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Experiment - 7: Electrical and Electronics

The document describes an experiment to study the characteristics of a PN junction diode under forward and reverse bias conditions. In forward bias, current flows as the applied voltage exceeds the barrier potential, allowing charge carriers to cross. In reverse bias, the depletion region widens and no current flows except for a small saturation current from thermally generated minority carriers. The procedure connects the diode in a circuit, varies the applied voltage, and records the corresponding voltage and current readings to plot the diode's I-V characteristics curve.

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Addhayan Dhiman
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64 views

Experiment - 7: Electrical and Electronics

The document describes an experiment to study the characteristics of a PN junction diode under forward and reverse bias conditions. In forward bias, current flows as the applied voltage exceeds the barrier potential, allowing charge carriers to cross. In reverse bias, the depletion region widens and no current flows except for a small saturation current from thermally generated minority carriers. The procedure connects the diode in a circuit, varies the applied voltage, and records the corresponding voltage and current readings to plot the diode's I-V characteristics curve.

Uploaded by

Addhayan Dhiman
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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ELECTRICAL AND ELECTRONICS

EXPERIMENT - 7
Aim: To study the PN junction diode characteristics under Forward & Reverse
bias conditions.

Components:
1. Diode
2. Resisters
3. Wires

Apparatus:
Voltmeter :
Ammeter :
R.P.S :

Theory:
A PN junction diode is a two terminal junction device. It conducts only in
one direction (only on forward biasing).
FORWARD BIAS:
On forward biasing, initially no current flows due to barrier potential. As
the applied potential exceeds the barrier potential the charge carriers gain
sufficient energy to cross the potential barrier and hence enter the other
region. The holes which are majority carriers in the P-region, become
minority carriers on entering the N-regions, and electrons, which are the
majority carriers in the N-region, become minority carriers on entering the
P-region. This injection of minority carriers results in the current flow,
opposite to the direction of electron movement.
REVERSE BIAS:
On reverse biasing, the majority charge carriers are attracted towards the
ELECTRICAL AND ELECTRONICS

terminals due to the applied potential resulting in the widening of the


depletion region. Since the charge carriers are pushed towards the
terminals no current flows in the device due to majority charge carriers.
There will be some current in the device due to the thermally generated
minority carriers. The generation of such carriers is independent of the
applied potential and hence the current is constant for all increasing
reverse potential. This current is referred to as Reverse Saturation
Current, IO, and it increases with temperature. When the applied reverse
voltage is increased beyond the certain limit, it results in breakdown.
During breakdown, the diode current increases tremendously.

Figure: I-V Characteristics of P-N Junction Diode

Procedure:
1) Connect the circuit as per the diagram.
2) Vary the applied voltage V in steps of 0.1V.
3) Note down the corresponding Ammeter readings If.
4) Note down the corresponding Voltmeter readings Vf.
ELECTRICAL AND ELECTRONICS

5) Plot a graph between Vf and If.

Circuit Diagram:

Observation Table:
Forward Biased Mode
Sr. Input Voltage Diode Voltage Ammeter
No. Vf current, If
ELECTRICAL AND ELECTRONICS

Reverse biased Mode


Sr. Input Voltage Diode Voltage Ammeter
No. Vf current, If

Conclusions:

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