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2SA1102

The 2SA1102 is a silicon PNP power transistor in a TO-3PN package. It is intended for use in audio power amplifiers and DC-DC converters, where it can handle high current and dissipate high power due to its high current capability. The transistor has a minimum DC current gain of 50 and transition frequency of 20 MHz when operated within its maximum ratings, which include collector-base and collector-emitter voltage ratings of -80V and collector current of -6A.

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127 views

2SA1102

The 2SA1102 is a silicon PNP power transistor in a TO-3PN package. It is intended for use in audio power amplifiers and DC-DC converters, where it can handle high current and dissipate high power due to its high current capability. The transistor has a minimum DC current gain of 50 and transition frequency of 20 MHz when operated within its maximum ratings, which include collector-base and collector-emitter voltage ratings of -80V and collector current of -6A.

Uploaded by

isaiasva
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1102

DESCRIPTION
·With TO-3PN package
·Complement to type 2SC2577
·High current capability
·High power dissipation

APPLICATIONS
·Audio power amplifer applications
·DC-DC converters

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base

3 Emitter Fig.1 simplified outline (TO-3PN) and symbol

Absolute maximum ratings(Ta=℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -80 V

VCEO Collector-emitter voltage Open base -80 V

VEBO Emitter-base voltage Open collector -6 V

IC Collector current -6 A

PC Collector power dissipation TC=25℃ 60 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


Inchange Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1102

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -80 V

VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V

VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.8 V

ICBO Collector cut-off current VCB=-80V; IE=0 -100 μA

IEBO Emitter cut-off current VEB=-6V; IC=0 -100 μA

hFE DC current gain IC=-2A ; VCE=4V 50

fT Transition frequency IE=1A ; VCE=-12V 20 MHz

2
Inchange Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1102

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

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