTICS (Tc - 25Cunless otherwise noted.)

Characteristic

Symbol

Min

v(BR)CEO

V(BR)CES

v(BR)EBO

4.0

v(BR)CBO

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

<lc = 80 mAdc. IB = 01
Collector-Emitter Breakdown Voltage

(lC " 80 mAdc. Vbe = 01

Emitter-Base Breakdown Voltage

(IE = 8.0 mAdc. Ic 0)

Collector-Base Breakdown Voltage

Vdc

(IC = 80mAdc,lE"0)
Collector Cutoff Current

<CBO

5.0

mAdc

IVcB = 30Vdc, Ie=0I

ON CHARACTERISTICS
DC Current Gain

"FE

(lC =4.0 Adc. VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

125

IVCB = 28 Vdc. l " 0. f - 1.0 MHz)

FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain

GpE

7.0

9.7

(VCC ' 28 Vdc. Pout = 100 W. f - 400 MHz)

Collector Efficiency

IVCC- 28 Vdc, Pout = 100 W. f - 400 MHz)

Load Mismatch

No Degradation in Output Power

(Vce ' 28 Vdc- pout * 10 w.

f = 400 MHz VSWR 3:1 all angles)

FIGURE 1 - 400 MHz TEST CIRCUIT

-^RF Output

V
7-c,

CI. C2. C7, C9 - 1.0-20 pF Johanson (JMC 5501)

C3, C4 - 36 pF 100 mil Chip Cap (ATC)
C6. C6 - 60 pF 100 mil Chip Cap (ATC)
C8 - 30 pF 100 mil Chip Cap (ATC)
C10 - 2-150 pF 100 mil Chip Caps In Parallel (ATC)
C11 - 1.0-10 pF Johanson (JMC 5201)

LI - 0.15 uH Molded Choke with Ferrite Bead

(Ferroxcube #56-590-65/4B) on Ground End

L2 - 4 Turns #18 AWG. 1/4" ID
L3 - Ferroxcube VK200-19/4B

21 - Microstrip Line 2300 mils L X 210 mils W

Z2 - Microstrip Line 2300 mils L X 280 mils W

C12. C13 - 1000 pF UNELCO Feedthru

C14 - 0.1 uF Erie Redcap

Board - Glass Teflon, t - 0.062", tr 2.56

MOTOROLA RF DEVICE DATA

2-570

MRF329

FIGURE 2 - OUTPUT POWER versus

INPUT POWER

FIGURE 3 -

OUTPUT POWER versus FREQUENCY

1
in - u w

If OMH

= 9.0W

. 225 MHi

2. SO

"*40 )MH:

= 4.0 W

1 40
- Vrr = 28 Vdc-

_ Vn = 2B Vdc-

20
0

2.0

4.0

6.0

8.0

100

ISO

Pin.INPUT POWER (WATTS)

200

250

FIGURE 4 - OUTPUT POWER versus

SUPPLY VOLTAGE

FIGURE 6 - OUTPUT POWER versus

SUPPLY VOLTAGE

(226 MHz)

(400 MHz)

100

Pin = 'IW^.

Pj = HW^

g 80

= 8.5
= 8.5

t>'

350

300

I. FREQUENCY. (MHt)

*=1.5'w

= 6.5W

y ^

W^.

Vce. SUPPLY VOLTAGE (VOLTS)

Vce.SUPPLY VOLTAGE (VOLTS)

FIGURE 6 POWER GAIN versus FREQUENCY

. ^out3 100 W
vcc = 28 V

-11.5
a

3
C9

10.5
5
o
Q.

9.5

100

200

300

f. FREQUENCY (MHi)

MOTOROLA RF DEVICE DATA

2-571

400

MRF329

FIGURE 7 -

SERIES EQUIVALENT INPUT/

OUTPUT IMPEDANCE

Zql' =Conjugate ofiheoptimum load impedance intowhichthedevicel

operates at a given output power, voltage, and frequency

FIGURE 8 -

TEST FIXTURE

MOTOROLA RF DEVICE DATA

2-572

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF338

The RF Line
80 W 400-512 MHz

CONTROLLED "Q"
BROADBAND RF POWER
NPN SILICON RF POWER TRANSISTOR

TRANSISTOR
NPN SILICON

... designed primarily for wideband large-signal output and driver

amplifier stages in the 400-512 MHz frequency range.
Specified 28 Volt, 470 MHz Characteristics
Output Power = 80 Watts
Minimum Gain = 7.3 dB

Efficiency = 50% (Min)

Built-in Matching Network for Broadband Operation

100% Tested for Load Mismatch at All Phase Angles With

30:1 VSWR

Gold Metallization System for High Reliability Applications

Uoiho1)'|t|ih|

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

9.0

Adc

Collector Current Continuous

Derate above 25C

Storage Temperature Range

STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. EMITTER
4. BASE

12.0

Peak

Total Device Dissipation @ Trj = 25C (1)

Tstg

250

Watts

1.43

W/C

-65 to +150

tzz3~\

t LJi

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M.1982.
2. CONTROLLING DIMENSION: INCH

DM
A

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case (2)

Symbol

Max

Unit

"flJC

0.7

C/W

(1) This device is designed for RF operation. The total device dissipation rating applies
only when the device is operated as an RF amplifier.

(2) Thermal Resistance is determined under specified RF operating conditions by infrared

measurement techniques.

C
D
E
F

G
H

MIUiN ETERS
MM
MAX
24.51
931
6.73
483
2.42

2502
10.41

724
533
2.92

5.96
5.47
18.42 BSC
3.94
4.44

010

X
L

18.80

10.54

P
Q

9.91

4.95

3.05

0.15
521
1955
10.80
10.16
3.42

moHES

KM
MAX
0.985
0965
0390
0.410
0.265
0.285
0.210
0.190
0095
0115
0.215
0.235
0725 BSC
0.155
0.175
0004
0.006
0.195
0.205
0740

0415

0.390
0.170

CASE 333-03

MOTOROLA RF DEVICE DATA

2-573

i is I

0770
0425
0400

0135

MRF338

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted)

Characteristic

| Symbol | Min"

Typ

| Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

v(BR)CEO

V(BR)CES

Vdc

v(BR)EBO

4.0

Vdc

v(BR)CBO

Vdc

(lC = 80 mAdc. Ib = 0)
Collector-Emitter Breakdown Voltage

dC = 80 mAdc. VBE= 0)
Emitter-Base Breakdown Voltage

dE = 8.0 mAdc. lc - 0)
Collector-Base Breakdown Voltage

(lC = 80 mAdc, Ie = 0)
Collector Cutoff Current

ICBO

5.0

mAdc

(VCB= 30 Vdc. Ie = 0)
ON CHARACTERISTICS
DC Current Gain

hFE

(lc = 4.0 Adc. VCe = 6.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

125

(VCB= 28 Vdc. l = 0. f = 1.0 MHz)

FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain
(VCc = 28 Vdc. Pout = 80 W. f = 470 MHz)

Gpe

7.3

8.8

Collector Efficiency

(VCc = 28 Vdc, Pout = 80 W. f = 470 MHz)

Load Mismatch

(Vce = 28 Vdc, Pou, = 80 W.

No Degradation in Output Power

f = 470 MHz. VSWR = 30:1 all angles)

FIGURE 1 -

470 MHz TEST CIRCUIT

RFC1

vCc
^

C12

ft-H-l IT -1
e"T I -t

28 V
C15

CIO

Input

CI. C2. C8. C9 - 0.8-20 pF Johanson (JMC 5501)

C3. C4. C6. C7 25 pF Underwood 100 V
C5. C10 100 pF Underwood 100 V
C11. CI 3 0.1 pp Erie Redcap
C12, C14 680 pF Feedthru
CIS 1.0 fiF Tantalum
LI 0.16 iH Molded Choke

RFC1 Ferroxcube VK200 19/4B

Besd Ferroxcube 056-59O-65/3B
R1. R2 10 n 2.0 Watt Carbon

Z1
Z2
Z3
Z4

Microstrip Line 0.190* W

Microstrip Una 0.190* W
Microstrip Line 0.190* W
Microstrip Line 0.190* W

x 2.5* L
* 0.289* L
0.55* L
x 0.325* L

Board Glass Teflon. <r = 2.56, t = 0.062*

L2 5 Turns tt20 AWG. 0.186' ID. Close Wound

L3 3 Turns 018 AWG, 0.185* ID. Close Wound
L4 4 Turns #18 AWG. 0.188" 10. Close Wound

MOTOROLA RF DEVICE DATA

2-574

MRF338

FIGURE 2 POWER OUTPUT versus POWER INPUT

FIGURE 3 -

1 = 47 J MHz

OUTPUT POWER versus SUPPLY VOLTAGE

Pin =

1 = 470 MHz

w 80

1 = 51 2 MHz

1 = 400 MHz

Pin =

14 W

12W

"^Bl

vcc = 28

= I0W

|40

J 20

-20

8.0

Pin.INPUT POWER (WATTS)

FIGURE 4 -

VCc. SUPPLY VOLTAGE (VOLTS)

POWER GAIN versus FREQUENCY

FIGURE 5 OUTPUT POWER versus FREQUENCY

Pin=

vcc = 28 V
pout= BOW

1SW

9.0

co 80

g 8.0

|60

12W

i
19

8.0 W

vcc = 28

|40
73
a

o?20
5.0
450

475

500

525

0
400

I. FREQUENCY (MHz)

450

475

I. FREQUENCY |MHz)

MOTOROLA RF DEVICE DATA

2-575

500

MRF338

FIGURE 6 -

SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCE

FIGURE 7 -

TEST FIXTURE

MOTOROLA RF DEVICE DATA

2-576

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF340

The RF Line
8W

100-150 MHz

RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
NPN SILICON

... designed primarily for use in VHF amplifiers with amplitude

modulation and other communications equipment operating to
150 MHz.

Low Cost Common Emitter TO-220 Package

Specified 27 V, 136 MHz Performance:

Output Power = 8.0 W
Power Gain - 13 dB Min

Efficiency = 50% Min

20:1 VSWR Load Mismatch Capability at Rated Output

Power and Supply Voltage

Other Devices in the Series:

MRF342

24 W

MRF344

60 W

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

vCEO
VcBO

Vdc

Collector-Base Voltage

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

1.0

Adc

Collector-Emitter Voltage

Collector-Current Continuous
Peak

Total DeviceDissipation- Tq = 25C (1)

1.2

Derate above 25C

Storage Temperature Range

r&Z tf

Tstg

Watts

mW/C

-65 to+150

STYLE?

PIN I BASE
2 EMITTER

3C0UECT0H
4 EMITTER

NOTES:

I DIMENSIONING AND T0LERANCING PERANSI

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Y145M.I932

Symbol

Max

Unit

R0JC

11.6

C/W

1 CONTROLLING DIMENSION INCH

3 DM Z DEFINES A ZONEWHERE All BOOYAND

LEADIRREGULARITIES AREAU0WE0
MUMETEftS

(1)This device is designed for RFoperation. The total device dissipation rating applies
only when the device is operated as an RF amplifier.

DM
A

B
c
D
F

G
H

1
K

I
N

KN
1446

INCHES
MAX

MAX

1575

0670

0620

965
407

1028

0395

0405

46?

0160

0190

064

069
373

0026
0142

0035
0147

266
393
OK

0096

0105
0155

361
242
2W
036
12 70
115

1427

0110

0014
0600
0046

0022
0562
0066

0190
0100

0120

0060

0110
0055
0255
0060

244

133
633
304

204

?79

tis

133
647

0045

127

0000

S
T
U
V

_13L
000
115

0235
0046

204

CASE 221A-04
TO-220AB

MOTOROLA RF DEVICE DATA

2-577

0210

00N

MRF340
ELECTRICAL CHARACTERISTICS (Tc - 25Cunless otherwise noted)
Characteristic

Unit

Symbol

Min

V(BR)CEO

Vdc

V(BR)CES

Vdc

V(BR)CB0

Vdc

V(BR)EBO

4.0

Typ

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC" 20 mAdc, lB0)

Collector-Emitter Breakdown Voltage

(lc =20mAdc.VBE-0)
Collector-Base Breakdown Voltage

(lC 20 mAdc, lE - 0)
Emitter-Base Breakdown Voltage

Vdc

(IE - 2.0 mAdc, lc - 0)

Collector Cutoff Current

'CES

1.0

mAdc

<VCE" 27 Vdc, VBE " 0)

ON CHARACTERISTICS

hFE

DC Current Gain

100

<IC 100 mAdc. VCo - 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

8.0

(VCB 27 Vdc, lE - 0, f = 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

GpE

9.0

40.5

GpE

13.0

14.9

(VCc = 135 Vdc, Pou, - 2.0 W, f = 136 MHz)

Common Emitter Amplifier Power Gain

(VCc " 27 Vdc, P0ut * 8.0 W, f - 136 MHz)

Collector Efficiency

(Vce = 27 Vdc, Pout " 8.0 W, f - 136 MHz)

Loed Mismatch

No Degradation in Power Output

(Vce ' 27 Vdc, Pout " 8.0 W (peak), f - 136 MHz.

Drive modulated with 1.0 kHz square wave. 50%

duty cycle. Load VSWR > 20:1, all phase angles)

FIGURE 1 - 136 MHz TEST CIRCUIT

-K>RF
,x
r Output
InputS ^"
5t> C2

C1 -

?K C3

Arco 404 8-60 pF

C2, C5 - 40 pF UNELCO
C3 -80pF UNELCO
C4, C11 - 0.1 pF Erie Rodcap
C6 - 25pF UNELCO
C7 - 5.0 pF UNELCO
C8 - Arco 403 3-35 pF
C9 510 pF Dipped Mica

L1 - 3 Turns #18 AWG, 1/8" ID

L2. L3 - 4 Turns #18 AWG, 1/8" ID
L4 -

0.33 uH Molded Choke

L6 - 0.15 pH Molded Choke with Ferrite Bond

L6 - 0.47 fiH Molded Choke with Ferrite Bead
L7 -

VK-200-19/4B

R1 - 100 A, 1.0 Watt

C10 680 pF Feedthru

MOTOROLA RF DEVICE DATA

2-578

ia1

f al

3 ~

-:5 5N
8

C3 A

'.p.

at B

tn 2

s
I

~" 3

in a

Poul.OUTPUT POWER (WATTS)

A -^. V ^\ \

V \

o<5

"NV^

-o

Pout.OUTPUT POWEH (WATTS)

8
-<

y .

a
":

L? o

, o-0
T" s

1 <: s

J o

1ci

_| <^

1
1

K^V f

Pool.OUTPUT POWER (WATTS)

- s

33 3

GPE. POWER GAIN (dB)

MRF340

FIGURE 7 -

136 MHz TEST AMPLIFIER

FIGURE 8 - PRINTED CIRCUIT BOARD LAYOUT -

136 MHz TEST CIRCUIT

NOTE: The Printed Circuit Board shown is 75% of the original.

MOTOROLA RF DEVICE DATA

2-580

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF342

The RF Line
24 W

100-150 MHz

RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
NPN SILICON

...designed primarily for use in VHF amplifiers with amplitude

modulation and other communications equipment operating to
150 MHz.

Low Cost Common Emitter TO-220 Package

Specified 27 V. 136 MHz Performance:

Output Power = 24 W
Power Gain = 11 dB Min

Efficiency = 50% Min

20:1 VSWR Load Mismatch Capability at Rated

Other Devices in the Series:

Output Power and Supply Voltage

MRF340
MRF344

sumo .

rww

8.0 W

1 -T- |

H c

60 W

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

vEBO

4.0

Vdc

2.2

Adc

Collector Current - Continuous

Peak

Total Device Dissipation - Tc = 25C (1)

2 EMITTER
NOTES:

Watts

310

mW/C

Tstg

-65 to +150

Symbol

Max

Unit

Derate above 25C

Storage Temperature Range

STYLE 2:
PIN 1 BASE

3.0

THERMAL CHARACTERISTICS

Y14.5M. 1387.

2. CONTROLLING DIMENSION: INCH

3. DIM2 DEFINES A ZONEWHEREALLBODY AND
LEAD IRREGULARITIES AREALLOWED
MILUMETERS

Characteristic

Thermal Resistance. Junction to Case

RflJC

C/W

3.2

1. These devices are designed lor RF operation. The total device dissipation rating applies
only when the devices are operated as RF amplifiers.

INCHES

DIM

MIN 1 MAX

MIN

1448 I IS75

0 570

0.620

::-:

0405

966

407

10 25

0160

0.190

0.64

0.88

0.025

361

373

0142

0.035
0.147

265

0095

0.105

242

482

280

393

0.110

0.36

0 55

0014

0.155
0.022

12.70

1427

0.500

0.562

116

139

0.045

0.055

483

533

0190

0210

254

3.04

0.100

0.120

R
S

2.04

2.79

0.080

0.110

1.15

1.39

0 0.15

0235

0.055
0.255

597

6 47

0.00

127

1.15

2.04

0.000

0045
-

CASE 221A-04
TO-220AB

2-581

MAX

C
D
C

MOTOROLA RF DEVICE DATA

3 COLLECTOR
4. EMITTER

1. DIMENSIONING ANDT0LERANCING PERANSI

0050
_

0.080

MRF342

ELECTRICAL CHARACTERISTICS (Tc - 25C unless otherwise noted)

Characteristic

Symbol

| Min |

Typ ~f

V(BR)CEO

Vdc

V(BR)CES

Vdc

V(BR)CBO

V(BR)EBO

4.0

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC-20mAdc. lB-0)
Collector-Emitter Breakdown Voltage

(lC - 20 mAdc, VBE - 0)

Collector-Base Breakdown Voltage

Vdc

(lc - 20 mAdc, lE - 0)
Emitter-Base Breakdown Voltage

(lE = 2.0 mAdc, lc-0)

Collector Cutoff Current

'CES

2J0

(VcE27Vdc,VBE-0)

Vdc

mAdc

ON CHARACTERISTICS
OC Current Gain

hFE

100

(lc = 1.0 Adc, VCE - 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

<VCB - 27 Vdc. IE:

C0b

0,f = 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

GPE

11.5

GPE

12.3

<Vcc " 135 Vdc, P0ut " 6.0 W. f - 136 MHz)

Common-Emitter Amplifier Power Gain

(Vce " 27 Vdc, Pout - 24 W, f - 136 MHz)

Collector Efficiency

VCC- 27 Vdc, Pout - 24 W, f - 136 MHz)

Load Mismatch

No Degradation in Power Output

(VCc " 27 Vdc, Pout " 24 W (peak), f - 136 MHz

Drive modulated with 1.0 kHz square wave,

50% duty cycle. Load VSWR > 20:1, all phase angles)

I-TWO

Q +

C10

C1 -

LI. L2 - 3 Turns #18 AWG. 1/8"

Arco 404

L3 -

C2- 28 pF UNELCO

5 Turns #18 AWG, 1/8 ID

L4, L7 - VK-200-19/4B

C3, C7 - 200 pF UNELCO

L5 -

C4-40 pF UNELCO
CS -

0.15UH Molded Choko

L6 - 0.22 mH Molded Choke

L8 - 0.47 uH Molded Choko

Arco 462

C6 510 pF Dipped Mica

C8 680 pF Feedthru

R1 - 22 11.2 Watt

C9 1.0 uF 50 V Tantalum

R2- 910 . 1 Watt

R3 -12R.1 Watt

C10, C11 0.1 pF Erie Rodcop 100 V

Figure 1.136 MHz Test Circuit

MOTOROLA RF DEVICE DATA

2-582

Output

MRF342

FIGURE 2 - POWER GAIN versus FREQUENCY

FIGURE 3 -

OUTPUT POWER versus SUPPLY VOLTAGE

(f - 136 MHz)
30

Pin-

AVi
.OW

Pout" 24 W VCC-27V
18

Pout*6
5V
V(

110

120

130

3.0

140

S.0

7.0

f. FREQUENCY (MHi)

9.0

Vce. SUPPLY VOLTAGE (VOLTS)

Circuit Tuned for Pout 24WittsatVCc 27Volts

FIGURE 4 - OUTPUT POWER versus INPUT POWER

FIGURE 5 - OUTPUT POWER versus INPUT POWER

(VCc - 27 V)

(VCC " 13.5 V)

100 MHz

ISO

136

u> 80
t

/
*

150

2 4.0
3

1
L
\P

J 2.0
0

0.8

1.2

1.6

2.0

Pin.INPUT POWER (WATTS)

400

600

Pin,INPUT POWER (mW)

FIGURE 6 - SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES

VCC 27 V
f
MHt

Pcu,-24W

136

Zjn Ohms
I.25 +J0.5
1.75 +12.0

ZrjL'Olura
18.5-J10
17-J4.7

160

1.9+J2.5

16.5 - J3.0

too

Zqi* Conjugiti of the optimum lotd

impedance into which thi device
operates at a given output pawn,
voltage,and frequency.

Coordinates in Ohms

MOTOROLA RF DEVICE DATA

2-583

MRF342

FIGURE 7 -

136 MHz TEST AMPLIFIER

FIGURE 8 - PRINTED CIRCUIT BOARD LAYOUT - 136 MHz TEST CIRCUIT

Note: The Printed Circuit Board shown is 75% of the original.

MOTOROLA RF DEVICE DATA

2-584

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF344

The RF Line
60 W

100-150 MHz

RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON

... designed primarily for use in VHF amplifiers with amplitude

modulation and other communications equipment operating to
150 MHz.

Low Cost Common Emitter TO-220AB Package

Specified 27 V, 136 MHz Performance:
Output Power = 60 W
Power Gain = 6.0 dB Min

Efficiency = 50% Min

20:1 VSWR Load Mismatch Capability at Rated Peak Output

Power and Supply Voltage
Other Devices in the Series:
MRF340 8W
MRF342

24 W

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

vEBO

4.0

Vdc

5.0

Adc

Collector-Current Continuous
Peak

Total Device Dissipation - Tq =25C (1)

Derate above 25C

Storage Temperature Range

7$.

6.0

Tstg

87.6

Watts

0.5

mW/C

-65 to+150

STYLE I:
PIN 1 BASE
2 EMITTER
3 COLLECTOR

4 EMITTER

NOTES

1. DIWENSIONSNG AND TOLERANClNGPERANSI

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

V14 5M. 19M.

Symbol

Max

Unit

R0JC

2.0

C/W

2. CONTROLLING DIMENSION: INCH

3. DIMI DEFINESA ZONEWHEREAll BODYAM)
LEADIRREGULARITIES ARE ALLOWED
ICUMfTOtS

(1) This device is designed for RF operation. The total device dissipation rating applies
only when the device is operated as an RF amplifier.

MC HE$

DEM

1S.7S

0570

OHO

966
407
064

ioa

038

0405

0160

0190

0035

Ml
2

173

014}

0147

?68

0095
0110
0014

0155
0033

B
C

0
F

<f
H

J to

OSS

12 70

483

402

3S3
OSS
1477

KAX

05S2

1.39
5.33

oots

0055

0210

0100

0120
0110
0055

304

204

00S3

115

IJS

0045

597

*47

U
V

000

127

IIS
-

204

0735
0000

2-585

0W
0050

045
-

CASE 221A-04
TO-220AB

MOTOROLA RF DEVICE DATA

0105

0500

MRF344
ELECTRICAL CHARACTERISTICS (Tc - 25C unless otherwise noted)

Symbol

Characteristic

Min

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

VfBRICES

V(BR)CBO

V(BR|EBO

4.0

Vdc

(lC" 50 mAdc. lp, =0)

Collector-Emitter Breakdown Voltage

Vdc

(lc - 50 mAdc. VB 0)
Collector-Base Breakdown Voltage

Vdc

Uc = 50 mAdc. Ig =01
Emitter-Base Breakdown Voltage

Vdc

(IE - 5.0 mAdc. lc = 0)

Collector Cutoff Current

'CES

5.0

mAdc

<VCE " 27 Vdc. VB - 0)

ON CHARACTERISTICS
OC Current Gain

hFE

(lC - 2.0 Adc. VCE - 5.0 Vdc)

DYNAMIC CHARACTERISTICS
Output Capacitance

cob

(VCB*27 Vdc. IE O.f I.OMHzl

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

GpE

4.0

4.5

Gpe

6.0

6.7

<VCC = 13.5 Vdc. Pou, - 15 W. f 136 MHz)

Common Emitter Amplifier Power Gain

(VCC * 27 Vdc, Pout - 60 W. f = 136 MHz)

Collector Efficiency

(VCc " 27 Vdc. Pou, 60 W. f = 136 MHzl

Load Mismatch

No Degradation in Power Output

IVcc * 27 Vdc. Pout -- 60 W (peak), f 136 MHz.

Drive modulated with 1.0 kHz square wave. 50%

duty cycle. Load VSWR - 20:1. all phase angles)

FIGURE 1 - 136 MHz TEST CIRCUIT

j^-v-v^__#__rv~irv-v

LI - 3/4" of #20 AWO

C1.C2- 10 pF UNELCO
C3, C8 - 25 pF UNELCO

L2 -

1/2" of #20 AWO

L3 - 2 Turns. 1/8" ID #20 AWG

L4 Copper Strap IS mil Thick

C4, CS, C7 - 100 pF UNELCO

CO, C11 0.1 JiF Erie Redcap
Cg- lOCOpF UNELCO
C10- 1000 pF UNELCO Feedthru
CI 2 1.0 MF 50 V Tantalum
C13- 200pF UNELCO

3/16" X 1/2" L
L6 - 2 Turns #20 AWG 1/4" ID
LS - Forrite Bead on Lead of L7

L7. L8 - 0.16 uH Molded Choke

L9 - VK 200-19/4B

Input/Output Connectors Type N

MOTOROLA RF DEVICE DATA

2-586

MRF344
FIGURE 3 - OUTPUT POWER versus SUPPLY VOLTAGE
(f-136 MHz)

FIGURE 2 - POWER GAIN versus FREQUENCY

1
tS 80

t
60 W

Circuit TuneO forPou 60WimatVCc =27 Volts

"2. Circuit TunedforPoul46WtttsatVrjc-2 7 Volts
1.

Pin t13W

VCC

Pin !-9W

Pou,- 15W VCC- 13.5V

120

130

3.0

f. FREQUENCY (MHz)

5.0 7.0 9.0

VCC, SUPPLY VOLTAGE (VOLTS)

FIGURE 4 - OUTPUT POWER versus INPUT POWER

FIGURE 5 - OUTPUT POWER versus INPUT POWER

(VCC " 27 V)

(VCC - 13.5 V)

1 10 MHz

00 MH

ISO

136

IS/

ISO

3
tr

{= 60

t7>

20
a 5.0
/

2.0'

4.0

6.0
8.0
10
12
14
?!. INPUT POWER (WATTS)

1.0

2.0

3.0

4.0

5.0

'6.0

7.0

Pi,INPUT POWER (WATTS)

FIGURE 6 - SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES

VCC-27 V Pout* 60 W
1

MHz

Zjn Ohms

100

1.33*j2.1

Zol* hms
4.8-jl.S

136

1.25 *(2.86

4.2 - jO.32

ISO

I.2 + J3.S

3.7 +jO.8

2qi*" Conjugate of theoptimum load

impedance into which the device
operates at a givenoutput power

voltage,and frequency.

MOTOROLA RF DEVICE DATA

2-587

8.0

9.0

MRF344

FIGURE 7 -

136 MHz TEST AMPLIFIER

FIGURE 8 - PRINTED CIRCUIT BOARD LAYOUT - 136 MHz TEST CIRCUIT

NOTE: The Printed Circuit Board shown is 75% of the original.

MOTOROLA RF DEVICE DATA

2-588

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF390

The RF Line

NPN Silicon Push-Pull

RF Power Transistor
60 WATTS. 30-500 MHz

... designed primarily for wideband large-signal output and driver amplifier stages
in the 30-500 MHz frequency range.

Specified 28 Volt, 400 MHz Characteristics

Output Power = 60 Watts
Typical Gain = 9.5 dB
Efficiency = 55% (Typ)

CONTROLLED "Q"
BROADBAND PUSH-PULL
RF POWER TRANSISTOR
NPN SILICON

Built-in Input Impedance Matching Networks for Broadband Operation

Push-Pull Configuration Reduces Even Numbered Harmonics
Gold Metallization System for High Reliability
100% Tested for Load Mismatch

<2
CASE 744A-01. STYLE 1

5.8>

<1.4

The MRF330 is two transistors in a single package with separate base and collector leads and emitters
common. This arrangement provides the designer with a space saving device capable of operation in a
push-pull configuration.

PUSH-PULL TRANSISTORS

MAXIMUM RATINGS

Symbol

Value

VceO

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

Vdc

Rating

| Collector-Emitter Voltage

Unh

VEBO

Collector Current Continuous

Adc

Total Device Dissipation @ Tc = 25T (1)

140
0.80

Watts
w/c

Tstg

-65 to +150

200

Symbol

Max

Unit

Rjc

1.25

C/W

Derate above 25C

Storage Temperature Range

Junction Temperature
THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

(1) This device is designed for RF operation. The total dissipation rating applies only when the device is operated as an RF push-pull amplifier.

MOTOROLA RF DEVICE DATA

2-589

MRF390
ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.)
Characteristic

Symbol

Min

V(BR)CEO

Vdc

V(BR)CES

Vdc

V(BR)EBO

Typ

Max

Unit

OFF CHARACTERISTICS (NOTE 1)

Collector-Emitter Breakdown Voltage

(lC = 30 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage

(lC = 30 mAdc, Vbe = 0)

Emitter-Base Breakdown Voltage

dE = 3 mAdc, lc = 0)
Collector Cutoff Current

>CBO

Vdc

mAdc

(Vcb = 30Vdc,,lE = 0)
ON CHARACTERISTICS (NOTE 1)
DC Current Gain

hFE

100

dC = 1 Adc, Vce = 5 Vdc)

DYNAMIC CHARACTERISTICS (NOTE 1)

Output Capacitance

Cob

(Vcb = 28 Vdc, lE = 0, f = 1 MHz)

FUNCTIONAL TEST (NOTE 2 See Hgure 1)

Common-Emitter Amplifier Power Gain

Gpe

7.5

9.5

(VCc = 28 Vdc, Pout = 60 W, f = 400 MHz)

Collector Efficiency

(Vce = 28 Vdc, Pout = 60 W, f = 400 MHz)

Load Mismatch

(Vce = 28 Vdc, Pout = 60 W, f = 400 MHz

VSWR = 30:1, all phase angles)

No Degradation in Output Power

NOTES:

1. Each transistor chip measured separately.

2. Both transistor chips operating in push-pull amplifier.
-0+28V

31 BALUN

SOn SEMI-RIGID

COAXIAL CABLE. 90 MIL00

INPUT'

Figure 1. 400 MHz Test Circuit

CI. C2 240 pF. 100 Mil Chip
C312 pF, 100 Mil Chip
C5 20 pF. 100 Mil Chip
C4. C6 18 pF, 100 Mil Chip
C7. C8 270 pF, 100 Mil Chip
C9. C10. C11. C12 470 pF. 100 Mil Chip
C13. C14 680 pF Feedthru Capacitor

L1. L2 10 mH RF Choke With Ferrite Bead

L3. L4 5 Turns #20 AWG, 1/4" ID
L5. L6 15 Turns #18 AWG Enameled. 0.35" ID Closewound Around
R1. R2 Respectively
Z1 Microstrip Line 850 Mils L x 130 Mils W

C15, C16, C19 0.1 pF Disc Ceramic

Board Material 0.0625" Teflon Fiberglass t, = 2.5 0.05.

Z2. Z3 Microstrip Line 250 Mils L x 130 Mils W

Z4 Microstrip Line 830 Mils L x 130 Mils W

C17, CIS 1 pF. 50 V Tantalum Capacitor

1 oz. cu. clad. Double Sided

R1. R2 910 kn. 2 W Carbon Res.

MOTOROLA RF DEVICE DATA

2-590

MRF390

/ 00 MHz

25 MH

/vx. MHz

8 <o
I

|30

100 MHz

1 25

2 20

\lY//
//
r

's/

vcc == 28V

^400MHz

%
^500 MHz

//til MHz

vcc

= 13.5 V

12. . 14

Pin. INPUT POWER (WATTS)

Pin,INPUT POWER (WATTS)

Rgure 2. Output Power versus Input Power/Frequency

Figure 3. Output Power versus Input Power/Frequency

100
90
f == 225IV Hz

Pfn =

6.2 W

Pin = 10.8W

f = 400 M to

3.4 W

| 60

6.9 W

4.7 W

H 50
!.25W

I 40

%M
o? 20
10
0

VCC, SUPPLY VOLTAGE (VOLTS)

Vcc.SUPPLY VOLTAGE (VOLTS)

Rgure 5. Output Power versus Supply
Voltage 400 MHz

Rgure 4. Output Power versus Supply

Voltage 225 MHz

'. VCC = 28 V Pout

f
MHz
100
225
400
450
500

= 60W

Zin

ZOL*

OHMS

0.576+J0.436
1.24+ J3.71

16.1-J15.8
12.95-J8.8

7.76+ J4.14

10.6-J4.0

2.28+J3.16
1.45+J5.1

9.2-J2.0
7.38+J0.33

\S\\',

ZQL* = CONJUGATE OF THE OPTIMUM LOAD IMPEDANCE

INTOWHICHTHE DEVICE OUTPUT OPERATESAT A

/ GIVEN OUTPUT POWERVOLTAGE ANDFREQUENCY.

SMITH CHART Zo = 20 OHMS I

Rgure 6. Series Equivalent Input/Output Impedances

MOTOROLA RF DEVICE DATA

2-591

///*/*

MRF390

NOTE: The Printed Circuit Board shown is 75% of the original.

Figure 7. 400 MHz Test Circuit and Photomaster

MOTOROLA RF DEVICE DATA

2-592

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF392

The RF Line

NPN Silicon Push-Pull

RF Power Transistor
125 WATTS, 30-500 MHz

... designed primarily for wideband large-signal output and driver amplifier stages
in the 30-500 MHz frequency range.
Specified 28 Volt, 400 MHz Characteristics
Output Power = 125 W
Typical Gain = 10 dB
Efficiency = 55% (Typ)
Built-in Input Impedance Matching Networks for Broadband Operation
Push-Pull Configuration Reduces Even Numbered Harmonics
Gold Metallization System for High Reliability

CONTROLLED "Q"
BROADBAND PUSH-PULL

RF POWER TRANSISTOR
NPN SILICON

100% Tested for Load Mismatch.

<2
6>

5,8>-

<1.4

The MRF3S2 is two transistors in a single package with separate base and collector leads and emitters
common. This arrangement provides the designer with a space saving device capable of operation in a
push-pull configuration.

PUSH-PULL TRANSISTORS

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

Vceo

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

vebo

Vdc

Collector Current Continuous

Total Device Dissipation @ Tc = 25C(1)

Derate above 25C

Storage Temperature Range

Junction Temperature

Adc

270

Watts

1.54

WVC

Tstg

-65 to +160

200

Symbol

Max

Unit

Rwc

0.65

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

(1)Thisdeviceis designed for RFoperation.The total dovicedissipationratingappliesonlywhen the deviceis operated as an RFpush-pullamplifier.

MOTOROLA RF DEVICE DATA

2-593

MRF392
ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwisenoted.)
Characteristic

Symbol

Min

Collector-Eminer Breakdown Voltage

(lC = 50 mAdc, Ib = 0)

v(BR)CEO

Collector-Emitter Breakdown Voltage

V(BR|CES

V(BR)EBO

Typ

Max

Unit

OFF CHARACTERISTICS (NOTE 1)

dC = 50 mAdci Vbe = )
Emitter-Base Breakdown Voltage

E = 5 mAdc, lc = 0)
Collector Cutoff Current

ICBO

(Vcb = 30 vdc, Ie = o)

Vdc

mAdc

ON CHARACTERISTICS (NOTE 1)
DC Current Gain

hFE

(lC = 1 Adc, VCe = 5 Vdc)

100

DYNAMIC CHARACTERISTICS (NOTE 1)

Output Capacitance

Cob

(Vcb = 28 Vdc, Ie = 0, f = 1 MHz)

115

FUNCTIONAL TEST (NOTE 2 See Rgure 1)

Common-Emitter Amplifier Power Gain

Gpe

(Vce = 28 Vdc, Pout = 125 W, f = 400 MHz)

Collector Efficiency

(Vce = 28 Vdc, Pout = 125 W, f = 400 MHz)

Load Mismatch

(Vce = 28 Vdc, Pout = 125 W, f = 400 MHz

No Degradation in Output Power

VSWR = 30:1, all phase angles)

NOTES:

1. Each transistor chip measured separately.

2. Both transistor chips operating in push-pull amplifier.
onr-v^eo+28V

llrl

^cis^cnjcisjcw

CI. C2 240 pF. 100 Mil Chip Cap (ATCI or Equivalent

C3 3.6 pF, 100 Mil Chip Cap (ATC) or Equivalent

B1 Balun. 50 ft Semi-Rigid Coaxial Cable 86 Mil OD. 2* L

B2 Balun. 50 II Semi-Rigid Coaxial Cable 86 Mil OD. 2" I

C4, C8 8.2 pF. 100 Mil Chip Cap (ATC) or Equivalent

C5, C6 20 pF, 100 Mil Chip Cap (ATC) or Equivalent
C7 18 pF. Mini Unelco or Equivalent
C9, C10 270 pF, 100 Mil Chip Cap (ATC) or Equivalent
C11. C12. C16. C17 470 pF 100 Mil Chip Cap (ATC) or Equivalent
C13. C18 680 pF Feedthru
C14, C19 0.1 pF Erie Redcap or Equivalent
CIS 20 mF. 50 V

Z1
Z2
Z3
Z4
Z5
Z6

Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip

Board Material

LI. L2 0.15 pH Molded Choke With Ferrite Bead

13. L4 2-1/2 Turns #20 AWG. 0.200 ID
L5. L6 3-1/2 Turns #18 AWG, 0.200 ID

Line 270 Mil L x 125 Mil W

Line 375 Mil L x 125 Mil W
Line 280 Mil L x 125 Mil W
Line 300 Mil L x 125 Mil W

Line 350 Mil L x 125 Mil W

Line 365 Mil L x 125 Mil W

- 0.0625" Teflon Fiberglass tr - 2.5 : 0.05 1 oz. Cu.

CLAD, Double Sided

Rgure 1. 400 MHz Test Fixture

MOTOROLA RF DEVICE DATA

2-594

MRF392
^

/tOOMHz

'"'225 MHz

*>Y

vce

= 28 Vdc

-"225 MHz^. -^OOMrfz

/
/

VCC

= 13.5 Vdc

|
4

Pin,INPUT POWEH IWATTS)

Pjr,, INPUT POWER IWATTS)

Rgure 2. Output Power versus Input Power

Rgure 3. Output Power versus Input Power

160

10W

Pin =

Pin = 14W
140

120

120
I

= 7W

SS 100

^100 MHz

500 MHz

10W

100

= 5W

= 7W

VCC. SUPPLY VOLTAGE (VOLTS)

Vce.SUPPLY VOLTAGE (VOLTS)

Rgure 4. Output Power versus Supply

Rgure 5. Output Power versus Supply

Voltage 400 MHz

Voltage 225 MHz

Figure 6. Series Equivalent Input/Output Impedance

MOTOROLA RF DEVICE DATA

2-595

MRF392

MJB
MRF392
400MMZ

IIMIFTf-l

NOTE: The Printed Circuit Board shown is 75% of the original.

Figure 7. Test Circuit Photomaster

Figure 8. 400 MHz Test Circuit

MOTOROLA RF DEVICE DATA

2-596

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF393

The RF Line

NPN Silicon Push-Pull

RF Power Transistor
100 WATTS, 30-500 MHz

... designed primarily for wideband large-signal output and driver amplifier stages

CONTROLLED "Q"
BROADBAND PUSH-PULL
RF POWER TRANSISTOR

in the 30-500 MHz frequency range.

Specified 28 Volt, 500 MHz Characteristics

Output Power = 100 W
Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C)
Efficiency = 55% (Typ)
Built-in Input Impedance Matching Networks for Broadband Operation
Push-Pull Configuration Reduces Even Numbered Harmonics
Gold Metallization System for High Reliability

NPN SILICON

100% Tested for Load Mismatch

^2
CASE 744A-01

5.8>

<1.4

The MRF393 is two transistors in a single package with separate base and collector leads and emitters

common. This arrangement provides the designer with a space saving device capable of operation in a
push-pull configuration.

PUSH-PULL TRANSISTORS

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

VceO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

Vebo

Vdc

Adc

270

Watts

1.54

W/C

Tstg

-65 to +150

200

Symbol

Max

Unit

Rftic

0.65

Rating

Collector Current Continuous

Total Device Dissipation <& Tq = 25C (1)

Derate above 25C

Storage Temperature Range

Junction Temperature
THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

(1)This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push-putl amplifier.

MOTOROLA RF DEVICE DATA

2-597

MRF393

ELECTRICAL CHARACTERISTICS (Tc = 25C unlessotherwise noted.)

Characteristic

Symbol

Min

Collector-Emitter Breakdown Voltage

dc = 50 mAdc. la = 0)

V(BR)CEO

Vdc

Collector-Emitter Breakdown Voltage

dC = 50 mAdc. Vbe = 0)

V(BR)CES

Vdc

Emitter-Base Breakdown Voltage

(IE = 5 mAdc, lc = 0)

V{BR)EBO

Vdc

Typ

Max

Unit

OFF CHARACTERISTICS (NOTE 1)

Collector Cutoff Current

(CBO

(Vcb = 30 Vdc, Ie = 0)

mAdc

ON CHARACTERISTICS (NOTE 1)
DC Current Gain

hpE

dC = 1 Adc, Vce = 5 Vdc)

100

DYNAMIC CHARACTERISTICS (NOTE 1)

Output Capacitance

(Vcb b 28 vdc, ie

Cob

0, f = 1 MHz)

115

FUNCTIONALTEST (NOTE 2 See Figure 1)

Common-Emitter Amplifier Power Gain

7.5

8.5

(Vce = 28 Vdc, Pout = 100 W, f = 500 MHz)

Collector Efficiency

(Vce = 28 Vdc, Pout = 100 W, f

500 MHz)

Load Mismatch

(Vce = 28 Vdc, Pout = 100 W, f

VSWR = 30:1, all phase angles)

500 MHz

No Degradation in Output Power

NOTES:

1. Each transistor chip measured separately.

2. Both transistor chips operating in push-pull amplifier.

C9 CIO C11

C12 I

C13 C14 C15

_l_ T
T

-L
_l_

C16

III
CI. C2, C7, C8 240 pF 100 mil Chip Cap
C3 15 pF 100 mil Chip Cap
04 24 pF 100 mil Chip Cap
C5 33 pF 100 mil Chip Cap
C6 12 pF 100 mil Chip Cap

L1-L2 0.15 pH Molded Choke with Ferrite Bead

L3-L4 2-1/2 Turns #20 AWG 0.200" ID
L5-L6 3-1/2 Turns #18 AWG 0.200- ID

B1, B2 Balun 50 (1 Semi Rigid Coax. 86 mil OD, 2" Long

C9, C13 1000 pF 100 mil Chip Cap

C10, C14 680 pF Feedthru Cap
C11, C15 0.1 /iF Ceramic Disc Cap

21, Z2 850 mil Long x 125 mil W. Microstrip

23, Z4 200 mil Long x 125 mil W. Microstrip
Z5, Z6 800 mil Long x 125 mil W. Microstrip

C12.C16 50/iF50V

Board Material 0.0325* Teflon-Fiberglass, cr = 2.56.

1 oz. Copper Clad both sides.

Rgure 1. 500 MHz Test Fixture

MOTOROLA RF DEVICE DATA

2-598

MRF393

OUTPUT POWER versus INPUT POWER

CLASSC

Tm i

120

MHz

/ MHz

MHz

s60

"500

| 50

MHr

| 80

| 40

5 30

225
400
MHr- -MKz-

/ 100

225

/ too

140

-500MHz

/
20 /
/-,
s

INPUT POWER (WATTS)

Rgure 3. Vqc = 13.5 V

Rgure 2. Vce = 28 V

OUTPUT POWER versus SUPPLY VOLTAGE

CLASSC
120

r-m-wy/

Pin =
16 W

_ 100

_100

12 W

1I 80

t
= 6W

y
>s
>

's
r^

8W
s

'\y

^
0>

y*r

Figure 5. f = 500 MHz

Rgure 4. f = 225 MHz

Zqi'

SUPPLYVOLTAGE IVOLTSI

Conjugal* of iht optimum load'mpeCance

mo *hicn (he device output operate* at a

140

given output po*tr. vottageand t'equertv

100

VCC = 28V Pout

fMHt

2in
0.8S + jO

too
225

0.58 + |2.6

400
500

3.00+ J5.9
4.80 + |3.0

f = 500 Mi te

= 10OW

| 40

zof
7.8 - J5.S
5.0 - |3.2
3.2 - jO.6
2.9 + jl.2

= 28

73
O

= 200 mA

20
0

8
10
12
14
INPUT POWER (WATTS)

Rgure 7. Class AB Output Power versus Input Power

Rgure 6. Series Equivalent Input/Output Impedance

MOTOROLA RF DEVICE DATA

2-599

MRF393

NOTE: The Printed Circuit Board shown is 75% of the original

Figure 8. Test Circuit Photomaster

Figure 9. 500 MHz Test Circuit

MOTOROLA RF DEVICE DATA

2-600

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF401

The RF Line
25 W PEP-30 MHz
RF POWER
TRANSISTOR
NPN SILICON

NPN SILICON RF POWER TRANSISTORS

... designed primarily for applications as a high-power linear

amplifier from 2.0 to 75 MHz.

Specified 28 Volt, 30 MHz Characteristics Output Power = 25 W (PEP)

Minimum Gain = 13dB

Efficiency = 40%

Intermodulation Distortion at 25 W (PEP)

IMD=-32dB(Max)

Isothermal-Resistor Design Results in Rugged Device

MAXIMUM RATINGS
Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

Collector Current - Continuous

3.3

Adc

Total Device Dissipation <5> Tc - 25C(1)

Watts

Rating

Derate above 25C

Storage Temperature Range

0.286

W/C

-65 to+160

(1) These devices ore designed for RF operation. The total device dissipation rating
applies only when the devices ero operated as Class BorCRF amplifiers.

NOTES:
1. DIMENSIONING AND T0LERANCINGPERANSI
Y14.SM. 1982.
2. CONTROLLING DIMENSION:INCH.

MHIWETERS
MAX
9.78
&38
20.07

INCHES
MAX
MIN
0.3S5
0.330
0.320
0670
0.790
0715
0.235

DM
A
D
C
0
E
4

MM
9.40
8.13
17.02
S.4S
1.78
0.03

12.45

1.40

1.78

0.055

45* NOM
1.27
ISO
121
4.01
4.52
2.54
2.11

0.299
0.158
0.083

2.49

3.35

0.098

P
R

597

0.18

0.370

0.070

0.003
0.490

2-601

0.070
45* NOM

CASE145A-09

MOTOROLA RF DEVICE DATA

0.007

0.050
0.307
0.178
0.100
0.132

MRF401
ELECTRICAL CHARACTERISTICS ITc =25C unlessotherwisenoted.)
Characteristic

Symbol

Typ

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC =50 mAdc. IB - 0)

Collector-Emitter Breakdown Voltage

V(BR)CE0

V(BRICES

V(BR)EB0

4.0

Vdc

(lC = lOmAdc, VBE =0)

Emitter-Base Breakdown Voltage

Vdc

(IE - lOmAdc. IC = 0)
ON CHARACTERISTICS
DC Current Gain

hFE

(lC = 1.0 Adc, VC =5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

cob

IVCb - 30 Vdc. IE = 0. f = 1.0 MHz)

FUNCTIONAL TEST (Figure 11

Common-Emitter Amplifier Power Gain

Gpe

(Pout " 25 Watts PEP,lc (max) = 1.12 Adc. VCc = 28 Vdc.

f = 30 MHz)

Collector Efficienty

(Pout 25 Watts PEP. Ic (max) = 1.12 Adc. VCc = 28 Vdc.

f = 30 MHz)

Intermodulation Distortion (1)

IMD

-32

IPout = 25 Watts PEP, lc = 1.12Adc, Vce = 28 Vdc,

fl = 30 MHz, f2 = 30.001 MHz)
(1) To Mil-Std-1311 Version A. Test Method 2204B. Two Tone, Reference each Tone.

FIGURE 1 -30 MHz LINEAR TEST CIRCUIT

I jr-1 V 9

out

CI. CJ -

ARCO4S0 ISO 7(0 pF

C3. C4 -

ARCO 404 2S 280 pF

120 pF Dtppac) Mica

C8. C?
Ce
CO

100 (>F 1ft Vdc

6S0 pF F.T. All*n e'adlay
1.0 jiF 35 V Tantalum

CR1

- IN494I

Mr1 5X" *

I T u n 16 0.29" 10
6 Torn. l8 0 5" IO
7 Turnt P2Q 0.38" IO

10 iiH Molded Choke Oelevan

RFCI
RFC2

Ferroacuse VK200/20-4B
SFairoacuM SeSlOSSia

Input/Output Connoctort UG93 A/u

lOfl 1(2 Watt 10%

JJJ
Rl

Ad|utt 04a* (Saaal lor Iqq - 20 mA vwitft No RF Applied

MOTOROLA RF DEVICE DATA

2-602

-4^ RF Output

MRF401

FIGURE 3 - PARALLEL EQUIVALENT INPUT

CAPACITANCE versus FREQUENCY

FIGURE 2 -PARALLEL EQUIVALENT INPUT RESISTANCE

versus FREQUENCY

2500

\lrr--

1
ICO=20mA
P0U| 25 W (PEP

2000

28 Vdc
<

CO 20 mA

2 <,50
a
<->
Ul z

!i <

_i <
OC 7Z

2 =

soo

I.FREQUENCYIMH/I

I. FREQUENCY (MHz)

FIGURE 4 - PARALLEL EQUIVALENT OUTPUT

CAPACITANCE versus FREQUENCY

ICQ=20 mA
Pout'^i Wl

< "400

I. FREQUENCY (MHz)

FIGURE 5 -

FIGURE 6 -

POWER GAIN versus FREQUENCY

IMD versus POWER OUTPUT

Two Tone Tost

Pout * <so irtri

_25
5

-20

Z20
<

!^
i

IS MH

o a

-40

2 Z
DC O

4MH

0-10

til

30 MHz'

s.o

-60
o

5.0

-BO

5.0

Pout. OUTPUT POWER (WATTS PEP)

f, FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-603

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF406

The RF Line
20W(PEP)-30MHz

RF POWER
TRANSISTOR
NPN SILICON

NPN SILICON RF POWER TRANSISTOR

... designed primarily for application as a power linear amplifier

from 2.0 to 30 MHz.

Specified 12.5 Volt, 30 MHz Characteristics Output Power = 20 W(PEP)

Minimum Gain = 12 dB

Efficiency = 45%
Intermodulation Distortion @ 20 W(PEP) IMD=-30dB{Min)

100% Tested for Load Mismatch at all Phase Angles with

30:1 VSWR

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Collector-Base Voltage

vCEO
VcbO

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

4.0

Adc

0.48

Watts
W/C

-65 to +150

200

Collector-Emitter Voltage

Collector Current Continuous

Withstand Current

r~r
STYLE I:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR

(t = 5.0 s)

Total Device Dissipation @ Tc = 25C

Derate above 25C

Storage Temperature Range

Junction Temperature

Tstn
Tj

THERMAL CHARACTERISTICS
Characteristics

Thermal Resistance. Junction to Case

Symbol

Max

Unit

R9JC

2.2

C/W

NOTES

1 DIMENSIONING AN0T0LERANONGPER
ANSI Y14 SM. 1932.
2 CONTROLLING DIMENSION: INCH.
INCKES

DM
A

MILLIMETERS
Mm
MAX

MAX

2439

0-960

0990

940

990

0.370

713

0.229
0.215
0.035

0390
0281
0235
0105

c
D

5.82
547

E
H
)
X
M
0

2.16
381

596
266

457
015

0.150
0004

0180

Oil

1004

10.28

0.395

0405

40"

50*

2-604

50"

2.88

330

0.113

0.130

6.23

647

0245

0255

2007

2057

0790

1829

1854

0.720

0810
0730

CASE 211-07

MOTOROLA RF DEVICE DATA

0006

MRF406
ELECTRICAL CHARACTERISTICS (TC- 25C unlessotherwise noted.)
Symbol

Characteristic

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

V(BR)CES

V(BR)CB0

V(BR)EB0

4.0

Vdc

IIC- 50mAdc, lB = 0)
Collector-Emitter Breakdown Voltage

Vdc

(IC50mAdc.VBE-0)
Collector-Base Breakdown Voltage

Vdc

(lC50mAdc, Ie = 0)
Emitter-Base Breakdown Voltage

Vdc

(lE = 1.0 mAdc. IC=0)

Collector Cutoff Current

'CES

5.0

mAdc

<VCE" 12.5 Vdc, Vbe-0)

ON CHARACTERISTICS

DC Current Gain

"FE

(lC- 1.0Adc, VCE" 5.0Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

150

200

(VCB - 12.5 Vdc, lE - 0, f - 1.0 MHz)

FUNCTIONAL TESTS (Figuro 1)
Common-Emitter Amplifier Power Gain

GpE

pout

(VCc- 12.5Vdc,Pout-20W(PEP),lc(max)=. 1.75 Adc.

ICQ = 25 mAdc, f = 30, 30.001 MHz)
Power Output

Watts (PEP

(VCE " 12.5 Vdc, f = 30 MHz)

Collector Efficiency

(VCC- 12.5 Vdc, Pout - 20WIPEP), lC(max) - 175 Adc.

ICQ - 25 mAdc, f 30, 30.001 MHz)
Intermodulation Distortion (1)

IMD

-35

-30

(VcE- 12.5 Vdc, Pout = 20 W(PEP),lc<max) = 1-75Adc,

ICQ = 25 Adc, f = 30, 30.001 MHz)
Load Mismatch

(Vce" 12.5Vdc,Pout20W(PEP). IC= 1.75Adc.

>30:1 All Phase Angles

ICQ - 25 mAdc, f - 30, 30.001 MHz)

(1) To Mil-Std-1311 Version A, Test Method 2204B, Two Tone, Reference each Tone.
FIGURE 1 -30 MHz TEST CIRCUIT SCHEMATIC

>V*r-J-

p
C6

1Tc

RF,npul>-

-mm
irxyw^rr
C9
Tf^CIO
rsi;r
:C7

TrZCB
.-ptu

/rsta

yp.

12.5 Vdc

L2-

Q-<" F Output

tSk^ ^T(lT^

C1.C2, C4

ARCO 466

ARCO 469

CS. C8, C9

0.1 pF Disc Ceramic

1000 JJF.3 V Electrolytic

lOOOpF. UNELCO

CIO

100 *lF,15 V Eloctrolytic

100 Ohm,25 W, Wiro Wound

10 uH, Molded Choko

10 Ohm, 54 W. Carbon

6 Forrito Beads, FERROXCUBE #56-590-65/3B

0.15 mH, Moldod Choko

15 Turns of #20 AWG Enameled Wiro.

1/4" I.O.. Clow Wound
4 Turns of #18 AWG Wiro. 5/16" I.D..
3/8" Long.

MOTOROLA RF DEVICE DATA

2-605

MRF406

FIGURE 2 - OUTPUT POWER versus INPUT POWER

FIGURE 3 - OUTPUT POWER versus SUPPLY VOLTAGE

Vce 12.5 V
ICQzmA

IMO

*-in rifl

ICQ* 25 mA

TWO TONE TEST:

0.4

0.8

1.2

Pjn, INPUTPOWER (WATTS PEP)

Vce. SUPPLY VOLTAGE (VOLTS)

FIGURE 5 - INTERMODULATION DISTORTION versus

FIGURE 4 - POWER GAIN versus FREQUENCY

OUTPUT POWER

1
o

VCC" 12.5 V
ICQ 25 mA

z
o

5 -30

^""*<

= .35

3R0 0H0ER

<s.

Vce-12.5 V
ICQ 25 mA
Pout*20WPE P

1.5

2.0

3.0

-40

0RDEI

5.0

7.0

-45

5.0

I. FREQUENCY (MHi)

FIGURE 6 -

DC SAFE OPERATING AREA

2-5

'-0

s
<

\
\

3 0.5
oc

a 0.25

2! C

Pout. RF OUTPUT POWER (WATTSPEP)

0.1
0.05

2.0

5.0

Vce. COLLECTOR-EMITTER VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-606

100

MRF406

FIGURE 7 -SERIES EQUIVALENT IMPEDANCE

FIGURE 9 - PARALLEL EQUIVALENT OUTPUT

RESISTANCE versus FREQUENCY

FIGURE 8 - PARALLEL EQUIVALENT OUTPUT

CAPACITANCE versus FREQUENCY

Vce-12.5 V
- lea-25 mA
Pout-20W(PEP)

5.0

7.0

5.0

7.0

I. FREQUENCY (MHt)

MOTOROLA RF DEVICE DATA

2-607

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF410

The RF Line

NPN Silicon
RF Power Transistor
10 W-30 MHz

... designed for high gain driverand output linear amplifier stages in 1.5to 30 MHz

RF POWER
TRANSISTOR
NPN SILICON

HF/SSB equipment.
Specified 28 Volt, 30 MHz Characteristics
Output Power = 10 W
Minimum Gain = 13 dB

Efficiency = 40%
Intermodulation Distortion @ 10 W (PEP)
IMD = -30 dB (Max)

100% Tested for Load Mismatch at All Phase Angles With 30:1 VSWR
Direct Replacement for 2N6370

CASE 211-07, STYLE 1

MRF410

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

Vceo

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

VEBO

Vdc

1.5

Adc

Watts

0.23

VVVC

Tstg

-65 to +150

200

Collector Current Continuous

Total Device Dissipation @ Tc - 25C(1)

Derate above 25*C

Storage Temperature Range

Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

RflJC

4.35

C/W

Symbol

Min

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (Tc = 25Cunless otherwise noted)

Characteristic

Typ

Max

UnH

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (lc = 20 mAdc, Is - 0)

V(BR)CEO

Collector-Base Breakdown Voltage dc - 50 mAdc, lg = 0)

V(BR|CES

Emitter-Base Breakdown Voltage (lg = 10 mAdc, lc = 0)

v(BR)EBO

Collector Cutoff Current (Vce = 28 Vdc, Vbe = 0)

'CES

Vdc
Vdc

Vdc

100

mAdc

ON CHARACTERISTICS

DCCurrent Gain dc = 1 Adc, Vce - 5 Vdc)

"FE

DYNAMIC CHARACTERISTICS

Output Capacitance (Vcb = 28 Vdc, lg = 0, f = 1 MHz)

Cob

(1) These devices are designed for RF operation. The total device dissipation rating applies only when
the devices are operated as RF amplifiers.

MOTOROLA RF DEVICE DATA

2-608

pF
(continued)

MRF410
ELECTRICAL CHARACTERISTICS continued <TC = 25C unless otherwise noted)
Characteristic

Symbol

Min

Gpe

Unit

Typ

FUNCTIONAL TESTS (SSB)

Common-Emitter Amplifier Gain

(Vce = 28 Vdc, Pout = 10 W (PEP), f1

f2 = 30.001 MHz, Icq = 25 mA)

30 MHz,

Collector Efficiency

(VCc = 28 Vdc, Pout = 10 W (PEP),f1 = 30 MHz,

f2 = 30.001 MHz, Icq = 25 mA)
(Vce = 28 Vdc, Pout = 10 W (PEP), f1
f2 = 30.001 MHz, IcQ = 25 mA)

-30

-35

IMD(d3)

Intermodulation Distortion (1)

30 MHz,

No Degradation in Output Power

Load Mismatch

(Vce = 28 Vdc, Pout = 10 W (PEP), fl = 30 MHz,

f2 = 30.001 MHz, Icq = 25 mA, VSWR 30:1 at All Phase Angles)
CLASS A PERFORMANCE

GPE

IMD|d3)
IMD(d5)

Power Gain and Intermodulation Distortion (1)

(Vce = 28 Vdc, Pout = 4 W (PEP). Icq = 500 mA,

f1 = 30 MHz, f2 = 30.001 MHz)
(1) To MIL-STD-1311 Version A, Test Method 2204B, Two Tone, Reference each tone.

28 Vdc

1300 pF Dipped Mica

C2,C3,C5,C6 0.1 ftF Type 1812 Chip or Equivalent
100 AF/16 V Electrolytic
C4
0.01 (iF Type 1812 Chip or Equivalent
C7
C8
10 mF/35 V Electrolytic

Ferroxcube VK200 10/3B or Fair-Rite Products

Corporation 2843003102
15 Turns #22 AWG Enameled Wire, Close

RF Transformer 9:1 Impedance Ratio. See

Wound, V*" ID

5 Ohms/5 W
10 Ohms/V4 W Carbon

Motorola Application Note AN749, Figure 4 for

R2
D1

MR820-826 or Equivalent

Products Corporation 2643006801

Details. Ferrite Material: 2 each Fair-Rite

Rgure 1. 30 MHz Test Circuit

1
S

f - : 030001 MHz
'CQ == 20 mA

f = 30 Ml 1?

ice = 20 mA
VC ; = 28
0

0.2

0.4

0.6

0.8

Vce.SUPPLY VOLTAGE (VOLTS)

Pjn. INPUT POWER (WATTSI

Rgure 3. Output Power versus Supply Voltage

Rgure 2. Output Power versus Input Power

MOTOROLA RF DEVICE DATA

2-609

MRF410

f. FREQUENCY (MH;)

Pout. OUTPUT POWER (WATTS PEP)

Rgure 4. PowerGainversus Frequency

Rgure S. Intermodulation Distortion versus

Output Power

B"
S

1
_

Tc = 2

3 05
_

0.25
o

-01

0.05

5
10
20
50
Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS)

100

Rgure 6. D.C. Safe Operating Area

I. FREQUENCY (MHi)

Rgure 7. Output Capacitance versus Frequency

loo
VCC -28 V
'CQ = 20 mA

pout =

10V VPEP

f, FREQUENCY (MHi)

Rgure 8. Output Resistance versus Frequency

MOTOROLA RF DEVICE DATA

2-610

MRF410

Figure 9. Series Equivalent Input Impedance

MOTOROLA RF DEVICE DATA

2-611

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF421
MRF421MP

The RF Line
100W{PEP)-30MHz

RF POWER
TRANSISTORS
NPN SILICON

NPN SILICON RF POWER TRANSISTOR

. . . designed primarily for application as a high-power linear ampli

fier from 2.0 to 30 MHz.

Specified 12.5 Volt, 30 MHz Characteristics -

Output Power = 100W(PEP)

Minimum Gain = 10 dB

Efficiency = 40%

Intermodulation Distortion @100 W (PEP) IMD = -30dB(Min)

100%Tested for Load Mismatch at all Phase Angleswith

30:1 VSWR

STYLE 1
PIN I EMITTER
2 BASE
3. EMITTER

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

vCEO

Vdc

Collector-Bate Voltage

vCBO

Vdc

vEBO

3.0

Vdc

Emitter-Base Voltage
Collector Current Continuous
Withstand Current 10 s

Total Device Dissipation @Tc = 25C

c
-

Derate above 25C

Storage Temperature Range

Tstg

Adc

290

Watts

1.66

W/C

-65 to +150

MRF421MP is for ordering an hpE matched pair.

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

ir---^^rn
NOTES

1 DIMENSIONING AND T0LERANC1NG PER

ANSI Y14 5M. 1932
2 CONTROLLING DIMENSION:INCH

2439

MILLIMETERS
mm
MAX
2514

0960

0.990

1152

1295

0465

0510

SS2

638

0229
0216
0034

dim

INCHES
MIN
MAX

549

596

E
N
J

214

779

366

452

0144

003

017

1105

0003
0435

45-NOM

Symbol

Max

Unit

2.93

330

RejC

0.6

C/W

6.25
1829

1854

647

2-612

45' NOM
0115
0246
0720

CASE 211-11

MOTOROLA RF DEVICE DATA

0275

0235
0110
0178
0007

0130
0255

0730

MRF421, MRF421MP
ELECTRICAL CHARACTERISTICS <TC 25C unless otherwise noted.)

Characteristic

Symbol

1 U"

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

V(BR)CEO

V(BR)CES

V(BR)CB0

V(BR)EBO

3.0

(iC- SOmAdc, lB0)

Collector-Emitter Breakdown Voltage

Vdc

(IC-200 mAdc, VBE0)

Collector-Bass Breakdown Voltage

Vdc

(IC =200mAdc. IE0)

Emitter-Base Breakdown Voltage

Vdc

(lE- 10 mAdc, lc = 0)
'ess

Collector Cutoff Current

mAdc

(VC - 16 Vdc, VBE - 0. Tc - 25C)

ON CHARACTERISTICS

hpE

DC Current Gain

dp 5.0 Adc. VCe S.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

800

650

Cob

|VCB- 12.5 Vdc, lE' 0. f- 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

GPE

<VCC- 12.5 Vdc, Pout- 100W,lC(maX) = lOAdc,

ICQ 150 mAdc, f - 30, 30.001 MHz)
Collector Efficiency

IVCC " 12.5 Vdc, Pout = 100 W, lc(max) = 10 Adc,

ICQ - 150 mA, f = 30, 30.001 MHz)

Intermodulation Distortion (1)

-33

IMD

-30

(VCE - 12.S Vdc, Pout = 100 Watts, lc " 10 Adc,

ICQ " ISO mA, f = 30, 30.001 MHz)
(1) To proposed EIAmethod of measurement. Reference peak envelope power.

FIGURE 1 - 30 MHz TEST CIRCUIT SCHEMATIC

C1,C2,C4C3 -

170-780 pF. ARCO 469

80-480 pF. ARCO 466

R2 CR1 -

C5.C7.C10 - ERIE 0.1 UF. 100 V

LI -

10 n. 1 Watt Carbon
IN4997

3 Turns. #16 Wire, 5/16" I.D., 5/16" Long

C6-

MALLORY 500 uF 16 V Electrolytic

L2 -

C9 -

IOOuF.15 V Electrolytic

L3 -

1 3/4 Turns, 1/8" Tubing, 3/8" I.D., 3/8" Long

C8 R1 -

1000 pF. 350 V UNDERWOOD

ion. 25 Watt Wirawound

L4 -

10 UH Molded Choke

LS -

10 Forrlto Boadt - FERROXCUBE #56-590-65/36

12 Turns, #16 Enamalad Wiro Closowound. 1/4" I.D.

MOTOROLA RF DEVICE DATA

2-613

MRF421, MRF421MP
FIGURE 2 - OUTPUT POWER versus INPUT POWER

FIGURE 3 - OUTPUT POWER versus SUPPLY VOLTAGE

Vce- 12.5 V
ICQ 150 mA

TWO TONE TEST:

f30 30.001 M Hz

120

IMD--30dB

ICQ " 150 mA

-30.30.001 MHi

120

I
s

2 80

0
0.

5
0

O *"

0?
0

4 0

Vce SUPPLY VOLTAGE (VOITSI

Pin. INPUTPOWER (WATTS PEP)

FIGURE 5 -

FIGURE 4 - POWER GAIN versus FREQUENCY

INTERMODULATION DISTORTION
versus OUTPUT POWER

-Vce I2-5V
ICQ" 150 mA
20

-25

<
0

3rd0rda

VCC" 12.5 V
ICQ" 150 m/
100 W PFP

L-

5th Order
n

1.5

2.0

3.0

5.0

7.0

I, FREQUENCY (MHiJ

FIGURE 6 -

100

Pout. OUTPUT POWER (WATTS PEP)

OC SAFE OPERATING AREA

FIGURE 7 - SERIES EQUIVALENT IMPEDANCE

" Nj

at
<
1ce
IE
3
en

a.o

Tr-25C

4.0

Jj 70
u

.5 :::::

O.B

FREQUENCY
MHz
30
15
7.5
2.0

0.4

2.0

5.0

Vce. COLLECTOR-EMITTER VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-614

Zin
Ohmi
0.7 -J.5

1.39 -J1.1
2.8-J1.9
5J5-J2.2

MRF421, MRF421MP

FIGURE 9 - OUTPUT RESISTANCE versus FREQUENCY

FIGURE 8 - OUTPUT CAPACITANCE versus FREQUENCY

2.5

20.000

16.000

-> X

<1U

- | 12.000

is2-0

Pouf 100WPEP

Z J

VCC" 12.5 V
ICQ 150 mA

Vce- 12.5 V

gz'5
v

UJ g

2= io

Jo hi

Jo WOO
0
1.5

2.0

3.0

5.0

7.0

'1.5

2.0

I. FREQUENCY(MHi)

MOTOROLA RF DEVICE DATA

2-615

3.0

5.0
7.0
10
I. FREQUENCY(MHi)

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF422
MRF422MP

The RF Line
150W(PEP)-30MHz

RF POWER
TRANSISTORS

NPN SILICON RF POWER TRANSISTORS

NPN SILICON

... designed primarily for applications as a high-power linear ampli

fier from 2.0 to 30 MHz.

Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W(PEP)

Minimum Gain = 10 dB

Efficiency - 40%

Intermodulation Distortion @ 150 W(PEP) IMD = -30dB(Min)

100% Tested for Load Mismatch at all Phase Angles with

30:1 VSWR

STYLEI
PIN 1.
2.
3
4

EMITTER
BASE
EMITTER
COLLECTOR

MAXIMUM RATINGS
Rating

Symbol

Value

Collector-Emitter Voltage

VCEO

Vdc

Collector-Bats Voltage

vCBO

Vdc

Emitter-Base Voltage

vEBO

3.0

Vdc

Adc

Collector Current Continuous

Withstanding Current 10 s

Total Device Dissipation @Tc " 25C

Derate above 25C

Storage Temperature Range

Tstg

Unit

Adc

290

Watts

1.66

W/C

-65 to +150

NOTES

1 DIMENSIONING ANDT0LERANONGPER
ANSIYI4SM. 1382
2 CONTROLLING DIMENSION INCH

MRF422MP is for ordering a HFE matched pair.

MILLIMETERS
MIN
MAX
2514

0960

0990

1182

1295

0465

0510

582

698
596

0229

0216

0235

0084
0144

0110

279
452

008

017

0003
0435

24J9

549
214

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Symbol

RflJC

Max

0.6

Unit

C/W

11.05
M

4S" NOM

293

330

675

647

1829

18.54

MCHES

MM 1 MAX

2-616

0178
0007
_

45" NOM
0115
0.130
0246
0255
0720
0730

CASE 211-11

MOTOROLA RF DEVICE DATA

0275

MRF422, MRF422MP

ELECTRICAL CHARACTERISTICS (Tc = 25C unlessotherwise noted.)

Characteristic

Typ

Symbol

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

V(BR)CEO

V(BR)CES

V(BR)CBO

v(BR)EBO

3.0

<lc-200 mAdc. IB=0>

Collector-Emitter Breakdown Voltage

Vdc

<lc = 100 mAdc, Vbe = 0)

Collector-Base Breakdown Voltage

Vdc

(lc 100 mAdc, lE=0)

Emitter-Bass Breakdown Voltage

Vdc

(lE- 10mAdc, lc = 0)
Collector Cutoff Current

>CES

mAdc

(VCe = 28Vdc, Vbe = 0, TC- 25C)

ON CHARACTERISTICS
DC Current Gain

420

hFE

(lC = 5.0 Adc. VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

(VCB " 28 Vdc, 1 = 0. f - 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

Gpe

(VCc = 28 Vdc, Pout - 150 W(PEP).lC(max) = 6-7 Adc,

ICQ= 150 mAdc, f = 30, 30.001 MHz)
Collector Efficiency

IVCc = 28 Vdc. Pout = 150 W(PEP). lC(max) = 6.7 Adc.

CQ= 150 mAdc, f - 30, 30.001 MHz)

-33

IMD

Intermodulation Distortion (1)

-30

Watts PEP

(Vce = 28 Vdc, Pout = 150 Watts(PEP), lc = 6.7 Adc.

ICQ = 150 mAdc, f = 30, 30.001 MHz)
Output Power

150

pout

(VCe = 28 Vdc, f = 30 MHz)

(1) To Mil-Std-1311 Version A, Test Method 2204, Two Tone, Reference each Tone.

FIGURE 1 -

30 MHz TEST CIRCUIT SCHEMATIC

+ pO-AVv
I*

CR1X

-t

*HHHH>

x
r -?pC9
r
^CC8

^C6 7KC7

CIO
/pblU

I<+
5fcci11
28 Vdc
<-TX*-l

-<
3sCi

C1,2,3,5
C4

C6.8.11
C7
C9
C10

R2< ^nf

170-680 pF, ARCO 469

80-480 pF, ARCO 466
ERIE 0.1 pF. 100 V
MALLORY 500 pF. 15 V
Electrolytic
UNDERWOOD 1000 pF. 350 V
10 pF. 50 V Electrolytic

10 n, 25 Wan Wire Wound

10 n. 1 Watt Carbon
1N4997

CR1

jsi

LI 3 Turns, #16 Wire, 5/16" I.D., S/16" Long

L2 10 mH Molded Choke
L3 12 Turns, #16 Enamaled Wire, Close Wound,
1/4" Oia.

L4 5 turns, 1/8" Copper Tubing

LS 10 Ferrite Beads FERROXCUBE #56-590-65/
3B

MOTOROLA RF DEVICE DATA

2-617

MRF422, MRF422MP

FIGURE 2 - OUTPUT POWER versus INPUT POWER

FIGURE 3 - POWER GAIN versus FREQUENCY

ICQ* 150 mA
TOO TONE TEST:
'

^s
^S

y
.

y
Vce " 28 V
ICQ= 150 mA
Poul " ' 50 W PEP

4.0

6.0

8.0

3.0

5.0

Pin. INPUTPOWER (WATTS PEP)

7.0

(.FREQUENCY (MHz)

FIGURE 4 - LINEAR OUTPUT POWER

FIGURE S - INTERMODULATION DISTORTION

versus SUPPLY VOLTAGE

versus OUTPUT POWER

1 1 1 1
!MO'30dB

'CO 25 mA

ICO 150 mA

3 J.JU UUI WHZ

1 in .in 0(11 MHr

200

g '60
s

3rd ORDER

"""""si iORD!

Vce.SUPPLY VOLTACE(VOLTS)

FIGURE 6 -

x
<

120

160

i^i

FIGURE 7 - SERIES INPUT IMPEDANCE

":::

\ Tc*25C
^
::::

t<r

1 -0

-feH=H!!

::::

Pout. OUTPUT POWER (WATTS PEP)

DC SAFE OPERATING AREA

s: 20

2.0

o
tj

Frequency

0.8

2.0

5.0

VCE,COLLECTOR EMITTER VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-618

Zir.

MHi

Ohms

30
15
7
2

0.81 -jO.26
1.32 -(0.38
2.10 -1033
4.30 -jl.54

MRF422, MRF422MP

FIGURE 9 - OUTPUT CAPACITANCE

versus FREQUENCY

FIGURE 8 - OUTPUT RESISTANCE versus FREQUENCY

5.0

t_8.0

4.0

56.0
<4.0

win 2.0

2
Vce-28 V

Vec-28 V
ICQ- 150mA
Pout 150WPEP

,5 2.0

5.0

7.0

ICQ-150mA
Pout-'50WPEP

5.0

7.0

I.FREQUENCY(MHi)

I. FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-619

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF426

The RF Line
25 W (PEP)-30 MHz

RF POWER
TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON

... designed for high gain driver and output linear amplifier stages
in 1.5 to 30 MHz HF/SSB equipment.

Specified 28 Volt, 30 MHz Characteristics Output Power = 25 W (PEP)

Minimum Gain - 22 dB

Efficiency = 35%

Intermodulation Distortion @ 25 W (PEP) IMD = -30 dB (Max)

100%Tested for Load Mismatch at All PhaseAngles

With 30:1 VSWR

Class A and AB Characterization

BLX 13 Equivalent

STYLE 1:
PIN 1. EMITTER
2. BASE
1 EMITTER
4. COLLECTOR

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Vdc

Collector-Base Voltage

vCEO
Vcbo

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

Adc

6.0

Adc

Collector-Emitter Voltage

Collector Current Continuous

Withstand Current - S s

Total Device Dissipation @Tq " 25C (1)

Derate above 25C

Storage Temperature Range

Tstg

Watts

0.4

W/C

-65 to+180

NOTES:

1. DIMENSIONING ANDT0LERANCING PER

ANSI Y14.5M. 1982.
2. CONTROLLING DIMENSION: INCH.

MHUMETERS
mm
MAX
2439
25.14

9.(0

5.82

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

547

930

7.13
536

INCHES
MM

MAX

0360
0.370

0990

0229

0.390
0281

0215
003$

0235

2ES

4.57

0.150

0.180

Symbol

Max

Unit

2.16
181

RfljC

CAV

0.11

0.15

0004

0.006

0.395

0405

(1)This device is designed for RFoperation. The total device dissipation rating applies
only when the device is operated as an RF amplifier.

10.04

1023

40*

50"

2sa

623

3.30
647

0.113
0J45

0.255

S
u

20.07

2057
1854

0.790

0.810

0.720

0.730

1829

CASE 211-07

MOTOROLA RF DEVICE DATA

2-620

0.105

0.130

MRF426
ELECTRICAL CHARACTERISTICS (Tc * 25C unless otherwise noted)

Symbol

Characteristic

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CE0

V(BR)CBO

V(BR)EB0

4.0

Vdc

(lC* 50 mAdc, Ir, - 0)

Collector-Base Breakdown Voltage

Vdc

(lC* 50 mAdc, lg -0)

Emitter-Base Breakdown Voltage

Vdc

(lE= 10 mAdc. lc-0)

Collector Cutoff Current

'CES

mAdc

(VCE 28 Vdc, VBE - 0)

ON CHARACTERISTICS
OC Current Gain

"FE

(lC * 1 0 Adc, VCE - 5.0 Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB-30Vdc, Ig

Cob

0, f = 1.0 MHz)

FUNCTIONAL TESTS (SSB)

Common-Emitter Amplifier Gain

Gpe

(VCc " 28 Vdc, Pout - 25 W (PEP), f1 = 30 MHz,

f2 - 30.001 MHz, lCQ = 25 mA)
Collector Efficiency

(VCC 28 Vdc. Pout - 25 W (PEP), f1 - 30 MHz,

f2 - 30.001 MHz, lCQ = 25 mA)
Intermodulation Distortion (1)

MD(d3)

-30

-35

(VCC " 28 Vdc, Pout - 25 W (PEP), f1 = 30 MHz.

f2 - 30.001 MHz, ICq = 25 mA)
Load Mismatch

No Degradation in Output Power

(Vce " 28 Vdc, Pout - 25 W (PEP), f1 - 30 MHz.

12 - 30.001 MHz. ICQ = 25 mA, VSWR 30:1 at All Phase Angles
CLASS A PERFORMANCE

I Intermodulation Distortion (1) and Power Gain

GpE
IMD(d3)
'MD(d5)

(VCc 28 Vdc, Pout - 8 W (PEP), f1 = 30 MHz,

f2 =30.001 MHz. ICQ =12Adc)

23.5

-40

-55

(1) To MIL-STD-1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
FIGURE 1 -30 MHz LINEAR TEST CIRCUIT

*o(EXD-CD

05~x?
C1.C2 -

ARCO 469.

3 Turn, l6 0 IB" tO

C3. C4 -

ARCO 464 26260 pF

6 Turns 16 0.6" IO

120 pF Olppod Mm

leOJBOpF

C6. C7 -

100 uF IS Vdc

680 pF F.T. Alton Bradley

I.OliF 39 V Tantalum

IN4SS7

CR1

Adjutt Bias (Basil for Icq - 20 mA w

7 Tumi 20 0.36" IO

10 uH Moldad Choa Otltven

RFC1

Farroacuba VK2O0/20-4B

RFC2

SFarroacub* 9683066-36

Input/Output Connectors UQ83 A/u

10U 1/3 Watt I OX

i No RF Appllad

MOTOROLA RF DEVICE DATA

2-621

-^ RF Output

MRF426
FIGURE 2 - OUTPUT POWER versus INPUT POWER

FIGURE 3 - OUTPUT POWER versus SUPPLY VOLTAGE

1- 30.0 MI <i

'C(l"25m A
VC c-a\lit

lCQ 25mA

/
40

Pi. INPUT POWER (mW)

Vce SUPPLY VOLTAGE (VOLTS)

FIGURE 5 -

FIGURE 4 - POWER GAIN versus FREQUENCY

INTERMODULATION DISTORTION

versus OUTPUT POWER

d3 -

""V.
""5-

vCc- 23 V
'CO' !5mA
pout" 25WP

1.5

2.0

3.0

f-30.30.001 MHi

'CO 25 mA
VCC28 V

5.0

7.0

(.FREQUENCY (MHi)

FIGURE 6 - DC SAFE OPERATING AREA

5.0

75
a.

9
<
I

1.0

Tr 25

CE
DZ

3
U

(15

0
u

0 25
0

_tj

Pout.OUTPUT POWER (WATTS PEP)

0.1

0.05

2.0

5.0

VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-622

MRF426
FIGURE 8 - OUTPUT RESISTANCE versus FREQUENCY

FIGURE 7 - OUTPUT CAPACITANCE versus FREQUENCY

2500

vcc 28
>ca 25
P0u

vCc 28 V
>ca 25 mA
P0U1 25WPEP

V
mA

3" 15
""Ss

-<y.
; 51000

500

5.0

7.0

5.0

7.0

I. FREQUENCY (MHi)

I. FREQUENCY (MHr)

FIGURE 9 - SERIES EQUIVALENT INPUT IMPEDANCE

MOTOROLA RF DEVICE DATA

2-623

MOTOROLA

SEMICONDUCTOR

MRF427

TECHNICAL DATA

MRF427A
The RF Line
25 W (PEP) -30 MHz

RF POWER
TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
NPN SILICON

. . . designed primarily for high-voltage applications as a high-power

linear amplifier from 2.0 to 30 MHz. Ideal for marine and base sta
tion equipment.

Specified 50 Volt, 30 MHz Characteristics Output Power = 25 W(PEP)

Minimum Gain = 18 dB

Intermodulation Distortion @ 25 W(PEP) -

100% Tested for Load Mismatch at all Phase Angles with 30:1

IMD= -34 dB (Min)

VSWR

MAXIMUM RATINGS
Symbol

Value

Unit

Collector-Emitter Voltage

VcEO

Vdc

Collector-Base Voltage

vCBO

110

V.1-:

Emitter-Base Voltage

vEBO

4.0

Vdc

Raring

Collector Current

Continuous

Total Device Dissipation 0?Tfj - 25C

6.0

Adc

Watts

0.457

W/C

T$tg

-65 to +150

Symbol

Mix

Unit

Rojc

2.19

C/W

Derate above 25C

Storage Temperature Range

THERMAL CHARACTERISTICS

STYLE I:

Characteristic

Thermal Resistance. Junction to Case

STYLE 1

CASE 211-11

PIN 1 EMITTER

2 BASE
3 EMITTER

PIN I. EMITTER
2. BASE
3. EMITTER
4 COLLECTOR

NOTES
1 DIMENSIONINGAND T0LERANONG

NOTES

1 DIMENSIONINGAND T0LERANDNG PER

ANSIYU5M. 1962

PER ANSI Y14 5M. 1982.

2. CONTROLLING DIMENSION: INCH.

2 controlling dimension inch

4 COLLECTOR
M LUMETERS

MILLIMETERS
DM

MIN

Mil

Hi- -MS&!.

582

698

549

596

214

2X9

366

4 52

1105
M

;;

INC <ES
MAX

MIN

0950

OSM

MAX

M.N

1245

1295

:;>:

0.510

1054

1080

: IV

0425

2273
597

0895

0215

0235

1968

546

183

K
I

M
P

'. ~
: ;::

'.:v

:::: ' :: ;

45 NOM

293 1 330

0115

0130

R
U

625

647

0246

::::

1829 1 1354

0720

0 733

ACHES

DIM

008
12 45

0.18

1.65
1.90
45" NOM

127

0072

0003
0490

2-624

0007

0075
0065
45 NOM
-

0050

973

1006

0383

0396

384

450

0151

0177

211

254

249

335

0083
0.098

0100
0132

CASE 145A-10

MOTOROLA RF DEVICE DATA

MAX

MRF427, MRF427A
ELECTRICAL CHARACTERISTICS <TC-25C unless otherwise noted.)
Characteristic

| Symbol |

Min

V(BR|CE0

V(BRICES

110

V(BR)CB0

110

V(BR)EBO

4.0

| Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

IIC 200 mAdc. IB =0)

Collector-Emitter Breakdown Voltage

(lC 100 mAdc, VBE =0)

Collector-Base Breakdown Voltsge

Vdc

lie * 100 mAdc, lg =0)

Emitter-Base Breakdown Voltage

- 10 mAdc, lc =0)

Vdc

ON CHARACTERISTICS

DC Current Gain

"FE

(lC 500 mAdc, VCE =5.0 Vdc)

OYNAMIC CHARACTERISTICS

Output Capacitance

C0D

(VCB 50 Vdc. Ig - 0. f - 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

Gpe

(VCC ' 50 Vdc. Pout = 25 W(PEP), 1 =30 MHz)

Intermodulation Distortion (1)

IMD

(Vce = 50 Vdc, P0ut = 25 W(PEP))

-37

-34

Electrical Ruggedness

(Vce " 50 Vdc. Pout = 25 W(PEP).f 30 MHz,

VSWR 30:11

No Degradation in Output Power

All Phase Angles

(1) To Mil-Std-1311 Version A, Test Method 2204B. Two Tone, Reference each Tone.
FIGURE 1-30 MHz TEST CIRCUIT SCHEMATIC

RFC3
-O

TC7 PpCB

?pC9 ?fcC10 Vdc

RF Input >

C1.C2.C6

ARCO 469 Trlmmor

500 uF. 3 Vdc Capacitor

C4.C7.C10

0.1 uF ERIE REDCAP

RFC1

1 pH Molded Choko

ARCO 463 Trimmer

RFC2

1000 pF. UNELCO Capacitor

47 (iF. 50 Vdc Capacitor
20 n. S Watt Resistor
ion. '/. Watt Rstlttor

20 Turns. t>20 AWG. Enameled Wire

on 390 n, 1 Watt Resistor

RFC3

VK 200-4B FERROXCUBE Choke

C9
HI
R2

0.15 pH Inductor
0.3 (lH Inductor
1N4997

MOTOROLA RF DEVICE DATA

2-625

RF Output

ii (-

MRF427, MRF427A

FIGURE 3 - POWER GAIN versus FREQUENCY

FIGURE 2 - OUTPUT POWER versus INPUT POWER

1
1 = 30 MHi

lCQ 4

vy!

30
I

28 V

25
3

lCQ -40 mA

0.2

0.4

5.0

pin. input power iwatts)

FIGURE 4 -

FIGURE 5 -

INTERMODULATION DISTORTION versus

OUTPUT POWER

Vce 40 Vdc

Vce " so Vdc

-30

icq 40 mA

'CO* 40 mA
30.30.00

z
o

INTERMODULATION DISTORTION versus

OUTPUT POWER

_ -30

7.0

(.FREQUENCY (MHi)

z
o

-35

o= -35

a
z
o

3rd Irdti

1-40
4
3

5th

Jider

V^iil Ordir

S-45

5th Order
1

-50

-so

FIGURE 7 - OUTPUT CAPACITANCE versus FREQUENCY

FIGURE 6 - OUTPUT RESISTANCE versus FREQUENCY

100

1000

soo

:|80

VCC'SOV
ICO " *" mA

P0U,.25WPEP

t- _
Z

YCC = 50V
CQ 40mA

BOO

< ui 700
2 z

. ui

IS 60

i <

il *

-j <

5
3

: 30

= 3

< 200

= 20
10

5.0

7.0

Poul.OUTPUT POWER WATTS PEP)

Poul. OUTPUT POWER (WATTS PEP)

'1 70

5.0

7.0

f. FREQUENCY(MH{>

I. FREQUENCY (MHr)

MOTOROLA RF DEVICE DATA

2-626

MRF427, MRF427A

FIGURE 9 - DC SAFE OPERATING AREA

FIGURE 8 - OUTPUT POWER versus SUPPLY VOLTAGE

FHH

7.0

- ICQ 40 mA
1 30.30.0011(Hi

s: 5.0

40
<

5 2.0

25C v

"^IMD* -35 dB

* w

0.5

10
0.2
0.1

1.0

VCC.SUPPLYVOLTAGE(VOLTS)

2.0

3.0

5.0

Vce. COLLECTOR EMITTER VOLTAGE (VOLTS)

FIGURE 10 - SERIES EQUIVALENT IMPEDANCE

MOTOROLA RF DEVICE DATA

2-627

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF428

The RF Line
150 W (PEP) - 30 MHz

RF POWER
TRANSISTOR
NPN SILICON

NPN SILICON RF POWER TRANSISTOR

. . . designed primarily for high-voltage applications as a high-power

linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station
equipment.

Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W(PEP)

Minimum Gain = 13 dB

Efficiency = 45%

Intermodulation Distortion @ 150 W (PEP)

IMD = -3QdB(Max)
100% Tested for Load Mismatch at all Phase Angles with

STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. C01UCT0R

30:1 VSWR

MAXIMUM RATINGS
Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

110

Vdc

VebO

4.0

Vdc

Rating

Emitter-Base Voltage
Collector Current - Continuous
Withstand Current -10 s

Total Device Dissipation @Tc = 25C

>C
-

Derate above 25C

Storage Temperature Range

Tstg

Adc

320

Watts

1.83

W/C

-65to+150

NOTES
1. DIMENSIONINGAND T01ERANCING PER

ANSIY14.5M, 1S82.
2 CONTROLLINGDIMENSION: INCH.

MLUMETERS
MM
MAX
2514

2*33

0.510

0229

0275

549

596

0218

0235

214

279

0034

0110

452
366
017
003
1105
45* NOM

0.144

0178

0003

0007

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

RfljC

0.5

c/w

Q
R
U

0990

12.95
693

0465

582

1182

THERMAL CHARACTERISTICS

INCHES
MW
MAX
0960

293

0435
45 NOM
_

330

0.115

0.130

G2S

647

0246

tS29

1854

0720

02S5
0.730

CASE 211-11

MOTOROLA RF DEVICE DATA

2-628

MRF428
ELECTRICAL CHARACTERISTICS^ - 25C unless otherwise noted.)
|

Characteristic '

- ' '

Symbol

Min

V(BR)CEO

V(BR)CES

110

V(BR)CBO

110

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

(IC= 200 mAdc. In. = 0)

Collector-Emitter Breakdown Voltage

Vdc

(lC- 100 mAdc, VBE0)

Collector-Base Breakdown Voltage ' :

(lc- 100mAdc, lc. =0)

Vdc
"

Emitter-Base Breakdown Voltage

V(BR)EBO

4.0

hFE

tlE-10 mAdc, lc= 0)

Vdc

ON CHARACTERISTICS
DC Current Gain -

(lC=5.0'Adc,VcE " 5.0Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

cob

200

250

IVCB " 50 Vdc. Ie 0, f - 1.0 MHz)

FUNCTIONAL TESTS

1Common-Emitter Amplifier Gain

1 IVCC 50 Vdc,Pour 150W (PEP) lc<max) 3.32 Adc.

pout

150

f- 30 MHz)

[Output Power _._"-i.-_.:

1 , (Vce * sovac. f 30 mh*i
ICollector Efficiency
1 (VCc " 50 Vdc. Pout - 150 Wi(PEPI, lcmaxl =3.32 Adc,
f-30 MHz)

' r

Intermodufarion Distortion (1)

IMD

-33

-30

{VC = 50 Vdc, Pout =/50 W (PEP), lC - 3.32 Arte)

Electrical Ruggedness

(VCc ' 50 V-fc. Pout = 150 W (PEP), lc(max) =3.32 Adc.

No Degradation in Output Power

f = 30 MHz),

VSWR 30:1 at all Phase Angles

(1 Vto Mil Std 1311 Version A. Test Method 2204B, Two Tone. Reference Each Tone.

FIGURE 1-30 MHz TEST CIRCUIT SCHEMATIC

. R1

*>WV
Bias

HHHHHh

mr
T

- >C2

RF >-

7>ci

C1.C2.C7
C3.C8.C9
C4
CS
C6
C10
R1

LI
./"WW.

1"
C9 ^C10 SO Vdc

Input

WPEP

R2<

C-

J]#<

C7 n^

D.U.T.

ion, 1 Watt

170-780 pF, ARCO 461.

0.1 UF, 100 V ERIE
500 pF 6 V
9.0 160 pF. ARCO 463
80-480 pF, ARCO 466
30MF. 100 V
1012. 10 Watt

1N4997

3 Turns. #16 Wire, 5/16" I.D., 5/16" Long

10 uH Molded Choke

12 Turns. #16 Enameled Wiro Closowound, 1/4" I.D.

5 Turns, 1/8" Copper Tubing, 9/16" I.D., 3/4" Lone
10 Forrito Beads -

MOTOROLA RF DEVICE DATA

2-629

FERROXCUBE #56-590-65/30

MRF428
FIGURE 3 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 2 - OUTPUT POWER versus INPUT POWER

300

250

1-30.30.00! MHz,

30.0 MHt

250

ica > 150 mA

VCC-50V

200

IMD -30dB

.x1

150

too

$\
V
A

40 V

IMD -35 dB

1
28 V

4.0

6.0

8.0

Vce, SUPPLY VOLTAGE (VOLTS)

Pin. INPUTPOWER(WATTS)

FIGURE 5 - DC SAFE OPERATING AREA

FIGURE 4 - POWER GAIN versus FREQUENCY

lCQ * 150 mA

1
10

3.0

9.U

7.0

2.0

5.0

Vce.COLLECTOR EMITTER VOLTAGE (VOLTS)

f. FREQUENCY(MHi)

INTERMODULATION DISTORTION versus OUTPUT POWER

FIGURE 7 - Vcc - 50 Vdc

FIGURE 6 - VCc - 40 Vdc

_ -25

3
z

i- -30
cc

^Snll

rdtr

3rd( R0ER

hi
-*
o
ICQ" 50 mA
f- SO, 30.001 MHt

-45

5th ( RDER

CC
UJ

-*0

150 JlA

(-30,: 0.001 MHz

a*
3

-50

~ -50
40

tOO

120

140

120

160

Pout. OUTPUT POWER (WATTS PEP)

Pout OUTPUT POWE R WATTSPEP)

MOTOROLA RF DEVICE DATA

2-630

160

PCARoLut.COUATP

MRF428

FIGURE 8 - OUTPUT CAPACITANCE versus FREQUENCY

5000

FIGURE 9 - OUTPUT RESISTANCE versus FREQUENCY

11
tea
"out

Vce 50 V

150 mA
150WPEP

jtJG

il
din 10

0
1.5

2.0

3.0

5.0

7.0

Pout

5.0

7.0

f. FREQUENCY(MHi)

f. FREQUENCY (MHi)

FIGURE 10-SERIESEQUIVALENT IMPEDANCE

MOTOROLA RF DEVICE DATA

2-631

150 mA
>150WPEP

MOTOROLA

SEMICONDUCTOR

MRF429
MRF429MP

TECHNICAL DATA

The RF Line
150 W (LINEAR)

30 MHz

RF POWER
TRANSISTORS
NPN SILICON

NPN SILICON RF POWER TRANSISTORS

... designed primarily for high-voltage applications as a highpower linear amplifier from 2.0 to 30 MHz. Ideal for marine and
base station equipment.
Specified SO Volt, 30 MHz Characteristics
Output Power = 150W(PEP)
Minimum Gain =

13 dB

Efficiency = 45%
Intermodulation Distortion (a 150 W(PEP)
IMD = -32dB(Max)

Diffused Emitter Resistors for Superior Ruggedness

100% Tested for Load Mismatch at all Phase Angles with 30:1
VSWR<& 150 WCW

STYLE 1:
P1N1. EMITTER
2. BASE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

100

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

Adc

233

Watts

1.33

w/c

Collector Current Continuous

Withstand Current 10 s

Total Device Dissipation fo Tq = 2SC

Tstg

-65 to +150

MRF423MP is for ordering an hct: matched pair.

Thermal Resistance, Junction to Case

2 C0NTROUING DIMENSION: INCH

MUMETERS
UN

MAX

urn

MAX

2439
11.82

0963
0.465

0393

a
c

582

2514
1295
698

549

596

0216

0.235

E
H

2.14

279

0084
0.144

0.110
0.178
0.007

Symbol

Max

Unit

RoJC

0.75

c/w

INCHES

THERMAL CHARACTERISTICS
Characteristic

NOTES
1 DIMENSIONING AND TOIERANONG PER

ANSI Y145M. 1982

Derate above 25C

Storage Temperature Range

j--^^n

M
Q
R
U

366

452

0.08

017

1105
45* NOM
293
330
647
625
1354
1829
_

0229

0.033

2-632

0275

0435
45* NOM
_

0.115

0.133

0246
0.720

0.255
0.730

CASE 211-11

MOTOROLA RF DEVICE DATA

0.510

MRF429, MRF429MP
ELECTRICAL CHARACTERISTICS(TC = 25"C unlessotherwisenoted.)

Typ

Max

Symbol

Min

Collector-Emitter Breakdown Voltage

dC = 200 mAdc, lB = 0)

V(BR)CEO

Vdc

Collector-Emitter Breakdown Voltage

dC = 100 mAdc, Vbe = o)
Collector-Base Breakdown Voltage
dC = 100 mAdc, Ie = 0)

V(BR)CES

100

Vdc

V(BR)CBO

100

Vdc

V(BR)EBO

4.0

Vdc

"FE

220

300

Characteristic

Unit

OFF CHARACTERISTICS

Emitter-Base Breakdown Voltage

(Ig = 10 mAdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain

(lC = 5.0 Adc, Vce = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

(Vcb = 50 Vdc, Ie = 0,f = 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Gain

Gpe

pout
"1

150

W (PEP)

(Vce = 50 Vdc, Pout = 1S0W(PEP)lc(max) = 3.32 Adc,

f = 30; 30.001 MHz)

Output Power

(Vce = 50 Vdc, f = 30; 30.001 MHz)

Collector Efficiency

(Vce = 50 Vdc, P0ut = 150W(PEP), lc(max) = 3.32 Adc,

f = 30; 30.001 MHz)

Intermodulation Distortion (1)

IMD

-35

-32

(Vce = 50 Vdc, Pout => 150 W (PEP), lc = 3.32 Adc)

Electrical Ruggedness

(Vce = 50 Vdc,Pout = 156 W CW,f = 30 MHz,

No Degradation in Output Power

VSWR 30:1 at all Phase Angles)

(DTo Mil Std 1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.

RGURE 1 30 MHz TEST CIRCUIT SCHEMATIC

&
^pCIO 50 Vdc
<RF

Output
Input

C1.C2.C7 170-780 pF, Arco 469

10 0,1 Watt

C3.C8.C9 0.1 iF, 100 V Erie

R3
CR1

5-3.3 fl 1/2 Watt Carbon Resistors in Parallel

1N4997

3 Turns. #16 Wire, 5/16" I.D., 5/16" Long

10 n.H Molded Choke

C4
C5
C6
C10
R1

500 ^F @ 6 V
9.0-180 pF, Arco 463
80-480 pF, Arco 466
30 ilF, 100 V
10 n, 10 Wan

12 Turns, #16 Enameled Wire Closewound, 1/4" I.D.

5 Turns, 1/8*Copper Tubing, 9/16" I.D., 3/4" Long

10 Ferrite Beads Ferroxcube #56-590-65/3B

MOTOROLA RF DEVICE DATA

2-633

MRF429, MRF429MP

RGURE 3 OUTPUT POWER versus SUPPLY VOLTAGE

RGURE 2 OUTPUT POWER versus INPUT POWER

250

1 = 30.30.001MHz
"CO = 150 mA

200

icq = 150mA

sov__

I = SOMKt

IMD =

-30d3

IMD =

-35dB

<>3
5150
28 V

S SO

2.0

4.0

y
30

6.0

Vce. SUPPIV VOLTAGE IVOLTSI

Pin, INPUT TOWER IWATTS)

RGURE 5 RF SAFE OPERATING AREA (SOAR)

RGURE 4 POWER GAIN versus FREQUENCY

...1 = 30.000 Ml r
CO 150m/\

Vce

,, TC = 50C
Vrr

icq =
Pout -

150mA
150W

Tc = iooc
10

4.0

7.0

100

1.0

3.0

5.0

f, FREQUENCY (MHr)

OUTPUTVSWR

RGURE 6 ft versus COLLECTORCURRENT

RGURE 7 IMD versus Pout

Vce = 30V
200

150

a?
a

too

y
y

_V(x =
va

50V

f = 30.30.001 | Oh

<*>

I
1

0
5.0

100

PoutOMTPUT POWER (WATTS PEPI

COLLEaOR CURRENT, lc (AMPS.)

MOTOROLA RF DEVICE DATA

2-634

120

140

160

MRF429, MRF429MP

RGURE 8 OUTPUT CAPACITANCE versus FREQUENCY

5000

RGURE 9 OUTPUT RESISTANCE versus FREQUENCY

VCC = 50V

= 50V
- ICQ = 150mAfoot = 150WP EP

VCC

= 150 mA-

Pout

= 150WPI.P

is n
2000

1000

0
4.0

7.0

4.0

7.0

I. FREQUENCY IMHil

f. FREQUENCY (MHt)

RGURE 10 SERIES EQUIVALENT IMPEDANCE

50V
150 mA
150 W PEP
f

Zin

MHz

Ohms

0.67

0.78

-J0.30

1.10

-J0.70

1.60
2.55
4.20
7.15

-J1.15

7.0
4.0
2.0

MOTOROLA RF DEVICE DATA

2-635

-J0.10

-J1.75
-J2.25
-J2.40

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF430

The RF Line

NPN Silicon
RF Power Transistor
600 WATTS (LINEAR)

... designed primarily for high-voltage applications as a high-power linear amplifier

30 MHz
RF POWER TRANSISTOR

from 2 to 30 MHz. Ideal for marine and base station equipment.

NPN SILICON

Specified 50 Volt, 30 MHz Characteristics

Output Power = 600 W
Minimum Gain = 10 dB

Efficiency = 40%
Intermodulation Distortion <& 600 W(PEP) IMD = -30 dB

Diffused Emitter Resistors for Superior Ruggedness

Low Thermal Resistance

CASE 368-01, STYLE 1

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

110

Vdc

Emitter-Base Voltage

VEBO

Vdc
Adc

Rating

Collector Current Continuous

Operating Junction Temperature

200

875

Watts

W/C

Tstg

-65 to +150

Symbol

Max

UnH

Rwc

0.20

T/W

Typ

Max

Unit

Total Device Dissipation (a Tc = 25C

Derate Above 25"C

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (Tc = 25Cunless otherwise noted)

Characteristic

Symbol

Min

V(BR)CEO

Vdc

VfBRICES

110

Vdc

V(BR)EBO

Vdc

hFE

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC = 500 mAdc, !fj = 0)

Collector-Emitter Breakdown Voltage

(lC = 200 mAdc, VBe = 0)

Emitter-Base Breakdown Voltage

(IE = 20 mAdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain

(lC = 20 Adc, VCe = 10 Vdc)

(continued)

MOTOROLA RF DEVICE DATA

2-636

MRF430

ELECTRICAL CHARACTERISTICS continued (Tc = 25C unless otherwise noted)

Symbol

Characteristic

Min

Typ

Max

Unit

900

1200

DYNAMIC CHARACTERISTICS

Output Capacitance

C0b

(Vcb = 50 Vdc, lg = 0, f = 1 MHz)

FUNCTIONAL TEST

Common-Emitter Amplifier Power Gain

GPE

(Vce = 50 Vdc, Pout = 600 W (CW). f = 30 MHz, lCQ = 600 mA)

Collector Efficiency

(PEP)

Wcc = 50 Vdc,Pout = 600 W, f = 30 MHz, lCQ = 600 mA)

(CW)

Intermodulation Distortion (1)

IMD

-30

(Vce = 50 Vdc, Pout = 600 W (PEP), lCQ = 600 mA. f = 30 MHz)

(1) To Mil Std 1311 Version A. Test Method 2204B, Two Tone, Reference Each Tone.

r,3?pC24 5p

'C307k
1C215fe
11
C227k

1 C18*
.l .l
C19
T

C17?fe
I *T\

V.IB'-TN

Tlk

rn-*/-11-J
riA^UZ^tl3=p
C12=
C13
4= C14^=

ns-Jne-*tl3=p C16^
C15=

0-12 V

11"]*

T I

-i- rc-ifT^r
njc cD 7Fi
to^ C7?p

TT^

3iu

OUTPUT

D.U.T.

cu;

CI, C3, C11 Arco 469 or equivalent

C2 820 pF
C4 330 pF
C5 1000 (iF/3 V Electrolytic
C6, C8. C9. C10. C17. C18, C19 0.1 pF
CI, C22, C23 0.47 pF, RMC Type 2225C or equivalent
C12.C13.C14 470 pF
C15 1000 pF
C16 Two Unencapsulated 1000 pF Mica in Series
C20, C21 0.039 (iF
C24 10 ftF/100 V Electrolytic
D1 1N4997 or equivalent

LI 2 Turns #14 AWG, V4" ID, W Long

L2 Ohmite Z-235 or equivalent
L3, L4 Ferrite Beads, Fair-Rite Products Corp. #2673000801
or equivalent
Tl RF Transformer, 1:25 Impedance Ratio. See Motorola
Application Note AN749, Figure 4 for details. Ferrite
Material: 2 Each, Fair-Rite Product Corp. #2667540001
or equivalent

All capacitors ATC type 100/200 chips or equivalent, unless

otherwise noted.

R1 10 Ohms/10 W
R2 0.1 Ohm/Vi W
R3 2.7 Ohms/2 W

Figure 1. 30 MHz Test Circuit Schematic

MOTOROLA RF DEVICE DATA

2-637

MRF430
TYPICAL CHARACTERISTICS

1000

vcc

800

= 50V-

( = 30 MHi

'CO =

600

lis

600 mA

VCc = ov

400

VCC = 50V
icq = 600 mA
Pout = WW w

200

] j

1.5

6
8
10
I. FREQUENCY (MHi)

Pjn.INPUT POWER (WATTS CW|

Figure 2. Output Power versus Input Power

Figure 3. Power Gain versus Frequency

1
IMD = -30( * y

CO = 600mA

V(X = 50 V

f = 30,30.001MHz

^
400

**"Imd

^
= -35< B

200

300

400

500

Pout. OUTPUT POWER (WATTS PEP)

VCc. SUPPLY VOLTAGE IVOLTSI

Rgure 4. Output Power versus Supply Voltage

Rgure 5. IMD versus Output Power

300

250

vc : = ov

TC = 25T

200

1 150

-
^

vr : = ' 5V

100

1
1

100

f
10

Vc.COLLECTOR-EMITTER VOLTAGE (VOLTS)

lOCOLLECTOR CURRENT (AMPS)

Rgure 6. DC Safe Operating Area

Rgure 7. fj versus Collector Current

MOTOROLA RF DEVICE DATA

2-638

MRF430

VfT- = 50V

to =
rou

si 4

ii
i3

600 mA

S
Pp

n. ^

CP
0
1.5

f. FREQUENCY (MHz)

Rgure 8. Output Resistance and Capacitance

Figure 9. Series Equivalent Input Impedance

versus Frequency

MOUNTING OF HIGH POWER RF

POWER TRANSISTORS

The package of this device is designed for conduction

cooling. It is extremely important to minimize the thermal
resistance between the device flange and the heat
dissipator.
Since the device mounting flange is made of soft cop
per, it may be deformed during various stages of handling
or during transportation. It is recommended that the user

of the flange is approximately 5Cand 10Cunder normal

operating conditions (dissipation 150 W and 300 W
respectively).
The main heat dissipator must be sufficiently large and
have low R# for moderate air velocity, unless liquid cool
ing is employed.

makes a final inspection on this before the device instal

lation. 0.0005" is considered sufficient for the flange

CIRCUIT CONSIDERATIONS

bottom.

becomes critical due to the low impedance levels and

At high power levels (500 W and up), the circuit layout

The same applies to the heat dissipator in the device

mounting area. If copper heatsink is not used, a copper
head spreader is strongly recommended between the de
vice mounting surfaces and the main heatsink. It should
be at least 1/4" thick and extend at least one inch from

the flange edges. A thin layer of thermal compound in all

interfaces is, of course, essential. The recommended

torque on the 4-40 mounting screws should be in the area

of 4-5 Ibs.-inch, and spring type lock washers along with

flat washers are recommended.

For die temperature calculations, the A temperature

from a corner mounting screw area to the bottom center

high RF currents associated with the output matching.

Some of the components, such as capacitors and induc
tors must also withstand these currents. The component

losses are directly proportional to the operating fre

quency. The manufacturers specifications on capacitor
ratings should be consulted on these aspects prior to
design.
Push-pull circuits are less critical in general, since the
ground referenced RF loops are practically eliminated,
and the impedance levels are higher for a given power
output. High power broadband transformers are also eas
ier to design than comparable LC matching networks.

MOTOROLA RF DEVICE DATA

2-639

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF433

The RF Line
12.5 W (PEP)-30 MHz
RF POWER
TRANSISTOR

SILICON RF POWER TRANSISTORS

. . . designed primarily for application as complementary symmetry
amplifiers in linear amplifiers from 2.0 to 30 MHz.

NPN SILICON

Specified 12.5 Volt, 30 MHz Characterisitcs Output Power = 12.5 W (PEP)

Minimum Gain = 20 dB

Efficiency = 50%

Intermodulation Distortion @ 12.5 W (PEP) IMD"-30 dB (Max)

STYLE 1

PIN 1. EMITTER
2 BASE
3 EMITTER
4 COLLECTOR

MAXIMUM RATINGS
Rating

Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Bate Voltage
Collector Current - Continuous

Total Device Dissipation @Tc 25C

Symbol

Value

Unit

vCEO
VCBO
vEBO

Vdc

4.0

Vdc

2.5

Adc

Watts

114

W/C

Tstg

-65 to +150

Derate above 25C

Storage Temperature Range

NOTES

1 DIMENSIONING AND TOLERANONG PER

ANSI YUSM. 1932
2 CONTROLLINGDIMENSION: INCH
MILLIMETERS
DM

INCHES

MAX

2439

2514

0960

0990

940

990

0370

0390

582
547

713
596

0229
0.215

0235

216

266

0085

0105
0180
0006
0405
50"
0130

381

457

0150

011
1004

015

0004

1023

40"

0
R

2SS

330
647
2057
18.54

0113

673
2007

1829

0395

0.245

2-640

0255

0790

0810

0720

0730

CASE 211-07

MOTOROLA RF DEVICE DATA

0281

MRF433
ELECTRICAL CHARACTERISTICS !Tn 25C unless otherwise noted.)

| Symbol

Characteristic

Max

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V|BH|CE0

V(BR)CES

V(BR)EB0

4.0

Vdc

llc = 20mAdc, lB = 0)
1Collector-Emitter Breakdown Voltage

Vdc

ItC 10 mAdc, Vbe "01

Emitter-Base Breakdown Voltage

Vdc

(IE 2.0 mAdc, lc - 0)

Collector Cutoff Current

'CES

(VCE =16 Vdc. VBE =6,TC =55C)

Collector Cutoff Current

'CBO

8.0

mAdc

0.5

mAdc

(Vcb = 15Vdc, Ie'-0)

ON CHARACTERISTICS
DC Current Gain

hpE

dc - 0.5 Adc vce = 5- Vdc>

DYNAMIC CHARACTERISTICS

C0b

Output Capacitance

120

(Vcb ='5 Vdc, lE - 0, f = 1.0 MHzl

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain'1'

Gpe

<1l

n2l

(VCc " 12.5 Vdc. Pout = 12.5 W (PEP),

lCQ " TOO mAdc, f - 30,30.001 MHz)
Collector Efficiency

(VCc - 12.5 Vdc, Pout - 12.5 W (PEP)

(f - 30.30.001 MHz)
dB

-30

Intermodulation Distortion^'
(Vce = 12.5 Vdc, Pout = 12.5 W (PEP),
ICO = 100 mAdc, f = 30, 30.001 MHz)

IMD

Series Equivalent Input Impedance

Zin

2.50-J2.2O

Ohms

Zout

4.80-J3.00

Ohms

(VCC- 12.5 Vdc, Pout = 12.5 W (PEP).

lCQ " 100 mAdc, f - 30,30.001 MHz)
Series Equivalent Output Impedance

(Vce = 12.5 Vdc. Pout - 12.5W (PEP).

lCQ " 100 mAdc, f - 30,30.001 MHz)
(1) Class AB
(21 Class A

(3) To Mil-Std-1311 Version A, Test Method 2204B, Two Tone, Reference each Tone
FIGURE 1 - 30 MHz TEST CIRCUIT SCHEMATIC

Bias
2-10 V

I"
L3

< L4

Tr: C8

D.U.T.

Input

icio

SR5

1C11

>R6

7fZ C9

-*?-

Output

?<'
C1.C2.C4 170-780 pF. ARCO 469

C3
C5.C6

25-280 pF. ARCO 464

SOOuF. 3 V. ELECTROLYTIC

R3.R4

C7.C9
C8
C10.C11

0.1 pF, Disc Coromic

ion, 1/2 Wott

1000 pF Disc Ceramic

100 )iF. 15 V, ELECTROLYTIC

RS.R6
CR1.CR2
L1
L2

10 n. 5 Watt
1 kn. 1/4 Watt
10 kn. 1/4 Watt

10 pH Molded Choke
15 Turns. #24 AWG Enamalad Wire.
Closewound on a 100 II, 1 Watt

1N4001

Carbon Resistor.

3Tu rn.

#18 AWO. 1/4" I.D., 3/16" Long

3Tu rns. #16 AWG. 3/8" I.D.. 1/4" Long

MOTOROLA RF DEVICE DATA

2-641

FERROXCUBE VK200 -

20/4B

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

IYIRF448

The RF Line
250 W 30 MHz

RF POWER

TRANSISTOR
NPN SILICON

NPN SILICON RF POWER TRANSISTOR

... designed primarily for high-voltage applications as a high-power

linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station
equipment.

Specified 50 Volt. 30 MHz Characteristics

Output Power = 250 W
Minimum Gain = 12 dB

Efficiency = 45%

Intermodulation Distortion @ 250 W (PEP)

IMD = -30dB(Max)

100% Tested for Load Mismatch at all Phase Angles with

3:1 VSWR
STYLE 1:
PIN 1.
2
3
4

EMITTER
BASE
EMITTER
COLLECTOR

MAXIMUM RATINGS

Symbol

Value

Unit

VCE0

Vdc

Collector-Base Voltage

VcBO

100

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

Adc

Rating
Collector-Emitter Voltage

Collector Current Continuous

Withstand Current 10 s

Total Device Dissipation <> Tc = 25C (1)

Derate Above 25C

Storage Temperature Range

Tstg

Adc

290

Watts

1.67

W/C

-65 to +150

NOTES:
1 DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M. 1982.

2 CONTROLLING DIMENSION:INCH.
MUMETBIS
DIM
A
B

C
D

E
H

THERMAL CHARACTERISTICS

J
K
M

Symbol

Max

Unit

Rgjc

0.6

"C/W

Q
ft

(1) Pp is a measurement reflectingshortterm maximumcondition. See SOARcurve foroperating

Characteristic

Thermal Resistance, Junction toCase

noKES
MAX
0990

Mm
2433

MAX
25.14

1182

12.95

0.465

582
549

6.98

0229

0510
0.275

5.96

0.216

0235

279

MN
0960

214
386

0034

0.110

4.52

0.144

0.178

008

017

0007
0.435
45* NOM
0.115
0.130
0246
0.255
0.720
0.730

1105
45* NOM

2.93
6JS

3.30
647

1329 1 1854

0.003

conditions.

CASE 211-11

MOTOROLA RF DEVICE DATA

2-642

MRF448
ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted)
Characteristic

Symbol

Min

v(BR)CEO

V(BH)CES

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

100

Vdc

v(BR)CBO

100

Vdc

V(BR)EB0

4.0

Vdc

hFE

cob

GPE

dC = 200 mAdc. Iq = 0)
Collector-Emitter Breakdown Voltage

0C= 100 mAdc, VBE= 0)

Collector-Base Breakdown Voltage

dC= 100 mAdc, lg = 0)

Emitter-Base Breakdown Voltage

(lE=10mAdc. lc = 0)
ON CHARACTERISTICS
DC Current Gain

(lC = 5.0 Adc. Vce = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

350

450

(VCb = 50 Vdc. Ie = 0. f ~ 1.0 MHz)

FUNCTIONAL TEST

Common-Emitter Amplifier Power Gain

(Vcc = 50Vdc.Pout=25OWCW.f=30MHz.lCQ=25OmA)
Collector Efficiency

(Vce = 5 v<fc- Pout = 250 W, 1= 30 MHz. ICQ= 250 mA)

% (PEP)
%(CW)

Intermodulation Distortion (1)

IMD

-33

-30

(Vce =50Vdc. Poul= 250W(PEP). lCQ=250mA.f = 30MHz)

Electrical Ruggedness

(VCc = 50 Vdc. P00, = 250 W CW.

No Degradation in Output Power

f=30MHz.

VSWR 3:1 at all Phase Angles)

(1) To Mil-Std-1311 Version A, Test Method 2204B, Two Tone, Reference each Tone.

FIGURE 1 -

30 MHz TEST CIRCUIT SCHEMATIC

+}WVBias

;r^

C3 7K C4>rx

Input

>-e ci 5^

!fCR1

C8
L2

/p_ C\Or\%
CIO/TN

R2;

50Vdc

-nnnrv^L.

-X-

CI, C2, C5, C7 170-780 pF, Arco 469

C3. C8. C9 0.1 pF, 100 V Erie
C4 500 MF@ 6.0 V
C6 360 pF, 3 * 120 pF 3.0 kV in parallel
CIO IOjiF.IXV
R1 10 0,10 Watt
R210n. 1 Watt

X-E3

en,fi

BHt

_/ RF

Output

C7^n

C5
C6

CR1 1N4997 or equivalent

LI 3 Turns, ff16 Wire, 0.4 - I.D., 0.3 - Long

L2 0.8 pH. Ohmite Z-235 or equivalent

L3 12 Turns, #16 Enameled Wire Closewound 0.25' I.D.

L4 4 Turns, 1/8" Copper Tubing. 0.6" I.D., 1.0" Long

LS, L6 2.0 pH, Fair-Rite 2643021801 Ferrite bead each or equivalent.

MOTOROLA RF DEVICE DATA

2-643

MRF448

FIGURE 2 -

OUTPUT POWER versus INPUT POWER

FIGURE 3 400

400

1 = 30 MH

Icq =

OUTPUT POWER versus SUPPLY VOLTAGE

1 ! '

1 = 30.. 30.001 MH>

250 mA

IM0 = -30 <&^*

lCQ = 250 mA

SOV

300

300 -

Tmo =-35 dB

40V

S 200

100

8.0

Pin.INPUT POWEH (WATTS)

Vqc.SUPPLY VOLTAGE (VOLTS)

FIGURE 5 - RF SOAR (CLASS AB)

FIGURE 4 -

Pout versus OUTPUTVSWR

POWER GAIN versus FREQUENCY

::: elt T
f = 30 MHt

350

lCQ = 250 mA

Vr-r = sn v

:>v

250

TC = 50C
i

''*.

vcc = 50 V

1 lCQ = 250 mA
rOUt" 250 W

3 200

ioor

1
4.0

7.0

3.0 5.0

f. FREQUENCY (MHt)

FIGURE 6 - fr versus COLLECTOR CURRENT

-25

VCc=30V

150

/'
15V

= -35

*" 100 If

-03

vcc=

V CC = 50V
= 30. 30.001 MHt

-30

/ y

30 50
OUTPUT VSWR

FIGURE 7 - IMO versus Pout

250

200

r
r

*
CC

1-45
o"

*
0

-50

i.O

lC,COLLECTOR CURRENT (AMPS)

125

175

Put. OUTPUT POWER (WATTS PEP)

MOTOROLA RF DEVICE DATA

2-644

225

275

MRF448

FIGURE 8 -

OUTPUT RESISTANCE AND

CAPACITANCE versus FREQUENCY

vcp

vce = 50V
'CO = 250 mA
Pout = 250 W PEP

|i'6
gg 12

3000 =>2
UJ

2000 g"

gg 8.0
** I

-5

= o

4.0

7.0

f. FREQUENCY |MHi)

FIGURE 9-SERIES EQUIVALENT IMPEDANCE

VCc = 50V
lCQ- 150 mA
P0m= 250 W PEP
1

Zin

MHi

Ohms

4.0

0.60 -J0.75
0.80 -J 1.25
1.70-J1.75
3.10-Jl 80

2.0

4.50 -J 1.40

IS
7.0

MOTOROLA RF DEVICE DATA

2-645

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF449A

The RF Line

30 W-30 MHz

RF POWER
TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON

. . . designed for power amplifier application in industrial, com

mercial and amateur radio equipment to 30 MHz.

Specified 12.5 Volt, 30 MHz Characteristics Output Power = 30 Watts

Minimum Gain * 12 dB

Efficiency = 50%

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Bate Voltage

VcBO

Vdc

Emitter-Baie Voltage

VebO

4.0

Vdc

Watts

343

mW/C

Total DeviceDissipation @Tg " 25C

Derate above 25C

Storage Temperature Range

Tstg

-65 to +150

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

RflJC

C/W

RGURE 1 30 MHz TEST CIRCUIT SCHEMATIC

PIN I. EMITTER
2. BASE
3 EMITTER
COLLECTOR

rr-r.

"E:
e*-

-#*Q

NOTES
1 DIMENSIONINGAND T0LERANCING PER ANSI
YI4SM.1982
2 CONTROLLINGDIMENSION INCH

MILLIMETERS

CI 14-150 pF. ARCO 424

C2, C3, C4 170-780 pF, ARCO 463
C5, C8 ERIE 0.1 mF @ 100 V REO CAPS
C6 1000 pF UNELCO, 350 Vdc

MW
9.40

MAX
978

813

c
0
E
J
K

1702

838
2007

546

597

1.78
008
1245

018

1.40

178

45'NOM

C7 10 pF. 35 Vdc

127

R1 100 n, 2.0 W Carbon

7.59

780

L1 0.15 pH Molded Choke MILLER

401

452

L2 FERROXCUBE, VK200-20-4B

2.11

254

L3 3 Tums, #14 Bare Tinned Wire, 0.3* (0.79) I.D. x 0.38* (0.97) Long

249

335

INCHES
ION

MAX

0370
0320
0670

0385

0215
0070

0235

0003

0007

0490
0055

0070

L5 FERROXCUBE #56-570-65/38, 5 Ferrite Beads, on 1* Long #20 Wire

Input/Output Connectors Type N

MOTOROLA RF DEVICE DATA

2-646

0790

45 NOM
0050
0.307
0.299
0.158
0178
0083
0.100
0098
0.132

L4 9 Turns, #20 Enamel Wire, Close Wound on R1

Board Glass Teflon Mounted on a 4" x 4" x 2" SEE2AK Box

0330

CASE 145A-09

MRF449A

ELECTRICAL CHARACTERISTICS ITC- 25C unlessotherwisenoted)

Symbol

Min

v(BR)CEO

V(BR)CES

V(BR)CB0

V(BR)EBO

4.0

Characteriftic

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc
-

(lc - 100 mAdc. IB - 0)

Collector-Emitter Breakdown Voltage

Vdc

(lC - 50 mAdc, Vbe = 0)

Collector-Base Breakdown Voltage

(lC-20mAdc, Ie0)
Emitter-Bate Breakdown Voltage

Vdc

(lE - 5.0 mAdc, lC - 0)

ON CHARACTERISTICS

hFE

DC Current Gain

(lC 1-0 Adc, Vqe " 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

C0b

140

<VCB - 12.5 Vdc. Ie 0, f - 1.0 MHz)

FUNCTIONAL TESTS (Figure 1)

Common-Emitter Amplifier Power Gain

Gpe

(VCC - 13.6 Vdc, Pout - 30 W, lc(max) = 4.0 Adc,

f - 30 MHz)
Collector Efficiency

%
~

(VCC - 13.6 Vdc, Pout = 30 W, lc(max) = 4.0 Adc,

f - 30 MHz)

Series Equivalent Input Impedance

2.13-J1.15

Zin

Ohms

(Vce - 12.5 Vdc,Pout - 30 W,f - 30 MHz)

Series Equivalent Output Impedance

zout

2.47J0.37

Ohms

(Vce " 12.5 Vdc, Pout - 30 W,f - 30 MHz)

FIGURE 3 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 2 - POWER OUTPUT versus POWER INPUT

1
13.6 Vdc

12.5 Vdc

o
a

Pin-3.5W

f-30 MHi

l-3( MHi

1.5

0.75

1.0

1.25

VCC. SUPPLY VOLTAGE (VOLTS)

Pi, INPUT POWER (WATTS)

MOTOROLA RF DEVICE DATA

2-647

MOTOROLA

SEMICONDUCTOR

MRF450
MRF450A

TECHNICAL DATA

50 W - 30 MHz

RF POWER
TRANSISTORS

NPN SILICON RF POWER TRANSISTORS

NPN SILICON

. . . designed for power amplifier applications in industrial, com

mercial and amateur radio equipment to 30 MHz.

Specified 12.5 Volt, 30 MHz Characteristics Output Power = 50 Watts

Minimum Gain - 11 dB

Efficiency = 50%

MAXIMUM RATINGS
Symbol

Rating

Value

Unit

Collector-Emitter Voltage

VCEO

Collector-Base Voltage

vCBO

Emitter-Base Voltage

VebO
'C

4.0
7.5

Adc

115

Watts

0.66

W/C

-65 to +150

Collector Current Continuous

TotalDevice Dissipation&Tq- 25C

Derate above 25C
Storage Temperature Range

Tstg

Vdc
Vdc
-

Vdc

NOTES
1 BWKSOtmOUCTOUIUHCWClftK
M61YHiM.UO
2 COKTNXUMi CaCKSOl NCH
Kucnn

THERMAL CHARACTERISTICS
Symbol

Characteristic

Unit

Max

smii
mi ewtteii

Thermal Resistance, Junction to Case

C/W

1.53

RflJC

ittst

DM
*

m
jta

1
C

*
so

liUTTED

0
1

ICOUiCIOK

02IS

I
45?

OHO

W
oin

1JM
V
in

tin
ttn
07t)

91'?

*>79

MRF450

m
Mtl
Offi

FIGURE 1 30 MHz TEST CIRCUIT SCHEMATIC

V*
Ml
Otl

CASE 211-07

RMS
tta
OCT
un

"
HJ

'*?}
W
gt
uh

7rr.

-*
-#*-

^
cms
1 OMKWKJCUOTOaiWIOlGPfKMS
ruwita
> ccKTOunGroSKSO* oi

CI 14-150 pF, ARCO 424

C2, C3, C4 170-780 pF, ARCO 469
C5, C8 ERIE 0.1 pF Ca 100 V RED CAPS
C6 1000 pF UNELCO, 350 Vdc
C7 10 *iF, 35 Vdc

DM
*

R1 100 tl, 2.0 W Carbon

LI 0.15 mH Molded Choke MILLER

L2 FERROXCUBE, VK200-20-4B
L3 3 Tums. #14 Bare Tinned Wire, O.r (0.79) 1.0. x 0.38* (0.97) Long
L4 9 Turns, #20 Enamel Wire, Close Wound on R1

smii
Miacma
tits
ICUTTEH
tCOUKTOH

C
D

1
t
I

LS FERROXCUBE #56-570-65/38, 5 Ferrite Beads, on 1* Long #20 Wire

Input/Output Connectors Type N

Board Glass Teflon Mounted on a 4* x 4" x 2* SEEZAK Box

CASE 145A-09
MRF450A

f
I

MOTOROLA RF DEVICE DATA

2-648

HUMERRI
Ma

MB a
MN
mx

u -HL. -SfiL -SfiL

J)B
etn
1J
19
0J11
M
*f>
MR
in
-U2L
oro
to
WW
W
w
ti
in
WS
wn
m
O'MH
r CM
tan
I"
mo JSL .&KL

i
HI
id

.sa

9 in

w l tm

MRF450, MRF450A

ELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted)

Symbol

Min

V(BRICE0

V(BR)CES

V(BR)CB0

Vdc

V(BHIEB0

4.0

Vdc

Characteristic

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc
-

(lC- 100mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage

Vdc

0C" 20mAdc. Vbe-0)

Collector-Base Breakdown Voltage

(lc- 20 mAdc, Ie = 0)
Emitter-Base Breakdown Voltage

(lE 10mAdc, lc"0>

ON CHARACTERISTICS

DC Current Gain

(lc = 1.0 Adc, Vce

S.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

200
-

(VCb= 15 Vdc, 1e - 0. f = 1.0 MHz)

FUNCTIONAL TESTS (Figure 1)

GPE

Common-Emitter Amplifier Power Gain

(VCc = 13.6 Vdc, P0ut" 50 W, lc(max) =6.13 Adc. f

Collector Efficiency

(VCc = 13.6 Vdc, P0ut " 50 W, lc<max)= 6.13 Adc, f =

30 MHz)

Series Equivalent Input Impedance

Zin

1.56-J.89

(VCc = 13.6 Vdc, Pout - 50 W; f = 30 MHz)

Ohms
"

Series Equivalent Output Impedance

Ohms

174-J.50

zout

(VCc " 13.6 Vdc, Pout - 50 W, f = 30 MHz)

FIGURE3 - OUTPUT POWERversusSUPPLY VOLTAGE

FIGURE 2 - INPUT POWER versus OUTPUT POWER

13.6 V dc

60
<

-S

f -= 30M 1'

= 3.5W

f = 30 MHl

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

Vce.SUPPLY VOLTAGE (VOLTS)

Pin, INPUT POWER IWATTSI

MOTOROLA RF DEVICE DATA

2-649

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF454

The RF Line

80 W - 30 MHz

RF POWER
TRANSISTOR
NPN SILICON

NPN SILICON RF POWER TRANSISTOR

. . . designed for power amplifier applications in industrial, com

mercial and amateur radio equipment to 30 MHz.

Specified 12.5 Volt, 30 MHz Characteristics Output Power = 80 Watts

Minimum Gain = 12 dB

Efficiency = 50%

STYIE1
PIN 1.
2
3
4.

EMITTER
BASE
EMITTER
COLLECTOR

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VebO

4.0

Vdc

Collector Current Continuous

Adc

Total Device Dissipation @Tc * 25C

250

Watts

1.43

W/C

Tstg

-65 to +150

Derate above 25C

Storage Temperature Range

C
NOTES.
1 DIMENSIONINGAND T01ERANONG PER
ANSI YI4 5M. 1382
2 CONTROLLING DIMENSION INCH

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

RfljC

0.7

CAV

MJUJMETERS

INCHES

OHM

MIN

MAX

MIN

MAX

25.14

0.960

0990

24 39
11.8?

0465

0510

0229

582

12.95
693

S.49

696

0.216

E
H
J

214

279

366

452
017

0.064
0.144

0179

0.003

0007

M
0
R
U

0.03

110$
45* NOM

2.93

130

625
1829

1854

647

0435

2-650

45* NOM
0130
0755
0.246
0730
0.720
0.115

CASE 211-11

MOTOROLA RF DEVICE DATA

0275
0235
0110

MRF454

ELECTRICAL CHARACTERISTICS (Tc 25Cunless otherwise noted.)

Characteristic
Symbol

Typ

Min

Max

Unh

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

V(BR)CES

V(BR)EBO

4.0

"FE

Vdc

llc = 100 mAdc, lB - 0)

Collector-Emitter Breakdown Voltage

Vdc

(lC 50 mAdc, Vbe =<

Emitter-Bate Breekdown Voltage

Vdc

(lE10mAdc, lc"0)
ON CHARACTERISTICS
DC Current Gain

150

C - 5.0 Adc, VcE " 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

250

Cob

(Vcb ' 15 Vdc, lE > 0, f - 1.0 MHz)

FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain

Gpe

IVCc - 12.5 Vdc, Pout - 80 W, f - 30 MHz)

Collector Efficiency

IVcc - 12.5 Vdc, Pout - 80 W, f - 30 MHz)

Series Equivalent Input Impedance

Zin

.938-J-341

1.16-J.201

Ohms

(Vce " 12.5 Vdc, Poot - 80 W, f - 30 MHz)

Series Equivalent Output Impedance

zout

Ohms

IVcc - 12.5 Vdc, Pout - 80 W. f - 30 MHz)

Parallel Equivalent Input Impedance

1.06 n

(VCC- 12.5 Vdc, P00t - 80 W, f - 30 MHz)

1817 pF

Parallel Equivalent Output Impedance

1.19 n

(VCC- 12.5 Vdc. Pout - 80 W. f - 30 MHz)

777 pF

FIGURE 1 - 30 MHz TEST CIRCUIT SCHEMATIC

HHHHHMT

3 Tumi. 18 AWO. 5/16" I.D.. 6/16" Long

VK200 - 20/4B. FERROXCUBE
12 Turnt, 1B AWG Enameled Wiro, 1/4" I.O.,

ARCO 469
ARCO 466

1000 pF. UNELCO

0.1 pF Ditk Ceramic
1000 (iF/15 V Electrolytic
10 Ohm/1 Watt. Carbon

Clow Wound

3 Turnt 1/8" O.D. Copper Tubing, 3/8" I.O..

3/4" Long
7 FERRITE Budi, FERROXCUBE #S6-S90-6S/3B

FIGURE 3 - OUTPUT POWER versus

SUPPLY VOLTAGE

FIGURE 2 - OUTPUT POWER versus

INPUT POWER
120

I
105

Vce-

13.6 V

Vce-

p
os

Pin- i.OW

L5W

12.5 V

-*^^

.75 W

I(-3 )MHr
1

f-3( MHt
I

3.0

4.0

5.0

6.0

7.0

8.0

9.0

8.0

9.0

VCC.SUPPLYVOLTAGE(VOLTS)

Pin.INPUTPOWER (WATTS)

MOTOROLA RF DEVICE DATA

2-651

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF455
MRF455A

The RF Line
60 W - 30 MHz

RF POWER
TRANSISTORS
NPN SILICON

NPN SILICON RF POWER TRANSISTORS

. . . designed for power amplifier applications in industrial, com

mercial and amateur radio equipment to 30 MHz.

Specified 12.5 Volt. 30 MHz Characteristics Output Power = 60 Warn

Minimum Gain - 13 dB

Efficiency = 55%

nous

I OWKSOaGMCTOUfUUOCPlH
AKSYUSM.1IO

1 CWTWUMGMKNSION MX

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

vCEO

Vdc

Collector-Emitter Voltage

VCES

Vdc

Emitter-Base Voltage

4.0

Collector Current Continuous

c
PO

Derate above 2SC

Vdc

Adc

175

Watts

W/C

1.0

Storage Temperature Rango

Tstg

-65 to +150

mui Eras
MM
*4
an

news
MM
KW
os

018
OOT

iff

71}

m i Eurm

f
If
V
r.
*
g

in
j n
Oil

irt
Iff
*f>

UIS

2-ttSf.

smf i

VEBO

Total DeviceDissipation @Tc " 25C

(
A

lurny
(COMKTOft

CASE 211-07

1
V

CIS

r
in

171
W
W?

us
JOSJ
w

nv
*M>

0J
0235

ons
HIM
ttv
MB
W

tin
s
Mr

Oil]

em
o
0118
orn

)WS
07
or

THERMAL CHARACTERISTICS
Symbol

Characteristic

Thermal Resistance, Junction to Case

RfljC

Max

Unit

1.0

C/W

MATCHING PROCEDURE

In the push-pull circuit configuration it is preferred that

the transistors are used as matched pairs to obtain optimum
performance.

HOTtS
i usKSOKNawDTouwNciNapeitMisi

? CSNTKXUNS UOKSON: not

The matching procedure used by Motorola consists of

measuring hpt* at the data sheet conditions and color cod

ing the device to predetermined hpg ranges within the

normal hpc: limits. A color dot is added to the marking on
top of the cap. Any two devices with the same color dot
can be paired together to form a matched set of units.

Huwrtn
(M

STYUI:
urn um

-M^-

111
a
M

OCT
OJtJ
too
on
CO)
toss

1HS
l
in
OH

1IKTTEK
4.C0UKT0D

e
MM

MOTOROLA RF DEVICE DATA

2-652

?>.

>
UI
!U
US

WB
ojjj
tin
as
MO

e*o

"P
IH

l
Jit

CASE 145A-09

Iff

ttst

((O
tot

two
XO
nt
on>
019

MRF455, MRF455A
ELECTRICAL CHARACTERISTICS (TC - 25C unless otherwise noted.)
Characteristic

| Symbol |

Min

V(BRICEO

V(BR|CES

V(BR)EBO

4.0

Typ

Max

"]"

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

(IC -100 mAdc, lB-0)

Collector-Emitter Breakdown Voltage

Vdc

(lC 50 mAdc, VBf- - 0)

Emitter-Base Breakdown Voltage

Vdc

(lE-10 mAdc, lc-0)

ON CHARACTERISTICS
DC Current Gain

"FE

150

(lc 5.0 Adc. Vce 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

(VCB "12.5 Vdc, lE" 0,f-1.0MHz)

FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain

Gpe

(VCc 12.5 Vdc, Pout - 60 W, f - 30 MHz)

Collector Efficiency

(Vce 12-5Vdc, Pout 60 W, f - 30 MHz)

Series Equivalent Input Impedance

Zin

1.66-J.844

1.73-J.188

Ohms

(VCC - 12.5 Vdc, Pout - 60W, f - 30 MHz)

Series Equivalent Output Impedance

zout

Ohms

(VCc - 12.5Vdc, Pout - 60 W, f 30 MHz)

Parallel Equivalent Input Impedance

Zin

2.09/1030

Sl/pF

(VCc - 12.5 Vdc, P0ut - 60 W, f =30 MHz)

Parallel Equivalent Output Impedance

zout

1.75/330

n/pF

(Vce " 12.5 Vdc, Pout =60 W, f =30 MHz)

FIGURE 1- 30 MHz TEST CIRCUIT SCHEMATIC

TzP"*-~*T! T~Z

T_J

10C
#-

-j?C2

C1.C2.C4

ARCO 469

ARCO 466

CS
C6, C7
CB
R1

3 Turrit, bib AWG, 5/18" I.O.. 5/16" Long

VK200 - 20/4B. FERROXCUBE
12 Turnt. SIB AWO Enamalad Wlra. 1/4" I.O..

1000 pF. UNELCO

0.1 pf Oi*k Caramlc
1000uF/15 V Electrolytic
10 Ohm/1 Watt. Carbon

Clota Wound

3 Turnj 1/B" O.O. Ooppar Tubing. 3/8" I.O.,

3/4" Long
7 FERRITE Baad>. FERROXCUBE #S6-S90-66/3B

FIGURE 3 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 2 - OUTPUT POWER versus INPUT POWER

VCC = 13.6 Vdc

30 Ml

!
12.

Pin 3.5 W

|
1.75W

Vdc

p
EC

30 Mr

1.0 Vi

40
CC

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

VCC. SUPPLY VOLTAGE (VOLTS)

Pin. INPUTPOWERWATTS)

MOTOROLA RF DEVICE DATA

2-653

MOTOROLA

SEMICONDUCTOR

MRF464

TECHNICAL DATA

MRF464A

The RF Line

80 W (PEP) -30 MHz

RF POWER
TRANSISTORS

NPN SILICON RF POWER TRANSISTORS

NPN SILICON

. . . designed primarily for applications as a high-power linear amplifier

from 2.0 to 30 MHz, in single sideband mobile, marine and base station
equipment.

Specified 28 Volt. 30 MHz Characteristics Output Power = 80 W (PEP)

Minimum Gain = 15 dB

Efficiency = 40%
Intermodulation Distortion = -32 dB (Max)

MAXIMUM RATINGS
\

Rating

Symbol

Collector-Emitter Voltage

Value
35

vCEO
vCBO

Vdc

Emitter-Base Voltage

vEBO

4.0

Vdc

Adc

250

Watts

1.4

W/C

Tstg

-65 to +150

Collector Current - Continuous

Total Device Dissipation @Tc = 25C

:..

, wuwrtns

...

Derate above 25C

Storage Temperature Range

Vdc

Collector-Base Voltage

-is

1 DMlNStOMWJAMJKXtRiNClSGPf0
msivusm >w

Unit

,,.

-i;

totf__ !
wiiu

!*;

:.-:

P , is

MSi

::>.

017

'.!:

:---

:>.

CASE 211-11

MRF464

,;-.

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case

Stud Torque (11

Symbol

Max

Unit

Rojc

()./

c/w

s.r.

In. Lb

11)CaM 145A-10 For Repeated Assembly Use 11 In. Lb.

MATCHING PROCEDURE

In the push-pull circuit configuration it is preferred that

the transistors are used as matched pairs to obtain optimum

OTIS
1 ttWNSiOVM SD T&lMVUVi

performance.

S\sv:sw lit."
:

:.-=:..

: -. .

.-.

-..-

The matching procedure used by Motorola consists of

WLUMfimS

measuring hFE at ,ne data sheet conditions and color cod

k".

!.-

MCKS

VJI

VJ,

Vll

.:.:

:.'..

CS'. ,

ing the device to predetermined hpE ranges within the

normal hpf limits. A color dot is added to the marking on

top of the cap. Any two devices with the same color dot
can be paired together to form a matched set of units.

smii
> lum*
1 EASE
1 mnw

.::'.

CASE 145A-10
MRF464A

2-654

CXI

urn

B-NOM

I
u

:::

::;

MOTOROLA RF DEVICE DATA

is-

I
J

0001

1: ',0V
-

-.:.

::>:
....

:?/.

::.:

:!'.:

MRF464, MRF464A
ELECTRICAL CHARACTERISTICS (Tc - 25C unlessotherwisenoted)
Symbol

Min

V(BR)CEO

V(BR)CES

V(BR)EBO

4.0

Characteristic

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

C "100 mAdc, lB-0)

Collector-Emitter Breakdown Voltage

Vdc

C - 100 mAdc, VBE-0l

Emitter-Base Breakdown Voltage

Vdc

(lE = 1.0 mAdc, lCa0)

Collector Cutoff Current

mAdc

'CES

(Vce " 28 Vdc. VB - 0, Tc +5SC)

ON CHARACTERISTICS
OC Current Gain

hFE

dc - o.s Adc, vce s Vdc*

DYNAMIC CHARACTERISTICS

Cob

Output Capacitance

IVcq 28 Vdc, l - 0, f - 1.0 MHz)

pF
200

FUNCTIONAL TEST

Gpe

Common-Emitter Amplifier Power Gain (Figure 11

(Pout "80 W (PEP),lC 3.6 Adc (Max), VCC " 28 Vdc.

f1 - 30 MHz, (2 30.001 MHz)

Intermodulation Distortion Ratio (Figure 1) (1)

IMD

IPout = 80 W (PEP), lc = 3.6 Adc (Max),Vcc = 28 Vdc,

-32

fl = 30 MHz. f2 = 30.001 MHz)

Collector Efficiency

(P0ut " 80 W (PEP), lc - 3.6 Adc (Max), VCc - 28 Vdc,

f - 30 MHz, f2 - 30.001 MHz)

(1) To Mil-Std-1311 Version A, Test Method 2204B, Two Tone, Reference each Tone.

FIGURE 1-30 MHz TEST CIRCUIT

RF BEADS

Q-O-Q-DI

RfSOll

^Q-<

RFC: 20 TURNS #12 AWG ENAMELEDWIRE CLOSEWOUNOIN2LAYERS. 1/4"I.D.

Tl: 20 TURNS 124 AWG WIRE WOUND ON MICRO-METALST37-7 T0R0I0

Vbb opioid lor ICO: 40 mAdc UCQ Quinccnt

CoOectoi Cantntl

CORE CENTER TAPPED.

T2: 1:9 XFMR:STURNS OF 2 TWISTED PAIRS OF 8 AWG ENAMELEDWIRE.

ISCRESTSPER INCH) BIFILAR WOUNO ON EACH OF 2SEPARATE BALUN CORES.

ISackpol' #57-1503. No. 14 Mitiriil) Inttreamwttd H shown

CI - DO 180 pF ARCD 4S9 or Equiv.

C2-3Mpf

RF BEADS: FERROXCUBE /W-SSOW33

MOTOROLA RF DEVICE DATA

2-655

3D
m

. UI

\lP*
3,0

Ca>

Si3

RESISTANCE (OHMS)

Rout. PARALLEL EQUIVALENT OUTPUT

o c3

?'?

Cout.PARALLELEQUIVALENT
OUTPUT CAPACITANCE (pF)

S
s

**n

fs*

o
c

Bi 565-

it!.
-_e

fe>

IMD. INTERMODULATION DISTORTION (dB)

Pout.OUTPUT POWER (WATTS PEP)

1
/
/

//
'

GpE. POWERGAIN (dB)

oaco

ass

BOO

Pout.OUTPUT POWER (WATTS)

4&>

MRF464, MRF464A
FIGURE 8 - DC SAFE OPERATING AREA
10

s
<

6.0
oc

3
u

4.0
1u

2.0

5.0

10
15
20
25
30
35
VCE.COLLECTOR-EMITTER VOLTAGE (VOLTS)

FIGURE 9 - SERIES INPUT IMPEDANCE

MOTOROLA RF DEVICE DATA

2-657

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF466

The RF Line
40 W (PEP)

NPN SILICON RF POWER TRANSISTOR

30 MHz

RF POWER
TRANSISTOR

. .. designed primarily for applications as a high-power amplifier

from 2.0 to 30 MHz, in single sideband mobile, marine and base

NPN SILICON

station equipment.
Specified 28 V, 30 MHz Characteristics
Output Power = 40 W PEP or CW
Minimum Gain = 15 dB

Efficiency = 40%

Intermodulation Distortion d3 = -30 dB Max

Guaranteed Ruggedness
2NS941 Replacement

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

Collector-Currant Continuous

6.0

Adc

Total Device Dissipation Tc = 25C (1)

175
1.0

Watts
W/C

Tstg

-65 to +150

Symbol

Max

Unit

RflJC

1.0

C/W

Derate above 25C

Storage Temperature Range

STYLE V
PIN I EMITTER
2. BASE
3 EMITTER
4 COLLECTOR

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case (2)

(1)This device is designed for RFoperation. The totaldevicedissipation rating applies

only when the device is operated as an RF amplifier.

(2)Thermal Resistanceis determined under specified RFoperatingconditionsby infrared

measurement techniques.
NOTES

1 DIMENSIONING AND TOLERANCING PER

ANSI Y14 5M. 1982
2 CONTROLLINGDIMENSION INCH

DIM

MATCHING PROCEDURE

MUMETERS
MAX

MIN
2439

940

582
547

MAX
0990

990

0370
0229

713

performance.

381

596
266
4 57

Oil

015

1004

1028
50

216

The matching procedure used by Motorola consists of measuring

rtFE at the data sheet conditions and color coding the device to

predetermined hpE ranges within the normal hpf-limits. Acolor dot

268

is added to the marking on top of the cap. Any two devices with the
same color dot can be paired together to form a matched set of units.

mcres
MIN
0960

In the push-pull circuit configuration it is preferred that

the transistors are used as matched pairs to obtain optimum

2514

0215

0085
0150
0004

0395

623
2007

330
647
2057

40
0113
0245
0 790

1829

1854

0720

CASE 211-07

MOTOROLA RF DEVICE DATA

2-658

0390

0281
0235
0105
0180
0006
0(05
50
0130
0255

0810
0730

MRF466
ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted)
Characteristic

Symbol

Min

V(BR)CE0

Typ

Unit

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lc= 100 mAdc, lfl = 0)

V(BR)CES

Collector-Emitter Breakdown Voltage

(lc =100 mAdc, VBE = 0)

V(BR)EB0

Emitter-Base Breakdown Voltage

Vdc

4.0

dE= 1.0mADC.Ic = 0)
mAdc

5.0

'CES

Collector Cutoff Current

(vce =28 vdc, vBe =)

ON CHARACTERISTICS
DC Current Gain

"FE

Cob

125

dC = 0.5 Adc, Vce ~ 50 Vdc>

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCb= 28 vdc' <E = 0-' = 0 MHz'

FUNCTIONAL TESTS
15

GPE

Common-Emitter Amplifier Power Gain

(VCc = 28 Vdc, Pout= 40 W (PEP), fl =30 MHz.

f2 =30.001 MHz, Icq =20 mA)

Collector Efficiency

(VCc = 28 Vdc,Pout=40 W(PEP), f1 = 30 MHz

f2 =30.001 MHz, Icq =20 mA)

IMD,d3)

Intermodulation Distortion (1)

(VCc= 28 Vdc. Pout = 40 W (PEP),f1

f2 = 30.001 MHz,lCQ = 20 mA)

30 MHz,

No Degradation in Poutput Power

Load Mismatch

(VCC = 28 Vdc, Pout =40 W (PEP), f = 30 MHz,

VSWR = 30:1 All Angles)

(1)ToMIL-STD-1311 Version A,Test Method 2204B,TwoTone, Reference EachTone.

FIGURE 1 - 30 MHz TEST CIRCUIT

RF Boads

Cl-D-D-D
-rtJ-U-LJ-L-rJ
jUoOOpF , FX

500 pF

I Button

iopH C"r~

RFC: 20 Tums #18 AWG Enameled Wire Close Wound in 2 Layers.

-"j
+i26MF
-I

< +

28 Vdc
<-

hl=son

Vqq adjusted for Iqq: 20 mAdc (Icq - Quiescent

Collector Current)

1/4*1.0.

Tl: 20 Turns 24 AWG Wiro Wound on Micro Metals T37-7

CI 80-480 pF. ARCO 466 or Equiv

C2 220 pF

Toroid Core Center Tapped.

T2. 1:9 XFMR; 6 Turn* of 2 Twisted Pairs of 8 AWG Enameled

Wire (8 Crests per Inch) BifilarWound on each of 2 Separate
Balun Cores.

(Stackpota #57-1503 No. 14 Malarial) tmarconnactad aa (Down.

RF BEADS: Ferroxcube #56-590-65/3B

MOTOROLA RF DEVICE DATA

2-659

MRF466
FIGURE 2 OUTPUT POWER versus INPUT POWER

FIGURE 3 -

POWER GAIN versus FREQUENCY

vce
1= 60

= 28V

lOMHl

-*cc= ,fl u
Pout= 40W
icq = zo mA

= 20mtA

< 20
a

1 15
ca

0.4

0.6

50
1.5

0.8

2.0

5.0

3.0

Pin. INPUT POWER (WATTS)

7.0

f. FREQUENCY (MHz)

FIGURE S -

INTERMODULATION DISTORTION versus

FIGURE 4 OUTPUT POWER versus SUPPLY VOLTAGE

OUTPUT POWER
-10
~

IMD. d3 = 35 dB

f = 30. 30.001 MHi

-20
lCQ = 20 mA

"cQ = 2UnW

P-30

"3
-40
<>5

FIGURE 6 -

Pout. OUTPUT POWER (WATTS. PEP)

Vet SUPPLY VOLTAGE (VOLTS)

OUTPUT CAPACITANCE versus FREQUENCY

&2500

FIGURE 7 OUTPUT RESISTANCE versus FREQUENCY

111

Vce -28 V
pout = 40 W PEP
"CQ- 20 mi*

2000

vec = 28V
Pout= 40W
1500

'CO=

PEP

zumA

9.0
1000

500
"**

1.5

2.0

5.0

7.0

6.0

f. FREQUENCY (MHz)

7.0

I. FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-660

MRF466
FIGURE 8 - SAFE OPERATING AREA

spz:::::

0.3

0.5

1.0

3.0

5.0

100

Vce. COLLECTOR EMITTER VOLTAGE (VOLTS)

FIGURE 9 -

SERIES INPUT IMPEDANCE

VCC = 28V
lCQ =20 mA
Peut =*0 W (PEP)

MOTOROLA RF DEVICE DATA

2-661

(
MHr

Ohms

1.58 - jl.04

Zir.

2.20-J1.24

7.5

3.00-J1.38

4.0

3.70-J1.45

2.0

4.40 -jl.51

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF475

The RF Line
12 W (PEP) 12 W (CW) 30 MHz
RF POWER

NPN SILICON RF POWER TRANSISTOR

TRANSISTOR

... designed primarily for use in single sideband linear amplifier

NPN SILICON

output applications in citizens band and other communications

equipment operating to 30 MHz.

Characterized for Single Sideband and Large-Signal Amplifier

Applications Utilizing Low-Level Modulation
Specified 13.6 V, 30 MHz Characteristics
Output Power = 12 W (PEP)

Minimum Efficiency = 40% (SSB)

Output Power = 12 W (CW)
Minimum Efficiency = 50% (CW)
Minimum Power Gain = 10 dB (PEP & CW)

Common Collector Configuration

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

vEBO

4.0

Vdc

4.0

Adc

Watts

0.1

W/C

Collector Current - Continuous

Total Device Dissipation @> Tq = 50C

Derate above 50C

Operating and Storage Junction

TJ. Tstg

-65 to+150

Temperature Range

FIGURE 1 - COMMON-EMITTER TEST CIRCUIT

STVIE I:
PIS 1 BASE

2 COttfCTOII
3 EMITTER

NOTES

r5T

4C0UEC,0',

I DIMENSIONING AND TOLERANCING PES ANSI

Y14 5M 136!

; CONTROLLING DIMENSION INCH

3 DIM2 DEFINES AZONEWHERE AIL BOD*ANO

LEAD HEGUUBnCSME ALLOWED

^MILLIMETERS
MIN ~ MAI

BFout
RFm>

'4 4? _ IS:

INCHES
MS

101

iti

' 160

:-:

'---

!,-J

::.

5C3:

;;

0141

" :-;
H

Adjust lor ICQ - 20 mA

CI. 2. 6 - ARCO 466 Trim

Capa
C3
- 1000 pF. 3.0 Vd
ytli
C4. 7
- 0.1 pF Olsc Ceramic*
C8
- 100 uF. 15 Vdc Eloctrolyti
- i o n . 5.0 Watt Resistor
R2

10 ft. 1.0 Watt Resistor

2.2 uH Molded Choke

393

RFC1

10 uH Moldod Choko

RFC2

15 Turns =20 AWG Wire

RFC3

0110

::::

3014

I? 70
US

139

0 345

::::

J 33

533

: :

o:io

2S4

3 'J

0100

::-

0080

0110
0055

on 5.6 kO.

:-,:

1.0 Watt Carbon Resistor

115

5 Forroxcubo. #56-590-65/3

MAI

OSJO * 06B '

S9J

6tt

0 33!

0JS5

Beads on =18 AWG Wire

:::

: :>:

0050

1N4997

IIS

0 045

4 Turns #18 AWG Wire,

1/2" I.D., 5/16" Long

J I

CASE 221A-04
TO-220AB

MOTOROLA RF DEVICE DATA

2-662

o oat

MRF475

ELECTRICAL CHARACTERISTICS (Tc - 25Cunless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

V(BR)CEO

V(BR)CES

V(BR)EBO

4.0

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

(lC 20 mAdc, lB D0)

Collector-Emitter Breakdown Voltage

Vdc

(lC 50 mAdc, VBe 0)

Emitter-Base Breakdown Voltego

Vdc

(lE = 5.0 mAdc, lc0)

CBO

Collector Cutoff Current

1.0

mAdc

(.VcB"25Vdc.lE = 0)
ON CHARACTERISTICS
OC Current Gain

hFE

(lC 500 mAdc, Vce 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

125

Cob

(VCB 13.6 Vdc, lE 0. f 1-0 MHz)

FUNCTIONAL TESTS (SSB)

Common-Emitter Amplifier Power Gain

Gpe

(Vcc = 13.6 Vdc, Pout = 12 W (PEP), fl = 30 MHz,

f2 = 30.001 MHz, Icq = 20 mA)
Collector Efficiency

(Vcc = 13.6 Vdc, Pout = 12 W (PEP), f1 = 30 MHz,

f2 = 30.001 MHz,Icq = 20 mA)

%
"

Intermodulation Distortion (1)

-30

IMD

(Vcc = 13-6Vdc, Pout = 12 W (PEP),fl = 30 MHz,

f2 = 30.001 MHz, lCQ = 20 mA)
FUNCTIONAL TESTS (CW)
12

GpE

Common-Emitter Amplifier Power Gain

(VCC " -3-6 Vdc, Pout - 4.0 W.f - 30 MHz)

Collector Efficiency

(VCC " 13.6 Vdc, Pout 4.0 W,f 30 MHz)

Percentage Up-Modulation (1)
(4.0 W Carrier)
IMPEDANCE CHARACTERISTICS
Zin

Series Equivalent Input

Vcc =13.6 Vdc

Series Equivalent Output

Zout

P=12W(PEP)

Parallel Equivalent Input

f = 30 MHz, lCQ 20 mA

Parallel Equivalent Output

Zln

zout

4.5H2.4

5.1-J3.2
53/10.9
7.1/11.3

Ohms
Ohms

n/pF
n/pF

(1) To proposed EIAmethod of measurement. Reference peak envelope power.

(2) Percentage Up-Modulation is measured inthetestcircuit (Figure 1)bysetting theCarrier Power (Pc) to4.0Watts with Vcc = ,3-6Vdc and
noting the power input. Then the Peak Envelope Power (PEP) is noted after doubling theoriginal power input to simulate driver modulation.
Percentage Up-Modulation

{ffl

MOTOROLA RF DEVICE DATA

2-663

MRF475

FIGURE 3 -

FIGURE 2 - OUTPUT POWER versus INPUT POWER

INTERMODULATION DISTORTION
versus OUTPUT POWER

g 20

20 m/

vcc

vcc
CO

1 30M iz

13.6 Vdc

- 30.30.001 MHi

-13.6 fit

3rd Order

| 10
3

o? 5.0

0.4

0.8

1.2

1.6

4.0

Pin. INPUT POWER (WATTS)

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

Irjrj 20mA

8.0

Pout.OUTPUT POWER (WATTS PEP)

>EL
AQRUILVAE CUTITANPCAE

FIGURE 5 - OUTPUT CAPACITANCE versus FREQUENCY

-4000
s

f- 30.30.001 MHt

-Vcc
'CO "
~ pout "

13.6 Vrtr
20 mA
12WI

IMD - -30dB^

Jo tooo
0

5.0

VCc.SUPPLY VOLTAGE (VOLTS)

FIGURE 6 - OUTPUT RESISTANCE versus FREQUENCY

FIGURE 7 - POWER GAIN versus FREQUENCY

COMMON EMITTER

- VCC 13 8 Vrir
lCQ 20 mA

vcc 13.6 Vdc

I-

~ pout '

7.0

FREQUENCY (MHz)

-4 X

pout

2
= uj

I 20
a

u|S5.0

COMkl 0N-C DLL ECT OR

2 =
2=>

*-l

1.5

2.0

3.0

5.0

7.0

5.0

FREQUENCY (MHi)

7.0

FREQUENCY (MHr)

MOTOROLA RF DEVICE DATA

2-664

20 mA

12 W PEP

MRF475

FIGURE 8 - SERIES EQUIVALENT INPUT IMPEDANCE

FIGURE 9 - COMMON-COLLECTOR TEST CIRCUIT

RFC3

0~V-

ic7

0-13.6 Vdc

=*C8

J-o +

RF,n

^|C5

^C6 "X"

CI, 6

ARCO 466 Trimmer Capacitors

0.33 uH Moldod Choke

ARCO 463 Trimmer Capacitor

4 Turns #18 AWQ Wire, 1/8" I.O., 6/16" Long

C3,4, 7

0.1 (JF Caramlc Disc

RFC1

IB uH Molded Choke

C6
C8
R1
R2
R3

ARCO 469 Trimmer Capacitor

100 uF 15 Vdc Electrolytic
250 R, 2.0 W Potentlomoter
5.1 tl, 1/2 W Resistor
61 n. 2.0 W Resistor

RFC2

15 Turns #20 AWG Wiro on 100 St. 1.0 W Carbon Resistor

RFC3

Ferroxcube, #66-580-65/38, Boads on #18 AWG Wiro

MOTOROLA RF DEVICE DATA

2-665

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF476

The RF Line
3.0 W (PEPJ-3.0 W (CW) - 30 MHz
RF POWER

TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON

... designed primarily for use in single sideband linear amplifier

output applications in citizens band and other communications

equipment operating to 50 MHz.

Characterized for Single Sideband and Large-Signal Amplifier
Applications Utilizing Low-Level Modulation
Specified 12.5 V, 30 MHz Characteristics
Output Power = 3.0 W (PEP)
Minimum Efficiency = 40% (SSB)
Output Power = 3.0 W (CW)
Minimum Power Gain = 15 dB (PEP)

Common-Collector Configuration

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

vCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

'C
PD

1.0

Adc

Watts

57.2

mW/C

-65 to +150

Collector-Emitter Voltage

Collector Current Continuous

Total DeviceDissipation @T/\ " 25C (1)

STYLE 1

Derate above 25C

Storage Temperature Range

Tstg

(1) This device is designed for RF operation. The total device diss ipation rating app lies
only when the device is operated as an RF amplifier.

PIN t BAH

2 COLLECTOR
3 EMITTER

NOTES

1 DIMENSIONINGAND T0LERANC1NGFIR ANSI

Y14SM.1992

2 CONTROLLINGDIMENSION INCH
3 DM z DEfWES A ZONE WHERE All BODY AND
LEADIRREGULARITIES ARE ALLOWED

1449

15 7S

966
407

ion
4*3

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

RflJC

17.5

C/W

MUME-EHS
MAX

DM
B
C
0
f

THERMAL CHARACTERISTICS

,aKUaW

J
r.

NCWS
MAX

0570
0390
01C0

Ott

0025

361

373

0142

:2
290
036
1270

786

0095

IIS

H
q

493
J 54

0105

393

0110

0155

OSS

0014

0022

Hit

?50o

139
533

OMS

OOSS

0190

0210

0120

0562

304

0100

204

7.79

0090

0110

0055

S97

U3
647

0045

0255

U
V

099
US

0003

0050

004S
-

0093

177

704

CASE 221A-04

TO-220AB

2-666

0035
0147

MOTOROLA RF DEVICE DATA

0620
0405
0190

MRF476
ELECTRICAL CHARACTERISTICS (Tc 25Cunless otherwise noted.)

Characteristic

Symbol

Min

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

V(BRICE0

V(BR)CES

V(BR|EBO

4.0

DC" 10 mAdc, Ib - 0)
Collector-Emitter Breakdown Voltage

Vdc

(lC 25 mAdc, VBg = 0)

Emitter-Base Breakdown Voltage

Vdc

(IE " 1.0 mAdc, lc-0)

Collector Cutoff Current

'CBO

0.5

mAdc

(VCB = 15Vdc,lE"0)

ON CHARACTERISITCS

hFE

DC Current Gain

(lC - 250 mAdc, Vce = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

(VCB = 12.5 Vdc, l - 0, f - 1.0 MHz)

FUNCTIONAL TESTS (SSB)

Common-Emitter Amplifier Power Gain

(VCc" 12-5Vdc pout 30 W(PEP) f1 - 30 MHz,

f2 = 30.001 MHz, ICQ 20 mA)
Collector Efficiency

(VCC = 12.5Vdc,P0ut" 30w <PEP' 1 - 30 MHz.

f2 = 30.001 MHz, ICO - 20 mA)
Intermodulation Distortion (1)

(Vcc = 125 Vdc, Pout = 3.0 W (PEP) fl

30 MHz,

f2 = 30.001 MHz, ICQ = 20 mA)

50 MHz PERFORMANCE

GpE

Common-Emitter Amplifier Power Gain

(VCC " 12S Vdc>pout 3-0W.f - 60MHz)

(1) To proposed EIAmethod of measurement. Reference peak envelope power.
FIGURE 1 - 30 MHz TEST CIRCUIT SCHEMATIC

C2 Arco 466 Trimmer

RFC1 -

10uH Molded Choko

C1. C7 Arco 469 Trimmer

C3 - 500 pF. 3.0 V Eloctrolytlc

RFC2 -

1.9 itH Moldod Choko (Ohmite Z-144)

RFC3 - 6 Ferroxcubo Boads on #18 AWG Wire

C4, C5. C8 - 0.1 pF Erie Redcap

C6- 1000 pF UNELCO
C9 - 100 pF. IS V Electrolytic
R1 -

33 ft 5 W Wire Wound

R2 -

50 n

01 -MR751

Board Q10, 2-tldad 2 oz. Copper Clad

Connectors Typo N

1/2 W Carbon

LI - 0.22 fiH Molded Choke

L2 - 5 Turns #18 Enomelod Wire, 1/4" ID

MOTOROLA RF DEVICE DATA

2-667

MRF476
FIGURE 3 - OUTPUT POWER versus INPUT POWER

FIGURE 2 - POWER GAIN versus FREQUENCY

I-30M

ICC1-20 ir,A

S4.0

VC(; 12.5 V

S 30
S
o

1 2.0
VCr

12.5 V

ICQ- 20 mA

a? 1.0

Po-3.0WI>EP
IS

3.0

5.0

7.0

I. FREQUENCY (MHi)

Pin. INPUTPOWEH (mW)

FIGURE 4 - OUTPUT POWER versus INPUT POWER

FIGURE 5 - OUTPUT POWER versus SUPPLY VOLTAGE

a.u

4.0

IMD (d3) -35 dB

ICQ- 201nA

-74.0

VCc =12.! V

ICQ-20mA

i.in innniuu.

3.0

2
0

52.0

2.0

|1.0

1.0

100

150

Vcc. SUPPLY VOLTAGE (VOLTS)

Pirl. INPUT POWER (mW)

FIGURE 6 - INTERMODULATION DISTORTION

versus OUTPUT POWER

FIGURE 7 - OUTPUT CAPACITANCE versus FREQUENCY

1
vcc 1$V
ICQ = 20 mA
f-

ICQ -20 mA

30.30.00 IMH2

Po3.0VI

r
>

PtP

=
5
a *

d |250
<
2
CC 1<

- S

IS
_

5th ( rdtr

1.0

20)

1.5

3.0

2.0

Pou. OUTPUT POWER (WATTS-PEP)

3.0

5.0

7.0

f. FREQUENCY MHz)

MOTOROLA RF DEVICE DATA

2-668

MRF476

FIGURE 8 - OUTPUT RESISTANCE versus FREQUENCY

1
Vcc

.1J5V

ICQ 20mA

3.0 W PEP

is
=

ui S520

t a
IS

3.0

5.0

7.0

f. FREQUENCY(MHi)

FIGURE 9 - SERIES EQUIVALENT INPUT IMPEDANCE

MOTOROLA RF DEVICE DATA

2-669

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF477

The RF Line
40 W (PEP) -30 MHz
RFPOWER

TRANSISTOR
NPN SILICON RF POWER TRANSISTOR

NPN SILICON

... designed primarily for application as a high-power linear

amplifier from 1.5 to 30 MHz, in single sideband mobile, marine

and base station equipment.

Low-Cost, Common-Emitter TO-220AB Package

Specified 12.5 Volt, 30 MHz Performance
Output Power = 40 W CW or PEP
Power Gain = 15 dB Min

Efficiency = 40% Min (PEP)

Intermodulation Distortion fa 40 W (PEP)

IMD = -30dB (Max)

30:1 VSWR Load Mismatch Capability at Rated Output Power

and Supply Voltage

Wit

MAXIMUM RATINGS
Rating

STYU2

mi, BASE

Symbol

Collector-Emitter Voltage

VCEO

Collector-Base Voltage

vCBO

Emitter-Base Voltage

vEBO

2 EMITTER
3 COUECT0R
4 EMITTER

NOTES.

\. DIMENSIONING ANDTOIERANONG PERANSI

::'.'

2. OONTROWNG DIMENSION: INCH

Collector Current - Continuous

3 DIMZDEFINESAZONEWHERE AH BODY AND

1EAD IRREGlLASiTSS ABEAUOMO

8.0

Withstand Current

W IUVETERS

(t = 5.0 s|

Total Device Dissipation (s> Tc 25C (11

Derate above 25C

87.5

0,5

Watts

W/C

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristics

Thermal Resistance, Junction to Case

DIM

Rojc

(1) This device is designed (or RF operation. The total device dissipation rating applies

INCHES
MM

0570

0190
ow

0 025

0035

5 61

?.:

4U7

242

266

0095

283

333

0110

036

:::

tau

12 70

UJ?

: -:::

IIS
J. 83

139

0 045

0 065

533

: ::

0210

0120
0110

::-::

254

304

0 TOO

J?9
139

0045

0055

-:;

:??=

0255

:.-)

; got

0C45

115
592

115

: -,::

J04

CASE 221A-04
TO-220AB

2-670

::;

0 022

only when the device is operated as an RF amplifier.

MOTOROLA RF DEVICE DATA

MAX
0620

Symbol

max

102)

0050
-

00B0

MRF477

ELECTRICAL CHARACTERISTICS (Tc =25Cunless otherwise noted)

Characteristic

Symbol

Min

V(BR)CEO

Vdc

V(BR)CB0

Vdc

V(BR)EBO

4.0

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

He" 100 mAdc. Ib-01

Collector-Base Breakdown Voltage

(lC "100 mAdc, Ie"0)

Emitter-Base Breakdown Voltage

Vdc

(IE "5.0 mAdc, lc = 0)

Collector Cutoff Current

<CES

(VCE = 12.5 Vdc,VBE= 0, TC = 25CI

mAdc

ON CHARACTERISTICS
DC Current Gain

hFE

(lC 2.0 Adc. VCE - 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

175

250

<VCB = 12.5 Vdc, lE 0, f = 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

GpE

|VCC 12.5 Vdc, Pout = 40 W (PEP), f1 = 30 MHz.

f2 = 30.001 MHz, lCQ = 40 mAdc)
Collector Efficiency

(VCc = 12-5 Vd. pout 40 W (PEP), f1 = 30 MHz,

f2 = 30.001 MHz, lCQ 40 mAdc)
IMD (d3)

Intermodulation Distortion (1)

-35

(VCc = 12.5 Vdc, Pout - 40 W (PEP), fl = 30 MHz,

f2 - 30.001 MHz. ICQ - 40 mAdc)
(1) To Proposed EIA Method of Measurement. Reference Peak Envelope Power.

FIGURE 1-30 MHz TEST CIRCUIT

11T
D1J!
CB csjjl

'?
RF Input

T=**

jvno__, y

J
CI, C2, C4 - Arco 469, 190-780 pF
C3 - Arco 429, 90-400 pF
C5.C7 - 0.001 MF Disk Ceramic*
C6 - 500 liF 3.0 Vdc Electrolytic
C8 - 100 JiF 16 Vdc Electrolytic

LI - 4 Turns #16 AWO 1/3" ID, 1/3" Long

L2 - 3 Turns #16 AWG 1/3" ID, 1/2" Long
L3 L4 -

10 MH Molded Choke
12 Turns #18 AWG 1/4" ID

Besd R1 -

10 n

R2 B n

Farroxcuba #56-690-6S/3B

1.0 Watt Resistor

6.0 Won Raslitor

D1 -1N4719

Adjust Bias (Base) Voltaga for I^Q " 40 mA with no RF applied.

MOTOROLA RF DEVICE DATA

2-671

-30

MRF477

FIGURE 3 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 2 - OUTPUT POWER versus INPUT POWER

100

0.2

0.4

0.6
0.8
1.0
1.2
1.4
Pt. INPUTPOWER (WATTS)

1.6

1.8

8.0

2.0

VCc. SUPPLY VOLTAGE (VOLTS)

FIGURE S -

FIGURE 4 - POWER GAIN versus FREQUENCY

INTERMODULATION DISTORTION
versus OUTPUT POWER

."5 18

vCc- 12.5 V
'CQ-< 0 mA
pout" 40WP

5.0

7.0

FIGURE 6 - SAFE OPERATING AREA

5.0

2.0

1.0

S
o

ne
*

-*07
"'l .0

Pout. OUTPUT POWER (WATTS PEP)

f. FREQUENCY(MHt)

2 .0

VCE, COLLECTOR-EMITTER V0LTA6E1V0LTS)

MOTOROLA RF DEVICE DATA

2-672

100

LJECIVAOPLECIN1T

MRF477
i

FIGURE 7 - SERIES EQUIVALENT INPUT IMPEDANCE

WAvi
0.01

FIGURE 8 - OUTPUT CAPACITANCE versus FREQUENCY

FIGURE 9 - OUTPUT RESISTANCE versus FREQUENCY

fWIU

g "
t-

lCQ"40 mA
Pout-40WPEP

| 4500
o

lCQ*40 mA

r p0ui*-iow p
<
"

0
5.0

7.0

5.0

f, FREQUENCY (MHt)

7.0

I. FREQUENCY(MHi)

MOTOROLA RF DEVICE DATA

2-673

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF479

The RF Line
15 W (PEP). 15 W (CWJ-30 MHz

RF POWER
TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON

... designed primarily for use in single sideband linear amplifier

output applications and other communications equipment oper
ating to 50 MHz.
Low-Cost, Common-Emitter TO-220AB Package
Specified 12.5 V, 30 MHz Performance

Output Power = 15 W (PEP) or (CW)

Power Gain = 12 dB Min

Efficiency = 40% Min

Intermodulation Distortion @ 15 W (PEP)
IMD = -30dB(Max)

30:1 VSWR Load Mismatch Capability at Rated Output Power

and Supply Voltage

Characterized from 2.0 to 50 MHz

MAXIMUM RATINGS
Rating

Symbol

Value

Collector-Emitter Voltage

VCeo

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

Unit

VEBO

4.0

Vdc

Collector-Current Continuous

2.0

Adc

Total Device Dissipation @ Tq = 2SC (1)

30
0.17

Watts

mW/C

Tstg

-65 to +150

Derate above 2SC

Storage Temperature Range

STYLE 2:
PIN 1. BASE

2. HOTTER

3. COLLECTOR
4. EMITTER

NOTES.
I. OOttNSIONaG AND TOUMNONG PES ANSI
Y14.SM. 1982.
2 CONTROLLING OaSNSON: INCH.
J DIMZ DEFINESAHWE WHERE All BODY AND
LEADH1EGUAKTES ARE ALLOWED

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case (2)

Symbol

Max

Unh

R0JC

5.85

C/W

14 4S

t
C

66
407

P
F

g
H

(1) This device is designed for RF operation. The total device dissipation rating applies
only when the device is operated as an RF amplifier.
(2) Thermal Resistance is determined under specified RF operating conditions by infrared
measurement techniques.

MUSWTBB
MM
MAX
IS 75

MO KES

MM
0570
0383

0*35

01(0

01SO

4M
OR

ops

Ml
242

3*?
*

0142

0147

2S3
036
12.70

0.105
01

M-;

OSM

OS62

ifl

0045
0190

0055
02t0

3 S3
055

0110
0014

1.15
4 S3

S33

Q
"1

2M
204

J(*

0.I0O

IIS

9(
PW

T
M
V
i

SS7
000
us

S47

0735

U7
_

0W5

204

CASE 221A-04
TO-220AB

MOTOROLA RF DEVICE DATA

2-674

OS20

ton

0022

0120
oito

aoss
0355
0050
_

oew

MRF479

ELECTRICAL CHARACTERISTICS (Tc- 25C unlessotherwise noted)

Characteristic

Symbol

Min

V(BR)CEO

Vdc

Collector-Emitter Breakdown Voltage

dC = 20 mAdc, Vbe = 0)

V(BR)CB0

Vdc

Emitter-Base Breakdown Voltage

V(BR)EB0

4.0

Vdc

Typ

Max

UnH

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

dC = 20 mAdc. Ip, = 0)

dE = 5.0 mAdc. \q-0)

Collector Cutoff Current

CES

(VCB=15Vdc.lE = 0)

5.0

mAdc

ON CHARACTERISTICS

1 DC CurrentGain

hcE

(lC =500 mAdc. VCE"= 5.0Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

(VcB = 25 Vdc, Ie = 0, f = 1.0MHz)

125

155

FUNCTIONAL TESTS (SSB)

Common-Emitter Amplifier Power Gain

GpE

(VCC= 12.5 Vdc. Pout = 15 W (PEP), f = 30 MHi,

1*2 = 30.001 MHz, lCQ = 20 mA)
Collector Efficiency

(Vcc = 12-6 Vdc, Pout = 15 W (PEP), f, = 30 MHz,

f2 = 30.001 MHz, lCQ = 20 mA)
Intermodulation Distortion (1) (PEP)

<-3

(VCc = 12.5Vdc,'Pout = 15 W(PEP), f, =30 MHz,

-30

f2 = 30.001 MHz.ICq = 20 mA)

(1) To proposed EIA method of measurement. Reference peak envelope power.

FIGURE 1 -

30-MHz COMMON EMITTER TEST CIRCUIT

'Bias Input SVW

$y m

^ RF Output

RF Input \

CI, C2, C4 - 469 Arco 170-780 pF

426 Arco 37-250 pF

C3 CS -

500 UF, 3.0 V

L3 -

10*iH Molded Choke

L4 -

12 Turns #18 AWO 0.25" ID X 0.75"

R1 - ion, LOW
R2-6.0n, 6.0 W

C6, C7 0.1 ftF Erie Redcap

C8 - 0.01 flF Erio Redcap
C9- 100 *iF, 16 V

Bead Ferroxcube Bead #S6-590-66/3B

L1 - 4 Turns #18 AWO 0.3" ID X 0.25"

D1 -

L2 -

1N4997

6 Turns #16 AWG 0.35" ID X 0.9"

Adjust Bias (Base) Voltaga for Icq - 20 mA with no RF applied.

MOTOROLA RF DEVICE DATA

2-675

12.5 Vdc

MRF479

FIGURE 2 - OUTPUT POWER versus INPUT POWER

FIGURE 3 - POWER GAIN versus FREQUENCY

1
1
VCC-12.5 V
lCQ*20 mA
Peut* 15W

30 MHt

n
SOMHi

|
|

VCC"1"V
'CO.- 41mA

0.4

0.6

0.8

1.0

1.2

5.0

1.4

FIGURE S - INTERMODULATION DISTORTION versus

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

I, FREQUENCY (MHi)

P:n.INPUT POWER (WATTSI

OUTPUT POWER

1 1

vcc -12.5 V

_l 30,30.001 MHi
IM0(d3l -35dB

1-30.30.001 MHi

'CO.

2 -40

9.0

4.0

VCc.SUPPLY VOLTAGE (VOLTS)

8.0

Pout.OUTPUT POWER (WATTS PEP)

FIGURE 6 - OUTPUT CAPACITANCE versus FREQUENCY

FIGURE 7 - OUTPUT RESISTANCE versus FREQUENCY

3 3500

VCc
""'CO 20

< 3000
fc

VCc-125 V
lCQ-20 mA
pout

| 2500
K
t-

1500

| 1000
o

5
5.0

3.0
1.0

f. FREQUENCY(MHi)

5.0

f, FREQUENCY (MHr)

MOTOROLA RF DEVICE DATA

2-676

11
""
-"

MRF479

FIGURE 8 -

SERIES EQUIVALENT INPUT IMPEDANCE

FIGURE 9-30 MHz TEST AMPLIFIER

VCC- 12.5Vdc
lCQ-20mA
P,'I5WPEP
1

zin

MHz

Ohms

50
3D

2.35 -jO.7
3.0-jl.9
4.8-J3.1

15
7.5
.'0

7.9-J4.1
U-1-1.7

FIGURE 10 - TEST AMPLIFIER PCB PHOTOMASTER

NOTE: Points A. A' and B. B' aro connected via 50 SI coaxial cablo under the PCB.

The Printed Circuit Board shown is 75% of the original.

MOTOROLA RF DEVICE DATA

2-677

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF485

The RF Line
15 W (PEP) - 15 W (CW) - 30 MHz

NPN SIUCON RF POWER TRANSISTOR

RF POWER

TRANSISTOR

... designed primarily for use in single sideband linear amplifier

output applications and other communications equipment oper

NPN SILICON

ating to 30 MHz.

Characterized for Single Sideband and Large-Signal Amplifier

Applications Utilizing Low-Level Modulation
Specified 28 V, 30 MHz Characteristics
Output Power = 15 W (PEP)
Minimum Efficiency = 40% (SSB)
Minimum Power Gain = 10 dB (PEP & CW)

Common-Collector Configuration

MAXIMUM RATINGS
Rating

Symbol

Value

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

vCBO
VEB0

Vdc

4.0

Vdc

1j0

Adc

Emitter-Base Voltage
Collector Current Continuous

Total Device Dissipation <s> Tc 50C (11

Watts

0.3

W/C

Tstg

-65 to+150

Symbol

Max

Unit

RjJC

3.33

C/W

Derate above 50C

Storage Temperature Range

Unit

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

(1)This device is designed for RFoperation. The total devicedissipationratingapplies

STYIE I

only when the device is operated as an RF amplifier.

FIN 1 BASE

2 COUECTOR
3 EMITTER

NOTES

40l,Uei0"

1. DIMENS10KNG AND TOIERANCNG PERANSI

FIGURE 1 - COMMON-EMITTER TEST CIRCUIT

RFC3

VU5M. 1982

2 CONTROUING DIMENSION INCH

1 OOI Z DERttS A ZONEWHEREAll 600V AND
LEADtRREGUUKTfS ARE AUOtttO

DM
A

R<=i>

C1, 2. S - ARCO 466 Trimmer Capacitor!

R1 -

RFC1 - 10H Molded Choke

RFC2 - 0.84 pH Molded Choke
RFC3 - 2 Ferrokcube. #56 590-65/38.
Bead* on #18 AWO Wire

IO!). BO Witt Rettltor

R2- 10(1. 1.0 Watt Retittor

01 -

1N4997

0405
0190

9
un
OH

4*2
on

161

2*2
ISO

2-W
WJ

OJS
12-70

1427

06W

C3 - 1000 (IF. 3.0 Vdc Electrolytic

C4. 7 - 0.1 pf. DlK Ceramic!
CS - 100 pF. IS Vdc Electrolytic

MAX
OHO

e
C
D

LI 2.2 ||H Molded Choke

L2 - 7 Turm 1B AWG Wire. 3/B" 1.0.

MO s

MW
0570

i*?5
10.J8

*Ad{utt for tQ - 20 mA

MUMET0B
MAX

MM
14*1

056

0163
0075
0142

OHM
0147

0095

0105

0110

0155
0022
0*2

0014

I
N

'
5?3

oots
0190

0710

254

304

OIpO

to*

0120
0110

115

?>?

S
1

115
S97

US
647

0235

Off}

00M

1.15

COM
0O5

0045

CASE 221A-04
TO-220AB

MOTOROLA RF DEVICE DATA

2-678

0055

0080

0055

oon

MRF485

ELECTRICAL CHARACTERISTICS (Tc- 2SC unless otherwise noted)

Characteristic

Symbol

Min

V(BR)CE0

V(BR)CES

Vdc

V(BR)EB0

4.0

Vdc

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC = 20 mAdc, lB - 0)
Collector-Emitter Breakdown Voltage

(lC = 50 mAdc. VBe ' 0)

Emitter-Base Breakdown Voltage

(IE "5.0 mAdc, lc = 0)

Collector Cutoff Current

'CBO

(VCB = 25Vdc,lE-0)
Collector-Cutoff Current

>CES

(Vce 28 Vdc, VBE - 0)

Vdc

1j0

mAdc

5.0

mAdc

100

ON CHARACTERISTICS
DC Current Gain

"FE

(lC 500 mAdc. VCE 5j0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

C0b

(VCB- 28 Vdc, lE - 0, f = 1.0 MHz)

FUNCTIONAL TESTS (SSB)

Common-Emitter Amplifier Power Gain

Gpe

(Vcc " 28 Vdc, Pout - 15 W (PEP. fl - 30 MHz,

f2 - 30.001 MHz, lCQ " 20 mA)
Collector Efficiency

(VCc 28 Vdc, Pout - 15 W (PEP), f1 - 30 MHz,

f2 - 30.001 MHz, lCQ - 20 mA)
Intermodulation Distortion (1)

'MD(d3)

-35

-30

(Vcc " 28 Vdc, Pout - 15 W (PEP), f 1 - 30 MHz,

f2 - 30.001 MHz, lCQ - 20 mA)
Load Mismatch

No Degradation in Output Power

(VCC - 28 Vdc, Pou, = 15 W (PEP), fl - 30 MHz,

f2 - 30.001 MHz, VSWR - 30:1 All Angles)

(1) To MIL-STD-1311 Version A. Test Method 2204B, Two Tone, Reference Each Tone.

FIGURE 3 -

FIGURE 2 - OUTPUT POWER versus INPUT POWER

f"30MH<

ICO" 20 ">*

lCQ 20mA

VCC - 28Vdc
-__

INTERMODULATION DISTORTION
versus OUTPUT POWER

VCC-13

6 Vdc

.-"" '"'

**"'
**"

^*"
0.4

0.8

1.2

4.0

Pin. INPUTPOWEfl(WATTS)

B.O

Pout.OUTPUT POWER (WATTS PEP)

MOTOROLA RF DEVICE DATA

2-679

MRF485

FIGURE 5 - OUTPUT CAPACITANCE versus FREQUENCY

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

2000

VCC" 28 Vdc
'CO* 20 mA
Pout*

70 mA

f-30,30.001 MHz
IMD. d3--35 do

2t
SJ< 800

5.0

Vcc.SUPPLY VOLTAGE (VOLTS)

FIGURE 7 - POWER GAIN versus FREQUENCY

FIGURE 6 - OUTPUT RESISTANCE versus FREQUENCY

too

7.0

I. FREQUENCY (MHi)

1
1
VCC-28 Vdc
lCQ*20mA

~~T1 T
VCC "28 Vdc
lCQ* 20 mA
pout" 15WPEP

potl " " " '

P
laso

5.0

7.0

1.5

2.0

3.0

5.0

7.0

I, FREQUENCY (MHz)

f. FREQUENCY (MHi)

FIGURE 8 - SERIES EQUIVALENT INPUT IMPEDANCE

MOTOROLA RF DEVICE DATA

2-680

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF486
The RF Line
NPN SILICON RF POWER TRANSISTOR
40 W (PEP) - 30 MHz

...designed primarily for application as a high-power linear

amplifier from 1.5 to 30 MHz, in single sideband mobile, marine
and base station equipment.
Low-Cost, Common-Emitter TO-220AB Package
Specified 28 Volt, 30 MHz Performance
Output Power = 40 W (PEP)

RF POWER
TRANSISTOR
NPN SILICON

Power Gain = 15 dB Min

Efficiency = 40% Min

Intermodulation Distortion @ 40 W (PEP)
IMD = -30dB(Max)

30:1 VSWR Load Mismatch Capability at Rated Output Power

and Supply Voltage

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

VebO

4.0

Vdc

Collector Current -

Continuous

3.0

Adc

6.0

Adc

87.5

Watts

0.5

W/C

Tstg

-65 to+.150

Symbol

Max

Unit

Rff JC

2.0

C/W

Withstand Current

rzn

(t - 5.0 s)

Total Device Dissipation @ Tc " 25C (1)

Derate above 25C

Storage Temperature Range

...

i ,j

THERMAL CHARACTERISTICS
Characteristics

Thermal Resistance, Junction to Case

(1) This device is designed for RF operation. The total device dissipation rating applies
only when the device is operated as an RF amplifier.
BASE
EMITTER
COUECTOft
EMITTER

NOTES:

RGURE 1 30 MHz TEST CIRCUIT

1 OCMINSOKNG AND TOUMNCmG PER ANSI

Output

Y145M. 15*2
2 C0OTR0UMG OWENSON MCM
3 OtM 2 DEFINESA 2.0NE WHEREALL BODYAND
lAD KtEGUAKTSS ARE AUOYKD
MO KES
MAX
0M0

WUWETWS

CI. C2 Arco 469. 190-780 pF

C3 150 pF ELMENCO"
C. C5 Arco 429.90-400 pF
CS. C9 0.001 pf Disc Ceramics
C7 500 (iF. 3.0 Vdc Electrolytic
CB 50 pf, 50 Vdc. Electrolytic

M
R2
LI
12
13

10 (1. 1.0 Watl Resistor

5.011. 5.0 Watt Resistor
0.15 pH Molded Choke
7 Turns. #16 AWG Enameled Close-Wound. 1/2' ID
10 mH Molded Choke

L4 1.9 pH Molded Choke

One Bead #66-590-65/38 (Ferroxcube or equiv.l
Dl 1N4997

MAX

14.41

IJ 75
'Off

0570

407
0

3.61

24J

H
J

J S3

033?
OIK)

0190

0025

0035

014J

0.147

0105

0.110

0.155

Ofll

OSS

POM

12.70

14.27

1.15

0055

'
5JJ

0500
eo*s

0.199

0210

"Type MCM01/010 or UNELCO 3 KS 0006.

2S4

30*

pioo

204

?t
'

009}

aito

1.11

5S7

l-fl

0.00

(tots
J2J5
pw

115

l}7

2-681

0.120

0255

0050

0045

JO*

TO-220AB

MOTOROLA RF DEVICE DATA

0.552

s
t

CASE 221A-04

'Adjust Bias (Basel Voltage lor IcQ - 40 mA with no RF applied.

0405

on
m
i#

0-W

MRF486
ELECTRICAL CHARACTERISTICS <TC - 25Cunless otherwise noted)

Characteristic

Symbol

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CE0

V(BR)CES

Collector-Base Breakdown Voltage

dc" 50mAdc, Ie =0)

V(BR|CB0

Vdc

Emitter-Base Breakdown Voltage

V(BRIEBO

4.0

Vdc

(IC"50mAdc. IbdO)
Collector-Emitter Breakdown Voltage

Vdc

(lC " 50 mAdc, Vgg - 0)

(lc: -5.0 mAdc. lc " 0)

Collector Cutoff Current

'CES

(VCE 28 Vdc, VBE =0, TC - 25C)

mAdc

ON CHARACTERISTICS
DC Current Gain

"FE

(lC - 2.0 Adc, Vce " SO Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

200

130

(Vcb " 27 Vdc, lE - 0, f - 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

GpE

17.5

(Vcc " 28 Vdc, Pout = 40 W (PEPI. f1 = 30 MHz,

f2 - 30.001 MHz, lCQ - 40 mAdc)
Collector Efficiency

(VCc " 28 Vdc, Pou, = 40 W (PEP), f1 = 30 MHz,

f2 - 30.001 MHz, lCQ - 40 mAdc)

IMD(d3l

Intermodulation Distortion (1)

-35

-30

(VCc " 28 Vdc, Pout =40 W (PEP), fl =30 MHz,

f2 30.001 MHz, lCQ - 40 mAdc)
(11 To MIL-STD-1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
FIGURE 2 - OUTPUT POWER versus INPUT POWER
70

f- 31)UHz

'ro

40 mA
c

VCC-13.6 Vdc
S

i 40
3

J "
*

Pin.INPUT POWER (WATTS)

FIGURE 3 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 4 -

POWER GAIN versus FREQUENCY

Vcc-28Vdc

1-3 3,30.001 MM,

IMD

d3> -3!

CO.

l 40
S

5.0

Vcc. SUPPLY VOLTAGE (VOLTSI

7.0

I. FREQUENCY(MHz)

MOTOROLA RF DEVICE DATA

2-682

lCQ-40mA
pt ..^nuipco

MRF486
FIGURE 5 -

INTERMODULATION DISTORTION
FIGURE 6 - SAFE OPERATING AREA

versus OUTPUT POWER

vcc

28 Vd

< - 30.30.001 MHi

%
bu
<

"s,

2.0

TC-25C

^
d

0-5

_CJ

0.1
10

1.0

Pout. OUTPUT POWEH (WATTS PEP)

2.0
5.0
10
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

100

FIGURE 7 - SERIES EQUIVALENT INPUT IMPEDANCE

FIGURE 9 - OUTPUT RESISTANCE versus 1 REQ JENCY

FIGURE 8 - OUTPUT CAPACITANCE versus FREQUENCY

5000

Vcc 28 Vdc

vrt - 28 Vdc
ico -40 mA
Pou

12
2*
_, O

UJ <

iB.O

4.0

5.0

7.0

5.0

7.0

f. FREQUENCY (MHi)

f. FREQUENCY (MHr)

MOTOROLA RF DEVICE DATA

2-683

40 mA

MOTOROLA

SEMICONDUCTOR

MRF492
MRF492A

TECHNICAL DATA

The RF Line

70 W

50 MHz

RF POWER
TRANSISTOR
NPN SILICON

NPN SILICON RF POWER TRANSISTOR

... designed for 12.5 volt low band VHF large-signal power amplifier
applications in commercial and industrial FM equipment.
Specified 12.5 V, 50 MHz Characteristics
Output Power = 70 W
Minimum Gain = 11 dB

Efficiency = 50%

Load Mismatch Capability at High Line and

RF Overdrive

nous
t DaaNsOMNGwoTouuNoacn*
M9TUW.IM)
i axmouNGOMNSiON mch

STYUI
m i Euro*

1 tut
i Eumu
4 COUUTOD

MAXIMUM RATINGS

Symbol

Value

Unit

VcEO

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

Vdc

Rating
Collector-Emitter Voltage

in
ta
u

H
Oil

news
in
MB

in
t
t

0I
J ID

0271

om
1W

OTO

out
(IO

jits

ots 1 -

CASE 211-11
MRF492

NUMTtHS
MM
MU
J4
Zilt
tin
tin
it)
IN
S4I
SH
2M
It

lOM
OttS
ow

ow
0H6

vEBO

4.0

Collector-Current Continuous

Adc

Total Device Dissipation @ Tq = 25C (1)

250
1.43

Watts
W/C

Tstg

-66 to+150

Symbol

Max

Unit

NOTES:
i oaoNsansMOTCUMNCHa

fyjc

0.7

c/w

hums rt4SM.no.
I CONTWUMGnaNSOX: MH

Derate above 25C

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case (2)

(1) These devices are designed for RF operation. The total device dissipation rating
applies only when the devices are operated as RFamplifiers.
(2) Thermal Resistance is determined under specified RF operating conditions by
infrared measurement techniques.

CM
*

STVUI.
mi.aimii
tua

ltKTTEK
4.O3UKT0II

S
e
0

1
i

u*
in

l
N

CASE 145A-10
MRF492A

MOTOROLA RF DEVICE DATA

2-684

HUWCTSO
tux
MM
s
>M*
ton
1M
an
KM
1*7
S4i
in

Oitt

J
uis

cm
0J

JEL
MO)

too

o-nom

MO a

127

osn
tm
4TN0M
COM

OJO

4 S3

out

J11

tKO

?*
P

UN
0177

MRF492, MRF492A

ELECTRICAL CHARACTERISTICS <TC = 25C unless otherwise noted)

Characteristic

| Symbol |

Min

V(BR)CE0

V(BR)CES

V(BR)EB0

4.0

Typ

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

dC = 100 mAdc, Ifl = 0)

Collector-Emitter Breakdown Voltage

Vdc

(lC = 50 mAdc, Vbe = 0)

Emitter-Base Breakdown Voltage

lE= 10 mAdc. lc = 0)
Collector Cutoff Current

>CES

Vdc

mAdc

(VC=13.6 Vdc, Vbe = 0)

ON CHARACTERISTICS
DC Current Gain

"FE

150

dC= 5.0 Adc, VCE= 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

C0b

275

450

(Vcb = 15 Vdc, !E = 0. f = 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

Gpe

(Vcc = 12.6 vdc- pout =70 W, f =50 MHz)

Collector Efficiency

IVcc = 12-6 Vdc, Pout =70 W, f = SO MHz)

FIGURE 1 - 6 0 MHz TEST CIRCUIT

-< 12.6 Vdc

Jff Q-< RF Output

RF Input >

CI. C8 9.0-180 pF. Arco 463

RFC2 12 Turns, #16 AWG, Enameled Wire Closewound

C2. C3. C4 80-480 pF. Arco 466

on a 2 W Carbon Resistor

C5 1000 pF. 350 V, Unelco

C6 10 pF, 25 Vdc
C7 0.01 fF. Ceramic
RFC1 1014 H Molded Choke

LI 2 Turns, #18 AWG Enameled Wire. 0.4' ID.

0.15" Long
L2 Loop, #12 AWG Wire. 0.6' High, 0.4' Wide
L3 2 Turns. #12 AWG Wire. ID 0.4'. 0.25' Long
Bead Ferrite Bead Ferroxcube #56-5S0-65/3B

MOTOROLA RF DEVICE DATA

2-685

'if

'**

p
ba

So g.

~ 3
ca cT

3 =

o_L

:::~[:Xa--3_m

___UX+___XXXi
r V i\"

::]:m:::i:

Pout. OUTPUT POWER (WATTS)

jj- en

-o

Gp. POWER GAIN (dB)

Potrt. OUTPUT POWER (WATTS)

ID
IO

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF497

The RF Line
40 W

IMPIM SILICON RF POWER TRANSISTOR

50 MHz

RF POWER
TRANSISTOR

... designed for 12.5 volt VHF large-signal power amplifier appli
cations in commercial and industrial equipment, operating in the
25 to 50 MHz frequency range.

NPN SILICON

Low-Cost, Common-Emitter TO-220AB Package

Specified 12.5 V, 50 MHz Performance

Output Power = 40 Watts

Power Gain = 10 dB Min

Efficiency = 60% Min

Load Mismatch Capability at Rated Voltage and RF Drive

MAX/MUM RATINGS

Rating

Symbol

Value

Unit

Colleclor-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

vEBO

4.0

Vdc

Collector-Current Continuous

6.0

Adc

Total Device Dissipation @ Tq = 25C (1)

87 5

Watts

mW/C

Tstg

-65 to '150

Symbol

Max

Unit

Rmjc

2.0

C/W

Derate above 25C

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case (2)

(1) This device is designed (or RF operation. The total device dissipation rating applies
only when Ihe device is operated as an RF amplifier.

STYLE 2
PIN 1 BASE
2 EMITTER

12)Thermal Resistance is determined under specified RF operating conditions by infrared

measurement techniques.

3 COLLECTOR

NOTES

4 EMII7ER

: .',:

'.,: -.: >:.-;.: \

V145M. 1982
2 CONTROLLING OVENS'ON Mm
3 DIM2 DEIINES A ZONE WHEREAll BOO' AND
LEADIRREGULARITIES ARE ALLOWED

FIGURE 1 50 MHz TEST CIRCUIT

tVM

C2. C3 Arco 466

C5 100 jiF. 16 Vdc Electrolytic

C6 0.001 iif Disc Ceramic

MIN ' MAX

14 48

966

10 23

482

Rl 10(1. 1 0 Watt Resistor

LI 3 Turns 14 AWG Wire. 1 3" ID

064

L2 1-V2 Turns #14 AWG Wiro. VT ID

3L_

:::

280

13 14 Tumi 18 AWG Wire I 4" ID

INCHES

M-ILIMETERS

vcc

Cl Arco 469

OSS

MIN

0620 1

0 3K

0405

: :-:

0190 ,

o o;s
3I4J

OIK

3 93

0110

0151
: .-::

036

OSS

0014

12 70

14 27

0 K0

139
1 IS
413 i_ S33

0 IK

2S4

!C4

oi:c

C 'JO

;::

; :

::-;:

0110

139
647

OMS

1.15
S97

023S

::;;

c .::.

127

ocro

ooso

11S
-

:::'.

C MS

204

18 AWG Wire

CASE 221A-04

Board Material Epoxy Fiberglass. 0 062~ thick

TO-220AB

MOTOROLA RF DEVICE DATA

2-687

266

' S!

K
L

B Forroxculio #56 490G53B

MAI

0520

RFCl RF Choke Ferroxcube VK200-204B

RFC2 3 Ferroxcubo. 55-590-65 3B. Beads on

= = ,;

0210

0 055

0080

MRF497
ELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted)

Typ

Max

Unit

Symbol

Min

Collector-Emitter Breakdown Voltage

0C= 100 mAdc. lfj = 0)

V(BR)CEO

Collector-Emitter Breakdown Voltage

V(BR)CES

Vdc

V(BR)EBO

4.0

Vdc

"FE

Characteristic

OFF CHARACTERISTICS
Vdc

dC = 20 mAdc. Vbe = 0)
Emitter-Base Breakdown Voltage

(lE = 10mAdc. IC = 0)
ON CHARACTERISTICS
DC Current Gain

dC = 1.0 Adc. Vce = 50 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

250

(VCB = 15 Vdc. IE = 0. f = 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

Gpe

11.2

(VCc = 12.5 Vdc, Pout = 40 W. f = 50 MHz)

Collector Efficiency

(Vcc = *2-5 Vdc. Pout = 40 W. f = 50 MHz)

FIGURE 2 - POWER GAIN versus FREQUENCY

FIGURE 3 - OUTPUT POWER versus NPUT POWER

70
_

I M
50 MHz

1 40
a.

Vcc =5V
Pout=4"W

2 30
o

| 20
10

T
u

0
30

2.0

I. FREQUENCY(MHz)

3.0

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

50 MHz
70

3.0 W

2.0 W

30
a.

4.0

5.0

Pin.INPUT POWER (WATTSI

- 10
0

1.0

VCc.SUPPLY VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-688

MRF497

FIGURE 5 SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES

FIGURE 6 TEST AMPLIFIER PCB PHOTOMASTER

NOTE: Points A, A' and B, B' uro connoctod vin 50 il coaxial cable undor tho PCB.

The Printed Circuit Board shown is 75% of the original.

MOTOROLA RF DEVICE DATA

2-689

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF501
MRF502

The RF Line
HIGH FREQUENCY
TRANSISTORS

NPN SILICON HIGH-FREQUENCY TRANSISTORS

NPN SILICON

. . . designed primarily for use in high-gain, low-noise amplifier,

oscillator, and mixer applications. Can also be used in UHF converter
applications.

High Current-Gain - Bandwidth Product -

Low Noise FigureNF = 4.0 dB (Typ) @ f = 200 MHz

fj = 1.2 GHz (Typ) @ lc = 5.0 mAdc

STYIE10
PIN 1 EMITTER
2BASE
3 COLLECTOR

MAXIMUM RATINGS

Rating

Symbol

Collector-Emitter Voltage

vCEO

Collector-Base Voltage

VCBO

Emitter-Base Voltage

VEBO

Collector Current

Total Device Dissipation @TA =25C

Derate above 25C

Storage Temperature Range

Tstg

MRF502

MRFS01

Vdc

4 CASE

Unit

Vdc

3.5

Vdc

mAdc

200 .

1.14

mW/C

-65 to +200

-IU-0
NOTE.ALLRULESANDNOTESASSOCIATED WITHTO 72
OUTLINE SHALLAPPLY

DM
A
8
C
0
E
F

MUMETERS
MAX
584
UI
452
495
432
533
041
053

KIN

076

041
048
254 BSC

091

117

071

122

1270

635

KAX
0230

0I7S

0195

0170

0210

0016

1 127

0016

MOTOROLA RF DEVICE DATA

2-690

0019

0100 BSC

0036 1 00(6
0023 1 0048
0500

0250 1 45 BSC
0050 BSC

CASE 20-03
TO-206AF

(TO-72)

0021
0030

45" BSC
1.27 BSC

M
t

INCHES
KIN
0209

i 0050

MRF501, MRF502
ELECTRICAL CHARACTERISTICS (TA =25C unlessotherwisonoted)
Typ

Symbol

Characteristic

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage

Vdc

V(BR)CEO

(lc-3.0 mAdc, lB = 0)

Collector-Base Breakdown Voltage

MRF501

dC= VOuAdc, l =0)

V(BR)CBO

Vdc

MRF502

Emitter-Base Breakdown Voltage

Vdc

V(BR|EBO

(lE = 1.0uAdc, lc = 0)

3.5

Collector Cutoff Current

MRF501

(VCB = 1.0 Vdc, Ie = 0)

CBO

MRF502

nAdc

ON CHARACTERISTICS
MRF501

OC Current Gain

|lc1.0mAdc, VCE 60 Vdc)

hFE

MRF502

250

170

DYNAMIC CHARACTERISTICS
Current Gain Bandwdith Product

MRF501

(lc = 5.0 mAdc, VCE - 6.0 Vdc, f - 100 MHz) MRF502

Collector-Base Capacitance

1000

800

1200

MHz
_

Ccb

(Vcb - 10 Vdc, lE = 0, f =0.1 to 1.0 MHz)

0.6

Collector-Basa Time Constant

fb'Cc

(lE 2.0 mAdc, Vcb " 6.0 Vdc, f = 31.8 MHz)

Noise Figure

600

(Figure 1)

MRF501

(1c 1.5 mAdc. Vce = 6.0 Vdc,

Rs - 50 ohms, f 200 MHz)

8.0

4.5

MR F502

4.0

FUNCTIONAL TEST

Gpe

Common-Emitter Amplifier Power Gain (Figure 1) MRF501

(VCc " 6.0 Vdc, lc = 5.0 mAdc. f = 200 MHz) MRF502

FIGURE 1-200 MHz AMPLIFIER POWER GAIN

AND NOISE FIGURE CIRCUIT

a
COMMONl||

>f?
-r*

Jj200 I
JJ200

ln ..-C
.-l= I

SOURCE a(? s{ L)
"=

4J 4-nrwJ
-,nrvv^-1

l0AD

\\* /~\

UISH'UO I .^...T

3.0-35O. 20-IoZL

t-M

j\~'

I 0001MF

VCC

0.1 pf

LI 13/4Turns.#18 AWG.0.5" Long,0.5" Diameter

L2 2 Turns. #16 AWG, 0.5" Long.0.5" Damcttr
L3 2 Turns. #18 AWG, 0.25" Long,0.5" Diameter, PositionApprsximtltly 0.25" from L2

MOTOROLA RF DEVICE DATA

2-691

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF511

The RF Line
HIGH FREQUENCY
TRANSISTOR

NPN SILICON HIGH FREQUENCY TRANSISTOR

NPN SILICON

. . . designed specifically for broadband applications requiring low

distortion characteristics and noise figure. Specified for use in
CATV applications.
Specified -t-50dBmV Output, 80 mAdc Distortion Characteristics
Triple Beat = -65 dB (Max)
Cross Modulation = -57 dB (Max)
Second Order = -50 dB (Max)

High Broadband Power Gain -

Gpe= 10 dB (Min) @f = 250 MHz

Low Broadband Noise Figure
NF = 10 dB (Max) @ f = 200 MHz

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage

Symbol

Value

VCEO

Vdc
Vdc

Unit

Collector-Base Voltage

VCBO

Emitter-Base Voltage

VEBO

3.5

Vdc

Collector Current Continuous

250

mAdc

Total DeviceDissipation @Tc =25C

Derate above 25C

Storage Temperature Range

Tstg

Stud Torque'1'

5.0

Watts

28.6

mW/C
C

-65tO+150

In. Lb.

6.5

(1) For Repeated Assembly use 5 In. Lb.

STYLE I:
FIN I EMITTED

2. BASE
3 EMITTER
4 COLLECTOR

RGURE 1 40 to 330 MHz BROADBAND TEST CIRCUIT SCHEMATIC

CIRCUIT KRMMMNCt
U.K

vt, j

"> ':

]: >

Inpvt/Oircoul Rflwm LM
FtatrWM

0.3 at

1(51

OE00

0650

086
165

0026
0055

0065

0.10

J74

li
U
L3

>Tun.raoAwa. vt-i o. aj-ton,

i m , ckm. millik
tt Twin. *34 AWO f iwmm, 4A pmmm TarrM Cora

S TiMM. MO AWO. t/W IO.. O.SS" LM*

'nnoxcuu

imito*4c>

at
i
m
4

4.7 n. i/w. io
a n. iw. 10*
nn.iw.iM
300 n. imw. tint.

0060

\XI

0.050
0132

140

i
178

0.103
0055

turn

232

1SS

0115

0145

CASE 244A-01

2-692

0006
0004
04(0
45* NOM

Ifkwl/0w9<rt CwniMCWI - Tva* *

Z . - 7SOMM

MOTOROLA RF DEVICE DATA

0.034

45* NOM

aoanrcwMtoi*
BWU pF JOHANSON 4>0>

p.tt

1117

wmouhi

ci.c3.c4.ct.c
a

MAX
0786
0256

IO<(

MM0.

WOKES
MM
0278
0744

1U4

140
IH

Typ

WUMETERS
MAX
70S
776
620
6.50

MRF511
ELECTRICAL CHARACTERISTICS (Tc 25C unleu otherwise noted.)
Characteristic*

| Symbol |

Min

V(BR)CEO

V(BR)CB0

| Typ

| Max ~|"

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

(lc-5.0 mAdc, Ib-0)

Collector-8sse Breakdown Voltage

Vdc

(lc-100*Adc, lE-0)

Emitter-Base Breakdown Voltage

Vdc

3.5

V(BR)EBO

(lE-100uAdc. lc-0)

Collector Cutoff Current

100

ceo

;iAdc

(VCE-16Vdc,lB-0)
ON CHARACTERISTICS
DC Current Gain

"FE

200

0.2

0.5

(lC - 80 mAdc, VCE - 10 Vdc)

Collector-Emitter Saturation Voltage

vCE(sat)

Vdc

(lC - 100 mAdc, lB 10 mAdc)

DYNAMIC CHARACTERISTICS

Currant-CainBandwidth Product

1.5

2.1

GHz

(lC - 80 mAdc, Vce - 20 Vdc. f - 200 MHz)

Output Capacitance

Cob

3.2

4.5

7.3

(Vcb " 20 Vdc, lE - 0, f - 1.0 MHz)

Noise Figure

(lC - 50 mAdc, Vce " 20 Vdc, f - 200 MHz)

FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain
2nd Order Intermodulation Distortion

Gp.

IVCE - 20 Vdc, lc - 80 mAdc, f - 2S0 MHz)

IMD

-50

12ChnXMD

-59

-57

30 Chn XMD

-46

-68

(Vce - 20 Vdc, lc - 80 mAdc, Vgu, - +50 dBmV,

Chn 2 + Chn 13 - 266.5 MHz)
dB

Cross-Modulation Distortion

(VCe " 20 Vdc. Vout - +50 dBmV. Ic - 80 mAdc)

Chn 13
ChnR

Triple Beat

-65

(Vce " 20 Vdc, lc - 80 mAdc, Vou, - +50 dBmV,

Chn 2 + Chn 3 + Chn E - 261.75 MHz)

FIGURE 3 - OUTPUT CAPACITANCE

FIGURE 2 - CURRENT-GAIN-BANDWIDTH PRODUCT

5oo
3

V( E 20

S2000

f "00
z

| 400
"

n
40

100

120

140

160

180

200

4.0

lC. COLLECTOR CURRENT (mA|

8.0

Vcb. COLLECTOR BASE VOLTAGE (VOLTSI

MOTOROLA RF DEVICE DATA

2-693

MRF511

FIGURE 4 -

INPUT CAPACITANCE

FIGURE 5 - BROADBAND NOISE FIGURE

VcE*20\

I'200

i
u

5a .

t.0

2.0

3.0

4.0

Veb. EMITTER-BASE VOLTAGE IVOLTSI

IC. COLLECTOR CURRENT(mA)

FIGURE 6-12 CHANNEL CROSS MODULATION

versus COLLECTOR-EMITTER VOLTAGE

FIGURE 7 -

12 CHANNEL CROSS-MODULATION

versus COLLECTOR CURRENT

IC 80 mA.dc
Eo -Wdt mV

VcE-20Vdc

z
z

Eo'+SOaBmV

X
u

5 so
a

3 fin
IE

3
16

VCE.COLLECTOR-EMITTER VOLTAGE IVOLTS)

FIGURE 8-30 CHANNEL CROSS-MODULATION

100

FIGURE 9 - 30 CHANNEL CROSS-MODULATION

ON CHANNEL 2.13.R

ON CHANNEL R

1 1

IC. COLLECTOR CURRENT(mA)

\ /CF- 20 V dc

vce

Eo-+50d3mV

4f1

E (,'! OdS nV

SO
SS

E ** SdB nV

CHA NNEL 13

CHANNEL R

E -*4 OdBr nV

CHANNEL 2 |

100

lC. COLLECTOR CURRENT (mA)

IC.COLLECTOR CURRENT(mA)

MOTOROLA RF DEVICE DATA

2-694

100

MRF511

FIGURE 10 - 30-CHANNEL CROSS-MODULATION versus

COLLECTOR-EMITTER VOLTAGE

If 80 mA dc
Eo . 50dE mV.

17
18
19
20
21
22
23
VCE. COLLECTOREMITTEH VOLTAGE (VOLTS)

FIGURE 12 - TRIPLE BEAT versus

COLLECTOR-EMITTER VOLTAGE

FIGURE 11 - TRIPLE BEAT versus COLLECTOR CURRENT

f 40

|_VCE- 20 Vd

IC'SOmA

Eo 50 d BroV on Ch inntl 2.3. E

E0 50dBmV onChinntl2.3.E

s
-

100

1 1 1 1

3J.

VcE-20Vde
E0 +50dBmV en Chtrtntl2.13

ii3

g*40

E0> +50dBmV onCranntl 2.13

J S 0
58

Sz 50

So 50
zo

85 60

as so
".5
X

FIGURE 14 - SECOND ORDER IMD versus COLLECTOREMITTER VOLTAGE

FIGURE 13 - SECOND ORDER IMO versus COLLECTOR

CURRENT

530

Vce. COLLECTOR EMITTER VOLTAGE (VOLTS)

lC. COLLECTOR CURRENT ImA)

100

Vce. COLLECTOR-EMITTER VOLTAGE (VOLTS)

IC.COLLECTOR CURRENT ImA)

MOTOROLA RF DEVICE DATA

2-695

MRF511

FIGURE 15- INPUT REFLECTION COEFFICIENT (SID AND OUTPUT

REFLECTION COEFFICIENT (S22I versus FREQUENCY

FIGURE 16 FORWARD TRANSMISSION

FIGURE 17 REVERSE TRANSMISSION

COEFFICIENT S21 versus FREQUENCY

COEFFICIENT S-|2 versus FREQUENCY

^^^^r^':.^^x^:).vA~i"^^~

77^

';, ''.-,

0.3 VcE =20Vdc "

^||=~ lc=80mAdc

%%533=E=5 ZfjZL-Zo50n m
700.

ill.

j&rjl-.:.' ' ^^}i^^y.

MOTOROLA RF DEVICE DATA

2-696

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF515

The RF Line
0.75 W - 470 MHz

NPN SILICON HIGH FREQUENCY TRANSISTOR

HIGH FREQUENCY
TRANSISTOR

. . . designed for 12.5 Volt UHF large-signal amplifier applications

required in industrial equipment

NPN SILICON

Specified 12.5 Volt, 470 MHz Characteristics Output Power = 0.75 Watts
Minimum Gain = 8.0 dB

Efficiency = 50%

S Parameter Data From 100 MHz to 1.0 GHz

MAXIMUM RATINGS
Symbol

Valua

Collector-Emitter Voltage

VcEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

Rating

Unit

YE BO

4.0

Vdc

Collector Current Continuous

C-

150

mAdc

Total DeviceDissipation @Tc =25C

2.5

Storage Temperature Range

Tstg

Watts

14.3

mW/C

-65 to+200

Derate above 25C

RGURE 1 470 MHz TEST CIRCUIT

-OO

jSoUECTOR I^U-36I0014I|T|A|H|

12.5 Vdc

NOTES:

1 DIMENSIONING ANDT0LERANCING PERANSI

Y14.5M.1982.
2. CONTROLLING DIMENSION:INCH
3 DIMENSION J MEASURED FROMDIMENSION A
MAXIMUM.

4 DIMENSION B SHALLNOTVARY MORETHAN0.25

(00101INZONER-THISZONE CONTROLLED FOR
AUTOMATICHANDLING.
5 DIMENSION F APPLIES BETWEEN DIMENSION P
AND L DIMENSION 0 APPLIES BETWEEN
DIMENSIONL AND K MINIMUM.LEADDIAMETER
IS UNCONTROLLED IN DIMENSION P AND
BEYOND DIMENSION K MINIMUM.
CI. C2, C3 1.0-10 pF JOHANSON
C4 0.1 pF disc
CS 1.0 pf TANTALUM

CsD
i"l Z1

-r*2

i^-^-g

<*^J)C6

C6 0.018 jif chip

C7 1000 pF Feedthru
11. L2 - 0.15 ,<FChoke
L3 Bead Ferrite

Z1. 22 0.09" x 0.5* LINE. Zo * 100 fl

Z3 0.1B- x 1.0* LINE.Zo - 60 O

BOARD - 0.032- TEFLONGLASS.

"t, = 2.5

MAX

939

0335

0370

77S

aso

0335

6.10
041

660

0305
0.240

D
E
F
G

072
0.74

066

0.028

0.034

114

12.70

1905

0029
0.500

0.750

P
R

MOTOROLA RF DEVICE DATA

2-697

0.260
0.016
0021
0041
0009
0.019
0.016
0200 BSC

M
-

053

104
on
041
0.48
5 08 BSC

K
I

MCIOS
MIN

SSI

DIM

lL3

MUIM ETERS
MAX
MIN

835
45* BSC

254

127
-

0250

0.045

45* BSC
0050

0.100

CASE 79-04
TO-205AD

(TO-39)

MRF515
ELECTRICALCHARACTERISTICS(TC 25C unless otherwise noted.)
Characteristic

Symbol

Typ

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

v(BR)CBO

V(BRIEBO

4.0

Collector-Base Breakdown Voltage

(lc = 100uAdc. Ie"0)

Emitter-Base Breakdown Voltage

(IE = lOOuAdc. Ic = 0)
Collector Cutoff Current

'CEO

(VCE " 15 Vdc. IB = 01

Vdc

<lc = 5.0 mAdc. IB =0>

Vdc

pAdc

ON CHARACTERISTICS
DC Current Gain

hFE

150

(lc 50 mAdc, Vce " 10 Vdc)

Collector-Emitter Saturation Voltage
(lC = 50 mAdc, In. = 5.0 mAdc)

vCE(sat)

0.5

Vdc

DYNAMIC CHARACTERISTICS

Current-Gain - Bandwidth Product

1800

(lC = 100 mAdc, Vce " 10 Vdc. f - 200 MHz)

Output Capacitance

cob

(VCb " 2-5 Vdc, l 0, f - 1.0 MHz)

2000

3.5

MHz

4.0

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

Gpe

8.0

8.5

(VCc " 12.5 Vdc. Pou, =0.75 W, f 470 MHz)

Collector Efficiency

1VCc _ !2-5 Vdc. Pout - 0.75 W, f * 470 MHz)

Series Equivalent Input Impedance

Zin

(VCc ' 12.5 Vdc, Pout =0.75 W. f - 470 MHz)

Series Equivalent Output Impedance

zout

(Vcc " 12-5 Vdc, Pout =0.75 W, f - 470 MHz)

FIGURE 2 - OUTPUT POWER versus INPUT POWER

14+J4.0

Ohms

28-J38

Ohms

FIGURE 3 - CURRENT-GAIN - BANDWIDTH PRODUCT

versus COLLECTOR CURRENT

1 1
S> 1.0

f 470 MHt

Vcc

1Z.5 V

100

150

Pin.INPUT POWER (mW)

IDQ
150
IC. COLLECTORCURRENT (mA)

FIGURE 4 - OUTPUT CAPACITANCE versus COLLECTOR BASE VOLTAGE

2.0

4.0

6.0

8.0

Vcb. COLLECTORBASE VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-698

200

MRF515
FIGURE 5 - S and S22 versus FREQUENCY

FIGURE 7 - S21 versus FREQUENCY

FIGURE 6 - S-2 versus FREQUENCY

350

340

330

ISO"

16QO

170

ISO0

350

340

330

140,
150

160

170

180

ISO"

200"

210

MOTOROLA RF DEVICE DATA

2-699

ISO0

200

210"

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF517

The RF Line

HIGH FREQUENCY

NPN SILICON HIGH FREQUENCY TRANSISTOR

TRANSISTOR
NPN SILICON

. . . designed specifically for broadband applications requiring low

distortion characteristics. Specified for use in CATV distribution
equipment.

Specified +45 dBmV Output, 60 mA Distortion Characteristics Triple Beat = -72 dB (Max)
12 Channel Cross Modulation = -57 dB (Max)
Second Order = -60 dB (Max)

Broadband Power Gain

Broadband Noise Figure -

GpE= 10dB(Typ)
NF = 7.5 dB (Max) @ f = 300 MHz

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage

Symbol

Value

Unit

VCER

Vdc

rG*D

(RBE = 3301*1
Collector-Base Voltage

vCBO

Emitter-Base Voltage

VEBO

3.5

Vdc

Collector Current - Continuous

150

mAdc

Total Power Dissipation@Tc = 50C

Derate above 50C

2.5

Watts

0.02

W/C

Operating Junction Temperature

175

Storage Temperature Range

TStq

-65 to +200

Symbol

Max

Unit

RtfJC

c/w

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

NOTES:
J1 DIMENSIONING ANDTOLERANCtNG PER ANSI
Y14SM. 1932
2 CONTROLLING DIMENSION:INCH
3 DIMENSIONJ MEASUREDFROMDIMENSIONA
MAXIMUM.

4 DIMENSIONB SHALLNOT VARYMORETHAN025

10010) IN ZONER. THISZONECONTROLLED FOR
AUTOMATICHANDLING.
5 DIMENSIONF APPLIESBETWEENDIMENSIONP
ANDL DIMENSION0 APPLES BETWEEN
DIMENSIONL AND K MINIMUM.LEADDIAMETER
IS UNCONTROLLED IN DIMENSIONP AND
BEYOND DIMENSION K MINIMUM.

FIGURE 1 - POWER DISSIPATION

I 3.5
z
o

1 "

MHUMETERS

3 2.5
a
tr

2.0

7.75
6.10
0.41

E
G
H

0.5

851

i.o

MIN

C
0

o
25

100

125

150

175

2TX)

2-700

048
SOB BSC

INCHES
MAX
MW
0335
0370

0.30s
0240
0016
0009
0016
0200

0335
0260
0021
0041
0019
BSC

0034

OSS

0028

1.14

1270

1905

635

0029
0045
0500
0750
0250
45 BSC

45* BSC

MOTOROLA RF DEVICE DATA

939
650
6.60
0.53
104

072
074

Tc. CASE TEMPERATURE lC)

023
041

MAX

254

127

0100

0050
-

CASE 79-04
TO-205AB

(TO-39)

MRF517
ELECTRICAL CHARACTERISTICS iTc = 25C unless otherwise noted.)
Min

Symbol

Characteristic

Typ

Unit

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BRICEO

Vdc

V(BRICER

Vdc

V(BR)CB0

Vdc

V|BR|EBO

3.5

Vdc

(lc = 5.0 mAdc, Ib = 0)

Collector-Emitter Breakdown Voltage

llc - 5.0 mAdc. Rbe * 330 Ohms)

Collector-Base Breakdown Voltage

(lc = 100 MAdc. l = 0)

Emitter-Base Breakdown Voltage

(l= tOOpAdc, lc = 0)
^Adc

100

"CEO

Collector Cutoff Current

(VC= 15 Vdc. Ir = 0)
ON CHARACTERISTICS
OC Current Gain

"FE

200

(lc = 60 mAdc. VCe " 10 Vdc)

DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product

2200

2700

MHz
-

(lc = 60 mAdc. VCe = '5 Vdc-' = 20 MH*>

Cob

Output Capacitance

3.0

4.5

IVCB" 15 Vdc. l = 0, f ' 1.0 MHz)

FUNCTIONAL TEST

Gpe

Common-Emitter Amplifier Power Gain

(VCE = 15 Vdc. lc 60 mAdc, f = 300 MHz)

7.5

IMD2

-57

XMD,2

-57

TB3

-72

Broadband Noise Figure

(Vce = 15 Vdc- 'C 50 mAdc. f = 300 MHz)

2nd Order Distortion

(VCe " 15 Vdc. lc " 60 mAdc. Eout +45 dBmV.

Ch2 + ChG = 212.5MHz)

NCTA Cross Modulation Distortion, 12 Ch's (2-13)

(Vce " 15 Vdc, lc - 60 mAdc. Eoul = +45 dBmV.

Measured at Ch's 2 and 13)

Triple Beat Distortion, 3 Ch's

(VCE 15 Vdc, lc = 60 mAdc, Eout +45dBmV.

Chs U + 5 + A) - 265 MHz)

FIGURE 2 - 40 to 330 MHz BROAD8AND TEST CIRCUIT SCHEMATIC

<RF

Output

RF Input >

1.0 C2.C6.C7
C3.C5

lOpF JOHANSON

VK200

0.002 MF Ceramic Disk

16:1 Bifilar Wound. "20 AWG Enameled Wire.

0.1 pF. SO Vdc Tantalum

Wound on a FERROXCUBE 1041T0604C4 Coro

1000 pF Button

4.7 k'l. 1/4 Watt. 10%

1 Turn. 20 AWG

27 12 . 1/4 Watt. 5%

270 il. 1/4 Watt. 5%

5.6nH Molded Choke

4 Turns. O20 AWG. 1/4" I

Input/Output Connectors - Typo F

Z * 75 Ohms

MOTOROLA RF DEVICE DATA

2-701

MRF517

FIGURE 3 - TYPICAL RESPONSE CURVE

(See Figure 2)
iz

FIGURE 4 - COMMON-EMITTER POWER GAIN

versus FREQUENCY

VCE '5 Vdc

IC= 6umA'

""^O >^ Onax j

<
a

10Log |S2H2
t

s.
o

8.0

7.0

200

300

200

I. FREQUENCY (MHi)

FIGURE S - CURRENT GAIN BANDWIDTH PRODUCT

3000

300
400
I. FREQUENCY |MH2)

500

700

FIGURE 6 - INPUT CAPACITANCE versus

versus COLLECTOR CURRENT

EMITTER-BASE VOLTAGE

Vce = 15 Vdc

hi* Mttsurtdat20 DMH*~

2800

%8.0

2600

^
a

6.0

a
z

t 2400

5 4.0
Q.

2200

2.0

2000

1.0

IC. COLLECTOR CURRENT (mA)

2.0

3.0

4.0

Veb. EMITTERBASEVOLTAGE(VOLTSI

FIGURE 7 - OUTPUT CAPACITANCE versus

FIGURE 8 - BROADBAND NOISE FIGURE versus

COLLECTOR-BASE VOLTAGE

COLLECTOR CURRENT

9.0

8.0

6.0

7.0

4.0

6.0

2.0

5.0

Vce 15 Vdc

0
z
1-

I- 300 MH Z^0*

5
<

100 IHr

3
a.

Z3
0

4.0

2.0

1 1

VCE 15 Vdc

4.0

6.0

8.0

Vcb. COLLECTOR-BASE VOLTAGE (VOLTS)

lC. COLLECTOR CURRENT(mA)

MOTOROLA RF DEVICE DATA

2-702

MRF517

FIGURE 9 - 2nd ORDER DISTORTION 1 t f2) versus

FIGURE 10 - 12-CHANNEL CROSS MODULATION

DISTORTION versus COLLECTOR CURRENT

COLLECTOR CURRENT
_.

vce 15 Vdc
Eoul = 45dBmV|178mV7Ch)
o

'l
-

l^~

^Channel 13
l3-'l-'2~

15 Vd

EoU>+45 dBmV (178 mV/Ch)

N \

VCE

(3-1 j-h-

funnel

'2 Ch 13(211 MHzl

lC. COLLECTOR CURRENT (mA)

lC. COLLECTOR CURRENT(mA)

FIGURE 12 - TRIPLE BEAT DISTORTION (fi + f2 + f3>versus

FIGURE 11 -

OIN 45004 CROSS-MODULATION DISTORTION

COLLECTOR CURRENT

VCF = 15 Vdc
1 C=60 <inA

V[E> l5VHr
Eout =*dBmV(178mV/CW

f,-l 2 +'3
1+' 2-3

l|H2 I3 =265 MH

1227.MHz,E0ui.(2>sEout-6dB
cout -

l|:C h4(S7 MHi)

l2:Ch5(77MHz)
l3:ChA(121MH;)

I
96

-92

-88

-84

-80

-76

-72

-68

FIGURE 13- HARMONIC DISTORTION <2f, 3fl versus

COLLECTOR CURRENT
4U

Vrj= 15Vdc
l 100 MHi

. Pout (I 0 <IBm

2 200 AHz
70

1= 300

SO
40

lC. COLLECTOR CURRENT(mA)

OIN 45004 CROSS M00ULATI0N DISTORTION (dB)

lC. COLLECTOR CURRENT(mA)

MOTOROLA RF DEVICE DATA

2-703

MRF517

vce

Frequency

(Volts)

(mA)

(MHz)

S11

100
200
5

S21

S12

IS11I

S21I

121

0.538

-152

12.821

100

0.043

S22

1S221 1

0.381

L4
-102

0.546

-173

6.612

0.064

0.314

-121

400

0.557

163

3.440

0.105

0.315

-132

600

0.602

147

2.357

0.144

0.360

-140

800

0.625

136

1.872

0.181

0.437

-143

-144

1000

0.626

120

1.614

0.211

0.482

100

0.532

-160

13.475

0.040

0.362

-111

200

0.542

-178

6.850

0.063

0.314

-130
-140

400

0.558

160

3.586

0.109

0.313

600

0.602

145

2.475

0.151

0.353

-146

800

0.619

134

1.962

0.190

0.423

-147

1000

0.616

118

1.706

0.221

0.464

-147

100

0.532

-163

13.530

0.038

0.354

-115

200

0.545

179

6.908

0.063

0.313

-133
-143

400

0.558

159

3.607

0.111

0.312

600

0.604

145

2.489

0.153

0.352

800

0.620

133

1.982

0.193

0.419

-149

1000

0.614

117

1.721

0.224

0.455

-148

100

0.500

-145

.14.176

102

0.040

200

0.502

-170

7.358

0.059

0.304

-105

400

0.512

164

3.819

0.097

0.304

-118

600

0.559

149

2.593

0.133

0.356

-128

800

0.583

137

2.033

0.166

0.442

-134

1000

0.584

122

1.724

0.194

0.497

-137

100

0.487

-154

14.977

100

0.037

0.353

-96

200

0.498

-174

7.715

0.059

0.287

-114

-125

0.386

-87

0.506

161

4.009

0.101

0.294

600

0.553

146

2.731

0.139

0.341

800

0.572

135

2.158

0.174

0.422

-137

1000

0.569

119

1.835

0.202

0.475

-139

100

0.486

-157

0.036

400

-133

15.192

0.337

-98

200

0.493

-176

7.764

0.058

0.280

-116

400

0.508

160

4.043

0.101

0.287

-126

600

0.555

145

2.761

0.141

0.336

-134

800

0.574

134

2.184

0.176

0.417

-138

1000

0.568

118

1.861

0.204

0.469

-139

100

0.465

-153

15.774

100

0.035

0.337

-88

200

0.475

-174

8.091

0.056

0.274

-105

400

0.487

161

4.209

0.097

0.284

-116

600

0.532

146

2.863

0.133

0.337

-126

800

0.551

135

2.249

0.167

0.425

-132

1000

0.547

119

1.909

0.193

0.482

-135

100

0.468

-150

15.650

101

0.036

0.354

-87

200

0.475

-172

8.088

0.057

0.282

-104

400

0.486

163

4.178

0.096

0.290

-116

600

0.530

147

2.846

0.133

0.341

-126

800

0.549

136

2.228

0.166

0.429

-132

1000

0.547

120

1.887

0.192

0.487

-135

-80

100

0.487

-141

14.773

103

0.039

0.391

200

0.486

-167

7.724

0.057

0.303

-97

400

0.491

166

3.986

0.093

0.306

-110

0.537

600
800

1000

150

2.694

0.127

0.359

-122

0.565

138

2.108

0.159

0.448

-129

0.566

123

1.779

0.185

0.507

-134

MOTOROLA RF DEVICE DATA

2-704

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF521
MRFC521
MRF522
MRF524
MRF5211L

The RF Line

PNP Silicon

High-Frequency Transistors
... designed primarilyfor use in the high-gain, low-noisesmall-signal amplifiersfor
operation up to 3.5 GHz.Also usable in applications requiring fast switching times.

High Current Gain-Bandwidth Product fj = 4.2GHz (Typ) C lc

Low Noise Figure C f = 1 GHz NF(matched) = 2-8 dB <TVP>

- 50 mAdc

|c = -50 mA

High Power Gain Gpe (matched) = 11 dB <TYP)

HIGH FREQUENCY
TRANSISTORS
PNP SILICON

Guaranteed RF Parameters

Surface Mounted SOT-143 Offers Improved RF Performance

Lower Package Parasitics
Higher Gain

Tape and Reel Packaging Options

MRFC521

:.j)

MRF521

MRF522

MRF524

MRFS211L

Case 318A-05

Case 20-03

Macro-X
Case 317-01

Case 303-01

Chip

Style 2

Style 1

Vceo

-10

Collector-Base Voltage

VCBO

-20

Emitter-Base Voltage

VEBO

Maximum Junction Temperature

Style 1
(SOT-143)

Style 10
(TO-72)

Low Profile

-10

Vdc

-20

Vdc

-2.5

Vdc

Tjmax

-200

150

200

150

Collector Current Continuous

-50

-70

-50

-70

Total Device Dissipation (u Ta = 25'C

0.2

0.58
4.64

Watts
mW/C

0.58
7.7

Watts
mW/C

-65 to +200

-65 to +150

870

216

c/w

130

"CW

MAXIMUM RATINGS

Ratings

\ Collector-Emitter Voltage

'- '

Derate above 25C

Total Device Dissipation ( Tc = 75C

0.75

Derate above 75C (Note 1)

Storage Temperature

Tsta

UnH

Values

Symbol

-65 to +200

0.62
5

-65 to +150

-65 to +200

0.75

1.14

THERMAL CHARACTERISTICS
Thermal Resistance.
Junction to Ambient

RflJA

Thermal Resistance,
Junction to Case

Rojc

100

200

DEVICE MARKING
MRF5211 = 04

ELECTRICAL CHARACTERISTICS
Symbol

Characteristic

Min

Typ

UnH

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage dc = -1 mAdc. Ig = 0)

V(BR)CEO

Collector-Base Breakdown Voltage dc = -0.1 mAdc, lg = 0)

V(BR)CBO

Emitter-Base Breakdown Voltage (Ie = - 50 uAdc, lc = 0)

V(BR)EBO

Collector Cutoff Current (Vcb = -8 Vdc, lg = 0)

ICBO

1. Case Temperatureis measured on the collector lead where it first contacts the printedcircuitboard closest 10the package.

MOTOROLA RF DEVICE DATA

2-705

Vdc
Vdc
Vdc
10

uAdc
(continued)

MRF521 Series
ELECTRICAL CHARACTERISTICS continued (Tc = 25X unless otherwise noted.)
Characteristic

Symbol

Min

hFE

Typ

Max

Unit

ON CHARACTERISTICS

j DC Current Gain He = -30 mAdc, Vce = -5 Vdc)

125

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance

Figure 1

Ccb

(Vcb = -6 Vdc, lE = 0, f = 1 MHz)

Current Gain Bandwidth Product

Figure 7

4.2

(Vce = "8 Vdc, lc = -50 mA, f = 1 GHz)

GHz

FUNCTIONAL TESTS

PowerGain at Minimum Noise Figure

Figure 6

(Vce = -6 V, lc = -5 mA, f = 500 MHz)

(VCE = -6 V, lc = -5 mA, f = 1 GHz)

GNFn

MRF524
MRF521/522/5211L

Noise Figure Minimum

Figure 6

(Vce = -6 V,lC = - 5 mA, f = 500 MHz)

(VCE = -6V. lc -5 mA, f = 1 GHz)

NF,

MRF524
MRF521/522/5211L

2.5
2.8

3.5

TYPICAL CHARACTERISTICS

J* 3

1
o*

C( b

1
= 1M

** b

= 1M

-1

-2 -3 -4
-5 -6 -7 -8
Vcb.COLLECTOR-BASE VOLTAGE (VOLTS)

-9

-1

-2

Figure 1. Junction Capacitanceversus Voltage

Rgure 2. Input Capacitance versus Voltage

Vce = -6 Vdc

'MICR0LAB

vbe

HW-XXN

AS APPLICABLE
D.U.T.

RFINPUT >

BIAS
TEE

"SLUG TUNER

-3

VBE. BASE-EMITTER VOLTAGE IV0LTS)

"SLUG TUNER

"BIAS

-Q-

-CRF OUTPUT

TEE

MICR0LAB/FXR
SF- 11N<1GHz

SF-31IN&1GHZ

Rgure 3. Functional Circuit Schematic

MOTOROLA RF DEVICE DATA

2-706

MRF521 Series

I
Zo = 50n

i - icu,

'/
*

l'= 200 MHi

-20

-40

-60

-80

-100

lC. COLLECTOR CURRENT ImAI

Rgure 4. Gain-Bandwidth Product versus Current

GAIN AND NOISE FIGURE VERSUS FREQUENCY

/ MRF521,522
I

VCE =

/ 1/

VrF = -6V dc
ic- -5m/>

MRFS24, 5211L
32

CKT =

Figure

-6 Vdc

'C =

-5mA

50 It

3. 24
z

l'i = 0
CKT = KP11608A

G|
_ MRF521.522

MRF524^"
"""Tnf

MRF5211L

NVMRF521,522,5211L

I/IRF5 24

0.15

0.2

0.5

f, FREQUENCY (GHz)

I. FREQUENCY (Gru)

Figure 6. Tuned Circuit

Figure 5. 50 Ohm System

GAIN AND NOISE FIGURE VERSUS CURRENT

~~T 1 1

1L-**

Vce= -6 Vdc
CKT = Rgure 3

MRF521.522
MRF5211L

MRF521.522.5211L

1 1 1
o

l9 -/g

VCE

= -6Vdc

CKI

= Ftgu re 3

/ \

"MRF524

cf 6

/
y

URF52*

3 35

MRF521.522,5211 L

MRI 521.52.

-10

-20

MR 5211L

-10

-30

-20

-30

-40

lC. COLLECTOR CURRENT ImAI

lC, COLLECTOR CURRENT (mA)

Rgure 8. Tuned Circuit Frequency 1 GHz

Figure 7. Tuned Circuit Frequency 500 MHz

MOTOROLA RF DEVICE DATA

2-707

MRF521 Series

iS2ll2
h-PiiPhi-IShPi
32

VCE = -8 Vdc
t = -50 mA
Zo = bUil

16
'

0.15

0.2

0.5

I. FREQUENCY (GHi)

Rgure 9. Gumax versus Current

MRF521 COMMON EMITTER S-PARAMETERS

S11

S12

S21

S22

vce

(Vdc)

(mA)

(MHz)

rSllI

L<t>

IS21I

<t>

IS12I

IS22I

*-*>

-6

-5

200

0.75

-116

7.6

117

0.06

0.59

-42

500

0.75

-164

3.9

0.07

0.42

-51

1000

0.74

165

0.08

0.37

-64

-10

-50

-8

-5

-10

-50

1500

0.75

144

1.3

0.09

0.39

-85

2000

0.74

124

0.14

0.43

-101

200

0.71

-138

10.7

109

0.04

0.45

-54

500

0.72

-175

4.7

0.06

0.29

-61

1000

0.72

148

2.4

0.08

0.20

-73

1500

0.72

140

1.6

0.11

0.28

-94

2000

0.71

122

1.2

0.16

0.31

-108

200

0.71

-172

12.9

100

0.02

0.26

-77

500

0.72

170

5.3

0.05

0.15

-88

1000

0.72

152

2.7

0.09

0.13

-99

1500

0.72

136

1.8

0.13

0.17

-116

2000

0.71

118

1.4

0.18

0.20

-123

200

0.77

-107

8.3

119

0.06

0.64

-38

500

0.74

-163

4.1

0.07

0.45

-46

1000

0.74

167

2.2

0.07

0.40

-58
-79

1500

0.74

146

1.4

0.08

0.42

2000

0.73

126

1.1

0.13

0.45

-95

200

0.69

-133,

11.5

111

0.04

0.49

-49

0.32

-55

500

0.71

-172

5.1

0.05

1000

0.71

161

2.6

0.07

0.28

-64

1500

0.71

142

1.7

0.10

0.30

-85

2000

0.70

123

1.3

0.15

0.33

-98 .

200

0.67

-171

13.2

0.02

0.25

-70

500

0.70

171

5.8

0.04

0.17

-74

1000

0.69

151

2.9

0.08

0.15

-82

1500

0.70

136

0.12

0.17

-100

2000

0.68

117

1.5

0.17

0.20

-109

MOTOROLA RF DEVICE DATA

2-708

MRF521 Series

40
=

VCE

-8 vcc

Ir =

= 50 0

z 24
<

V5RF521.522.5211L

S 16
CO

MRF524"*-'

0
0.15

0.5

0.2

I, FREQUENCY (GHz)

Figure 10. Insertion Gain versus Frequency

MRF522 COMMON EMITTER S-PARAMETERS

vce

(Vdc)

(mA)

-6

-5

-10

-50

-8

-5

-10

-50

S21

(MHz)

[Sill

S22

L<t>

IS21I

IS12I

120

0.06

L4,

IS22I

*-*

0.60

-40

0.42
0.36
0.37
0.41

200

0.77

-113

7.5

500

0.80

-157

3.9

0.07

1000

0.83

177

0.07

1500

0.84

164

1.3

0.06

2000

0.88

153

0.06

200

0.77

-138

10.4

112

0.04

0.47

-56

SOO

0.82

-168

4.9

0.05

0.28

-65

0.05

0.23

-77

0.26

-100

0.30

-112

-88

1000

0.85

173

2.5

1500

0.86

163

1.7

2000

0.88

153

1.3

0.06
0.07

-51
-63
-88
-106

200

0.81

-169

13.2

104

0.02

0.30

500

0.84

177

5.8

0.03

0.17

-112

1000

0.87

166

0.04

0.13

-130

1500

0.87

158

0.06

0.19

-138

2000

O.SO

149

1.5

0.08

0.21

-142

200

0.80

-109

121

0.06

0.64

-39

500

0.81

-153

4.1

0.07

0.43

-46

1000

0.83

-179

2.1

0.07

0.38

-58

1500

0.85

168

1.4

0.06

0.39

-80

2000

0.87

157

1.1

0.06

0.42

-95

200

0.76

-133

11.1

113

0.04

0.49

-52

500

0.80

-167

0.05

0.28

-60

0.05

-69

-105

1000

0.83

174

5.3
2.7

1500

0.85

163

1.8

0.06

0.23
0.27

2000

0.87

153

1.4

0.07

0.30

200

0.76

-160

14.4

105

0.02

0.30

-86

500

0.80

178

6.4

0.03
0.04

0.16

-110

-91

1000

0.84

164

3.2

0.16

-125

1500

0.85

154

2.1

0.06

0.16

-140

0.08

0.19

-141

2000

0.88

145

1.7

MOTOROLA RF DEVICE DATA

2-709

MRF521 Series

MRF524 COMMON EMITTER S-PARAMETERS

(Vdc)

(mA)

(MHz)

Pill

<L*

-6

-5

200

0.42

-10

-50

-8

-5

-10

-50

Si2

S21

vce

S22

fell

*.4>

' I812I

15221

-98

5.8

109

0.07

0.65

-26
-29

400

0.29

-143

3.5

0.10

0.54

600

0.27

-175

2.5

0.13

0.50

-33

166

0.17

0.47

-42
-49

800

0.27

1000

0.25

147

1.7

0.21

0.47

200

0.28

-111

7.3

100

0.06

0.54

-28

400

0.21

-152

4.1

0.10

0.46

-28

600

0.20

-179

2.9

0.14

0.41

-32

800

0.20

167

2.3

0.39

-41

0.18

149

1.9

0.19
0.22

1000

0.41

-47

200

0.15

-136

8.1

0.06

0.42

-26

400

0.13

-172

4.4

0.12

0.36

-25

600

0.15

166

0.17

0.33

-28

0.15

159

3.1
2.4

800

0.21

0.32

-38

1000

0.13

143

0.25

0.32

-45

200

0.45

-93

6.1

109

0.06

0.87

-25

400

0.30

-137

3.7

0.09

0.57

-27

600

0.27

-167

0.12

0.51

-32

0.26

174

2.6
2.1

800

0.15

0.49

-40

1000

0.23

155

1.8

0.19

0.50

-47

200

0.28

-100

7.5

101

0.06

0.57

-25

0.10

400

0.18

-139

4.3

600

0.17

-171

0.13

65
64

0.45

-30

800

0.16

174

2.3

0.18

0.43

-39

1000

0.13

153

0.21

0.44

-45
-23

0.49

-26

200

0.14

-107

8.3

0.06

0.47

400

0.10

-155

4.6

0.11

0.42

-23

600

0.10

172

3.2

0.16

0.39

-26

800

0.10

163

2.5

0.20

0.37

-36

1000

0.09

0.24

0.37

-42

144 |

MOTOROLA RF DEVICE DATA

2-710

MRF521 Series

MRFS211L COMMON EMITTER S-PARAMETERS

i vCE

| (Vdc)
-6

S22

S12

S21

(MHz)

ISllI

IS21I

L4>

|SI

L+

IS22I

<L4>

-5

200

0.82

-114

7.9

118

0.07

0.59

-46

500

0.81

-158

0.08

0.40

-54

1000

0.79

175

0.08

0.37

-68

1500

0.76

158

1.3

0.07

0.43
0.47

-82

0.43

-63
-75

2000
-10

-50

-8

S11

(mA)

-5

-10

-50

0.74

143

0.08

109

0.05

-95

0.78

-137

10.6

500

0.79

-168

4.9

0.06

0.26

1000

0.77

169

2.5

0.06

0.24

-87

1500

0.74

155

1.6

0.08

0.29

-97

2000

0.71

140

200

0.77

-167

200

1.2

0.10

39
49
55

0.32

-106

0.02

0.26

-108

500

0.77

176

13.1
5.7

0.04

0.18

-132

1000

0.76

161

2.8

0.06

0.17

-142

1500

0.73

149

0.08

0.19

-137

2000

0.70

136

1.9
1.4

0.12

0.20

-137

200

0.82

8.1

119

0.07

0.62

-43

500

0.80

-109
-154

4.2

0.08

0.42

-52

1000

0.78

175

2.2

0.08

0.38

-65

1500

0.75

159

1.4

0.43

-78

0.72

143

50
37

0.07

2000

0.09

0.46

-89

0.45

-61

-70

200

0.77

-132

11.2

110

0.05

500

0.77

-167

5.2

0.06

0.27

1000

0.76

169

2.6

0.06

0.25

-81

1500

0.73

155

1.7

0.07

0.29

-90

2000

0.70

140

200

0.75

-164

500

0.76

178

1.3

0.10

0.31

-98

14.2

100

0.02

0.26

-101

6.1

0.04

0.17

-121

0.06

0.15

-131

1000

0.75

163

3.1

82
67

1500

0.72

151

0.08

0.18

-126

2000

0.70

139

1.5

0.11

0.19

-127

CHIP TOPOGRAPHY

Nominal Chip Size: 0.015" x 0.016" x 0.005"

Front Metallization: Gold
Back Metallization: Gold
Emitter Base Bond Pad: 2.2 x 2.2 mil

#Emitter Fingers: 22
#Base Fingers: 23
Emitter Diffusion: Ion-Implanted Arsenic

MOTOROLA RF DEVICE DATA

2-711

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF525

The RF Line
100-500 MHz BROADBAND

HIGH FREQUENCY
TRANSISTOR
NPN SILICON

NPN SIUCON HIGH FREQUENCY TRANSISTOR

... designed specifically for broadband linear amplifierstages in
the 100-500 MHz frequency range.
Guaranteed Performance at 225-400 MHz. 26 Vdc
Minimum Gain = 13 dB
Maximum NF = 4.0 dB

Third Order Intercept +35 dBm (Typ)

Common Emitter TO-39Type Package
S-Parameter Characterization

-Q

STYLE 5

PIN 1 COLLECTOR
2 BASE
3 EMITTER

m Din
|!<0.36mow |t|

MAXIMUM RATINGS

Rating
Collector-Emitter Voltage

(RBE - 330 SI)

Collector-Bate Voltage

Emitter-Base Voltage

Symbol

Value

Unit

VCER

Vdc

VCBO
VEBO

Vdc

3.5

Vdc

Collector Current Continuoui

150

mAdc

Total PowerDissipation @T^ 50C

2.5

Watts

0.017

W/C

Derate above 50C

Operating Junction Temperature

+175

Storage Temperature Range

Tstg

-65 to +200

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Case

a| h[

GhDt

NOTES
1 DIMENSIONING AND TOLERANCING PER ANSI
Y14SM. 1932
2 CONTROLLING DIMENSION INCH.
3. DIMENSION J MEASURED FROMDIMENSION A
MAXIMUM
4. DIMENSION B SHALLNOT VARY MORETHAN 025
10.010)INZONER. THISZONECONTROLLED FOR
AUTOMATICHANDLING.
5 DIMENSION F APPLIESBETWEEN DIMENSION P
AND L DIMENSIOND APPLIESBETWEEN
DIMENSION L ANDK MINIMUM. LEADDIAMETER
IS UNCONTROLLED IN DIMENSION P AND
BEYONDDIMENSIONK MINIMUM.

DIM

MILLIMETERS
MIN
MAX

Symbol

Max

Unit

8.01

929
860

RflJC

C/W

420
044

457
053

0165 1 0.180

0.366
035

0017 1 0021

044

063

0017

041

OOtfi 1 0019

5 08 BSC
072
08$
0.74
101

0200 BSC
0.034
0028

J
K

L
M
P
R

2-712

INCHES

MIN 1 MAX
0355
0315

MOTOROLA RF DEVICE DATA

902

12.70
635

1905
_

45* BSC
127
254

0035

0.029

0.040

0.500

0.750

0.250

45 BSC
_

o too

0050

CASE 79-05
TO-206AF

(TO-39)

MRF525
ELECTRICAL CHARACTERISTICS <TC - 25C unless otherwise noted)
Characteristic
I Symbol

Typ

OFF CHARACTERISTICS

VfBRICEO

Collector-Emitter Breakdown Voltage

(lC = 5.0 mAdc.In,"01

V(BRICER

Collector-Emitter Breakdown Voltage

(lC 5.0 mAdc,Rp,E = 33 Ohms)

VfBRICBO

Collector-Base Breakdown Voltage

(lC 0.1 mA. Ie 0)

V(BRIEB0

Emitter-Base Breakdown Voltage

(lE - 0.1 mA, lc 0)

"CEO

Collector Cutoff Current

(VCe 15 Vdc. Ib'O)

ON CHARACTERISTICS
60

hFE

DC Current Gain

(lc - 80 mAdc.Vce = lOVdcl

DYNAMIC CHARACTERISTICS
GHz

2.5

Current-Gain - Bandwidth Product

(lC" 50 mAdc. VcE " 20 vdc<f* 20 MHitl

Output Capacitance

C0b

3.0

GpE

4.0

(Vcb " 10 Vdc. 'E ' .f "1.0 MHz)

FUNCTIONAL TEST - BROADBAND (Figure 1)
Common-Emitter Amplifier Power Gain

(Vcc' 26Vdc, P;n 0 dBm, f 400MHz)

Broadband Noise Figure

(Vce " 26 Vdc, f =400 MHz)

FIGURE 1 - 225 to 400 MHz BROADBANDTEST CIRCUIT SCHEMATIC
Q1

T.U.T.

-#?-a

CI
RF

,'Q| **

Input

J L4

-O +26 Vdc

WVR5

C1, C2 - 2.6 -11 pF Brio Ceramic Variable

R6 -

C3 - 47 pF 6.0 Volt Electrolytic

C4, CS - 1000 pF Food thru
C6 470 pF Ceramic Chip

L1 - 1 Turn #24, 0.125 mil ID

120 Si 1/2 Watt Carbon

L2, L4 - 0.47 pH Moldod Choko

C7 - 6.S-18 pF Erie Ceramic Varlablo

L3 - 2 Turns #24. 0.125 mil ID

L5 - 4 Turns #24, 0.125 mil ID

R1 -

160 n

1/8 Watt Carbon

02 -

R2 -

100 n

1/8 Won Carbon

2N2907A

R3, R4 - 10 kn 1/8 Wott Carbon

"Transistor Under Tost

R5 -

Ie - 47 mAdc (Nominal)

3.3 kH 1/8 Watt Carbon

MOTOROLA RF DEVICE DATA

2-713

MRF525
FIGURE 2 -

COMMON-EMITTER POWER GAIN (Gmsx)

FIGURE 3-CURRENT GAIN BANDWIDTH PRODUCT

versus FREQUENCY

versus COLLECTOR CURRENT

4.0

Iq 50mA

^
Vet - '> 6V

i 30
a.

VCE=26V

Vce^BvN,

2.0

VCE= 13.6 V "*-

<
u

I-

1.0

6.0

tl
200

300

400

500

I. FREQUENCY (MHz)

100

lC.COLLECTOR CURRENT ImA)

FIGURE 5 - 1.0 dB GAIN COMPRESSION OUTPUT

FIGURE 4 -

versus FREQUENCY

BROADBAND AMPLIFIER RESPONSE

B ,6
CO

|8.0

| 8.0

Measured In c ircuil
3
O

4.0

shown in Fig itel.

" 4.0

Must red in c icuit

itl. -

"V OdSm
0

300

f. FREQUENCY (MHj|

I. FREQUENCY (MHil

FIGURE 6 - THIRD ORDER INTERCEPT

/
/
^
^

**J

i*'

/
t

/
/
*

1 lOttn

in Fioure 1.

T wo-Tone Test:
4 00 end 402 MHi

1 1 1 I
HO

*30

+40

Pi.INPUT LEVEL<d8m)

MOTOROLA RF DEVICE DATA

2-714

MRF525

S-PARAMETERS

vce

(Volts)

(mA)

13.6

100

S22

S12

S21

S11

Frequency
(MHz)

ism

IS21I

IS12I

IS22I

100

0.388

-111

12.318

107

0.032

0.597

-24

200

0.331

-151

6.768

0.049

0.480

-25

300

0.337

-171

4.650

0.072

0.443

-31

176

3.580

0.096

0.442

-40

400

0.344

500

0.349

166

2 589

0.125

0.459

-47

100

0.287

-125

14.160

103

0.030

-24

200

0.263

-160

7.585

0.053

0.516
0.414

300

0.275

-177

5.167

0.078

0.378

-30

3.968

-38

-23

0.104

0.378

3.214

0.135

0.396

-45

-140

15.745

0.029

0.446

-24

-21

400

0.288

172

500

0.293

164

100

0.206

200

0.208

-171

8.299

0.056

0.358

300

0.226

176

5.612

0.084

0.324

-27

400

0.235

169

4.307

0.113

0.326

-36

500

0.243

161

3.488

0.114

0.345

-42

100

0.179

-151

15.931

0.029

0.430

-22

200

0.187

-177

8.293

0.058

0.358

-19

300

0.203

171

5.626

0.087

0.330

-25

400

0.212

164

4.276

0.115

0.338

0.364

-39

0.625

-15

500

0.213

157

3.456

0.147

100

0.454

-100

13.580

105

0.027

200

0.313

-138

7.339

0.040

0.552

-17

300

0.291

-161

4.989

0.060

0.532

-23

400

0.287

-175

3.826

0.080

0.544

-30

500

0.287

173

3.096

0.106

0.570

-36

100

0.313

-105

15.191

102

0.025

0.566

-14

200

0.220

-144

8.086

0.044

0.509

-15

300

0.213

-166

5.487

0.067

0.489

-20

400

0.215

-178

4204

0.092

0.498

-28

500

0.214

170

3.404

0.116

0.523

-34

100

0.165

-117

16.375

102

0.026

0.529

-14

200

0.139

-157

8.695

0.048

0.471

-14

300

0.151

-176

5.882

0.073

0.449

-20

400

0.157

173

4.494

0.098

0.458

-27

500

0.158

164

3.659

0.124

0.485

-32

100

0.215

-147

13.156

103

0.023

0.602

-14

200

0.212

-176

7.220

0.044

0.536

-17

0.069

0.507

-24

300

0.222

171

4.951

400

0.230

164

3.851

0.093

0.513

-31

SOO

0.233

156

3.123

0.123

0.534

-36

MOTOROLA RF DEVICE DATA

2-715

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF531

The RF Line

HIGH FREQUENCY
TRANSISTOR
NPN SILICON

NPN SIUCON HIGH FREQUENCY TRANSISTOR

... designed for high voltage and high current fj switching appli
cations. These devices are also ideal for CRT drivers.

High Collector-Emitter Breakdown Voltage

v(BR)CEO = 10 Vdc <Mi") @ 'C = 10 mAdc

High Current-Gain Bandwidth Product

fy = 800 MHz (Typ) @ \q = 50 mAdc

Characterized with Safe Operating Area (SOA) Curves

MAXIMUM RATINGS
Reting

Symbol

Value

Unit

Collector-Emitter Voltage

vCEO

100

Vdc

Collector-Base Voltage

VcbO
VebO

100

Vdc

3.5

Vdc

2.5

Watts

mW/C

Tstg

-65 to +200

Symbol

Max

Unit

RfljC

C/W

Emitter-Base Voltage

Total Device Dissipation @Tc = 25C

Derate above 25C
Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

-Din

ELECTRICAL CHARACTERISTICS (Tc *25C unless otherwise notedl

Characteristic

V(BR|CE0

100

V(BR)CBO

100

V(BRIEB0

3.5

Vdc

(IC 10 mAdc. IB = 0)
Collector-Base Breakdown Voltage

IIC ' 0.1 mAdc. Ie = 0)

Emitter-Base Breakdown Voltage

(IE 0.1 mAdc. IC =01

Collector Cutoff Current

| |fr 0.3610 Olt <S> hi A| H1

r~H^ G

| Symbol | Min | Typ | Max | Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

STYLE 1
PIN 1 EMITTER
2 BASE
3 COLLECTOR

'CES

(VCE " 7S Vdc- VBE o

MAdc

NOTES:
1 DIMENSIONINGAND TOlERANC'NG PER ANSI
Y14SM. \<sa
2 CONTROLLINGDIMENSION INCH
3 DIMENSION J MEASURED FROM DIMENSION A
MAXIMUM
4 DIMENSION8 SHALL NOT VARY MORE THAN 025
100101IN ZONE R THIS ZONECONTROLLED FOR
AUTOMATICHAN0LING
5 OMENSI0N F APPLIESBETWEEN DIMENSION P
AND L DIMENSION D APPLIES BETWEEN
DIMENSION I AND K MINIMUM LEAD DIAMETER
IS UNCONTROLLED IN DIMENSION P AND
BEYOND DIMENSION K MINIMUM

ON CHARACTERISTICS
OC Current Gain

hFE

Collector-Emitter Saturation Voltage

vCE(satl

1.0

500

800

MAX

939

0335

7.7S

850

0305

C
0
E
F

610
041

663
053

0370
0335
0260
0021

on
041

104

MHz

G
H
1

509 BSC
072
066
074
114

Vdc

(lC - 50 mAdc. VCE " 25 Vdc. f = 100 MHz)

Output Capacitance

cob

4.0

(vCb * '0 Vdc. ie o. f - i.o mhz>

Input Capacitance

I
M

Cib

9.0

(VBe 3.0 Vdc. IC 0. i - 1.0 MHz)

P
R

MOTOROLA RF DEVICE DATA

2-716

MM 1 MAX
851

DYNAMIC CHARACTERISTICS

DM
A

(lC - 10 mAdc, lg 10 mAdc!

Current-Gain - Bandwidth Product

INCHES

MWMETERS
-

(lC " 5.0 mAdc. Vce " 10 Vdcl

1270

048

1905

635
45' BSC
1.27
2.54

0240
0016
0009
0016
0200
0028

0029

0041
0019
BSC

0034
0045

0750
0500
0250
45 BSC
_

0100

0050
-

CASE 79-04
TO205AD

(TO-39)

MRF531

FIGURE 2 -

FIGURE 1 - CURRENT-GAIN - BANDWIDTH PRODUCT

75 1000

goo

1| m
700
SOO

SOO

INPUT CAPACITANCE

4
Z

*i 300

V C2S /

| 200

1 \

100

1.0

2.0

3.0

4.0

VB.EMITTER-BASE VOLTAGE (VOLTS)

lC. COLLECTOR CURRENTiA>

FIGURE 4 - DC SAFE OPERATING AREA

FIGURE 3 - OUTPUT CAPACITANCE

1000

700

_ 500

^1f W,ui)

7.0

380

jj? 4.0

t> 70

3.0

S 2.0

% 5.0 [
o

200

6.0

v
\

S
>

100

". 30

T C=25C

20
1.0
0

100

VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)

VCB.COLLECTOR-BASE VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-717

100

MRF534
MRF536

MOTOROLA

SEMICONDUCTOR

(See MM4049)

TECHNICAL DATA

The RF Line

MRF542
MRF548

NPN Silicon

High Frequency Transistors

... designed primarily for high frequency common base amplifiers used in medium and
high resolution color video display monitors.

HIGH FREQUENCY
TRANSISTORS
NPN SIUCON

High Collector-Base Breakdown Voltage V(BR)CBO = 120 V (Min)

Stripline Opposed Base Constiuction

Common Base Insertion Gain = 5.5 dB (Typ)

Package Options for Low Cost (MRF542), High Power Dissipation (MRF548)
Die Source Same as MRF544

Emitter Ballasted for Improved Ruggedness

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

VcBO

120

Vdc

Emitter-Base Voltage

vebo

Vdc

400

mAdc

MRF542

CASE 317D-02. STYLE 3

Collector-Current Continuous

Operating Junction Temperature

MRF542

MRF548

Total Device Dissipation (a Tc = 75C (1,2) MRF542

MRF548

Derate above 75C

PLASTIC

150

200

WaRs

MRF548

CASE 244A-01. STYLE 3

(TO-117)

MRF542/548

mWVC

Tstg

-65 to +150

Symbol

Max

Unit

Rwc

"OW

Symbol

Min

Storage Temperature Range

CERAMIC

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.)

Characteristic

Typ

Max

UnH

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage dc = 1 mAdc, \q = 0)

V(BR)CEO

Collector-Base Breakdown Voltage dc = 0.1 mAdc, lg = 0)

V(BR)CBO

120

Emitter-Base Breakdown Voltage (lf = 0.1 mAdc, lc - 0)

v(BR)EBO

Collector Cutoff Current (Vce = 80 Vdc, Vbe = <> TC = 25'C)

'CES

Collector Cutoff Current (Vcb = 80 Vdc, Ie = 0)

>CBO

Vdc
Vdc
Vdc

100

pAdc

jiAdc

ON CHARACTERISTICS

DC Current Gain dc = 50 mAdc. Vce = 10 Vdc)

hFE

DYNAMIC CHARACTERISTICS

Output Capacitance (Vcb = 10 Vdc, lg = 0, f = 1 MHz)

C0b

Collector-Base Capacitance (Vcb = 10 Vdc, h= = 0, f = 1 MHz)

CCb

Input Capacitance (Veb = 3 Vdc, f = 1 MHz)

Cib

2.9
2

2.5

12.5

5.5

pF
PF

FUNCTIONAL TESTS

IS21I2

Common Base Gain (Vcb - 1 v- 'C = 10 mA<f = 250 MHz>

4.5

(1) Tc. Case temperature measured on collector lead immediately adjacent to body of package.
-(2) The MRF542 PowerMacro must be properly mounted for reliable operation. AN938, "Mounting Techniques in PowerMacro Transistor." discusses
methods of mounting and heatsinking.

MOTOROLA RF DEVICE DATA

2-718

MRF542, MRF548

soo

400

1
k

300

| 10

s^MRF548

100

512*^

Vce. COLLECTOR-EMITTER VOLTAGE (Vdc)

Veb, EMITTER-BASE VOLTAGE (Vdc)

Figure 1. Safe Operating Area

Rgure 2. Input Capacitance versus Voltage

6
S

MRF548

%
uj

I 4

MRF542

S 3

Cob

0
100

150

200

TC, CASE TEMPERATURE CCI

Vcb. COLLECTOR-BASE VOLTAGE IVdcl

Figure 3. Power Dissipation versus Temperature

Figure 4. Junction Capacitance versus Voltage

MOTOROLA RF DEVICE DATA

2-719

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA
The RF Line

MRF543
MRF549

PNP Silicon

High Frequency Transistors

... designed primarily for high frequency common base amplifiers used in medium
and high resolution color video display monitors.

|q = -400 mA

HighCollector-Base Breakdown VoltageV(br)cbO = -100 V (Min)

HIGH FREQUENCY

Stripline Opposed Base Construction

Common Base Insertion Gain = 5.5 dB (Typ)
Package Options for Low Cost (MRF543), High Power Dissipation (MRF549)

HIGH VOLTAGE

TRANSISTORS
PNP SILICON

Die Source Same As MRF545

Emitter Ballasted for Improved Ruggedness

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

Rating

VCEO

-70

Vdc

Collector-Base Voltage

VcBO

-100

Vdc

Emitter-Base Voltage

vebo

-3

Vdc

-400

mAdc

150

Collector-Current Continuous

Operating Junction Temperature

MRF543

PLASTIC

MRF543

200

MRF549

Total Device Dissipation <& Tc = 75C (1,2) MRF543

MRF549
MRF543/549

Derate above 75C

CASE 317D-02. STYLE 3

Watts

5
40

mWVC

Tstg

-65 to +150

Symbol

Max

Unit

RflJC

"CAN

Symbol

Min

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

CASE 244A-01, STYLE 3

(TO-117)
CERAMIC

Thermal Resistance, Junction to Case

MRFS49

ELECTRICAL CHARACTERISTICS (Tc = 25Cunless otherwise noted.)

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage dc - -1 mAdc, lg = 0)

V(BR)CEO

-70

Collector-Base Breakdown Voltage dc = -0.1 mAdc, Ie = 0)

V(BR)CBO

-100

Vdc

Emitter-Base Breakdown Voltage (Ig = -0.1 mAdc, lc = 0)

V(BR|EBO

-3

Vdc

Collector Cutoff Current (Vce = -80 Vdc, Vbe = 0. Tc = 25C)

Ices

-100

/xAdc

Collector Cutoff Current (Vcb = -80 Vdc, Ie = 0)

'CBO

-20

pAdc

ON CHARACTERISTICS

DC Current Gain dc = -50 mAdc, Vce = ~10 vdc>

hFE

DYNAMIC CHARACTERISTICS

Output Capacitance (Vcb = _ 10 Vdc-l = . ' = 1 MH*1

Cob

Collector-Base Capacitance (Vcb = -10 Vdc, l = 0, f = 1 MHz)

Ccb

Input Capacitance (Veb = - 3 Vdc, f = 1 MHz)

Cib

2.8
2

10.5

2.5
-

pF
PF

FUNCTIONAL TESTS

Common Base Gain (Vcb = -10 V, lc = -100 mA, f = 250 MHz)

IS21I2

4.5

5.5
"

Notes: 1. Trj. Case temperature for MRF543 measured on collector lead immediately adjacent to body of package.
2. The MRF543 PowerMacro must be properly mounted for reliable operation,. AN938. "Mounting Techniques in PowerMacro Transistor." discusses
methods of mounting and heatsinking.

MOTOROLA RF DEVICE DATA

2-720

MRF543, MRF549

-500

20
V

-300

a is

-200

1,0

RFS49

100

-_MRF543~~
0

-10

-20

-30

-40

-50

-60

-70

-1

Vcg, COLLECTOR-EMITTER VOLTAGE (Vdc)

-2

-3

Veb. EMITTER-BASE VOLTAGE (Vdc)

Figure 1. Safe Operating Area

Rgure 2. Input Capacitance versus Voltage

8
7

f = IMrfc

f 6

_ 6

MR =549

u7 5
o

4
3

MRF543

"cob"

" 2

Ccb

*.
0

100

150

200

-3

-6

T&CASE TEMPERATURE PCI

-9

-12

-15

-18

-21

-24

-27

Vca.COLLECTOR-BASE VOLTAGE (Vdc)

Hgure 3. Power Dissipation versus Temperature

Rgure 4. Junction Capacitance versus Voltage

MOTOROLA RF DEVICE DATA

2-721

-30

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF544
MRFC544

The RF Line

NPN Silicon

High Frequency Transistors

lC = 400 mA

... designed for high-frequency and medium and high resolution color video
display monitors.

HIGH FREQUENCY
HIGH VOLTAGE

Emitter Ballasting for Improved Ruggedness

TRANSISTORS

High Power Gain G|j(max) - 16.5 dB (Typ) Ui f = 500 MHz

Ion Implanted

High Collector Base Breakdown Voltage V(gR)CBO' '20 V (Min)

High f-r 1400 MHz
State-of-the-Art Technology Fine Line Geometry
Gold Top Metallization

CASE 79-04
STYLE 1
MRF544

Silicon Nitride Passivation

MIL-S-19500 Processed Versions Available as MRF544MX, MRF544MXV

TO-205AD

(TO-39)

MAXIMUM RATINGS

Rating

Symbol

MRFC544

MRF544

Unit

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

vCBO

120

Vdc

Emitter-Base Voltage

vEBO

Vdc

Collector Current Continuous

-100

400

mAdc

Total Device Dissipation (u Tq = 75C

Derate above 75C

Storage Temperature Range

3.5

Watts

Tjmax = 200C

mwrc

- 65 to + 200

Symbol

Min

TS1<]

ELECTRICAL CHARACTERISTICS (Tc = 25 C unless otherwise noted.

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage dc

1 mAdc, \q = 0)

V(BR)CEO

Collector-Base Breakdown Voltage dc = 100 /<Adc, Iff = 0)

V|BR)CBO

120

Emitter-Base Breakdown Voltage (Ig ^ 100 jiAdc. lc = 0)

V(BR)EBO

Collector Cutoff Current (Vce " 80 Vdc, Vge = 0. Tc = 25C)

>CES

Collector Cutoff Current (Vcb = 80 Vdc, lg = 0)

!CBO

3
-

Vdc

100

/iAdc

jiAdc

ON CHARACTERISTICS

DC Current Gain dc = 50 mA, Vce = 10 Vdc'

nFE

DYNAMIC CHARACTERISTICS

Output Capacitance (Vcb 10 Vdc, l = 0, f = 1 MHz)

Cob

Junction Capacitance (Vcb

Ccb

10 Vdc, l = 0, f = 1 MHz)

Input Capacitance (Vrg " 3 Vdc. 'C = - ' = 1 MHz)

Cib

Current Gain-Bandwidth Product

1000

1.8
9

2.5

1400

pF
pF
MHz

(lC = 50 mA. VCE = 10 V, f - 250 MHz)

FUNCTIONAL TESTS
Maximum Available Gain

Gmax

16.5

(lC = 50 mA. Vce = 10 V, f = 250 MHz)

|S2ll2

Insertion Gain

dC = 50 mA. Vce = 1 V f = 250 MHz)

MOTOROLA RF DEVICE DATA

2-722

MRF544, MRFC544
TYPICAL CHARACTERISTICS
1
s

f = 250MHz
Vrc - lOVtnJSV

vCt

,v *"

1500

|l200
900
z

s
= 600

. ik.^rnax

|
S_|Sji|2

if-300

200

400

600

2000

1000

100

I&COLLECTOR CURRENT (mA)

f. FREQUENCY (MHz)

Rgure 2. Gain-Bandwidth Product versus

Figure 1. Power Gain versus Frequency

Collector Current

1
16

svs

^OD

^*.

2
4

I
0

1 2

vCB. collector base voltage wi

VEB, EMITTER BASE VOLTAGE (V)

Rgure 3. C;D Input Capacitance versus Voltage

Rgure 4. Junction Capacitance versus Voltage

500

400
z

o
,

-300

13
j
8 2

5
S

100

150

200

Vc(Vdcl

t, TEMPERATURE ("CI

Figure 5. Dissipation versus Temperature

Figure 6. Safe Operating Area

MOTOROLA RF DEVICE DATA

2-723

MRF544, MRFC544

-150

+900

Rgure 7. Input/Output Reflection Coefficient

versus Frequency (GHz)
Vce = 10 V lc = 50 mA

Rgure 8. Forward/Reverse Transmission

Coefficients versus Frequency (GHz)

Vce = 10 V lc = 50 mA

COMMON EMITTER S-PARAMETERS

S21

S22

vce

(Volts)

(mA)

(MHz)

ISnl

*-<S>

|S2ll

IS12I

*-*

IS22I

100

0.59

-138

11.71

106

0.04

0.48

250

0.59

-167

4.64

0.06

0.38

-50

500

0.61

174

2.30

0.10

0.37

-66

750

0.66

166

1.52

0.42

-89

1000

0.66

157

1.17

0.15
0.20

0.50

-104

i-4>
-43

100

0.58

-147

12.38

102

0.04

0.43

-48

250

0.58

-171

4.85

0.06

0.34

-52

500

0.60
0.64

170

2.43

0.10

0.33

-67

750

163

1.61

0.15

0.39

-91

1000

0.64

155

1.24

0.21

0.46

-105

100

0.60

-151

12.15

101

0.03

0.39

-47
-55

250

0.60

-173

4.76

0.05

0.34

500

0.62

170

2.35

0.10

0.35

-72

750

0.66

1.53

0.14

0.43

-96

1000

0.65

162
154

1.16

0.20

0.51

-108

100

0.59

-133

12.77

110

0.03

0.53

-34

250

0.59

-164

5.06

0.05

0.46

-42

500

0.60

177

2.48

0.45

-60
-83

750

0.64

168

1.59

0.08
0.12

0.50

1000

0.66

159

1.20

0.17

0.57

-99

100

0.56

-142

13.25

103

0.03

0.50

-35

250

-42

0.56

-169

5.21

0.05

0.44

500

0.58

172

2.60

0.09

750

0.62

163

1.68

0.13

0.43
0.48

-82

1000

0.63

155

1.28

0.18

0.55

-97

-59

100

0.58

-143

13.87

102

0.03

0.54

-33

250

0.57

-172

5.19

0.47

-39

170

2.55

0.05
0.08

0.46

-58

500

0.59

750

0.64

162

1.65

0.13

0.50

-81

1000

0.64

154

1.24

0.18

0.57

-97

MOTOROLA RF DEVICE DATA

2-724

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF545
The RF Line

MRFC545

PNP Silicon

High Frequency Transistors

\q = -400 mA
... designed for high-frequency and medium and high resolution color video display

HIGH FREQUENCY

monitors.

HIGH VOLTAGE

Emitter Ballasting for Improved Ruggedness

TRANSISTORS
PNP SILICON

High Power Gain Gu(max) = 15-5 clB 'TVP>(" f = 250 MHz

Ion Implanted

Hirjh Collector Base Breakdown Voltage VjbrjcbO = ~ 1u V (Min)

High fj 1250 MHz (Typ)
Stateof-the-Art Technology
Fine Line Geometry

Gold Top Metallization

CASE 79-04
STYLE 1

///

Silicon Nitride Passivation

MIL-S-19500 Processed Versions Available as MRF545HX, MRF545HXV

TO-205AD

(TO-39)

MRF545

Hi Hi
CHIP
MRFC545

MAXIMUM RATINGS

Rating

Symbol

MRFC545

MRF545

Unit

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

VCBO

100

Vdc

VEBO

Vdc

400

mAdc

Emitter-Base Voltage
Collector Current Continuous

-400

Operating Junction Temperature

200

Total Device Dissipation ' Tc = 75*C

3.5

Watts

mW C

- 65 to ' 200

Tjmax = 200 C

Derate above 25 C

Storage Temperature Range

TS!<]

MOTOROLA RF DEVICE DATA

2-725

65 to . 200

MRF545, MRFC545

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwisenoted.)

Symbol

Min

V(BR)CEO

-70

Vdc

V(BR)CBO

-100

Vdc

V(BR)EBO

-3

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC = -1 mAdc. IB = 0)
Collector-Base Breakdown Voltage

C = -0.1 mAdc, Ie = 0)
Emitter-Base Breakdown Voltage

Vdc

(IE = -0.1 mAdc, lc = 0)

Collector Cutoff Current

'ces

-100

pAdc

-20

MAdc

(vCE = -so vdc, vBe = o,tc = 25o

Collector Cutoff Current

CBO

(Vcb = -80 Vdc. IE = 0)

ON CHARACTERISTICS
DC Current Gain

"FE

dC = -50 mAdc, VCE = -10 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

3.2

(VCB = -10 Vdc, Ie = 0, f = 1 MHz)

Junction Capacitance

Ccb

2.5

(Vcb = - io Vdc, Ie = o, f = 1 mhz)

Input Capacitance

Cib

(Veb = -3 Vdc, lc = 0, f = 1 MHz)

Current Gain-Bandwidth Product

1000

1250

MHz

dC = -50 mA, Vce = - 25 V, f = 250 MHz)

FUNCTIONAL TESTS

Maximum Available Gain

Gmax

15.5

12.7

dC = -50 mA, Vce = -25 V, f = 250 MHz)

IS21I2

Insertion Gain

dC = -50 mA, Vce = -25 V, f = 250 MHz)

- Vce - -- Ir =

25 V

SOmA

1200
S2ir

f = 250 MHz

900

vce

"Umax - (1 i<;..i2wi_i:,iZi ..

-25 V

600

~*eUmax~

- - |&2ir

100

200

500 700 1000

2000
f, FREQUENCY (MHz)

-20

-40

-60

-80

lC. COLLECTOR CURRENT (mA)

Rgure 1. Power Gain versus Frequency

Rgure 2. Gain-Bandwidth Product versus

Collector Current

MOTOROLA RF DEVICE DATA

2-726

-100

MRF545, MRFC545

1
I = 1MHz

B15

^s^

Cob

.Tii.

-ccb-

-1

-2

-3

-6

-9

-12

-15

-18

-21

-24

-27 -30

VCB. COLLECTOR BASE VOLTAGE (VI

VEB, EMITTER BASE VOLTAGE (V)

Rgure 4. Junction Capacitance versus Voltage

Rgure 3. Input Capacitance versus Voltage

CUR EN1
i

<-400

G-200
s
u

* 1

.-100
0

0
100

150

200

250

-10

-20

-30

-40

-50

-60

-70

-80

t, TEMPERATURE TO

Vce.COLLECTOR-EMITTER VOLTAGE (Vdc)

Rgure 5. Dissipation versus Temperature

Rgure 6. Safe Operating Area

MOTOROLA RF DEVICE DATA

2-727

-90

-100

MRF545, MRFC545

vce = -25 V
lC = -50 mA

Rgure 7. Input/Output Reflection Coefficient

versus Frequency (GHz)

Figure 8. Forward/Reverse Transmission

Coefficients versus Frequency

COMMON EMITTER S-PARAMETERS

vce

S21

S22

(Volts)

(mA)

(MHz)

IS11I

|S21I

IS12I

C<f>

IS22I

-10

-25

100

0.60

-161

8.7

101

0.03

0.47

250

0.61

-180

3.6

0.42

-39

0.66

163

1.9

81
62

0.06

500

0.12

0.38

-56
-87

-50

-100

750

0.72

154

1.3

0.19

0.40

1000

0.75

143

1.0

0.29

0.46

-102

100

0.61

-169

8.8

0.03

0.43

-36

0.38

250

0.62

177

3.7

0.06

500

0.66

161

1.9

0.13

0.35

-56

750

0.72

153

1.3

0.20

-86

1000

0.74

142

1.0

0.29

0.36
0.42

100

0.67

-178

5.6

0.03

0.40

-26

-25

-50

-100

-40

-102

0.70

170

2.3

0.07

0.36

-37

500

0.71

0.16

0.39

-61

0.76

155
142

1.2

750

0.9

0.27

0.40

-92

1000

0.82

128

0.7

0.39

0.43

-117

100

0.55
0.57

-155

9.9

102

0.03

0.49

-32

250

-176

4.2

0.06

0.43

-36

500

0.61

165

2.1

0.11

0.38

-50

1.4

0.41

-79

0.18
0.27

1.1

0.45

-96

250

-25

t-<t>
-34

750

0.68

1000

0.70

156
144

100

0.53

-162

10.6

101

0.03

0.44

-35

250

0.55

-180

4.4

0.06

0.39

-38

500

0.59

162

2.3

0.12

0.34

-50

750

0.65

154

1.5

0.19

0.36

-78

1000

0.67

143

1.2

0.27

0.40

-95

100

0.48

-169

9.3

0.03

-27

-52

250

0.53

174

3.9

0.07

0.43
0.37

500

0.54

159

2.1

0.15

0.40

750

0.60

1.5

0.24

0.39

-77

1000

0.65

146
132

1.1

0.34

0.41

-99

MOTOROLA RF DEVICE DATA

2-728

-33

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF546
The RF Line

NPN Silicon

High Frequency Transistor

lC = 600 mA
HIGH FREQUENCY
HIGH VOLTAGE
TRANSISTOR
NPN SILICON

... designed for high current, high frequency common base amplifiers used in medium
and high resolution color video display monitors.

Stripline Opposed Base Construction

Die Source 2X Common Base MRF548

Common Base Insertion Gain = 6 dB (Typ)

High Collector-Base Breakdown Voltage V(BR)CBO = 12 Vdc (Min)

Emitter Ballasted For Improved Ruggedness
Gold Top Metallization
Silicon Nitride Passivation

CASE 244A-01. STYLE 3

MAXIMUM RATINGS

Symbol

Value

UnH

VCEO

Vdc

Collector-Base Voltage

VcBO

120

Vdc

Emitter-Base Voltage

VEBO

Vdc

600

mAdc

Operating Junction Temperature

200

Total Device Dissipation (a Tc = 75CC

Wans

mW/C

Tstg

-65 to +150

Symbol

Max

Unit

Rfljc

13.9

"CArV

Typ

Max

UnH

Rating

CoUeclor-Emitter Voltage

Collector-Current Continuous

Derate above 75C

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwisenoted.)

Symbol

Characteristic

Min

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage dc = 2 mAdc, lg = 0)

V(BR)CEO

Collector-Base Breakdown Voltage dc = 0.2 mAdc, lg = 0)

V(BR)CBO

120

Emitter-Base Breakdown Voltage (Ie = 0.2 mAdc, lc = 0)

V(BR)EBO

Collector Cutoff Current (Vce = 80 Vdc, Vbe = 0, Tc = 25C)

ices

Collector Cutoff Current (Vcb = 80 Vdc, lg = 0)

ICBO

Vdc
Vdc

Vdc

200

pAtic

pAdc

ON CHARACTERISTICS

DC Current Gain dc = 100 mAdc, Vce = 10 Vdc)

hFE

200

DYNAMIC CHARACTERISTICS

Output Capacitance (Vcb = 10 Vdc, lg = 0, f = 1 MHz)

Cob

Collector-BaseCapacitance (Vcb - 10 Vdc, lr = 0, f = 1 MHz)

Ccb

Input Capacitance (Veb = 3 Vdc, f = 1 MHz)

Cjb

3.6
26

4.5

PF
PF
PF

FUNCTIONAL TESTS

Common Base Gain (Vcb = 10 V, lc = 200 mA, f = 250 MHz)

|S2ll2

MOTOROLA RF DEVICE DATA

2-729

4.5

MRF546

600

200
o

VCE, COLLECTOR-EMITTER VOLTAGE IVdcl

Rgure 1. Safe Operating Area

150

200

Rgure 2. Power Dissipation versus Temperature

16
= 1MK

100

TC. CASE TEMPERATURE ("CI

Ci b

6
Cob

Ccb
0

1 1 2

Veq,EMITTER-BASE VOLTAGE (Vdc)

Vcb- COLLECTOR-BASE VOLTAGE (Vdc)

Figure 4. Junction Capacitance

versus Voltage

Rgure 3. Input Capacitance versus Voltage

MOTOROLA RF DEVICE DATA

2-730

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF547

The RF Line

PNP Silicon

High Frequency Transistor

lC = -600mA
... designed for high-current, high-frequency common base amplifiers used in medium
and high resolution color video display monitors.

HIGH FREQUENCY
HIGH VOLTAGE
TRANSISTOR
PNP SILICON

Stripline Opposed Base Construction

Die Source 2X Common Base MRF549

Common Base Insertion Gain = 5.5 dB (Typ)

High Collector-Base Breakdown Voltage V(BR)CBO = ~100 Vdc lMm'

Emitter Ballasted for Improved Ruggedness
Gold Top Metallization

Silicon Nitride Passivation

MAXIMUM RATINGS

Symbol

Value

Unit

VcEO

-70

Vdc

Collector-Base Voltage

VCBO

-100

Vdc

Emitter-Base Voltage

VEBO

-3

Vdc

-600

mAdc

Operating Junction Temperature

200

Total Device Dissipation (a Tq = 75C

9
72

Watts
mW/C

Tstg

-65 to +150

Symbol

Max

Unit

RflJC

13.9

'OW

Rating

Collector-Emitter Voltage

Collector-Current Continuous

Derate above 75C

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

UnH

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage dc = -2 mAdc, Ib = 0)

V(BR)CEO

-70

Collector-BaseBreakdown Voltage dc = -0.2 mAdc, Ie = 0)

V(BR)CBO

-100

Emitter-Base Breakdown Voltage (lg = -0.2 mAdc, lc = 0)

V(BR)EBO

-3

Vdc

Collector Cutoff Current (Vce = -80 Vdc, Vbe = - TC = 25c>

ices

Collector Cutoff Current (Vcb = -80 Vdc, l = 0)

'CBO

Vdc

-200

pAdc

-40

fiAdc

ON CHARACTERISTICS

1 OC Current Gain dc = -100 mAdc, Vce = -10 Vdc)

"FE

DYNAMIC CHARACTERISTICS

Output Capacitance (Vcb = -10 Vdc, Ie = 0, f = 1 MHz)

Cob

Collector-Base Capacitance (Vcb = -10 Vdc,l = 0, f = 1 MHz)

Ccb

Input Capacitance (Veb = - 3 Vdc, f = 1 MHz)

Cib

5.1

3.6

4.5

pF
pF
pF

FUNCTIONAL TESTS

Common Base Gain (Vcb = -10 V, lc = -200 mA, f = 250 MHz)

IS21I2

MOTOROLA RF DEVICE DATA

2-731

4.5

5.5

MRF547

-800
1

% -600

8 l0

| 8

S 6

200

1 '
-

-20

-40

n
9

-60

100

Vce, COLLEaOR-EMITTER VOLTAGE (Vdc)

200

Rgure 2. Power Dissipation versus Temperature

Rgure 1. Safe Operating Area

f =

150

Trj, CASE TEMPERATURE It)

MHz

1 =

_'2

UQ.

MHz

l! \Vv

Vs.
*

2
0

-1

-2

-3

-6

VEB, EMITTER-BASE VOLTAGE (Vdc)

-9

-12

-15 -18

-21

-24

-27 -30

Vcb. COLLECTOR VOLTAGE (Vdd

Rgure 4. Junction Capacitance versus Voltage

Rgure 3. Input Capacitance versus Voltage

MOTOROLA RF DEVICE DATA

2-732

MRF548 (See MRF542)

MRF549 (See MRF543)

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF553
The RF Line
1.5 W

175 MHz

RF LOW POWER

TRANSISTOR
NPN SIUCON RF LOW POWER TRANSISTOR

NPN SIUCON

... designed primarily for wideband large signal predriver stages

in the VHF frequency range.
Specified @ 12.5 V, 175 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 11.5 dB

Efficiency 60% (Typ)

Cost Effective PowerMacro Package

Electroless Tin Plated Leads for Improved Solderability

"I1

MAXIMUM RATINGS

Symbol

Value

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

500

mAdc

3.0

Wans

mW/C

Tstci

-65 to +150

NOTES:
1. DIMENSIONING AND T0LERANC1NGPERANSI

2. CONTROLLING DIMENSION:INCH.
3. LEAD DIMENSIONS UNCONTROLLEDWITHIN
DIMENSIONN AND R.

Rating

Collector-Current Continuous

Total Device Dissipation (S Tc 75"C (1,2)

Derate above 75C

Storage Temperature Range

Unit

^ECU

H
'm

STYLE 2:

PIN 1.
2.
3.
4.

COLLECTOR
EMITTER
BASE
EMITTER

Y14.5M, 1382.

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

RflJC

'C/W

(DTc, Case temperature measured on collector lead immediately adjacent to body of package.
(2) The MRF5S3 PowerMacro must be properly mounted for reliable operation. AN938,
"Mounting Techniques for PowerMacro Transistor," discusses methods of mounting and
heatsinking.

DM
A

C
D
F

MHUKETERS
MIN
MAX
4.45
131

0.84
2.46
W

J
K

7.24

021

0.64

5.20

netHfS
MAX
Mm
0205

254

0.175
0.075

0.99

0.033

2.64

0.037

0.104

9.72
030

0.3(8
0.008

0383
0.012

8.12
1.65

0.285

3.25

1.01

2-733

0.039

0.320

0.065

0.128

0.025

CASE 317D-02

MOTOROLA RF DEVICE DATA

0.100

0.040

MRF553

ELECTRICALCHARACTERISTICS (Tc = 25C unless otherwise noted.)

Min | Typ | Max

Symbol

Characteristic

Unh I

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC = 10 mAdc, Ib = 0)

v(BR)CEO

Collector-Emitter Breakdown Voltage

V(BR)CES

Collector-Base Breakdown Voltage

(lC = 5.0 mAdc, Ie = 0)

V(BR)CBO

Vdc

Emitter-Base Breakdown Voltage

(IE = 1.0 mAdc, lc = 0)

V(BR)EBO

4.0

Vdc

(lC = 5.0 mAdc, Vbe = 0)

Collector-Cutoff Current

Ices

5.0

200

mAdc

(VCE = 15 Vdc. VBE = 0. TC - 25C)

ON CHARACTERISTICS
DC Current Gain

"FE

(lC = 250 mAdc, Vce = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance
(Vcb = 10 vdc, Ie = o, f = 1.0 mhz)

Cob

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

Rgure 1,2

Gpe

11.5

Figure 1,2

(Vcc 12.5 Vdc, P0ut = 1.5 W, f = 175 MHz)

Collector Efficiency

(VCc = 12-5 Vdc, Pout = 1-5 W, f = 175 MHz)

Load Mismatch Stress

No Degradation in
Output Power

(Vcc = 12-5 Vdc, Pout = 1-5 W, f = 175 MHz,VSWR s> 10:1 All Phase

Angles)
RGURE 1 140-175 MHz BROADBAND CIRCUIT SCHEMATIC

5xB
0 * D

=fl
.

CI 36 pF Mini Underwood
C2 47 pF Mini Underwood
C3 91 pF Mini Underwood
C4 68 pF Mini Underwood
C5, C9 1.0 fiF Erie Red Cap Capacitor
C6, C10 0.1 (iF. 35 V Tantulum
C7 470 pF Chip Capacitor
C8 2200 pF Chip Capacitor

Vrr =

\T | I Q -12C5V
C9 7tn ^C10
T_I
B11 *pC8
f"""i w
C7

/y\v
L6
I L6

Q-< Output

L1 3 Turns, #18 AWG, 0.210" ID, 3/16" Length

L2, L4, L7 0.62-. #18 AWG Wire Bent into "V"

L3, L6 60 x 125 x 250 Mils Copper Pad on 27 Mils Thick Alumina Substrate
L5 12 mH Molded Choke
L8 7 Turns, #18 AWG, 0.170" ID, 7/16" Length
L9 1.0", #18 AWG Wire with 5 Ferrite Beads
B Ferrite Bead

Board Material Glass Teflon, tr = 2.56, t = 0.0625" (See Photomaster, Figure 3)

R1 4.7 kil, 1/4 W

R2 100 fl, 1/4 W
D1 1N4148 Diode

MOTOROLA RF DEVICE DATA

2-734

MRF553

FIGURE 2 140-175 MHZ BROADBAND CIRCUIT

FIGURE 3 140-175 MHz TEST CIRCUIT PHOTOMASTER

NOTE: The Printed Circuit Board shown is 75% of the original.

MOTOROLA RF DEVICE DATA

2-735

MRF553

FIGURE 4 TYPICAL PERFORMANCE IN

BROADBAND CIRCUIT
100

80E

Gpe

70 fc

60 o

Pout'< 1.5W, r*CC= 12.5 Vdc

50 ^

P50

<oR

73 "

'Rl

- z 15

20 g
10

0
140

ISO

160

180

f, FREQUENCY (MHz)

RGURE 5 Z[n AND Zql versus COLLECTOR VOLTAGE, INPUT POWER, AND OUTPUT POWER

Zin

zol*

Ohms

Vcc = 7JV;P|

Vcc = 12JV;P,n

VCC = 7.5V;P^

Vcc = 1 V;P0ttt

Frequency
MHz

100 mW

200 mW

140

1.65-J3.6

2.0-J2.6

175

2.5-J5.6

2.3-J55

300 mW

50 mW

100 mW

150 mW

LOW

22 W

1.1 W

I0W

UVi

23-J1-2

1.7-}4.i

1.8-J3.1

13-12.7

9.9-jll.l

10.6-J5.1

10-J4.9

2B.3-J21.5

16-J20.5

16.3-J16.5

2.8-J4.0

2>j4.6

2.4-jU

2.4-J5.7

12.1-J145

7.2-J9.8

8.1-J5.4

30.8-J233

11.4-J20.9

11.1-jMJ

Zin

zol*

Ohms

Vcc = 7.5V;P,n

Vcc = 7.5V;P0Ut

Vcc = 1WV;P|

Vcc = 12JV;P0lrt

Frequency
KHz

50 mW

100 mW

200 mW

25 mW

50 mW

100 mW

1.25W

1.5 W

2.0 W

13 W

225W

3.0 W

2.5-J9.3

2.5-16-4

2.5-H-4

1.6-J10.7

2.5-J7.1

2J-J1.3

31.8-J9.2

32-ja9

30.2-J10.7

455-i7.2

45-2-J3.9

40-J4.5

Zol* = Conjugate oftheoptimum loadimpedance into which thedevice output

operatesat a givenoutputpower, voltage andfrequency.

MOTOROLA RF DEVICE DATA

2-736

MRF553

RGURE 7 POWER OUTPUT versus POWER INPUT

RGURE 6 POWER OUTPUT vorsus POWER INPUT

2.0

3.0

I
1.5

I 2.0
1.0
f = 175 MHz
7.5 Vdc

f = 175 MHz

Vtt =

VCc = 12-5Vdc

100

200

400

300

100

Pin, POWER INPUT (mW)

150

Pir). POWER INPUT (mW)

RGURE 9 POWER OUTPUT versus FREQUENCY

RGURE B POWER OUTPUT versus FREQUENCY

4.0

13.0

3.0
_Pjn -

^__=200mW
-

00 mW

f 2.0

Pin = 150mW

300 mW"

100 mW

50 mW

11.0

vcC = 7-5

150

140

vc : = 12.5

fdc

160
f, FREQUENCY (MHz)

170

180

150

140

170

RGURE 11 POWER OUTPUT versus COLLECTOR

VOLTAGE

VOLTAGE
4.0

1 1

160

f, FREQUENCY (MHzl

FIGURE 10 POWER OUTPUT versus COLLECTOR

4.0

Vdc

Pin = 150mW

Pjn = 150m SU-"

f = 1751 [Hz

f 140 ( Hz

100 m'

I10

= 1( ontvy,

5
5 2.0

>50m

2.0

i~~*

= ! OmW

H.0

""""

0
6.0

8.0

6.0

8.0

Vcc, COLLECTOR VOLTAGE (Vdcl

Vcc.COLLECTOR VOLTAGE (Vdcl

MOTOROLA RF DEVICE DATA

2-737

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF555

The RF Line

NPN Silicon
RF Low Power Transistor
1.5 W
470 MHz
RF LOW POWER
TRANSISTOR
NPN SIUCON

... designed primarily for wideband large signal predriver stages in the UHF frequency
range.

Specified @ 12.5 V,470 MHz Characteristics @ Pout = 1.5 W

Common Emitter Power Gain = 12.5 dB (Typ)
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability
MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VcEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

Vdc
mAdc

Collector-Current Continuous

400

Operating Junction Temperature

150

Total Device Dissipation (a Tc = 75C(1,2)

Watts

mW/C

Tstg

-65 to +150

Symbol

Max

Unit

RflJC

X/W

Derate above 75C

Storage Temperature Range

CASE 317D-02, STYLE 2

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (Tc = 25X unless otherwisenoted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-EmitterBreakdown Voltage dc = 5 mAdc, lg = 0)

V{BR)CEO

Collector-EmitterBreakdown Voltage dc = 5 mAdc, Vbe = 0)

V(BR)CES

Emitter-Base Breakdown Voltage (Ie = 0.1 mAdc, >c = 0)

V(BR)EBO

Collector Cutoff Current (Vce = 15 Vdc,Vbe = 0, Tc = 25X)

ices

Vdc

0.1

hFE

200

C0D

3.5

mAdc

ON CHARACTERISTICS

DC Current Gain dc = 100 mAdc, Vce = 5 Vdc)

DYNAMIC CHARACTERISTICS

OutputCapacitance (Vcb = 15 Vdc, Ie = 0,f = 1 MHz)

FUNCTIONAL TESTS (f = 470 MHz)

Gpe

12.5

Collector Efficiency(Vcc = 12-5 Vdc, Pout = 1.5 W)

Load Mismatch Stress

Common-Emitter Power Gain (Vcc = 12.5 Vdc, Pout = 1.5 W)

dB
%

No Degradation in Output Power

(Vcc = 15.5 Vdc, Pjn = 125 mW,

VSWR s> 10:1 ail phase angles)
(1) Tq, Case temperature, measured on collector lead immediately adjacent to body of package.
(2) The MRF555PowerMacro must be properly mounted for reliable operation. AN938,"Mounting Techniques in PowerMacro Transistor," discusses methods
of mounting and heatsinking.

MOTOROLA RF DEVICE DATA

2-738

MRF555

CI, C3, C6 0.8-11 pF Johanson

C2 15 pF Clamped Mica, Mini-Underwood
C4 36 pF Clamped Mica, Mini-Underwood

C5 470 pF Ceramic Chip Capacitor

C7 91 pF Clamped Mica, Mini-Underwood
C8 68 pF Clamped Mica, Mini-Underwood
C9 1 mF, 25 V Tantalum

LI 5 Turns #21 AWG, 5/32" I.D.

L2, L3 60 x 125 x 250 Mils Copper Pad on 27 Mil Thick

Alumina Substrate

L4, L5 7 Turns #21 AWG 5/32" I.D

Z1 1.29" x 0.16" Microstrip

22 0.70" x 0.16" Microstrip
Z3 2.18" x 016" Microstrip

B Bead, Ferroxcube 56-5S0-65/3B

PCB 1/16" Glass Teflon, 1 oz. cu. clad,

double sided, tr = 2.5

Fixed tuned for broadband response.

(See Figure 5 Photomaster)

Rgure 1.400-512 MHz Broadband Circuit

Pntit = 1.5W
vcc = 12.!>Vdc
-*-c pe
n c>
_,

IR .*

f.S3
450

425

400

475

20.
525

500

(FREQUENCY (MHz)

Rgure 2. Performance in Broadband Circuit

Vcc = 7.5 V

Zin

zol'

Ohms

VCC = 12-5V

Vcc = 7.5 V

VCC = 12-5 V

Pin = 50 mW

Pout 400 MHz = 1.5 W

Pout 450 MHz = 1.35 W
Pout 512 MHz = 1.05 W

Pout 400 MHz = 1.9 W

Pout 450 MHz = 1.45 W
P0lIt 512 MHz = 0.9 W

Frequency
MHz

Pin = 100 mW

400

2.9 - J2.7

1.9 - J3.1

18.0 - J13.4

12.2 - J19.7

450

2.2 - (0.8

2.6 - J4.0

21.6 - J9.9

20.2 - J18.6

512

3.5 - jl.2

2.6 - J2.6

20.1 - jl.O

23.4 - j'23.0

Zqi.' = Conjugate ofthe optimum loadimpedance intowhich thedevice output

operatesat a givenoutputpower, voltageand frequency.

Rgure 3. Z;n and Zql versus Collector Voltage, Input Power and Output Power

MOTOROLA RF DEVICE DATA

2-739

MRF555

Figure 4. 400-512 MHz Broadband Circuit

NOTE: The Printed Circuit Board shown is 75% of the original.

Figure 5. 400-512 MHz Broadband Circuit Photomaster

MOTOROLA RF DEVICE DATA

2-740

MRF555

2.5

it)

^-^Vcc= 12.5 Vdc

vcc

= 7.5 Vdc

Pjn= 150mW
1.5

1.5

^ Vcc = 7.5 Vdc

Pin = 100mW

= 50 mW

0.5

100

150

450

475

500

525

f. FREQUENCY (MHj)

Pjn,POWER INPUT ImW)

Rgure 7. Power Output versus Frequency

Figure 6. Power Output versus Power Input

Pjn = 150 mW,

= 12.5 Vdc

vcc

f = 400V Hz

__Pjn= 150mW
7)

Pj = 100mW
= 50 mW

-^H

= 50mW-

0? '
0

400

425

450

500

475

Vcc. SUPPLY VOLTAGE (Vdc)

I, FREQUENCY (MM

Rgure 9. Power Output versus Supply Voltage

Rgure 8. Power Output versus Frequency

f = 450 AKi

f 512 (Hz
'

ttrrMI.

a yV^i"
P

= 1SOmW

Hin = omw

,= 100mW1

n = Vi mW-

Vcc.SUPPLY VOLTAGE IVdc)

= 5C

Vcc- SUPPLY VOLTAGE IVdc)

Rgure 10. Power Output versus Supply Voltage

Rgure 11. Power Output versus Supply Voltage

MOTOROLA RF DEVICE DATA

2-741

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF557

The RF Line
1.5 W

870 MHz

RF LOW POWER
TRANSISTOR

NPN SILICON RF LOW POWER TRANSISTOR

NPN SILICON

... designed primarilyfor wideband large signal predriver stages

in the 800 MHz frequency range.
Specified (a 12.5 V, 870 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 8.0 dB

Efficiency 60% (Typ)

Cost Effective PowerMacro Package

Electroless Tin Plated Leads for Improved Solderability

MAXIMUM RATINGS

Rating

Symbol

Value

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

vCBO

Vdc
Vdc
mAdc

Emitter-Base Voltage

Unit

VEBO

4.0

Collector-Current Continuous

400

Total Device Dissipation < Tq = 75eC (1,2)

3.0

Watts

mW C

Derate above 75"C

Storage Temperature Range

Tstq

65 to

- 150

Thermal Resistance, Junction to Case

STYLE 2
PIN I. COLLECTOR
2. EMITTER
3 BASE
4 EMITTER
NOTES

I. DIMENSIONING ANDT0LERANCING PERANSI

Y14 5M. 1982.

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

Rrjc

2 CONTROLLINGDIMENSION. INCH
3 LEADDIMENSIONS UNCONTROLLEDWITHIN
DIMENSION N AND R
MILUMETERS

ID Trj. Case temperature measured on collector lead immediately adjacent to body of package

DIM

121 The MRF557 PowerMacro must be properly mounted lor reliable operation. AN938.

"Mounting Techniques in PowerMacro Transistor." discusses methods of mounting and

heatsinking.

N
R
T

INCHES

MAX

520

MIN
0175

1.91

254

0075

0033 I 0039

2-742

0205
0100

084
246

099

884

972

0348

03(3

021
724

030

0008
0285

0012

064

264

812
165
325
101

0097

0025

CASE317D-02

MOTOROLA RF DEVICE DATA

MAX

MIN
145

0104

:r:

0065
0.128

ocw_

MRF557

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)

Unft

Symbol

Min

V(BR)CEO

Vdc

V(BR)CES

Vdc

V(BR)EBO

4.0

Vdc

Characteristic

Max

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(Iq 5.0 mAdc. Ifl = 0)

Collector-Emitter Breakdown Voltage

Op " 6.0mAdc, Vbe " 0)

Emitter-Base Breakdown Voltage

(lg = 0.1 mAdc, lc = 0)

mAdc

0.1

<ces

Collector Cutoff Current

(Vce is vdc, Vbe 0, Tc " 2SC)

ON CHARACTERISTICS
50

hFE

DC Current Gain

dC 100 mAdc, Vce

200

3.5

5.0

S.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance
(VCb 15Vdc,lE

Cob

0. f = 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

Figures 1, 2

>pe

8.0

9.0

Figures 1, 2

(VCC " 125 Vdc. Pout 1.5 W, f = 870 MHz)

Collector Efficiency

(VCc - 125 Vdc, Pout = 1.6 W, f

870 MHz)

(VCC = 15-5Vdc, Pin = 225 mW, f

No Degradation in Output Power

Figures 1, 2

Load Mismatch Stress

870 MHz,

VSWR * 10:1 all phase angles)

FIGURE 1 800-880 MHz BROADBAND CIRCUIT

C97pC107p

Vcc

4-<-

-t-

Z4 -K

K Power

Power > Q
Input

j*
CI, C2, C5. C7 0.8-8.0 pF Johanson Gigatrim*
C3, C4 15 pF Clamped Mica, Mini-Underwood
C6 27 pF Clamped Mica, Mini-Underwood
C8 91 pF Clamped Mica, Mini-Underwood

CJy*

L1. L4 5 Turns #21 AWG, 5/32" ID

L2, L3 60 x 125 x 250 Mils Copper Tab on
27 Mil Thick Alumina Substrate

L5 7 Turns #21 AWG, 5/32* ID

Z1 1.65 x 0.163" Microstrip. Z0 = 50 fl

Z2 0.85 x 0.163" Microstrip. Zq = 50 fl

C9 68 pF Clamped Mica, Mini-Underwood

C10 1.0 uF, 25 V Tantalum
B Bead, Ferroxcube 56-590-65/3B

Z3 0.625 x 0.16r Microstrip. Zq = 50 fl

PCB 1/16" Glass Teflon, er = 2.56

Z4 1.35 x 0.163" Microstrip. Z0 = 50 fl

(See Photomaster Figure 3)

Fixed tuned for broadband response.

MOTOROLA RF DEVICE DATA

2-743

Output

MRF557

FIGURE 2 800-880 MHz BROADBAND CIRCUIT

FIGURE 3 800-880 MHz TEST CIRCUIT PHOTOMASTER

NOTE: The Printed Circuit Board shown is 75% of the original.

MOTOROLA RF DEVICE DATA

2-744

MRF557

RGURE 4 PERFORMANCE IN BROADBAND CIRCUIT

80
70

60g

_1C"

-o

-*-

-Ope.

50S
c

| ao

ao- 40 =

2. ao

| 10- 30

"15- 20".

2.0

S20- 10
_i

0
800

840

860

(FREQUENCY (MHz)

FIGURE5 Zi and Zo) versus COLLECTOR VOLTAGE. INPUT POWER AND OUTPUT POWER

Vcc = 7.5 V

Zin

2ol#

Ohms

Vcc = 12.5 V

Vcc = 7.5 V

Vcc = 12-5 V

P{n = 300 mW

Pj = 200 mW

Pout 806 MHz = 1.7 W

Pout 870 MHz = 1.4 W
Pout 960 MHz = 1.0 W

Pout 806 MHz = 2.1 W

Pout 870 MHz = 1.8 W
Pout 950 MHz = 1.1 W

806

2.4 + J3.9

2.4 + J3.1

14.7 - J4.4

13.6 - J12.8

870

2.5 + J4.6

2.7 + J3.7

17.2 - J8.6

16 - j'13.2

960

6.1 + J7.4

6.8 + J8.3

40 - J8.3

38 - J10.5

f
FREQUENCY
MHz

2qi* = Conjugate oftheoptimum loadimpedance intowhich thedevice output

operatesat a givenoutputpower, voltage andfrequency.

MOTOROLA RF DEVICE DATA

2-745

MRF557

RGURE 6 POWER OUTPUT versus POWER INPUT

RGURE 7 POWER OUTPUT versus FREQUENCY

2.5

"^ Vcc = '25Vdc

j2 2.0

2.0

Vcc = 7.5Vdc

pi. = mw

i
I 1.5

I 1.5
7.5 Vdc

1.0

_^_20j ImW
.^JOOmW

0.5
t = 870 MHi

100

200

300

400

800

820

840

Pjn. POWER INPUT ImW)

860

880

900

920

940960

f, FREQUENCY (Mrb)

RGURE 8 POWER OUTPUT versus FREQUENCY

RGURE 9 POWER OUTPUT versus SUPPLY VOLTAGE

J 1

Pin =: 00 mW.
1 = 8061 (Hz

2.0

Pjn = 300mW^

3.0
I

700 mW

1.5

200mVV^,^-

I 2.0

1.0

WmW.

100mW

g
2

3 1.0

0.5

vcc

= 12.5 Vdc

800820840880880900

920

940960

0
6.0

8.0

Vcc.SUPPLY VOLTAGE (VOLTS)

f. FREQUENCY (MHzl

RGURE 10 POWER OUTPUT versus SUPPLY VOLTAGE

RGURE 11 POWER OUTPUT versus SUPPLY VOLTAGE

4.0

1 = 960N Hz

f == 870* Hz

3.0
I

-~"""

|=3.0

200rnW

Pi, = 300mW

2.0

100 mV

B 1.0

iUO
""""

6.0

100 mW

8.0

6.0

Vcc,SUPPLY VOLTAGE IVOLTSI

8.0

Vcc, SUPPLY VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-746

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRFS59

The RF Line
0.6 W -

870 MHz

HIGH FREQUENCY
TRANSISTOR
NPN SILICON HIGH FREQUENCY TRANSISTOR
NPN SILICON

... designed for UHF linear and large-signal amplifier applications.

Specified 12.5 Volt, 870 MHz Characteristics
Output Power = 0.5 Watts
Minimum Gain = 8.0 dB

Efficiency = 50%

S Parameter Data From 250 MHz to 1.5 GHz

1.0 dB Compression > +20 dBm Typ

Ideally Suited for Broadband, Class A, Low-Noise Applications

Recommended As Driver for MHW808 and MHW820,

806-870 MHz Power Modules

MAXIMUM RATINGS
Unit

Symbol

Value

VcEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

Rating
Collector-Emitter Voltage

VEBO

3.0

Vdc

Collector-Current Continuous

150

mAdc

Total Device Dissipation @ Tc = 50C

2.0

Watts

mW/C

-65 to* 150

Derate above 50C

Storage Temperature Range

Tstd

=>^
^

- SEATING lUM

STYIE2:
PIN1. COLLECTOR
2. EMITTER
3. BASE
4. EMITTER

POWER DISSIPATION
2.5

2.0

NOTE:

DIMENSION DNOTAPPUCABIE INZONE N.

iSl.5

= 2 i.o

C
0
F

0.5

G
K
I

100

150

MIUMETERS
MAX
mm
444
521
254
in
0.99
0.64
OX
0.20
1.14
076
813
12*
1054
1143
-

INCHES
KN

MAX

0175

0205

0075

0.100

0033

0.039

oooa

0012

0030
0295
0415

0.045

2(10
CASE 317-01

Tc.CASE TEMPERATURE (C)

MOTOROLA RF DEVICE DATA

2-747

0320
0.450
0.055

MRF559
ELECTRICAL CHARACTERISTICS (Tc= 25C unless otherwise noted)

Characteristic

| Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

Vdc

(lC = 5.0 mAdc. Ib = 0)

Collector-Base Breakdown Voltage

V|BR)CB0

v(BR)EBO

3.0

dC=100pAdc, lE = 0)
Emitter-Base Breakdown Voltage

(lE=100AiAdc,lc = 0)
Collector Cutoff Current

'CES

(VCE=16Vdc.VBE = 0)

1.0

mAdc

ON CHARACTERISTICS
DC Current Gain

hFE

200
-

dC = 50 mAdc. Vce ~ '0 Vdc)

DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product

3000

2.0

dC = 100 mAdc. VCe = 10 Vdc. f = 200 MHz)

Output Capacitance

C0b

2.5

MHz

(Vcb = 12.5 Vdc, lE = 0. f = 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

GpE

f = 870 MHz

(VCc = 12.5 Vdc, Pout = 0.5 W)

8.0

9.5

f = 512 MHz

Collector Efficiency

f = 870 MHz

(VCc = 12.5 Vdc. Pout = 0.5 W)

13
50

f = 512 MHz

TYPICAL PERFORMANCE @ VCc = 7.5 V

Common-Emitter Amplifier Power Gain

f = 870 MHz

(VCc = 7.8 Vdc, Pout = 0.5 W)

GpE

6.5

f = 512 MHz

Collector Efficiency

f = 870 MHz
f = 512 MHz

(VCC= 7.5 Vdc. Pout = 0.5 W)

FIGURE 1 -

10
70

870 MHz TEST FIXTURE

t>T-L
VCC ^T07 T106
IO

1 Z5

DUT

}^C

L3
I L2

OO-^eK

I-

P^c

CI. C2. C4. C5 1.0-10 pF Johanson

C3. C6 0.001 pF Chip Capacitor

Z1 50n 1.5 cm
Z2 30 n 2.5 cm

C7 I.O^FTantulam

Z3 50 tt 2.0 cm
Z4 50 n 1.2 cm
Z5.Z6 5011 1.25 cm

LI, L4 4 Turns #26 AWG, 0.3 cm ID.0.4 cm Long

L2. L3 Ferrite Bead

Microstrip Elements r = 1.0

MOTOROLA RF DEVICE DATA

2-748

MRF559

FIGURE 2 -

FIGURE 3 OUTPUT POWER versus FREQUENCY

OUTPUT POWER versus INPUT POWER

VCC =7.6 V

f = 512 MHz

_Pin=100mW

f 600
vcC = '2

= 50mW

vcc = 7.5 V

svy

= 25 mW

S200

1200

450

525

500

475

I. FREQUENCY (MHt)

Pin. INPUT POWER (mW)

FIGURE 4 OUTPUT POWER versus COLLECTOR VOLTAGE

FIGURE 6 OUTPUT POWER versus FREQUENCY

f = 512 MHz

VCC = 126 V
1

I
P!n = 75

Pi =40mW

y= SO mW
I

600

= 25mW

5
o

400

<00

5mW

1200

7.5

5.0

12.5

450

525

475

f. FREQUENCY (MHt)

VCr> C0LUCT0R VOLTAGE (V)

FIGURE 6 - Zin AND Z0L versus COLLECTOR VOLTAGE. INPUT POWER. AND OUTPUT POWER
zol*

Zin
FREQUENCY
MHz

OHMS

VCC = 7.6-12.SV
15 mW

VCC = 12-6V

VCc =7.5 V
0.60 W

0.76 W

0.26 W

0.50 W

0.76 W

20-J68

42-J60

52-J54

26 mW

60 mW

0.26 W

31-J49

44-J34

42-J4.9

400

4.3-jl3.3

4.9-jl 1.0

5.7-J8.7

440

3.9-J8.8

4.5-J8.7

5.4-J6.9

27-J42

39-J30

40-J6.9

19-J62

37-J64

49-jSO

480

3.5-J4-4

4.1 -j6.5

6.0-J4.3

24-J36

36-J25

39-J9.0

18-J56

33-J48

47-J46

520

3.2-J2.2

3.8-J4.3

4.7 -j1.7

22-J30

34-J20

37-J12 | 17-J52

31-J44

47-J42

Zol* = Conjugate oftheoptimum load impedance into which thedevice output

operatesat a givenoutputpower, voltage andfrequency.

MOTOROLA RF DEVICE DATA

2-749

MRF559

FIGURE 7 OUTPUT POWER versus INPUT POWER

FIGURE 8 -

OUTPUT POWER versus FREQUENCY

f = 870 MHz

VCC = 7.6 V
BOO

_^y
?600
6.

Vcc =

12.5

| 600

Vqc =7.5 V

"pin-

S
o

400

\~\

400

= 50mW

j...

).. .

= 25mW

.200

120

860

Pjn.INPUT POWER (mW)

FIGURE 9 OUTPUT POWER versus COLLECTOR VOLTAGE

FIGURE 10 -

OUTPUT POWER versus FREQUENCY

VCC = 12.5 V

f = 870 MHz
600

890

f. FREQUENCY (MHr)

Pj= 100mW^
Pin = 75mW

| 600

600

:50 m1V

=50 mV

t 400

t 400
= 25m' H

7.5

=25 mW

12.5

830

860

Vcc. COLLECTOR VOLTAGE (V)

FIGURE 11

Z[ AND Zql versus COLLECTOR VOLTAGE. INPUT POWER.

Zin

FREQUENCY
MHz

800

630

I. FREQUENCY (MHt)

AND OUTPUT POWER

zol*

OHMS

VCC =7.6 V

Vcc =7.6-12.5 V
0.26 W

0.60 W

VCC = 12.5 V

25 mW

50 mW

100 mW

2.9 + J2.2

3.8+J4.4

4.7 + J6.5

15.0-J36.8 22.7-J30.6 27.1 -J22.6 14.6-J43.6 17.2-J39.7 23.4-J37.7

0.76 W

0.25 W

0.60 W

0.76 W

850

3.2 + J3.5

3.8+J5.2

4.8 + J7.4

15.7-J35.3 23.9-J28.7 27.3-j21.5 I6.3-J40.8 17.8-J39.5 23.7-J36.8

900

3.8+J5.7

4.4 + J7.0

5.4+J8.7

16.4-J33.7 25.1-J27.0 27.5-J20.5 17.3-J38.2 18.3-J39.3 23.9-J36.0

950

4.1 +J7.4

4.5 + J8.8

5.5+J10.1 17.0-J32.2 26.3-J25.2 27.6-j19.4 I7.2-J36.1 20.1 -J38.5 24.5-J35.6

Zol* ~ Conjugate oftheoptimum loadimpedance intowhich thedevice output

operatesat a givenoutputpower, voltageand frequency.

MOTOROLA RF DEVICE DATA

2-750

MRF559

FIGURE 12 GAIN versus FREQUENCY

VcE =10 V, lc =60-100 mA

\
IS2II2
lHSn|2| (HS22I2I

Gu(max)
is2 ll2

500

200

Gu(ma)

700

1500

1000

2000

I. FREQUENCY (MHz)
FIGURE 14 FIGURE 13 -

GAIN versus COLLECTOR CURRENT

NOISE FIGURE AND ASSOCIATED GAIN

versus COLLECTOR CURRENT

Vce = 10 V

VCE = 10 V
lb

"u(mai

_is2il2^

Gu(mai

- -

,_^''

g3
o
/

za a

IS21I2

8.0

Gnf

oS '2

5 8.0
""

"*-.

f=5 00 MHi

-f=1 0 GHz

4.0 -

__.

f = iOOMr z
1=1.0 GHz

z z 4.0
C9

| |

"nf

120

100

lC.COLLECTOR CURRENT (mA)

lC. COLLECTOR CURRENT <mA)

FIGURE 18 CURRENT GAIN BANDWIDTH PRODUCT
FIGURE 16 -

versus COLLECTOR CURRENT

VcE = 10 V

OUTPUT CAPACITANCE versus

COLLECTOR BASE VOLTAGE

_4.0

Cot,

& 2.0
SB

Jeb_

s 1.0

1.0

120

2.0

4.0

6.0

8.0

Vcb. COLLECTOR BASE VOLTAGE (VOLTS)

lr>C0UECT0R CURRENT (mA)

MOTOROLA RF DEVICE DATA

2-751

MRF559

FIGURE 17 - COMMON EMITTER SCATTERING PARAMETERS

S11

vce

(Volts)

(mA)

(MHz)

ism

5.0

250

0.72

500
1000

100

150

IS21I

lS-121

IS22I

-161

6.20

0.057

0.30

0.73

179

3.16

0.069

0.27

-94

0.76

158

1.62

0.105

0.27

-119
-137

14
-91

1500

0.82

142

1.08

0.155

0.41

250

0.70

-173

7.17

0.045

0.26

500

0.70

172

3.63

0.073

0.20

-128

1000

0.74

152

1.90

0.134

0.21

-157
-167

-123

1500

0.79

136

1.32

0.196

0.32

250

0.72

-178

7.63

0.038

0.27

-139

0.23

-141

500

0.72

170

3.85

0.068

1000

0.75

153

2.01

0.129

0.81

137

1.40

0.188

0.23
0.32

-162

1500
250

0.73
0.74

179

7.34

0.036

0.26

-143

169

3.70

0.067

0.22

-144

1.94

0.130

0.24

-166

500

150

S22

S12

S21
14

-164

1000

0.76

153

1500

0.81

138

1.36

0.191

0.32

-167

250

0.78

176

5.19

0.033

0.22

-131

500

0.78

167

2.76

0.065

0.21

-131

1000

0.80

151

1.49

0.129

0.24

-155

1500

0.85

135

1.05

0.191

0.35

-161

250

0.69

-157

7.03

0.050

0.34

-67

500

0.70
0.74

-178

0.060

0.32

160

3.59
1.84

1000

0.094

0.29

-94

1500

0.81

142

1.20

0.148

042

-121

-93

-69

250

0.67

-168

8.30

0.039

0.24

500

0.68

176

4.25

0.060

0.21

-89

1000

0.72

158

2.19

0.109

0.19

-114

1500

0.78

142

1.47

0.165

0.31

-134

250

0.68

-174

8.88

0.035

-110
-128

500

0.68

172

4.49

0.060

0.21
0.18

1000

0.72

155

2.31

0.113

0.17

1500

0.77

139

1.58

0.169

0.28

-140

250

0.68

-178

8.49

0.03

0.19

-104

500

0.69

170

4.32

0.06

0.17

-97

1000

0.72

153

2.25

0.12

0.17

-123

1500

0.78

137

1.53

250

0.72

178

6.53

0.18

0.28

-137

0.029

0.22

-71

500

0.73

169

3.37

0.056

0.24

-75

1000

0.76

152

1.79

0.22

137

1.22

0.175 1

-105

1500

0.83 |

0.112

0.34

-129

MOTOROLA RF DEVICE DATA

2-752

MRF559

FIGURE 18 - TUNABLE TEST FIXTURE

FIGURE 19 - PRINTED CIRCUIT BOARD LAYOUT

NOTE: The Printed Circuit Board shown is 75% of the original

MOTOROLA RF DEVICE DATA

2-753

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF571
MRF572
MRFC572

The RF Line

NPN SIUCON HIGH FREQUENCY TRANSISTORS

... designed for low-noise, wide dynamic range front end am

plifiers,low-noise VCO's, and microwavepower multipliers.

Low Noise

High Gain

Available in Low Cost Plastic, High Reliability Ceramic or Die

State-of-the-Art Technology

fT = 8.0 GHz @ SOmA

NF = 1.0 dB @ SOO MHz
NF = 1.5 dB @ 1.0 GHz
NF = 2.5 dB @ 2.0 GHz

Fine Line Geometry

Ion Implanted Arsenic Emitters

Gold Top Metallization and Wires

Silicon Nitride Passivation

HIGH FREQUENCY

Fully Characterized

TRANSISTORS
NPN SILICON

MRF571

MRF572

Macro-X
Case 317-01

Case 303-01

Style 2

Style 1

MRFCS72

MAXIMUM RATINGS

Chip

Ratings

Symbol

Values

Unft

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

3.0

Vdc

Collector Current Continuous

mAdc

Total Device Dissipation #Tc = 50C'1'

1.5

1.0
10

0.75
5.0

Watts
mWVC

-65 to +150

-65 to +200

Derate above Tc = 50C

Tj = 200C
max

Storage Temperature

Tstg

-65 to +200

NOTE 1. Cato temperaturemeasured on collector lead immediately adjacentto bodyof package.

MOTOROLA RF DEVICE DATA

2-754

MRF571, MRF572, MRFC572

ELECTRICAL CHARACTERISTICS (Tc = 25Cunless otherwise noted.)
Symbol

Characteristic

Min

Max

Typ

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage dc = 10 mAdc. Ie = 0)

v(BR)CEO

Collector-Base Breakdown Voltage (lc = 0.1 mAdc, Ig 0)

V(BR)CBO

Emitter-Base Breakdown Voltage (Ie = 50 i/Adc, lc = 0)

V(BR)EBO

2.5

Collector Cutoff Current (Vcb 8- Vclc' *E " >

Vdc
Vdc

pAdc

'CBO

ON CHARACTERISTICS

DCCurrent Gain dc = 30 mAdc, Vce = 50 Vdc>

300

hFE

DYNAMIC CHARACTERISTICS

Collector-BaseCapacitance (Vcb 6-0 Vdc, Iff = 0, f = 1.0 MHz)

1.0

0.7

Ccb

GHz

Current Gain Bandwidth Product

(VCE " 80 Vdc. lC " 50 mA. f = 1.0 GHz)

FUNCTIONAL TESTS
dB

GNF

Gain (w Noise Figure

16.5

f = 0.5 GHz
f = 1.0 GHz

(lC = 10 mAdc, Vce = 6.0 Vdc)

Noise Figure

(lC = 10 mAdc, Vce = 6.0 Vdc)

MRF571
MRF572

1.0
1.5

f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz

2.8

f = 2.0 GHz

2.5

2.0

RGURE 1 Ccb, COLLECTOR-BASE CAPACITANCE

FIGURE 2 Cjb. INPUT CAPACITANCE

versus VOLTAGE

versus EMITTER BASE VOLTAGE

1.25

\^
\

,sv

0.75

or 2.0

**
"*--.

MRF572

MRPS71

'-.

MIF572

MRF5) 1

L,..0

1 0.5

8 025

f = 1.0 MHz

f = 1 0 MHz

1.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

1.0

3.0

2.0

VBe. BASE-EMITTER VOLTAGE (Vdc)

Vcb, COLLECTOR-BASE VOLTAGE (Vdc)

RGURE 4 MRF572 GAIN AT NOISE RGURE

AND NOISE RGURE versus FREQUENCY

RGURE 3 MRF571 GAIN AT NOISE RGURE AND

NOISE RGURE versus FREQUENCY

5.0

vce = 6.ov
"IC= 5J9 mA

4.0

VCE = 6.0 V
"IC = 5 0 mA

4.0

GNF

3.0S

^NF
15

o
UJ z

2.0 5

,?10

5.0

0.15

0.2

0.6

1.0

1.5

0.15

2.0

0.2

0.3

0.6

I, FREQUENCY (Grh)

f, FREQUENCY (GHz)

MOTOROLA RF DEVICE DATA

2-755

1.0

1.5

2.0

MRF571, MRF572, MRFC572

RGURE 5 MRF571 and MRFS72 GAIN AT NOISE
RGURE AND NOISE RGURE versus COLLECTOR CURRENT
i

RGURE 6 fr, CURRENT GAIN-BANDWIDTH PRODUCT

versus COLLECTOR CURRENT

5.0

Gnf@500MHz

1 10

4.0

3.0

/
f

Vdc-

Vet

Gnf@L0GHz

Vw -

g 6.0

(triUA-

[email protected]<

2.05

f 4.0
3

NF@500MHz

"s.

t
1.0

vCe = 6.ov

& 2.0
oc

1= 1.0 GHz

73
U

* 0

lC. COLLECTOR CURRENT (mA)

100

lC. COLLECTOR CURRENT (mA)

RGURE 7 GAmax. MAXIMUM AVAILABLEGAIN

RGURE 8 1.0 dB COMPRESSION FT.

versus FREQUENCY

AND THIRD ORDER INTERCEPT

+ 50

1 I

Ik* .eAnw-liJK*
1*121
Y
1

d,k * 1
+ 40

II
vce = 8.0V
lC = 50mA

MRF572

1 dB

Comp.Pt

Order

Vcc = 10 Vdc
'c = 50mA

MRFS??^

^ 3rd Order Products

+ 5.0
0.6

1.0

*f = 500 MHz/
""N = 1000 MHz

0
-10 -5.0

3.0

+ 5.0

f, FREQUENCY (GHz)

+10

+15

+20

+25

+30

+35 +40

P;r. INPUT POWER (dBml

RGURE 9 MRF571 Gumax and|S2il2

RGURE 10 MRF572 Gumax and |S2il2

versus FREQUENCY

IS21I2

*unm 11 - |S,1|2)(1 - tS22|2|

G(jmax

vc E = aov
<c = 50mA

5 20

cT 20
G Umax'

3 ,5

H 21

f*1

-Vce = B.0V
IC = 50mA
z

\<\ 21 2 S

s
e

-Gur
50

0.15

5.0

0.6

1.0

1.5

2.0

0.15

3.0

fell*
""

(1 - ISuPld - IS22IZ)
1

0.2

111

0.6

f. FREQUENCY (GHz)

MOTOROLA RF DEVICE DATA

2-756

1.0

1.5

2.0

3.0

MRF571, MRF572, MRFC572

MRF571

MRFS71

INPUT/OUTPUT REFLECTION COEFRCIENTS

versus FREQUENCY (GHz)

FORWARD/REVERSE TRANSMISSION
COEFFICIENTSversus FREQUENCY (GHz)

Vqe = 60 V, lc = 6.0 mA

Vce = 60 V, lc = 5.0 mA

MRF571 COMMON EMITTER S-PARAMETERS

Sll

S22

Si2

S21

VCE

(Volts)

(mA)

(MHz)

isnl

IS21I

IS12I

IS22I

6.0

5.0

200

0.74

-86

129

0.06

-42

-143
178
158
140

10.5
5.5
3.0

0.08

0.09

2.0

0.11

500

0.62

1000

0.61

1500

0.65

2000

0.70

200

0.64
0.58
0.59
0.63
0.67

500
1000

1500
2000
50

200
500
1000
1500
2000

8.0

5.0

0.56
0.57
0.60
0.62
0.66

1.6

0.14

0.69
0.41
0.28
0.26
0.27

-111

0.04

0.53

-59

-160

6.9

0.06

0.27

-77

168

3.7

0.09

0.16

-91

151

2.5

0.12

0.16

-113
-118

134

2.0

0.16

20.4

102

0.02

0.27

-98

8.4

0.05

0.14

-130

4.4

0.09

0.13

2.4

0.18

68
62

0.11
0.13
0.11

-164

2.9

0.06
0.08
0.09
0.10
0.13

0.71
0.43
0.31
0.29
0.29

-39
-54

0.05
0.07
0.10
0.13
0.18

-60

0.54
0.32
0.15
0.16
0.16

56
67

0.28
0.16

-98

0.06
0.11
0.10

-130
-146
-137

0.75

-83

10.7

129

0.62

-140

5.1

1000
1500
2000

0.60
0.64
0.69

-179
159
141

3.7

2.1

1.7

200

0.64

15.1

120

500

0.52

7.1

1000
1500
2000

0.52

-99
-152
170
150
133

3.7

2.0

200

0.52
0.52

-153

19.6

102

178

8.1

0.03
0.05
0.10

2.5

38
45

45
54
56

500
1000

0.56

157

4.1

86
73

1500

0.54

139

2.8

0.13

2.2

0.19

0.59

-99

-160
176
156
152
127

200

2000

-69
-88

118
93
77
64
53

500

0.52
0.57

-59

126

MOTOROLA RF DEVICE DATA

2-757

-175
-178

-62
-80
-91

-75
-82
-108
-107
-92

MRF571, MRF572, MRFC572

MRF572
INPUT/OUTPUT REFLECTION

MRF572

FORWARD/REVERSE COEFRCIENTS

COEFFICIENTS versus FREQUENCY (GHz)

versus FREQUENCY (GHz)

Vqe = 6.0 V. lc = 5.0 mA

Vce = 6.0 V, lc = 5.0 mA

+ 105'

+90*

MRF572 COMMON EMITTER S-PARAMETERS

Sl1

S21

S22

VCE

(Volts)

(mA)

(MHz)

ISllI

fell

IS12I

|S22l

<.<f>

6.0

5.0

200

0.81

-73

10.9

134

0.06

0.74

-40
-64

8.0

5.0

500

0.68

102

0.09

0.66

-130
-167

6.1

1000

3.3

1500

0.66

174

2.3

22
22

2000

0.68

161

1.8

0.10
0.10
0.11

0.43
0.29
0.27
0.29

200

0.72

-101

15.9

123

0.05

0.57

-58

500
1000
1500
2000

0.66

7.7

0.29

-86

4.0

0,19

2.7

2.1

63
51

0.06
0.08
0.09
0.10

0.66
0.67

-150
-178
166
155

0.19
0.20

-103
-122
-129

200

0.67

-154
-177
167
157
148

21.8

104

0.02

0.69

500

0.68

1000

0.70

1500
2000

0.73

0.71

9.0
4.5
3.0
2.3

-77
-94

-104

0.03

0.06

0.30
0.17
0.14

0.08

0.10

59
55

0.16
0.17

136

0.06
0.08
0.09
0.10
0.11

0.75
0.46
0.31
0.29
0.30

45
32
33
36

0.60
0.31
0.20
0.19

-104
-111

-94
-129
-151
-160
-161

200

0.83

-69

500

0.71

-125

10.9
6.3

1000
1500
2000

0.64

-164

3.5

0.65

2.4

0.66

176
163

1.8

80
63
49

0.74

-94

16.2

125

0.05

0.65
0.64
0.65
0.67

-146
-176
168
156

7.9
4.2

0.06

0.07

2.2

63
50

0.09
0.10

0.20

0.62

-150

22.7

104

0.02

0.30

-81

0.64
0.68
0.69
0.70

-174

9.4
4.8
3.2
2.4

0.03
0.05
0.07
0.09

0.15
0.10
0.13
0.15

-107

200
500
1000
1500
2000
200
500
1000
1500
2000

167
160
147

2.8

103

61
50

MOTOROLA RF DEVICE DATA

2-758

30
24

58
58
55

-36
-57
-68
-84
-94
-51
-74
-87

-126
-140
-140

MRF571, MRF572, MRFC572

MRF571 CONSTANT GAIN and NOISE RGURE CONTOURS

+1260
1

VCE = 6.0 V,IC = 5.0 mA

f = 500 MHz
REGION OF INSTABILITY

+J500
f(GHz)

NF OFT(dB)

Rn(fl)

NF50 O (dB)

0.5

0.9

9.3

1.3

TMS NF OPT

0.49 Z.740

0.58

Vce = 6.0 V, lc = 5.0 mA

f = 1.0 GHz

f(GHz) NF OPT(dB) Rn(Q)

1.5

1.0

TMS NF OPT

2.2

0.48 ^.134

TMS

TML

0.89Z.-179"

0.81 Z.669

MOTOROLA RF DEVICE DATA

2-759

NF50 O (dB)

7.5

MRF571, MRF572, MRFC572

MRF572 CONSTANT GAIN and NOISE RGURE CONTOURS

VCe = 6.0 V.I = 5.0 mA

f = 500 MHz

E3 REGION OF INSTABILITY
f(GHz)

Rn(fl)

NF (SOW

nws NF OPT

0.5

17.1

1.5

0.43 Z. 57

NFOPT

0.55

1.0

Vce = 6.0 V, lC = 5.0 mA

f = 1.0 GHz

f(GHz)

NFOPT

Rn(Q)

NF50 (fl) (dB)

1.0

1.5

6.0

2.0

TMS NF OPT

0.56 Z 116

0.93

MOTOROLA RF DEVICE DATA

2-760

MRF571, MRF572, MRFC572

MRF571 1.0 GHz TEST CIRCUIT

RFC2

RB^ R1

RFC1

vbb

C3 7^ Tf; C4

Input >--CZrO*0-{

VK-200, Ferroxcube

C1.C2.C6
C5, C7
C3. C8
C4. C9

560 pF Chip Capacitor

0.018 pF Chip Capacitor
0.1 pF Mylar Capacitor

RFC1. RFC2
Bead

Microstrip, See Photomaster

Ferrite Bead, Ferroxcube 56-590-65/3B

1.0 pF Electrolytic Capacitor

Board Material

0.0625" Teflon Fiberglass tr = 2.5 0.05

2.7 kn

Z1-Z9

MRF571 TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-761

MRF571, MRF572, MRFC572

MRF572, 1.0 GHz TEST CIRCUIT

VBB

input y CJ I

H^n

Output

C4. CIO

560 pF Chip Capacitor

0.018 pF Chip Capacitor
0.1 pF Mylar Capacitor
1.0 pF Electrolytic Capacitor

2.7 kll

CI. C2. C6. C7

C5. C8
C3. C9

RFC1. RFC2

VK-200. Ferroxcube

Z1-Z7

Microstrip, See Photomaster

Bead

Ferrite Bead, Ferroxcube 56-590-65 3B

Board Material

0.031" Teflon Fiberglass tr = 2.5 - 0.05

MRF572 TEST CIRCUIT

i on:

MOTOROLA RF DEVICE DATA

2-762

MRF571, MRF572, MRFC572

PHOTOMASTER OF MRF571 CIRCUIT LAYOUT

NOTE: The Printed Circuit Board shown is 75% of the original.

PHOTOMASTER OF MRF572 CIRCUIT LAYOUT

NOTE: The Printed Circuit Board shown is 75% of the original.

MRFC572 CHIP TOPOGRAPHY

Nominal Chip Size: 0.015" x 0.016" x 0.005"

Front Metallization: Gold
Back Metallization: Gold

Emitter/Base Bond Pad: 2.2 x 2.2 mil

#Emitter Fingers: 22
#Base Fingers: 23
Emitter Diffusion: Ion-Implanted Arsenic

MOTOROLA RF DEVICE DATA

2-763

MOTOROLA

SEMICONDUCTOR

MRF580,A
MRF581,A

TECHNICAL DATA

MRFC581,A

The RF Line
NPN SILICON HIGH FREQUENCY TRANSISTORS

... designed for high current low power amplifiers up to 1.0 GHz.
Low Noise (2 dB (a 500 MHz)

lC = 200 mA

Low Intermodulation Distortion

LOW NOISE
HIGH FREQUENCY
TRANSISTORS

High Gain

State-of-the-Art Technology

NPN SILICON

Fine Line Geometry

Arsenic Emitters

Gold Top Metallization

Nicrome Thin-Film Ballasting Resistors

Excellent Dynamic Range
Fully Characterized

High Current-Gain Bandwidth Product

(fr = 5 GHz Ui Ic = 75 mA)

MRFC581.A

MRF580.A

MRF581.A

[^P"*^^J
Case 317A-01

MAXIMUM RATINGS

Case 317-01

Style 2

Chip

Style 2

Ratings

Symbol

MRFC581

MRFC581A

MRF580

MRF580A

MRF581

MRF581A

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

Unit

vEBO

2.5

Vdc

Collector Current Continuous

200

mAdc

Total Device Dissipation (a Trj 50:C(1)

1.67

1.2

200 C max

1.2

Watts

mW/*C

-65 to +150

-65 to -150

Derate above Tq = 50C

Operating and Storage Junction
Temperature Range
NOTE 1. Case temperature measured on collec

TJ. TStg
or lead imrr

-65 to *200

ediately adj cent to body ?f package.

MOTOROLA RF DEVICE DATA

2-764

MRF580A, MRF581A, MRFC581A

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.)
Symbol

Min

MRF580/581
MRF580A/581A

V(BR)CEO

MRF580/581

V(BR)CBO

Characteristic

typ

Unit

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC = 1.0 mAdc. Ib = 0)

I Collector-Base Breakdown Voltage

C = 1.0 mAdc, l = 0)

Vdc

15
36

MRF580A/581A

Vdc

Emitter-Base Breakdown Voltage

2.5

v(BR)EBO

E = 0.10 mAdc, lc = 0)
Emitter Cutoff Current

'EBO

100

/uAdc

100

MAdc

(Veb = 2.0*Vdc, VBE = 0)

Collector Cutoff Current

<CBO

(VCb = 15 Vdc, Ie = 0)
ON CHARACTERISTICS

DC Current Gaind)

MRF580/581

(lC = 50 mAdc, Vce

5.0 Vdc)

hFE

MRF580A/581A

200

250

DYNAMIC CHARACTERISTICS

Collector Base Capacitance

Ccb

2.0

1.4

5.0

2.0

3.0

1.8

2.5

(Vcb = io vdc, i = o, f = 1.0 mhz)

Current-Gain Bandwidth Productl2)

GHz

(lC = 75 mAdc. Vce =.10 Vac, f = 1.0 GHz)

FUNCTIONAL TESTS

Noise Figure, Figure 19

MRF580 581

dc = 50 mAdc, Vce = 10 Vdc, f = 0.5 GHz|

Power Gain at Optimum Noise Figure, Figure 19

MRF5B0A/581A

MRF580.A

Gnf

MRF581.A

Qnf

15.5

dC = 50 mAdc. Vce = 10 Vdc, f = 0.5 GHz)

Power Gain at Optimum Noise Figure, Figure 19

(lC = 50 mAdc, Vce = 1 Vdc, f = 0.5 GHz)

Maximum Unilateral Gain

MRF580,A(2)

Gu max

MRF581,A(2)

GU max

MRF581.AI3)

IMD(d3)

(lC = 75 mAdc, Vce = 10 Vdc, f = 0.5 GHz)

Maximum Unilateral Gain

dC = 75 mAdc, Vce = 10 Vdc, f = 0.5 GHz)

Intermodulation Distortion, Figure 18

-65

(Vce 1 V. lc = 75 mA, Vout = +50 dBmV)

NOTES:

1. 300 ps pulse on Tektronix 576 or equivalent.

2. Characterized on HP8542 Automatic Network Analyzer.

|S21|Z

GUmax "* II - |Sn|2)(1 - |S22|2|

3. 2 Tones. II = 497 MHz, 12 = 503 MHz. 3rd Order Single Tone reference.

FIGURE 2 Ccb. C0b COLLECTOR-BASE CAPACITANCE

RGURE 1 Cfb INPUT CAPACITANCE versus VOLTAGE

versus VOLTAGE

^
1= 1 0 MHz

f = 1 OMH*
c

c )b

S io

__ c b

5
<_>

1.0

2.0

4.0

6.0

B.O

Vcb. COLLECTOR-BASE VOLTAGE (VOLTS)

Veb.EMITTER-BASE VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-765

MRF580A, MRF581A, MRFC581A

RGURE 3 GAIN-BANDWIDTH PRODUCT

RGURE 4 2ND AND 3RD ORDER INTERCEPT POINTS

versus COLLECTOR CURRENT

^6.0
S

3RD Order Intercept 4

4.0

4"
j* 2ND OrderIntercept

+1.0 dBComp
= 10 Vdc
i = 1.0 GHz

vce

2.0

/
20

100

120

140

+ 10

f2 = 501 MHz
Vce = w v

:+30 =

/
0

\\ = 495MHz

t = 75mA

'
+20

+30

lC. COLLECTOR CURRENT (mA)

+40

+50

+60

+70

Pjn,INPUT POWER IdBml

MRF580,A TYPICAL PERFORMANCE

RGURE 5 Gu max-MAXIMUM UNILATERAL GAIN,

FIGURE 6 GA max- MAXIMUM AVAILABLE GAIN

|S2il2versus FREQUENCY

versus FREQUENCY
r

\
\

6 U max k\

IS21I2

!2i!

-Gx-|s,2r- v'-

11 - |s,,12)11 -|s22| '1

vG Untax

<
0

..!?.
IS2lr

va E = i JV
"c = 75 tiA

vce = ">v
<c = 75 mA
0

0.1

0.2

0.3

0.5

0.7 1.0
2.0
f. FREQUENCY (GHz)

3.0

5.0 7.0

RGURE 7 NOISE RGURE AND GAIN ASSOCIATED

WITH NOISE RGURE versus FREQUENCY

0.5

0.3

0.7

1.0
f. FREQUENCY IGHzl

FIGURE 8 NOISE RGURE AND GAIN ASSOCIATED

WITH NOISE RGURE versus COLLECTOR CURRENT

N RF580,A

GNF

Gnf
3.0!

9.0
IS = 11 == 0

Zo =
rlRFI

6.0

5011

\ IRFSSOa

5.0

I IRF58C /\

3.0

Vce = 41)V

VCE = 10 V
IC-5OmA

1 = 5001m
1

0.2

0.3

0.5

0.7

1.0

lC. COLLECTOR CURRENT (mA)

f. FREQUENCY (GAz)

MOTOROLA RF DEVICE DATA

2-766

100

MRF580A, MRF581A, MRFC581A

RGURE 9 MRF580.A COMMON EMITTER S-PARAMETERS
INPUT/OUTPUT REFLECTION
COEFRCIENT versus FREQUENCY

jSO

vce

(Votts)

ImA)

(MHzl

5.0
25

100

10
25

100

15
25

100

FORWARD/REVERSE TRANSMISSION
COEFFICIENTS versus FREQUENCY

+90

S11

S21

S22

-4

2ll

_<*

|S12I

IS22I

Z.4

300
500

0.49

-170

5.97

0.24

-108

0.52

171

3.63

0.083
0.127

0.18

-117

1000

0.53

149

198

024

0.13

-154

1500

0.56

125

1.46

035

0.19

-172

300

0.48

-175

6.35

0.08

0.24

-126

500

0.51

0.13

0.18

-139

0.51
0.54

168
148

385

1000

2.10

0.25

0.16

123

1.56

0.36

0.20

169

300
500

0.48

-177

642

0.08

0.24

-132

0.51

-178

167

3 88

0.13

0.19

-145

1000

0.50

147

212

0.26

0.17

175

1500

0.53

123

1.57

0.36

0.21

164

300

0.48

-177

6.41

008

0.24

-134

500
1000

0.51

167

3.87

0.13

0.19

-148

0.26

68
65

1500

0.53

123

1.58

036

0.21

162

300

044

-164

6.67

0.07

0.25

-76

500

0.47

175

0.51

146

2.1

0.17

172

4.03

0.11

019

1000

0.48

152

0.21

0.12

-91

1500

0.52

126

156

032

0.15

-129

-75

300

0.47

-167

7.40

0.07

0.17

-89

500

0.47

174

4.53

0.11

-112

0.50

149

2.38

0.20

68
67

0.12

1000

0.13

-126

1500

0.53

131

1.71

0.31

0.11

-147

300

0.41

-171

7.24

007

0.20

SOO

171

4.39

0.12

0.13

-99

1000

0.45
0.45

150

2.36

0.23

0.07

-130

1500

0.48

125

1.72

0.33

0.12

-157

300

0.42

-172

7.22

0.07

0.45

170

4.38

0.12

0.19
0.14

-97

SOO
1000

0.45

149

2.35

0.23

0.07

1.71

0.33

0.11

-129
-158
-55

-96

-98

1500

0.49

125

300

0.48

-159

7.28

0.24

0.48

-179

4.44

93
80

0.06

500

0.09

0.17

-62

1000

0.51

153

2.33

0.18

0.19

-82

1500

0.54

133

1.67

0.27

0.17

-97

0.39
0.42

-165

7.49

0.07

0.23

-71

500

174

4.57

0.11

0.18

-67

1000

0.43

152

2.44

0.21

0.11

-74

1500

0.46

126

1.76

0.31

68
64

0.12

-115

300

0.39

-167

7.57

007

500

0.42

173

4.57

0.11

0.21
0.17

-69

300
50

lC = 50 mA

Pill

1500

Vce = 10 V

-74

1000

0.42

2.45

0.21

0.09

-75

1500

0.46

126

1.76

0.31

0.11

-118

300

0.39

-168

7.46

0.07

0.20

-72

151

500

0.43

172

0.11

0.17

0.43

151

4.53
2.41

tooo

0.21

0.10

-71

1500

0.47

126

1.74

0.31

0.12

-113

MOTOROLA RF DEVICE DATA

2-767

-66

so 1

jA
**\*
1 \
""
*

NOISE FIGURE (dB)

A \

rx .rL

RF58U

3> J>

o z

m O

I- o

0>
oz

grn

^
<

fit

/ ,y

\ \
\

/
Is

\ \ l\

2* A

y
\l
z\

\
\\

-1

. -

11 II

NF. NOISE FIGURE IdB)

GNF. GAIN ASSOCIATED WITH NOISE FIGURE IdB)

-*-

^MRF581_ 0_=

0) I
m '

az
o2
c
2
a m
1ni tj

Gnf. GAIN ASSOCIATED WITH NOISE FIGURE IdB)

_3J_i_

-^ II'

SS-!

^
"ii ii "

NF. NOISE FIGURE(dB)

-R

\MRF581A

-1
CO

GNE. GAIN ASSOCIATED WITH NOISE FIGURE IdB)

NF,NOISEFIGURE (dB)

55!

R ENT 100

\
\\
1V=
-d0c \\\

GNf,GAIN ASSOCIATED WITH NOISE RGURE IdB)

3 z

C a
9C
m a
< m

O 2

2j rn

55 2

. c

0
X

._*"'

~ en

II .

II W

GAIN (dB)

/
*ir

<j>

>
Z

a
m

3
0
c

v
m

H
<

0
>
z

Fl s
c

3 S

S 3

B
3 1

a
0
c

GAIN(dB)
o

zl
m

a
o

3 ro
o

01
00

H!
en
09
0

MRF580A, MRF581 A, MRFC581A

RGURE 16 MRF581.A COMMON EMITTER S-PARAMETERS
INPUT/OUTPUT REFLECTION
COEFRCIENT versus FREQUENCY

FORWARD/REVERSE TRANSMISSION

VCe = 10 V. IC = SO mA

COEFFICIENTS versus FREQUENCY

J50

vce
(Vortsl

>C
(mA)

5.0
25

100

18211

18l

!S22l

i-4

300

0.69

-169

6.57

0.34

176

3.95

0.29

-129
-142

1000
1500

0.72
0.73
0.76

0.06
0.07

500

93
82

157

2.10

0.12

0.27

-165

139

1.47

0.17

0.33

-172

300

0.70

-173

7.14

0.05

0.72

173

4.27

0.07

0.38
0.34

-144

500

2.24

0.72

0.13

0.76

138

1.61

0.18

0.37

173

300

0.70

-175

7.26

0.40

-148

500

100

157

0.33

0.72

172

4.33

0.05
0.07

0.37

-161

1000

0.72

013

0.30

176

0.76

155
138

2.28

1500

1.64

0.19

0.39

300

0.70
0.72

-176

7.30
4.34

0.40

-151

0.05
0.07

500

0.37

-163

1000

0.72

013

172

170

0.75

155
137

2.28

1500

1.64

0.19

0.39

168

300
500

0.66

-165

7.5B

005

0.29

-106

82
64

0.07

0.23

-116

0.11

0.19

-141

0.16

0.26

-153

0.69

178

4.56

0.70
0.74

159

1500

141

2.39
1.65

0.36

175

300

0.65

-169

8.25

0.05

-126

0.68

175

4.96

0.07

46
54

0.30

500

0.24

-138

1000

0.69

157

2.60

0.12

0.22

-164

1500

0.72

139

1.82

0.17

0.27

-171

300

0.66

-171

8.49

0.05

-132

500

0.68

5.06

007

1000

0.69
0.72

175
157

0.30
0.25

2.64

0.12

1.86

0.17

0.23
0.27

-170

139

-134

-177

0.66
0.68

3.46

5.06

0.05
0.07

174

.. -172

-145

-176

1000

0.68

157

2.64

0.12

0.30
0.25
0.23

1500

0.72

139

1.86

0.17

0.27

300
500

0.65

-163

7.96

0.05

0.28

0.67

179

4.82

0.06

0.21

-92
-98

1000
1500

0.68

160

2.51

0.11

0.17

-119

300
SOO
50

179

1000

SOO

-157

1500

300

S22

i-4

1500

100

Sl2

S21

ISul

1000

8 1

(MKt)

SO0

-147
-172

0.72

141

1.73

0.16

0.24

-137

0.64

-167

8.76

0.0

0.26

-112

0.66
0.67

177

5.37

0.20

-122

159

2.75

0.16

-148

0.71

141

1.91

0.06
0.11
0.16

1000
1500

0.22

-157

300

0.64

-168

005

0.25

-117

0.66

176

8.93
5.34

500

0.06

0.20

-128

1000

0.69

158

2.78

0.11

0.16

-154

1500

0.70

140

1.93

0.16

65
64

0.22

-162

300

0.64

-169

8.91

0.05

0.25

-117

500
1000

0.66
0.67

176

5.33

0.19

2.78

82
64

0.06

158

0.11

0.16

-129
-154

1500

0.70

140

1.93

0.16

0.21

-160

MOTOROLA RF DEVICE DATA

2-769

MRF580A, MRF581A, MRFC581A

FIGURE 17 MRF581 CONSTANT GAIN
CONTOURS NOISE FIGURE CONTOURS

MRFC581.A CHIP TOPOGRAPHY

,^^^
1^^

* ^^
HML

jP
[;|-|'] ' ,"
--

{.V.Jmmi
I, ,,.

...

Nominal Chip Size: 0.017" X 0.027" X 0.005"

Front Metallization: Gold
Back Metallization: Gold
Emitter/Base Bond Pad: 0.003" X 0.004"

IIMHil

IMS

500

0.91/176

IMS

GaMAX

IML

NFOPT

IdB)

(11)

078/77

0.3SV159'

105

^Emitter Fingers: 56
#Base Fingers: 57
Emitter Diffusion: Ion-Implanted Arsenic
Fabrication: Fully Ion Implanted
Ballasting: NiCr Resistor

OPT 150 1!)

2.0

2.5

Passivation: Silicon Nitride

Circuil Per Figure 18

FIGURE 18 MRF580,Ay581.A TEST FIXTURE SCHEMATIC

500 MHz

'"p"'^QH
CI,
C3.
C5.
C7.
C9

C2
C4
C6
C8

470 pF Chip (Ceramic)

0.018 pF Chip Capacitor
0.1 mF Mylar
1.0 pF. 25 Vdc Electrolytic
91 pF Mini-Unelco (C9 Taped 3.68 cm from

R1 2.7 kfl. V/i W

RFC1 0.15 ^H Molded Choke

TL1, TL2 Z0 - 26 fl, 0.0625 TFG as shown in

Photomaster

TL3. TL4 X 4 Microstrip. Zo - 100 !!

Y1, Y2 N-Type Connection (Female)

Collector Connection on TL4 as shown)

C10

Y3, Y4 BNC-Type Connector (Female)

35-45 pF Johanson Ceramic Capacitor, JMC

5801 or Equivalent(CIO Taped 3.12 cm from

Board Material 0.0625" Thick Glass Teflon er = 2.5

Base Connection on TL1)

MOTOROLA RF DEVICE DATA

2-770

MRF580A, MRF581A, MRFC581A

FIGURE 19 FUNCTIONAL CIRCUIT SCHEMATIC

VCC
V

DUT

RF Input > Q

1 [
Bias

Slug Tuner

1 ^

Bias
Tee

Slug Tuner

Tee

FIGURE 20 MRF580,A/581,A TEST CIRCUIT

FIGURE 21 PC BOARD PHOTOMASTER

NOTE: The Printed Circuit Board shown is 75% of the original.

MOTOROLA RF DEVICE DATA

2-771

< RF Output

MOTOROLA

SEMICONDUCTOR

MRF586

TECHNICAL DATA

MRF587

Designer's Data Sheet

The RF Line

NPN SILICON HIGH FREQUENCY TRANSISTORS

... designed for use in high-gain, low-noise, ultra-linear, tuned and

wideband amplifiers. Ideal for use in CATV. MATV. and instrumen

NF = 3.0 dB @0.5 GHz

tation applications

HIGH FREQUENCY

Low Noise Figure

NF = 3.0 dB (Typ) (a f = 500 MHz. \q = 90 mA

TRANSISTORS

High Power Gain

NPN SILICON

GU(max) = 16.5 dB (Typ) (a f = 500 MHz

Ion Implanted

All Gold Metal System

High fT 4.5 GHz MRF586

5.5 GHz MRF587

Low Intermodulation Distortion:

TB3 = -70dB
DIN = 125dBMV

Nichrome Emitter Ballast Resistors.

^MRFSST^-.

Case 7904

Case 244A-01

Style 1

MAXIMUM RATINGS
Ratings

MRF586

Symbol

Collector-Emitter Voltage
Collector Base Voltage

Emitter-Base Voltage

vEBO

Style 1
Values

Unit

VCEO

Vdc

vCBO

Vdc

2.5

Vdc

Collector Current Continuous

200

mAdc

Total Device Dissipation @ Trj = 50C

2.5

5.0

Watts

mW/C

Tstg

-65 to* 200

-65to*150

200

Deraie above Tq - 50C

Storage Temperature Range
Junction Temperature

MOTOROLA RF DEVICE DATA

2-772

MRF586, MRF587

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted)

Symbol

Characteristic

Typ

Max

Unft

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC = 5.0 mAdc. IB= 0)

V(BR)CE0

Collector-Base Breakdown Voltage

v(BR)CBO

v(BR)EB0

(lc =1.0 mAdc. IE=0)

Emitter-Base Breakdown Voltage

Vdc

dC=0. Ie30.1 mAdc)

Collector Cutoff Current

'CBO

(Vcb =10 Vdc. Ie = 0)

pAdc

ON CHARACTERISTICS

OC Current Gain (1)

nFE

200

(lc = 50 mAdc. Vce = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Current-Gain Bandwidth Product (2)

MRF586

(lC= 90 mAdc. Vce = 15 Vdc. f = 0.5 GHz)

MRF587

Collector-Base Capacitance

4 5

GHz

5.5

Ccb

2.2

<Vcb = iovdc. ie = o. f = i.o mhz)

FUNCTIONAL TESTS

Narrow Band Rgure 23

dC = 90 mA. Vcc = 15 V. f = 0.5 GHz)

Noise Figure

Power Gain at Optimum Noise Figure

MRF586

11.0

13.0

GNF

MRF587

4-9

Broad Band Figures 24 and 25

dC =90mA. Vcc = 15 V, f =03 GHz)

Noise Figure

MRF586

MRF587

Power Gain at Optimum Noise Figure

MRF586

110

TB3

(lc = 50 mA. VCc = 15 V pRef = 50 dBmV)

dC = 90 mA, Vcc = 15 V, PRef = 50 dBmV)

MRF586
MRF587

DIN 45004

dB
-

-65

-70

dBfiV

DIN

dC = 90 mA. Vcc = 15 V)
dc =90 mA. Vcc = 15 V)

MRF586
MRF587

Maximum Available Power Gain (3)

120

125
dB

Gumax

(lc = 90 mA. Vce = 15 Vdc, f = 0.5 GHz)

MRF586
MRF587

NOTES.

1. 300 (is pulse on Tektronix S76 or equivalent

2. Characterized on KP8S42 Automatic Network Analyzer.

, G

100

Gnf

MRF587

Triple Beat Distortion

5.5
6.3

'S21'2

Umax" (1-ISnl2K1-IS22l2)

MOTOROLA RF DEVICE DATA

2-773

14,5
16.5

MRF586, MRF587

FIGURE 1 TYPICAL NOISE FIGURE

FIGURE 2 -

AND ASSOCIATED GAIN versus FREQUENCY

NOISE FIGURE versus COUECTOR CURRENT

VCE = 16 V
ic = 90 m A

"MFR587"

.-.GlY*

v = 15 V

1 = 300 MHr

.77

MWSSfT""-

, y 12

GNF

"""MRraBb

90 g
MRF588

60 $

NF MRF587

100

I. FREQUENCY |GKi)

FIGURE 4 -

GAIN-BANDWIDTH PRODUCT versus

FIGURE 3 Gumax versus COLLECTOR CURRENT

COLLECTOR CURRENT

MRF587

MRFS87

1 = 500 MHz "

VCE = 15V,

Vce=15V__j

-*^-.

50
MRF586

VCE =

**-'*

1 = 300 MHz

150

lC. COLLECTOR CURRENT (mA)

19 V

vce = is v
-^^

MRF586

301- VCE = BU V
s

1.0

100

150

100

150

la COLLECTOR CURRENT (mA)

IC.COUECTOR CURRENT (mA)

MRF586 TYPICAL PERFORMANCE

FIGURE 5 -

FIGURE 6 -

BROADBAND NOISE FIGURE

JUNCTION CAPACITANCE versus VOLTAGE

MRFS86

MRFS86
10

70
_

Cob

1 = 30 IMHz

vcc = 15V

g 30
2
2

30
Circutper

Ccb

Figuiis 24

1.0

100

1.0

2.0

3.0

5.0

VCB. COUECTOR BASE VOLTAGE (V)

l&COUECTOR CURRENT (mA)

MOTOROLA RF DEVICE DATA

2-774

MRF586, MRF587

MRF586 TYPICAL PERFORMANCE (continued)

FIGURE 7 -

1.0 dB COMPRESSION POINT versus

COLLECTOR CURRENT

FIGURE 8 -

THIRD ORDER INTERCEPT POINT

MRFS86

MRF586

go
/

vcc = 15 V
1 = 20 )MHz

27 -

25 I

t7^

/^.SRDORDER

23 I | 40
11

Circuit per
Figut(24

POINT

*,
o

COMPRESSION
30

100

-44

-48

' fj = 205MHz"
f2 - 211MHz.
VCC = 15V

lC.COUECTOR CURRENT (mA|

FIGURE 9 -

CIRCUITPER
FIG.24

INTERCEPT POINT

' lC = 90mA
30

SECOND ORDER DISTORTION versus

FIGURE 10 TRIPLE BEAT DISTORTION versus

COLLECTOR CURRENT

MRFS86

MRF586

vet = 15V
PRe 1 = 50 dBImV

vc ;= 15V
PRiI = 50 dBmV@ 200 P1/IHi

-56

1-52

-60

Circuitper
Figure 24

Pin.INPUT POWER (dBm)

-56

-64

d
S

e27-60

Circu t per

Chu^^

Figun9 24

-68

"*-

-64

r"
80

-77

100

lC.COUECTOR CURRENT (mA)

FIGURE 11 -

lC COUECTOR CURRENT (mA|

35-CHANNEL X-MODULATIOIM DISTORTION

versus COLLECTOR CURRENT

FIGURE 12 -

DIN45004B versus COLLECTOR CURRENT

MRFB86

MRF686

1
vc ; = 15V
PR.f = SOdEImV

-20

5- 130

| 120

-30
CIII?

-40

-50

Circuit per

Ctrcmit per

110

Figure 24

3WRgurt

as 1

-B0

100

110

120

lC. COUECTOR CURRENT (mA)

IC. COUECTORCURRENT (mA)

MOTOROLA RF DEVICE DATA

2-775

100

MRF586, MRF587

FIGURE 13- MRF586 COMMON-EMITTER S-PARAMETERS

FORWARD/REVERSE TRANSMISSION
COEFFICIENTS versus FREQUENCY (GHz)

INPUT/OUTPUT REFLECTION

COEFFICIENT versus FREQUENCY (GHz)

Vce = 15V

vCe
(Volts)

S11

lc =SOmA

s22

Sl2

S21

(mA)

(MHz)

'Sill

IS2ll

IS12I

IS22I

042

1345
510
3.11
168

045

-74

84
71
47

005
009
016
028

039
041
042

-122
-175

109

60
56

030
0 32
038

-105

100
300
SOO
1000

100
300
500
1000

039
037
039
039

-131
180
158
127

14 35
5 27

106
83
72
49

005
Oil
017
0.29

56
62
62
55

041
0 28
032
036

-84
-130
-134

0 39
038
039
036

-134

14 45

176
1SS
120

5 27
3 19
1 70

106
82
70

005
011
016
0 28

100
300
SOO
1000

60
59
49

042
033
037
045

100
300

041

1440

111

551
335
179

85
72

1000

0 35
037
0 38

-112
-170
164
132

005
010
015
0 26

55
60
61
58

048
028
032
040

-63
-100
-109
-125

037
033
035
036

-119
-174
160
128

15 35
576
350
188

109
84

100
300
500
1000

73
49

005
010
016
0 27

58
62
62
57

043
026
031
037

-70
-103
-117
-130

100
300
SOO
1000

036
033
034

-123
180

031

118

15 68
578
344
1.84

107
83
70
43

005
010
015
0 25

59
51

044
032
039
0.49

042
033
035
037

-107
-167
166
133

1472

111

100
300
SOO
1000

564
348
1.82

85
73
47

005
009
014
025

55
60
61
59

049
028
0.32
040

-58
-92
-102
-119

100
300
500
1000

037
0.31
033
035

-112
-171

15 80
5 90

005
010

3 60

130

192

027

57
63
63
58

-100

162

109
85
73
49

045
0 26

037
031
032
033

-114

100
300
SOO
1000

1604
596
3 56
1.84

109
84
70
45

005
010
015
0 25

56
61
61
55

10
30

SOO

162

131

154

-173
155
120

3 22
175

015

MOTOROLA RF DEVICE DATA

2-776

030

038
045
030
035
044

-125
-138

-144

-87
-132
-136

-143

-77
-117

-122
-133

-64
-108
-124
-67
-108
-114

-127

MRF586, MRF587

MRF587 TYPICAL PERFORMANCE

FIGURE 14 BROADBAND NOISE FIGURE

FIGURE 1B -

JUNCTION CAPACITANCE versus VOLTAGE

MRF587

MRF587
10

6.0

VCC = 15V

5.0

1 = 30 )MHz

3
C9

Cob

4.0

Circuitper
z

-Ccb-

Figun9 25
3.0

100

FIGURE 16 -

Vcb-COLLECTOR BASE VOLTAGE (V)

IC.COLLECTOR CURRENT (mA)

I.OdB COMPRESSION POINT versus
FIGURE 17 -

COLLECTOR CURRENT
MRFS87

THIRD ORDER INTERCEPT POINT

MRF587

29
4

"25 IS sI 5
23 S
a

vcc = 15 V

Circu tper
FigunI 25

17
16

3
Q?

3
tS

100

110

40
+ 10 AY

Camp. Pt

30
20

3rd Order

' Intercept

2'1 *
'9 I I

1 = 20 IMHz

'f-

120

Circuitper
Figure 25

12 = 211 MHz
Vcc = 15 V

1
40

Pin. INPUT POWER(dBm)

IC COUECTOR CURRENT (mA)

MOTOROLA RF DEVICE DATA

2-777

MRF586, MRF587

MRF587 TYPICAL PERFORMANCE (continued)

FIGURE 18 SECOND ORDER DISTORTION versus

RGURE 19 TRIPLE BEAT DISTORTION versus

COLLECTOR CURRENT

COLLECTOR CURRENT
MRF587

MRF687
-60

-48

VCE = 15 V
PR*| = 50ffBmV

vcc = 15 V

-52

Pfe f = 50 dBmV@ 200 AAHz

Circuit per
Figure 25

g -56

" y*

Circuit per
Figure 25

3-68

Ten per Figure 26

1 72

-60

5
-76

1 j

-80

100

110

120

lC COUECTOR CURRENT (mA)

100

110

120

lC.COLLECTOR CURRENT (mA)

FIGURE 2 0 - 3S-CHANNELX-MODULATION DISTORTION

FIGURE 21 -

versus COUECTOR CURRENT

DIN 45004B versus COLLECTOR CURRENT

MRFS87

MRFS87
140

X
vra: = isv
Pft ( = 50dEImV

-20

S" 130

1 "

-30

-CH13.
-40

Crcui per

Circuit per

Figure 25

f
-50

?er Figure

-fin

100

110

120

lC COUECTOR CURRENT (mA)

lC,COUECTOR CURRENT (mA)

MOTOROLA RF DEVICE DATA

2-778

1
100

110

120

MRF586, MRF587
FIGURE 22 -

MRF587 COMMON-EMITTER S-PARAMETERS

FORWARD/REVERSE TRANSMISSION
COEFFICIENTS versus FREQUENCY (GHz)

INPUT/OUTPUT REFLECTION

COEFFICIENT versus FREQUENCY (GHz)

j50

VCE

(Volts)

ImA)

Freq
(MHz)

Vce = 18 V

IC =90mA

S2i

Sll

Si2
14

IS12I

IS22I

-131
-159
-178
170
162
156

16 45
942
500
361
2 92
255

113

004

049

-91

98
86
76
67
58

006

45
49
55
56
55
54

038
035
038
041

-116
-132
-138

044

-152

-141

17 89
10 OS
5 31
382
309
267

110

004

97
85
76
67
58

005
009
012
015
018

50
55
60
59
57
55

047
0 39
038
040
044
047

-102
-126

18 26
1020
538
3.86
312
270

109
96
85
76
67
58

004
005
009
012
015
019

52
57
62
60
58
55

047
039
039
041
045
048

-106
-130
-144

18 36
1063

115
100
87
78
68
59

004
005
008
010
013
015

48
51
57
58
57
55

050
0 36
033
035
039
042

112

003
005
008
Oil
014
016

51
57
61
60
59
57

0.46

-85

035
033
036
040
044

-107
-123
-129
-136
-144

98
86
78
68
60

003
005
008
011
014
017

S3
59
63
62
59
57

033
036

20.34
11.51
612
4.19
329
2.76

118
101
87
75
68
61

004
005
009
012
016
020

54
56
63
62
61
56

0 51
036
032
032
038
0.47

-122
-150
-166
-17S
177
168

2214

115

003

99
86
75
68
62

005
009
013
016
020

56
60
63
61
55

045
033
0.30
032
036
046

-60

12 24

-127

22.76
12 44
655
4.47
3.51
295

114

003
005
009
013
017
020

58
62
66
64
61
55

043
032
029
0 32
038
046

-62
-89
-85
-102
-100
-98

100
200
400
600
800
1000

056
058
0.60
064
067
0.70

100
200
400
600
800
1000

053
056
059
063
066
069

-164
178
169
161
155

052

-145

100
200
400
600
800
1000

0S6
059
063
066
069

-166
177
168
161
1SS

100
200
400
600
800
1000

0S3
053
0 55
0.59
062
0 65
049
0 51
053
0 58
0 60
063

-132
-158
-178
171
164
187

2019
11 54

100
200
400
600
800
1000

612
443
358
312

99
87
78
68
60

048
0 50
053
057
060
063

-135
-160
-179
171
164
157

20.82

111

100
200
400
600
800
1000

11.77
6.22
4.50
364
318

049
052
048
052
053
0 53

-112

100
200
400
600
800
1000

045
049

100
200
400
600
800
1000

045
050
051
051

100
200
400
600
800
1000

044
048
044
050
0.51
051

S22

is21i

Sll"

-122
-153

175
173
165
158

-145

-164
-174
177
168

-162
-167
-176
176
168

571

416
337
295

645
4.42
347

291

98
85
75
69
62

008
011
014
017

MOTOROLA RF DEVICE DATA

2-779

045
034

041
044

-144

-141

-146
-153
-160

-149

-155
-162
-75

-96
-112
-119

-127
-136

-88
-111

-126
-131
-139
-147

-62
-77
-74
-90
-90
-90

-86
-83
-99
-98
-96

MRF586, MRF587

FIGURE 23 -

MRF588/587 NARROW BAND TEST FIXTURE SCHEMATIC

600 MHz

TIT

C8 7^C6
-p* "-0/T^.

C5"?"F"CC7

>t*\ *3/*rN.

TL4

TL3

J-f

~ ^^jn
i C4
I 368 cm g
;;c9
TL2

Input

^DiK

W=b
_i 3 12cm'I

cio^p
C1.C2
C3. C4
C5. C6
C7. C8
C9

_J_

470 pF Chip (Ceramic)

0.018 jiF Chip Capacitor
01 pF Mylar
10 pF, 25 Vdc Electrolytic
91 pF Mini-Unelco (C9 Taped 3.68 cm from
Collector Connection on TL4 as shown)
35-45 pF Johanson Cerami Capacitor. JMC
5801 or Equivalent (CIO Taped 3.12 cm from
Base Connection on TL1)

FIGURE 24 -

RI 2.7 kn. 1VJW

RFC 1 0.15 pH Molded Choke

TL1. TL2 Zq = 26 It. 00625 TFG as shown in

Photomaster

TL3. TL4 A/4 Microstrip. Zq = 100 tl

Y1. Y2 N-Type Connection (Female)
Y3. Y4 BNC-Type Connector (Female)

Board Material 00625" Thick Glass Teflon tr = 2.5

MRF686 BROADBAND TEST CIRCUIT SCHEMATIC

9 VBB

O vcc
C4

Vcc = 15 V
Pg= 10dB
f= 10-375 MHz

Zo =75n

it
C5

C1.C4
C2, C5
C3
C6

0.01 iF Feedthru
0.001 pF
0.5-10pF
12pF

L1 1 Turn W

I.D. #20 AWG

R1 -13nV4W

Tl (1)12 Turns Tappedat 4 Tums #30 AWG

T2<1) 10 Turns Tappedat 2 Turns#30 AWG
(1) Ferronics 12-340-k Core

MOTOROLA RF DEVICE DATA

2-780

Output

MRF586, MRF587

FIGURE 25 MRFS87 BROADBAND TEST CIRCUIT SCHEMATIC

O VBb

9 VCC

VCC=15V
Pg = 11 dB
f - 5-375 MHz

Zo=75n

Output
C3

-\(r

7* c7

Input

R1 12 n 1.0 W (2-24 n on each emitter port)

JTCTl.

-J=-

R2 1.8 k VbW
C2

-r ^*ci

FIGURE 26 -

R3 2.2 k'AW
LI 1 Turn 0.012 dia #22 AWG

C1. C7
C2. C6
C3
C4. C5
C8

i i

0.5-1 OpF
0.001 pF
0.01 pF
0.01 pF Feedthru
12pF

TlOl 5 TurnsTapped at 2 Tums. #30 AWG

T2<D 8 TurnsTappedat 3 Turns. #30 AWG
(1) Ferroxcube 135 CT050
3D3 Material

FIGURE 27 -

SECOND ORDER DISTORTION TEST

TRIPLE BEAT DISTORTION TEST

Oisto lion

~K-V fi
FIGURE 28 -

1f2 fl -T

CROSSMODULATION DISTORTION TEST

Distortion

PRef

FIGURE 29 -

DIN 45004B INTERMODULATION TEST

Unmodulated

Carrier

-6.0 dB

:
100%

Modulation

199 MHz I

15 kHz

-6 )dB
211 MHz

193 MHz

~A~T

MOTOROLA RF DEVICE DATA

2-781

"A-205 MHz

r
1* 1

1217 MHz

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF604

The RF Line
LOW-175 MHz

NPN SILICON RF POWER TRANSISTOR

RF POWER
TRANSISTOR

. . . designed for 12.5 Volt VHF large-signal amplifier applications

in industrial equipment with restricted available space.

NPN SILICON

Specified 12.5 Volt, 175 MHz Characteristics Output Power = 1.0 Watt
Minimum Gain = 10 dB

Efficiency = 50%

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

2.0

Vdc

2.0

Watts

11.0

mW/C

Tsia

-65 to +200

Rating

Total Device Dissipation @ Tq = 25C

Derate above 25C

Storage Temperature Range

jsk

^F \ .

tarns
nxm

^O
\*

*-N

STYLE 1:

FIGURE 1 175 MHz TEST CIRCUIT SCHEMATIC

A
B

Ml
4.52

495

C
D
E
F
6

1.65
0*06

its
0533

&*-

MUWETBB
MAX
5*

RF >-f=>

IM83
2.54 BSC
0914
1.17

0.711
12.70

135

N
P

MCHES
MN
MAX
9303
Pfl?
0173
0195
0035
0065
0*16
Qi

102

0305

FW1. EUTTTER

\Xt
_

IS* BSC
U7BSC
1 117

OW
0CU
M'
0.100 BSC
0036
00*6
0078

CASE 26-03
TO-208AB

C1. C2.C3.C4 3.0-30 pF

CS tOOOpF
C8 0.01 .F
LI 2 Turns, #16 AWG. 3/16" 1.0.. 1/4* Long
L2 0.t5 pH. MOLDED CHOKE
L3 4 Turn*. #18 AWG. 3V8-ID.. ITT Long

(TO-46)

HI 100 0.1/4 W. 10%

MOTOROLA RF DEVICE DATA

2-782

00(3

0.500
OJ50
45* esc
0.050 BSC

I OJKO

MRF604
ELECTRICAL CHARACTERISTICS (Tc = 25C unlessotherwisenoted.!

Characteristic

Symbol

Min

V(BR|CE0

V(BR)CB0

V(BR)EB0

3.5

Typ

Max |

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

| Uc" 5.0 mAdc, lB-0)

Collector-Base Breakdown Voltage

Vdc

(IC=100nAdc, lE-0)
Emitter-Base Breakdown Voltage

Vdc

(lE= 100jiAdc, lc-0

Collector Cutoff Current

'CEO

1.0

mAdc

(VCe= 12 Vdc, Ib-01,

ON CHARACTERISTICS
DC Current Gain

hpE

800

200

UC = 50 mAdc Vr,E - 5.0 Vdcl

DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product

MHz

(IC" 50 mAdc, VCe = 10 Vdc, f - 200 MHz)

3.5

Cob

Output Capacitance

(VCB= 12.5Vdc. Ie - 0, f - 1.0 MHz)

FUNCTIONAL TESTS (Figure 1)
10

Gpe

Common-Emitter Amplifier Power Gain

(Vcc" 12.5Vdc, Pout= 1.0W,f = 175MHz)

Collector Efficiency

(Vcc " '2-5 Vdc, Pout= 10 W, f 175 MHz)

Zin

Series Equivalent Input Impedance

7.5-j 14

Ohms

47-j 60

Ohms

(Vcc * 12.5Vdc, P0ut " 10 w- 175 MHz>

Series Equivalent Output Impedance

zout

(Vcc" 12.5Vdc, P0ut = 1-0W,f- 175MHz)

FIGURE 2 - OUTPUT POWER versus INPUT POWER

FIGURE 3 - CURRENT-GAIN BANDWIDTH PRODUCT

1.6
1.4

1
Vcc-12.5 Vdc

1.2

175 MHz

1.0

0.8
0.6
0.4

0.2
tl

100

HGURE 4 OUTPUT CAPACITANCE versus COLLECTOR BASE VOLTAGE

8.0
7.0

6.0

UJ
u

5.0

3.0

2.0

IC.COLLECTOR CURRENT (mA)

Pin. INPUTPOWERImW)

1.0
0

4.0

6.0

8.0

vcb. collector base voltage ivoltsi

MOTOROLA RF DEVICE DATA

2-783

100

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF607

The RF Line
1.75 W-175 MHz

NPN SILICON RF POWER TRANSISTOR

RF POWER
TRANSISTOR
NPN SILICON

...designed for amplifier, frequency multiplier, or oscillator ap

plications in military, mobile, marine and citizens band equipment.
Suitable for use as output driver or pre-driver stages in VHF and
UHF equipment.

Specified 12.5 Volt, 175 MHz Characteristics Output Power = 1.75 Watts
Minimum Gain - 11.5 dB

Efficiency = 50%
Characterized through 225 MHz

- -i m

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

VEBO

3.5

Vdc

Collector Current - Continuous

0.33

Adc

Total Device Dissipation @Tc 75C (1).

3.5

Watts

mW/C

Tstg

65 to +200

Derate above 75C

Storage Temperature Range

_JL

Lir-::n=g

"5TT
1

STVUI:

PIN).EMITTER

-fl., pi

LfloUECTOR l+Umim4i|T|A|H|

(1) This device is designed for RF operation. The total device dissipation rating applies
only when the device is operated as a Class B or C RF amplifier.
NOTES:
1. DIMENSIONING AND TOIRANCNG PERANSI
Y14.SM. 1982.
2. CONTROLLINGDIMENSION:INCH.
3. DIMENSIONJ MEASUREDFROMDIMENSIONA
MAXIMUM.

RGURE 1 175 MHz TEST CIRCUIT SCHEMATIC

4 DIMENSIONB SHALL NOT VARY MORE THAN ft

(0.0101IN ZONE R. THISZONE CONTROLLED FOR
AUT0MATK HANDLING.
5. DIMENSIONF APPLIESBETYWENDIMENSIONP
AN0 L DIMENSION0 APPLIESBETWEEN
DIMENSIONI AND K MINIMUM.LEADDIAMETER
IS UNCONTROLLED IN DIMENSIONP AND
BEYONDDIMENSIONK MINIMUM.

MUMETERS
DIM
A

B
C

P
f
F

Q
CI 2.7-1S pF, ARCO 461
C2 9.0-180 pF. ARCO 463
C3. C4 5.0-80 pF. ARCO 462
CS1000 pF UNELCO
OS 5.0 pf. 25 Vdc. TANTALUM

LI 1 Turn #20 AWC, 3/3* 10

L2 3 Tumi #20 AWG. 3/8" ID

13 0.22 pH Molded Choko

U 0.15 nH Molded Choke
with FERROXCUBE
58-590-65-33 Bead on

ground lead

MOTOROLA RF DEVICE DATA

2-784

H
J

CASE 79-04
TO-205AD

(TO-3S)

n
i
M
P
R

MM
asi
7.75
6.10
0.41
023
0.41

MAX

M?
8.50
660
053
m
048

S.WBSC
0.86
072
1.14
074
12.70
M
63$
45* BSC
U7
2LS4

NCHES
MM
MAX
O370
0335
0305
O2G0
O240
0016
0021
0.041
0009
mots
0019
0100 BSC
O034
aoe
0029
0.500
0.750
0250
4PBSC
0050
am
0335

MRF607
ELECTRICAL CHARACTERISTICS <TC 25C unlessotherwise noted.)
Symbol

Characteristic

Min

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(6R)CEO

V(BR)CES

V(BR)EBO

Vdc

(lc =2SmAdc. IB-0)

Collector-Emitter Breakdown Voltage

Vdc

(lc 25 mAdc. VBE - 0)

Emitter-Base Breakdown Voltage

Vdc

E - 0.5 mAdc, lc - 0>

Collector Cutoff Current

'CEO

0.3

mAdc

(VC - 10 Vdc. IB - 0)
ON CHARACTERISTICS

DC Current Gain

150

{lC = 50 mAdc. Vce = 6.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

<Vcb = 12 Vdc,lE"0,f- 1.0 MHz)

FUNCTIONAL TEST (Figure 11

GpE

Common-Emitter Amplifier Power Gain

11.5

(Pout" 17S wVCC" |2.5 Vdc, f - 175 MHz)

Collector Efficiency

(Pout" t75 w' VCC 12-5Vdc'' " 175 MHz)

TYPICAL PERFORMANCE DATA

FIGURE 2 -

FIGURE 3 - OUTPUT POWER versus INPUT POWER

OUTPUT POWER versus FREQUENCY

3.25

250 mW
3.0

J.0

200 m
2.75
100
2.50

2.0

SS 2.75

nw\

17 iMHi

1 2.50

ZSMHt

5 225

| 2.0

50mw\

I 1.75

; - 12.5 Vdc -

1.50

vcc -12.51rfdc
1.0
0.75

075

125

150

175

200

225

250

275

150

300

200

250

300

350

400

450

500

Pin.INPUTPOWER(mW)

f. FREQUENCY(MHi)

FIGURE S - SERIES EQUIVALENT IMPEDANCE

PARAMETERS

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

2.75

2.50
275

1.75

ie 1.50
t;
tn
o

fir

175 IHi
150 nW

1.00

cf 0.75
0.50
0 75
5.

8.0

9.0

Vcc,SUPPLY V0LTAGE (VOLTS)

Zol* ~ Conjugate oftheoptimum load impedance into which thedevice output

operates at a givenoutputpower, voltage andfrequency.

MOTOROLA RF DEVICE DATA

2-785

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF627

The RF Line

0.5 W - 470 MHz

HIGH FREQUENCY
TRANSISTOR
NPN SILICON

NPN SILICON HIGH FREQUENCY TRANSISTOR

. . . designed for 12.5 Volt UHF large-signal amplifier applications in

industrial and commercial FM equipment operating in the 407 to
512 MHz range. Ideally suited for requirements that specify opti
mum performance in a limited space.

Specified 12.5 Volt, 470 MHz Characteristics Output Power = 0.5 Watts
Minimum Gain = 10 dB

Efficiency = 60%

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

3.5

Collector-Current - Continuous

150

Total DeviceDissipation Tq = 25uC

2.5

Watts

mW/C

-65 to +150

Derate Above 25C

Storage Temperature Range

Tstg

STYLE 1.
PIN 1. EMITTER
2. BASE
1 EMITTER
4. COLLECTOR

Vdc

mAdc

MILLIMETERS

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

RflJC

28.5

C/W

DM
A

MM
503

c
D

2.41

1.02
0.64

F
J

K
M

1.40

INCHES

MAX

559
3.33
165

0.200

0220
0130

0.89
0.18

0.03
11.05
45'NOM
_

0.095
0.055

CASE 305A-01

MOTOROLA RF DEVICE DATA

2-786

0065

0.040
0.050
0025
0.035
0007
0003
0.435
45 NOM
_

MRF627

ELECTRICAL CHARACTERISTICS (Tc - 25C unlessotherwise noted)

Characteristic

Typ

Max

Symbol

Min

V(BRCEO

V(BR)CBO

v(BR)EB0

3.5

Unit

OFF CHARACTERISTICS

I Collector-Emitter Breakdown Voltage

Vdc

(lc = 5.0 mAdc, lB = 0)

Collector-Base Breakdown Voltage

Vdc

OC - 0.1 mAdc, lE"0)

Emitter-Base Breakdown Voltage

Vdc

(lE - 0.1 mAdc, lc - 0)

Collector Cutoff Current

'CEO

1.0

mAdc

1.0

mAdc

(VCe " 12 Vdc, Ib " 01

Emitter Cutoff Current

*EBO

(VBe * 35 Vdc, lc - 01
ON CHARACTERISTICS
OC Current Gain

hFE

150

dc 50 mAdc, Vce " 10 Vdc)

DYNAMIC CHARACTERISTICS
CurrenttGain-Bandwidth Product

GHz

(lC 50 mAdc, Vce - 12.5 Vdc, f - 200 MHz)

(lC - 100 mAdc, VCE= 12.5Vdc, f 200 MHz)
(lc 150 mAdc, Vce - 12.5 Vdc, f =200 MHz)
Output Capacitance

2.5
2.7

2.6

Cob

3.5

3.0

(VCB - 12.5 Vdc, lE =0, f - 1.0 MHz)

Input Capacitance

Cib

8.8

(vBe - t.o vdc, ic = o, f 1.0 mhz)

FUNCTIONAL TESTS

GpE

Common-Emitter Amplifier Power Gain

(VCc " 12-5 Vdc' pout " 05 W, f -470 MHz)

Collector Efficiency

(VCc " 125 Vdc, Pout - 0.5 W, f - 470 MHz)

Series Equivalent Input Impedance

Zin

6.0J4.0

Ohms

(VCC* 12-5Vdc, Pout =0.5 W, f =470 MHz)

Series Equivalent Output Impedance

Ohms

45-J28

zout

(VCc " *2.5 Vdc. Pout 0.5 W, f - 470 MHz)

FIGURE 2 - OUTPUT CAPACITANCE versus

COLLECTOR BASE VOLTAGE

FIGURE 1 - OUTPUT POWER versus INPUT POWER

1600

1400

470 MHz

VCI -12.5 Vdc

400

4.0

Pin,INPUTPOWER(mW)

6.0

8.0

Vcb. COLLECTOR-BASE VOLTAGE (VOLTS)

MOTOROLA RF DEVICE DATA

2-787

MRF627

FIGURE 3 470 MHz TEST CIRCUIT SCHEMATIC

50 U

B1 Ferroxcube Bead 56-590-65-3B

TL1 Micro Strip 0.26" x 2.9"

C1, C2, C8, C10 Johanson Trimmer, JMC #5501

TL2 Micro Strip 0.055" x 3.9"

2 oz. Cu. CLAD

C3 100 pF Unelco 350 Vdc J101

C4 15 pF Unelco
C5, C6 680 pF Allen Bradley, Feed-Thru

TL3 Micro Strip 0.26" x 2.9"

TL4 Micro Strip 0.50" x 1.2"
TL5 Micro Strip 0.055" x 2.9"

<r = 2.55

C7 0.1 pF Monolithic
C9 1 pF Tantalum Sprague 10% 35 Vdc

LI #18 AWG Wire 0.750" Long

L2 2 Turns #18 AWG ID 0.2"

C11 30 ;iF Electrolytic 25 Vdc

L3 VK200 20/4B

FIGURE 4 -

470 MHz TEST CIRCUIT LAYOUT

NOTE: The Printed Circuit Board shown is 75% of the original.

MOTOROLA RF DEVICE DATA

2-788

Board 0.062" Glass Teflon

MRF627

FIGURE5 - TYPICAL Sn and S22 versusFREQUENCY

FIGURE7 - TYPICALS21 versus FREQUENCY

FIGURE 6 - TYPICAL S12 versus FREQUENCY

130

20 10 0

350 340 330

140o150t6Oo 170180 190" 200 210 220

320"

130

230

MOTOROLA RF DEVICE DATA

2-789

350 340

330

140" 160ot60Ol70o1B013(Jo200o"210o 220

320

230

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF630

The RF Line
3.0 W

470 MHz

RF POWER
TRANSISTOR
NPN SILICON

NPN SIUCON RF POWER TRANSISTOR

... designed for 12.5 Volt UHF large-signal, amplifier applications

in industrial and commercial FMequipment operating to 512 MHz.
Specified 12.5 Volt, 470 MHz Characteristics
Output Power = 3.0 Watts
Minimum Gain = 9.5 dB

Efficiency = 55%

Characterized with Series Equivalent Large-Signal Impedance

Parameters

Grounded Emitter TO-205AD (TO-39) Type Package for High

Gain and Excellent Heat Dissipation
Replaces Medium-Power Stud Mounted Devices
Gold Metallized, Emitter Ballasted for Long Life and Resistance
to Metal Migration

STYLE 5:

PIN 1 COUECTOR
2 **&

3.EMITTER

Symbol

Value

Unit
Vdc

Collector-Emitter Voltage

VCEO

Collector-Base Voltage

VCES

Vdc

Emitter-Base Voltage

Vebo

4.0

Vdc

Collector Current Continuous

1.0

Adc

Total Device Dissipation <g> Tc = 2SC

8.75

Watts

mW/C

Tstg

-65 to +200

Derate Above 25C

Storage Temperature Range

DIM
A
B
C
0

Characteristic

Y14.5M. 1982.
2. CONTROLLING DIMENSION:INCH.
3. DIMENSIONJ MEASUREDFROMOCMENSION A
MAXIMUM.
4. DIMENSION B SHALL NOT VARY MORE THAN 025
10.010)IN ZONER. THISZONECONTROLLED FOR
AUTOMATICHANDLING.
5 DIMENSION FAPPUES BETWEEN OtMENSIONP
AND L OtMENStON0 APPLIESBETWEEN
DIMENSION L AND K MINIMUM. LEAD OAKETER
IS UNCONTROLLEDIN DIMENSION P AND
BEYOND DIMENSION K MINIMUM.

THERMAL CHARACTERISTICS

Thermal Resistance, Junction to Case

r-i

NOTES:
1. DIMENSIONINGAND T0LERANCING PER ANSI

MAXIMUM RATINGS

Rating

,[|. n
ii

|+| 40.3610.014) | T| A| H|

Symbol

Max

Unit

C/W

E
F
G
H
J

CASE 79-05
TO-205AD

(TO-39)

X
L
M
P
R

MOTOROLA RF DEVICE DATA

2-790

MUMETERS
MM
MAX
929
9.02

WC HES
MH

MAX

0.355

0.356

8X1

B50

0315

0335

4.20
044

4.57

0*3

0.185
0.017
0.017

O.tBO
0.021

0.530

0.750

044

063
0.4$
0.41
508 BSC

0.72 1 0.86
0.74
12.70

1.01
19.0S

6.35 1 45'BSC

1.27

2.54 1 -

0035
0.016
0.019
0200 BSC
0X34
0X28
0029
0.040
0250

4PBSC
0.050
0.100

MRF630

ELECTRICAL CHARACTERISTICS (Tc= 25C unless otherwise noted)

Characteristic

Symbol

Min

v(BR)CE0

V(BR)CES

V(BR)EB0

4.0

Typ

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC= 50 mAdc. Is = 0)
Collector-Emitter Breakdown Vc'tage

(lC= 50 mAdc.Vbe = l
Emitter-Base Breakdown Voltage

(lg = 1.0 mAdc. lc = 0)

'CES

Collector Cutoff Current

1.0

mAdc

(VCe= '2 5 Vdc- VBE = 0, TC = 25C)

ON CHARACTERISTICS
20

hFE

DC Current Gain

(lc = 100 mAdc. Vce = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Cob

Output Capacitance

(Vcb = 12.5 Vdc. l = 0. f = 1.0 MHz)

FUNCTIONAL TEST
10.8

GpE

Common-Emitter Amplifier Power Gain (Fig. 1)

(VCc= 12.5 Vdc.Pout = 3.0 W. f = 470 MHz)

Collector Efficiency (Fig. 1)

(VCc= 12.5 Vdc. Pout = 3.0 W. f = 470 MHz)

FIGURE 1 -

470 MHz TEST CIRCUIT SCHEMATIC

iC9^p
lCWTk
l
C8?k

<*
12.5 Vdc

Output
CI

RF Input > Q )}f

CI, C7 1.5 - 20 pF Johanson

C2. C6 1 - 10 pF Johanson
C3. C4 27 pF Mini-Unelco
C8 250 pF Unelco

L1, L2 Copper Strap, 1" Length 0.225 Width x 0.005" Thickness

C9 0.047 pF Erie Disc Cap 10 V

C10 1.0 jiF Electrolytic

R1 ion. 1/4 W

L3 0.33 pH Molded Choke

L4 0.12 pH Molded Choke
L5 1.2 pH Molded Choke

MOTOROLA RF DEVICE DATA

2-791

MRF630

FIGURE 3 -

FIGURE 2 OUTPUT POWER versus INPUT POWER

OUTPUT POWER versus FREQUENCY

5.0
470 1

GURE

Pjn= 400 mW
I

4.0

= 300 mW

512 MHi-

fc 3.0

3.0

2.0

2.0
CC =

rcc= 12.5 Vd

2.5 Vi

1.0

0.2

0.1

450

0.3

FIGURE 4 -

475

I. FREQUENCY (MHj|

Pin. INPUT POWER (W)

FIGURE 8 -

POWER OUT versus SUPPLY VOLTAGE

SERIES EQUIVALENT IMPEDANCE

5.0

GURE

4.0

3.0

2.0
300 mW

Pin =

1 = 470 M 1t

6.0

7.0

8.0

9.0

Zqi' = Conjugate oftheoptimum load impedance into which thedevice output

operatesat a givenoutputpower, voltage andfrequency.

VCC. SUPPLY VOLTAGE (VOLTS)

FIGURE 6 -

OUTPUT POWER versus FREQUENCY.

BROADBAND CIRCUIT

5.0

1
I

g 4.0
-

1
J n = 400mW.

3.0

Pin =
2.0

300 mW

1 r1

-pin = 200 m iv\!^L

J .J

E5
425

450

475

500

f. FREQUENCY (MHz)

MOTOROLA RF DEVICE DATA

2-792

MRF630

FIGURE 7 -

MRF630 BROADBAND CIRCUIT

420-520 MHz

< M2J5 Vdc

RFC2C S Rl Y Bead

Output

Input > r^J )f

RFC1 - 0 47 pH Molded Choke

CI. C5 43 pF Mini-Unelco

C2
C3
C4
C6
C7

RFC2 1 0 pH Molded Choke

10 pF Mini-Unelco
18 pF Mini-Unelco
27 pF Mini-Unelco
6.8 pF Mini-Unelco
220 pF Ceramic Chip

RFC3 - 0.3 ^H Molded Choke

R1 -

12 11/1/4 W

TL1 -

Transmission Line 0.166" 1.85" (WXL)

TL2 -Transmission Line 0.166" * 1.77" (WXL)

Board Material 2 oz 0.0625" TFG

C8 0.1 mF
C9 1.0 mF Tantalum

FIGURE 8 -

RFC1

BROADBAND CIRCUIT

MOTOROLA RF DEVICE DATA

2-793

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF641

The RF Line
15 W- 470 MHz

CONTROLLED Q
RF POWER

NPN SILICON RF POWER TRANSISTOR

TRANSISTOR

NPN SILICON

. ..designed for 12.5 Volt UHF large-signal amplifier applications

in industrial and commercial FM equipment operating to 512 MHz.

Specified 12.5 Volt, 470 MHz Characteristics Output Power = 15 Watts

Minimum Gain 7.8 dB

Efficiency = 55%

Characterized with Series Equivalent Large-Signal Impedance

Built-in Matching Network for Broadband Operation

Tested for Load Mismatch Stress at all Phase Angles with

20:1 VSWR @ 16-Volt High Line and Overdrive.

Parameters

tIT

STYLE!:

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

Rating

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

Collector Current Continuous

3.0

Adc

Total Device Dissipation @ Tc = 25*C

43.7
0.25

Watts
W/"C

Tsta

-65 to +150

Derate above 25C

Storage Temperature Range

NOTE:
FUNK IS ISOLATED INALLSTYLES

MUMETBIS
KN
MAX
2514
2*33
1245
12.95
5.97
762
5J3
S5S
2.16
104
5.08
5.33
1829
lii*

J
K

0.10

0.15

10.29

11.17

OOI
A
B

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case

PIN1. EMITTER
2. COLLECTOR
1 EMITTER
4.BASE

RflUC

4.0

E
F

INCHES
MIN

0960
0.490
0.235
0210

2-794

0270

0.065

0.120

0.200

0-210

0.720
0004

0.7M
0006

0.449

381

406

0.405
0.150

N
a
R

181
2.92

4J1

0150

130

0.115

0.170
0130

105

3-3Q

11.94

1257

0120
0.470

0.130
0495

CASE 316-01

MOTOROLA RF DEVICE DATA

MAX

0990
0510
0-300

0.160

MRF641

ELECTRICAL CHARACTERISTICS (Tc - 25Cunless otherwise noted.I

Typ

Symbol

Characteristic

Unit

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V|BR|CE0

Vdc

V(BR)CES

Vdc

V(BR)EBO

Vdc

IIC- 20 mAdc. Ip. " 0)

Collector-Emitter Breakdown Voltage

(lc 20 mAdc. Vbe 01

Emitter-Base Breakdown Voltage

(lc: 5.0mAdc. Ic = 0>

(vCe i5 vdc. vBe

5.0

'CES

Collector Cutoli Current

mAdc

0. Tc * 25C)

ON CHARACTERISTICS
150

hFE

DC Current Gain

(lc - 1.0 Adc,Vce " 6.0 Vdc)

DYNAMIC CHARACTERISTICS

cob

(Output Capacitance

(VCB " 12.5Vdc. Ie =0.1 - 10 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

Gpe

7.8

8.5

(Vcc " 12-5Vdc- pout 15W, f - 470 MHz!

Collector Efficiency

(Vcc " 12-5Vo*c- pout " 15 W,f =470 MHz)

Output Mismatch Stress

(VCC " '6 Vdc, Pjn - 3.0W, f - 470MHz, VSWR - 20:1,

No Degradation in Output Power

All Phase Angles)

FIGURE 1 - TEST CIRCUIT SCHEMATIC

C10
o o

PARTS

Z1 - 1.225" X 0.187" Microstrip

Z2 - 0.884" X 0.187" Microstrip

23 - Capacitor Block (Base)

Z4 Collector Block

Z5 - 1.1" X 0.187" Microstrip

Z6 - 0.433" X 0.187" Microstrip
Z7 - 0.4" X 0.187" Microstrip
Dotted Area Capacitor Assembly

CI, C2 0.8-10 pF Johanson

C3, C4 - 24 pF Chip Caps 100 mils ATC
C5, C6 - 22 pF Chip Caps 100 mils ATC
C12 - 220 pF Chip Cap 100 mils ATC
C7, C11 1.0 pF Tantalum 35 Vdc
C9, C10 680 pF Feedthrpugh Allon-Bradley
C13 - 200 pF UNELCO
C8 - 0.1 /iF, 60 V Erio Hed Cap
RFC1 - VK 200 - 104B Ferrita Choke
LI - 4 Tums 0.2" Die. #16 AWG
L2 - 9 Tums 0.16" Die. #16 AWG
Boad - Ferroxcube 56-590-66-35EB

MOTOROLA RF DEVICE DATA

2-795

VCC 12.5 V
O

NOTES

CS, C6. aro mounted as close to the capacitor

assombly as posslblo.

$$C3, C4 aremounted in the capacitorassembly.

Board - 62.5 mil Glass Teflon, <p - 2.55.

MRF641

FIGURE 2 - POWER OUTPUT versus POWER INPUT

FIGURE 3 - POWER OUTPUT versus FREQUENCY

30
27

-vcc" 12.5

O
CE

Pin-3.0W

WC ; 12.5 Vdc

V-

170 MH

= 2.0W

1?
-LOW

o
0.

9.0

a." 6.0

0.S

1.0

1.S

2.0

2.5

3.0

3.5

4.0

4.5

5.0

380

400

420

440
4S0
480
f. FREQUENCY (MHt)

Pin.POWER INPUT (WATTS)

FIGURE 4 - POWER OUTPUT versus SUPPLY VOLTAGE

500

520

540

FIGURE S - POWER SATURATION PROFILE

Pin-2.0W

8.0

9.0

Vcc. 12.5 V

Vcc, SUPPLY VOLTAGE (VOLTS)

2.0

2.5

3.0

3.5

Pin. POWER INPUT (WATTS)

FIGURE 6 - SERIES EQUIVALENT INPUT-OUTPUT IMPEDANCE

Zql* * Conjuatts ofthslotdiraptdmct into which tht dtvict output optrtttiit s givsn powtr, q,tnd frequency.

MOTOROLA RF DEVICE DATA

2-796

4.0

4.5

5.0

MRF641

NOTE: The Printed Circuit Board shown is 75% of the original.

MOTOROLA RF DEVICE DATA

2-797

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF644

The RF Line
25 W - 470 MHz

CONTROLLED Q
RF POWER

NPN SILICON RF POWER TRANSISTOR

TRANSISTOR
NPN SILICON

. . . designed for 12.5 Volt UHF large-signal amplifier applications in

industrial and commercial FM equipment operating to 512 MHz.

Specified 12.5 Volt, 470 MHz Characteristics Output Power = 25 Watts

Minimum Gain - 6.2 dB

Efficiency = 60%
Characterized with Series Equivalent Large-Signal Impedance
Parameters

Built-in Matching Network for Broadband Operation

Tested for Load Mismatch Stress at all Phase Angles with

20:1 VSWR @ 16-Volt High Line and 50% Overdrive.

tIT

STYU1:
PIN1. EMITTER
2. COLLECTOR
3. EMITTER
4. BASE

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

Vebo

4.0

Vdc

Collector Current Continuous

4.0

Adc

Total Device Dissipation @ Tc = 26*C

103
0.59

Watts
wrc

-65 to +150

Rating

Derate above 25C

Storage Temperature Range

Tstfl

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case

NOTE:
FLANGE IS ISOLATED W ALl STYLES.

DM
A
B

1.7

c/w

25.14

MCKES
MAX

MN
0.960

0.490

*?
H?
W

0235

O300

OJIO
0.095

0220

2-798

0.510

5.33
its
S-C6
1123
aio

533
1854
ais

1029

11.17

L
N
a
R

0.150

0.160

381

431
130

0150
0115
0120

1134

130
1257

0.170
01
01

0470

F
H

232

0120

020?

0210

0720
OOW
0405

p.7J3
o-ops

CASE 316-01

MOTOROLA RF DEVICE DATA

0.990

1295

P
E

RftIC

ma ETERS
MAX

KM
2438
1245

0.440

MRF644

Min

Symbol

Characteristic

Typ

Unit

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR|CE0

V(BR|CES

V(BR)EB0

4.0

Vdc

(IC = 20 mAdc. Ir = 01
[Collector-Emitter Breakdown Voltage

Vdc

(lc 20 mAdc. VBE - 0)

[Emitter-Base Breakdown Voltage

Vdc

(lE-5.0 mAdc. lc = 0)
1Collector Cutoff Current

'CES

5.0

mAdc

(VCE =15Vdc. VBE =0.Tc- 25C)

ON CHARACTERISTICS
OC Current Gain

(lc =4.0Adc.VCE;

"FE
5.0 Vdc)

DYNAMIC CHARACTERISTICS

(VCB= 12.5 Vdc. IE =0,(

C00

[Output Capacitance
1.0 MHz)

FUNCTIONAL TESTS

Gpe

Common-Emitter Amplifier Power Gain

6.2

7.0

(VCc 12.5 Vdc, Pou, =25W, lc (MAX) =3.6Adc,f 470MHz)

Input Power

6.0

Watts

(VCc = 12-5Vdc. pout = 25 W, f - 470 MHz)

Collector Efficiency

(Vcc =12-5 Vdc, Pout =25W, lc (MAX) - 3.6Adc, f 470MHz)

Output Mismatch Stress

No Degradation in Output Power

(VCc * 16 Vdc, Pin= Note 1, f - 470 MHz, VSWR - 20:1,

All Phase Angles)
Series Equivalent Input Impedance

Zin

1.2+J3.3

Ohms

(VCc * 12-5Vdc, Pout" 25 W, f " 470 MHz)

Series Equivalent Output Impedance

ZOL

Ohms

1.9 + J2.1

(VCc = I2-5Vdc' pout " 25W, f 470 MHz)

Notes:

1. Pfn= 150%of Drive Requirement for 25 W Output at 12.5 Vdc.

4 - Mismatch stress factor-the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch
stress test is accomplished in the standard test fixture (Figure 1) terminated in a 20:1 minimum loadmismatchat all phaseangles.
FIGURE 1 - TEST CIRCUIT SCHEMATIC
RFC1

C1.C2.C7.C8

1-20 pF JOHANSON Variable)

CI2, CI3 680 pF Foedthrough

27 pF 100 mil ATC

24, ZS

6" #22 AWG 0.100" ID

0.20" x 0.20" Microstrip

1/2" #18 AWG bent In

"V" thepe 1/8" Wide

30 pF 100 mil ATC

5" #20 AWG 0.187" IO

CS, C6

33 pF 100 mil ATC

RFC1

Ferroxcube VK200-20-4B

0.20" x 020" Microstrip

250 PF 100 mil ATC

Ferroxcube Bead 56-690-6B-3B

0.70" x 0.20" Microstrip

C10

100 PF UNELCO

0.25" x 0.20" Microstrip

C11.C14

1 UF 35 V TANTALUM

1.63" x 0.20" Microstrip

0.50" X 020" Microstrip

Board

62.6 mil Glass Teflon, eR - 2.6S

MOTOROLA RF DEVICE DATA

2-799

0.33" x 020" Microstrip

MRF644
FIGURE 2 - POWER OUTPUT versus POWER INPUT

FIGURE 3 - POWER OUTPUT versus FREQUENCY

("470 MHi
V

;C 13.6

vyy,

;.ow

Pin"

s; 30

12.5 V

20
S

Vcc

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

460

Pln.POWEH INPUT (WATTS)

FIGURE 4 - POWER OUTPUT versus SUPPLY VOLTAGE

2.5 V

480
I. FREQUENCY (MHz)

FIGURE 5 - POWER SATURATION PROFILE

f 470 MH

l47 IMHz

Pin.6.(

VV^

Vcc U.6 V^-

of 20

"^ 12.5 V

4.0

6.0

8.0

1.0

2.0

3.0

VCc.SUPPLY VOLTAGE (VOLTS)

4.0

5.0

6.0

Pin,POWER INPUT WATTS)

FIGURE 7 - SERIES EQUIVALENT INPUT-OUTPUT IMPEDANCE

ttmwk ** jOSC^x >-. ^XK^

FREQUENCY

So-

450

470

85j

MHz

512

Zin

zol*

(OHMS)

1.21 +J3.47 1.7S + jl.96

UI + J3.25 1.90 + J2.14
1.06 + J2.09 1.S6 J2.34

Zql' = Conjugate ofIheoptimum load impedance intowhich thedevice output

operatesat a givenoutputpower, voltage andfrequency.

MOTOROLA RF DEVICE DATA

2-800

7.0

8.C

9.0

MRF644

FIGURE 8 MRF644 TEST FIXTURE

NOTE: The Printed Circuit Board shown is 75% of the original.

FIGURE 9 PRINTED CIRCUIT BOARD

MOTOROLA RF DEVICE DATA

2-801

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF646

The RF Line
45 W - 470 MHz

CONTROLLED Q

NPN SILICON RF POWER TRANSISTOR

RF POWER
TRANSISTOR

NPN SILICON

. . . designed for 12.5VoltUHF large-signal amplifier applications in

industrial andcommercial FM equipment operating to 512MHz.
Specified 12.5 Volt, 470 MHz Characteristics Output Power = 45 Watts
Minimum Gain = 4.8 dB

Efficiency = 55%

Characterized withSeries Equivalent Large-Signal Impedance

Parameters

Built-inMatching Networkfor Broadband Operation

Tested for Load Mismatch Stress at all Phase Angles with

20:1 VSWR @16-Volt High Lineand 50%Overdrive.

STYLE 1:

PIN 1.EMITTER
2. COLLECTOR
3. EMITTER
4. BASE

MAXIMUM RATINGS

Rating

Symbol

Value

Collector-Emitter Voltage

Vceo

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

Unit

Vebo

4.0

Vdc

Collector Current Continuous

9.0

Adc

Total Device Dissipation @ Tq = 25C

117

Watts
W/"C

Derate above 25*C

Storage Temperature Range

0.67

K0TE:

FIANCE IS ISOLATED INALLSTYLES

DIM
A

Tsta

-65 to +150

c
D

THERMAL CHARACTERISTICS

E
F
H
J
K

I
N

0
R
U

KUWETERS
MM
MAX

MAX

25.14

0960

0990

1235
7.62

0490

0510

0235

0300
0.220

2*33
1245
557
5J3
216

mc HIS

558

0210

3.04

0085

0.120
0J10
0730

508

533

0200

1929
oto
10.29
381
381
292

18.54

0720
0004

11.17
40S

305

11.94

015

0440
0160

330

MM
0.130

12.57

0.470

0.495

4J1
3J0

CASE 316-01

MOTOROLA RF DEVICE DATA

2-802

0006

0405
0150
0150
0.115
0.120

0.170

MRF646

ELECTRICAL CHARACTERISTICS ITC 25C unless otherwise noted.)

| Symbol
.
Characteristic

Unit

Typ

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage

Vdc

V(BR)CE0

V(BR|CES

V(BR)EB0

4.0

{lC 20 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage

Vdc

(lc - 20 mAdc, VBg =0)

Emitter-Base Breakdown Voltage

Vdc

UE "5.0 mAdc, lc=0)

>CES

Collector Cutoff Current

mAdc

(VCE - 15Vdc,VBE =0,TC- 25C)

ON CHARACTERISTICS

n
a

hFE

OC Current Gain

|lc =4.0 Adc. Vce 50 Vdc>

DYNAMIC CHARACTERISTICS
Output Capacitance

Cob

(Vcb ** 12.5 Vdc, Ie0.< 10MHz>

FUNCTIONAL TESTS

Gpe

Common-Emitter Amplifier Power Gain

5.4

4.8

dB
-

(Vcc " 12.5Vdc, Pout 45 W,lc(Max) =5.8 Adc, f =470 MHzl

Input Power

Watts

<VCC =12.5 Vdc. P0ut " 46W. f - 470 MHz)

Collector Efficiency

(VccD 12.5Vdc,P00t"45W, lc(Max)- 5.8Adc.f =470MHzl

Load Mismatch Stress

No Degradation in Output Power

(VCc " !6 Vdc, Pin - Note 1, f - 470 MHz, VSWR - 20:1,

All Phase Angles)
Series Equivalent Input Impedance

Zin

1.4 + 14.0

Ohms

(Vcc 12-5Vdc, Pout - 45 W, - 470 MHz)

Series Equivalent Output Impedance

1.2 + 12.8

zol

Ohms

(Vcc " 12-5Vdc, Pout - 45 W, f - 470 MHz)

Notes:

1. Pjn = 150%of Orive Requirement for 45 W output @ 12.5 V.

4 - Mismatch stress foetor-theelectrical criterion established to verify the device resistance to load mismatch failure. The mismatch
stresstest is accomplished in the standardtest fixture (Figure 1) terminated Ina 20:1 minimum loadmismatch at all phaseangles.

FIGURE 1 - TEST CIRCUIT SCHEMATIC

RFC1

fCO

OO t O
icioTc" c12f^137L+
12.5 VCC

ij-

C1.C8

1.0-20 pF JOHANSON

C3, C6

100 PF UNELCO
33 PF 100 mil ATC

30 pF 100 mil ATC

5" # 20 AWG. 0.1" I.D.

Forroxcuba VR200-20-4B
0.525" x 0.190" Microstrip
1.475" x 0.190" Microstrip

39 PF 100 mil ATC

Z3, Z4

(0.2 x 0.21/0.25 Alumina

1-10pFJOHANSON
100 pF 100 mil ATC

0.190" x 0.190" Microstrip

1.150" x 0.190" Microstrip
0.660" x 0.190" Microstrip
62.5 mil Glass Toflon.

RFC1

C10, CI3 1 MF 35 V TANTALUM

C11.C12 680 pF Feadthrough
B

Ferroxcubo Bond 56-590-65-3B

Z7
Board

22 AWG, 0.1" I.D.

MOTOROLA RF DEVICE DATA

2-803

cR - 2.55, A.- 0.0018

MRF646

FIGURE 2 - POWER OUTPUT versus POWER INPUT

FIGURE 3 - POWER OUTPUT versus FREQUENCY

Pout Pin

Pout Frsqutncy

470 ft Hz

12.5 V
60

Pin-l5W

13.6 V^,
SO

Pin-13 W
4(1

*12.5\1

Pin-t0W
30
20
10
0

1.0

480
, FREQUENCY (MHz)

Pjn. POWERINPUT(WATTS)

FIGURE 4 - POWER OUTPUT versus SUPPLY VOLTAGE

FIGURE 5-- POWER SATURATION PROFILE

Pout-Pi jP n

P0utvCC

13.6 V

470 (Hz

470 Hz
40

Pin =15

^"~12.5 V

or
3

Pin-13 W

8.0

VCc.SUPPLY VOLTAGE (VOLTS)

Pin.POWEH INPUT (WATTS)

FIGURE 7 - SERIES EQUIVALENT

INPUT-OUTPUT IMPEDANCE

Zql* = Conjugate oftheoptimum load impedance intowhich thedevice output

operatesat a givenoutputpower, voltage andfrequency.

MOTOROLA RF DEVICE DATA

2-804

MRF646

FIGURE 8 MRF644 TEST FIXTURE

NOTE: The Printed Circuit Board shown is 75% of the original.

FIGURE 9 PRINTED CIRCUIT BOARD

MOTOROLA RF DEVICE DATA

2-805

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF648

The RF Line
60 W - 470 MHz

CONTROLLED Q

NPN SILICON RF POWER TRANSISTOR

RF POWER
TRANSISTOR
NPN SILICON

. . . designed for 12.5 Volt UHF large-signal amplifier applications in

industrial and commercial FM equipment operating to 512 MHz.

Specified 12.5 Volt. 470 MHz Characteristics Output Power - 60 Watts

Minimum Gain = 4.4 dB

Efficiency = 55%

Characterized with Series Equivalent LargeSignal Impedance

Parameters

Built-in Matching Network for Broadband Operation

Tested for Load Mismatch Stress at all Phase Angleswith

20:1 VSWR @ 16-Volt High Line and 20% Overdrive

'-HT

STYLE 1:
PIN1. EMITTER
2. COLLECTOR
3 EMITTER
4 BASE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

Vcbo

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

Collector Current Continuous

11.0

Adc

Total Device Dissipation @ Tc = 25C

175
1.0

Watts
W/*C

DM
A
B

-65 to +150

C
0
E
F

Derate above 25C

Storage Temperature Range

Tstn

THERMAL CHARACTERISTICS

NOTE:
FLANGE IS ISOLATED INALLSTYLES
nous

MUMETBS
UN
MAX

MAX

2433

25 U

0960

0990

1245
557

1295

0490
0235

533

752
558

0510
0300

2.16
508

104
533

0085

1829
010

1854

0720
0004

1029

11.17

381

Ml
292

406
4.31

0
R

IDS

1194

015

133
130
1257

0210
0.200

0.405
0.150

2-806

0210
0730
0036
0440

0160

0150

0170

0115
0170

0130
0130

0470

0495

CASE 316-01

MOTOROLA RF DEVICE DATA

0220
0120

MRF648

ELECTRICALCHARACTERISTICS (Tc =25C unless otherwise noted!

Symbol

Characteristic

Typ

Max

OFF CHARACTERISTICS

1Collector-Emitter Breakdown Voltage

V(BR|CEO

V(BR)CES

Vdc
-

UC-50mAdc.lB-0)
Collector-Emitter Breakdown Voltage

Vdc

0c-50mAdc.VBE"0)

V(BR)EBO

Emitter-Base Breakdown Voltage

Vdc

4.0

(lE S.OmAdc. Ic - 0)
'CES

Collector Cutoff Current

mAdc

150

,VCE " ,5 Vdc> VBE * - TC=25C>

ON CHARACTERISTICS
DC Current Gain

(lc - 6.0 Adc. Vce " 6.0 Vdc)

DYNAMICCHARACTERISTICS
130

1Output Capacitance

(VCb* 12.5Vdc.IE 0. f = 1.0 MHzl

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

5.0

4.4

(Vcc " 12-5Vdcpout " 60 W. f - 470 MHzl

Input Power

(Vcc - 12.5Vdc. Pou,- 60 W. f =470 MHzl

Collector Efficiency

Watts

(Vcc 12.5Vdc. POU|-60W. f =470 MHzl

Output Mismatch Stress

No Degradation in Output Power

(VCc " 16 Vdc- Pin " 26 W. f =470 MHz. VSWR = 20:1.

All Phase Angles)

\p = Mismatch stressfactor-the electrical criterionestablished to verify the device resistance to loadmismatch failure. The mismatch
stress test is accomplished in the standard test fixture (Figure 1) terminated in a 20:1 minimum load mismatch at all phase angles.

FIGURE 1 - TEST CIRCUIT SCHEMATIC

RFC!

Q-<

>-e

1.39" X 0.190" Microstrip

C1.C2.C8. C10

1 - 20 pF Johanson

200 pF Unelco

C4. C5

33 pF lOOmil ATC

06. C7

36 pF 100m,I ATC

10 Turn* =20 AWG 0.1" I.D. X 0.80"

0.330" X 0.190" Microstrip

tOOpF lOOmil ATC

Ferroxcube VR200 19 4B

Board

62.5mil Glass Teflon. fR - 2.SS.

C11. C14

1.0 uF 35 V Tantalu

0 46" X 0.190" Microstrip

1.30" X 0.190" Mieroitrip

10 Turni =26 AWG 0 1" I.D. X 0.23"

A, 0.0018. Dimension:
5.0" X 3 0" X 0.06"

MOTOROLA RF DEVICE DATA

2-807

MRF648

FIGURE 2 - POWER OUTPUT versus

FIGURE 3 - POWER OUTPUT versus

POWER INPUT

FREQUENCY
30

1 470 MHi

vcc

vrjt -

___

12.5 V

70
ft.

22W

-^^libV
bU

3S0

400

420

Pln.POWER INPUT (WATTS)

FIGURE 4 -

440

460

4S0

POWER OUTPUT versus

SUPPLY VOLTAGE

FIGURE 5 - POWER SATURATION PROFILE

110

1-470 MHi

1 = 4 OMHl

vcc70

""""~ 19W
50

3.6 V

y^iiav

SOO

1. FREQUENCY (MH;|

Vcc. SUPPLY VOLTAGE (VOLTS)

P,n.POWER INPUT (WATTS)

FIGURE 6 - SERIES EQUIVALENT

INPUT-OUTPUT IMPEDANCE

Zol' - Conjugate oftheoptimum load impedance into which thedevice output

operates at a givenoutputpower, voltage andfrequency.

MOTOROLA RF DEVICE DATA

2-808

S20

540

MRF648

TEST CIRCUIT TEST FIXTURE

NOTE: Tho Printed Circuit Board shown is 75% of the original.

MOTOROLA RF DEVICE DATA

2-809

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF650

The RF Line

NPN Silicon

RF Power Transistor
50 WATTS, 512 MHz

... designed for 12.5 Volt UHF large-signal amplifier applications in industrial and
commercial FM equipment operating to 520 MHz.

RF POWER TRANSISTOR
NPN SILICON

Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics

Output Power = 50 Watts
Minimum Gain = 5.2 dB (a 440, 470 MHz
Efficiency = 55% (u 440, 470 MHz
IRL = 10 dB

Characterized with Series Equivalent Large-Signal Impedance Parameters from 400 to

520 MHz

Built-in Matching Network for Broadband Operation

Triple Ion Implanted for More Consistent Characteristics
Implanted Emitter Ballast Resistors

Silicon Nitride Passivated

100% Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR (
15.5 Vdc, 2.0 dB Overdrive
MAXIMUM RATINGS
Rating

Symbol

Value

Collector-Emitter Voltage

VCEO

16.5

Vdc

Collector-Emitter Voltage

VCES

Vdc

Emitter-Base Voltage

Unit

vEBO

4.0

Vdc

Collector-Current Continuous

Adc

Total Device Dissipation Cu Tq = 25C

135

Watts

0.77

VWC

Tstg

-65 to +150

Symbol

Max

Unit

Rwc

1.3

C/W

Derate above 25C

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (Tc = 25X unless otherwise noted.)

Symbol

Min

Collector-Emitter Breakdown Voltage

dC = 50 mAdc, Ir = 0)

V(BR)CEO

16.5

Collector-Emitter Breakdown Voltage

V(BR)CES

V(BR)EBO

4.0

Characteristic

Typ.

Max

Unit

OFF CHARACTERISTICS

Vdc

(lC = 50 mAdc, VBe = >

Emitter-Base Breakdown Voltage

Vdc

(Ie = 10 mAdc, lc =.'0|

Collector Cutoff Current

ices

5.0

mAdc

(VCE = 15 Vdc, Vbe = 0, Tc = 25C)

ON CHARACTERISTICS
DC Current Gain

hFE

120

dC = 5.0 Adc, Vce = 5.0 Vdc)

(continued)

MOTOROLA RF DEVICE DATA

2-810

MRF650

ELECTRICAL CHARACTERISTICS continued (Tc = 25C unless otherwise noted.)

Symbol

Characteristic

Min

Typ

Max

Unit

135

170

DYNAMIC CHARACTERISTICS

C0b

Output Capacitance

(Vcb = 12.5 vdc, Ie

0, f = 1.0 MHz)

FUNCTIONAL TESTS (In Motorola Test Fixture. See Figure 1.)

Common-Emitter Amplifier Power Gain

Gpe

5.2

6.1

Gpe

5.0

5.9

IRL

(Vcc = 12-5Vdc, P0ut = 50 W, f = 440, 470 MHz)

Common-Emitter Amplifier Power Gain

(Vcc = 12-5Vdc, P0ut = 50 W, f = 512 MHz)

Input Return Loss

(Vcc = 12-5Vdc, P0ut = 50 W, f = 440, 470, 512 MHz)

Collector Efficiency

(Vcc = 12-5Vdc, Pout = 50 W, f = 440, 470 MHz)

Collector Efficiency

(VCC = 12-5Vdc, Pout = 50 W, f = 512 MHz)

4(2)

Output Mismatch Stress

No Degradation in Output Power

(Vcc = 15-5V, 2 dB Overdrive, f = 470 MHz, VSWR = 20:1)

(all phase angles) (1)

ID Pjn - 2.0 dB above drive requirement for SO W output at 12.5Vdc.

(2) 4 = Mismatch stress factor the electrical criterion established to verify the device resistance to losd mismatch failuro. The mismatch stress test
is accomplished in the standard test fixture (Figure 1)terminated in a 20:1 minimum load mismatch at all phase angles.

SOCKET

TL1

TL3

TL4

TL5S TL6 '

D.U.T.

/->-

RF INPUT]

I TL7STL8

TL9

TL10 C16

DO-CDtCZH

SOI
TL2

i ci4 y

C11

C15/

TLV2^

OUTPUT

501)

TL11

TL1. TL12 Zo = 50 Ohm

B1. B8 Ferrite Bead Ferroxcube VK200 20-4B

B2. 63. B4, B5. B6. B7 Ferrite Bead Ferroxcube #56-590-38

TL2 See Photomaster

TL3 See Photomaster
TL4 See Photomaster

CI, C8 10 pF. 25 V. 25%, Electrolytic. ECS TE-1204

C2, C7 1000 pF, Chip Cap, 5%. ATC 1008102JC50
C3, C6 91 pF, 5%. Mica. SAHA 3HS0006-91
C4. C5. C12. C13 36 pF. 5%, SAHA 3HS0006-36
C9. C16 220 pF. Chip Cap. 5%. ATC 100B221JC200
C10. C11. C15 0.8-10 pF. Variable. Johanson JMC501 PG26J200
C14 1.0-20 pF. Variable. Johanson JMC5501 PG26J200

TL5 See Photomaster

TL6 See Photomaster
TL7 See Photomaster

TL8 See Photomaster

TL9 See Photomaster
TL10 See Photomaster

LI. L2 3 Turns. 18 AWG. 0.19' ID Total Length 3.5"

TL11 See Photomaster

N1. N2 N Coaxial Conn., Omni-Spectra 3052-1648-10

Transmission Line Boards: 1/16" Glass-Teflon

Keene GX-0600-55-22
2 oz. Cu Clad Both Sides

R1. R2 10 Ohm. 10%. 1.0 W. Carbon. RCA 831010

t, -- 2.55
Bias Boards: 1/16" G10 or Equivalent
2 02. Cu Clad Double Sided

Figure 1. 440 to 512 MHz Broadband Test Circuit

MOTOROLA RF DEVICE DATA

2-811

MRF650

w
1

711

1 = 400 MHi

p. i

470

rf- - -

17 W

fin

520

15
13

40
10

vcc
0

vcc =

= 12.5 Vdc

400

420

Piri. INPUT POWER IWATTS)

440

460

480

Po =
va -

15
13

50W
12. ivoc

nn"

520

Figure3. Output Power versus Frequency

Pin = 17W
^

500

I, FREQUENCY (MHzl

Rgure 2. Output Power versus Input Power

12.5 Vdc

J> 30

ic-

**
X-

2
2.0:1
f = 512 H Hi

VSWR
* ^ -

1.5:1
--

1.0:1

440

Vcc. SUPPLY VOLTAGE IVOLTS)

500

520

I. FREQUENCY (MH:)

Rgure 4. Output Power versus Supply Voltage

Figure 5. Broadband Performance for P0 = 50 W

P0 = SOW. Vcc = 1*5Vdc

TUNED FOR MAXIMUM

GAIN ATP0 = 50W

! <

j (MHz)

I 400

| 440
470

512
520

Zin
it

0.7 +
0.7 +
08 +
0.8 +
0.7 +

zo<Ii

J2.8
J3.2
J3.3
J3.2
J3.0

1.4
1.1 *
0.8 +
0.7 +
0.6 +

j2.3
J2.6
J2.7
J2.9
J3.0

Zqi.* = Conjugate ofoptimum load

impedance into which the

device operatesat a given

Figure 6. Input and Output Impedance Normalized to 10 Ohms

Circuit Tuned for Maximum Gain (a P = 50 W

MOTOROLA RF DEVICE DATA

2-812

output power, voltage and

frequency.

MRF650

COLLECTORBIAS BOARD

Vre BIAS BOARD

SCALE 1:1
RF INPUT BOARO

RF OUTPUT BOARD

Figure 7. Photomaster for Broadband Test Circuit

Figure 8. 440-512 MHz Broadband Test Circuit

MOTOROLA RF DEVICE DATA

2-813

MRF650

Rl, R2.R3,R4

CTX B2 JJC11

-f-C13

TL13 C12TL14

TL1

TL2

i>-G-C=H

B1, B2 Ferrite Bead Fair Rite Products Corp.

B3 Ferrite Bead Fair Rite Products Corp.

Rl. R2, R3, R4 39 Ohm 1/8 W 5% Rohm

TL1-

C2.C11 820 pF, 5%

C3, CIO 91 pF, 5%, Mica, SAHA 3HS0006-91
C1, C12 220 pF, 5%, Murata Erie
C4 9.1 pF, 5%, Murata Erie
C5, C6. C7, C8 43 pF. 5%, Mica SAHA 3HS0006-43
C9 10 pF, 5%, Murata Erie
C13 10 uF, Electrolytic, 50 V, Panasonic

TL2TL3-

Z0 = 50 Ohm
Z0 " 50 Ohm
Z0 = 50 Ohm

TL4- See Photomaster

TL5-

Zq = 50 Ohm

TL6- See Photomaster

TL7- See Photomaster

TL8- See Photomaster
TL9- See Photomaster

LI 7 Turns, 24 AWG, ID Dia. 0.116*

L2 5 Tums, 18 AWG, ID Dia. 0.165"

TL10-

- Z0 = 50 Ohm

TL11- - See Photomaster

TL12-

N1, N2 SMA Flange Mount, Omni-Spectra 2052-1618-02

TL13-

TL14-

- Z0 = 50 Ohm
- Z0 = 50 Ohm
- Z0 = 50 Ohm

Board Material: 1/16", G10, <r = 4.5

2 oz. Cu Clad Both Sides

Figure 9. Schematic of Broadband Demonstration Amplifier (3)

PERFORMANCE CHARACTERISTICS OF
BROADBAND DEMONSTRATION AMPLIFIER

1
15 W
= 12. 5V

Pin =

50
40

20
10

4
/'/
//

y**

"CC

470
*>

<f
f

6050 165
2.0:1

VSWR
VSWR

Pin, INPUT POWER (WATTS)

430

440

450

Vcc = ' " vt

460

7ZZ n=

470

480

490

500

510

520

I. FREQUENCY (MHt)

Figure 10. Output Power versus Input Power

Rgure 11. P0, qc and VSWR versus Frequency

(3) Detailed design and performance information available from Motorola upon request.

MOTOROLA RF DEVICE DATA

2-814

'5:1 I

530

MRF650

SCALE 1:1

Figure 13. Photomaster For 440-512 MHz Broadband

Figure 12. 440-512 MHz Broadband

Demonstration Amplifier

MOTOROLA RF DEVICE DATA

2-815

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA
The RF Line

MRF652
MRF652S

NPN Silicon
RF Power Transistors
... designed for 12.5 Vdc UHF large-signal, amplifier applications in industrial and com
mercial FM equipment operating to 512 MHz.

SW 512 MHz
RF POWER
TRANSISTORS
NPN SIUCON

Guaranteed 12.5 Volt, 512 MHz Characteristics

Output Power = 5 Watts

Minimum Gain = 10 dB

Efficiency = 65% (Typ)

Typical Performance at 870 MHz, 12.5 V, 5 W Output = 6 dB
Series Equivalent Large-Signal Characterization
Gold Metallized, Emitter Ballasted for Long Life and Reliability
Capable of 30:1 VSWR Load Mismatch at 15.5 V Supply Voltage

CASE 244-04
MRF652

CASE 249-05
MRF6S2S

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

VEBO

Vdc

Rating

Collector Current Continuous

Adc

Total Device Dissipation @ Tq = 25C

Watts

143

mW/C

Tstg

-65 to +150

200

Symbol

Max

Rwc

Derate Above 25C

Storage Temperature Range

Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

MOTOROLA RF DEVICE DATA

2-816

Unit
c/w

MRF652

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted)

Characteristic

Typ

Max

Unit

Symbol

Min

V(BR)CEO

V(BR)CES

Vdc

v(BR)CBO

Vdc

V(BR)EBO

4.0

Vdc

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

l\C=25mAdc. IB= 0)
Collector-Emitter Breakdown Voltage

(lC= 25 mAdc. Vbe = 0)

Collector-Base Breakdown Voltage

(lc = 25 mAdc. IE= 0)

Emitter-Base Breakdown Voltage
(IE = 5.0 mAdc. lc = 0)

>CES

Collector Cutoff Current

1.0

mAdc

(vCe =15 vdc, vBE = 0)

ON CHARACTERISTICS
DC Current Gain

"FE

150

dC = 200 mAdc. VcE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

C0b

Output Capacitance

9.5

(Vcb = i 5 vdc, ie =o. f = i o mhz)

FUNCTIONAL TEST

Common-Emitter Amplifier Power Gain

(VCc= 12.5 Vdc, Pout = 6.0 W)

Gpe

f = 512 MHz

f= 870 MHz

6.0

Collector Efficiency

(VCc = ' 2-5 Vdc, Pout = 5.0 W. f = 512 MHz)

Load Mismatch

No Degradation in Output Power

(Vcc = 15.5 Vdc. Pout =6.0 W. f = 512 MHz.

VSWR 30:1 At All Phase Angles)

FIGURE 1 -

440-512 MHz BROADBAND TEST CIRCUIT

O +12.5 Vdc

_cOGRD

IDHHjEh-CiQr&

C8 68 pF Mini-Underwood Mica

B1-B3 Ferrite Bead

CI 7.0 pF Unelco Mica

C2 1.0-6.0 pF Johanson Variable 5201
C3
C4
CS
C6

15 pF Unelco Mica
43 pF Mini-Underwood Mica
56 pF Mini-Underwood Mica
1000 pF Unelco Mica

C9 1.0 uF Electrolytic 25 V

CIO. C11 5.0 pF Unelco Mica

CI 2 1.0-10 pF Johanson Variable 5501
L1, L2 6 Turns, 20 AWG Wire 0.125" ID
Z1, Z2 25 Ohm uStripline (See Photo-Mask - Figure 7)
Z3-Z5 50 Ohm uStripline (See Photo-Mask Figure 7)
Board 0.032" Glass-Teflon

C7 0.1 uF Ceramic

MOTOROLA RF DEVICE DATA

2-817

MRF652

FIGURE 2 OUTPUT POWER vorsus INPUT POWER

FIGURE 3 OUTPUT POWER versus FREQUENCY

440

Pin-1.0

8.0

S> 8.0

b.o

3
5

= 0.5 w

<y=

1 4.0

S12 MHi

o
0.

= 0.25W

S 4.0

Vrr = 12.5 V

/ /

o2.0

6.0

VCC =

12.5 V

?2.0

0.2

0.4

0.6

1.0

0.8

460

Pin. INPUT POWER (WATTS)

FIGURE 4 -

520

500

FIGURE 6 - TYPICAL BROADBAND

CIRCUIT PERFORMANCE

OUTPUT POWER versus SUPPLY VOLTAGE

480

I. FREQUENCY (MHi)

8.0

i
i
Pip=1.0W_^

peut
2

B.0

e.o

=0.5

6.0

| 4.0

S4.0
P-in =0.5 W
|
Vcc = 12 5 V

J 2.0

512 M It

%2:0
21:5

_*.

VSWR
0

8.0

0
440

1:1

1
460

480

500

f. FREQUENCY (MHt)

Vct> SUPPLY VOLTAGE (VOLTS)

FIGURE 6 - SERIES EQUIVALENT

INPUT/OUTPUT IMPEDANCE

Vcc =12.5 Vdc

Pn = 5.0W
1

Ztn

ZOL*

MHz

Ohms

400

1.18 + J0.54
1.19 + J0.88
1.19 + jl.ll
1.19 + J1.35

6.7 -j6.9
7.05-j6.1
7.6 -j5.1
8.1 -J4-1

440
470
512

Zol' = Conjugate of the optimum load

impedance into whichthe device
operstes at a given output power,
voltage, and frequency.

MOTOROLA RF DEVICE DATA

2-818

520

MRF652

FIGURE 7 -

PHOTOMASTER BROADBAND TEST CIRCUIT

NOTE: The Printed Circuit Board shown is 75% of the original.

FIGURE 8 -

BROADBAND TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-819

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF653
MRF653S

The RF Line

NPN Silicon
RF Power Transistors
10 W

... designed for 12.5 Volt UHF large-signal amplifier applications in industrial
commercial FM equipment operating to 512 MHz.
Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 10 W
Gain = 8 dB (Typ)
Efficiency = 65% (Typ)
Gold Metallized, Emitter Ballasted for Long Life and Reliability
Capable of 20:1 VSWR Load Mismatch at 16 V Supply Voltage

512 MHz

RF POWER

and

TRANSISTORS
NPN SIUCON

MAXIMUM RATINGS

Rating

Symbol

Value

Unit
Vdc

Collector-Emitter Voltage

VCEO

16.5

Collector-Base Voltage

VcbO

Vdc

Emitter-Base Voltage

vebo

Vdc

Collector-Current Continuous

2.75

Adc

Total Device Dissipation @ T/\ = 25C

CASE 244-04
MRF653

Watts

0.25

W/X

Tstg

-65 to +150

200

Symbol

Max

Unit

Rfljc

Symbol

Min

Collector-Emitter Breakdown Voltage dc = 20 mAdc, lg = 0)

V(BR)CEO

16.5

Collector-Emitter Breakdown Voltage dc = 20 mAdc, Vbe - )

V(BR)CES

Emitter-Base Breakdown Voltage (Ie = 5 mAdc, lc = 0)

V(BR)EBO

Derate above 25C

Storage Temperature Range

Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic

CASE 249-05

MRF653S

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (Tc 25X unless otherwise noted.)

Characteristics

Typ

Max

Unit

OFF CHARACTERISTICS

Collector Cutoff Current (Vce = l5 Vdc. Vbe = '

>ces

Vdc

'
5

Vdc
mAdc

ON CHARACTERISTICS

DCCurrent Gain dc = 1 Adc, Vce = 5 Vdc)

hpE

120

DYNAMIC CHARACTERISTICS

Output Capacitance(Vcb - 12-6Vdc, l = 0, f = 1 MHz)

Cob

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

Gpe

(Vcc = 12.5Vdc, Pout = 10 W, f = 512 MHz)

Collector Efficiency

(Vcc = 12-5Vdc. Pout = 10 W, f = 512 MHz)

Load Mismatch Stress

(Vcc = 16 Vdc, f = 512 MHz, Pjn* = 2.6 W,

VSWR = 20:1 All Phase Angles)
Pjn - 2 dB over the typical input power required for 10W output power @ 12.5Vdc

MOTOROLA RF DEVICE DATA

2-820

No Degradation in Output Power

MRF653

Figure 1. Broadband Test Circuit

I-J-C12

( -i-CIO r-Cll

^11

^ vcc

a HhOO-@
-/
7

C1, C5 1-20 pF, Johanson

LI. L4 4-1/2 Turns, #18 AWG. 0.16" ID

L2. L3 2 Turns, #18 AWG, 0.16" ID

C2, C6 330 pF. 100 Mil ATC

C3. C4 36 pF, Mini-Unelco
C7, C12 10 uF. 35 V, Tantalum

B Ferrite Bead, Ferroxcube 56-590-65-3B

Z1 51 x 630 mils

C8. C11 0.1 /iF, Ceramic

Z2 162 x 1300 mils

CO,

C10 91 pF. Mini-Unelco

Z3 210 x 1350 mils

Z4 210x280 mils
Z5 51 x 300 mils

Board Material 0.032" epoxy glass G10. 1 oz., copper clad,

double sided, tt = 5

JPl Jumper, #14 AWG w/Banana Plugs

Figure 2. Broadband Test Circuit Schematic

MOTOROLA RF DEVICE DATA

2-821

VSWR

II "

\
\

t,c, COLLECTOR EFFICIENCY

Gpe, POWER GAIN (dB)

\ ' \

\\\

P0Ul. OUTPUT POWER IWAHS)

<-}

^s
\
\\

/ hP
T 3
1 "

\
\\
\V ,
\\ \l
\A

rW. OUTPUT POWER IWATTSI

P0ul. OUTPUT POWER IWAHS)

-n
o>
ui
CO

MRF653

Figure 8. Series Equivalent Input and Output Impedance

MOTOROLA RF DEVICE DATA

2-823

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF654

The RF Line
15 W

470 MHz

RF POWER
TRANSISTOR
NPN SILICON RF POWER TRANSISTOR

NPN SILICON

... designed for 12.5 Volt UHF large-signal amplifier applications

in industrial and commercial FM equipment operating to 512 MHz.
Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 15 W
Minimum Gain = 7.8 dB

Efficiency = 55%

Built-in Matching Network for Broadband Operation

Gold Metallized, Emitter Ballasted for Long Life and
Reliability

Capable of 20:1 VSWR Load Mismatch at 15.5 V Supply

Voltage

MAXIMUM RATINGS

Symbol

Value

UnH

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

Collector-Current Continuous

4.0

Adc

Total Device Dissipation @ T^ = 25C

Rating

Derate above 25C

Storage Temperature Range

Tsta

Watts

0.25

W/C

-65 to +150

C
0M

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

S1YU1
PIN 1 EMITTER
2 BASE
3 EMITTER
4 COLLECTOR

Symbol
Rfljc

Max

Unh

4.0

"CW

8
C
D

E
F
J
K
H

P
S
T
U

MUAGTtRS
MAX
706
726
620
650
1499
16.51
5.46
5*
140
165
152
MM

003

at?

1105
45'NOM
U7
3.0J
s
1.77
1*0
2.92
168
_

wo*s
M

MAX

0.278
0.244

0296

0.590
0.215

2-824

0650
0.235

0055
0C83

0065

0033

0007

0435
45* NOM
_

0.055

0.050
0.128
0070

0.115

0145

0.118

CASE 244-04

MOTOROLA RF DEVICE DATA

0256

MRF654

ELECTRICAL CHARACTERISTICS (Tc 2S"C unless otherwise noted.)

Symbol |

Characteristic

Min | Typ | Max | Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

v(BR|CE0

Vdc

V(BR)CES

Vdc

V(BR)EBO

4.0

(lC = 25 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage

(lC = 25 mAdc, VBE = 0)

Emitter-Base Breakdown Voltage

Vdc

E = 5.0 mAdc, lc = 0)
<ces

Collector-Cutoff Current

2.0

mAdc

(vCE = is vdc, vbe = >

ON CHARACTERISTICS
20

hpE

DC Current Gain

120

C 1.0 Adc, Vce = 5.0 Vdc)

DVNAIVKC CHARACTERISTICS

1Output Capacitance
1

Cob

(Vcb = 15Vdc, |E = 0, f = 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

Gpe

7.8

8.8

(Vcc = 12.5 Vdc, Pout = 15 W, f = 512 MHz)

Collector Efficiency

(Vcc = 12.5 Vdc, Pout = 16 W. f - 512 MHz)

No Degradation In Output Power

Load Mismatch Stress

(Vcc = I5-5 Vdc, f = 470 MHz,

2.0 dB Overdrive, VSWR = 20:1 All Phase Angles)

FIGURE 1 440-512 MHz BROADBAND TEST CIRCUIT

JP1

,^_^

r-r>>ir-^rr,r^tQE)-ti

Ll^L, C6+l

j-tQD-?-'*"^

C7^ C8^ J^jeCKEL^lcg L L

25 ^h-on
C5

CI, C5 68 pF Mini-Unelco
C2, C3 33 pF, Mini-Unelco

L2, L3 2 Turns, #18 AWG Enamel Covered, 0.16" ID

B Ferrite Bead, Ferroxcube 56-530-65-3B

C4 47 pF, Mini-Unelco

Z1-Z6 See PCB Artwork

C6, C11 10 fiF. 25 V Tantalum

C7, C10 0.1 /iF, Ceramic
C8, C9 91 pF, Mini-Unelco

Socket See Socket Drawings

JP1 Jumper, #14 AWG w/Banana Plugs

PCB 1/32" G-10, Er = 4.5 @ UHF

L1, L4 4% Turns, #18 AWG, Enamel Covered, 0.16" ID

MOTOROLA RF DEVICE DATA

2-825

MRF654

FIGURE 3 OUTPUT POWER versus FREQUENCY

RGURE 2 OUTPUT POWER versus INPUT POWER

Pjn = 2SW

440 MHi-^

^470 MHi
= 1.5 W
- 512 MHz

S12I

tHis^

470 M

\ly/

g: 9.0

- vcc = 12.5 Vdc

^-440 MHi
YCC

3.0

2.0

3.0

4.0

460

440

480

RGURE 4 OUTPUT POWER versus SUPPLY VOLTAGE

520

RGURE 5 TYPICAL BROADBAND CIRCUIT PERFORMANCE

P;n = 2.5W^

yc
>w.

500

f. FREQUENCY (MHi)

P;, INPUTPOWER (WATTS)

= i.

1 14

70%"'
^'k

50%|

^ 12

= 0. '5W

6.0

Inwi IVSWR

>6.0

'o =

512 Ml\x

--H

Pin = 2.0W
2.0

60%

1.5:1
1.4:1?

1.2:1-

vcc

1.0:1

6.0

3.0

460

Vcc.SUPPLY VOLTAGE IVOLTSI

480
f. FREQUENCY IMKl)

500

RGURE 6 SERIES EQUIVALENT INPUT AND OUTPUT IMPEDANCE

VCC = 12.5VdcPWJt15W
f
MHz
440
470
490
512

Zfn

zof

Ohmi

Ohms

2.7+J3.0
2.7+J3.2

2.6-J0.5

2.7+J16
Z5+J33

2.6-jO.I
2.6+J0.2
2.6+J0.4

Conjugttt d optimum lotdnpednc into wtiich (he

derics operate! it givtn output poww. votoge and

nti

MOTOROLA RF DEVICE DATA

2-826

MRF654

FIGURE 7 440-512 MHz BROADBAND TEST CIRCUIT

FIGURE 8 PCB BOARD LAYOUT

NOTE: The Printed Circuit Board shown is 75% of the original

MOTOROLA RF DEVICE DATA

2-827

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF660

The RF Line
7.0 W

470 MHz

RF POWER

TRANSISTOR

NPN SIUCON RF POWER TRANSISTOR

NPN SILICON

... designed for 12.5 volt UHF large signal power amplifier appli
cations in commercial and industrial FM equipment.
Low Cost Common Emitter TO-220AB Package

Specified 12.5 V, 470 MHz Performance

Output Power = 7.0 W
Power Gain = 5.4 dB Min

Efficiency 60% Min

Load Mismatch Capability at High Line and RF Input Overdrive

MAXIMUM RATINGS
Symbol

Value

Collector-Emitter Voltage

Rating

VCEO

Vdc

Collector-Base Voltage

VCBO
VebO

Vdc

4.0

Vdc

Collector-Current Continuous

2.4

Adc

Total Device Dissipation @Tc * 25C (1)

Watts

143

mW/C

Tstg

-65 to+150

Symbol

Max

Unit

Emitter-Base Voltage

Derate above 25C

Storage Temperature Range

Unit

style 2
FIN 1 BASE
2 EMITTER

1 COUECTOR
lEUTTEH
NOTES

1. DMNSI0MNG ANDTOLERANCIN0 PERANSI

VIIW. 1982.
2. CONTROLLING DIMENSION:INCH
} ON 2 DEFINES A ZONEWCRE All BODYAM)
LEADRftEGUAHTES AREALLOWED

THERMAL CHARACTERISTICS

Thermal Resistance, Junction to Case

WWB

KUMETERS
DM

Characteristic

RfljC

7.0

C/W

(DThis device is designed for RF operation. The total device dissipation rating applies
only when the device is operated as an RF amplifier.

c
D
F

KN
14 4
965
407

4S2

0169

0190

OSS

0025

373

0142

0035
0147

242
280
0.3S
12.70
1.15
4SJ

1,
o

MAX
0620
0405

361

MM
0570
0390

064

g
4

MAX
1575
1079

254

0055
0110

0155

0014

0.503

0562

0.045

>3*
V*

0193
0103

0055
0J10
0120

204
115

279

0110

1J9

00(5

597

647

0J35

oeo

127

115

0W3
0045

00
0?
W

204

CASE 221A-04
TO-220AB

MOTOROLA RF DEVICE DATA

2-828

0105

256

393
055
1127

MRF660

ELECTRICAL CHARACTERISTICS (Tc - 25C unless otherwise noted)

Characteristic

Symbol |

Min

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

Vdc

V(BR)CES

Vdc

V(BRJEB0

4.0

(lC-20 mAdc. IB -0)

Collector-Emitter Breakdown Voltage

(IC-20mAdc.VBE-0)
Emitter-Base Breakdown Voltage

Vdc

(lg = 5.0 mAdc, lc"0)

Collector Cutoff Current

Ices

5.0

mAdc

(VCE " 15 Vdc.Vbe - 0. TC = 25CI

ON CHARACTERISTICS

DC Current Gain

hFE

160

(lC " 250 mAdc, Vce 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

(VCB" 12.5 Vdc. le-0,f = 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

GPE

5.4

6.0

(VCc " '2.5 Vdc, Pou, - 7.0 W, f - 470 MHz)

Collector Efficiency

(VCC " 12.5 Vdc, Pout - 7.0 W, f = 470 Mhz)

FIGURE 1 -TEST CIRCUIT

HF Input(

-|f

j|Boad]

tlC

Vrr - 12.5 Vdc

""rvy

-vy-n_j

I ^r?C1

4?)RF Output

ic4 A

C1, C9 1-10pF Johanion

C2, C8 - 15 pF Underwood Elect. Co. Typo J101

C3 - 270 pF, ATC Chip Capacitor Cato B

NOTE:

C4, C6 - 24 pF ELMENCO MCN01/010

C5 - 0.1 pF Ceramic, Erie
C7 - 1.0 uF, 35 V, Tantalum
LI - 27 nH Coppor Strap 0.150" X 0.025" X 1.5" (See Noto)
L2 - 16 nH Copper Strap 0.150" X 0.025" X 1.0" (See Noto)
RFC1 - 0.68 uH Molded Choko. Cambion
RFC2 - 4 Turns #20 AWO, 0.312" IO X 0.25" Long
RFC3 - Forrite Choko, Ferroxcube #VK200-20/4B

fWf\
0.825"

Bead Ferrite Bead, Ferroxcube #56-590-65-3B

Printed Circuit Board Material - 3M #K6098-22062, Teflon Fiberglass

or equivalont

MOTOROLA RF DEVICE DATA

2-829

MRF660

FIGURE 2 - OUTPUT POWER versus INPUT POWER

FIGURE 3 - OUTPUT POWER versus FREQUENCY

1
12

V(X ' 13.6 \

7.5 Vt

_2.0 W

g 8.0

= 6.0

- Vjc

---pN

12.5 V
<

n^3.0W

L 2.5W\J

1.5W

|
LOW

4.0

o?
2.0

0.5W
2.0

1
1.5

2.0

440

Pj. INPUT POWER (WATTS)

460

f, FREQUENCY (MHt)

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

j; 9.0

2
CE

7.0

3
3
O

f 5.0

470MHi

Pin2.0 Watts

3.0

VCc, SUPPLY VOLTAGE (VOLTS)

FIGURE 5 - SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES

Pin 2.0 W.VCC -12.5 V

Zin

zol*

MHi

Ohms

400

6.5 + 0.5

425

2.8 +19.0
2.9* |I0.1

450

3.0 + J10.5

470

3.1+J11.2
3.4+JI2.2

500

6.8 +J4.0
7.2 +J4.8
7J + J5.4
7.3+J6.4

Zql*" ConjujMe of tha optimum

load imptdanta into which the device
output oparatas at a given output
powtr, voltage, and frequency.

MOTOROLA RF DEVICE DATA

2-830

MRF660

FIGURE 6 - UHF TEST AMPLIFIER

FIGURE 7 - PRINTED CIRCUIT BOARD

NOTE: The Printed Circuit Board shown is 75% of the original.

MOTOROLA RF DEVICE DATA

2-831

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF750

The RF Line
0.6 W 470 MHZ 7.5 V

HIGH FREQUENCY
TRANSISTOR

NPN SILICON HIGH FREQUENCY TRANSISTOR

. . .designed for 5.0 to 10 Volt UHF large-signal amplifier applications

in industrial and commercial FM equipment operating in the 407 to
512 MHz range. Ideally suited for handheld radios and other equip

NPN SILICON

ment where high packaging density is required.

Specified 7.5 Volt, 470 MHz Characteristics Output Power = 0.5 Watts
Minimum Gain = 10 dB

Minimum Efficiency = 55%

Capable of Withstanding Load Mismatch at Highline

Silicon Nitride Passivation

and RF Overdrive

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

Vceo

Vdc

Emitter-Base Voltage

Vebo

4.0

Vdc

'C
pd

200

mAdc

2.5

Watts

mW/>C

Tsto

-65to+150C

Symbol

Max

Unit

RfljC

28.5

OC/W

Collector-Current-Continuous

Total DeviceDissipation @Tg 26C (1)

Derate Above 25C

Storage Temperature Range

STYLE 1:
PIN1. EMITTER
2.8ASE
3. EMITTER
4. COLLECTOR

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case 12)

IUUIMETBIS

EXM

tm
508
2.41
1.40
1.02
0.64

measurement techniques.

0.03

MAX
5.59
130
1.65
U7
069
0.18

11.05
45 NOM
_

INCHES
WN

MAX

0200

0220

0.095
0.055
0.040
0.025
0.003
0.435

2-832

45 NOM

CASE 305A-01

MOTOROLA RF DEVICE DATA

0.133
0.065

0.050
0.035
0.007

MRF750

ELECTRICAL CHARACTERISTICS (Tc - 25C unless otherwise noted)

[ Symbol |
Characteristic

Min

T*"

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage

V(BR)CEO

V(BR)CES

V(BR)EB0

4.0

Vdc

(lC-10 mAdc. Ib-0)

Collector-Emitter Breakdown Voltage

Vdc

(lC " 10 mAdc, Vbe " >

Emitter-Base Breakdown Voltage

Vdc

0e = 1.0 mAdc. lc-0)

'CBO

Collector Cutoff Current

0.5

mAdc

(Vcb 9.o vdc, >e"0)

ON CHARACTERISTICS
65

hFE

DC Current Gain

(lC " 50 mAdc, VcE " 5-0 Vdc)

DYNAMIC CHARACTERISTICS
Output Capacitance

Cob

3.0

5.0

(VCb " 7.5 Vdc, l - 0, f 1.0 MHz)

FUNCTIONAL TESTS
Common-Emitter Amplifier Power Gain

Gpe

(VCc " 7.5 Vdc, Pout " 0.5 W, f - 470 MHz)

Collector Efficiency

(VCC " 7-5 Vdc, P0ut " 0.5 W, f - 470 MHz)

FIGURE 1 - 470 MHz TEST CIRCUIT

RFC1 [J

1 r

TcB

Jf? j

RF Input > J\ff

OO-

<RF Output

7,\ci

T,.
C1, C2, C3, C4, - Johanion Trimmer, JMC#S501

21, 22
23
24
Z5

CS - J101, 100 pF Unelco

C6, C7 680 pF Allan Bradley Feedthru

CB 1.0 jiF Tontatum

Microstrip W
Microstrip W
Microstrip W
Microstrip W

0.26", L - 2.9"
O.B", L - 1.2"
0.C8B", L - 3.9"
0.055", L - 2.9"

RFC1 - Ferroxcube Bead, 56-690-66-3B

Board Material Gloss Toflon, t - 0.062

RFC2 - Choke, VK 200/4B

e, - 2.S

MOTOROLA RF DEVICE DATA

2-833

MRF750

FIGURE 2 -

FIGURE 3 - OUTPUT POWER versus INPUT POWER

POWER GAIN versus FREQUENCY

450 MHz

Vcc * if v
Vcc-

7.5 V

10 V_

5.0 V

7.5 V_

9.0

o
a.

8.0

7.0

5.0 V

pout -0.5W
470
480
430
f. FREQUENCY (MHt)

! 4 - OUTPUT POWER versus INPUT POWER

FIGURE 5 - OUTPUT POWER versus INPUT I

470 MHz

512 MHz

1.0

0.9

Pin. INPUTPOWER ImW)

0.9

0.8

35 0.8

vCc = 10 V-

Vcc-

0.7

< 0.7

-7.5 V

7.5 V

g 0.6

S 0.6

5.0 V

t 05

f 0.5

I - 0.4

5.0 V

0.4

lo.3

'112

J 0.2

0.1

0.3

100

110

Pin. INPUTPOWER (mW)

Pjn, INPUTPOWER ImW)

FIGURE 6 - SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES

Poul 0.5 W VCC-7.5 V

MHz
4S0
470
512

Zin
Ohms

4.4 -J7.5
4.4-J7.1
4.4-J6.7

ZOL*
Ohms

20.9 -J19.7
20.7 -j 18.9
20.1 -J17.6

ZOL - Conjugal* ol thi optimum load

impedance into which the deviceoperates
at a given output power, voltage, and

frequency.

MOTOROLA RF DEVICE DATA

2-834

10V

MRF750

FIGURE 7 - 470 MHz TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-835

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

IY1RF752

The RF Line
2.5 W 470 MHZ -

HIGH FREQUENCY
TRANSISTOR

NPN SILICON HIGH FREQUENCY TRANSISTOR

NPN SILICON

. . .designed for 5.0 to 10 Volt UHF large-signalamplifier applications

in industrial and commercial FM equipment operating in the 407 to
512 MHz range. Ideally suited for handheld radios and other equip
ment where high packaging density is required.

7.5 V

Specified 7.5 Volt, 470 MHz Characteristics Output Power = 2.5 Watts
Minimum Gain - 8.0 dB

Minimum Efficiency = 55%

Capable of Withstanding Load Mismatch at High Line

and RF Overdrive

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Emitter-Base Voltage

VEbo

4.0

Vdc

'C
PD

1.2

Adc

Collector-Current-Continuous

Total Device Dissipation S> Tq = 25C (1)

Watts

85.5

mW/0C

Tstg

-65to+150C

Symbol

Max

Unit

RflJC

11.7

OC/W

Derate Above 25C

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case (2)

STYLE 1:
PIN 1. EMITTER
2. BASE

(1) This device is designed for RF operation. The total device dissipation rating applied
only when the device is operated as an RF amplifier.
12)Thermal Resistance is determined under specified RF operating conditions by infrared

3. EMITTER
4. COLLECTOR

measurement techniques.
ULUKETBtS
MAX

7.06
23*

C
0

J
K
M
S

5.46
0.08

INCHES
MAX

am
0.112
0.215

0.18

0.007
0.003
0.435
45" NOM

11.05
45 NOM
_

1.40 1 1.65

2-836

0.136

p.235

0055 I 0065

CASE 249-05

MOTOROLA RF DEVICE DATA

0.285

7.26
its
5S7

MRF752

ELECTRICAL CHARACTERISTICS (Tc - 25C unlessotherwisenoted)

Characteristic

Symbol

Min

Typ

Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage

V(BR)CEO

V(BR)CES

Vdc
~

(lC - 25 mAdc. Ib - 0)
Collector-Emitter Breakdown Voltage

Vdc

(lC - 25 mAdc, VflE " 0)

Emitter-Base Breakdown Voltage

Vdc

4.0

V(BR)EB0

<IE -3.0 mAdc, lc-0)

1.0

'CBO

Collector Cutoff Current

mAdc

IVcb " 9-0 Vdc. le-0)

ON CHARACTERISTICS

I DC Current Gain

hFE

(lc - 100 mAdc, Vce " S.O Vdc)

DYNAMIC CHARACTERISTICS
Output Capacitance

Cob

(VCB 7.5 Vdc, lE-0.f1.0MHz)

FUNCTIONAL TESTS
9.0

8.0

Gpe

Common-Emitter Amplifier Power Gain

(VCC" 7.5 Vdc, Pout= 2.5 W. f 470 MHz)

Collector Efficiency

(VCC" 7-5 Vd. pout" 2.5 W.f470MHz)

FIGURE 1 - 470 MHz TEST CIRCUIT

RFC2

t_9 /vw> _ __ovdc

C7 icC8

<^RF Output

CI, C2, C3, C4 - Johanson Trimmer JMC#5S01

C5 - J101, 100 pF Unolco
C6 - J101, 16 pF Unelco

C7, C9 - 680 pF Allen Bredloy Feedthru

CB 1.0 uF Tantalum

21. 22 - Microstrip W = 0.26", L - 2.9"

23 - Microstrip W - 0.5". L 1.2"
24 - Microstrip W 0.056", L - 3.9"
25 - Microstrip W - 0.055", L - 2.9"
HFC1 Forroxcube Bead, 86-590-65-30
RFC2 - Choke, VK 200/4B
Board Material Gists Taflon
t - 0.062

, - 2.5

MOTOROLA RF DEVICE DATA

2-837

MRF752

FIGURE 2 - POWER GAIN versus FREQUENCY

FIGURE 3 - OUTPUT POWER versus INPUT POWER

450 MHz

SJ4.0

7.5 V

ucc 10V_

S 3.0
7.5 V

5.0 V

| 2.0
5.0 V

P0-2.5W

440

450

460

470
480
490
f. FREQUENCY (MHz)

500

510

520

0.1

0.2

0.3

0.4

0.5

0.6

0.7

Pin. INPUTPOWER (WATTS)

FIGURE 4 - OUTPUT POWER versus INPUT POWER

FIGURE 5 - OUTPUT POWER versus INPUT POWER

470 MHz

512 MHz

'CC

Vcc

10\

7.5 V

1
1

3.0

5.0 V

0.2

0.3

0.4

0.5

0.2

Pj. INPUTPOWER(WATTS)

0.3

0.4

0.5

P;. INPUTPOWER (WATTS)

FIGURE 6 - SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES

Pout 2.5W.VCC"
f

Zin
Ohms

450
470
512

1.0 +J0.5
1.0 +J0.7
I.0*j1.0

7.5 V

zol'
Ohms

3.6 -J3.5
3.6 -J3.4
3.6 -j3.2

ZOL* * Conjugate of theoptimum load

impedance into which ihe device operates
at given output power, volltge. and
frequency.

MOTOROLA RF DEVICE DATA

2-838

MRF752

FIGURE 7 - 470 MHz TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-839

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF754

The RF Line
8.0 W -

470 MHz -

7.5 V

HIGH FREQUENCY
TRANSISTOR

NPN SILICON HIGH FREQUENCY TRANSISTOR

NPN SILICON

... designed for 5.0 to 10 Volt UHF large-signal amplifier applica

tions in industrial and commercial FM equipment operating in the
407 to 512 MHz range. Ideally suited for handheld radios and other

equipment where highpackaging densityis required. "''.

Specified 7.5 Volt. 470 MHz Characteristics

Output Power = 8.0 Watts

Minimum Gain = 6.0 dB

Minimum Efficiency = 55%

Capable of Withstanding Load Mismatch at Highline and RF

Overdrive

MAXIMUM RATINGS

Rating
Collector-Emitter Voltage

Emitter-Base Voltage
Collector-Current Continuous

Total Device Dissipation @ Tc = 2SC (1)

Symbol

Value

Unit

VCEO
VEB0
'C

Vdc

4.0

Vdc

3.0

Adc

37.0

Watts

214

mW/C

-65to+150C

Derate Above 2SC

Storage Temperature Range

Tstg

STYLE 2:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
SEATING PLANE=

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case (2)

Symbol

Max

Unit

RflJC

4.7

C/W

GROUNDANDIS
CONNECTEDTO

PIN1 ANDPIN3.

measurement techniques.
DEM
A

C
D
1

K
M

WLUMETERS
WAX
UN
7.06
284

5.46
0.06
11.05

726
3.45
537
018
_

INCHES

MM
0178
0.112
0115
0.003
0.435

2-840

0235
0007
_

45 NOM

1.(0 1 1.65

0.055 1 0065

CASE 249-05

MOTOROLA RF DEVICE DATA

MAX
0286
0.136

MRF754

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted)

Characteristic

Typ

Max

Unit

Symbol

Min

V(BR)CE0

V(BR)CES

Vdc

V(BR)EB0

4.0

Vdc

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage

Vdc

OC=50mAdc. Ib = 0)
Collector-Emitter Breakdown Voltage

dC = 50 mAdc, Vbe = >

Emitter-Base Breakdown Voltage

(lE= 3.0 mAdc. lc = 0)

'CBO

Collector Cutoff Current

(vCb =9 0 vdc. Ie =o)

1.0

mAdc

ON CHARACTERISTICS
85

hFE

DC Current Gain

(Ir = 200 mAdc. Vce = 50 Vdc)

DYNAMIC CHARACTERISTICS
Output Capacitance

Cob

(VCB = 7.S Vdc. Ig = O, f = 1.0 MHz)

FUNCTIONAL TESTS
Common-Emitter Amplifier Power Gain

Gpe

6.0

7.0

(Vcc =7-5 Vdc- pout =8.0 W, f =470 MHz)

Collector Efficiency

(Vcc = 75 Vdc, Pout = 80 W. f = 470 MHz)

FIGURE 1 - 470 MHz TEST CIRCUIT

RFC2

X
rfcim ~pC5P
Z4

leg
Tz5

c:
C3

-^RF Output

t>7f/ T. LZZ>

/-C4

f^-C2

CI. C2. C3, C4 - Johanson Trimmor JMC#S801

C5 - J101. 100 pF Unolco
C6 - J101, 15 pF Unelco
C7. C9 - 680 pF Allen Bradley Feedthru
C8 1.0 pF Tantalum
Zl. Z2 - Microstrip
Z3 - Microstrip W Z4 - Microstrip W Z5 - Microstrip W -

W - 0.26". L - 2.9"
0.5", L 1.2"
0.055", L - 3.9"
0.055", L - 2.9"

RFC1 Farroxcubo Bead, 56-590-65-3B

RFC2 - Choko. VK 200/4B
Board Matorial Gloss Toflon
t - 0.062
e, - 2.5

MOTOROLA RF DEVICE DATA

2-841

MRF754

FIGURE 3 OUTPUT POWER versus INPUT POWER

FIGURE 2 POWER GAIN versus FREQUENCY

Vcc

450 MHz

= 10V

vcc

= 10 V

= 7.5V

= 7.S V"

1
"5.0 V

= 5.0V

Pout= 8.0 W
440

450

460

470

480

490

500

510

520

2.0
3.0
Pin. INPUT POWER (WATTS)

f. FREQUENCY (MHt)

FIGURE 4

OUTPUT POWER versus INPUT POWER

FIGURE S -

4.0

5.0

OUTPUT POWER versus INPUT POWER

470 MHz

S12MHz

20
18

vcc

= 10 V

1
= 7.5V

= 10V

= 7.5 V

= 5.0 /

= 5.0V
8.0
6.0
4.0

2.0
0

1.0

2.0

3.0

5.0

2.0

Pi. INPUT POWER (WATTS)

3.0

4.0

Pin. INPUT POWER (WATTS)

FIGURE 6 SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES

Pw, = 8.0 W. VCc = 7.5 V

1
MHz

Ohms

450
470
512

1.0 + JI.8
0.9 + ,2.1
0.9+J2.3

3.7 - jO.3
3.4 -jO.3
2.9-J0.2

Zin

#1*

Zol* =Conjugate ol ths optimum load impedance

intowhich ths deviceoperates ata givenoutput
power, voltage, and frequency.

MOTOROLA RF DEVICE DATA

2-842

MRF754

FIGURE 7 -

470 MHz TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-843

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF837

The RF Line
750 mW

870 MHz

NPN SILICON RF LOW POWER TRANSISTOR

RF LOW POWER

... designed primarily for wideband large signal predriver stages

in 800 MHz and UHF frequency ranges.

TRANSISTOR
NPN SILICON

Specified (a 12.5 V, 870 MHz Characteristics

Output Power = 750 mW
Minimum Gain = 8.0 dB

Efficiency 60% (Typ)

Low Cost Macro-X Plastic Package

State-of-the-Art Technology
Fine Line Geometry
Gold Top Metal and Wires
Silicon Nitride Passivated

Ion Implanted Arsenic Emitters

Macro-X

Rating

Symbol

Value

Unit

vCEO

Vdc

V ' J

Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Current Continuous

Total Device Dissipation m Tq - 50"C

Derate above 50'C

MAXIMUM RATINGS

vCBO

Vdc

vEBO

4.0

Vdc

200

mAdc

2.5

Watts

mW'C

G
.

(1)

Storage Temperature Range

Thermal Resistance. Junction to Case

' i
SEATING PLAN!

TJ- Tstg

-65 to -150

Symbol

Max

Unit

PIN 1 COUECTOR
2 EMITTER

Rtfjc

(EMITTER

STYLE 2

THERMAL CHARACTERISTICS
Characteristic

3 BASE

(1) Case temperature measured on collector lead immediately adjacent 10 body o( package.
NOTE

DIMENSION 0 NOTAPPLICABLE INZONE \

MILUM 7ERS

INCHES

MIN

MAX

111

0175

0205

521
254

0075

: i go

on
020
076

F
G
K
I

099

0033

030

0008

0012

0030

: ::

721

813

0285

I0SS

1113

0115

CASE 317-01

MOTOROLA RF DEVICE DATA

2-844

: v.:

0065

MRF837

ELECTRICAL CHARACTERISTICS (Tr 25C unless otherwise noted.)

Symbol

Characteristic

Min I Typ

Max

Unit |

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

Vdc

V(BR)CES

Vdc

V(BR)EBO

4.0

Vdc

dC 5.0 mAdc. Ib - 0)
Collector-Emitter Breakdown Voltage

(lC = 5.0 mAdc,Vbe 0)

Emitter-Base Breakdown Voltage

E = 0.1 mAdc, lc 0)
mAdc

'CES

Collector Cutoff Current

(Vce = is vdc, Vbe o. Tc = 25'C)

ON CHARACTERISTICS
30

hpE

DC Current Gain

dC = 50 mAdc, Vce

200

1.8

2.5

10 Vdc)

DYNAMIC CHARACTERISTICS

Cob

Output Capacitance

(VCB =J5VdOE

0,f = 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain

jpe

8.0

(VCC " 12.5Vdc. Pout " 0.75W,f = 870 MHz)

Collector Efficiency

(Vcc = 12.5Vdc.Pout 075 W,f = 870 MHz)

RGURE 1 800-880 MHz BROADBAND CtRCUIT

C1, C2, C5
C3
C6
C4
C7
C8

0.8-8.0 pF Johanson Gigatrim

5.0 pF Clamped Mica, Mini-Underwood
91 pF Clamped Mica, Mini-Underwood
470 pF Ceramic Chip Capacitor
68 pF Clamped Mica, Mini-Underwood
1.0 ftF 25 V Tantalum

LI, L2
L3
Zl
Z2
Z3. Z4
Z5

4 Turns, #21 AWG, 5/32* ID

Bead, Ferroxcube 56-590-65/3B

PCB

1/16* Glass Teflon, <r = 2.56

7 Turns, #21 AWG, 5/32* ID

0.80" x 0.163" Microstrip, Zq = 50 O

1J75" x 0.163* Microstrip, Zq = 50 O

0.375" x 0.163" Microstrip, Z~ = 50 ft

1.35" x 0.163" Microstrip, Z0 = 50 n

MOTOROLA RF DEVICE DATA

2-845

MRF837

FIGURE 2 800-880 BROADBAND CIRCUIT

mjc

FIGURE 3 800-880 MHz BROADBAND CIRCUIT PHOTOMASTER

NOTE: The Printed Circuit Board shown is 75% of the original.

MOTOROLA RF DEVICE DATA

2-846

MRF837

800/900 MHz BAND DATA

RGURE 4 BROADBAND PERFORMANCE
tooo

1
Pout

Pjn = B0mW _

vcc= "'vac

BOO

70S lc
"c

600

503

400

10 E
200

is I:

IRL

IRL
dB

20
840

820

800

I, FREQUENCY (MHt)

FIGURE S Zin AND Zql versus COLLECTOR VOLTAGE, INPUT POWER AND OUTPUT POWER
Zin

Zol*

Ohms

VCc = w v

Vcc = 12.5 V

MHz

P| = 150 mW

P| = 100 mW

Vcc = 7-5 V
Pout 806 MHz = 870 mW
Pout 870 MHz = 820 mW
Pout 960 MHz = 700 mW

806

6.1 + J3.6

4.3 + jO.6

38.3 - J16.4

23.2 - J31.6

41.3 - J18.4
41.4 - J19.0

Frequency

870

5.6 + J5.2

6.5 + J3.6

40.8 - J18.9

960

6.1 + J6.8

6.4 + J4.5

43.8 - J14.7

VCC = 1" V
Pout 806 MHz = 1.05 W

Pout 670 MHz = 950 mW

Pout 960 MHz = 725 mW

Zfji =Conjugate of the optimum load impedance into which the device output operates at agiven output power, voltage, and frequency.

MOTOROLA RF DEVICE DATA

2-847

MRF837

800/900 MHz BAND DATA (continued)

RGURE 6 OUTPUT POWER versus
INPUT POWER
f - 870 MHz

RGURE 7 OUTPUT POWER versus

FREQUENCY

Vcc = 7.5 Vdc

Pjn = laumrr
_

.-JOOrnW^
500

.^OmW

105

120

135

150

0
800

820

Pin. INPUT POWER (mW)

840

900

920

f. FREQUENCY (MH*)

RGURE 8 OUTPUT POWER versus

RGURE 9 OUTPUT POWER versus

COLLECTOR VOLTAGE
f = 870 MHz

Vcc = 12.5 Vdc

8.0

FREQUENCY

900

f. FREQUENCY (MHz)

Vcc,COLLECTOR VOLTAGE (Vdc)

MOTOROLA RF DEVICE DATA

2-848

940

960

MRF837

UHF BAND DATA

FIGURE 10Zjn AND Zql versus COLLECTOR VOLTAGE. INPUT POWER. AND OUTPUT POWER
Zin

zol"

Ohms

Vcc = 7.5 V

VCC = 12-5 V
Pout 400 MHz = 1.25 W
Pout 450 MHz - 1.1 W

Vcc = 12-5V

VCC = 7-6 V

Pout 512 MHz = 775 mW

MHz

P(n = 78 mW

Pin =. 50 mW

Pout 400 MHz = 875 mW

Pout 450 MHz = 790 mW
Pout 512 MHz = 675 mW

400

9.6 - 17.5

8.2 - jll.5

37.8 + J12.3

51.8 - J7.2

450

11.3 - J7.5

9.7 - jll

35.8 + J8.6

52.2 - J16.7

512

11.5 - J6.8

12 - J9.2

42.4 + jO.24

43.7 - J5.7

Frequency

Zql =Coniugato ofthe optimum load impedance into which the device output operates ata given output power, voltage end frequency.

RGURE 11 OUTPUT POWER versus

INPUT POWER

RGURE 12 OUTPUT POWER versus

f = 512 MHz

Vcc = 7.6 Vdc

FREQUENCY

rf-u
50 mV '

J bmlA

too

4 20

Pin, INPUT POWER (mW)

4lBO

* to

480

500

f.FFIEQUENCYIIlUfe)

RGURE 14 OUTPUT POWER versus

RGURE 13 OUTPUT POWER versus

COLLECTOR VOLTAGE

FREQUENCY

Vcc = 12.5 Vdc

f = 512 MHz

440

460

480

(.FREQUENCY (MHz)

Vcc. COLLECTOR VOLTAGE (Vdc)

MOTOROLA RF DEVICE DATA

2-849

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF838
IY1RF838A

The RF Line

1W-870 MHz

RF POWER
TRANSISTORS
NPN SILICON

NPN SIUCON RF POWER TRANSISTORS

...designed for 12.5 volt UHF large-signal, common-emitter

amplifier applications in industrial and commercial FM equipment
operating in the range of 806-960 MHz.
smii:
mi.BOTTB
lEutrmi

tcomooa

Specified 12.5 Volt, 870 MHz Characteristics:

Output Power = 1.0 Watt
Minimum Gain - 6.5 dB

Efficiency = 60% Typ

Series Equivalent Large-SignalCharacterization

fMES
Mff
MM

muktrs
on

m
w

MS
nti
IM

tut

0*0

MS
IV

(KB

CM
OB
an
V)
n
im
l
CM

MRF838A
CASE 305-01

w
'fl

1.71

lit

t
m

07
OStt
sm
coa

am
M
oo
aon
MS
MB
CM
CPOM
BtQSS
tea
am
am

ao
OMS
MK
atse
am

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Vdc

Collector-Base Voltage

VCEO
VcbO

Vdc

Emitter-Base Voltage

Vebo

4.0

Vdc

Collector Current Continuous

0.3

Adc

Total Device Dissipation 9 Tq - 25C (11

2.5

Watts

0.014

W/C

Tstg

-65 to +1 SO

Symbol

Max

Unit

RejC

C/W

Collector-Emitter Voltage

Derate Above 25C

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case (2)

SlYtfl:

wi.ama
ins
IMtTH)

(1) These devices are designed for RF operation. The total device dissipation ratingapplies

tCCUKTOH

only when the devices are operated as RF amplifiers.

MUM

(2) Thermal Resistance is determined under specified RF operating conditions by infrared

measurement techniques.
MRF838
CASE 305A-01

MOTOROLA RF DEVICE DATA

2-850

MM
it*
H
Ml
w
U
IB
W
IV
m
SB
CM
M
11
tFHOU

M KB
HU

OJW
CJSS

MS
M
oca
em

00
aw
cte
oao
aw

*T*M

MRF838, MRF838A
ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted)
Typ

Symbol

Characteristic

OFF CHARACTERISTICS

V(BR)CE0

Collector-Emitter Breakdown Voltage

tlc 10 mAdc. Ifl 0)

V(BR)CES

Collector-Emitter Breakdown Voltage

llc 10mAdc, Vg,E 0>

V(BR|EB0

Emitter-Base Breakdown Voltage

(lE-0.1 mAdc. Ic0)

1.0

ices

Collector Cutoff Current

(Vce " is vdc. vbe . Tc 2SC>

ON CHARACTERISTICS

hFE

DC Current Gain

(lC 100 mAdc.Vqe 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

5.0

Cob

(VCB 125 Vdc,Ie 0, f 1.0 MHz)

FUNCTIONAL TEST

Common-Emitter Amplifier Power Gain

GpE

6.5

7.5

dB
-

(Pout - 1-0W, VCc " 12-5 Vdc- f = 870 MHz>

Collector Efficiency

| (Pou, - 1.0 W, VCC =12.5 Vdc. f=870 MHz)

FIGURE 1 - 870 MHz TEST CIRCUIT

Vcc = +12.5 V

Ct. CS, C9 0.8-8.0 pF Johanson Gisatrim #7291

C2, C3 - 10 pF ATC Chip Capacitor (Case A)
C4 1.0 pF 30 V Tantalum Capacitor

LI. L2 -

Farroxcubo VK200 20/4B

Ferroxcube #56-590-65/38

Z1, Z2 - 1.2" X 0.155" Microstrip

C6 - 0.1 pF Erto Redcap 100 V

C7. C8 - 680 pF Feedthru
C10 - 100 pF Chip Capacitor (100 mil)

L3 -

RFC -

Bead -

Z3 -

1.05" X 0.155" Microstrip

Z4 - 0.5" X 0.155" Microstrip

25 -

1 Turn #18 AWG 1/8" Oiomotor

1.5" X 0.155" Microstrip

Board Material 0.0625" Thick Gloss-Teflon, er = 2.5

#14 AWG 1/2 Turn 0.2S0" Oiamotor

MOTOROLA RF DEVICE DATA

2-851

MRF838, MRF838A

FIGURE 2 - OUTPUT POWER versus INPUT POWER

FIGURE 3 - OUTPUT POWER versus FREQUENCY

1.8

1.2

-175raW

i.o

0.8

0.6

"100mW

I- 170 MHz
0.4

vc :- 12.5V

MVcc

0.2

125

ISO

175

200

225

250

275

300

840

Pjn.INPUT POWER <mW)

860

I. FREQUENCY (MHt)

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

2.0

1.8
Tn

Pi 250 raW

&
IE

1.2

- 175 mW

1.0
=3
3
O

0.6

0.4

f870MH2
0.2

7.5

8.5

9.5
10.5 11.5 12.5 13.5
Vcc. SUPPLY VOLTAGE(VOLTS)

FIGURE S - SERIES EQUIVALENT INPUT IMPEDANCE

14.5

15.5

16.5

FIGURE 6 - SERIES EQUIVALENT OUTPUT IMPEDANCE

Pou1-LOW. VCC"12.5 Vdc

PoutLOW, Vcc =,2-5 Vdc

I
MHz

800
836
. 870
SOO

Ohms

800

17.1-J22.2
16.6-120.0
16.1-J17.4
15.9-jl 5.0

Ohms

836

2.8 +J4-6
2.6 +(5.0
2.4 +J5.6
2.3 + J6.2

870
900

Zqi' * Conjugstt ol ths optimum lotd

impedance into which ths dtvict

output operatestl a given power,

voltage,and frequency.

MOTOROLA RF DEVICE DATA

2-852

Zol*

MHi

MRF838, MRF838A

FIGURE 7 - 870 MHz TEST CIRCUIT

NOTE: The Printed Circuit Board shown is 75% of the original.

MOTOROLA RF DEVICE DATA

2-853

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF839
MRF839F

The RF Line

NPN Silicon

RF Power Transistors
3 W 806-960 MHz
RF POWER
TRANSISTORS
COMMON-EMITTER

.. designed for 12.5 Volt UHF large-signal, common-emitter amplifier applications in

industrial and commercial FM equipment operating in the rangeof 806-960 MHz.
Specified 12.5 V 870 MHz Characteristics

Output Power = 3 Watts

Minimum Gain - 8 dB

NPN SIUCON

Minimum Efficiency = 55%

100% Tested for Load Mismatch at Rated Input Power and 15.5 V
Series Equivalent Large-Signal Characterization
MAXIMUM RATINGS
Rating

Symbol

Value

Collector-Emitter Voltage

VcEO

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

Unit

vebo

3.5

Vdc

Collector-Current Continuous

0.6

Adc

Operating Junction Temperature

200

Total Device Dissipation <& Tc = 110C

111

Watts
WVC

Tstg

-65 to +150

Symbol

Max

Derate above 110C

Storage Temperature Range

CASE 305-01, STYLE 1

MRF839

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

R&JC

CASE 319-06. STYLE 2

Unit

MRF839F

C/W

ELECTRICAL CHARACTERISTICS (Tc = 28^ unlessotherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter BreakdownVoltage dc = 5 mAdc,!b = 0)

V(BR)CEO

Collector-Emitter Breakdown Voltage dc 5 mAdc, Vbe = 0)

V(BR)CES

Emitter-Base Breakdown Voltage(Ie = 0.1 mAdc, lc = 0)

V(BR!EBO

3.5

Collector CutoffCurrent (Vce = 15 Vdc,Vbe = 0, Tc = 25C)

Ices

Vdc

mAdc

ON CHARACTERISTICS

DC CurrentGaindc = 100 mAdc, Vce s Vdc)

hFE

30'

150

6.5

DYNAMIC CHARACTERISTICS

Output Capacitance (Vcb - 15 Vdc, lg = 0, f = 1 MHz)

Cob

FUNCTIONAL TESTS (FIGURE 1)

Common-Emitter Amplifier Power Gain

(Pout = 3 W, VCc = 125 Vdc, f = 870 MHz)

Collector Efficiency(Pout = 3 W, Vcc = 12.5 Vdc, f = 870 MHz)

Gpe

Load Mismatch Stress

(Vcc = 15.5 Vdc, Pj = 0.5 W, f = 870 MHz,

VSWR = 20:1, all phase angles)

No Degradation in Output Power

MOTOROLA RF DEVICE DATA

2-854

MRF839, MRF839F

LI. L2 4 Turns, #18 AWG. 5 32 ID

CI. C11 43 pF ATC. Chip Cap. Case B

L3 7 Turns, #18 AWG, 5/32 ID

C2, CIO 0.8-8 Johanson Gigatrim

Zl 0.850"
Z2 1.100"
Z3 0.920"
Z4 1.150"

C3, C4 10 pF Clamped Mica, Mini-Underwood

C5, C6. C7 68 pF Clamped Mica, Mini-Underwood
C8 10 pF. 25 V Tantalum

C9 5 pF Clamped Mica, Mini-Underwood

x 0.077"
x 0.077'
x 0.077"
x 0.077"

Microstrip,
Microstrip,
Microstrip,
Microstrip,

Z0
Z0
Z0
Z0

=
=
=

50
50
50
50

11
11
11
11

Board Material 0.032"Glass Tellon. 2 oz. Copper Clad. er = 2.55

B Bead. Ferroxcube #56-590-65/3B

Figure 1. MRF839 800-880 MHz BroadbandTest Circuit

Figure 2. MRF839 Broadband Test Circuit

lor

NOTE: The Printed Circuit Board shown is 75% of the original.

Figure 3. MRF839 Photomaster

MOTOROLA RF DEVICE DATA

2-855

MRF839, MRF839F
MRF839

Pin - 0.75 W0.50 W

0.25 W

vCc = tf-sv*
02

0.4

0.6

800

820

840860880900

Pjn,INPUT POWER (WATTS)

920

940960

f, FREQUENCY (MHz)

Rgure 4. Output Power versus Input Power

Rgure 5. Output Power versus Frequency

CIRCUITRGURE 1

-Pin ;

'Haw

P -u.J
V<r = 12.5Vdc

60
0.25 W

o =

870 MH*

2.0:1

1.5:1 g
12

800

810

820

Vcc.SUPPLY VOLTAGE (VOLTS)

840

850

860

1.0:1
880

870

I, FREQUENCY (MHz)

Rgure 6. Output Power versus Supply Voltage

Rgure 7. Broadband Performance

pout= 3Watts, Vcc =

Zin

f
MHz
806

870
960

2.5 Vdc

ZOL*

Ohms

3.1 + J4.0
2.8 + J4.6
13 + J5.4

9.6 - J6.5
8.5 - J5.6
8.1 - J4-8

Zol' - Conjugate oftheoptimum load impedance into

which thedevice operates ata given output power, volt
age,andfrequency.

Rgure 8. Series Equivalent Input/Output Impedances

MOTOROLA RF DEVICE DATA

2-856

MRF839, MRF839F
MRF839F

5 5

Pin = 0.75W

5
C

^^0.50 W

2
8061 l(Hz^V

^ ^ ^ ).25W~

8701

J 2

Vcc = I" Vdc

960 MHz/

vcc

= 12.5 Vdc

0.8

0.4

800

840

880

Pi, INPUT POWER (WATTS)

920

I, FREQUENCY (MHz)

Rgure 10. Output Power versus Frequency

Rgure 9. Output Power versus Input Power

in = 0.3W
?jn = 0.75W

jo 4

CC = 125Vdc

ITRGUI

**^0.50W
0.25^

65 _
60 *
55

2.0:1

'o-= 8701 lUfa

1.5:1
1.0:1

800

820

840

860

Vcc. SUPPLY VOLTAGE {VOLTS)

f,FREQUENCY (MHzl

Rgure 11. Output Power versus Supply Voltage

Rgure 12. Broadband Performance

- - ZfjL*= Conjugate oftheoptimum load impedance into

whichthedeviceoperatesat a givenoutputpower,i
age, andfrequency.
^v^VX >TZ\ X \ _L-L_l-4-I

Rgure 13. Series Equivalent Input/Output Impedances

MOTOROLA RF DEVICE DATA

2-857

MRF839, MRF839F

|-
VRE
PORT

Ip^ j

-<* 12.5 V
I

SOCKET

-I

CIO

l.l**TN

C3"

RF >-&
W

INPUT

5011

son

IOHK

IZHK

C27- ' C4 ==

C1 47 pF Chip Cap (Murata Erie MA20470BI

C3, C4 13 pF Mini-Underwood
C5 51 pF Chip Cap (ATC 100B510JC500I
C2. C6 0.8-8 pF Johanson ("7291

C7. C12 10 pF. 35 V Electrolytic Capacitor

C8, C11 1000 pF Unolco, J101
C9. C10 91 pF Mini-Underwood

T-Q^
RF
**
OUTPUT

ID.U.T.

LI. L2 4 Turns, #18 Enameled. 5/32' ID

L3. L4 12 Turns. #22 Enameled over 10 Ohm, 1/2 W Carbon Resistor

Z1.Z4 50 Ohm Stripline

Z2 32 Ohm Striplino (14 A in 838 MHz)
Z3 16 Ohm Striplino 11/4 A m 838 MHz)

Board Material 0.032" Glass Tellon. 2 oz. Copper Clad. r 2.55

B Bead. Ferroxcubo #56-590-65'3B

Figure 14. MRF839F 800-880 MHz Broadband Test Circuit

Figure 15. MRF839F Broadband Test Circuit

NOTE: The Printed Circuit Board shown is 75% of the original.

Figure 16. MRF839F Photomaster

MOTOROLA RF DEVICE DATA

2-858

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF840

The RF Line

10 W-870 MHz

RF POWER

TRANSISTOR
NPN SILICON RF POWER TRANSISTOR

NPN SILICON

... designed for 12.5 volt UHF large-signal, common-base am

plifier applications in industrial and commercial FM equipment

operating in the range of 806-960 MHz.
Specified 12.5 Volt, 870 MHz Characteristics
Output Power = 10 Watts
Minimum Gain = 6.0 dB

Efficiency = 50%

Series Equivalent Large-Signal Characterization

internally Matched Input for Broadband Operation
Tested for Load Mismatch Stress at All Phase Angles with 20:1

VSWR @ 15.5 Volt Supply and 50% RF Overdrive

Gold Metallized, Emitter Ballasted for Long Life and Resistance
to Metal Migration
Silicon Nitride Passivated

STYLE 1:

PIN1. BASE(COMMON)
2. EMITTER IINPUTI
3. BASE(COMMON!
4.BASEIC0MM0NI
5. COLLECTOR I0UTPUT)
6. BASE(COMMON!

MAXIMUM RATINGS
Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

4.0

Vdc

3.8

Adc

Rating

Collector Current Continuous

Total Device Dissipation @Tc 2SC (1)

1. DIMENSIONING ANDT01ERANCING PER ANSI

Y14.5M. 1382.
2. CONTROLLING DIMENSION: INCH.

Watts

0.32

w/c

Tstg

-65 to+150

Symbol

Max

Unit

KM
A

MIN
24.52

MAX
25.01

RflJC

3.1

C/W

9.02

952

S.SS

6.60

0
E
f

2.93
2.70

3.17
2.94

H
J

1.91
4.07

2.1S
4.31

0.075
0160

0.11

0.15

2.29

0004
0.110
0.090
0.725 BSC

Derate Above 25C

Storage Temperature Range

NOTES:

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case (2)

MUJM ITERS

0) This device is designed for RF operation. The total device dissipation rating applies
only when the device is operated as an RF amplifier.
12)Thermal Resistance is determined under specified RF operating conditions by infrared
measurement techniques.

I
N
Q

2.79
18.43 BSC
5.72
6.12
3.42
3.18

INCHES
MAX
MIN
0965
0.935
0.355
0.375
0.260
0.230
0125
0.115
0.105

0225

0241

0.125

0.135

CASE 319-06

MOTOROLA RF DEVICE DATA

2-859

0116

0.065
0170
0005

MRF840
ELECTRICAL CHARACTERISTICS (Tc - 2SC unless otherwise noted)
Characteristic

\ Unh |

Symbol

Min

VlBRKXO

Vdc

V(BR)CES

Vdc

VfBRIEBO

4.0

Vdc

Typ

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC - SOmAdc, lfl-0)

Collector-Emitter Breakdown Voltage

(lC "50 mAdc, VBE-0)

Emitter-Base Breakdown Voltage

(lE =5.0 mAdc, lC-0)

Collector Cutoff Current

'CBO

2.0

mAdc

(VCb is vdC 'E 0)

ON CHARACTERISTICS
DC Current Gain

hpE

(lC - 1-0 Adc. Vce " 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

(Vcb -125 vdc, ie - o, f - i.o mhz)

FUNCTIONAL TEST

Common-Base Amplifier Power Gain

GPB

6.0

7.0

<Pout " '0 W, VCc ' ^-B Vdc. f - 870 MHzl

Collector Efficiency

(Pout -10W, VCc " 12.5 Vdc, f = 870 MHz)

Load Mismatch Stress

(Vcc " 15-5 Vdc, Pin - 3.0 W,* f - 870 MHz,

No Degradation in Output Power

VSWR - 20:1, all phase angles)

*Pjn 160% of the typical input power requirement for 10 W output power @ 12.5 Vdc.
FIGURE 1 - 870 MHz TEST CIRCUIT

6-&+-E
i_z_J

CI. CI2 50 pF. 100 Mil Chip Capacitor

C2. C11 15 pF. 20 V Tantalum
C3. C10 1000 pF, 350 V UNELCO
C4. C9 91 pF Mini-Underwood
C5 15 pF
C6 15 pF
C7 15 pF
C8 15 pF

i__.r_i

LI. L6 11 Turns 20 AWG Around 10 O 1 /2 W Resistor

L2. L5 Ferrite Bead
L3. L4 4 Turn 20 AWG 0.2" 1.0.
T1.T4-Zo=50n

T2Zrj =30 n (= X/4 @838 MHz

T3Zo=13.5 n t=X/4@838MHz

L7 18 AWG Wiro Loop

_/"\_ 0.25"

-UP"

MOTOROLA RF DEVICE DATA

2-860

MRF840
FIGURE 3 - OUTPUT POWER versus FREQUENCY

FIGURE 2 - OUTPUT POWER versus INPUT POWER

fj ,-3.0W

.2.01

f-870 MHi

LOW
12.5 V

1.0

1.5

2.0

820

2.5

840

880

t. FREQUENCY(MHt)

P*, INPUT TOWER (WATTS)

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

20
18
p-

n'3.0W ^

16
14

2.0W^-

12
10
1.0 V-

8.0
8.0

4.0
f 870 M Iz

2.0
0

6.0

7.0

8.0

9.0

VCc.SUPPLY VOLTAGE (Vdc)

FIGURE 5 - SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCE

pout10W,Vcc'12.SVdc
zol*
Zin

MHz

800
836
870
SOO

Ohm)

Ohms

2.0 + jS.I
2.0 +J8.2
2.0 +(6.4

3J-J0.4
3.0 -i0.3
2.5+jO.O
2.0 + jOJ

2.0+(6.8
Zgi/ * Cenlasits ol tht optimum lotd
imptdtnc* into which ths dtvict
output optrttn tt s gntn output

powtr, votwot, tnd frequency.

MOTOROLA RF DEVICE DATA

2-861

380

SOO

MRF840

FIGURE 6 - 870 MHz TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-862

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF841
MRF841F

The RF Line

NPN Silicon
RF Power Transistors
SW 870 MHz
RF POWER
TRANSISTORS

... designed primarily for wideband large-signal output and driver stages in the 806-960
MHz frequency range.

Specified 12.5 Volt, 870 MHz Characteristics (a Pout = 5 W

NPN SIUCON

Common Base Gain = 10 dB (Typ)

Efficiency = 65% (Typ)

Internally Matched Input for Broadband Operation
Gold Metallized and Emitter Ballasted for Improved Reliability
100% Tested for Load Mismatch at Rated Input Power and 15.5 V

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

VcEO

Vdc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

VEBO

Vdc

Rating

MRF841

CASE 244-04, STYLE 4

Collector Current Continuous

Adc

Total Device Dissipation (a Tr, = 25"C

Watts

143

mW/C

Tstg

-65 to +150

200

Symbol

Max

Unit

c/w

Symbol

Min

Derate Above 25C

Storage Temperature Range

Operating Junction Temperature

THERMAL CHARACTERISTICS
I

Characteristic

MRF841F

CASE 319-06. STYLE 1

Thermal Resistance, Junction to Case

Rjc

ELECTRICAL CHARACTERISTICS <TC = 25C unless otherwise noted)

Characteristic

Typ

Unit

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage dc = 25 mAdc, Ir = 0)

V(BR)CEO

Collector-Emitter Breakdown Voltage dc = 25 mAdc, Vre = 0)

V(BR)CES

Emitter-Base Breakdown Voltage (Ig = 5 mAdc, Iq = 0)

v(BR)EBO

Collector Cutoff Current (Vqe = 15 Vdc, Vbe = 0)

Ices

Vdc
Vdc
Vdc
1

mAdc

ON CHARACTERISTICS

DC Current Gain dc = 200 mAdc, Vce = 5 Vdc)

hFE

Cob

Gpb

8.5

150

DYNAMIC CHARACTERISTICS

Output Capacitance (Vcb = 15 vdc< 'E = 0, f = 1 MHz)

9.5

FUNCTIONAL TESTS (f = 870 MHz)

Common-Base Amplifier Power,Gain (Vcc = 12-5 Vdc, P0ut = 5 W)

Collector Efficiency (VCc = 12.5 Vdc, Pout = 5W)

Load Mismatch

(Vcc = 15.5 Vdc, Pjn = 710 mW, VSWR = 20:1, all Phase Angles)

MOTOROLA RF DEVICE DATA

2-863

Degradation in Output Power

dB
%

MRF841, MRF841F

o+vcc

L1, L2 4 Turns, #22 AWG Wire, 0.2-inch ID

C1, C12 0.8-8 pF Johanson 7290 Variable

C2 5 pF Mini-Underwood Mica

L3 VK200 Ferroxcube

C3 8.2 pF Mini-Underwood Mica

C4 91 pF Mini-Underwood Mica
C5, C9 680 pF Feedthru

L4, L5 Ferrite Bead, Ferroxcube #56-590-65-3B

Z1 2.36" x 0.145" Microstrip 33 Ohm Line

Z2 0.5" x 0.175" Microstrip 28 Ohm Line
Z3 1.40" x 0.175" Microstrip 28 Ohm Line
Z4 0.40" x 0.175" Microstrip 28 Ohm Line

C6 0.1 t*F Ceramic

C7, C8 10 pF Mini-Underwood Mica

C10 1 /iF Electrolytic
C11 43 pF Mini-Underwood

Board = 0.032" Glass Teflon 2 oz. cu clad er = 2.55

MRF841

Rgure 1. 800-960 MHz Broadband Power Gain Test CircuK

f == 806 Mr

I 8

870-.

nn -

960 *

0.75 W

b
~

.05 WJ
4

-vcc -

*cc

0
0

0.2

0.4

0.6

0.8

1.2

800

1.4

820

840

Pjn. INPUT POWER (WATTS)

860

880

900

(. FREQUENCY (MHz)

920

940

960

Rgure 3. Output Power versus Frequency

Rgure 2. Output Power versus Input Power

Pin = 1W.
8

0.75 W.

0.5W.

70Si

o= 5

_nc_

5 3
870 H

Vtt = 12.5 V
Pin = 710 mW

P 1.5 1

I 2

1.25:1/

60 t

VSWR
0

800

-^10:1
920

840

960

f, FREQUENCY (MHz)

Vcc,SUPPLY VOLTAGE (VOLTSI

Rgure S. Typical Performance in Broadband Circuit

Rgure 4. Power Out versus Supply Voltage

MOTOROLA RF DEVICE DATA

2-864

MRF841, MRF841F

CKT .

Figure 6. MRF841 Broadband Power Gain Test Circuit

Figure 7. MRF841 Test Circuit Photomaster

NOTE: The Printed Circuit Board shown is 75% of the original.

MOTOROLA RF DEVICE DATA

2-865

MRF841, MRF841F

Figure 8. MRF841F Broadband Power Gain Test Circuit

Figure 9. MRF841F Test Circuit Photomaster

NOTE: The Printed Circuit Board shown is 75% of the original.

MOTOROLA RF DEVICE DATA

2-866

MRF841, MRF841F

SHORTING

J [H

PORT X

r-i J

C4 -_.

-L

i 1

==C9
r^
,,-(""0 |! jonnrU-L^

J" I 1x

1-< +12

5 Vdc

I
cu

=?C7

=FC5

son>

C12

C10

Hr-C=D-^5oa

D-lh-C
Z3

=C6

CI, CIO = 47 pF, 100 Mil ATC

C2, C12 = 1 mF 35 WV Tantalum
C3, C11 = 1000 pF Underwood J101
C4, C9 = 91 pF Mini Underwood
C5 = 12 pF Mini-Underwood
C6 = 10 pF Mini-Underwood
C7 = 10 pF Mini-Underwood
C8 = Johansen Giga Trim

D.U.T.

i "

LI, L6 = 11 Turns #20 AWG Over 10 it 1/2 W

L2, L5 = Ferrite Bead, Ferroxcube #56-590-65-3B

L3, L4 = 4T#18AWG, 15" ID

Zl, Z4 = 50 11 Printed Line
Z2 = 30 fl Printed Line, A/4 (<i 838 MHz
Z3 = 24 fl Printed Line. A/4 (< 838 MHz

Board = 0.032" Glass Teflon 2 oz. cu clad tr = 2.55

0.8-8 pF 7290 Variable

NOTES: C7 and C8 mounted - 250 mils

down Z3 from collector edge of board

MRF841F

Figure 10. 800-960 MHz Broadband Power Gain Test Circuit

f = 806IV Hz
12

8
870-

rrr

960

0.75W"
1
05 W

I 4
Yr :

. 3
o? 2

= ir;

Vdc

-vcc

= 12 J Vdc"

|
0

0.2

0.4

0.6

0.8

1.2

1.4

600

820

840

Pjn.INPUT POWER IWATTS)

Rgure 11. Output Power versus Input Power

Pin =

0.75

860
880
900
I. FREQUENCY (MHzl

920

940

960

Rgure 12. Output Power versus Frequency

Ws
Wv

0.5 Wv

70 =

-2L

2 4

602

73
O

= 8 OMr

Pin = 710 rnW

vcc = 12.5 Vdc

%2
o?

as i 5:1

VSWR
0

800

Vcc.SUPPLY VOLTAGE (VOLTS)

Rgure 13. Output Power versus Supply Voltage

840

| 1.25:1 <^
" 1?0:I

880
920
I. FREQUENCY (MHz)

960

Figure 14. Typical Performance in Broadband Circuit

MOTOROLA RF DEVICE DATA

2-867

MRF841, MRF841F

MRF841

MRF841F

Figure 16. Series Equivalent Input/Output Impedances

Rgure 15. Series Equivalent Input/Output Impedances

MOTOROLA RF DEVICE DATA

2-868

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF842

20 W-870 MHz

The RF Line

RF POWER
TRANSISTOR
NPN SILICON

NPN SILICON RF POWER TRANSISTOR

... designed for 12.5 volt UHF large-signal, common-base

amplifier applications in industrial and commercial FM equipment
operating in the range of 806-960 MHz.
Specified 12.5 Volt, 870 MHz Characteristics
Output Power = 20 Watts
Minimum Gain = 6.0 dB

Efficiency = 50%
Series Equivalent Large-Signal Characterization

Internally Matched Input for Broadband Operation

100% Tested for Load Mismatch Stress at All Phase Angles
with 20:1 VSWR @ 15.5 Volt Supply and 50% RF Overdrive
Gold Metallized, Emitter Ballasted for Long Life and
Resistance to Metal Migration
Silicon Nitride Passivated

STYLE1:

PIN I. BASE(COMMON)
2. EMITTER (INPUT)
3 BASE(COMMON)

4. BASE(COMMON)
5 COUECTOR (OUTPUT)
6BASEIC0MMONI

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage

Symbol

Value

Unit

VCEO

Vdc

Collector-Bate Voltage

vCBO

Vdc

Emitter-Bate Voltage

VEBO

4.0

Vdc

Collector Current Continuous

7.6

Adc

Total Device Dissipation @Tc =25C (1)

Watts

0.64

W/C

Tstg

-65 to+150

Derate Above 25C

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case (2)

NOTES:
1. DIMENSIONING ANDT0LERANC1NG PERANSI

YMSM. 1982.
2. CONTROLLING DIMENSION: INCH.

MAX

25.01

0965

9.02

0.355

5.85

9.52
6.60

0985
0375
0.260

293
2.70
1.91

117

0.115

294
2.15

4.07

4.31

0.106
0.075
0.150

0.085
0.170

0.004

0.006

Max

Unit

Rfljc

1.5

C/W

F
H
J

only when the device is operated as an RF amplifier.

(2| Thermal Resistance is determined under specified RF operating conditions by infrared

measurement techniques.

INCIKES
ICN

24 S2

Symbol

(1) This device is designed for RF operation. The total device dissipation rating applies

MIUIMETEBS
MAX
KN

K
L
N

0.15
0.11
279
2.79
tB.42 BSC
5.72
6.12
118
1*2

0.230

0.090
0.110
0.725 BSC
0241
0.225
0.125

CASE 319-06

MOTOROLA RF DEVICE DATA

2-869

0.125
0.116

0.135

MRF842

ELECTRICAL CHARACTERISTICS <TC - 25Cunless otherwise noted)

Characteristic

Symbol

Min

V(BR)CE0

V(BR)CES

V(BR)EBO

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

4.0

Vdc

IIC - 50 mAdc, Ie - 0)
Collector-Emitter Breakdown Voltage

Vdc

(IC = 50mAdc. VBE -0)

Emitter-Base Breakdown Voltage

Vdc

(ls== 10 mAdc, lc-0)

Collector Cutoff Current

'CBO

5.0

mAdc

IVCB 15 Vdc. l - 0)
ON CHARACTERISTICS
DC Current Gain

hFE

(lC - 2.0 Adc. VCE 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

C0b

(Vcb " 12.5 Vdc, lE = 0, f 1.0 MHzl

FUNCTIONAL TEST

Common-Base Amplifier Power Gain

GPB

6.0

7.0

(Pout " 20 w. VCC" 12-5 Vdc-' " 870 MHz>

Collector Efficiency

(Pout " 20 W, VCc '25 Vdc, f - 870 MHz)

Load Mismatch Stress

(Vcc " 15.5 Vdc, Pj* - 6.0 W, f - 870 MHz,

No Degradation in Output Power

VSWR 20:1, all phase angles)

*Pjn = 150% of the typical input power requirement for 20 W output power <s> 12.5 Vdc.
FIGURE 1 870 MHz TEST CIRCUIT SCHEMATIC

4=C4
VRE
Port

C2 iji 4=C3

cioi
"

TL1

I r-^VVV

C12=fc

>-er*=33-11-

CI, C11 51 pF, 100 Mil Chip Capacitor

C2, C13 15 uF, 20 WV Tantalum
C3, C12 1000 pF Unelco J101
C4, CIO 91 pF Mini-Underwood
C5 15 pF Mini-Underwood
C6 12 pF Mini-Underwood
C7, C8 21 pF Mini-Underwood
C9 11 pF Mini-Underwood

LI, L4 11 Turns #20 AWG Over 10 ohm 1/2 W Carbon

L2, L3 4 Turns #20 AWG, 200 Mil ID
B Ferrite Bead. Ferroxcube 56-590-65-3B

TL1, TL4 Micro Strip, Z0 = 50 ft

TL2 Micro Strip, Zq = 38 ft. A/4@ 838 MHz

TL3 Micro Strip. Zq = 24 ft, A/4@ 838 MHz
Board 0.032" Glass Teflon

2 oz. Cu CLAD, er = 2.55

MOTOROLA RF DEVICE DATA

2-870

5ft:C13

MRF842
FIGURE 2 -

OUTPUT POWER versus INPUT POWER

FIGURE 3 -

OUTPUT POWER versus FREQUENCY

Pin" 8.0 W

24
22

t;
7>

vr ;-12.S

4.0 W-

18
16

f- 170 MH t

2.0 W-

12
10

2.5

3.0

3.5

4.0

4.5

5.0

5.5

Vcc 125 V

ao
800

6.0

840

820

8S0

f. FREQUENCY (MHt)

Pin. INPUT POWER (WATTS)

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE
40

Pin" i.0 W

*^jiii

?C1

H*
15

3
O

to
5.0
1-870 MHr
I

8.0

9.0

Vcc. SUPPLY VOLTAGE (VOLTSI

FIGURE 5 - SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCE

pout -'20W.Vcc"12.5Vdc
Zin
ZOL*

MHz

Ohms

800
836
870
SOO

I.I+ (4.1
1.2 +J4J
1.4 +J4.4

1.9+J1.5
1.85 + jl.S
1.8 +11.7
1.8+J1.8

1.6 +J4.5
Zql* Conjujiw of thi optimum lotd
imptdtrtts into which thi dtvit*
output opcratasat a givin output
powtr, voltag*.and frequency.

MOTOROLA RF DEVICE DATA

2-871

MRF842

FIGURE 6 - 870 MHz TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-872

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF844

30 W-870 MHz

The RF Line

RF POWER
TRANSISTOR
NPN SILICON

NPN SILICON RF POWER TRANSISTOR

... designed for 12.5 volt UHF large-signal, common-base am

plifier applications in industrial and commercial FM equipment
operating in the range of 806-960 MHz.

Specified 12.5 Volt, 870 MHz Characteristics

Output Power = 30 Watts
Minimum Gain = 5.2 dB

Efficiency = 50%

Series Equivalent Large-Signal Characterization

Internally Matched Input for Broadband Operation
Tested for Load Mismatch Stress at All Phase Angles with 20:1
VSWR @ High Line and RF Overdrive
Gold Metallized, Emitter Ballasted for Long Life and Resistance
to Metal Migration

r-l
i

Iam [Timm |i|l9>l

Hj7lannuse |t|<S>|>l

"Eg;

Silicon Nitride Passivated

STYUI:

FIN1. BASE(COMMON!
2. EMITTER (INPUT)
3. BASE(COMMON)
4. BASE(COMMON)
5. COUECTOR (OUTPUT)
6.BASEIC0MM0NI

#
#

MAXIMUM RATINGS
Symbol

Valut

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VebO

4.0

Vdc

Collector Current Continuous

10.9

Adc

Total DeviceDissipation @Tc " 25C (1)

115

Watts

0.66

W/C

Tstg

-65 to +150

Rating

Derate Above 2SC

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case (2)

Symbol

Max

Unit

RflJC

1.5

C/W

(1) This device is designed for RFoperation. The total device dissipation rating applies
only when the device is operated as an RF amplifier.

(2) Thermal Resistance is determined under specified RF operating conditions by infrared

measurement techniques.

N0TS:
1. DIMENSIONINGAN0 T0LERANCING PERANSI
YI4.5M. 1982.
2. C0NTR0UWG DIMENSION: INCH.

DOM
A
B

?
0
E
F
H
J

MtUJMCTERS
MAX

0.965

9.52

0.355

0375

6.50
117

(U30
0.115

0260
0.125

2.70

2.94

0.106

1.91
4.07

0.075
0.160
0.004
0.090
0.725
0225
0125

0.116
0.085

229

2.79

18.42 BSC
5.72
6.12
3.42
3.19

CASE 319-06

MOTOROLA RF DEVICE DATA

2-873

MAX

JS.01

215
441
0.15

N
a

moKES
MW

24.52
9.02
585
233

0.170
0X06
0.110

BSC
0241

0.135

MRF844
ELECTRICAL CHARACTERISTICS (Tc - 25Cunless otherwise noted)
Typ

Symbol

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

V(8R)CES

Vdc

V(BH)EBO

4.0

Vdc

(lC SOmAdc, Ir - 0)
Collector-Emitter Breakdown Voltage

(lC 50 mAdc. VBE 0)

Emitter-Base Breakdown Voltage

(l-10 mAdc. lc0)

Collector Cutoff Current

'CBO

mAdc

(VCB 15 Vdc, Ie 01
ON CHARACTERISTICS
40

hFE

DC Current Gain

(lC " 2.0 Adc, VCe - 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Cot,

Output Capacitance

(Vcb " 123 Vdc, Ie - 0. f = 1.0 MHi)

FUNCTIONAL TEST

Common-Base Amplifier Power Gain

GPB

5.2

6.0

(Pout - 30 W. VCc - 125 Vdc, f - 870 MHz)

Collector Efficiency

(Pout " 30 W. Vcc * 12-5 Vdc-f " 87 MHzl

Load Mismatch Stress

(VCc "15.5 Vdc, Pjn 12W\f -870 MHz,

No Degradation in Output Power

VSWR 20:1, all phase angles)

*Pjn * 150% of the typical input power requirement for 30 W output power @> 12.5 Vdc.

FIGURE 1 - 870 MHz TEST CIRCUIT

sL~
C9it

itC4

Shorting I"0
Plug I

lnrrUi
1 t Lfr^J^S~

C2^ 4:C3

L2 I j

_^7lUrUj

-JL- r i i

C7
C12

Input

e-^H

\=s

i_3_J
C1.C12 50pF. 100 Mil Chip Capacitor
C2. C11 15 pF. 20 V Tantalum
C3. C10 1000 pF. 350 V UNELCO
C4. C9 91 pF Mini-Underwood
C5 15 pF Mini-Underwood
C6 15 pF Mini-Underwood
C7 18 pF Mini-Underwood
C8 24 pF Mini-Underwood

L1. L6 11 Turns 20 AWG Around 10 O1/2 W Resistor

L2. L5 Ferrite Bead
L3. L4 4 Turn 20 AWG 0.2" I.D.

T1.T4Zo=50n

T2- Zrj =38 n t=K/4@838MHz

T3Zq=26 O r*= A/4 @838 MHz

MOTOROLA RF DEVICE DATA

2-874

Output

MRF844

FIGURE 3 -

FIGURE 2 - OUTPUT POWER versus INPUT POWER

OUTPUT POWER versus :REQUENCY

50
vi

40
<

8.0W

30
Ck

8)0 MHi

v'cc

'2 5 V

I a

0 1

j 0

6 0

vcc I2-5V
820

I FREQUENCY (MH;

P. INPUTPOWER (WATtSI

FIGURE 4 - OUTPUT POWER versus SUPPLY VOLTAGE

'',..

810

FIGURE 5 - SERIES EOUIVALENT INPUT/OUTPUT IMPEDANCE

12 W

3
30
4 OW

5.
...

3
a.

870 MH/

0
80

VCC. SUPPLY VOLTAGE (VOLTSI

FIGURE 6 870 MHz TEST CIRCUIT

Pin= 7.5W.POUI =30W,VCC=12.5V(lc

Zin

Zol'

Ohms

800

0.8 + J3.7

836

0.9+J4.0
1.0 + J4.4
1.0 + J4.7

1.4 + J2.3
1.3+J2.4
1.25 + J2.6
1.2 + J2.7

870
900

Zql* = Conjugate ol the optimum load

impedance into which ihe device

output operates at a given output

power, voltage, and frequency.

MOTOROLA RF DEVICE DATA

2-875

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF846

40W-870MHZ

The RF Line
RF POWER
TRANSISTOR
NPN SILICON

NPN SILICON RF POWER TRANSISTOR

... designed for 12.5 volt UHF large-signal, common-base am

plifier applications in industrial and commercial FM equipment
operating in the range of 806-960 MHz.
Specified 12.5 Volt, 870 MHz Characteristics
Output Power = 40 Watts
Minimum Gain -

4.3 dB

Efficiency = 50%

Series Equivalent Large-Signal Characterization

Internally Matched Input for Broadband Operation
Tested for Load Mismatch Stress at All Phase Angles with 10:1
VSWR @ High Line and RF Overdrive
Gold Metallized, Emitter Ballasted for Long Life and Resistance
to Metal Migration

-l
JJ4-1IDm [Tijtnein
_______
|T|i|iig>|

Silicon Nitride Passivated

li|iawi8 |l|e||

I? !

?
_DST

STYIE1:

PIN1. BASE ICOKM0NI

2. EMITTER IWPUT)
3.BASEIC0MM0NI
4 BASE (C0VU0NI
srmEaoRtouTPvm
6 BASE(COMMON!

NOTES:
1. DIMENSIONING AND TOtERANCING PERANSI
Y14.SM. 1982.
2. CONTROLLINGDIMENSION: INCH

MAXIMUM RATINGS
Symbol

Value
16

Vdc

Collector-Base Voltage

VCEO
VCBO

Vdc

Emitter-Base Voltage

vEBO

4j0

Vdc

Rating
Collector-Emitter Voltage

Collector Current Continuous

14.0

Total Device Dissipation Tq - 25C (1)

150
06

Derate Above 25C

Storage Temperature Range

Thermal Resistance, Junction to Case (2)

Adc
Watts

W/C

DM
A

Tstg ..

THERMAL CHARACTERISTICS
Characteristic

Unit

-65 to+150

MUJMETERS
MAX

MN
2452

B
C
D

9.02
585

2.70

233

2*01
?S
w
317
2.94

noKES
MAX
MIN
0585
0365
0J55
0.375
0.260
0.230
0.125
0.115
0116
0.106
0075
0.035
0.170
0.160

Symbol

Max

Unit

E
F

Rejc

1.17

C/W

1.91
4.07

0.11

0.004

572 1 6.12
3.18 1 142

O090
0.725
0.225
0.125

X
L
N

MS
441
0.15
2.29
2.79
18.42 BSC

measurement techniques.
CASE 319-06

MOTOROLA RF DEVICE DATA

2-876

0.006
O110

BSC
0.241
0.13S

MRF846

ELECTRICAL CHARACTERISTICS <TC 25Cunless otherwise noted)

Unit

Max

Typ

Symbol

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

V(BR)CEO

V(BR)CES

V(BR)EB0

4.0

llC " 50 mAdc. Ib 0)

Collector-Emitter Breakdown Voltage

Vdc

(lC " 50 mAdc. VgE 01

Emitter-Bate Breakdown Voltage

Vdc

(IE- 10 mAdc. lc-0)

Collector Cutoff Current

CBO

mAdc

(Vcb- is vdc, i -oi

ON CHARACTERISTICS
DC Current Gain

"FE

(lC - 2.0 Adc, VCe 5.0 Vdc)

DYNAMIC CHARACTERISTICS

C0b

Output Capacitance

IVcb-12.5 Vdc. lE"0.f= 1.0 MHzl

FUNCTIONAL TEST

Common-Base Amplifier Power Gain

Gpb

4.3

5.2

(Pout " 40 W, Vcc " 12S Vdc.' " 870 MHzJ

Collector Efficiency

(Pout " 40 w- VCC " 12-5 Vdc<f " 87 MHzl

Load Mismatch Stress

No Degradation in Output Power

(Vcc " 15.5 Vdc, Pjn - 15 W, f - 870 MHz,

VSWR - 10:1, all phase angles)

*Pj - 125% of the typical input power requirement for 40 W output power @ 12.5 Vdc.

FIGURE 1 870 MHz TEST CIRCUIT SCHEMATIC

cui

ci2ici3*:

TL3 MWtlTI

C1 43
C2 12
C3 15
C4 21
C518

pF, 100 Mil Chip Capacitor

pF Mini-Unelco
pF Mini-Unelco
pF Mini-Unelco
pF Mini-Unelco

C6 0.8-8.0 pF Johanson Gigatrim

C7 47 pF. 100 Mil Chip Capacitor
C8 10aiF,25VW
C9, C12 1000 pF Unelco J101
CIO. C11 91 pF Mini-Unelco
C13 25 /iF. 25 WV

L1, L2 4 Turns #18 Enameled; 200 Mil ID

L3, L4 15 Tums #24 Enameled Over 12 ohm Carbon Resistor
B Ferrite Bead; Ferroxcube 56-590-65-3B

TL1, TL4 Micro Strip; 50 O

TL2 Micro Strip; Zq = 341%A/4@ 838 MHz

TL3 Micro Strip; Zq = 30 O, A/4 @ 838 MHz
Board 0.032* Glass Teflon

2 oz. Cu CLAD, er = 2.55

MOTOROLA RF DEVICE DATA

2-877

MRF846
FIGURE 2 - OUTPUT POWER versus INPUT POWER

FIGURE 3 - OUTPUT POWER versus FREQUENCY

P(n =l5W
35

<_ I0W

/
20

Vcc = 12.5V

"**

10
10

4.0

8.0

800

820

840

Pin. INPUTPOWER IWATTSI

FIGURE 4 -

OUTPUT POWER vorsus SUPPLY VOLTAGE

1
Pta I5W

10 W
-

^
5W

6.0

860

I. FREQUENCY (MHr)

8.0

VCC. SUPPLY VOLTAGE IVOLTSI

FIGURE 5 870 MHz TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-878

880

900

MRF846

RGURE 6 SERIES EQUIVALENT INPUT IMPEDANCES

Vcc12.5Vdc,P:n = 12W
f

Zin

MHz

Ohms

800
836
870
900

1.1+J4.8
1.0 + J4.9
1.0 + J5.0
0.9+J5.1

RGURE 7 SERIES EQUIVALENT OUTPUT IMPEDANCES

VCc-12.5 Vdc, Pout -40W

zol*

MHz

Ohms

800
836
870
900

1.2 + J2.4
1.15 + J2.5
1.1+J2.7
1.1+12.8

Zol* Conjugate of the optimum load

impedance into which the device
output operates at a givenoutput
power, voltage, and frequency.

MOTOROLA RF DEVICE DATA

2-879

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF847

The RF Line

NPN Silicon
RF Power Transistor
45 WATTS, 870 MHz

... designed for 12.5 volt UHFlarge-signal common-base amplifier applications in indus
trial and commercial FMequipment operating in the range of 806-960 MHz.

RF POWER
TRANSISTOR
NPN SIUCON

Specified 12.5 Volt, 870 MHz Characteristics

Output Power = 45 Watts
Minimum Gain = 4.5 dB

Efficiency = 60%

Series Equivalent Large-Signal Characterization

Internally Matched Input for Broadband Operation
Tested for Load Mismatch Stress at all Phase Angles with 10:1 VSWR@ High Line
and Rated Drive

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
Silicon Nitride Passivated

CASE 319-06

MAXIMUM RATINGS

Rating

Symbol

Value

Unh

Collector-Emitter Voltage

VceO

16.5

Vdc

Collector-Base Voltage

VcbO

Vdc

Emitter-Base Voltage

VBO

Vdc

Collector-Current Continuous

Adc

Total Device Dissipation Ta = 25C

150

Watts

0.85

W/C

Derate above 25C

Storage Temperature Range

Junction Temperature

Tstg

-65 to +150

200

1.17

C/W

Typ

Max

Unit

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (Tc = 25Cunless otherwise noted)

Symbol

Characteristic

Min

OFF CHARACTERISTICS

Emitter-Base Breakdown Voltage (If: = 5 mAdc, lc = 0)

V(BR)EBO

Collector-Emitter Breakdown Voltage dc = 50 mAdc, Ib = 0)

V(BR)CEO

16.5

Collector-Emitter Breakdown Voltage dc = 50 mAdc, Vbe = *

V(BR)CES

Collector Cutoff Current (Vce = 15 Vdc, Vbe = 0)

'CES

Vdc

120

Vdc
Vdc

mAdc

ON CHARACTERISTICS

DC Current G8in dc = 2 Adc, Vce = 5 Vdc)

hFE

DYNAMIC CHARACTERISTICS

Output Capacitance (Vcb = 12.5 Vdc, lg = 0, f = 1 MHz)

Cob

MOTOROLA RF DEVICE DATA

2-880

MRF847

ELECTRICAL CHARACTERISTICS continued (Tc = 25C unless otherwise noted)

Characteristic

Max

Symbol

Min

Typ

Gpe

4.5

5.5

Unit

FUNCTIONAL TESTS

Common-Base Amplifier Power Gain

(VCC = 12.5 Vdc, Pout = 45 W, f = 870 MHz)

Collector Efficiency

fVCC = 12.5 Vdc, Pcut = 45 W, f = 870 MHz)

Load Mismatch

No Degradation In Output Power

(VCC = 15.6 Vdc, Pin = 16 W. f = 870 MHz,

VSWR = 10:1 All Phase Angles)

r-^vW

I | W\ 1|

1 I

j | !InnrY^M-ci_7
VP0RT

C8 ikies
^>

d,ll+.
C12=^= ^C13

C11

C10

i tu

johHZ_l__

Hr"C_0 Q On

-t

CI = 51 pF, 100 mil Chip Capacitor

C2 = 12 pF, Mini-Underwood
C3 = 11 pF, Mini-Underwood
C4, C5 = 21 pF, Mini-Underwood
C6 = 0.08-8.0 pF Johansen Gigatrim
C7 = 47 pF, 100 mil Chip Capacitor
C8. C13 = 10 uF, 25 WV Electrolytic Capacitor
C9, C12 = 1000 pF Unelco J101

C10, C11 =91 pF Mini-Underwood

LI, L2 = 4 Turns #18 Enameled. 200 mil ID
L3, L4 = 12 Tums #22 Enameled, Wound Over 10 fl Resistor

TL1, TL4 = 50 fl Microstrip Line

TL2 = Microstrip (Z0 = 38 ohms, A/4 @ 838 MHz)

TL3 = Microstrip (Zq = 28 ohms, A/4@ 838 MHz)

Board Material - 0.032" Glass-Teflon, 2 oz. cu. clad, <r = 2.56
B - Ferrite Bead, Ferroxcube 56-590-65-3B

Figure 1. 806-870 MHz Broadband Test Circuit

MOTOROLA RF DEVICE DATA

2-881

MRF847

vo : =

f = 806 MHi

870Mto^

5> 60

Vcc = 12-5V

.^^

960 MHz^^.

40
w

Jin - 16W

| 30

v^= 12 vT^"

| 40

j=8W

3
o? 30

800820840860830900

Pin. INPUT POWER (WATTSI

920

-J

340

960

f, FREQUENCY (MHz)

Rgure 3. Output Power versus Frequency

Rgure 2. Output Power versus Input Power

f == 870li Hi

"Opfl"
Pin =

16 W>

5.5

= 12Wv,

i4-5

| 40

s=8

60|

50 _

3.5

= 12. V
= 16W 1

40g
1.6:1
30

2.5
20

1.4:1

INPHTVSWfl

10
10

12:1

1,5
800

860

900

Vcc, SUPPLY VOLTAGE (VOLTSI

f, FREQUENCY (MHz)

Rgure 4. Output Power versus Supply Voltage

Rgure 5. Typical Broadband Circuit Performance

Vqc = t2.5Vdc.Pin =
f
MHi

Zin
(Ohms)

16W.P out = 45W

f
MH*

zol"
(Ohms)

806

0.99

+J5.52

806

0.67

+J1.33

838

1.48

+J5.47

838

0.68

+J1.66

870

1.79

+ J5.25

870

0.72

+J2.16

915

2.12

+J4.80

915

0.83

+J2.40

960
2.11
059
+J2.50
+ J4.28 960
ZQL CoRJugjta oltheoptimum load cnpedenoe intowhich

the device outputoperate* at a jivenoutputpower,

voltage, tnd frequency.

Rgure 6. Series Equivalent Input/Output Impedances

MOTOROLA RF DEVICE DATA

2-882

MOTOROLA
SEMICONDUCTOR ^ ^ ^ ^ " ^ ^ ^
TECHNICAL DATA

MRF873
MRF873S

The RF Line

NPN Silicon
RF Power Transistors
... designed for 12.5 Volt UHF large-signal, common-emitter applications in industrial
and commercial FM equipment operating in the range of 806-960 MHz.

15 W

806-360 MHz
RF POWER
TRANSISTORS
COMMON-EMITTER

Specified 12.5 Volt, 870 MHz Characteristics

Output Power =15 Watts
Minimum Gain = 7 dB

Efficiency = 60%
Internally Matched Input for Broadband Operation
Series Equivalent Large-Signal Characterization
Capable of withstanding 20:1 VSWR Load Mismatch at Rated Input Power and

NPN SILICON

15.5 Vdc

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
Silicon Nitride Passivated
MAXIMUM RATINGS

Rating

Symbol

Value

UnH

Collector-Emitter Voltage

Vceo

16.5

Vdc

Collector-Emitter Voltage

VcES

Vdc

Emitter-Base Voltage

VEBO

Vdc

2.4

Adc

200

0.25

Watts
VWC

Tstg

-65 to +150

Collector-Current Continuous

| Operating Junction Temperature

l Total Device Dissipation @ T^ = 25C(1)

Derate above 25C

CASE 319-06, STYLE 2

CASE 319A-02, STYLE 2

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

RflJC

T/W

Typ

Max

Unit

Thermal Resistance, Junction to Case (2)

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwisenoted.)

Characteristic

Symbol

Min

V(BR)CEO

16.5

V(BR|CES

V(BR)EBO

OFF CHARACTERISTICS

| Collector-Emitter Breakdown Voltage (Iq = 20 mAdc, Ib =0)

Collector-Emitter Breakdown Voltage (lc = 20 mAdc, Vbe = >

[ Emitter-Base Breakdown Voltage (Icj =5mAdc, lc =0)

1Collector Cutoff Current (Vce = 15 Vdc, Vbe =< TC =25C)

'CES

Vdc
Vdc

Vdc
5

mAdc

ON CHARACTERISTICS

DCCurrent Gain (lc = 1 Adc, Vce = 5 Vdc)

hFE

200

DYNAMIC CHARACTERISTICS

Output Capacitance (Vcb = 12.5 Vdc, Ie = 0, f = 1 MHz)

Cob

(1)This device is designed for RFoperation.The total device dissipation rating appliesonly when the deviceis
operated as an RF amplifier.

(2)Thermal Resistance is determined underspecified RF operating conditions by infrared measurement techniques.

MOTOROLA RF DEVICE DATA

2-883

19.5

PF
(continued)

MRF873, MRF873S
ELECTRICAL CHARACTERISTICS continued (Tc = 25C unless otherwisenoted.)
Characteristic

Symbol

Min

Typ

Gpe

Max

Unit

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain (Broadband)

(Vcc = I2-5 Vdc. P0ut = 15 W, f = 870 MHz)

Collector Efficiency

(Vcc = 12-5 Vdc, Pout = 15 W, f = 870 MHz)

Load Mismatch Stress

No degradation in

(VCc = 15.5 Vdc, f = 870 MHz, Pjn = 3 W,

output power

VSWR = 20:1, all phase angles)

SHORTING

PLUG

AVrE PORT

'-{_>-v^X^-<'SJ
ci4=j= ;*-ci5_o
- - 4-GND
RF

v-e-n_Hr-E_>

O.U.T.

=J=C8

C6=J=

CI. C15 10 pF. 25 V Tantalum

j
*

1c!21
*-^

1 r\ 0UTPUT
*** RL = 50O

L1 13 Turn #20 AWG Around 10 O 1/2 W Resistor

12, L5 Ferroxcube Bead #56-590-65-3B
L3, L4 4 Turns #20 AWG Choke ID O.r

C2. C14 1000 pF. 350 V Unelco

C3. C12 43 pF, 100 Mil ATC Chip Capacitor
C5. C13 91 pF, Mini-Unelco

L6 6 Turns #20 AWG Choke ID 0.2 "

C4, C11 0.8-8 pF Johansen Gigatrim 7290 Variable

21, Z4 50 Ohm Microstrip

_ 36 Ohm Microstrip A/4 (u 838 MHz
Z3 26 Ohm Microstrip A/4 (<t 838 MHz

08 16 pF Mini-Underwood
C7.C8.C9 12 pF Mini-Underwood
C10 10 pF Mini-Underwood

Board Material 0.032"Glass Teflon 2 oz. Copper Clad tr = 2.55

NOTE: C11 - 0.4" down Z3 from socket edge.

Rgure 1. 806-SOO MHz Broadband Test Rxture

1
806 MHz

j/> 22
g 20

| 18
2

1>*

__,nn

-^
IffO IrlHz

360 KHt

|
2

2 14

2. 12

73
O

J 10
3

J 8

vcc

-3W

(5 16

vcc

800

Pin,INPUT POWER (WATTS)

840

880

920

f, FREQUENCY (MHz)

Rgure 2. Output Power versus Input Power

Rgure 3. Output Power versus Frequency

MOTOROLA RF DEVICE DATA

2-884

MRF873, MRF873S

-Poul

= 2

80%

lc>

10
vcr

I 8

= 1W

= 12.

Pin =

Vdc

J 4
"

?n-i

INPUT VSWR

2
n

820

Vcc.SUPPLY VOLTAGE IVOLTSI

840

f, FREQUENCY (MHz)

Figure 5. Typical Performance in Broadband

Test Fixture

Figure 6. Photo Test Circuit

Figure 7. Photomaster

NOTE: The Printed Circuit Board shown is 75% of the original.

MOTOROLA RF DEVICE DATA

2-885

1.5:1
1.0:1

Figure 4. Output Power versus Supply Voltage

50%

MRF873, MRF873S

Rgure 8. Series Equivalent Input/Output Impedances

MOTOROLA RF DEVICE DATA

2-886

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF890

The RF Line
2.0 W

900 MHz

RF POWER
TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
NPN SILICON

... designed for 24 volt UHF large-signal, common-emitter amplifier

applications in industrial and commercial FM equipment operating
in the range of 804 - 960 MHz.
Specified 24 Volt, 900 MHz Characteristics
Output Power = 2.0 Watts
Minimum Gain = 9.0 dB

Efficiency = 55%

Series Equivalent Large-Signal Characterization

Capable of 30:1 VSWR Load Mismatch at Rated Output Power
and Supply Voltage

Gold Metallized, Emitter Ballasted for Long Life and Resistance to

Metal Migration

Silicon Nitride Passivated

K/
w

6=M
Li

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VcflO

Vdc

Emitter-Base Voltage

VEB0

4.0

Vdc

Collector Current Continuous

0.5

Adc

Total Device Dissipation @ Tq = 2SC (1)

7.0

Watts

mW/oc

Tstg

-65 to+150

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case (2)

R0JC

C/W

Derate Above 25C

Storage Temperature Range

v nl

THERMAL CHARACTERISTICS

STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COUECTOR

(1}This device is designed for RF operation. The total device dissipation rating applies
only when the device is operated as an RF amplifier.

(2) Thermal Resistance is determined under specified RF operating conditions by infrared

measurement techniques.

T
KMMSrUKf

C
D
E
F
J

KUaiETERS
MAX
559
16.26

1.40
m
064

0040

0050

033

0025

0035

0.08

0.18

0003

0.007

1105

I
M

140

S
T
U
V

IN0 KES
Km
MAX
0.220
OJOO
0.550
0640
0.065
0.055

MIN
508
1357

1.65

45' NOM
1.27

1.40
1.40

2.79
241

165
1.78
381
2.92

0435

0055
0.055
0110
0095

CASE 305-01

MOTOROLA RF DEVICE DATA

2-887

0055
0065
45 NOM
0050

O065
0.070

0.150
0.115

MRF890

ELECTRICAL CHARACTERISTICS (Tc=25Cunlessotherwise noted)

Symbol

Min

Collector-Emitter Breakdown Voltage

dc =5.0 mAdc. la =0)

v(BR)CEO

Vdc

Collector-Emitter Breakdown Voltage

dC = 5.0 mAdc, Vbe = 0)

V(BR)CES

Vdc

Emitter-Base Breakdown Voltage

V(BR)EBO

4.0

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS

Vdc

(IE= 5.0 mAdc. lc = 0)

Collector Cutoff Current

'CBO

(VCB= 30Vdc, l = 0)

0.5

mAdc

ON CHARACTERISTICS
DC Current Gain

"FE

100

dC = 100 mAdc, VCe = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

2.0

(VCB= 30 Vdc, Ie = 0, f = 1.0 MHz)

FUNCTIONAL TEST

Common-Emitter Amplifier Power Gain

Gpe

9.0

10.5

(Pout = 2.0 W, VCc = 24 We- f = 90 MH*>

Collector Efficiency

(Pout = 20 W. VCc = 24 Vdc- f = 900 MHz)

FIGURE 1 -

860 - 900 MHz TEST CIRCUIT

1 ~ZL,CS

-<p-__S!i J_ __ *
c9>*T j?-

_DT

RF Input

CI. C7 Johanson 0.5 - 4.0 pF Giga-Trim

C2, C5, C6 91 pF Mini Underwood Mica
C3, C9 I.OpF Electrolytic
C4. C8 250 pF Unelco
CIO 39 pF Mini Underwood
LI, L7 10 Turns Around 10 O 1 /2 W Resistor
L2, L3, LB Ferrite Bead
L4, L6 4 Turns 26 AWG 0.1 * ID

Zl, Z2, Z3, Z4. Z5, Z6 Distributed Microstrip Elements (see photomask)
Board Material Glass Teflon <r = 2.551 = 0.031"

MOTOROLA RF DEVICE DATA

2-888

VCC= 24 V

MRF890

FIGURE 3 - OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 2 - OUTPUT POWER versus INPUT POWER

4.0

3.0

SOO MHt"

2.S

Pin=300mW_.

"^""seOMHi

2.0

= 200raW
2.0

= 100 mW

1.0

Vcc = 24 V

100

200

300

Vcc.SUPPLY VOLTAGE (V)

Pin. INPUT POWEH (mW)

FIGURE 4 -

SOO MHt

FIGURE 5 - TYPICAL PERFORMANCE IN

BROADBAND CIRCUIT

OUTPUT POWER versus FREQUENCY

3.0

-Gpf.
Pin= 300

2.5

i
---

.-"

!C0m\

l"^

--_

~2:1>

60 i

~*"

1 8.0

1.8:1

1 1.6:1

.Vcc = 24 V

6.0

"|
8S0

1.4:1
-1.2:1 20

100 mVIf

1:1

875

900

925

850

950

860

f. FREQUENCY (MHt)

FIGURE 6 -

In, irtVSVffl

VCc = 24 V

1.0

870
880.
I. FREQUENCY (MHz)

890

900

FIGURE 7 - SERIES EQUIVALENT

OUTPUT IMPEDANCE

SERIES EQUIVALENT INPUT IMPEDANCE

ZQl' CoRjugite oftheoptimuni load impedance into which thadavica output opanta
ata Bjvan outputpowtr,voftaja. tnd frsqutncy.

MOTOROLA RF DEVICE DATA

2-889

MRF890

FIGURE 8 PHOTOMASTER FOR TEST FIXTURE

NOTE: The Printed Circuit Board shown is 75% of the original.

FIGURE 9 -

850-900 MHz TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-890

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF891

The RF Line

S.0W

900 MHz

RF POWER
TRANSISTOR
NPN SILICON RF POWER TRANSISTOR

NPN SIUCON

... designed for 24 volt UHF large-signal, common-emitter am

plifier applications in industrial and commercial FM equipment
operating in the range of 800-860 MHz.
Specified 24 Volt, 900 MHz Characteristics
Output Power = 5.0 Watts
Minimum Gain = 9.0 dB

Efficiency = 50%

Series Equivalent Large-Signal Characterization

Capable of withstanding 20:1 VSWR Load Mismatch at Rated
Output Power and Supply Voltage
Gold Metallized, Emitter Ballasted for Long Life and
Resistance to Metal Migration
Silicon Nitride Passivated

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Emitter Voltage

VCES

Vdc

Emitter-Base Voltage

vEbo

4.0

Vdc

0.6

Adc

| Collector-Current Continuous
Total Device Dissipation @ Ta = 50C

Derateabove 50*C

Watts

0.143

WVC

Tsta

-65 to +160

Symbol

Max

Unit

RJC

7.0

(1)

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

(2)

STYLE 2:
PIN 1. EMITTER(COMMON)
2. BASE [INPUT!

3. EMITTER(COMMON!
4. EMITTER (COMMON)
5 COUECTOR (OUTPUT)
G. EMITTER(COMMON)

NOTES:
1. DIMENSIONINGAND TOLERANCING PER ANSI
Y14.5M. 1932.
2. CONTROLLINGDIMENSION: INCH.

(l)This device is designed for RF operation. The total device dissipation rating applies
only when the device is operated as an RF amplifier.
(2) Thermal Resistance is determined under specified RF operating conditions by infrared
measurement techniques.

DM
A
B
C

MttUMETERS
m
MAX
2452
25.01
9.02
5.85

9.52
6.60

moHES
MIN
MAX
0965
0965
0.355
0375
0.260
0.230
0125
0115

2-93
2.70

317
2.94

0.106

1.91
4.07

2.15
4.31

0.075

0.065

0160

0170

0.11

K
L

2.29

E
F

N
0

015
2.79
18.42 BSC
5.72
6.12

318

342

0004
0090
0.725
0225
0.125

CASE 319-06

MOTOROLA RF DEVICE DATA

2-891

0.116

0006
0.110
BSC
0241
0.135

MRF891

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.)

Typ

Symbol

Min

Collector-Emitter Breakdown Voltage

(lC = 20 mAdc, Iq = 0)

V(BR)CEO

Collector-Emitter Breakdown Voltage

(lC = 20 mAdc, VBe = o)

V(BR)CES

Emitter-Base Breakdown Voltage

dE = 0.5 mAdc. lc = 0)

V(BR)EBO

4.0

Characteristic

Max

Unit

OFF CHARACTERISTICS

Collector Cutoff Current

>CES

Vdc

1.0

mAdc

(VCE = 30 Vdc, Vbe = 0. Tc = 25X)

ON CHARACTERISTICS

hFE

DC Current Gain

150

(lC = 200 mAdc, Vce = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

6.5

8.0

(Vcb = 24 Vdc, lg = 0. f = 1.0 MHz)

FUNCTIONAL TESTS

Common-Emitter Amplifier Power Gain (Broadband)

Gpe

9.0

(VCc = 24 Vdc, Pout = 6.0 W, f = 300 MHz)

Collector Efficiency

(Vcc = 24 Vdc, Pout = 5.0 W, f = 900 MHz)

Load Mismatch Stress

No degradation in

(Vcc = 24 Vdc. Pjn = 0.63 W, f = 900 MHz,

VSWR = 20:1, all phase angles)

output power

FIGURE 1 BROADBAND TEST RXTURE

r_n

1C7

-*-0

Shorted [~^
T +

Test)

X 4=

J;C3

1 C1
T2

*C4

nC10

CI
C10
C6, C14

39 pF, 100 Mil Chip Capacitor

47 pF, 100 Mil Chip Capacitor
10 pF, 25 V Tantalum

C5,
C7,
C3.
C2,

1000 pF, 350 V Unelco

91 pF. Mini-Unelco
12 pF. Mini-Unelco
0.8-8.0 pF Johansen Gigatrim
5.0 pF. Mini-Unelco

C13

C11. C12
C4

C8, C15

0.685"

1 C8*
I

C2?Vt
._

::C9

DUT

^ri__jC13 7k
_[ +i
5pC14

Sockets

C6?kc5
(ForAVRE

>h->-^*l

CIS*

L1, L6

10 Turns #20 AWG Around 10 Ohm 1/2 Watt Resistor

4 Turns #16 AWG Choke

Ferrite Bead

L2.L5
L4

T1.T4
T2
T3

0.5", #18 AWG Wire

SO Ohm Microstrip Line
W = 165 Mils. I = 1946 Mils
W = 166 Mils, I = 1563 Mils

PC Board 0.031" Glass Teflon (cr = 2.56)

MOTOROLA RF DEVICE DATA

2-892

MRF891

RGURE 3 OUTPUT POWER versus SUPPLY VOLTAGE

RGURE 2 OUTPUT POWER versus INPUT POWER

1
oc

8.0

1 |

7.0

900 MHZv

850 MHz^

Pin =1W^

8.0

f = 900MHz

6.0

^960 MHi

kr=o**^

6.0

5.0

4.0

3.0

vcc
3

= 24 Vdc

2.0

n = 0 tw

2.0

1.0
0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Pi.INPUT POWER (WATTS)

Vcc.SUPPLY VOLTAGE (VOLTS)

RGURE 5 TYPICAL BROADBAND CIRCUIT PERFORMANCE

RGURE 4 OUTPUT POWER versus FREQUENCY

8.0

_ 7.0

Pin = 9.6 Watts

'CC =

= LOW

Ph. = 0.6 W

6.0

Pout

| 50

4.0

60% g
Vc~

I 3.0

50%

in = 0

| 2.0

2.0:1

vc C = 2 IVdc
1.0

1.6:1 I

to wtVSWR

1.2:1

875

900

925

850

950

875

900

925

950

I, FREQUENCY (MHz)

f, FREQUENCY (MHz)

RGURE 6 SERIES EQUIVALENT INPUT IMPEDANCE

RGURE 7 SERIES EQUIVALENT OUTPUT IMPEDANCE

UvJ IfflrfHrfUrTrrlrTiTTf vcc* * vte Pewit ''j'vOii*> o%'

MOTOROLA RF DEVICE DATA

2-893

MRF891

FIGURE 8 PHOTOMASTER FOR TEST CIRCUIT

NOTE: The Printed Circuit Board shown is 75% of the original

FIGURE 9 BROADBAND TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-894

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF892

The RF Line
14 W

900 MHz

RF POWER
TRANSISTOR
NPN SILICON RF POWER TRANSISTOR

NPN SILICON

... designed for 24 volt UHF large-signal, common-base amplifier

applications in industrial and commercial FMequipment operating
in the range of 804 - 960 MHz.

Specified 24 Volt, 900 MHz Characteristics

Output Power =14 Watts
Minimum Gain = 8.5 dB

Efficiency = 55%

Series Equivalent Large-Signal Characterization

Capable of 30:1 VSWR Load Mismatch at Rated Output Power

and Supply Voltage

Gold Metallized, Emitter Ballasted for Long Life and Resistance to

Metal Migration

Silicon Nitride Passivated

J_|4-1U-dik [fcmiii8
_________
|t|Ai|mS|
r

it_i:

STYIE1:

MAXIMUM RATINGS

Rating
Collector-Emitter Voltage

Symbol

Value

Unit

VCEO

Vdc

Collector-Base Voltage

VCBO

50.0 V

Vdc

Emitter-Base Voltage

vEBO

4.0

Vdc

Collector Current Continuous

2.5

Adc

Total Device Dissipation @ Tc = 25C (1)

Watts

0.29

mW/'C

Tstg

-65 to +150

Derate Above 25C

Storage Temperature Range

]||aciii |i|e|e|

PIN1. BASE(COMMON!
2. EMITTER(INPUT)
3 BASE (COMMON!
4 BASE ICOMMONI
5. COLLECTOR (OUTPUTI
6. BASEICOMMONI

NOTES:

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case (2)

3.5

C/W

(11This device is designed for RF operotion. The total device dissipation rating applies
only when the device is operated as an RF amplifier.
(21Thermal Resistance is determined under specified RF operating conditions by infrared
measurement techniques.

1. DIMENSIONING ANDTOLERANCING PERANSI

YM5M. 1332.
2. CONTROLLINGDIMENSION: INCH.

E
F

2.70

294

INCHES
MIN
MAX
0.985
0.965
0375
0.355
0230
0.260
0.12S
0.115
0.106
0.116

1.91

215

0075

0.065

4.07

4.31

0.11
2.29

0.15

0.160
0.004

0.006

DIM
A
B
C
0

L
N
0

mumHTBtS
MIN
MAX
2452
2501
?52
902
660
5.85
3.17
2.93

279

iaesc
6.12

5.72
318

342

0.125

CASE 319-08

MOTOROLA RF DEVICE DATA

2-895

0.170

0.090
0.110
0.72SBSC
0.241
0225
0.135

MRF892

ELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted)

Symbol

Min

Collector-Emitter Breakdown Voltage

(lC = 25 mAdc. Ib =0)

v(BR)CE0

Vdc

Collector-Emitter Breakdown Voltage

dC = 25 mAdc, VBE =0)

V(BR)CES

Vdc

Emitter-Base Breakdown Voltage

(l = 5.0 mAdc. lc =0)

v(BR)EBO

4.0

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS

Collector Cutoff Current

CBO

2.0

Vdc

mAdc

(VCB=30Vdc. IE= 0)
ON CHARACTERISTICS
DC Current Gain

hFE

(lc = 1 0 Adc. Vce = 5.0 Vdcl

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

12.5

(Vcb = 30 vdc. Ie = o, f = i .o mhz)

FUNCTIONAL TEST

Common-Base Amplifier Power Gain

Gpe

8.5

9.5

Cout = 14 W. VCc = 24 Vdc. f = SOOMHz)

Collector Efficiency

(Pout = 14 W. Vcc = 24 Vdc. f = 900 MHz)

RGURE 1 850-900 MHz BROADBAND CIRCUIT SCHEMATIC

C8^

=?C7

VRE vLC5-L

:Ei5j~ciL"
ci

* iwvi I

_M_HI-_Z_J_

L"_J

CI 51 pF, 100 Mil Chip Capacitor

C2, C3 13 pF Mini-Unelco
C4 43 pF. 100 Mil Chip Capacitor
C5, CIO 10 uF. 35 WV
C6, C9 500 pF Unelco J101
C7, C8 91 pF Mini-Unelco
C11 0.8-8.0 pF Johanson Gigatrim

I
B Ferrite Bead, Ferroxcube 56-590-65-3B

TL1 Micro Strip, 50 fl

TL2 Micro Strip, Zq = 26 ft, A/4 @ 875 MHz

TL3 Micro Strip, Z0 = 14 ft, A/4 @ 875 MHz
Board 0.032" Glass Teflon

2 oz. Cu CLAD, er = 2.55

L1, L2 4 Turns #18 Enameled, 5/32" ID

L3, L4 14 Tums #22 Enameled Over 10 ft Carbon Resistor

MOTOROLA RF DEVICE DATA

2-896

MRF892

FIGURE 3 OUTPUT POWER versus SUPPLY VOLTAGE

FIGURE 2 OUTPUT POWER versus INPUT POWER

800MHi^_,

28
w

9 80 MH

Pin =

2.0W

s 20

Pin =

Vr r = 24 V

0.5

1.0

t.S

1 = SOO MHi

2.0

Vcc. COUECTOR SUPPLY V01TAGE (VOLTS)

Pin.INPUT POWER (WATTS)

FIGURE 4 -

1.0W

FIGURE 6 - TYPICAL PERFORMANCE IN

BROADBAND CIRCUIT

OUTPUT POWER versus FREQUENCY

Pln= 2.0 W

= 1.5W

g IB

LOW

Gpb
60 E.

! 8-0
It

| 12

VCc

6.0

50
sc

j_ 8.0

2:1

E3
_l

J *0

.5:1

Vr r = 24 V -

1/SWR

2.0
1:1

8S0

875

800

8S0

925

880

870

880

f. FREQUENCY (MHi)

I, FREQUENCY (MHi)

MOTOROLA RF DEVICE DATA

2-897

830

900

MRF892

FIGURE 7 - SERIES EQUIVALENT

FIGURE 6 - SERIES EQUIVALENTINPUT IMPEDANCE

OUTPUT IMPEDANCE

H)L* = Coniugale ol Ihe optimum loadimpedance into

which the device output operates at a given oulpul
power, voltage, and frequency

FIGURE 8 -

850-900 MHz TEST CIRCUIT

MOTOROLA RF DEVICE DATA

2-898

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF894

The RF Line
30 W

900 MHz

RF POWER
TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

NPN SILICON

. .. designed for 24 volt UHF large-signal,common-baseamplifier

applicationsin industrialand commercialFM equipmentoperating
in the range of 804 - 960 MHz.

Specified 24 Volt, SOO MHz Characteristics

Output Power = 30 Watts
Minimum Gain = 7.0 dB

Efficiency = 55%

Series Equivalent Large-Signal Characterization

Capableof 30:1 VSWR Load Mismatch at Rated Output Power

and Supply Voltage

Gold Metallized, Emitter Ballasted for Long Life and Resistance to

Metal Migration

Silicon Nitride Passivated

MAXIMUM RATINGS
Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEbo

4.0

Vdc

Rating

STYLE 1:

Collector Current Continuous

7.0

Adc

Total Device Dissipation Tc - 25C (1)

115

Watts

0.66

W/C

Tstg

-65 to +150

Symbol

Max

Unit

RflJC

1.5

C/W

Derate Above 25C

Storage Temperature Range

NOTES:

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case (2)

PIN1. BASE (COMMON)

2 EMITTER(INPUT)
3. BASE ICOMMONI
4. BASE ICOMMONI
5 COLLECTOR lOUTPUT)
6 BASE ICOMMONI

t. DIMENSIONING AND TOLERANCING PERANSI

Y14.5M. 1982.
2. CONTROLLING DIMENSION: INCH

KlUMCTERS
km
MAX
2501

DM
A
B
c

2452
9.02

0
E
f

2.70

585
2.93

9.52
6.60

4.07

3.17
2.94
MS
4.31

0.11

0.15

2.29

2.79

L
N
Q

18 42 BSC
6.12
5.72
318
3.42

131

otaKES

km
0.965
0355
0.230
0115
0.106

2-899

0125
0116

0085
0.075
0.170
0.160
0004
0.006
0090
0.110
0725 BSC
0241
0725
0.125

CASE 319-06

MOTOROLA RF DEVICE DATA

MAX
0.985
0375
0.260

0.135

MRF894

ELECTRICAL CHARACTERISTICS (Tc =25-C unless otherwise noted)

Characteristic

Symbol

Min

Collector-Emitter Breakdown Voltage

(lC = 25 mAdc. Ib = 0)

v(BR)CE0

Collector-Emitter Breakdown Voltage

dC = 25 mAdc. VBe = 0)

V(B R(CES

Emitter-Base Breakdown Voltage

(IE= 5.0 mAdc. lc = 0)

v(BR)EBO

4.0

Typ

Max

OFF CHARACTERISTICS

Collector Cutoff Current

'CBO

(vCb = 30 vdc. Ie = 0)

Vdc

mAdc

ON CHARACTERISTICS
DC Current Gain

hFE

120

dC = 2.0 Adc. Vce = 50 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance
(Vcb = 30 Vdc. Ig = 0. f = 1.0 MHz)

C0b

8.5

FUNCTIONAL TEST

Common-Base Amplifier Power Gain

Gps

7.0

Pout = 30 W. VCc = 24 Vdc. f = 900 MHz)

Collector Efficiency

(Pout = 30 W. VCc = 24 Vdc. f = 900 MHz)

RGURE 1 850-900 MHz BROADBAND CtRCUIT SCHEMATIC

C9i

=?C4

Vre I

'>-eii>4^7^-hr<;

Port ^Cl4=C2

' iWV j I

HOII

TL2

CI, C13 5 /iF, 50 Vdc

C2, C12 1000 pF Unelco
C3, C11 47 pF, 100 Mil Chip Capacitor
C4, C9 91 pF, Mini-Underwood
C5, C6 12 pF, Mini-Underwood
C7 18 pF, Mini-Underwood
C8 24 pF, Mini-Underwood
C10 0.8-8.0 pF Johanson Gigatrim

LI, L4 11 Turns #20 Enameled Over 10 n Carbon Resistor

L2, L3 4 Turns #20 Enameled, .15" ID

B Ferrite Bead, Ferroxcube S6-590-65-3B

TL1, TL4 Micro Strip Line, 50 n

TL2 Micro Strip, 20 = 30 tl, A/4 @ 875 MHz
TL3 Micro Strip, Zq = 22 tl. A/4 <5? 875 MHz
Board 0.032" Glass Teflon

2 oz. Cu CLAD, er = 2.55

MOTOROLA RF DEVICE DATA

2-900

MRF894

TYPICAL CHARACTERISTICS

FIGURE 3 OUTPUT POWER versus FREQUENCY

FIGURE 2 OUTPUT POWER versus INPUT POWER

1
"*~900 MHi

^11

8.0 W,

j2 40

v> 40

-si 0

MHz

SOW

_:ldW

VCC = 24 V
< 10

vcc = 24

1
2 .0

e .0

ii 0

S 0

8 '5

ft SO

950

925

I. FREQUENCY (MHi)

Pin. INPUT POWER (WAnS)

FIGURE S TYPICAL BROADBAND

FIGURE 4 OUTPUT POWER versus

CIRCUIT PERFORMANCE

SUPPLY VOLTAGE

Gpe

-P:* = s n w .

8.0
S

"*""? 4.0 W

| 30
O

1 6.0
D=

3.0 W

1.5:1

V(T= 24 V

o 10

8.0 W

2.0

1 = 9001Mi

1:1

o
10

1.25:1

VSWR

i 50

6 SO

8 10

3 SO

f. FREQUENCY (MHt)

Vcc. SUPPLY VOLTAGE (V01TS)

MOTOROLA RF DEVICE DATA

2-901

890

900

MRF894

FIGURE 6 -

SERIES EQUIVALENT IMPEDANCE

Vcc = 24 Vdc.Pou

= 30W

Frequency

Zin
Ohms

zol*
Ohms

900

0.9 t J4.5 1.0 + jO.7

l.3 + |.7 1.1 +J0.9
1.6 + J4.4 1.2 + p.l

960

I.B+ j3;7 I.2+J1.3

800

850

Zol' Conjugate o!the optimum load impedance into which the device output operates
at a givenoutputpower,voltage, and frequency.

FIGURE 7 -

850-900 MHz BROADBAND CIRCUIT

MOTOROLA RF DEVICE DATA

2-902

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

The RF Line

NPN Silicon
RF Power Transistor
60 WATTS, 850-960 MHz

... designed for 24 Volt UHF large-signal, common base amplifier applications in indus

RF POWER TRANSISTOR

trial and commercial FM equipment operating in the range 850-960 MHz.

NPN SIUCON

Motorola Advanced Amplifier Concept Package

Specified 24 Volt, SOO MHz Characteristics

Output Power = 60 Watts
Minimum Gain .= 7 dB
Efficiency = 60%

Double Input/Output Matched for Wideband Performance and Simplified External

Matching
Series Equivalent Large-Signal Characterization
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
Silicon Nitride Passivated
CASE 333A-02. STYLE 1

MAXIMUM RATINGS
Symbol

Rating

Value

Unit

Vdc

Adc

175

Watts
W/C

Vdc

VceO

Collector-Emitter Voltage
Collector-Base Voltage

VCbo

Emitter-Base Voltage

VEBO

Vdc

Collector-Current Continuous

Total Device Dissipation (g> Tq = 25C

Derate above 25C

Storage Temperature Range

'stg

-65 to +150

Symbol

Max

Unit

Rfljc

"C/W

THERMAL CHARACTERISTICS

Characteristic
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.)

Characteristic

Symbol

Min

V(BR)CEO

Vdc

V(BR)CES

Vdc

V(BR)EBO

Vdc

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC = 50 mAdc, \q = 0)
Collector-Emitter Breakdown Voltage

(lC = 50 mAdc, Vbe = >

Emitter-Base Breakdown Voltage

(IE = 5 mAdc, lc = 0)
Collector Cutoff Current

'CES

(Vce = 30 vdc, Vbe = n. Tc = ss-a

MOTOROLA RF DEVICE DATA

2-903

mAdc

MRF898

ELECTRICAL CHARACTERISTICS continued (Tc = 25"C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

hFE

150

UnH

ON CHARACTERISTICS
DC Current Gain

dc = 2 Adc. Vce = 5 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance*

Cob

(Vcb 24 Vdc, l = 0, f = 1 MHz)

FUNCTIONAL TESTS

Common-Base Amplifier Power Gain

Gpb

(Vcc " 24 Vdc, Pout = 60 W, f = 900 MHz)

7.9

Collector Efficiency

(Vcc = 24 Vdc, Pout = 60 W, f = 300 MHz)

Output Mismatch Stress

Vcc = 24 V. Pout = 60 Watt, f = 900 MHz, VSWR = 5:1

(all phase angles)

No Degradation in Output Power

'Value of "Cot,"is that of die only. Itis not measurable in MRF8S8 becauseof internal matchingnetwork.

VRE
Co

. 1 . WV-i-fl

rfl

) t

"C4

t wv t * T

i C6J_ ql+C8_j_

+wr

(-. ^C5 T T T

-OGND

gnd 1
50

OHMS

HUH

<r-m-< OHMS

B1, B2, B3 Bead, Ferroxcube 56-390-65/3B

Board 3M Epsilam-10, 50 Mil

TL1, TL6 50 Ohm Microstrip

C1, C2, CI 2 39 pF, 100 Mil Chip Capacitor

C3, C11 91 pF, Mini Underwood or Equivalent
C4, C7, C9 10 uF, 35 V Electrolytic

TL2 400x950 Mils

TL3, TL4 140 x 200 Mils

CS 4000 pF, 1 kV Ceramic

C6, C10 1000 pF, 350 V Unelco or Equivalent
C8 47 pF, 100 Mil Chip Capacitor

TL5 320 x 690 Mils

TL7 260 x 230 Mils

L1. L4 4 Turns #18 AWG Choke

L2 11 Turns #20 AWG Choke on 10 Ohm, 1 Watt Resistor
L3 3 Turns #18 AWG Choke on 10 Ohm, 1 Watt Resistor

Bias Boards 1/32" G10 or Equivalent

Rgure 1. 850-S60 MHz Broadband Test Circuit

MOTOROLA RF DEVICE DATA

2-904

MRF898

100

I
-Pin-

Pin = 14W

-1

900 MHi

"Pin = W
960 MHz

60 "Pin
-

- WW

Pjn = 8W

/
VCC = 24V

Vcc = 24V

950

900

I, FREQUENCY (MHzl

Pin. INPUT POWER (WATTS)

Rgure 3. Output Power versus Frequency

Rgure 2. Output Power versus Input Power

too
w

Pin = 14W.
Pin

GPA

= 12 W-

SO g

70 j

"\f In =

601

fc_

P-m = 12W

VPin = 8W
2

40|

Vcc = 24V

"VSWR
fo9C OMHi

r- E

73 9

1.3

30|
20#
10
0

900

850

960

f, FREQUENCY (MHz)

Vcc,SUPPLY VOLTAGE (VOLTS)

Rgure 5. Typical Broadband Circuit Performance

Rgure 4. Output Power versus Supply Voltage

)W,Vcc = 24V
F
MHz
850

Zin

ZOL*

Ohms

IU + J2.3

4.0 + J33

900

92 - jl.0

4.4 + jl.8

960

4.7 - J2.0

S3 + J3.7

>Zqi,* = Conjugate ofoptimum load impedance

intowhichthe deviceoperates at a

given output power, voltage andfrequency.

?650MHzS

(960MHz]

Rgure 6. Input/Output Impedance versus Frequency

MOTOROLA RF DEVICE DATA

2-905

MRF898

Vre Bias Board

Collector Bias Board

_
RF Input Board

rF Output Board

NOTE: The Printed Circuit Board shown is 75% of the original.

Figure 7. Photomaster

Figure 8. 850-960 Broadband Test Circuit

MOTOROLA RF DEVICE DATA

2-906

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF901

The RF Line
2.5 dB @ 1.0 GHz

HIGH FREQUENCY
TRANSISTOR
NPN SILICON

NPN SILICON HIGH-FREQUENCY TRANSISTOR

... designed primarily for use in high-gain, low-noise small-signal

amplifiers. Also usable in applications requiring fast switching
times.

High Current-Gain-Bandwidth Product fj = 4.5 GHz (Typ) @

lC - 15 mAdc
Low Noise Figure @ f = 1.0 GHz NF = 2.0 dB (Typ) and
2.5 dB (Max)

High PowerGainGpe= 10 dB(Min) @f = 1.0 GHz

Third Order Intercept = +23 dBm (Typ)

n
<

n=>

MAXIMUM RATINGS

Rating

Symbol

Voluo

Unit

Collector-Emitter Voltage

vCEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

VEBO

2.0

Vdc

Collector Current Continuous

Total Device Dissipation @ Tc = 25C

0.375

Watt

3.3

mW/C

150

Derate above 25C

Storage Temperature Range

Tstg

Thermal Resistance. Junction to Ambient

STYIE 2

PINI COLLECTOR
2 EMITTER
3 BASE
4 EMITTER

NOTE
DIMENSION 0 NOTAPPLICABLE IN ZONE N

MILLIMETERS

THERMAL CHARACTERISTICS
Characteristic

-SiATIIGfUN!

Symbol

R0JA

Max
300

Unit
-C-'W

MOHES

MIN

MAX

MIN

MAX

4.44

521

0175

::::

0 0/5

084

3 y-

3 033

3 035

:;;

030

:::

owe

X
L
N

016
4
:-:-.
-

114
:

3 2=:

11.43

0415

165

CASE 317-01

MOTOROLA RF DEVICE DATA

2-907

j'.t

:?::
:v,:

QCv>

MRF901

ELECTRICAL CHARACTERISTICS (Tc 25C unlessotherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

<IC-1-0 mAdc, lB-0)

Collector-Base Breakdown Voltage

(lC-0.1 mAdc, lE-0)

Emitter-Bate Breakdown Voltage

He -0.1 mAdc, lc-0)

Collector Cutoff Current

v(BR)CEO

vIBR)CB0

V(BR)EBO

'CBO

IVcB-15Vdc.lE-0)

Vdc

nAdc

ON CHARACTERISTICS

hFE

DC Current Gain

200

(lC - 5.0 mAdc, VCe ' 5 0 Vdc)

DYNAMIC CHARACTERISTICS
Current-Gain-Bandwith Product

(lC - 16 mAdc, Vce - 10 Vdc, f - 1.0 GHz)

Collector-Base Capacitance

4.5

ccb

GHz

0.4

1.0

2.0

2.6

(Vcb * io vdc, i - o, f -1.0 MHzl

Noise Figure

(lC- 6JO mAdc. Vce " 80 Vdc. f - 1.0 GHz)

FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain

Gpe

(VCc " &0 Vdc. lc - 6.0 mA, f - 1.0 GHz)

Third Order Intercept

+23

(lC - 5.0 mAdc. Vce - 6.0 Vdc, f - 0.9 GHz)

FIGURE 1-1.0 GHz TEST CIRCUIT SCHEMATIC

Vcc - 6.0 Vdc

RF Input >-

en
Bias

Slug Tunar

FIGURE 2 -

J Q
Slug Tuner

Bias
Tm

MAXIMUM UNILATERAL GAIN

versus FREQUENCY

1 1
V EC

| IS

='0 Vdc

15 mA
! .0 mA

^,v
5.0

^
'

* S^

0.2

0.5 0.7

1.0

2.0

I. FREQUENCY (GHi)

MOTOROLA RF DEVICE DATA

2-908

S
5.0

<RF Output

dBm

MRF901

FIGURE 3 - CURRENT GAIN - BANDWIDTH PRODUCT

veraua COLLECTOR CURRENT

FIGURE 4 -

NOISE FIGURE vtnui FREQUENCY

5.0
X
C9

3.0

VC = 5.0V

g 40

g 2.5

V(,E =

1 2.0

g 3.0
s

VeE=10We.

lC= 5.0 mA

u: 1.5
z

to 2.0

f = 1.0 GHz
1.0

Jt'"

8.0

0.15

0.2

0.3

lr>COUECTOR CURRENT (mA)

0.5

0.7

1.0

1.5

2.0

I. FREQUENCY (GHt)

FIGURE B NOISE FIGURE vorsus

COLLECTOR CURRENT

FIGURE 6 -

MAXIMUM UNILATERAL GAIN

vorsus COUECTOR CURRENT

\
-2.5

0.4

\
VCE = 6.0 Vdc

VCE = inv

f=1. 1 GHz

f= 1.0 GHz

1.5

1.0

2.0

4.0

6.0

8.0

1.0

6.0

It COLLECTOR CURRENT (mA)

s^
?

_ 20

0s
^

g 15
z

1=1.01MHz

vCe = lov
% 12

5.0 mA

15 mA

S 10

--^

*X*

#5.0

0.15

0.2

0.3

0.4

0.5

0.7

t.O

1.5

FIGURE 8 - COUECTOR-BASE CAPACITANCE

versus COLLECTOR-BASE VOLTAGE

FIGURE 7 - IS21I2 versus FREQUENCY

9.0
12
15
18
21
lr>COUECTOR CURRENT (mA)

2.0

3.0

4.0

6.0

8.0

Vcb.COLLECTOR-BASE VOLTAGE (Vdc)

I. FREQUENCY (GHz)

MOTOROLA RF DEVICE DATA

2-909

3.0

MRF901

VCE
(Volts)
5.0

c
(mA)
5.0

(MHz)
100

S21

Si 1

"Sn"
0.71

S22

S12

IS21I

-38

11.30

153

IS12>

Z<*

I822I

0.03

0.92

-17

200

0.62

-76

9.48

133

0.05

0.76

-29

500

0.54

-141

5.40

100

0.07

0.48

-44

1000

0.53

178

2.93

0.09

0.40

-56

2000

0.59

130

1.51

0.16

0.35

-85

100

0.57

-58

16.95

145

0.03

-23

200

0.51

-103

123

0.04

500

0.52

-161

12.61
6.24

0.85
0.64

006

0.38

-45
-54

-35

1000

0.52

166

3.24

0.09

0.33

2000

0.59

125

1.66

0.17

0.29

-84

100

0.48

-75

20.08

139

002

0.80

-27

117

0.04

0.57

-38

0.05

0.34

-44

200

0.47

-121

13.89

500

053

-170

6.44

1000

0 53

162

3.33

0.09

0.31

-52

2000

0.60

123

1.70

0.18

0.28

-82

100

0.44

-88

21.62

136

0.02

0.76

-28

200

0.47

. -132

14.33

114

0.03

0.53

-38

500

0.53

-175

6.45

0.05

0.32

-41

1000

0.53

159

3.31

009

0.31

-50

2000

0.61

122

1.69

0.18

0.28

-80

100

0.43

-112

21.45

130

0.02

0.72

-28

200

0.50

-148

13.38

109

0.03

0.51

-33

500

0.57

178

0.05

0.35

-34

1000

0.57

156

5.82
2.99

0.08

0.35

-46

2000

0.65

121

1.50

0.18

0.33

-78

S21

Si 1

S12

S22

vce

(Volts)

(mA)

(MHz)

"Sill

IS21I

IS12I

IS22I

5.0

100
200

0.73

-35

11.32

0.03

-69

9.69

0.05

0.93
0.79

-14

063

154
135

500

0.53

-135

5.65

101

0.07

0.54

-38

-48

1000

0.51

-177

3.11

0.08

0.47

2000

0.57

132

1.58

0.14

0.41

-75

100

0.59

-52

17.06

147

0.87

-19

-95

200

0.52

13.06

125

0.02
0.04

0.69

-30

500

0.49

-156

6.58

005

0.45

-37

1000

0.50

170

3.44

0.08

0.41

-45

2000

0.57

126

1.75

0.16

0.36

-72

100

0.51

-66

20.36

141

0.02

0.83

-22

200

0.47

-112

119

0.03

0.63

-31

500

0.50

-166

14.48
6.81

0.05

0.41

-35

1000

0.50

164

3.54

0.08

0.39

-43

2000

0.58

124

1.78

0.16

0.35

-70

100

0.47

-78

22.08

138

.0.02

0.80

-23

200

0.46

-123

15.07

116

0.03

0.60

-30

500

0.50

-171

6.84

0.05

0.40

-32

162

3.51

0.08

0.39

-41

0.17

0.35

-68

0.76

-23

1000

-25

0.51

2000

0.59

123

1.77

100

0.44

-98

22.70

133

0.02

200

0.47

-139

14.47

111

0.57

-27

-28

0.53

-177

6.33

0.03
0.04

0.43

1000

0.54

158

3.26

0.07

0.43

-39

2000

0.62

122

1.61

0.16

0.39

-68

500

MOTOROLA RF DEVICE DATA

2-910

MRF901

FIGURE 9 -

INPUT AND OUTPUT REFLECTION

FIGURE 10FORWARD/REVERSE TRANSMISSION

COEFFICIENTS versus FREQUENCY

(VCE= 10 V. IC= 16 mA)

(VCE=10V, lC=15mA)

-jSO
Coordinates in Ohms

FIGURE 11 -

SOURCE IMPEDANCE (rms) FOR

OPTIMUM NOISE FIGURE versus FREQUENCY

(Vce = 1<> Vdc. lc = 5.0 mA)

-j50
Coordinates in Ohms

MOTOROLA RF DEVICE DATA

2-911

MRF901

FIGURE 12 - CONSTANT GAIN AND NOISE

. FIGURE CONTOURS

(VCE = 10 Vdc. Iq = 6.0 mA f = 600 MHz)

|S2l|2

'Maximum Unilateral Gain. Gumax =:757 (K < 1)

u
(1-lSnl2) d-|S22lz)

FIGURE 13 - CONSTANT GAIN AND NOISE

FIGURE CONTOURS

(Vce = 10 Vdc, lc = B.OmA f = 1.0 GHz)

Maiimum Available Gain. Gma =rp-r(K \/k2 - ' I l* >1)

MOTOROLA RF DEVICE DATA

2-912

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF904

The RF Line

NPN SILICON HIGH-FREQUENCY TRANSISTOR

... designed for use as low-noise, high-gain, general purpose amplifiers.

High Current-Gain Bandwidth Product

Iq = 30 mA
HIGH FREQUENCY
TRANSISTOR

fj = 4.0 GHz (Typ) (a lC = 15 mAdc

Low Noise Figure
NF = 1.5 dB (Typ) ( f = 450 MHz
= 2.5dB(Typ)@f = 1.0 GHz
High Power Gain

NPN SIUCON

Gmax = 16 dB (Typ) <ff f = 450 MHz

= 10dB(Typ)@f = 1.0 GHz
Excellent Third Order Intercept +25 dBm (Typ)
MIL-S-19500 Processed Versions Available as MRF904HX, MRF904HXV

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

vceo

Vdc

Collector-Base Voltage

Vcbo

Vdc

Emitter-Base Voltage

VEBO

3.0

Vdc

Collector Current Continuous

mAdc

Total Power Dissipation @ Ta = 25C

Rating

Derate above 25C

0.2

Watt

1.14

mwrc

-65 to +200
Storage Temperature Range
Tsta
ELECTRICAL CHARACTERISTICS (Tc = 2SC unless otherwise noted.)

Characteristic

rBn

| Symbol | Min | Typ | Max | Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

Vdc

Collector-Base Breakdown Voltage

dC = 0.1 mAdc, Ie = 0)

V(BR)CBO

Vdc

Emitter-Base Breakdown Voltage

V(BR)EBO

3.0

Vdc

200

=Ji

(lC = 1.0 mAdc, Ib = 0)

IU-D

dE = 0,1 mAdc, lc = 0)
Collector Cutoff Current

>CBO

nAdc

style 10
pin 1 emitter
2 BASE
3 COLLECTOR
4CASE

(Vcb = 15 Vdc, l = 0)

V%^

ON CHARACTERISTICS
DC Current Gain

"FE

(lC = 5.0 mAdc, Vce = 5.0 Vdc)

NOTE:ALLRULESAND NOTESASSOOATEOWITHTO-72
OUTLINE SHALLAPPLY

DYNAMIC CHARACTERISTICS

Current-Gain Bandwidth Product

4.0

GHz

dC = 15 mAdc, Vce = 10 Vdc, f = 1.0 GHz)

Collector-Base Capacitance
(Vcb = 10 Vdc, Ie = 0, f = 1.0 MHz)
Noise Figure

Ccb

1.0

PF
dB

f = 450 MHz)

KUMETERS
MW
MAX
5S4
S31

0209

0233

451

495

0178

0195

4.32

041

533
0.53
076

0170
0016

0210
0021

048

0016

C = 5.0 mAdc, Vce = 6.0 Vdc,

dC = 5.0 mAdc, Vce = 60 Vdc. f = 1.0 GHz)

DIM

041

1.5

2.5

J
K

FUNCTIONAL TEST

Unilateralized GainC)
dC = 5.0 mAdc, VCe = 60 Vdc,

0019
0100 BSC

091

117

0036

071

122

0028

0500

6.35 1 -

0250

1270 I

45 BSC
0059 BSC

1 127

CASE 2003

(TO-72)

MOTOROLA RF DEVICE DATA

2-913

45 BSC
127 BSC

(1-|Sll|Z>n-|S22l2)

TO-206AF
(DGn

0046
0018

f = 450 MHz)

dc " 5.0 mAdc, Vce = 6.0 Vdc, f = 1.0 GHz)

MAX

0030

2MBSC

G
-

MCHES
MIN

1 0060

MRF904

FIGURE 1 - NOISE FIGURE versus FREQUENCY

FIGURE 2 - NOISE FIGURE versus COLLECTOR CURRENT

4.0

vce
ic

-6.0 Vdc

vce = 6.0 Vdc

2.0

zs- Optimum

zs- iOtt

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

2.0

1.0

6.0

8.0

IC. COLLECTOR CURRENT (mAdc)

I. FREQUENCY. (GHz)

FIGURE 4 - UNILATERALIZED GAIN (Gnx) versus

FIGURE 3 - COLLECTOR-BASE CAPACITANCE versus

FREQUENCY

COLLECTOR-BASE VOLTAGE
25

0.8

0.6

s Gm
cc

lS2H2

0.4

1-1. IMHz

VCE 6.0 Vdc

IC 5.0 mAdc
1
1

2.0

4.0

6.0

8.0

0.5

VCB. COLLECTOR BASEVOLTAGE (VOLTSI

1.0

2.0

3.0

5.0

FIGURE 6 - INTERMODULATION DISTORTION versus

COLLECTOR CURRENT

FIGURE 5 -CURRENT-GAIN - BANDWIDTH PRODUCT versus

COLLECTOR CURRENT

0.7

f. FREQUENCY(GHz)

5.0

1
VC(

= 10V Ic

\\ \

vc E-2.0

1
3

Jf 2.0

20
I

-212-If 806

r. Hi

- I 798MH i;2-

2.0

4.0

6.0

8.0

4.0

lC.COLLECTOR CURRENT (mA)

6.0

8.0

IC.COLLECTOR CURRENT (mA)

MOTOROLA RF DEVICE DATA

2-914

-lOdBmOut

80 m\ /Out

11
10

MRF904

TABLE 1 - Sn PARAMETERS
Frequency (MHz)
'C
(mA)

S11

1.0

0.941

-22

0.85

-43

0.57

-91

0.37

-128

0.30

-151

2.5

0.85

-31

0.67

-57

0.35

-102

0.20

-136

0.14

-157

5.0

0.69

-44

0.46

-71

0.21

-109

0.10

-144

0.069

-166

0.45

-67

0.28

-94

0.13

-136

0.087

172

0.075

145

0.37

-110

0.31

-145

0.26

170

0.27

139

0.27

122

0.71

-178

0.71

169

0.68

144

0.68

121

0.65

107

1.0

0.94

-19

0.87

-37

0.61

-80

0.39

-114

0.30

-134

3.0

6.0

2.5

0.87

-26

0.71

-41

0.39

-84

0.21

-106

0.74

-34

0.52

-55

0.25

-77

0.13

-82

0.15
0.109

-115

5.0
10

0.55

-42

0.35

-58

0.18

-66

0.11

-60

0.105

-55

/
I1

-79

0.46

-46

0.28

-59

0.15

-64

0.096

-55

0.092

-49

0.28

-95

0.21

-134

0.16

175

0.17

135

0.17

116

1.0

0.95

-18

0.88

-35

0.63

-76

0.40

-108

0.30

-126

2.5

0.89

-23

0.74

-43

0.42

-77

0.23

-94

0.17

-100

5.0

0.77

-31

0.56

^19

0.29

-67

0.18

-69

0.15

-66
-50

0.61

-37

0.40

-50

0.23

-55

0.16

-51

0.16

0.52

-40

0.34

-51

0.20

-52

0.15

-47

0.15

-47

0.36

-55

0.21

-70

0.098

-77

0.037

-59

0.033

-27

-121

1.0

0.96

-17

0.89

-33

0.65

-73

0.41

-103

0.31

2.5

0.89

-22

0.76

-41

0.44

-73

0.25

-88

0.18

-93

5.0

0.79

-28

0.59

0.32

-63

0.20

-65

0.18

-63

0.64

-34

0.44

-47

0.26

-52

0.19

-49

0.18

-49

0.57

-37

0.38

-48

0.23

-49

0.18

-46

0.17

-46

0.41

-51

0.24

-64

0.12

-67

0.061

-52

0.055

-36

TABLE 2 - S21

1000

800

SOO

200

100

vcc
(Volts)

PARAMETERS

Frequency (MHz)

vcc

(Volts)

(mA)

S21

1.0

5.32

156

3.06

137

2.22

1.65

1.44

2.5

6.79

146

5.57

124

3.15

2.14

1.81

5.0

10.97

133

7.60

110

3.62

86
79

2.38

2.00

13.16

118

8.07

3.60

2.35

1.96

9.84

108

5.66

2.44

1.63

1.38

3.0

500

800

1000

1.65

0.88

0.47

0.43

0.45

1.0

3.33

159

3.11

142

2.36

103

1.79

1.55

2.5

6.0

200

100

6.89

5.85

129

3.48

2.38

2.00

5.0

11.49

138

8.34

115

4.12

2.70

2.25

15.71

125

9.82

104

4.39

2.85

2.34

53
52

150

16.97

119

10.05

100

4.39

2.83

2.34

12.66

108

7.02

2.98

1.94

1.61

1.0

3.31

160

3.10

144

2.41

106

1.83

1.60

2.5

6.80

151

5.85

131

3.60

2.46

2.07

5.0

11.44

140

8.54

117

4.28

2.83

2.33

15.85

127

10.14

107

4.61

2.96

2.46

17.20

122

10.47

102

4.60

2.96

2.45

16.37

113

9.38

4.00

2.58

2.14

1.0

3.25

160

3.08

145

2.40

108

1.83

1.61

2.5

6.73

152

535

132

3.63

2.50

2.10

5.0

11.19

142

8.49

119

4.34

2.85

2.37

15.59

129

10.16

108

4.66

3.00

2.47

2.14

17.04

124

10.49

104

4.65

2.99

66
64

16.18

115

9.38

4.03

2.60

MOTOROLA RF DEVICE DATA

2-915

MRF904

TABLE 3 - S12 PARAMETERS

Frequency (MHz)
100

200

vcc

(Volts)

(mA)

S12

1.0

0.054

0.097

3.0

6.0

500

800

S12

1000

S12

0.159

0.184

0.194

37
46

2.5

0.051

0.084

0.140

0.189

0.220

5.0

0.046

0.072

0.137

0.201

0.239

0.041

0.067

0.142

0.215

0.256

0.043

0.070

0.152

0.230

0.277

0.058

0.093

0.209

0.311

0.372

1.0

0.039

0.072

0.123

0.143

0.151

2.5

0.037

0.063

0.110

0.150

0.174

5.0

0.033

0.055

0.108

0.160

0.190

0.030

0.050

0.109

0.165

0.199

0.167

0.200

57
61

0.028

0.049

0.109

0.026

0.046

0.105

0.165

0.200

1.0

0.032

0.060

0.106

0.123

0.131

0.130

0.151

0.139

0.165

2.5

0.031

0.054

0.095

49
57

5.0

0.028

0.048

0.094

0.026

0.043

0.094

0.144

0.172

0.024

0.042

0.093

0.144

0.172

0.021

0.037

0.086

0.134

0.162

1.0

0.028

0.053

0.095

0.109

0.116

2.5

0.027

0.048

0.085

0.116

0.134

5.0

0.025

0.043

0.084

0.125

0.148

0.023

0.037

0.084

0.128

0.153

0.022

0.037

0.084

0.128

0.152

0.019

0.033

0.076

0.119

0.143

TABLE 4 - S22 PARAMETERS

Frequency (MHz)
1000

800

500

200

100

vcc

(Volts)

(mA)

S22

1.0

0.966

-12

0.893

-23

0.693

-41

0.612

-53

0.594

-59

3.0

6.0

0.901

-18

0.760

-29

0.548

-42

0.498

-51

0.494

-56

5.0

0.793

-24

0.619

-32

0.456

-39

0.429

-49

0.439

-54

0.635

-29

0.486

-32

0.390

-36

0.377

0.453

-29

0.364

-29

0.313

-34

0.309

-48

0.321

-14

0.048

-78

0.035

0.032

-135

0.031

-162

0.007

-167

0.683

-51

0.389

-53

0.976

-9.0

0.926

-18

0.770

-35

0.702

-46

2.5

0.935

-13

0.828

-23

0.648

-35

0.608

-43

0.608

-48

5.0

. 0.853

-18

0.712

-25

0.577

-32

0.555

-41

0.565

-46

0.758

-20

0.629

-23

0.539

-29

0.529

-39

0.544

-44

0.711

-20

0.601

-22

0.533

-27

0.526

-38

0.540

-44

0.631

-15

0.576

-16

0.548

-25

0.546

-38

0.558

-45

1.0

0.982

-8.0

0.939

-16

0.742

0.734

-47

0.947

-11

0361

-20

0.803
0399

-31

2.5

-31

0.662

-40

0.660

-45

1.0

0.627

-43

5.0

0.882

-15

0.759

-21

0.633

-29

0.617

0301

-17

0.684

-20

0.607

-26

0.601

-35

0.610

-41

-35

0.607

-40

-31

0.769

-17

0.667

-19

0.602

-25

0.601

0.737

-14

0.672

-15

0.640

-22

0.641

-33

0.655

-40

1.0

0.983

-7.0

0.949

-14

0.830

-29

0.774

-39

0.765

-40

2.5

0.954

-10

0.880

-18

0.733

-29

0.698

-37

0.702

-42

5.0

0.901

-13

0.793

-19

0.676

-27

0.659

-35

0.668

-41

0.834

-15

0.725

-18

0.646

-24

0.646

-33

0.658

-39

0.802

-15

0.706

-17

0.645

-23

0.648

-33

0.661

-39

0.776

-13

0.712

-14

0.678

-22

0.686

-32

0.699

-38

-47

MOTOROLA RF DEVICE DATA

2-916

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF905

The RF Line
400 mW

RF OSCILLATOR TRANSISTOR
NPN SILICON

NPN SILICON OSCILLATOR TRANSISTOR

. .. designed for microwave communications relay links and low-cost

radiosonde service.

Emitter Ballasted

Low Current Density for Improved Lifetime

Collector Connected to Case

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

3.5

Vdc

Collector Current Continuous

150

mAdc

Total Power Dissipation @ Tc = 100C

0.75

Watts

7.5

mW/C

Derate above 100C

Total Power Dissipation @ Ta = 25C

Derate above 25C

Storage Temperature Range

Tsta

0.45

Watts

2.6

mW/C

-65 to +200

THERMAL CHARACTERISTICS

STYLE1:
PINT HOTTER

Mum tETHtS
MM
MAX
S3*
UI
495
J
1.55
OMS

0.533
m
0J05
04J3
3 54 BSC
1.17
0.914
0.711
'3

Characteristic

Symbol

Max

Unh

Thermal Resistance, Junction to Case

R&jc

133

Thermal Resistance, Junction to Ambient

RflJA

380

"C/W

17.70

MCKES
MM
MAX
turn
033)
0.195
0.178
0065
0.095
0.016
0X121
_

0.012

0.500
0.250
45" BSC
OO50BSC

1 Ml

CASE 26-03
TO-206AB

(TO-46)

MOTOROLA RF DEVICE DATA

2-917

0.WO

0019

aioo esc
0.035
00
0028
O048
_

635
45* esc
U7BSC

2.BASE

1 O050

MRF905

ELECTRICAL CHARACTERISTICS (Tc - 25C unless otherwise noted).

Characteristic

| Symbol |

Min

V(BRICEO

V(BR)CB0

V(BR)EBO

3.5

Typ

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

(lc= 10mAdc, Ir = 0)
Collector-Base Breakdown Voltage

Vdc

Or = 0.1 mAdc. Ie = 0)
Emitter-Base Breakdown Voltage

5.0

Vdc

(1E = 0.1 mAdc, lc-0)

Collector Cutoff Current

'CBO

0.1

mAdc

(VCB = 20Vdc, lE = 0)
ON CHARACTERISTICS
OC Current Gain

hFE

150

(lC - 100 mAdc, VCE = 10 Vdc)

DYNAMIC CHARACTERISTICS

Current-Gain - Bandwidth Product

2500

MHz

(lC - 100 mAdc, VCE = 10 Vdc, f = 200 MHz)

Output Capacitance

C0b

3.0

5.0

(vcb = 20 vdc, ie = o, f = i.o mhz)

FUNCTIONAL TEST

Common-Collector Oscillator Output Power

400

pout

500

(V = -20 Vdc, 1 a 110 mAdc, f a 1.68 GHz)

FIGURE 1 - 1.68 GHz OSCILLATOR TEST CIRCUIT SCHEMATIC

X
OUT

-#C1.C6
C2.CS
C3.C4
C7.C8

R1
R2

I.OjiF, 35 Vdc TANTALUM

0.1 flF Ceramic Disk
680 pF Feedthru
0.4-6.0 pF JOHANSON

L1.L2
L3

47 0hmi, 1/4 Wott

510 Ohms, 1/4 Watt
1.5 kfi, 1/4 Watt

S Turns, #22 AWG. 0.125" I.D.

#20 AWG, 0.4" Length.

MOTOROLA RF DEVICE DATA

2-918

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF911

The RF Line
fr = 5.0 GHz @ 30 mA

HIGH FREQUENCY
TRANSISTOR

NPN SILICON HIGH FREQUENCY TRANSISTOR

NPN SILICON

. . . designed primarily for use in high-gain, low-noise tuned and

wideband small-signal amplifiers. Excellent in high-speed switch
ing applications.

High Current-Gain Bandwidth Product

fj = 5.0 GHz (Typ) @ f = 1.0 GHz
High Power Gain

Gmax= 12.5dB (Typ)@f = 1.0 GHz

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

Vebo

2.0

Vdc

mAdc

I'D

100

Collector Current -

Peak

Total Device Dissipation <? TL = 50C

Derate Above 50C
Storage Temperature Range

4.0

mW/C

Tstq

-65 to+150

Symbol

Max

Unit

RflJL

250

c/w

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance. Junction to Lead

^
FIGURE 1 -POWER DERATING
STYLE2:
PIN I. COLLECTOR

500

2. EMITTER

3 BASE

400

i EMITTER

300

200

NOTE:

DIMENSIOND NOT APPLICABLE IN ZONE N.

MILLIMETERS

S
o

MAX

4.44

1.90

5.21
254

0.075

099

0033

0039

020
0.76

030

0.008

0.012

100

150

20 0

1.14

0030

0.045

7.24

813
1143

0285
0415

0320

1054
-

1.65

CASE 317-01

MOTOROLA RF DEVICE DATA

2-919

0.100

Tl. LEA0 TEMPERATURE (UC)

INCHES
MIN 1 MAX
;::;
0175

C
D
F

100

: j-:.:

0.C65

MRF911
ELECTRICAL CHARACTERISTICS (Tr 25C unlessotherwise noted).
Symbol

Characteristic

TYP

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

v(BR)CEO

V(BR)CBO

V(BR)EBO

2.0

Vdc

(lc = 1.0 mAdc. Ib-0)

Collector-Base Breakdown Voltage

(lC = 0.1 mAdc, Ifj " 0)

Emitter-Base Breakdown Voltage

(lE - 0.1 mAdc, lc 0)

Collector Cutoff Current

>CBO

nAdc

(VCB ? 16 Vdc. IE - 0)
ON CHARACTERISTICS

hFE

DC Current Gain

200

(Ir - 30 mAdc. Vpp = 10 Vdc)

DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product

5.0

0.6

2.5

GHz

(lC-30 mAdc, VCE "10 Vdc, f- 1.0 GHz)

Collector-Base Capacitance

Ccb

1.0

(Vcb- lovdc. ig-o. f- i.omhz)

FUNCTIONAL TESTS

Noise Rgure (Minimum)

nfmin

(lC - 5.0 mAdc, VC = 10 Vdc, f - 1.0 GHz)

(IC - 5.0 mAdc, VCe = 10 Vdc, f - 2.0 GHz)

4.0

Power Gain at Optimum Noise Figure

Gnf

(lC - 5.0 mAdc, Vce - 10 Vdc, f - 1.0 GHz)

(IC - 5.0 mAdc, VCE ** 10 Vdc, f - 2.0 GHz)

6.0

Maximum Available Power Gain (1)

Gmax

(lC - 30 mAdc, VCE = 10 Vdc, f = 1.0 GHz)

(lc = 30 mAdc. VCE = 10 Vdc, f - 2.0 GHz)

12.5

7.5

!S2ll2

<1>Gmax =((HSii|2MHS22|2,

FIGURE 2 - POWER GAIN AND NOISE FIGURE

FIGURE 3 - POWER GAIN AND NOISE FIGURE

versus COLLECTOR CURRENT

versus FREQUENCY
1T

vce- ov

vce -10 Vdc

~ i" 1.0 SHi

s
V

8.0

^ Gnu, 30 mA

Gmix

6.0 5 12
m

=
4.0 9

C ma .5 OraA"^w

2 8.0
"V

6.0 2

g
S
S 8.0

i i

2.0

4.0

0.7

1.0

3.0

4.0

S.0

lC.COLLECTOR CURRENT ImA)

I, FREQUENCY (GHz)

MOTOROLA RF DEVICE DATA

2-920

MRF911
FIGURE 4-S-n
Frequency (MHz)

500

PARAMETERS
1500

1000

2000

vce

(Volts)

(mA)

S11

5.0

2.0

0.66

-125

0.64

-175

0.68

160

0.73

140

5.0

0.57

-150

0.58

170

0.62

150

0.66

135

0.54

-165

0.57

160

0.60

145

0.64

130

0.54

-180

0.57

155

0.60

140

0.64

125

0.54

175

0.57

155

0.61

140

0.65

125

2.0

0.66

-120

0.63

-170

0.67

160

0.71

140

5.0

0.56

-145

0.56

175

0.60

150

0.64

135

0.51

-160

0.53

165

0.57

145

0.61

130

0.49

-175

0.52

160

0.57

145

0.60

130

0.49

-175

0.53

160

0.57

145

0.61

130

FIGURE 5 - S22 PARAMETERS

Frequency (MHz)

2000

1500

1000

500

VCE

(Volts)

(mA)

S22

5.0

2.0

0.61

-45

0.50

-60

0.48

-80

0.50

5.0

0.40

-55

0.31

-65

0.30

-85

0.32

-100

0.27

-60

0.20

-70

0.20

-90

0.23

-105

0.19

-70

0.13

-75

0.14

-95

0.17

-110

0.16

-70

0.11

-75

0.13

-95

0.16

-110

-90

2.0

0.66

-35

0.55

-50

0.53

-70

0.54

5.0

0.47

0.38

-50

0.37

-70

0.38

0.35

-45

0.28

-50

0.27

-65

0.29

-85

0.26

-45

0.22

-50

0.22

-65

0.24

-80

0.25

0.21

-45

0.22

-60

0.24

-80

FIGURE 6 -S2i
Frequency (MHz)

VCE

500

-76

PARAMETERS

1500

1000

2000

(Volts)

(mA)

S21

5.0

2.0

3.24

100

5.0

L4
-100

S21

1.84

1.23

0.96

4.85

2.60

1.76

1.38

5.78

3.04

2.05

1.61

6.40

3.30

2.23

1.24

6.47

3.35

2.26

1.76

2.0

3.42

100

1.95

1.31

1.01

1.45

5.0

5.20

2.80

1.89

6.22

3.28

2.20

1.71

6.82

3.55

2.37

1.84

6.90

3.55

2.36

1.81

FIGURE 7-S12
Frequency (MHz)

500

PARAMETERS

1000

1500

2000

vCe

(Volts)

(mA)

S12

Sl2

5.0

2.0

0.11

0.12

0.11

0.13

5.0

0.08

0.10

0.13

0.17

0.07

0.10

0.14

0.19

0.06

0.11

0.15

0.20

0.06

0.11

0.15

0.20

2.0

0.10

0.12

5.0

0.07

0.09

0.12

0.15

0.06

0.09

0.13

0.17

0.06

0.10

0.13

0.18

0.06

0.10

0.14

0.18

MOTOROLA RF DEVICE DATA

2-921

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

IHRF914

The RF Line
f-T = 4.5 GHz @ 20 mA

HIGH FREQUENCY
TRANSISTOR
NPN SILICON

NPN SILICON HIGH FREQUENCY TRANSISTOR

. . . designed for applications requiring high-gain, low-noise and

low distortion. Also excellent for high speed switching applications.

Low Noise Figure

NF = 2.0 dB (Typ) @ f = 0.5 GHz
= 2.5 dB (Typ) @ f = 1.0 GHz

High Power Gain

Gmax " 15 dB (Typ) @ f = 0.5 GHz

= 10dB(Typ)@f = 1.0 GHz

MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Peak

Symbol

Value

VCEO
VcbO
vEBO

Vdc

'C
PD

Total Device Dissipation @Ta - 75C

Derate Above 75C
Storage Temperature Range

Tstg

Unit

2.0

Vdc

mAdc

200

1.6

mW/C

-65 to +200

THERMAL CHARACTERISTICS
Symbol

Characteristic

Thermal Resistance, Junction to Ambient

R9JA

Max

Unit

625

C/W

STYLE 10:

PIN I EMITTER
2 BASE
3. COUECTOR
4. CASE

NOTE: AU RUUS ANDNOTES ASSCCATE0WITH TO-72

OUTLINE SHAU APPLY.

FIGURE 1 -POWER DERATING

HLUKETERS
DM

A
C

531
452
432

Z
O

041

150

E
f

G
H

200

too

0230

0178

0195

S33
0.53

0.170

0210

048
2 54 BSC
1.17
091
071
'22
041

1270
635

127 BSC

0.016

1 127

0100 BSC
0.046
0048

0.036

0028

100

150

2(n

TA. AMBIENT TEMPERATURE CC)

TO-206AF

(TO-72)

MOTOROLA RF DEVICE DATA

2-922

0250
45* BSC
0050 BSC

CASE 20-03

0021
0430

0016 1 0019

0500

45" BSC

N
P

INCHES

MN 1 MAX
0.209

076

MAX
584

1 0.050

MRF914

ELECTRICALCHARACTERISTICS (Tc=25C unless otherwise noted).

Typ

Unit

Max

Symbol

Min

V(BR)CEO

V(BH)CB0

Vdc

V(BR)EBO

2.0

Vdc

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Vdc

<lc = LOmAdc, lB - 0)
Collector-Base Breakdown Voltage

(IC-0.1 mAdc. Ie=-0)

Emitter-Base Breakdown Voltage

(lE-0.1 mAdc, lc"0)

Collector Cutoff Current

'CBO

200

nAdc

(Vcn* 15 Vdc, Ie = 0)
ON CHARACTERISTICS

DC Current Gain

"FE

(lc - 20 mAdc, VCe = 10 Vdc)

DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product

4.5

0.7

GHz

(lC - 20 mAdc, VCe - 10 Vdc, f - 0.5 GHz!

Collector-Base Capacitance

ccb

1.0

IVCB 10 Vdc, Ie 0, f 1.0 MHz)

FUNCTIONAL TESTS

Noise Figure

(lC " 5.0 mAdc, VCE " 10 Vdc, f - 0.5 GHz)

(lC - 5.0 mAdc, VCE = 10 Vdc, f- 1.0 GHz)

2.0

2.5

Power Gain at Optimum Noise Figure

(lC 5.0 mAdc, VCE = 10 Vdc, f - 0.5 GHz)

(lC-5.0 mAdc, VCe = 10 Vdc, f- 1.0 GHz)

7.0

Maximum Available Power Gain (1)

''max

(lC - 20 mAdc, VCe = 10 Vdc, f - 0.5 GHz)

(lC - 20 mAdc, Vce = 10 Vdc, f - 1.0 GHz)

IS21|2
<1)Gr,

(l-lS11|2)(|-|S22l2)

FIGURE 2 - POWER GAIN AND NOISE FIGURE

FIGURE 3 - POWER GAIN AND NOISE FIGURE

versus FREQUENCY

versus COLLECTOR CURRENT

Vce "10 Vdc

vce io vdc

Gmtx 20 mA
G max 5.0 r

8.0

Grrit*

f 0.5 GHt

nA*^

S
NF

K *

2.0 5 8.0
z

i.Om
Z

0.2

0.3

0.4

0.5

0.7

1.0

I, FREQUENCY (GHz)

lC. COLLECTOR CURRENT(mA)

MOTOROLA RF DEVICE DATA

2-923

MRF914
FIGURE 4-S1 1 PARAMETERS
Frequency (MHz)

100

500

300

700

1000

vce

(Volts)

(mA)

S11

5.0

2.0

0.84

-35

0.57

-80

0.42

-115

0.34

-140

0.27

-166

5.0

0.65

-45

0.34

-85

0.23

-115

0.18

-130

0.16

-150

0.48

-50

0.32

-85

0.14

-105

0.12

-115

0.09

-120
-101

0.33

-50

0.15

-75

0.10

-90

0.09

-100

0.09

0.27

-50

0.13

-70

0.09

-85

0.09

-100

0.09

-101

2.0

0.86

-30

0.59

-75

0.42

-105

0.34

-130

0.25

-155

5.0

0.70

-40

031

-75

0.24

-95

0.18

-110

0.13

-125

0.55

-45

0.26

-70

0.17

-80

0.14

-90

0.13

-90

0.41

-45

0.21

-60

0.15

-65

0.13

-75

0.14

-80

0.36

-45

0.19

-55

0.14

-65

0.13

-75

0.13

-80

FIGURE 5 - S22 PARAMETERS

Frequency (MHz)

500

300

100

1000

700

vCe

(Volts!

(mA)

S22

5.0

2.0

0.94

-15

0.77

-25

0.68

-30

0.66

-35

0.64

-45

5.0

0.85

-20

0.63

-30

0.57

-30

0.55

-35

0.55

-45

0.75

-25

0.55

-25

0.51

-30

0.50

-35

0.50

-40

0.66

-25

0.50

-25

0.47

-30

0.47

-35

0.48

-40

0.62

-25

0.49

-25

0.46

-25

0.46

-30

0.47

-40

2.0

0.95

-10

0.81

-20

0.74

-30

0.72

-35

0.71

-40

5.0

0.87

-15

0.69

-25

0.64

-25

0.63

-30

0.63

-40

0.80

-20

0.63

-20

0.59

-25

0.59

-30

0.60

0.72

-20

0.59

-20

0.57

-23

0.57

-30

0.58

-35

0.70

-20

0.59

-20

0.57

-20

0.57

-30

0.58

-35

FIGURE 6 - S21 PARAMETERS

Frequency (MHz)

500

300

100

700

1000

vce

(Volts)

S21

5.0

2.0

5.99

150

4.06

110

2.90

2.27

1.71

5.0

11.38

135

5.91

100

3.90

2.93

2.17

15.21

125

6.78

4.34

3.23

2.38

17.98

115

7.27

4.58

3.40

2.50

18.78

110

7.37

4.64

3.42

2.50

2.0

6.05

150

4.20

115

3.04

2.37

1.75

5.0

11.46

135

6.17

100

4.06

3.08

2.26

15.45

127

7.08

4.56

3.41

2.50

18.35

120

7.57

4.80

3.58

2.61

19.12

115

7.63

4.79

3.56

2.60

FIGURE 7 - S12 PARAMETERS

Frequency (MHz)

300

100

1000

700

500

vce

(Volts)

(mA)

S12

5.0

2.0

0.04

0.09

0.11

0.12

0.16

5.0

0.04

0.07

0.11

0.14

0.19

0.03

0.07

0.11

0.15

0.20

0.03

0.07

0.12

0.15

0.21

0.03

0.07

0.12

0.16

0.21

2.0

0.03

0.07

0.09

0.10

0.13

5.0

0.03

0.06

0.09

0.12

0.15

0.17

0.03

0.06

0.09

0.12

0.09

0.13

0.18

0.10

0.13

0.17

0.03

0.06

0.03

0.06

MOTOROLA RF DEVICE DATA

2-924

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF931

The RF Line
LOW CURRENT

HIGH FREQUENCY
TRANSISTOR
NPN SILICON HIGH-FREQUENCY TRANSISTOR

NPN SILICON

. . . designed primarily for use in low-power amplifiers to 1.0 GHz.

Ideal for pagers and other battery operated systems where low-power
consumption is critical.

Low-Power Consumption Characterized for

High Current-Gain Bandwidth Product

Stripline Design for Optimum Performance

lE = 0.1 to 1.0 mA
fT = 3.0GHz (Typ)

MAXIMUM RATINGS
Symbol

Value

Unit

Collector-Emitter Voltage

Rating

vCEO

5,0

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

vEBO

2.0

Vdc

5.0

mAdc

Collector Current -

Peak

Total Device Dissipation & TA 100C

1.0

mW/C

150

Tstg

-65 to +150

Symbol

Max

Unit

R0JA

500

c/w

Derate Above 100C

Junction Temperature

Storage Tomperature Rsngo

iTZ

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Ambient

^=c^=?f

FIGURE 1 - POWER DERATING

STYLE2:
PIN I. COLLECTOR
2. EMITTER

3 BASE
4. EMITTER

.E
z

37.5
5

DIMENSION 0 NOTAPPLICABLE IN ZONEN.

MILLIMETERS
DIM

<
o

NOTE:

V
\

12.5

100

\
150

INCHES

MIN

MAX

MIN

4.44

521

0175

MAX
0.205

ISO

2.54

0075

0100

084

0.99

0033

0039

0.20

030

0008

0012

076

114

0045
0450

7.24

813

0030
0285

10.54

11.43

0415

165

200
CASE 317-01

TA.AMBIENT TEMPERATURE CC)

MOTOROLA RF DEVICE DATA

2-925

0.32O
D.06S

MRF931

ELECTRICAL CHARACTERISTICS <TC =25Cunless otherwise noted).

Characteristic
Symbol

Typ

Min

Unit

Max

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(IC =0.1 mAdc, Ib-O)

Collector-B8se Breakdown Voltage

(lC - 0.01 mAdc. Ie - 0)

Emitter-Base Breakdown Voltage

(Ig = 0.1 mAdc. lc - 0)

V(BR)CEO

5.0

V(BR)CBO

V(BR)EBO

2.0

Collector Cutoff Current

'CBO

Vdc

nAdc

(VCb =5.0 Vdc, Ie - 0)

ON CHARACTERISTICS
DC Current Gain

hFE

150

(lC - 025 mAdc, VC - 1 0 Vdc)

DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product

3.0

GHz

(lE - 1.0 mAdc. Vce " 10 Vdc, f - 1.0 GHz)

Collector-Base Capacitance

CCb

0.35

0.5

(Vcb i o vdc, i - o, f -1 .o mhz)

FUNCTIONAL TESTS

Noise Figure

(lE " 025 mAdc. VCE " 1 0 Vdc, f - OS GHz)

(1E - 0.25 mAdc, VCE - 1.0 Vdc, f = 1.0 GHz)

3.8

4.3

Power Gain at Optimum Noise Figure

Gnf

(IE - 0.25 mAdc, VCE " 1 0 Vdc, f - 0.5 GHz)

(IE =0.25 mAdc, Vce " 1 0 Vdc, f - 1.0 GHz)

Transducer Power Gain

|IE 0.5 mAdc, Vce " 1 vdC " -5 GH*>

(lE - 0.5 mAdc, VCe - 1-0 Vdc, f - 1.0 GHz)

TYPICAL CHARACTERISTICS

FIGURE 3 - TRANSDUCER POWER GAIN AND NOISE

FIGURE 2 - TRANSDUCER POWER GAIN AND NOISE

FIGURE versus EMITTER CURRENT

FIGURE versus FREQUENCY

vvce-i.o vdc

lE =250wAdc
cT

8.0 | 16
So
2

111

f 0-

\ 'c E"

1.00Hz
.OVdc

14
GT

8.0 S |

4.0 V> 3

8.0

-r*

" 5 6.0

^ 4.0
o

2.0

0.5

0.2

0.7

0.3

0.5

0.7

1.0

IE.EMITTER CURRENT (mAdc)

I. FREQUENCY (GHi)

MOTOROLA RF DEVICE DATA

2-926

2.0

3.0

5.0

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF941
MMBR941L
MRF9411L

The RF Line

NPN Silicon

Low Noise, High-Frequency

Iq = 50 mA

Transistors

LOW NOISE

HIGH FREQUENCY

... designed for use in high gain, low noise small-signal amplifiers. This series features
excellent broadband linearity and is offered in a variety of packages.

TRANSISTORS

Fully Implanted Base and Emitter Structure

9 Finger, 1.25 Micron Geometry with Gold Top Metal

Gold Sintered Back Metal

Tape and Reel Packaging Options Available

CASE 317-01. STYLE 2
MACRO-X
MRF941

MAXIMUM RATINGS

Symbol

MRF941

MMBR941L

MRF9411L

vCEO

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

VEBO

1.5

Vdc

SOT-23

0.4

Watts

LOW PROFILE

Ratings

Collector-Emitter Voltage

Power Dissipation'1'Ta = 25C

Unit

CASE 318-07. STYLE 6

MMBR941L

Collector Current Continuous'^)

TJmax

150

Storage Temperature

Tstg

-65 to +150

- 65 to + 150

Thermal Resistance.

RftJA

312

c/w

Maximum Junction Temperature

65 to 150
312

Junction to Ambient

CASE 318A-05. STYLE 1

DEVICE MARKING

SOT-143
LOW PROFILE

MMBR941L = 7Y
MRF9411L =

MRF9411L

ELECTRICAL CHARACTERISTICS (Tc = 25 C unless otherwise noted)

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS'3)
Collector-Emitter Breakdown Voltage dc = 0.1 mA. Ib = 0)

v(BR|CEO

Collector-Base Breakdown Voltage {\q

v(BR)CBO

0.1 mA, lg

Emitter Cutoff Current (Veb = 1 V, lc = 0)

Collector Cutoff Current (Vcb

10 V. Ir;

lEBO
01

ICBO

Vdc
Vdc

0.1

jiAdc

0.1

uAdc

ON CHARACTERISTICS'3'
DC Current Gain (Vce = 6 V, lc = 5 mA)

hFE

200

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance (Vcb = 10 v- 'E

- '

Current Gain Bandwidth Product (Vce = 6 v- 'C

1 MHzl

Ccb

15 mA, f = 1 GHz)

NOTES: 1. To calculate tho junction temperature use Tj = Prj x R,u/\ ' T^mBIENT
2. Iq Continuous (MTBF

10 years)

3. Pulse width - 300 ps. duly cycle - 2% pulsed.

MOTOROLA RF DEVICE DATA

2-927

0.35

8
-

pF
GHz

MRF941, MMBR941L, MRF9411L

PERFORMANCE CHARACTERISTICS
MRF941

MRF9411L

MMBR941L

Symbol

Conditions

Units

Typ

Min

Insertion Gain

Max

Typ

Min

Max

Min

Typ

Max

|S21I2

(VCE = 6 V. lc = 15 mA, f = 1 GHz)

(Vce " 6 V. lc = 15 mA, f = 2 GHz)

dB
16

Maximum Unilateral Gain'1)

(Vce = 6 V, lc = 15 mA, f = 1 GHz)
(Vce 6 V, lc = 15 mA, f = 2 GHz)

8
dB

GUmax
18

Noise Figure Minimum

10
dB

nfmin

(Vce = 6 V, lc = 5 mA, f = 1 GHz)

(Vce = 6 V. lc = 5 mA, f = 2 GHz)

1.3

2.1

Associated Gain at Minimum NF

1.3

2.1

2.1
dB

Gnf

(Vce = 6 V, lc = 5 mA. f = 1 GHz)

(VCE = 6 V, lc = 5 mA, f = 2 GHz)

9.5

Noise Figure 50 ohm Source

NF50P.

2.8

8.5
2.8

1.9

9.5

1.9

2.8

(Vce = 6 V, lc = 5 mA, f = 1 GHz)

NOTE: 1. Maximum Unilateral Gain isGUmax =

|2tii-is |2>
TYPICAL CHARACTERISTICS

0.7
300

z 200

i
$

CE = 6V

5 100

0.3
f = 1M (2

0.2
=

0.1

100

Iq,COUECTOR CURRENT (mA)

VCb, REVERSE VOLTAGE (V)

Figure 2. DC Current Gain versus Collector Current

Rgure 1. Collector-Base Capacitance versus Voltage

i 10

MRF941

"^s
,y

y
yy^

V(jk ~
= ir,n i

'%"*

MMBR941L

Vc = 6V
I = 1GHz

70 100

lC, COUECTOR CURRENT (mA)

lC, COLLECTOR CURRENT (mA)

Rgure 3. Gain Bandwidth Product versus

Figure 4. Insertion Gain versus Collector Current

Collector Current

MOTOROLA RF DEVICE DATA

2-928

100

MRF941, MMBR941L, MRF9411L

FORWARD INSERTION GAIN AND

MAXIMUM UNILATERAL GAIN versus FREQUENCY

"N.v

^r\ V
S3

s\
N

x^
\

ie,. 2V v

SN
0.7

~: io

|s2ii22 ^

0.5

S^v Gl

is ,5

VvK

0.3

<>..

1 5
(9

0.2

0.5

0.7

Rgure 6. MRF941, MRF9411L

Rgure 5. MMBR941L

"~l

Vet "

1
" MRF941

f, FREQUENCY (GHzl

f, FREQUENCY (GHz)

.Vrc - v . . .

0.2

_I25

0.1

v^ > t

V X = 6V...

BR 141

| 12

"f"-mjny<ra^?> y

6 _
5 S

-CIRCUIT -R( URE

-""""UP-

0.3

0.5

0.7

""'

' *1

0.2

Nl min IGHz^*

NF5Mi^

0 z
5

Figure 7. Noise Figure and Associated Gain

Rgure 8. Noise Figure versus Collector Current

versus Frequency

VCE
vbe
D.U.T.

RF INPUT >

-Q-

BIAS

SO 70

lC, COUECTOR CURRENT (mA)

f. FREQUENCY (GHi)

"SLUG TUNER

SLUG TUNER

\}-Q
RIAC
* *

-<RF OUTPUT

'BIAS

NETWORK

HP11590B

MICROLAB/FXR
SF - 11N < 1 GHz

Rgure 9. Functional Circuit Schematic

MOTOROLA RF DEVICE DATA

2-929

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51"

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF942

The RF Line

NPN Silicon

Low Noise, High-Frequency

lC = 40 mA

Transistor

LOW NOISE

HIGH FREQUENCY
TRANSISTOR

... designed for use in high gain, low noise small-signal amplifiers. This device features
excellent broadband linearity and is offered in a metal-ceramic hermetic package suita
ble for high-reliability applications.
Low Noise Figure 1.3 dB Typ (u f = 1.0 GHz
Associated Gain 16 dB Typ <$i f = 1.0 GHz
Fully Implanted Base and Emitter Structure

9 Finger, 1.25 Micron Geometry with Gold Top Metal

High Reliability Processing Available

CASE 303-01

MAXIMUM RATINGS

Ratings

Symbol

Value

UnH
Vdc
Vdc

VCEO

Collector-Base Voltage

VcBO

Emitter-Base Voltage

vebo

1.5

Vdc

300

mWatts

4.0

mW/C
mA

Collector-Emitter Voltage

Power Dissipation (1) (u Tq = 125C

Derate above 125C

Collector Current Continuous (2)

Junction Temperature

200

Storage Temperature

Tstg

-65 to +200

Thermal Resistance, Junction to Case

RtfJC

250

"C/W

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted)

Symbol

Min

Collector-Emitter Breakdown Voltage {\q = 0.1 mA, Iq = 0)

V(BR)CEO

Collector-Base Breakdown Voltage dc = 0-1 mA, lg = 0)

V(BR)CBO

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS (3)

Emitter Cutoff Current (Veb = 1-0 V, Iq = 0)

>EBO

Collector Cutoff Current (Vcb = 10 v- >E = >

'CBO

Vdc
Vdc

0.1

pArtc

0.1

/tAdc

ON CHARACTERISTICS (3)

DCCurrentGain (Vce "= 80 v>'C = 5.0 mA)

hFE

200

DYNAMIC CHARACTERISTICS

Collector-8ase Capacitance (Vcb = 10 V, lg = 0, f = 1.0 MHz)

Ccb

Current Gain Bandwidth Product (Vce = 60 v- 'C = 15 mA>

0.2
8.0

PF
GHz

NOTES: 1. Case Temperature is measured on the collector lead where it first contacts the printed circuit board closest to the package. To calculate t
junction temperature use Tj = Prj x R^jc + TcASE'
2. lc Continuous (MTBF - 10 years)
3. Pulse width 300 ps. duty cycle 2.0% pulsed.

MOTOROLA RF DEVICE DATA

2-933

MRF942

PERFORMANCE CHARACTERISTICS
Conditions

Symbol

Insertion Gain

IS21I2 (VCE = 6.0V, lC = 15mA)

Min

Typ

f = 1.0 GHz

dB
12

PldB

f = 1.0 GHz

1.0 dB Compressed Gain

GldB

f = 1.0 GHz

Minimum Noise Figure

NFmin <VCe = 6.0 V, lc = 3.0 mA)

dBm

NFmin

f = 1.0 GHz

dB
1.3

f = 2.0 GHz
f = 4.0 GHz

1.8

2.0
2.9

Associated Gain

Gnf (VCE = 8.0 V, lC = 5.0 mA)

6.0

Output Power

Gl dB (VCE = 6.0 V, lC = 15 mA)

Units

f = 2.0 GHz
f = 4.0 GHz

p1 dB (Vce = 6.0 V, lc = 15 mA)

Max

IS21I2

GNF

f = 1.0 GHz

dB
14

f = 2.0 GHz

f = 4.0 GHz

8.0

TYPICAL NOISE PARAMETERS

VCE

NFmin

Gnf

(Vdc)

NFson

(mA)

(MHz)

(dB)

(MAG. ANG)

(ohms)

(dB)

1000

1.3

2000

2.0

.37 /. -145

15.5

2.6

4000

2.9

8.0

.50 l. -134

21.5

4.3

.36 L 94

17.5

1.7

1000

2.1

.25 L 150

2.6

2000

2.7

.26^1 -173

16.5

4000

4.3

9.0

.48 L -36

3.1
5.4

TYPICAL CHARACTERISTICS

800

90
z

oc
ec

5e 400
2

1 200
60

3
50

100

150

200

1.5

TC. CASE TEMPERATURE TO

5678910

lC. COLLECTOR CURRENT (mA)

Rgure 1. Maximum Power Dissipation versus

Case Temperature

Rgure 2. DC Current Gain versus Current

MOTOROLA RF DEVICE DATA

2-934

MRF942

--"" "~-

so.)
UJ

I 0.5

C0b

5 0.3

Vce = 6V

i/cb

30 40

lC. COLLECTOR CURRENT ImAI

VOLTAGE IV)

Figure 4. Gain-Bandwidth Product versus

Figure 3. Capacitance versus Voltage

Collector Current

n,
25

GUmax<*

>^s

1 II

1 III

MSG

VCE = 6V

vce = ev
lC = 15mA

"\ ^

N^ \

^S.

|S2llz

^Amax

1 = 1GHz

2 GHz

\
5

v.
\

0.2

0.3

0.5

4 GHz

lC. COLLECTOR CURRENT ImA)

f, FREQUENCY (GHz)

Rgure 6. Insertion Gain versus Current

Rgure 5. Gain versus Frequency

y\=

1 II

VC = 6V
lC = 3 mA

4 GHz

'sJSnf

'>ry
--

2 =

12
u
o

NF50I1 v

^ ' <>

VCE

= 6V

s:=^"

|
1.5

0.2

lC. COLLECTOR CURRENT (mA)

0.5

f, FREQUENCY (GHz)

Figure 8. Noise Figure and Associated Gain

Figure 7. Minimum Noise Figure versus Current

versus Frequency

MOTOROLA RF DEVICE DATA

2-935

MRF942

^__

f = 1 GHz
EH

1= 1.'2.4 GHz

""*
2 GHz

SI
Is

^ SB '
f

4 GHz
L

>1dB
IdB-

Vce = 6V

lC. COLLECTOR CURRENT

Vc = 6V
lC = 3mA

Rgure 9. Output Power and 1 dB Gain

Compression versus Current

f = 1000 MHz

0 - AREAOFINSTABILITY

Rgure 10. Gain and Noise Rgure Contours

f = 1 GHz

vCE = ev
lC = 3 mA
f = 4000 MHz

]-AREA OFINSTABILITY

Rgure 11. Gain and Noise Rgure Contours

Rgure 12. Gain and Noise Rgure Contours

f = 2 GHz

f = 4 GHz

vce
vbe
OUT.

RFINPUT >

e-tn
BIAS

TUNER

NETWORK

TUNER

Rgure 13. Functional Circuit Schematic

MOTOROLA RF DEVICE DATA

2-936

^-Q
BIAS

NETWORK

< RF OUTPUT

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MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF951
The RF Line

MMBR951L
MRF9511L

NPN Silicon

Low Noise, High-Frequency

Transistors

lC = 100 mA
LOW NOISE
HIGH FREQUENCY

... designed for use in high gain, low noise small-signal amplifiers. This series features

TRANSISTORS

excellent broadband linearity and is offered in a variety of packages.

Fully Implanted Base and Emitter Structure

18 Finger, 1.25 Micron Geometry with Gold Top Metal

Gold Sintered Back Metal

Tape and Reel Packaging Options Available

CASE 31701, STYLE 2
MACRO-X
MRF951

MAXIMUM RATINGS
Ratings

Symbol

MRF951

MMBR951L

MRF9511L

Collecior-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

vCBO

Vdc

Emitter-Base Voltage

Vebo

1.5

Vdc

Unit

Power Dissipation'1)

0.58

0.5

Watts

Collector Current Continuous'^)

100

Tjmax

150

Storage Temperature

Tstg

-65to +150

-65 to +150

Thermal Resistance, Junction to Case

RJC

100

130

=CW

Maximum Junction Temperature

65 to i 150

130

CASE 318-07. STYLE 6

SOT-23
LOW PROFILE
MMBR951L

CASE 318A-05. STYLE 1

DEVICE MARKING
MRF9511L =

SOT-143
LOW PROFILE

MRF9511L

ELECTRICAL CHARACTERISTICS (Tc = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS^)

Collector-Emitter Breakdown Voltage (Irj

0.1 mA. \q = 0)

Collector-Base Breakdown Voltage dc = 0.1 mA. Irr 01

Emitter Cutoff Current (Veb = 1 V, lc = 0)

Collector Cutoff Current (Vcb = 10 V. Ip.

v(BR)CEO

i:i

v(BR)CBO

!EBO

'CBO

Vdc
Vdc

0.1

nAdc

0.1

/iAdc

200

ON CHARACTERISTICS^)

DCCurrent Gain (Vce -6V,lc" 5 mA)

hpE

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance (Vcb

10 V,Iff = 0, f = 1 MHz)

Current Gain'4' Bandwidth Product (Vce

8 v- !C

Ccb

30 mA- f = 1 GH'>

0.45

8
GHz
'T
NOTES: 1. Case Temperature is measured on the colleclor lead where it lirsl contacts the printed circuit board closest to the package. To calculate the

junctiontemperature use Tj

Pq x Rjc * TrjAgg.

2. lc Continuous IMTBF =- 10 years)

3. Pulse width - 300 /is. duty cycle - 2o pulsed.

MOTOROLA RF DEVICE DATA

2-938

MRF951, MMBR951L, MRF9511L

PERFORMANCE CHARACTERISTICS
MRF9511L

MRF9S1

MMBR951L
Unite

Symbol

Conditions

Typ

Min

Typ

Min

Max

Min

Max

Typ

Max
dB

IS21I2

Insertion Gain

(Vce = 8 V. lc = 30 mA, f = 1 GHz)

(Vce = 8 V, lc = 30 mA, f = 2 GHz)

14.5

12.5

9.5

Maximum Unilateral Gain'D

(Vce = 8 V, lc = 30 mA, f = 1 GHz)
(VCe = 8 V, lc = 30 mA, f = 2 GHz)

GUmax
17

10.5

Noise Figure Minimum

nfmin.

(Vce = 6 V, lc = 5 mA, f = 1 GHz)

(Vce = 6 V, lc = 5 mA, f = 2 GHz)

1.3

2.1

Associated Gain at Minimum NF

Gnf

(Vce = 6 V, lc = 5 mA, f = 1 GHz)

(Vce = 6 V, lc = 5 mA, f = 2 GHz)

NF50n

1.9

2.8

1.9

7.5

Noise Figure 50 Ohm Source

1.9

2.8

(Vce = 6 V, lc = 5 mA, f = 1 GHz)

J|2lJ?

NOTE: 1. Maximum Unilateral Gain is GUmax

CI - IS, ll2l(1-|S22lz)

TYPICAL CHARACTERISTICS

VCE = 8V

f = 1M Hz

200

c 100
0

X 50

jf
20
10

100

VCB, REVERSE VOLTAGE (V)

lC. COLLECTOR CURRENT (mA)

Rgure 1. Collector-Base Capacitance versus Voltage

Rgure 2. DC Current Gain versus Collector Current

MRF951
MRF9f 111

/MMBR951L

CM*
CM

yCt

11
2

VfF =

t V
1 = IGrit

1 1

70 100

lC. COLLECTOR CURRENT ImA)

70 100

lC. COLLECTOR CURRENT (mA)

Rgure 4. Insertion Gain versus Collector Current

Rgure 3. Gain Bandwidth Product versus

Collector Current

MOTOROLA RF DEVICE DATA

2-939

<
0

en a

jar

ii-

i i

' >

a "

II m

.jsj 11 .

t 1
Ky

3D 3D

Sea

o 2.

<<2

\ 5

^SSS
t % m 5>

Ar\ '-*':

OilO

t\ A

8 _t v\f: "111"

! I\l 1

S n

/ 7 7 rx i1

<5Z

Jj~
'/
Tl^-

IS21I2. INSERTION GAIN (dB)

O
Z

NF.NOISEFIGURE {dB!

lep) aanou 3SI0N'dN

GUmax. MAXIMUM UNIUTERAL GAIN (dB)

3
a'

CD
C

-t

Q -

31a

IS21I2, INSERTION GAIN (dB!

GUmax. MAXIMUM UNIUTERAL GAIN IdB)

0
3

n
e

GNF. ASSOCIATED GAIN ATMINIMUM NF (dB|

O
-<

C2
rn 0

m 2

3
2 O
2;

OZ
J> 0)

r?5

15
c"

i_k

n
CO
Ol

CO
Ol

CD
33

2
2

MRF951, MMBR951L, MRF9511L

MRF951

TYPICAL COMMON EMITTERS-PARAMETERS

Sll

S22

Sl2

S21

vce

(Vdc)

(mA)

(MHz)

Pill

IS21I

IS12I

t-4

|S22l

100

0.81

-36

13.89

156

0.03

0.94

L*
-17

-46

500

0.58

-122

7.23

105

0.07

0.55

1000

0.53

-165

4.06

0.08

0.42

-57

1500

0.54

172

2.78

0.10

0.40

-67

2000

0.55

155

0.12

0.40

-79

2500

0.56

140

2.13
1.74

0.15

0.41

-92

3000

0.59

127

1.46

0.18

0.43

-105

3500

115

1.28

0.22

0.45

-119

4000

0.61
0.62

1.13

-1

0.26

0.48

-132

100

0.67

-41

22.99

147

0.02

0.86

-26

500

0.50

-85

8.94

0.05

0.41

-53

1000

0.48

-34

4.75

0.08

49
54

0.31

-61

1500

0.49

163

3.26

0.11

0.29

-71

2000

0.51

148

2.47

0.14

0.30

-83

2500

104

0.52

135

2.03

0.17

0.31

-97

3000

0.55

123

1.72

0.34

-109

0.56

112

1.50

0.20
0.24

3500

0.36

-122

4000

0.59

101

1.33

0.28

0.39

-135

100

0.52

-77

32.50

137

0.02

0.75

-34

-96
172

10.00

0.05

0.30

-56

5.20
3.50
2.70
2.20
1.90
1.60

0.08

0.24

0.11

0.24

-74

0.15

0.24

-86
-100

500

0.46

1000

0.47

1500

0.48

156
143

2000
2500

0.49
0.51

131

3000

0.53

121

3500

0.55

110
100

-63

0.18

0.26

0.22

0.29

-112

0.25

-125
-137

4000

0.57

1.40

0.28

0.31
0.34

100

0.45

-95

36.80

132

0.68

-38

500

0.46

-170

10.20

0.02
0.04

0.27

-55

1000

-62

0.47

169

5.30

0.08

0.22

1500

0.48

154

3.60

0.11

0.22

-73

2000

0.50

2.80

0.15

0.23

-86

2500

0.51

142
132

2.30

0.18

0.25

-97

3000

0.53

119

1.90

0.22

0.28

-113

3500

109

1.60

0.25

0.30

-125

4000

0.55
0.57

1.50

0.29

0.33

-137

100

0.41

-129

38.90

123

0.58

-40

500

0.49

-35

9.70

0.01
0.04

0.26

-44

1000
1500
2000
2500

0.50

164

4.90

0.07

0.24

-53

0.52

151

3.30

0.11

0.24

-66

0.53

140

2.50

0.15

0.26

-79

0.55

128

2.10

0.18

0.28

-94

3000

0.57

118

1.70

0.21

0.31

-108

3500

0.59

108

1.50

0.25

0.33

-121

4000

0.61

1.30

0.29

0.36

-134
(continued)

MOTOROLA RF DEVICE DATA

2-941

MRF951, MMBR951L, MRF9511L

MRF951

TYPICAL COMMON EMITTER S-PARAMETERS (continued)

S11

S21

S22

vCE

(Vdc)

(mA)

(MHz)

IS11I

IS21I

*-<*>

IS12I

<-*

IS22I

Z.(f>

100

0.82

-34

13.71

157

0.03

0.94

-16

500

0.59

-119

7.35

106

0.07

0.57

-44

1000

0.52

-162

4.14

0.08

0.44

-54

1500

0.52

174

2.86

0.10

0.41

-65

2000

0.54

156

2.19

0.12

0.41

-76

2500

-90

0.55

141

1.78

0.15

0.42

3000

0.58

128

1.49

0.18

0.45

-103

3500

0.59

116

1.31

0.22

0.47

-116

4000

0.62

104

1.15

-1

0.26

0.50

-129

100

0.68

-50

23.16

148

0.02

0.86

-24
-49

500

0.49

-142

9.19

0.05

0.43

1000

0.47

-177

4.87

0.07

0.33

-56

1500
2000

0.48

164

3.33

0.10

0.32

-66

0.50

149

2.56

0.13

0.32

-77

2500

0.51

136

2.08

0.16

0.34

-91

3000

0.54

124

1.76

0.20

0.36

-103

3500

0.55

113

1.54

0.23

0.38

-117

4000

0.58

103

1.36

0.27

0.41

-129

100

0.53

-73

32.78

138

0.02

0.76

-32

500

0.45

-160

10.25

0.04

0.33

-50

1000

174

5.33

0.07

0.27

-57

1500

0.46

161

3.96

0.10

2000

0.48

144

2.74

0.14

0.26
0.27

-79

2500

132

2.24

0.17

0.29

-93

3000

0.50
0.52

121

1.90

0.21

0.31

-106

3500

0.54

111

1.66

0.24

0.33

-118

4000

0.56

101

1.48

0.28

42
37

0.36

-131

100

-90

37.27

132

0.01

0.70

-36

-65

500

0.45
0.45

-102

10.50

0.04

0.30

-48

1000

0.45

170

5.41

0.07

0.47

155

0.11

2000

0.48
0.50

142

3.66
2.81

0.25
0.25

-55

1500

0.14

131

2.27

0.18

3000

0.52

120

1.93

0.21

3500

0.54

110

1.69

4000

0.56

100

1.50

100

0.42

-124

38.02

2500

0.45

-66

0.26
0.27

-92

49
43

0.30

-105

0.25

0.32

-118

0.28

0.35

-131

124

0.01

0.60

-35

-78

500

0.49

-106

9.54

0.04

0.31

-38

1000

0.50

165

4.92

0.07

0.29

-47

1500

0.51

152

3.36

0.10

-60

2000

0.52

140

2.55

0.14

0.29
0.30

2500

0.54

129

2.08

0.17

3000

0.56

118

1.76

0.21

-74

0.32
0.34

-102

-88

3500

0.58

108

1.53

0.24

0.37

-116

4000

0.61

1.35

0.28

0.39

-129

MOTOROLA RF DEVICE DATA

2-942

MRF951, MMBR951L, MRF9511L

MMBR951L

COMMON EMITTER S-PARAMETERS

S22

S12

S21

S11

vCE

(Volts)

(mA)

(MHz)

Pill

*-4>

IS21I

|SI

IS22I

*-4>

100

0.82

-36.6

14.0

153

0.04

44.7

0.88

-18.2

500

0.50

-119

6.6

104

0.07

48.2

0.52

-40

1000

0.39

-162

3.5

0.11

0.43

-43

1.9

0.21

0.42

-50

2000

0.32

150

3000

0.36

110

100

0.66

-54

0.31

0.40

-67

142

0.78

-29

0.40
0.34

-47

500

0.38

-138

7.8

0.03
0.07

1000
2000

0.32

-176

4.0

0.13

0.26

142

2.2

0.22

-46

0.31

105

1.6

0.32

70
64

0.36

3000

0.33

-62

100

0.49

-76

131

0.01

0.67

-37

500

0.32

-153

8.3

0.08

0.34

-39

1000
2000

0.29
0.24

175

4.3

0.11

0.29

-44

137

2.3

0.24

0.32

-48

3000

0.28

102

1.6

0.34

0.29

-60

100

0.40

-94

125

0.03

0.58

-42

500

0.30

-162

8.4

0.07

87
84

0.31

-35

0.12

0.27

-39

-42

0.29

170

4.3

2000

0.24

134

2.3

0.23

0.33

-48

3000

0.30

101

1.6

0.35

0.30

-60

100

0.38

-126

116

0.03

0.49

-37

SOO

0.37

-176

77.6

0.05

0.34

-26

1000

0.36

73.4

0.12

0.34

-37

2000

0.33

163
130

7.3
3.7
2.0

0.22

0.37

-48

0.34

-62

0.04

0.90

-19

1000

1.4

22.6

3000

0.38

1.4

100

0.83

-35

13.9

154

500

0.51

-117

6.7

104

0.08

0.38

-160

3.6

0.10

0.55
0.44

-38

1000
2000

0.31

151

1.9

0.20

0.46

-47

3000

0.35

110

1.4

0.32

0.43

-63

100

0.67

143

0.02

0.81

-28

-38

-52

-42

500

0.37

-135

23
7.9

0.07

0.43

1000
2000

0.30

-173

4.1

0.11

0.37

-41

0.25

143

2.2

0.21

-47

3000

0.30

105

1.6

0.31

0.38
0.34

100

0.S1

-72

0.02

500

0.31

-150

8.5

131
92

0.07

-60

0.68
0.36

-35
-36

1000

0.28

177

4.3

0.13

0.32

-39

2000

0.23

138

2.3

0.22

0.35

-45

3000

0.27

103

1.6

0.31

-58

100

0.42

-87

125

0.02

0.61

-38
-33

500

0.31

0.07

0.33

0.27

-159
172

8.6

1000

4.4

0.11

0.32

-39

2000

0.23

135

2.3

0.22

0.34

-42

3000

0.28

102

1.6

0.31

0.33

-55

100

0.39

-119

117

0.02

0.52

-31

500

0.36

-174

32
7.4

0.06

0.37

-25

1000

0.35

164

3.8

0.11

0.35

-33

2000

0.32

131

2.0

0.22

0.42

-41

3000

0.37

100

1.4

0.33

0.40

-62

MOTOROLA RF DEVICE DATA

2-943

MRF951, MMBR951L, MRF9511L

MRF9511L

TYPICAL COMMON EMITTER S-PARAMETERS

Sl1

S21

S22

vce

(Vdc)

(mA)

(MHz)

IS11I

<-4>

|S2ll

IS12I

i-4>

IS22I

<-+

100

0.81

-48

13.69

152

0.04

0.88

-22

500

0.67

-122

7.58

0.07

0.57

-50

1000
1500

0.61

-157

4.65

0.09

0.45

-62

0.57

2.87

0.10

0.42

-71

2000

0.54

156

2.14

0.12

0.42

-75

2500

121

1.72

0.40

3000

0.55
0.57

121

1.48

0.17

0.39

-86
-97

3500

0.65

110

1.28

0.37

-112

4000

0.67

100

1.14

0.21
0.24

0.38

-130

100

0.71

24.07

149

-28

0.86
0.41

0.30

-73

-56

0.14

500

0.60

-143

9.47

101

0.03
0.05

1000

0.56

-176

4.97

0.07

1500

0.53

167

3.35

0.10

2000

0.50
0.52

148

2.54

0.13

0.30

-78

2500

132

2.02

0.16

0.29

-89

3000

0.54

116

1.75

0.19

0.29

-78

3500

106

1.53

0.22

-115

1.35

0.26

60
57

0.26

4000

0.60
0.64

0.28

-133

100

0.59

-80

33.51

138

0.75

-38

500

-159

10.39

0.31

-69

175

5.36

95
79

1000

0.56
0.54

0.02
0.04
0.07

0.23

-79

1500

0.51

161

3.58

0.10

0.25

-82

2000

0.49

142

2.75

0.13

0.25

-80

2500

0.52

128

2.18

0.16

0.23

-91

3000

0.53

112

1.88

0.20
0.24

0.23

-99

0.21

-117

0.27

0.22

-137

0.02

0.67

-43

3500

0.60

103

1.65

4000

0.63

1.46

39
34

100

0.54

-97

37.48

133

0.31

-62
-78

500

0.56

-166

10.60

0.04

0.27

-70

1000

0.54

171

5.45

0.07

0.21

-80

1500

0.51

158

3.62

0.10

0.24

-81

2000

0.50

140

2.73

0.13

0.23

-79

2500

0.52

126

2.19

0.17

0.23

-90

3000

0.53

111

1.89

0.20

0.23

-97

3500

0.60

102

1.65

0.24

0.20

4000

0.63

1.47

0.27

0.22

-115
-136

100

0.54

-128

36.66

123

0.01

500

0.60

-177

8.97

0.03

0.56
0.27

-50

1000

0.59

166

4.62

0.06

0.25

-59

1500

0.56

153

3.05

0.09

0.29

-68

-43

2000

0.55

136

2.29

0.13

0.30

-71

2500

0.57

125

1.85

0.16

0.29

-83

3000

0.59

110

1.59

0.20

-92

3500

0.65

102

1.41

0.69

1.22

0.23
0.27

0.30
0.27

0.29

-130

j 4000

-108

(continued)

MOTOROLA RF DEVICE DATA

2-944

MRF951, MMBR951L, MRF9511L

MRF9511L

TYPICAL COMMON EMITTER S-PARAMETERS (continued)

S22

S12

S21

S11

vce

IVdc)

(mA)

(MHz)

ISnl

IS21I

IS12I

IS22I

t-*

100

0.84

-36

14.65

158

-18

0.94
0.58
0.44
0.44
0.44
0.42
0.42
0.38
0.36

-48
-60
-68
-71
-82
-92
-107
-125

1500

0.56

2.95

2000

0.53

157

2.19

2500

0.55

140

1.76

3000
3500

0.56

122

1.50

0.63

112

1.33

4000

0.68

105

1.18

0.03
0.07
0.08
0.10
0.11
0.14
0.17
0.18
0.21

SOO

0.68

-120

0.60

-161

7.79
4.32

110

1000

41
45
53
58
60

100

0.73

-53

24.04

150

0.02

0.87

-26

0.60

-140

9.68

101

0.43

1000

-174

5.10

0.32

1500

0.55
0.52

0.05
0.07

169

3.42

0.09

2000

0.49

149

2.59

0.12

0.33
0.33
0.32
0.32
0.28
0.29

-58
-66
-72
-73
-83
-91
-108
-131
-36

2500

0.51

133

2.06

0.15

3000

0.53

116

1.78

0.19

0.20

3500

0.64

109

1.60

4000

0.67

101

1.39

0.23

100

0.61

-76

0.02

-157

0.04

60
54

0.76

0.56

33.76
10.72

139

500
1000

0.53

176
162

5.53

0.07

0.29

-70

0.10

0.27

-75

0.27

-74

2000

0.48

143

3.69
2.79

0.51

129

2.22

60
52

0.13

2500

0.16

0.52

112

1.92

0.19

0.50

0.32

-63

-84

3500

0.59

104

1.75

0.21

4000

0.63

1.54

0.24

0.26
0.26
0.24
0.25

100

0.57

-89

134

0.02

0.71

-40

500

0.55

-163

37.35
10.82

0.04

0.29

1000

0.53

128

5.54

0.07

0.24

0.10

0.26

-63
-69
-73
-71
-82
-89
-110

3000

500

1500

0.50

2000

0.49

141

3.69
2.77

0.13

0.27

2500

0.51

127

2.23

0.16

3000

0.52

112

1.93

0.19

159

-91
-109
-131

3500

0.61

106

1.68

0.21

66
64

4000

0.66

1.51

0.24

0.26
0.26
0.21
0.23

100

0.55

-122

34.92

126

0.01

0.59

-37

0.03
0.06
0.09
0.12
0.16
0.19
0.22
0.26

-42

0.33
0.30
0.34
0.35
0.34

0.35

-88

0.32

-105

0.32

-132

500

0.59

0.58

-175
167

8.71

1000

4.52

1500

0.55

154

3.04

2000

0.54

2.28

2500
3000
3500

0.57

138
125
110
104
95

1.82

1.56

1.28

4000

0.59
0.66

0.70

1.14

MOTOROLA RF DEVICE DATA

2-945

73
75

-130

-53
-62
-66
-78

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF952

The RF Line

NPN Silicon

Low Noise, High-Frequency

Transistor

lC = 75 mA
LOW NOISE
HIGH FREQUENCY

... designed for use in high gain, low noise small-signal amplifiers. This device features
excellent broadband linearity and is offered in a metal-ceramic hermetic package suita

TRANSISTOR

ble for high-reliability applications.

Low Noise Figure 1.3 dB Typ <ci f = 1.0 GHz
Associated Gain 16 dB Typ (it f = 1.0 GHz

High Output Power 20 dBm Typ (a 1.0 dB Compression, f = 1.0 GHz

Fully Implanted Base and Emitter Structure

18 Finger, 1.25 Micron Geometry with Gold Top Metal

High Reliability Processing Available

CASE 303-01

MAXIMUM RATINGS
Ratings

Symbol

Value

Collector-Emitter Voltage

VcEO

Vdc

Collector-Base Voltage

VcbO

Vdc

Emitter-Base Voltage

VEBO

1.5

Vdc

Power Dissipation (1)

600

mWatts

Derate above 125C

Unit

8.0

rnVWT

Collector Current Continuous (2)

Junction Temperature

200

Storage Temperature

Tstg

-65 to +200

Thermal Resistance Minimum, Junction to Case

Rejc

125

"OW

Symbol

Typ

ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwisenoted)

Characteristic

Max

Unit

OFF CHARACTERISTICS (3)

Collector-EmitterBreakdown Voltage dc = 0.1 mA, Ib = 0)

v(BR)CEO

Collector-Base Breakdown Voltage (Iq = 0.1 mA, lg = 0)

V(BR)CBO

Emitter Cutoff Current (VgB = 10 V, Iq = 0)

>EBO

Collector Cutoff Current (Vcb = 10 V, Ip: = 0)

'CBO

Vdc

0.1

/xAdc

0.1

pAdc

ON CHARACTERISTICS (3)

DC Current Gain (Vce = 8-0 v- 'C = 5.0 mA)

"FE

DYNAMIC CHARACTERISTICS

Collector-Base Capacitance (Vcb = 10 V, Ie. = 0. f = 1.0 MHz)

Ccb

Current Gain Bandwidth Product (Vce = 80 v> 'C = 30 mA, f =

1.0 GHz)

0.36

8.0
*T
NOTES: 1. Case Temperature is measured on the collector lead where it first contacts the printed circuit board closest to the package. To calculate I
junction temperature use Tj = Pp x Rgjc + TCASE-

2. lc Continuous (MTBF - 10 years)

3. Pulse width * 300 ps, duty cycle 2.0% pulsed.

MOTOROLA RF DEVICE DATA

2-946

pF
GHz

MRF952

PERFORMANCE CHARACTERISTICS

Symbol

Conditions

Units

Max

Typ

Min

IS21I2

Insertion Gain (1)

IS21I2 (Vce = 8.0 V, lC = 30 mA)

f = 1.0 GHz

f = 2.0 GHz
f = 4.0 GHz

Output Power

PldB

dBm

GldB

f = 1.0 GHz

Pi dB (VCE = 8.0 V, lc = 30 mA)

1.0 dB Gain Compression (2)

f = 1.0 GHz

Gl dB <VCE " 80 V, lc = 30 mA)

Minimum Noise Figure

NFmin (Vce = 8.0 V,lc = 5.0 mA)

f = 1.0 GHz

1.3

f = 2.0 GHz

2.0

f = 4.0 GHz

2.6

Associated Gain (3)

1.8

Gnf
14.5

f = 1.0 GHz

Gnf (Vce = 8.0 V, lC = 5.0 mA)

f = 2.0 GHz

f = 4.0 GHz

TYPICAL NOISE PARAMETERS

To
(MAG, ANG)

NFson

(ohms)

(dB)

vce

NFmin

GNF

(Vdc)

(mA)

(MHz)

(dB)

1000

1.3

.30 L 130

7.5

1.7

2000

2.0

2.9

4000

2.6

.40 L -179
.67 L -104

5.2

1000

1.4

.29 L 148

7.0

1.8

2000

2.1

.38 L -173
.66 L -100

11.5

3.0

47.5

5.3

2.8

4000

(1) In SO Ohm-System, Unmatched.

(2) In 50 Ohm System, Input and Output Tuned for Max. Gain.

(3) In SOOhm System, Input and Output Tuned for Max. Gain with Min. Noise Figure.

TYPICAL CHARACTERISTICS

150

f
z
0

130

5j 600

110

*"*

S 400
2

VCE = 8V

I 20
IA
a
a.

100

150

T&OSE TEMPERATURE ft)

lf> COLLECTOR CURRENT (mA)

Rgure 1. Maximum Power Dissipation versus

Case Temperature

Figure 2. DC Current Gain versus Current

MOTOROLA RF DEVICE DATA

2-947

MRF952

TYPICAL CHARACTERISTICS

1(1

-.^

0.5

-. cb
d

3
2

VCE

J
5

VCD. COLLECTOR-TO-BASE VOLTAGE (VI

70 1

Irj, COLLECTOR CURRENT (mA)

Rgure 3. Collector-Base Capacitance versus Voltage

Rgure 4. Typical Gain-Bandwidth Product versus

Collector Current

III

s:
s

s - >.
V s

1 III

VfF == 8V
ic = 30 mA

GUmax

Vce = 8V

III

I 16

"n\

GAmax
X^ Sv^

J = 1GHz
^s

^lll

P2 ir

^ S, \
0

0.1

0.5

f, FREQUENCY (GHz)

y
3

lC, COLLECTOR CURRENT ImA)

Figure 5. Gain versus Frequency

Rgure 6. Insertion Gain versus Current

I II

111

-vce = sv -

-vcg = 8V
-ic

NF ji

s
X

*f"

--6 g

s
R
4

-S^NF

0
ai

'I
111

--4

NF mr

9.
tn

NF50H

z
o

-H

NFmir

~~2 O
.-0 z
10

0 1

f, FREQLIENCYIC Hz)

f. FREQUENCY3Hzl

Figure 7. Iq = 5 mA

Rgure 8. lc = 10 mA

Noise Rgure and Associated Gain versus Frequency

MOTOROLA RF DEVICE DATA

2-948

.i'^~*~

MRF952

11 ii
Vce = 8V -

iGHi

f = 2GHz

rf
;s 12

,^-

2 GHz

II
1 GHz

s
.

GMb

I
10

--
1

rl jgfii 1.2.4GH2

lC. COLLECTOR CURRENT ImAI

lC. COLLECTOR CURRENT (mA)

Figure 10. Minimum Noise Figure versus Current

Rgure 9. Output Power and 1 dB Gain Compression

versus Current and Frequency

vce

vbe
O.U.T.

E=>-e-< RF OUTPUT
RF INPUT >

eerr
BIAS
NETWORK

TUNER

BIAS
NETWORK

Figure 11. Functional Circuit Schematic

Rgure 12. Typical Common Emitter S-Parameters

(Vdc)

(mA)

(MHz)

ISnl

t-4>

100

0.85

Bail

C<S>

IS12I

t-4>

|S22l

-32

15.1

160

0.02

-13

200

0.82

-61

13.6

143

0.04

0.96
0.87

400

0.76

-101

10.0

119

0.06

0.69

-37

600

0.73

-127

7.5

104

0.06

0.58

-43

800

0.71

-142

5.9

0.06

33
27

-51

0.53

-24

-47

-155

4.9

0.07

0.48

0.69

-173

3.3

0.07

0.46

-59

2000

0.69

0.07

0.46

-68

0.69

173
164

2.5

2500

2.1

0.08

0.47

-76

3000
3500

0.69

154

1.7

0.08

0.49

-85

0.69

145

1.5

0.08

0.52

-95

4000

0.69
0.70

134

1.3

0.10

0.55

-104

126

1.2

0.10

0.67

0.70

117

1.1

-10

0.11

0.59

-122

5500

0.70

108

0.9

-19

0.62

-130

6000

0.70

0.9

-28

0.13
0.14

0.65

-138

100
200

0.72

-49

25.5

155

0.02

0.92

-19

0.67

-87

20.3

135

0.03

0.78

-32

1000

1500

4500
5000

S22

S21

VCE

0.70

MOTOROLA RF DEVICE DATA

2-949

-113

ssgsissssssii
Q

01 "

IJIOUIOS

sssss

NNUUH& 6
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pppppppooopppppp

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cocoro-OCoco-JCocn6ooovjcno>->

->->->_>->cococO'oa>cntncnui.t^(o

fs) co tn

>iouoi n

OI->0OlUOOgOIOIOIO)OMOIM

-*----i9oocootoifc&fcft^(>

o> i. o o i a n o ( - , w S m

63 o

oivibi>buuuuMioiouu^b>

ppppppppppppppoo
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pppppppppppppppp
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Ep-'MMUAUlUlOlMOIJ^Oli-'

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UUNK)-'->

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Sg a>

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ro co -

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ro O

CO co fo -

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_._,_._._iCOCOO0-J

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I
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CO
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blb'&6UUUUUMUUUft'

oooooooooooooooo

J Ol {k 10 -

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->->->->->roroioco&0)CD
o

rocofetoi^bco^jktk^b^

O;^is>co&oio>^*5o)oiioosio
MUlb-'O00O>UlUlMUl^vl

0)0>0>030>0>0>0>0>0>OIO>0>0>0>
vj sj >J M M M o
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pppppppppooooo

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co co co

S355a*a*22*Bft.

ppppppppoooooo
?155',?&*:ft<kco(dwirikoi

ro ro co ro CO
co j - co N>

0)Oiwro-*iooo>JO>oiSSoiS

> ^ ^ b b b b b b b b b

roco&-'(>->cnoo-o'viobS^

MO.-'NUUOlOlOl^eim^M

OIO>CDC0'sJ&>J>J^o->a000vJ

ppppppppppppoo

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SSooo000

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o

MRF961
MRF962
MRF965

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

(See BFR96)

The RF Line

MRF966

N-Channel Dual-Gate GaAs

Field-Effect Transistor

MRFC966

... depletion mode dual-gate MES FET designed for high frequency amplifier

N-CHANNEL

and mixer applications.

DUAL-GATE

Excellent Receiver Front End

GaAs FIELD-EFFECT

Low Noise Figure NF = 1.2 dB, 1 GHz (Typ)

TRANSISTOR

High Power Gain Gp = 17 dB, 1 GHz (Typ)

Low Reverse Transfer Capacitance Crss = 40 fF (Typ)
High Transconductance gm = 20 mS (Typ)
Fully Characterized

Gold Metallization

MAXIMUM RATINGS
Symbol

MRFC966

MRF966

Unit

VDS

Vdc

Gate-Source Voltage Reverse

VG1S

-8

Vdc

VG2S

-8

Gate-Source Voltage Forward

VG1S
VG2S

+ 1

Rating
Drain-Source Voltage

Vdc

mAdc

Drain Current Continuous

Total Power Dissipation ( Ta = 25"C

350

Tj = 125'CMax

3.5

mW/C

Tstg

-65to 125

-65 to ' 125

-65 to t 125

-65 to 125

Symbol

Min

V(BR)DSX

vG1S(off)

-2

Derate above 25CC

Storage Channel Temperature Range

Junction Temperature Range

MRF966

CASE 317-01, STYLE 1

CHIP
MRFC966

ELECTRICAL CHARACTERISTICS (TA - 25C unless otherwise noted.

Characteristic

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Vdc

(VG1S = VG2S = -4.5 Vdc, lD = 100 pA)

Gate 1-to-Source Cutoff Voltage (Vds = 5 vdc- VG2S -

-4.5

Vdc

-4.5

Vdc

ID = 500 nA)

Gate 2-to-Source Cutoff Voltage (Vds = 5Vdc, Vqis n,

VG2S(off)

Iq = 500 pA)
-

/iAdc

jiAdc

'DSS

mAdc

Gate 1 Leakage Current (Vqis = - 5 Vdc, VQ2S = ^DS = )

IG1SS

Gate 2 Leakage Current (Vq2S = ~ 5 Vdc' VG1S = VDS = '

!G2SS

ON CHARACTERISTICS

Zero-Gate Voltage Drain Current

(vDs = 5 vdc. vG is = vG2S = 0)

SMALL-SIGNAL CHARACTERISTICS

Transconductance

(Vds = 5 Vdc, VQ2S = 0. ID = 10 mA. f - 1 kHz)

Input Capacitance

Cjss

1.5

(VDS = 5 Vdc, VQ2S = 0, lD = 10 mA. f = 1 MHz)

Roverse Transfer Capacitance

Crss

(Vds = 5 Vdc. VG2S = 0. Id = 10 mA. f = 1 MHz)

Handling and Packaging MES devices are susceptible to damage from electrostatic :harge.
Reasonable precautions in handling and packaging MES devices should bo observed.

MOTOROLA RF DEVICE DATA

2-951

0.04

MRF966, MRFC966
ELECTRICAL CHARACTERISTICS continued (Ta = 25c ""'ess otherwise noted.)
Characteristic

Symbol

Min

Typ

Max

UnH

1.2

1.5

FUNCTIONAL CHARACTERISTICS

Noise Figured)

(Vqs = 5 Vdc. VQ2S = 0. 'OS = 10 mA, f = 1 GHz)

Common Source Power Gaind)

GpS

(Vqs = 5 Vdc, VQ2S = - 'DS = 10 mA, f = 1 GHz)

Intermodulation Distortion

IMD3

-65

(Vos = 5 Vdc, Iqs = 10 mA,

fl = 995 MHz, f 2 = 1001 MHz,VG2 = 0, Pin = -40 dBm)
Linear Power Point(2)

(Vqs = 5 Vdc, Ids = 10 mA,

fl = 995 MHz, f2 = 1001 MHz,Vq2 = 0)
Output Power at 1 dB Compression Point

+ 1

pout

(VDS = 5 Vdc, Ids = 10 mA, f = I GHz)

dBm

NOTES:

1. Data taken usinga 500 test fixture, Microlab SF31N slugtuners, HP11590B bias notworks andthe HP8970A or Eaton 2075 noisefigure meter.
Note: VQ2S - 0. Refer to Figure 11.

2. Thelinear power point istheoutput power level atwhich either thesignal 2fi i (2or#2 1 fi are 30dBbelow f1orf2TYPICAL CHARACTERISTICS
100

100

V62S = ov

_ 80

vos

1 70
60

v J1S =

+ 1V
+ 0.5V
ov
-0.5 V
-IV

so
CJ

I 40
I 30

-1.5 V
-2V

= 5V

1 70
if,
w
a=

^G2 0 OV
^-0 5

| w

I40 "^7
s"

% 30
20

-2.5 V
10

10
-3V

-0.4 -0.8 -1.2 -1.6

-2

-2.4 -2.8 -3.2

-3.6

vr>s. drain-to-source voltage ivoltsi

Vgis. GATE ONE-TO-SOURCE VOLTAGE

Figure 1. DrainCurrent versus Drain-To-SourceVoltage

Rgure 2. Drain Current versus Gate One-To-Source

Voltage

-"""

GpSf = 1 GHz

Vds = 5V

I = 1GHz

ids
VG2

VGS2 = 0V

= 10 tiA

VgsiAOJUSTEOTOSET

= 0V

'OSS
NF

0123456789

Vns. DRAIN-TO-SOURCE VOLTAGE

PERCENT OF loss

Hgure 3. Power Gain and Noise Figure versus

Rgure 4. Power Gain and Noise Rgure versus

Percent of loss

Drain-To-Source Voltage

MOTOROLA RF DEVICE DATA

2-952

MRF966, MRFC966

TYPICAL CHARACTERISTICS

1000

1500

(.FREQUENCY (MHz)

f, FREQUENCY (MHz)

Rgure 5. Power Gain and Noise Rgure

Figure 6. Maximum Available Gain and Stability

versus Frequency

Factor versus Frequency

v0s = 5V

1
2

)S = 5 v
= 10

f = 500 MHz

ids =10mA

1 = 1GrIz

I -5

3-10
-15

-20
-25

-5

-35

-30

-25

-20

-15

-10

-5

Pin. INPUT POWER (dBm)

. INPUT POWER IdBmi

Rgure 8. Output Power versus Input Power @ 1 GHz

Rgure 7. Output Power versus Input Power

@ SOO MHz

30
20

1
1

Fundamental-

_***

0
-10
_

-20
-30

-40
-50
-60

IDS = 10mA

;-8o
-90
-100
-110

vds =5V
Ids = 10mA

= 995 MHz, \\ = 1001 MHz

VDS = 5V

;-70

1 = 495MHz, (2 = 501MHz

-20
-10
INPUT POWER PERTONE IdBml

-20
-10
INPUT POWER PERTONE IdBm)

Rgure 9:' Third Order Intermodulation Distortion

Rgure 10. Third Order Intermodulation Distortion

@ SOO MHz

@ 1 GHz

MOTOROLA RF DEVICE DATA

2-953

MRF966, MRFC966

COMMON SOURCE S-PARAMETERS

S11

S21

Sl2

S22

vds

Ids

(Volts)

ImA)

(MHz)

Pill

<-*

IS21I

t-4

IS12I

IS22I

J-*

200

0.997

-5.7

1.251

172.1

0.003

88.3

0.944

-6.4

0.931

-16

500

0.983

-14.3

1.23

161.2

0.007

1000

0.941

-28.3

1.201

142.4

0.013

78.5

0.9

-32.2

1500

0.866

-42.3

1.133

122

0.016

70.4

0.836

-49.6

2000

0.762

-55.4

1.011

101.1

0.018

56.2

0.744

-67.5

2500

0.642

-66.4

0.819

77.4

0.015

25.5

0.608

-87.5

0.995

200

-6.2

1.60

172.0

0.002

84.1

0.93

500

0.981

-15.1

1.58

161.3

0.007

82.5

0.92

-15.8

1000

0.928

-29.9

1.65

142.9

0.013

81.5

0.S0

-31.8

1500

0.838

-44.4

1.46

122.3

0.016

74.7

0.84

-49.4

2000

0.716
0.584

-57.7

1.31

101.2

0.018

60.1

0.76

-67.5

1.06

77.4

0.015

26.7

0.63

-68.4
-89.8

200

0.996

-6.3

1.83

172.0

0.002

76.4

0.93

-6.3

500

0.979

-15.7

1.80

161.2

91.5

0.92

-15.6

1000

2500
15

84.6

-6.3

0.921

-30.9

1.76

142.3

0.006
0.012

82.3

0.90

-31.6

1500

0.820

-45.9

1.66

121.7

0.016

-49.1

0.689

-58.7

1.48

0.016

0.77

-68.2

2500

0.552

-67.4

1.20

100.6
76.7

76.1
64.1

0.85

2000

0.013

28.9

0.65

-30.3

200

0.995

-6.5

1.97

171.9

0.003

85.7

0.92

-6.2

500

0.977

-16.2

1.93

160.7

0.007

89.0

0.91

-15.3

1000

0.910

-32.0

1.89

141.7

0.011

84.0

0.89

-31.0

1500

0.804

-47.1

1.79

120.9

0.016

78.3

0.85

-48.4

2000

0.669

-59.7

1.59

99.6

0.017

66.2

0.78

-67.4

2500

0.531

-67.7

1.29

75.8

0.012

32.7

0.66

-89.2

200

0.997

-5.8

1.27

172.8

0.002

102.6

0.97

500

0.983

-14.3

1.26

162.6

0.004

0.97

-9.4

1000

0.939

-28.4

1.24

146.0

0.006

82.3
93.4

0.96

-18.8

-3.8

1500

0.866

-42.6

1.21

128.4

0.008

102.6

0.95

-28.3

2000

0.765

-5.3

1.14

111.6

0.007

137.7

0.93

-37.6

2500

0.642

-68.4

1.05

93.1

0.012

-179.0

0.92

-47.0

200

0.366

-6.0

1.61

172.8

0.002

0.97

-3.8

0.004

-9.4

88.1

500

0.982

-15.1

1.59

162.8

85.8

0.97

1000

0.928

-29.9

1.57

146.1

0.006

94.6

0.841

-44.6

1.53

128.7

0.006

110.4

0.S6
0.94

-18.6

1500
2000

0.724

-58.3

1.42

111.6

152.6

0.93

-37.0

-28.0

2500

0.589

-69.4

1.30

93.3

0.008
0.014

179.1

0.92

-46.3

200

0.997

-6.2

1.82

172.6

0.001

103.2

0.97

-3.7

85.3

0.36

-9.3

500

0.979

-15.6

1.80

162.5

0.003

1000

0.920

-30.8

1.77

145.6

0.005

92.4

0.95

-18.4

1500

0.824

-45.8

1.72

127.9

0.007

116.3

0.94

-27.3

2000

0.699

-59.2

1.59

110.8

0.008

154.1

0.93

-36.3

2500

0.560

-69.6

1.44

92.6

0.017

176.2

0.92

-45.4

200

0.995

-6.5

1.96

172.4

0.002

85.9

0.97

-3.7

500

0.977

-16.1

1.93

162.1

0.004

80.9

0.96

-9.1

1000

0.913

-31.7

1.90

144.9

0.005

92.1

0.95

-17.9

1500

0.810

-47.0

1.83

126.9

0.007

121.4

0.94

-26.9

2000

0.679
0.538

-60.4

1.69

109.7

0.93

-35.6

1.53

91.4

0.009
0.017

153.4

-70.0

176.0

0.93

-44.6

2500

MOTOROLA RF DEVICE DATA

2-954

MRF966, MRFC966

vds
-VGS

SLUG TUNER

RF INPUT >BIAS

BIAS

RF OUTPUT

TEE

SLUG TUNER

TEE

Figure 11, 1 GHz Test Circuit Schematic

TYPICAL CHARACTERISTICS

Gnf

(MHz)

((IB)

(dB)

IMS NFopt

450

0.6

0.82/21"

0.80 /TV

1000

1.2

0.74 /2V

0.77 /12"

IML NFop,

Figure 12. Source and Load Impedance for Optimum

Noise Figure

MRFC966 Chip Topography

SOURCE -

Nominal Chip Size: 0.017" x 0.020" x 0.005"

Drain Source Bond Pad: 0.003" x 0.004"

Gate 1/Gate 2 Bond Pad: 0.0035" x 0.0035"

DRAIN-

GATE 2

MOTOROLA RF DEVICE DATA

2-955

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF1000MA
MRF1000MB

The RF Line
0.7 W

960-1215 MHz

CLASS A/AB
MICROWAVE POWER
TRANSISTORS

MICROWAVE PULSE POWER TRANSISTORS

. . . designed for Class A and AB common emitter amplifier

NPN SIUCON

applications in the low-power stages of IFF, DME, TACAN, radar

transmitters, and CW systems.
Guaranteed Performance @ 1090 MHz , 18 Vdc Class A
Output Power = 0.2 Watt

NOTES

i taiLDsrMruw

Minimum Gain = 10 dB

l MOTOWTOUMXIMIHMnS

! I CX0C33 ITII (fl

lEDSSUTHSrUK

100% Tested for Load Mismatch at All Phase Angles

with 10:1 VSWR

i ojuksouutustkohxis

S OMUSOMMOTOUIUIICMGietMS"
tin

Industry Standard Package

Nitride Passivated

MUMTtn
MH
HU
IM
>?
to

WH
'1
m
sn
i
'fl
io
H
ie
'fi
en
Oil
is
241
IV
-N

Gold Metallized, Emitter Ballasted for Long Life and

Resistance to Metal Migration
Compatible with Other 1O00M Types
STVU2

Internal Input Matching for Broadband Operation

m i rum*

2MSE
jExrrm
COUECTOI

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

vydc

Collector-Base Voltage

VcBO

Vdc

Emitter-Base Voltage

vebo

3.5

Vdc

Collector-Current Continuous

200

mAdc

Total Device Dissipation @ Tq = 25C (1)

7.0
40

Wans

mW/C

Tstg

-65 to +150

Derate above 25C

Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case (2)

MRF1000MB
CASE332A-01

noes
MR 1 nu

OM 1 OJB

0M9 1 OHO
OIK I OJOS
IBS 1 SOB
cs i tin

oca 1 cm
tta 1 ots
ta 1 ems l Bios
<S-N

1 H2

IU) 1 OM

in l

om i oks

NOTES

i tai[X]oMrmi

zmsjouiiaauantnitBi
IOT0OCT<g>lTl(g>l

Symbol

Max

RflJC

Unit

C/W

(1) These devices are designed for RF operation. The total device dissipation rating
applies only when the devices are operated as RF amplifiers.

(2) Thermal Resistance is determined under specified RF operating conditions by

infrared measurement techniques.

TssumcriAW
t m u t u a l fuck
i laitNsosiotwTOiEMNCMarHiwsrus.
tin

muwrais

US
IS
MS
in
IS 24

woe
MM
m

W
>J

tm
MH
1H0
0139
om
WB
OSB
171
ora
too
om
ttos
eon
4S-N0M

111

Sfl
"1
Ot|

241 1 217
IS'NOM

STYU2
m i WTTEI

ItUi
lurnu

4COUKT0H

fTJO

MOTOROLA RF DEVICE DATA

2-956

MRF1000MA, MRF1OOOMB
ELECTRICAL CHARACTERISTICS (TC= 26C unless otherwise noted)

Max

Unit

Symbol

Min

V(BR)CE0

Vdc

V(BR)CES

Vdc

VfBRlCBO

V(BR)EBO

3.5

Characteristic

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(lC = 5.0 mAdc, Ib = 0)

Collector-Emitter Breakdown Voltage

flC = 5.0 mAdc, VBe = 0)

Collector-Base Breakdown Voltage

Vdc

dC = 5.0 mAdc, Ie = 0)
Emitter-Base Breakdown Voltage

Vdc

(lE=1.0 mAdc, lc = 0
Collector Cutoff Current

'CBO

0.5

mAdc

(Vcb = 20 vdc, ie = 0)
ON CHARACTERISTICS
DC Current Gain

"FE

100

dC = 100 mAdc, Vce s 50 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

C0b

6.0

2.0

(Vcb = 28 Vdc, lE = 0, f = 1.0 MHz)

FUNCTIONAL TESTS

GpE

Common-Emitter Power Gain Class A

10.7

(VCe= 18 Vdc, lc = 100 mAdc, f = 1090 MHz, Pout = 200 mW)

Gpe

Common-Emitter Power Gain Class AB

(VCE= 18 Vdc, Icq = 10 mAdc, f = 1090 MHz, Pout = 0.7 W)

Load Mismatch Class A

No Degradation in Power Output

(VCE= 18 Vdc, lc = 100 mAdc, f = 1090 MHz, Pout = 200 mW,

VSWR = 10:1 All Phase Angles)
FIGURE 1 C1.C2. C3. C7, C8. CIO- 220 pF ATC 100 mil
C4. C9 - 4.7 pf 50 V Tantalum
C5, C6 - 0.8-8 pF Johanson #7290
Z1-Z10 Distributed Microstrip Elements
See Figure 8

Board Material 0.031" Thick Teflon-Fiberglass

1090 MHz TEST CIRCUIT

-O Colloctor Bias Input

Base
to Bias Input 'O

CE c^L c{l

111

C2[ cq cf

t , - 2.56

Input

^?S

:io^

' Output

5% c

1
Class AB Bias Control Circuit

Class-A Constant Current Bias Control Circuit

18 V Output Icq 10 mA Nominal

l_=100mA,V-,.-18V.
O +28 V Input

T7<

r CI
X 1QuF

-O +18 V Input

10uF

_T_50V

50 V

+ 18 V Collector Bias

18 V Collector Biss

Output to Point C
330

1 0 . 1 uF

5nv

1/2 W

50 V

0.1 uF
50 V

1/2 W

to Point B

0.1 uF

C2 Output to Point C

1 k

_-. Base Bias Output

i
i~

18k
1/2 W

1 C3

uF
R4l 0.1
50 V

2.2 k 1/2 W

MOTOROLA RF DEVICE DATA

2-957

Base Bias Output

to Point B

MRF1000MA, MRF1000MB
FIGURE 2 - OUTPUT POWER versus INPUT POWER

FIGURE 3 - OUTPUT POWER versus FREQUENCY

g 0.8
CUaAB

5
s

Icq- 10
Vet"

0.6

OtssAB

'Pj60mW'
.lCQ" 10 mA.
vCe =i8v

CtiaA

lC-100 mA.vce-lav OtssA

P;n20mW"
.lC 100mA.
vCe-i8v

i- IOS0 MHt

1090

P,n.INPUT POWER ImW)

FIGURE 4 -

I. FREQUENCY (MHi)

FIGURE S -

DC SAFE OPERATING AREA

POWER GAIN versus FREQUENCY

.OtssA

Poul' 200m\H
-IC-100 mA
vCe* i8v
-r InlA liti Pain

0.05

Clin AB

-poul
'CO" 10 mA
-vce 18V
2.0

5.0

1090

I. FREQUENCY (MHr)

Vce. COLLECTOR EMITTER VOLTAGE (VOLTSI

FIGURE 6 - COMMON-EMITTER S-PARAMETERS AND SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES

SERIES EQUIVALENT IMPEDANCES

Poa,0.5W.VCE'18Vdc.
lCQ- 10mAdc,Cits AB
f

zol*
Ohms

Ohms

S60

3.0 + 19.0

I6-J40

1090

3.2 + jlO

8.5-131

1215

2.8 +112

7.0 -j26

MHt

Zqi Conjugttt of th< optimum lotdimptdtnet

into which thi derict output optcttts tt t
ghrtnoutput powtr, votttgt, tnd frequency.

S-PARAMETERS - Vce * '8 Vdc.lc - 100mAdc. Clm A

-J50
Coordinttts in Ohms

MHt

Sill

2-958

22l

0X116

0.48

-87

0.016

0.50
0.51

-90
-94

2.42
2.36
2.31

950

0.77

16S

0.78
0.77
0.77

165
163
162

1150
1200

0.7S
0.7S

161
159

1250

0.78

158

MOTOROLA RF DEVICE DATA

rsi2i

2|l

1000
1050
1100

231

2.20
2.20
2.12

S22

Sl2

S21
i#

28
23

0.016
0X116

46
46

0.015

19
12

0.016
0.016

46
47
42

0.54

-97

0.57

-100

0.59
0.61

-103
-106

MRF1000MA, MRF1000MB
FIGURE 7 -

1090 MHz TEST AMPLIFIER

FIGURE 8 - PRINTED CIRCUIT BOARD

LAYOUT - 1090 MHz TEST CIRCUIT

CLASS A BIAS NETWORK

AMPLIFIER

NOTE: The Printed Circuit Board shown is 75% of the original

MOTOROLA RF DEVICE DATA

2-959

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

MRF1002MA
MRF1002MB

The RF Line
2.0 W PEAK

960-1215 MHz

MICROWAVE POWER

MICROWAVE PULSE POWER TRANSISTORS

TRANSISTORS
NPN SIUCON

. .. designed for Class B and C common base amplifier applications

in short and long pulse TACAN, IFF, DME, and radar transmitters.
Guaranteed Performance @ 1090 MHz, 35 Vdc
wis

Output Power = 2.0 Watts Peak

IWSnBrailQUMWtKltliAOS

Minimum Gain = 10 dB

i l l timta (Situ i

irrjusumgnAic

100% Tested for Load Mismatch at All Phase Angles

ncxsoiitJimfSTWoiucK
i oacxsKNGuerouiiMcmwiAttsivtu

with 10:1 VSWR

Industry Standard Package

m
IN
tn
1UI

Compatible with Other 1002M Types

IIUTTEt

IMS
icoufcra

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

Vceo

Vdc

Collector-Base Voltage

VCBO

Vdc

Emitter-Base Voltage

Vebo

3.5

Vdc

Collector-Current Continuous

250

mAdc

Total Device Dissipation@ Tc =2BC (1)

7.0
40

mW/C

Tstg

-65 to +150

Symbol

Max

UnH

RfljC

C/W

Derate above 25C

Storage Temperature Range

Thermal Resistance, Junction to Case (2)

0*0

KM
0X0

IU)
cm
IBS
tm

tH)
tm
tea
ow

tin

tm
tm
in
01
om
<PIB

tin 1 om
tin l ows

Watts

THERMAL CHARACTERISTICS
Characteristic

KW
>

n
OS
tV
It
'0
w
*n
1
"?
in
git
im
m
w
tm
4SJ
*n

smii
miwt

Internal Input Matching for Broadband. Operation

Rating

too

M4JKTSB

Nitride Passivated

Gold Metallized, Emitter Ballasted for Long Life and

Resistance to Metal Migration

MRF1002MB
CASE332A-01

Noris

i myDsunM
i rosrroiiAinxiiwiCtroiKcs

Ult)icm(>TfTIw1

(1) These devices are designed for RF operation. The total device dissipation rating
applies only when the devices are operated as RF amplifiers.

(2) Thermal Resistance is determined under specified RF operating conditions by

l GQ issuing fum.
tool I VMS I IKES
s. owcocw wtrjuMJOGWiursras.

infrared measurement techniques.

MiKrSB
m
w
IIS
'
in
111
us
W
ID
in
Id
on
IS*
!
w
FWM

J9L

0M0
tn
0
OID
om
tm
int
tm
tm
ini
i
OHS
tm
<rH

snui
mtus
jurnw
lust
tcouicna

-pa

MOTOROLA RF DEVICE DATA

2-960

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