IRGP4790PbF
IRGP4790-EPbF
Insulated Gate Bipolar Transistor
VCES = 650V
  C
 
 
IC = 90A, TC =100°C

tSC 5.5µs, TJ(max) = 175°C E

G E C
C G
VCE(ON) typ. = 1.7V @ IC = 75A E G
n-channel IRGP4790PbF  IRGP4790‐EPbF 
Applications TO‐247AC  TO‐247AD 
 Industrial Motor Drive
 UPS G C E
 Solar Inverters Gate Collector Emitter
 Welding

Features Benefits
Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications
5.5µs Short Circuit SOA
Rugged Transient Performance
Square RBSOA
Maximum Junction Temperature 175°C Increased Reliability
Positive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation
Lead-Free, RoHs compliant Environmentally friendly

Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRGP4790PbF TO-247AC Tube 25 IRGP4790PbF
IRGP4790-EPbF TO-247AD Tube 25 IRGP4790-EPbF

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 650 V
IC @ TC = 25°C Continuous Collector Current 140
IC @ TC = 100°C Continuous Collector Current 90
A 
ICM Pulse Collector Current, VGE=15V 225
ILM Clamped Inductive Load Current, VGE=20V  300
VGE Continuous Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 455
W
PD @ TC = 100°C Maximum Power Dissipation 230
TJ Operating Junction and -40 to +175
TSTG Storage Temperature Range
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) C
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RJC Thermal Resistance Junction-to-Case  ––– ––– 0.33
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– °C/W
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––

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IRGP4790PbF/IRGP4790-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 650 — — V VGE = 0V, IC = 100µA 
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.65 — V/°C VGE = 0V, IC = 5.0mA (25°C-175°C)
— 1.7 2.0 V IC = 75A, VGE = 15V, TJ = 25°C
VCE(on) Collector-to-Emitter Saturation Voltage
— 2.1 — IC = 75A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 5.5 — 7.4 V VCE = VGE, IC = 2.1mA
VGE(th)/TJ Threshold Voltage Temperature Coeff. — -20 — mV/°C VCE = VGE, IC = 2.1mA (25°C-150°C)
gfe Forward Transconductance — 47 — S VCE = 50V, IC = 75A, PW = 20µs
— 1.0 25 µA VGE = 0V, VCE = 650V
ICES Collector-to-Emitter Leakage Current
— 1.0 — mA VGE = 0V, VCE = 650V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
Qg Total Gate Charge (turn-on) — 140 210 IC = 75A
Qge Gate-to-Emitter Charge (turn-on) — 50 80 nC VGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 60 90 VCC = 400V
Eon Turn-On Switching Loss — 2.5 3.4
Eoff Turn-Off Switching Loss — 2.2 3.0 mJ   IC = 75A, VCC = 400V, VGE=15V
Etotal Total Switching Loss — 4.7 6.4 RG = 10, L = 200µH, TJ = 25°C
td(on) Turn-On delay time — 50 70
tr Rise time — 70 90 Energy losses include tail & diode
ns  reverse recovery 
td(off) Turn-Off delay time — 200 225
tf Fall time — 60 80
Eon Turn-On Switching Loss — 3.9 —
Eoff Turn-Off Switching Loss — 2.8 — mJ  IC = 75A, VCC = 400V, VGE=15V
Etotal Total Switching Loss — 6.7 —
RG = 10, L = 200µH, TJ = 175°C
td(on) Turn-On delay time — 50 —
tr Rise time — 70 — Energy losses include tail & diode
ns reverse recovery  
td(off) Turn-Off delay time — 240 —
tf Fall time — 70 —
Cies Input Capacitance — 4300 — VGE = 0V
Coes Output Capacitance — 230 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 120 — f = 1.0MHz
TJ = 175°C, IC = 300A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 520V, Vp ≤ 650V
VGE = +20V to 0V
TJ = 150°C,VCC = 400V, Vp ≤ 650V
SCSOA   Short Circuit Safe Operating Area   5.5  —  —  µs  
VGE = +15V to 0V

Notes:
 VCC = 80% (VCES), VGE = 20V.
 R is measured at TJ of approximately 90°C.
 Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
 Maximum limits are based on statistical sample size characterization.
 Pulse width limited by max. junction temperature.
 Values influenced by parasitic L and C in measurement.

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IRGP4790PbF/IRGP4790-EPbF
140
For both:
Duty cycle : 50%
120 Tj = 175°C
Tcase = 100°C
Gate drive as specified
100 Power Dissipation = 208.3W
Load Current ( A )

Square Wave:
80 VCC

60 I

40 Diode as specified

20
0.1 1 10 100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)

160 500

140
400
120

100
300
Ptot (W)
IC (A)

80

60 200

40
100
20

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC (°C) TC (°C)

Fig. 2 - Maximum DC Collector Current vs. Fig. 3 - Power Dissipation vs.

Case Temperature Case Temperature
1000 1000

100
10µsec 100
IC (A)

IC (A)

10 100µsec

1msec 10
1
Tc = 25°C DC
Tj = 175°C
Single Pulse
0.1 1
1 10 100 1000 10000 10 100 1000
VCE (V) VCE (V)

Fig. 4 - Forward SOA Fig. 5 - Reverse Bias SOA

TC = 25°C; TJ ≤ 175°C; VGE = 15V TJ = 175°C; VGE = 20V

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IRGP4790PbF/IRGP4790-EPbF
300 300
VGE = 18V VGE = 18V
250 VGE = 15V 250 VGE = 15V
VGE = 12V VGE = 12V
VGE = 10V VGE = 10V
200 200
VGE = 8.0V VGE = 8.0V
ICE (A)

ICE (A)
150 150

100 100

50 50

0 0
0 2 4 6 8 10 0 2 4 6 8 10
V CE (V) V CE (V)

Fig. 6 - Typ. IGBT Output Characteristics Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs TJ = 25°C; tp = 20µs
300 12
VGE = 18V
250 VGE = 15V 10
VGE = 12V ICE = 38A

200 VGE = 10V 8 ICE = 75A

VGE = 8.0V ICE = 150A
V CE (V)
ICE (A)

150 6

100 4

50 2

0 0
0 2 4 6 8 10 5 10 15 20
V CE (V) V GE (V)

Fig. 8 - Typ. IGBT Output Characteristics Fig. 9 - Typical VCE vs. VGE
TJ = 175°C; tp = 20µs TJ = -40°C
12 12

10 10
ICE = 38A ICE = 38A
8 ICE = 75A 8 ICE = 75A
ICE = 150A ICE = 150A
V CE (V)

V CE (V)

6 6

4 4

2 2

0 0
5 10 15 20 5 10 15 20
V GE (V) V GE (V)

Fig. 10 - Typical VCE vs. VGE Fig. 11 - Typical VCE vs. VGE
TJ = 25°C TJ = 175°C

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IRGP4790PbF/IRGP4790-EPbF
225 12

180 10

8
135

Energy (mJ)
EON
ICE (A)

6
90
TJ = 25°C
4
TJ = 175°C EOFF
45
2

0 0
2 4 6 8 10 12 14 16 0 25 50 75 100 125 150
V GE (V)
IC (A)

Fig. 12 - Typ. Transfer Characteristics Fig. 13 - Typ. Energy Loss vs. IC

VCE = 50V; tp = 20µs TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
1000 11

10

tdOFF 9

8
Swiching Time (ns)

Energy (mJ)

7
tF
100 6 EON
5
tdON
4
EOFF
tR
3

2
10 0 25 50 75 100
0 50 100 150
Rg ()
IC (A)
Fig. 14 - Typ. Switching Time vs. IC Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V
10000 24 400

Tsc
20 Isc 330
Swiching Time (ns)

1000
tdOFF 16 260
Current (A)
Time (µs)

tF
12 190
tR
100

8 120
tdON

4 50
10
8 10 12 14 16 18
0 20 40 60 80 100 120
VGE (V)
R G ()

Fig. 16 - Typ. Switching Time vs. RG Fig. 17 - VGE vs. Short Circuit Time
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V VCC = 400V; TC = 150°C

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IRGP4790PbF/IRGP4790-EPbF
10000 16

Cies 14 VCES = 400V

VGE, Gate-to-Emitter Voltage (V)

VCES = 300V
12
1000
Capacitance (pF)

10

Coes 6
100
Cres 4

10 0
0 100 200 300 400 500 0 20 40 60 80 100 120 140 160
V CE (V) Q G, Total Gate Charge (nC)
Fig. 18 - Typ. Capacitance vs. VCE Fig. 19 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 75A

D = 0.50
Thermal Response ( Z thJC )

0.1
0.20
0.10 Ri (°C/W) i (sec)
0.05 R1 R2 R3 R4
R1 R2 R3 R4 0.0125052 0.000036
0.01 J C
0.02 J C
1 2 3 4
0.0722526 0.000151
0.01 1 2 3 4
0.1389474 0.005683
Ci= iRi
Ci= iRi
0.1056000 0.029339
0.001
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case

Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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IRGP4790PbF/IRGP4790-EPbF

L 80 V +
DUT VCC - DUT
0
VCC
1K Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

diode clamp /
DUT

L
4X

DC VCC

DUT DUT / VCC

DRIVER
Rg

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

C force

100K

4X D1 22K
C sense
DC VCC
DUT
G force 0.0075µF
DUT

E sense

E force

Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit

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IRGP4790PbF/IRGP4790-EPbF

600 120 600 120

tf tr
TEST
500 100 500 CURRENT 100

400 80 400 80
90% ICE
300 60 300 60
VCE (V)

VCE (V)
ICE (A)

ICE (A)
90% ICE
200 40 200 40
10% VCE

100 20 100 20
10% ICE 10% ICE 10% VCE

0 0 0 0

Eoff Loss Eon Loss

-100 -20 -100 -20
-0.5 0 0.5 1 -0.5 0 0.5
time(µs) time (µs)

Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4

600 600

500 500
VCE
400 400

300 300
Ice (A)
Vce (V)

ICE
200 200

100 100

0 0

-100 -100
-5 0 5 10
time (µs)

Fig. WF3 - Typ. S.C. Waveform

@ TJ = 150°C using Fig. CT.3

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IRGP4790PbF/IRGP4790-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

Notes: This part marking information applies to devices produced after 02/26/2001

EXAMPLE: THIS IS AN IRFPE30

WITH ASSEMBLY PART NUMBER
LOT CODE 5657 INTERNATIONAL
ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30

IN THE ASSEMBLY LINE "H" LOGO 135H

56 57
DATE CODE
ASSEMBLY YEAR 1 = 2001
Note: "P" in assembly line position
indicates "Lead-Free" LOT CODE WEEK 35
LINE H

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRGP4790PbF/IRGP4790-EPbF
TO-247AD Package Outline (Dimensions are shown in millimeters (inches))

TO-247AD Part Marking Information

E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y PART N U M BER
LO T C O D E 5657 IN T E R N A T IO N A L
ASSEM B LED O N W W 35, 2000 R E C T IF IE R
IN T H E A S S E M B L Y L IN E "H " LO G O 035H
56 57
D A TE C O D E
ASSEM B LY YE A R 0 = 2 0 0 0
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e " LO T C O D E W EEK 35
L IN E H

TO-247AD package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRGP4790PbF/IRGP4790-EPbF

Qualification Information†
Qualification Level Industrial
(per JEDEC JESD47F)††
Moisture Sensitivity Level TO-247AC N/A
TO-247AD N/A
RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Revision History
Date Comments
 Updated Temperature Coeff. of Breakdown Voltage from “0.11V/C” to “0.65 V/C” on page 2 .
8/22/2014
Updated IC vs. TC graph Fig.2 to match page1 spec data on page 3.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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