VISHAY

BZX55..Series
Vishay Semiconductors

Zener Diodes

Features
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
• Low noise
• Available with tighter tolerances

Applications
Voltage stabilization 94 9367

Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 130 mg TR / 10k per 13 " reel, 30k/box
Packaging Codes/Options: TAP / 10k per Ammopack (52 mm tape), 30k/box

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Power dissipation l = 4 mm, TL = 25 °C PV 500 mW
Z-current IZ PV/VZ mA
Junction temperature Tj 175 °C
Storage temperature range Tstg - 65 to + 175 °C

Maximum Thermal Resistance

Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Junction ambient l = 4 mm, TL = constant RthJA 300 K/W

Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 200 mA VF 1.5 V

Document Number 85604 www.vishay.com

Rev. 2, 12-Juni-03 1
BZX55..Series VISHAY
Vishay Semiconductors

Electrical Characteristics
BZX55C..
Partnumber Zener Voltage Dynamic Test Temperature Test Reverse Leakage Current
Range1) Resistance Current Coefficient Current
VZ @ IZT rzjT @ rzjK @ IZT TKVZ IZK IR @ IR @ @ VR
IZT, IZK, Tamb = Tamb =
f = 1 kHz f = 1 kHz 25 °C 150 °C
V Ω mA %/K mA µA V
min max min max
BZX55C2V4 2.28 2.56 < 85 < 600 5 -0.09 -0.06 1 < 50 < 100 1
BZX55C2V7 2.5 2.9 < 85 < 600 5 -0.09 -0.06 1 < 10 < 50 1
BZX55C3V0 2.8 3.2 < 85 < 600 5 -0.08 -0.05 1 <4 < 40 1
BZX55C3V3 3.1 3.5 < 85 < 600 5 -0.08 -0.05 1 <2 < 40 1
BZX55C3V6 3.4 3.8 < 85 < 600 5 -0.08 -0.05 1 <2 < 40 1
BZX55C3V9 3.7 4.1 < 85 < 600 5 -0.08 -0.05 1 <2 < 40 1
BZX55C4V3 4 4.6 < 75 < 600 5 -0.06 -0.03 1 <1 < 20 1
BZX55C4V7 4.4 5 < 60 < 600 5 -0.05 0.02 1 < 0.5 < 10 1
BZX55C5V1 4.8 5.4 < 35 < 550 5 -0.02 0.02 1 < 0.1 <2 1
BZX55C5V6 5.2 6 <25 < 450 5 -0.05 0.05 1 < 0.1 <2 1
BZX55C6V2 5.8 6.6 < 10 < 200 5 0.03 0.06 1 < 0.1 <2 2
BZX55C6V8 6.4 7.2 <8 < 150 5 0.03 0.07 1 < 0.1 <2 3
BZX55C7V5 7 7.9 <7 < 50 5 0.03 0.07 1 < 0.1 <2 5
BZX55C8V2 7.7 8.7 <7 < 50 5 0.03 0.08 1 < 0.1 <2 6.2
BZX55C9V1 8.5 9.6 < 10 < 50 5 0.03 0.09 1 < 0.1 <2 6.8
BZX55C10 9.4 10.6 < 15 < 70 5 0.03 0.1 1 < 0.1 <2 7.5
BZX55C11 10.4 11.6 < 20 < 70 5 0.03 0.11 1 < 0.1 <2 8.2
BZX55C12 11.4 12.7 < 20 < 90 5 0.03 0.11 1 < 0.1 <2 9.1
BZX55C13 12.4 14.1 < 26 < 110 5 0.03 0.11 1 < 0.1 <2 10
BZX55C15 13.8 15.6 < 30 < 110 5 0.03 0.11 1 < 0.1 <2 11
BZX55C16 15.3 17.1 < 40 < 170 5 0.03 0.11 1 < 0.1 <2 12
BZX55C18 16.8 19.1 < 50 < 170 5 0.03 0.11 1 < 0.1 <2 13
BZX55C20 18.8 21.2 < 55 < 220 5 0.03 0.11 1 < 0.1 <2 15
BZX55C22 20.8 23.3 < 55 < 220 5 0.04 0.12 1 < 0.1 <2 16
BZX55C24 22.8 25.6 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 18
BZX55C27 25.1 28.9 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 20
BZX55C30 28 32 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 22
BZX55C33 31 35 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 24
BZX55C36 34 38 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 27
BZX55C39 37 41 < 90 < 500 2.5 0.04 0.12 0.5 < 0.1 <5 30
BZX55C43 40 46 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 <5 33
BZX55C47 44 50 < 110 < 700 2.5 0.04 0.12 0.5 < 0.1 <5 36
BZX55C51 48 54 < 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39
BZX55C56 52 60 < 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43
BZX55C62 58 66 < 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47
BZX55C68 64 72 < 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51
BZX55C75 70 79 < 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56
1)Tighter tolerances available on request:
BZX55A... ± 1% of VZnom, BZX55F... ± 3% of VZnom

www.vishay.com Document Number 85604

2 Rev. 2, 12-Juni-03
VISHAY
BZX55..Series
Vishay Semiconductors

Electrical Characteristics
BZX55B..
Partnumber Zener Voltage Dynamic Test Temperature Test Reverse Leakage Current
Range1) Resistance Current Coefficient Current
VZ @ IZT rzjT @ rzjK @ IZT TKVZ IZK IR @ IR @ @ VR
IZT, IZK, Tamb = Tamb =
f = 1 kHz f = 1 kHz 25 °C 150 °C
V Ω mA %/K mA µA V
min max min max
BZX55B2V7 2.64 2.76 < 85 < 600 5 -0.09 -0.06 1 < 10 < 50 1
BZX55B3V0 2.94 3.06 < 90 < 600 5 -0.08 -0.05 1 <4 < 40 1
BZX55B3V3 3.24 3.36 < 90 < 600 5 -0.08 -0.05 1 <2 < 40 1
BZX55B3V6 3.52 3.68 < 90 < 600 5 -0.08 -0.05 1 <2 < 40 1
BZX55B3V9 3.82 3.98 < 90 < 600 5 -0.08 -0.05 1 <2 < 40 1
BZX55B4V3 4.22 4.38 < 90 < 600 5 -0.06 -0.03 1 <1 < 20 1
BZX55B4V7 4.6 4.8 < 80 < 600 5 -0.05 0.02 1 < 0.5 < 10 1
BZX55B5V1 5 5.2 < 60 < 550 5 -0.02 0.02 1 < 0.1 <2 1
BZX55B5V6 5.48 5.72 < 40 < 450 5 -0.05 0.05 1 < 0.1 <2 1
BZX55B6V2 6.08 6.32 < 10 < 200 5 0.03 0.06 1 < 0.1 <2 2
BZX55B6V8 6.66 6.94 <8 < 150 5 0.03 0.07 1 < 0.1 <2 3
BZX55B7V5 7.35 7.65 <7 < 50 5 0.03 0.07 1 < 0.1 <2 5
BZX55B8V2 8.04 8.36 <7 < 50 5 0.03 0.08 1 < 0.1 <2 6.2
BZX55B9V1 8.92 9.28 < 10 < 50 5 0.03 0.09. 1 < 0.1 <2 6.8
BZX55B10 9.8 10.2 < 15 < 70 5 0.03 0.1 1 < 0.1 <2 7.5
BZX55B11 10.78 11.22 < 20 < 70 5 0.03 0.11 1 < 0.1 <2 8.2
BZX55B12 11.76 12.24 < 20 < 90 5 0.03 0.11 1 < 0.1 <2 9.1
BZX55B13 12.74 13.26 < 26 < 110 5 0.03 0.11 1 < 0.1 <2 10
BZX55B15 14.7 15.3 < 30 < 110 5 0.03 0.11 1 < 0.1 <2 11
BZX55B16 15.7 16.3 < 40 < 170 5 0.03 0.11 1 < 0.1 <2 12
BZX55B18 17.64 18.36 < 50 < 170 5 0.03 0.11 1 < 0.1 <2 13
BZX55B20 19.6 20.4 < 55 < 220 5 0.03 0.11 1 < 0.1 <2 15
BZX55B22 21.55 22.45 < 55 < 220 5 0.04 0.12 1 < 0.1 <2 16
BZX55B24 23.5 24.5 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 18
BZX55B27 26.4 27.6 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 20
BZX55B30 29.4 30.6 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 22
BZX55B33 32.4 33.6 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 24
BZX55B36 35.3 36.7 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 27
BZX55B39 38.2 39.8 < 90 < 500 2.5 0.04 0.12 0.5 < 0.1 <5 30
BZX55B43 42.1 43.9 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 <5 33
BZX55B47 46.1 47.9 < 110 < 700 2.5 0.04 0.12 0.5 < 0.1 <5 36
BZX55B51 50 52 < 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39
BZX55B56 54.9 57.1 < 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43
BZX55B62 60.8 63.2 < 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47
BZX55B68 66.6 69.4 < 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51
BZX55B75 73 76.5 < 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56
1)Tighter tolerances available on request:
BZX55A... ± 1% of VZnom, BZX55F... ± 3% of VZnom

Document Number 85604 www.vishay.com

Rev. 2, 12-Juni-03 3
BZX55..Series VISHAY
Vishay Semiconductors

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

RthJA –Therm.Resist.Junction/ Ambient ( K/W)

500 1.3
V Ztn=V Zt/V Z(25°C)

VZtn – RelativeVoltageChange
400 1.2
TK VZ =10 x 10–4/K
8 x 10–4/K
6 x 10–4/K
300 1.1
4 x 10–4/K
l l 2 x 10–4/K

200 1.0 0
–2 x 10–4/K
–4 x 10–4/K
100 0.9
TL=constant
0 0.8
0 5 10 15 20 –60 0 60 120 180 240
95 9611 l – Lead Length ( mm ) 95 9599 Tj – Junction Temperature (°C )

Figure 1. Thermal Resistance vs. Lead Length Figure 4. Typical Change of Working Voltage vs. Junction
Temperature
TK VZ –Temperature Coefficient of VZ ( 10–4 /K)

600 15
Ptot –Total Power Dissipation ( mW)

500
10
400

300 5

200 I Z=5mA
0
100

0 –5
0 40 80 120 160 200 0 10 20 30 40 50
95 9602 Tamb – Ambient Temperature(°C ) 95 9600 V Z – Z-Voltage ( V )

Figure 2. Total Power Dissipation vs. Ambient Temperature Figure 5. Temperature Coefficient of Vz vs. Z-Voltage

1000 200
CD – Diode Capacitance ( pF )
VZ –VoltageChange( mV )

Tj =25°C 150
100 V R=2V
Tj =25°C
100
I Z=5mA
10
50

1 0
0 5 10 15 20 25 0 5 10 15 20 25
95 9598 V Z – Z-Voltage ( V ) 95 9601 V Z – Z-Voltage ( V )

Figure 3. Typical Change of Working Voltage under Operating Figure 6. Diode Capacitance vs. Z-Voltage
Conditions at Tamb=25°C

www.vishay.com Document Number 85604

4 Rev. 2, 12-Juni-03
VISHAY
BZX55..Series
Vishay Semiconductors

100 50
I F – Forward Current ( mA)

Ptot=500mW
10 40
Tamb=25°C

IZ – Z-Current ( mA)
Tj =25°C
1 30

0.1 20

0.01 10

0.001 0
0 0.2 0.4 0.6 0.8 1.0 15 20 25 30 35
95 9605 V F – Forward Voltage ( V ) 95 9607 V Z – Z-Voltage ( V )

Figure 7. Forward Current vs. Forward Voltage Figure 9. Z-Current vs. Z-Voltage

100 1000

80 r Z – Differential Z-Resistance ( Ω )
I Z=1mA
IZ – Z-Current ( mA)

Ptot=500mW
Tamb=25°C 100
60

5mA
40
10 10mA

20

Tj =25°C
0 1
0 4 8 12 16 20 0 5 10 15 20 25
95 9604 V Z – Z-Voltage ( V ) 95 9606 V Z – Z-Voltage ( V )

Figure 8. Z-Current vs. Z-Voltage Figure 10. Differential Z-Resistance vs. Z-Voltage
Zthp –ThermalResistancefor PulseCond.(K/W)

1000

tp/T=0.5
100
tp/T=0.2
Single Pulse
RthJA=300K/W
T=Tjmax–Tamb
10 tp/T=0.01
tp/T=0.1 tp/T=0.02
tp/T=0.05 i ZM =(–VZ+(V Z2+4rzj x T/Zthp)1/2)/(2rzj)

1
10–1 100 101 102
95 9603 tp – Pulse Length ( ms )

Figure 11. Thermal Response

Document Number 85604 www.vishay.com

Rev. 2, 12-Juni-03 5
BZX55..Series VISHAY
Vishay Semiconductors

Package Dimensions in mm
Cathode Identification

∅0.55 max.
technical drawings
according to DIN
specifications

∅1.7 max.
94 9366

Standard Glass Case

54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3g 26 min. 3.9 max. 26 min.

www.vishay.com Document Number 85604

6 Rev. 2, 12-Juni-03
VISHAY
BZX55..Series
Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 85604 www.vishay.com

Rev. 2, 12-Juni-03 7