MPSH11 / MMBTH11

Discrete POWER & Signal

Technologies

MPSH11 MMBTH11

E
C TO-92
BE B
SOT-23
Mark: 3G

NPN RF Transistor
This device is designed for common-emitter low noise amplifier
and mixer applications with collector currents in the 100 A to
10 mA range to 300 MHz, and low frequency drift common-base
VHF oscillator applications with high output levels for driving
FET mixers. Sourced from Process 47.

Absolute Maximum Ratings* TA = 25C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 25 V
VCBO Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 3.0 V
IC Collector Current - Continuous 50 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25C unless otherwise noted

Symbol Characteristic Max Units

MPSH11 *MMBTH11
PD Total Device Dissipation 350 225 mW
Derate above 25C 2.8 1.8 mW/C
RJC Thermal Resistance, Junction to Case 125 C/W
RJA Thermal Resistance, Junction to Ambient 357 556 C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

 MPSH11 / MMBTH11
NPN RF Transistor
(continued)

Electrical Characteristics TA = 25C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Sustaining Voltage* I C = 1.0 mA, IB = 0 25 V
V(BR)CBO Collector-Base Breakdown Voltage I C = 100 A, I E = 0 30 V
V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 A, I C = 0 3.0 V
ICBO Collector Cutoff Current VCB = 25 V, IE = 0 100 nA
IEBO Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 nA

ON CHARACTERISTICS
hFE DC Current Gain I C = 4.0 mA, VCE = 10 V 60
VCE(sat ) Collector-Emitter Saturation Voltage I C = 4.0 mA, IB = 0.4 mA 0.5 V
VBE( on) Base-Emitter On Voltage I C = 4.0 mA, VCE = 10 V 0.95 V

SMALL SIGNAL CHARACTERISTICS

fT Current Gain - Bandwidth Product I C = 4.0 mA, VCE = 10 V, 650 MHz
f = 100 MHz
Ccb Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.7 pF
Crb Common-Base Feedback Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.6 0.9 pF
rbCc Collector Base Time Constant I C = 4.0 mA, VCB = 10 V, 9.0 pS
f = 31.8 MHz
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

DC Typical Characteristics

DC Current Gain Collector-Emitter Saturation

VCESAT- COLLECTOR-EMITTER VOLTAGE (V)

vs Collector Current Voltage vs Collector Current

h FE - DC PULSED CURRENT GAIN

300 0.2
VCE = 5V
= 10
250
125 C 0.15
200 125 C

150 25 C
0.1
25 C
100
- 40 C
0.05
50
- 40 C
0
0.01 0.1 1 10 100 0.1 1 10 20 30
I C- COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)
P 4 P4
 MPSH11 / MMBTH11
NPN RF Transistor
(continued)

DC Typical Characteristics (continued)

Base-Emitter Saturation Base-Emitter ON Voltage vs

Collector Current

VBE(ON)- BASE-EMITTER ON VOLTAGE (V)

Voltage vs Collector Current
VBESAT- BASE-EMITTER VOLTAGE (V)

1
1

0.8 - 40 C
- 40 C
25 C 0.8

0.6 125 C 25 C
0.6

0.4 = 10 125 C
0.4 V CE = 5V
0.2
0.2
0.1 1 10 20 30 0.01 0.1 1 10 100
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)
P 47 P4

Collector-Cutoff Current
vs Ambient Temperature
ICBO- COLLECTOR CURRENT (nA)

10
VCB= 30V

0.1

25 50 75 100 125 150

T A - AMBIENT TEMPERATURE ( C)
P4

AC Typical Characteristics

Capacitance vs. Contours of Constant Gain

Reverse Bias Voltage Bandwidth Product (fT)
 MPSH11 / MMBTH11
NPN RF Transistor
(continued)

Common Emitter Y Parameters

Input Admittance vs. Input Admittance vs.

Collector Current Collector Current

Input Admittance vs.

Collector Voltage Input Admittance vs. Frequency

Forward Transfer Admittance Forward Transfer Admittance

vs. Collector Current vs. Collector Current
 MPSH11 / MMBTH11
NPN RF Transistor
(continued)

Common Emitter Y Parameters (continued)

Forward Transfer Admittance Forward Transfer Admittance

vs. Collector Voltage vs. Frequency

Reverse Transfer Admittance Reverse Transfer Admittance

vs. Collector Current vs. Collector Current

Reverse Transfer Admittance Reverse Transfer Admittance

vs. Collector Voltage vs. Frequency
 MPSH11 / MMBTH11
NPN RF Transistor
(continued)

Common Emitter Y Parameters (continued)

Output Admittance vs. Output Admittance vs.

Collector Current Collector Current

Output Admittance vs.

Collector Voltage Output Admittance vs. Frequency

Power Gain and Noise Figure Conversion Gain

vs. Collector Current vs. Collector Current
 MPSH11 / MMBTH11
NPN RF Transistor
(continued)

AC Typical Characteristics

POWER DISSIPATION vs
AMBIENT TEMPERATURE
350

P D - POWER DISSIPATION (mW)

300

250 TO-92
200
SOT-23
150

100

50

0
0 25 50 75 100 125 150
TEMPERATURE ( C)

Test Circuits

VCC = 12 V

270

1000 pF

1000 pF
200 mHz Output
L2 into 50

RL

100 pF RS
200 mHz
Input
0.8-10 pF

L1
1000 pF

1000 pF 390

L1 - Ohmite Z-235 RFC

2.2 K L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID
tapped 1 1/2 turns from cold side

VBB

FIGURE 1: Unneutralized 200 MHz PG NF Test Circuit

 MPSH11 / MMBTH11
NPN RF Transistor
(continued)

Test Circuits (continued)

T1

4.0-30 pF 50
0.002 F
Output
50
2K
Input

2.2 K
1/2 W

1000 pF
1000 pF
1000 pF
390
1/2 W 270
1/2 W

R.F. Beads

VCC = 12 V
T1 - Q3 Toroid 4:1 ratio
8 turns Pri. 2 turns Sec. } No. 22 wire

VAGC

FIGURE 2: 45 MHz Power Gain Circuit

200 mHz Output

into 50 T1
300 pF
RFin
1.1 pF 20pF 45 mHz Output
into 50
2.0 pF
LOin L1

245 mHz
Output into 1000 pF
50
1000 pF

47 K

L1 - Ohmite RFC Z235

T1 - Primary 5 turns No. 34 wire 1/4 inch
diameter. Secondary runs No. 34 wire closer
VBB VCE wound over a Q100 core (10.7 mHz). When
terminated onm secondary side with 50
VCE = 15 V primary measures 1.5 K, -25 pF.

FIGURE 3: 200 MHz Conversion Gain Test Circuit