Sunday 21 July 2002

16:30.17.30
18.00-19.30

Registration at St Marys College

Welcome Reception at the Ian Potter Museum of Art

Monday 22 July 2002

07.45

Registration in the Foyer of the Architecture Building

08.45

Welcome and Introduction Prince Phillip Theatre, Architecture

Building

Opening Session
Chair:
R. Kalish (Technion, Israel)
9:00

1.1

Invited Presentation: Diamond Growth from Gases: Where are we

going? And How did we get here?
J.E.Butler
(Naval Research Laboratory,USA)

9:30

1.2

Invited Presentation: Small is beautiful: Ultrananocrystalline

Diamond Films
D.M.Gruen
(Argonne National Laboratory, USA)

10:00

1.3

Invited Presentation: Nanoelectronics based on diamond surfaces

H. Kawarada1, 2, M. Tachiki1, 2, H.Umezawa1, 2
(1Waseda University, Japan)
(2CREST JST, Japan)

10:30-11.00

COFFEE BREAK & POSTER VIEWING

Session 2: Growth and Doping

Chair:
J.E.Butler (Naval Research Laboratory,USA)
11:00

2.1

Invited Presentation: Synthesis and characterization of diamond

films and carbon nanomaterials by laser ablation of graphite in O2
atmospheres
M. Yoshimoto, K. Makajima, A.Sasaki, T. Yamamoto
(Tokyo Institute of Technology, Japan)

11:30

2.2

Co-doping of diamond with sulfur and boron

S.C.Eaton1, A.B.Anderson2, J.C.Angus1, Y.E.Evstefeeva3, and Yuri
V. Pleskov3
(1Chemical Engineering Department, Case Western Reserve
University, USA)
(2Chemistry Department, Case Western Reserve University, USA)
3
( Frumkin Institute of Electrochemistry, Russia)

11:50

2.3

New theory of CVD Diamond Growth by Charged clusters

N.M Hwang1, 2, and D.Y.Kim1
1
( Center for Microstructure Science of Materials, Seoul National
University, Korea)
(2Korea Research Institute of Standards and Science, Korea)

12:10

2.4

Characterization of 5-inch free-standing diamond wafers deposited

by single-cathode DC PACVD
W.S.Lee1, Y.J.Baik1 and K-W,Chae2
(1Thin Film Technology Research Center, Korea Institute of Science
and Technology)
(2Precision Diamond Company)

12:30

2.5

Optical Raman Dark Resonances for Quantum Computing in N-V

Diamond
P.R. Hemmer1 and M.S. Shahriar2
(1 Department of Electrical Engineering, Texas A&M University,
Texas, USA)
(2 Department of Electrical and Computer Engineering, Northwestern
University, Evanston, IL, USA)

12:50-14:15

LUNCH & POSTER VIEWING

ii

Session 3: Field and Electron Emission

Chair:
W.I.Milne (Cambridge University, UK)
14:15

3.5

Electron emission from Boron doped diamond induced by molecular

ions
R. Kalish V. Richter, N. Koenigsfeld Y. Avigal and E. Cheifetz

14:45

3.2

Spiky diamond field emitter

Y.Ando1, Y. Nishibayashi1, H.Furuta2, K.Kobashi1, T.Hiraov3, and
K.Oura3
1
( Center for Advanced Research Projects)
(2New Energy and Industrial Technology Development Organization
NEDO)
(3Faculty of Engineering, Osaka University)

15:05

3.3

Field emission from SiC Nanotip Arrays

K-H. Chen1, J.S. Hwang1, H.C.Lo1, D.Das1, and L-C. Chen2
(1Institute of Atomic and Molecular Sciences, Academia Sinica,
Taiwan)
(2Center for Condensed Matter Sciences, National Taiwan
University, Taiwan)

15.25

3.6

Field emission properties of diamond particles with thin diamond

overcoat grown by chemical vapor deposition
A.Watanabe, and M.Kitabatake

15:45

COFFEE BREAK & POSTER VIEWING

17:15-18:45 POSTER PREVIEW SESSION 1

Authors who have agreed to participate will make a short, maximum 3 minute, one
overhead transparency, oral presentation that serves to 'advertise' the main point of the
poster.
P1.01.1

J E Butler

Analysis of Large Single Crystal CVD Diamond

J.E.Butler, T.A.Kennedy, J.Colton,S.Qadri,
R.Linares and P.Doering

P1.01.2

H.W.Chen

The 3-D structure of polycrystalline diamond films

by electron backscattering diffraction (EBSD)

iii

P1.01.5

N.M Hwang

Which does stabilize diamond over graphite in the

diamond CVD process, atomic hydrogen or electric
charge?

P1.01.13

D.S.Misra

Microporous diamond films on zeolites by CVD

method

P1.01.14

Miguel E.MoraRamos

Hole states in boron-delta-doped diamond

P1.01.15

T.Oku

Formation, atomic structures and structural

optimization of tetrahedral carbon onion

P1.01.17

J.R.Petherbridge

Sulfur addition to CH4/CO2 diamond CVD gas

mixtures: growth studies and gas phase
investigations

P1.01.18

J.R.Petherbridge

Simulation of H-C-S containing diamond CVD gas

mixtures

P1.01.23

B.V.Spitsyn

Nucleation by activated diamond CVD

P1.01.25

H. Yoshikawa

Characteristics of an abnormal DC glow discharge

for diamond synthesis

P1.01.26

Tai-Fa Young

Characterization of Boron doped Diamond Thin

Film Grown on Porous Silicon

P1.02.3

A.V.Karabutov

BN and SiO2 can replace diamond in nanostructured

carbon low-field emitters

P1.02.4

A.V.Karabutov

Low-field electron emission of self organized

micro-tip arrays with incorporated nanotubes
produced by laser beam evaporation

P1.02.5

A.V.Karabutov

Can oxidation improve field electron emission of

diamond nanomaterials

P1.02.6

Bean-Jon Li

Emission Properties of Carbon Nanotubes field

Emitter

P1.02.11

Akira Yamamoto

Field emission from Carbon Films Deposited on

Steel Substrate

P1.02.13

Zhou Ji-cheng

Simulation on I-V characteristics of carbon

nanotube's self-assembly system

iv

P1.03.1

M.Belmonte

Acoustic emission detection of macro-indentation

cracking mechanisms of diamond coating on silicon

P1.03.4

K.Iakoubovskii

ESR and optical defects in as-grown and irradiated

CVD diamond

P1.03.8

P.W.May

Stiffness Measurements of Diamond Fibre

Reinforced Plastic Composites

P1.03.9

N.N.Melnik

Surface and bulk states of disordered carbon and

their optical properties

P1.03.12

D.S.Misra

Effect of Heavy Ion irradiation on self supported

diamond sheets

P1.03.17

I.Sh.
Trakhtenberg

The application of microhardness method for

measurement and attestation of hard coatings

P1.03.18

E.Trajkov

Thermally stimulated current analysis of Ion

Implanted Synthetic Diamond

P1.04.1

M.-C.Castex

Bulk Photoconductivity of CVD diamond films for

UV and XUV detection

P1.04.2

K.K.Hirakuri

Deposition of DLC Films on polymeric materials

for biomedical applications

P1.04.5

H.Matsudaira

Deep sub-micron gate diamond MISFETs

P1.04.6

E.Pace

2-D imaging arrays on CVD diamond

P1.04.7

E.Pace

Spectral response of large area CVD diamond

photoconductors for space applications in the deep
UV

P1.05.9

A.Madronero

Possibilities of improving mechanical and electrical

properties of Portland cement by addition of carbon
nanotubes

P1.05.10

P.W.May

Observations of nanotube and 'celery' structures

following diamond CVD on single crystal diamond
substrates

18:45-21:00

BBQ & POSTER SESSION 1

POSTER SESSION 1

Session P1.01: Growth and Doping

P1.01.1

Analysis of Large Single Crystal CVD Diamond

J.E.Butler1, T.A.Kennedy1, J.Colton1,S.Qadri1, R.Linares2 and
P.Doering2
1
( Naval Research Laboratory, USA)
(2Apollo Diamond Inc., USA)

P1.01.2

The 3-D structure of polycrystalline diamond films by electron

backscattering diffraction (EBSD)
H.W.Chen, V.Rudolph
(Department of Chemical Engineering, Queensland University,
Australia)

P1.01.3

The effect of ionic hydrogen on the growth of micro-crystal diamond

via solid carbon source in the atmosphere of microwave hydrogen
plasma
Xiaohu Chen
(Department of Materials Science and Engineering, Hua Qiao
University, P.R.China)

P1.01.4

A Molecular Dynamics Simulation of Boron in Diamond

X.J.Hu, Y.B.Dai, R.B.Li, H.S.Shen, X.C.He
(State Key Lab of MMCMs, Shanghai Jiaotong University
P.R.China)

P1.01.5

Which does stabilize diamond over graphite in the diamond CVD

process, atomic hydrogen or electric charge?
N.M Hwang1, D.Y.Kim2
(1Center for Microstructure Science of Materials, Seoul National
University, Korea)
(2Korea Research Institute of Standards and Science, Korea)

P1.01.6

Mechanism of heteroepitaxial growth of diamond films

H.Ishigaki, T.Kimura and S.Yugo
(University of Electro-Communications, Japan)

P1.01.7

Optical emission spectroscopic studies on the positive bias effects in

plasma-assisted chemical vapor deposition of diamond
H.Isshiki, M.Nojiri, N.Ishigaki, T.Kimura and S.Yugo
(University of Electro-Communications, Japan)

vi

P1.01.8

Large Area Deposition of Diamond Powders by Direct Current

Plasma Assisted Chemical Vapor Deposition (DC PACVD) Method
Jae-Kap Lee1, Seung-Hyeob Lee1, Young-Joon Baik1, Kwang Yong
Eun1, Jin-yul Lee2 and Jon-Wan Park2
1
( Thin Film Technology Research Center, Korea Institute of Science
and Technology, Korea)
(2Department of Metallurgical Engineering, Hanyang University,
Korea)

P1.01.9

Single-cathode DC PACVD process for large-area diamond wafer

fabrication
W.-S. Lee1, Y.-J.Baik1, and K.-W.Chae2
1
( Thin Film Technology Research Center, Korea Insitute of Science
and Technology, Korea)
(2Precision Diamond Company, South Korea)

P1.01.10

Analysis of the interface between Unpolished Mo and Polycrystalline

Diamond Films
Jingqi Li, Qing Zhang, S.F.Yoon, .Ahn, Qiang, Zhou, Sigen Wang,
Dajiang Yang and Qiang Wang
(Microelectronic division, NanYang Technological University,
Singapore)

P1.01.11

Manipulation of the equilibrium between diamond growth and

renucleation to form a novel nanodiamond/amorphous carbon
composite
X.T.Zhou1, Wuan Li1, F.Y.Meng1, I.Bello1, C.S.Lee1, S.T.Lee1 and
Y.Lifshitz1, 2
1
( Center of Super-Diamond and Advanced Films: COSDAF & Dept
of Physics and Materials Science, City University of Hong Kong,
P.R.China)
(2On leave from Soreq NRC)

P1.01.12

High IR Transmittance diamond films synthesized using CH3 OH-H2

gas mixtures
Man Wei-dong, Wang Jian-hua, Ma Zhi-bin, Wang Chuan-xin
(Wuhan Institute of Chemical Technology, P.R.China)

P1.01.13

Microporous diamond films on zeolites by CVD method

E.Titus, M.K.Singh, K.N.N.Unni, P.K.Tyagi and D.S.Misra
(Department of Physics, Indian Institute of Technology, India)

P1.01.14

Hole states in boron-delta-doped diamond

Miguel E.Mora-Ramos
(Universidad Autonoma del Estado de Morelos, Mexico)

vii

P1.01.15

Formation, atomic structures and structural optimization of

tetrahedral carbon onion
T.Oku and I.Narita
(Institute of Scientific and Industrial Research, Osaka University,
Japan)

P1.01.16

Microstructure control of diamond film using pulsed direct current

biasing
Jong-Kuek Park, Wook-Seong Lee and Young-Joon Baik
(Thin Film Technology Research Center, Korea Institute of Science
and Technology)

P1.01.17

Sulfur addition to CH4/CO2 diamond CVD gas mixtures: growth

studies and gas phase investigations
J.R.Petherbridge, P.W.May, E.Crichton, K.N Rosser and M.N.R.
Ashfold
(School of Chemistry, University of Bristol)

P1.01.18

Simulation of H-C-S containing diamond CVD gas mixtures

J.R.Petherbridge, P.W.May, D.E.Schallcross, G.M.Fuge, K.N Rosser
and M.N.R. Ashfold
(School of Chemistry, University of Bristol)

P1.01.19

Characterization of impurities doped diamond films by new bias

method
D.Saito, T.Kimura and S.Yugo
(University of Electro-Communications, Japan)

P1.01.20

Highly effective carbon fibered adsorbents

N.Savchenko, M.Guseva, V.Babaev, V.Khvostov, N.Novikov,
A.Manakov
(Department of Physics, Moscow State University, Russia)

P1.01.21

Growth of diamond on -(0001) sapphire substrates

K.G. Saw1, I. Andrienko1, A. Cimmino1, P. Spizzirri1, S. Prawer1 and
J. du Plessis2
(1 School of Physics, University of Melbourne, Australia)
(2 Department of Applied Physics, RMIT, Australia)

P1.01.22

Roughness control of polycrystalline diamond films grown by biasenhanced microwave plasma-assisted CVD
Soo-Hyung Seo1, Tae-Hoon Lee2,and Jin-Seok Park2
(1 Center for Electronic Materials and Components (EM&C),
Hanyang University, Korea)
(2 Department of Electrical Engineering, Hanyang University, Korea)

P1.01.23

Nucleation by activated diamond CVD

B.V.Spitsyn
(Institute of Physical Chemistry, RAS, Russia)

viii

P1.01.24

Diamond film deposition on synthetic diamond crystals using the

glow discharge
V.K. Pashnev1, V.E. Strelnitskij1, O.A.Opalev1, V.I.Gritsina1, I.I.
Vyrovets1, Y.A. Bizjukov1, A.I.Lolupaeva2, T.A. Nachalnaya3,
G.G.Podzyarev3 and S.A.Ivahknenko3
(1 NSC Kharkov Institute of Physics and Technology, Ukraine)
(2 Kharkov State Polytechnical University, Ukraine)
(3 Institute for Superhard Materials, Ukraine)

P1.01.25

Characteristics of an abnormal DC glow discharge for diamond

synthesis
H. Yoshikawa1, Sung-Pill Hong1, Y.Koga2, and A.Nishiyama3
(1 Japan Fine Ceramics Center: JFCC, Japan)
(2 National Institute of Advanced Industrial Science and Technology:
AIST, Japan)
(3 Mistubishi Materials Corporation, Japan)

P1.01.26

Characterization of Boron doped Diamond Thin Film Grown on

Porous Silicon
Tai-Fa Young1, Chuan-Leung Hwang2, and Poh-Chan Su1
(1 Department of Physics, National Sun Yat-sen University, Taiwan)
(2 Department of Chemistry, National Sun Yat-sen University,
Taiwan)

P1.01.27

Diamond growth on Ir/CaF2/Si substrates

Jun Qi1, C.H.Lee1, L.S.Hung1. W.J.Zhang1, Y.Lifshitz1, 2, and
1
S.T.Lee
(1Center of Super-Diamond and Advanced Films: COSDAF & Dept
of Physics and Materials Science, City University of Hong Kong,
P.R.China)
(2On leave from Soreq NRC)

P1.01.28

Development of machining techniques of diamond coated bearings

Y.Seki, K.Meguro, A.Namba, K.Ishibashi and T.Imai
(FCT Project/JFCC, c/o Sumitomo Electric Industries, LTD., 1-1-1
Koya-kita, Itami, Hyogo, 664-0016 Japan)

Session P1.02: Field and Electron Emission

P1.02.1

Thermally agitated Field emission by Amorphous Diamond

Ming-Chi Kan1, Jow-Lay Huang1, and James C.Sung2
1
( National Cheng Kung University, Taiwan, ROC)
(2Kinik Company and National Taipei University of Technology,
ROC)

ix

P1.02.2

Nano-tip emission of amorphous diamond

Ming-Chi Kan1, Jow-Lay Huang1, James C.Sung2, Ding-Fwu Lii3 and
Kue-Hsien Chen4.
1
( National Cheng Kung University, Taiwan, ROC)
(2Kinik Company and National Taipei University of Technology,
ROC)
(3Department of Electrical Engineering, Chinese Naval Academy,
Taiwan)
(4Institute of Atomic and Molecular Sciences, Academia Sinica,
Taiwan)

P1.02.3

BN and SiO2 can replace diamond in nanostructured carbon low-field

emitters
A.V.Karabutov1, V.G.Ralchenko1, I.I.Vlasov1, S.B.Korchagina2 and
S.K. Gordeev2
(1General Physics Institute, Russia)
(2Central Research Institute of Materials, Russia)

P1.02.4

Low-field electron emission of self organized micro-tip arrays with

incorporated nanotubes produced by laser beam evaporation
A.V.Karabutov, A.V.Simakin and G.A. Shafeev
(General Physics Institute of RAS, Russia)

P1.02.5

Can oxidation improve field electron emission of diamond

nanomaterials
A.V.Karabutov1, S.K. Gordeev2, V.G.Ralchenko1, and
S.B.Korchagina2
(1General Physics Institute, Russia)
2
( Central Research Institute of Materials, Russia)

P1.02.6

Emission Properties of Carbon Nanotubes field Emitter

Bean-Jon Li, Hsing Chen, Teng-Fang Kuo, Hong-Jen Lai
(Materials Research Laboratories, Industrial Technology Research
Institute, Taiwan, ROC)

P1.02.7

The vertical growth of multi-walled carbon nanotubes by biasassisted ICPHFCVD and their field emission properties
H.J.Ryu1, K.S.Kim1 and G.E.Jang2
(1Advanced Materials Division, Korea Research Institute of Chemical
Technology, Korea)
(2Department of Materials Science and Engineering, Chungbuk
National University, Korea)

P1.02.8

Microwave Plasma CVD of diamond and nanodiamond coatings in

vapor mixtures of methanol and ethanol and applications to cold
cathodes
Y.Tzeng, C.Liu and Y.Chen
(Department of Electrical and Computer Engineering, Auburn
University, USA)

P1.02.9

High current-density carbon-nanotube cold cathodes and applications

to non-contact electrical couplers and switches
Y.Tzeng, C.Liu and Y.Chen
(Department of Electrical and Computer Engineering, Auburn
University, USA)

P1.02.10

Comparison of electron field emission characteristics of carbon

nanotubes and nano-diamond films
S.G.Wang1, Q.Zhang1, S.F.Yoon1, J.Ahn1, F.X.Lu2, D.J.Yang1,
1
1
1
Q.Wang , Q.Zhou and J.Q.Li
(1Microelectronics Centre, Nanyang Technological University,
Singapore)
(2School of Materials Science and Engineering, University of Science
and Technology, Beijing, PR China)

P1.02.11

Field emission from Carbon Films Deposited on Steel Substrate

Akira Yamamoto, Takahiro Tsutsumoto
(Western Industrial Research Institute of Hiroshima Prefecture,
Japan)

P1.02.12

The Electron field emission of CNx films grown by rf magnetron

sputtering
J.J.Li, W.T.Zheng, H.T.Bian, and Z.S.Jin
(Department of Materials Science and National Laboratory of
Superhard Materials, Jilin University, PR China)

P1.02.13

Simulation on I-V characteristics of carbon nanotube's self-assembly

system
Zhou Ji-cheng, He Hong-bo, Li Yi-bing and Huang Bai-yun
(State Key Laboratory for Powder Metallurgy, Central South
University, PR China)

xi

Session P1.03: Characterization

P1.03.1

Acoustic emission detection of macro-indentation cracking

mechanisms of diamond coating on silicon
M.Belmonte1, A.J.S.Fernandes2, F.M.Costa2, F.J. Oliveira1 and
R.F.Silva1
1
( Department of Ceramics and Glass Engineering, CICECO,
University of Aveiro, Portugal)
(2Department of Physics, Univ. of Aveiro, Portugal)

P1.03.2

TL characterization of a CVD diamond wafer for ionising radiation

dosimetry
M.Benabdesselam1, P.Iacconi1, J.E.Butler2 and C.Nigoul1
(1Laboratoire de Physique Electronique des Solides, Universite de
Nice-Sophia Antipolis, France)
2
( Naval Research Laboratory, Chemistry Division, USA)

P1.03.3

Nature of millimeter wave losses in low loss CVD diamonds

B.M.Garin1, V.V.Parshin2, S.E.Myasnikova2, and V.G.Ralchenko3
(1Institute of Radio Engineering and Electronics of Russian Academy
of Sciences)
(2Institute of Applied Physics of Russian Academy of Sciences)
(3Natural Science Center of General Physics Institute of Russian
Academy of Sciences)

P1.03.4

ESR and optical defects in as-grown and irradiated CVD diamond

K.Iakoubovskii and A.Stesmans
(Physics Department, K.U.Leuven, Belgium)

P1.03.5

Topographical study of split and shift of cathodoluminescence peaks

of diamonds
H.Kanda1, K.Watanabe1, Y.Y Eun2, and B.J.K.Lee2
1
( National Institute for Materials Science, Japan)
(2Korea Institute of Science and Technology, Korea)

P1.03.7

Oxidation Behaviour of High Quality Freestanding Diamond Films

F.X.Lu, J.M.Liu, W.Z.Tang, C.M.Li, J.H.Song, andY.M.Tong
(School of Materials Science and Technology, University of Science
and Technology Beijing, PR China)

P1.03.8

Stiffness Measurements of Diamond Fibre Reinforced Plastic

Composites
P.W.May1, P.J.C.Wigg and D.Smith2
(1School of Chemistry, University of Bristol, UK)
2
( Department of Mechanical Engineering, University of Bristol, UK)

xii

P1.03.9

Surface and bulk states of disordered carbon and their optical

properties
N.N.Melnik1, T.N.Zavaritskaya1, V.A.Karavanski2
(1Lebedev Physical Institute, RAS, Russia)
2
( Center of Natural-Science Research, Institute of General Physics,
RAS, Russia)

P1.03.10

Influence of the growth conditions on the detection properties of

CVD diamond films
M.G.Donato, G.Faggio, M.Marinelli, G.Messina, E.Milani,
A.Paoletti, S.Santangelo, A.Tucciarone and G.Verona Rinati
(1INFM Dipartimento di Meccanica e Materiali, Universita di
Reggio Calabria, Italy)
(2INFM Dipartimento di Scienze e Tecnologie Fisiche ed
Energetiche, Universita di Roma, Italy)

P1.03.11

Rectifying Behaviour of Heterostructures formed on PhosphorousDoped Polycrystalline Diamond Thin Films

Sattar Mirzakuchaki
(Iran University of Science and Technology, Iran)

P1.03.12

Effect of Heavy Ion irradiation on self supported diamond sheets

Umesh Palnitkar1, V.S.Shirodkar1, M.K.Singh2, Elby Titus2,
D.S.Misra2, P.Ayyub3 and D.K. Avasthi4
(1Department of Physics, Institute of Science, India)
(2Department of Physics, Indian Institute of Technology, India)
3
( Department of Condensed Matter Physics and Material Science,
Tata Institute of Fundamental Research, India)
(4Nuclear Science Centre, India)

P1.03.13

The Optical properties of the neutral [001]-split interstitial (I001) in

diamond
H.Smith1, M.E.Newton1, A.Mainwood1, G.Davies1 and T.R.Anthony2
(1Department of Physics, Kings College London, UK)
2
( General Electric Company, USA)

P1.03.14

Charge -based deep level transient spectroscopy of undoped and

nitrogen-doped ultrananocrystalline diamond films
V.I.Polyakov1, N.M.Rosssukanyi1, A.I.Rukovishnikov1,
V.G.Pereverzev2, S.M Pimenov2, J.A.Carlisle3, and D.M.Gruen3
1
( Institute of Radio Eng. & Electronics, Russia)
(2General Physics Institute, Russia)
(3Material Science Division, Argonne National University, USA)

xiii

P1.03.15

Charge sensitive deep level transient spectroscopy of boron-doped

and gamma irradiated mono- and polycrystalline diamond
V.I.Polyakov1, N.M.Rosssukanyi1, A.I.Rukovishnikov1,
V.G.Pereverzev2, S.M Pimenov2, J.A.Carlisle3, and D.M.Gruen3
(1Institute of Radio Eng. & Electronics, Russia)
(2General Physics Institute, Russia)
(3Material Science Division, Argonne National University, USA)

P1.03.16

Polarisation dependence of raman scattering in nanostructured carbon

films
M.C.Rossi
(Electronic Engineering Dept, and INFM, University of Roma Tre,
Italy)

P1.03.17

The application of microhardness method for measurement and

attestation of hard coatings
I.Sh. Trakhtenberg1, A.B.Vladimirov1, A.P.Rubstein1, E.V.Kusmina1
2
and K.Uemura
(1Metal Physics Institute, RAS, Russia)
(2ITAC Ltd, Japan)

P1.03.18

Thermally stimulated current analysis of Ion Implanted Synthetic

Diamond
E.Trajkov and S.Prawer
(Centre for Quantum Computing Technology, School of Physics, The
University of Melbourne, Australia)

P1.03.19

Investigation on the mangnetoresistive effect of p-type

semiconducting diamond films
W.L.Wang, C.Z.Cai, K.J.Liao, C.Y.Kong, Y.Ma, and L.Fang
(Department of Applied Physics, Chongqing University, PR China)

xiv

Session P1.04: Devices

P1.04.1

Bulk Photoconductivity of CVD diamond films for UV and XUV

detection
M.-C.Castex1, E.Lefeuvre1, J.Achard2, C.Beuille and H.
Schneider4
1
( Laboratoire de Physique des Lasters, CNRS, Universite ParidNord, France)
(2Laboratoire dIngenierie des Materiaux et des Hautes Pressions,
CNDR, Universite Parid-Nord, France)
(3ALSTOM Transport SA, France)
(4Laboratoire dElectrotechnique et dElectronique Industrielle,
France)

P1.04.2

Deposition of DLC Films on polymeric materials for biomedical

applications
Y. Ohgoe1, K.K.Hirakuri1, K. Tsuchimoto2, A.Honma3, G.
4
3
3
1
Griedbacher , E.Tatsumi , Y.Taenaka and Y.Fukui
(1Department of Electronic & Computer Engineering, Tokyo
Denki University, Japan)
(2Aisin Cosmos R&D, Japan)
(3Department of Artificial Organs, National Cardiovascular
Center Research Institute, Japan)
(4Institute of Analytical Chemistry, Vienna University of
Technology, Vienna)

P1.04.3

Characteristics of GaN Metal-Oxide-Semiconductor Capacitor

Using SiO2 Films Grown by photo Chemical Vapour Deposition
Bohr-Ran Huang1, Yu-Zung Chiou2, Jung-Ran Chiou1, Shoou2
2
2
Jinn Chang , Yan-Kuin Su , Chia-Sheng Chang , and Yi-Chao
Lin2
(1Institute of Electronics and Information Engineering, National
Yunlin University of Science and Technology, Taiwan, R.O.C.)
(2Institute of Microelectronics and Department of Electrical
Engineering, National Cheng Kung University, Taiwan, R.O.C.)

P1.04.4

Preparation of lithium niobate thin films on diamond-coated

silicon substrate for surface acoustic wave devices
M.Ishihara1, T.Nakamura1, F.Kokai2 and Y.Koga1, 2
(1Research Center for Advanced Carbon Materials, National
Institute of Advance Industrial Science and Technology, Japan)
(2Joint Research Consortium of Frontier Carbon Technology,
JFCC, Japan)

xv

P1.04.5

Deep sub-micron gate diamond MISFETs

H.Matsudaira1,2, T.Arima1,2, H.Ishizaka1,2, H.Umezawa1,2,
M.Tachiki1,2, S.Miyamoto1,2 and H.Kawarada1,2
1
( School of Science and Engineering, Waseda University, Japan)
(2CREST, JST, Japan)

P1.04.6

2-D imaging arrays on CVD diamond

A.De Sio1, M.G.Donato2, G.Faggio2, M.Marinelli3, G.Messina2,
E.Milani3, E.Pace1, A.Paoletti3, S.Santangelo2, S Scuderi4,
3
3
A.Tucciarone , and G.Verona-Rinati
(1Dip. Astronomia e Scienze dello Spazio, Universita di Firenze,
Italy)
(2Dip. Meccanica e Materiali, Universita di Reggio Calabria,
Italy)
(3INFM, Dip. Scienze e Tecnologie Fisiche ed Energetiche, Italy)
4
( Osservatorio Astrofisico di Catania, Italy)

P1.04.7

Spectral response of large area CVD diamond photoconductors

for space applications in the deep UV
A.De Sio1, M.G.Donato2, G.Faggio2, M.Marinelli3, G.Messina2,
E.Milani3, E.Pace1, A.Paoletti3, S.Santangelo2, S Scuderi4,
3
3
A.Tucciarone , and G.Verona-Rinati
(1Dip. Astronomia e Scienza dello Spazio, Universita di Firenze,
Italy)
(2Dip. Meccanica e Materiali, Universita di Reggio Calabria,
Italy)
(3INFM, Dip. Scienze e Tecnologie Fisiche ed Energetiche, Italy)
4
( Osservatorio Astrofisico di Catania, Italy)

P1.04.8

Study on ultraviolet emission from pn junction of hexeroepitaxial

diamond films
W.L.Wang, K.J.Liao, C.Z.Cai, C.G.Hu, Y.Ma, L.Fang
(Department of Applied Physics, Chongqing University, PR
China)

P1.04.9

Effects of CVD Diamond Coatings on the Performance of

Cemented Carbide Cutting Tools
Qiang Wang1, Qing Zhang1, F.X.Lu2, W.Z.Tang2, Sigen Wang1,
S.F.Yoon1, J.Ahn1, Qiang Zhou1, Dajiang Yang1, and Jingqi Li1
1
( Microelectronics Center, Nanyang Technological University,
Singapore)
(2School of Materials Science and Engineering, University of
Science and Technology Beijing, PR China)

xvi

Session P05: Nanotubes: synthesis and characterization

P1.05.1

Catalyzed Growth Model of Carbon Nanotubes by Microwave

Plasma Chemical Vapor Deposition Using CH4 and CO2 mixtures
Mi Chen, Ching-Ming Chen and Chia-Fu Chen
(Department of Materials Science and Engineering, National
Chiao-Tung University, Taiwan, ROC)

P1.05.2

Vapour phase growth mechanism of carbon microcoils / nanocoils

X.Chen1, S.Yang2, Ktakeuchi2, S.Motojiima2 and H.Iwanaga3
(1Faculty of Material Science and Engineering, Huauiao
University, China)
(2Department of Applied Chemistry, Gifu University, Japan)
(3Department of Material Science, Nagasaki University, Japan)

P1.05.3

Studies of ion implantation method used for catalyst applications

to synthesize carbon nanotubes by ECR-CVD
Po Yuan Lo, Chao Hsun Lin, Jin Yu Wu and Cheng Tzu Kuo
(Institute of Materials Science and Engineering, National Chiao
Tung University, Taiwan)

P1.05.4

Growth of single crystal ZnO rods and wires using sputter

deposition
W.T.Chiou, W.Y.Wu, and J.M.Ting
(National Cheng Kung University, Taiwan, ROC)

P1.05.5

Novel catalysts used for the synthesis of carbon nanotubes

Zishan Husain Khan, Huen-Hou Liao, Ruo-Mei Liu and Jyh-Ming
Ting
(Department of Materials Science and Engineering, National
Cheng Kung University, Taiwan)

P1.05.7

Carbon Nanotubes from Camphor - a Botanical Hydrocarbon

Mukul Kumar, Xinluo Zhao and Yoshinori Ando
(Department of Materials Science and Engineering, Meijo
University, Japan)

P1.05.8

The role of nitrogen in nanotube formation

Chao Hsun Lin1, 2, Chih Ming Hsu1, Hui Lin Chang1, and Cheng
Tzu Kuo1
(1Department of Materials Science and Engineering, National
Chiao Tung University)
(2Photoetching Laboratory, Industrial Technology Research
Institute, Taiwan)

xvii

P1.05.9

Possibilities of improving mechanical and electrical properties of

Portland cement by addition of carbon nanotubes
A.Madronero and J.I.Robla
(CENIM, Spain)

P1.05.10

Observations of nanotube and 'celery' structures following

diamond CVD on single crystal diamond substrates
J.R.Petherbridge1, M.Baines2, P.W.May1 and D.Cherns2
(1School of Chemistry, University of Bristol, UK)
2
( H H Wills Physics Laboratory, Bristol, UK)

P1.05.11

Theoretical analysis on the diameter distributions of carbon

nanotubes by CVD methods
Y.B.Zhu, W.L.Wang, K.J.Liao, C.G.Hu, Y.Ma and C.Z.Cai
(Department of Applied Physics, Chongqing University, PR
China)

P1.05.12

Electrochemical properties of carbon-nanotubes

W.L.Wang, K.J.Liao, C.G.Hu, Y.Ma, C.Z. Cai and W.Zhu
(Department of Applied Physics, Chongqing University, PR
China)

xviii

Tuesday 23 July 2002

08:30 09:00

Registration in the Foyer of the Architecture Building

Session 4: Characterization
Chair:
A.Collins (Kings College London, UK)
9:00

4.1

Invited Presentation: Investigation of heteroepitaxial CVD diamond

by TEM and by photoluminescence microscopy
J.W.Steeds1, A.E. Mora1, S.J. Charles1, A.Wotherspoon1, and
2
J.E.Butler
(1University of Bristol, UK)
(2Naval Research Laboratory, USA)

9:30

4.2

Invited Presentation: EPR Studies of Paramagnetic defects

incorporating hydrogen in CVD diamond
M.E.Newton and C.Glover
(Department of Physics,
Kings College London, UK)

10:00

4.3

Ion beam Induced Charge Microscopy: A new tool for the

characterisation of diamond and other wide band gap semiconductor
devices
D.N.Jamieson, S.M.Hearne, E.Trajkov, C.Yang. B.Rout, and
S.Prawer, D.N.Jamieson, A.Fowler
(Microanalaytical Research Centre and School of Physics, The
University of Melbourne)

10:20

4.4

Analysis of traps in high quality CVD diamond films through the

temperature dependence of carrier dynamics
M.Marinelli1, E.Milani1, A.Paoletti1, A.Tucciarone1, G.VeronaRinati1, M.Angelone2, M.Pillon2
(1INFM, Universit di Roma, Italy)
(2Associazione EURATOM-ENEA sulla Fusion, Italy)

10:40

11:00-11:30

P1.03.18 - Thermally stimulated current analysis of Ion Implanted

Synthetic Diamond
E.Trajkov and S.Prawer

COFFEE BREAK & POSTER VIEWING

xix

Session 5: Nanotubes: Synthesis and Applications

Chair:
B.F.Coll (Motorola, Inc., USA)
11:30

5.1

Invited Presentation: Growth and Applications of Aligned Multiwall

Carbon Nanotubes.
W.I.Milne, K.B.K Teo, M.Chhowalla
(Cambridge University, UK)

12:00

5.2

Magnetic carbon nanofoam

A.V.Rode1, E.GGamaly1, A.G Christy1, S.T.Hyde1, R.G.Elliman1,
B.Luther-Davis1, A.I.Veinger2, J.Giapintzakis3, J.Androulakis3, and
C.Fotakis3
1
( Australian National University, Australia)
2
( Ioffee Physical-Technical Institute, Russia)
(3Institute of Electronic Structure and Laser, Heraklion, Greece)

12:20

5.3

Properties and applications of carbon nanotube coated electrodes as

electrical contacts and couplers
Y.Tzeng, C.Liu and Y.Chen
(Auburn University, USA)

12:40

5.4

Carbon Nanotubes Growth By CVD on Graphite Fibers

S.Zhu1, C-H.Su2, J.C.Cochrane1, S.L.Lehoczky2, I.Muntele3, and
D.Ila3
(1USRA, NASA/Marshall Space Flight Center, USA)
2
( Microgravity Science and Applications Department,
NASA/Marshall Space Flight Center, USA)
(3Center for Irradiation of Materials, Alabama A&M University,
USA)

13:00-14:15

LUNCH

Session 6: Devices
Chair:
H.Karawada (Waseda University, Japan)

xx

14:15

6.1

Invited Presentation: Miniature X-ray Sources with Diamond

Electrodes
C.Ribbing and K.Hjort
(Uppsala University, Sweden)

14:45

6.2

Nanocrystalline Diamond MEMS/Resonators

J.E. Butler1, D. S.Y. Hsu1, B.H. Houston2, X. Liu2, J. Vignola2, T.
Feygelson3, J.Wang4, and C.T.-C. Nyguen4
(1Code 6174, Naval Research Laboratory, Washington DC 20375
USA)
(2
Code 7136, Naval Research Laboratory, Washington DC 20375
USA)
(3
GeoCenters Inc., Fort Washington MD 20639 USA)
(4
Center for Integrated Wireless Microsystems (WIMS), Dept. of
EECS, University of Michigan, Ann Arbor, Michigan 48109 USA)

15:05

6.3

Al Schottky contacts and oxidised lines as gates in H-terminated

diamond in-plane transistors
J.A.Garrido1, B.Rezek1, C.E.Nebel1, M.Stutzmann1, G.Rosel1,
1
1
2
2
R.Todt , M.-C Amann , E.Snidero , and P.Bergonzo
(1Walter Schottky Institut, Technische Universitt, Mnchen,
Germany)
(2LIST: CEA-RechercheTechnology / DIMIR / SIAR / Saclay,
France)

15:25

6.4

Cryogenic operation of surface channel diamond field-effect

transistors
H.Ishizaka1,2, H.Umezawa1,2, M.Tachiki1,2and H.Kawarada1,2
1
( School of Science and Engineering, Waseda University, Japan)
(2CREST, JST, Japan)

15:45-16:10

COFFEE BREAK & POSTER VIEWING

xxi

Session 7: Nitrides
Chair:
S.P.Lau (Nanyang Technological University, Singapore)
16:10

7.1

Invited Presentation: AlN/Diamond heterostructures for LED

applications
C.Nebel, C. Miskys, J.Garrido, M.Hermann, O.Ambacher,
M.Eickhoff, M.Stutzmann
(Walter Schottky Institut, Technische Universitt Mnchen,
Germany)

16:40

7.2

Fundamental role of ion bombardment for the synthesis of cubic

boron nitride films
H.Hofsss, H.Felmermann, S.Eyhusen, and C.Ronning
(University Gottingen, Germany)

17:00

7.3

Preparation of Low Stress Cubic Boron Nitride Film using

Magnetron Sputtering
I.Bello, M.K.Chan, Y.C.Chan, Q.Li, W.J.Zhang, S.T.Lee, Y.Lifshitz
(City University of Hong Kong, China)

17:20

7.4

Well-crystallized solid solutions between carbon and boron nitride

M.Wakatsuki, Y.Kakudate, K.Yamamoto, H.Yokoi, S.Usuba and
S.Fujiwara
(National Institute of Advanced Industrial Science and Technology:
AIST, Japan)

17:40

7.5

Fluorine Chemistry Applied to Form Thick (>1m) cBN Films by

ECR
C.Y.Chan, W.J.Zhang, X.M.Meng, K.M Chan, Y.Lifshitz. S.T.Lee
and I.Bello
(City University of Hong Kong, China)

18:00

END OF DAY: FREE EVENING

xxii

Wednesday 24 July 2002

08:00 08:30

Registration in the Foyer of the Architecture Building

Session 8: Nanodiamond
Chair:
D.M.Gruen (Argonne National Laboratory, USA)
8:30

8.1

Invited Presentation: Nitrogen-doped ultrananocrystalline diamond

J.A.Carlisle, J.Birrell, J.E.Gerbi, O.Auciello, J.M.Gibson and
D.M.Gruen
(Argonne National Laboratory, USA)

9:00

8.2

The Characterization and Electrochemical Responsiveness of BoronDoped Nanocrystalline Diamond Thin-Film Electrodes
Y.Show, M.Witek, P.Sonthalia and G.M.Swain
(Michigan State University, USA)

9:20

8.3

Possible Mechanism for Nanocrystalline Diamond Formation in

Fused Silica
I.Andrienko, D.N.Jamieson, J.L.Peng, J.C.McCallum, P.G.Spizzirri,
and S.Prawer
(School of Physics, University of Melbourne)

9:40

8.4

Growth and size dependant Properties of Nano-crystalline Diamond

Films
L.C.Chen1, K.H.Chen2, J.J.Wu3 and W.F.Pong4
(1Center for Condensed Matter Sciences, National Taiwan
University, Taiwan)
(2Institute of Atomic and Molecular Sciences, Academia Sinica,
Taiwan)
(3Department of Chemical Engineering, National Taiwan University,
Taiwan)
(4Tamkang University, Taiwan)

10:00

8.5

Substrate Pretreatment Needed for Nucleation of Nanocrystalline

Diamond Films
S.T.Lee, Y.Lifshitz
(City University of Hong Kong, China)

10:20-10:50

COFFEE BREAK & POSTER VIEWING

xxiii

Session 9: Computing in Diamond

Chair:
D.N.Jamieson (The University of Melbourne, Australia)
10:50

9.1

Quantum Computing: Whats all the fuss about?

S.Prawer, D.N.Jamieson and A.Fowler
(Special Research Centre for Quantum Computer Technology,
School of Physics, The University of Melbourne, Australia)

11:20

9.2

Invited Presentation: Defect centres in diamond for quantum

computing
N.B.Manson, M.J.Sellars
(Australian National University, Australia)

Session 10: Modelling of Nanotubes

Chair:
N.Marks (The University of Sydney, Australia)
11:50

10.1

Kinetics of nanotube growth mediated by surface diffusion

O.A. Louchev
(Advanced Materials Laboratory, National Institute for Materials
Science, Japan)

12:10

10.2

Positional uncertainty of nanoscale diamond rods under thermal

load: a molecular dynamics study
1
G.Leach, 2S.Russo and 3S.Prawer
(1School of Computer Science, RMIT, Australia)
(2Department of Applied Physics, RMIT, Australia)
(3School of Physics, The University of Melbourne, Australia)

12:30

10.3

I-V characteristics and tunneling effect of carbon nanotubes: a

theoretical study
R.Q.Zhang, Y.Q Feng, K.S Chan, H.F.Cheung and S.T.Lee
(City University of Hong Kong, China)

13:00

DEPARTURE FOR CONFERENCE TOUR TO PHILIP ISLAND

xxiv

Thursday 25 July 2002

08:00 08:30

Registration in the Foyer of the Architecture Building

Session 11: Electrochemistry

Chair:
J.A.Carlisle (Argonne National Laboratory, USA)
8:30

11.1

Invited Presentation: Conducting Diamond Thin-Films in

Electrochemistry
G.M.Swain
(Michigan State University, USA)

9:00

11.2

Fabrication and Application of DiaChem electrodes

M.Fryda1, TH.Matthee1, S. Mulcahy1, A.Hampel2, l.Schaffer2,
2
I.Troster
(1CONDIAS GmbH, Germany)
(2Fraunhofer, Germany)

9:20

11.3

The interaction of oxidized boron-doped diamond electrode surfaces

with solution-phase analytes
D.A.Tryk1,2,3, H.Tachibana1, S.Funyu1, H.Inoue1,2, T.Fukazawa3,
3
3
3
3
H.Notsu , E.Popa , T.Kondo , A.Fujishima
(1Tokyo Metropolitan University, Japan)
(2CREST, Japan Science and Technology, Japan)
3
( University of Tokyo, Japan)

9:40

11.4

Electrochemical Properties of CVD Diamond Films VacuumAnnealed at 1500-1640 C

Yu.V.Pleskov1, M.D.Krotova1, V.G.Ralchenko2, A.V.Khomich3,
and R.A.Khmelnitskiy4
(1Frumkin Institute of Electrochemistry, Russia)
2
( General Physics Institute, Russia)
(3Institute of Radio Engineering and Electronics, Russia)
(4Lebedev Physical Institute, Russia)

10:00-10:30

COFFEE BREAK & POSTER VIEWING

xxv

Session 12: Diamond Surfaces

Chair:
C.Nebel (Walter Schottky Institut, Technische Universitt, Mnchen, Germany)
10:30

12.1

Invited Presentation: Hydrogen on Diamond: a Key Issue for

Surface Electronic Properties.
J.Ristein
(University of Erlangen, Germany)

11:00

12.2

Invited Presentation: Field electron emission microscopy of

diamond and related materials
A.V.Karabutov1, V.D.Frolov1, V.I.Konov1, S.M.Pimenov1,
V.Ralchenko1 and K.Gordeev2
(1General Physics Institute, Russia)
2
( Central Research Institute of Materials, Russia)

11:30

12.3

At Distance Interaction of Suprathermal Highly Charged Ions

Above Diamond Surfaces
J.P.Briand1, M.Benhachoum1, A.Gicquel2 and J.Achard2
(1ERIS, Universite P.&M.Curie, France)
2
( LIMHP, Universite Paris Nord, France)

11:50

12.4

Structure and properties of high temperature annealed CVD

diamond
V.Ralchenko1, L.Nistor2, E.Pleuler3, A.Khomich4 and
R.Khmelnitskii5
(1General Physics Institute, Russia)
2
( National Institute for Applied Materials Physics, Romania)
3
( Fraunhofer Institute of Applied Solid State Physics, Germany)
(4Institute of Radio Engineering and Electronics, Russia)
(5P.N.Lebedev Physical Institute, Russia)

12:10-13:40

LUNCH

xxvi

Session 13: Hetero-Epitaxy

Chair:
J.W.Steeds (University of Bristol, UK)
13:40

13.1

Flat Epitaxial Diamond/Ir(001) interface visualized by High

Resolution Transmission Electron Microscopy
F.Hormann1, H.Y.Peng2, Th.Bauer1, Q.Li2, M.Schreck. Y.Lifshitz2,
3
, S.T.Lee2, B.Stritzker1
(1 Universitt Augsburg, Germany
2
( COSDAF, City University of Hong Kong, P.R.China)
(3On leave from Soreq NRC, Israel)

14:00

13.2

Surface orientation effect of diamond growth on platinum substrate

H.Yamamoto, Y.Naoi, S.Shinjo, K.Noami, N.Kubota, T.Inaoka and
Y.Shintani

14:20-14:40

COFFEE BREAK

14:40-16:10

POSTER PREVIEW SESSION II

Authors who have agreed to participate will make a short, maximum 3 minute, one
overhead transparency, oral presentation that serves to 'advertise' the main point of the
poster.
P2.01.3

H.Hofsss

Lattice Location studies of rare earth impurities in

3C- 4H- and 6H-SiC

P2.01.4

T.Katsuno

Properties of amorphous carbon nitride a-CNx films

prepared by the layer-by-layer method

P2.01.9

Ichihito Narita

Atomic structure of BN nanotubes studied by multislice method and molecular orbital calculations

P2.01.10

Ichihito Narita

Synthesis of boron nitride nanotubes by arc-melting

of NbB2 powder

P2.01.11

Takeo Oku

Formation and structures of multiply-twinned

nanoparticles with fivefold symmetry in chemical
vapor deposited boron nitride

P2.01.12

Yukihiro
Sakamoto

Preparation of Carbon Nitride using microwave

plasma CVD

xxvii

P2.01.16

Jun Xu

Visible electroluminescence of hydyogenated

amorphous silicon carbide prepared by using
organic carbon source

P2.01.17

R.Yakimova

Preparation and characterisation of well ordered

graphite films on silicon carbide surfaces

P2.02.1

A.S.Barnard

Ab initio modelling of stability of nanocrystalline

diamond morphologies

P2.02.5

Jun Xu

An Approach to Prepare Nanocrystalline Diamond

from Amorphous Silicon carbide Films by KrF
Excimer Laser Irradiation

P2.03.4

P.Shankar

Pitting Corrosion behaviour of HFCVD diamond

coated tool steel specimens

P2.03.6

K.S.Song

Ozone Treated Channel Diamond FETs

P2.04.1

K.Bharuth-Ram

The metallic inclusions in synthetic diamond grits

investigated by Mssbauer spectroscopy and
electron microprobe analysis

P2.04.2

A.Bobrov

Sulfide medium of diamond crystallization:

experimental and natural aspects

P2.04.8

K.Nakazawa,

Nonlinear increase of excitonic emission in

synthetic type IIa diamond

P2.04.10

I.C.Popescu

High pressure apparatus for diamond synthesis: An

analysis of Factors Affecting the hard tools
endurance

P2.04.12

E.Trajkov

NV Centre Distributions in HPHT Diamond

P2.05.1

V.Amornkitbamr
ung

Surface and quality modification of diamond-like

carbon films by CO2 laser heating assisted hot
filament chemical vapour deposition

P2.05.3

G.Cicala

Morphological and structural study of plasma

deposited fluorocarbon films at different thickness

P2.05.5

D.Sheeja

A comparative study between pure and aluminium

containing amorphous carbon films using FCVA
with high substrate pulse biasing

P2.05.6

F.L.Freire Jr

Hard Amorphous carbon-fluorine films deposited bt

PECVD using C2H2-CF4 ags mixtures as percursor
atmospheres

xxviii

P2.05.8

H. Hofsss

Diffusion of self and foreign atoms in tetrahedral

amorphous carbon (ta-C)

P2.05.15

T.Sharda

New applications for highly stressed carbon films

on silicon substrate

P2.05.19

A.Tamanyan

Nanocrystalline diamond films deposited by high

repetition rate pulsed laser deposition (PLD)
technique

P2.05.22

I.Sh.Trakhtenberg Morphology of DLC surface and its change at ion

bombardment

16:10-18:00 POSTER SESSION II

Session P2.01: Nitrides and Carbides
P2.01.1

Carbon nitride polycrystalline powder prepared by solvothermal

method
Chunbao Cao, Qiang Lu, and Hesun Zhu
(Research Center of Materials Science, Beijing Institute of
Technology, PR China)

P2.01.2

Investigations of GaN films grown at low temperature for electronic

applications
Z.Hassan1, Z.Jamal1, M.J.Abdullah1, K.Ibrahim1, M.E.Kordesch2,
W.Halverson3, and P.C.Colter3
(1School of Physics, Universiti Sains Malaysia, Malaysia)
2
( Department of Physics and Astronomy, Ohio University, USA)
(3Spire Corporation, USA)

P2.01.3

Lattice Location studies of rare earth impurities in 3C- 4H- and 6HSiC
U.Vetter1, H. Hofsss1, M.Kietrich2 and ISOLDE Collaboration2
(12nd Physical Institute, University Gottingen, Germany)
(2CERN, Switzerland)

P2.01.4

Properties of amorphous carbon nitride a-CNx films prepared by the

layer-by-layer method
T.Katsuno and S.Nitta
(Department of Electrical Engineering, Gifu University, Japan)

xxix

P2.01.5

Structure and mechanical properties of boron carbide coatings

formed by electromagnetically accelerated plasma spraying
J.Kitamura1, S.Usuba2, Y.Kakudate2, H.Yokoi2, K.Yamamoto2,
A.Tanaka2 and S.Fujiwara2
1
( Joint Research Consortium of Frontier Carbon Technology, JFCC,
Japan)
(2 National Institute of Advanced Industrial Science and
Technology: AIST, Japan)

P2.01.6

Steady-state and transient room-temperature photoluminescence of

AIN films, prepared by RF magnetron sputtering
V.Ligatchev, T.K.S.Wong, S.F.Yoon, J.Ahn, Rusli
(School of Electronic Engineering, Nanyang Technological
University, Singapore)

P2.01.7

Growth of cBN films by DC-bias assisted RF induction thermal

plasma chemical vapor deposition
J.Yu and S.Matsumoto
(Advanced Materials Laboratory, National Institute for Materials
Science, Japan)

P2.01.8

Synthesis of heterofullerene using a direct BN substitution reaction

of fullerene
T.Nakamura1, K.Ishikawa1, A.Goto2, M.Ishihara1, T.Ohana1 and
1
Y.Koga
(1National Institute of Advanced Industrial Science and Technology,
Japan)
(2Joint Research Consortium of Frontier Carbon Technology, Japan
Fine Ceramics Center, Japan)

P2.01.9

Atomic structure of BN nanotubes studied by multi-slice method and

molecular orbital calculations
Ichihito Narita and Takeo Oku
(Institute of Scientific and Industrial Research, Osaka University,
Japan)

P2.01.10

Synthesis of boron nitride nanotubes by arc-melting of NbB2 powder

Ichihito Narita and Takeo Oku
(Institute of Scientific and Industrial Research, Osaka University,
Japan)

xxx

P2.01.11

Formation and structures of multiply-twinned nanoparticles with

fivefold symmetry in chemical vapor deposited boron nitride
Takeo Oku1, Kenji Hiratga2, Toshitsugu Matsuda3 and Toshio Hirai4
(1Institute of Scientific and Industrial Research, Osaka University,
Japan)
(2Institute for Materials Research, Tohoku University, Japan)
(3JMC New Materials Inc., Japan)
(4Tokyo University of Science, Japan)

P2.01.12

Preparation of Carbon Nitride using microwave plasma CVD

Yukihiro Sakamoto and Matsufumi Takaya
(Department of Precision Engineering, Chiba Institute of
Technology)

P2.01.13

Helium effusion measurements for studying the microstructure of a SiC:H films deposited by dc sputtering
(R.Saleh1, L.Munisa1 and W.Beyer2)
1
( Jurusan Fisika, Universitas Indonesia, Indonesia)
(2Institut fur Photovoltaik, Germany)

P2.01.14

The experimental research of regularities an irreversible phase

transformation rBN to cBN at pressure 5.6GPa and room
temperature
L.K.Shevdov1, N.V.Novikov1, Valery L. Levitas2, and I.A. Petrusha1
1
( Institute for Superhard Materials of the National Academy of
Sciences of Ukraine, Ukraine)
(2Department of Mechanical Engineering, Texas Tech University,
USA)

P2.01.15

Comparison of SiC sublimation epitaxial growth in graphite and

TaC coated crucibles
M.Syvjrvi, R.Yakimova, R.R.Ciechonski and E.Janzen
(Department of Physics and Measurement Technology, Linkping
University, Sweden)

P2.01.16

Visible electroluminescence of hydyogenated amorphous silicon

carbide prepared by using organic carbon source
Xiaohui Huang, Tianfu Ma, Jun Xu, Wei Li, Jiafang Du and Kunji
Chen
(National Laboratory of Solid State Microstructures and Department
of Physics, Nanjing University, PR China)

xxxi

P2.01.17

Preparation and characterisation of well ordered graphite films on

silicon carbide surfaces
R.Yakimova1, M. Syvjrvi1, T.Iakimov1, T.Balasubramanian2,
T.Kihlgren3, L.Wallden3 and E.Janzen1
1
( Department of Physics and Measurement Technology, Linkping
University, Sweden)
(2MAX-lab, Lund University, Sweden)
(3Solid State Physics, Chalmers University, Sweden)

P2.01.18

The mechanism of cBN growth using fluorine chemistry deduced

from optical emission spectroscopy (OES) of the growth species and
complimentary characterizations
W.J.Zhang, C.Y.Chan, X.M.Meng, I.Bello, Y.Lifshitz and S.T.Lee
(Center of Super-Diamond and Advanced Films: COSDAF & Dept
of Physics and Materials Science, City University of Hong Kong,
P.R.China)

P2.01.19

Raman and X-ray photoelectron spectroscopy study of CNx films

synthesized by nitrogen ion implantation into diamond and graphite
W.T.Zheng1,3, P.J.Cao1,2, J.J.Li1, C.Dong3 and Z.S.Jin1
(1Department of Materials Science and National Laboratory of
Superhard Materials, Jilin University, PR China)
(2Beijing Laboratory of Vacuum Physics, Institute of Physics &
Center for Condensed Matter Physics, Chinese Academy of Science,
PR China)
(3National Key Laboratory of Materials Surface Modification by
Laser, Ion and Electron, University of Technology, PR China)

Session P2.02: Nanodiamond

P2.02.1

Ab initio modelling of stability of nanocrystalline diamond

morphologies
A.S.Barnard, S.P.Russo and I.K.Snook
(Department of Applied Physics, RMIT, Australia)

xxxii

P2.02.2

Nanocrystalline Diamond Materials Properties

J.E.Butler1, T.Feygelson2, B.Pate3, K.H.Chen4, S.Chattopadhyay5,
L.C.Dhen5, J.Philip6 and P.Hess6
1
( Naval Research Laboratory, USA Institute of Physical Chemistry,
USA)
(2GeoCenters Inc, USA)
(3Dept of Physics, Washington State University, USA)
(4Institute for Atomic and Molecular Science, Academia Sinica,
Taiwan)
(5Center for Condensed Matter Sciences, National Taiwan
University, Taiwan)
(6University of Heidelberg, Germany)

P2.02.3

Growth of hard and flat nanostructure diamond on Si substrate by

microwave plasma chemical vapour deposition with biased
enhanced nucleation
Y.Hayashi, Y.Matsushita, S.Suzuki, T.Soga and T.Jimbo
(Department of Environmental Technology and Urban Planning,
Nahoya Institute of Technology, Japan)

P2.02.4

Structural analysis on nanocrystalline diamond by electron energy

loss spectroscopy
K.Okada, K Kimoto, S.Komatsu and S.Matsumoto
(Advanced Materials Laboratory, National Institute for Materials
Science, Japan)

P2.02.5

An Approach to Prepare Nanocrystalline Diamond from Amorphous

Silicon carbide Films by KrF Excimer Laser Irradiation
Jun Xu1,2, Li Wang1, Wei Li1, Zhifeng Li2, Tianfu Ma1 and Kunji
1
Chen
(1National Laboratory of Solid State Microstructures and
Department of Physics, Nanjing University, PR China)
(2National Laboratory of Infrared Physics, Chinese Academy of
Science, PR China)

P2.02.6

Investigation of kinetic features of detonation synthesis

ultradispersed diamonds by infrared and ultraviolet spectroscopy
E.V.Mironov1, A.Ya. Koretz1 and E.A. Petrov2
(1Krasnoyarsk state technical university, Russia)
(2Federal Research Production Center Altay, Russia)

xxxiii

Session P2.03: Surfaces

P2.03.1

Surface Chemistry of Nanodispersed Diamonds

G.Bogatyreva, M.Marinich and E.Ishchenko
(Institute for Superhard Materials of the National Academy of
Sciences of Ukraine, Ukraine)

P2.03.2

Local Nanometric Graphitization of CVD Diamond by highly

charged ions
J.P.Briand1, N.Bechu1, A.Gicquel2, J.Achard2, .Z.Xie3 and
G.Machicoane3
1
( ERIS, Universite P.&M.Curie, France)
(2KIMHP, University Paris Nord, France)
(3Berkeley Ion Equipment Inc, USA)

P2.03.3

Interfacial Segregation of Ti-Al Phases in the Brazing of Diamond

Grits with a Cu-Al-Ti Active Filler Metal
Cheng Liang1,2, and Sun-Tian Lin2
(1Department of Materials and Mineral Resources Engineering,
National Taipei University of Technology, Taiwan)
(2Department of Mechanical Engineering, National Taiwan
University of Science and Technology, Taiwan)

P2.03.4

Pitting Corrosion behaviour of HFCVD diamond coated tool steel

specimens
J.G.Buijnsters1, R.V.Subba Rao2, P.Shankar1, W.J.P. van Enckevort1,
1
2
1
J.J.Schermer , A.Gebert and J.J. ter Meulen
(1Research Institute for Materials, University of Nijmegen, The
Netherlands)
(2IWF Dresden, Institute for Metallic Materials, Germany)

P2.03.5

Modification of diamond surface by compounds of boron and

phosphorus
E.P.Smirnov
(The State Institute of Technology, St Petersburg, Russia)

P2.03.6

Ozone Treated Channel Diamond FETs

K.S.Song1,2, T.Sakai1,2, H.Kanazawa1,2, Y.Araki1,2, H.Umezawa1,2,
M.Tachiki1,2 and H.Kawarada1,2
(1School of Science and Engineering, Waseda University, Japan)
(2CREST, JST, Japan)

xxxiv

Session P2.04: Natural single crystal, high pressure and shock synthesis diamond
P2.04.1

The metallic includions in synthetic diamond grits investigated by

Mssbauer spectroscopy and electron microprobe analysis
V.L.Mbele, K.Bharuth-Ram and D.Naidoo
(Physics Department, University of Durban-Westville, South Africa)

P2.04.2

Sulfide medium of diamond crystallization: experimental and natural

aspects
A.Bobrov1, Yu.Litvin2, and V.Butvina1
(1Department of Petrology, Moscow State University, Russia)
2
( Institute of Experimental Mineralology, Russian Academy of
Sciences, Russia)

P2.04.3

Analysis of HT Treated diamonds

John G. Chapman
(Gemstyle Ltd, Western Australia, Australia)

P2.04.4

Formation of Impurity Consistencies of Diamond single crystals in

growing processes
N.V.Novikov, S.A.Ivakhnenko, O.A.Zanevskiy, and
T.A.Nachalnaya
(Institute for Superhard Materials of the National Academy of
Sciences of Ukraine, Ukraine)

P2.04.6

Characteristics of Nakyn Kimberlite Field Diamonds according to

spectroscopy data
S.I.Mityukhin and V.P.Mironov
(ALROSA Co Ltd, Russia)

P2.04.7

The properties of Semiconducting diamonds Grown by Temperature

Gradient Method
N.V.Novikov, T.A.Nachalnaya, V.G. Malogolovets, G.A.Podzyarey,
L.A. Romanko, S.A.Ivahknenko and O.A.Zanevskiy
(V.Bakul Institute for Superhard Materials of the National Academy
of Science of Ukraine, Ukraine)

P2.04.8

Nonlinear increase of excitonic emission in synthetic type IIa

diamond
K.Nakazawa, H.Umezawa, M.Tachiki and H.Kawarada
(School of Science and Engineering, Waseda University, Japan)

P2.04.9

Mechanism of single and polycrystalline diamonds synthesis

V.Poliakov
(Department of Mechanics, Federal University of Parana, Brazil)

xxxv

P2.04.10

High pressure apparatus for diamond synthesis: An analysis of

Factors Affecting the hard tools endurance
P.V.Georgeoni, I.C.Popescu and G.Dinca
(Dacia Synthetic Diamonds Factory, Romania)

P2.04.11

The role of the graphitization degree on the high pressure-high

temperature diamond synthesis process
A.L.D.Skury, G.S.Bobrovnitchii and S.N.Monteiro
(Universidade Estadual do Nortee Fluminense Centro de Ciencia e
Technologia, Brasil)

P2.04.12

NV Centre Distributions in HPHT Diamond

E.Trajkov1, S.Prawer1, N.Manson2 and P.Munroe3
(1Centre for Quantum Computing Technology, School of Physics,
The University of Melbourne, Australia)
(2Laster Physics Centre, Australian National University, Australia)
(3Electron Microscope Unit, University of New South Wales,
Australia)

P2.04.13

Spectroscopic properties of the natural and synthetic coloured

diamonds
Maxim A.Viktorov1, Galina K. Chachatryan2, Yaroslav L. Lantsev1
1
and Roman V.Shabalin
(1Department of Geology, Moscow State University, Russia)
(2Institute of Diamonds, Russian Academy of Natural Sciences,
Russia)

P2.04.14

Optical study of structural properties of 3H defects in Diamond

I.I.Vlasov1, V.G.Ralchenko1 and E.Goovaerts2
(1General Physics Institute, Russia)
2
( Department of Physics, University of Antwerp, Belgium)

P2.04.15

The structure of hollow shock-generated nanodiamonds

G.S.Yurjev2 and A.L.Vereshagin1
(1Siberian Centre of Synchrotron Radiation at Institute of Nuclear
Physics of SB RAS, Russian Federation)
(2Biisk Technological Institute, Russian Federation)

xxxvi

Session P2.05: Diamond-Like Carbon

P2.05.1

Surface and quality modification of diamond-like carbon films by

CO2 laser heating assisted hot filament chemical vapour deposition
V.Amornkitbamrung and Ong-On Topon
(Department of Physics, Khon Kaen University, Thailand)

P2.05.2

The use of multiplex IBM/PACVD method in the preparation of

diamond-like films on metal substrates
F.Cerny, J.Gurovic, D.Palamarchuk and M.Zoriy
(Department of Physics, Czech Technical University, Czech
Republic)

P2.05.3

Morphological and structural study of plasma deposited

fluorocarbon films at different thickness
G.Cicala1, A.Milella2, F.Palumbo1, P.Favia2 and R.dAgostino2
1
( Istituto di Metodologie Inorganiche e dei Plasmi, Universita di
Bari, Italy)
(2Dipartimento di Chimica, Universita di Bari, Italy)

P2.05.4

Molecular dynamics simulations of structure in plasma deposited

diamond-like alloys
N.C.Cooper1, M.M.M.Bilek1, N.A.Marks1, D.G.McCulloch2,
D.R.McKenzie1 and A.R.Merchant2
1
( Department of Applied and Plasma Physics, The University of
Sydney, Australia)
2
( Department of Applied Physics, RMIT University, Australia)

P2.05.5

A comparative study between pure and aluminium containing

amorphous carbon films using FCVA with high substrate pulse
biasing
D.Sheeja, B.K.Tay, L.Yu and S.P.Lau
(School of Electrical and Electronic Engineering, Nanyang
Technological University, Singapore)

P2.05.6

Hard Amorphous carbon-fluorine films deposited by PECVD using

C2H2-CF4 ags mixtures as percursor atmospheres
L.G.Jacobsohn1, M.E.H. Maia da Costa1, V.J.Trava-Airoldi2 and
1
F.L.Freire Jr.
1
( Departamento de Fisica, Pontificia Universidade Catolica do Rio
de Janeiro, Brazil)
(2Instituto Nacional de Pesquisas Espaciais, Brazil)

xxxvii

P2.05.7

Optical and mechanical properties of hydrogenated amorphous

carbon thin films by magnetron sputtering using Ar+H2 and He+H2
gas mixtures
Akira Higa, Takehiro Maehama and Minoru Toguchi
(Department of Electric and Electronics engineering, University of
the Ryukyus, Japan)

P2.05.8

Diffusion of self and foreign atoms in tetrahedral amorphous carbon

(ta-C)
H.Kroger1, C.Ronning1, M.Schwickert1, H. Hofsss1, A.Bergmeier2,
L.Gorgens2, P.Neumaier2 and G.Dollinger2
1
( 2nd Physical Institute, University Gottingen, Germany)
(2Physics Department, Technical University Munich, Germany)

P2.05.9

Superhard diamond and diamond-like carbon coatings by PVD and

CVD processes
Ashok Kumar and A.K Sikder
(Department of Mechanical Engineering, University of South
Florida, USA)

P2.05.10

Nanostructuring of amorphous carbon films by C ion implantation

O.Kutsay , I.Bello, Y.Lifshitz, S.T.Lee, X.Meng, V.Kremnican,
C.W.Lam
(Center of Super-Diamond and Advanced Films (COSDAF) and
Department of Physics and Material Science, City University of
Hong Kong, PR China)

P2.05.11

Effect of ion-bombardment on the deposition of a-CNx:H films in

CH4/N2 rf plasma
N.Mutsukura and Y.Kaigo
(School of Engineering, Tokyo Denki University)

P2.05.12

Photoelectrical properties of pulsed laser deposited boron doped pcarbon/n-silicon and phosphorous doped n-carbon/p-silicon
heterojunction solar cells
M.Rusop1, S.M.Mominuzzaman3, X.M.Tian1, T.Soga1, T.Jimbo1, 2
and M.Umeno4
(1Department of Environmental Technology and Urban Planning,
Nagoya Institute of Technology, Japan)
(2Research Center for Micro Structure Devices, Nagoya Institute of
Technology, Japan)
(3Department of Electrical and Electronic Engineering, Bangladesh
University of Engineering & Technology, Bangladesh)
(4Department of Electronic Engineering, Chubu University, Japan)

xxxviii

P2.05.13

Structural and photoelectrical properties of amorphous carbon

nitride films synthesized by pulsed laser deposition with different
laser fluences, target to substrate distances and substrate
temperatures
M.Rusop1, T.Soga1, T.Jimbo1, 2
(1Department of Environmental Technology and Urban Planning,
Nagoya Institute of Technology, Japan)
(2Research Center for Micro Structure Devices, Nagoya Institute of
Technology, Japan)

P2.05.14

Tetrahedral and boron doped amorphous carbon films grown by

pulsed laser deposition using camphoric carbon target
M.Rusop1, T.Nezasa3, T.Kinugawa1, T.Soga1 and T.Jimbo1,2
(1Department of Environmental Technology and Urban Planning,
Nagoya Institute of Technology, Japan)
(2Research Center for Micro Structure Devices, Nagoya Institute of
Technology, Japan)

P2.05.15

New applications for highly stressed carbon films on silicon

substrate
T.Sharda, T.Soga and T.Jimbo
(Department of Environmental Technology and Urban Planning,
Nagoya Institute of Technology, Japan)

P2.05.16

Thermodynamic conditions of ta-C formation in thermoelastic peak

of low energy 12C+ ion in carbon
A.I.Kalinichenko1 and V.E.Strelnitskij2
(1Kharkov National University, Ukraine)
(2National Science Center, Kharkov Institute of Physics and
Technology, Ukraine)

P2.05.17

Wide-aperture filtered vacuum arc system for DLC films synthesis

I.I.Aksenov, V.E.Strelnitskij, V.V.Vasilyev and A.O.Omarov
(2National Science Center, Kharkov Institute of Physics and
Technology, Ukraine)

P2.05.18

Tribological properties of diamond-like carbon films produced by

different deposition techniques
M.Suzuki1, T.Watanabe1, A.Tanaka2 and Y.Koga2
(1 Japan Fine Ceramics Center: JFCC, Japan)
(2 Research Center for Advanced Carbon Materials, AIST, Japan)

P2.05.19

Nanocrystalline diamond films deposited by high repetition rate

pulsed laser deposition (PLD) technique
A.Tamanyan, G.Tamanyan, J.L.Peng, I.Andrienko, S.Prawer and
V.Gurarie
(School of Physics, The University of Melbourne, Australia)

xxxix

P2.05.20

Tribological properties of DLC films using various precursors under

different humidity conditions
A.Tanaka1, T.Nishibori2, M.Suzuk3i, and K.Maekawa2
(1 Research Center of Advanced Carbon Materials, AIST, Japan)
(2 Ibraki University, Japan)
(3Joint Research Consortium of Frontier Carbon Technology, JFCC,
Japan)

P2.05.21

Study of Surface Energy of Tetrahedral Amorphous Carbon Films

Modified in Various Gas Plasma
B.K.Tay, D.Sheeja, S.P.Lau and J.X.Guo
(School of Electrical and Electronic Engineering, Nanyang
Technological University, Singapore)

P2.05.22

Morphology of DLC surface and its change at ion bombardment

I.Sh.Trakhtenberg1, A.P.Rubstein1, S.A.Plotnikov1, A..Vladimirov1,
A.E.Davletshin1 and K.Uemura2
(1 Metal Physics Institute, Ural Branch Division RAS, Russia)
(2 ITAC Ltd, Japan)

P2.05.24

Mechanical Properties of DLC (ta-C) films deposited on orthopedic

substrates
W.Veiga1, V.P.Poliakov1, D.J de M.Siqueira1 and G.G. Kirpilenko2
(1Federal University of Parana, UFPR, Brazil)
(2Patinor Coating Ltd, Russia)

P2.05.25

Characterization of metal-doped CNx films deposited by cathodic

arc evaporation (CAE)
Da-Yung Wang1, Yin-Yu Chang2 and WeiTe Wu2
(1Center for Applied Science and Technology, Mingdao University,
Taiwan)
(2Department of Material Engineering, National Chung-Hsing
University, Taiwan)

P2.05.26

Synthesis of amorphous carbon films by plasma-based ion

implantation with simultaneous application of DC and pulse bias
T.Watanabe1, K.Yamamoto2, O.Tsuda1, Y.Koga2, A.Tanaka2 and
1
O.Takai
(1Japan Fine Ceramics Center, Joint Research Consortium of
Frontier Carbon Technology, Japan)
(2Research Center for Advanced Carbon Materials, National
Institute of Advance Industrial Science and Technology, Japan)
(3Department of Material Processing and Engineering, Nagoya
University, Japan)

xl

P2.05.27

Effect of substrate temperature on structure and chemical bonds of

carbon films deposited with mass selected carbon ion beam.
K.Yamamoto1, T.Watanabe2, K.Wazumi2, Y.Koga1 and S.Iijima1
(1 National Institute of Advanced Industrial Science and
Technology: AIST, Japan)
(2 Japan Fine Ceramics Center, Joint Research Consortium of
Frontier Carbon Technology, Japan)

P2.05.28

Rapid thermal Annealing Study on the metal Containing Amorphous

Carbon Films
P.Zhang, B.K.Tay, S.P.Lau and C.Y.Xiao
(School of Electronic Engineering, Nanyang Technological
University, Singapore)

P2.05.29

Golden Yellow carbon from renewable natural precursors

Maheshwar Sharon1, M.Bejoy1 and A.K.Chatterjee2
(1Department of Chemistry, IIT-Bombay, India)
2
( Energy System Engineering, IIT-Bombay, India)

19:00

CONFERENCE BANQUET

19.30

Dinner cruise on Port Phillip Bay

Depart from Victoria Harbour opposite Colonial Stadium
After dinner Speaker: Prof. Robert Hazen

xli

Friday 26 July 2002

Session 14: High Pressure and Natural Single Crystals
Chair:
M.Newton (Kings College London, UK)
8:30

14.1

Invited Presentation: The detection of colour-enhanced and

synthetic gem diamonds by optical spectroscopy
A.T.Collins
(Kings College London, UK)

9:00

14.2

The Argyle Mine and its Diamonds

John G. Chapman
(Gemstyle Ltd, Western Australia, Australia)

9:20

14.3

What can EPR tell us about the annealing of brown type IIa and IIb
natural diamond?
C.Glover, A.Connor, A.T.Collins, M.E.Newton
(Kings College London, UK)

09:40-10:20

COFFEE BREAK & POSTER VIEWING

Session 15: Diamond-Like Carbon

Chair:
Y.Lifshitz (City University of Hong Kong, China)
10:20

15.1

Invited Presentation: Ultrathin tetrahedral amorphous carbon films

deposited by filtered cathodic vacuum arc
S.P.Lau1, C.Y.Xiao1, X.Shi2, Z.Sun1 and B.K.Tay1
1
( Nanyang Technological University, Singapore)
(2Nanofilm Technologies International)

10:50

15.2

Invited Presentation: Atomistic simulation of energy and

temperature effects in amorphous carbon and diamond thin films
N.A.Marks, J.Bell, H.X. Pham, D.R. McKenzie, R.N.Tarrant and
M.M.M.Bilek
(The University of Sydney, Australia)

xlii

11:20

15.3

The characterization of amorphous carbon films deposited by ECR

plasma sputtering
T.Ohana1, T.Nakamura1, A.Goto2, A.Tanaka1 and Y.Koga1
(1National Institute of Advanced Industrial Science and Technology:
AIST, Japan)
(2Joint Research Consortium of Frontier Carbon Technology, JFCC,
Japan)

11:40

15.4

Presented as poster
The Effect Of Hydrogen Plasma Chemical Annealing on Electron
Field Emission of Amorphous Carbon Films
J.Xu, X.Huang, L.Wang, W.Li, K.Chen
(Nanjing University, China)
The Mechanism of Diamond from Energetic Species
Y.Lifshitz, Th. Kohler, Th. Frauenheim, I.Guzmann, A. Hoffman,
R.Q.Zhang, X.T.Zhou, S.T.Lee
Centre of Superhard Diamond and Advanced Films and Department
of Physics and Materials Science, City University Hong Kong,
Hong Kong SAR

Session 16: Closing Session

12:00-12:20

LATE NEWS

12:20

CONFERENCE CLOSE

xliii