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2SD1577 Silicon Diffused Power Transistor: General Description

This document provides information on the 2SD1577 silicon diffused power transistor. It is a high-voltage, high-speed switching npn transistor in a plastic envelope with an integrated efficiency diode, primarily used in switching power circuits of color televisions. Key specifications include a collector-emitter voltage up to 1500V, current up to 3A, power dissipation up to 40W, saturation voltage below 5V, and transition frequency above 8MHz. It has fast switching times below 1ms for line deflection circuits operating at 16kHz.

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Alejandro Borrego Dominguez
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24 views2 pages

2SD1577 Silicon Diffused Power Transistor: General Description

This document provides information on the 2SD1577 silicon diffused power transistor. It is a high-voltage, high-speed switching npn transistor in a plastic envelope with an integrated efficiency diode, primarily used in switching power circuits of color televisions. Key specifications include a collector-emitter voltage up to 1500V, current up to 3A, power dissipation up to 40W, saturation voltage below 5V, and transition frequency above 8MHz. It has fast switching times below 1ms for line deflection circuits operating at 16kHz.

Uploaded by

Alejandro Borrego Dominguez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Silicon Diffused Power Transistor

2SD1577
GENERAL DESCRIPTION

Highvoltage,high-speed switching npn transistors in a


plastic envelope with integrated efficiency diode,primarily for use in switching power circuites of colour
television receivers
TOP-3Fa

QUICK REFERENCE DATA


SYMBOL

VCESM
VCEO
IC
ICM
Ptot
VCEsat
Icsat
VF
tf

PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time

CONDITIONS
VBE = 0V

Tmb 25
IC = 3.0A; IB =0.8A
f = 16KHz

TYP

ICsat = 3.0A; f = 16KHz

MAX
1500
600
3
6
40
5
1.0

UNIT
V
V
A
A
W
V
A
V
s

LIMITING VALUES
SYMBOL

VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj

PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature

CONDITIONS
VBE = 0V

Tmb 25

MIN
-65
-

MAX
1500
600
3
6

TYP
-

MAX
1.0
2.5

40
150
150

UNIT
V
V
A
A
A
A
W

ELECTRICAL CHARACTERISTICS
SYMBOL

ICE
ICES

PARAMETER
Collector cut-off current

VCEOsust

Collector-emitter sustaining voltage

VCEsat
VBEsat
hFE
VF
fT
Cc
ts
tf

Collector-emitter saturation voltages


Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz

CONDITIONS
VBE = 0V; VCE = VCESMmax
VBE = 0V; VCE = VCESMmax
Tj = 125
IB = 0A; IC = 100mA
L = 25mH
IC = 3.0A; IB = 0.8A
Ic=3.0A,IB=0.8A
IC = 0.5A; VCE = 5V

5
1.5

3
90

Switching times(16KHz line deflecton circuit)

IC = 0.1A; VCE =10V


VCB = 10V
IC=3A,IB(end)=0.8A,VCC=105V

Turn-off storage time Turn-off fall time

IC=3A,IB(end)=0.8A,VCC=105V

0.7

1.0

Wing Shing Computer Components Co., (H.K.)Ltd.


Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153


E-mail: [email protected]

UNIT
mA
mA

V
V
V
MHz
pF
s
s

This datasheet has been download from:


www.datasheetcatalog.com
Datasheets for electronics components.

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