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UNIT-V - Special Active Filters 2 Marks Questions:: Que 6.15, Sol. in Notes, End Sem Question 2016

The document discusses two units: 1. Special Active Filters - This unit discusses various filter circuits including Sallen-Key, Butterworth, Chebyshev filters and their design specifications. It provides examples of designing filters to meet given band pass/low pass specifications. 2. Multivibrators - This unit discusses different types of multivibrators including monostable, astable, bistable circuits. It provides examples of deriving expressions for gate width of emitter-coupled and collector-coupled monostable and astable multivibrators. Design of circuits like binary and astable multivibrators with given specifications is also covered.

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67 views

UNIT-V - Special Active Filters 2 Marks Questions:: Que 6.15, Sol. in Notes, End Sem Question 2016

The document discusses two units: 1. Special Active Filters - This unit discusses various filter circuits including Sallen-Key, Butterworth, Chebyshev filters and their design specifications. It provides examples of designing filters to meet given band pass/low pass specifications. 2. Multivibrators - This unit discusses different types of multivibrators including monostable, astable, bistable circuits. It provides examples of deriving expressions for gate width of emitter-coupled and collector-coupled monostable and astable multivibrators. Design of circuits like binary and astable multivibrators with given specifications is also covered.

Uploaded by

ShubhangBaghel
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Electronic Circuit Design, VI Semester, Jan-June 2017

UNIT- V- Special Active Filters

2 Marks Questions:

1. Explain RC-CR Transformation.


2. Define Bode sentivity.
3. Compare Butterworth and Chebyshev approximation.

7 Marks:

1. Draw the Sallen and Key circuit and its transfer function. Also explain its design case 1,2 & 3.

2. It is required to design an LPF, only one op-amp is available and 0.1F capacitors are available.
Design a filter to meet following specifications: (Que 6.15, sol. in notes, End Sem Question 2016)
(a). The response is to be Butterworth.
(b). Find maximum value of order.
(c). The half power frequency is to be2000 rad/sec.
(d). In addition to filtering action, we wish a low frequency gain of 14 dB.

3. Define Bode Sensitivity. Find the sensitivity of Sallen and Key Circuit.

4. Draw the circuit diagram for Delyiannis Friends circuit and derive the expression for design
parameter.

5. Consider the Sallen Key low pass circuit with following choice made for the design of fixed
elements: K=2, R1C1= R2C2=1 & C1=1. Determine design equation which express the value of R1,
R2 & C2 in terms of o and Q.

6. Consider the following three sets of specifications:


(max, min, p and s values are given ) (Que. 6.4 & 6.5, Solution in notes)

For each of the three cases, do the following:

1) Determine n, the required order of the Butterworth low pass filter.


2) Determine the half power frequency, 0.
3) Determine the actual attenuation at the edge of the pass band and the edge of the stop band, (p)
and (s).
4) Determine the attenuation at the frequencies 2 x s and 10 x s.
7. Design a filter to satisfy the band pass specification shown in figure. Adjust the gain of the filter
such that (707) = 0 dB and use only 0.1 F capacitors in your realization. (Solution given in
notes, Que 7.8)

8. For a 5th order Butterworth Response. Determine the pole locations& also calculate the value of
Qfor the poles. (Solution given in notes).

9. Explain Geffe Algorithm.

10. The following specifications are given for a chebyshev low pass filter:
p=1 rad/sec, s=2.33rad/sec, max=0.5dB & min=22dB. Design a filter. (Solution given in notes)

11. Design a band pass filter having following attenuation characteristics: min=30dB, max=0.5dB. the
response should be chebyshev in pass band i.e. from 500 to 1000 rad/sec. Make use of 0.1F
capacitors only. (Solution given in notes)

UNIT 2: MULTIVIBRATORS

2 Marks:

1. What are the uses of commutating capacitors. What are the other names for commutating
capacitors.
2. What are collector catching diodes.
3. Define Bistable, Astable & Monostable multivibrators.
4. What do you mean by transition time, settling time and resolution time.
5. Define stable and quasi stable states.
7 Marks:

6. Explain Emitter-Coupled monostable multivibrator and derive an expression for gate width.

7. Explain collector-Coupled monostable multivibrator and derive an expression for gate width.

8. Explain Emitter-Coupled Astable multivibrator and derive an expression for gate width.

9. Explain collector-Coupled Astable multivibrator and derive an expression for gate width.

10. The fixed bias binary shown in figure uses n-p-n silicon transistors with VCE(sat)=0.5 V,
VBE(sat)=1 V, ICBO=10 nA at 25C and zero base to emitter voltage at cut-off. The circuit
parameters are VCC = VBB = 6 V, RC= 1.2 K, R1 = 4.7 K, R2= 27 K. Find
(a). hFE(min) and stable state voltages and currents.
(b). If the reverse saturation current doubles for every 10C rise in temperature, what is the
maximum temperature at which the circuit can operate properly with one device remaining
OFF.

11.
11. Silicon n-p-n transistors with hFE(min)=40 are available. Design an astable multivibrator to generate
a square wave of 1 kHz frequency with a duty cycle of 25%.

12. Silicon n-p-n transistors with hFE(min)=20 are available. If VCC=VBB=10V, Design Bistable
multivibrator.

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