2

The Power Diode

Ali I. Maswood, Ph.D. 2.1 Diode as a Switch.................................................................................... 15

School of EEE 2.2 Properties of PN Junction ........................................................................ 15
Nanyang Technological
University, Nanyang Avenue,
2.3 Common Diode Types............................................................................. 17
Singapore 2.4 Typical Diode Ratings.............................................................................. 17
2.4.1 Voltage Ratings • 2.4.2 Current Ratings
2.5 Snubber Circuits for Diode ....................................................................... 19
2.6 Series and Parallel Connection of Power Diodes ........................................... 19
2.7 Typical Applications of Diodes .................................................................. 22
2.8 Standard Datasheet for Diode Selection ...................................................... 24
References ............................................................................................. 25

2.1 Diode as a Switch In the figure, the forward characteristic is expressed as

a threshold voltage Vo and a linear incremental or slope
Among all the static switching devices used in power electron- resistance, r. The reverse characteristic remains the same over
ics (PE), the power diode is perhaps the simplest. Its circuit the range of possible leakage currents irrespective of voltage
symbol is shown in Fig. 2.1. It is a two terminal device, and within the normal working range.
terminal A is known as the anode whereas terminal K is known
as the cathode. If terminal A experiences a higher potential
compared to terminal K, the device is said to be forward biased
2.2 Properties of PN Junction
and a current called forward current (IF ) will flow through
the device in the direction as shown. This causes a small volt-
From the forward and reverse biased condition characteristics,
age drop across the device (<1 V), which in ideal condition
one can notice that when the diode is forward biased, current
is usually ignored. On the contrary, when a diode is reverse
rises rapidly as the voltage is increased. Current in the reverse
biased, it does not conduct and a practical diode do experi-
biased region is significantly small until the breakdown voltage
ence a small current flowing in the reverse direction called
of the diode is reached. Once the applied voltage is over this
the leakage current. Both the forward voltage drop and the
limit, the current will increase rapidly to a very high value
leakage current are ignored in an ideal diode. Usually in PE
limited only by an external resistance.
applications a diode is considered to be an ideal static switch.
DC diode parameters. The most important parameters
The characteristics of a practical diode show a departure
are the followings:
from the ideals of zero forward and infinite reverse impedance,
as shown in Fig. 2.2a. In the forward direction, a potential • Forward voltage, VF is the voltage drop of a diode across
barrier associated with the distribution of charges in the vicin- A and K at a defined current level when it is forward
ity of the junction, together with other effects, leads to a voltage biased.
drop. This, in the case of silicon, is in the range of 1 V for • Breakdown voltage, VB is the voltage drop across the
currents in the normal range. In reverse, within the normal diode at a defined current level when it is beyond reverse
operating range of voltage, a very small current flows which biased level. This is popularly known as avalanche.
is largely independent of the voltage. For practical purposes, • Reverse current IR is the current at a particular voltage,
the static characteristics is often represented by Fig. 2.2b. which is below the breakdown voltage.

15
Copyright © 2001 by Academic Press
16 A. I. Maswood

(a) Symbol (b) Stud type packaging (c) Disk type packaging

A
Metal

IF Ceramic
insulator

FIGURE 2.1 Power diode: (a) symbol; (b) and (c) types of packaging.

Forward AC diode parameters. The commonly used parameters are

the followings:
I • Forward recovery time, tFR is the time required for the
diode voltage to drop to a particular value after the
Reverse Forward
o v
forward current starts to flow.
• Reverse recovery time trr is the time interval between
the application of reverse voltage and the reverse cur-
rent dropped to a particular value as shown in Fig. 2.3.
Reverse Parameter ta is the interval between the zero crossing of
the diode current to when it becomes IRR . On the other
FIGURE 2.2a Typical static characteristic of a power diode (forward
hand, tb is the time interval from the maximum reverse
and reverse have different scale).
recovery current to approximately 0.25 of IRR . The ratio
of the two parameters ta and tb is known as the softness
factor (SF). Diodes with abrupt recovery characteristics
Forward are used for high frequency switching.
In practice, a design engineer frequently needs to calculate
I
r the reverse recovery time. This is in order to evaluate the pos-
Reverse o Forward sibility of high frequency switching. As a thumb rule, the lower
vo v tRR the faster the diode can be switched.
Limit of
operating trr = ta + tb (2.1)
voltage
Reverse If tb is negligible compared to ta which is a very common
FIGURE 2.2b Practical representation of the static characteristic of a case, then the following expression is valid:
power diode.

2QRR
tRR =
(di/dt )

IF trr IF
trr
ta
ta
o o
t t
0.251RR

IRR IRR
tb tb
(a) Soft recovery (b) Abrupt recovery

FIGURE 2.3 Diode reverse recovery with various softness factors.

2 The Power Diode 17

from which the reverse recovery current In case of current exceeding the rated value, their case tem-
 perature will rise. For stud-mounted diodes, their thermal
di resistance is between 0.1 and 1◦ C/W.
IRR = 2QRR Zener diode: Its primary applications are in the voltage
dt
reference or regulation. However, its ability to maintain a cer-
where QRR is the storage charge and can be calculated from tain voltage depends on its temperature coefficient and the
the area enclosed by the path of the recovery current. impedance. The voltage reference or regulation applications
of zener diodes are based on their avalanche properties. In the
EXAMPLE 2.1 The manufacturer of a selected diode
reverse biased mode, at a certain voltage the resistance of these
gives the rate of fall of the diode current di/dt = 20 A/µs,
devices may suddenly drop. This occurs at the zener voltage
and its reverse recovery time trr = 5 µs. What value of
VX , a parameter the designer knows beforehand.
peak reverse current do you expect?
Figure 2.4 shows a circuit using a zener diode to control a
SOLUTION. The peak reverse current is given as: reference voltage of a linear power supply. Under normal oper-
ating condition, the transistor will transmit power to the load

di (output) circuit. The output power level will depend on the
IRR = 2QRR transistor base current. A very high base current will impose a
dt
large voltage across the zener and it may attain zener voltage
The storage charge QRR is calculated as: VX , when it will crush and limit the power supply to the load.

1 di 2 2
QRR = t = 1/2 × 20 A/µs × (5 × 10−6 ) = 50 µC
2 dt rr
Hence, Input
Regulator

transistor
A Zener
IRR = 20 × 2 × 50 µC = 44.72 A
µs Diode

Output
• Diode capacitance, CD is the net diode capacitance
including the junction (CJ ) plus package capaci-
tance (CP ).
FIGURE 2.4 Voltage regulator with a zener diode for reference.
In high-frequency pulse switching, a parameter known as
transient thermal resistance is of vital importance since it indi- Photo diode: When a semiconductor junction is exposed
cates the instantaneous junction temperature as a function of to light, photons generate hole–electron pairs. When these
time under constant input power. charges diffuse across the junction, they produce photocur-
rent. Hence this device acts as a source of current, which
increases with the intensity of light.
2.3 Common Diode Types Light emitting diode (LED): Power diodes used in PE cir-
cuits are high power versions of the commonly used devices
Depending on their applications, diodes can be segregated into employed in analog and digital circuits. They are manufac-
the following major divisions: tured in wide varieties and ranges. The current rating can
Small signal diode: They are perhaps the most widely used be from a few amperes to several hundreds while the voltage
semiconductor devices used in wide variety of applications. In rating varies from tens of volts to several thousand volts.
general purpose applications, they are used as a switch in recti-
fiers, limiters, capacitors, and in wave-shaping. Some common
diode parameters a designer needs to know are the forward 2.4 Typical Diode Ratings
voltage, reverse breakdown voltage, reverse leakage current,
and the recovery time.
2.4.1 Voltage Ratings
Silicon rectifier diode: These are the diodes, which have
high forward current carrying capability, typically up to several For power diodes, a given datasheet has two voltage ratings.
hundred amperes. They usually have a forward resistance of One is the repetitive peak inverse voltage (VRRM ), the other
only a fraction of an ohm while their reverse resistance is in the is the non-repetitive peak inverse voltage. The non-repetitive
mega-ohm range. Their primary application is in power con- voltage (VRM ) is the diodes capability to block a reverse volt-
version, like in power supplies, UPS, rectifiers/inverters, etc. age that may occur occasionally due to a overvoltage surge.
18 A. I. Maswood

Repetitive voltage on the other hand is applied on the diode recovery of the diode. They are hard to estimate. Hence,
in a sustained manner. To understand this, let us look at the a design engineer would always use a safety factor to cater
circuit in Fig. 2.5. to these overvoltages. Hence, one should use a diode with
a 220 × 2 × 1.5 = 660 V rating.
EXAMPLE 2.2 Two equal source voltages of 220 V peak
and phase shifted from each other by 180◦ are supplying
a common load as shown. (a) Show the load voltage;
(b) describe when diode D1 will experience VRRM ; and 2.4.2 Current Ratings
(c) determine the VRRM magnitude considering a safety
factor of 1.5. Power diodes are usually mounted on a heat sink. This effec-
tively dissipates the heat arising due to continuous conduction.
SOLUTION. (a) The input voltage, load voltage, and the Hence, current ratings are estimated based on temperature rise
voltage across D1 when it is not conducting (VRRM ) are considerations. The datasheet of a diode normally specifies
shown in Fig. 2.5b. three different current ratings. They are (1) the average cur-
(b) Diode D1 will experience VRRM when it is not rent, (2) the rms current, and (3) the peak current. A design
conducting. This happens when the applied voltage V1 engineer must ensure that each of these values is not exceeded.
across it is in the negative region (from 70 to 80 ms To do that, the actual current (average, rms, and peak) in the
as shown in the figure) and consequently the diode is circuit must be evaluated either by calculation, simulation, or
reverse biased. The actual ideal voltage across it is the measurement. These values must be checked against the ones
peak value of the two input voltages i.e. 220×2 = 440 V. given in the datasheet for that selected diode. The calculated
This is because when D1 is not conducting, D2 conducts. values must be less than or equal to the datasheet values. The
Hence in addition Van , Vbn is also applied across it since following example shows this technique.
D2 is practically shorted.
(c) The VRRM = 440 V is the value in ideal situa- EXAMPLE 2.3 The current waveform passing through a
tion. In practice, higher voltages may occur due to stray diode switch in a switch mode power supply application
circuit inductances and/or transients due to the reverse is shown in Fig. 2.6. Find the average, rms, and the peak
current.
SOLUTION. The current pulse duration is shown to be
A 0.2 ms within a period of 1 ms and with a peak amplitude
V1 + D1 of 50 A. Hence the required currents are:
Vd1 Dbreak
--
0.2
N
VRL Iaverage = 50 × = 10 A
1
Dbreak
D2

V2 0.2
Irms = 502 × = 22.36 A
B
1

FIGURE 2.5a The circuit. Ipeak = 50 A

400V
Input Voltages
Sometimes, a surge current rating and its permissible dura-
tion is also given in a datasheet. For protection of diodes and
other semiconductor devices, a fast acting fuse is required.
−400V
V(V2:+) V(V1:+) These fuses are selected based on their I 2 t rating which is
400V
normally specified in a datasheet for a selected diode.
D1 Conducting D2 Conducting Load Voltage

−0V
500V
V(R1:1,R1:2) 50A 0.2 ms
Current

Peak Inverse voltage (when it is not conducting)

across diode D1

SEL>> 0 1 2 3
−500V
60ms 70ms 80ms 90 ms Time (ms)

FIGURE 2.5b The waveforms. FIGURE 2.6 The current waveform.

2 The Power Diode 19

2.5 Snubber Circuits for Diode

Snubber circuits are essential for diodes used in switching
R1
circuits. It can save a diode from overvoltage spikes, which D1 C1
may arise during the reverse recovery process. A very com-
mon snubber circuit for a power diode consists of a capacitor
and a resistor connected in parallel with the diode as shown in Vs R2
Fig. 2.7. D2 C2
When the reverse recovery current decreases, the capac-
itor by virtue of its property will try to hold the voltage
across it, which, approximately, is the voltage across the diode. D3
The resistor on the other hand will help to dissipate some of R3 C3
the energy stored in the inductor, which forms the IRR loop.
The dv/dt across a diode can be calculated as:

dv 0.632 × VS 0.632 × VS FIGURE 2.8 Series connected diodes with necessary protection.
= = (2.2)
dt τ RS × C S
series connected diodes. Additionally, due to the differences
where VS is the voltage applied across the diode. in the reverse recovery times, some diodes may recover from
Usually the dv/dt rating of a diode is given in the manufac- the phenomenon earlier than the other causing them to bear
turers datasheet. Knowing dv/dt and the RS , one can choose the full reverse voltage. All these problems can effectively be
the value of the snubber capacitor CS . The RS can be calculated overcome by connecting a bank of a capacitor and a resistor
from the diode reverse recovery current: in parallel with each diode as shown in Fig. 2.8.
If a selected diode cannot match the required current rating,
VS
RS = (2.3) one may connect several diodes in parallel. In order to ensure
IRR equal current sharing, the designer must choose diodes with
the same forward voltage drop properties. It is also important
The designed dv/dt value must always be equal or lower than
to ensure that the diodes are mounted on similar heat sinks
the dv/dt value found from the datasheet.
and are cooled (if necessary) equally. This will affect the tem-
peratures of the individual diodes, which in turn may change
the forward characteristics of diode.

Cs
Tutorial 2.1 Reverse Recovery and
Overvoltages
Vs
Figure 2.9 shows a simple switch mode power supply. The
Rs switch (1-2) is closed at t = 0 s. When the switch is open, a
freewheeling current IF = 20 A flows through the load (RL),
freewheeling diode (DF), and the large load circuit inductance
(LL). The diode reverse recovery current is 20 A and it then
FIGURE 2.7 A typical snubber circuit.
decays to zero at the rate of 10 A/µs. The load is rated at 10 
and the forward on-state voltage drop is neglected.

2.6 Series and Parallel Connection of (a) Draw the current waveform during the reverse recov-
ery (IRR ) and find its time (trr ).
Power Diodes
(b) Calculate the maximum voltage across the diode
during this process (IRR ).
For specific applications, when the voltage or current rating
of a chosen diode is not enough to meet the designed rating, SOLUTION. (a) A typical current waveform during
diodes can be connected in series or parallel. Connecting them reverse recovery process is shown in Fig. 2.10 for an
in series will give the structure a high voltage rating that may ideal diode.
be necessary for high-voltage applications. However, one must When the switch is closed, the steady-state current is,
ensure that the diodes are properly matched especially in terms ISS = 200 V/10  = 20 A, since under steady-state con-
of their reverse recovery properties. Otherwise, during reverse dition, the inductor is shorted. When the switch is open,
recovery there may be a large voltage imbalances between the the reverse recovery current flows in the right-hand side
20 A. I. Maswood

From t2 to t3 , the current decays to zero at the rate of

I 20 A/µs. The required time:
L= 10uH LL
1 2 20 A
t3 − t2 = = 2 µs
+ 10 A/µs

ldf RL Hence the actual reverse recovery time: trr = t3 − t1 =

Vs = 200 V (1 + 1 + 2) − 1 = 3 µs.
− (b) The diode experiences the maximum voltage just
DF
when the switch is open. This is because both the source
Is
voltage 200 V and the newly formed voltage due to the
change in current through the inductor L. The voltage
across the diode:
FIGURE 2.9 A simple switch mode power supply with freewheeling
diS
diode. VD = −V +L = −200+(10×10−6 )(−20×106 ) = −400V
dt

20 A 0 s Tutorial 2.2 Ideal Diode Operation,

Mathematical Analysis,
t3
time (s)
and PSPICE Simulation
t1
This tutorial illustrates the operation of a diode circuit. Most
20 A
of the PE applications operate at a relative high voltage, and in
t2
such cases, the voltage drop across the power diode usually is
small. It is quite often justifiable to use the ideal diode model.
FIGURE 2.10 Current through the freewheeling diode during reverse An ideal diode has a zero conduction drop when it is forward
recovery. biased and has zero current when it is reverse biased. The
explanation and the analysis presented below is based on the
loop consisting of the LL, RL, and DF. The load induc- ideal diode model.
tance, LL is assumed to be shorted. Hence, when the
switch is closed, the loop equation is: Circuit Operation A circuit with a single diode and an RL
load is shown in Fig. 2.11. The source VS is an alternating
V =L
diS sinusoidal source. If VS = Esin(ωt ), then VS is positive when
dt 0 < ωt < π, and VS is negative when π < ωt < 2π. When VS
starts becoming positive, the diode starts conducting and the
from which positive source keeps the diode in conduction till ωt reaches
diS V 200 π radians. At that instant, defined by ωt = π radians, the cur-
= = = 20 A/µs
dt L 10 rent through the circuit is not zero and there is some energy
stored in the inductor. The voltage across an inductor is pos-
At the moment the switch is open, the same current itive when the current through it is increasing and becomes
keeps flowing in the right-hand side loop. Hence, negative when the current through it tends to fall. When the

did diS
=− = −20 A/µs
dt dt Diode Inductor

from time zero to time t1 the current will decay at a

VL
rate of 20 A/s and will be zero at t1 = 20/20 = 1 µs. The
reverse recovery current starts at this point and, accord- +
ing to the given condition, becomes 20 A at t2 . From
VSin VR Resistor
this point on, the rate of change remains unchanged at
−−
20 A/µs. Period t2 – t1 is found as:

20 A
t2 − t 1 = = 1 µs
20 A/µs FIGURE 2.11 Circuit diagram.
2 The Power Diode 21

di
Diode Inductor ωL +R×i =0 (2.6)
dθ
+ VL −− i(θ) = A × e −Rθ/ωL (2.7)

+ Given a linear differential equation, the solution is found

out in two parts. The homogeneous equation is defined by
Vsin VR Resistor
−−
Eq. (2.5). It is preferable to express the equation in terms of
i
the angle θ instead of “t.” Since θ = ωt , we get that dθ = ω·dt.
Then Eq. (2.5) gets converted to Eq. (2.6). Equation (2.7) is
the solution to this homogeneous equation and is called the
FIGURE 2.12 Current increasing, 0 < ωt < π/2. complementary integral.
The value of constant A in the complimentary solution is
to be evaluated later. The particular solution is the steady-
state response and Eq. (2.8) expresses the particular solution.
Diode Inductor The steady-state response is the current that would flow in
steady state in a circuit that contains only the source, resistor,
and inductor shown in the circuit, the only element miss-
−− VL +
ing being the diode. This response can be obtained using the
differential equation or the Laplace transform or the ac sinu-
+
soidal circuit analysis. The total solution is the sum of both
VSin
−− VR Resistor the complimentary and the particular solution and it is shown
i in Eq. (2.9). The value of A is obtained using the initial con-
dition. Since the diode starts conducting at ωt = 0 and the
current starts building up from zero, i(0) = 0. The value of A
is expressed by Eq. (2.10).
FIGURE 2.13 Current decreasing, π/2 < ωt < π.
Once the value of A is known, the expression for current
is known. After evaluating A, current can be evaluated at dif-
ferent values of ωt , starting from ωt = π. As ωt increases,
voltage across the inductor is negative, it is in such a direction the current would keep decreasing. For some values of ωt ,
as to forward bias the diode. The polarity of voltage across the say β, the current would be zero. If ωt > β, the current would
inductor is as shown in Fig. 2.12 or 2.13. evaluate to a negative value. Since the diode blocks current
When VS changes from a positive to a negative value, there is in the reverse direction, the diode stops conducting when ωt
current through the load at the instant ωt = π radians and the reaches. Then an expression for the average output voltage can
diode continues to conduct till the energy stored in the induc- be obtained. Since the average voltage across the inductor has
tor becomes zero. After that the current tends to flow in the to be zero, the average voltage across the resistor and average
reverse direction and the diode blocks conduction. The entire voltage at the cathode of the diode are the same. This average
applied voltage now appears across the diode. value can be obtained as shown in Eq. (2.11).
 
E
i(θ) = sin(ωt − α) (2.8)
Mathematical Analysis An expression for the current Z
through the diode can be obtained as shown in the equa- where  
ωl
tions. It is assumed that the current flows for 0 < ωt < β, where α = a tan and Z 2 = R 2 + ωl 2
R
β > π, when the diode conducts, the driving function for the
differential equation is the sinusoidal function defining the E
source voltage. During the period defined by β < ωt < 2π, i(θ) = A × e (−Rθ/ωL) + sin(θ − α) (2.9)
Z
the diode blocks current and acts as an open switch. For
 
this period, there is no equation defining the behavior of the E
circuit. For 0 < ωt < β, Eq. (2.4) applies. A= sin(α) (2.10)
Z
Hence, the average output voltage:
di
L + R × i = E × sin(θ), where − 0 ≤ θ ≤ β (2.4)
dt β
E E
di VOAVG = sinθ · dθ = × [1 − cos(β)] (2.11)
L +R×i =0 (2.5) 2π 2π
dt 0
22 A. I. Maswood

DT LT .MODEL Dbreak D(IS=10N N=1 BV=1200

1 2 3 IBV=10E-3 VJ=0.6)
.TRAN 10 uS 100 mS 60 mS 100 uS
V2 10 mH
RT .PROBE
+
Dbreak .OPTIONS (ABSTOL=1N RELTOL=.01 VNTOL=1MV)
5 .END
−
The diode is described using the MODEL statement. The
TRAN statement simulates the transient operation for a period
of 100 ms at an interval of 10 ms. The OPTIONS statement
sets limits for tolerances. The output can be viewed on the
0 screen because of the PROBE statement. A snapshot of various
voltages/currents is shown in Fig. 2.15.
FIGURE 2.14 PSPICE model to study an R–L diode circuit. From Fig. 2.15, it is evident that the current lags the source
voltage. This is a typical phenomenon in any inductive circuit
and is associated with the energy storage property of the induc-
tor. This property of the inductor causes the current tochange
slowly, governed by the time constant τ = tan−1 ωl/R .
PSPICE Simulation For simulation using PSPICE, the Analytically, this is calculated by the expression in
circuit used is shown in Fig. 2.14. Here the nodes are num- Eq. (2.8).
bered. The ac source is connected between the nodes 1 and
0. The diode is connected between the nodes 1 and 2 and the
inductor links the nodes 2 and 3. The resistor is connected 2.7 Typical Applications of Diodes
from the node 3 to the reference node, that is, node 0. The
circuit diagram is shown in Fig. 2.14. A. In rectification
The PSPICE program in textform is presented below.
Four diodes can be used to fully rectify an ac signal as shown
∗ Half-wave Rectifier with RL Load in Fig. 2.16. Apart from other rectifier circuits, this topol-
∗ An exercise to find the diode current ogy does not require an input transformer. However, they are
VIN 1 0 SIN(0 100 V 50 Hz) used for isolation and protection. The direction of the current
D1 1 2 Dbreak is decided by two diodes conducting at any given time. The
L1 2 3 10 mH direction of the current through the load is always the same.
R1 3 0 5 Ohms This rectifier topology is known as the full bridge rectifier.

100
Current through the diode
(Note the phase shift
between V and I)

Input voltage

100
V(V2:+) I(DT)∗5
00V
Voltage across R

Voltage across L

L>>
00V

FIGURE 2.15 Voltage/current waveforms at various points in the circuit.

2 The Power Diode 23

D1 D3

RL
VS
D4 D2

D1, D2 Conducting D3, D4 Conducting

0ms 70ms 80ms 90ms

FIGURE 2.16 Full bridge rectifier and its output dc voltage.

The average rectifier output voltage: C. As voltage multiplier

Connecting diode in a predetermined manner, an ac signal can
2Vm be doubled, tripled, and even quadrupled. This is shown in
Vdc = , where Vm is the peak input voltage
π Fig. 2.18. As evident, the circuit will yield a dc voltage equal to
2Vm . The capacitors are alternately charged to the maximum
The rms rectifier output voltage:
value of the input voltage.
Vm
Vrms = √
2

This rectifier is twice as efficient as compared to a single

phase one.
+Vm−− +2Vm−−
Vm sin(ωt)

B. For voltage clamping

Figure 2.17 shows a voltage clamper. The negative pulse of the
sinusoidal input voltage charges the capacitor to its maximum +2Vm−− +2Vm−−
value in the direction shown. After charging, the capacitor
cannot discharge, since it is open circuited by the diode. Hence
the output voltage: Doubler

Vo = Vc + Vi = Vm (1 + sin(ωt )) Quadrupler

The output voltage is clamped between zero and 2Vm . FIGURE 2.18 Voltage doubler and quadrupler circuit.

Vc
2Vm Vo
+ −
+
Vm
Vi
− Vo
Vm cos(ωt) 0
−

FIGURE 2.17 Voltage clamping with diode.

24 A. I. Maswood

forward current (IF ) and the peak inverse (VRRM ) voltage. For
2.8 Standard Datasheet for Diode example, the designer chooses the diode type V30 from the
Selection table in Fig. 2.19 because it closely matches their calculated
values of IF and VRRM without going over. However, if for
In order for a designer to select a diode switch for specific some reason only the VRRM matches but the calculated value
applications, the following tables and standard test results of IF comes higher, one should go for diode H14, and so on.
can be used. A power diode is primarily chosen based on Similar concept is used for VRRM .

General-Use Rectifier Diodes

Glass Molded Diodes

IF(AV) VRRM(V)
50 100 200 300 400 500 600 800 1000 1300 1500
(A) Type
0.4 V30 - - - - - - - yes yes yes yes
1.0 H14 - yes yes yes yes yes yes yes yes - -
1.1 V06 - - yes - yes - yes yes - - -
1.3 V03 - - yes - yes - yes yes - - -
2.5 U05 - yes yes - yes - yes yes - - -
3.0 U15 - yes yes - yes - yes yes - - -

FIGURE 2.19 Table of diode selection based on average forward current, IF (AV ) and peak inverse voltage, VRRM (courtesy of Hitachi semiconductors).

ABSOLUTE MAXIMUM RATINGS

Item Type V30J V30L V30M V30N

Repetitive Peak Reverse Voltage VRRM V 800 1000 1300 1500

Non-Repetitive Peak Reverse Voltage VRSM V 1000 1300 1600 1800

Single-phase half sine wave 180° conduction

Average Forward Current IF(AV) A (
0.4 TL = 100°C, Lead length = 10 mm )
Surge(Non-Repetitive) Forward Current IFSM A 30 (Without PIV, 10 ms conduction, Tj = 150°C start)

I2t Limit Value I2t A2s 3.6 (Time = 2 ~ 10 ms, I = RMS value)

Operating Junction Temperature Tj °C −50 ~ +150

Storage Temperature Ts1g °C −50 ~ +150

Notes (1) Lead Mounting: Lead temperature 300°C max. to 3.2 mm from body for 5 sec. max.
(2) Mechanical strength: Bending 90° × 2 cycles or 180° × 1 cycle, Tensile 2kg, Twist 90° × l cycle.

CHARACTERISTICS (TL=25°C)
Item Symbols Units Min. Typ. Max. Test Conditions
Peak Reverse Current IRRM µA – 0.6 10 All class Rated VRRM

Peak Forward Voltage VFM V IFM = 0.4 Ap, Single-phase half

– – 1.3
sine wave 1 cycle

Reverse Recovery Time trr µs – 3.0 – IF = 2 mA, VR =−15 V

Rth(j-a) 80
Steady State Thermal Impedance °C/W – – Lead length = 10 mm
Rth(j-1) 50

FIGURE 2.20 Details of diode characteristics for diode V30 selected from Fig. 2.19.
2 The Power Diode 25

In addition to the above mentioned diode parameters, one Max. allowable ambient temperature
should also calculate parameters like the peak forward volt- (Resistive or inductive load)
age, reverse recovery time, case and junction temperatures, 200

Max. allowable ambient temperature (°C)

Single-phase half sine wave
etc. and check them against the datasheet values. Some of 180° conduction (50 Hz)

these datasheet values are provided in Fig. 2.20 for the selected 160
diode V30. Figures 2.21–2.23 give the standard experimental L = 10 mm
relationships between voltages, currents, power, and case tem- 120
20 mm
25 mm
peratures for our selected V30 diode. These characteristics help
a designer to understand the safe operating area for the diode,
and to make a decision whether or not to use a snubber or 80
a heat sink. If one is particularly interested in the actual reverse L L
recovery time measurement, the circuit given in Fig. 2.24 can 40
be constructed and experimented upon. PC board (100x180x1.6t)
Copper foil (
5.5)
0
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward characteristic Average forward current (A)

100 FIGURE 2.23 Maximum allowable case temperature with variation of

Single-phase half sine wave
Conduction : 10ms 1 cycle average forward current.
Peak forward current (A)

10
Reverse recovery time(trr) test circuit
TL = 150°C

TL = 25°C
50 µf D.U.T
0 t
1.0 −15 V
lrp 0.1Irp
2mA
22 µs 600 Ω
15 V
trr
0.1
0 1 2 3 4 5
Peak forward voltage drop (V) FIGURE 2.24 Reverse recovery time (trr ) measurement.

FIGURE 2.21 Variation of peak forward voltage drop with peak

forward current.
References
Max. average forward power dissipation 1. N. Lurch, Fundamentals of Electronics, 3rd ed., John Wiley & Sons Ltd.,
(Resistive or inductive load) New York, 1981.
2. R. Tartar, Solid-State Power Conversion Handbook, John Wiley & Sons
Max. average forward power dissipation (W)

0.8 Ltd., New York, 1993.

DC
3. R.M. Marston, Power Control Circuits Manual, Newnes circuits manual
series. Butterworth Heinemann Ltd., New York, 1995.
0.6 4. Internet information on “Hitachi Semiconductor Devices,”
Single-phase(50Hz) http://semiconductor.hitachi.com.
5. International rectifier, Power Semiconductors Product Digest, 1992/93.
0.4 6. Internet information on, “Electronic Devices & SMPS Books,”
http://www.smpstech.com/books/booklist.htm.

0.2

0
0 0.1 0.2 0.3 0.4 0.5 0.6
Average forward current (A)

FIGURE 2.22 Variation of maximum forward power dissipation with

average forward current.