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Homework 2 Spring 2012

This document provides instructions for several homework problems related to MEMS design and analysis: 1. Layout and simulate a comb drive resonator in MEMS Pro using the PolyMUMPs process. 2. Calculate the resonant frequency of the comb drive resonator. 3. Determine the maximum length of a silicon rod that will not fracture under its own weight. 4. Model and analyze the deflection of a MEMS Fabry-Perot interferometer mirror suspended by cantilever beams. 5. Calculate the voltage required to deflect the mirror to a specified displacement.

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0% found this document useful (0 votes)
122 views5 pages

Homework 2 Spring 2012

This document provides instructions for several homework problems related to MEMS design and analysis: 1. Layout and simulate a comb drive resonator in MEMS Pro using the PolyMUMPs process. 2. Calculate the resonant frequency of the comb drive resonator. 3. Determine the maximum length of a silicon rod that will not fracture under its own weight. 4. Model and analyze the deflection of a MEMS Fabry-Perot interferometer mirror suspended by cantilever beams. 5. Calculate the voltage required to deflect the mirror to a specified displacement.

Uploaded by

Muhammad Hanif
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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EE215 Spring 2012 Homework 2

1) Layout a comb drive resonator in the PolyMUMPS process using L-Edit in MEMS Pro as
shown in the figure below. Use the poly 1 layer (h = 2 m) for fabrication of the comb
drives and folded springs. You can construct the resonator using elements from the
MEMS Pro cell library. The length of the folded springs will be L = 150 m, the width
of the beams will be W = 2 m wide and they will be separated by 18 m. The comb
drive fingers will be 40 m long and 3 m wide, with a 3 m gap between the fingers.
The fixed and released fingers should have an un-deflected overlap of 20 m. You
should not need to use poly 2 in your layout except for the bond pads. Be sure to use
bond pads from the MEMS Pro cell library! Save the final layout file as YourName_Resonator.tdb and mail it to the instructor. Make a solid model of your resonator.
Experiment with the scaling in the z-direction to make the solid model easier to visualize.
3 m lines and spaces

Resonator

2 m
18 m
150 m

40 m

20 m

Figure 2.20. Comb drive resonator.


2) Calculate the resonant frequency for the comb drive resonator in problem 1 above.
a. First find the effective spring constant ksys for the 2 folded springs where each folded
spring is made up of four beams of length L (i.e. L = 150 m in the layout in problem
1). Assume the trusses joining the folded spring segments are rigid, that Youngs
modulus for polysilicon is E = 160 GPa and that the density of polysilicon is = 2330
kg/m3. Hint: A folded spring can be broken down into fixed-guided springs that are
connected in parallel and series. Springs that are connected in parallel have an
effective spring constant that is the sum of the individual spring constants
ktotal=k1+k2, like capacitors that are connected in parallel where Ctotal=C1+C2.

EE215 Spring 2012 Homework 2


Springs that are connected in series have an effective spring constant given by
1/ktotal=1/k1+1/k2, like capacitors that are connected in series where
1/Ctotal=1/C1+1/C2. The spring constant for a single fixed-guided beam is given by:

k fixed guided = 12 EI

( L)

= Eh W

where

( )

I = 1 hW 3
12

b. Use the effective spring constant ksys found above to estimate the resonant frequency
of the comb drive resonator using the following formula:

1
fr =
2

k sys

M p + 0.3714M

1/ 2

Where MP and M are the masses of the shuttle plate and of the supporting beams,
respectively. This approximate expression is found using the Rayleigh Ritz energy
method.
3) Assume that silicon will fracture when the axial stress reaches 1 GPa. Find the
maximum length of a vertical silicon rod which, under the action of its own gravitational
load, will not exceed this fracture stress. Assume the density of silicon is = 2331 kg/m3
and that the acceleration due to gravity is g = 9.8 m/sec2. Are you surprised?
4) Model a released mirror for a MEMS Fabry-Perot interferometer in the SOI-MUMPS
process as a stiff plate (2mm x 2mm) fabricated in the device layer of the 10 m thick
SOI wafer suspended by four diagonal fixed-guided cantilever beams (h = 10m thick, W
= 100 m wide, L long) at each corner of the mirror as shown in the figure below. Find
an expression for the deflection of the mirror as a function of the support arm length L
assuming a force F is acting vertically on the mirror. What is the longest length L for the
support arms that you can fit into the allowed 8mm x 8mm die site including the central
2mm x 2mm mirror? You can assume Youngs modulus for silicon is E = 169 GPa
parallel to the wafer flat for a (100) wafer, 130 GPa at 45 degrees to the wafer flat and
that Poissons ratio is = 0.28.

5) Calculate the voltage that will be required to deflect the mirror for the Fabry-Perot
interferometer you designed in problem 4 using an electrostatic actuator. You can assume
that the area of the parallel plate capacitor is the same as the 2 mm x 2mm mirror surface.

EE215 Spring 2012 Homework 2


Assume the initial gap from a second bonded wafer with a counter-electrode is 2.4 m
and that you need to be able to deflect the mirror surface until the final gap is 2/3 of the
initial value, or 1.6 m.
6) Two M-Test structuresi are shown in the figure below. These test structures are useful
for characterizing the mechanical properties of thin films such as Youngs modulus,
Poissons ratio and residual stress. They are also very common elements in MEMS
design. In this problem we will determine the pull-in voltage of the cantilever and
fixed-fixed beams analytically.

Figure 3.9. M-Test structures. Cantilever Beam (top), Fixed-Fixed Beam (bottom).
a. Layout each of these structures in L-Edit. Define the released structure (cantilever
beam or fixed-fixed beam, both 500 m long and 100 m wide) in Poly1. Instead of
the dielectric spacer, as shown in the figure above, use a polysilicon anchor to nitride.
Make the ground plane in Poly0. You can start the ground plane after the nitride
anchor. Use Oxide1 to define a 2 m gap between the released structure and the
Poly0 ground plane.
b. Make a solid model of each of these structures using MEMS Pro. Draw
representative cross-sections through your structures.
c. Calculate the pull-in voltage for each of these structures analytically for the following
dimensions:
Cantilever beam (CB):

Length
300 m
400 m
500 m

Width
100 m
100 m
100 m

EE215 Spring 2012 Homework 2


Fixed-fixed beam (FB): Same as above
Assume the following materials properties:

Youngs Modulus E = 160 GPa


Poissons ratio = 0.2
Transverse stress gradient = 0
Oxide1 thickness = 2 m
Poly1 thickness = 2 m

You may also assume that each of these structures can be approximated as an ideal
parallel plate actuator, and that there is a uniform electrostatic load on each of them. You
can also ignore the length of the beam taken up by the anchors in your calculations, and
any fringing effects of the fields. The displacements would then be given by:
Cantilever beam:

y ( x) =

(6l
24 EI
2

4lx + x 2

Fixed-fixed beam:

y ( x) =

x 2
24 EI

(l x )2

Where the moment of inertia I is given by:

I=

wt 3
12

Figure 3.10. Cantilever beam under uniform load = F/L [N/m] (top), Fixed-fixed beam
(bottom).

EE215 Spring 2012 Homework 2


To calculate the pull-in voltages, first determine an effective spring constant km for each
of the structures. Note that the maximum displacement for the cantilever beam occurs at
x = L and that the maximum displacement of the fixed-fixed beam occurs at x = L/2.
Then calculate their initial capacitance C0. The pull-in voltage can then be found from
equation 4.18 in Liu2:

Vp =

2 x0
3

km
1.5C 0

7) Choose an article to review on optical MEMS for Thursday 5/3. It may be helpful for
your design project to review some of the articles on MEMS deformable mirrors from
Tom Bifanos group.3
i

P.M. Osterberg and S.D. Senturia, M-Test: A Test Chip for MEMS Material Property Measurement Using
Electrostatically Actuated Test Structures, J. Microelectromechanical Systems, Vol. 5, No. 2, pp. 107-118 (1997).
2
Chang Liu, Foundations of MEMS, Pearson Prentice Hall, p. 113 (2006).
3
http://people.bu.edu/bifano/Publications.html

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