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NTE3089 Optoisolator AC Input, Silicon NPN Phototransistor Output

The NTE3089 is an optoisolator with an AC or polarity insensitive input using two inverse parallel gallium arsenide LEDs coupled to a silicon phototransistor output in a 6-lead DIP package. It features fast switching speeds, built-in reverse polarity protection, high isolation voltage and resistance, and is compatible with integrated circuits. It has maximum ratings for the LED forward current and power dissipation, and for the phototransistor collector voltage, current and power dissipation.

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Alejandro Herrera Malque
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45 views2 pages

NTE3089 Optoisolator AC Input, Silicon NPN Phototransistor Output

The NTE3089 is an optoisolator with an AC or polarity insensitive input using two inverse parallel gallium arsenide LEDs coupled to a silicon phototransistor output in a 6-lead DIP package. It features fast switching speeds, built-in reverse polarity protection, high isolation voltage and resistance, and is compatible with integrated circuits. It has maximum ratings for the LED forward current and power dissipation, and for the phototransistor collector voltage, current and power dissipation.

Uploaded by

Alejandro Herrera Malque
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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NTE3089

Optoisolator
AC Input, Silicon NPN
Phototransistor Output
Description:
The NTE3089 consists of two gallium arsenide LEDs connected in inverse parallel and coupled with
a silicon phototransistor in a 6-Lead DIP type package.

Features:
D AC or Polarity Insensitive Inputs
D Fast Switching Speeds
D Built-In Reverse Polarity Input Protection
D High Isolation Voltage
D High Isolation Resistance
D I/O Compatible with Integrated Circuits

Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)


Infrared Emitting Diode (LED)
Continuous Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Peak Forward Current (Pulse Width = 1μs, 330pps), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1A
Power Dissipation (TA = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33mW/°C
Phototransistor
Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C
Power Dissipation (TA = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.7mW/°C
Total Device
Steady-State Isolation Voltage (Input-to-Output)
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1060V
Surge Isolation Voltage (Input-to-Output)
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500V
RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1770V
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +150°C
Lead Temperature (During Soldering for 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +250°C
Note 1. TC indicates Collector lead temperature 1/32” from case.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Infrared Emitting Diode (LED)
Forward Voltage VF IF = ±10mA - - 1.5 V
Capacitance CJ VR = 0, f = 1MHz - - 100 pF
Phototransistor
Collector-Base Breakdown Voltage V(BR)CBO IC = 100μA, IF = 0 70 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IF = 0 30 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100μA, IF = 0 5 - - V
Collector Dark Current ICEO VCE = 10V, IF = 0 - - 100 nA
Coupled
DC Current Transfer Ratio CTR VCE = 10V, IF = ±10mA 20 - - %
Collector-Emitter Saturation Voltage VCE(sat) IC = 0.5mA, IF = ±10mA - - 0.4 V
Isolation Resistance R(I-O) V(I-O) = 500V, Note 2 100 - - GΩ

Note 2. Tests of Input-to-Output isolation current resistance, and capacitance are performed with the
input terminals (diode) shorted together and the output terminals (transistors) shorted together.

Pin Connection Diagram

LED 1 Anode/ 1 6 Base


LED 2 Cathode

LED 1 Cathode/ 2 5 Collector


LED 2 Anode

N.C. 3 4 Emitter

6 5 4 .260
(6.6)
Max
1 2 3

.070 (1.78) Max

.350 (8.89) .300 (7.62)


Max

.200 (5.08)
Max .350
(8.89)
Max

.085 (2.16) Max .100 (2.54)

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