Mcqs in DC Biasing - Fets: Online Questions and Answers Topic Outline
Mcqs in DC Biasing - Fets: Online Questions and Answers Topic Outline
MCQsinDCBiasingFETs|PinoyBIX
ThisistheMultipleChoiceQuestionsinDCBiasingFETsfromthe
bookElectronicDevicesandCircuitTheory10thEditionbyRobertL.
Boylestad.IfyouarelookingforareviewerinElectronicsEngineering
thiswilldefinitelyhelp.Icanassureyouthatthiswillbeagreathelpin
reviewingthebookinpreparationforyourBoardExam.Makesureto
familiarizeeachandeveryquestionstoincreasethechanceofpassing
theECEBoardExam.
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A)0A
B)0.7mA
C)0.3mA
D)Undefined
2.Whichofthefollowingcurrentequationsistrue?
A)IG=ID
B)IG=IS
C)ID=IS
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D)IG=ID=IS
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3.FortheFET,therelationshipbetweentheinputandoutputquantitiesis
_____duetothe_____terminShockley'sequation.
A)nonlinear,cubed
B)linear,proportional
C)nonlinear,squared
4. The input controlling variable for a(n) _____ is a current level and a
voltagelevelfora(n)_____.
A)BJT,FET
B)FET,BJT
C)FET,FET
D)BJT,BJT
5.CalculatethevalueofVDS.
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A)0V
B)8V
C)4.75V
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D)16V
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6.Theselfbiasconfigurationeliminatestheneedfortwodcsupplies.
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A)True
B)False
7.Whichofthefollowingis(are)trueofaselfbiasconfigurationcompared
toafixedbiasconfiguration?
A)Oneofthedcsuppliesiseliminated.
B)AresistorRSisadded.
C)VGSisafunctionoftheoutputcurrentID.
D)Alloftheabove
8.WhichofthefollowingrepresentsthevoltagelevelofVGSinaselfbias
configuration?
A)VG
B)VGS(off)
C)VS
D)VP
9.WhatisthenewvalueofRD whenthereis7VacrossVDS?
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A)3k
B)3.3k
C)4k
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D)5k
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10. Which of the following is a false statement regarding the dc load line
whencomparingselfbiasandvoltagedividerconfigurations?
A)Botharelinearlines.
B)Bothcrosstheorigin.
C)Bothintersectthetransfercharacteristics.
D)BothareobtainedbywritingKirchhoff'svoltagelaw(KVL)
attheinputsideloop.
11.ForwhatvalueofRD isthevoltageacrossVDSzero?
A)2.400k
B)5.167k
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C)6.167k
D)6.670k
12.CalculatethevalueofVDS.
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A)0V
B)0.35V
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C)3.8V
D)33.5V
13.Whichofthefollowingdescribe(s)thedifference(s)betweenJFETsand
depletiontypeMOSFETs?
A)VGScanbepositiveornegativeforthedepletiontype.
B)IDcanexceedIDSSforthedepletiontype.
C)Thedepletiontypecanoperateintheenhancement
mode.
D)Alloftheabove
14. At what value of RS does the circuit switch from depletion mode to
enhancementmode?
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A)250
B)500
C)10M
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D)Noneoftheabove
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15.ForwhatvalueofR2isVGSQequalto1V?
A)10M`
B)100M
C)110M
D)220M
A)True
B)False
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A)2.4k
B)5k
C)6.2k
D)Noneoftheabove
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18.DeterminethevalueofVDSQ.
A)3.5V
B)4.86V
C)7.14V
D)10V
19.CalculatethevalueofVDSQ.
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A)0V
B)20V
C)30V
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D)40V
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20.WhatarethevoltagesacrossRD andRS?
A)0V,0V
B)5V,5V
C)10V,10V
D)20V,20V
21.CalculateVD .
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A)23.0V
B)17.0V
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C)4.6V
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D)12.4V
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22. Specification sheets typically provide the value of the constant k for
enhancementtypeMOSFETs.
A)True
B)False
23.CalculateVDS'.
A)0V
B)6V
C)16V
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D)11V
24.CalculateVCE.
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A)0V
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B)2V
C)3V
D)5.34V
25.GiventhevaluesofVDQandIDQforthiscircuit,determinetherequired
valuesofRD andRS.
A)2k,2k
B)1k,5.3k
C)3.2k,400
D)2.5k,5.3k
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26.CalculatethevalueofRS.AssumeVGSQ=2V.
A)0k
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B)1.68k
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C)6.81k`
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D)8.5k
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27.CalculatethevalueofRD.
A)2k
B)3k
C)3.5k
D)4.13k
A)True
B)False
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29. Seldom are current levels measured since such maneuvers require
disturbingthenetworkstructuretoinsertthemeter.
A)True
B)False
30.CalculatethevalueofVDS.
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A)3V
B)3V
C)4V
D)4V
31.DeterminethequiescentvaluesofID andVGS.
A)1.2mA,1.8V
B)1.5mA,1.5V
C)2.0mA,1.2V
D)3.0mA,0.8V
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32.CalculateVDSQ.
A)1.0V
B)1.50V
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C)2.56V
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D)3.58V
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33.OntheuniversalJFETbiascurve,theverticalscalelabelled_____can,
initself,beusedtofindthesolutionto_____configurations.
A)m,fixedbias
B)M,fixedbias
C)M,voltagebias
D)m,voltagebias
34.Throughproperdesign,a______canbeintroducedthatwillaffectthe
biasinglevelofavoltagecontrolledJFETresistor.
A)photodiode
B)thermistor
C)laserdiode
D)Zenerdiode
35. For the noninverting amplifier, one of the most important advantages
associated with using a JFET for control is the fact that it is _____ rather
than_____control.
A)dc,ac
B)ac,dc
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Fill-in-the-blanks Questions
1.Forthefieldeffecttransistor,therelationshipbetweentheinputandthe
outputquantitiesis_____.
A)linear
B)nonlinear
C)3rddegree
D)Noneoftheabove
2.TheinputcontrollingvariableforanFETtransistorisa_____level.
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A)resistor
B)current
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C)voltage
D)Alloftheabove
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3.ThecontrolledvariableontheoutputsideofanFETtransistorisa_____
level.
A)current
B)voltage
C)resistor
D)Noneoftheabove
4. For _____, Shockley's equation is applied to relate the input and the
outputquantities.
A)JFETs
B)depletiontypeMOSFETs
C)enhancementtypeMOSFETs
D)JFETsanddepletiontypeMOSFETs
A)opencircuit,lowimpedance
B)shortcircuit,lowimpedance
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C)opencircuit,highimpedance
D)Noneoftheabove
6.Inafixedbiasconfiguration,thevoltagelevelofVGSisequalto_____.
A)VS
B)VG
C)VGS(off)
D)VP
7. The ratio of current ID to IDSS is equal to _____ for a fixedbias
configuration.
A)0
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B)0.25
C)0.5
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D)1
A)0
B)0.25
C)0.5
D)1
A)theoutput
B)theinput
C)boththeinputandoutput
D)Noneoftheabove
10.Theslopeofthedcloadlineinaselfbiasconfigurationiscontrolledby
_____.
A)VDD
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B)RD
C)RG
D)RS
11. _____ levels of RS result in _____ quiescent values of ID and _____
negativevaluesofVGS.
A)Increased,lower,less
B)Increased,higher,less
C)Increased,higher,more
D)Increased,less,lower
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12.Theslopeofthedcloadlineinavoltagedivideriscontrolledby_____.
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A)R1
B)R2
C)RS
D)Alloftheabove
13.InadepletiontypeMOSFET,thetransfercharacteristicrises_____as
VGSbecomesmorepositive.
A)lessrapidly
B)morerapidly
C)thesame
D)Noneoftheabove
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A)selfbias
B)fixedbiaswithnoVGG
C)voltagedivider
D)Noneoftheabove
15.InanenhancementtypeMOSFET,thedraincurrentiszeroforlevelsof
VGSlessthanthe_____level.
A)VGS(Th)
B)VGS(off)
C)VP
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D)VDD
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A)thethresholdvoltageVGS(Th)
B)alevelofdraincurrentID(on)
C)anID(on)
D)Alloftheabove
A)RG
B)RD
C)VDG
D)Noneoftheabove
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A)3.75
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B)5
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C)12.0
D)24
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19._____mustbeconsideredinthetotaldesignprocess.
A)Dcconditions
B)Levelofamplification
C)Signalstrength
D)Alloftheabove
20.InaJFET,thelevelof_____islimitedtovaluesbetween0VandVP.
A)VSQ
B)VDGQ
C)VDSQ
D)VGSQ
21.ThelevelofVDSistypicallybetween_____%and_____%ofVDD .
A)0,100
B)10,90
C)25,75
D)Noneoftheabove
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22. In a universal JFET bias curve, the vertical scale labeled m is used to
findthesolutiontothe_____configuration.
A)fixedbias
B)selfbias
C)voltagedivider
D)Noneoftheabove
23.InauniversalJFETbiascurve,theverticalscalelabeledMisusedfor
findingthesolutiontothe_____configuration.
A)fixedbias
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B)selfbias
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C)voltagedivider
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D)Noneoftheabove
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24.InauniversalJFETbiascurve,thehorizontalaxisis_____.
A)VDS
B)ID/IDSS
C)thenormalizedlevel
D)VGS
25.InpchannelFETs,thelevelofVGSis_____whilethelevelofVDSis
_____.
A)negative,negative
B)positive,positive
C)negative,positive
D)positive,negative
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2014www.PinoyBIX.com
credit:RobertL.Boylestad
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