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Lab Manual

This document describes experiments to characterize semiconductor diodes and zener diodes. It provides the components, theory of operation, procedures, circuit diagrams, and expected observations for plotting the VI characteristics of silicon and germanium diodes, and a zener diode. The goals are to plot the static and dynamic characteristics, calculate resistances, and observe the differences between forward and reverse biasing, and normal versus zener breakdown operation. Proper resistor values are selected to protect the diodes based on their voltage and current ratings.

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bond 777
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132 views

Lab Manual

This document describes experiments to characterize semiconductor diodes and zener diodes. It provides the components, theory of operation, procedures, circuit diagrams, and expected observations for plotting the VI characteristics of silicon and germanium diodes, and a zener diode. The goals are to plot the static and dynamic characteristics, calculate resistances, and observe the differences between forward and reverse biasing, and normal versus zener breakdown operation. Proper resistor values are selected to protect the diodes based on their voltage and current ratings.

Uploaded by

bond 777
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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1.

CHARACTERISTICS OF A SEMICONDUCTOR DIODE

AIM:
1) To plot the VI characteristics of silicon and germanium diode.
2) Calculate static and dynamic resistance.

COMPONENTSREQUIRED:
Diodes- 1N4001 (1), OA79 (1); Resistors-100Ω (1), Voltmeter-(0-10V) (1), Voltmeter-(0-30V)
(1); Ammeter-(0-100mA) (1), DC power supply.

THEORY:

The basic property and use of diode is that it acts as a switch depending on the voltage applied.
In practical cases, the characteristics vary depending on material used. For silicon diodes, the
voltage drop is 0.7V and for germanium diode, it is 0.3V. Static characteristics are the
characteristics shown when dc voltage is applied. While dynamic characteristics is that shown
when ac voltage is applied.

When diode is in forward biased, it offers a finite resistance in the circuit. Static or dc resistance
is the ratio of dc voltage across diode to dc current flowing through it. Dynamic resistance or ac
resistance of the diode at a point is the reciprocal of the slope of the tangent at that point.

Dynamic resistance= (change in voltage)/ (resulting change in current)

Fig: schematic symbol of Semiconductor diode

3
Fig: diode characteristics
PROCEDURE:
1. Identify the anode and cathode of the diode using a multimeter. Set up the circuit on the
breadboard as shown. Vary the supply voltage from 0 to 10V.Take voltmeter and
ammeter readings for both forward and reverse biased states. Plot accordingly on the
graph sheet.
2. To measure forward static resistance, consider a point on forward characteristics and
note corresponding voltage and current. The ratio of voltage to current is the static
resistance. To measure the dynamic resistance, for a particular dc current, find out the
slope at the point corresponding to that current.

DESIGN:
Silicon diode characteristics:
From data sheet, maximum current that 1N4001 diode can withstand is 1A.Resistance 'R' is used
to ensure diode safety.

Where, V is the maximum voltage applied to the diode.


I is the maximum current flow through the diode.

4
10  0.7
R  93 100
So, 100mA

CIRCUIT DIAGRAM:
1) FORWARD CHARACTERISTIC

REVERSE CHARECTERISTICS (for Ge)

5
OBSERVATION TABLE:
1) FORWARD CHARACTERISTICS

Si Ge

V(V) I(mA) V(V) I(mA)

Reverse characteristics
Ge
V(V) I(µA)

6
2. ZENER DIODE CHARACTERISTICS

AIM:
1)To plot the reverse characteristics of zener diode.
2) Calculate the dynamic resistance.

COMPONENTS REQUIRED:
Zener diode-SZ5.6 (1); Resistance-470(1); DC source-(0-10V)Voltmeter – (0-10V);
Ammetre(0-10mA), rheostat -1K.

THEORY:
Zener diodes are special kind of diodes designed to operate in the break down region without
damaging the device. When a diode is heavily doped, its depletion layer becomes very narrow.
When the applied reverse bias voltage across diode is increased, electric field across the
depletion layer becomes very intense and electrons get pulled out from covalent bonds
generating electron-hole pairs. Thus heavy reverse current flows. This phenomenon is called
zener break down.

Fig: Schematic Symbol of Zener Diode

7
Fig: zener diode characteristics

PROCEDURE:
1. Wire the circuit as shown, after testing the components.
2. Vary the input voltage and note the ammeter readings and plot reverse characteristics on
a graph sheet with voltage along X axis and current along Y axis in third quadrant.

3. Calculate the dynamic resistance by taking the ratio of change in current at a point on the
graph after break down point.

DESIGN:

The zener current is 10mA, Maximum voltage is 10V

R  V max  5.6  440  470


10mA

8
CIRCUIT DIAGRAM:

OBSERVATION TABLE:
V(V) I(mA)

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