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Data Sheet Transistor2

This document summarizes the specifications of the 2SC5297 silicon NPN power transistor from JMnic. It is a high breakdown voltage, high reliability transistor intended for applications like ultra-high definition CRT displays and horizontal deflection output. Key specs include a collector-base voltage of 1500V, collector-emitter voltage of 800V, collector current of 8A peak 16A, and power dissipation of 60W. It has a TO-3PML package and is suitable for high-speed switching applications.

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Edi Sukriansyah
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94 views

Data Sheet Transistor2

This document summarizes the specifications of the 2SC5297 silicon NPN power transistor from JMnic. It is a high breakdown voltage, high reliability transistor intended for applications like ultra-high definition CRT displays and horizontal deflection output. Key specs include a collector-base voltage of 1500V, collector-emitter voltage of 800V, collector current of 8A peak 16A, and power dissipation of 60W. It has a TO-3PML package and is suitable for high-speed switching applications.

Uploaded by

Edi Sukriansyah
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Product Specification www.jmnic.

com

Silicon NPN Power Transistors 2SC5297

DESCRIPTION
With TO-3PML package
High breakdown voltage, high reliability.
High speed

APPLICATIONS
Ultrahigh-definition CRT display
Horizontal deflection output applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector

3 Emitter

Fig.1 simplified outline (TO-3PML) and symbol

Maximum absolute ratings(Ta=25)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 8 A

ICM Collector current-peak 16 A

TC=25 60 W
PC Collectorl power dissipation
3 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

JMnic
Product Specification www.jmnic.com

Silicon NPN Power Transistors 2SC5297

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEsat Collector-emitter saturation voltage IC=5A;IB=1.25 A 5 V

VBEsat Base-emitter saturation voltage IC=5A;IB=1.25 A 1.5 V

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0 800 V

IEBO Emitter cut-off current VEB=4V IC=0 1.0 mA

ICBO Collector cut-off current VCB=800V IE=0 10 A

ICES Collector cut-off current VCE=1500V; RBE=0 1 mA

hFE-1 DC current gain IC=1 A ; VCE=5V 20 30

hFE-2 DC current gain IC=5A ; VCE=5V 4 7

Switching times

tstg Storage time IC=4A;RL=50 3.0 s


IB1=0.8A; IB2=-1.6A
tf Fall time VCC=200V 0.1 0.2 s

JMnic
Product Specification www.jmnic.com

Silicon NPN Power Transistors 2SC5297

PACKAGE OUTLINE

Fig.2 Outline dimensions

JMnic

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