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Exam Format (Same As Exam 1)

The exam will follow the same format as Exam 1, consisting of true/false, multiple choice, and calculation problems testing concepts from lectures and homework. Students must sign an honor pledge and calculators may be used if they do not store information. The exam will cover all material since Exam 1, including specific chapters from the textbook and lecture slides. An equations sheet will be provided with common formulas and constants.

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Ralph Jason Alvarez
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78 views

Exam Format (Same As Exam 1)

The exam will follow the same format as Exam 1, consisting of true/false, multiple choice, and calculation problems testing concepts from lectures and homework. Students must sign an honor pledge and calculators may be used if they do not store information. The exam will cover all material since Exam 1, including specific chapters from the textbook and lecture slides. An equations sheet will be provided with common formulas and constants.

Uploaded by

Ralph Jason Alvarez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ECE 410, Spring 2008 Professor A.

Mason

Exam 2 Review

Exam Format (same as Exam 1)


~10 True/False: covering concepts and theory
~10 Multiple Choice: covering concepts and theory from lecture notes
Matching, fill in the blank, etc. type questions are possible substitutes for the above
~5 Problems: calculation problems that combine concepts learned in homework and class to test
your overall understanding of the material

Honor Pledge
You will be required to sign an honor pledge stating that you did not cheat or witness any
cheating. Your exam will not be graded unless the honor pledge is signed!

Calculators
Calculators will probably be allowed at the exam. However, you can not store any information
or equations in calculators. Simple function calculators are preferred.

Exam Coverage
All lecture notes and all topics covered in lecture since Exam 1.
Lecture Notes Ch7, Ch 11, Ch 12, Ch 13, Advanced Digital (slides 1-25); Homeworks 5-9.
Textbook chapters 7, 8 (parts), 11, 12, 13.
The exam will not cover material exclusive to lab assignments.

List of Topics
• stick diagrams
• the following for inverters, multi-input gates, and transmission gates
o voltage transfer characteristics & gate switching threshold (midpoint voltage)
o transient response; rise and fall times; propagation delays
o power consumption & activity coefficients
o transistor sizing for performance; beta scaling
• multi-cell layout; signal & power routing
• digital functional blocks
o buffers; multiplexers; decoders (active high/low); encoders
o latches & flip flops, especially CMOS DFF; flip flop timing & transistor sizing
o tri-states & C2MOS DFF
o registers, shift/rotate, barrel shifters & counters (state machines not on exam)
• adders: half adder, full adder, ripple-carry adders
• carry look-ahead adders; Manchester carry generation (pass gate circuits)
• multiplier & ALU basics (Booth encoding not on exam)
• types of memory; volatility; static vs. dynamic
• SRAM cells, cell analysis & arrays; multi-port SRAM
• DRAM cells, cell analysis & arrays
• ROM/PROM/EPROM/EEPROM/PLA basic operation and structure
• pseudo-nMOS, dynamic/domino, differential, pass-gate logic structure
• STI, LDD, SOI, BiCMOS technologies
ECE 410, Spring 2008 Professor A. Mason

Equations Sheet
The following equations will be provided for you on the exam. Only the following equations
and constants will be provided and you will be responsible for knowing what each variable
means and when to use each equation.
V=IR Q=CV
I=Q/t
n p = ni2 σ = q(μnn + μpp)

R = L/σA Jx = σ Ex

Cox = εox/tox Qc = -CG(VG-Vtn)

k ' n = μ n COX , βn = μnCox (W/L) Rn = 1 / βn [(VDD-Vtn)],


Rp = 1 / βp [(VDD-|Vtp|)]

(
I D = I S e VD VT
)
− 1 , Ψ = V ln⎛⎜ N A N D ⎞⎟
0 T ⎜ 2 ⎟
⎡ 2ε (Ψ0 + V R ) N D + N A ⎤
W =⎢ ⎥
1
2

⎝ ni ⎠ ⎣ q NDNA ⎦

⎡ 2ε (Ψ0 + V R ) ⎤ ⎡ 2ε (Ψ0 + V R ) ⎤
1 1 1
⎡ qεN A N D ⎤ 2⎛ ⎞ 2 2
C j = A⎢ ⎜ 1 ⎟ W ≅ xp = ⎢ , W ≅ xn = ⎢
⎥ ⎥ ⎥
⎣ 2(N A + N D ) ⎦ ⎜ Ψ +V ⎟
⎝ 0 R ⎠ ⎣ qN A ⎦ ⎣ qN D ⎦

CSB = Cj ASbot + Cjsw PSsw CDB = Cj ADbot + Cjsw CGS = ½ CGCGD = ½ CG


PDsw
tf = 2.2 τn, tr = 2.2 τp DRAM: th = (Cs / IL)(ΔVs)frefresh = 1 / 2th
tp = 0.35(τn + τp)

region nMOS equations pMOS equations


Cutoff ID = 0 ID = 0
Triode
ID =
μ n COX W
2 L
[2(V
GS − Vtn )VDS − VDS
2
] μC W
I D = n OX
2 L
[
2(VSG − Vtp )VSD − VSD
2
]
Saturation μ n COX W μ n COX W
ID = (VGS − Vtn ) 2 ID = (VSG − Vtp ) 2
(Active) 2 L 2 L

Constants DeMorgan’s Rules


kT = 0.026 eV, at room temperature (a * b)’ = a’ + b’
k = 8.62x10-5 eV/K, Boltzman’s constant (a + b)’ = a’ * b’
VT = 0.026 V, thermal voltage
q=1.6x10-19 C (coulombs) Useful Logic Properties
ni = 1.45x1010 cm-3, Si at room temperature 1+x=1 0+x=x
ε0 = 8.85x10-14 F/cm 1*x=x 0*x=0
εOX = (3.9) 8.85x10-14 F/cm x + x’ = 1 x * x’ = 0
εsi = (11.8) 8.85x10-14 F/cm a*a=a a+a=a
ab + ac = a (b+c)
Quadratic Equation: properties which can be proven
ax + bx + c = 0Æ x = − b ± b − 4ac
2
2 (a+b)(a+c) = a+bc a + a'b = a + b
2a a + ab +ac = a

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