Simulation Analysis of 10 Stage Delay Line Using CNT Transistor at 32nm
Simulation Analysis of 10 Stage Delay Line Using CNT Transistor at 32nm
Volume 3, Issue 6, June – 2018 International Journal of Innovative Science and Research Technology
ISSN No:-2456-2165
Simulation & Analysis of 10-Stage Delay Line using
CNT Transistor at 32nm
Vikash Sharma1, Ambarish Singh Tomar2, Nikhil Saxena3
PG Scolar1,PG Scolar2, Assistant professor 3
Department of Electronics & Communication Engineering, ITM Gwalior 123.
Abstract:- In this article the equivalent study of discrete solution to replacement CMOS-based integrated circuit
parameters of delay line by using CMOS and CNT technology, as the performance increase of
techniquesare done. After the comparative study the conventional transistors witnessed during the last decades will
results exhibited that the CNT displayed better results as arrive at its ultimate limits in the coming future [3].
compared to the CMOS 10 stages delay line at 32nm
technology design. Two parameters propagation delay and Its present progress is largely dominated by the materials
average power consumption are also calculated sciencecommunity due to
andcompared. After the comparison of parameters it is many still existing materials-related obstacles for realizing
found that CNT delay line has better results as compared practically competitive transistors.
to CMOS delay line. The power consumption is also Compared to grapheme, carbon nanotube provides better
decreased in the Delay line by using CNT as compared to properties for building field-effect
CMOS delay line. During simulation it is found that the transistors, and thus, has higher chances for eventually
propagation delay of CNT delay line reduced by 4.06% becoming a production technology.
then CMOS delay line. Similarly it is also measured during So, in this work it is used carbon nanotube field effect
simulation that avg. power consumption of CNT delay line transistor in place of silicon based transistor [4]. Basically
reduced by 20.99% as compared to CMOS delay line. leakage current and power is the power and current when
However Voltage using during both type of material is circuit is in switch off condition. In CNT technique we are
similar and fixed at 0.9v. using Carbon Nano Tube in place of silicon type
semiconductor [5]. By using CNT leakage current, leakage
Keyword:- Carbon nanotube, CMOS, Delay line, Power power and propagation delay can be magnify and performance
consumption, Propagation delay etc. of circuit can be enhanced. In this article it has been proved
that CNT transistor is a better replacement of CMOS transistor
I. INTRODUCTION [8].
In this article, it describes a delay line circuit which can II. LITERATURE
be used for different types of applications. Specifically, we
have built closed loop when is able to create various clock CMOS based delay line:-
phases and delays with low jitter, short locking time, and wide
lock range. To achieve this design goal, several techniques and
algorithms are used in proposed design.
CMOS is a term of performance limit which are
specified the potential applications are identified with
efficiency electronic properties along with physical modeling. Fig 1:- 10 stage delay line
On for constructing IC. In 10 stages delay line we are using 10
NOT gates to make a delay line with NMOS and PMOS to It is a delay line using 10 not gate. In figure1 all NOT
make CMOS transistor [1]. It is use 20 transistors and in 10 gate connecting in series and give same output with some
stage CMOS delay line. In the CMOS delay line the required propagation delay.
semiconductor material used that is silicon material. By using
of this material and performance of various type of parameters The design conditions of these delay factors are also
such as voltage, leakage power, leakage current and discussed and correlated for the universal delay line circuits.
propagation delay can be enhanced up to a limit [2]. It is found As a conclusion, the main discovering of this article are
that reducing those parameters like as leakage current and focused and discussing the different and most efficient high-
power is major issue in present days.CNTFET is one possible resolution delay line techniques [6].
IJISRT18JU419 www.ijisrt.com 622
Volume 3, Issue 6, June – 2018 International Journal of Innovative Science and Research Technology
ISSN No:-2456-2165
Fig 2:- 10 Stage CMOS delay line
It is represents the 10 stage CMOS based delay line at in figure 2 at Vout is similar as input but has some
transistor level.In this figure 2 there are 10 inverter connected propagation delay. As It is a 10 stage delay line, so user can
in series connection and current flow through the input is Vin. use 10 different delay values at individual output stage of each
Input passing through those 10 inverter stages connected in invertor output node. That’s why this circuit is known as 10
series connection and then output found at output node thrown stage invertor delay line.
Fig 3:- Simulated waveform of 10 stage CMOS delay line
Parameters 10 stage CMOS Here create a CMOS based delay line diagram,With a 10
delay line NMOS and 10 PMOS transistor shown in figure2. Figure 3
Leakage current 10.5274e-12Amp shown the output waveform of 10 stage delay line. Now
Leakage power 9.3692e-12Watt display in figure 3 it is clear that output will has same shape as
Average power 4.1258e-08Watt input but with some required delay. Performance parameters
Propagation 5.2016e-008Sec of that delay line are given in table 1 with simulated results.
Delay
Table 1. CMOS delay line simulation result
IJISRT18JU419 www.ijisrt.com 623
Volume 3, Issue 6, June – 2018 International Journal of Innovative Science and Research Technology
ISSN No:-2456-2165
III. PROPOSED CIRCUIT
10 Stage CNT delay line:-
In this article we have worked on CNT based delay line
in which silicon based CMOS semiconductor replace by
Carbon. By using this technique we can reduce leakage
current and power. Carbon has many preferences over silicon
semiconductor material. It has high tensile strength as
comparison to silicon. It has high electrical conductivity in
comparison to silicon. It also has big thermal conductivity and
it is good electron field ammeters and many more. Because of
these properties in this article silicon material is replaced by
carbon.
Fig 6:- Simulated waveform of 10 stage CNT delay line
IV. RESULTS COMPARISON
Fig 4:- Converting CMOS to CNT
Parameters 10 stage CMOS delay 10 stage CNT delay
The symbols of CNTFET are shown in figure 4.
line line
Leakage 10.5274e-12Amp 9.000e-13Amp
Current
Leakage 9.3692e-12Watt 8.100e-13Watt
Power
Average 4.1258e-08Watt 3.2594e-08Watt
Power
Propagation 5.2016e-008Sec 4.99e-008Sec
Delay
Table 2. CMOS delay line simulated result compared
with CNT delay line simulated result.
10 stage CMOS and CNT delay line are simulated with
the help of SPICE tool. After simulation it is found that
Fig 5:- 10 Stage CNT delay line leakage current in CMOS 10 stage delay line is 10.5274A and
in the CNT 10 stage delay line it is 9.000e-13A, leakage
Here we represent a 10 stage CNT based delay line power of CMOS 10 stage delay line is 9.3692W and in the
display in figure 5. In this figure 5 there are 10 inverter CNT 10 stage delay line is 8.100e-13W, average power
connected with series connection, 20 CNT transistors are used consume in CMOS 10 stage delay line is 4.1258e-08W and in
and voltage given at the input is Vin. Simulated waveform of the CNT 10 stage delay line is 3.2594e-08W and propagation
proposed circuit (figure 5) is display in figure delay found in CMOS 10 stage delay line is 5.2016e-008s and
in the CNT 10 stage delay line is 4.99e-008s.
V. CONCLUSION
CNT transistors have many advantages over silicon
transistor. It has been also verified in this article that the
performance parameters like leakage current, leakage power,
propagation delay and avg. power of CNT 10 stage delay line
IJISRT18JU419 www.ijisrt.com 624
Volume 3, Issue 6, June – 2018 International Journal of Innovative Science and Research Technology
ISSN No:-2456-2165
have improved value then the CMOS based 10 stage delay
line. For further improvements in results we can use various
leakage rebate techniques like MTCMOS, SVL, AVL,
LECTOR etc. It is also possible to reduce transistor stage for
more improvements in results.
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