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Wej Electronic Co.,Ltd.: MOSFET (N-Channel)

This document provides specifications for the 2N7002 N-Channel MOSFET transistor. It lists maximum ratings, electrical characteristics, and typical switching times. Key details include a drain-source breakdown voltage of 60V, on-resistance of 1-7.5 ohms, and turn-on and turn-off times of 20ns and 40ns respectively. The 2N7002 is suitable for use as a small signal switch with high saturation current capability.

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Ankur
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106 views3 pages

Wej Electronic Co.,Ltd.: MOSFET (N-Channel)

This document provides specifications for the 2N7002 N-Channel MOSFET transistor. It lists maximum ratings, electrical characteristics, and typical switching times. Key details include a drain-source breakdown voltage of 60V, on-resistance of 1-7.5 ohms, and turn-on and turn-off times of 20ns and 40ns respectively. The 2N7002 is suitable for use as a small signal switch with high saturation current capability.

Uploaded by

Ankur
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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RoHS

D.
2N7002

T
2N7002 MOSFET (N-Channel)

.,L
SOT-23

FEATURES
z High density cell design for low RDS(ON)

CO
1. GATE
z Voltage controlled small signal switch 2. SOURCE
z Rugged and reliable 3. DRAIN

z High saturation current capability

Marking: 7002

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

C
Symbol Parameter Value Units
VDS Drain-Source voltage 60 V
NI
ID Drain Current 115 mA
PD Power Dissipation 225 mW
RӨJA Thermal Resistance, junction to Ambient 556 ℃/W
TJ Junction Temperature 150 ℃
RO

Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Drain-Source Breakdown Voltage V(BR)DSS VGS=0 V, ID=10 μA 60


V
CT

Gate-Threshold Voltage Vth(GS) VDS=VGS, ID=250 μA 1 2.5


Gate-body Leakage lGSS VDS=0 V, VGS=±25 V ±80 nA
Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 80 nA
On-state Drain Current ID(ON) VGS=10 V, VDS=7 V 500 mA
E

VGS=10 V, ID=500mA 1 7.5


Drain-Source On-Resistance rDS(0n) Ω
VGS=5 V, ID=50mA 1 7.5
EL

Forward Trans conductance gfs VDS=10 V, ID=200mA 80 500 ms


VGS=10V, ID=500mA 0.5 3.75 V
Drain-source on-voltage VDS(on)
VGS=5V, ID=50mA 0.05 0.375 V
Diode Forward Voltage VSD IS=115mA, VGS=0 V 0.55 1.2 V
Input Capacitance Ciss 50
EJ

Output Capacitance COSS VDS=25V, VGS=0V, f=1MHz 25 pF


Reverse Transfer Capacitance CrSS 5
SWITCHING TIME
td(on) 20
W

Turn-on Time VDD=25 V, RL=50Ω


ID=500mA,VGEN=10 V ns
Turn-off Time td(off) 40
RG=25 Ω

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]


RoHS

D.
2N7002

T
Typical characteristics

.,L
CO
C
NI
RO
E CT
EL
EJ
W

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]


www.s-manuals.com

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