US 20120090534A1

(19) United States

(12) Patent Application Publication (10) Pub. No.: US 2012/0090534 A1
(43) Pub. Date:

Schroeder et al.

(54)

SOLID STATE THERMOELECTRIC POWER

CONVERTER

(76) Inventors:
(21) Appl. No.:

Apr. 19, 2012

Publication Classi?cation

(51)

Int. C1.
0301; 11/02

(52)

us. c1. ........................................................ .. 117/81

(2006.01)

Jon Murray Schroeder, (U S);

Gerald Phillip Hirsch, (US)

(57)

13/374,129

High e?iciency conversion of heat energy to electrical energy

is achieved using a ring of metallic components and anodi

ABSTRACT

cally sliced, reduced barriers, high purity n-type and p-type

semiconductor Wafers. Energy produced by heating one set of

(22)

Filed:

?ns and cooling another set is extracted from a ring of bis

muth telluride based n-type Wafers and antimony telluride

Dec. 13, 2011

based p-type Wafers using make-before-break control of

Related US. Application Data

(60)

Division of application No. 11/259,922, ?led on Oct.

28, 2005, noW Pat. No. 8,101,846, Which is a continu

ation-in-part of application No. 10/154,757, ?led on

May 23, 2002, noW abandoned.

MOSfet sWitch banks. Standard AC frequencies and DC out

put result from recti?cation of make-before-break high fre
quency switched very high currents in the ring and a DC to AC

converter. Solar energy stored in porcelain fragments extends

the time that solar energy can be used as the heat source for the

thermoelectric generator device.

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SOLID STATE THERMOELECTRIC POWER

CONVERTER
RELATED APPLICATIONS

[0001] This application is a division of US. patent appli

cation Ser. No. 11/259,922 that is a continuation-in-part of
pending US. patent application Ser. No. 10/154,757, ?led
May 23, 2002, entitled Torus Semiconductor Thermoelec
tric Device published Nov. 27, 2003.
TECHNICAL FIELD

[0009]

US. Pat. No. 6,340,787 to Simeray discloses a ther

moelectric generator component of bismuth doped With anti

mony and bismuth tellurium doped With selenium Wherein
said components are arranged into a rod. Very loW voltages
are converted using a self-oscillating circuit at the expense of

poWer output.
[0010]

US. Pat. No. 6,172,427 describes the use ofa ther

moelectric generator device on the exhaust portion of a com

bustion-based car using an electrically driven Wheel Wherein

excess heat energy is converted to electric poWer for the
vehicle.

This invention relates to a circular array of semicon

[0011] Published US application 20040134200 to

Schroeder, et al., entitled Torus Semiconductor Thermoelec

ductor and conductive elements that comprise a high e?i

tric Chiller describes the combination of a semiconductor

ciency thermoelectric generator device. Energy generated by

thermoelectric generator device and absorption chiller to pro

duce refrigeration and facilitate the collection of Water from

[0002]

a temperature differential betWeen hot and cold ?ns of the

thermoelectric generator device is more ef?ciently converted

to electrical energy by a combination of both high e?iciency

semiconductor elements and a high frequency direct current
to direct current sWitching component. When combined With
an H-bridge the combination produces alternating current

output of various standard voltages and frequencies.

Improved cooling ef?ciency is obtained by increasing the

surface area of the cold ?ns. This is accomplished by splitting
and displacing the loWer portion of the cold ?n. This
improved ef?ciency device is especially suitable for conver
sion of solar energy to electricity by the use of a porcelain

based heat storage system.

BACKGROUND ART

[0003] Thermoelectric generator devices have been used

for many years for speci?c applications Where the simplicity
of design Warrants their use despite loW energy conversion

e?iciency.
[0004]

The voltage produced by a thermoelectric generator

device depends on the Seebeck voltage of the dissimilar met

als used. Seebeck voltages are higher for some semiconductor

materials especially n-type and p-type elements made prima

rily of mixtures of bismuth, tellurium, selenium and anti
mony.
[0005]

To compete With more traditional forms of heat to

electricity conversion thermoelectric generator devices must

be as e?icient as possible. A preferred means to achieve such

an.

[0012]

ments utiliZing individual casting of Wafer components.

[0013] Wire saWs have been used in the semiconductor
industry for some time. US. Pat. No. 6,283,111 to KaZunori
OniZaki, et al., uses a Wire saW to cut single silicon crystals

and cutting is done by pressing the ingots against the Wire.

US. Pat. No. 6,802,928 to Akira Nakashima utiliZes a jig to

improve cutting of silicon Wafers and cuts by pressing the

ingot against the Wires.
[0014] US. Pat. No. 6,617,504 to Takeshi Kajihara, et al.,
uses a mixture of bismuth telluride and antimony telluride as

a semiconductor but doped the mixture With a dopant of

p-type or dopant of n-type. The mixtures are made into small

globules for particular applications.

[0015] US. Pat. No. 6,313,392 to Yasunori Sato, et al.,
teaches the use of Bi1_5 SbO_5 Te3 to prepare p-type semicon
ductors for hot pressing and cold pressing.
[0016] US. Pat. No. 6,274,802 to Katsushi Fukuda, et al.,
uses the composition Bio_4 Sb [6 Te3 forp-type semiconductor
manufacture.
[0017] US. Pat. No. 4,855,810toAllan Gelb, et al., teaches
the use of a p-type semiconductor comprising 75 mole per

cent antimony telluride, 25 mole percent bismuth telluride

With 3 percent excess tellurium, and 0.1 percent lead.

high ef?ciency is to arrange the thermoelectric generator

SUMMARY OF THE INVENTION

elements in a circle With only a very small region used to

extract the energy produced by the thermoelectric generator

elements.
[0006] Patent PCT/US97/07922 to Schroeder discloses
such a circular arrangement. Art teaching in this case focused
on 3 means to extract energy for the high current in the ring of

elements; lia vibrating mechanical sWitch, 2ia Hall effect

generator and 3ia Colpits oscillator. Coatings of hot and
cold elements of the thermoelectric generator device are

claimed for selenium, tellurium and antimony among others

but not for mixtures of these elements.
[0007] US. Pat. No. 6,222,242 to Konishi, et al. discloses

Published US. patent application 2003/0217766 to

Schroeder, et al. entitled Torus Semiconductor Thermoelec

tric Device describes a circular array of semiconductor ele

[0018] It is a purpose if this invention to provide high con

version ef?ciency of heat energy to electrical energy by mak

ing use of anodically sliced, reduced barriers, n-doped and

p-doped semiconductors attached to metal heat-conducting
elements in a circular arrangement of thermoelectric genera
tor components.
[0019] It is a further purpose of this invention to operate
thermoelectric generator devices in high current loW resis

tance mode by increasing electrical conduction in n-doped

and p-doped semiconductors using reduced barriers process

ing.

semiconductor material of the formula AB2, X4 Where A is

[0020]

one of or a mixture of Pb, Sn, or Ge, B is one of or a mixture

ofBi and Sb and X is one ofor a mixture ofTe and Se. These

high e?iciency of transmission of energy contained in a ther

moelectric torus by an improved make-before-break sWitch

represent Pb, Sn or Ge doped bismuth telluride.

[0008] US. Pat. No. 6,274,802 to Fukuda, describes a sin

the ring-shaped thermoelectric generator device.

tering method of making semiconductor material Whose prin

ciple components include bismuth, tellurium selenium and

antimony.

It is a further purpose of this invention to provide a

ing control system utiliZing special physical connections to

[0021] Another purpose of this invention is to provide for
the use and storage of solar energy. Excess electrical output
energy is stored using resistance heating into a heat store

Apr. 19, 2012

US 2012/0090534 A1

allowing temperatures in the store to be greater than the

highest temperature that can be handled by the thermoelectric
generator device.

[0044] FIG. 19 illustrates a hybrid vehicle having both a

heat reservoir source and dedicated thermoelectric generator
device and in addition a second thermoelectric generator

[0022]

device that burns liquid fuel.

[0045] FIG. 20 illustrates an assembly of multiple thermo

It is a further purpose of this invention to provide a

novel method of slicing selenium-bismuth-telluride-based

and antimony-bismuth-telluride-based semiconductor
Wafers from boule castings.
[0023]

It is a further purpose of this invention to provide a

novel composition of bismuth doped diantimonytritelluride

suitable for use as a p-type semiconductor element.

[0024]

It is a further purpose of this invention to provide a

means to energiZe the control board and thereby replace the

need for a battery in the device.
[0025] It is a further purpose of this invention to improve
the ef?ciency of poWer conversion by splitting the ends of
cold ?ns and thereby increasing the surface area available for

cooling.

electric generator devices such as those depicted in FIGS. 12

and 13 organiZed for synchronous controlled output.

[0046] FIG. 21 illustrates a method to synchroniZe multiple
thermoelectric generator devices.
[0047] FIG. 22a illustrates a non-combustible plug con
taining igniter means and 22b illustrates a non-combustible
plug containing a temperature sensor.

[0048]

forms controlling the ring current shoWing a make-before

break format accomplished by inverting the electric output

BRIEF DESCRIPTION OF DRAWINGS

[0026] FIG. 1 illustrates a boule casting of reduced barriers

semiconductor.
[0027] FIG. 2 illustrates a damage-free electrical Wire-saW

ing ?xture that cuts by anodic corrosion.

[0028] FIG. 3 is an exploded vieW illustrating various ele

Waveform Wherein voltage spikes are removed.

[0050] FIG. 25 illustrates a printed circuit controller board

With designated functions.

[0051]

FIG. 5 illustrates a cold ?n modi?ed for improved

cooling.
[0031] FIG. 6 illustrates a standard coupon With a special
cold ?n and attached upconverter poWer takeoffs.
[0032] FIG. 7 illustrates hoW a standard coupon is con
nected to a modi?ed cold ?n With upconverter poWer takeoffs.
[0033] FIG. 8 illustrates hoW a modi?ed additional cold ?n
With upconverter poWer takeoff connects With insulation and

a standard coupon using a special cold ?n having upconverter

takeoffs.
[0034] FIG. 9 illustrates an assembled ring With upcon
verter poWer takeoff.

FIG. 26 illustrates athermoelectric generator device

modi?ed to operate With liquid or gaseous fuels and hot air

from solar heating that can also be operated as a solid state
chiller.

ments that are uni?ed in assembling a standard coupon.

[0029] FIG. 4 illustrates an assembled standard coupon.

[0030]

FIG. 23 illustrates the improved energy output of

square Waves derived from the H-bridge compared to a sine

Wave output of other systems.
[0049] FIG. 24 illustrates the nature of the output Wave

DISCLOSURE OF THE INVENTION

[0052] To illustrate this invention ?gures are draWn to shoW

components of some implementations of the invention. It
should be understood that these ?gures do not in any Way
limit this invention as describe in the claims.
[0053] The invention comprises a heat source, a plurality of
thermoelectric coupons arranged in a ring, a means for

extracting electrical energy from said ring. Energy is pro

duced in the form of very high currents circling through a
plurality of coupons. These currents are induced When metal
lic hot and cold ?ns of the thermoelectric coupons are respect
fully heated and cooled. The term coupon is used herein to

identify the combination of a hot ?n, a high purity n-type

semiconductor, a cold ?n, a high purity p-type semiconductor

[0035] FIG. 10 illustrates a bonded ring With upconverter

poWer takeoff, secondary coils and sWitch banks.

and a metal Wedge. Multiple coupons are assembled to make

[0036]

that Would otherWise occur if a resistive conductor like copper

Were used to electrically connect ends of a linear array of
coupons.
[0054] The heat source can be any of a myriad of combus

FIG. 11 illustrates the assembled ring With com

pleted upconverter and connecting cables.

[0037]

FIG. 12 illustrates a cross section of fuel-?red ther

moelectric generator device With atmospheric exhaust.

[0038]

FIG. 13 illustrates a cross section of a thermoelectric

generator device con?gured for the utiliZation of hot circu

lating air.
[0039] FIG. 14 illustrates a self-starting circuit that alloWs
electrical elements to derive poWer for operation as the ther

moelectric ring is initially heated.

[0040] FIGS. 1511, b and 0 illustrate a preferred system for
solar energy collection
[0041] FIG. 16 illustrates heat energy store and a preferred

system for solar energy collection, storage and re-utiliZation.

[0042]

FIG. 17 illustrates the use of a high ef?ciency ther

moelectric generator device to poWer an electric motor that

connects to the drive shaft of an automobile.
[0043] FIG. 18 illustrates the use of heat stored in ceramic
fragments to drive a conveyance using a thermoelectric gen

erator Wherein Wheel braking energy is conserved using resis

tance heating in the heat store.

a ring. The ring conformation is important in reducing losses

tible materials such as gases of hydrogen, methane, ethane,

propane, butane, liquids such as gasoline, kerosene or crude
oil, and solids such as Wood, used tires, straW and other
celluloid materials and coal. In addition the heat needed for
electricity production can come from concentrated sunlight.
A preferred heat source is heat energy stored from collected
solar radiation. Waste heat from these and other combustion
activities can also be stored and used as needed.

[0055]

For several means used to generate heat, the hot

gasses are passed over the hot ?ns to heat them. In a preferred

embodiment gas or liquid is combusted directly under the hot

?ns. In a preferred con?guration the hot ?ns project inWard
With regard to a circle or torus of coupons and the hot air is

passed through or combustion occurs adjacent to the hot ?ns.

[0056] In another preferred embodiment the rate of fuel
combustion is controlled to match the electrical demand of
the thermoelectric device. In the case of gas or liquid being
combusted near the hot ?ns, infrared radiation Which passes

Apr. 19, 2012

US 2012/0090534 A1

through or is given off from the hot ?ns is radiated back on the
hot ?ns by a re?ective metallic dome.
[0057] In another preferred embodiment a temperature sen

[0062] This upconverter assembly provides tWo current

loops in opposite directions around secondary coils and a
high frequency E-core. The current How is determined by the

sor on a cold ?n is used to sense temperature above 100

degrees C. and cause an open circuit in a fail-closed valve

condition of each sWitch bank.

[0063] The poWer takeoff upconverter is controlled by a

supplying fuel to the thermoelectric generator device in the

event of a cooling bloWer failure or loW cooling air velocity

circuit board With a pulse Width modulator chip driving mul

tiple inverted MOSfet drivers. The inverted MOSfet drivers

across cold ?ns.

create a make-before-break mode for current direction

[0058]

through poWer takeoff loops. Without inversion sharp spikes

In another preferred embodiment a temperature sen

are produce during the reversal in the secondary because

sor on a cold ?n is used to sense temperature above 100

degrees C. and cause an open circuit in a bloWer motor sup

current is interrupted in the ring. By inverting the drives,

plying hot air to the thermoelectric generator device in the

event of a cooling bloWer failure or loW cooling velocity

pulses occur. The number of sWitch chips employed in paral

across cold ?ns.

lel is determined by the maximum amount of current gener

[0059]

ated in the ring and depends on the capacity of the MOSfet

sWitches. For example in a 5-kW thermoelectric generator

In another preferred embodiment a re?ective dome

has backing of an insulating layer. An opening is made in the

top dome to alloW hot air to escape or a tube is attached to

direct the escaping air.

[0060]

A unique method is used to extract energy from the

current in the ring continues to How and no electromagnetic

device ten MOSfet sWitches in each sWitch bank safely com

mutate about 2000 amps.

[0064]

In addition to the secondary coils that output poWer

high current ?oWing in the thermoelectric ring Without inter

from the ring four additional secondary Windings supply iso

rupting current ?oW or the direction of current. An integrated

metallic takeoff apparatus is inserted betWeen any tWo cou
pons. In a preferred embodiment the takeoff apparatus is
made of tWo takeoffs each having tWo connections to metal
laminates that form connections to tWo sets of MOSfet sWitch
banks. The ?rst takeoff is made of a special straight cold ?n
that has been high-temperature-braZed to 2 sets of multiple

eliminating the need for a battery to do this task. This com

thin insulated metallic strips each sets of strips forming a

laminate. One of the laminates is tWisted 180 degrees relative
to the other. Both laminates extend out from the ring and are

Wrapped in circular fashion about secondary coils and an

E-core. To accommodate the MOSfet sWitch banks the end of
the takeoffs are folded in the direction aWay from the ring.
These folded sections of the straight and tWisted laminates are

lated poWer for components of a controller circuit board.

[0065] In a preferred embodiment poWer to the controller

circuit board at startup is provided by a special component,

ponent is poWered With current from the ring such that When
the ring reaches 0.6 volts it provides 12 volt, 100 milliamps
output to operate the controller circuit board. The component
connects to each side of one of the upconverter sWitch banks.

The output current to the special component declines When

MOSfet sWitch banks become active and voltage drops to
Zero. A diode bridge of the component prevents poWer from
entering the special component after the controller board

becomes poWered by secondary poWer from the E-core

upconverter.

sWitches. On the opposite side of the MOSfet sWitch banks

[0066] A pulse-Width modulator chip is used to control the

MOSfet sWitches. If a simple oscillating circuit is used opti

are soldered a second complementary set of laminates formed

in a manner to extend back to the ring forming a closed current

mum poWer is not obtained. If the drive of the pulse-Width

modulator is not overlapping very high spikes of current are

loop. The preferred connection from the complementary

induced in the primary and secondary Windings of the upcon

verter. Such spikes Would adversely affect electric devices
that use the secondary voltage outputs.
[0067] Secondary Windings in the E-core of the upcon
verter transformer produce AC output voltages at higher fre
quency than useful. The number of Windings needed depend
on the voltage driving the ring and the coupling ef?ciency of
extracting that energy. This number of Windings can be deter
mined by those skilled in the electronic arts. For example a
ring With 60 coupons can produce 3 volts in the primary to
drive 2000 amps and using a 1:40 Winding ratio a secondary
voltage of approximately 120 volts AC is obtained.
[0068] Achieving the proper alternating current energy out

individually soldered to one of tWo banks of MOSfet

laminates utiliZes a high temperature soldered modi?ed cold

?n. This modi?ed ?n is soldered to a coupon from Which the
original cold ?n Was removed. As With the takeoffs from said
straight cold ?n said modi?ed cold ?n connects to tWo sets of

multiple thin insulated metallic strips forming a laminate.

One of the tWo laminates is tWisted 180 degrees relative to the
other. The ?rst set of laminates attached to the straight cold ?n
and the second set of laminates attached to the modi?ed cold
?n are arranged to complement one another in such a manner

that When connected to the MOSfet sWitch banks the 180

degree tWisted takeoffs form one closed loop and the straight
takeoffs form another.
[0061] In a preferred embodiment a shortened cold ?n is
placed 180 degrees from the additional cold ?n to maintain
physical symmetry. In this case the upconverter connects to

the ring through only cold ?ns thereby reducing the amount of
heat entering the upconverter. Insulating material is placed
betWeen the tWo cold ?ns of the poWer takeoff as Well as strips

forming the laminate and the current loops that conduct cur

rent around the upconverter. This insulating material is pref

erably a thin layer of mica. In addition the insulating material
can be a thin layer of room-temperature vulcaniZing rubber
coated With Zirconium or other ceramic beads. Other kinds of
insulating non-ceramic beads of same particle siZe can also be
used.

of a circle of thermoelectric coupons requires additional spe

cial conversion components. Important components involved

in the extraction of electrical energy are recti?er bridges to

convert high frequency sWitching DC output into DC and an

H-bridge that converts recti?ed secondary voltage to the
proper 50/60 Hertz alternating current. The Waveform pro
duced from the H-bridge is controlled by inputs from a pulse
Width modulator.
[0069] This thermoelectric generator device is very quiet

When running thus providing an opportunity to replace noisy

gasoline driven implements and appliances.

[0070] To provide these bene?ts details are given for mak
ing and using a simple circular collection of coupons. Each

Apr. 19, 2012

US 2012/0090534 A1

coupon is made by alternating a cold ?n, that is, a metal ?n to

be cooled, a reduced barriers n-type semiconductor, then a hot
?n, that is heated, then a p-type reduced barriers semiconduc

tor folloWed by a metallic Wedge component. The Wedge

alloWs for the hot ?ns and cold ?ns to be rectangular and still
be formed into a ring. The Wedge also protects the p-type
semiconductor in assembly after soldering of the coupons.
Use of the Wedge alloWs coupon connections to all be metal to

metal in the assembly of the ring. An alternative procedure is

to make cold ?ns tapered or hot ?ns tapered or both cold and

hot ?ns tapered in the region of contact With the semiconduc

tor Wafers.

[0071]

For clarity of the disclosure and de?nition of the

claims the folloWing terms are de?ned:

[0072]

Semiconductor means: a mixture of one or more

elements that has the property of alloWing either electrons or

holes to move through the mixture depending on Whether the

voltage is greater than 50 millivolts at a 200-degree centi

grade temperature differential. Another property of a reduced
barriers boule is calculated resistance equal to or less than

0.000006 Ohms determined by measuring voltage along 2

inches of the boule When a 1 amp current is passed along the

long axis of the boule.

[0085] Phosphorous nickel means: An electroless plating
product that contains from 1% to 10% of phosphorous com
bined With nickel.
[0086] Distinct ori?ce means: an opening in an enclosure
that alloWs air, gaseous fuel or atomiZed fuel to pass, exhaust
to exit and recycled air or ?uid to exit the device. It can be just
an opening in a ?at or rounded structure or it may be a duct
attached to said ?at or rounded structure.

[0087] Alternate ?n de?nition: a ?n to be cooled is the

alternate of a ?n to be heated and conversely.

[0088]

Alternate semiconductor de?nition: p-type and

mixture has an excess n-type or p-type doping. The semicon

ductor nature of thermoelectric Wafers is Well established in
the electronic literature.

pon assembly.

[0073] Pin means: an elongated metal slab optionally

straight, tapered, or split on one end, the other end being

denote an enclosure that can be used to maintain components

soldered to an n-type semiconductor and on the other side to

a p-type semiconductor and on either side soldered to a con

ductive Wedge.

n-type semiconductors are alternates of one another in cou

[0089]

Box de?nition: The term box is used herein to

of the invention in a ?xed physical relationship. While a box

is not necessary for the invention to be practiced it is a prac
tical feature of the invention. As an example in a preferred
embodiment the box is made of tWo serving pans com

[0074]
[0075]

Cold ?n means: a ?n to be cooled.

Hot ?n means: a ?n to be heated.

[0076]

Coupon means: a repeating component of the

[0090] Anodic slicing means: A process of cutting semi

conductor matter using only electrolytic dissolution to

thermoelectric generator device made up of at least one

remove that portion of the matter required to produce a slice

n-type semiconductor, one hot ?n, one p-type semiconductor,

and one cold ?n. In the device having a Wedge component

of the bulk matter.

With each set of ?ns and semiconductors a coupon includes

the Wedge component. A coupon that does not use a Wedge

component has the hot ?n, the cold ?n or both tapered in the
region that is adjacent to the n-type or p-type semiconductor.
[0077] Kesters solder means: Lead-free solder paste
consisting of 96.5% tin and 3.5% silver.

the invention, ?gures are provided to illustrate a Working

version. Examples are intended to illustrate the basic prin
ciples and elements of the device. Examples are given for a
variety of applications but by no means represent the broad
applications of this invention.
[0092] FIG. 1 illustrates reduced barriers casting set 1 and

[0078]

the product 2, a boule made by this novel crystal groWing

Wafer means: an n-type or p-type semiconductor

made in the shape of thin slab Where the thickness of the

shortest dimension is from 5% to 20% of the either of the
other dimensions. An example is a 40 mil thick piece of
semiconductor material 0.75 inches by 0.75 inches that is
used to create the Seebeck voltage of the coupons.
[0079] Wafer side means: the surface area denoted by the
larger dimension of a Wafer Where When placed in the coupon
the Wafer side becomes the current carrying side.
[0080] Wafer edge means: the surface area denoted by

monly used in a buffet With one inverted over the other.

[0091]

Before describing hoW to produce components of

procedure. The procedure applies to n-type and p-type doped

selenium-bismuth-telluride-based and antimony-bismuth
telluride-based semiconductor materials. The groWth of
reduced barriers semiconductor is achieved by using a cru
cible 3 to pour combined melted high purity elements 4 into a

rectangular mold 5. The mold is prepared by compressing an

inert casting matrix 7 around the replica 6, a pilot, of the boule
to be cast. The casting matrix 7 is made by adding 5% to 20%

by Weight of loW-dropping-point kiln grease to small, spheri

the smallest dimension of a Wafer. Before a Wafer is placed in

the coupon the Wafer edges are coated With insulator to reduce

cal, holloW ?y ash ceramic beads that ?oat on Water. After

compressing the casting matrix in a holding frameWork 8 a

current leakage.
[0081] Upconverter means: a high frequency transformer
controlled by MOSfet sWitch banks having tWo single turn
loops, one of Which has current ?oWing opposite to the other,
an E-core to facilitate high frequency transformer e?iciency
and multiple secondary Windings having a number of turns

reduced barriers seed crystal 9 having dimensions in the range

corresponding to the designed output voltages.

[0082]

High purity means: purity of 99.9% or greater for

the components to be combined.

[0083]

Boule means: a mass of semiconductor that is

caused to groW With reduced barriers during casting.

[0084] Reduced barriers means: a semiconductor prod
uct shoWing the property of a single face after a sharp break of
a semiconductor Wafer and characteristic loW resistance in the
boule of semiconductor material. In the boule form a Seebeck

of0.5-2 mm by 4-10 mm by 10-20 mm is inserted at the top

of the holding frameWork 8 adjacent to the pilot 6. The thin

face of the seed crystal is placed adjacent to the pilot in a
corner. The pilot is then lightly shaken and tWisted and then
vertically extracted Without disturbing the mold. The surface
of the reduced barriers seed crystal 9 shoWs a single face and
serves as the nucleation site for reduced barriers groWth of the

boule product. Melted semiconductor material 4 is then

poured into the mold and alloWed to sloW-cool for 15 minutes.
The cooling rate of the material is about one-hundred degrees
(100) per minute. This cooling rate results in reduced barri
ers groWth from top corner of the mold to the bottom. The
seed crystal 9 remains attached to the boule product 2 as

expected for groWth of a reduced barriers from seed. The

Apr. 19, 2012

US 2012/0090534 A1

reduced barriers nature of the boule product 2 is indicated by

the absence of grain boundaries on the surfaces of the boule
product 2 after it is removed from the mold 5.
[0093] The reduced barriers nature of the boule product 2 is

further supported by the electrical characteristics of the boule

(90) to the hot ?ns 29. Furthermore it is possible to shape

either the hot ?ns 29 and/or the cold ?ns 21 to eliminate the

Wedge 31.
[0097] Energy conversion in the thermoelectric generator

uct 2 and is determined by measuring the voltage across a

device is proportional to the temperature difference betWeen

adjacent hot ?ns and cold ?ns. As seen in FIG. 5, slitting the
bottom and offsetting three of six sections produces a modi
?ed cold ?n 21. Three pin ?ns 22 are not displace While three
pin ?ns 23 are displace aWay from Wafer contact surface 24.
The Wafer contact surface 24 is undisturbed alloWing good
contact With the Wafers. A resulting bene?t is to increase the
surface area for cooling by a factor of 2. Improved e?iciency

2-inch separation along the boule product 2 When 1 amp DC

is passed along the axis of the boule 2. The resistance calcu

of cooling is especially important because the highest

reported melting point for dibismuthtritelluride is 5850 C.

2 that are determined by hot point probe measurements on the

surface to determine Seebeck voltage and semiconductor

type. Seebeck voltage is characteristically betWeen 52-72

millivolts at a 200-degree centigrade temperature differential.
The reduced barriers nature of the semiconductor is further

supported by the resistance of ?nal shaped crystal boule prod

lated from voltage measurement across a 2 inch separation on

This temperature is near the combustion temperature of pro

the boule product 2 is less than 0.0003 Ohms. The resistance

of each 40-mil Wafer is calculated With the above data to be
less than 0.000006 Ohms per Wafer.
[0094] Production of uniform Wafers is obtained using a

pane and other common fuels.

Wafer cutting assembly 10 shoWn in FIG. 2. The boule prod

uct 2 or a portion of it is mounted to a motor-driven slide 11

With a tilt of the upper portion toWard cathode cutting Wires

12. Cutting Wires 12 form a single continuous line. Cutting
Wires 12 are separated by about 45 mils and held in alignment
by threads of carriage bolts 13. The cutting Wires 12 are made
of brass of about 10 mils diameter. In a preferred embodiment
50-60 portions of Wires make up a cutting head 14. The
cutting Wires 12 are connected to the cathode of a poWer

supply 15 and the anode is connected to the bottom of the

boule product. When the poWer supply is turned on it pro
duces anodic corrosion as the boule moves sloWly through the
cutting Wires 12 While 3-5 amps traverse through the boule
product 2 to the cutting Wires 12. The boule product 2 is
moved by force from a motor 16 draWing a pull Wire 17 from
capstan 18 betWeen guides 19. The boule product 2 and cut
ting Wires 12 set are immersed in deioniZed Water contained

in vessel 20 during the anodic corrosion process. Cutting

speed is about 1 hour for a boule product 2 having a 3A inch
cross-section. Evolution of gas bubbles aids in removing dis
solved material from the boule product.
[0095]

[0098] FIG. 6 displays a modi?ed coupon 32 With poWer

takeoffs using a special cold ?n 25 braZed to straight poWer
takeoff 26 and tWisted poWer takeoff 27. Special ?n 25 is
soldered to a coupon from Which the original cold ?n and its
adjacent n-type semiconductor Wafer 28 had been removed.
The added cold ?n With takeoffs and adjacent neW n-type
semiconductor Wafer 28 is soldered to the hot ?n 29. Hot ?n
29 has next to it a p-type semiconductor Wafer 30 and Wedge
31. PoWer takeoffs 26 and 27 form a complementary set
designed to physically mate to another modi?ed coupon With
takeoffs that match up to the regions of contact to MOSfet
sWitch banks.
[0099] FIG. 7 shoWs an additional cold ?n 35 With poWer
takeoff laminates 36 and 37 arranged to be connected to a
standard coupon 34. PoWer takeoff 33 is made up of an
additional cold ?n 35 to Which is braZed a straight poWer
takeoff laminate 36 together With a tWisted poWer takeoff
laminate 37. The ?at additional cold ?n 35 alloWs a tight

junction With Wedge 31 of standard coupon 34. During

assembly the additional cold ?n 35 With attached braZed
laminate straight takeoff 36 and tWisted laminated takeoff 37
is added to the ring adjacent to a standard coupon 34.
[0100] FIG. 8 shoWs the combined poWer takeoff 38. It is
assembled by nesting poWer takeoffs 27 and 37. In the

FIG. 3 illustrates a cold ?n 21, a hot ?n 29, an n-type

assembled form it can be seen that the combined takeoffs

crystalline semiconductor Wafer 28 and a p-type crystalline

produce tWo single turn current loops one above the other.
When current is ?oWing in the ring and MOSfet sWitch banks
are closed, current in the loop of the tWisted takeoff 27-37
?oWs in an opposite direction to that of the straight poWer
takeoff 26-36. An opening exists at the end of current loops

semiconductor Wafer 30 together With a Wedge 31 that com

bine to form a standard coupon 34. FIG. 3 illustrates an

exploded vieW of the elements of the standard coupon 34 and

the relative position those elements occupy When they are
assembled as a complete standard coupon 34. N-type crystal
line semiconductor Wafer 28 is juxtaposed With cold ?n 21,
Which has a layer of solder paste in the region Where the
n-type semiconductor Wafer 28 bonds to cold ?n 21. Hot ?n
29 has layers of solder paste in the regions that bond to n-type
semiconductor Wafer 28 and p-type semiconductor Wafer 30.
P-type semiconductor Wafer 30 bonds With solderpaste to one
side of the Wedge 31.
[0096] FIG. 4 illustrates the ?nal positions of the elements

27-37 and 26-36 to Which the MOSfet sWitch banks are solder

connected. Assembly is made easier by offsetting the attach

ment site of MOSfet sWitch banks and aligning the attach
ment site of the MOSfet sWitch banks in a direction aWay

the operating voltage desired. The Seebeck voltage also

effects voltage production for a given temperature differential

from the thermoelectric ring of standard coupons 34. Insula

tion 39 is used to electrically isolate the additional cold ?n 35
from modi?ed coupon 32 shoWn in FIG. 6. Electrical insula
tion is also placed betWeen laminate takeoffs 26-36 and 27-37
as Well as betWeen strips of the laminate. Each strip of the
laminate is insulated except at the ends Where they are all
braZed in one instance to the cold ?n and in another instance
to the MOSfet sWitch bank. In a preferred embodiment strips
of the laminate are braZed together at the non-insulated ends
prior to being braZed to a cold ?n and prior to being soldered
to the MOSfet sWitch bank. This insulating material is pref

betWeen hot ?ns 29 and cold ?ns 21. It should be understood

that the cold ?ns 21 need not be oriented at ninety degrees

rial can be a thin layer of room-temperature vulcaniZing rub

of the standard coupon 34 seen in FIGS. 9, 10 and 11. A

completed thermoelectric ring preferably includes sixty-tWo

(62) standard coupons 34. The number of standard coupons
34 included in a thermoelectric ring can vary depending on

erably a thin layer of mica. Alternatively, the insulating mate

Apr. 19, 2012

US 2012/0090534 A1

ber coated With small Zirconium or other ceramic beads.

Other kinds of beads of same particle siZe can also be used.

[0101] An example of a thermoelectric ring 40 prior to

soldering is shoWn in FIG. 9. It is composed of n-type semi
conductor Wafers 28, hot ?ns 29, p-type semiconductor
Wafers 30 and Wedges 31, and cold ?ns 21. The cold ?ns 21
depicted in FIG. 9 are the un-modi?ed cold ?ns depicted in
FIGS. 3 and 4. Also shoWn are the poWer takeoffs of the
current loops to be connected to sWitch banks. Also shoWn in
FIG. 9 are, straight laminates 26 and 36 and the tWisted
laminates 27 and 37. In a preferred embodiment to physically
balance the thermoelectric ring assembly, a shortened cold ?n
41 is inserted in to the thermoelectric ring 180 degrees across
from the additional cold ?n 35.

motor are so arranged in said box as to alloW said output of the

bloWer to cool cold ?ns Wherein the amount of air pressure

from the bloWer is at least 30% of the pressure produced by

the bloWer. Legs 64 beloW the case 59 hold the case off the

ground. Fuel duct 65, a distinct ori?ce, and fuel venturi noZZle
66 provide fuel to the loWer combustion boWl 67. Fuel is
combusted just beloW the hot ?ns due to stimulated catalytic
effect of a burner screen 68. Preferably the screen is made of
perforated ceramic but a metal screen can be used as Well.

Ef?cient ignition of fuel is provided by non-combustible plug

69 using a resistance-heated igniter 70 or spark igniter 71.
Ignition plug 69 is positioned at the center of the ring 40 so as
to force combustion gas over the hot ?ns 29. Combusted gas

exits through an exhaust port distinctive ori?ce 72 in the

insulated upper burner boWl 73. Insulation is shaded. This

[0102] FIG. 10 illustrates the bonded thermoelectric ring

42 made up of thermoelectric ring 40 plus a polyimide insu
lated metal strap 43 held in compression by 2 diesel spring

version of the semiconductor device can also be use to burn

tensioned clamps 44. Also shoWn is a poWer takeoff upcon

verter 45 With secondary coils 46, E-core 47 and MOSfet

an atomiZing ?xture such as a fuel injector. In a preferred

embodiment the insulated upper burner boWl is a double boWl
With insulation in betWeen each boWl.

sWitch banks 48 and 49. Controller printed circuit board 50,

not shoWn in FIG. 10, controls MOSfet sWitch bank 48 sol
der-attached to straight laminate strap 26 and 36 and MOSfet
sWitch bank 49 solder-attached to tWisted laminate 27 and 37.

[0103]

FIG. 11 illustrates hoW the single turn loops 26-36

and 27-37 are used to sWitch current direction around the

E-core 47 With make-before-break sWitch banks 48 and 49,

and to thereby convert DC high current in the bonded ther
moelectric ring 42 into a high frequency AC output to leads at

liquid fuels by replacing the venturi gas inlet noZZle 66 With

[01 05]

In a preferred embodiment non-combustible plug 69

is made of ceramic material and shaped so as to alloW the

center portion of the resistance-heated igniter 70 to occupy

the open center of the ring and side portion to rest upon the
end of the hot ?ns 29 thereby forcing hot air and combusted
gases through the hot ?ns. Resistance heater 70 can be

replaced by a spark igniter 71.

[01 06]

In another preferred embodiment a temperature sen

sor is added to the plug 69. The temperature sensor controls a

fuel valve to cut off fuel in the event that the temperature

51, 52, 53 and 54. The high frequency AC is converted back to

DC voltage by bridge recti?ers on controller printed circuit
board 50. The output voltage is 40 times higher than voltage
produced by the bonded thermoelectric ring 42 at the sWitch
banks 48 and 49 using upconverter transformer 45 compris
ing the single turn loops 26-36 and 27-37, a pair of bi-?lar
40-turn secondary coils 46 magnetically coupled through an

exceeds a pre-set value. This value is set beloW the melting

point of the n-type or p-type semiconductor material.
[0107] In another preferred embodiment cold ?ns are

E-core 47 and bridge recti?ers on controller board 50. Sec

With controls to prevent over?oW. The height of the Walls of

the U- shaped tray and the Width of the tray are adjusted With

ondary poWer for the printed circuit controller board is deliv

ered by ribbon cable DIP plug 55. This cable delivers 18 volt
AC for 4 or more independent poWer supplies each converted
to DC using a bridge recti?er on the controller board 50 of
FIG. 12. PoWer to the auto-start circuit not shoWn in FIG. 11
is delivered by a tWisted pair of Wires 56 connected across
terminals of one of the MOSfet sWitch banks 48 or 49. TWo
ribbon cables shoWn in FIG. 11 lead from upconverter 45 to
controller board 50 of FIG. 12. One cable connects sWitch
banks 48-49 to the printed circuit controller board 50 With
ribbon cable DIP plug 57. The other ribbon cable delivers
poWer through DIP plug 55 to a controller board from four, 5

turn secondary Windings contained in secondary Winding 46

around the center stem of E-core 47.

[0104]

FIG. 12 illustrates a gas burning thermoelectric gen

erator device 58 With a case 59, bloWer 60 and motor 61. The

ring 40, shoWn in cross-section as a vertical cold ?n and

horizontal hot ?n, is mounted Within the case supported by an
insulator 62 beloW the cold ?ns 21. PoWer takeoff laminates
26-27 conduct current to the upconverter 45. The control

operations are made using the components of the printed

circuit controller board 50. Controller board 50 drives MOS

fet sWitch banks 48 and 49. Cold air being push by bloWer 60
cools the controller board 50, and in addition cold ?ns 21 and
exits the distinct ori?ce 63. The bloWer 60 is siZed and the
controller board 50 is arranged With respect to bloWer 60 so as

to alloW and least 10% of the air pressure produced by the

bloWer to impinge on controller board 50. The bloWer and its

placed in a non-metallic U-shaped ring-shaped tray. The tray

is ?lled With Water preferably by an automated ?lling system
regard to the air How of bloWer 60 so as to optimiZe overall

cooling e?iciency. Electrical energy production is improved

by the evaporative cooling effect on the cold ?ns as air from
bloWer 60 passes over Water in the U-shaped tray to exit
distinctive ori?ce 63.

[0108]

In another preferred embodiment the U-shaped tray

is ?tted on the inside Wall With a plurality of spray noZZles

facing the cold ?ns. Water is pumped from the tray through
the noZZles and the height of the outside Wall of the ring is set
With respect to the location of the noZZles so as to have the
outside Wall catch excess directed spray. In a preferred

embodiment the height of Water in the tray is controlled

electronically or by a ?oat mechanism.
[0109] A versatile con?guration of the thermoelectric gen
erator device 74 is shoWn in FIG. 13 This version alloWs the
use of externally supplied hot air. This hot air can be derived
from externally combusted sources, direct solar derived heat

or solar energy stored in hot solids, preferably porcelain frag

ments. Hot air from porcelain fragments in heat storage, not
shoWn, enters the loWer combustion boWl 67 through distinct
ori?ce insulated pipe 65. Hot air passes hot ?ns 29 and exits
through insulated upper boWl 75 then through insulated
exhaust pipe distinct ori?ce 76. Plug 69 is con?gured as a
temperature sensor With temperature sensor 77 With sensor

output lines 78. The plug forces air around hot ?ns 29. Dis
tinct ori?ce 63 alloWs cooling air driven by bloWer 60 to exit.
Features bloWer 60, motor 61, poWer takeoff laminates 26 and