J304/305

Vishay Siliconix

N-Channel JFETs

PRODUCT SUMMARY
Part Number

VGS(off) (V)

V(BR)GSS Min (V)

gfs Min (mS)

IDSS Min (mA)

J304

2 to 6

30

4.5

J305

0.5 to 3

30

FEATURES

BENEFITS

D Excellent High Frequency Gain: J304,

Gps 11 dB (typ) @ 400 MHz
D Very Low Noise: 3.8 dB (typ) @
400 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: AV = 60 @ 100 mA

D
D
D
D
D

APPLICATIONS

Wideband High Gain

Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification

D
D
D
D

High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches

DESCRIPTION
The J304/305 n-channel JFETs provide high-performance
amplification, especially at high-frequency. These products
are available in tape and reel for automated assembly (see
Package Information).

For similar products in TO-236 (SOT-23) packages, see the

2N/SST5484 series data sheet, or in TO-206AF (TO-72)
packages, see the 2N/SST4416 series data sheet.

TO-226AA
(TO-92)

Top View

ABSOLUTE MAXIMUM RATINGS

Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V

Lead Temperature (1/16 from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C

Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA

Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C

Document Number: 70236

S-50077Rev. E, 24-Jan-05

Notes
a. Derate 2.8 mW/_C above 25_C

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J304/305
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J304

Parameter

Symbol

Test Conditions

Typa

Min

V(BR)GSS

IG = 1 mA , VDS = 0 V

35

30

VGS(off)

VDS = 15 V, ID = 1 nA

J305

Max

Min

Max

Unit

Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain

Currentb

Gate Reverse Current

Gate Operating

Currentb

IDSS

VDS = 15 V, VGS = 0 V

VGS = 20 V, VDS = 0 V

IGSS

TA = 100_C

30
6

0.5

15

100

mA

100

pA

0.2

nA

IG

VDG = 10 V, ID = 1 mA

20

ID(off)

VDS = 10 V, VGS = 6 V

Drain-Source On-Resistance

rDS(on)

VGS = 0 V, ID = 300 mA

200

Gate-Source Forward Voltage

VGS(F)

IG = 1 mA , VDS = 0 V

0.7

Drain Cutoff Current

pA

Dynamic
Common-Source
Forward Transconductance

gfs

Common-Source
Output Conductance

gos

Common-Source Input Capacitance

Ciss

Common-Source
Reverse Transfer Capacitance

Crss

Common-Source
Output Capacitance

Coss

Equivalent Input Noise Voltage

7.5

4.5

mS

VDS = 15 V
V, VGS = 0 V,
V f = 1 kHz
50

50

mS

2.2
0.7

VDS = 15 V, VGS = 0 V
f = 1 MHz

pF
p

1
VDS = 10 V, VGS = 0 V
f = 100 Hz

en

nV
Hz

10

TYPICAL HIGH-FREQUENCY SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits (Typ)
J304

J305

Symbol

Test Conditions

100
MHz

400
MHz

100
MHz

Common-Source Input Conductance

giss

VDS = 15 V, VGS = 0 V

80

800

80

mS

Common-Source Input Susceptance

biss

7.5

mS

Common-Source Output Conductance

goss

mS

Common-Source Output Susceptance

boss

Parameter

400
MHz

Unit

High-Frequency

Common-Source Forward Transconductance

gfs

Common-Source Power Gain

Gps

Noise Figure

NF

VDS = 15 V
V, VGS = 0 V

VDS = 15 V, ID = 5 mA

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms, duty cycle v2%.

RG = 1 kW

60

80

60

0.8

3.6

0.8

4.4

4.2

20

11

1.7

3.8

mS
dB

NH

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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Document Number: 70236

S-50077Rev. E, 24-Jan-05

J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage

10

gfs

12

IDSS @ VDS = 10 V, VGS = 0 V

gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz

0
0

rDS @ ID = 300 mA, VGS = 0 V

gos @ VDS = 10 V, VGS = 0 V

rDS

300

200

20

100

10

0
0

10

10

VGS(off) = 3 V
gfs Forward Transconductance (mS)

0.1 mA

TA = 125_C

IGSS
@
125_C

100 pA
5 mA
1 mA

10 pA

0.1 mA

TA = 25_C

IGSS @ 25_C

0.1 pA

10

VDS = 10 V
f = 1 kHz

8
TA = 55_C

6
25_C

125_C
2

0
0

12

16

0.1

20

VDG Drain-Gate Voltage (V)

10

ID Drain Current (mA)

Output Characteristics

Output Characteristics
15

10
VGS(off) = 2 V

VGS(off) = 3 V
12

8
ID Drain Current (mA)

VGS = 0 V
ID Drain Current (mA)

Common-Source Forward Transconductance

vs. Drain Current

1 mA

1 pA

Gate Leakage Current

5 mA

1 nA

30
gos

VGS(off) Gate-Source Cutoff Voltage (V)

10 nA

50

40

f = 1 kHz

400

VGS(off) Gate-Source Cutoff Voltage (V)

100 nA

IG Gate Leakage (A)

rDS(on) Drain-Source On-Resistance ( )

500

g os Output Conductance ( S)

IDSS

gfs Forward Transconductance (mS)

IDSS Saturation Drain Current (mA)

20

16

On-Resistance and Output Conductance

vs. Gate-Source Cutoff Voltage

0.2 V

0.4 V
4

0.6 V
0.8 V
1.0 V
1.2 V

VGS = 0 V
0.3 V

0.6 V
0.9 V

1.2 V
1.5 V

1.8 V
1.4 V

0
0

VDS Drain-Source Voltage (V)

Document Number: 70236
S-50077Rev. E, 24-Jan-05

0
10

10

VDS Drain-Source Voltage (V)

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J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics

Transfer Characteristics
10

10
VGS(off) = 2 V

VDS = 10 V

VGS(off) = 3 V
8

TA = 55_C

ID Drain Current (mA)

ID Drain Current (mA)

25_C

125_C

TA = 55_C
6

25_C
125_C

0
0

0.4

0.8

1.2

1.6

0.6

Transconductance vs. Gate-Source Voltage

VGS(off) = 2 V

VDS = 10 V
f = 1 kHz

8
TA = 55_C
6

25_C

125_C

2.4

VGS(off) = 3 V

VDS = 10 V
f = 1 kHz

8
TA = 55_C
6

25_C

125_C

0
0

0.4

0.8

1.2

1.6

VGS Gate-Source Voltage (V)

0.6

1.2

1.8

2.4

VGS Gate-Source Voltage (V)

On-Resistance vs. Drain Current

Circuit Voltage Gain vs. Drain Current

100

300

g fs R L
AV + 1 ) R g
L os

TA = 25_C
80

240
VGS(off) = 2 V

AV Voltage Gain

rDS(on) Drain-Source On-Resistance ( )

1.8

Transconductance vs. Gate-Source Voltgage

10

gfs Forward Transconductance (mS)

gfs Forward Transconductance (mS)

10

1.2

VGS Gate-Source Voltage (V)

VGS Gate-Source Voltage (V)

180

120

VGS(off) = 3 V

1
ID Drain Current (mA)

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Assume VDD = 15 V, VDS = 5 V

RL +

60

10

10 V
ID

VGS(off) = 2 V

40

20

60

0
0.1

VDS = 10 V

VGS(off) = 3 V

0.1

10

ID Drain Current (mA)

Document Number: 70236

S-50077Rev. E, 24-Jan-05

J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
vs. Gate-Source Voltage

Common-Source Reverse Feedback Capacitance

vs. Gate-Source Voltage
3

5
Crss Reverse Feedback Capacitance (pF)

f = 1 MHz

Ciss Input Capacitance (pF)

3
VDS = 0 V

VDS = 10 V

0
0

12

16

f = 1 MHz
2.4

1.8
VDS = 0 V

1.2

VDS = 10 V

0.6

0
0

20

VGS Gate-Source Voltage (V)

100

12

16

20

Forward Admittance

100

TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source

bis

10

VGS Gate-Source Voltage (V)

Input Admittance
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source

10

gfs

(mS)

(mS)

gis

0.1
100

bfs

200

500

0.1
100

1000

f Frequency (MHz)

1000

500

f Frequency (MHz)

Reverse Admittance

Output Admittance

10

10
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source

200

bos

brs
1

gos

(mS)

(mS)

grs
0.1

0.1

TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
0.01
100

0.01
200

500

f Frequency (MHz)
Document Number: 70236
S-50077Rev. E, 24-Jan-05

1000

100

200

500

1000

f Frequency (MHz)
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J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Equivalent Input Noise Voltage vs. Frequency

20

Output Conductance vs. Drain Current

20

VGS(off) = 3 V

VDS = 10 V

en Noise Voltage nV /

Hz

gos Output Conductance (S)

16

12

8
ID = 5 mA

16
TA = 55_C

12

25_C

8
125_C
4

VDS = 10 V
f = 1 kHz

VGS = 0 V
0

0
10

100

1k
f Frequency (Hz)

10 k

100 k

0.1

10

ID Drain Current (mA)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70236.
www.vishay.com

Document Number: 70236

S-50077Rev. E, 24-Jan-05

Legal Disclaimer Notice

Vishay

Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

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1