Cypress Roadmap:

Flash Memory
Q1 2018
 NOR Flash Memory Family

2 Cypress Confidential Roadmap: Flash Memory - WIOB

 NOR Flash Memory Family Decoder
S 25 H S 512 T

Technology: J = 110-nm Floating Gate (FG) N = 110-nm MirrorBit® (MB) 1 = 63-nm DRAM (DR)
K = 90-nm FG P = 90-nm MB
L = 65-nm FG R, S = 65-nm MB
M = 50-nm FG T = 45-nm MB
Density: 008 = 8Mb 064 = 64Mb 512 = 512Mb 04G = 4Gb
016 = 16Mb 128 = 128Mb 01G = 1Gb
032 = 32Mb 256 = 256Mb 02G = 2Gb
Voltage: D = 2.5 V L = 3.0 V S = 1.8 V
Family: A = Standard ADP (Address-Data Parallel)
C = Burst Mode ADP (Address-Data Parallel)
F = Serial
G = Page Mode
H = High-Performance Serial
J = Simultaneous Read/Write ADP (Address-Data Parallel)
K = HyperBus™
N = Burst Mode Simultaneous Read/Write ADM (Address-Data Multiplexed)
P = Page Mode Simultaneous Read/Write ADP (Address-Data Parallel)
V = Burst Mode Simultaneous Read/Write ADM (Address-Data Multiplexed)
W = Burst Mode Simultaneous Read/Write ADP (Address-Data Parallel)
X = Burst Mode Simultaneous Read/Write AADM (Address-Address-Data Multiplexed)
Series: 25 = SPI 26 = HyperBus™ 27 = HyperRAM™
29 = Parallel 70 = Stacked Die 79 = Dual Quad SPI
Prefix: S

3 Cypress Confidential Roadmap: Flash Memory - WIOB

 NOR Flash Memory Product Portfolio – New Products
Family Interface Sector Size Series Voltage Densities Lead Tech 2018 2019 2020 2021 2022

S25HS-T 1.8V
Quad SPI 512Mb-4Gb 512Mb 45nm MB
High S25HL-T 3.0V
Hybrid
Performance S26HS-T 1.8V
HyperBus1 512Mb-4Gb 512Mb 45nm MB
S26HL-T 3.0V

S25FL-S 3.0V 128Mb-1Gb - 65nm MB

Hybrid
S25FS-S 1.8V 64Mb-1Gb - 65nm MB
QSPI QSPI
Uniform
S25FL-L 3.0V 64Mb-256Mb - 65nm FG
4kB

Dual Quad S79FS-S 1.8V

QSPI Hybrid 256Mb-1Gb - 65nm MB
SPI S79FL-S 3.0V

S26KS-S
HyperFlash HyperBus Hybrid 3.0V 128Mb-512b - 65nm MB
S26KL-S

S27KS-1 1.8V
HyperRAM HyperBus N/A 64Mb-256Mb - 63nm DR
S27KL-1 3.0V

Parallel Parallel Hybrid S29GL-T 3.0V 512Mb-2Gb - 45nm MB

1 JEDEC xSPI Compliant

Concept Samples Production EOL

4 Cypress Confidential Roadmap: Flash Memory - WIOB

 x8 Serial Memory Roadmap
(Prod) 2018 2019 2020 2021 2022
Product Family Density
[EOL] Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4
S26HS-T1 (1.8 V) 4Gb3 (TBD)
S26HL-T1 (3.0 V) 2Gb3 (TBD)
HyperFlash 1Gb (Q3’19)
45-nm MB2 512Mb (Q1’19)
S26KS-S (1.8 V)
512Mb
S26KL-S (3.0 V)
256Mb
HyperFlash
128Mb
65-nm MB2
S79FS-S (1.8 V) 1Gb4
Dual Quad SPI 512Mb4 (TBD)
65-nm MB2 256Mb4 (TBD)
S79FL-S (3.0 V) 1Gb4
Dual Quad SPI 512Mb4
65-nm MB2 256Mb4
S27KS-1 (1.8 V)
256Mb5 (TBD)
S27KL-1 (3.0 V)
128Mb5 (Q4’17)
HyperRAM
64Mb
63-nm DRAM
1 JEDEC xSPI Complainant
2 Hybrid Sector
3 Stacked Die
4 S79 Dual Quad SPI
5 S70 Series (Stacked Die)

Products supported by Concept Samples

Longevity Program unless noted
Production
5 Cypress Confidential Roadmap: Flash Memory - WIOB
EOL - LTB EOL - LTS
 x8 Memory Portfolio
HyperRAM HyperRAM Dual Quad SPI HyperFlash HyperFlash Dual Quad SPI HyperFlash HyperFlash
S27KL-1 S27KS-1 S79FL-S1 S26KL-S1 S26HL-T1, 2 S79FS-S1 S26KS-S1 S26HS-T1, 2
63-nm DR, 3.0 V 63-nm DR, 1.8 V 65-nm MB, 3.0 V 65-nm MB, 3.0 V 45-nm MB, 3.0 V 65-nm MB, 1.8 V 65-nm MB, 1.8 V 45-nm MB, 1.8 V

Density Density (S79))

Initial Access/DDR Clock SDR Clock / DDR Clock
* Temperature Range * Temperature Range

All parts supported by 4Gb5 4Gb5

Longevity Program 80 ns/200 MHz 80 ns/200 MHz
unless noted * I, A, V, B, M * I, A, V, B, M
2Gb5 2Gb5
≥256Mb

80 ns/200 MHz 80 ns/200 MHz

* I, A, V, B, M * I, A, V, B, M

1Gb Q418 1Gb Q319 1Gb Q418 1Gb Q319

133 MHz/80 MHz 80 ns/200 MHz 133 MHz/102 MHz 80 ns/200 MHz
* I, A, V, B * I, A, V, B, M * I, A, V, B * I, A, V, B, M
512Mb 512Mb Q218 512Mb Q119 512Mb 512Mb Q218 512Mb Q119

133 MHz/80 MHz 96 ns/166 MHz 80 ns/200 MHz 133 MHz/80 MHz 96 ns/166 MHz 80 ns/200 MHz
* I, A, V, B * I, A, V, B, N4, M4 * I, A, V, B, M * I, A, V, B * I, A, V, B, N4, M4 * I, A, V, B, M

256Mb3, 4 256Mb3, 4 256Mb 256Mb 256Mb 256Mb

36 ns/100 MHz 36 ns/166 MHz 133 MHz/80 MHz 96 ns/166 MHz 133 MHz/80 MHz 96 ns/166 MHz
* I, A, V, B * I, A, V, B * I, A, V, B * I, A, V, B, N4, M4 * I, A, V, B * I, A, V, B, N4, M4

128Mb3 128Mb3 128Mb 128Mb

64–128Mb

36 ns/100 MHz 36 ns/166 MHz 96 ns/166 MHz 96 ns/166 MHz

* I, A, V, B * I, A, V, B * I, A, V, B, N4, M4 * I, A, V, B, N4, M4

64Mb 64Mb
36 ns/100 MHz 36 ns/166 MHz
* I, A, V, B * I, A, V, B

1 HybridSector * I = Industrial: -40C to +85C

2 JEDEC xSPI Complainant A = Automotive, AEC-Q100 Grade 3: -40C to +85C
3 S70 series (stacked die) V = Industrial-plus: -40C to +105C
4 Contact Sales B = Automotive, AEC-Q100 Grade 2: -40C to +105C
5 Stacked Die N = Extended: -40C to +125C
M = Automotive, AEC-Q100 Grade 1: -40C to +125C
Concept Development Sampling Production
Status
Availability QQYY QQYY
6 Cypress Confidential Roadmap: Flash Memory - WIOB
EOL (Last-Time-Ship) QQYY
 x4 Serial NOR Flash Memory Roadmap
(Prod) 2018 2019 2020 2021 2022
Product Family Density
[EOL] Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4
S25HS-T (1.8 V) 4Gb3 (TBD)
S25HL-T (3.0 V) 2Gb3 (TBD)
QSPI 1Gb (Q3’19)
45-nm MB1 512Mb (Q1’19)

1Gb4
S25FS-S (1.8 V) 512Mb
QSPI 256Mb
65-nm MB1 128Mb
64Mb

S25FL-L (3.0 V) 256Mb

QSPI 128Mb
65-nm FG2 64Mb

1Gb4
S25FL-S (3.0 V)
512Mb
QSPI
256Mb
65-nm MB1
128Mb5

S25FL-P (3.0 V) 128Mb6 [Q3’18]

QSPI 64Mb [Q1’18]
90-nm MB1 32Mb [Q1’18]

S25FL1-K (3.0 V) 64Mb [Q1’18]

QSPI 32Mb [Q1’18]
90-nm FG2 16Mb [Q1’18]
1 HybridSector
2 Uniform Sector
3 Stacked die
4 S70 Series (stacked die
5 S25FL127S & S25FL128S
6 S25FL128P & S25FL129P

Products supported by Concept Samples

Longevity Program unless noted
Production
7 Cypress Confidential Roadmap: Flash Memory - WIOB
EOL - LTB EOL - LTS
 x4 Serial NOR Flash Memory Portfolio
QSPI QSPI QSPI QSPI QSPI
S25FL-L1 S25FL-S2 S25HL-T2 S25FS-S2 S25HS-T2
65-nm FG, 3.0 V 65-nm MB, 3.0 V 45-nm MB, 3.0 V 65-nm MB, 1.8 V 45-nm MB, 1.8 V

Density 4Gb3 4Gb3

SDR Clock/DDR Clock 166 MHz/102 MHz 166 MHz/102 MHz
* Temperature Range * I, A, V, B, M * I, A, V, B, M
All parts supported by 2Gb3 2Gb3
Longevity Program 166 MHz/102 MHz 166 MHz/102 MHz
unless noted * I, A, V, B, M * I, A, V, B, M
≥256Mb

1Gb4 Q418 Q319 1Gb4 Q418 Q319

1Gb 1Gb
133 MHz/80 MHz 166 MHz/102 MHz 133 MHz/80 MHz 166 MHz/102 MHz
* I, A, V, B, N, M * I, A, V, B, M * I, A, V, B, N, M * I, A, V, B, M
512Mb Q218 Q119 512Mb Q218 Q119
512Mb 512Mb
133 MHz/80 MHz 166 MHz/102 MHz 133 MHz/80 MHz 166 MHz/102 MHz
* I, A, V, B, N ,M * I, A, V, B, M * I, A, V, B, N, M * I, A, V, B, M
256Mb 256Mb 256Mb
133 MHz/66 MHz 133 MHz/80 MHz 133 MHz/80 MHz
* I, A, V, B, M * I, A, V, B, N, M * I, A, V, B, M

128Mb 128Mb5 128Mb

133 MHz/66 MHz 133 MHz/80 MHz 133 MHz/80 MHz
64–128Mb

* I, A, V, B, M * I, A, V, B, N, M * I, A, V, B, M
128Mb6
108 MHz/--
* I, A, V, B
64Mb 64Mb
108 MHz/54 MHz 133 MHz/80 MHz
* I, A, V, B, M * I, A, V, B, N, M
≤32Mb

1 Uniform Sector 4 S70 series (stacked die) * I = Industrial: -40C to +85C

2 Hybrid Sector 5 S25FL128S 133-MHz SDR 80-MHz DDR A = Automotive, AEC-Q100 Grade 3: -40C to +85C
3 Stacked die 6 S25FL127S 108-MHz SDR V = Industrial-plus: -40C to +105C
B = Automotive, AEC-Q100 Grade 2: -40C to +105C
N = Extended: -40C to +125C Concept Development Sampling Production
M = Automotive, AEC-Q100 Grade 1: -40C to +125C
Status
Availability QQYY QQYY
8 Cypress Confidential Roadmap: Flash Memory - WIOB
EOL (Last-Time-Ship) QQYY
 Parallel NOR Flash Memory Roadmap
(Prod) 2018 2019 2020 2021 2022
Product Family Density
[EOL] Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4
2Gb3
S29GL-T1 (3.0 V)
1Gb
45-nm MB
512Mb

2Gb3
1Gb
S29GL-S1 (3.0 V) 512Mb
65-nm MB 256Mb
128Mb
64Mb

S29GL-P1 (3.0 V) 256Mb

90-nm MB 128Mb

S29GL-N1 (3.0 V) 64Mb

110-nm MB 32Mb
128Mb
S29PL-J1, 2 (3.0 V)
64Mb
110-nm FG
32Mb

S29JL-J2 (3.0 V) 64Mb

110-nm FG 32Mb

S29AL-J (3.0 V) 16Mb

110-nm FG 8Mb

S29AS-J (1.8 V) 16Mb

110-nm FG 8Mb
1 Supports Page Mode
2 Supports simultaneous read/write operation
3 S70 series (stacked die)

Products supported by Concept Samples

Longevity Program unless noted
Production
9 Cypress Confidential Roadmap: Flash Memory - WIOB
EOL - LTB EOL - LTS
 Parallel NOR Flash Memory Portfolio
S29AS-J S29AL-J S29JL-J1 S29PL-J1, 2 S29GL-N2 S29GL-P2 S29GL-S2 S29GL-T2
110-nm FG, 1.8 V 110-nm FG, 3.0 V 110-nm FG, 3.0 V 110-nm FG, 3.0 V 110-nm MB, 3.0 V 90-nm MB, 3.0 V 65-nm MB, 3.0 V 45-nm MB, 3.0 V
Density
Initial/Page Access
* Temperature Range 2Gb3 2Gb3
110 ns/20 ns 110 ns/20 ns
All parts supported by * I, A, V, B * I, A, V, B, N
Longevity Program
≥256Mb

1Gb 1Gb
unless noted
100 ns/15 ns 100 ns/15 ns
* I, A, V, B * I, A, V, B, N
512Mb 512Mb
100 ns/15 ns 100 ns/15 ns
* I, A, V, B * I, A, V, B, N
256Mb 256Mb
90 ns/25 ns 90 ns/15 ns
*I * I, A, V, B

128Mb 128Mb 128Mb

64–128Mb

60 ns/20 ns 90 ns/25 ns 90 ns/15 ns

* I, A *I * I, A, V, B

64Mb 64Mb 64Mb 64Mb

55 ns/-- 55 ns/20 ns 90 ns/25 ns 70 ns/15 ns
* I, A * I, A * I, A * I, A, B

32Mb 32Mb 32Mb

60 ns/-- 55 ns/20 ns 90 ns/25 ns
* I, A * I, A * I, A
≤32Mb

16Mb 16Mb
70 ns/-- 55 ns/--
* I, A * I, A, N, M
8Mb 8Mb
70 ns/-- 55 ns/--
* I, A * I, A, N, M
1 Supports simultaneous read/write operation * I = Industrial: -40C to +85C
2 Supports Page Mode A = Automotive, AEC-Q100 Grade 3: -40C to +85C
3 S70 series (stacked die) V = Industrial-plus: -40C to +105C
B = Automotive, AEC-Q100 Grade 2: -40C to +105C
N = Extended: -40C to +125C Concept Development Sampling Production
M = Automotive, AEC-Q100 Grade 1: -40C to +125C Status
Availability QQYY QQYY
10 Cypress Confidential Roadmap: Flash Memory - WIOB
EOL (Last-Time-Ship) QQYY
 Burst NOR Flash Memory Roadmap
(Prod) 2018 2019 2020 2021 2022
Product Family Density
[EOL] Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4
512Mb
S29WS-P1 (1.8 V)
256Mb
90-nm MB
128Mb

S29NS-P2 (1.8 V)
512Mb
90-nm MB

256Mb
S29VS-R3 (1.8 V)
128Mb
65-nm MB
64Mb

256Mb
S29XS-R2 (1.8 V)
128Mb
65-nm MB
64Mb

S29CD-J1 (1.8 V) 32Mb

110-nm MB 16Mb

S29CL-J1 (3.0 V) 32Mb

110-nm MB 16Mb

1 ADP(Address Data Parallel) Burst

2 AADM (Address high, Address low, Data Multiplex) Burst
3 ADM (Address Data Multiplex) Burst

Products supported by Concept Samples

Longevity Program unless noted
Production
11 Cypress Confidential Roadmap: Flash Memory - WIOB
EOL - LTB EOL - LTS
 Burst NOR Flash Memory Portfolio
S29CL-J1 S29CD-J1 S29XS-R2 S29VS-R3 S29NS-P2 S29WS-P1
110-nm FG, 3.0 V 110-nm FG, 2.5 V 65-nm MB, 1.8 V 65-nm MB, 1.8 V 90-nm MB, 1.8 V 90-nm MB, 1.8 V

Density All parts supported by

Initial Access/SDR Clock Longevity Program
* Temp Range unless noted
≥256Mb

512Mb 512Mb
80 ns/83 MHz 80 ns/104 MHz
*W *W

256Mb 256Mb 256Mb

80 ns/108 MHz 80 ns/108 MHz 80 ns/104 MHz
* W, I * W, I *W

128Mb 128Mb 128Mb

64–128Mb

80 ns/108 MHz 80 ns/108 MHz 80 ns/104 MHz

* W, I * W, I *W

64Mb 64Mb
80 ns/108 MHz 80 ns/108 MHz
* W, I * W, I

32Mb 32Mb
54 ns/75 MHz 54 ns/75 MHz
≤32Mb

* I, A, N, M, H, T * I, A, N, M, H, T

16Mb 16Mb
54 ns/66 MHz 54 ns/66 MHz
* I, A, N, M, H, T * I, A, N, M, H, T

1 ADP(Address Data Parallel) Burst * W = Wireless: -25C to +85C

2 AADM (Address high, Address low, Data Multiplex) Burst I = Industrial: -40C to +85C
3 ADM (Address Data Multiplex) Burst A = Automotive, AEC-Q100 Grade 3: -40C to +85C
N = Extended: -40C to +125C
M = Automotive, AEC-Q100 Grade 1: -40C to +125C
T = Automotive, AEC-Q100 Grade 0: -40C to +150C

Concept Development Sampling Production

Status
Availability QQYY QQYY
12 Cypress Confidential Roadmap: Flash Memory - WIOB
EOL (Last-Time-Ship) QQYY
 KGD NOR Flash Memory Portfolio1
HyperFlash HyperFlash Quad SPI Quad SPI Parallel
3.0 V 1.8 V 3.0 V 1.8 V 3.0 V

Density Density Density

Initial Access/DDR Clock SDR Clock/DDR Clock Initial/Page Access
* Temperature Range * Temperature Range * Temperature Range

All parts supported by

Longevity Program
≥256Mb

unless noted GL-S 1Gb

100 ns/15 ns
* I, V

KL-S 512Mb KS-S 512Mb FL-S 512Mb GL-S 512Mb

96 ns/100 MHz 96 ns/166 MHz 133 MHz/80 MHz 100 ns/15 ns
* I, V, N * I, V, N * I, V * I, V

KL-S 256Mb KS-S 256Mb FL-L 256Mb FS-S 256Mb GL-S 256Mb
96 ns/100 MHz 96 n /166 MHz 133 MHz/66 MHz 133 MHz/80 MHz 90 ns/15 ns
* I, V, N * I, V, N * I, V, N * I, V * I, V

KL-S 128Mb Q418 KS-S 128Mb Q418 FL-L 128Mb FS-S 128Mb GL-S 128Mb
64–128Mb

96 ns/100 MHz 96 ns/66 MHz 133 MHz/66 MHz 133 MHz/80 MHz 90 ns / 15 ns
* I, V, N * I, V, N * I, V, N * I, V * I, V

FL-L 64Mb FS-S 64Mb

108 MHz/54 MHz 133 MHz/80 MHz
* I, V, N * I, V, N

AL-J 16Mb
55 ns/--
<64Mb

* I, V, N
AL-J 8Mb
55 ns/--
* I, V, N

1 Contact Sales for KGD datasheets * I = Industrial: -40C to +85C

V = Industrial-plus: -40C to +105C
N = Extended: -40C to +125C

Concept Development Sampling Production

Status
Availability QQYY QQYY
13 Cypress Confidential Roadmap: Flash Memory - WIOB
EOL (Last-Time-Ship) QQYY
 NAND Flash Memory Family

14 Cypress Confidential Roadmap: Flash Memory - WIOB

 NAND Flash Memory Family Decoder
S 34 M L 08G 2
Technology: 1 = 4x-nm 2 = 32-nm 3 = 16-nm
Density: 01G = 1Gb 04G = 4Gb 16G = 16Gb
02G = 2Gb 08G = 8Gb
Voltage: L = 3.0 V S = 1.8 V
Family: M = NAND (Address-Data Multiplexed)
S = SecureNAND (Address-Data Multiplexed)
Series: 34 = NAND

Prefix: S

15 Cypress Confidential Roadmap: Flash Memory - WIOB

 NAND Flash Memory Roadmap
(Prod) 2018 2019 2020 2021 2022
Product Family Density
[EOL] Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4
16Gb
S34MS-2 (1.8 V) 8Gb
32-nm SLC 4Gb
ONFI1 1.0 2Gb
1Gb
S34MS-1 (1.8 V) 4Gb [Q2’19]
4x-nm SLC 2Gb [Q2’19]
ONFI1 1.0 1Gb [Q2’19]
S34SL-2 (3.0 V) 4Gb
32-nm SLC 2Gb
ONFI1 1.0 1Gb
S34ML-3 (3.0 V) 16Gb (TBD)
16-nm SLC 8Gb (TBD)
ONFI1 1.0 4Gb (Q3’18)
16Gb
S34ML-2 (3.0 V) 8Gb
32-nm SLC 4Gb
ONFI1 1.0 2Gb
1Gb
8Gb [Q2’19]
S34ML-1 (3.0 V)
4Gb [Q2’19]
4x-nm SLC
2Gb [Q2’19]
ONFI1 1.0
1Gb [Q2’19]
1 Open NAND Flash Interface

Products supported by Concept Samples

Longevity Program unless noted
Production
16 Cypress Confidential Roadmap: Flash Memory - WIOB
EOL - LTB EOL - LTS
 SLC NAND Flash Memory Portfolio
S34ML-11 S34ML-23 S34ML-31 S34SL-23, 4 S34MS-11 S34MS-23
4x-nm, 3.0 V 32-nm, 3.0 V 16-nm, 3.0 V 32-nm, 3.0 V 4x-nm, 1.8 V 32-nm, 1.8 V
SLC, ONFI 1.02 SLC, ONFI 1.0 SLC, ONFI 1.0 SLC, ONFI 1.0 SLC, ONFI 1.0 SLC, ONFI 1.0

Density; Bus Width

Interface Bandwidth
* Temperature Range

All parts supported by

8–16Gb

Longevity Program
unless noted 16Gb; x8 16Gb; x8 16Gb; x8
40 MBps 40 MBps 40 MBps
* I, A5, V5, B5 * I, A, V, B * I, A5, V5, B5

Q219
8Gb; x8 8Gb; x8 8Gb; x8 8Gb; x8
40 MBps 40 MBps 40 MBps 40 MBps
* I, A, V5, B * I, A, V, B * I, A, V, B * I, A, V, B

Q219 Q118 Q318 Q219

4Gb; x8/16 4Gb; x8/16 4Gb; x8 4Gb; x8 4Gb; x8 4Gb; x8/16
40 MBps 40 MBps 40 MBps 40 MBps 40 MBps 40 MBps
* I, A, V , B * I, A, V, B * I, A, V, B * I, V * I, A5, V, B * I, A, V, B
1–4Gb

Q219 Q219
2Gb; x8/16 2Gb; x8/16 2Gb; x8 2Gb; x8/16 2Gb; x8/16
40 MBps 40 MBps 40 MBps 40 MBps 40 MBps
* I, A, V, B * I, A5, V5, B5 * I, V5 * I, A5, V, B * I, A5, V5, B5

Q219 Q219
1Gb; x8 1Gb; x8/16 1Gb; x8 1Gb; x8/16 1Gb; x8/16
40 MBps 40 MBps 40 MBps 40 MBps 40 MBps
* I, A, V, B * I, A, V, B * I, V * I, A5, V, B * I, A, V, B

1 1-bit error-correcting code (ECC) * I = Industrial: -40°C to +85°C

2 Open NAND Flash Interface A = Automotive, AEC-Q100 Grade 3: -40°C to +85°C
3 4-bit error-correcting code (ECC) V = Industrial-plus: -40°C to +105°C
4 SecureNAND™: Cypress’ SLC NAND Flash Memory B = Automotive, AEC-Q100 Grade 2: -40°C to +105°C
with full-capacity volatile and nonvolatile block protection
5 Contact Sales

Concept Development Sampling Production

Status
Availability QQYY QQYY
17 Cypress Confidential Roadmap: Flash Memory - WIOB
EOL (Last-Time-Ship) QQYY
 Flash and RAM Memory MCP

18 Cypress Confidential Roadmap: Flash Memory - WIOB

 Flash and RAM Memory MCP Decoder
S 71 N S 512 R D

RAM Density: A = 16Mb B = 32Mb C = 64Mb D = 128Mb E = 256Mb

Flash Technology: N = 110-nm MirrorBit (MB) P = 90-nm MB R, S = 65-nm MB
Flash Density: 032 = 32Mb 128 = 128Mb 512 = 512Mb
064 = 64Mb 256 = 256Mb 01G = 1Gb
Voltage: L = 3.0 V S = 1.8 V
Family: G = Page Mode
K = HyperFlash
N = Burst Mode Simultaneous Read / Write ADM (Address-Data Multiplexed)
V = Burst Mode Simultaneous Read / Write ADM (Address-Data Multiplexed)
W = Burst Mode Simultaneous Read / Write ADP (Address-Data Parallel)
X = Burst Mode Simultaneous Read / Write AADM (Address-Address-Data Multiplexed)
Series: 71, 98 = NOR Flash + pSRAM 72 = NOR Flash + DRAM
Prefix: S

19 Cypress Confidential Roadmap: Flash Memory - WIOB

 Flash and RAM Memory MCP Roadmap
Product Family Flash / RAM (Prod) 2018 2019 2020 2021 2022
Flash / RAM Density [EOL] Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4
S71KS-S (1.8 V) 512Mb/64Mb
HyperFlash/ 256Mb/64Mb (TBD)
HyperRAM 128Mb/64Mb (TBD)
S71KL-S (3.0 V) 512Mb/64Mb
HyperFlash/ 256Mb/64Mb
HyperRAM 128Mb/64Mb (TBD)

S98GL-N (3.0 V)
64Mb/32Mb
110-nm MB/pSRAM

S72XS-R (1.8 V)
256Mb/256Mb
65-nm MB/DRAM
S72VS-R (1.8 V)
256Mb/256Mb
65-nm MB/DRAM
256Mb/128Mb
256Mb/64Mb
S71VS-R (1.8 V)
128Mb/64Mb
65-nm MB/pSRAM
128Mb/32Mb
64Mb/32Mb
S71NS-P (1.8 V)
512Mb/128Mb
90-nm MB/pSRAM
S71WS-P (1.8 V)
256Mb/64Mb
90-nm MB/pSRAM

Products supported by Concept Samples

Longevity Program unless noted
Production
20 Cypress Confidential Roadmap: Flash Memory - WIOB
EOL - LTB EOL - LTS
 Flash and RAM Memory MCP Portfolio
S71WS-P1 S71NS-P2 S71VS-R2 S72VS-R3 S72XS-R3 S98GL-N4 S71KL-S5 S71KS-S5
90-nm MB, 90-nm MB, 65-nm MB, 65-nm MB, 65-nm MB, 110-nm MB, 65-nm MB, 65-nm MB,
1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 3.0 V 3.0 V 1.8 V

Flash Density All parts supported

by Longevity
RAM Density Program unless
* Temperature Range noted
≥256Mb

512Mb 256Mb 512Mb 512Mb

128Mb 256Mb6 64Mb8 64Mb8
*W *I * I, A, V, B * I, A, V, B

256Mb 256Mb 256Mb

128Mb 256Mb 256Mb7
*W *W * W, I

256Mb 256Mb 256Mb 256Mb

64Mb 64Mb 64Mb8 64Mb8
*W *W * I, A, V, B * I, A, V, B

128Mb 128Mb 128Mb

64Mb 64Mb8 64Mb8
*W * I, A, V, B * I, A, V, B
64–128Mb

128Mb
32Mb
*W

64Mb 64Mb
32Mb 32Mb
*W *I

1 ADP (Address Data Parallel) Burst 5 HyperFlash

* W = Wireless: -25C to +85C
2 ADM (Address Data Multiplex) Burst 6 DRAM Version 2 I = Industrial: -40C to +85C
3 AADM (Address High, Address Low, Data Multiplex) Burst 7 DRAM Version 1 A = Automotive, AEC-Q100 Grade 3: -40C to +85C
4 Parallel, Page Mode 8 HyperRAM V = Industrial-plus: -40C to +105C
B = Automotive, AEC-Q100 Grade 2: -40C to +105C

Concept Development Sampling Production

Status
Availability QQYY QQYY
21 Cypress Confidential Roadmap: Flash Memory - WIOB
EOL (Last-Time-Ship) QQYY
 x8 Serial Memory Packages
SOIC-16 BGA24 BGA24
Family Interface Series Density Device KGD
300 mil 8 x 8 mm/5 x 5 Ball 8 x 6 mm/5 x 5 Ball
512Mb S26HS512T CF CF CF
1Gb S26HS01GT CF CF
HS-T
2Gb S26HS02GT CF
4Gb S26HS04GT CF
512Mb S26HL512T CF CF CF
1Gb S26HL01GT CF CF
HL-T
2Gb S26HL02GT CF
HyperFlash 4Gb S26HL04GT CF
128Mb S26KS128S  CF
KS-S 256Mb S26KS256S  CF
HyperBus 512Mb S26KS512S  CF
128Mb S26KL128S  CF
KL-S 256Mb S26KL256S  CF
512Mb S26KL512S  CF
64Mb S26KS0641  CF
KS-1 128Mb S70KS1281 
256Mb S70KS2561 
HyperRAM
64Mb S26KL0641  CF
KL-1 128Mb S70KL1281 
256Mb S70KL2561 
FS-S 256Mb S79FS256S
Dual 512Mb S79FS512S
Quad 1Gb S79FS01GS 
QSPI QSPI
FL-S 256Mb S79FL256S 
Dual 512Mb S79FL512S 
Quad 1Gb S79FL01GS 
CF = Contact Factory

22 Cypress Confidential Roadmap: Flash Memory - WIOB

 x4 Serial NOR Flash Memory Packages
BGA24 BGA24 BGA24
Family Interface Series SOIC-8 SOIC-8 SOIC-16 WSON WSON WSON
Density Device 8 x 8 mm 8 x 6 mm 8 x 6 mm KGD
150 mil 208 mil 300 mil 4 x 4 mm 6 x 5 mm 8 x 6 mm
5 x 5 Ball 5 x 5 Ball 4 x 6 Ball
512Mb S25HS512T CF CF CF CF
1Gb S25HS01GT CF CF CF
HS-T
2Gb S25HS02GT CF
4Gb S25HS04GT CF
512Mb S25HL512T CF CF CF CF
1Gb S25HL01GT CF CF CF
HL-T
2Gb S25HL02GT CF
4Gb S25HL04GT CF
64Mb S25FS064S    
128Mb S25FS128S  CF     CF
FS-S 256Mb S25FS256S     
512Mb S25FS512S     CF
1Gb S70FS01GS  
128Mb S25FL127S     
QSPI QSPI
128Mb S25FL128S    
FL-S 256Mb S25FL256S    
512Mb S25FL512S    
1Gb S70FL01GS  
32Mb S25FL032P       
64Mb S25FL064P     
FL-P
128Mb S25FL128P  
128Mb S25FL129P    
64Mb S25FL064L       CF
FL-L 128Mb S25FL128L      CF
256Mb S25FL256L     CF
16Mb S25FL116K      
FL1-K 32Mb S25FL132K       
64Mb S25FL164K      
CF = Contact Factory UD = Under Development

23 Cypress Confidential Roadmap: Flash Memory - WIOB

 Parallel NOR Flash Memory Packages
48-Ball 48-Ball 56-Ball 64-Ball 64-Ball
48-Pin 56-Pin
Family Density Device FBGA FBGA BGA BGA Fortified BGA KGD
TSOP TSOP
(0.8-mm pitch) (0.5-mm pitch) (0.8-mm pitch) (0.8-mm pitch) (1.0-mm pitch)
512Mb S29GL512T   
GL-T 1Gb S29GL01GT   
2Gb S70GL02GT 
64Mb S29GL064S    
128Mb S29GL128S    
256Mb S29GL256S    
GL-S
512Mb S29GL512S    
1Gb S29GL01GS   
2Gb S70GL02GS 
128Mb S29GL128P   
GL-P
256Mb S29GL256P   
32Mb S29GL032N     
GL-N
64Mb S29GL064N     
32Mb S29PL032J  
PL-J 64Mb S29PL064J  
128Mb S29PL127J   
32Mb S29JL032J  
JL-J
64Mb S29JL064J   
8Mb S29AL008J   
AL-J
16Mb S29AL016J    
8Mb S29AS008J   
AS-J
16Mb S29AS016J    

24 Cypress Confidential Roadmap: Flash Memory - WIOB

 Burst NOR Flash Memory Packages
44-Ball 64-Ball 84-Ball 80-Ball
80-Pin
Family Density Device FBGA BGA Fortified BGA FBGA KGD
PQFP
(0.5-mm pitch) (0.5-mm pitch) (0.8-mm pitch) (1.0-mm pitch)

128Mb S29WS128P 

WS-P 256Mb S29WS256P 

512Mb S29WS512P 

NS-P 512Mb S29NS512P 

64Mb S29VS064R 

VS-R 128Mb S29VS128R 

256Mb S29VS256R 

64Mb S29XS064R 

XS-R 128Mb S29XS128R 

256Mb S29XS256R 

16Mb S29CD016J   
CD-J
32Mb S29CD032J  

16Mb S29CL016J  
CL-J
32Mb S29CL032J  

25 Cypress Confidential Roadmap: Flash Memory - WIOB

 SLC NAND and Secure NAND Flash Memory Packages
63-Ball 67-Ball
48-Pin
Family Density Device BGA BGA
TSOP
(0.8-mm pitch) (0.8-mm pitch)
1Gb S34MS01G2   
2Gb S34MS02G2   
MS-2 4Gb S34MS04G2  
8Gb S34MS08G2 
16Gb S34MS16G2 
1Gb S34MS01G1 
MS-1 2Gb S34MS02G1  
4Gb S34MS04G1  
4Gb S34ML04G3  
ML-3 8Gb S34ML08G3  
16Gb S34ML16G3  
1Gb S34ML01G2   
2Gb S34ML02G2   
ML-2 4Gb S34ML04G2  
8Gb S34ML08G2  
16Gb S34ML16G2  
1Gb S34ML01G1  
2Gb S34ML02G1  
ML-1
4Gb S34ML04G1  
8Gb S34ML08G1  
1Gb S34SL01G2 
SL-2 2Gb S34SL02G2 
4Gb S34SL04G2 

26 Cypress Confidential Roadmap: Flash Memory - WIOB

 Flash and RAM Memory MCP Packages
BGA24 56-Ball 56-Ball 84-Ball 130-Ball 133-Ball
Flash RAM
Family 8 x 6 mm Very Thin FBGA FBGA FBGA BGA FBGA
Density Density
5 x 5 Ball (0.5-mm pitch) (0.8-mm pitch) (0.8-mm pitch) (0.65-mm pitch) (0.5-mm pitch)

128Mb 64Mb 
S71KS-S 256Mb 64Mb 
512Mb 64Mb 
128Mb 64Mb 
S71KL-S 256Mb 64Mb 
512Mb 64Mb 
S98GL-N 64Mb 32Mb 
S72XS-R 256Mb 256Mb 
S72VS-R 256Mb 256Mb 
256Mb 128Mb 
256Mb 64Mb 
S71VS-R 128Mb 64Mb 
128Mb 32Mb 
64Mb 32Mb 
S71NS-P 512Mb 128Mb 
S71WS-P 256Mb 64Mb 

27 Cypress Confidential Roadmap: Flash Memory - WIOB

28 Cypress Confidential
001-97268 *L Roadmap: Flash Memory - WIOB