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Lab No: 1: Experiment

This experiment aims to determine the base-emitter voltage, current gain, and input impedance of a power transistor. The current gain (β) is defined as the ratio of collector current to base current. As power increases, the assumed constant values of current gain and base-emitter voltage are found to vary. By measuring the base and collector currents at different power levels using multimeters, the effect on current gain in high power applications can be investigated. The input impedance, which is also surprisingly low, can be calculated by measuring the input voltage.

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kibrom atsbha
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86 views

Lab No: 1: Experiment

This experiment aims to determine the base-emitter voltage, current gain, and input impedance of a power transistor. The current gain (β) is defined as the ratio of collector current to base current. As power increases, the assumed constant values of current gain and base-emitter voltage are found to vary. By measuring the base and collector currents at different power levels using multimeters, the effect on current gain in high power applications can be investigated. The input impedance, which is also surprisingly low, can be calculated by measuring the input voltage.

Uploaded by

kibrom atsbha
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Lab Experiment No : 1

Objective:
“Determine by calculation or measurement the base-emitter voltage,
current gain and input impedance of power transistor.”

Theory:
The current gain of a bipolar junction transistor (BJT) is defined as the
ratio of output current to the input current.

β = IC / IB

We tend to think of this current gain and the base-emitter voltage


(0.6V for silicon ) being constant values for a particular transistor .As soon
as you start to look into higher power applications of the bipolar junction
transistors you find that this is not quite true .

Two multimeters both on DC current range will be used to measure


base and collector currents at medium and high values to investigate the
effect on β in high power applications .

One of the transistor will be then be re-configured to measure the


input voltage to allow the calculation of the input impedance ,which should
also be found to be surprisingly low.
Apparatus:
 D-3000 trainer
 Connecting wires
 Ammeter
 Voltmeter

Procedure :
 On the trainer connect a shorting link between sockets 11.1 & 11.2 .
 Connect multimeter 1 on DC current range to sockets 11.3 ( positive )
and 2.5 (common) to monitor the collector current of TR1, and
multimeter 2 also on DC current range to sockets 1.2 (positive) and 2.2
(common) to monitor the base current.
 Switch on the module power supplies.
 Vary the setting of potentiometer VR1 and note that this controls the
brightness of the lamp.
 Turn VR1 fully clockwise to set the base voltage of TR1 maximum
positive .Note the values of collector current (IC) and base current (IB)
flowing.
 Turn VR1 counter-clockwise to find the minimum value of base current
to maintain the transistor in saturation (maximum collector current).
Observation Table:

IB IC VBE β Input imp


(µA) (mA) (V) (KΩ)
40.2 4.02 0.81 100 20.149

63.6 6.38 0.82 104.2 12.89

84.6 8.65 0.83 102.12 9.81

103 10.3 0.83 100 8.05

120 12 0.84 100 7

Conclusion:

I concluded from this experiment that the collector current and


the base emitter voltage of the BJT is depends on the base current hence it
is clearly seen in the table that when base current is increase in µA then
collector current also increase in mA.

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