AP4511GM

Pb Free Plating Product

Advanced Power N AND P-CHANNEL ENHANCEMENT

Electronics Corp. MODE POWER MOSFET

Simple Drive Requirement D2 N-CH BVDSS 35V

D2
D2
Low On-resistance D1 D2 RDS(ON) 25m
D1 D1
D1
Fast Switching Performance ID 7A
G2
G2
S2 P-CH BVDSS -35V
G1 S2
SO-8 S1 G1
SO-8 S1 RDS(ON) 40m
Description ID -6.1A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
D1 D2
ruggedized device design, low on-resistance and cost-
effectiveness.

The SO-8 package is universally preferred for all commercial- G1 G2

industrial surface mount applications and suited for low voltage

S1 S2
applications such as DC/DC converters.

Absolute Maximum Ratings

Symbol Parameter Rating Units
N-channel P-channel
VDS Drain-Source Voltage 35 -35 V
VGS Gate-Source Voltage 20 20 V
3
ID@TA=25 Continuous Drain Current 7 -6.1 A
3
ID@TA=70 Continuous Drain Current 5.7 -5 A
1
IDM Pulsed Drain Current 30 -30 A
PD@TA=25 Total Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Thermal Resistance Junction-ambient Max. 62.5 /W

Data and specifications subject to change without notice 201122041

AP4511GM
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 35 - - V
BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.02 - V/
RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=7A - 18 25 m
VGS=4.5V, ID=5A - 29 37 m
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=7A - 9 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=35V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=28V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=20V - - 100 nA
2
Qg Total Gate Charge ID=7A - 11 18 nC
Qgs Gate-Source Charge VDS=28V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC
2
td(on) Turn-on Delay Time VDS=18V - 12 - ns
tr Rise Time ID=1A - 7 - ns
td(off) Turn-off Delay Time RG=3.3,VGS=10V - 22 - ns
tf Fall Time RD=18 - 6 - ns
Ciss Input Capacitance VGS=0V - 830 1330 pF
Coss Output Capacitance VDS=25V - 150 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF
Rg Gate Resistance f=1.0MHz - 1.2 1.8

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=1.7A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=7A, VGS=0V - 18 - ns
Qrr Reverse Recovery Charge dI/dt=100A/s - 12 - nC
 AP4511GM

P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -35 - - V
BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA - -0.02 - V/
2
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-6A - 32 40 m
VGS=-4.5V, ID=-4A - 50 60 m
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-6A - 9 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=-35V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=-28V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=20V - - 100 nA
2
Qg Total Gate Charge ID=-6A - 10 16 nC
Qgs Gate-Source Charge VDS=-28V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 6 - nC
2
td(on) Turn-on Delay Time VDS=-18V - 10 - ns
tr Rise Time ID=-1A - 6 - ns
td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 26 - ns
tf Fall Time RD=18 - 7 - ns
Ciss Input Capacitance VGS=0V - 690 1100 pF
Coss Output Capacitance VDS=-25V - 165 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF
Rg Gate Resistance f=1.0MHz - 5.2 7.8

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-1.7A, VGS=0V - - -1.2 V
2
trr Reverse Recovery Time IS=-6A, VGS=0V - 20 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/s - 12 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 /W when mounted on Min. copper pad.
AP4511GM
N-Channel
50 50

T A = 25 o C 10V
10V T A = 150 o C 7.0V
40
7.0V 40
5.0V 5.0V

ID , Drain Current (A)

ID , Drain Current (A)

30 30
4.5V

20 20 4.5V

10 V G =3.0V 10 V G =3.0V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

40 1.8

ID=5A 1.6 ID=7A

T A =25 o C V G =10V
35
Normalized RDS(ON)

1.4
RDS(ON) (m )

30 1.2

1.0

25

0.8

20 0.6
2 4 6 8 10 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
6 1.5

5
1.3
Normalized VGS(th) (V)

1.1
T j =150 o C T j =25 o C
IS(A)

0.9

0.7
1

0 0.5
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature
 AP4511GM
N-Channel
f=1.0MHz
14 1000

C iss
I D =7A
VGS , Gate to Source Voltage (V)

12
V DS =28V
10

8 C oss

C (pF)
100
C rss
6

0 10
0 5 10 15 20 25 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthja)

Duty factor=0.5

0.2
10
10us 0.1
0.1

0.05
1ms
ID (A)

1 0.02

10ms
0.01
PDM
t
100ms 0.01
Single Pulse
T
0.1 o
T A =25 C
1s Duty factor = t/T
Single Pulse Peak Tj = PDM x Rthja + Ta
Rthja =135o C/W
DC
0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

30

V DS =5V
VG
ID , Drain Current (A)

T j =25 o C T j =150 o C QG
20
4.5V

QGS QGD

10

Charge Q
0
0 2 4 6 8

V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

AP4511GM
P-Channel
50 50

-10V -10V
o
T A = 25 C -7.0V T A = 150 o C -7.0V
40 40

-5.0V
-ID , Drain Current (A)

-ID , Drain Current (A)

30
-4.5V 30 -5.0V

-4.5V
20 20

V G = - 3.0V V G = - 3.0V
10 10

0 0
0 1 2 3 4 5 0 1 2 3 4 5

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

60 1.4

I D = -4 A I D =-6A
55
T A =25 o C V G =-10V
1.2
RDS(ON) (m )

Normalized R DS(ON)

50

45 1.0

40

0.8

35

30 0.6
3 5 7 9 11 -50 0 50 100 150

-V GS ,Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
6 1.5

5
Normalized -VGS(th) (V)

1.3

1.1

T j =150 o C T j =25 o C
-IS(A)

0.9

0.7
1

0 0.5
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature
 AP4511GM
P-Channel
f=1.0MHz
14 10000

12
I D = -6 A
-VGS , Gate to Source Voltage (V)

V DS = - 28V
10

C (pF)
8

1000 C iss
6

C oss
2

C rss
0 100
0 5 10 15 20 25 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthja)

Duty factor=0.5

100us 0.2
10

0.1
0.1
1ms
0.05
-ID (A)

1
10ms
0.02

0.01
100ms PDM
0.01
t
Single Pulse
0.1 o 1s T
T c =25 C
Duty factor = t/T
Single Pulse Peak Tj = PDM x Rthja + Ta
DC Rthja=135oC/W

0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

30

V DS =-5V VG

T j =25 o C T j =150 o C QG
-ID , Drain Current (A)

20

-4.5V
QGS QGD

10

Charge Q
0
0 2 4 6 8

-V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform