STFW6N120K3, STP6N120K3,

STW6N120K3
N-channel 1200 V, 1.95 typ., 6 A SuperMESH3
Power MOSFET in TO-3PF, TO-220 and TO-247 packages
Datasheet production data

Features
Order codes

VDSS

RDS(on)
max

ID

Ptot

STFW6N120K3

1200 V

< 2.4

6A

63 W

STP6N120K3

1200 V

< 2.4

6A

150 W

STW6N120K3

1200 V

< 2.4

6A

150 W

100% avalanche tested

Extremely large avalanche performance

Very low intrinsic capacitances

Zener-protected

TAB

3
1

Figure 1.

TO-247

TO-220

Applications

TO-3PF

Gate charge minimized

Internal schematic diagram

Switching applications

D(2,TAB)

Description
These SuperMESH3 Power MOSFETs are the
result of improvements applied to
STMicroelectronics SuperMESH technology,
combined with a new optimized vertical structure.
These devices boast an extremely low onresistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.

G(1)

S(3)
AM01476v1

Table 1.

Device summary

Order codes

Marking

Package

STFW6N120K3
STP6N120K3

TO-3PF
6N120K3

STW6N120K3

November 2012
This is information on a product in full production.

Packaging

TO-220

Tube

TO-247

Doc ID 15572 Rev 3

1/17
www.st.com

17

Contents

STFW6N120K3, STP6N120K3, STW6N120K3

Contents
1

Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1

Electrical characteristics (curves)

........................... 6

Test circuits

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

2/17

.............................................. 9

Doc ID 15572 Rev 3

STFW6N120K3, STP6N120K3, STW6N120K3

Electrical ratings

Electrical ratings
Table 2.

Absolute maximum ratings

Value

Symbol

Parameter

Unit
TO-3PF

VGS

Gate- source voltage

TO-220

TO-247

30

ID

Drain current (continuous) at TC = 25 C

ID

Drain current (continuous) at TC = 100 C

3.8

Drain current (pulsed)

20

IDM

(1)

PTOT

Power dissipation at TC = 25 C

IAR

Max current during repetitive or single pulse

avalanche (pulse width limited by TJMAX)

EAS

Single pulse avalanche energy (starting

TJ = 25 C, ID = IAR, VDD = 50 V)

ESD

Gate-source human body model

(C = 100 pF, R = 1.5 k)

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink
(t = 1 s, TC = 25 C)

Tstg

Storage temperature

TJ

63

150

150

180

mJ

kV

3500

-55 to 150

Operating junction temperature

1. Pulse width limited by safe operating area

Table 3.

Thermal data
Value

Symbol

Parameter

Rthj-case

Thermal resistance junction-case

Rthj-amb

Thermal resistance junction-ambient max

TJ

Maximum lead temperature for soldering

purpose

Doc ID 15572 Rev 3

Unit
TO-3PF

TO-220 TO-247

1.98

0.83

50

62.5
300

C/W
50

C/W
C

3/17

Electrical characteristics

STFW6N120K3, STP6N120K3, STW6N120K3

Electrical characteristics
(TC = 25 C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS

On / off states
Parameter
Drain-source
breakdown voltage

Test conditions
ID = 1 mA, VGS = 0

Min.

Typ.

Max.

Unit

1200

IDSS

VDS = 1200 V
Zero gate voltage
drain current (VGS = 0) VDS = 1200 V, TJ = 125 C

1
50

A
A

IGSS

Gate-body leakage
current (VDS = 0)

10

VGS = 20 V

VGS(th)

Gate threshold voltage VDS = VGS, ID = 100 A

RDS(on)

Static drain-source onVGS = 10 V, ID = 2.5 A

resistance

1.95

2.4

Min.

Typ.

Max.

Unit

Table 5.
Symbol

Dynamic
Parameter

Test conditions

Input capacitance
Output capacitance
Reverse transfer
capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

1050
90
1

pF
pF
pF

Co(tr) (1)

Equivalent
capacitance time
related

VGS = 0, VDS = 0 to 960 V

40

pF

Co(er) (2)

Equivalent
capacitance energy
related

VGS = 0, VDS = 0 to 960 V

25

pF

RG

Intrinsic gate
resistance

f = 1 MHz open drain

Qg
Qgs
Qgd

Total gate charge

Gate-source charge
Gate-drain charge

VDD = 960 V, ID = 7.2 A,

VGS = 10 V
(see Figure 20)

39
7.7
23.5

nC
nC
nC

Ciss
Coss
Crss

1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as
Coss when VDS increases from 0 to 80% VDSS.
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS.

4/17

Doc ID 15572 Rev 3

STFW6N120K3, STP6N120K3, STW6N120K3

Table 6.
Symbol
td(on)
tr
td(off)
tf

Table 7.

Electrical characteristics

Switching times on/off

Parameter

Test conditions

Turn-on delay time

Rise time
Turn-off-delay time
Fall time

VDD = 600 V, ID = 3.6 A,

RG = 4.7 , VGS = 10 V
(see Figure 19)

Min.

Typ. Max. Unit

30
12
58
32

Min.

Typ.

6
20

A
A

ns
ns
ns
ns

Source drain diode

Symbol

Parameter

ISD
ISDM (1)

Source-drain current
Source-drain current (pulsed)

VSD (2)

Forward on voltage

ISD = 5 A, VGS = 0

--

1.6

Reverse recovery time

Reverse recovery charge
Reverse recovery current

ISD = 7.2 A, di/dt = 100 A/s

VDD = 60 V TJ = 25 C (see
Figure 24)

580
7
25

ns
C
A

Reverse recovery time

Reverse recovery charge
Reverse recovery current

ISD = 7.2 A, di/dt = 100 A/s

VDD = 60 V, TJ = 150 C
(see Figure 24)

840
9
22

ns
C
A

Min.

Typ.

trr
Qrr
IRRM
trr
Qrr
IRRM

Test conditions

Max. Unit

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%

Table 8.
Symbol
V(BR)GSO

Gate-source Zener diode

Parameter

Test conditions

Gate-source breakdown
voltage

IGS = 1 mA (ID=0)

30

Max. Unit
-

The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the devices ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the devices
integrity. These integrated Zener diodes thus avoid the usage of external components.

Doc ID 15572 Rev 3

5/17

Electrical characteristics

STFW6N120K3, STP6N120K3, STW6N120K3

2.1

Electrical characteristics (curves)

Figure 2.

Safe operating area for TO-3PF

Figure 3.

!-V

)$
!

TO3PF

K
=0.5
0.2

O
N

$3

PE
RA
ITE TION
D IN
BY
M THIS
AX A
2 RE
A

IS



,I

S
S
MS

Thermal impedance for TO-3PF

0.1
-1

10

0.05
0.02

MS
4J#
4C#





Figure 4.



-3

10

-2

10

-1

10

tp (s)

Figure 5.

Thermal impedance for TO-220

Figure 7.

Thermal impedance for TO-247

is
n)

S(
o

pe
ra
ite tion
d
by in t
m his
ax a
RD rea

10s
100s
1ms

m
Li

Tj=150C
Tc=25C
Sinlge
pulse

0.01
0.1

10

100

1000 VDS(V)

Safe operating area for TO-247

AM07309v1

ID
(A)

)
on

10s
100s
1ms

S(

O
pe
m rat
ite ion
d
by in t
m his
ax a
RD rea

is

10

Li

10ms
Tj=150C
Tc=25C

0.1

6/17

-4

10

10ms

0.1

0.01
0.1

10 -5
10

AM07308v1

10

-2

 6$36

Safe operating area for TO-220

ID
(A)

Figure 6.

Single pulse

3INLGE
PULSE




0.01

Sinlge
pulse
1

10

100

1000 VDS(V)

Doc ID 15572 Rev 3

STFW6N120K3, STP6N120K3, STW6N120K3

Figure 8.

Output characteristics

)$
!

Electrical characteristics
Figure 9.

!-V

6'36

Transfer characteristics
!-V

)$
!


6$36

6



6







6

 6$36














Figure 10. Normalized BVDSS vs temperature

AM07911v1

BVDSS
(norm)
1.10

6'36

Figure 11. Static drain-source on-resistance

AM07909v1

RDS(on)
()
2.6

VGS=10V

1.05
2.2
1.00
1.8
0.95
1.4

0.90
0.85
-50

50

100

1
0.5

TJ(C)

Figure 12. Output capacitance stored energy

!-V

%OSS *

1.5

2.5

3.5

4.5

ID(A)

Figure 13. Capacitance variations

AM07912v1

C
(pF)


Ciss



1000



100



Coss




10

Crss















6$36

Doc ID 15572 Rev 3

1
0.1

10

100

VDS(V)

7/17

Electrical characteristics

STFW6N120K3, STP6N120K3, STW6N120K3

Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on-resistance vs
temperature
!-V

6'3
6

6$3
6
6$3





AM079071v1

RDS(on)
()
2.5

VGS=10V

2
1.5


1












0.5


1GN#

Figure 16. Normalized gate threshold voltage

vs temperature
!-V

6'3TH
NORM


0
-75

25

-25

75

125 TJ(C)

Figure 17. Maximum avalanche energy vs

temperature
!-V

%!3
M*




























 4*#

Figure 18. Source-drain diode forward

characteristics
63$
6

!-V

4* #



4* #




4*#





8/17







 )3$!

Doc ID 15572 Rev 3










    4*#

STFW6N120K3, STP6N120K3, STW6N120K3

Test circuits

Test circuits

Figure 19. Switching times test circuit for

resistive load

Figure 20. Gate charge test circuit

VDD
12V

47k

1k

100nF
3.3
F

2200

RL

VGS

IG=CONST

VDD

100

Vi=20V=VGMAX

VD
RG

2200
F

D.U.T.

D.U.T.
VG

2.7k

PW
47k
1k

PW
AM01468v1

AM01469v1

Figure 21. Test circuit for inductive load

Figure 22. Unclamped inductive load test
switching and diode recovery times
circuit

D.U.T.

FAST
DIODE

D
G

VD

L=100H

3.3
F

25

1000
F

VDD

2200
F

3.3
F

VDD

ID

G
RG

Vi

D.U.T.

Pw
AM01470v1

Figure 23. Unclamped inductive waveform

AM01471v1

Figure 24. Switching time waveform

ton

V(BR)DSS

tdon

VD

toff
tr

tdoff

tf

90%

90%
IDM

10%
ID
VDD

10%

0
VDD

VDS
90%

VGS

AM01472v1

Doc ID 15572 Rev 3

10%

AM01473v1

9/17

Package mechanical data

STFW6N120K3, STP6N120K3, STW6N120K3

Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 9.

TO-3PF mechanical data

mm

Dim.
Min.

Typ.

5.30

5.70

2.80

3.20

3.10

3.50

D1

1.80

2.20

0.80

1.10

0.65

0.95

F2

1.80

2.20

10.30

11.50

G1

10/17

Max.

5.45

15.30

15.70

9.80

L2

22.80

23.20

L3

26.30

26.70

L4

43.20

44.40

L5

4.30

4.70

L6

24.30

24.70

L7

14.60

15

1.80

2.20

3.80

4.20

Dia

3.40

3.80

10

Doc ID 15572 Rev 3

10.20

STFW6N120K3, STP6N120K3, STW6N120K3

Package mechanical data

Figure 25. TO-3PF drawing

L3
L

D
E

D1
Dia
L2

L6

L7
F2(3x)
F(3x)
G1

G
R

L5

N
L4
7627132_C

Doc ID 15572 Rev 3

11/17

Package mechanical data

Table 10.

STFW6N120K3, STP6N120K3, STW6N120K3

TO-220 type A mechanical data

mm

Dim.
Min.

Typ.

4.40

4.60

0.61

0.88

b1

1.14

1.70

0.48

0.70

15.25

15.75

D1

12/17

Max.

1.27

10

10.40

2.40

2.70

e1

4.95

5.15

1.23

1.32

H1

6.20

6.60

J1

2.40

2.72

13

14

L1

3.50

3.93

L20

16.40

L30

28.90

3.75

3.85

2.65

2.95

Doc ID 15572 Rev 3

STFW6N120K3, STP6N120K3, STW6N120K3

Package mechanical data

Figure 26. TO-220 type A drawing

0015988_typeA_Rev_S

Doc ID 15572 Rev 3

13/17

Package mechanical data

Table 11.

STFW6N120K3, STP6N120K3, STW6N120K3

TO-247 mechanical data

mm.

Dim.
Min.

Typ.

4.85

5.15

A1

2.20

2.60

1.0

1.40

b1

2.0

2.40

b2

3.0

3.40

0.40

0.80

19.85

20.15

15.45

15.75

5.30

14.20

14.80

L1

3.70

4.30

5.45

L2

14/17

Max.

5.60

18.50

3.55

3.65

4.50

5.50

5.30

5.50

Doc ID 15572 Rev 3

5.70

STFW6N120K3, STP6N120K3, STW6N120K3

Package mechanical data

Figure 27. TO-247 drawing

0075325_G

Doc ID 15572 Rev 3

15/17

Revision history

STFW6N120K3, STP6N120K3, STW6N120K3

Revision history
Table 12.

16/17

Document revision history

Date

Revision

Changes

15-Apr-2009

First release.

02-Aug-2010

Document status promoted from preliminary data to datasheet.

Inserted Section 2.1: Electrical characteristics (curves).

14-Nov-2012

Figure 13: Capacitance variations and Figure 14: Gate charge vs

gate-source voltage have been corrected.
Minor text changes.

Doc ID 15572 Rev 3

STFW6N120K3, STP6N120K3, STW6N120K3

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Doc ID 15572 Rev 3

17/17