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MOS Assignment 2

This document outlines 6 assignments on advanced MOSFET modeling that are due on February 22nd at 4 pm. The assignments involve calculating properties of semiconductor samples including equilibrium carrier concentrations, resistivity, current density, band gap, dopant concentration and Fermi level positions. They also involve determining characteristics of p-n junctions such as built-in potential, depletion layer width and maximum electric field under various bias conditions.

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Ma Seenivasan
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44 views

MOS Assignment 2

This document outlines 6 assignments on advanced MOSFET modeling that are due on February 22nd at 4 pm. The assignments involve calculating properties of semiconductor samples including equilibrium carrier concentrations, resistivity, current density, band gap, dopant concentration and Fermi level positions. They also involve determining characteristics of p-n junctions such as built-in potential, depletion layer width and maximum electric field under various bias conditions.

Uploaded by

Ma Seenivasan
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Advanced MOSFET Modeling

Assignment – 2

Last date for submission: Feb. 22nd, 4 pm.

1. In a uniformly doped silicon sample, the electron and hole components of current
are equal in an applied electric field. Calculate the equilibrium electron and hole
concentrations, the net doping and the sample resistivity at 300K.

2. An intrinsic sample of Ge has a resistivity of 60 ohms.cm. Calculate the value of


current density in an applied field of 10 mV/cm if 1013 donors/cm3 and 4 × 1012
acceptors are introduced. Take μ n =4200 cm2/V.sec and μ p =2000 cm2/V.sec.

3. A sample of intrinsic semiconductor has a resistance of 10 ohms at 364 K and 100


ohms at 333K. Assuming that mobilities are almost constant at this temperature
range, calculate the band gap of the semiconductor.

4. The resistivity of a silicon sample (ρo) is measured at 300K. The sample is then
remelted and doped with an additional 5 × 1016 arsenic atoms/cm3. A new crystal is
grown that has a resistivity of 0.1 ohm.cm and is n-type. Determine the type and
concentration of dopant in the original sample and value of ρo.

5. An abrupt silicon p-n junction has N A = 1017 /cm3 on one side and N D = 1015 /cm3
on the other. Assuming complete ionization, calculate the Fermi level positions at
300K in the p and n regions. Also draw the equilibrium band diagram for the
junction and determine the contact potential Vbi from the diagram.

6. A silicon step junction is doped with N D = 1015 /cm3 on the n-side and N A = 1017
/cm3 on the p-side. At room temperature, calculate
(a) the built-in potential
(b) the depletion layer width and maximum electric field at zero bias
(c) the depletion layer width and the maximum electric field at a reverse bias
of 5 volts
(d) the depletion layer width and the maximum electric field at a forward bias
of 0.5 volt.

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