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Chapter 13 Oscillators and Mixers

1. The document describes microwave oscillators and mixers used in communication systems. It discusses one-port negative resistance oscillators, transistor oscillators, and dielectric resonator oscillators (DROs) as microwave oscillator types. 2. Mixers are described as either single-ended or balanced, with examples of diode and FET mixers. Key mixer characteristics like conversion loss and noise figure are also covered. 3. An example problem calculates the conversion gain of a single-ended FET mixer given circuit parameters like drain resistance and gate-source capacitance.

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87 views

Chapter 13 Oscillators and Mixers

1. The document describes microwave oscillators and mixers used in communication systems. It discusses one-port negative resistance oscillators, transistor oscillators, and dielectric resonator oscillators (DROs) as microwave oscillator types. 2. Mixers are described as either single-ended or balanced, with examples of diode and FET mixers. Key mixer characteristics like conversion loss and noise figure are also covered. 3. An example problem calculates the conversion gain of a single-ended FET mixer given circuit parameters like drain resistance and gate-source capacitance.

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Bảo Bình
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© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
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Chapter 13 Oscillators and mixers

13.2 Microwave oscillators


one-port negative resistance oscillator, transistor oscillator,
DRO (dielectric resonator oscillator)
13.5 Mixers
single-ended mixer, balanced mixer, FET mixers

13-1

13.2 Microwave oscillators


one-port negative resistance oscillators
nonlinear
linear
@ steady state
Xin(I,w)
I
XL(w)
KVL ( Z L Z in ) I 0
Rin(I,w)
RL
I 0 RL Rin 0, X L X in 0
negative
passive load Rin 0
in, Zin L, ZL
Discussion
1. oscillator concept
noise circuit unstable Rin(I,w)+RL(w) < 0
feedback and amplify near wo
at steady state Rin(Io,wo)+RL = 0, Xin(Io,wo)+XL(wo) = 0
oscillation at wo with output power Po = 1/2Io2R
2. Zin+ZL = 0 in L = 1
L

Z L Z o Zin Z o Zin Z o
1

Z L Z o Zin Z o Zin Z o in
13-2

3. A high-Q tuning circuit enhances the oscillation stability


using perturbation analysis
ZT ( I , s ) Z L ( s ) Z in ( I , s ) 0, s jw

0 ZT

ZT ( I , s ) ZT ( I o , so )
s jw

s
so , Io

ZT / I
ZT / s

ZT
I

I 0
so , Io

I j
so , Io

ZT / I Z *T / w
ZT / w

so , Io

if I 0 occurs 0 for a stable oscillation


Z Z *T
( RT jX T ) ( RT jX T )
Im T

0,
or
Im

R X T X T RT
T

0
I w
I w
R X T X in Rin
RL X L RL

0 for a passive load in

0
I
I
w
I w
I w
( X L X in )
X
T
0
w
w

13-3

4. oscillator design consideration


selection of device operation point for stable oscillation and
good o/p power, large signal performance, phase noise,
frequency pulling,
5. Ex.13.2 a diode with in=1.2540 @6GHz
Zin=-44+j123, ZL =44-j123
0.254l

50

diode

0.308l

L, ZL

13-4

in, Zin

transistor oscillator

Terminating
network

[S]

Load
network
(output port)

S in>1
out>1 L
Zinnegative ZLnegative
1.
2.
3.

Select transistor configuration to enhance its instability


Select L to produce large value of negative Rin
Choose RS = -Rin/3, XS = -Xin

Discussion
1. at steady state in S = 1 out L= 1

1 S11 S
S S
1
in S11 12 21 L L
, S11S22 S12 S21
S
1 S22 L
S22 S

out S22

S12 S21 S S22 S

L out 1
1 S11 S
1 S11 S
13-5

2. Ex13.3 FET (CE) @4GHz


S11 0.72 116, S12 0.0357, S21 2.6 76, S22 0.73 54

(CG) with a 5nH inductor


S '11 2.18 35, S '12 1.2618, S '21 2.7596, S '22 0.52155

o/p stability circle


CL 1.0833, RL 0.665

select
L 0.59 104 a large in 3.96 2.4
Zin 84 j1.9 Z S

Rin
jX in 28 j1.9
3

|in|=1

unstable
region
L

load

L-plane

S in
13-6

L
R
C
1:
N

DRO (dielectric resonator oscillator)


ZL
Zo

Zin
Zo

N 2R
Z ( w) N Z in ( w)
1 j 2QU w / wo
2

R
R
QU
wo L
wo L
N 2R
g

2
2
RL / N
2Z o / N
Qe
2Z o
wo L
wo L
Zo N 2 R Zo
N 2R
g

Z o N 2 R Z o 2Z o N 2 R 1 g
1
13-7

Discussion
1. DRO examples

l/4

Terminating
circuit

Terminating
circuit

13-8

2. Ex13.4 BJT @2.4GHz


S11 1.8130, S12 0.445, S21 3.836, S22 0.7 63

DR Qu=1000
select S (S11S~1) to give a large out

out S22

S12 S21 S
1 S11 S

S 0.6 130 a large out 10.7132, Z out 43.7 j 6.1


Rout
jX out 14.6 j 6.1
3
'S S e j 2lr 0.6180 lr 0.431l

ZL

N 2 R 12.5
Z 12.5 g

0.25
Zo
50
'
S

lr
l/4

S S in out ZL
13-9

13.5 Mixers
single-ended mixer
RF

IF

RF

IF

LO
down converter

LO
C(vLO)

(vRF vLO ) 2
G'
i (t )
G 'd d (a cos wrf t b cos wLOt ) 2
2
2
vIF (t ) cos( wrf wLO )t

wIF

+
vRF
R(vLO)

linear time-varying
components

wRF wLO wRF


LSB
USB
13-10

Discussion
1. heterodyne receiver
channel
select filter

LNA

lower
Q

LPF
w1

w2
Aocoswot
wo

Relax the Q required of the channel-select filter.


Down-conversion mixer typically has high noise, its then preceded
by a LNA.

13-11

2. problem of heterodyne receiver


Image signal degrades the receiver sensitivity.

LPF
wm

w1
wIF

wIF
Aocoswot

wIF
wo

One can use an image-reject filter, but it introduces losses.


image reject
filter

image
reject
filter
wm

w1

Aocoswot

2wIF
13-12

3. choice of IF depends on
the amount of image noise
the spacing between the desired band and the image
the loss of image-reject filter
trade-off between sensitivity and selectivity
high IF

image reject filter

w1

wm

interferer

reject image

channel select filter

wIF

2wIF
low IF

w1

wm
2wIF

wIF

suppress nearby interferer


13-13

4. dual-IF hetrodyne receiver


Partial channel selection at progressively lower center frequencies
Relax the Q required of each filter
Frequency planning, NF, IP3 and gain calculation are important

band
select
filter
BPF 1

LNA

image
reject
filter

Acos
LPF 5
ADC

channel
select
filter

BPF 2

I
BPF 3

LO 1

Acos(t+)
+Bsin (t+)

13-14

sint
LO 2
cost

channel
select filter
Bsin
LPF 4

Q
ADC

5. Ex 13.7 IS-54 digital cell telephone f RF 869 ~ 894GHz,


f IF 87MHz
f LO f RF f IF

956 ~ 981MHz
(869 ~ 894) 87
782 ~ 807 MHz

f RF ,m
1043 ~ 1048MHz

f RF ,m
699 ~ 720 MHz

f LO
782 ~ 807 MHz

f RF
f LO
869 ~ 894 MHz 956 ~ 981MHz

f RF
869 ~ 894 MHz

13-15

6. mixer characteristics
available RF input power
conversion loss
Lc (dB) 10 log
IF output power
DSB noise figure = SSB noise figure / 2
SSB T ( To TSSB )Gr To Gi TSSB

T To ( Gr Gi )
Gr

DSB T ( To TDSB )( Gr Gi ) TDSB

T To ( Gr Gi )
Gr Gi

LO/RF isolation
7. single-ended diode mixer
relative high noise figure, high conversion loss, high-order
nonlinearities, no isolation between LO and RF, large output current
at LO frequency
13-16

8. single-ended FET mixer


Gate-bias is near the pinch-off region, LO signal then switches FET
between high and low transconductance states to give mixing function.
VRF

vcRF VcRF cos wRF t


VcRF VRF

Rg

1/ jwRF C gs

Ri

Z g Ri 1/ jwRF C gs

VRF

1 jwRF C gs ( Ri Z g )

RO

Vc
S

VLO

D
Cgs
gmVc

Rd RL

RF
c

g m (t )v

, g m (t ) g o 2 g n cos nwot g1VcRF cos wIF t


n 0

VDIF g1VcRF

Rd Z L
Rd Z L
g1VRF

Rd Z L 1 jwRF C gs ( Ri Z g ) Rd Z L
2

Gc

PIF ,ava
PRF ,ava

VDIF RL / Z L
2

VRF / 4 Rg

4 Rg RL VDIF

2
VRF
ZL

Rg Ri

g12 Rd
Gc
2
RL Rd
4 wRF
C gs2 Ri

9. Ex13.8 A single-ended FET mixer R d 300, R i 10, C gs 0.3 pF


g 12 R d
g 1 10mS G c
36.6 15.6dB
2
2

4w RF C gs R i 13-17

10. single-balanced mixer

good
RF/LO
isolation

RF
LO

180
hybrid

LPF

IF

phasor representation
IF IIF
IIF

IF
VLO VRF

VRF

VLO VRF

13-18

VRF

LO AM noise suppression

In,IF=0

IF

Vn VLO

In,IF

VLO Vn

Vn

In,IF
Vn

LO even-harmonic suppression
I1
V1

I 2 aV2 bV22 cV23 dV24


v1 vLO cos wLO t vRF cos wRF t

V2

IIF = I1-I2

I1 aV1 bV12 cV13 dV14

I2 v v cos w t v cos w t
2
LO
LO
RF
RF

13-19

I2 I 1
V2

V1

good
RF
RF VSWR

90
hybrid

poor RF/LO LO
isolation

IF

LPF

0 j 1 0 1
0 0 j 1 0 0 0

1 j 0 0 1 0 1 j j 0 0 1 j 0

0
1
0
0
j
0
1
1
0
0
j

2
2

0
1
j
0
0
0
0
1
j
0
0
j
2

IF

IF
VRF VLO 90

VLO VRF 90

13-20

VIF 90

VIF 90

11. double-balanced mixer


A
D2 D1

RF

180
hybrid

B
D4

B'

A, A virtual ground for LO


B, B virtual ground for RF
vL>0D1, D2 on
vL<0D3, D4 on

D3
A'
IF

LO

vL

good RF/LO isolation


LO and RF even-harmonics suppressed
13-21

12. image-reject mixer


RF

v rA

vr

viA

90
hybrid

LO
v

v1

90
hybrid

viB

B
r

vr USB LSB USB vu ( wo wi )t

LSB
IF

v 2 USB

LSB vL ( wo wi )t

vrA USB( wo wi )t 90 LSB( wo wi )t 90


vrB USB( wo wi )t LSB( wo wi )t
viA USBwi t 90 LSB wi t 90 USBwi t 90 LSBwi t 90
viB USBwi t LSB wi t USBwi t LSBwi t
v1 viA 90 viB 2 LSBwi t
v2 viA viB 90 2USBwi t
13-22

13. differential mixer

Gilbert cell mixer


IF
signal

IF
signal

IF balun

IF balun
LO
signal

LO
balun
RF
signal

LO
balun
LO signal
RF
balun

ADS examples: Ch13_prj

13-23

RF
signal

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