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Mcqs in DC Biasing - Fets: Online Questions and Answers Topic Outline

This document provides 31 multiple choice questions about DC biasing of field effect transistors (FETs). The questions cover topics like fixed bias, self bias, voltage divider bias, depletion type MOSFETs, and enhancement type MOSFETs. The correct answers are also provided.

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0% found this document useful (0 votes)
74 views20 pages

Mcqs in DC Biasing - Fets: Online Questions and Answers Topic Outline

This document provides 31 multiple choice questions about DC biasing of field effect transistors (FETs). The questions cover topics like fixed bias, self bias, voltage divider bias, depletion type MOSFETs, and enhancement type MOSFETs. The correct answers are also provided.

Uploaded by

mountyzoa
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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25/07/2016

MCQsinDCBiasingFETs|PinoyBIX

MCQs in DC Biasing FETs

ThisistheMultipleChoiceQuestionsinDCBiasingFETsfromthe
bookElectronicDevicesandCircuitTheory10thEditionbyRobertL.
Boylestad.IfyouarelookingforareviewerinElectronicsEngineering
thiswilldefinitelyhelp.Icanassureyouthatthiswillbeagreathelpin
reviewingthebookinpreparationforyourBoardExam.Makesureto
familiarizeeachandeveryquestionstoincreasethechanceofpassing
theECEBoardExam.

Online Questions and Answers Topic Outline


MCQsinDCBiasingFieldEffectTransistor
MCQsinFixedBiasConfiguration
MCQsinSelfBiasConfiguration
MCQsinVoltageDividerBiasing
MCQsinDepletionTypeMOSFETs
MCQsinEnhancementTypeMOSFETs
MCQsinSummaryTable
MCQsinCombinationNetworks
MCQsinDesign
MCQsinPChannelFETs
MCQsinUniversalJFETBiasCurve

Practice Exam Test Questions


Choosetheletterofthebestanswerineachquestions.

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1. What is the approximate current level in the gate of an FET in dc


analysis?

A)0A
B)0.7mA
C)0.3mA
D)Undefined

2.Whichofthefollowingcurrentequationsistrue?

A)IG=ID
B)IG=IS
C)ID=IS

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D)IG=ID=IS

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3.FortheFET,therelationshipbetweentheinputandoutputquantitiesis
_____duetothe_____terminShockley'sequation.

A)nonlinear,cubed
B)linear,proportional
C)nonlinear,squared

4. The input controlling variable for a(n) _____ is a current level and a
voltagelevelfora(n)_____.

A)BJT,FET
B)FET,BJT
C)FET,FET
D)BJT,BJT

5.CalculatethevalueofVDS.

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A)0V
B)8V
C)4.75V

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D)16V

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6.Theselfbiasconfigurationeliminatestheneedfortwodcsupplies.
Bethefirstofyourfriendstolikethis

A)True
B)False

7.Whichofthefollowingis(are)trueofaselfbiasconfigurationcompared
toafixedbiasconfiguration?

A)Oneofthedcsuppliesiseliminated.
B)AresistorRSisadded.
C)VGSisafunctionoftheoutputcurrentID.
D)Alloftheabove

8.WhichofthefollowingrepresentsthevoltagelevelofVGSinaselfbias
configuration?

A)VG
B)VGS(off)
C)VS
D)VP
9.WhatisthenewvalueofRD whenthereis7VacrossVDS?

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A)3k
B)3.3k
C)4k

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D)5k

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10. Which of the following is a false statement regarding the dc load line
whencomparingselfbiasandvoltagedividerconfigurations?

A)Botharelinearlines.
B)Bothcrosstheorigin.
C)Bothintersectthetransfercharacteristics.
D)BothareobtainedbywritingKirchhoff'svoltagelaw(KVL)
attheinputsideloop.

11.ForwhatvalueofRD isthevoltageacrossVDSzero?

A)2.400k
B)5.167k
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C)6.167k
D)6.670k

12.CalculatethevalueofVDS.

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A)0V
B)0.35V

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C)3.8V
D)33.5V

13.Whichofthefollowingdescribe(s)thedifference(s)betweenJFETsand
depletiontypeMOSFETs?

A)VGScanbepositiveornegativeforthedepletiontype.
B)IDcanexceedIDSSforthedepletiontype.
C)Thedepletiontypecanoperateintheenhancement
mode.
D)Alloftheabove

14. At what value of RS does the circuit switch from depletion mode to
enhancementmode?

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A)250
B)500
C)10M

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D)Noneoftheabove
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15.ForwhatvalueofR2isVGSQequalto1V?

A)10M`
B)100M
C)110M
D)220M

16. Depletiontype MOSFETs do not permit operating points with positive


valuesofVGSandlevelsofID thatexceedIDSS.

A)True
B)False

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17. For what value of RS can the depletiontype MOSFETs operate in


enhancementmode?

A)2.4k
B)5k
C)6.2k
D)Noneoftheabove

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18.DeterminethevalueofVDSQ.

A)3.5V
B)4.86V
C)7.14V
D)10V

19.CalculatethevalueofVDSQ.

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A)0V
B)20V
C)30V

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D)40V
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20.WhatarethevoltagesacrossRD andRS?

A)0V,0V
B)5V,5V
C)10V,10V
D)20V,20V

21.CalculateVD .

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MCQsinDCBiasingFETs|PinoyBIX

A)23.0V
B)17.0V

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C)4.6V

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D)12.4V
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22. Specification sheets typically provide the value of the constant k for
enhancementtypeMOSFETs.

A)True
B)False

23.CalculateVDS'.

A)0V
B)6V
C)16V
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D)11V

24.CalculateVCE.

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A)0V
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B)2V
C)3V
D)5.34V

25.GiventhevaluesofVDQandIDQforthiscircuit,determinetherequired
valuesofRD andRS.

A)2k,2k
B)1k,5.3k
C)3.2k,400
D)2.5k,5.3k

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26.CalculatethevalueofRS.AssumeVGSQ=2V.

A)0k

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B)1.68k

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C)6.81k`

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D)8.5k
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27.CalculatethevalueofRD.

A)2k
B)3k
C)3.5k
D)4.13k

28. In the design of linear amplifiers, it is good design practice to choose


operatingpointsthatdonotcrowdthesaturationlevelorcutoffregions.

A)True
B)False

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29. Seldom are current levels measured since such maneuvers require
disturbingthenetworkstructuretoinsertthemeter.

A)True
B)False

30.CalculatethevalueofVDS.

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A)3V
B)3V
C)4V
D)4V

31.DeterminethequiescentvaluesofID andVGS.

A)1.2mA,1.8V
B)1.5mA,1.5V
C)2.0mA,1.2V
D)3.0mA,0.8V

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32.CalculateVDSQ.

A)1.0V
B)1.50V

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C)2.56V

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D)3.58V
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33.OntheuniversalJFETbiascurve,theverticalscalelabelled_____can,
initself,beusedtofindthesolutionto_____configurations.

A)m,fixedbias
B)M,fixedbias
C)M,voltagebias
D)m,voltagebias

34.Throughproperdesign,a______canbeintroducedthatwillaffectthe
biasinglevelofavoltagecontrolledJFETresistor.

A)photodiode
B)thermistor
C)laserdiode
D)Zenerdiode

35. For the noninverting amplifier, one of the most important advantages
associated with using a JFET for control is the fact that it is _____ rather
than_____control.

A)dc,ac
B)ac,dc
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Fill-in-the-blanks Questions
1.Forthefieldeffecttransistor,therelationshipbetweentheinputandthe
outputquantitiesis_____.

A)linear
B)nonlinear
C)3rddegree
D)Noneoftheabove

2.TheinputcontrollingvariableforanFETtransistorisa_____level.

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A)resistor
B)current

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C)voltage
D)Alloftheabove

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3.ThecontrolledvariableontheoutputsideofanFETtransistorisa_____
level.

A)current
B)voltage
C)resistor
D)Noneoftheabove

4. For _____, Shockley's equation is applied to relate the input and the
outputquantities.

A)JFETs
B)depletiontypeMOSFETs
C)enhancementtypeMOSFETs
D)JFETsanddepletiontypeMOSFETs

5. The coupling capacitors are _____ for the dc analysis and


_____________fortheacanalysis.

A)opencircuit,lowimpedance
B)shortcircuit,lowimpedance
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MCQsinDCBiasingFETs|PinoyBIX

C)opencircuit,highimpedance
D)Noneoftheabove

6.Inafixedbiasconfiguration,thevoltagelevelofVGSisequalto_____.

A)VS
B)VG
C)VGS(off)
D)VP
7. The ratio of current ID to IDSS is equal to _____ for a fixedbias
configuration.

A)0

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B)0.25
C)0.5

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D)1

8. When plotting the transfer characteristics, choosing VGS = 0.5VP will


resultinadraincurrentlevelof_____IDSS.

A)0
B)0.25
C)0.5
D)1

9. The dc load line is drawn using the equation obtained by applying


Kirchhoff'svoltagelaw(KVL)at_____sideloop(s)ofthecircuit.

A)theoutput
B)theinput
C)boththeinputandoutput
D)Noneoftheabove

10.Theslopeofthedcloadlineinaselfbiasconfigurationiscontrolledby
_____.

A)VDD
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MCQsinDCBiasingFETs|PinoyBIX

B)RD
C)RG
D)RS
11. _____ levels of RS result in _____ quiescent values of ID and _____
negativevaluesofVGS.

A)Increased,lower,less
B)Increased,higher,less
C)Increased,higher,more
D)Increased,less,lower

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12.Theslopeofthedcloadlineinavoltagedivideriscontrolledby_____.

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A)R1
B)R2
C)RS
D)Alloftheabove

13.InadepletiontypeMOSFET,thetransfercharacteristicrises_____as
VGSbecomesmorepositive.

A)lessrapidly
B)morerapidly
C)thesame
D)Noneoftheabove

14. In _____ configuration(s) a depletiontype MOSFET can operate in


enhancementmode.
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MCQsinDCBiasingFETs|PinoyBIX

A)selfbias
B)fixedbiaswithnoVGG
C)voltagedivider
D)Noneoftheabove

15.InanenhancementtypeMOSFET,thedraincurrentiszeroforlevelsof
VGSlessthanthe_____level.

A)VGS(Th)
B)VGS(off)
C)VP

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D)VDD

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16. Specification sheets typically provide _____ for enhancementtype


MOSFETs.

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A)thethresholdvoltageVGS(Th)
B)alevelofdraincurrentID(on)
C)anID(on)
D)Alloftheabove

17. In a feedbackbias configuration, the slope of the dc load line is


controlledby_____.

A)RG
B)RD
C)VDG
D)Noneoftheabove

18.ForR2smallerthan_____kthevoltageVD isequaltoVDD =16V.

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A)3.75

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B)5

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C)12.0
D)24

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19._____mustbeconsideredinthetotaldesignprocess.

A)Dcconditions
B)Levelofamplification
C)Signalstrength
D)Alloftheabove

20.InaJFET,thelevelof_____islimitedtovaluesbetween0VandVP.

A)VSQ
B)VDGQ
C)VDSQ
D)VGSQ
21.ThelevelofVDSistypicallybetween_____%and_____%ofVDD .

A)0,100
B)10,90
C)25,75
D)Noneoftheabove
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22. In a universal JFET bias curve, the vertical scale labeled m is used to
findthesolutiontothe_____configuration.

A)fixedbias
B)selfbias
C)voltagedivider
D)Noneoftheabove

23.InauniversalJFETbiascurve,theverticalscalelabeledMisusedfor
findingthesolutiontothe_____configuration.

A)fixedbias

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B)selfbias

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C)voltagedivider

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D)Noneoftheabove
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24.InauniversalJFETbiascurve,thehorizontalaxisis_____.

A)VDS
B)ID/IDSS
C)thenormalizedlevel
D)VGS
25.InpchannelFETs,thelevelofVGSis_____whilethelevelofVDSis
_____.

A)negative,negative
B)positive,positive
C)negative,positive
D)positive,negative

Check your work.


AnswerinDCBiasingFETs

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Complete List of Chapter Quiz in Electronic


Devices and Circuit Theory
MultipleChoiceQuestionsinElectronicDevicesandCircuit
Theory

2014www.PinoyBIX.com

credit:RobertL.Boylestad

Search

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Publishedby:FroydWess
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