Selection guide - Mar.

2017

Image Sensors
Various types of image sensors covering a wide spectral response range for photometry

HAMAMATSU PHOTONICS K.K.

Image sensors
Various types of image sensors
covering a wide spectral
response range for photometry

H A M A M AT S U d e v e l o p s a n d p r o d u c e s a d -
vanced image sensors for measurement appli-
cations in spectral and energy ranges includ-
ing infrared, visible, ultraviolet, vacuum ultra-
violet, soft X-rays and hard X-rays. We provide
a full lineup of image sensors to precisely
match the wavelength of interest and applica-
tion. HAMAMATSU complies with customer
needs such as for different window materials,
filters or fiber couplings. We also offer easy-
to-use driver circuits for device evaluation and
sensor/driver modules for OEM applications
as well as multichannel detector heads.

Contents
Lineup of image sensors ••••••••••••••••••••
1

Image sensor technology of

Hamamatsu ••••••••••••••••••••••••••••••••••••••••••••••••••••••••
5

Area image sensors ••••••••••••••••••••••••••••••••••

7

Back-thinned type CCD area

image sensors ••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••
7

Front-illuminated type CCD area

image sensors •••••••••••••••••••••••••••••••••••••••••••••••••••••••••
13
 Image sensor

CMOS area image sensors •••••••••••••••••••••••••••••

15 CCD linear image sensors X-ray image sensors ••••••••••••••••••••••••••••••
34
for industry ••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••
24
Linear image sensors •••••••••••••••••••••••••••
16 X-ray flat panel sensors •••••••••••••••••••••
38
CMOS linear image sensors
CMOS linear image sensors for for industry 26
Related products for image
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spectrophotometry 17
sensors 40
••••••••••••••••••••••••••••••••••••••••••••••

•••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••

Photodiode arrays with amplifier •••••

28
CCD linear image sensors for
Multichannel detector heads ••••••••••••••••••••••••••
40
spectrophotometry ••••••••••••••••••••••••••••••••••••••••••••••
20 Distance image sensors ••••••••••••••••••••••••••
29
Driver circuits for image sensors •••••••••••••••••
43
NMOS linear image sensors for
Image sensors for near infrared
spectrophotometry ••••••••••••••••••••••••••••••••••••••••••••••
22
region 30
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 Lineup of image sensors
Product name Feature Lineup Page

Area image sensors

• For spectrophotometry
• For spectrophotometry (High
resolution type)
• For spectrophotometry (Low
etaloning type)
Back-thinned type CCD area CCD area image sensors delivering high quantum • For spectrophotometry (IR- 7 to 12
image sensors efficiency from visible to VUV region enhanced type)
• For spectrophotometry (Large full
well type)
• For ICP spectrophotometry
• For scientific measurement
• Fully-depleted type
Low dark current and low noise CCD area image • For spectrophotometry
Front-illuminated type CCD sensors are ideal for scientific measurement • For scientific measurement 13, 14
area image sensors instruments.

These are APS type CMOS area image sensors • SXGA format
CMOS area image sensors 15
with high sensitivity in the near infrared region. • VGA format

Linear image sensors

CMOS linear image sensors C M O S l i n e a r i m a g e s e n s o r s s u i t a b l e f o r •• High sensitivity type

Variable integration time type 17 to 19
for spectrophotometry spectrophotometry • Standard type
The back-thinned type CCD linear image sensors
are developed for spec trophotometers and
CCD linear image sensors for feature high UV sensitivit y and an internal
electronic shutter. • Back-thinned type
spectrophotometry 20, 21
The front-illuminated type offers high sensitivity • Front-illuminated type
in the ultraviolet region (200 nm) nearly equal to
back-thinned CCD, despite a front-illuminated CCD.

sensors with high UV sensitivity and •• Current output type

Current output type (Standard type)
NMOS linear image sensors Image
excellent output linearity, making them ideal 22, 23
for spectrophotometry (Infrared enhanced type)
for precision photometry • Voltage output type

CCD linear image sensors for CCD linear image sensors suitable for industry • TDI-CCD image sensor 24, 25
industry • Front-illuminated type

CMOS linear image sensors incorporate a timing • Resin-sealed type package

CMOS linear image sensors circuit and signal processing amplifiers integrated • High-speed readout type
for industry on the same chip, and operate from simple input • High sensitivity type 26, 27
pulses and a single power supply. Thus the • Digital output type
external circuit can be simplified.

Photodiode arrays with amplifier

Sensors combining a Si photodiode array and a
Photodiode arrays with signal processing IC. A long and narrow image • Long and narrow area type 28
amplifier sensor can also be configured by arranging
multiple arrays in a row.

Distance image sensors

These distance image sensors are designed to
measure the distance to an object by TOF method.
When used in combination with a pulse modulated • Distance linear image sensor
Distance image sensors 29
light source, these sensors output phase difference • Distance area image sensor
information on the timing that the light is emitted
and received.

Image sensors for near infrared region

• For NIR spectrometry
InGaAs linear image sensors • High-speed type 31, 32
• Back-illuminated type
Image sensors for near infrared region. Built-
in CMOS IC allows easy operation.
• Thermal imaging monitor
InGaAs area image sensors • For near infrared image 33
detection

1 Image sensors
 Product name Feature Lineup Page

X-ray image sensors

• CCD/CMOS area image
CCD area image sensors Image sensors and photodiode arrays deliver sensors for X-ray radiography
CMOS area image sensors high qualit y X-ray images by coupling FOS • TDI-CCD area image sensors 34 to 37
Photodiode arrays with (fiber optic plate coated with X-ray scintillator) • Photodiode arrays with
amplifier and phosphor sheet. amplifier for non-destructive
inspection

X-ray flat panel sensors

• For radiography (rotational
Digital X-ray image sensors developed for • type)
real-time X-ray imaging applications requiring For radiography (biochemical
X-ray flat panel sensors 38, 39
imaging)
high sensitivity and high image quality • General type (off-line)
• Low noise type

Related products for image sensors

• For front-illuminated type CCD
area image sensors
• For back-thinned type CCD
Mul tic hann e l d e t e c tor h e a d s d e s ign e d a s • area image sensors
For NMOS linear image
Multichannel detector heads easy-to-use driver circuits for various types of sensors 40 to 42
image sensors • For InGaAs linear image
sensors
• For InGaAs area image
sensors
• For CCD image sensors
• For NMOS linear image
Driver circuits designed for various image • sensors (Current output type)
Driver circuits for image For CMOS linear image 43, 44
sensors sensors sensors
• For InGaAs linear image
sensors

Example of detectable light level

High sensitivity film (ISO 1000)

InGaAs linear image sensor

(G9201/G9211 series)

NMOS/CMOS linear image sensor

(S3901/S8377 series)

Non-cooled type CCD area image sensor

(Large full well type: S7033 series)

Non-cooled type CCD area image sensor

(S9970/S7030 series)

Cooled type CCD area image sensor

(S9971/S7031 series)

10-14 10-12 10-10 10-8 10-6 10-4 10-2

Irradiance (W/cm2)
Illuminance (lx)
10-8 10-6 10-4 10-2 100 102 104
KMPDC0106ED

Image sensors 2
 Image sensor

Hamamatsu Photonics uses its original silicon/compound semiconductor process technology to manufacture image sensors that cover a
wide energy and spectral range from 2.6 μm near infrared region to visible, UV, vacuum UV (VUV), soft X-ray, and even hard X-ray region.
In addition, we also provide module products designed to work as driver circuits for various image sensors.

Si process Compound
technology semiconductor
process technology
• CCD
• CMOS • In G aAs

MEMS technology

• Back-illuminated type
• Three-dimensional mounting
[fine pitch bump bonding,
TSV (through silicon via)]

Spectral response

CCD area image sensor (without window) CMOS linear image sensor
(Typ. Ta=25 °C) (Ta=25 ˚C)
100 0.4
S7030/S7031 S10121 to
90 series, etc. S10124 series (-01)
S11510 series
80
0.3
Quantum efficiency (%)

Photosensitivity (A/W)

70

60 S10420-01
series S8377/
50 0.2 S8378 series

40

30
S9970/S9971 0.1
20 series
10 S9972/S9973
series
0 0
200 400 600 800 1000 1200 200 400 600 800 1000 1200

Wavelength (nm) Wavelength (nm)

KMPDB0251EE KMPDB0252EG

3 Image sensors
 Example of detectable energy level and spectral response range

Hamamatsu develops and produces image sensors that cover a spectral range from 2.6 μm near infrared region to visible, UV, vacuum UV
(VUV), soft X-ray, and even hard X-ray region of hundred and several tens of keV.

InGaAs linear
image sensor
(Long wavelength type)

InGaAs
linear/area
image sensor

Distance
1240 image sensor
Wavelength [nm] =
Photon energy [eV]
CMOS area
image sensor

CMOS linear
image sensor

NMOS image sensor NMOS

(windowless type) image sensor

Back-thinned CCD

Back-thinned CCD (windowless type)

For X-ray imaging CCD Front-illuminated CCD (windowless type) Front-

il uminated CCD
X-ray flat panel sensor

1 MeV 100 keV 10 keV 1 keV 100 eV 10 eV 1 eV 0.1 eV

Photon energy

Wavelength
0.01 nm 0.1 nm 1 nm 10 nm 100 nm 1 μm 10 μm
KMPDC0105EH

Note) If using an NMOS linear image sensor (windowless type) for X-ray direct detection, please consult our sales office regarding usage conditions.

NMOS linear image sensor InGaAs linear image sensor

(Typ. Ta=25 ˚C) (Typ. Ta=25 °C)

0.4 1.5
S8380/S8381 series Td=25 °C
(infrared enhanced type) Td=-10 °C G9206-256W G9207-256W
Td=-20 °C G9208-256W
G9205-256W
0.3 G9201 to G9204/
Photosensitivity (A/W)
Photosensitivity (A/W)

G9211 to G9214/
1.0 G9494 series

G11135 series
0.2 G11620 series
G11608
series
0.5

0.1
S3901/S3904 series

0 0
200 400 600 800 1000 1200 0.5 1.0 1.5 2.0 2.5 3.0

Wavelength (nm) Wavelength (μm)

KMPDB0161ED KMIRB0068EE

Image sensors 4
 Image sensor technology of Hamamatsu

CMOS technology

Hamamatsu produces CMOS image sensors that use its uniquely developed analog CMOS technology at their cores for applications
mainly aimed at measuring equipment such as analytical instruments and medical equipment. With analog and digital features that
meet market needs built into the same chip as the sensor, systems can be designed with high performance, multi-functionality, and
low cost.
· Supports photosensitive areas of various shapes (silicon/compound semiconductor, one- and two-dimensional array, large area)
· Highly functional (high-speed or partial readout, built-in A/D converter, global shutter, etc.)
· Customization for specific applications

Example of high functionality based on CMOS technology

Distance image sensor

This image sensor can detect distance information for the target object using the TOF (time-of-flight) method. A distance
measurement system can be configured by combining a pulse-modulated light source and a signal processing section.

Example of distance measurement diagram

Drive pulse
Irradiation light

Light source
(LED array or LED)

Evaluation
kit
Ethernet

Reflected light Target

PC Distance (man, object)
image Light receiving
sensor lens
Distance image (distance information + image) example
KMPDC0417EB
(near→middle→far: red→yellow→green)

Compact thin COB (chip on board) package technology

Small mount area can be achieved by mounting the CMOS

image sensor chip on a compact thin COB package that is
about the same size. In a COB package, the chip is sealed
in a resin mold, which provides high reliability and ease of
use. CMOS image sensors that employ this technology can
be used in a wide range of applications. They contribute to
cost reduction, size reduction, and high-volume production
of equipment. This technology makes our single 3.3 V power
supply operated, low power consumption, high sensitivity
CMOS image sensors even more easier to use.

5 Image sensors
 Near infrared-enhanced CMOS area image sensor

Our unique photosensitive area technology provides high sensitivity in the near infrared region.

Spectral response (typical example) Imaging example of finger veins using near infrared-
(Ta=25 °C)
enhanced CMOS area image sensor
5 × 1013

4 × 1013
Photosensitivity [V/(W∙s)]

3 × 1013

2 × 1013

1 × 1013

0
400 500 600 700 800 900 1000 1100 1200

Wavelength (nm)
KMPDB0363ED

Hybrid technology (Three-dimensional mounting)

InGaAs image sensors for near infrared region employ a Schematic diagram of InGaAs area image sensor using
hybrid structure in which the photodiode array used as the fine-pitch bumps
photosensitive area and the CMOS signal processing circuit
are implemented in separate chips and mounted in three
dimensions using bumps. This is used when it is difficult to
make the photosensitive area and the signal processing circuit
monolithic. Moreover, this construction is advantageous in that
Back-illuminated
the shape of the photosensitive area, spectral response, and ROIC (Si) In bump InGaAs photodiode array

the like can easily be modified.

Front end board

KMIRC0036EB

Back-thinned technology

In general, CCDs are designed to receive light from the front side where circuit patterns are formed. This type of CCD is called
the front-illuminated CCD. The light input surface of front-illuminated CCDs is formed on the front surface of the silicon substrate
where a BPSG film, poly-silicon electrodes, and gate oxide film are deposited. Light entering the front surface is largely reflected
away and absorbed by those components. The quantum efficiency is therefore limited to approx. 40% at the highest in the visible
region, and there is no sensitivity in the ultraviolet region.
Back-thinned CCDs were developed to solve such problems. Back-thinned CCDs also have a BPSG film, poly-silicon electrodes, and gate
oxide film on the surface of the silicon substrate, but they receive light from the backside of the silicon substrate. Because of this structure,
back-thinned CCDs deliver high quantum efficiency over a wide spectral range. Besides having high sensitivity and low noise which are the
intrinsic features of CCDs, back-thinned CCDs are also sensitive to electron beams, soft X-rays, ultraviolet, visible, and near infrared region.

Schematic of CCDs

Back-thinned type Front-illuminated type

Poly-silicon electrode Incident light
BPSG film
Poly-silicon electrode
BPSG film
Gate oxide film

Potential well Gate oxide film

Silicon
Potential well
Accumulation layer
Silicon

Incident light
KMPDC0180EB
KMPDC0179EB
Image sensors 6
 Area image sensors
Hamamatsu CCD area image sensors have extremely low noise and can acquire image signals with high S/N. Hamamatsu CCD
area image sensors use an FFT-CCD that achieves a 100% fill factor and collects light with zero loss, making them ideal for high
precision measurement such as spectrophotometry. These CCD area image sensors are available in a front-illuminated type or a
back-thinned type. The front-illuminated type detects light from the front side where circuit patterns are formed, while the back-
thinned type detects light from the rear of the Si substrate. Both types are available in various pixel sizes and formats allowing you
to select the device that best meets your applications. The rear of the back-thinned type is thinned to form an ideal photosensitive
surface delivering higher quantum efficiency over a wide spectral range.
CMOS area image sensors are APS (active pixel sensor) type with high sensitivity in the near infrared region.

Back-thinned type CCD area

image sensors
Back-thinned type CCD area image sensors deliver high quan-
tum efficiency (90% or more at the peak wavelength) in spec-
tral range up to VUV region, and have great stability for UV
region. Moreover these also feature low noise and are therefore
ideal for low-light-level detection.

For spectrophotometry
Achieving high quantum efficiency (at peak 90% min.) and ideal for high accuracy spectrophotometry

Pixel size Number of Line rate*1 Dedicated driver

Type no. [µm (H) × µm (V)] effective pixels (lines/s) Cooling*2 Photo circuit*3
(P.40)

S7030-0906 512 × 58 418

S7030-0907 512 × 122 316

Non-cooled C7040

S7030-1006 1024 × 58 213

S7030-1007 1024 × 122 160

24 × 24

S7031-0906S 512 × 58 418

S7031-0907S 512 × 122 316

One-stage C7041
TE-cooled
S7031-1006S 1024 × 58 213

S7031-1007S 1024 × 122 160

*1: Full line binning (typ.)

*2: Two-stage TE-cooled type (S7032-1006/-1007) is available upon request (made-to-order product).
*3: Sold separately
Note: Windowless type is available upon request.
7 Image sensors
 For spectrophotometry (High resolution type)
CCD area image sensors having superior low noise performance. Low noise type [S10140/S10141 series (-01)] and high-speed type
(S13240/S13241 series) are available.

Type no. Pixel size Number of Line rate*4 Cooling*5 Photo Dedicated driver
[µm (H) × µm (V)] effective pixels (lines/s) circuit

S10140-1107-01 2048 × 122 107

S10140-1108-01 2048 × 250 80

S10140-1109-01 2048 × 506 40

Non-cooled -

S13240-1107 2048 × 122 921

S13240-1108 2048 × 250 539

S13240-1109 2048 × 506 203

12 × 12

S10141-1107S-01 2048 × 122 107

S10141-1108S-01 2048 × 250 80

S10141-1109S-01 2048 × 506 40

One-stage -
TE-cooled

S13241-1107S 2048 × 122 921

S13241-1108S 2048 × 250 539

S13241-1109S 2048 × 506 203

*4: Full line binning (typ.)

*5: Two-stage TE-cooled type [S10142 series (-01)] is available upon request (made-to-order product).
Note: Windowless type is available upon request.

Image sensors 8
 For spectrophotometry (Low etaloning type)
Two types consisting of a low noise type (S10420 series, S11850-1106) and high-speed type (S11071 series, S11851-1106) are
available with improved etaloning characteristics. The S11850/S11851-1106 have a thermoelectric cooler within the package to
minimize variations in the chip temperature during operation.

Pixel size Number of Line rate*1 Dedicated driver

Type no. [µm (H) × µm (V)] effective pixels (lines/s) Cooling Photo circuit*2
(P.43)

S10420-1004-01 1024 × 16 221

S10420-1006-01 1024 × 64 189

C11287
S10420-1104-01 2048 × 16 116

S10420-1106-01 2048 × 64 106

Non-cooled
S11071-1004 1024 × 16 1777
14 × 14
S11071-1006 1024 × 64 751
C11288
S11071-1104 2048 × 16 1303

S11071-1106 2048 × 64 651

S11850-1106 106 C11860

2048 × 64 One-stage
TE-cooled
S11851-1106 651 –

*1: Full line binning (typ.)

*2: Sold separately
Note: Windowless type is available upon request.

Improved etaloning characteristic

Etaloning is an interference phenomenon that occurs when Etaloning characteristic (typical example)
the light incident on a CCD repeatedly reflects between the (Ta=25 °C)
110
front and back surfaces of the CCD while being attenuated,
100
Etaloning-improved type
and causes alternately high and low sensitivity. When long-
90
wavelength light enters a back-thinned CCD, etaloning oc-
Relative sensitivity (%)

80
curs due to the relationship between the silicon substrate
thickness and the absorption length. The S10420/S11071 70
Previous type
series and S11850/S11851-1106 back-thinned CCDs have 60

achieved a significant improvement on etaloning by using a 50

unique structure that is unlikely to cause interference. 40

30

20

10
0
900 920 940 960 980 1000

Wavelength (nm)
KMPDB0284EB

9 Image sensors
 Area image sensors

For spectrophotometry (IR-enhanced type)

Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)

Pixel size Number of Line rate*3 Dedicated driver

Type no. [µm (H) × µm (V)] effective pixels (lines/s) Cooling Photo circuit*4
(P.40, 43)

S11500-1007 Non-cooled C7040

24 × 24 1024 × 122 160

S11501-1007S One-stage C7041

TE-cooled

S11510-1006 1024 × 64 189

Non-cooled C11287

S11510-1106 2048 × 64 106

14 × 14

S11511-1006 1024 × 64 189

One-stage C11860
TE-cooled
S11511-1106 2048 × 64 106

*3: Full line binning (typ.)

*4: Sold separately
Note: Windowless type is available upon request.

Enhanced IR sensitivity

These sensors have MEMS structures fabricated by our own Spectral response (without window)
unique laser processing technology. These sensors have (Typ. Ta=25 °C)
100
achieved very high sensitivity in the near infrared region at 90 IR-enhanced type
Back-thinned CCD
wavelengths longer than 800 nm. Utilizing high sensitiv-
80
ity characteristic in the near infrared region, these sensors
70
should find applications in Raman spectroscopy.
60
Back-thinned CCD
50

40

30

20

10 Front-illuminated CCD

0
200 400 600 800 1000 1200

Wavelength (nm)
KMPDB0329EA

Image sensors 10
 For spectrophotometry (Large full well type)
Wide dynamic range are achieved.

Pixel size Number of Line rate*1 Dedicated driver

Type no. [µm (H) × µm (V)] effective pixels (lines/s) Cooling Photo circuit*2
(P.40, 41)

S7033-0907 512 × 122 316

Non-cooled C7043
S7033-1007 1024 × 122 160
24 × 24
S7034-0907S 512 × 122 316
One-stage C7044
TE-cooled
S7034-1007S 1024 × 122 160

*1: Full line binning (typ.) *2: Sold separately

Note: Windowless type is available upon request.

For ICP spectrophotometry

These CCD area image sensors have a back-thinned structure that enables high sensitivity in the UV to visible region as well as
wide dynamic range, low dark current, and an anti-blooming function.

Type no. Pixel size Number of Frame rate*3 Cooling Photo Dedicated driver
[µm (H) × µm (V)] effective pixels (frames/s) circuit

S12071 24 × 24 1024 × 1024 Tap A: 0.1

Tap B: 1.5
One-stage –
TE-cooled
S12101 12 × 12 2048 × 2048 Tap A: 0.02
Tap B: 2.4

*3: Area scanning (typ.)

Note: Windowless type is available upon request.

For scientific measurement

Selectable from a lineup covering various types of high performance back-thinned CCD area image sensors such as high-speed
readout type and low noise type

Pixel size Number of Frame rate*4 Dedicated driver

Type no. [µm (H) × µm (V)] effective pixels (frames/s) Cooling*5 Photo circuit*6
(P.41)

S7170-0909 Non-cooled C7180

512 × 512 0.9
S7171-0909-01 One-stage C7181
TE-cooled

S9037-0902 512 × 4 16300

24 × 24 Non-cooled –
S9037-1002 1024 × 4 8100

S9038-0902S 512 × 4 16300 –

One-stage
TE-cooled
S9038-1002S 1024 × 4 8100 –

*4: Area scanning (typ.) excluding full line binning (max.) for S9037/S9038 series
*5: Two-stage TE-cooled type for S7170-0909 and S7171-0909-01 is available upon request (made-to-order product). *6: Sold separately
Note: Windowless type is available upon request.

11 Image sensors
 Area image sensors

Fully-depleted type
The S10747-0909 is a back-illuminated CCD area image sensor that delivers drastically improved near-infrared sensitivity by the wid-
ened depletion layer.

Pixel size Number of Thickness of Dedicated driver

Type no. [µm (H) × µm (V)] effective pixels depletion layer Cooling Photo circuit
(µm)

S10747-0909 24 × 24 512 × 512 200 Non-cooled –

Structure of fully-depleted back-illuminated CCD

In ordinary back-thinned CCDs, the silicon substrate is only a few dozen microns thick. This means that near-infrared light
is more likely to pass through the substrate (see Figure 1), thus resulting in a loss of quantum efficiency in infrared region.
Thickening the silicon substrate increases the quantum efficiency in the near-infrared region but also makes the resolution
worse since the generated charges diffuse into the neutral region unless a bias voltage is applied (see Figure 2). Fully-deplet-
ed back-illuminated CCDs use a thick silicon substrate that has no neutral region when a bias voltage is applied and therefore
deliver high quantum efficiency in the near-infrared region while maintaining a good resolution (see Figure 3). One drawback,
however, is that the dark current becomes large so that these devices must usually be cooled to about -70 °C during use.

Figure 1 Back-thinned CCD Figure 2 When no bias voltage is Figure 3 When a bias voltage is applied to thick
applied to thick silicon CCD
silicon (fully-depleted back-illuminated CCD)
CCD surface surface

Depletion
layer
CCD side
Charge
Depletion
diffusion
layer

Depletion Neutral
layer region

Photosensitive GND Photosensitive GND Photosensitive BIAS

surface surface surface
Blue light Near-infrared Blue light Near-infrared Blue light Near-infrared
light light light
KMPDC0332EA

Spectral response (without window)

(Typ. Ta=25 °C)

100

90

80
Quantum efficiency (%)

70

60
Back-thinned CCD
50

40

30 S10747-0909

20

10

0
200 400 600 800 1000 1200

Wavelength (nm)
KMPDB0313EA

Image sensors 12
 Front-illuminated type CCD
area image sensors
Front-illuminated type CCD area image sensors are low dark
current and low noise CCDs ideal for scientific measurement
instruments.

For spectrophotometry
CCD area image sensors specifically designed for spectrophotometry

Pixel size Number of Line rate * 1 Dedicated driver

Type no. [µm (H) × µm (V)] effective pixels (lines/s) Cooling Photo circuit * 2
(P.40)

S9970-0906 512 × 60 169

S9970-1006 1024 × 60 86

Non-cooled C7020

S9970-1007 1024 × 124 66

S9970-1008 1024 × 252 34

S9971-0906 512 × 60 169

S9971-1006 1024 × 60 86 C7021

24 × 24 One-stage
TE-cooled
S9971-1007 1024 × 124 66

S9971-1008 1024 × 252 34 C7025

S9972-1007 * 3 1024 × 124 66

Non-cooled C7020-02

S9972-1008 * 3 1024 × 252 34

S9973-1007 * 3 1024 × 124 66 C7021-02

One-stage
TE-cooled
S9973-1008 * 3 1024 × 252 34 C7025-02

*1: Full line binning (typ.)

*2: Sold separately
*3: Infrared enhanced type
Note: In case of ceramic package CCD (S9970/S9972 series), windowless, UV coat, and FOP coupling are available upon request (made-to-order product).
13 Image sensors
 Area image sensors

For scientific measurement

CCD area image sensors that deliver high accuracy measurement. Number of effective pixels of 512 × 512 and 1024 × 1024 are
ideal for acquiring two-dimensional imaging.

Type no. Pixel size Number of Frame rate *4 Cooling Package Photo Dedicated
[µm (H) × µm (V)] effective pixels (frames/s) driver circuit

S9736-01 Ceramic DIP

24 × 24 512 × 512 0.3

S9736-03 Plate type

S9737-01 Non-cooled Ceramic DIP –

12 × 12 1024 × 1024 0.09

S9737-03 Plate type

S9979 48 × 48 1536 × 128 9 Ceramic DIP

*4: Area scanning (typ.)

Note: In case of ceramic package CCD (S9736-01, S9737-01, S9979), windowless, UV coat, and FOP coupling are available upon request (made-to-order product).

Image sensors 14
 CMOS area image sensors

These are APS (active pixel sensor) type CMOS area image
sensors with high sensitivity in the near infrared region. They
include a timing generator, a bias generator, an amplifier and an
A/D converter, and offer all-digital I/O for easy handling.

Type no. Pixel size Number of Frame rate Package Photo Dedicated driver
[µm (H) × µm (V)] effective pixels (frames/s) circuit

S13101 1280 × 1024 146

7.4 × 7.4 Ceramic

S13102 640 × 480 78

Spectral response (typical example, S13101, S13102) Block diagram (S13101)

(Typ. Ta=25 °C)

1.2 × 1017
Vertical shift register Charge pump circuit
outA [2:0]
15 outB [2:0]
1.0 × 1017 Pixel control
outC [2:0]
Photosensitivity [DN/(W∙s)]

Photodiode array outD [2:0]

LVDS outE [2:0]
8.0 × 1016 Vsync
output
Hsync
Pclk
6.0 × 1016 CTR

4.0 × 1016 Column parallel ADC Serializer

2.0 × 1016
Horizontal shift register Bias circuit
Timing
0 generator
400 500 600 700 800 900 1000 1100 SPI
(Serial Peripheral Interface) MISO

Wavelength (nm)
KMPDB0488EA MCLK SCLK
All_reset CS
Pll_reset RSTB
MOSI
KMPDC0529EB

15 Image sensors
 Linear image sensors
CMOS linear image sensors are widely used in spectrophotometry
and industrial equipment. Innovations in CMOS technology have
increased the integrated circuit density making CMOS linear
image sensors easier to use and available in a compact package
and at a reasonable cost. All essential signal processing circuits
are formed on the sensor chip.
Back-thinned type CCD linear image sensors have high UV
sensitivity ideal for spectrophotometry. They also have low
noise, low dark current and wide dynamic range, allowing low-
light-level detection by making the integration time longer.
Front-illuminated type CCD linear image sensors offer high
sensitivity in the ultraviolet region nearly equal to back-thinned type.
NMOS linear image sensors feature large charge accumulation and high output linearity making them ideal for scientific
measurement instruments that require high accuracy. Output charge can be converted into voltage by an external readout circuit.
Both CMOS and NMOS linear image sensors are capable of handling a larger charge than CCD image sensors and so can be used
at higher light levels.

Equivalent circuits

CMOS linear image sensor (S9227-03) CCD linear image sensor (S11155/S11156-2048-02)

VISH VIG VSG VOG VRET VRD VOD VRG

Digital shift register Shift clock

Start Analog shift register Video
Timing generator

(2-phase)
Clock FDA
Video Transfer
gate

VSTG
Hold circuit

VREGH
VREGL

All reset
gate
All reset
drain

Vdd Vss
KMPDC0121EC Vss
KMPDC0352EA

NMOS linear image sensor (S3901 series)

Start st
Clock 1 Digital shift register End of scan
Clock 2
Active video
Active
photodiode

Saturation
control gate
Saturation
control drain Dummy video

Dummy diode

Vss
KMPDC0020EC

Image sensors 16
 CMOS linear image sensors
for spectrophotometry
These are CMOS linear image sensors suitable for spectropho-
tometry.

High sensitivity type

These are high sensitivity CMOS linear image sensors using a photosensitive area with vertically long pixels. Other features include
high sensitivity and high resistance in the UV region.

Pixel height Pixel pitch Line rate Dedicated driver

Type no. (µm) (µm) Number of pixels (lines/s) Photo circuit
(P.44)
S11639-01 14 2048 4672
200 C13015-01
S13496 7 4096 2387

Features of the S11639-01

High sensitivity in the UV to near infrared region Easy-to-operate
For the photosensitive area, a buried photodiode structure is It operates on a single 5 V power supply and two types of
employed to reduce the dark current and shot noise in the external clock pulses. Since the input terminal capacitance of
dark state. Moreover, the photosensitive area features highly the clock pin is 5 pF, the image sensor can easily be operated
sensitive vertically long pixels but with low image lag, based with a simple external circuit. The video output is positive
on our original photosensitive area formation technology. In polarity. This product generates a readout timing trigger signal,
addition, high sensitivity is also provided for UV light. which can be used to perform signal processing.

Spectral response (typical example) Output waveform of one pixel [f(CLK)=VR=10 MHz]

(Ta=25 °C)
100

CLK 5 V/div.
80 GND
Relative sensitivity (%)

Trig 5 V/div.
GND
60 2.6 V
(Saturation output voltage=2.0 V)

Video 0.6 V
40 (Output offset voltage)
1 V/div.
GND
20 ns/div.
20

0
200 300 400 500 600 700 800 900 1000

Wavelength (nm)
KMPDB0445EA

APS (active pixel sensor) type Electronic shutter, simultaneous charge integration for all pixels
This APS t ype image sensor consists of high-sensitivit y The image sensor incorporates an electronic shutter function
amplifiers arranged for each pixel. It provides a high charge-to- that can be used to control the start timing and length of the
voltage conversion efficiency of 25 μV/e-, which is higher than integration time in sync with an external clock pulse. The signals
that of CCDs. of all pixels are transferred to a hold capacity circuit where each
pixel is read out one by one.

17 Image sensors
 Linear image sensors

Variable integration time type

These current output type linear image sensors have a variable integration time function. The S10121 to S10124 series also have
high sensitivity and smoothly varying spectral response characteristics in UV region.
Dedicated driver
Type no. Pixel height Pixel pitch Number of pixels Line rate Photo circuit * 1
(mm) (µm) (lines/s) (P.44)

S10121-128Q-01 128 1923

S10121-256Q-01 2.5 256 969

S10121-512Q-01 512 486

50

S10122-128Q-01 128 3846

S10122-256Q-01 0.5 256 1938

S10122-512Q-01 512 972

C10808 series

S10123-256Q-01 256 1938

S10123-512Q-01 0.5 512 972

S10123-1024Q-01 1024 487

25

S10124-256Q-01 256 969

S10124-512Q-01 2.5 512 486

S10124-1024Q-01 1024 243

*1: Sold separately

Spectral response (typical example) Spectral response in UV region (typical example)

(Ta=25 °C) (Ta=25 °C)

0.4 0.12

S10121 to S10124 series (-01)

0.10
0.3
Photosensitivity (A/W)

Photosensitivity (A/W)

0.08

0.2 0.06

0.04 Convensional
products
0.1
0.02

0 0
200 400 600 800 1000 1200 200 220 240 260 280 300

Wavelength (nm) Wavelength (nm)

KMPDB0442EA KMPDB0443EA

Image sensors 18
 Standard type
CMOS linear image sensors with internal readout circuit
Dedicated driver
Type no. Pixel height Pixel pitch Number of pixels Line rate Photo circuit * 1
(µm) (µm) (lines/s) (P.44)

S8377-128Q 128 3846

S8377-256Q 50 256 1938

S8377-512Q 512 972

500 C9001

S8378-256Q 256 1938

S8378-512Q 25 512 972

S8378-1024Q 1024 487

S9226-03

125 7.8 1024 194 –

S9226-04

S9227-03

250 12.5 512 9434 –

S9227-04

*1: Sold separately

19 Image sensors
 Linear image sensors

CCD linear image sensors

for spectrophotometry
The back-thinned type CCD linear image sensors are developed
for spectrophotometers and feature high UV sensitivity and an
internal electronic shutter.
The front-illuminated type offers high sensitivity in the ultravio-
let region (200 nm) nearly equal to back-thinned CCD, despite a
front-illuminated CCD.

Back-thinned type
These are back-thinned CCD linear image sensors with an internal electronic shutter for spectrometers.
Line rate
Pixel size Number of effective Dedicated driver
Type no. (lines/s) Cooling Photo circuit * 2
[µm (H) × µm (V)] pixels (P.43)
Typ. Max.

S11155-2048-02 14 × 500
Non-cooled C11165-02
S11156-2048-02 14 × 1000
2048 × 1 2327 4633
S13255-2048-02 14 × 500
One-stage
TE-cooled
S13256-2048-02 14 × 1000

S11490 24 × 500 1024 × 1 10000 30000

Non-cooled
S11491 12 × 500 2048 × 1 30000 70000

*2: Sold separately

Note: Windowless type is available upon request.

Resistive gate structure

In ordinar y CCDs, one pixel contains Figure 1 Schematic diagram and potential Figure 2 Schematic diagram and potential
multiple electrodes and a signal charge of ordinary 2-phase CCD of resistive gate structure
is transferred by applying dif ferent
P1V P2V P1V P2V REGL REGH STG TG
clock pulses to those electrodes [Figure
1]. In resistive gate structures, a single Resistive gate
high - resistance electrode is formed
in the active area, and a signal charge N- N N- N N- N N- N P+ N N- N

is transferred by means of a potential P P

slope that is created by applying differ-
ent voltages across the electrode [Fig-
ure 2]. Compared to a CCD area image
sensor which is used as a linear sensor
by line binning, a one-dimensional CCD Potential slope

having a resistive gate structure in the

KMPDC0320EA KMPDC0321EB
active area offers higher speed trans-
fer, allowing readout with low image
lag even if the pixel height is large.

Image sensors 20
 Front-illuminated type
The S11151-2048 is a front-illuminated CCD linear image sensor with high sensitivity and high resistance to UV light.

Pixel size Number of effective Line rate Dedicated driver

Type no. Pixel pitch Photo circuit * 1
[µm (H) × µm (V)] (µm) pixels (lines/s) (P.43)

S11151-2048 14 × 200 14 2048 × 1 484 C11160

*1: Sold separately

Note: Windowless type is available upon request.

Spectral response (without window, typical example)*2

(Ta=25 °C)
100

90

80
Quantum efficiency (%)

70

60

50

40

30

20

10

0
200 300 400 500 600 700 800 900 1000 1100

Wavelength (nm)
KMPDB0372EA

*2: Spectral response with quartz glass is decreased according to the spectral
transmittance characteristic of window material.

21 Image sensors
 Linear image sensors

NMOS linear image sensors

for spectrophotometry
NMOS linear image sensors are self-scanning photodiode arrays de-
signed specifically for detectors used in multichannel spectroscopy.
These image sensors feature a large photosensitive area, high UV
sensitivity and little sensitivity degradation with UV exposure, wide dy-
namic range due to low dark current and high saturation charge, supe-
rior output linearity and uniformity, and also low power consumption.

Current output type (Standard type)

NMOS linear image sensors offering excellent output linearity and ideal for spectrophotometry
Dedicated driver
Type no. Pixel height Pixel pitch Number of pixels Cooling Photo circuit * 3
(mm) (µm) (P.42, 43)

128, 256, 512 C7884 series

C8892

S3901 series 2.5 50

1024 –

S3902 series 50 128, 256, 512

0.5 Non-cooled

S3903 series 25 256, 512, 1024 C7884 series

C8892

256, 512, 1024

S3904 series 25

2048 –

2.5

S5930 series 50 256, 512

One-stage C5964 series

TE-cooled (Built in
sensor)
S5931 series 25 512, 1024

*3: Sold separately (excluding S5930/S5931 series)

Image sensors 22
 Current output type (Infrared enhanced type)

NMOS linear image sensors having high sensitivity in near infrared region

Dedicated driver
Type no. Pixel height Pixel pitch Number of pixels Cooling Photo circuit * 1
(mm) (µm) (P.42, 43)

S8380 series 50 128, 256, 512

Non-cooled C7884 series

C8892

S8381 series 25 256, 512, 1024

2.5

S8382 series 50 256, 512

One-stage C5964 series

TE-cooled (Built-in
sensor)
S8383 series 25 512, 1024

*1: Sold separately (excluding S8382/S8383 series)

Voltage output type

These voltage output sensors need only a simple design circuit for readout compared to the current output type.
Pixel height Pixel pitch Dedicated driver
Type no. Number of pixels Cooling Photo circuit
(mm) (µm)

S3921 series 2.5

50 128, 256, 512

S3922 series 0.5

Non-cooled –

S3923 series 0.5

25 256, 512, 1024

S3924 series 2.5

23 Image sensors
 Linear image sensors

CCD linear image sensors

for industry
These are CCD linear image sensors suitable for industry.

TDI-CCD image sensor

TDI-CCD captures clear, bright images even under low-light-level conditions during high-speed imaging. TDI operation mode drasti-
cally boosts sensitivity to high levels by integrating signal charges synchronously with the object movement. TDI-CCD uses a back-
thinned structure to achieve even higher quantum efficiency over a wide spectral range from the UV to the near IR region (200 to
1100 nm).

Pixel size Number of Number of Pixel rate Line rate Vertical Applicable * 2
Type no. [µm (H) × µm effective ports (MHz/port) (lines/s) transfer Photo camera
(V)] pixels

S10200-02-01 1024 × 128 2 -

S10201-04-01 2048 × 128 50000 C10000-801

4 C10000-A01
12 × 12 30 Bi-
directional
S10202-08-01 4096 × 128 8 -

S10202-16-01 4096 × 128 16 100000 -

*2: Sold separately

The C10000 series cameras are products manufactured by Hamamatsu Photonics, System Division.

TDI (Time Delay Integration) mode

In FFT-CCD, signal charges in each line are vertically trans- Time1 Time2 Time3
Object movement

First stage
Signal transfer

·
ferred during charge readout. TDI mode synchronizes this ·
·
·

vertical transfer timing with the movement timing of the ·

·
object incident on the CCD, so that signal charges are in- Last stage M

tegrated a number of times equal to the number of vertical

Charge

stages of the CCD pixels.

KMPDC0139EA

Image sensors 24
 Spectral response (without window) Configuration (S10201-04-01)

The back-thinned (back-illuminated) structure ensures higher Using multiple amplifiers (multiple output ports) permits paral-
sensitivity than front-illuminated types in the UV through the lel image readout at a fast line rate.
near IR region (200 to 1100 nm). B port side

OSb1

OSb2

OSb3

OSb4
(Typ. Ta=25 °C)
7000

6000
Photosensitivity (V/μJ · cm2)

TGb

128 pixels
5000 OFD P3V
OFG 512 pixels P2V Bidirectional
DGND P1V
TGa transfer
4000

RG
RD
OD
AGND
OG
SG
P2H
P1H
3000

OSa1

OSa2

OSa3

OSa4
2000

A port side
1000
KMPDC0260EA

0
200 300 400 500 600 700 800 900 1000 1100

Wavelength (nm)
KMPDB0268EB

Front-illuminated type
These are front-illuminated type CCD linear image sensors with high-speed line rate designed for applications such as sorting machine.

Number of Pixel rate Line rate Dedicated driver

Type no. Pixel size Number of port max. max. Photo
[µm (H) × µm (V)] effective pixels (MHz/port) (lines/s) circuit

S12551-2048 14 × 14 1 19000 –

2048 × 1 40

S12379 8×8 4 72000 –

25 Image sensors
 Linear image sensors

CMOS linear image sensors

for industry
CMOS linear image sensors incorporate a timing circuit and sig-
nal processing amplifiers integrated on the same chip, and op-
erate from simple input pulses and a single power supply. Thus
the external circuit can be simplified.

Resin-sealed type package

These are CMOS linear image sensors of small and surface mounted type suited for mass production.

Type no. Pixel height Pixel pitch Number of pixels Line rate Photo Dedicated driver
(µm) (µm) (lines/s) circuit

S10226-10 125 7.8 1024 194

S10227-10 250 12.5 512 9434

S11106-10 63.5 63.5 128 64935

S11107-10 127 127 64 111111

S12443 125 7 2496 3924 –

High-speed readout type

These are CMOS linear image sensors with simultaneous charge integration and variable integration time function that allow high-
speed readout: 10 MHz (S11637/S12198 series), 50 MHz (S11105 series).

Type no. Pixel height Pixel pitch Number of pixels Line rate Photo Dedicated driver
(mm) (µm) (lines/s) circuit

S11637-1024Q 1024 9487

12.5

S11637-2048Q 2048 4812

0.5

S12198-512Q 512 18450

25 –

S12198-1024Q 1024 9487

S11105

0.25 12.5 512 88495

S11105-01

Image sensors 26
 High sensitivity type
CMOS linear image sensors that achieve high sensitivity by adding an amplifier to each pixel.

Pixel height Pixel pitch Line rate Dedicated driver

Type no. (µm) (µm) Number of pixels (lines/s) Photo circuit * 1
(P.44)

S11108 14 14 2048 4672 –

S12706 7 7 4096 2387 C13015-01

*1: Sold separately

Digital output type

CMOS linear image sensor with internal 8-bit/10-bit AD converter

Type no. Pixel height Pixel pitch Number of pixels Line rate Photo Dedicated driver
(µm) (µm) (lines/s) circuit

S10077 50 14 1024 972 –

27 Image sensors
 Photodiode arrays with amplifier
Photodiode arrays with amplifier are a type of CMOS linear
image sensor designed mainly for long area detection systems
using an equal - magnification optical system. This sensor
has two chips consisting of a photodiode array chip for light
detection and a CMOS chip for signal processing and readout.
A long, narrow image sensor can be configured by arranging
multiple arrays in a row.

Structure figure (S11865-64/-128) Block diagram (S11865-64/-128)

CMOS signal processing chip EXTSP Vms Vdd GND

4 5 6 7

Reset 1
Timing generator 3 TRIG

CLK 2
Shift register 8 EOS

Vref 10 Hold circuit 9 Video

Vgain 11 Charge amp array

Photodiode array chip Board

KMPDC0186EA
Vpd 12 1 2 3 4 5 N-1 N

Photodiode array

KMPDC0153EA

Long and narrow area type

Linear image sensors designed for industrial inspection

Type no. Pixel height Pixel pitch Number of pixels Line rate Photo Dedicated driver
(mm) (mm) (lines/s) circuit * 2
S11865-64 0.8 0.8 64 14678
C9118
C9118-01
S11865-128 0.6 0.4 128 7568

S11865-256 0.3 0.2 256 3844 -

S11866-64-02 1.6 1.6 64 14678

C9118
C9118-01
S11866-128-02 0.8 0.8 128 7568
*2: Sold separately
Note: Types with a phosphor sheet are also available.

Driver circuits for photodiode arrays with amplifier

Type no. Features Connection Photo Suitable sensor
S11865-64
C9118 For single/parallel S11865-64G
connection S11865-128
Single power supply (+5 V) S11865-128G
Operation with two input signals (M-CLK and S11866-64-02
M-RESET) S11865-64G-02
C9118-01 For serial
connection S11866-128-02
S11866-128G-02

Image sensors 28
 Distance image sensors
These distance image sensors are designed to measure the dis-
tance to an object by TOF method. When used in combination
with a pulse modulated light source, these sensors output phase
difference information on the timing that the light is emitted and
received. The sensor output signals are arithmetically processed by
an external signal processing circuit or a PC to obtain distance data.

Example of distance measurement diagram

Drive pulse
Irradiation light

Light source
(LED array or LED)

Evaluation
kit
Ethernet

Reflected light Target

PC Distance (man, object)
image Light receiving
sensor lens

KMPDC0417EB

Distance linear image sensor

Pixel height Pixel pitch Video data rate Dedicated driver

Type no. (µm) (µm) Number of pixels max. Photo circuit
(MHz)

S11961-01CR 20 256 *1

50 5

S12973-01CT 22 64 –

Distance area image sensor

Video data rate Dedicated driver

Type no. Pixel height Pixel pitch Number of pixels max. Photo
(µm) (µm) (MHz) circuit

S11962-01CR 40 40 64 × 64 –

10

S11963-01CR 30 30 160 × 120 *1

*1: Please contact us for an evaluation kit.

29 Image sensors
 Image sensors for near infrared region
InGa A s image sensors are designed for a wide range of
applications in the near infrared region. Built-in CMOS ROIC
readout circuit allows easy signal processing. These image
sensors use a charge amplifier mode that provides a large
output signal by integrating the charge, making them ideal for
low-light-level detection.

Equivalent circuit (InGaAs linear image sensor)

Reset
Digital shift register
Clock
Vdd
Vss Video
line
Vref
Signal processing circuit

Charge
amplifier
Si
Wire
bonding

Photodiode
InGaAs

INP

KMIRC0016EB

Spectral response

G9201 to G9208 series, etc. G12230-512WB

(Typ. Ta=25 °C) (Typ. Ta=25 °C)

1.5 1.2
Td=25 °C
Td=-10 °C G9206-256W G9207-256W Td=25 °C
Td=-20 °C Td=-20 °C
G9208-256W 1.0
G9205-256W
G9201 to G9204/
Photosensitivity (A/W)
Photosensitivity (A/W)

G9211 to G9214/
1.0 G9494 series 0.8

G11135 series
G11620 series 0.6
G11608
series
0.5 0.4

0.2

0 0
0.5 1.0 1.5 2.0 2.5 3.0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

Wavelength (μm) Wavelength (μm)

KMIRB0068EE KMIRB0094EA

Image sensors 30
 InGaAs linear image sensors for spectrometry

Pixel Spectral Dedicated

Type no. Cooling height Pixel pitch Number of Line rate responese range Defective Photo driver
pixels λ pixel circuit * 1
(µm) (µm) (lines/s) (µm) (P.42)

G9203-256D 50 256 1910

0.9 to 1.7 0

G9204-512D 25 512 960*2

Non- 500
cooled
G11608-256DA 50 256 17200

0.5 to 1.7 1% max.

G11608-512DA 25 512 9150*2

G9211-256S 50 256 1910

250
G9212-512S 25 512 960*2
1% max.
G9213-256S 50 256 1910
500
G9214-512S One-stage 25 512 960*2
TE-cooled 0.9 to 1.67 C8061-01
G9201-256S (Td=-10 °C) 50 256 1910
250
G9202-512S 25 512 960*2
0
G9203-256S 50 256 1910
500
G9204-512S 25 512 960*2

G9205-256W 0.9 to 1.85

G9206-256W 0.9 to 2.05

G9206-02 50 256 1910 0.9 to 2.15

G9207-256W Two-stage 0.9 to 2.25

TE-cooled 250 5% max. C8062-01
G9208-256W (Td=-20 °C) 0.9 to 2.55

G9205-512W 0.9 to 1.85

G9206-512W 25 512 960*2 0.9 to 2.15

G9208-512W 0.9 to 2.55

*1: Sold separately
*2: When two video lines are used for readout, the line rate is equal to that for 256 channels.

31 Image sensors
 Image sensors for near infrared region

High-speed type InGaAs linear image sensors

These are linear image sensors with high-speed data rate designed for industrial measuring instruments.

Pixel Spectral Dedicated

Type no. Cooling height Pixel pitch Number of Line rate responese range Defective Photo driver
pixels λ pixel circuit * 3
(µm) (µm) (lines/s) (µm) (P.44)

G9494-256D 50 50 256 7100

Non-cooled 0.9 to 1.7 1% max. C10820

G9494-512D 25 25 512 3720*4

The G10768 series is a high-speed infrared image sensor with 1024 pixels designed for applications such as foreign object
screening and medical diagnostic equipment where a multichannel high-speed line rate is required.

Pixel Spectral Dedicated

Type no. Cooling height Pixel pitch Number of Line rate responese range Defective Photo driver
pixels λ pixel circuit * 3
(µm) (µm) (lines/s) (µm) (P.42)
G10768-1024D 100
Non-cooled 25 1024 39000 0.9 to 1.7 1% max. C10854
G10768-1024DB 25

Back-illuminated type InGaAs linear image sensors

The back-illuminated InGaAs photodiode and CMOS-ROIC are bump bonded to provide a single output terminal.

Pixel Spectral Dedicated

Type no. Cooling height Pixel pitch Number of Line rate responese range Defective Photo driver
pixels λ pixel circuit * 3
(µm) (µm) (lines/s) (µm) (P.44)

G11135-256DD 50 50 256 14000

C11514

G11135-512DE 25 25 512 8150

G11620-128DA 128 30800

Non-cooled 50 0.95 to 1.7

G11620-256DA 256 17200 1% max.

500 C11513

G11620-256DF 256 17200

25

G11620-512DA 512 9150

G11620-256SA One-stage 50 256 17200

TE-cooled 500 0.95 to 1.67
G11620-512SA (Td=-10 °C) 25 512 9150

Two-stage
G12230-512WB TE-cooled 250 25 254 + 254 9150 0.95 to 2.15 2% max.
(Td=-20 °C)
*3: Sold separately
*4: When two video lines are used for readout, the line rate is equal to that for 256 channels.

Image sensors 32
 InGaAs area image sensor
The InGaAs area image sensors have a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and
back-illuminated InGaAs photodiodes.

Pixel Spectral Dedicated

Type no. Cooling height Pixel pitch Number of Frame rate *1 responese range Defective Photo driver
pixels λ pixel circuit * 2
(µm) (µm) (frames/s) (µm) (P.42)

G11097-0606S 64 × 64 1025 C11512

One-stage
TE-cooled 0.95 to 1.7
(Td=25 °C)
G11097-0707S 50 50 128 × 128 279 1% max. C11512-01

One-stage
G12460-0606S TE-cooled 64 × 64 1025 1.12 to 1.9 C11512
(Td=0 °C)

G12242-0707W 128 × 128 258 1% max. C11512-02

Two-stage
G13393-0808W TE-cooled 20 20 320 × 256 228 0.95 to 1.7
(Td=15 °C) 0.37%
max.
G13393-0909W 640 × 512 62

Two-stage
G13441-01 TE-cooled 50 50 192 × 96 867 1.3 to 2.15 1% max.
(Td=-20 °C)
*1: Integration time 1 μs (min.)
*2: Sold separately

Block diagram (G11097-0606S/-0707S, G12460-0606S)

A sequence of operation of the readout circuit is de-

scribed below. Start
In the readout circuit, the charge amplifier output voltage
is sampled and held simultaneously at all pixels during
the integration time determined by the low period of the
master start pulse (MSP) which is as a frame scan signal.

Shift register
64 × 64 pixels
Then the pixels are scanned and their video signals are (G11097-0606S, G12460-0606S)
128 × 128 pixels
output. (G11097-0707S)

Pixel scanning starts from the starting point at the upper

left in the right figure. The vertical shift register scans
from top to bottom in the right figure while sequentially
selecting each row.
For each pixel on the selected row, the following opera-
End
tions are performed:
Offset
Signal processing circuit compensation VIDEO
 Transfers the sampled and held optical signal informa- circuit

tion to the signal processing circuit as a signal voltage.

 Resets the amplifier in each pixel after having trans- Shift register
KMIRC0067EA
ferred the signal voltage and transfers the reset volt-
age to the signal processing circuit.
The vertical shift register then selects the next row and repeats
‘ The signal processing circuit samples and holds the
the operations from  to ’. After the vertical shift register ad-
signal voltage  and reset voltage .
vances to the 64th row (G11097-0606S, G12460-0606S) or 128th
’ The horizontal shift register scans from left to right in
(S11097-0707S), the MSP, which is a frame scan signal, goes
the right figure, and the voltage difference between 
low. After that, when the MSP goes high and then low, the reset
and  is calculated in the offset compensation circuit.
switches for all pixels are simultaneously released and the next
This eliminates the amplifier offset voltage in each pix-
frame integration begins.
el. The voltage difference between  and  is output
as the output signal in the form of serial data.

33 Image sensors
 X-ray image sensors
With the CCD with a CsI type FOS (FOP with X-ray scintillator),
the FOP functions as a shield, so X-ray damage on the CCD can
be suppressed. In addition to FOS, FOP coupling is also possible.
Note that products that employ GOS for the scintillator are also
available as low cost types.
The TDI - CCD S719 9 - 01 and S8 65 8 - 01 can provide cross -
sectional X-ray imaging of large objects through TDI operation.
It can be used not only in X-ray radiography equipment but also
for industrial inline non-destructive inspections.
The photodiode arrays with amplifiers that have a phosphor
sheet affixed on the photosensitive area can be used in various
types of inspection equipment such as inline industrial product inspection equipment and foreign matter inspection of canned and
retort food.

X-ray image examples

taken with S10810-11

taken with S8658-01 taken with S7199-01

Image sensors 34
 CCD area image sensors for X-ray radiography
CCD image sensors with large photosensitive area and high resolution are used in X-ray radiography.

Type no. Scintillator Pixel size Number of Frame rate * 1 Photo Dedicated driver
[µm (H) × µm (V)] effective pixels (frames/s) circuit

S8980 2 –
1500 × 1000
S10810-11 1 C9266-03
C9266-04
CsI
(+ FOP)
S10814 20 × 20 1 –

S10811-11 1 (max.) C9266-03

1700 × 1200 C9266-04

S8984-02 Without 1 –
scintillator * 2
*1: Area scanning
*2: Coupled with FOP

CCD signal processing module

The C9266-03/-04 are signal processing circuits for X-ray CCD area image sensors. These allow easy operation by connecting to
a PC.
The C9226-03 has a BNC connector for external trigger input.

Type no. Signal frequency Interface Photo Suitable sensor

C9266-03
1 MHz USB 2.0 S10810-11
S10811-11
C9266-04

Connection example

USB cable

PC (Windows 7) CCD signal processing CCD area image sensor

module
KACCC0306ED

35 Image sensors
 X-ray image sensors

CMOS area image sensors for X-ray radiography

CMOS image sensors with large photosensitive area and high resolution are used in X-ray radiography.

Type no. Scintillator Pixel size Number of Frame rate Photo Dedicated driver
[µm (H) × µm (V)] effective pixels (frames/s) circuit

S10830

1000 × 1500 0.9

S10834
CsI 20 × 20 –
(+ FOP)
S10831

1300 × 1700 0.6

S10835

Photosensitive area

S10830, S10834 S10831, S10835

Upper light-shielded pixels Upper light-shielded pixels

114 pixels 114 pixels (766, 768, 770 pixels) 269 pixels 269 pixels (756, 758, 760 pixels)
114 pixels

269 pixels
1500 pixels

1700 pixels
Effective pixels Vertical shift register Effective pixels Vertical shift register
(1000 × 1500 pixels) scanning direction (1300 × 1700 pixels) scanning direction

Monitor photodiode
Monitor photodiode
all around effective pixels
all around effective pixels

Lower light-shielded pixels Lower light-shielded pixels

Horizontal shift register
(1000 × 3 pixels) (1300 × 3 pixels)
scanning direction
Horizontal shift register
KMPDC0448EA scanning direction
KMPDC0449EA

TDI-CCD area image sensors

These CCDs are long and narrow type FFT-CCD area image sensors coupling FOS. CCD chips are linearly arranged in close
proximity to form a long and narrow sensor format. They are used for X-ray radiography or non-destructive inspection.

Type no. Scintillator Pixel size Number of Frame rate *4 Photo Dedicated driver
[µm (H) × µm (V)] effective pixels (frames/s) circuit

S7199-01* 3 1536 × 128 –

CsI (2-chip buttable)
48 × 48 15
(+ FOP)
S8658-01* 3 1536 × 128 –
(3-chip buttable)
*3: The types coupling FOP (S7199-01F, S8658-01F) are provided.
*4: Area scanning

Image sensors 36
 Photodiode arrays with amplifier for non-destructive inspection
Photodiode arrays with amplifier having phosphor sheet affixed on the photosensitive area are allowed for non-destructive inspection

Type no. Scintillator Pixel height Pixel pitch Number of Line rate Photo Dedicated driver
(mm) (mm) pixels (lines/s) circuit * 1

S11865-64G 0.8 0.8 64 14678

C9118
C9118-01
S11865-128G 0.6 0.4 128 7568

S11865-256G Phosphor 0.3 0.2 256 3844 -

screen

S11866-64G-02 1.6 1.6 64 14678

C9118
C9118-01
S11866- 0.8 0.8 128 7568
128G-02
*1: Sold separately

Driver circuits for photodiode arrays with amplifier

Type no. Features Connection Photo Suitable sensor

For single/parallel S11865-64

C9118 connection S11865-64G
Single power supply (+5 V) S11865-128
Operation with two input signals S11865-128G
(M-CLK and M-RESET) S11866-64-02
S11866-64G-02
C9118-01 For serial S11866-128-02
connection S11866-128G-02

Connection examples

Single or parallel readout example (C9118) Serial readout example (C9118-01)

Simultaneous integration/output Simultaneous integration/serial output

(effective for high-speed processing) (effective for simplifying external processing circuit)
S11865/ S11865/
S11866 series C9118 S11866 series C9118-01

External External
CN2 CN2
controller controller

Scan CN3
direction

Accessory
S11865/ cable
S11866 series C9118 S11865/
S11866 series C9118-01
External
CN2
controller
CN2
Scan
direction CN3

S11865/
S11866 series C9118
S11865/
External S11866 series C9118-01
CN2
controller
CN2
Scan Scan
direction direction CN3
KACCC0644EA

KACCC0645EC

37 Image sensors
 X-ray flat panel sensors
Flat panel sensors are digital X-ray image sensors developed
as key devices for rotational radiography (CT) and other real-
time X-ray imaging applications requiring high sensitivity and
high image quality. Flat panel sensors consist of a sensor board
and a control board, both assembled in a thin, flat and compact
configuration.

For radiography (rotational type)

These are flat panel sensors for high-speed operation.
Number of
Type no. Scan mode Output pixels Pixel size Frame rate Resolution Photo
[(H) × (V)] (µm) (frames/s) (line pairs/mm)
Fast mode 35
Digital 624 × 624 200 × 200 2.5
(13-bit)
Partial mode 70
C10900D *2
Fine mode 17
Digital 1248 × 1248 100 × 100 4.5
(12-bit)
Panoramic mode 280
Digital
Fast mode 504 × 341 200 × 200 60 2.5
(13-bit)
C10901D *2 Fine mode 30
Digital 1008 × 682 100 × 100 4.5
(12-bit)
Panoramic mode 265

Fast mode 600 × 498 240 × 240 80 2.1

Fine mode 30
Digital 1200 × 996 120 × 120 4.2
C12902D-40 (16-bit)
Panoramic mode 400
Rtbin panoramic 1200 × 498 120 × 240 600 —
mode
Normal mode 1248 × 50 120 × 120 400 4.2
Digital
C12504D-56 (14-bit)
Rtbin mode 1248 × 25 120 × 240 780 —

Normal mode 1872 × 50 120 × 120 400 4.2

Digital
C12505D-56 (14-bit)
Rtbin mode 1872 × 25 120 × 240 780 —

*2: LVDS interface. Gigabit Ethernet type is also available.

Image sensors 38
 For radiography (biochemical imaging)
These are flat panel sensors for low energy X-ray.

Number of pixels Pixel size Frame rate * 1 Resolution

Type no. Output [(H) × (V)] Interface Photo
(µm) (frames/s) (line pairs/mm)

C7942CK-22 Digital 2400 × 2400 2 8 RS-422

(12-bit) (differential)

C9730DK-10 1056 × 1056 50 4 10

Digital USB 2.0

(14-bit)

C9732DK-11 2400 × 2400 1 10

*1: Single operation

General type (off-line)

These are flat panel sensors employing a high-quality CsI scintillator. They feature high resolution suitable for non-destructive
inspection. They are suitable for use in combination with sealed type micro focus X-ray sources (50 kVp to 100 kVp).

Type no. Output Number of pixels Pixel size Frame rate * 2 Resolution Interface Photo
[(H) × (V)] (µm) (frames/s) (line pairs/mm)

C7921CA-29 1056 × 1056 4

Digital RS-422
50 8
(12-bit) (differential)

C7942CA-22 2400 × 2400 2

*2: Single operation

Low noise type

The C9728DK-10 is suitable for applications including diffraction.

Type no. Output Number of pixels Pixel size Frame rate Noise Interface Photo
[(H) × (V)] (µm) (frames/s) (electrons)

C9728DK-10 Digital 1056 × 1056 3 80 USB 2.0

(14-bit) 50

Connection example of flat panel sensors (Interface: LVDS, RS-422) X-ray image examples
(Rear view)
OS +
Acquisition software Hornet (taken with flat panel sensor for general X-ray application)
PC/AT

Frame
Video output
grabber
Vsync, Hsync,
Pclk

X-ray source
Monitor

Binning
(bin0, bin1)
IntExt Fish (taken with radiology type flat panel sensor)
ExtTrgGrb

Voltage source
[A.vdd, D.vdd, v (±7.5)]

ExtTrgLemo
MOS Image Sensor for X-Ray
Flat panel sensor

KACCC0269EB
39 Image sensors
 Related products for image sensors

Multichannel detector
heads
Image sensors have excellent performance characteristics, but
more sophisticated electronics and signal processing are re-
quired for driving image sensors than when using single-element
devices. To make it easier to use image sensors, Hamamatsu
provides multichannel detector heads designed for CCD/NMOS/
InGaAs image sensors. These multichannel detector heads oper-
ate with the dedicated controller or software for easy data ac-
quisition and sensor evaluation and, can extract full performance from image sensors when installed in a measurement system.

For front-illuminated type CCD area image sensors

Type no. Output Photo Applicable sensor

C7020 S9970 series

C7020-02 S9972 series

C7021 S9971-0906/-1006/-1007

Analog Sold separately

C7021-02 S9973-1007

C7025 S9971-1008

C7025-02 S9973-1008

For back-thinned type CCD area image sensors

Type no. Output Photo Applicable sensor

C7040 S7030 series, S11500-1007

C7041 Analog S7031 series, S11501-1007S Sold separately

C7043 S7033 series

Image sensors 40
 Type no. Output Photo Applicable sensor

C7044 S7034 series

C7180 Analog S7170-0909 Sold separately

C7181 S7171-0909-01

Note: Multichannel detector heads for two-stage TE-cooled type CCD area image sensors (back-thinned type) S7032 series are also available.

Multichannel detector head controller

Supports main multichannel detector heads designed to use a CCD image sensor or NMOS/InGaAs linear image sensor

Type no. Interface Photo Applicable multichannel detector head

C7557-01 USB 2.0 C7020/-02, C7021/-02, C7025/-02, C7040, C7041, C7043, C7044
C7180, C7181, C8061-01, C8062-01, C5964 series, C8892

Accessories
· USB cable
· Fuse (2.5 A)
· Detector head connection cables
· AC cable
· Software [Compatible OS: Windows 7 (32-bit , 64-bit), Windows 8.1 (64-bit)]
· Operation manual
· MOS adapter

Connection examples (C7557-01)

Shutter*
timing pulse
AC cable (100 to 240 V; included with C7557-01)

Trig.
POWER

USB cable
Dedicated cable
SIGNAL I/O
(included with
(included with C7557-01) C7557-01)
TE CONTROL I/O

Image sensor C7557-01 PC [Windows 7 (32-bit, 64-bit), Windows 8.1 (64-bit)]

+ (USB 2.0)
Multichannel
detector head

* Shutter, etc. are not available

KACCC0402ED

41 Image sensors
 Related products for image sensors

For NMOS linear image sensors

Type no. Output Photo Applicable sensor

C5964 series S5930/S5931/S8382/S8383 series Built in sensor

Analog

S3901 to S3904/S8380/S8381 series

C8892 Sold separately
(excluding S3901-1024Q and S3904-2048Q)

Note: Controller for multichannel detector head is available. Refer to P41 for details.

For InGaAs linear image sensors

Type no. Output Photo Applicable sensor

G10768-1024D
C10854 CameraLink G10768-1024DB

G9201/G9203/G9211/G9213-256S
C8061-01*1 G9202/G9204/G9212/G9214-512S Sold separately

Analog

G9205/G9206/G9207/G9208-256W
C8062-01*1 G9206-02, G9205/G9206/G9208-512W

*1: Controller for multichannel detector head is available. Refer to P41 for details.

For InGaAs area image sensors

Type no. Output Photo Applicable sensor

G11097-0606S
C11512 G12460-0606S

C11512-01 CameraLink G11097-0707S Sold separately

C11512-02 G12242-0707W

Image sensors 42
 Driver circuits for image
sensors
Driver circuits designed for image sensors are available.

Driver circuits for CCD image sensors

Type no. Signal frequency Interface Photo Applicable sensor

C11287 250 kHz S10420-01 series

S11510 series

C11288 4 MHz S11071 series

C11160 1 MHz USB 2.0 S11151-2048 Sold

separately

C11165-02 6 MHz S11155-2048-02

S11156-2048-02

C11860 250 kHz S11850-1106

S11511 series

Driver circuits for NMOS linear image sensors (Current output type)

Type no. Feature Photo Applicable sensor

C7884 High-precision driver circuit

S3901 to S3904 series
S8380/S8381 series
(excluding
S3901-1024Q
and S3904-2048Q)
C7884-01 Low noise driver circuit

43 Image sensors
 Related products for image sensors

Driver circuits for CMOS linear image sensors

Type no. Feature Photo Applicable sensor

C9001 Single power supply (+5 V) S8377/S8378 series

Operation with two input signals (clock and start)

With variable integration time function

C10808 series High-speed readout type (C10808) and low noise type (C10808-01) S10121 to S10124 series
are available.

Built-in 16-bit A/D converter

C13015-01 Interface: USB 2.0 S11639-01, S12706, S13496
Single power supply: USB bus power (+5 V)

Driver circuit for InGaAs linear image sensors

Type no. Feature Photo Applicable sensor

C10820 High gain setting suitable for low-level-light G9494-256D

G9494-512D

G11620 series
C11513 USB 2.0 interface (USB bus power) (G11620-256SA/-512SA:
incompatible)

C11514 CameraLink G11135 series

Image sensors 44
Copies of the full warranty can be obtained prior to the purchase of products by contacting your local Hamamatsu sales office.
Hamamatsu makes no other warranties, and any and all implied warranties of merchantability, or fitness for a particular purpose,
are hereby disclaimed. The customer is responsible for use of the product in accordance with Hamamatsu's instructions and
within the operating specifications and ratings listed in this catalogue. Hamamatsu shall not be responsible for the customer's
improper selection of a product for a particular application or otherwise. No warranty will apply if the products are in any way
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rules should be followed when incorporating these products into devices that could potentially cause bodily injury.
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possibility of such loss or damage. The limitation of liability set forth herein applies both to products and services purchased or
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date of purchase or provision of the products or services.
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The products described in this catalogue should be used by persons who are accustomed to the properties of photoelectronics
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trained in the necessary precautions surrounding their use.
The information in this catalogue is subject to change without prior notice.
Information furnished by Hamamatsu is believed to be reliable. However, no responsibility is assumed for possible inaccuracies
or omissions. Before using these products, always contact us for the delivery specification sheet to check the latest specifications.
No patent rights are granted to any of the circuits described herein.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1, Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558, Japan
Telephone: (81)53-434-3311, Fax: (81)53-434-5184
www.hamamatsu.com

Main Products Sales Offices

Si photodiodes
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APD HAMAMATSU PHOTONICS K.K. Dornacherplatz 7 4500 Solothurn, Switzerland
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Image sensors Telephone: (81)53-452-2141, Fax: (81)53-456-7889
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HAMAMATSU PHOTONICS FRANCE S.A.R.L.
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change without notice. No patent E-mail: [email protected]
rights are granted to any of the
circuits described herein.
© 2017 Hamamatsu Photonics K.K.

Quality, technology, and service

are part of every product. Cat. No. KMPD0002E15
Mar. 2017 DN
Printed in Japan