Scribd
Upload
84 views2 pages

Ec8252ed Set3 PDF

The document contains an electronics and communication engineering exam from April 2018 for a second semester course on electronic devices. It includes three parts - Part A contains 10 short answer questions, Part B contains 5 long answer questions requiring explanations or derivations, and Part C contains 1 long answer question. The questions cover topics like PN junction diodes, transistor configurations, MOSFETs, JFETs, thyristors, optoelectronic devices, and power devices. The exam tests students' understanding of the operation, characteristics, and applications of various electronic components.

Uploaded by

Rajkumar Perumal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
84 views2 pages

Ec8252ed Set3 PDF

The document contains an electronics and communication engineering exam from April 2018 for a second semester course on electronic devices. It includes three parts - Part A contains 10 short answer questions, Part B contains 5 long answer questions requiring explanations or derivations, and Part C contains 1 long answer question. The questions cover topics like PN junction diodes, transistor configurations, MOSFETs, JFETs, thyristors, optoelectronic devices, and power devices. The exam tests students' understanding of the operation, characteristics, and applications of various electronic components.

Uploaded by

Rajkumar Perumal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

C.A.R.E.

GROUP OF INSTITUTIONS
B.E DEGREE MODEL EXAM – APRIL 2018
Electronics and Communication Engineering
Second Semester
EC8252 ELECTRONIC DEVICES
(Regulation 2017)

Time: Three hours maximum: 100 marks

Answer ALL questions

PART A (10 x 2=20 marks)

1. What is barrier potential?

2. Define Mass action law.

3. What is tunnelling phenomenon?

4. Compare between schottky diode and conventional diode.

5. Give the symbol, structure and equivalent circuit of DIAC.

6. Compare SCR and TRIAC.

7. What is recovery time? Give its types.

8. What is a metal semiconductor contact?

9. Draw the common base configuration.

10.What is JFET and gives its different mode of operation?

Answer ALL questions

PART B (5 × 13 = 65 marks)

11. (a) Derive the current equation of PN junction diode. (13)


or
(b) Describe the construction of PN junction diode. Explain the forward and reverse
characteristic of PN junction diode and obtain its VI characteristics curve. (13)

12. (a) (i) with a neat diagram explain about input and output characteristics of common emitter
configuration. (7)
(ii) Derive the h parameters for the CE configuration. (6)
or
(b) (i) Derive the expression of gummel poon model with neat circuit diagram. (7)
(ii) Explain the input and output characteristics of CB configuration. (6)

13. (a) Describe the working and characteristics of MOSFET, D-MOSFET and E-MOSFET. (13)
or
(b) (i) Write a short notes on FINFET. (6)
(ii) Explain drain and transfer characteristic of JFET. (7)
14. (a) (i)Explain the construction and volt ampere characteristics of tunnel diode. (7)
(ii) Explain the working and characteristics of Laser diode. (6)
or
(b) (i) Explain VI characteristics of Zener diode. (7)
(ii) Explain the VI characteristics of LDR. (6)

15. (a) ( i)Explain the operation and volt ampere characteristics of SCR. (7)
(ii) Describe the working of photo transistor. (6)
or
(b) (i) Explain the construction and operation of LCD. (6)
(ii) Explain the working and characteristics of DMOS. (7)

PART C (1x 15=15 marks)

16. (a) Explain Gallium Arsenide Device Gunn Diode?


or

(b) Explain Power MOSFET and Power BJT?

You might also like