WMC: Challenges in Model-Based HPA Design

Application of Non-Linear Models in a

range of challenging GaN HEMT Power
Amplifier Designs
Ray Pengelly, Brad Millon, Don Farrell,
Bill Pribble and Simon Wood
Cree Inc., Research Triangle Park, NC 27709

Outline
Attributes of GaN HEMTs
Cree GaN HEMT Models
Design Examples
Broadband CW Amplifiers
Linear WiMAX Amplifier
Future Model Improvements
Conclusions

Attributes of GaN HEMTs

High Voltage Operation
High power densities 4 to 8 watts/mm at 28 and
50 volt operation respectively
High Frequency Performance present Cree process has fT of
25 GHz
p
a
g
d
n
High Efficiency
a
B
e
Low Quiescent Current
Wid
High Native Linearity
Low capacitance per peak watt (12% of LDMOS and 21% of
GaAs MESFET) supports broad bandwidths
Enable new amplifier architectures
Highly correctable under DPD
Almost constant CDS as a function of VDS great for Drain
Modulation

Models for GaN HEMTs

Equivalent-circuit based approach
Relatively simple extraction
Process sensitive based on individual elements
Simple implementation using commercial harmonic balance
simulators
Significant historical information for model basis and validation
Non-linearity introduced as required by element
Drain current source is dominant non-linearity
Gate current formulation includes breakdown and forward
conduction
Voltage variations of parasitic capacitances derived from
charge formulations
Model data fit extends over drive, frequency, bias, and temperature
Many hundreds of successful hybrid and MMIC designs

Model Schematic
pncap3
X15
sc=sc
scf=scf
cg1=cgd pF
cg2=0.6
cg3=0.1
vgg0=-21 V

R
R3
R=0.01 Ohm
SDD6P
SDD6P1
I[1,0]=(vg)/5e8
I[2,0]=id1
I[3,0]=(_v3)*gdsc
I[4,0]=(_v4)*gmc
I[5,0]=-vd*idt
I[6,0]=(vdf)/5e4
C[1]=
Cport[1]=
vg1

SRL
SRL1
R=(rg/sc+rg1/(sc*scf)) Ohm
L=(lg/sc+lg1/(scf*sc)) nH

Port
P1
Num=1

R
R5
R=1e6 Ohm

pncap3
X12
sc=sc
scf=scf
cg1=cgs pF
cg2=cg2
cg3=cg3
vgg0=vgg0 V
R
R1
R=(ri/(sc*scf)) Ohm

Drain current
SRL
SRL4
R=(rd/(sc*scf)) Ohm
L=(ld/sc+ld1/(sc*scf)) nH

C
C7
C=1.0 uF

Port
P2
Num=2

C
C9
C=(cds*sc*scf) pF

VCVS
SRC1
G=1
Port
P4
Num=4

Port
P5
Num=5

SRL
SRL3
R=(rs/(sc*scf)) Ohm
L=(ls/sc) nH

R
R6
R=1e6 Ohm

Thermal resistance

vd1g

R
R2
R=rth Ohm

C
C8
C=30.0 nF

Port
P8
Num=8

Based on 13-element MESFET model (H. Kondoh 1986 MTT-S)

ADS version shown using non-linear equation-based elements
Easily changed during design process
Speed comparable to C-coded version
AWR version uses C code with model wizard

More details on GaN HEMT Model

Most FET models implement a gate
current-control characteristic that
transitions from the sub-threshold
Quad Linear
Compression
region to the linear gate control
Sub
region directly, without treating the Threshold
intermediate region, called the
Ids, mA
gm and Ids
Gm, mS
500
quadratic region. Fager et al.
implemented an equation and new
parameters to fit the quadratic
region. This leads to better
250
agreement with measured IMD and
other nonlinear characteristics.
Gate charge is partitioned into gate- 0 -4
-3
-2
-1
0
0.5
Gate voltage, volts
source and gate-drain charge. Each
charge expression is a function of
Blue is DC transconductance
both VDS and VGS. Using charge
Red is drain current
partitioning, it is possible to fit most
GaN HEMT capacitance functions
and observed charge conservation.
30

4000

25

3333

20

2667

15

2000

10

1333

|S(2,1)|[1,X] (L)
Schematic 1

666.7

IDC(I_METER.AMP1) (R, mA)

Schematic 1

p1: Freq = 0.05 GHz

p1

-15

-10

-5
Voltage (V)

More details on GaN HEMT Model

The model includes new capacitance functions as well as modeling of the

drain-source breakdown and self heating.
The model has four ports, with the extra port providing a measure of the
temperature rise. The voltage between the external thermal circuit port and
the source node is numerically equal to the junction temperature rise in
degrees C. This occurs because the current source in the thermal circuit is
numerically equal to the instantaneous power dissipated in the FET and the
resistance, R_TH is numerically equal to the thermal resistance. The RC
product of the thermal circuit is the thermal time constant.
The model addresses the sharp turn-on knee in GaN HEMTs leading to the
accurate prediction of IMD sweet spots in Class A/B operation.

Drain Current Model

0.15

0.5

gm

permute(Is_high.i)

0.10

0.05

0.00
-4

-3

-2

-1

Vlow

0.4
0.3
0.2
0.1
0.0
0

10

15

20

25

30

35

40

Vhigh

Transconductance curve fit to Gm from small-signal model fits over bias range
Output conductance dispersion model
Peak current and knee voltage fit from load-pull - includes trap effects
Pinch-off fit from DC IV-characteristics gives model of drain current
IV function similar to Fager-Statz formulation good model of pinch-off needed
to accurately predict intermodulation distortion

45

Temperature Dependence Self-heating

output power

36.5
36
35.5
35
34.5
34
0

1mm gate width

50

100

150

200

chuck temp

Drain current is only temperature dependent model element

Drain current scales to provide -0.1 dB/10oC reduction in power for
current-limited load-line
Self-heating included using a thermal resistance calculated from finite
element analysis of die and package.
Thermal performance due to package needs to be included where
appropriate

Feedback Capacitance Cgd (pF)

Feedback Capacitance - CGD

0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0

10

20

30

40

50

60

Drain Voltage

Feedback capacitance is a strong function of drain voltage

Inclusion of this effect necessary to fit small-signal data
Non-linearity changes harmonic generation from the model effects
efficiency and linearity predictions
Output Capacitance CDS is linear no voltage dependence (weak
anyway)

Input Capacitance Cgs (pF)

Input Capacitance - CGS

1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-3.5

-3

-2.5

-2

-1.5

-1

-0.5

Gate Voltage (V)

Input capacitance is a strong function of gate voltage

CGS is also a function of drain voltage, but this non-linearity is not
included at present
The gate-voltage non-linearity also effects models harmonic
generation

GaN HEMT Model - Small-Signal

measured
30

model

20

a(2,2)
b(2,2)
b(1,1)
a(1,1)

bg
ag

Measured Gmax
Model Gmax

25

15

10
1E9

1E10

2E10

freq, Hz

freq (1.000GHz to 14.00GHz)

On-wafer S-parameters of 0.5 mm HEMT 25OC baseplate

Major challenge of modeling for high power circuits scaling from reasonable
test cell to large periphery output stages successfully implemented for scaling
factors >100:1
Non-linear model fits small-signal parameters over a range of bias voltages
All measurements performed using 1% duty cycle, 20s pulsed bias to control
thermal effects

GaN HEMT Model - Large-Signal

Power Contour Levels:
36 dBm
35 dBm
34 dBm

measured
model

On-wafer load-pull of 0.5 mm HEMT

Measured at 3.5 GHz, VDS=48V, Id~25%IDSS, 25OC chuck temperature
PAE contours not used for modeling due to sensitivity to harmonic loading
PAE verified using hybrid amplifier measurements

Basic Thermal Features of High Voltage GaN

240 Watts CW RF from a

28.8mm HEMT operating
at 50 volts drain voltage
Assume 60% DC to RF
conversion efficiency
160 watts dissipated heat
Active chip area is 2.5 sq.
mm so heat density is
> 40 kilowatts per
square inch !
Much emphasis on new
amplifier architectures to
improve drain efficiencies

Broadband Amplifier Performance

Trade-Off Analysis - Background
Broadband (0.8 to 2.2 GHz) push-pull
amplifier to provide 100 watts peak
power
Two GaN HEMT die in Gemini
package
HEMTs attached to composite
material shims within Cu-Mo-Cu
package
Study drain efficiencies over the band
and impact on thermal management
Comparison of different matching
approaches and termination
impedances

Theta-jc is 1.1 deg C/watt

Basic Amplifier

Different matching topologies

Drain-to-Gate Feedback
Lossy Match
Multi-section reactive
Lossy Match with Feedback

PORT
P=1
Z=50 Ohm

TLIN
ID=TL6
Z0=43.09 Ohm
EL=195.3 Deg
F0=1.5 GHz

TLIN
ID=TL7
Z0=28.29 Ohm
EL=57.64 Deg
F0=1.5 GHz

TLIN
ID=TL8
Z0=9.149 Ohm
EL=42.65 Deg
F0=1.5 GHz

PORT
P=3
Z=50 Ohm
3

DC
RF
2

CAP
ID=C7
C=1.243 pF

DC
&
RF

BIASTEE
CAP
ID=X1
ID=C1
C=2.271 pF

CAP
ID=C8
C=2.414 pF

PORT
P=2
Z=50 Ohm

Concentrate on Lossy Match case

Input Match Schematic
DCVS
ID=V1
V=28 V

SWPVAR
ID=SWP4
VarName="Power"
Values=stepped(10,40,.1)
UnitType=None
Xo

. . . Xn

I_METER
ID=AMP1

ATTEN
ID=U1
R=50 Ohm
LOSS=3 dB

TLIN
ID=TL3
Z0=10.16 Ohm
EL=70.63 Deg
F0=1.5 GHz

TLIN
ID=TL4
CAP
Z0=18.75 Ohm
ID=C4
C=1.006 pFEL=86.31 Deg
F0=1.5 GHz

TLIN
ID=TL5
CAP
Z0=35.25 Ohm
ID=C5
C=0.6011 pF EL=93.57 Deg
F0=1.5 GHz

RF
2

PORT
P=2
Z=50 Ohm

BIASTEE
ID=X1

SUBCKT
ID=S1
NET="IMN Lossy Match"
1

DC
DC
&
1 RF

Power=10
PORT1
P=1
Z=50 Ohm
Pwr=Power dBm

PORT
P=3
Z=50 Ohm

PORT
P=1
Z=50 Ohm

3
1

2
1

SUBCKT
ID=S3
NET="GaN HEMT Die Model G3"

PORT
P=2
Z=50 Ohm

SUBCKT
ID=S2
NET="OMN Lossy Match"

DCVS
ID=V2
V=2.2 V

Output Match Schematic

Overall Schematic

Simulated Amplifier Performance

Output Power at P3dB and Drain Efficiency

Efficiency

Small Signal Gain

Gain = 13.2 dB 0.8 dB

POUT = 46 to 59 watts
Drain Efficiency = 49 to 66%
Worst Case Dissipated Heat is 54 watts
(per transistor)

POUT

Thermal Performance

3.75 W/mm dissipated

54 watts per transistor

Assuming TJ limit of 200OC,

maximum dissipated heat of
108 watts and theta-jc of 1.1
deg C/Watt leads to a maximum
case temperature of 81 deg C
The thermal characteristics of
the die and the package are
very important
The design requires a
composite material shim such
as silver-diamond (theta jc
=550 W/mK) mounted on a
Super-CMC package flange
(theta jc = 370 W/mK)

Pdiss

3.5

2.5

Pdiss (W/mm)

Pdiss Lossy
Match

1.5

0.5

Before full electrical design is

completed broadband amplifiers
require thermal design even
with GaN HEMTs!

0
0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

Frequency (GHz)

Dissipated Power as a function of frequency

Comparison of Dissipated Power vs.

Frequency for 4 Amplifier Approaches
Lossy match with feedback

Pdiss

4.5

Multi-section reactive

3.5

Pdiss
Multisection

Pdiss(W/mm)

Pdiss Lossy
Match

2.5

Pdiss LM w
Feedback

Pdiss MS w
Feedback

1.5

Feedback

Lossy Match

0.5

0
0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

Frequency (GHz)

Large-Signal Modeling of Broadband Amplifiers

invaluable in selecting optimum topology for both
electrical and thermal performance

Measured 0.5 to 2.5 GHz Push-Pull

Amplifier Performance

25 to 50 ohm coupler
Drain Efficiency at Device Sat
70.00

60.00

Drain Efficiency (%)

50.00

Power out at Device Sat (W)

120.00

40.00

30.00

20.00

100.00
10.00

80.00

Psat (W)

0.00
0.000

0.500

1.000

1.500

2.000

Frequency (GHz)

60.00

40.00

20.00

0.00
0.000

0.500

1.000

1.500
Frequency (GHz)

2.000

2.500

3.000

Full amplifier with

coupler insertion losses
Average Gain = 15 dB
Psat > 80 watts and
Drain Efficiencies > 45%

2.500

3.000

500 to 2700 MHz Amplifier

using Cree CGH40010F
DCVS
ID=V2
V=28 V

I_METER
ID=AMP1

DCVS
ID=V1
V=2.05 V

Lossy Match
IND
ID=L2
L=200 nH

IND
ID=L1
L=200 nH

PORT_PS1
P=1
Z=50 Ohm
PStart=-8 dBm
PStop=32 dBm
PStep=5 dB

CAP
ID=C5
C=8.513 pF

TLIN
ID=TL3
Z0=53.79 Ohm
EL=26.09 Deg
F0=3 GHz

TLIN
ID=TL2
Z0=12.22 Ohm
EL=21.88 Deg
F0=3 GHz

TLIN
ID=TL1
Z0=70.11 Ohm
EL=32.91 Deg
F0=3 GHz

RES
ID=R1
R=51 Ohm
RES
ID=R2
R=0 Ohm

CAP
ID=C3
C=0.9191 pF

PIPAD
ID=P1
Z1=50 Ohm
Z2=50 Ohm
DB=2 dB

CAP
ID=C4
C=1.096 pF

CAP
ID=C2
C=1.187 pF

CAP
ID=C1
C=15.55 pF

CGH40010F_r2
ID=40010F1
TNOM=105

PORT
P=2
Z=50 Ohm

Simulated Performance of
500 to 2700 MHz GaN HEMT PA

Small Signal S21 S11 and S22

30

POUT and Efficiency Vs Input Power

80

DCRF(PORT _ 2 )[ *, X]
Re a l Ci rc u i t
DB(PT (PORT _2 ))[ *,X] (d Bm )
5 0 0 to 2 70 0 M Hz Sta g e

20

DCRF(PORT _ 2 )[ *, X]
5 0 0 to 2 70 0 M Hz Sta g e
DB(PT (PORT _2 ))[ *,X]
Re a l Ci rc u i t

p2

60

0
p3
p1

-10

DB(|S(1,1)|)[X,2]
500 to 2700 MHz Stage
DB(|S(2,1)|)[X,2]
500 to 2700 MHz Stage

-20

DB(|S(2,2)|)[X,2]
500 to 2700 MHz Stage

dBm and %

dB

10

40

20
p1: Pwr = -3 dBm
p2: Pwr = -3 dBm
p3: Pwr = -3 dBm

-30
0.5

1.5
Frequency (GHz)

2.5

2.7

0
-8

12
Input Power (dBm)

Worst Case Heat Dissipation is 9 watts

Theta-jc of packaged transistor is 5 deg C/watt
Max. channel temperature at 85 deg C case is 130 deg C.

22

32

Measured Performance of
500 to 2700 MHz GaN HEMT PA
Excellent agreement between
simulations and measurements
Measured efficiencies between
50 and 78% over the band

Output Power

Output Power vs. Frequency

44
0.25 GHz

40

0.50 GHz
0.75 GHz

38

1.00 GHz

P OUT (dBm)

36

Simulated
andVs
measured
Simulated
Actual

20

42

1.25 GHz

34

1.50 GHz

32

1.75 GHz

30

2.00 GHz

28

2.25 GHz

26

2.50 GHz

24

2.70 GHz

22

3.00 GHz

20
10

15

14

16

18

20

22

24

26

28

30

32

34

PIN (dBm)

10

Saturated Output Power and Drain Efficiency

Saturated
Output Power and Efficiency

5
0
-5

p1
p4
p3
p6

-10
0.5

1.5
Frequency (GHz)

2.5

2.7

p1: Pwr = -3 dBm p2: Pwr = -3 dBm p3: Pwr = -3 dBm

p4: Pwr = -3 dBm p5: Pwr = -3 dBm p6: Pwr = -3 dBm

P OUT (dBm) / Efficiency (%)

dB

12

p5
p2

82
80
78
76
74
72
70
68
66
64
62
60
58
56
54
52
50
48
46
44
42
40
38
36

Efficiency
Power

0.25

0.5

0.75

1.25

1.5

1.75

Frequency (GHz)

2.25

2.5

2.75

3.25

PSAT
EFFICIENCY @PSAT

Linear WiMAX Amplifier

Simulation versus Measured Data
60 Watt, 2.3 to 2.8 GHz linear amplifier
design
Developed an accurate packaged
transistor model using the Cree GaN
HEMT scale-able die model
Circuit developed to address Fixed and
Mobile Access WiMAX applications such
as
802.16-2004
802.16e
WiBro
The design targets were as follows:
Average Output Power > 8W
EVM < 2.5%
Drain Efficiency > 25% (under WiMAX
stimulus)

CGH27060F Packaged Device Model

CG H40045F_r1

ID=CGH27060
ID=CG H27030
TNOM=25
TNOM=25
2

1
CAP
ID=C5
C=0.03 pF

MLIN
ID=TL1
W=250 mil
L=60mil

GaNg28v2_r3
ID=GaNv2sc1
TNOM=25
SC=20
SCF=1.44
RTH=2.7
VDD=50

SRL
ID=RLD1
R=0.007Ohm
L=0.285 nH

SRL
ID=RLD2
R=0.007 Ohm
L=Lbond nH

V_METER
ID=VM1

PORT
P=5
Z=50 Ohm

CAP
ID=C2
C=0.06pF

MSUB
Er=9.6
H=20 mil
T=1.4 mil
Rho=1
Tand=0
ErNom=9.6
Name=Alum_pkg1

CAP
ID=C3
C=0.06 pF

CAP
I D=CDpad1
C=0. 48 pF

MLIN
ID=TL2
W=250 mil
L=60 mil

CAP
ID=C1
C=0.06pF
CAP
ID=CDpad2
C=0.48 pF

SRL
ID=RL1
R=0.001Ohm
L=0.015nH

CAP
ID=C4
C=0.06pF

PORT
P=6
Z=50Ohm

Input Circuit Model

ML IN
ID=T L1
W =3 5 m il
L=2 3 m il

SU BCK T
ID=S 3
NE T="Re sis to r_ 10 0 _ Oh m Ce nt e r1"

M LI N
I D=TL2
W =3 5 mil
L =2 3 mil

MD L X
1

P O RT
P =1
Z =50 Oh m

MLIN
ID=TL 5
W =4 4 mil
L=2 5 m il

ML IN
ID=T L3
W=1 0 m il
L=4 0 m il

M ST EP $
I D=TL 8

S UB CK T
ID=S 2
NE T=" In du c tive Lin e _ 2p 5 _ Ne w1 "

MS UB
E r=3 .6 6
H =20 mil
T =1. 4 mil
R ho =1
T an d =0 .0 0 4
E rNo m=3 .6 6
N am e=R og e rs 1

MD L X

SU BC KT
ID=S 1
NE T="In d u ct ive L in e_ 2p 5_ Ne w1"

ML IN
ID=TL 4
W =1 0 mil
L =4 0 mil

P OR T
P =2
Z=5 0 O h m

SU BC KT
ID =S 2
N ET ="Gate B ias F eed w ith T rans Line_02 _06_06"

MO Dca tc 06 0 3 0 01
ID=A TC _60 0 S_ C1
C=2.2 p F
MS UB =
Sim _m od e =0
To lera n ce =1
PA DW =3 5 mil

MLE F
ID= Open
W = 30 m il
L=9 3 m il

M OD catc 06 03001
ID =AT C_6 00S _C 1
C =0.85 pF
M SU B=
Sim _m ode= 0
Tol era nc e=1
PAD W =35 m il

SU BCK T
ID= S4
NE T="Input La unc h_AS T UN ED "

3
1

MD LX

2
1

PO R T
P= 1
Z =5 0 O hm

PO R T
P= 1
Z=5 0 O hm

M LIN
I D=T L1 3
W =7 0 mil
L =200 m il

MSTE P$
ID =TL14

MLIN
ID =TL12
W =20 mi l
L= 130 m il

M LIN
I D=T L11
W =7 0 mil
L =200 mi l

MSTE P$
ID =TL10

M STEP $
I D=T L9

M STEP $
I D= TL1 5

MSU B
Er= 3.66
H= 20 m il
T= 1.4 mil
Rh o=1
Ta nd= 0.004
ErN om =3.66
Na me= Roge rs 1

SU BC KT
ID =S1
NE T= "S ta bil ity C irc uit_N ew"

M LIN
ID =T L2
W =1 0 mil
L =120 mi l

MLI N
ID =TL1
W =44 mi l
L= 25 m il

M STE P$
ID =TL8
MLIN
ID =T L4
W =44 mil
L= 565 m il

P O RT
P =2
Z= 50 O hm

M SU B
Er =3.66
H =20 m il
T =1.4 m il
R ho=1
T a nd=0.004
Er N om =3.48
N am e=R oge rs 1

POR T
P=2
Z= 50 Ohm

S UB CKT
ID = S5
N ET ="Input T ank J unctio n_EM 1 "

S UB CK T
I D= S3
N ET ="G ate Pad 3 Por t"

M LIN
ID =TL_S H
W =20 m il
L=2 30 m il

3
SU BC KT
ID =S8
N ET= "Input_S hunt_GN D _03_21_ 071"

Output Circuit Model

3

ML I N
ID = Db i as L 2
W=Wba
i s mi l
L= L b i as m li

M B END 90 X
I D= M S 4
W = W o u t mi l
M =0 . 5

S UB C K T
I D= S 5
NET = "D rai n B i as T e rm n
i a to
i n"
M B E ND 90 X
I D= M S 3
W = W o u t mi l
M = 0. 5

M B E N D9 0 X
ID = MS 1
W =Wba
i s mi l
M = 0 .5

M L EF
I D= O S t u b1
W = 1 1 0 mi l
L =3 0 m il

ML I N
ID = Db i as L 1
W=Wba
i s mi l
L= 2 4 0 m i l
P O RT
P=1
Z = 5 0 O hm

L st u b _ A = 50
W o u t = 34
L o ut = 6 1
L st u b _ M= 7 0
Wd ln
i e = 1 00
W b i as = 4 0
Lb a
i s = 25 5

ML E F
ID = OS t u b 2
W = 11 0 m li
L= 3 0 mi l

M L IN
I D = T L3
W = W o ut m i l
L = L o ut m i l

S UB C K T
I D= S 3
NE T = "D rai n B l o ck Ca p P a d_ 2 p 5 "

M DL X
1

S U BCK T
I D =S 2
N E T = "Dra i n P ad 4 P o rt _2 p 5 "

M L IN
I D =T L 1 6
W =1 6 0 mi l
L =2 6 5 m il

MS TE P $
I D= T L 19

M LI N
I D= T L 2 0
W =1 1 0 m il
L =2 m il

ML I N
I D= Db i a sL
W = W b i as m li
L =2 4 0 mi l

M B E N D9 0 X
ID = MS 6
W =Wba
i s mi l
M = 0 .5

M OD ca t c 10 0 B0 0 1
I D= A T C _1 0 0 B_ C1
C= 8 . 2 pF
M S UB =
Si m _m o d e= 0
T o l era n c e= 1
PA D W = 1 10 m li

ML I N
I D= T L 2
W = W o u t mi l
L =5 0 m li

SU B CK T
I D= S 1
NE T= " Dra n
i Bi a s T e rm i na ti o n"

M B E ND 90 X
I D= M S 2
W = W o u t mi l
M = 0. 5

M L EF
I D =O S t u b 4

M L IN
I D= T L 7
W = W o u t m li
L = L ou t m li

M L EF
I D= O S t u b6
W = 7 2 mi l
L =2 6 m il

W =4 0 m li
L =1 7 4 m il

M CR OS S$
I D =T L 9

M LI N
I D= T L 6
W = 3 4 mi l
L = 60 m li

R ho = 1
T a n d =0 . 0 0 4
E rN o m= 3 . 4 8
N am e = Ro g ers 4 3 50

M STEP$
I D= T L 1 3

M LI N
I D= T L 1
W = 4 4 mi l
L = 1 44 m li

S U B CKT
I D= S 7
NE T= " 3p o rt _ co rn e r"

ML I N
ID = T L1 5
W = 70 m i l
L= 2 0 0 m i l

M LI N
I D= T L 1 0
W = 2 0 mi l
L = 1 30 m li

M STEP$
I D =T L 4

ML I N
ID = T L1 1
W = 70 m i l
L= 2 0 0 m i l

2
1

M LI N
I D= T L 8
W = W o u t mi l
L = 45 m i l

M L IN
I D = TL 1 7
W = 48 m li
L = 1 2 mi l

M L EF
I D =O S t u b 3
W =4 0 m li
L =1 7 4 m il

M SUB
E r= 3 . 6 6
H =2 0 m li
T =1 .4 m i l

M LI N
ID= Db i a sL 3
W = W b i a s m il
L = Lb i a s m i l

M LI N
I D= T L 5
W = W o u t mi l
L = 44 m li

S U B CK T
I D= S 6
NE T =" Ha rmo n i c A s s s
i t _ A S T UN ED"

M CR OS S $
4 I D =T L 1 8

M L EF
I D= O S t u b5
W = 7 2 mi l
L=2 6 m il

M STEP$
I D =T L 1 2

M STEP$
I D= T L 1 4

P ORT
P =2
Z = 5 0 Oh m

Fully Modeled Layout of Amplifier

1
J
9 8 7 6 5 4 3 2 1

L
C

3
J

2
J

Actual Printed Circuit Board

Simulated and Measured Amplifier

14

13

12

-1

11

-3

10

-5
DB(|S(1,1)|) (R)
Amp_SS_AsTuned

DB(|S(2,1)|) (L)
Amp_SS_AsTuned

DB(|S(2,1)|) (L)
fixt20_G28V2144L1w3__5

DB(|S(1,1)|) (R)
fixt20_G28V2144L1w3__5

DB(|S(2,2)|) (R)
Amp_SS_AsTuned

5
1.8 1.9

2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9

Frequency (GHz)

3.1 3.2

-7
-9
-11
-13
-15

Return Loss (dB)

Small Signal Gain (dB)

Small Signal Frequency Response

15

Simulated Linearity of Amplifier

2-Tone IMD vs Average Ouput Power

60

IM3L_Pave (L)
IM3U_Pave (L)

-10

50

IM5L_Pave (L)
IM5U_Pave (L)

-20

40

DE_Pave (R)

-30

30

-40

20

-50

10

-60

0
26

28

30

32
34
36
38
40
42
2 Tone Average Output Power (dBm)

44

46

Drain Efficiency (%)

3rd & 5th Order IMD (dBc)

Measured Linearity of Amplifier

EVM and Efficiency vs. Average Output Power

EVM (%)

3.50

40.0%

EVM 2.5GHz
DE 2.5GHz

35.0%

3.00

30.0%

2.50

25.0%

2.00

20.0%

1.50

15.0%

1.00

10.0%

0.50

5.0%

0.00
22.0

24.0

26.0

28.0

30.0

32.0

34.0

36.0

Average Output Power (dBm)

38.0

40.0

0.0%
42.0

Drain Efficiency (%)

4.00

Measured Linearity of Amplifier

EVM and Efficiency vs Frequency
4.00

40.0%

EVM @ 26dBm
3.50

35.0%

EVM @ 39dBm

3.00

30.0%

2.50

25.0%

2.00

20.0%

1.50

15.0%

1.00

10.0%

0.50

5.0%

0.00
2.300

2.400

2.500

Frequency (GHz)

2.600

0.0%
2.700

Drain Efficiency (%)

EVM (%)

Efficiency @ 2.5% EVM

Future GaN HEMT

Model Improvements

Behavioral models to allow direct simulation

of various digital waveforms
Improved active and passive switch models
Improved models for switch mode PAs
Additional noise models
Support for simulators other than ADS and
MWO

Conclusions
Successful development of GaN HEMT
large-signal models
Models are scale-able over > 100:1 gate width ratio
Models
Are broadband
Accurately predict DC, s-parameters, dynamic
load lines, non-linearities
Include self-heating
Can be used in a range of amplifier types
Demonstrated a variety of hybrid circuit applications
Equally useful for MMIC amplifier designs
Future extensions to include other features such as
noise