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2 SK 30 A

This document summarizes the specifications and characteristics of the LH03 Series Silicon N-Channel Junction FET. The FET can be used for applications like charge sensors, meter amplifiers, rheostats, choppers, and gain controllers. It has maximum ratings for gate voltages, current, power dissipation and temperature. Electrical characteristics include drain-source cut-off current, gate leakage current, gate voltages, and input/reverse transfer capacitances. The FETs are classified by drain-source cut-off current into four ranks indicated by marking symbols on the package.

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Nacho Consolani
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570 views1 page

2 SK 30 A

This document summarizes the specifications and characteristics of the LH03 Series Silicon N-Channel Junction FET. The FET can be used for applications like charge sensors, meter amplifiers, rheostats, choppers, and gain controllers. It has maximum ratings for gate voltages, current, power dissipation and temperature. Electrical characteristics include drain-source cut-off current, gate leakage current, gate voltages, and input/reverse transfer capacitances. The FETs are classified by drain-source cut-off current into four ranks indicated by marking symbols on the package.

Uploaded by

Nacho Consolani
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Silicon Junction FETs XIAOSHENG

Symbol:
Drain
LH03 Series of Products interconvert:

www.datasheet4u.com
2SK30A Gate
Source

Silicon N-Chinnel Junction FET


Package example:
Application:
For charge sensor, meter amplifier circuit, rheostat , chopper and
gain controller for AGC electronic switch.

Absolute Maximum Ratings (Ta=25)


Parameter Symbol Ratings Unit
Gate to Drain voltage VGDO -50 V Package D S G
Gate to Source voltage VGSO -50 V SC-59
Gate current IG 10 mA SOT-23

Allowable power dissipation TO-92S


PD 250 mW
Junction Temperature Tj 125 * TO-92 3 1 2
Storage Temperature TO-18
Tstg -55 to +125

Electrical Characteristics (Ta=25)


Prameter Symbol Conditions min typ max Unit
Drain to Source cut-off current IDSS VDS = 10V, VGS = 0V 0.3 6.5 mA
Gate to Source leakage current IGSS VGS= -30V, VDS = 0V -1.0 nA
Gate to Drain voltage VGDS IG = -100AVDS = 0V -50 V
Gate to Source cut-off voltage VGS(OFF) VDS = 10V, ID = 0.1A -0.4 -5.0 V
Forward transfer admittamce | Yfs | VDS= 10VVGS= 0Vf = 1KHZ 1.2 mS
Input capacitance (Common Source) Ciss 8.2 pF
VDS= 10VVGS= 0Vf = 1MHZ
Reverse transfer capacitance (Common Source) Crss 2.6 pF

IDSS Rank Classification


Runk R O Y GR
IDSS(mA) 0.3 to 0.75 0.6 to 1.4 1.2 to 3.0 2.6 to 6.5
Marking Symbol 035D 035E 035F 035G

Xiaosheng Electronic & Telechnology CO. ,LTD.


Tel: 86-021-64859219 Fax: 86-021-64859219 www.on-ele.org Email:[email protected]
Room 206 3rd building 195-16 Tianlin RD. Shanghai China

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