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2 Sa 1491

This document provides product specifications for the 2SA1491 silicon PNP power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3PN package and pin layout, absolute maximum ratings, electrical characteristics like breakdown voltage and gain, switching times, and the package outline dimensions. The transistor is intended for audio and general purpose applications.

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167 views

2 Sa 1491

This document provides product specifications for the 2SA1491 silicon PNP power transistor from SavantIC Semiconductor. It includes descriptions of the TO-3PN package and pin layout, absolute maximum ratings, electrical characteristics like breakdown voltage and gain, switching times, and the package outline dimensions. The transistor is intended for audio and general purpose applications.

Uploaded by

isaiasva
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1491

DESCRIPTION
·With TO-3PN package
·Complement to type 2SC3855

APPLICATIONS
·Audio and general purpose

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings(Ta= )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -140 V

VCEO Collector-emitter voltage Open base -140 V

VEBO Emitter-base voltage Open collector -6 V

IC Collector current -10 A

IB Base current -4 A

PC Collector power dissipation TC=25 100 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1491

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -140 V

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V

ICBO Collector cut-off current VCB=-140V; IE=0 -100 µA

IEBO Emitter cut-off current VEB=-6V; IC=0 -100 µA

hFE DC current gain IC=-3A ; VCE=-4V 50

fT Transition frequency IC=0.5A ; VCE=-12V 20 MHz

Switching times

ton Turn-on time 0.30 µs

IC=-5A;RL=12A
ts Storage time IB1=- IB2=-0.5A 0.90 µs
VCC=60V

tf Fall time 0.20 µs

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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1491

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1491

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