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BJTs Device Strucutres & Physical

Operations Questions and
Answers
by Manish
4-5 minutes

This set of Electronic Devices and Circuits Multiple Choice

Questions & Answers (MCQs) focuses on “BJTs Device
Strucutres and Physical Operations”.

1. Which of the following is not a part of a BJT?

a) Base
b) Collector
c) Emitter
d) None of the mentioned
View Answer

Answer: d
Explanation: BJT consists of three semiconductor regions,
base region, emitter region and collector region.

2. The number of pn junctions in a BJT is/are

a) 1
b) 2
c) 3
d) 4

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View Answer

Answer: b
Explanation: There are two pn junctions, base-emitter
junction and collector-emitter junction respectively.

3. In which of the following modes can a BJT be used?

a) Cut-off mode
b) Active mode
c) Saturation mode
d) All of the mentioned
View Answer

Answer: d
Explanation: These three are the defined regions in which a
BJT operates.

4. If a BJT is to be used as an amplifier, then it must

operate in___________
a) Cut-off mode
b) Active mode
c) Saturation mode
d) All of the mentioned
View Answer

Answer: b
Explanation: A BJT operates as an amplifiers in active
mode and as a switch in cut-off or saturation mode.

5. If a BJT is to be used as a switch, it must operate

in____________
a) Cut-off mode or active mode
b) Active Mode or saturation mode

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c) Cut-off mode or saturation mode

d) Cut-off mode or saturation mode or active mode
View Answer

Answer: c
Explanation: A BJT operates as an amplifiers in active
mode and as a switch in cut-off or saturation mode.

6. In cut off mode

a) The base-emitter junction is forward biased and emitter-
collector junction is reversed biased
b) The base-emitter junction is forward biased and emitter-
collector junction is forward biased
c) The base-emitter junction is reversed biased and emitter-
collector junction is reversed biased
d) The base-emitter junction is reversed biased and emitter-
collector junction is forward biased
View Answer

Answer: c
Explanation: In cut-off mode there is no current flowing
through the BJT hence both junctions must be reversed
biased else if either of them is forward biased then the
current will flow.

7. On which of the following does the scale current not

depends upon?
a) Effective width of the base
b) Charge of an electron
c) Electron diffusivity
d) Volume of the base-emitter junction
View Answer

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Answer: d
Explanation: The saturation current does not depends upon
the volume of the base-emitter junction. Instead it depends
upon the area of the cross section of the base-emitter
junction in a direction perpendicular to the flow of current.

8. On which of the following does the collector current not

depends upon?
a) Saturation current
b) Thermal voltage
c) Voltage difference between the base and emitter
d) None of the mentioned
View Answer

Answer: d
Explanation: Collector current depends linearly of the
saturation current and exponentially to the ratio of the
voltage difference between the base and collector and
thermal voltage.

9. The range for the transistor parameter also referred as

common-emitter current gain has a value of__________ for
common devices.
a) 50-200
b) 400-600
c) 750-1000
d) > 1000
View Answer

Answer: a
Explanation: Most commonly used transistors have a
voltage gain of in the range of 50-200. Only some specially

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designed transistors have a transistor parameter in the

range of 1000.

10. The collector current Ic is related to the emitter current

Ie by a factor k. If b is the transistor parameter then the
value of k in terms of b is
a) k = b/(b + 1)
b) k = (b + 1)/b
c) b = (k + 1)/k
d) None of the mentioned
View Answer

Answer: a
Explanation: Ic = k Ie (given) and also Ie = (b + 1)/b Ic
(standard result). Equating these two results we get k = b/(b
+ 1).

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BJTs Current-Voltage
Characteristics Questions and
Answers
by Manish
4-5 minutes

This set of Electronic Devices and Circuits Multiple Choice

Questions & Answers (MCQs) focuses on “BJTs Current-
Voltage Characteristics”.

1. The curve between the collector current versus the

potential difference between the base and emitter is
a) A straight line inclined to the axes
b) A straight line parallel to the x-axis
c) An exponentially varying curve
d) A parabolic curve
View Answer

Answer: c
Explanation: The natural logarithm of the collector current
depends directly on the the potential difference between the
base and the emitter.

2. The curve between the collector current and the

saturation is
a) A straight line inclined to the axes

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b) A straight line parallel to the x-axis

c) A straight line parallel to the y-axis
d) An exponential curve
View Answer

Answer: a
Explanation: The collector current depends directly on the
saturation current.

3. The magnitude of the thermal voltage is given by

a) k/Tq
b) kT/q
c) q/Kt
d) Tk/q
View Answer

Answer: b
Explanation: kT/q is the correct mathematical expression for
the thermal voltage.

4. The correct relation between the transistor parameters α

and ß are related by
a) ß = 1 – α/α
b) ß = 1 + α/α
c) α = ß + 1/ß
d) α = ß/ß + 1
View Answer

Answer: d
Explanation: Only expression α = ß/ß + 1 is the correct
expression that relates α and ß.

5. The correct expression relating the emitter current Ie to

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the collector current Ic is

a) Ie = α Ic
b) Ic = α Ic
c) Ie = ß Ic
d) Ic = ß Ic
View Answer

Answer: b
Explanation: Ie = Ic/α or Ic = α Ie

6. The value of the thermal voltage at room temperature

can be approximated as
a) 25 mV
b) 30 mV
c) 35 mV
d) 40 mV
View Answer

Answer: a
Explanation: Thermal voltage is given by kT/q which at T =
25 degrees Celsius is approximately 25 mV.

7. The correct relation between the emitter current Ie and

the base current Ib is given by
a) Ib = (1 + α) Ie
b) Ib = (α – 1) Ie
c) Ie = (1 – ß) Ib
d) Ie = (1 + ß) Ib
View Answer

Answer: d
Explanation: The correct mathematical expression are Ie =
(1 – ß) Ib and Ib = (1 – α) Ie respectively.

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8. The Early Effect is also called as

a) Base-width modulation effect
b) Base-width amplification effect
c) Both of the mentioned
d) None of the mentioned
View Answer

Answer: a
Explanation: At a given value of vBE, increasing vCE
increases the reverse-bias voltage on the collector–base
junction, and thus increases the width of the depletion
region of this junction. This in turn results in a decrease in
the effective base width W. Also the saturation current is
inversely proportional to the width, the saturation current will
increase and also makes collector current increases
proportionally. This is the Early Effect. For the reasons
mentioned above, it is also known as the base-width
modulation effect.

9. For the BJT to operate in active mode Collector-Base

junction must be
a) Heavily doped
b) Must reversed bias
c) Must be forward bias
d) Lightly doped
View Answer

Answer: b
Explanation: The BJT operates in active mode when the
collector-Base junction is reversed bias. Also doping cannot
prevent saturation of the transistor.

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10. Collector current (Ic) reaches zero when

a) Vce = Vt ln (Isc/I)
b) Vt = Vce ln (Isc/I)
c) Vce = Vt ln (I/Isc)
d) Vce = Vt ln (Isc + I/I)
View Answer

Answer: a
Explanation: Ic = Is exp (Vbe/Vt) – Isc exp(Vbc/Vt). In this
expression put ic = 0 and simplify.

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BJT Circuits at DC - Electronic

Devices and Circuits Questions
and Answers
by Manish
5-6 minutes

This set of Electronic Devices and Circuits Multiple Choice

Questions & Answers (MCQs) focuses on “BJT Circuits at
DC”.

1. Which of the following condition is true for cut-off mode?

a) The collector current Is zero
b) The collector current is proportional to the base current
c) The base current is non zero
d) All of the mentioned
View Answer

Answer: a
Explanation: The base current as well as the collector
current are zero in cut-off mode.

2. Which of the following is true for the cut-off region in an

npn transistor?
a) Potential difference between the emitter and the base is
smaller than 0.5V
b) Potential difference between the emitter and the base is

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smaller than 0.4V

c) The collector current increases with the increase in the
base current
d) The collector current is always zero and the base current
is always non zero
View Answer

Answer: b
Explanation: Both collector and emitter current are zero in
cut-off region.

3. Which of the following is true for a typical active region of

an npn transistor?
a) The potential difference between the emitter and the
collector is less than 0.5 V
b) The potential difference between the emitter and the
collector is less than 0.4 V
c) The potential difference between the emitter and the
collector is less than 0.3 V
d) The potential difference between the emitter and the
collector is less than 0.2 V
View Answer

Answer: c
Explanation: Most commonly used transistors have Vce
less than 0.4 V for the active region.

4. Which of the following is true for the active region of an

npn transistor?
a) The collector current is directly proportional to the base
current
b) The potential difference between the emitter and the

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collector is less than 0.4 V

c) All of the mentioned
d) None of the mentioned
View Answer

Answer: c
Explanation: The base current and the collector current are
directly proportional to each other and the potential
difference between the collector and the base is always less
than 0.4 V.

5. Which of the following is true for the saturation region of

BJT transistor?
a) The collector current is inversely proportional to the base
current
b) The collector current is proportional to the square root of
the collector current
c) The natural logarithm of the collector current is directly
proportional to the base current
d) None of the mentioned
View Answer

Answer: b
Explanation: The collector current is directly proportional to
the base current in the saturation region of the BJT.

6. Which of the following is true for a npn transistor in the

saturation region?
a) The potential difference between the collector and the
base is approximately 0.2V
b) The potential difference between the collector and the
base is approximately 0.3V

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c) The potential difference between the collector and the

base is approximately 0.4V
d) The potential difference between the collector and the
base is approximately 0.5V
View Answer

Answer: d
Explanation: The commonly used npn transistors have a
potential difference of around 0.5V between he collector
and the base.

7. The potential difference between the base and the

collector Vcb in a pnp transistor in saturation region is
________
a) -0.2 V
b) -0.5V
c) 0.2 V
d) 0.5 V
View Answer

Answer: b
Explanation: The value of Vcb is -0.5V for a pnp transistor
and 0.5V for an npn transistor.

8. For a pnp transistor in the active region the value of Vce

(potential difference between the collector and the base) is
a) Less than 0.3V
b) Less than 3V
c) Greater than 0.3V
d) Greater than 3V
View Answer

Answer: a

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Explanation: For a pnp transistor Vce is less than 0.3V, for

an npn transistor it is greater than 0.3V.

9. Which of the following is true for a pnp transistor in active

region?
a) CB junction is reversed bias and the EB junction is
forward bias
b) CB junction is forward bias and the EB junction is forward
bias
c) CB junction is forward bias and the EB junction is reverse
bias
d) CB junction is reversed bias and the EB junction is
reverse bias
View Answer

Answer: a
Explanation: Whether the transistor in npn or pnp, for it be
in active region the EB junction must be reversed bias the
CB junction must be forward bias.

10. Which of the following is true for a pnp transistor in

saturation region?
a) CB junction is reversed bias and the EB junction is
forward bias
b) CB junction is forward bias and the EB junction is forward
bias
c) CB junction is forward bias and the EB junction is reverse
bias
d) CB junction is reversed bias and the EB junction is
reverse bias
View Answer

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Answer: b
Explanation: Whether the transistor in npn or pnp, for it be
in saturation region the EB junction must be forward bias
the CB junction must be forward bias.

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BJT Amplifier Design - Electronic

Devices and Circuits Questions
and Answers
by Manish
3-4 minutes

This set of Electronic Devices and Circuits Multiple Choice

Questions & Answers (MCQs) focuses on “BJT in Amplifier
Design”.

1. Find the maximum allowed output negative swing without

the transistor entering saturation, and
a) 1.27 mV
b) 1.47 mV
c) 1.67 mV
d) 1.87 mV
View Answer

Answer: d Explanation:

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2. The corresponding maximum input signal permitted is

a) 1.64 mV
b) 1.74 mV
c) 1.84 mV
d) 1.94 mV
View Answer

Answer: d
Explanation: If we assume linear operation right to
saturation we can use the gain Av to calculate the maximum
input signal. Thus for an output swing Δ Vo = 0.8 we have
Δ Vi = Δ Vo / Av = -0.7 / -360 = 1.94 mV.

(Q.3- Q.5) For the amplifier circuit in Fig. 6.33(a) with Vcc =
+10 V, Rc = 1 kΩ and the DC collector bias current equal to
Ic,

3. Find the voltage gain.

a) 100 Ic
b) 200 Ic

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C) 400 Ic
d) 800 Ic
View Answer

Answer: c Explanation:

4. The maximum possible positive output signal swing as

determined by the need to keep the transistor in the active
region.
a) 9.7 + Ic
b) 9.7 – Ic
c) 10.3 + Ic
d) 10.3 – Ic
View Answer

Answer: a
Explanation: Assuming the output voltage Vo = 0.3v is the
lowest Vce to stay out of saturation.
Vo = 0.3 = 10 – IcRc
= 10 – IcRc + ΔVo
Δ Vo = -10 + 0.3 + Ic*1.

5. The maximum possible negative output signal swing as

determined by the need to keep the transistor in the active

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region.
a) 0.1 Ic
b) Ic
c) 10 Ic
d) 100 Ic
View Answer

Answer: b
Explanation: Maximum output voltage before the Transistor
is cutoff.
Vce + ΔVo = Vcc
ΔVo = Vcc – Vce
= 10 – 10 + 10 Ic
= 10 Ic.

6. The transistor in the circuit below is biased at a dc

collector current of 0.5 mA. What is the voltage gain?

a) -1 V/V
b) -10 V/V
c) -100 V/V
d) -1000 V/V
View Answer

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Answer: c Explanation:

7. For a BJt Vt is 5 V, Rc = 1000 ohm and bias current Ic is

12 mA. The value of the voltage gain is __________
a) -1.2 V/V
b) -2.4 V/V
c) -3.6 V/V
d) -4.8 V/V
View Answer

Answer: b
Explanation: Voltage gain is (Ic X Rc ) / Vt.

(Q.8–Q.10) (Q.3- Q.5) For the BJT amplifier circuit with Vcc
= +10 V, Rc = 1 kΩ and the DC collector bias current equal
to 5 mA,

8. The value of the voltage gain is _______________

a) -2 V/V
b) -4 V/V
c) -10 V/V
d) -20 V/V
View Answer

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Answer: a
Explanation: The voltage is 400 X Ic where Ic is 5 mA.

9. The maximum possible positive output signal swing as

determined by the need to keep the transistor in the active
region.
a) -1.7 V
b) -2.7 V
c) -3.7 V
d) -4.7 V
View Answer

Answer: d
Explanation: The maximum voltage swing is given by -10 +
0.3 + (Ic X Rc). Putting Ic as 5 mA, we get -4.7 mV.

10. The maximum possible negative output signal swing as

determined by the need to keep the transistor in the active
region.
a) 0.5 V
b) 1 V
c) 5 V
d) 10 V
View Answer

Answer: c
Explanation: It is given by -10 + 10 + (Ic X Rc). Putting Ic as
5 mA we get 5V.

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here is complete set of 1000+ Multiple Choice Questions

and Answers.

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Small Signal Operations & Model

Questions and Answers
by Manish
3-4 minutes

This set of Electronic Devices and Circuits Multiple Choice

Questions & Answers (MCQs) focuses on “Small Signal
Operations and Model”.

1. A transistor with ß = 120 is biased to operate at a dc

collector current of 1.2 mA. Find the value of gm.
a) 12mA/V
b) 24 mA/V
c) 36 mA/V
d) 48 mA/V
View Answer

Answer: d Explanation:

2. A transistor with ß = 120 is biased to operate at a dc

collector current of 1.2 mA. Find the value of R?p.

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a) 625 ohm
b) 1250 ohm
c) 2500 ohm
d) 5000 ohm
View Answer

Answer: c Explanation:

3. A transistor with ß = 120 is biased to operate at a dc

collector current of 1.2 mA. Find the value of Re.
a) 2.5 ohm
b) 20.6 ohm
c) 25.2 ohm
d) 30.4 ohm
View Answer

Answer: b Explanation:

4. A transistor operating with nominal gm of 60 mA/V has a

ß that ranges from 50 to 200. Also, the bias circuit, being
less than ideal, allows a 20% variation in Ic. What is the
smallest value found of the resistance looking into the

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base?
a) 347 ohm
b) 694 ohm
c) 1041 ohm
d) 1388 ohm
View Answer

Answer: b Explanation:

5. A transistor operating with nominal gm of 60 mA/V has a

ß that ranges from 50 to 200. Also, the bias circuit, being
less than ideal, allows a 20% variation in Ic. What is the
largest value found of the resistance looking into the base?
a) 1050 ohm
b) 21000 ohm
c) 3150 ohm
d) 4200 ohm
View Answer

Answer: d Explanation:

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6. A designer wishes to create a BJT amplifier with a gm of

50 mA/V and a base input resistance of 2000 O or more.
What is the minimum ß he can tolerate for the transistor
used?
a) 100
b) 150
c) 200
d) 250
View Answer

Answer: a Explanation:

7. A designer wishes to create a BJT amplifier with a gm of

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50 mA/V and a base input resistance of 2000 O or more.

What emitter bis current should he choose?
a) 1.06 mA
b) 1.16 mA
c) 1.26 mA
d) 1.36 mA
View Answer

Answer: c Explanation:

8. Which of the following is true?

a) Ib = ß Ic
b) Ib = ß + 1/ Ic
c) Ib = Ic/ß
d) Ib = Ic/ ß – 1
View Answer

Answer: c
Explanation: The correct relationship between Ic and Ie is Ib
= Ic/ß.

9. The SI units of transconductance is

a) Ampere/ volt
b) Volt/ ampere

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c) Ohm
d) Siemens
View Answer

Answer: a
Explanation: Transcoductance is given by Ic/Vt.

10. Which of the following represents the correct

mathematical form of the term denoted by the symbol Rp?
a) ß/gm
b) Vt/Ib
c) All of the mentioned
d) None of the mentioned
View Answer

Answer: c
Explanation: Both of the expressions are identical.

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BJT Amplifier Configuration

Basics - Electronic Devices and
Circuits Questions and Answers
by Manish
3 minutes

This set of Electronic Devices and Circuits Multiple Choice

Questions & Answers (MCQs) focuses on “Basic BJT
Amplifier Configuration”.

(Q1-Q.6) An amplifier is measured to have an internal

resistance of 10 kΩ, voltage gain of 100V/V and output
resistance of 100 Ω. Also, when a load resistance of 1 kΩ is
connected between the output resistance if found to
decrease to 8 kΩ. If the amplifier is fed with the signal
source having an internal resistance of 2 kΩ, then
1. Find Gm.
a) 1 A/V
b) 10 A/V
c) 100 A/V
d) 1000 A/V
View Answer

Answer: a
Explanation: Gm = (voltage gain in V/V) / (output

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resistance) or 100/100 A/V.

2. Find Av.
a) 9.09 V/V
b) 10 V/V
c) 90.9 V/V
d) 100 V/V
View Answer

Answer: c
Explanation: Av = Avo X Rl/Ro+Rl or 100 X 1000/1000+100
or 90.9 V/V.

3. Find Gvo.
a) 53.3 V/V
b) 63.3 V/V
c) 73.3 V/V
d) 83.3 V/V
View Answer

Answer: d
Explanation: Gvo = (Avo X input resistance) / (input
resistance + signal resistance).

4. Find Gv.
a) 53.4 V/V
b) 72.7 V/V
c) 83.3 V/V
d) 90.9 V/V
View Answer

Answer: b
Explanation: Gv = (Gvo X Av) / Avo or 83.3 X 90.9 / 100

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V/V.

5. Find R out.
a) 146 Ω
b) 292 Ω
c) 584 Ω
d) 1168 Ω
View Answer

Answer: a
Explanation: Rout = Rl (1 – Gvo/Gv). Put in the respective
values and solve.

6. Find Ai.
a) 182 A/A
b) 364 A/A
c) 546 A/A
d) 728 A/A
View Answer

Answer: d
Explanation: (Vo X R in) / (Vi X Rl) gives the required value
of Ai.

(Q.7-Q.10) The circuit shown below is a small sine wave

signal with average zero and transistor ß =

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7. Find the value of R(E) to establish a dc emitter current of

about 0.5 mA.
a) 28.57 kΩ
b) 57.04 kΩ
c) 114.08 kΩ
d) 228.16 kΩ
View Answer

Answer: a Explanation:

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8. Find R(C) to establish a dc collector voltage of about

+5V.
a) 5 kΩ
b) 10 kΩ
c) 15 kΩ
d) 20 kΩ
View Answer

Answer: d
Explanation: Vc = 15 – Rc.Ic
5 = 15 – Rc * 0.99 * 0.5m
Rc = 20.2kΩ
= 20kΩ.

9. For R (L) = 10 kΩ and transistor Ro = 200 kΩ, determine

the overall voltage gain.
a) -21 V/V
b) -42 V/V
c) -86 V/V
d) -123 V/V
View Answer

Answer: c Explanation:

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Sanfoundry Global Education & Learning Series –

Electronic Devices and Circuits.

To practice all areas of Electronic Devices and Circuits,

here is complete set of 1000+ Multiple Choice Questions
and Answers.

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sanfoundry.com

BJT Amplifier Circuits Biasing

Questions and Answers
by Manish
2 minutes

This set of Electronic Devices and Circuits Multiple Choice

Questions & Answers (MCQs) focuses on “Biasing in BJT
Amplifier Circuits”.

(Q.1-Q.6) consider the figure shown below and answer the

questions that proceed.

1. For Vcc = 15V, R1 = 100 kΩ, R(E) = 3.9 kΩ, R(C) = 6.8
kΩ and ß = 100, determine the dc collector current for each
transistor.
a) 0.29 mA
b) 0.48 mA

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c) 0.96 mA
d) 1.92 mA
View Answer

Answer: c Explanation:

2. For Vcc = 15V, R1 = 100 kΩ, R(E) = 3.9 kΩ, R(C) = 6.8
kΩ and ß = 100, determine the dc collector voltage for each
transistor.
a) 4.25 V
b) 8.5 V
c) 12.75 V
d) 17 V
View Answer

Answer: b Explanation:

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3. Find R (in 1) for R (sig) = 5 kΩ.

a) 2.4 kΩ
b) 4.8 kΩ
c) 17.3 kΩ
d) 34.6 kΩ
View Answer

Answer: a
Explanation: It is the parallel combination of the 32 kΩ
resistor and 2.6 kΩ resistor respectively.

4. Find Vb1/Vsig for R(sig) = 5 kΩ.

a) 0.08 V/V
b) 0.16 V/V
c) 0.24 V/V
d) 0.32 V/V
View Answer

Answer; d Explanation:

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5. Find R (in 2).

a) 2.4 kΩ
b) 4.8 kΩ
c) 17.3 kΩ
d) 34.6 kΩ
View Answer

Answer: a
Explanation: It is the parallel combination of the 32 kΩ
resistor and 2.6 kΩ resistor respectively.

6. Find Vb2/Vb1.
a) -34 V/V
b) -51 V/V
c) – 68.1 V/V
d) -100 V/V
View Answer

Answer: c Explanation:

7. For Rl = 2 kΩ find Vo/Vb2.

a) -59.3 V/V
b) -29.7 V/V

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c) -89.1 V/V
d) None of the mentioned
View Answer

Answer: a Explanation:

8. Find the overall voltage gain.

a) 323 V/V
b) 646 V/V
c) 969 V/V
d) 1292 V/V
View Answer

Answer: d Explanation:

Sanfoundry Global Education & Learning Series –

Electronic Devices and Circuits.

To practice all areas of Electronic Devices and Circuits,

here is complete set of 1000+ Multiple Choice Questions
and Answers.

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sanfoundry.com

Spread Spectrum - Electronic

Devices and Circuits Questions
and Answers
by Manish
4-5 minutes

This set of Electronic Devices and Circuits Multiple Choice

Questions & Answers (MCQs) focuses on “Spread
Spectrum”.

(Q.1-Q.3) A pseudo-noise (PN) sequence is generated

using a feedback shift register of length m = 4. The chip
rate is 107 chips per second.

1. The PN sequence length is

a) 10
b) 12
c) 15
d) 18
View Answer

Answer: c
Explanation: The PN sequence length is N = 2m – 1 = 16 –
1 = 15.

2. The chip duration is

a) 1µs

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b) 0.1 µs
c) 0.1 ms
d) 1 ms
View Answer

Answer: b
Explanation: Tc = 1/(107) or 0.1 µs.

3. The period of PN sequence is

a) 1.5 µs
b) 15 µs
c) 6.67 ns
d) 0.67 ns
View Answer

Answer: b
Explanation: The period of the PN sequence is T = NTc =
15 x 0.1 = 1.5 s

4. A slow FH/MFSK system has the following parameters.

Number of bits per MFSK symbol = 4
Number of MFSK symbol per hop = 5
The processing gain of the system is
a) 13.4 dB
b) 37.8 dB
c) 6 dB
d) 26 dB
View Answer

Answer: d
Explanation: PG = Wc/Rs = 5 x 4 = 20 or 26 db.

5. A fast FH/MFSK system has the following parameters.

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Number of bits per MFSK symbol = 4

Number of pops per MFSK symbol = 4
The processing gain of the system is
a) 0 dB
b) 7 dB
c) 9 dB
d) 12 dB
View Answer

Answer: d
Explanation: PG = 4 x 4 = 16 or 12 db.

(Q.6-Q.7) A rate 1/2 convolution code with dfrec = 10 is

used to encode a data sequence occurring at a rate of 1
kbps. The modulation is binary PSK. The DS spread
spectrum sequence has a chip rate of 10 MHz.

6. The coding gain is

a) 7 dB
b) 12 dB
c) 14 dB
d) 24 dB
View Answer

Answer: a
Explanation: 0.5 x 10 = 5 or 7 db is the coding gain.

7. The processing gain is

a) 14 dB
b) 37 dB
c) 58 dB
d) 104 dB
View Answer

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Answer: b
Explanation: PG = (107)/(2 x 1000) = 5000 or 37 db.

(Q.8-Q.9) An FH binary orthogonal FSK system employs an

m 15 stage liner feedback shift register that generates an
ML sequence. Each state of the shift register selects one of
L non over lapping frequency bands in the hopping pattern.
The bit rate is 100 bits/s. The demodulator employ non
coherent detection.[/expand]

8. If the hop rate is one per bit, the hopping bandwidth

for this channel is
a) 6.5534 MHz
b) 9.4369 MHz
c) 2.6943 MHz
d) None of the mentioned
View Answer

Answer: a
Explanation: The length of the shift-register sequence is L =
2m – 1215 = 32767 bits
For binary FSK modulation, the minimum frequency
separation is 2/T, where 1/T is the symbol (bit) rate. The
hop rate is 100 hops/sec. Since the shift register has L
32767 states and each state utilizes a bandwidth of 2/T =
200 Hz, then the total bandwidth for the FH signal is 6.5534
MHz.

9. Suppose the hop rate is increased to 2 hops/bit and the

receiver uses square law combining the signal over two
hops. The hopping bandwidth for this channel is
a) 3.2767 MHz

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b) 13.1068 MHz
c) 26.2136 MHz
d) 1.6384 MHz
View Answer

Answer: b
Explanation: If the hopping rate is 2 hops/bit and the bit rate
is 100 bits/sec, then, the hop rate is 200 hops/sec. The
minimum frequency separation for orthogonality 2/T 400 Hz.
Since there are N 32767 states of the shift register and for
each state we select one of two frequencies separated by
400 Hz, the hopping bandwidth is 13.1068 MHz.

10. In a fast FH spread spectrum system, the information is

transmitted via FSK with non coherent detection. Suppose
there are N = 3 hops/bit with hard decision decoding of the
signal in each hop. The channel is AWGN with power
spectral density 0.5No and an SNR 20 ~13 dB (total SNR
over the three hops). The probability of error for this system
is
a) 0.013
b) 0.0013
c) 0.049
d) 0.0049
View Answer

Answer: b Explanation: The total SNR for three hops is 20 ~

13 dB. Therefore the SNR per hop is 20/3. The probability
of a chip error with non-coherent detection is

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Sanfoundry Global Education & Learning Series –

Electronic Devices and Circuits.

To practice all areas of Electronic Devices and Circuits,

here is complete set of 1000+ Multiple Choice Questions
and Answers.

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