Lecture Outline

ESE 568: Mixed Signal Design and

!  MOSFET (Large Signal)
Modeling "  2nd order effects
!  Small Signal Model
Lec 3: September 10th, 2018 "  Resistive components
MOS Models: Small Signal, "  Capacitive Components
CMOS Subcircuits !  CMOS Subcircuits
"  Common-source Amplifier
"  Source Follower
"  Source Coupled Pair
"  Current Mirror

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.

Najmabadi, UCSD) Penn ESE 568 Fall 2018 - Khanna 2

MOS IV Characteristic Equations 2nd Order Effects

Not exactly, subT current flows
!  Short Channel Effects 
"  Mobility Degradation with Normal Field
"  Vertical field
"  Triode and saturation region
[1+λ(vDS−VOV)] "  Velocity Saturation
"  Lateral field
"  Saturation region
"  VT reduction
"  DIBL 

[1+λ(vDS−VOV)]

Simplified for hand analysis

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 3 Penn ESE 568 Fall 2018 - Khanna 4

Mobility Degradation with Normal Field Mobility Degradation with Normal Field
!  Usually modeled empirically !  High gate-to-source voltage
!  Affects both saturation and triode regions
"  Strong inversion only µ n0
µ n (eff ) ≈
1+ θ (VGS −VT )

!  θ= mobility modulation factor (empirical)

(VDS small)

Penn ESE 568 Fall 2018 - Khanna 5 Penn ESE 568 Fall 2018 – Khanna 6

1
 Velocity Saturation Velocity Saturation
!  Affects saturation region in strong inversion
!  Once velocity saturates:
Mobility degradation due to lateral electric field (VDS/Leff)

!  Long Channel !  Short Channel

Penn ESE 568 Fall 2018 – Khanna 7 Penn ESE 570 Spring 2018 – Khanna 8

Short Channel Effects – VT Reduction Short Channel Effects – VT Reduction

G G G G
S D S D S D S D

n+ n+ xj n+ n+ n+ n+ xj n+ n+
QB0 QB0
pn+ Leff QB0(sc) pn+ Leff QB0(sc)
Leff pn+ Leff pn+
depletion depletion depletion depletion
region VGS induced region VGS induced
region region
depletion depletion
region region

VT0 (short channel) = VT0 - ΔVT0 VT0 (short channel) = VT0 - ΔVT0

Penn ESE 568 Fall 2018 – Khanna 9 Penn ESE 568 Fall 2018 – Khanna 10

Short Channel Effects - DIBL MOS IV Characteristic Equations

Not exactly, subT current flows
!  Drain Induced Barrier Lowering
"  VT Reduction with Drain Bias

[1+λ(vDS−VOV)]

[1+λ(vDS−VOV)]

Simplified for hand analysis

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Penn ESE 568 Fall 2018 - Khanna 11 Najmabadi, UCSD) 12

2
 Formal Derivation of Small Signal Model

Small Signal Models

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.

Najmabadi, UCSD) 14

Formal Derivation of Small Signal Model Formal Derivation of Small Signal Model

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 15 Najmabadi, UCSD) 16

MOS Small Signal Model MOS Small Signal Model

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 17 Najmabadi, UCSD) 18

3
 MOS Small Signal Model MOS Small Signal Model

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 19 Najmabadi, UCSD) 20

MOS Small Signal Model MOS Small Signal Model

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 21 Najmabadi, UCSD) 22

MOS Small Signal Model MOS Small Signal Model

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 23 Najmabadi, UCSD) 24

4
 MOS Small Signal Model MOS Small Signal Model

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 25 Najmabadi, UCSD) 26

MOS Small Signal Model Back Gate Small Signal Model

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.

Najmabadi, UCSD) 27 Penn ESE 568 Fall 2018 - Khanna 28

Back Gate Small Signal Model Weak Inversion Small Signal Model

vds
id = gm ⋅ vgs + + gmb ⋅ vsb
ro

gs = gmb

Penn ESE 568 Fall 2018 - Khanna 29 Penn ESE 568 Fall 2018 - Khanna 30

5
 Weak Inversion Small Signal Model pMOS Small Signal Model

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.

Penn ESE 568 Fall 2018 - Khanna 31 Najmabadi, UCSD) 32

MOSFET Parasitic Capacitance Capacitance Roundup

!  Cgs=CGSi+CGSO
!  Cgd=CGDi+CGDO
!  Cgb=CGBO
!  Csb=Cdiff
!  Cdb=Cdiff
!  Any two conductors separated by an insulator form
a parallel-plate capacitor intrinsic
!  Two types extrinsic
"  Extrinsic – Outside the box (e.g. junction, overlap)
"  Intrinsic – Inside the box (e.g. gate-to-channel)
Penn ESE 568 Fall 2018 – Khanna 33 Penn ESE 568 Fall 2018 – Khanna 34

CMOS Device Capacitance CMOS Device Capacitance

Penn ESE 568 Fall 2018 - Khanna 35 Penn ESE 568 Fall 2018 - Khanna 36

6
 Small Signal Capacitance Roundup Small Signal Capacitance Roundup
!  Textbook pgs 41 and 42 !  Textbook pgs 41 and 42
Assumes Saturation Assumes Saturation

Penn ESE 568 Fall 2018 - Khanna 37 Penn ESE 568 Fall 2018 - Khanna 38

Current Mirror

CMOS Subcircuits

Penn ESE 568 Fall 2018 - Khanna 40

Current Mirror – Small Signal Current Mirror – Small Signal

Penn ESE 568 Fall 2018 - Khanna 41 Penn ESE 568 Fall 2018 - Khanna 42

7
 Current Mirror – Small Signal Current Mirror – Small Signal

Penn ESE 568 Fall 2018 - Khanna 43 Penn ESE 568 Fall 2018 - Khanna 44

Common-source Amplifier Common-source Amplifier

!  Biased Q2: Active resistive load for Q1

!  Large Signal Response
"  DC Transfer Characteristic
"  Assuming subthreshold current = 0
"  Id1=Id2
"  Solve for Vout for three different operating regions

Penn ESE 568 Fall 2018 - Khanna 45 Penn ESE 568 Fall 2018 - Khanna 46

Common-source Amplifier Common-source Amplifier: Example

!  Assume Ibias=100μA, all transistors have W/L = 10μm/

0.4μm. What is the gain of the stage?
!  0.35μm Technology:
"  μnCox = 190 μA/V2
"  λL = 0.16 μm/V
Penn ESE 568 Fall 2018 - Khanna 47 Penn ESE 568 Fall 2018 - Khanna 48

8
 Reminder: MOS Small Signal Model Common-source Amplifier: Example
vout
= −gm1 (ro1 || ro2 )
vin
µA
2 ⋅190 ⋅10µ m ⋅100µ A
V2 mA
gm1 = = 0.97
0.4µ m V
1 1
ro1 = ro2 = = = 25kΩ
λ I D 0.16 µ m ⋅ 1 ⋅100µ A
V 0.4µ m
!  Assume Ibias=100μA, all transistors have W/L = 10μm/
0.4μm. What is the gain of the stage?
!  0.35μm Technology: vout
"  μnCox = 190 μA/V2 = −12.1
vin
"  λL = 0.16 μm/V
Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 49 Penn ESE 568 Fall 2018 - Khanna 50

Common-source Amplifier: Example Common-source Amplifier: Example

vout vout vout
= −gm1 (ro1 || ro2 ) = −gm1 (ro1 || ro2 ) = −15
vin vin vin
µA
2 ⋅190 ⋅14µ m ⋅100µ A
V2 mA
g m1 = = 1.2
0.4µ m V
1 1
ro1 = ro2 = = = 25kΩ
λID µm 1
0.16 ⋅ ⋅100µ A
V 0.4µ m
!  Modify only the device width to increase the gain by 20% !  Modify only the device width to increase the gain by 20%
!  ro1 and ro2 are unchanged with fixed drain current !  ro1 and ro2 are unchanged with fixed drain current
!  Modify gm1: !  Modify gm1:
"  Gain increase of 20% # gm1 increase by 20% # W1 "  Gain increase of 20% # gm1 increase by 20% # W1
increase by ~40% increase by ~40%
Penn ESE 568 Fall 2018 - Khanna 51 Penn ESE 568 Fall 2018 - Khanna 52

Source Follower Source Follower

!  Small Signal Response – high gain region

"  KCL:

"  Gain:

Penn ESE 568 Fall 2018 - Khanna 53 Penn ESE 568 Fall 2018 - Khanna 54

9
 Source Follower Source Follower

!  Small Signal Response – high gain region !  Small Signal Response – high gain region
"  KCL: vout "  KCL: vout
gm1 (vin − vout ) − gs1vout − =0 gm1 (vin − vout ) − gs1vout − =0
rds1 || rds2 rds1 || rds2
"  Gain: "  Gain: vout ! 1 1 $
= gm1 # || || rds1 || rds2 &
vin " gm1 gs1 %
Penn ESE 568 Fall 2018 - Khanna 55 Penn ESE 568 Fall 2018 - Khanna 56

Source Follower: Example Source Follower: Example

µA
2 ⋅ 270 ⋅ 2µ m ⋅100µ A
V2 mA
g m1 = = 0.735
! 1 $ 0.2µ m V
vout 1
= gm1 # || || rds1 || rds2 & 1 1
vin " gm1 gs1 % ro1 = ro2 = = = 25kΩ
λID µm 1
0.08⋅ ⋅100µ A
V 0.2µ m
γ gm 0.3⋅ g m mA
g s1 = = ≅ 0.13g m = 0.1
2 VSB + | 2ΦF | 2 0.5+ 0.8 V
!  Consider Ibias = 100 μA, all transistors !  Consider Ibias = 100 μA, all transistors
have W ⁄ L = 2 μm ⁄ 0.2 μm, φF ≅ 0.4 V, γ = 0.3 have W ⁄ L = 2 μm ⁄ 0.2 μm, φF ≅ 0.4 V, γ = 0.3
V–1 ⁄ 2, What is the gain of the stage?  V–1 ⁄ 2, What is the gain of the stage? 
!  0.18μm Technology: !  0.18μm Technology:
"  μnCox = 270 μA/V2 "  μnCox = 270 μA/V2
"  λL = 0.08 μm/V "  λL = 0.08 μm/V
Penn ESE 568 Fall 2018 - Khanna 57 Penn ESE 568 Fall 2018 - Khanna 58

Source Follower: Example Source Follower: Example

µA µA
2 ⋅ 270 ⋅ 2µ m ⋅100µ A 2 ⋅ 270 ⋅ 2µ m ⋅100µ A
V2 mA V2 mA
g m1 = = 0.735 g m1 = = 0.735
0.2µ m V 0.2µ m V
1 1 1 1
ro1 = ro2 = = = 25kΩ ro1 = ro2 = = = 25kΩ
λID µm 1 λID µm 1
0.08
⋅ ⋅100µ A 0.08⋅ ⋅100µ A
V 0.2µ m V 0.2µ m
γ gm 0.3⋅ g m mA γ gm 0.3⋅ g m mA
g s1 = = ≅ 0.13g m = 0.1 g s1 = = ≅ 0.13g m = 0.1
2 VSB + | 2ΦF | 2 0.5+ 0.8 V 2 VSB + | 2ΦF | 2 0.5+ 0.8 V
!  Consider Ibias = 100 μA, all transistors !  Consider Ibias = 100 μA, all transistors
have W ⁄ L = 2 μm ⁄ 0.2 μm, φF ≅ 0.4 V, γ = 0.3 have W ⁄ L = 2 μm ⁄ 0.2 μm, φF ≅ 0.4 V, γ = 0.3
V–1 ⁄ 2, What is the gain of the stage?  V–1 ⁄ 2, What is the gain of the stage? 
!  0.18μm Technology: !  0.18μm Technology:
"  μnCox = 270 μA/V2 "  μnCox = 270 μA/V2
"  λL = 0.08 μm/V "  λL = 0.08 μm/V
Penn ESE 568 Fall 2018 - Khanna 59 Penn ESE 568 Fall 2018 - Khanna 60

10
 Source Follower: Example Source Coupled Pair – Large Signal
µA
2 ⋅ 270 ⋅ 2µ m ⋅100µ A
V2 mA
g m1 = = 0.735
0.2µ m V
1 1
ro1 = ro2 = = = 25kΩ
λID µm 1
0.08⋅ ⋅100µ A
V 0.2µ m
γ gm 0.3⋅ g m mA
g s1 = = ≅ 0.13g m = 0.1
2 VSB + | 2ΦF | 2 0.5+ 0.8 V

vout ! 1 1 $
= gm1 # || || rds1 || rds2 & = 0.8
vin " gm1 gs1 %

Penn ESE 568 Fall 2018 - Khanna 61 Penn ESE 568 Fall 2018 - Khanna 62

Source Coupled Pair – Large Signal Source Coupled Pair – Large Signal

Penn ESE 568 Fall 2018 - Khanna 63 Penn ESE 568 Fall 2018 - Khanna 64

Source Coupled Pair – Large Signal Source Coupled Pair – Large Signal

Penn ESE 568 Fall 2018 - Khanna 65 Penn ESE 568 Fall 2018 - Khanna 66

11
 Source Coupled Pair – Large Signal Source Coupled Pair – Small Signal

Penn ESE 568 Fall 2018 - Khanna 67 Penn ESE 568 Fall 2018 - Khanna 68

MOS Diff Pair Gain Stage MOS Diff Pair Gain Stage

Penn ESE 568 Fall 2018 - Khanna 69 Penn ESE 568 Fall 2018 - Khanna 70

MOS Diff Pair Gain Stage MOS Diff Pair Gain Stage

3.8 in text

Penn ESE 568 Fall 2018 - Khanna 71 Penn ESE 568 Fall 2018 - Khanna 72

12
 Lecture Outline Admin
!  MOSFET has modes of operation !  HW 2 posted tonight
"  Subthreshold, Triode, Saturation "  Due 9/16
"  2nd Order Effects
!  Small Signal Model
"  Capacitive Components
"  Extrinsic, Intrinsic
"  Operate in saturation
!  Basic CMOS subcircuits
"  Current mirror – useful for biasing, high output resistance
"  Common-source amplifier for high gain, high Rin
"  Source follower for unity voltage gain, current gain
"  Source coupled pair – differential signals, classic opamp
Penn ESE 568 Fall 2018 - Khanna 73 Penn ESE 568 Fall 2018 – Khanna 74

13