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2sc3679 PDF

This document provides specifications for the 2SC3679 silicon NPN power transistor from Inchange Semiconductor. It is a high voltage switching transistor in a TO-3PN package for use in switching regulators and general power applications. Key specifications include maximum voltage and current ratings, electrical characteristics like gain and capacitance, and switching times. Physical dimensions and pin descriptions are also included.

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117 views4 pages

2sc3679 PDF

This document provides specifications for the 2SC3679 silicon NPN power transistor from Inchange Semiconductor. It is a high voltage switching transistor in a TO-3PN package for use in switching regulators and general power applications. Key specifications include maximum voltage and current ratings, electrical characteristics like gain and capacitance, and switching times. Physical dimensions and pin descriptions are also included.

Uploaded by

s2275646
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3679

DESCRIPTION
With TO-3PN package
High voltage switching transistor

APPLICATIONS
For switching regulator and
general purpose applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

T O R
UC
Absolute maximum ratings (Ta=25)



OND
SYMBOL PARAMETER CONDITIONS VALUE UNIT

M I C
E SE
VCBO Collector-base voltage Open emitter 900 V

A NG
H
VCEO Collector-emitter voltage Open base 800 V

VEBO
INC
Emitter-base voltage Open collector 7 V

IC Collector current (DC) 5 A

ICM Collector current -peak 10 A

IB Base current (DC) 2.5 A

PC Collector power dissipation TC=25 100 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3679

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 800 V

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.5 V

VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.2 V

ICBO Collector cut-off current VCB=800V ;IE=0 0.1 mA

IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA

hFE DC current gain IC=2A ; VCE=4V 10 30

fT Transition frequency IC=0.5A ; VCE=12V 6 MHz

T O R
D UC

COB Collector output capacitance f=1MHz;VCB=10V 75 pF

IC ON
S EM
Switching times

NG E
CHA
ton Turn-on time 1.0 s

ts IN
Storage time
IC=2.0A
IB1=0.3A ,IB2=-1A
VCC=250V, RL=125
5.0 s

tf Fall time 1.0 s

2
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3679

PACKAGE OUTLINE

T O R
D UC
N
EM IC O
E S
H A NG
IN C
Fig.2 outline dimentions (unindicated tolerance:0.10 mm)

3
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3679

T O R
DUC
N
EM IC O
E S
H A NG
IN C

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