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The document discusses: 1. Determining equilibrium electron and hole concentrations in uniformly doped silicon samples under different conditions of temperature and doping. 2. Defining non-degeneracy in semiconductors and finding the maximum doping such that this condition holds. 3. Developing an expression for the number of available states in the conduction band between two energy levels. 4. Solving problems related to semiconductor doping and carrier concentrations.

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satyajit mohapatra
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161 views

For Scribid PDF

The document discusses: 1. Determining equilibrium electron and hole concentrations in uniformly doped silicon samples under different conditions of temperature and doping. 2. Defining non-degeneracy in semiconductors and finding the maximum doping such that this condition holds. 3. Developing an expression for the number of available states in the conduction band between two energy levels. 4. Solving problems related to semiconductor doping and carrier concentrations.

Uploaded by

satyajit mohapatra
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Determine the equilibrium electron and hole concentrations inside a uniformly doped sample of Si under the

following condition:
(a) T = 300 K, Na << Nd, Nd = 1015 /cm3.
(b) T = 300 K, Na = 1016 /cm3, Nd << Na.
(c) T = 300 K, Na = 9 Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016
/cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds. Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =
1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.
3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


x 1015 /cm3, Nd = 1016 /cm3.
(d) T = 450 K, Na = 0, Nd = 1014 /cm3.
(e) T = 650 K, Na = 0, Nd = 1014 /cm3
Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7


5. Solve the following:
a) If 𝐸𝐹 is positioned at 𝐸𝐶, determine (numerical value) the probability of finding electrons in states at
𝐸𝐶+𝐾𝑇.
b) The probability that a state is filled at the conduction band edge (𝐸𝐶) is precisely equal to the probability
that a s

Determine the equilibrium electron and hole concentrations inside a uniformly doped sample of Si under the
following condition:
(a) T = 300 K, Na << Nd, Nd = 1015 /cm3.
(b) T = 300 K, Na = 1016 /cm3, Nd << Na.
(c) T = 300 K, Na = 9 Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016
/cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds. Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =
1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7


5. Solve the following:
Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


x 1015 /cm3, Nd = 1016 /cm3.
(d) T = 450 K, Na = 0, Nd = 1014 /cm3.
(e) T = 650 K, Na = 0, Nd = 1014 /cm3
Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


a) If 𝐸𝐹 is positioned at 𝐸𝐶, determine (numerical value) the probability of finding electrons in states at
𝐸𝐶+𝐾𝑇.
b) The probability that a state is filled at the conduction band edge (𝐸𝐶) is precisely equal to the probability
that a s

Determine the equilibrium electron and hole concentrations inside a uniformly doped sample of Si under the
following condition:
(a) T = 300 K, Na << Nd, Nd = 1015 /cm3.
(b) T = 300 K, Na = 1016 /cm3, Nd << Na.
(c) T = 300 K, Na = 9 Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016
/cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds. Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =
1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7


5. Solve the following:
x 1015 /cm3, Nd = 1016 /cm3.
(d) T = 450 K, Na = 0, Nd = 1014 /cm3.
(e) T = 650 K, Na = 0, Nd = 1014 /cm3
Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


a) If 𝐸𝐹 is positioned at 𝐸𝐶, determine (numerical value) the probability of finding electrons in states at
𝐸𝐶+𝐾𝑇.
b) The probability that a state is filled at the conduction band edge (𝐸𝐶) is precisely equal to the probability
that a s

Determine the equilibrium electron and hole concentrations inside a uniformly doped sample of Si under the
following condition:
(a) T = 300 K, Na << Nd, Nd = 1015 /cm3.
(b) T = 300 K, Na = 1016 /cm3, Nd << Na.
(c) T = 300 K, Na = 9 Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016
/cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7


5. Solve the following:
Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds. Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =
1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


x 1015 /cm3, Nd = 1016 /cm3.
(d) T = 450 K, Na = 0, Nd = 1014 /cm3.
(e) T = 650 K, Na = 0, Nd = 1014 /cm3
Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:


a) If 𝐸𝐹 is positioned at 𝐸𝐶, determine (numerical value) the probability of finding electrons in states at
𝐸𝐶+𝐾𝑇.
b) The probability that a state is filled at the conduction band edge (𝐸𝐶) is precisely equal to the probability
that a s

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