MDD3752 – P-Channel Trench MOSFET

MDD3752
P-Channel Trench MOSFET, -40V, -43A, 17mΩ

General Description Features

The MDD3752 uses advanced MagnaChip’s Trench  VDS = -40V
MOSFET Technology to provided high performance in on-  ID = -43A @VGS = -10V
state resistance, switching performance and reliability.  RDS(ON)
< 17mΩ @ VGS = -10V
Low RDS(ON), Low Gate Charge can be offering superior < 25mΩ @ VGS = -4.5V
benefit in the application.

Applications
 Inverters
 General purpose applications

Absolute Maximum Ratings (TC =25o)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS -40 V
Gate-Source Voltage VGSS ±20 V
o
TC=25 C 43 A
Continuous Drain Current (Note 2) o
ID
TC=100 C 27 A
Pulsed Drain Current IDM -90 A
o
TC=25 C 50
Power Dissipation o
PD W
TC=100 C 20
Single Pulse Avalanche Energy (Note 3) EAS 128 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~+150 C

Thermal Characteristics

Characteristics Symbol Rating Unit

Thermal Resistance, Junction-to-Ambient (Note 1) RθJA 40 o
C/W
Thermal Resistance, Junction-to-Case RθJC 2.5

November 2008. Version 1.0 1 MagnaChip Semiconductor Ltd.

 MDD3752 – P-Channel Trench MOSFET
Ordering Information

Part Number Temp. Range Package Packing RoHS Status

MDD3752RH -55~150oC D-PAK Tape & Reel Halogen Free

Electrical Characteristics (TJ =25oC unless otherwise noted)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = -250μA, VGS = 0V -40 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250μA -1.0 -2.0 -3.0
Zero Gate Voltage Drain Current IDSS VDS = -32V, VGS = 0V - -1
μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
VGS = -10V, ID = -20A - 13 17
Drain-Source ON Resistance RDS(ON) mΩ
VGS = -4.5V, ID = -10A 19 25
Forward Transconductance gFS VDS = -10V, ID = -20A 40 - S
Dynamic Characteristics
Total Gate Charge Qg - 44.1 -
VDD = -20V, ID = -20A,
Gate-Source Charge Qgs - 8.6 - nC
VGS = -10V
Gate-Drain Charge Qgd - 9.3 -
Input Capacitance Ciss - 2088 -
VDS = -20V, VGS = 0V,
Reverse Transfer Capacitance Crss - 168 - pF
f = 1.0MHz
Output Capacitance Coss - 290 -
Turn-On Delay Time td(on) - 17.6 -
Turn-On Rise Time tr VGS = -10V ,VDD = -20V, - 17.8 -
ns
Turn-Off Delay Time td(off) ID = -1A, RGEN=6.0Ω - 59.0 -
Turn-Off Fall Time tf - 19.8 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = -20A, VGS = 0V - - 1.2 V
Reverse Recovery Time trr IS = -20A, di/dt=100A/us - 40 - ns
Reverse Recovery Charge Qrr - 40 - nC

Note :
1. Surface mounted RF4 board with 2oz. Copper.
2. PD is based on TJ(MAX)=150OC, PD(TC=25OC) is based on Rθ JC.
3. Starting TJ=25°C, L=1mH, IAS=-16A VDD=-20V, VGS=-10V

November 2008. Version 1.0 2 MagnaChip Semiconductor Ltd.

 MDD3752 – P-Channel Trench MOSFET
3.0
25
2.8
VGS = -10V
-8V
VGS = -3.5V
-4.5V 2.6

Drain-Source On-Resistance
-4.0V -4V
20
2.4
-ID, Drain Current [A]

-4.5V
2.2

Normalized
15 2.0

1.8 -5V

1.6
10
1.4 -6V
1.2 -8V
5
1.0
-3.0V
0.8 VGS = -10V
0 0.6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100
-VDS, Drain-Source Voltage [V]
-ID, Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.8
120
※ Notes :
1. VGS = -10 V
1.6 2. ID = -20 A
Drain-Source On-Resistance

100
Drain-Source On-Resistance
RDS(ON), (Normalized)

1.4
80
RDS(ON) [mΩ ],

1.2
60

1.0
40

0.8
TA = 25 ℃

20

0.6
-50 -25 0 25 50 75 100 125 150
0
o 2 4 6 8 10
TJ, Junction Temperature [ C]
VGS, Gate to Source Volatge [V]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

2
20 10
※ Notes : ※ Notes :
VDS = -10V VGS = 0V
-IS, Reverse Drain Current [A]

16
ID, Drain Current [A]

12
1
10

TA=25 ℃

8
TA=125 ℃

25℃

4
0
10

0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VGS, Gate-Source Voltage [V] -VSD, Source-Drain voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

November 2008. Version 1.0 3 MagnaChip Semiconductor Ltd.

 MDD3752 – P-Channel Trench MOSFET
10 3.0n
Ciss = Cgs + Cgd (Cds = shorted)
※ Note : ID = -20A Coss = Cds + Cgd
Crss = Cgd
2.5n
8
-VGS, Gate-Source Voltage [V]

VDS = -20V Ciss

2.0n

Capacitance [F]
6

1.5n

4
1.0n
※ Notes ;
2 1. VGS = 0 V
500.0p Coss 2. f = 1 MHz

Crss
0 0.0
0 10 20 30 40 50 0 10 20 30 40
QG, Total Gate Charge [nC] -VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

3 50
10
Operation in This Area
is Limited by R DS(on)

2 40
10
100 s
-ID, Drain Current [A]

1 ms
-ID, Drain Current [A]

10 ms
10
1 30
100 ms
DC

10
0 20

-1
10 10
Single Pulse
RthJC=2.5 /W
℃

TC=25℃

-2
10 0
10
-1
10
0
10
1
10
2 25 50 75 100 125 150

-VDS, Drain-Source Voltage [V] TC, Case Temperature [ ] ℃

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case
Temperature

0
10

D=0.5
Zθ JC(t), Thermal Response

0.2

0.1
※ Notes :
-1 0.05 Duty Factor, D=t1/t2
10
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
0.02 RΘ JC=2.5 /W
℃

single pulse

0.01

-2
10
-4 -3 -2 -1 0 1
10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response Curve

November 2008. Version 1.0 4 MagnaChip Semiconductor Ltd.

 MDD3752 – P-Channel Trench MOSFET
Physical Dimensions

2 Leads, DPAK (TO252)

Dimensions are in millimeters unless otherwise specified

November 2008. Version 1.0 5 MagnaChip Semiconductor Ltd.

 MDD3752 – P-Channel Trench MOSFET

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

November 2008. Version 1.0 6 MagnaChip Semiconductor Ltd.