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2N2222A

Transistor

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rrebollar
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77 views2 pages

2N2222A

Transistor

Uploaded by

rrebollar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF or read online on Scribd
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N @ B PNEw ENGLAND SEMICONDUCTOR MAXIMUM RATINGS also available as ET RENT JAN ANTE, Cainer Eames Vela ah Gentna runrost eevee Dl TRANSISTORS faa Vea a Fan boa Denison STs 7 os a : Derate above 25°C 2.28, mwfc i! Derate above 25°C 685 mw/c om Thy al one erains — 7} a} A é Tempertare Renee row ELECTRICAL CHARACTERISTICS (T, = 25°C unless otherwise noted) Panes [ae ey wom ee nam, nam x0 Tana Ba Raa Va Toa WE Wenaie Va 0 ve Iuaia Nz | ante cata Cn at Sj Sere et an nam on | wat verge eats tare Ita an i‘ Wer sive ceo anazaia 2 | saw aon iat Te Ser ane 1c=0.1 mAde, Vee = 10 Vde 2N2221, 2N22I1A Mee 2 Rae Nae % lest mAde, Vox 10¥de inna Naa ss Ic= 0 mAde, Voy = 10 Ve, Ty =-55°C 2N2221A 15 een % le= 10m Yes = OVE) IRB nia a | a0 Nan nae 3 Nana 3 G Lake Street Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 THAR-ROOHIG REV! NEW ENGLAND SEMICONDUCTOR PoP Ds 2N222 PoP Ps FNEw ENGLAND SEMICONDUCTOR 2N222: JAN. JANTX, JANTXY ELECTRICAL CHARACTERISTICS (T= 28°C unless otherwise noted) continued [ ‘Characteristics [_Svmbot—[ Min | Wax [tai] ‘ON CHARACTERISTICS (CONTINUED) Colletor-Fmitter Saturation Voltage (1) Vie c= 150 mAde,. 2nm021, 2N2222 oa 2NM221A, 2N2222A 03 4 2Nm221, 2N2222 16 2N22214, INIA Lo Bave-Emitier Saturation Valiage (1) Varoar Vie Jen 180mAde, Iy= 15 mAde 2nn21, 22222 os | 13 2N2IA, 2NDIA a6 | 12 Ic =500mAde, Ip = $0 mAde 2n2221, 2N2222 26 2N22IA,2NZIA 20 'SMALL-SIGNAL CHARACTERISTICS ‘Current-Gain = Bandwidth Product (2) Te=20mAG, Veq=20-Vde, f= 100 MHz 2N2221 bp | 250 Mit, 2N222 300 ‘Output Capacitance Tome Vey = 10 Vie, ly 0, f= 100KH7 or Taput Capacitance Ts - Ven= 05 Vee, le 0, £100 He 2N2221, 2N2222 oF 2N2021A, INIA Toput Trapedanee Te= LOmAdS, Veq~ 10 Vde, f= LOH? 2N22214 bie | no | 35 | kotms 2N2222A, 20 | 80 Je=HOmAde, Veg" 10 Vide, f= LO kHz 2N22218 02 | 10. 2N22224, 025 | 135 ‘Sivall Signal Current = Te= LO mA, Ver =10 Vdc, f= LOKH2 —2N22210 he | 30 | 150 2N22224 50 | 300 Je=1OmAGe, Vex=10 Ve, P= LOKH2—2N2221A, s0 | 300 35_| 35, olse Figure WF e100 Ade, Ver ~ 10 Vado, so | ap K,=10kohm f" LOkHz NRA ‘SWITCHING CHARACTERISTICS Delay time | Ver = 30 Vat, Vasian = 05 Vie u os Rise Time Je= 150 mAde. lay = 1S mAde D 25_| as ‘Storage Time | Voc» 10 Vie. r= 150 made ry zs [as Fall Time 1g) typ 1S mAde a | as (Pulse Test: Pulse Width = 300us, Duty Cycle (0)! Tisdetined asthe frequency at hich [fe] extapottes to unity 6 Lake Strost Lawrence, MA__ 01881 NEW ENGLAND SEMICONDUCTOR .200.446-1158 / (978) 704-1665 / FAX: (978) 680-0803 TERR REV: =

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